US20160276140A1 - Ground state hydrogen radical sources for chemical vapor deposition of silicon-carbon-containing films - Google Patents
Ground state hydrogen radical sources for chemical vapor deposition of silicon-carbon-containing films Download PDFInfo
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- US20160276140A1 US20160276140A1 US15/169,530 US201615169530A US2016276140A1 US 20160276140 A1 US20160276140 A1 US 20160276140A1 US 201615169530 A US201615169530 A US 201615169530A US 2016276140 A1 US2016276140 A1 US 2016276140A1
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- gas
- reactant
- radicals
- hydrogen radicals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/327—Arrangements for generating the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3322—Problems associated with coating
- H01J2237/3326—Problems associated with coating high speed
Definitions
- Silicon carbide films are often used as barrier layers in semiconductor substrate processing operations. As such, the silicon carbide film often must have a high density (e.g., more than about 2 g/cc), must be hermetic, and must have a low porosity to prevent diffusion of undesirable material through the barrier layer (e.g., metal atoms or air) or to prevent undesirable etching of the barrier layer.
- a high density e.g., more than about 2 g/cc
- the barrier layer e.g., metal atoms or air
- generating a remote hydrogen plasma may improve silicon carbide film properties.
- wall collisions and other quenching events are expected to reduce the yield of active species generated by a remote plasma.
- the film deposition rate for a remote hydrogen plasma process is expected to be unacceptably low. Because silicon carbide film density is believed to vary inversely with process pressure, increases in process pressure intended to increase deposition rate may adversely lower film density, leading to unacceptable barrier performance properties.
- FIG. 1 is a schematic cross-section of a substrate processing module according to a first embodiment
- FIG. 2 is a schematic cross-section of a portion of a substrate processing module according to a second embodiment
- FIG. 3 is a schematic plan view of a substrate processing platform including four substrate processing modules arranged around a substrate transport module.
- Thin silicon-carbon-containing films e.g., silicon carbides (SiC x ), silicon-carbon-nitrides (SiN x C y ), silicon-carbon-oxides (SiC x O y ), and silicon-carbon-oxynitrides (SiC x O y N z ) are frequently used as barrier materials in integrated semiconductor manufacturing processes.
- silicon-carbon-containing films may be employed as metal diffusion barriers, etch stop layers, hard mask layers, or gate spacers for source and drain implants, as encapsulation barriers for magnetoresistive random-access memory (MRAM) or resistive random-access memory (RRAM), or as hermetic diffusion barriers at air gaps.
- MRAM magnetoresistive random-access memory
- RRAM resistive random-access memory
- PECVD plasma-enhanced chemical vapor deposition
- FIG. 1 is a schematic view of an embodiment of a substrate processing module 100 .
- substrate processing module 100 includes a radicals generation chamber 102 separated from a substrate processing chamber 104 , but fluidly coupled therewith via a multiport gas distributor 106 .
- Hydrogen radicals are generated in a radicals generation chamber 102 and supplied to a chemical vapor deposition zone 108 within substrate processing chamber 104 .
- An organosilicon reactant supplied concurrently to chemical vapor deposition zone 108 reacts with the hydrogen radicals to deposit a thin film of a silicon-carbon-containing film 110 on a surface of substrate 112 (e.g., a semiconductor device substrate or wafer) facing an interior of substrate processing chamber 104 .
- substrate 112 e.g., a semiconductor device substrate or wafer
- Substrate 112 is supported on a pedestal 114 .
- Pedestal 114 may move within substrate processing chamber 104 to position substrate 112 within chemical vapor deposition zone 108 .
- pedestal 114 is shown having elevated substrate 112 from a load position by substrate entry port 116 to a deposition position within chemical vapor deposition zone 108 .
- Pedestal 114 may also adjust the temperature of substrate 112 in some embodiments, potentially providing some selective control over thermally activated surface reactions on substrate 112 .
- FIG. 1 shows a coil 118 arranged around a radicals generation chamber outer wall 120 (e.g., a quartz dome) of radicals generation chamber 102 .
- Coil 118 is electrically coupled with a plasma generator controller 122 , both of which are used to form and sustain plasma region 124 via inductively coupled plasma generation within radicals generation chamber 102 .
- plasma generator controller 122 may supply power in a range of between about 1 and 6 Kilowatts (kW) during plasma generation with an inductively coupled plasma.
- electrodes or antennae for parallel plate or capacitively coupled plasma generation may be used to generate a continuous supply of excited hydrogen radicals via plasma excitation.
- hydrogen radicals are continuously generated using plasma excitation during film deposition.
- hydrogen radicals are generated under approximately steady-state conditions during steady-state film deposition, though transients may occur at the beginning and end of film deposition and/or at the beginning and end of an interval when the organosilicon reactant is concurrently supplied to substrate processing chamber 104 .
- excited hydrogen radicals have an energetic lifetime of about 1 ⁇ 10 ⁇ 3 seconds or less. If not re-excited or re-supplied with energy, the excited hydrogen radicals lose their energy, or relax, by emitting light or heat or by quenching through interaction with another molecule or surface. For example, excited atomic hydrogen radicals (.H*) may relax to form relaxed atomic hydrogen radicals (.H), that is, ground state atomic hydrogen.
- the excited hydrogen radicals are likely to include more excited molecular hydrogen radicals (.H 2 *) than excited atomic hydrogen radicals, as less energy is needed to form .H 2 * than is needed to dissociate hydrogen gas to form .H*.
- Excited molecular hydrogen radicals may be unselective, when compared to atomic hydrogen radicals, at breaking the bonds within the organosilicon reactant, potentially forming low-density films.
- diluted hydrogen gas mixtures may be more likely to form excited atomic hydrogen radicals.
- an excited helium (He) radical (.He*) or a ground state helium radical (.He) may break up hydrogen gas to form atomic hydrogen radicals.
- one or more additional gases may be supplied to radicals generation chamber 102 along with hydrogen gas during radicals generation.
- additional gases include helium, neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), and nitrogen (N 2 ).
- Supplying one or more additional gases may support or stabilize steady-state plasma conditions within radicals generation chamber 102 or aid in transient plasma ignition or extinction processes (i.e., striking or quenching the plasma before and after processing substrate 112 ).
- diluting hydrogen gas with helium may permit higher total pressures within radicals generation chamber 102 without concomitant plasma breakdown.
- a dilute hydrogen gas mixture of hydrogen in helium may permit higher total gas pressure without increasing plasma power to radicals generation chamber 102 . In some process settings, this may speed film deposition without decreasing film density.
- FIG. 1 depicts a hydrogen gas source 126 and a helium gas source 128 fluidly coupled to radicals generation chamber 102 to supply hydrogen and helium gases during process.
- hydrogen or helium gas, or a mixture thereof may be continuously supplied, typically at a steady-state flow rate, in a flow rate range of between about 2 and 40 standard liters per minute (slm); or preferably, in a flow rate range of between about 5 and 25 slm; or more preferably in a flow rate range of between about 10 and 20 slm.
- a mixture of hydrogen and helium within radicals generation chamber 102 may include a steady-state concentration of between about 1 and 99 volume percent (vol %) hydrogen gas in helium.
- a mixture of hydrogen and helium may include a steady-state concentration of between about 1 and 17 vol % hydrogen gas in helium, or more preferably, between about 1 and 10 vol % hydrogen gas in helium, or even more preferably, between about 2 and 5 vol % hydrogen gas in helium.
- FIG. 1 depicts separate inlets for introducing hydrogen and helium gases
- a mixture of hydrogen and one or more additional gases may be introduced directly into radicals generation chamber 102 . That is, a pre-mixed dilute hydrogen mixture may be supplied to radicals generation chamber 102 .
- Gases including excited hydrogen and helium radicals and relaxed gases, flow out of radicals generation chamber 102 into substrate processing chamber 104 along a gas flow path 130 via multiport gas distributor 106 .
- Gases within multiport gas distributor 106 are not subject to continued plasma excitation therein.
- multiport gas distributor 106 may act as an opposite pole (e.g., a ground electrode) to terminate plasma region 124 , so that it is contained entirely within radicals generation chamber 102 .
- multiport gas distributor 106 may include an ion filter or a photon filter (e.g., for filtering one or more wavelengths of light, such as ultraviolet (UV) light) or both of them before introducing the excited hydrogen radicals into the radicals relaxation zone. Filtering ions and photons may prevent substrate damage (e.g., via ion bombardment), undesirable re-excitation of molecules (e.g., via UV excitation), and/or non-selective breakdown or decomposition of the organosilicon reactant within substrate processing chamber 104 .
- multiport gas distributor 106 is shown equipped with a filter 132 .
- Multiport gas distributor 106 has a grouping of mutually spaced apart gas ports 134 to diffuse and spread the flow of gases into substrate processing chamber 104 .
- grouping is shown as an array of regularly spaced apart channels or through-holes passing through a barrier plate 136 separating radicals generation chamber 102 from substrate processing chamber 104 .
- Gas ports 134 may pass straight through multiport gas distributor 106 , as shown in FIG. 1 , or may include one or more bends.
- multiport gas distributor 106 may have 300 or more gas ports 134 to smoothly disperse and diffuse gases exiting radicals generation chamber 102 into substrate processing chamber 104 .
- radical extinction and recombination may reduce active species concentration dramatically.
- dimensions for gas ports 134 may be configured in view of the mean free path or gas flow residence time under typical processing conditions to aid the free passage of radicals into substrate processing chamber 104 .
- openings for gas ports 134 in multiport gas distributor 106 may occupy in a range of about 5-20% of the exposed surface area of multiport gas distributor 106 . That is, about 5-20% of multiport gas distributor 106 may be open space through which gases may flow from radicals generation chamber 102 into substrate processing chamber 104 .
- gas ports 134 may have an axial length to diameter ratio of between about 3:1 and 10:1, and preferably between about 6:1 and 8:1. Gas port aspect ratios in this range may reduce wall-collision frequency for all hydrogen radicals passing through gas ports 134 while providing sufficient time for a majority of the excited state hydrogen radicals to relax to ground state hydrogen radicals.
- gas ports 134 may be sized so that the residence time of gases passing through multiport gas distributor 106 is greater than the typical energetic relaxation time of an excited hydrogen radical.
- gas ports 134 may be sized so that the residence time of excited hydrogen radicals passing through multiport gas distributor 106 is greater than at least about 1 ⁇ 10 ⁇ 3 seconds.
- While the overall concentration of active species may be greater if some excited radicals survive the passage through multiport gas distributor 106 and into substrate processing chamber 104 , the contact between excited radicals and the organosilicon reactant within substrate processing chamber 104 may lead to undesirable processing.
- gas phase reactions between excited radicals and the organosilicon reactant may cause non-selective decomposition of the organosilicon reactant, potentially altering the composition or other physical or electrical characteristics (e.g., film density, film sheet resistance, film hermeticity, and film etch resistance, among others) of the film.
- Other gas phase interactions between excited radicals and the organosilicon reactant may decorate substrate 112 with small particles, potentially leading to patterning defects during subsequent substrate process events.
- process gases exiting gas ports 134 follow gas flow path 130 into a radicals relaxation zone 138 contained entirely within the interior of substrate processing chamber 104 upstream of chemical vapor deposition zone 108 .
- Substantially all of the excited hydrogen radicals flowing into radicals relaxation zone 138 transition into relaxed hydrogen radicals.
- almost all of the excited hydrogen radicals entering radicals relaxation zone 138 within an acceptable tolerance, become de-excited, or transition into a relaxed or ground state, prior to exiting radicals relaxation zone 138 .
- An acceptable tolerance within the scope of this disclosure may encompass a concentration of excited hydrogen radicals resulting from a residence time of hydrogen gas within radicals relaxation zone 138 of at least 1 ⁇ 10 ⁇ 3 seconds, and preferably of between 1 ⁇ 10 ⁇ 3 seconds and 1 ⁇ 10 ⁇ 1 seconds. Because residence time may be difficult to measure, the residence time of hydrogen gas within radicals relaxation zone 138 in practice is determined by any commercial computational fluid dynamics software using a model of the actual system with a suitable mesh size (e.g., a finite element analysis simulator and solver like that sold under the trade name COMSOL MULTIPHYSICS® by Comsol, Inc. of Burlington, Mass.).
- a finite element analysis simulator and solver like that sold under the trade name COMSOL MULTIPHYSICS® by Comsol, Inc. of Burlington, Mass.
- process conditions e.g., pressure and gas flow rates
- the geometry of radicals relaxation zone 138 may be set so that the residence time of gas flowing through radicals relaxation zone 138 may be at least about 1 ⁇ 10 ⁇ 3 seconds.
- process conditions or the geometry of radicals relaxation zone 138 may be set so that the residence time of hydrogen gas flowing through radicals relaxation zone 138 is less than a relaxation time (e.g., a time determined by the mean free path and the mean molecular velocity) resulting from radical-quenching intermolecular collisions within radicals relaxation zone 138 , so that ground state hydrogen radicals are still present in gases flowing out of radicals relaxation zone 138 upstream, in flow path 130 , of chemical vapor deposition zone 108 .
- a relaxation time e.g., a time determined by the mean free path and the mean molecular velocity
- a flow of organosilicon reactant from organosilicon reactant source 140 is introduced into chemical vapor deposition zone 108 .
- the organosilicon reactant may be supplied in a flow rate range of between about 0.5 and 25 standard cubic centimeters per minute (sccm).
- the organosilicon reactant may be supplied in a flow rate range of between about 1 and 10 sccm, and more preferably, at a rate of between about 1 and 5 sccm.
- organosilicon reactant is introduced via an organosilicon reactant distributor 142 located at an organosilicon reactant injection location 144 downstream in flow path 130 from radicals relaxation zone 138 .
- Radicals relaxation zone 138 is entirely contained in a space formed between multiport gas distributor 106 and organosilicon reactant distributor 142 .
- organosilicon reactant distributor 142 includes mutually spaced apart reactant openings positioned so that the flow of the organosilicon reactant is introduced to gas flow path 130 in a direction parallel with flow of the gas mixture through substrate processing chamber 104 .
- FIG. 2 shows another embodiment of an organosilicon reactant distributor 200 .
- the reference numbers having the same digits as FIG. 1 identify analogous structures.
- reference number 138 ′ in FIG. 2 identifies a radicals relaxation zone analogous to radicals relaxation zone 138 in FIG. 1 .
- mutually spaced apart reactant openings 202 are arranged at the walls of substrate processing chamber 104 ′ so that the flow of the organosilicon reactant is introduced to gas flow path 130 ′ in a direction intersecting the flow of the gas mixture through substrate processing chamber 104 ′ at a location downstream of the radicals relaxation zone 138 ′.
- chemical vapor deposition zone 108 ′ is formed within the interior of substrate processing chamber 104 ′ between multiport gas distributor 106 ′ and substrate 112 , and is spaced apart from multiport gas distributor 106 ′ by radicals relaxation zone 138 ′. In turn, substantially all of the flow of the organosilicon reactant is prevented from mixing with the excited gases adjacent to multiport gas distributor 106 ′, where the concentration of excited hydrogen radicals may be higher than elsewhere within substrate processing chamber 104 ′.
- organosilicon reactant injection location 144 , 144 ′ may be adjacent to a region or location in flow path 130 , 130 ′ where relaxed hydrogen radicals co-mingle or mix with the organosilicon reactant.
- a mixing location “M” marks a region where relaxed hydrogen radicals mix with organosilicon reactant. It is expected that, through dilution or reaction or both, the concentration of organosilicon reactant at the mixing location will exceed the concentration of organosilicon reactant at locations upstream of the mixing location in flow path 130 . It is also expected that the concentration of relaxed hydrogen radicals will exceed the concentration of organosilicon reactant at locations upstream of the mixing location in flow path 130 .
- the mixing location represents a conceptual boundary between radicals relaxation zone 138 and the energetic relaxations occurring therein and chemical vapor deposition zone 108 and the reactive processes occurring therein.
- shape and thickness of the boundary may vary according to the local fluid flow profile (e.g., plug flow, parabolic flow, or profiles therebetween) and local fluid diffusion profile. Because flow and diffusion profiles may be difficult to measure, one or both may be simulated in practice using any commercial computational fluid dynamics software using a model of the actual system.
- organosilicon reactant injection location 144 may be separated from multiport gas distributor 106 by a sufficient distance to prevent via back diffusion or back streaming of the organosilicon reactant along flow path 130 .
- organosilicon reactant injection location 144 may be separated from gas ports 134 in multiport gas distributor 106 by a distance along the direction of flow path 130 of between about 0.5 and 5 inches, preferably by a distance of between about 1.5 and 4.5 inches, and more preferably by a distance of between about 1.5 and 3 inches.
- organosilicon reactant injection location 144 may be positioned relative to multiport gas distributor 106 so that a mass fraction of the organosilicon reactant present at a location adjacent to gas ports 134 is about 0.1 or less.
- organosilicon reactant injection location 144 may be separated from multiport gas distributor 106 so that a mass fraction of the organosilicon reactant is about 0.02 or less at the exit openings of gas ports 134 , or more preferably, so that a mass fraction of the organosilicon reactant is about 0.015 or less at the exit openings of gas ports 134 .
- chemical vapor deposition zone 108 represents a portion of substrate processing chamber 104 where relaxed hydrogen radicals and organosilicon reactant mix and react in the gas phase during CVD formation of silicon-carbon-containing film 110 .
- heat may be provided to substrate processing chamber 104 (e.g., by heating chemical vapor deposition zone 108 or pedestal 114 ) to adjust the film deposition rate at the surface of substrate 112 .
- the bulk temperature of substrate 112 may be maintained at a temperature of between about 200 degrees Celsius and about 400 degrees Celsius. In some embodiments, the bulk temperature may be maintained at a temperature of less than about 250 degrees Celsius.
- the composition of silicon-carbon-containing film 110 may vary according to the nature of the organosilicon reactant.
- the organosilicon reactant may include at least one Si—H bond or at least one Si—Si bond, either of which may be susceptible to a bond scission reaction with a relaxed hydrogen radical.
- organosilicon reactant is selected and supplied to provide desired composition properties, and in some cases, physical or electronic properties, in silicon-carbon-containing film 110 .
- organosilicon reactants include siloxanes, silanes, alkyl silanes, alkoxy silanes, and amino silanes, among others.
- silicon-carbon-containing films e.g., silicon carbides, silicon-carbon-oxides and silicon-carbon-oxynitrides
- silanes include silane, disilane, trisilane, and higher silanes.
- alkyl silanes include dimethylsilane, trimethylsilane, tetramethylsilane, triethylsilane, and pentamethyldisilamethane.
- Silicon-carbon-containing films also including oxygen atoms may be formed using an organosilicon reactant that includes oxygen, such as siloxanes and alkoxy silanes.
- Non-limiting examples of siloxanes include cyclotetrasiloxanes (e.g., 2,4,6,8-tetramethylcyclotetrasiloxane; octamethylcyclotetrasiloxane; and heptamethylcyclotetrasiloxane); other cyclic siloxanes; siloxanes having three-dimensional or caged structures (i.e., where silicon atoms are bridged with one another via oxygen atoms, forming a three-dimensional structure or a polyhedron) such as silsequioxane; and linear siloxanes, such as disiloxanes (e.g., pentamethyldisiloxane, tetramethyldisiloxane, and hexamethyl trisiloxane).
- cyclotetrasiloxanes e.g., 2,4,6,8-tetramethylcyclotetrasiloxane; octamethylcyclotetrasilox
- the structural configuration (that is, linear, cyclic, or caged) of the siloxane may affect film porosity properties.
- cyclic siloxanes may form microporous films having pores sized according to the cyclic ring size
- caged siloxanes may form mesoporous films.
- alkoxy silanes include methoxysilane, dimethoxysilane, trimethoxysilane, methyldimethoxysilane, diethoxymethylsilane, dimethylethoxysilane, and dimethylmethoxysilane.
- Silicon-carbon-containing films also including nitrogen atoms may be formed using an organosilicon reactant that includes nitrogen, such as amino silanes and silazanes.
- amino silanes include 2,2-bis(dimethylamino)-4,4-dimethyl-2,4-disilapentane, 2,2,4-trimethyl-4-dimethylamino-3,4-disilapentane, dimethylaminodimethylsilane, bis(dimethylamino)methylsilane, and tris(dimethylamino)silane.
- 1,1,3,3-tetramethyldisilazane is a non-limiting example of a silazane.
- one or more organosilicon reactants may be selected according to the composition desired in silicon-carbon-containing film 110 .
- a silicon-carbon-oxide may be formed by supplying a mixture of a silane and a siloxane.
- an organo silicon reactant may provide all of the heteroatoms for silicon-carbon-containing film 110 .
- dimethylaminomethylethoxysilane may provide oxygen and nitrogen atoms for a silicon-carbon-oxynitride film deposition process.
- gas outlet 148 configured to be fluidly coupled to a pump (not shown).
- gas outlet 148 may be fluidly coupled with a pressure control device (e.g., a pressure control valve) configured to throttle gas flow out of substrate processing module 100 and thereby adjust the pressure therein.
- a pressure control device e.g., a pressure control valve
- FIG. 1 also depicts a substrate module controller 150 in operative communication (e.g., electrical or pneumatic communication) with substrate processing module 100 .
- Substrate module controller 150 controls deposition and maintenance operations for substrate processing module 100 .
- substrate module controller 150 includes a processing subsystem 152 (e.g., a microprocessor) configured to execute instructions held in a data subsystem 154 (e.g., memory). For example, substrate processing recipes stored in data subsystem 154 may be executed by processing subsystem 152 to control operation of substrate processing module 100 during film deposition.
- the embodiment of substrate module controller 150 shown in FIG. 1 communicates with plasma generator controller 122 to control plasma region 124 during plasma ignition, operation, and extinction events.
- Substrate module controller 150 also communicates with pedestal 114 to provide pedestal elevation control and pedestal temperature control.
- substrate module controller 150 may also control pressure within radicals generation chamber 102 and/or substrate processing chamber 104 .
- substrate module controller 150 may operate gas flow rate controllers regulating the flow of hydrogen gas source 126 , helium gas source 128 , and organosilicon reactant source 140 into substrate processing module 100 .
- substrate processing module 100 is depicted and described in a standalone sense. In some embodiments, two or more substrate processing modules 100 may be coupled together to provide sequential or parallel processing of substrates.
- FIG. 3 schematically shows an example substrate processing platform 300 having several substrate processing modules 100 coupled together by a substrate transfer station 302 .
- Substrate transfer station 302 includes a substrate handler 304 that moves substrates into and out of individual processing modules, between them, and into and out of substrate processing platform 300 via load ports 306 .
Abstract
A thin layer of a silicon-carbon-containing film is deposited on a substrate by generating hydrogen radicals from hydrogen gas supplied to a radicals generation chamber, supplying the hydrogen radicals to a substrate processing chamber separate from the substrate processing chamber via a multiport gas distributor, and reacting the hydrogen radicals therein with an organosilicon reactant introduced into the substrate processing chamber concurrently. The hydrogen radicals are allowed to relax into a ground state in a radicals relaxation zone within the substrate processing chamber before reacting with the organosilicon reactant.
Description
- This application claims the benefit of U.S. Non-Provisional patent application Ser. No. 14/062,648, filed Oct. 24, 2013, entitled “GROUND STATE HYDROGEN RADICAL SOURCES FOR CHEMICAL VAPOR DEPOSITION OF SILICON-CARBON-CONTAINING FILMS,” which is incorporated by reference herein in its entirety and for all purposes.
- Silicon carbide films are often used as barrier layers in semiconductor substrate processing operations. As such, the silicon carbide film often must have a high density (e.g., more than about 2 g/cc), must be hermetic, and must have a low porosity to prevent diffusion of undesirable material through the barrier layer (e.g., metal atoms or air) or to prevent undesirable etching of the barrier layer.
- Some have suggested that generating a remote hydrogen plasma may improve silicon carbide film properties. However, wall collisions and other quenching events are expected to reduce the yield of active species generated by a remote plasma. In turn, the film deposition rate for a remote hydrogen plasma process is expected to be unacceptably low. Because silicon carbide film density is believed to vary inversely with process pressure, increases in process pressure intended to increase deposition rate may adversely lower film density, leading to unacceptable barrier performance properties.
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FIG. 1 is a schematic cross-section of a substrate processing module according to a first embodiment; -
FIG. 2 is a schematic cross-section of a portion of a substrate processing module according to a second embodiment; and -
FIG. 3 is a schematic plan view of a substrate processing platform including four substrate processing modules arranged around a substrate transport module. - Thin silicon-carbon-containing films (e.g., silicon carbides (SiCx), silicon-carbon-nitrides (SiNxCy), silicon-carbon-oxides (SiCxOy), and silicon-carbon-oxynitrides (SiCxOyNz)) are frequently used as barrier materials in integrated semiconductor manufacturing processes. For example, silicon-carbon-containing films may be employed as metal diffusion barriers, etch stop layers, hard mask layers, or gate spacers for source and drain implants, as encapsulation barriers for magnetoresistive random-access memory (MRAM) or resistive random-access memory (RRAM), or as hermetic diffusion barriers at air gaps. These films are formed by plasma-enhanced chemical vapor deposition (PECVD) from a reaction between an organosilicon reactant or precursor and a co-reactant. Plasma activation of reacting species may lower the activation temperature of the deposition reaction and make otherwise unstable reaction pathways accessible. However, PECVD processes may unselectively cleave precursor bonds, potentially making the electrical and physical properties of the film difficult to predict.
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FIG. 1 is a schematic view of an embodiment of asubstrate processing module 100. Generally,substrate processing module 100 includes aradicals generation chamber 102 separated from asubstrate processing chamber 104, but fluidly coupled therewith via amultiport gas distributor 106. Hydrogen radicals are generated in aradicals generation chamber 102 and supplied to a chemicalvapor deposition zone 108 withinsubstrate processing chamber 104. An organosilicon reactant supplied concurrently to chemicalvapor deposition zone 108 reacts with the hydrogen radicals to deposit a thin film of a silicon-carbon-containingfilm 110 on a surface of substrate 112 (e.g., a semiconductor device substrate or wafer) facing an interior ofsubstrate processing chamber 104. -
Substrate 112 is supported on apedestal 114.Pedestal 114 may move withinsubstrate processing chamber 104 to positionsubstrate 112 within chemicalvapor deposition zone 108. In the embodiment shown inFIG. 1 ,pedestal 114 is shown having elevatedsubstrate 112 from a load position bysubstrate entry port 116 to a deposition position within chemicalvapor deposition zone 108.Pedestal 114 may also adjust the temperature ofsubstrate 112 in some embodiments, potentially providing some selective control over thermally activated surface reactions onsubstrate 112. -
FIG. 1 shows acoil 118 arranged around a radicals generation chamber outer wall 120 (e.g., a quartz dome) ofradicals generation chamber 102.Coil 118 is electrically coupled with aplasma generator controller 122, both of which are used to form and sustainplasma region 124 via inductively coupled plasma generation withinradicals generation chamber 102. In one non-limiting example,plasma generator controller 122 may supply power in a range of between about 1 and 6 Kilowatts (kW) during plasma generation with an inductively coupled plasma. In some embodiments, electrodes or antennae for parallel plate or capacitively coupled plasma generation may be used to generate a continuous supply of excited hydrogen radicals via plasma excitation. Regardless of the mechanism used to strike and sustainplasma region 124 withinradicals generation chamber 102, hydrogen radicals are continuously generated using plasma excitation during film deposition. In some embodiments, hydrogen radicals are generated under approximately steady-state conditions during steady-state film deposition, though transients may occur at the beginning and end of film deposition and/or at the beginning and end of an interval when the organosilicon reactant is concurrently supplied tosubstrate processing chamber 104. - Given stable plasma conditions, a supply of hydrogen radicals is continuously generated within
plasma region 124 while hydrogen gas is being supplied toradicals generation chamber 102. Once formed, excited hydrogen radicals have an energetic lifetime of about 1×10−3 seconds or less. If not re-excited or re-supplied with energy, the excited hydrogen radicals lose their energy, or relax, by emitting light or heat or by quenching through interaction with another molecule or surface. For example, excited atomic hydrogen radicals (.H*) may relax to form relaxed atomic hydrogen radicals (.H), that is, ground state atomic hydrogen. - Depending on the electron temperature of the plasma formed in
plasma region 124, the excited hydrogen radicals are likely to include more excited molecular hydrogen radicals (.H2*) than excited atomic hydrogen radicals, as less energy is needed to form .H2* than is needed to dissociate hydrogen gas to form .H*. Excited molecular hydrogen radicals may be unselective, when compared to atomic hydrogen radicals, at breaking the bonds within the organosilicon reactant, potentially forming low-density films. - In contrast, diluted hydrogen gas mixtures (i.e., hydrogen gas diluted with one or more additional gases) may be more likely to form excited atomic hydrogen radicals. For example, an excited helium (He) radical (.He*) or a ground state helium radical (.He) may break up hydrogen gas to form atomic hydrogen radicals. In some embodiments, one or more additional gases may be supplied to
radicals generation chamber 102 along with hydrogen gas during radicals generation. Non-limiting examples of additional gases include helium, neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), and nitrogen (N2). - Supplying one or more additional gases may support or stabilize steady-state plasma conditions within
radicals generation chamber 102 or aid in transient plasma ignition or extinction processes (i.e., striking or quenching the plasma before and after processing substrate 112). In some embodiments, diluting hydrogen gas with helium, as described in more detail below, may permit higher total pressures withinradicals generation chamber 102 without concomitant plasma breakdown. Put another way, a dilute hydrogen gas mixture of hydrogen in helium may permit higher total gas pressure without increasing plasma power toradicals generation chamber 102. In some process settings, this may speed film deposition without decreasing film density. - The embodiment shown in
FIG. 1 depicts ahydrogen gas source 126 and ahelium gas source 128 fluidly coupled toradicals generation chamber 102 to supply hydrogen and helium gases during process. In some embodiments, hydrogen or helium gas, or a mixture thereof, may be continuously supplied, typically at a steady-state flow rate, in a flow rate range of between about 2 and 40 standard liters per minute (slm); or preferably, in a flow rate range of between about 5 and 25 slm; or more preferably in a flow rate range of between about 10 and 20 slm. In some embodiments, a mixture of hydrogen and helium withinradicals generation chamber 102 may include a steady-state concentration of between about 1 and 99 volume percent (vol %) hydrogen gas in helium. Preferably, a mixture of hydrogen and helium may include a steady-state concentration of between about 1 and 17 vol % hydrogen gas in helium, or more preferably, between about 1 and 10 vol % hydrogen gas in helium, or even more preferably, between about 2 and 5 vol % hydrogen gas in helium. While the embodiment shown inFIG. 1 depicts separate inlets for introducing hydrogen and helium gases, in some embodiments a mixture of hydrogen and one or more additional gases may be introduced directly intoradicals generation chamber 102. That is, a pre-mixed dilute hydrogen mixture may be supplied toradicals generation chamber 102. - Gases, including excited hydrogen and helium radicals and relaxed gases, flow out of
radicals generation chamber 102 intosubstrate processing chamber 104 along agas flow path 130 viamultiport gas distributor 106. Gases withinmultiport gas distributor 106 are not subject to continued plasma excitation therein. In some embodiments,multiport gas distributor 106 may act as an opposite pole (e.g., a ground electrode) to terminateplasma region 124, so that it is contained entirely withinradicals generation chamber 102. - In some embodiments,
multiport gas distributor 106 may include an ion filter or a photon filter (e.g., for filtering one or more wavelengths of light, such as ultraviolet (UV) light) or both of them before introducing the excited hydrogen radicals into the radicals relaxation zone. Filtering ions and photons may prevent substrate damage (e.g., via ion bombardment), undesirable re-excitation of molecules (e.g., via UV excitation), and/or non-selective breakdown or decomposition of the organosilicon reactant withinsubstrate processing chamber 104. InFIG. 1 ,multiport gas distributor 106 is shown equipped with afilter 132. -
Multiport gas distributor 106 has a grouping of mutually spaced apartgas ports 134 to diffuse and spread the flow of gases intosubstrate processing chamber 104. In the embodiment shown inFIG. 1 , grouping is shown as an array of regularly spaced apart channels or through-holes passing through abarrier plate 136 separatingradicals generation chamber 102 fromsubstrate processing chamber 104.Gas ports 134 may pass straight throughmultiport gas distributor 106, as shown inFIG. 1 , or may include one or more bends. In some embodiments,multiport gas distributor 106 may have 300 ormore gas ports 134 to smoothly disperse and diffuse gases exitingradicals generation chamber 102 intosubstrate processing chamber 104. - At some process conditions, such as at radical generation chamber pressures of less than about 1-1.5 Torr, the principal mode of radical extinction may result from collisions between radicals and wall surfaces. Typically, remote plasma generators are far removed from reaction vessels, often having plasma sources that are fluidly coupled to reaction vessels via slender tubes that may be 0.3 meter long or more. Consequently, radical extinction and recombination, e.g., via wall collision events, may reduce active species concentration dramatically. In contrast, in some embodiments dimensions for
gas ports 134 may be configured in view of the mean free path or gas flow residence time under typical processing conditions to aid the free passage of radicals intosubstrate processing chamber 104. In some embodiments, openings forgas ports 134 inmultiport gas distributor 106 may occupy in a range of about 5-20% of the exposed surface area ofmultiport gas distributor 106. That is, about 5-20% ofmultiport gas distributor 106 may be open space through which gases may flow fromradicals generation chamber 102 intosubstrate processing chamber 104. In some embodiments,gas ports 134 may have an axial length to diameter ratio of between about 3:1 and 10:1, and preferably between about 6:1 and 8:1. Gas port aspect ratios in this range may reduce wall-collision frequency for all hydrogen radicals passing throughgas ports 134 while providing sufficient time for a majority of the excited state hydrogen radicals to relax to ground state hydrogen radicals. In some embodiments,gas ports 134 may be sized so that the residence time of gases passing throughmultiport gas distributor 106 is greater than the typical energetic relaxation time of an excited hydrogen radical. For example,gas ports 134 may be sized so that the residence time of excited hydrogen radicals passing throughmultiport gas distributor 106 is greater than at least about 1×10−3 seconds. - While the overall concentration of active species may be greater if some excited radicals survive the passage through
multiport gas distributor 106 and intosubstrate processing chamber 104, the contact between excited radicals and the organosilicon reactant withinsubstrate processing chamber 104 may lead to undesirable processing. For example, gas phase reactions between excited radicals and the organosilicon reactant may cause non-selective decomposition of the organosilicon reactant, potentially altering the composition or other physical or electrical characteristics (e.g., film density, film sheet resistance, film hermeticity, and film etch resistance, among others) of the film. Other gas phase interactions between excited radicals and the organosilicon reactant may decoratesubstrate 112 with small particles, potentially leading to patterning defects during subsequent substrate process events. Accordingly, process gases exitinggas ports 134 followgas flow path 130 into aradicals relaxation zone 138 contained entirely within the interior ofsubstrate processing chamber 104 upstream of chemicalvapor deposition zone 108. Substantially all of the excited hydrogen radicals flowing intoradicals relaxation zone 138 transition into relaxed hydrogen radicals. Put another way, almost all of the excited hydrogen radicals enteringradicals relaxation zone 138, within an acceptable tolerance, become de-excited, or transition into a relaxed or ground state, prior to exitingradicals relaxation zone 138. An acceptable tolerance within the scope of this disclosure may encompass a concentration of excited hydrogen radicals resulting from a residence time of hydrogen gas withinradicals relaxation zone 138 of at least 1×10−3 seconds, and preferably of between 1×10−3 seconds and 1×10−1 seconds. Because residence time may be difficult to measure, the residence time of hydrogen gas withinradicals relaxation zone 138 in practice is determined by any commercial computational fluid dynamics software using a model of the actual system with a suitable mesh size (e.g., a finite element analysis simulator and solver like that sold under the trade name COMSOL MULTIPHYSICS® by Comsol, Inc. of Burlington, Mass.). - In some embodiments, process conditions (e.g., pressure and gas flow rates), and/or the geometry of
radicals relaxation zone 138 may be set so that the residence time of gas flowing throughradicals relaxation zone 138 may be at least about 1×10−3 seconds. In some embodiments, process conditions or the geometry ofradicals relaxation zone 138 may be set so that the residence time of hydrogen gas flowing throughradicals relaxation zone 138 is less than a relaxation time (e.g., a time determined by the mean free path and the mean molecular velocity) resulting from radical-quenching intermolecular collisions withinradicals relaxation zone 138, so that ground state hydrogen radicals are still present in gases flowing out ofradicals relaxation zone 138 upstream, inflow path 130, of chemicalvapor deposition zone 108. - Concurrent with the delivery of hydrogen radicals to
radicals relaxation zone 138, a flow of organosilicon reactant fromorganosilicon reactant source 140 is introduced into chemicalvapor deposition zone 108. In some embodiments, the organosilicon reactant may be supplied in a flow rate range of between about 0.5 and 25 standard cubic centimeters per minute (sccm). Preferably, the organosilicon reactant may be supplied in a flow rate range of between about 1 and 10 sccm, and more preferably, at a rate of between about 1 and 5 sccm. - The organosilicon reactant is introduced via an organosilicon reactant distributor 142 located at an organosilicon
reactant injection location 144 downstream inflow path 130 fromradicals relaxation zone 138.Radicals relaxation zone 138 is entirely contained in a space formed betweenmultiport gas distributor 106 and organosilicon reactant distributor 142. In the embodiment shown inFIG. 1 , organosilicon reactant distributor 142 includes mutually spaced apart reactant openings positioned so that the flow of the organosilicon reactant is introduced togas flow path 130 in a direction parallel with flow of the gas mixture throughsubstrate processing chamber 104. -
FIG. 2 shows another embodiment of anorganosilicon reactant distributor 200. InFIG. 2 , the reference numbers having the same digits asFIG. 1 , as annotated with an apostrophe, identify analogous structures. For example,reference number 138′ inFIG. 2 identifies a radicals relaxation zone analogous toradicals relaxation zone 138 inFIG. 1 . In the embodiment ofFIG. 2 , mutually spaced apartreactant openings 202 are arranged at the walls ofsubstrate processing chamber 104′ so that the flow of the organosilicon reactant is introduced togas flow path 130′ in a direction intersecting the flow of the gas mixture throughsubstrate processing chamber 104′ at a location downstream of theradicals relaxation zone 138′. - In the embodiment shown in
FIG. 2 , chemicalvapor deposition zone 108′ is formed within the interior ofsubstrate processing chamber 104′ betweenmultiport gas distributor 106′ andsubstrate 112, and is spaced apart frommultiport gas distributor 106′ byradicals relaxation zone 138′. In turn, substantially all of the flow of the organosilicon reactant is prevented from mixing with the excited gases adjacent tomultiport gas distributor 106′, where the concentration of excited hydrogen radicals may be higher than elsewhere withinsubstrate processing chamber 104′. - In some embodiments, organosilicon
reactant injection location flow path FIGS. 1 and 2 , a mixing location “M” marks a region where relaxed hydrogen radicals mix with organosilicon reactant. It is expected that, through dilution or reaction or both, the concentration of organosilicon reactant at the mixing location will exceed the concentration of organosilicon reactant at locations upstream of the mixing location inflow path 130. It is also expected that the concentration of relaxed hydrogen radicals will exceed the concentration of organosilicon reactant at locations upstream of the mixing location inflow path 130. Thus, the mixing location represents a conceptual boundary betweenradicals relaxation zone 138 and the energetic relaxations occurring therein and chemicalvapor deposition zone 108 and the reactive processes occurring therein. Of course, the shape and thickness of the boundary may vary according to the local fluid flow profile (e.g., plug flow, parabolic flow, or profiles therebetween) and local fluid diffusion profile. Because flow and diffusion profiles may be difficult to measure, one or both may be simulated in practice using any commercial computational fluid dynamics software using a model of the actual system. - In some embodiments, organosilicon
reactant injection location 144 may be separated frommultiport gas distributor 106 by a sufficient distance to prevent via back diffusion or back streaming of the organosilicon reactant alongflow path 130. In some embodiments, organosiliconreactant injection location 144 may be separated fromgas ports 134 inmultiport gas distributor 106 by a distance along the direction offlow path 130 of between about 0.5 and 5 inches, preferably by a distance of between about 1.5 and 4.5 inches, and more preferably by a distance of between about 1.5 and 3 inches. In some embodiments, organosiliconreactant injection location 144 may be positioned relative tomultiport gas distributor 106 so that a mass fraction of the organosilicon reactant present at a location adjacent togas ports 134 is about 0.1 or less. Because local measurement of the organosilicon mass fraction may be difficult, any commercial computational fluid dynamics software using a model of the actual system with a suitable mesh size may be used to determine the mass fraction or concentration of the organosilicon reactant at the exit openings ofgas ports 134. Preferably, organosiliconreactant injection location 144 may be separated frommultiport gas distributor 106 so that a mass fraction of the organosilicon reactant is about 0.02 or less at the exit openings ofgas ports 134, or more preferably, so that a mass fraction of the organosilicon reactant is about 0.015 or less at the exit openings ofgas ports 134. - At least some of the relaxed hydrogen radicals flowing from
radicals relaxation zone 138 into chemicalvapor deposition zone 108 react therein with some of the organosilicon reactant flowing concurrently, causing silicon-carbon-containingfilm 110 to be deposited onsubstrate 112. Thus, chemicalvapor deposition zone 108 represents a portion ofsubstrate processing chamber 104 where relaxed hydrogen radicals and organosilicon reactant mix and react in the gas phase during CVD formation of silicon-carbon-containingfilm 110. In some embodiments, heat may be provided to substrate processing chamber 104 (e.g., by heating chemicalvapor deposition zone 108 or pedestal 114) to adjust the film deposition rate at the surface ofsubstrate 112. In some embodiments, the bulk temperature ofsubstrate 112 may be maintained at a temperature of between about 200 degrees Celsius and about 400 degrees Celsius. In some embodiments, the bulk temperature may be maintained at a temperature of less than about 250 degrees Celsius. - Naturally, the composition of silicon-carbon-containing
film 110 may vary according to the nature of the organosilicon reactant. In some embodiments, the organosilicon reactant may include at least one Si—H bond or at least one Si—Si bond, either of which may be susceptible to a bond scission reaction with a relaxed hydrogen radical. - An organosilicon reactant is selected and supplied to provide desired composition properties, and in some cases, physical or electronic properties, in silicon-carbon-containing
film 110. Examples of organosilicon reactants include siloxanes, silanes, alkyl silanes, alkoxy silanes, and amino silanes, among others. For example, silicon-carbon-containing films (e.g., silicon carbides, silicon-carbon-oxides and silicon-carbon-oxynitrides) may be formed using silanes. Non-limiting examples of silanes include silane, disilane, trisilane, and higher silanes. Non-limiting examples of alkyl silanes include dimethylsilane, trimethylsilane, tetramethylsilane, triethylsilane, and pentamethyldisilamethane. - Silicon-carbon-containing films also including oxygen atoms (e.g., silicon-carbon-oxides and silicon-carbon-oxynitrides) may be formed using an organosilicon reactant that includes oxygen, such as siloxanes and alkoxy silanes. Non-limiting examples of siloxanes include cyclotetrasiloxanes (e.g., 2,4,6,8-tetramethylcyclotetrasiloxane; octamethylcyclotetrasiloxane; and heptamethylcyclotetrasiloxane); other cyclic siloxanes; siloxanes having three-dimensional or caged structures (i.e., where silicon atoms are bridged with one another via oxygen atoms, forming a three-dimensional structure or a polyhedron) such as silsequioxane; and linear siloxanes, such as disiloxanes (e.g., pentamethyldisiloxane, tetramethyldisiloxane, and hexamethyl trisiloxane). The structural configuration (that is, linear, cyclic, or caged) of the siloxane may affect film porosity properties. For example, cyclic siloxanes may form microporous films having pores sized according to the cyclic ring size, and caged siloxanes may form mesoporous films. Non-limiting examples of alkoxy silanes include methoxysilane, dimethoxysilane, trimethoxysilane, methyldimethoxysilane, diethoxymethylsilane, dimethylethoxysilane, and dimethylmethoxysilane.
- Silicon-carbon-containing films also including nitrogen atoms (e.g., silicon-carbon-nitrides and silicon-carbon-oxynitrides) may be formed using an organosilicon reactant that includes nitrogen, such as amino silanes and silazanes. Non-limiting examples of amino silanes include 2,2-bis(dimethylamino)-4,4-dimethyl-2,4-disilapentane, 2,2,4-trimethyl-4-dimethylamino-3,4-disilapentane, dimethylaminodimethylsilane, bis(dimethylamino)methylsilane, and tris(dimethylamino)silane. 1,1,3,3-tetramethyldisilazane is a non-limiting example of a silazane.
- Naturally, one or more organosilicon reactants may be selected according to the composition desired in silicon-carbon-containing
film 110. For example, a silicon-carbon-oxide may be formed by supplying a mixture of a silane and a siloxane. In some embodiments, an organo silicon reactant may provide all of the heteroatoms for silicon-carbon-containingfilm 110. For example, dimethylaminomethylethoxysilane may provide oxygen and nitrogen atoms for a silicon-carbon-oxynitride film deposition process. - The process gases are removed from
substrate processing chamber 104 via agas outlet 148 configured to be fluidly coupled to a pump (not shown). Thus, excess organosilicon reactant, hydrogen gas, and any other diluent and displacement or purge gases may be removed fromsubstrate processing chamber 104 by evacuation or displacement purging or both viagas outlet 148. In some embodiments,gas outlet 148 may be fluidly coupled with a pressure control device (e.g., a pressure control valve) configured to throttle gas flow out ofsubstrate processing module 100 and thereby adjust the pressure therein. - The embodiment shown in
FIG. 1 also depicts asubstrate module controller 150 in operative communication (e.g., electrical or pneumatic communication) withsubstrate processing module 100.Substrate module controller 150 controls deposition and maintenance operations forsubstrate processing module 100. - In the embodiment shown in
FIG. 1 ,substrate module controller 150 includes a processing subsystem 152 (e.g., a microprocessor) configured to execute instructions held in a data subsystem 154 (e.g., memory). For example, substrate processing recipes stored indata subsystem 154 may be executed by processingsubsystem 152 to control operation ofsubstrate processing module 100 during film deposition. As an example, the embodiment ofsubstrate module controller 150 shown inFIG. 1 communicates withplasma generator controller 122 to controlplasma region 124 during plasma ignition, operation, and extinction events.Substrate module controller 150 also communicates withpedestal 114 to provide pedestal elevation control and pedestal temperature control. In some embodiments,substrate module controller 150 may also control pressure withinradicals generation chamber 102 and/orsubstrate processing chamber 104. In some embodiments,substrate module controller 150 may operate gas flow rate controllers regulating the flow ofhydrogen gas source 126,helium gas source 128, andorganosilicon reactant source 140 intosubstrate processing module 100. - For ease of illustration,
substrate processing module 100 is depicted and described in a standalone sense. In some embodiments, two or moresubstrate processing modules 100 may be coupled together to provide sequential or parallel processing of substrates.FIG. 3 schematically shows an examplesubstrate processing platform 300 having severalsubstrate processing modules 100 coupled together by asubstrate transfer station 302.Substrate transfer station 302 includes asubstrate handler 304 that moves substrates into and out of individual processing modules, between them, and into and out ofsubstrate processing platform 300 viaload ports 306. - It will be obvious to those having skill in the art that many changes may be made to the details of the above-described embodiments without departing from the underlying principles of the invention. The scope of the present invention should, therefore, be determined only by the following claims.
Claims (17)
1.-20. (canceled)
21. An apparatus comprising:
a processing chamber, wherein the processing chamber includes a pedestal for supporting a substrate, wherein an interior of the processing chamber includes a chemical vapor deposition zone adjacent to the pedestal and a relaxation zone above the chemical vapor deposition zone;
a plasma chamber that is separate from the processing chamber, wherein the plasma chamber is configured to generate excited hydrogen radicals;
a gas distributor fluidly coupled with the processing chamber and the plasma chamber, wherein the gas distributor includes a plurality of through-holes configured to direct a flow of excited hydrogen radicals into the relaxation zone of the processing chamber, the plurality of through-holes configured to cause substantially all of the excited hydrogen radicals flowing into and through the relaxation zone to transition into relaxed hydrogen radicals; and
one or more reactant openings positioned below the relaxation zone, the one or more reactant openings configured to direct a flow of an organosilicon reactant into the chemical vapor deposition zone of the processing chamber.
22. The apparatus of claim 21 , wherein the plurality of through-holes are sized so that a mean residence time of the excited hydrogen radicals being directed through the through-holes is greater than about 1×10−3 seconds.
23. The apparatus of claim 21 , wherein the relaxation zone is defined entirely in a space between the one or more reactant openings and the gas distributor.
24. The apparatus of claim 23 , wherein the relaxation zone is sized so that a mean residence time of the excited hydrogen radicals flowing through the relaxation zone is greater than about 1×10−3 seconds.
25. The apparatus of claim 21 , further comprising:
a controller configured with instructions to perform the following operations:
introducing a flow of hydrogen gas into the plasma chamber;
exciting at least a portion of the hydrogen gas within the plasma chamber to dissociate the hydrogen gas and form the excited hydrogen radicals, wherein substantially all of the excited hydrogen radicals transition into relaxed hydrogen radicals without recombining when directed through the gas distributor and the relaxation zone; and
introducing a flow of the organosilicon reactant into the chemical vapor deposition zone via the one or more reactant openings, at least some of the relaxed hydrogen radicals reacting with some of the organosilicon reactant to deposit silicon-carbon-containing film on the substrate.
26. The apparatus of claim 25 , wherein introducing a flow of hydrogen gas includes introducing a gas mixture of hydrogen gas and helium gas, the gas mixture including between about 1 percent and about 17 percent hydrogen gas.
27. The apparatus of claim 21 , wherein the one or more reactant openings are configured to preferentially direct the flow of the organosilicon reactant in a direction parallel to a flow path of the excited hydrogen radicals.
28. The apparatus of claim 21 , wherein the one or more reactant openings are configured to preferentially direct the flow of the organosilicon reactant in a direction intersecting with a flow path of the excited hydrogen radicals.
29. The apparatus of claim 21 , wherein the plurality of through-holes in the gas distributor are arranged as an array of regularly spaced apart gas ports.
30. The apparatus of claim 21 , wherein the through-holes in the gas distributor have an axial length to diameter ratio in a range of about 3:1 to 10:1.
31. The apparatus of claim 21 , further comprising:
at least one of an ion filter and a photon filter positioned between the plasma chamber and the processing chamber.
32. The apparatus of claim 21 , wherein the one or more reactant openings are arranged as mutually spaced apart reactant openings configured to direct a flow of the organosilicon reactant into the chemical vapor deposition zone without mixing with excited hydrogen radicals in the relaxation zone.
33. The apparatus of claim 32 , wherein the one or more reactant openings are positioned at least a distance between about 0.5 and about 5 inches from the gas distributor.
34. The apparatus of claim 33 , wherein the one or more reactant openings are positioned at least a distance between about 1.5 and about 4.5 inches from the gas distributor.
35. The apparatus of claim 21 , wherein a mass fraction of the organosilicon reactant in a region adjacent to the gas distributor is about 0.1 or less.
36. The apparatus of claim 21 , wherein the organosilicon reactant is selected from the group consisting of siloxanes, silanes, alkyl silanes, alkoxy silanes, and amino silanes.
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5122431A (en) * | 1988-09-14 | 1992-06-16 | Fujitsu Limited | Thin film formation apparatus |
US5518572A (en) * | 1991-06-10 | 1996-05-21 | Kawasaki Steel Corporation | Plasma processing system and method |
US5567243A (en) * | 1994-06-03 | 1996-10-22 | Sony Corporation | Apparatus for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor |
US20020000202A1 (en) * | 2000-06-29 | 2002-01-03 | Katsuhisa Yuda | Remote plasma apparatus for processing sustrate with two types of gases |
US6383299B1 (en) * | 1997-05-21 | 2002-05-07 | Nec Corporation | Silicon oxide film, method of forming the silicon oxide film, and apparatus for depositing the silicon oxide film |
US20040253777A1 (en) * | 2001-08-30 | 2004-12-16 | Hidenori Miyoshi | Method and apparatus for forming film |
US20080178805A1 (en) * | 2006-12-05 | 2008-07-31 | Applied Materials, Inc. | Mid-chamber gas distribution plate, tuned plasma flow control grid and electrode |
US20100255667A1 (en) * | 2007-11-02 | 2010-10-07 | Canon Anelva Corporation | Substrate cleaning method for removing oxide film |
US20130298942A1 (en) * | 2012-05-14 | 2013-11-14 | Applied Materials, Inc. | Etch remnant removal |
Family Cites Families (75)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3811567A1 (en) * | 1988-04-07 | 1989-10-19 | Wacker Chemie Gmbh | METHOD FOR PRODUCING ORGANOPOLYSILANES |
FR2713666B1 (en) | 1993-12-15 | 1996-01-12 | Air Liquide | Method and device for depositing at low temperature a film containing silicon on a metal substrate. |
JP3411559B2 (en) | 1997-07-28 | 2003-06-03 | マサチューセッツ・インスティチュート・オブ・テクノロジー | Pyrolytic chemical vapor deposition of silicone films. |
US7354873B2 (en) | 1998-02-05 | 2008-04-08 | Asm Japan K.K. | Method for forming insulation film |
US7582575B2 (en) | 1998-02-05 | 2009-09-01 | Asm Japan K.K. | Method for forming insulation film |
US6432846B1 (en) | 1999-02-02 | 2002-08-13 | Asm Japan K.K. | Silicone polymer insulation film on semiconductor substrate and method for forming the film |
TW437017B (en) | 1998-02-05 | 2001-05-28 | Asm Japan Kk | Silicone polymer insulation film on semiconductor substrate and method for formation thereof |
US6383955B1 (en) | 1998-02-05 | 2002-05-07 | Asm Japan K.K. | Silicone polymer insulation film on semiconductor substrate and method for forming the film |
US6881683B2 (en) | 1998-02-05 | 2005-04-19 | Asm Japan K.K. | Insulation film on semiconductor substrate and method for forming same |
JP4151862B2 (en) * | 1998-02-26 | 2008-09-17 | キヤノンアネルバ株式会社 | CVD equipment |
US6262445B1 (en) | 1998-03-30 | 2001-07-17 | Texas Instruments Incorporated | SiC sidewall process |
US6395150B1 (en) | 1998-04-01 | 2002-05-28 | Novellus Systems, Inc. | Very high aspect ratio gapfill using HDP |
US6846391B1 (en) | 1998-04-01 | 2005-01-25 | Novellus Systems | Process for depositing F-doped silica glass in high aspect ratio structures |
US6159871A (en) | 1998-05-29 | 2000-12-12 | Dow Corning Corporation | Method for producing hydrogenated silicon oxycarbide films having low dielectric constant |
US20030089992A1 (en) | 1998-10-01 | 2003-05-15 | Sudha Rathi | Silicon carbide deposition for use as a barrier layer and an etch stop |
US6287643B1 (en) | 1999-09-30 | 2001-09-11 | Novellus Systems, Inc. | Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor |
US6875687B1 (en) | 1999-10-18 | 2005-04-05 | Applied Materials, Inc. | Capping layer for extreme low dielectric constant films |
US6764958B1 (en) | 2000-07-28 | 2004-07-20 | Applied Materials Inc. | Method of depositing dielectric films |
US6949450B2 (en) | 2000-12-06 | 2005-09-27 | Novellus Systems, Inc. | Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber |
US6936533B2 (en) | 2000-12-08 | 2005-08-30 | Samsung Electronics, Co., Ltd. | Method of fabricating semiconductor devices having low dielectric interlayer insulation layer |
KR100705189B1 (en) * | 2000-12-30 | 2007-04-06 | 주식회사 하이닉스반도체 | Method for forming thin film of semiconductor device |
CA2460892A1 (en) | 2001-09-18 | 2003-03-27 | Pro-Corp Holdings International Limited | Image recognition inventory management system |
US6890850B2 (en) | 2001-12-14 | 2005-05-10 | Applied Materials, Inc. | Method of depositing dielectric materials in damascene applications |
US20030194496A1 (en) | 2002-04-11 | 2003-10-16 | Applied Materials, Inc. | Methods for depositing dielectric material |
TWI289491B (en) | 2002-04-16 | 2007-11-11 | Tadatomo Suga | Reflow soldering method |
US7749563B2 (en) | 2002-10-07 | 2010-07-06 | Applied Materials, Inc. | Two-layer film for next generation damascene barrier application with good oxidation resistance |
US6991959B2 (en) | 2002-10-10 | 2006-01-31 | Asm Japan K.K. | Method of manufacturing silicon carbide film |
JP4066332B2 (en) | 2002-10-10 | 2008-03-26 | 日本エー・エス・エム株式会社 | Method for manufacturing silicon carbide film |
JP4109531B2 (en) | 2002-10-25 | 2008-07-02 | 松下電器産業株式会社 | Semiconductor device and manufacturing method thereof |
DE10250889B4 (en) | 2002-10-31 | 2006-12-07 | Advanced Micro Devices, Inc., Sunnyvale | An improved SiC barrier layer for a low-k dielectric, metallization layer and method of making the same |
US7972663B2 (en) * | 2002-12-20 | 2011-07-05 | Applied Materials, Inc. | Method and apparatus for forming a high quality low temperature silicon nitride layer |
US7365029B2 (en) * | 2002-12-20 | 2008-04-29 | Applied Materials, Inc. | Method for silicon nitride chemical vapor deposition |
US6790788B2 (en) | 2003-01-13 | 2004-09-14 | Applied Materials Inc. | Method of improving stability in low k barrier layers |
KR20050002525A (en) * | 2003-06-30 | 2005-01-07 | 주식회사 하이닉스반도체 | The method for manufacturing diffusion protecting layer in semiconductor device |
US7163896B1 (en) | 2003-12-10 | 2007-01-16 | Novellus Systems, Inc. | Biased H2 etch process in deposition-etch-deposition gap fill |
US20050230350A1 (en) * | 2004-02-26 | 2005-10-20 | Applied Materials, Inc. | In-situ dry clean chamber for front end of line fabrication |
US7622400B1 (en) | 2004-05-18 | 2009-11-24 | Novellus Systems, Inc. | Method for improving mechanical properties of low dielectric constant materials |
JP2006013190A (en) * | 2004-06-28 | 2006-01-12 | Rohm Co Ltd | Method of manufacturing semiconductor device |
US7132374B2 (en) | 2004-08-17 | 2006-11-07 | Cecilia Y. Mak | Method for depositing porous films |
KR101210859B1 (en) | 2004-08-18 | 2012-12-11 | 다우 코닝 코포레이션 | Coated substrates and methods for their preparation |
GB0423685D0 (en) | 2004-10-26 | 2004-11-24 | Dow Corning Ireland Ltd | Improved method for coating a substrate |
JP5232991B2 (en) | 2004-11-29 | 2013-07-10 | 国立大学法人東京農工大学 | Method for producing silicon nanowire and silicon nanowire |
JP2007053133A (en) | 2005-08-15 | 2007-03-01 | Toshiba Corp | Semiconductor device and manufacturing method thereof |
US8021992B2 (en) | 2005-09-01 | 2011-09-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | High aspect ratio gap fill application using high density plasma chemical vapor deposition |
WO2007099428A1 (en) | 2006-02-28 | 2007-09-07 | Stmicroelectronics (Crolles 2) Sas | Metal interconnects in a dielectric material |
US7851384B2 (en) | 2006-06-01 | 2010-12-14 | Applied Materials, Inc. | Method to mitigate impact of UV and E-beam exposure on semiconductor device film properties by use of a bilayer film |
US20080064173A1 (en) | 2006-09-08 | 2008-03-13 | United Microelectronics Corp. | Semiconductor device, cmos device and fabricating methods of the same |
US8053372B1 (en) | 2006-09-12 | 2011-11-08 | Novellus Systems, Inc. | Method of reducing plasma stabilization time in a cyclic deposition process |
JP5140290B2 (en) | 2007-03-02 | 2013-02-06 | 富士フイルム株式会社 | Insulation film |
US20090264277A1 (en) | 2007-04-17 | 2009-10-22 | Dr. Rishi Raj | Picoscale catalysts for hydrogen catalysis |
JP2009075285A (en) | 2007-09-20 | 2009-04-09 | Fujifilm Corp | Stripper for semiconductor device and stripping method |
US20090258487A1 (en) * | 2008-04-14 | 2009-10-15 | Keng-Chu Lin | Method for Improving the Reliability of Low-k Dielectric Materials |
EP2274458B1 (en) | 2008-05-07 | 2020-03-25 | The Trustees of Princeton University | Method for protecting electronic devices by means of hybrid layers |
US8168268B2 (en) | 2008-12-12 | 2012-05-01 | Ovishinsky Innovation, LLC | Thin film deposition via a spatially-coordinated and time-synchronized process |
US20100081293A1 (en) | 2008-10-01 | 2010-04-01 | Applied Materials, Inc. | Methods for forming silicon nitride based film or silicon carbon based film |
US8980382B2 (en) * | 2009-12-02 | 2015-03-17 | Applied Materials, Inc. | Oxygen-doping for non-carbon radical-component CVD films |
WO2011011532A2 (en) * | 2009-07-22 | 2011-01-27 | Applied Materials, Inc. | Hollow cathode showerhead |
US8071451B2 (en) | 2009-07-29 | 2011-12-06 | Axcelis Technologies, Inc. | Method of doping semiconductors |
US7989365B2 (en) | 2009-08-18 | 2011-08-02 | Applied Materials, Inc. | Remote plasma source seasoning |
US8247332B2 (en) | 2009-12-04 | 2012-08-21 | Novellus Systems, Inc. | Hardmask materials |
US8178443B2 (en) | 2009-12-04 | 2012-05-15 | Novellus Systems, Inc. | Hardmask materials |
KR101123829B1 (en) * | 2010-02-12 | 2012-03-20 | 국제엘렉트릭코리아 주식회사 | Substrate treating apparatus |
WO2011113177A1 (en) * | 2010-03-17 | 2011-09-22 | Applied Materials, Inc. | Method and apparatus for remote plasma source assisted silicon-containing film deposition |
US8741394B2 (en) | 2010-03-25 | 2014-06-03 | Novellus Systems, Inc. | In-situ deposition of film stacks |
US20120142172A1 (en) | 2010-03-25 | 2012-06-07 | Keith Fox | Pecvd deposition of smooth polysilicon films |
US9611544B2 (en) | 2010-04-15 | 2017-04-04 | Novellus Systems, Inc. | Plasma activated conformal dielectric film deposition |
US8524612B2 (en) | 2010-09-23 | 2013-09-03 | Novellus Systems, Inc. | Plasma-activated deposition of conformal films |
US8771807B2 (en) | 2011-05-24 | 2014-07-08 | Air Products And Chemicals, Inc. | Organoaminosilane precursors and methods for making and using same |
US20130217239A1 (en) * | 2011-09-09 | 2013-08-22 | Applied Materials, Inc. | Flowable silicon-and-carbon-containing layers for semiconductor processing |
JP2013074093A (en) | 2011-09-28 | 2013-04-22 | Renesas Electronics Corp | Reflow pretreatment device and reflow pretreatment method |
US8551891B2 (en) | 2011-10-04 | 2013-10-08 | Applied Materials, Inc. | Remote plasma burn-in |
US20130242493A1 (en) | 2012-03-13 | 2013-09-19 | Qualcomm Mems Technologies, Inc. | Low cost interposer fabricated with additive processes |
US9234276B2 (en) | 2013-05-31 | 2016-01-12 | Novellus Systems, Inc. | Method to obtain SiC class of films of desired composition and film properties |
US10211310B2 (en) | 2012-06-12 | 2019-02-19 | Novellus Systems, Inc. | Remote plasma based deposition of SiOC class of films |
US10325773B2 (en) | 2012-06-12 | 2019-06-18 | Novellus Systems, Inc. | Conformal deposition of silicon carbide films |
-
2013
- 2013-10-24 US US14/062,648 patent/US9371579B2/en active Active
-
2014
- 2014-10-23 KR KR1020140144392A patent/KR102384170B1/en active IP Right Grant
- 2014-10-23 TW TW107123391A patent/TWI703234B/en active
- 2014-10-23 TW TW103136697A patent/TWI638062B/en active
- 2014-10-24 CN CN201710307116.3A patent/CN107400877B/en active Active
- 2014-10-24 CN CN201410576747.1A patent/CN104561934B/en active Active
-
2016
- 2016-05-31 US US15/169,530 patent/US20160276140A1/en not_active Abandoned
-
2022
- 2022-02-10 KR KR1020220017600A patent/KR102499408B1/en active IP Right Grant
-
2023
- 2023-02-08 KR KR1020230016958A patent/KR20230023703A/en active Application Filing
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5122431A (en) * | 1988-09-14 | 1992-06-16 | Fujitsu Limited | Thin film formation apparatus |
US5518572A (en) * | 1991-06-10 | 1996-05-21 | Kawasaki Steel Corporation | Plasma processing system and method |
US5567243A (en) * | 1994-06-03 | 1996-10-22 | Sony Corporation | Apparatus for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor |
US6383299B1 (en) * | 1997-05-21 | 2002-05-07 | Nec Corporation | Silicon oxide film, method of forming the silicon oxide film, and apparatus for depositing the silicon oxide film |
US20020000202A1 (en) * | 2000-06-29 | 2002-01-03 | Katsuhisa Yuda | Remote plasma apparatus for processing sustrate with two types of gases |
US20040253777A1 (en) * | 2001-08-30 | 2004-12-16 | Hidenori Miyoshi | Method and apparatus for forming film |
US20080178805A1 (en) * | 2006-12-05 | 2008-07-31 | Applied Materials, Inc. | Mid-chamber gas distribution plate, tuned plasma flow control grid and electrode |
US20100255667A1 (en) * | 2007-11-02 | 2010-10-07 | Canon Anelva Corporation | Substrate cleaning method for removing oxide film |
US20130298942A1 (en) * | 2012-05-14 | 2013-11-14 | Applied Materials, Inc. | Etch remnant removal |
Cited By (27)
Publication number | Priority date | Publication date | Assignee | Title |
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US11264234B2 (en) | 2012-06-12 | 2022-03-01 | Novellus Systems, Inc. | Conformal deposition of silicon carbide films |
US11894227B2 (en) | 2012-06-12 | 2024-02-06 | Novellus Systems, Inc. | Conformal deposition of silicon carbide films |
US10211310B2 (en) | 2012-06-12 | 2019-02-19 | Novellus Systems, Inc. | Remote plasma based deposition of SiOC class of films |
US10325773B2 (en) | 2012-06-12 | 2019-06-18 | Novellus Systems, Inc. | Conformal deposition of silicon carbide films |
US10832904B2 (en) | 2012-06-12 | 2020-11-10 | Lam Research Corporation | Remote plasma based deposition of oxygen doped silicon carbide films |
US11732350B2 (en) | 2013-05-31 | 2023-08-22 | Novellus Systems, Inc. | Films of desired composition and film properties |
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US10472714B2 (en) | 2013-05-31 | 2019-11-12 | Novellus Systems, Inc. | Method to obtain SiC class of films of desired composition and film properties |
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US11680314B2 (en) | 2013-05-31 | 2023-06-20 | Novellus Systems, Inc. | Films of desired composition and film properties |
US9997405B2 (en) | 2014-09-30 | 2018-06-12 | Lam Research Corporation | Feature fill with nucleation inhibition |
US11049716B2 (en) | 2015-04-21 | 2021-06-29 | Lam Research Corporation | Gap fill using carbon-based films |
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US9837270B1 (en) | 2016-12-16 | 2017-12-05 | Lam Research Corporation | Densification of silicon carbide film using remote plasma treatment |
KR20190088069A (en) * | 2016-12-16 | 2019-07-25 | 램 리써치 코포레이션 | Densification of silicon carbide films using remote plasma treatment |
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KR102499408B1 (en) | 2023-02-10 |
CN104561934B (en) | 2017-06-06 |
TWI638062B (en) | 2018-10-11 |
CN104561934A (en) | 2015-04-29 |
US9371579B2 (en) | 2016-06-21 |
KR20220024335A (en) | 2022-03-03 |
CN107400877A (en) | 2017-11-28 |
US20150118394A1 (en) | 2015-04-30 |
TWI703234B (en) | 2020-09-01 |
TW201835371A (en) | 2018-10-01 |
KR102384170B1 (en) | 2022-04-06 |
CN107400877B (en) | 2020-06-30 |
KR20150047439A (en) | 2015-05-04 |
TW201529882A (en) | 2015-08-01 |
KR20230023703A (en) | 2023-02-17 |
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