US20160197050A1 - Manufacturing method of semiconductor device and semiconductor device - Google Patents
Manufacturing method of semiconductor device and semiconductor device Download PDFInfo
- Publication number
- US20160197050A1 US20160197050A1 US15/071,545 US201615071545A US2016197050A1 US 20160197050 A1 US20160197050 A1 US 20160197050A1 US 201615071545 A US201615071545 A US 201615071545A US 2016197050 A1 US2016197050 A1 US 2016197050A1
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- Prior art keywords
- film
- wire
- electrode pad
- semiconductor device
- pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 107
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
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- 238000012360 testing method Methods 0.000 claims description 18
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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Definitions
- the present invention relates to a manufacturing method of a semiconductor device and a semiconductor device, for example, an effective technology applied to a semiconductor device, in which wire bonding is carried out.
- wires made of gold Au
- wires made of a conductive material except for gold is used.
- a conductive film made of gold is formed on the surfaces of the electrode pads of a semiconductor chip and wires are electrically connected with the electrode pads through this conductive film.
- This conductive film is, for example, a plating film, an OPM (Over Pad Metallization) film or an UBM (Under Bump Metallization) film.
- OPM Over Pad Metallization
- UBM Under Bump Metallization
- the inventors of the present application investigated a technology capable of reducing the cost of a semiconductor device while ensuring the bonding reliability of wires.
- step (b) after the step (a), removing a natural oxide film formed on the surface of the electrode pad;
- step (c) after the step (b), forming a pad-cover film, comprised of a conductive member, over the surface of the electrode pad exposed by removing the natural oxide film.
- the method further includes:
- step (d) after the step (c), connecting a part of wire, comprised of a conductive material containing no gold, with the pad-cover film, and forming an alloy layer at the interface between the wire and the electrode pad, the crystal structure of the pad-cover film being comprised of one of a body-centered cubic lattice and a hexagonal close-packed lattice.
- a semiconductor device includes a semiconductor chip including a plurality of electrode pads formed on the main surface, a plurality of leads, and a plurality of wires, comprised of a conductive material containing no gold, electrically connecting the electrode pads with the leads, respectively, in which a plurality of pad-cover films, comprised of a conductive member, are formed on the surfaces of the plurality of electrode pads, respectively, and the plurality of wires are connected with the electrode pads such that alloy layers are formed at the interfaces with the plurality of wires and the plurality of electrode pads, respectively.
- the above plurality of pad-cover films are arranged around connecting parts of the plurality of wires in the surfaces of the plurality of electrode pads, respectively, and the crystal structure of each of the pad-cover films is comprised of one of a body-centered cubic lattice and a hexagonal close-packed lattice.
- the cost of the semiconductor device can be reduced while the bonding reliability of wire bonding in the semiconductor device is ensured.
- FIG. 1 is a sectional view showing an example of the structure of a semiconductor device (BGA) according to an embodiment of the present invention
- FIG. 2 is a partially enlarged sectional view showing an example of the structure of the wire bonding part of the semiconductor device shown in FIG. 1 ;
- FIG. 3 include a plan view and a partial sectional view showing an example of the structure of the wire bonding part shown in FIG. 2 ;
- FIG. 4 is a perspective view showing an example of the crystal structure of the first film of the semiconductor device shown in FIG. 1 ;
- FIG. 5 is a perspective view showing an example of the crystal structure of the first film of the semiconductor device shown in FIG. 1 ;
- FIG. 6 is a perspective view showing the crystal structure of the material of Comparative Example
- FIG. 7 is a flow chart showing an example of the pre-process of the assembly of the semiconductor device shown in FIG. 1 ;
- FIG. 8 is a flow chart showing an example of the post-process of the assembly of the semiconductor device shown in FIG. 1 ;
- FIG. 9 is a sectional view showing an example of the structure after the pad opening of the pre-process shown in FIG. 7 ;
- FIG. 10 is a sectional view showing an example of a natural oxide film forming state in the pre-process shown in FIG. 7 ;
- FIG. 11 is a sectional view showing an example of the structure after the probe testing of the pre-process shown in FIG. 7 ;
- FIG. 12 is a sectional view showing an example of a natural oxide film removal state in the pre-process shown in FIG. 7 ;
- FIG. 13 is a sectional view showing an example of the structure after the formation of the first film in the pre-process shown in FIG. 7 ;
- FIG. 15 is a sectional view showing an example of the structure after the removal of the first film in the pre-process shown in FIG. 7 ;
- FIG. 16 is a sectional view showing an example of a photoresist removal state in the pre-process shown in FIG. 7 ;
- FIG. 18 is a plan view showing an example of the structure after chip die bonding in the post-process shown in FIG. 8 ;
- FIG. 19 is a plan view showing an example of the structure after wire bonding in the post-process shown in FIG. 8 ;
- FIG. 20 is a plan view showing an example of the structure after molding in the post-process shown in FIG. 8 ;
- FIG. 21 is a sectional view showing an example of the structure cut along the line A-A of FIG. 20 ;
- FIG. 22 is a sectional view showing an example of the structure at the time of ball affixing and substrate dicing in the post-process shown in FIG. 8 ;
- FIG. 23 is a partially enlarged sectional view showing the structure of the wiring bonding part of Modification 1 of the embodiment.
- FIG. 24 is a partially enlarged sectional view showing the structure of the wire bonding part of Comparative Example
- FIG. 25 includes a plan view and a partial sectional view showing the structure of the wire bonding part of Modification 2 of the embodiment
- FIG. 26 includes a plan view and a partial sectional view showing the structure of the wire bonding part of Modification 2 of the embodiment
- FIG. 27 is a plan view showing the structure of the semiconductor device of Modification 7 of the embodiment.
- FIG. 28 is a sectional view showing the structure of the semiconductor device shown in FIG. 27 ;
- FIG. 29 is a sectional view showing the structure of the semiconductor device of Modification 7 of the embodiment.
- FIG. 1 is a sectional view showing an example of the structure of a semiconductor device (BGA) according to the embodiment
- FIG. 2 is a partially enlarged sectional view showing an example of the structure of the wire bonding part of the semiconductor device shown in FIG. 1
- FIG. 3 includes a plan view and a partial sectional view showing an example of the structure of the wire bonding part shown in FIG. 2 .
- the semiconductor device according to this embodiment shown in FIG. 1 is a semiconductor package in which a semiconductor chip 12 mounted over the top surface 20 a of a package substrate 20 which is a wiring board is resin-sealed with a sealing body 13 and electrically connected with the bonding leads (leads) 20 c of the package substrate 20 by wires 11 .
- a BGA (Ball Grid Array) 10 having a plurality of solder bumps (solder balls) 17 which will become external connection terminals in a grid (lattice) pattern over the under surface 20 b of the package substrate 20 is taken as an example of the above semiconductor device.
- the solder bumps 17 may be provided, for example, along the periphery of the under surface 20 b of the package substrate 20 .
- the BGA 10 has the package substrate (may also be referred to as “BGA substrate”) 20 including the top surface 20 a , the bonding leads 20 c which are connection terminals formed over the top surface 20 a , and the under surface (rear surface, mounting surface) 20 b opposite to the top surface 20 a.
- the package substrate may also be referred to as “BGA substrate”
- the bonding leads 20 c which are connection terminals formed over the top surface 20 a
- the under surface (rear surface, mounting surface) 20 b opposite to the top surface 20 a.
- the BGA 10 further has the semiconductor chip 12 mounted over the top surface 20 a of the package substrate 20 , the wires 11 electrically connecting the bonding leads 20 c of the package substrate 20 with electrode pads 12 b exposed to the main surface 12 a of the semiconductor chip 12 , respectively, and the solder bumps 17 which are external connection terminals and provided over the under surface 20 b of the package substrate 20 .
- the semiconductor chip 12 mounted over the package substrate 20 has the electrode pads 12 b which are bonding pads in such a manner that they are exposed to the main surface 12 a.
- the bonding leads 20 c are arranged around the semiconductor chip 12 , and the electrode pads 12 b exposed to the main surface 12 a of the semiconductor chip 12 and the bonding leads 20 c are electrically connected with each other by the respective wires 11 .
- the BGA 10 is a substrate type semiconductor package in which the semiconductor chip 12 is mounted over the package substrate 20 and connected with the package substrate 20 by the wires and the semiconductor chip 12 and the wires 11 are sealed with the sealing body 13 formed from a resin.
- the semiconductor chip 12 has the main surface 12 a and a rear surface 12 c which is opposite to the main surface 12 a , arranged opposed to the top surface 20 a of the package substrate 20 and fixed to the top surface 20 a of the package substrate 20 by a die bonding material 18 such as a resin paste material.
- the semiconductor chip 12 is formed from, for example, silicon, and the electrode pads 12 b are formed from a material containing aluminum (Al) as the main component. Further, the wires 11 are formed from a material containing copper (Cu) as the main component.
- the sealing resin for forming the sealing body 13 is, for example, a thermosetting epoxy resin.
- the external connection terminals of the BGA 10 are solder bumps 17 formed from a solder material such as Sn—Pb-based solder or Pb-free solder, out of which Pb-free solder is preferably used.
- the package substrate 20 is a resin substrate to which, for example, a plurality of wiring layers and a plurality of insulating layers are formed on a core material such as a glass epoxy resin.
- the bonding leads 20 c and unshown via holes and bump lands are electrically connected through the wires 11 .
- a first film (pad-cover film) 12 d composed of a conductive member is formed on the surface of the electrode pad 12 b of the semiconductor chip 12 .
- the electrode pad 12 b of the semiconductor chip 12 is formed in such a manner that it is exposed to the main surface 12 a of the semiconductor chip 12 . That is, the electrode pad 12 b is exposed to the opening 12 j of a passivation film 12 g which is an insulating film (protection film) made of, for example, SiO.
- the electrode pad 12 b is made of aluminum (Al) will be explained.
- a metal film such as a Ti/TiN/Ti film 12 i is formed below the electrode pad 12 b made of aluminum.
- the first film (pad-cover film) 12 d is formed on the surface of the electrode pad 12 b .
- This first film 12 d is comprised of a conductive member such as a chromium or tungsten member and connected with the electrode pad 12 b in such a manner that the wire 11 breaks the first film 12 d.
- a natural oxide film 12 f shown in FIG. 11 which is formed by making an opening in the passivation film 12 g when the electrode pad 12 b is formed and described hereinafter is first removed to expose the pure aluminum surface of the electrode pad 12 b , and then the first film 12 d which is stable as a pad-cover film is formed over this pure aluminum surface. Then, the first film 12 d is broken (destroyed) by the wire 11 at the time of wire bonding.
- part of the wire 11 which is a copper wire breaks the first film 12 d and contacts the pure aluminum electrode pad 12 b , thereby forming an alloy layer 12 e at the interface between the wire 11 and the electrode pad 12 b . That is, Cu of the wire 11 and Al of the electrode pad 12 b react with each other to form a Cu/Al layer as the alloy layer 12 e.
- the first film 12 d is located around the connecting part (wire bonding part 11 a ) to the electrode pad 12 b of the wire 11 over the surface of the electrode pad 12 b .
- the first film 12 d is formed over the entire surface of the electrode pad 12 b . That is, the first film 12 d is formed to cover the entire surface of the electrode pad 12 b.
- the first film 12 d is formed up to an area where it contacts the bonding surface 11 c of the wire bonding part 11 a .
- the first film 12 d enters the inner side of the wire 11 from the ball diameter 11 b.
- a plurality of probe marks 12 k are formed by probe testing and covered by the first film 12 d.
- the first film 12 d is preferably comprised of a conductive member (conductive material) and a low-resistance film. Further, it preferably has a large hardness difference from Al and Cu so that it is easily broken (easily fractured). That is, when the wire 11 is pressed by the load of wire bonding at the time of wire bonding, the first film 12 d is broken to stably bond the wire 11 to the pure Al of the electrode pad 12 b.
- the first film 12 d is preferably broken but does not always need to be broken.
- FIG. 4 is a perspective view showing an example of the crystal structure (body-centered cubic lattice) of the first film of the semiconductor device shown in FIG. 1
- FIG. 5 is a perspective view showing an example of the crystal structure (hexagonal close-packed lattice) of the first film of the semiconductor device shown in FIG. 1
- FIG. 6 is a perspective view showing the crystal structure (face-centered cubic lattice) of the material of Comparative Example.
- atoms 19 are situated at the apexes and the center of a cubic unit lattice.
- the atoms 19 are existent at the apexes of the top surface and the bottom surface of a regular hexagonal column and three atoms 19 are existent at a height 1 ⁇ 2 of the total height of the regular hexagonal column.
- the atoms 19 are situated at the apexes and the centers of the faces of a unit lattice.
- Al and Cu have a face-centered cubic lattice structure. Therefore, a crystal structure having a large hardness difference from Al and Cu so that it is easily broken is a condition required for the first film 12 d with the result that the crystal structure of the first film 12 d of this embodiment is comprised of a body-centered cubic lattice or a hexagonal close-packed lattice.
- examples of the material comprised of a body-centered cubic lattice used in the first film 12 d include lithium (Li), sodium (Na), potassium (k), vanadium (V), chromium (Cr), iron (Fe), rubidium (Rb), niobium (Nb), molybdenum (Mo), barium (Ba), tantalum (Ta), tungsten (W) and europium (Eu).
- Examples of the material comprised of a hexagonal close-packed lattice used in the first film 12 d include beryllium (Be), magnesium (Mg), scandium (Sc), titanium (Ti), titanium nitride (TiN), cobalt (Co), zinc (Zn), yttrium (Y), zirconium (Zr), technetium (Tc), ruthenium (Ru) and gadolinium (Gd).
- examples of the material comprised of a hexagonal close-packed lattice used in the first film 12 d include terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), hafnium (Hf), rhenium (Re) and osmium (Os).
- the first film (pad-cover film) 12 d is expressed by another definition, it is made of a passive metal (valve metal).
- the term “passive” means a state in which an oxide film resisting a corrosion function is formed on the surface of a metal, and the term “passive metal” means a metal which tends to become passive. That is, the passive metal is a metal which has a stable surface, is hardly oxidized and can keep bonding strength, such as chromium, titanium or tungsten.
- the material of the first film (pad-cover film) 12 d is preferably chromium, titanium or tungsten when breaking ease is taken into account and most preferably chromium from the viewpoint of corrosion resistance.
- the first film 12 d in this embodiment is most preferably a chromium film.
- FIG. 7 is a flow chart showing an example of the pre-process (method for manufacturing a semiconductor chip) of the assembly of the semiconductor device shown in FIG. 1
- FIG. 8 is a flow chart showing an example of the post-process (method for manufacturing BGA) of the assembly of the semiconductor device shown in FIG. 1
- FIGS. 9 to 16 show a method for manufacturing a semiconductor chip.
- FIG. 9 is a sectional view showing an example of the structure after pad opening in the pre-process shown in FIG. 7
- FIG. 10 is a sectional view showing an example of a natural oxide film forming state in the pre-process shown in FIG. 7
- FIG. 11 is a sectional view showing an example of the structure after probe testing in the pre-process shown in FIG. 7
- FIG. 12 is a sectional view showing an example of a natural oxide film removal state in the pre-process shown in FIG. 7 .
- FIG. 13 is a sectional view showing an example of the structure after the formation of the first film in the pre-process shown in FIG. 7
- FIG. 14 is a sectional view showing an example of a photoresist forming state in the pre-process shown in FIG. 7
- FIG. 15 is a sectional view showing an example of the structure after the removal of the first film in the pre-process shown in FIG. 7
- FIG. 16 is a sectional view showing an example of a photoresist removal state in the pre-process shown in FIG. 7 .
- FIGS. 17 to 22 show a method for manufacturing a semiconductor device (BGA).
- FIG. 17 is a plan view showing an example of the structure of a substrate used in the post-process shown in FIG. 8
- FIG. 18 is a plan view showing an example of the structure after chip die bonding in the post-process shown in FIG. 8
- FIG. 19 is a plan view showing an example of the structure after wire bonding in the post-process shown in FIG. 8
- FIG. 20 is a plan view showing an example of the structure after molding in the post-process shown in FIG. 8
- FIG. 21 is a sectional view showing an example of the structure cut along the line A-A of FIG. 20
- FIG. 22 is a sectional view showing an example of the structure at the time of ball affixing and substrate dicing in the post-process shown in FIG. 8 .
- Pad opening shown in the step S 1 of FIG. 7 is carried out.
- a semiconductor wafer having a plurality of chip areas (semiconductor chips) with a plurality of electrode pads 12 b is provided, and a passivation film 12 g which is an insulating film and a TiN layer 12 q formed over the electrode pad 12 b in each chip area in this wafer state are removed to form an opening 12 j so that the electrode pad 12 b made of a material containing Al as the main component is exposed to the opening 12 j .
- a Ti/TiN/Ti film 12 i is formed below the electrode pad 12 b .
- the passivation film 12 g is removed by, for example, sputter etching (technology for removing a material by causing gas ions having an etching function to collide with the surface of the material).
- “W testing P testing” probe testing shown in the step S 2 of FIG. 7 is carried out.
- a probe needle (not shown) is brought into contact with the electrode pad 12 b shown in FIG. 7 to carry out a conduction test.
- the above probe needle is brought into contact with an area outside the wire bonding part 11 a of the electrode pad 12 b , whereby a plurality of probe marks 12 k shown in FIG. 11 are formed.
- a natural oxide film 12 f is formed on the surface (exposed surface, wire bonding surface) of the exposed electrode pad 12 b .
- This natural oxide film 12 f is made of, for example, Al 2 O 3 .
- the natural oxide film 12 f shown in FIG. 11 formed on the surface (exposed surface, wire bonding surface) of the electrode pad 12 b is first removed, thereby exposing the Al electrode pad 12 b.
- the natural oxide film 12 f is removed in a vacuum atmosphere.
- a sputtering apparatus is used to remove (sputter etch) this natural oxide film 12 f in a vacuum atmosphere in the vacuum processing chamber (vacuum chamber) of this sputtering apparatus.
- the sputtering apparatus is used to etch the natural oxide film 12 f.
- a first film (pad-cover film) 12 d comprised of a conductive member shown in FIG. 13 is formed on the surface (exposed surface, wire bonding surface) of the electrode pad 12 b exposed by removing the natural oxide film 12 f.
- the first film 12 d should be formed without contacting air after moving into a vacuum processing chamber for film formation.
- the removal of the natural oxide film 12 f and the formation of the first film (sputtered film) are carried out continuously.
- the removal of the natural oxide film 12 f and the formation of the first film 12 d are carried out continuously so as to form the first film 12 d over the surface (exposed surface, wire bonding surface) of the electrode pad 12 b by sputtering in the same vacuum atmosphere, film formation processing can be carried out efficiently.
- the first film (pad-cover film) 12 d has a crystal structure comprised of a body-centered cubic lattice or a hexagonal close-packed lattice. Since Al (electrode pad 12 b ) and Cu (wire 11 ) are comprised of a face-centered cubic lattice, a crystal structure which has a large hardness difference from Al and Cu so that the crystal structure can be easily broken is a condition required for the first film 12 d.
- the crystal structure of the first film 12 d is comprised of a body-centered cubic lattice or a hexagonal close-packed lattice.
- the first film 12 d is made of chromium, tungsten or titanium.
- the first film 12 d is formed over the electrode pad 12 b and also the passivation film 12 g.
- a photoresist film 12 h is formed. That is, the photoresist film 12 h is formed over the first film 12 d over the area of the electrode pad 12 b.
- the first film 12 d protruding outward from above the area of the electrode pad 12 b as shown in FIG. 14 is removed by using the photoresist film 12 h as a mask.
- the sputtering apparatus is used to remove (sputter etch) the first film 12 d .
- the photoresist film 12 h is removed to expose the first film 12 d over the electrode pad 12 b as shown in FIG. 16 .
- the removal of the protruding first film 12 d shown in FIG. 15 and the removal of the photoresist film 12 h shown in FIG. 16 may be carried out by etching using an etching apparatus.
- the first film 12 d is formed over each of the electrode pads 12 b of each chip area (semiconductor chip 12 ) in the wafer.
- step S 4 of FIG. 7 backgrinding shown in the step S 4 of FIG. 7 is carried out. That is, the rear surface of the wafer is ground to reduce the thickness of the wafer to a desired value.
- step S 5 the post-process comes next. That is, the assembly of the BGA 10 of FIG. 1 which is an example of the semiconductor device comes next.
- step S 11 of FIG. 8 is first carried out. That is, the wafer having a desired thickness formed by backgrinding in the step S 5 of FIG. 7 is diced to be divided into individual semiconductor chips 12 (segmentation).
- a multipiece substrate 14 shown in FIG. 17 is provided to form the BGA 10 . That is, the multipiece substrate 14 having a plurality of device areas 14 c over the top surface 14 a is provided. The device areas 14 c are formed in a matrix, and a plurality of holes 14 d are formed in the peripheral part of the substrate. The holes 14 d are used for the positioning of the multipiece substrate 14 .
- the BGA 10 of this embodiment is a semiconductor device which is assembled by using the multipiece substrate 14 .
- a sealing step (molding step) for the assembly of this embodiment a case where resin sealing is carried out by so-called “batch molding system” in which a resin is supplied into a cavity while the semiconductor chips 12 mounted in the device areas 14 c are covered by the single cavity (not shown) will be explained.
- the above molding system is not limited to the batch molding system.
- chip die bonding shown in the step S 12 of FIG. 8 is carried out. That is, as shown in FIG. 18 , the semiconductor chips 12 are mounted in the respective device areas 14 c of the multipiece substrate 14 . Thereby, the semiconductor chips 12 are mounted over the top surface 14 a of the multipiece substrate 14 .
- the semiconductor chips 12 are fixed to the substrate by the die bonding material 18 as shown in FIG. 1 .
- the wires 11 are, for example, Cu wires.
- the wire 11 is connected with the first film 12 d over the electrode pad 12 b of the semiconductor chip 12 , and part of the wire 11 is brought into contact with the electrode pad 12 b to form the alloy layer 12 e at the interface between the wire 11 and the electrode pad 12 b.
- the first film 12 d is broken by the wire 11 , whereby the pure Al electrode pad 12 b and the Cu wire (wire 11 ) are electrically connected with each other.
- broken pieces 12 m of the first film 12 d remain around the interface between the electrode pad 12 b and the wire bonding part 11 a.
- the Al electrode pad 12 b and the wire 11 are connected with each other by breaking (destroying) the first film 12 d with the wire 11 in the wire bonding of this embodiment, thereby making it possible to form the alloy layer 12 e made of Cu and Al at the interface between the wire 11 and the electrode pad 12 b.
- the first film 12 d is preferably broken by the wire 11 but not always need to be broken, and the wire 11 and the electrode pad 12 b may not be electrically connected with each other through the first film 12 d .
- the wire 11 and the electrode pad 12 b are connected with each other through the first film 12 d , high bonding reliability can be obtained as compared with a case where the wire 11 and the electrode pad 12 b are connected with each other through an oxide film.
- Molding in this embodiment is batch molding as described above.
- a batch sealing part 16 is formed over the top surface 14 a of the multipiece substrate 14 , and as shown in FIG. 21 , the semiconductor chips 12 are sealed with the batch sealing part 16 .
- solder bumps (solder balls) 17 are formed as external connection terminals over the under surface 14 b of the multipiece substrate 14 .
- Lead-free solder is preferably used as a solder material used for the solder bumps 17 .
- lead-free solder means solder having a lead (Pb) content of 0.1 wt % or less, and this content is defined as the standard of the RoHS (Restriction of Hazardous Substances) Directive.
- “marking” shown in the step S 16 of FIG. 8 is carried out. For example, a predetermined production number or management number is marked by applying a laser beam to the top part of the batch sealing part 16 .
- substrate dicing shown in the step S 17 of FIG. 8 is carried out. That is, the batch sealing part 16 and the multipiece substrate 14 shown in FIG. 22 are diced for each device area unit by a dicing blade 15 to be divided.
- testing shown in the step S 18 of FIG. 8 is carried out. That is, a test such as an operation test is carried out on the separated BGA's 10 . Thereby, non-defective products are selected.
- step S 19 of FIG. 8 After testing, “appearance” shown in the step S 19 of FIG. 8 is carried out. That is, the appearance of the BGA 10 selected by testing is inspected, thereby completing the assembly of the BGA 10 shown in FIG. 1 .
- the first film 12 d such as a chromium film is formed on the surface of the electrode pad 12 b which is formed in the main surface 12 a of the semiconductor chip 12 and from which the natural oxide film 12 f has been removed and destroyed to bond the Cu wire (wire 11 ) to the electrode pad 12 b.
- the first film 12 d such as a chromium or tungsten film has a large hardness difference from Al and Cu so that it is easily broken.
- the bonding part between the wire 11 and the electrode pad 12 b can be stabilized.
- the cost of the BGA 10 can be reduced. That is, the cost of the BGA 10 can be reduced while the bonding reliability of wire bonding of the BGA 10 is ensured.
- FIG. 23 is a partially enlarged sectional view showing the structure of the wire bonding part of Modification 1 of the embodiment
- FIG. 24 is a partially enlarged sectional view showing the structure of the wire bonding part of Comparative Example.
- FIG. 24 shows the structure which was compared and investigated by the inventors of the present application.
- Modification 1 a measure for a semiconductor chip 12 which requires thick Al electrode pads 12 b in consideration of electric properties will be explained.
- a pad splash 12 n embssment of the electrode pad 12 b
- the pad splash 12 n tends to become large in the case of the thick electrode pad 12 b .
- the thickness of the electrode pad 12 b is reduced, the thickness of the pad below the wire bonding part 11 a becomes small. Accordingly, base damage may occur. Therefore, it is difficult to increase bonding load at the time of wire bonding.
- an intermediate film (second film) having high hardness is formed in the thickness direction of the electrode pad 12 b .
- the intermediate film 12 p does not need to be located at an intermediate position in the thickness direction of the electrode pad 12 b and may be formed on an upper layer side or a lower layer side in the thickness direction of the electrode pad 12 b.
- the intermediate film 12 p is comprised of a conductive member.
- the stiffness of the electrode pad 12 b can be strengthened.
- the pad splash 12 n can be suppressed. Further, damage to the substrate can be reduced.
- the first film 12 d is formed over the entire surface of the electrode pad 12 b as shown in FIG. 3 . As shown in FIGS. 25 and 26 , the first film 12 d may be formed only in an area where the wire 11 is to be bonded (area where the wire bonding part 11 a is to be bonded).
- FIGS. 25 and 26 are plan views and partial sectional views showing the structure of the wire bonding part of Modification 2 of the embodiment.
- the first films 12 d are ring-shaped.
- a plurality of (for example, two) the ring-shaped first films 12 d having different ring diameters are formed concentrically.
- the ring-shaped first films 12 d are not connected with each other and each divided into, for example, four.
- the separate first films 12 d , and the natural oxide films 12 f arranged around the first films 12 d are in contact with the wire bonding part 11 a , whereby the separate first films 12 d are easily broken as the number of the interfaces of the first films 12 d at the respective ends increases.
- the ring-shaped first films 12 d and the natural oxide films are divided according to a load distribution since they differ in the amount of applied load according to the distance from right below a capillary (not shown) as a bonding tool. Therefore, as compared with a case where the natural oxide film 12 f is formed, the bonding properties of the wire 11 can be enhanced.
- the first film 12 d is divided into a plurality of small squares in the plan view. Also in this case, the divided first films 12 d and the natural oxide films 12 f arranged around the first films 12 d are in contact with the wire bonding part 11 a . Like the structure shown in FIG. 25 , the divided first films 12 d are easily broken since the number of the interfaces of the first films 12 d at the respective ends increases.
- the divided first films 12 d and the natural oxide films 12 f around the first films 12 d come in contact with the wire bonding part 11 a with the result that the number of the interfaces of the first films 12 d at the ends (peripheries) increases. Thereby, the first films 12 d can be easily broken.
- the first film (pad-cover film) 12 d consists of a single layer.
- the first film 12 d may consist of a plurality of layers.
- it may have a two-layer structure consisting of an upper chromium layer and a lower copper layer, whereby the copper layer underlies the chromium layer, thereby making it possible to enhance its bonding force to the Cu wire (wire 11 ).
- the first film 12 d may consist of a mixed layer (single layer) made of chromium and copper. Further, it may be made of a compound (single layer) containing chromium.
- the electrode pad 12 b of the semiconductor chip 12 is made of a material containing aluminum as the main component and the wire 11 is made of a material containing copper as the main component.
- the main component of the electrode pad 12 b and the main component of the wire 11 may be any material other than the above materials except for gold (Au).
- they may be a combination of a wire 11 containing aluminum as the main component and an electrode pad 12 b containing aluminum as the main component, or a combination of a wire 11 containing aluminum as the main component and an electrode pad 12 b containing copper as the main component.
- they may be a combination of a wire containing silver as the main component and an electrode pad 12 b containing aluminum as the main component, a combination of a wire 11 containing silver as the main component and an electrode pad 12 b containing copper as the main component, or a combination of a wire 11 containing copper as the main component and an electrode pad 12 b containing copper as the main component.
- a combination of a wire 11 made of a material except for gold and an electrode pad 12 b made of a material except for gold may be used.
- sputter etching using a sputtering apparatus is employed to remove the natural oxide film 12 f .
- the removal of the natural oxide film 12 f may be carried out by, for example, etching using an etching apparatus.
- the first film 12 d is formed on the surface (fresh surface) of the newly exposed electrode pad 12 b by sputtering using a sputtering apparatus.
- the formation of the first film 12 d may be carried out by, for example, plating.
- the semiconductor device is the BGA 10 .
- the above semiconductor device may be a QFP (Quad Flat Package) which is assembled by using lead frames or a QFN (Quad Flat Non-leaded Package).
- FIG. 27 is a plan view showing the structure of the semiconductor device of Modification 7 of the embodiment
- FIG. 28 is a sectional view showing the structure of the semiconductor device shown in FIG. 27
- FIG. 29 is a sectional view showing the structure of the semiconductor device of Modification 7 of the embodiment.
- the semiconductor device shown in FIG. 27 and FIG. 28 is a so-called QFP 21 in which a plurality of outer parts 23 b which will become external connection terminals project from the four sides of a sealing body 22 having a substantially square planar shape.
- the semiconductor chip 12 is mounted over a tab 23 c , and the electrode pads 12 b of the semiconductor chip 12 and a plurality of inner parts 23 a are electrically connected with each other by the wires 11 .
- the semiconductor chip 12 and the wires 11 are resin sealed with the sealing body 22 made of a sealing resin.
- the first film 12 d is formed on the surface of the electrode pad 12 b of the semiconductor chip 12 and broken at the time of wire bonding to connect the wire 11 with the electrode pad 12 b , thereby making it possible to ensure the bonding reliability of wire bonding of the QFP 21 .
- the semiconductor device shown in FIG. 29 is a so-called QFN 24 in which a plurality of leads 25 which will become external connection terminals are exposed to the rear surface of the sealing body 22 having a substantially square planar shape.
- the semiconductor chip 12 is mounted over the tab 23 c , and the electrode pads 12 b of the semiconductor chip 12 and the leads 25 are electrically connected with each other by the wires 11 .
- the semiconductor chip 12 and the wires 11 are resin sealed with the sealing body 22 made of a sealing resin.
- the first film 12 d is formed on the surface of the electrode pad 12 b of the semiconductor chip 12 and broken at the time of wire bonding to connect the wire 11 with the electrode pad 12 b , thereby making it possible to ensure the bonding reliability of wire bonding of the QFN 24 .
- the solder bumps 17 are formed as the external connection terminals of the semiconductor device (BGA 10 ), and a solder material used for the solder bumps 17 is lead-free solder containing substantially no lead (Pb).
- the above solder material may be a solder material containing lead such as Sn—Pb-based solder.
- a solder material comprised of the above lead-free solder is preferably used.
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Abstract
A manufacturing method of a BGA, includes the steps of: providing a semiconductor chip having electrode pads; and removing a natural oxide film formed on the surface of each of the electrode pads. Further, a first film comprised of a conductive member is formed on the surface of the electrode pad exposed by removing the natural oxide film, a wire is connected with the first film, and part of the wire is brought into contact with the electrode pad to form an alloy layer at the interface between the wire and the electrode pad. The crystal structure of the first film is comprised of a body-centered cubic lattice or a hexagonal close-packed lattice. The cost of the semiconductor device can be reduced while the bonding reliability of wire bonding of the semiconductor device is ensured.
Description
- This application is a Continuation application of U.S. Ser. No. 14/711,014 filed May 13, 2015, which claims priority to Japanese Patent Application No. 2014-100434 filed on May 14, 2014. The subject matter of each is incorporated herein by reference in its entirety.
- The present invention relates to a manufacturing method of a semiconductor device and a semiconductor device, for example, an effective technology applied to a semiconductor device, in which wire bonding is carried out.
- Out of semiconductor devices including bonding wires (to be simply referred to as “wires” hereinafter), the structure of a semiconductor device including wires which contain copper as the main component is disclosed in Japanese Patent Unexamined Patent Application Publication No. 2013-118310 (Patent Document 1) and Japanese Patent Unexamined Patent Application Publication No. 2010-157683 (Patent Document 2).
- To cut the cost of a semiconductor device including wires, it is considered effective that, instead of wires made of gold (Au), wires made of a conductive material except for gold is used.
- However, when a natural oxide film is formed on the surface s of the electrode pads of a semiconductor chip, if wires made of a conductive material except for gold are used, a bonding failure may occur between the wires and the electrode pads.
- There is a method in which a conductive film made of gold is formed on the surfaces of the electrode pads of a semiconductor chip and wires are electrically connected with the electrode pads through this conductive film. This conductive film is, for example, a plating film, an OPM (Over Pad Metallization) film or an UBM (Under Bump Metallization) film. However, in the case of the above method, since gold is used as the material of the conductive film, it is not preferred from the viewpoint of reducing the cost of a semiconductor device.
- Then, the inventors of the present application investigated a technology capable of reducing the cost of a semiconductor device while ensuring the bonding reliability of wires.
- Other objects and novel features will become apparent from the description of this specification and the accompanying drawings.
- A manufacturing method of a semiconductor device according to an embodiment of the invention includes the steps of:
- (a) providing a semiconductor chip including an electrode pad;
- (b) after the step (a), removing a natural oxide film formed on the surface of the electrode pad; and
- (c) after the step (b), forming a pad-cover film, comprised of a conductive member, over the surface of the electrode pad exposed by removing the natural oxide film.
- The method further includes:
- (d) after the step (c), connecting a part of wire, comprised of a conductive material containing no gold, with the pad-cover film, and forming an alloy layer at the interface between the wire and the electrode pad, the crystal structure of the pad-cover film being comprised of one of a body-centered cubic lattice and a hexagonal close-packed lattice.
- A semiconductor device according to an embodiment of the invention includes a semiconductor chip including a plurality of electrode pads formed on the main surface, a plurality of leads, and a plurality of wires, comprised of a conductive material containing no gold, electrically connecting the electrode pads with the leads, respectively, in which a plurality of pad-cover films, comprised of a conductive member, are formed on the surfaces of the plurality of electrode pads, respectively, and the plurality of wires are connected with the electrode pads such that alloy layers are formed at the interfaces with the plurality of wires and the plurality of electrode pads, respectively. Further, in the semiconductor device, the above plurality of pad-cover films are arranged around connecting parts of the plurality of wires in the surfaces of the plurality of electrode pads, respectively, and the crystal structure of each of the pad-cover films is comprised of one of a body-centered cubic lattice and a hexagonal close-packed lattice.
- According to the above embodiment, the cost of the semiconductor device can be reduced while the bonding reliability of wire bonding in the semiconductor device is ensured.
-
FIG. 1 is a sectional view showing an example of the structure of a semiconductor device (BGA) according to an embodiment of the present invention; -
FIG. 2 is a partially enlarged sectional view showing an example of the structure of the wire bonding part of the semiconductor device shown inFIG. 1 ; -
FIG. 3 include a plan view and a partial sectional view showing an example of the structure of the wire bonding part shown inFIG. 2 ; -
FIG. 4 is a perspective view showing an example of the crystal structure of the first film of the semiconductor device shown inFIG. 1 ; -
FIG. 5 is a perspective view showing an example of the crystal structure of the first film of the semiconductor device shown inFIG. 1 ; -
FIG. 6 is a perspective view showing the crystal structure of the material of Comparative Example; -
FIG. 7 is a flow chart showing an example of the pre-process of the assembly of the semiconductor device shown inFIG. 1 ; -
FIG. 8 is a flow chart showing an example of the post-process of the assembly of the semiconductor device shown inFIG. 1 ; -
FIG. 9 is a sectional view showing an example of the structure after the pad opening of the pre-process shown inFIG. 7 ; -
FIG. 10 is a sectional view showing an example of a natural oxide film forming state in the pre-process shown inFIG. 7 ; -
FIG. 11 is a sectional view showing an example of the structure after the probe testing of the pre-process shown inFIG. 7 ; -
FIG. 12 is a sectional view showing an example of a natural oxide film removal state in the pre-process shown inFIG. 7 ; -
FIG. 13 is a sectional view showing an example of the structure after the formation of the first film in the pre-process shown inFIG. 7 ; -
FIG. 14 is a sectional view showing an example of a photoresist forming state in the pre-process shown inFIG. 7 ; -
FIG. 15 is a sectional view showing an example of the structure after the removal of the first film in the pre-process shown inFIG. 7 ; -
FIG. 16 is a sectional view showing an example of a photoresist removal state in the pre-process shown inFIG. 7 ; -
FIG. 17 is a plan view showing an example of the structure of a substrate used in the post-process shown inFIG. 8 ; -
FIG. 18 is a plan view showing an example of the structure after chip die bonding in the post-process shown inFIG. 8 ; -
FIG. 19 is a plan view showing an example of the structure after wire bonding in the post-process shown inFIG. 8 ; -
FIG. 20 is a plan view showing an example of the structure after molding in the post-process shown inFIG. 8 ; -
FIG. 21 is a sectional view showing an example of the structure cut along the line A-A ofFIG. 20 ; -
FIG. 22 is a sectional view showing an example of the structure at the time of ball affixing and substrate dicing in the post-process shown inFIG. 8 ; -
FIG. 23 is a partially enlarged sectional view showing the structure of the wiring bonding part ofModification 1 of the embodiment; -
FIG. 24 is a partially enlarged sectional view showing the structure of the wire bonding part of Comparative Example; -
FIG. 25 includes a plan view and a partial sectional view showing the structure of the wire bonding part ofModification 2 of the embodiment; -
FIG. 26 includes a plan view and a partial sectional view showing the structure of the wire bonding part ofModification 2 of the embodiment; -
FIG. 27 is a plan view showing the structure of the semiconductor device of Modification 7 of the embodiment; -
FIG. 28 is a sectional view showing the structure of the semiconductor device shown inFIG. 27 ; and -
FIG. 29 is a sectional view showing the structure of the semiconductor device of Modification 7 of the embodiment. - In the following embodiment, a description of the same or similar part is not repeated in principle unless it is particularly necessary.
- Further, the following embodiment is explained by dividing into a plurality of sections or embodiments when it is necessary for convenience sake. Unless it is clearly stated, they are not unrelated to each other, and one is a modification, details or supplementary explanation of part or all of the other.
- In the following embodiment, when the number of elements (including number, numerical value, quantity, range, etc.) is mentioned, it is not limited to a specific number and may be more or less than the specific number unless it is clearly specified or apparently limited to the specific number in principle.
- In the following embodiment, it is needless to say that the constituent elements (including element steps, etc.) are not always essential unless it is clearly stated and they are apparently considered as essential in principle.
- In the following embodiment, when expressions such as “comprising A”, “comprised of A”, “having A” and “including A” are used for the constituent element, etc., it is needless to say that other elements are not excluded unless it is clearly stated that the constituent element is the only element. Similarly, in the following embodiment, when the shape or positional relationship of the constituent element is mentioned, it includes a shape or position substantially close or similar to that shape or position unless it is clearly stated and it is considered that it is apparently that shape or position in principle. This can be said of the above numerical value and range.
- An embodiment of the present invention will be described in detail hereinunder with reference to the accompanying drawings. In all the drawings for explaining the embodiment, the same reference symbols are given to members having the same function and a repeated explanation thereof is omitted. Even a plan view may be hatched in order to make it easily understandable.
-
FIG. 1 is a sectional view showing an example of the structure of a semiconductor device (BGA) according to the embodiment,FIG. 2 is a partially enlarged sectional view showing an example of the structure of the wire bonding part of the semiconductor device shown inFIG. 1 , andFIG. 3 includes a plan view and a partial sectional view showing an example of the structure of the wire bonding part shown inFIG. 2 . - <Semiconductor Device>
- The semiconductor device according to this embodiment shown in
FIG. 1 is a semiconductor package in which asemiconductor chip 12 mounted over thetop surface 20 a of apackage substrate 20 which is a wiring board is resin-sealed with a sealingbody 13 and electrically connected with the bonding leads (leads) 20 c of thepackage substrate 20 bywires 11. - In this embodiment, a BGA (Ball Grid Array) 10 having a plurality of solder bumps (solder balls) 17 which will become external connection terminals in a grid (lattice) pattern over the
under surface 20 b of thepackage substrate 20 is taken as an example of the above semiconductor device. The solder bumps 17 may be provided, for example, along the periphery of theunder surface 20 b of thepackage substrate 20. - Describing the detailed constitution of the
BGA 10, theBGA 10 has the package substrate (may also be referred to as “BGA substrate”) 20 including thetop surface 20 a, the bonding leads 20 c which are connection terminals formed over thetop surface 20 a, and the under surface (rear surface, mounting surface) 20 b opposite to thetop surface 20 a. - The
BGA 10 further has thesemiconductor chip 12 mounted over thetop surface 20 a of thepackage substrate 20, thewires 11 electrically connecting the bonding leads 20 c of thepackage substrate 20 withelectrode pads 12 b exposed to themain surface 12 a of thesemiconductor chip 12, respectively, and the solder bumps 17 which are external connection terminals and provided over theunder surface 20 b of thepackage substrate 20. - The
semiconductor chip 12 mounted over thepackage substrate 20 has theelectrode pads 12 b which are bonding pads in such a manner that they are exposed to themain surface 12 a. - Over the
top surface 20 a of thepackage substrate 20, the bonding leads 20 c are arranged around thesemiconductor chip 12, and theelectrode pads 12 b exposed to themain surface 12 a of thesemiconductor chip 12 and the bonding leads 20 c are electrically connected with each other by therespective wires 11. - As described above, the
BGA 10 is a substrate type semiconductor package in which thesemiconductor chip 12 is mounted over thepackage substrate 20 and connected with thepackage substrate 20 by the wires and thesemiconductor chip 12 and thewires 11 are sealed with the sealingbody 13 formed from a resin. - The
semiconductor chip 12 has themain surface 12 a and arear surface 12 c which is opposite to themain surface 12 a, arranged opposed to thetop surface 20 a of thepackage substrate 20 and fixed to thetop surface 20 a of thepackage substrate 20 by adie bonding material 18 such as a resin paste material. - Herein, the
semiconductor chip 12 is formed from, for example, silicon, and theelectrode pads 12 b are formed from a material containing aluminum (Al) as the main component. Further, thewires 11 are formed from a material containing copper (Cu) as the main component. The sealing resin for forming the sealingbody 13 is, for example, a thermosetting epoxy resin. The external connection terminals of theBGA 10 aresolder bumps 17 formed from a solder material such as Sn—Pb-based solder or Pb-free solder, out of which Pb-free solder is preferably used. - The
package substrate 20 is a resin substrate to which, for example, a plurality of wiring layers and a plurality of insulating layers are formed on a core material such as a glass epoxy resin. - Thus, from the
electrode pads 12 b of thesemiconductor chip 12 to the solder bumps 17 which are the external connection terminals of theBGA 10 are electrically connected through thewires 11, the bonding leads 20 c and unshown via holes and bump lands. - A description is subsequently given of the structures of the
electrode pad 12 b of thesemiconductor chip 12 and thewire bonding part 11 a of theBGA 10 according to this embodiment with reference toFIG. 2 andFIG. 3 . - In the
BGA 10, a first film (pad-cover film) 12 d composed of a conductive member is formed on the surface of theelectrode pad 12 b of thesemiconductor chip 12. - Herein, the
electrode pad 12 b of thesemiconductor chip 12 is formed in such a manner that it is exposed to themain surface 12 a of thesemiconductor chip 12. That is, theelectrode pad 12 b is exposed to theopening 12 j of apassivation film 12 g which is an insulating film (protection film) made of, for example, SiO. - In this embodiment, a case where the
electrode pad 12 b is made of aluminum (Al) will be explained. - A metal film such as a Ti/TiN/
Ti film 12 i is formed below theelectrode pad 12 b made of aluminum. - As shown in
FIG. 2 , the first film (pad-cover film) 12 d is formed on the surface of theelectrode pad 12 b. Thisfirst film 12 d is comprised of a conductive member such as a chromium or tungsten member and connected with theelectrode pad 12 b in such a manner that thewire 11 breaks thefirst film 12 d. - That is, in the
semiconductor chip 12 of this embodiment, anatural oxide film 12 f shown inFIG. 11 which is formed by making an opening in thepassivation film 12 g when theelectrode pad 12 b is formed and described hereinafter is first removed to expose the pure aluminum surface of theelectrode pad 12 b, and then thefirst film 12 d which is stable as a pad-cover film is formed over this pure aluminum surface. Then, thefirst film 12 d is broken (destroyed) by thewire 11 at the time of wire bonding. - Therefore, a plurality of
broken pieces 12 m of the brokenfirst film 12 d remain in the vicinity of thebonding surface 11 c of thewire bonding part 11 a. At the time of wire bonding, part of thewire 11 which is a copper wire breaks thefirst film 12 d and contacts the purealuminum electrode pad 12 b, thereby forming analloy layer 12 e at the interface between thewire 11 and theelectrode pad 12 b. That is, Cu of thewire 11 and Al of theelectrode pad 12 b react with each other to form a Cu/Al layer as thealloy layer 12 e. - The
first film 12 d is located around the connecting part (wire bonding part 11 a) to theelectrode pad 12 b of thewire 11 over the surface of theelectrode pad 12 b. In this embodiment, as shown in the plan view ofFIG. 3 , thefirst film 12 d is formed over the entire surface of theelectrode pad 12 b. That is, thefirst film 12 d is formed to cover the entire surface of theelectrode pad 12 b. - At this point, as shown in the sectional view of
FIG. 3 , thefirst film 12 d is formed up to an area where it contacts thebonding surface 11 c of thewire bonding part 11 a. As shown in the plan view ofFIG. 3 , when looking at theelectrode pad 12 b from above, thefirst film 12 d enters the inner side of thewire 11 from theball diameter 11 b. - As shown in the plan view of
FIG. 3 , in an area away from thewire bonding part 11 a of the surface of theelectrode pad 12 b, a plurality of probe marks 12 k are formed by probe testing and covered by thefirst film 12 d. - A description is subsequently given of a condition for the
first film 12 d which is formed on the surface of theelectrode pad 12 b of thesemiconductor chip 12. - The
first film 12 d is preferably comprised of a conductive member (conductive material) and a low-resistance film. Further, it preferably has a large hardness difference from Al and Cu so that it is easily broken (easily fractured). That is, when thewire 11 is pressed by the load of wire bonding at the time of wire bonding, thefirst film 12 d is broken to stably bond thewire 11 to the pure Al of theelectrode pad 12 b. - At this point, the
first film 12 d is preferably broken but does not always need to be broken. - A description is subsequently given of the crystal structure of the
first film 12 d. -
FIG. 4 is a perspective view showing an example of the crystal structure (body-centered cubic lattice) of the first film of the semiconductor device shown inFIG. 1 ,FIG. 5 is a perspective view showing an example of the crystal structure (hexagonal close-packed lattice) of the first film of the semiconductor device shown inFIG. 1 , andFIG. 6 is a perspective view showing the crystal structure (face-centered cubic lattice) of the material of Comparative Example. - In the body-centered cubic lattice structure shown in
FIG. 4 ,atoms 19 are situated at the apexes and the center of a cubic unit lattice. In the hexagonal close-packed lattice structure shown inFIG. 5 , theatoms 19 are existent at the apexes of the top surface and the bottom surface of a regular hexagonal column and threeatoms 19 are existent at a height ½ of the total height of the regular hexagonal column. Further, in the face-centered cubic lattice structure of Comparative Example ofFIG. 6 , theatoms 19 are situated at the apexes and the centers of the faces of a unit lattice. - Al and Cu have a face-centered cubic lattice structure. Therefore, a crystal structure having a large hardness difference from Al and Cu so that it is easily broken is a condition required for the
first film 12 d with the result that the crystal structure of thefirst film 12 d of this embodiment is comprised of a body-centered cubic lattice or a hexagonal close-packed lattice. - Herein, examples of the material comprised of a body-centered cubic lattice used in the
first film 12 d include lithium (Li), sodium (Na), potassium (k), vanadium (V), chromium (Cr), iron (Fe), rubidium (Rb), niobium (Nb), molybdenum (Mo), barium (Ba), tantalum (Ta), tungsten (W) and europium (Eu). - Examples of the material comprised of a hexagonal close-packed lattice used in the
first film 12 d include beryllium (Be), magnesium (Mg), scandium (Sc), titanium (Ti), titanium nitride (TiN), cobalt (Co), zinc (Zn), yttrium (Y), zirconium (Zr), technetium (Tc), ruthenium (Ru) and gadolinium (Gd). Further, examples of the material comprised of a hexagonal close-packed lattice used in thefirst film 12 d include terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), hafnium (Hf), rhenium (Re) and osmium (Os). - When the first film (pad-cover film) 12 d is expressed by another definition, it is made of a passive metal (valve metal). The term “passive” means a state in which an oxide film resisting a corrosion function is formed on the surface of a metal, and the term “passive metal” means a metal which tends to become passive. That is, the passive metal is a metal which has a stable surface, is hardly oxidized and can keep bonding strength, such as chromium, titanium or tungsten.
- As understood from above, the material of the first film (pad-cover film) 12 d is preferably chromium, titanium or tungsten when breaking ease is taken into account and most preferably chromium from the viewpoint of corrosion resistance.
- Chromium hardly diffuses even at a high temperature. Chromium hardly produces Kerkendall voids which are voids formed by a diffusion phenomenon. Therefore, the
first film 12 d in this embodiment is most preferably a chromium film. - A description is subsequently given of the assembly of the semiconductor device of this embodiment.
-
FIG. 7 is a flow chart showing an example of the pre-process (method for manufacturing a semiconductor chip) of the assembly of the semiconductor device shown inFIG. 1 , andFIG. 8 is a flow chart showing an example of the post-process (method for manufacturing BGA) of the assembly of the semiconductor device shown inFIG. 1 .FIGS. 9 to 16 show a method for manufacturing a semiconductor chip.FIG. 9 is a sectional view showing an example of the structure after pad opening in the pre-process shown inFIG. 7 ,FIG. 10 is a sectional view showing an example of a natural oxide film forming state in the pre-process shown inFIG. 7 ,FIG. 11 is a sectional view showing an example of the structure after probe testing in the pre-process shown inFIG. 7 , andFIG. 12 is a sectional view showing an example of a natural oxide film removal state in the pre-process shown inFIG. 7 . - Further,
FIG. 13 is a sectional view showing an example of the structure after the formation of the first film in the pre-process shown inFIG. 7 ,FIG. 14 is a sectional view showing an example of a photoresist forming state in the pre-process shown inFIG. 7 ,FIG. 15 is a sectional view showing an example of the structure after the removal of the first film in the pre-process shown inFIG. 7 , andFIG. 16 is a sectional view showing an example of a photoresist removal state in the pre-process shown inFIG. 7 . -
FIGS. 17 to 22 show a method for manufacturing a semiconductor device (BGA).FIG. 17 is a plan view showing an example of the structure of a substrate used in the post-process shown inFIG. 8 ,FIG. 18 is a plan view showing an example of the structure after chip die bonding in the post-process shown inFIG. 8 ,FIG. 19 is a plan view showing an example of the structure after wire bonding in the post-process shown inFIG. 8 , andFIG. 20 is a plan view showing an example of the structure after molding in the post-process shown inFIG. 8 . Further,FIG. 21 is a sectional view showing an example of the structure cut along the line A-A ofFIG. 20 , andFIG. 22 is a sectional view showing an example of the structure at the time of ball affixing and substrate dicing in the post-process shown inFIG. 8 . - “Pad opening” shown in the step S1 of
FIG. 7 is carried out. At this point, as shown inFIG. 9 , a semiconductor wafer having a plurality of chip areas (semiconductor chips) with a plurality ofelectrode pads 12 b is provided, and apassivation film 12 g which is an insulating film and aTiN layer 12 q formed over theelectrode pad 12 b in each chip area in this wafer state are removed to form anopening 12 j so that theelectrode pad 12 b made of a material containing Al as the main component is exposed to theopening 12 j. A Ti/TiN/Ti film 12 i is formed below theelectrode pad 12 b. At this point, thepassivation film 12 g is removed by, for example, sputter etching (technology for removing a material by causing gas ions having an etching function to collide with the surface of the material). - After the above pad opening, “W testing P testing” (probe testing) shown in the step S2 of
FIG. 7 is carried out. At this point, a probe needle (not shown) is brought into contact with theelectrode pad 12 b shown inFIG. 7 to carry out a conduction test. Stated more specifically, as shown inFIG. 3 , the above probe needle is brought into contact with an area outside thewire bonding part 11 a of theelectrode pad 12 b, whereby a plurality of probe marks 12 k shown inFIG. 11 are formed. - After the
above passivation film 12 g is removed, along with the passage of time, as shown inFIG. 10 andFIG. 11 , anatural oxide film 12 f is formed on the surface (exposed surface, wire bonding surface) of the exposedelectrode pad 12 b. Thisnatural oxide film 12 f is made of, for example, Al2O3. - After the above probe testing, “oxide film removal/film formation” shown in the step S3 of
FIG. 7 is carried out. - As shown in
FIG. 12 , thenatural oxide film 12 f shown inFIG. 11 formed on the surface (exposed surface, wire bonding surface) of theelectrode pad 12 b is first removed, thereby exposing theAl electrode pad 12 b. - At this point, in this embodiment, the
natural oxide film 12 f is removed in a vacuum atmosphere. For example, a sputtering apparatus is used to remove (sputter etch) thisnatural oxide film 12 f in a vacuum atmosphere in the vacuum processing chamber (vacuum chamber) of this sputtering apparatus. In other words, the sputtering apparatus is used to etch thenatural oxide film 12 f. - After the
natural oxide film 12 f is removed, a first film (pad-cover film) 12 d comprised of a conductive member shown inFIG. 13 is formed on the surface (exposed surface, wire bonding surface) of theelectrode pad 12 b exposed by removing thenatural oxide film 12 f. - At this point, it is preferred that, in the sputtering apparatus used to remove the
natural oxide film 12 f and while keeping the vacuum state, thefirst film 12 d should be formed without contacting air after moving into a vacuum processing chamber for film formation. - That is, in the vacuum processing chambers of the sputtering apparatus, the removal of the
natural oxide film 12 f and the formation of the first film (sputtered film) are carried out continuously. - Thereby, it is possible to prevent the formation of an oxide film over the outermost surface of the
electrode pad 12 b made of Al. - Further, since the removal of the
natural oxide film 12 f and the formation of thefirst film 12 d are carried out continuously so as to form thefirst film 12 d over the surface (exposed surface, wire bonding surface) of theelectrode pad 12 b by sputtering in the same vacuum atmosphere, film formation processing can be carried out efficiently. - Herein, the first film (pad-cover film) 12 d has a crystal structure comprised of a body-centered cubic lattice or a hexagonal close-packed lattice. Since Al (
electrode pad 12 b) and Cu (wire 11) are comprised of a face-centered cubic lattice, a crystal structure which has a large hardness difference from Al and Cu so that the crystal structure can be easily broken is a condition required for thefirst film 12 d. - Therefore, the crystal structure of the
first film 12 d is comprised of a body-centered cubic lattice or a hexagonal close-packed lattice. - As an example, the
first film 12 d is made of chromium, tungsten or titanium. - In the structure shown in
FIG. 13 , thefirst film 12 d is formed over theelectrode pad 12 b and also thepassivation film 12 g. - After the
first film 12 d is formed, as shown inFIG. 14 , aphotoresist film 12 h is formed. That is, thephotoresist film 12 h is formed over thefirst film 12 d over the area of theelectrode pad 12 b. - Then, as shown in
FIG. 15 , after thephotoresist film 12 h is formed, thefirst film 12 d protruding outward from above the area of theelectrode pad 12 b as shown inFIG. 14 is removed by using thephotoresist film 12 h as a mask. At this point, for example, the sputtering apparatus is used to remove (sputter etch) thefirst film 12 d. Further, after the protrudingfirst film 12 d is removed, thephotoresist film 12 h is removed to expose thefirst film 12 d over theelectrode pad 12 b as shown inFIG. 16 . The removal of the protrudingfirst film 12 d shown inFIG. 15 and the removal of thephotoresist film 12 h shown inFIG. 16 may be carried out by etching using an etching apparatus. - Thereby, the
first film 12 d is formed over each of theelectrode pads 12 b of each chip area (semiconductor chip 12) in the wafer. - After the above oxide film removal/film formation, backgrinding shown in the step S4 of
FIG. 7 is carried out. That is, the rear surface of the wafer is ground to reduce the thickness of the wafer to a desired value. Thereafter, as shown in the step S5, the post-process comes next. That is, the assembly of theBGA 10 ofFIG. 1 which is an example of the semiconductor device comes next. - In the assembly process (post-process) of the
BGA 10 shown inFIG. 1 , “dicing” shown in the step S11 ofFIG. 8 is first carried out. That is, the wafer having a desired thickness formed by backgrinding in the step S5 ofFIG. 7 is diced to be divided into individual semiconductor chips 12 (segmentation). - Meanwhile, a
multipiece substrate 14 shown inFIG. 17 is provided to form theBGA 10. That is, themultipiece substrate 14 having a plurality ofdevice areas 14 c over thetop surface 14 a is provided. Thedevice areas 14 c are formed in a matrix, and a plurality ofholes 14 d are formed in the peripheral part of the substrate. Theholes 14 d are used for the positioning of themultipiece substrate 14. - The
BGA 10 of this embodiment is a semiconductor device which is assembled by using themultipiece substrate 14. At this point, as for a sealing step (molding step) for the assembly of this embodiment, a case where resin sealing is carried out by so-called “batch molding system” in which a resin is supplied into a cavity while the semiconductor chips 12 mounted in thedevice areas 14 c are covered by the single cavity (not shown) will be explained. The above molding system is not limited to the batch molding system. - After the above dicing, “chip die bonding” shown in the step S12 of
FIG. 8 is carried out. That is, as shown inFIG. 18 , the semiconductor chips 12 are mounted in therespective device areas 14 c of themultipiece substrate 14. Thereby, the semiconductor chips 12 are mounted over thetop surface 14 a of themultipiece substrate 14. - The semiconductor chips 12 are fixed to the substrate by the
die bonding material 18 as shown inFIG. 1 . - After the above chip die bonding, “wire bonding” shown in the step S13 of
FIG. 8 is carried out. At this point, as shown inFIG. 19 , the electrode pads (seeFIG. 1 ) 12 b of the semiconductor chips 12 and the bonding leads (seeFIG. 1 ) 20 c corresponding to these are electrically connected with each other by bondingwires 11, respectively. - The
wires 11 are, for example, Cu wires. - In the wire bonding of this embodiment, as shown in
FIG. 2 , thewire 11 is connected with thefirst film 12 d over theelectrode pad 12 b of thesemiconductor chip 12, and part of thewire 11 is brought into contact with theelectrode pad 12 b to form thealloy layer 12 e at the interface between thewire 11 and theelectrode pad 12 b. - Further, at the time of wire bonding, the
first film 12 d is broken by thewire 11, whereby the pureAl electrode pad 12 b and the Cu wire (wire 11) are electrically connected with each other. - Therefore,
broken pieces 12 m of thefirst film 12 d remain around the interface between theelectrode pad 12 b and thewire bonding part 11 a. - As described above, the
Al electrode pad 12 b and thewire 11 are connected with each other by breaking (destroying) thefirst film 12 d with thewire 11 in the wire bonding of this embodiment, thereby making it possible to form thealloy layer 12 e made of Cu and Al at the interface between thewire 11 and theelectrode pad 12 b. - Thereby, the bonding strength of the Cu wire (wire 11) can be ensured with the result that the bonding reliability of wire bonding of the
BGA 10 can be ensured. - The
first film 12 d is preferably broken by thewire 11 but not always need to be broken, and thewire 11 and theelectrode pad 12 b may not be electrically connected with each other through thefirst film 12 d. When thewire 11 and theelectrode pad 12 b are connected with each other through thefirst film 12 d, high bonding reliability can be obtained as compared with a case where thewire 11 and theelectrode pad 12 b are connected with each other through an oxide film. - After wire bonding, “molding” shown in the step S14 of
FIG. 8 is carried out. Molding in this embodiment is batch molding as described above. - Thereby, as shown in
FIG. 20 , abatch sealing part 16 is formed over thetop surface 14 a of themultipiece substrate 14, and as shown inFIG. 21 , the semiconductor chips 12 are sealed with thebatch sealing part 16. - After molding, “ball affixing” shown in the step S15 of
FIG. 8 is carried out. That is, as shown inFIG. 22 , a plurality of solder bumps (solder balls) 17 are formed as external connection terminals over theunder surface 14 b of themultipiece substrate 14. - Lead-free solder is preferably used as a solder material used for the solder bumps 17. By employing lead-free solder, environmental load can be reduced. Herein, the term “lead-free solder” means solder having a lead (Pb) content of 0.1 wt % or less, and this content is defined as the standard of the RoHS (Restriction of Hazardous Substances) Directive.
- After ball affixing, “marking” shown in the step S16 of
FIG. 8 is carried out. For example, a predetermined production number or management number is marked by applying a laser beam to the top part of thebatch sealing part 16. - After marking, “substrate dicing” shown in the step S17 of
FIG. 8 is carried out. That is, thebatch sealing part 16 and themultipiece substrate 14 shown inFIG. 22 are diced for each device area unit by adicing blade 15 to be divided. - Thereby, they are divided into the BGA's 10 shown in
FIG. 1 . - After substrate dicing, “testing” shown in the step S18 of
FIG. 8 is carried out. That is, a test such as an operation test is carried out on the separated BGA's 10. Thereby, non-defective products are selected. - After testing, “appearance” shown in the step S19 of
FIG. 8 is carried out. That is, the appearance of theBGA 10 selected by testing is inspected, thereby completing the assembly of theBGA 10 shown inFIG. 1 . - In the manufacturing method of the
BGA 10 and theBGA 10 according to the embodiment, thefirst film 12 d such as a chromium film is formed on the surface of theelectrode pad 12 b which is formed in themain surface 12 a of thesemiconductor chip 12 and from which thenatural oxide film 12 f has been removed and destroyed to bond the Cu wire (wire 11) to theelectrode pad 12 b. - At this point, the
first film 12 d such as a chromium or tungsten film has a large hardness difference from Al and Cu so that it is easily broken. - Therefore, since the
wire 11 is bonded to the pure Al surface of theelectrode pad 12 b, the bonding part between thewire 11 and theelectrode pad 12 b can be stabilized. - As a result, the bonding reliability of wire bonding of the
BGA 10 can be ensured. - Further, by bonding the
wire 11 to the pure Al surface of theelectrode pad 12 b, electric resistance can be reduced, thereby making it possible to improve the electrical properties of thewire bonding part 11 a. - By using the
wire 11 such as a Cu wire except for a gold wire, the cost of theBGA 10 can be reduced. That is, the cost of theBGA 10 can be reduced while the bonding reliability of wire bonding of theBGA 10 is ensured. - While the invention made by the inventors of the present invention has been described in detail based on the embodiment, it is to be understood that the invention is not limited to the embodiment which has been described above and that various modifications may be made in the invention without departing from the spirit and scope thereof.
-
FIG. 23 is a partially enlarged sectional view showing the structure of the wire bonding part ofModification 1 of the embodiment, andFIG. 24 is a partially enlarged sectional view showing the structure of the wire bonding part of Comparative Example. -
FIG. 24 shows the structure which was compared and investigated by the inventors of the present application. InModification 1, a measure for asemiconductor chip 12 which requires thickAl electrode pads 12 b in consideration of electric properties will be explained. In thesemiconductor chip 12 having thickAl electrode pads 12 b, apad splash 12 n (embossment of theelectrode pad 12 b) tends to be formed around thewire bonding part 11 a of theelectrode pad 12 b. - The
pad splash 12 n tends to become large in the case of thethick electrode pad 12 b. However, when the thickness of theelectrode pad 12 b is reduced, the thickness of the pad below thewire bonding part 11 a becomes small. Accordingly, base damage may occur. Therefore, it is difficult to increase bonding load at the time of wire bonding. - Then, as shown in
FIG. 23 , an intermediate film (second film) having high hardness is formed in the thickness direction of theelectrode pad 12 b. Theintermediate film 12 p does not need to be located at an intermediate position in the thickness direction of theelectrode pad 12 b and may be formed on an upper layer side or a lower layer side in the thickness direction of theelectrode pad 12 b. - The
intermediate film 12 p is comprised of a conductive member. When theintermediate film 12 p is formed in theelectrode pad 12 b, the stiffness of theelectrode pad 12 b can be strengthened. Also, thepad splash 12 n can be suppressed. Further, damage to the substrate can be reduced. - In the above embodiment, the
first film 12 d is formed over the entire surface of theelectrode pad 12 b as shown inFIG. 3 . As shown inFIGS. 25 and 26 , thefirst film 12 d may be formed only in an area where thewire 11 is to be bonded (area where thewire bonding part 11 a is to be bonded). -
FIGS. 25 and 26 are plan views and partial sectional views showing the structure of the wire bonding part ofModification 2 of the embodiment. - As for the structure shown in
FIG. 25 , thefirst films 12 d are ring-shaped. A plurality of (for example, two) the ring-shapedfirst films 12 d having different ring diameters are formed concentrically. At this point, the ring-shapedfirst films 12 d are not connected with each other and each divided into, for example, four. - That is, the separate
first films 12 d, and thenatural oxide films 12 f arranged around thefirst films 12 d are in contact with thewire bonding part 11 a, whereby the separatefirst films 12 d are easily broken as the number of the interfaces of thefirst films 12 d at the respective ends increases. - Further, the ring-shaped
first films 12 d and the natural oxide films are divided according to a load distribution since they differ in the amount of applied load according to the distance from right below a capillary (not shown) as a bonding tool. Therefore, as compared with a case where thenatural oxide film 12 f is formed, the bonding properties of thewire 11 can be enhanced. - As for the structure shown in
FIG. 26 , thefirst film 12 d is divided into a plurality of small squares in the plan view. Also in this case, the dividedfirst films 12 d and thenatural oxide films 12 f arranged around thefirst films 12 d are in contact with thewire bonding part 11 a. Like the structure shown inFIG. 25 , the dividedfirst films 12 d are easily broken since the number of the interfaces of thefirst films 12 d at the respective ends increases. - That is, by dividing the pattern of the
first film 12 d in contact with thewire bonding part 11 a, the dividedfirst films 12 d and thenatural oxide films 12 f around thefirst films 12 d come in contact with thewire bonding part 11 a with the result that the number of the interfaces of thefirst films 12 d at the ends (peripheries) increases. Thereby, thefirst films 12 d can be easily broken. - In the above embodiment, the first film (pad-cover film) 12 d consists of a single layer. The
first film 12 d may consist of a plurality of layers. For example, it may have a two-layer structure consisting of an upper chromium layer and a lower copper layer, whereby the copper layer underlies the chromium layer, thereby making it possible to enhance its bonding force to the Cu wire (wire 11). - The
first film 12 d may consist of a mixed layer (single layer) made of chromium and copper. Further, it may be made of a compound (single layer) containing chromium. - In the above embodiment, the
electrode pad 12 b of thesemiconductor chip 12 is made of a material containing aluminum as the main component and thewire 11 is made of a material containing copper as the main component. The main component of theelectrode pad 12 b and the main component of thewire 11 may be any material other than the above materials except for gold (Au). - For example, they may be a combination of a
wire 11 containing aluminum as the main component and anelectrode pad 12 b containing aluminum as the main component, or a combination of awire 11 containing aluminum as the main component and anelectrode pad 12 b containing copper as the main component. Further, they may be a combination of a wire containing silver as the main component and anelectrode pad 12 b containing aluminum as the main component, a combination of awire 11 containing silver as the main component and anelectrode pad 12 b containing copper as the main component, or a combination of awire 11 containing copper as the main component and anelectrode pad 12 b containing copper as the main component. - Further, as a combination other than the above combinations, a combination of a
wire 11 made of a material except for gold and anelectrode pad 12 b made of a material except for gold may be used. - In the above embodiment, as a method for removing the
natural oxide film 12 f formed on the surface of theelectrode pad 12 b of thesemiconductor chip 12, sputter etching using a sputtering apparatus is employed to remove thenatural oxide film 12 f. The removal of thenatural oxide film 12 f may be carried out by, for example, etching using an etching apparatus. - In the above embodiment, after the
natural oxide film 12 f is removed, thefirst film 12 d is formed on the surface (fresh surface) of the newly exposedelectrode pad 12 b by sputtering using a sputtering apparatus. The formation of thefirst film 12 d may be carried out by, for example, plating. - In the above embodiment, the semiconductor device is the
BGA 10. The above semiconductor device may be a QFP (Quad Flat Package) which is assembled by using lead frames or a QFN (Quad Flat Non-leaded Package). -
FIG. 27 is a plan view showing the structure of the semiconductor device of Modification 7 of the embodiment,FIG. 28 is a sectional view showing the structure of the semiconductor device shown inFIG. 27 , andFIG. 29 is a sectional view showing the structure of the semiconductor device of Modification 7 of the embodiment. - The semiconductor device shown in
FIG. 27 andFIG. 28 is a so-calledQFP 21 in which a plurality ofouter parts 23 b which will become external connection terminals project from the four sides of a sealingbody 22 having a substantially square planar shape. - In the
QFP 21, thesemiconductor chip 12 is mounted over atab 23 c, and theelectrode pads 12 b of thesemiconductor chip 12 and a plurality ofinner parts 23 a are electrically connected with each other by thewires 11. Thesemiconductor chip 12 and thewires 11 are resin sealed with the sealingbody 22 made of a sealing resin. - Even in this
QFP 21, thefirst film 12 d is formed on the surface of theelectrode pad 12 b of thesemiconductor chip 12 and broken at the time of wire bonding to connect thewire 11 with theelectrode pad 12 b, thereby making it possible to ensure the bonding reliability of wire bonding of theQFP 21. - Then, the semiconductor device shown in
FIG. 29 is a so-calledQFN 24 in which a plurality ofleads 25 which will become external connection terminals are exposed to the rear surface of the sealingbody 22 having a substantially square planar shape. - Also in the
QFN 24, thesemiconductor chip 12 is mounted over thetab 23 c, and theelectrode pads 12 b of thesemiconductor chip 12 and theleads 25 are electrically connected with each other by thewires 11. Thesemiconductor chip 12 and thewires 11 are resin sealed with the sealingbody 22 made of a sealing resin. - Even in this
QFN 24, thefirst film 12 d is formed on the surface of theelectrode pad 12 b of thesemiconductor chip 12 and broken at the time of wire bonding to connect thewire 11 with theelectrode pad 12 b, thereby making it possible to ensure the bonding reliability of wire bonding of theQFN 24. - In the above embodiment, the solder bumps 17 are formed as the external connection terminals of the semiconductor device (BGA 10), and a solder material used for the solder bumps 17 is lead-free solder containing substantially no lead (Pb). The above solder material may be a solder material containing lead such as Sn—Pb-based solder. When an environmental contamination problem is taken into consideration, a solder material comprised of the above lead-free solder is preferably used.
- Further, a combination of the above modifications may be used without departing from the scope of the technical idea described in the above embodiment.
Claims (15)
1. A manufacturing method of a semiconductor device, comprising the steps of:
(a) removing a natural oxide film from a surface of an electrode pad on a semiconductor chip;
(b) after the step (a), forming a conductive pad-cover film over the surface of the electrode pad exposed by removing the natural oxide film; and
(c) after the step (b), connecting a wire to the conductive pad-cover film, wherein
the step (c) includes braking the conductive pad-cover film and forming an alloy layer at the interface between the wire and the electrode pad to connect the wire with the electrode pad.
2. The manufacturing method according to claim 1 , wherein a crystal structure of the conductive pad-cover film is one of a body-centered cubic lattice and a hexagonal close-packed lattice.
3. The manufacturing method according to claim 1 , wherein the conductive pad-cover film contains chromium, titanium or tungsten.
4. The manufacturing method according to claim 1 , wherein
the step (a) includes removing the natural oxide film in a vacuum atmosphere, and
the step (b) includes maintaining the vacuum atmosphere of step (a), in which the conductive pad-cover film is formed.
5. The manufacturing method according to claim 4 , wherein the step (a) includes sputter etching to remove the natural oxide.
6. The manufacturing method according to claim 1 , wherein in the step (b), the conductive pad-cover film is formed over the entire surface of the electrode pad.
7. The manufacturing method according to claim 1 , wherein the wire contains copper.
8. The manufacturing method according to claim 7 , wherein
the electrode pad contains aluminum, and
the wire contains the copper as a main component.
9. The manufacturing method according to claim 1 , further comprising, after the step (b), connecting a probe to the electrode pad to perform a conductive test, wherein
the probe is connected to an area of the electrode pad to which no wire is connected.
10. A semiconductor device comprising:
a semiconductor chip including:
a main surface, and
a plurality of electrode pads on the main surface;
a plurality of leads around the semiconductor chip; and
a plurality of wires electrically connecting the electrode pads with the leads, respectively, wherein
a plurality of conductive pad-cover films are formed on surfaces the plurality of electrode pads, respectively, and
the plurality of wires are directly connected with the plurality of electrode pads through broken areas of the conductive pad-cover films where the electrode pads are exposed, alloy layers being formed at interfaces between the plurality of wires and the plurality of electrode pads, respectively.
11. The semiconductor device according to claim 10 , wherein a crystal structure of each of the conductive pad-cover films is one of a body-centered cubic lattice and a hexagonal close-packed lattice.
12. The semiconductor device according to claim 10 , wherein the conductive pad-cover film contains chromium, titanium or tungsten.
13. The semiconductor device according to claim 10 , wherein the plurality of wires each contain copper.
14. The semiconductor device according to claim 10 , wherein
the plurality of electrode pads each contain aluminum, and
the plurality of wires each contain the copper as a main component.
15. The semiconductor device according to claim 10 , wherein part of the plurality of electrode pads each have a probe mark created by a probe for a conductive test, the probe mark existing in an area to which no wire is connected.
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JP2014100434A JP2015220248A (en) | 2014-05-14 | 2014-05-14 | Semiconductor device manufacturing method and semiconductor device |
US14/711,014 US9293436B2 (en) | 2014-05-14 | 2015-05-13 | Bonding wire to bonding pad |
US15/071,545 US20160197050A1 (en) | 2014-05-14 | 2016-03-16 | Manufacturing method of semiconductor device and semiconductor device |
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US15/071,545 Abandoned US20160197050A1 (en) | 2014-05-14 | 2016-03-16 | Manufacturing method of semiconductor device and semiconductor device |
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US20180182644A1 (en) * | 2016-12-27 | 2018-06-28 | Renesas Electronics Corporation | Method for manufacturing a semiconductor device |
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JP2018046242A (en) | 2016-09-16 | 2018-03-22 | ルネサスエレクトロニクス株式会社 | Method of manufacturing semiconductor device |
DE102018105462A1 (en) | 2018-03-09 | 2019-09-12 | Infineon Technologies Ag | SEMICONDUCTOR DEVICE CONTAINING A BONDPAD AND A BONDED WIRE OR CLIP |
TWI721389B (en) * | 2019-03-18 | 2021-03-11 | 蔡幸樺 | Bonding structure for electronic packages and bonding wire |
US11830836B2 (en) * | 2021-10-04 | 2023-11-28 | Nanya Technology Corporation | Semiconductor device with wire bond and method for preparing the same |
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JP3939503B2 (en) * | 2001-03-22 | 2007-07-04 | アルプス電気株式会社 | Magnetic sensing element and manufacturing method thereof |
US8536062B2 (en) * | 2007-09-21 | 2013-09-17 | Advanced Inquiry Systems, Inc. | Chemical removal of oxide layer from chip pads |
JP5331610B2 (en) | 2008-12-03 | 2013-10-30 | ルネサスエレクトロニクス株式会社 | Semiconductor integrated circuit device |
JP2013118310A (en) | 2011-12-05 | 2013-06-13 | Jjtech Co Ltd | Semiconductor device |
JP6100569B2 (en) * | 2013-03-21 | 2017-03-22 | ルネサスエレクトロニクス株式会社 | Semiconductor device and manufacturing method thereof |
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2014
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Cited By (2)
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US20180182644A1 (en) * | 2016-12-27 | 2018-06-28 | Renesas Electronics Corporation | Method for manufacturing a semiconductor device |
US10128130B2 (en) * | 2016-12-27 | 2018-11-13 | Renesas Electronics Corporation | Method for manufacturing a semiconductor device |
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US9293436B2 (en) | 2016-03-22 |
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