US20150017780A1 - Nonvolatile Resistive Memory Element With an Integrated Oxygen Isolation Structure - Google Patents
Nonvolatile Resistive Memory Element With an Integrated Oxygen Isolation Structure Download PDFInfo
- Publication number
- US20150017780A1 US20150017780A1 US14/504,620 US201414504620A US2015017780A1 US 20150017780 A1 US20150017780 A1 US 20150017780A1 US 201414504620 A US201414504620 A US 201414504620A US 2015017780 A1 US2015017780 A1 US 2015017780A1
- Authority
- US
- United States
- Prior art keywords
- layer
- oxygen
- memory
- memory element
- memory device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 190
- 239000001301 oxygen Substances 0.000 title claims abstract description 190
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 171
- 238000002955 isolation Methods 0.000 title claims abstract description 76
- 239000000463 material Substances 0.000 claims abstract description 64
- 230000004888 barrier function Effects 0.000 claims abstract description 59
- 230000005012 migration Effects 0.000 claims abstract description 21
- 238000013508 migration Methods 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims description 63
- -1 oxygen ions Chemical class 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910016909 AlxOy Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 14
- 239000010410 layer Substances 0.000 description 247
- 230000008569 process Effects 0.000 description 39
- 238000005137 deposition process Methods 0.000 description 14
- 150000002500 ions Chemical class 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 238000000231 atomic layer deposition Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 229910052723 transition metal Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000012777 electrically insulating material Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 230000037361 pathway Effects 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 150000003624 transition metals Chemical class 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- ZYLGGWPMIDHSEZ-UHFFFAOYSA-N dimethylazanide;hafnium(4+) Chemical compound [Hf+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C ZYLGGWPMIDHSEZ-UHFFFAOYSA-N 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910000480 nickel oxide Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- INZDTEICWPZYJM-UHFFFAOYSA-N 1-(chloromethyl)-4-[4-(chloromethyl)phenyl]benzene Chemical compound C1=CC(CCl)=CC=C1C1=CC=C(CCl)C=C1 INZDTEICWPZYJM-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical class [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 1
- SKKMWRVAJNPLFY-UHFFFAOYSA-N azanylidynevanadium Chemical compound [V]#N SKKMWRVAJNPLFY-UHFFFAOYSA-N 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910003440 dysprosium oxide Inorganic materials 0.000 description 1
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(iii) oxide Chemical compound O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- WHJFNYXPKGDKBB-UHFFFAOYSA-N hafnium;methane Chemical compound C.[Hf] WHJFNYXPKGDKBB-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910003454 ytterbium oxide Inorganic materials 0.000 description 1
- 229940075624 ytterbium oxide Drugs 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 235000014692 zinc oxide Nutrition 0.000 description 1
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical class [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 1
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- H01L45/16—
-
- H01L45/10—
-
- H01L45/1233—
-
- H01L45/146—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/25—Multistable switching devices, e.g. memristors based on bulk electronic defects, e.g. trapping of electrons
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
Definitions
- This invention relates to nonvolatile resistive memory elements, and more particularly, to a nonvolatile resistive memory element with an integrated oxygen isolation structure and methods for forming the same.
- Nonvolatile memory elements are used in devices requiring persistent data storage, such as digital cameras and digital music players, as well as in computer systems. Electrically-erasable programmable read only memory (EPROM) and NAND flash are nonvolatile memory technologies currently in use. However, as device dimensions shrink, scaling issues pose challenges for traditional nonvolatile memory technology. This has led to the investigation of alternative nonvolatile memory technologies, including resistive switching nonvolatile memory.
- EPROM electrically-erasable programmable read only memory
- NAND flash are nonvolatile memory technologies currently in use.
- scaling issues pose challenges for traditional nonvolatile memory technology. This has led to the investigation of alternative nonvolatile memory technologies, including resistive switching nonvolatile memory.
- Resistive switching nonvolatile memory is formed using memory elements that are bistable, i.e., having two stable states with different resistances.
- a bistable memory element can be placed in a high resistance state or a low resistance state by application of suitable voltages or currents. Voltage pulses are typically used to switch the bistable memory element from one resistance state to the other. Subsequently, nondestructive read operations can be performed on the memory element to ascertain the value of a data bit that is stored therein.
- oxygen vacancies and the movement thereof are believed to be the primary mechanism of the “on” and “off” states of resistive switching memory devices. Furthermore, it is known that such oxygen vacancies can be eliminated or otherwise affected by the migration of even a small number of mobile oxygen ions into the memory element, either during fabrication or operation of the memory device.
- bistable memory elements formed with relatively few oxygen vacancies formed therein can result in lower operating voltages and currents, it is generally desirable to minimize the number of oxygen vacancies formed in bistable memory elements.
- bistable memory elements are more sensitive to oxygen migration during fabrication and/or operation, since the migration of even a very small number of mobile oxygen ions into such memory elements can significantly alter the performance and longevity of the memory element.
- resistive bistable memory elements there is a trade-off in the design of resistive bistable memory elements between those configurations having lower operating voltages and currents, which benefit from having fewer oxygen vacancies, and those configurations having higher endurance and reliability, which benefit from having more oxygen vacancies.
- One or more embodiments of the present invention set forth a nonvolatile resistive memory element having one or more novel oxygen isolation structures and methods of forming the same.
- a nonvolatile memory element comprises a first layer operable as an electrode layer and formed above a substrate, a second layer operable as a variable resistance layer and disposed between the first layer and a third layer operable as an electrode layer, and a fourth layer that is operable as an oxygen barrier layer disposed adjacent to one or more of the first layer, the second layer, and the third layer, wherein the fourth layer comprises a material having an amorphous structure.
- a nonvolatile memory element comprises a first layer operable as an electrode layer and formed above a substrate, a second layer operable as a variable resistance layer and disposed between the first layer and a third layer operable as an electrode layer, and a fourth layer that is operable as an oxygen barrier layer and is disposed on a sidewall of the second layer, wherein the fourth layer comprises a material having an amorphous structure.
- a nonvolatile memory element comprises a first layer operable as an electrode layer and formed above a substrate, a second layer operable as a variable resistance layer and disposed between the first layer and a third layer operable as an electrode layer, and a fourth layer that is operable as a sacrificial layer, disposed adjacent to one or more of the first layer, the second layer, and the third layer, wherein the fourth layer comprises a material that is more reactive with oxygen than a material in the second layer.
- FIG. 1 is a perspective view of a memory array of memory devices, configured according to embodiments of the invention.
- FIG. 2A is a schematic cross-sectional view of a memory device, configured in accordance with an embodiment of the invention.
- FIG. 2B schematically illustrates a memory device configured to allow current to flow through the memory device in a forward direction, according to embodiments of the invention.
- FIG. 3 sets forth a log-log plot of current versus voltage of a bipolar switching curve for one embodiment of a memory element, according to an embodiment of the invention.
- FIG. 4 is a schematic cross-sectional view of a memory device that has one or more integrated oxygen isolation structures and is formed from a series of deposited layers, according to an embodiment of the invention.
- FIGS. 5A and 5B are schematic cross-sectional views of various embodiments of a top oxygen isolation layer in a memory device, as indicated in FIG. 4 .
- FIG. 6 is a schematic cross-sectional view of a memory device formed with oxygen barrier layers formed on sidewalls of a memory element, according to an embodiment of the invention.
- FIG. 7 sets forth a flowchart of method steps in a process sequence for forming a memory device, according to embodiments of the invention.
- Embodiments of the invention set forth a nonvolatile resistive memory device having one or more novel oxygen isolation structures and methods of forming the same.
- One such oxygen isolation structure may be an oxygen barrier layer that isolates the resistive switching material of the nonvolatile memory element from other portions of the resistive memory device during fabrication and/or operation of the memory device. Specifically, the oxygen barrier layer encapsulates the regions of one or more of the memory elements to prevent the depletion of oxygen vacancies from such element.
- Another such oxygen isolation structure may be a sacrificial layer that reacts with unwanted oxygen migrating toward a memory element of the resistive memory device during fabrication and/or operation of the memory device.
- the sacrificial layer comprises a material that reacts with oxygen present in the memory element in order to maintain or increase the oxygen vacancies in such element.
- Use of the oxygen barrier layer and/or sacrificial layer improves performance and longevity of the nonvolatile resistive memory element by preserving the defects in the resistive switching material, such as oxygen vacancies, that are responsible for the switching capability of the resistive switching material.
- FIG. 1 is a perspective view of a memory array 100 of memory devices 200 , configured according to embodiments of the invention.
- Memory array 100 may be part of a larger memory device or other integrated circuit structure, such as a system-on-a-chip type device.
- Memory array 100 may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, hand-held computers, and music players.
- memory array 100 is illustrated as a single layer memory array structure. However, memory arrays such as memory array 100 can also be stacked in a vertical fashion to make multilayer memory array structures.
- Each of memory devices 200 comprises a nonvolatile resistive switching memory device, such as a resistive random access memory (ReRAM) device.
- Memory device includes a memory element 112 , one or more novel oxygen isolation structures, and in some embodiments a current steering device. Embodiments of oxygen isolation structures are described below in conjunction with FIGS. 4-6 , and embodiments of a current steering device are described below in conjunction with FIGS. 2A , 2 B.
- memory elements 112 in memory devices 200 may be formed from one or more material layers 114 , which are described below in conjunction with FIG. 4 .
- Read and write circuitry (not shown) is connected to memory devices 200 using bit line electrodes 102 and orthogonally positioned word line electrodes 118 .
- Bit line electrodes 102 and word line electrodes 118 are sometimes referred to as “bit lines” and “word lines,” and are used to read and write data into memory elements 112 in memory devices 200 .
- Individual memory devices 200 or groups of memory devices 200 can be addressed using appropriate sets of bit line electrodes 102 and word line electrodes 118 .
- bit line electrodes 102 are disposed above memory elements 112 and word line electrodes 118 are disposed below memory elements 112 .
- bit line electrodes may be disposed below memory elements 112 and word line electrodes may be disposed above memory elements 112 .
- FIG. 2A is a schematic diagram of a memory device 200 configured in accordance with an embodiment of the invention.
- Memory device 200 includes memory element 112 and in some embodiments current steering device 216 , which are both disposed between bit line electrodes 102 and word line electrodes 118 .
- current steering device 216 comprises an intervening electrical component, such as a p-n junction diode, p-i-n diode, transistor, or other similar device that is disposed between bit line electrode 102 and memory element 112 , or between word line electrode 118 and memory element 112 .
- current steering device 216 may include two or more layers of semiconductor material, such as two or more doped silicon layers, that are configured to allow or inhibit the current flow in different directions through the memory element 112 .
- read and write circuitry 150 is coupled to memory device 200 via bit line electrodes 102 and word line electrodes 118 as shown. Read and write circuitry 150 is configured to both sense the resistance state and set the resistance state of memory device 200 .
- FIG. 2B schematically illustrates memory device 200 configured to allow current to flow through memory device 200 in a forward direction (“I + ”), according to embodiments of the invention.
- I + forward direction
- FIG. 2B schematically illustrates memory device 200 configured to allow current to flow through memory device 200 in a forward direction (“I + ”), according to embodiments of the invention.
- current steering device 216 due to the design of current steering device 216 , a reduced current can also flow in the opposing direction through the device by the application of a reverse bias to the bit line electrodes 102 and word line electrodes 118 .
- read and write circuitry 150 applies a read voltage V READ , e.g., +0.5 volts (V), across resistive switching memory element 112 using an appropriately selected bit line electrode 102 and word line electrode 118 in memory array 100 .
- V read voltage
- Read and write circuitry 150 then senses the resultant current passing through memory device 200 .
- a relatively high “on” current value (I ON ) indicates that memory element 112 is in its low resistance state
- a relatively low “off” current value (I OFF ) indicates that memory element 112 is in its high resistance state.
- the particular memory element 112 that is addressed in this way may be in either a high resistance state (HRS) or a low resistance state (LRS).
- the resistance of memory element 112 therefore determines what digital data is being stored therein. For example, if memory element 112 is in the high resistance state, memory element 112 may be said to contain a logical zero (i.e., a “0” bit). If, on the other hand, memory element 112 is in the low resistance state, memory element 112 may be said to contain a logical one (i.e., a “1” bit).
- FIG. 3 sets forth a log-log plot 251 of current (I) versus voltage (V) of a bipolar switching curve 252 for one embodiment of memory element 112 , and thus illustrates typical threshold values used to set and reset the contents of memory element 112 .
- memory element 112 may initially be in a high resistance state (e.g., storing a logical “zero”). To store a logical “one” in memory element 112 , memory element 112 is placed into its low-resistance state. This may be accomplished by using read and write circuitry 150 to apply a set voltage V SET (e.g., ⁇ 2 V to ⁇ 4 V) across bit line electrodes 102 and word line electrodes 118 . In one embodiment, applying a negative V SET voltage to memory element 112 causes memory element 112 to switch to its low resistance state. In this region, the memory element 112 is changed so that, following removal of the set voltage V SET , memory element 112 is characterized by a low resistance state.
- V SET set voltage
- V SET negative V SET voltage
- the memory element can once again be placed in its high resistance state by applying a positive reset voltage V RESET (e.g., +2 V to +5 V) to memory element 112 .
- V RESET positive reset voltage
- memory element 112 enters its high resistance state.
- reset voltage V RESET is removed from memory element 112
- memory element 112 will once again be characterized by high resistance when read voltage V READ is applied. While the discussion of the memory element 112 herein primarily provides bipolar switching examples, some embodiments of the memory elements 112 may use unipolar switching, where the set and reset voltages have the same polarity, without deviating from the scope of the invention described herein.
- the change in the resistive state of the memory element 112 may be “trap-mediated,” i.e., due to the redistribution or filling of traps or defects in a variable resistance layer of memory element 112 when memory device 200 is reverse biased.
- the defects or traps which are commonly believed to be oxygen vacancies, are formed during the deposition and/or post-processing of the variable resistance layer. For example, oxygen vacancies are likely created by a non-stoichiometric material composition of a host oxide material in the variable resistance layer.
- Embodiments of a variable resistance layer 206 are described below in conjunction with FIG. 4 .
- forming voltage V FORM is between about 1 and about 5 times greater than the V RESET or V SET voltage.
- the forming voltage is between about 1.4 and about 2.5 times greater than the V RESET or V SET voltage. In one example, the forming voltage is between about 3 and about 7 volts. However, it is noted that in some cases it is desirable to form memory element 112 so that the application of a forming voltage is not required at all to assure that the device will perform as desired throughout its life.
- FIG. 4 is a schematic cross-sectional view of memory device 200 that has one or more integrated oxygen isolation structures and is formed from a series of deposited layers, according to embodiments of the invention.
- memory device 200 is formed over, or integrated with and disposed over, portions of a surface of a substrate 201 (e.g., a silicon substrate or an SOI substrate).
- substrate 201 e.g., a silicon substrate or an SOI substrate.
- relative directional terms used herein with regard to embodiments of the invention are for purposes of description only, and do not limit the scope of the invention. Specifically, directional terms such as “over,” “above,” “under,” and the like are used under the assumption that substrate 201 on which embodiments are formed is a “bottom” element and is therefore “under” elements of the invention formed thereon.
- memory device 200 comprises a memory element 112 disposed between a bit line electrode 102 and a word line electrode 118 and surrounded by an electrically insulating material 410 .
- Memory device 200 further includes a bottom oxygen isolation layer 401 and a top oxygen isolation layer 402 positioned below and above memory element 112 as shown.
- Memory element 112 is a nonvolatile resistive memory element that includes variable resistance layer 206 positioned between bottom electrode 108 and top electrode 106 .
- Variable resistance layer 206 comprises a bistable dielectric material that can be switched between two or more stable resistive states, thereby acting as the switching layer for memory element 112 .
- variable resistance layer 206 is very thin, e.g., on the order of 15 to 30 ⁇ .
- a variety of different materials may be suitable for use as variable resistance layer 206 , including various oxides, nitrides, and all of the transition metals, i.e., hafnium (Hf), zirconium (Zr), titanium (Ti), tantalum (Ta), and the like.
- a material having a high bandgap energy e.g., greater than 4 electron volts (eV)
- high band gap variable resistance materials improve data retention and reduce the leakage current of memory element 112 .
- the amount of trapped charge in a variable resistance layer material with a high bandgap will be less than the amount of trapped charge in a variable resistance layer material with a lower band gap material.
- the high band gap materials create a large barrier height that trapped charge carriers must cross during the read, set and reset operations.
- variable resistance layer 206 examples include hafnium oxide (Hf x O y ), tantalum oxide (Ta x O y ), aluminum oxide (Al x O y ), lanthanum oxide (La x O y ), yttrium oxide (Y x O y ), dysprosium oxide (Dy x O y ), ytterbium oxide (Yb x O y ) and zirconium oxide (Zr x O y ).
- hafnium oxide Hf x O y
- Ta x O y tantalum oxide
- Al x O y aluminum oxide
- La x O y lanthanum oxide
- Y x O y yttrium oxide
- Dy x O y dysprosium oxide
- Yb x O y ytterbium oxide
- Zr x O y zirconium oxide
- variable resistance layer 206 has a thickness of between about 10 and about 100 ⁇ .
- Bottom electrode 108 and top electrode 106 are formed from conductive materials that have a desirable work function tailored to the bandgap of the material making up variable resistance layer 206 .
- bottom electrode 108 and top electrode 106 are formed from different materials, so that bottom electrode 108 and top electrode 106 have a work function that differs by a desired value, e.g., 0.1 eV, 0.5 eV, 1.0 eV, etc.
- top electrode 106 may be comprised of TiN, which has a work function of 4.5-4.6 eV
- bottom electrode 108 may be comprised of n-type polysilicon, which has a work function of approximately 4.1-4.15 eV.
- Electrode materials suitable for use in bottom electrode 108 and/or top electrode 106 include p-type polysilicon (4.9-5.3 eV), n-type polysilicon, transition metals, transition metal alloys, transition metal nitrides, transition metal carbides, tungsten (4.5-4.6 eV), tantalum nitride (4.7-4.8 eV), molybdenum nitride (4.0-5.0 eV), iridium (4.6-5.3 eV), and ruthenium ( ⁇ 4.7 eV).
- Other potential electrode materials include a titanium/aluminum alloys (4.1-4.3 eV), nickel ( ⁇ 5.0 eV), tungsten nitride ( ⁇ 4.3-5.0 eV), aluminum (4.2-4.3 eV), copper or silicon-doped aluminum (4.1-4.4 eV), copper ( ⁇ 4.5 eV), hafnium carbide (4.8-4.9 eV), hafnium nitride (4.7-4.8 eV), niobium nitride ( ⁇ 4.95 eV), tantalum carbide (approximately 5.1 eV), tantalum silicon nitride ( ⁇ 4.4 eV), titanium (4.1-4.4 eV), vanadium carbide ( ⁇ 5.15 eV), vanadium nitride ( ⁇ 5.15 eV), and zirconium nitride ( ⁇ 4.6 eV).
- a titanium/aluminum alloys 4.1-4.3 eV
- nickel ⁇ 5.0 eV
- top electrode 106 is a metal, metal alloy, metal nitride or metal carbide formed from an element selected from a group of materials consisting of titanium (Ti), tungsten (W), tantalum (Ta), cobalt (Co), molybdenum (Mo), nickel (Ni), vanadium (V), hafnium (Hf) aluminum (Al), copper (Cu), platinum (Pt), palladium (Pd), iridium (Ir), ruthenium (Ru), and combinations thereof.
- top electrode 106 comprises a metal alloy selected from the group of a titanium/aluminum alloy (Ti x Al y ), or a silicon-doped aluminum (AlSi).
- Bit line electrode 102 and word line electrode 118 are formed from conductive materials in order to couple memory devices 200 in memory array 100 to couple read and write circuitry 150 (shown in FIG. 2A ).
- Conductive materials suitable for use in bit line electrode 102 and word line electrode 118 include those listed above for bottom electrode 108 and top electrode 106 , although the work function of said materials is generally not a consideration.
- word line electrode 118 and bottom electrode 108 may be formed from the same material and at the same time.
- Bottom oxygen isolation layer 401 and top oxygen isolation layer 402 each comprise an oxygen barrier layer 501 , a sacrificial layer 502 , or a combination of both, according to embodiments of the invention.
- memory device 200 may be configured with bottom oxygen isolation layer 401 and without top oxygen isolation layer 402 , and in other embodiments, memory device 200 may be configured with top oxygen isolation layer 402 and without bottom oxygen isolation layer 401 .
- Oxygen barrier layer 501 is a material with a structure free of grain boundaries or other defects that can act as leakage paths for mobile oxygen and other unwanted ions into the nonvolatile memory element. Oxygen barrier layer 501 provides a physical barrier to the migration of mobile oxygen ions into memory element 112 .
- Sacrificial layer 502 comprises a material that is more reactive with oxygen than the materials that make up variable resistance layer 206 or memory element 112 , thereby acting as a reactive barrier to the migration of mobile oxygen ions into memory element 112 .
- oxygen barrier layer 501 and sacrificial layer 502 can significantly reduce migration of mobile oxygen ions into memory element 112 during fabrication and/or operation of memory device 200 .
- a number of device integration processes take place after the formation of memory element 112 that expose the partially formed memory device 200 to oxygen, either directly or indirectly.
- processes such as oxide formation and anneal inherently involve exposing partially formed devices to significant concentrations of oxygen, while low-vacuum processes and processes that include water vapor, such as atomic layer deposition (ALD), also subject partially formed memory devices 200 to oxygen exposure.
- Most materials used to form memory device 200 include trace amounts of oxygen—even films deposited using high-vacuum processes.
- trace oxygen present in the thin film structures making up memory device 200 can migrate over time into memory element 112 .
- there are many unavoidable sources of oxygen during both fabrication and operation of memory device 200 that facilitate migration of mobile oxygen ions into memory element 112 .
- the migration of mobile oxygen ions into memory element 112 reduces the performance and longevity of memory device 200 .
- Variable resistance layer 206 in memory element 112 is highly sensitive to oxygen migration during fabrication and/or operation, since the migration of even a very small number of mobile oxygen ions therein can significantly alter the performance memory element 112 . Specifically, both the endurance and the reliability of memory element 112 can be reduced by oxygen migration into variable resistance layer 206 , where endurance is the number of read-write cycles that can be performed by memory element 112 , and reliability is the duration that memory element 112 can retain data.
- an ideal oxygen barrier layer comprises a material free of pin holes, grain boundaries between crystals, dislocation lines within crystals, or any other features that can facilitate the introduction of oxygen or other unwanted mobile ions into memory element 112 .
- any oxygen barrier layer 501 used therein it is desirable for any oxygen barrier layer 501 used therein to be electrically conductive.
- the material and thickness of oxygen barrier layer 501 are selected so that resistance added to memory device 200 by oxygen barrier layer 501 is substantially less than the resistance of variable resistance layer 206 when in the “on” state, i.e., when variable resistance layer 206 is set to low resistance. In one embodiment, the material and thickness of oxygen barrier layer 501 is selected to have no more than about 10% of the resistance of variable resistance layer 206 in the “on” state, so that performance of memory device 200 is not impaired.
- oxygen barrier layer 501 comprises a material having a substantially amorphous structure.
- the interface between oxygen barrier layer 501 and adjacent structures in memory device 200 e.g., bit line electrode 102 , top electrode 106 , bottom electrode 108 , or word line electrode 118 ) is free of grain boundaries. In this way, no migration pathways are available for oxygen or other unwanted ions to enter memory cell 112 from other regions of memory device 200 , and oxygen barrier layer 501 is impermeable to mobile oxygen ions.
- the formation of memory cell 200 generally includes one or more high temperature processes, such as rapid thermal anneal (RTA), it is desirable for the amorphous structure of oxygen barrier layer 501 to withstand temperatures of at least 600 ° C.
- RTA rapid thermal anneal
- Suitable materials for oxygen barrier layer 501 when formed as part of bottom oxygen-isolation layer 401 and/or top oxygen-isolation layer 402 include amorphous silicon and refractory metal silicon carbides, such as Ta x Si y C x , W x Si y C x , and Ta—W—Si—C alloys.
- amorphous as used herein to describe a material structure, is distinguished from materials having a paracrystalline structure, e.g., micro-crystalline silicon, which are materials that are more ordered than a fully amorphous material and less ordered than a fully crystalline material.
- a fully amorphous material is substantially free of the grain boundaries that provide pathways for mobile ions, whereas materials having a paracrystalline structure generally include some crystalline structures, the grain boundaries of which can provide pathways for mobile ions.
- sacrificial layer 502 used in bottom oxygen isolation layer 401 and/or top oxygen isolation layer 402 is a material having a higher reactivity to oxygen than variable resistance layer 206 and other layers making up memory element 112 .
- Sacrificial layer 502 may be formed as a separate layer between bit line electrode 102 and top electrode 106 , or between bottom electrode 108 and word line electrode 118 .
- an amorphous semiconductor material may be used for sacrificial layer 502 , such as amorphous silicon.
- sacrificial layer 502 reacts with oxygen, sacrificial layer 502 is converted to an electrically insulative material and therefore has increased resistance. Consequently, in such embodiments, it is desirable for the thickness of sacrificial layer 502 to be minimized, for example on the order of about 20 ⁇ or less. In this way, even if sacrificial layer 502 is largely converted to an insulating material through reaction with oxygen, sacrificial layer 502 is thin enough to be broken down during the forming process, thereby providing conductive paths to variable resistance layer 206 so that operation of memory device 200 is not impaired.
- the maximum thickness of sacrificial layer 502 can be selected based on the forming voltage that will be applied to variable resistance layer 206 . For typical forming voltages, e.g. 7 V or less, the thickness of sacrificial layer 502 is selected to be 3 to 7 ⁇ or less.
- a relatively thick sacrificial layer is initially formed on top electrode 106 as part of top oxygen isolation layer 402 , and is then largely or entirely removed prior to the formation of bit line electrode 102 . Such an embodiment is described in greater detail below in conjunction with FIG. 5B .
- FIGS. 5A and 5B are schematic cross-sectional views of various embodiments of top oxygen isolation layer 402 in memory device 200 , as indicated in FIG. 4 .
- FIGS. 5A and 5B are schematic cross-sectional views of various embodiments of top oxygen isolation layer 402 in memory device 200 , as indicated in FIG. 4 .
- One of skill in the art will appreciate that the embodiments of top oxygen isolation layer 402 described in conjunction with FIGS. 5A and 5B can be readily applied to bottom oxygen isolation layer 401 as well without further recitation.
- top oxygen isolation layer 402 is disposed between top electrode 106 and top bit line electrode 102 and includes both oxygen barrier layer 501 and sacrificial layer 502 .
- the thickness of oxygen barrier layer 501 can be selected based on the permeability thereof with respect to oxygen and other unwanted mobile ions. It is noted that because oxygen barrier layer 501 is electrically conductive, the thickness 511 of oxygen barrier layer 501 can be configured to be relatively thick without impairing the operation or performance of memory device 200 . In this way, oxygen barrier layer 501 can prevent most or all migration of oxygen ions into variable resistance layer 206 . In one embodiment, oxygen barrier layer 501 has a thickness 511 of between 5 nm and 50 nm.
- sacrificial layer 502 is relatively thin layer, so that unwanted resistance is not introduced into memory device 200 when the sacrificial layer 502 is partially or wholly converted to an insulative material.
- the thickness 512 of sacrificial layer 502 can be selected based on the maximum allowable resistance of sacrificial layer 502 if completely converted to an insulating material, such as silicon dioxide (SiO 2 ). In order to minimize unwanted resistance caused by the conversion of sacrificial layer 502 into such an insulating material, and to ensure that a typical forming voltage can break down such an insulating material, in some embodiments thickness 512 may be selected to be no greater than about 3 to 7 ⁇ .
- oxygen barrier layer 501 is formed on top of sacrificial layer 502 , as shown FIG. 5A .
- oxygen barrier layer 501 is configured to act as a physical barrier for the majority of oxygen ions migrating toward variable resistance layer 206 , and sacrificial layer 502 is positioned to react with any oxygen ions that penetrate oxygen barrier layer 501 . Because sacrificial layer 502 is relatively thin and has the capacity to react with only a limited number of oxygen ions, an advantage of this embodiment is that sacrificial layer 502 is reserved for stopping the small number of oxygen ions that have penetrated oxygen barrier layer 501 .
- oxygen barrier layer 501 is formed on top of sacrificial layer 502 , however, other configurations of oxygen barrier layer 501 and sacrificial layer 502 are also contemplated by embodiments of the invention.
- oxygen barrier layer 501 is first formed on top electrode 106 , and sacrificial layer 502 is then formed on oxygen barrier layer 501 .
- top oxygen isolation layer 402 includes sacrificial layer 502 but does not include oxygen barrier layer 501 .
- top isolation layer 402 includes oxygen barrier layer 501 but does not include sacrificial layer 502 .
- sacrificial layer 502 is deposited with an initial thickness that is significantly greater than thickness 512 , thereby providing enhanced capacity for protecting variable resistance layer 206 from oxygen during fabrication of memory device 200 .
- the initial thickness 513 of sacrificial layer 502 can be selected based on the estimated quantity of oxygen ions that will migrate into sacrificial layer 502 during fabrication of memory device 200 . Such an estimate may include the mean free path traveled by oxygen ions during fabrication of memory device 200 and the concentration of mobile oxygen ions in the bulk material of memory device 200 .
- sacrificial layer 502 remains in place while oxygen-intensive processes are performed as part of fabricating memory device 200 (e.g., reactive etch processes and processes for the formation of electrically insulating material 410 ). Then, prior to the formation of bit line electrode 102 , most or all of sacrificial layer 502 is removed, so that a thick, electrically insulative layer is not present between top electrode 106 and bit line electrode 102 that can impair operation of memory device 200 . In one embodiment, a layer of thickness 512 may be left in place after such removal to protect variable resistance layer 206 during operation.
- top oxygen isolation layer 402 includes sacrificial layer 502 embedded inside top electrode 106 .
- sacrificial layer 502 may be very thin for the reasons detailed above, for example from 3 to 7 ⁇ .
- top oxygen isolation layer 402 may further include oxygen barrier layer 501 formed between top electrode 106 and bit line electrode 102 , thereby providing further protection of variable resistance layer 206 from oxygen ion migration.
- FIG. 6 is a schematic cross-sectional view of memory device 200 formed with oxygen isolation layers 610 formed on sidewalls 620 of memory element 112 , according to an embodiment of the invention.
- the embodiment of memory device 200 illustrated in FIG. 6 is substantially similar in organization and operation to the embodiment illustrated in FIG. 4 , with the addition of oxygen isolation layers 610 formed on sidewalls 620 of memory element 112 .
- Oxygen isolation layers 610 are configured to further isolate memory cell 112 from oxygen migration without affecting the operation of memory device 200 .
- oxygen isolation layers 610 comprise materials that are not oxygen-containing and do not form a significant current path around memory element 112 , i.e., from bit line electrode 102 to word line electrode 118 .
- oxygen isolation layers 610 have significantly higher resistance relative to memory element 112 , and consequently are formed from different materials than bottom oxygen isolation layer 401 and top oxygen isolation layer 402 .
- oxygen isolation layers 610 can have no resistive switching properties.
- Oxygen isolation layers 610 may include an oxygen barrier layer, a sacrificial layer, or a combination of both.
- Suitable oxygen barrier layers for oxygen isolation layers 610 have an amorphous structure after high-temperature processes and have relatively high electrical resistivity. In addition, suitable oxygen barrier layers for oxygen isolation layers have higher oxygen affinity than the materials in memory cell 112 .
- oxygen isolation layer 610 includes silicon nitride (Si 3 N 4 ) or tetraethyl orthosilicate (TEOS, or Si(OC 2 H 5 ) 4 ).
- TEOS tetraethyl orthosilicate
- Suitable sacrificial layer materials for oxygen isolation layers 610 include materials that is more reactive with oxygen than the materials in memory cell 112 . Ideally, the sacrificial layer in oxygen isolation layers 610 also maintains an amorphous structure after high-temperature processes.
- oxygen isolation layers 610 each include a layer of amorphous silicon, which is highly reactive with oxygen and has an amorphous structure.
- an oxygen barrier layer is positioned between memory element 112 and the sacrificial layer.
- FIG. 7 sets forth a flowchart of method steps in a process sequence 700 for forming memory device 200 , according to embodiments of the invention. Although the method steps are described in conjunction with memory device 200 in FIG. 6 , persons skilled in the art will understand that formation of other resistive switching memory devices using process sequence 700 is within the scope of the invention.
- word line electrode 118 is a highly doped polysilicon layer that is formed on substrate 201 using a conventional CVD or ALD type polysilicon deposition technique, and is between about 50 ⁇ and about 5000 ⁇ thick.
- bottom oxygen isolation layer 401 is formed on word line electrode 118 using a deposition process or processes appropriate to the configuration of bottom oxygen isolation layer 401 .
- a deposition process or processes appropriate to the configuration of bottom oxygen isolation layer 401 For example, in embodiments in which bottom oxygen isolation layer 401 includes an amorphous silicon layer as a sacrificial layer, a chemical vapor deposition (CVD) process can be used.
- a refractory metal silicon carbide as an oxygen barrier layer, such as Ta x Si y C x , a DC magnetron co-sputtering process can be used.
- a Ta 40 W 40 Si 10 C 10 thin film can be deposited using three-target dc-magnetron co-sputtering with tantalum, tungsten (W) and silicon carbide (SiC) targets.
- a sacrificial layer may be formed on top of oxygen barrier layer 501 to be positioned closer to variable resistance layer 206 .
- bottom electrode 108 is formed on bottom oxygen isolation layer 401 using a deposition process or processes appropriate to the materials included in bottom electrode 108 .
- a deposition process or processes appropriate to the materials included in bottom electrode 108 For example, when bottom electrode 108 is a highly doped polysilicon layer, a conventional CVD or ALD type polysilicon deposition technique may be used to form bottom electrode 108 with a thickness that is between about 50 and about 5000 ⁇ .
- variable resistance layer 206 is deposited on the bottom electrode 108 using an appropriate deposition process.
- variable resistance layer 206 comprises a metal oxide layer, such as Hf x O y , Ta x O y , Al x O y , La x O y , Y x O y , Dy x O y , Yb x O y and/or Zr x O y , formed to a thickness of between about 20 and about 100 ⁇
- variable resistance layer 206 can be deposited using an ALD process well-known in the art.
- variable resistance layer 206 can be deposited using a CVD process, such as low-pressure CVD (LPCVD) or plasma-enhanced (PECVD), physical vapor deposition (PVD) processes, liquid deposition processes, or epitaxy processes.
- LPCVD low-pressure CVD
- PECVD plasma-enhanced
- PVD physical vapor deposition
- an ALD process using tetrakis(dimethylamino)hafnium (TDMAH) and an oxygen-containing precursor at a temperature of about 250° C. is used to form a 50 ⁇ thick, hafnium oxide (Hf x O y ) containing variable resistance layer 206 .
- top electrode 106 is formed on variable resistance layer 206 using a deposition process or processes appropriate to the materials included in top electrode 106 , including PVD, CVD, ALD or other similar processes.
- a PVD process is used to form electrode 102 that comprises titanium nitride (TiN) and is between about 100 ⁇ and 1000 ⁇ thick.
- top oxygen isolation layer 402 is formed on top electrode 106 using a deposition process or processes appropriate to the configuration of top oxygen isolation layer 402 . Similar processes described above in step 702 for bottom oxygen isolation layer 401 may be used in step 706 .
- steps 701 - 706 form blanket layers of different materials on substrate 201 .
- step 707 the film stack deposited in steps 701 - 706 is patterned and etched using standard techniques known in the art to form the individual memory devices 200 of memory array 100 .
- oxygen isolation layers 610 are formed on sidewalls 620 of memory element 112 using a deposition process or processes appropriate to the configuration of top oxygen isolation layer 402 .
- a conformal process is used to deposit a silicon nitride (Si 3 N 4 ) layer as an oxygen barrier layer.
- a CVD process can be used to provide adequate step coverage of sidewalls 620 .
- a sacrificial layer is then deposited on oxygen barrier layer 501 , such as an amorphous silicon layer.
- step 709 electrically insulating material 410 is deposited as shown to passivate and protect the memory devices 200 of memory array 100 .
- a CVD oxide deposition process is used. It is noted that the presence of bottom oxygen isolation layer 401 , top oxygen isolation layer 402 , and oxygen isolation layers 610 helps prevent oxygen migration into memory cell 112 during step 709 .
- a suitable material removal process is used to largely or completely remove sacrificial layer 502 .
- a wet oxide etch process, a dry etch process, or a chemical-mechanical polishing (CMP) process may be used to perform step 710 .
- the thickness of the remaining portion of sacrificial layer 502 is between about 3 to 7 ⁇ . In other embodiments, sacrificial layer 502 is entirely removed.
- bit line electrode 102 is deposited on electrically insulating material 410 and top oxygen isolation layer 402 as shown.
- bit line electrode 102 is deposited as a blanket film with an appropriate deposition process, and is then patterned and etched to form bit line electrodes 102 of memory array 100 .
- bit line electrode 102 includes a metallic conductor, and is deposited using any technically feasible metal deposition process known in the art.
- embodiments of the invention provide a nonvolatile resistive memory element having one or more novel oxygen isolation structures and methods of forming the same.
- Use of the oxygen isolation structures advantageously improves performance and longevity of the nonvolatile resistive memory element by preserving defects in the resistive switching material, such as oxygen vacancies, that are responsible for the switching capability of the resistive switching material.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
A nonvolatile resistive memory element includes one or more novel oxygen isolation structures that protect the resistive switching material of the memory element from oxygen migration. One such oxygen isolation structure comprises an oxygen barrier layer that isolates the resistive switching material from other portions of the resistive memory device during fabrication and/or operation of the memory device. Another such oxygen isolation structure comprises a sacrificial layer that reacts with unwanted oxygen migrating toward the resistive switching material during fabrication and/or operation of the memory device.
Description
- This is a continuation of U.S. patent application Ser. No. 13/408,103, filed on Feb. 29, 2012, which is herein incorporated by reference in its entirety for all purposes.
- 1. Field of the Invention
- This invention relates to nonvolatile resistive memory elements, and more particularly, to a nonvolatile resistive memory element with an integrated oxygen isolation structure and methods for forming the same.
- 2. Description of the Related Art
- Nonvolatile memory elements are used in devices requiring persistent data storage, such as digital cameras and digital music players, as well as in computer systems. Electrically-erasable programmable read only memory (EPROM) and NAND flash are nonvolatile memory technologies currently in use. However, as device dimensions shrink, scaling issues pose challenges for traditional nonvolatile memory technology. This has led to the investigation of alternative nonvolatile memory technologies, including resistive switching nonvolatile memory.
- Resistive switching nonvolatile memory is formed using memory elements that are bistable, i.e., having two stable states with different resistances. A bistable memory element can be placed in a high resistance state or a low resistance state by application of suitable voltages or currents. Voltage pulses are typically used to switch the bistable memory element from one resistance state to the other. Subsequently, nondestructive read operations can be performed on the memory element to ascertain the value of a data bit that is stored therein.
- In the materials that make up a bistable memory element, oxygen vacancies and the movement thereof are believed to be the primary mechanism of the “on” and “off” states of resistive switching memory devices. Furthermore, it is known that such oxygen vacancies can be eliminated or otherwise affected by the migration of even a small number of mobile oxygen ions into the memory element, either during fabrication or operation of the memory device.
- As resistive switching memory device sizes shrink, it is important to reduce the required currents and voltages that are necessary to reliably set, reset and/or determine the desired “on” and “off” states of the device, thereby minimizing power consumption of the device, resistive heating of the device, and cross-talk between adjacent devices. In addition, reliable retention of data by such devices for longer periods is highly desirable.
- Because a bistable memory element formed with relatively few oxygen vacancies formed therein can result in lower operating voltages and currents, it is generally desirable to minimize the number of oxygen vacancies formed in bistable memory elements. However, such bistable memory elements are more sensitive to oxygen migration during fabrication and/or operation, since the migration of even a very small number of mobile oxygen ions into such memory elements can significantly alter the performance and longevity of the memory element. Thus, there is a trade-off in the design of resistive bistable memory elements between those configurations having lower operating voltages and currents, which benefit from having fewer oxygen vacancies, and those configurations having higher endurance and reliability, which benefit from having more oxygen vacancies.
- In light of the above, there is a need in the art for nonvolatile resistive switching memory devices having reduced current and voltage requirements that are less sensitive to oxygen migration.
- One or more embodiments of the present invention set forth a nonvolatile resistive memory element having one or more novel oxygen isolation structures and methods of forming the same.
- According to one embodiment of the present invention, a nonvolatile memory element comprises a first layer operable as an electrode layer and formed above a substrate, a second layer operable as a variable resistance layer and disposed between the first layer and a third layer operable as an electrode layer, and a fourth layer that is operable as an oxygen barrier layer disposed adjacent to one or more of the first layer, the second layer, and the third layer, wherein the fourth layer comprises a material having an amorphous structure.
- According to another embodiment of the present invention, a nonvolatile memory element comprises a first layer operable as an electrode layer and formed above a substrate, a second layer operable as a variable resistance layer and disposed between the first layer and a third layer operable as an electrode layer, and a fourth layer that is operable as an oxygen barrier layer and is disposed on a sidewall of the second layer, wherein the fourth layer comprises a material having an amorphous structure.
- According to another embodiment of the present invention, a nonvolatile memory element comprises a first layer operable as an electrode layer and formed above a substrate, a second layer operable as a variable resistance layer and disposed between the first layer and a third layer operable as an electrode layer, and a fourth layer that is operable as a sacrificial layer, disposed adjacent to one or more of the first layer, the second layer, and the third layer, wherein the fourth layer comprises a material that is more reactive with oxygen than a material in the second layer.
- So that the manner in which the above recited features of embodiments of the invention can be understood in detail, a more particular description of embodiments of the invention, briefly summarized above, may be had by reference to the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
-
FIG. 1 is a perspective view of a memory array of memory devices, configured according to embodiments of the invention. -
FIG. 2A is a schematic cross-sectional view of a memory device, configured in accordance with an embodiment of the invention. -
FIG. 2B schematically illustrates a memory device configured to allow current to flow through the memory device in a forward direction, according to embodiments of the invention. -
FIG. 3 sets forth a log-log plot of current versus voltage of a bipolar switching curve for one embodiment of a memory element, according to an embodiment of the invention. -
FIG. 4 is a schematic cross-sectional view of a memory device that has one or more integrated oxygen isolation structures and is formed from a series of deposited layers, according to an embodiment of the invention. -
FIGS. 5A and 5B are schematic cross-sectional views of various embodiments of a top oxygen isolation layer in a memory device, as indicated inFIG. 4 . -
FIG. 6 is a schematic cross-sectional view of a memory device formed with oxygen barrier layers formed on sidewalls of a memory element, according to an embodiment of the invention. -
FIG. 7 sets forth a flowchart of method steps in a process sequence for forming a memory device, according to embodiments of the invention. - For clarity, identical reference numbers have been used, where applicable, to designate identical elements that are common between figures. It is contemplated that features of one embodiment may be incorporated in other embodiments without further recitation.
- Embodiments of the invention set forth a nonvolatile resistive memory device having one or more novel oxygen isolation structures and methods of forming the same. One such oxygen isolation structure may be an oxygen barrier layer that isolates the resistive switching material of the nonvolatile memory element from other portions of the resistive memory device during fabrication and/or operation of the memory device. Specifically, the oxygen barrier layer encapsulates the regions of one or more of the memory elements to prevent the depletion of oxygen vacancies from such element. Another such oxygen isolation structure may be a sacrificial layer that reacts with unwanted oxygen migrating toward a memory element of the resistive memory device during fabrication and/or operation of the memory device. The sacrificial layer comprises a material that reacts with oxygen present in the memory element in order to maintain or increase the oxygen vacancies in such element. Use of the oxygen barrier layer and/or sacrificial layer improves performance and longevity of the nonvolatile resistive memory element by preserving the defects in the resistive switching material, such as oxygen vacancies, that are responsible for the switching capability of the resistive switching material.
-
FIG. 1 is a perspective view of amemory array 100 ofmemory devices 200, configured according to embodiments of the invention.Memory array 100 may be part of a larger memory device or other integrated circuit structure, such as a system-on-a-chip type device.Memory array 100 may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, hand-held computers, and music players. For clarity,memory array 100 is illustrated as a single layer memory array structure. However, memory arrays such asmemory array 100 can also be stacked in a vertical fashion to make multilayer memory array structures. - Each of
memory devices 200 comprises a nonvolatile resistive switching memory device, such as a resistive random access memory (ReRAM) device. Memory device includes amemory element 112, one or more novel oxygen isolation structures, and in some embodiments a current steering device. Embodiments of oxygen isolation structures are described below in conjunction withFIGS. 4-6 , and embodiments of a current steering device are described below in conjunction withFIGS. 2A , 2B. As shown inFIG. 1 ,memory elements 112 inmemory devices 200 may be formed from one ormore material layers 114, which are described below in conjunction withFIG. 4 . - Read and write circuitry (not shown) is connected to
memory devices 200 usingbit line electrodes 102 and orthogonally positionedword line electrodes 118.Bit line electrodes 102 andword line electrodes 118 are sometimes referred to as “bit lines” and “word lines,” and are used to read and write data intomemory elements 112 inmemory devices 200.Individual memory devices 200 or groups ofmemory devices 200 can be addressed using appropriate sets ofbit line electrodes 102 andword line electrodes 118. In the embodiment illustrated inFIG. 1 ,bit line electrodes 102 are disposed abovememory elements 112 andword line electrodes 118 are disposed belowmemory elements 112. In other embodiments, bit line electrodes may be disposed belowmemory elements 112 and word line electrodes may be disposed abovememory elements 112. -
FIG. 2A is a schematic diagram of amemory device 200 configured in accordance with an embodiment of the invention.Memory device 200 includesmemory element 112 and in some embodimentscurrent steering device 216, which are both disposed betweenbit line electrodes 102 andword line electrodes 118. In one embodiment,current steering device 216 comprises an intervening electrical component, such as a p-n junction diode, p-i-n diode, transistor, or other similar device that is disposed betweenbit line electrode 102 andmemory element 112, or betweenword line electrode 118 andmemory element 112. In some embodiments,current steering device 216 may include two or more layers of semiconductor material, such as two or more doped silicon layers, that are configured to allow or inhibit the current flow in different directions through thememory element 112. In addition, read and writecircuitry 150 is coupled tomemory device 200 viabit line electrodes 102 andword line electrodes 118 as shown. Read and writecircuitry 150 is configured to both sense the resistance state and set the resistance state ofmemory device 200. -
FIG. 2B schematically illustratesmemory device 200 configured to allow current to flow throughmemory device 200 in a forward direction (“I+”), according to embodiments of the invention. However, due to the design ofcurrent steering device 216, a reduced current can also flow in the opposing direction through the device by the application of a reverse bias to thebit line electrodes 102 andword line electrodes 118. - During a read operation, read and write
circuitry 150 applies a read voltage VREAD, e.g., +0.5 volts (V), across resistiveswitching memory element 112 using an appropriately selectedbit line electrode 102 andword line electrode 118 inmemory array 100. Read and writecircuitry 150 then senses the resultant current passing throughmemory device 200. A relatively high “on” current value (ION) indicates thatmemory element 112 is in its low resistance state, and a relatively low “off” current value (IOFF) indicates thatmemory element 112 is in its high resistance state. Depending on its history, theparticular memory element 112 that is addressed in this way may be in either a high resistance state (HRS) or a low resistance state (LRS). The resistance ofmemory element 112 therefore determines what digital data is being stored therein. For example, ifmemory element 112 is in the high resistance state,memory element 112 may be said to contain a logical zero (i.e., a “0” bit). If, on the other hand,memory element 112 is in the low resistance state,memory element 112 may be said to contain a logical one (i.e., a “1” bit). - During a write operation, the resistive state of a
particular memory element 112 inmemory array 100 is changed by application of suitable write signals to an appropriate set ofbit line electrodes 102 andword line electrodes 118 by read and writecircuitry 150. In some embodiments, to affect such a change, bipolar switching is used, where opposite polarity set and reset voltages are used to alter the resistance of a selectedmemory element 112 between high and low resistance states.FIG. 3 sets forth a log-log plot 251 of current (I) versus voltage (V) of abipolar switching curve 252 for one embodiment ofmemory element 112, and thus illustrates typical threshold values used to set and reset the contents ofmemory element 112. For example,memory element 112 may initially be in a high resistance state (e.g., storing a logical “zero”). To store a logical “one” inmemory element 112,memory element 112 is placed into its low-resistance state. This may be accomplished by using read and writecircuitry 150 to apply a set voltage VSET (e.g., −2 V to −4 V) acrossbit line electrodes 102 andword line electrodes 118. In one embodiment, applying a negative VSET voltage tomemory element 112 causesmemory element 112 to switch to its low resistance state. In this region, thememory element 112 is changed so that, following removal of the set voltage VSET,memory element 112 is characterized by a low resistance state. Conversely, to store a logical “zero” inmemory element 112, the memory element can once again be placed in its high resistance state by applying a positive reset voltage VRESET (e.g., +2 V to +5 V) tomemory element 112. When read and writecircuitry 150 applies VRESET tomemory element 112,memory element 112 enters its high resistance state. When reset voltage VRESET is removed frommemory element 112,memory element 112 will once again be characterized by high resistance when read voltage VREAD is applied. While the discussion of thememory element 112 herein primarily provides bipolar switching examples, some embodiments of thememory elements 112 may use unipolar switching, where the set and reset voltages have the same polarity, without deviating from the scope of the invention described herein. - It is believed that the change in the resistive state of the
memory element 112 may be “trap-mediated,” i.e., due to the redistribution or filling of traps or defects in a variable resistance layer ofmemory element 112 whenmemory device 200 is reverse biased. The defects or traps, which are commonly believed to be oxygen vacancies, are formed during the deposition and/or post-processing of the variable resistance layer. For example, oxygen vacancies are likely created by a non-stoichiometric material composition of a host oxide material in the variable resistance layer. Embodiments of avariable resistance layer 206 are described below in conjunction withFIG. 4 . - In an effort to prepare the
memory element 112 for use, it is common to apply a forming voltage VFORM at least once acrossbit line electrodes 102 andword line electrodes 118 to “burn-in” eachmemory device 200 ofmemory array 100. It is believed that the application of forming voltage VFORM, which is typically significantly greater than the VRESET and VSET voltages, causes the defects that are formed withinvariable resistance layer 206 during the device fabrication process to move, align and/or collect within various regions of the layer, causingvariable resistance layer 206 to consistently and reliably switch between the “on” and “off” resistive states throughout the memory element's life. In one embodiment, forming voltage VFORM is between about 1 and about 5 times greater than the VRESET or VSET voltage. In one example, the forming voltage is between about 1.4 and about 2.5 times greater than the VRESET or VSET voltage. In one example, the forming voltage is between about 3 and about 7 volts. However, it is noted that in some cases it is desirable to formmemory element 112 so that the application of a forming voltage is not required at all to assure that the device will perform as desired throughout its life. -
FIG. 4 is a schematic cross-sectional view ofmemory device 200 that has one or more integrated oxygen isolation structures and is formed from a series of deposited layers, according to embodiments of the invention. In the embodiment illustrated inFIG. 4 ,memory device 200 is formed over, or integrated with and disposed over, portions of a surface of a substrate 201 (e.g., a silicon substrate or an SOI substrate). It is noted that relative directional terms used herein with regard to embodiments of the invention are for purposes of description only, and do not limit the scope of the invention. Specifically, directional terms such as “over,” “above,” “under,” and the like are used under the assumption thatsubstrate 201 on which embodiments are formed is a “bottom” element and is therefore “under” elements of the invention formed thereon. - In the embodiment illustrated in
FIG. 4 ,memory device 200 comprises amemory element 112 disposed between abit line electrode 102 and aword line electrode 118 and surrounded by an electrically insulatingmaterial 410.Memory device 200 further includes a bottomoxygen isolation layer 401 and a topoxygen isolation layer 402 positioned below and abovememory element 112 as shown.Memory element 112 is a nonvolatile resistive memory element that includesvariable resistance layer 206 positioned betweenbottom electrode 108 andtop electrode 106. -
Variable resistance layer 206 comprises a bistable dielectric material that can be switched between two or more stable resistive states, thereby acting as the switching layer formemory element 112. Typically,variable resistance layer 206 is very thin, e.g., on the order of 15 to 30 Å. A variety of different materials may be suitable for use asvariable resistance layer 206, including various oxides, nitrides, and all of the transition metals, i.e., hafnium (Hf), zirconium (Zr), titanium (Ti), tantalum (Ta), and the like. Generally, a material having a high bandgap energy, e.g., greater than 4 electron volts (eV), is desirable since high band gap variable resistance materials improve data retention and reduce the leakage current ofmemory element 112. Specifically, the amount of trapped charge in a variable resistance layer material with a high bandgap will be less than the amount of trapped charge in a variable resistance layer material with a lower band gap material. Also, the high band gap materials create a large barrier height that trapped charge carriers must cross during the read, set and reset operations. Examples of such high bandgap materials suitable for use invariable resistance layer 206 include hafnium oxide (HfxOy), tantalum oxide (TaxOy), aluminum oxide (AlxOy), lanthanum oxide (LaxOy), yttrium oxide (YxOy), dysprosium oxide (DyxOy), ytterbium oxide (YbxOy) and zirconium oxide (ZrxOy). Alternatively, lower bandgap metal oxide materials, such as titanium oxide (TiOx), nickel oxide (NiOx) or cerium oxide (CeOx), may be used advantageously for some configurations ofmemory device 200. In some cases, a semiconductive metal oxide (p-type or n-type) such as zinc oxides (ZnxOy), copper oxides (CuxOy), and their nonstoichiometric and doped variants can be used. In some embodiments,variable resistance layer 206 has a thickness of between about 10 and about 100 Å. -
Bottom electrode 108 andtop electrode 106 are formed from conductive materials that have a desirable work function tailored to the bandgap of the material making upvariable resistance layer 206. In some configurations,bottom electrode 108 andtop electrode 106 are formed from different materials, so thatbottom electrode 108 andtop electrode 106 have a work function that differs by a desired value, e.g., 0.1 eV, 0.5 eV, 1.0 eV, etc. For example, in one embodiment, in which a work function difference of about 0.3 eV is desired,top electrode 106 may be comprised of TiN, which has a work function of 4.5-4.6 eV, andbottom electrode 108 may be comprised of n-type polysilicon, which has a work function of approximately 4.1-4.15 eV. Many other electrode materials suitable for use inbottom electrode 108 and/ortop electrode 106 include p-type polysilicon (4.9-5.3 eV), n-type polysilicon, transition metals, transition metal alloys, transition metal nitrides, transition metal carbides, tungsten (4.5-4.6 eV), tantalum nitride (4.7-4.8 eV), molybdenum nitride (4.0-5.0 eV), iridium (4.6-5.3 eV), and ruthenium (˜4.7 eV). Other potential electrode materials include a titanium/aluminum alloys (4.1-4.3 eV), nickel (˜5.0 eV), tungsten nitride (˜4.3-5.0 eV), aluminum (4.2-4.3 eV), copper or silicon-doped aluminum (4.1-4.4 eV), copper (˜4.5 eV), hafnium carbide (4.8-4.9 eV), hafnium nitride (4.7-4.8 eV), niobium nitride (˜4.95 eV), tantalum carbide (approximately 5.1 eV), tantalum silicon nitride (˜4.4 eV), titanium (4.1-4.4 eV), vanadium carbide (˜5.15 eV), vanadium nitride (˜5.15 eV), and zirconium nitride (˜4.6 eV). In some embodiments,top electrode 106 is a metal, metal alloy, metal nitride or metal carbide formed from an element selected from a group of materials consisting of titanium (Ti), tungsten (W), tantalum (Ta), cobalt (Co), molybdenum (Mo), nickel (Ni), vanadium (V), hafnium (Hf) aluminum (Al), copper (Cu), platinum (Pt), palladium (Pd), iridium (Ir), ruthenium (Ru), and combinations thereof. In one embodiment,top electrode 106 comprises a metal alloy selected from the group of a titanium/aluminum alloy (TixAly), or a silicon-doped aluminum (AlSi). -
Bit line electrode 102 andword line electrode 118 are formed from conductive materials in order to couplememory devices 200 inmemory array 100 to couple read and write circuitry 150 (shown inFIG. 2A ). Conductive materials suitable for use inbit line electrode 102 andword line electrode 118 include those listed above forbottom electrode 108 andtop electrode 106, although the work function of said materials is generally not a consideration. In embodiments in which no bottomoxygen isolation layer 401 is formed,word line electrode 118 andbottom electrode 108 may be formed from the same material and at the same time. - Bottom
oxygen isolation layer 401 and topoxygen isolation layer 402 each comprise anoxygen barrier layer 501, asacrificial layer 502, or a combination of both, according to embodiments of the invention. In some embodiments,memory device 200 may be configured with bottomoxygen isolation layer 401 and without topoxygen isolation layer 402, and in other embodiments,memory device 200 may be configured with topoxygen isolation layer 402 and without bottomoxygen isolation layer 401. -
Oxygen barrier layer 501 is a material with a structure free of grain boundaries or other defects that can act as leakage paths for mobile oxygen and other unwanted ions into the nonvolatile memory element.Oxygen barrier layer 501 provides a physical barrier to the migration of mobile oxygen ions intomemory element 112.Sacrificial layer 502 comprises a material that is more reactive with oxygen than the materials that make upvariable resistance layer 206 ormemory element 112, thereby acting as a reactive barrier to the migration of mobile oxygen ions intomemory element 112. When used either separately or in combination in bottom oxygen-isolation layer 401 and top oxygen-isolation layer 402,oxygen barrier layer 501 andsacrificial layer 502 can significantly reduce migration of mobile oxygen ions intomemory element 112 during fabrication and/or operation ofmemory device 200. - During fabrication of
memory device 200, a number of device integration processes take place after the formation ofmemory element 112 that expose the partially formedmemory device 200 to oxygen, either directly or indirectly. For example, processes such as oxide formation and anneal inherently involve exposing partially formed devices to significant concentrations of oxygen, while low-vacuum processes and processes that include water vapor, such as atomic layer deposition (ALD), also subject partially formedmemory devices 200 to oxygen exposure. Most materials used to formmemory device 200 include trace amounts of oxygen—even films deposited using high-vacuum processes. In addition, during operation ofmemory device 200, trace oxygen present in the thin film structures making upmemory device 200 can migrate over time intomemory element 112. Thus, there are many unavoidable sources of oxygen during both fabrication and operation ofmemory device 200 that facilitate migration of mobile oxygen ions intomemory element 112. The migration of mobile oxygen ions intomemory element 112 reduces the performance and longevity ofmemory device 200. -
Variable resistance layer 206 inmemory element 112 is highly sensitive to oxygen migration during fabrication and/or operation, since the migration of even a very small number of mobile oxygen ions therein can significantly alter theperformance memory element 112. Specifically, both the endurance and the reliability ofmemory element 112 can be reduced by oxygen migration intovariable resistance layer 206, where endurance is the number of read-write cycles that can be performed bymemory element 112, and reliability is the duration thatmemory element 112 can retain data. - In light of the above, it is desirable for materials for
oxygen barrier layer 501 used in bottomoxygen isolation layer 401 and topoxygen isolation layer 402 to have a structure that is substantially free of migration paths for mobile oxygen and other unwanted ions. Specifically, an ideal oxygen barrier layer, according to embodiments of the invention, comprises a material free of pin holes, grain boundaries between crystals, dislocation lines within crystals, or any other features that can facilitate the introduction of oxygen or other unwanted mobile ions intomemory element 112. Furthermore, because bottomoxygen isolation layer 401 and topoxygen isolation layer 402 are included in the film stack making upmemory device 200, it is desirable for anyoxygen barrier layer 501 used therein to be electrically conductive. In some embodiments, the material and thickness ofoxygen barrier layer 501 are selected so that resistance added tomemory device 200 byoxygen barrier layer 501 is substantially less than the resistance ofvariable resistance layer 206 when in the “on” state, i.e., whenvariable resistance layer 206 is set to low resistance. In one embodiment, the material and thickness ofoxygen barrier layer 501 is selected to have no more than about 10% of the resistance ofvariable resistance layer 206 in the “on” state, so that performance ofmemory device 200 is not impaired. - In some embodiments,
oxygen barrier layer 501 comprises a material having a substantially amorphous structure. In such embodiments, the interface betweenoxygen barrier layer 501 and adjacent structures in memory device 200 (e.g.,bit line electrode 102,top electrode 106,bottom electrode 108, or word line electrode 118) is free of grain boundaries. In this way, no migration pathways are available for oxygen or other unwanted ions to entermemory cell 112 from other regions ofmemory device 200, andoxygen barrier layer 501 is impermeable to mobile oxygen ions. Because the formation ofmemory cell 200 generally includes one or more high temperature processes, such as rapid thermal anneal (RTA), it is desirable for the amorphous structure ofoxygen barrier layer 501 to withstand temperatures of at least 600 ° C. without changing to a crystal-containing phase. Suitable materials foroxygen barrier layer 501, when formed as part of bottom oxygen-isolation layer 401 and/or top oxygen-isolation layer 402 include amorphous silicon and refractory metal silicon carbides, such as TaxSiyCx, WxSiyCx, and Ta—W—Si—C alloys. It is noted that the term “amorphous,” as used herein to describe a material structure, is distinguished from materials having a paracrystalline structure, e.g., micro-crystalline silicon, which are materials that are more ordered than a fully amorphous material and less ordered than a fully crystalline material. A fully amorphous material is substantially free of the grain boundaries that provide pathways for mobile ions, whereas materials having a paracrystalline structure generally include some crystalline structures, the grain boundaries of which can provide pathways for mobile ions. - As noted above,
sacrificial layer 502 used in bottomoxygen isolation layer 401 and/or topoxygen isolation layer 402 is a material having a higher reactivity to oxygen thanvariable resistance layer 206 and other layers making upmemory element 112. In addition, it is desirable forsacrificial layer 502 to have an amorphous structure, even after high-temperature processing, to eliminate pathways for oxygen and other mobile ions intomemory cell 112.Sacrificial layer 502 may be formed as a separate layer betweenbit line electrode 102 andtop electrode 106, or betweenbottom electrode 108 andword line electrode 118. - In some embodiments, an amorphous semiconductor material may be used for
sacrificial layer 502, such as amorphous silicon. In such embodiments, assacrificial layer 502 reacts with oxygen,sacrificial layer 502 is converted to an electrically insulative material and therefore has increased resistance. Consequently, in such embodiments, it is desirable for the thickness ofsacrificial layer 502 to be minimized, for example on the order of about 20 Å or less. In this way, even ifsacrificial layer 502 is largely converted to an insulating material through reaction with oxygen,sacrificial layer 502 is thin enough to be broken down during the forming process, thereby providing conductive paths tovariable resistance layer 206 so that operation ofmemory device 200 is not impaired. In such embodiments, the maximum thickness ofsacrificial layer 502 can be selected based on the forming voltage that will be applied tovariable resistance layer 206. For typical forming voltages, e.g. 7 V or less, the thickness ofsacrificial layer 502 is selected to be 3 to 7 Å or less. In an alternative embodiment, a relatively thick sacrificial layer is initially formed ontop electrode 106 as part of topoxygen isolation layer 402, and is then largely or entirely removed prior to the formation ofbit line electrode 102. Such an embodiment is described in greater detail below in conjunction withFIG. 5B . -
FIGS. 5A and 5B are schematic cross-sectional views of various embodiments of topoxygen isolation layer 402 inmemory device 200, as indicated inFIG. 4 . One of skill in the art will appreciate that the embodiments of topoxygen isolation layer 402 described in conjunction withFIGS. 5A and 5B can be readily applied to bottomoxygen isolation layer 401 as well without further recitation. - In
FIG. 5A , topoxygen isolation layer 402 is disposed betweentop electrode 106 and topbit line electrode 102 and includes bothoxygen barrier layer 501 andsacrificial layer 502. The thickness ofoxygen barrier layer 501 can be selected based on the permeability thereof with respect to oxygen and other unwanted mobile ions. It is noted that becauseoxygen barrier layer 501 is electrically conductive, thethickness 511 ofoxygen barrier layer 501 can be configured to be relatively thick without impairing the operation or performance ofmemory device 200. In this way,oxygen barrier layer 501 can prevent most or all migration of oxygen ions intovariable resistance layer 206. In one embodiment,oxygen barrier layer 501 has athickness 511 of between 5 nm and 50 nm. In contrast,sacrificial layer 502 is relatively thin layer, so that unwanted resistance is not introduced intomemory device 200 when thesacrificial layer 502 is partially or wholly converted to an insulative material. Thethickness 512 ofsacrificial layer 502 can be selected based on the maximum allowable resistance ofsacrificial layer 502 if completely converted to an insulating material, such as silicon dioxide (SiO2). In order to minimize unwanted resistance caused by the conversion ofsacrificial layer 502 into such an insulating material, and to ensure that a typical forming voltage can break down such an insulating material, in someembodiments thickness 512 may be selected to be no greater than about 3 to 7 Å. - In some embodiments,
oxygen barrier layer 501 is formed on top ofsacrificial layer 502, as shownFIG. 5A . In such embodiments,oxygen barrier layer 501 is configured to act as a physical barrier for the majority of oxygen ions migrating towardvariable resistance layer 206, andsacrificial layer 502 is positioned to react with any oxygen ions that penetrateoxygen barrier layer 501. Becausesacrificial layer 502 is relatively thin and has the capacity to react with only a limited number of oxygen ions, an advantage of this embodiment is thatsacrificial layer 502 is reserved for stopping the small number of oxygen ions that have penetratedoxygen barrier layer 501. - In the embodiment illustrated in
FIG. 5A ,oxygen barrier layer 501 is formed on top ofsacrificial layer 502, however, other configurations ofoxygen barrier layer 501 andsacrificial layer 502 are also contemplated by embodiments of the invention. In one such embodiment,oxygen barrier layer 501 is first formed ontop electrode 106, andsacrificial layer 502 is then formed onoxygen barrier layer 501. In another such embodiment, topoxygen isolation layer 402 includessacrificial layer 502 but does not includeoxygen barrier layer 501. In yet another embodiment,top isolation layer 402, includesoxygen barrier layer 501 but does not includesacrificial layer 502. - In some embodiments,
sacrificial layer 502 is deposited with an initial thickness that is significantly greater thanthickness 512, thereby providing enhanced capacity for protectingvariable resistance layer 206 from oxygen during fabrication ofmemory device 200. The initial thickness 513 ofsacrificial layer 502 can be selected based on the estimated quantity of oxygen ions that will migrate intosacrificial layer 502 during fabrication ofmemory device 200. Such an estimate may include the mean free path traveled by oxygen ions during fabrication ofmemory device 200 and the concentration of mobile oxygen ions in the bulk material ofmemory device 200. In such embodiments,sacrificial layer 502 remains in place while oxygen-intensive processes are performed as part of fabricating memory device 200 (e.g., reactive etch processes and processes for the formation of electrically insulating material 410). Then, prior to the formation ofbit line electrode 102, most or all ofsacrificial layer 502 is removed, so that a thick, electrically insulative layer is not present betweentop electrode 106 andbit line electrode 102 that can impair operation ofmemory device 200. In one embodiment, a layer ofthickness 512 may be left in place after such removal to protectvariable resistance layer 206 during operation. - In
FIG. 5B , topoxygen isolation layer 402 includessacrificial layer 502 embedded insidetop electrode 106. In such an embodiment,sacrificial layer 502 may be very thin for the reasons detailed above, for example from 3 to 7 Å. In addition, topoxygen isolation layer 402 may further includeoxygen barrier layer 501 formed betweentop electrode 106 andbit line electrode 102, thereby providing further protection ofvariable resistance layer 206 from oxygen ion migration. -
FIG. 6 is a schematic cross-sectional view ofmemory device 200 formed with oxygen isolation layers 610 formed onsidewalls 620 ofmemory element 112, according to an embodiment of the invention. The embodiment ofmemory device 200 illustrated inFIG. 6 is substantially similar in organization and operation to the embodiment illustrated inFIG. 4 , with the addition of oxygen isolation layers 610 formed onsidewalls 620 ofmemory element 112. - Oxygen isolation layers 610 are configured to further isolate
memory cell 112 from oxygen migration without affecting the operation ofmemory device 200. To that end, oxygen isolation layers 610 comprise materials that are not oxygen-containing and do not form a significant current path aroundmemory element 112, i.e., frombit line electrode 102 toword line electrode 118. In order to prevent such a current path, oxygen isolation layers 610 have significantly higher resistance relative tomemory element 112, and consequently are formed from different materials than bottomoxygen isolation layer 401 and topoxygen isolation layer 402. Furthermore, oxygen isolation layers 610 can have no resistive switching properties. Oxygen isolation layers 610 may include an oxygen barrier layer, a sacrificial layer, or a combination of both. - Suitable oxygen barrier layers for oxygen isolation layers 610 have an amorphous structure after high-temperature processes and have relatively high electrical resistivity. In addition, suitable oxygen barrier layers for oxygen isolation layers have higher oxygen affinity than the materials in
memory cell 112. In one embodiment,oxygen isolation layer 610 includes silicon nitride (Si3N4) or tetraethyl orthosilicate (TEOS, or Si(OC2H5)4). Suitable sacrificial layer materials for oxygen isolation layers 610 include materials that is more reactive with oxygen than the materials inmemory cell 112. Ideally, the sacrificial layer in oxygen isolation layers 610 also maintains an amorphous structure after high-temperature processes. For example, in one embodiment, oxygen isolation layers 610 each include a layer of amorphous silicon, which is highly reactive with oxygen and has an amorphous structure. In one such embodiment, an oxygen barrier layer is positioned betweenmemory element 112 and the sacrificial layer. -
FIG. 7 sets forth a flowchart of method steps in aprocess sequence 700 for formingmemory device 200, according to embodiments of the invention. Although the method steps are described in conjunction withmemory device 200 inFIG. 6 , persons skilled in the art will understand that formation of other resistive switching memory devices usingprocess sequence 700 is within the scope of the invention. - As shown,
method 700 begins atstep 701, in whichword line electrode 118 is formed. In one embodiment,word line electrode 118 is a highly doped polysilicon layer that is formed onsubstrate 201 using a conventional CVD or ALD type polysilicon deposition technique, and is between about 50 Å and about 5000 Å thick. - In
step 702, bottomoxygen isolation layer 401 is formed onword line electrode 118 using a deposition process or processes appropriate to the configuration of bottomoxygen isolation layer 401. For example, in embodiments in which bottomoxygen isolation layer 401 includes an amorphous silicon layer as a sacrificial layer, a chemical vapor deposition (CVD) process can be used. In embodiments in which bottomoxygen isolation layer 401 includes a refractory metal silicon carbide as an oxygen barrier layer, such as TaxSiyCx, a DC magnetron co-sputtering process can be used. In one such embodiment, a Ta40W40Si10C10 thin film can be deposited using three-target dc-magnetron co-sputtering with tantalum, tungsten (W) and silicon carbide (SiC) targets. In some embodiments, a sacrificial layer may be formed on top ofoxygen barrier layer 501 to be positioned closer tovariable resistance layer 206. - In
step 703,bottom electrode 108 is formed on bottomoxygen isolation layer 401 using a deposition process or processes appropriate to the materials included inbottom electrode 108. For example, whenbottom electrode 108 is a highly doped polysilicon layer, a conventional CVD or ALD type polysilicon deposition technique may be used to formbottom electrode 108 with a thickness that is between about 50 and about 5000 Å. - In
step 704,variable resistance layer 206 is deposited on thebottom electrode 108 using an appropriate deposition process. For example, whenvariable resistance layer 206 comprises a metal oxide layer, such as HfxOy, TaxOy, AlxOy, LaxOy, YxOy, DyxOy, YbxOy and/or ZrxOy, formed to a thickness of between about 20 and about 100 Å,variable resistance layer 206 can be deposited using an ALD process well-known in the art. In other embodiments,variable resistance layer 206 can be deposited using a CVD process, such as low-pressure CVD (LPCVD) or plasma-enhanced (PECVD), physical vapor deposition (PVD) processes, liquid deposition processes, or epitaxy processes. In one embodiment, an ALD process using tetrakis(dimethylamino)hafnium (TDMAH) and an oxygen-containing precursor at a temperature of about 250° C. is used to form a 50 Å thick, hafnium oxide (HfxOy) containingvariable resistance layer 206. - In
step 705,top electrode 106 is formed onvariable resistance layer 206 using a deposition process or processes appropriate to the materials included intop electrode 106, including PVD, CVD, ALD or other similar processes. In one example, a PVD process is used to formelectrode 102 that comprises titanium nitride (TiN) and is between about 100 Å and 1000 Å thick. - In
step 706, topoxygen isolation layer 402 is formed ontop electrode 106 using a deposition process or processes appropriate to the configuration of topoxygen isolation layer 402. Similar processes described above instep 702 for bottomoxygen isolation layer 401 may be used instep 706. - It is noted that the processes described in steps 701-706 form blanket layers of different materials on
substrate 201. Instep 707, the film stack deposited in steps 701-706 is patterned and etched using standard techniques known in the art to form theindividual memory devices 200 ofmemory array 100. - In
step 708, oxygen isolation layers 610 are formed onsidewalls 620 ofmemory element 112 using a deposition process or processes appropriate to the configuration of topoxygen isolation layer 402. In some embodiments, a conformal process is used to deposit a silicon nitride (Si3N4) layer as an oxygen barrier layer. In such embodiments, a CVD process can be used to provide adequate step coverage ofsidewalls 620. In one such embodiment, a sacrificial layer is then deposited onoxygen barrier layer 501, such as an amorphous silicon layer. - In
step 709, electrically insulatingmaterial 410 is deposited as shown to passivate and protect thememory devices 200 ofmemory array 100. In some embodiments, a CVD oxide deposition process is used. It is noted that the presence of bottomoxygen isolation layer 401, topoxygen isolation layer 402, and oxygen isolation layers 610 helps prevent oxygen migration intomemory cell 112 duringstep 709. - In
step 710, in embodiments in which a thick sacrificial layer is formed ontop electrode 106, a suitable material removal process is used to largely or completely removesacrificial layer 502. A wet oxide etch process, a dry etch process, or a chemical-mechanical polishing (CMP) process may be used to performstep 710. In some embodiments, the thickness of the remaining portion ofsacrificial layer 502 is between about 3 to 7 Å. In other embodiments,sacrificial layer 502 is entirely removed. - In
step 711,bit line electrode 102 is deposited on electrically insulatingmaterial 410 and topoxygen isolation layer 402 as shown. In some embodiments,bit line electrode 102 is deposited as a blanket film with an appropriate deposition process, and is then patterned and etched to formbit line electrodes 102 ofmemory array 100. In some embodiments,bit line electrode 102 includes a metallic conductor, and is deposited using any technically feasible metal deposition process known in the art. - While embodiments of the invention are described herein in terms of
memory device 200 and resistive switching memory elements that are used to form memory arrays, embodiments of the present invention can be applied to other resistive memory devices without exceeding the scope of the invention described herein. Thus, other configurations of resistive memory device may also benefit from embodiments of the invention. - In sum, embodiments of the invention provide a nonvolatile resistive memory element having one or more novel oxygen isolation structures and methods of forming the same. Use of the oxygen isolation structures advantageously improves performance and longevity of the nonvolatile resistive memory element by preserving defects in the resistive switching material, such as oxygen vacancies, that are responsible for the switching capability of the resistive switching material.
- While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (20)
1. A method of forming a device, the method comprising:
forming a first layer over a substrate,
wherein the first layer is operable as a first oxygen isolation layer;
forming a second layer over the first layer,
wherein the second layer is operable as a first electrode;
forming a third layer over the second layer,
wherein the third layer is operable as a variable resistance layer configured to switch between a low resistive state and a high resistive state,
wherein the first layer is configured to block oxygen migration between the substrate and the third layer when the third layer switches between the low resistive state and the high resistive state; and
forming a fourth layer over the third layer,
wherein the second layer is operable as a second electrode.
2. The method of claim 1 , wherein the first layer comprises tantalum, silicon, and carbon.
3. The method of claim 1 , wherein the first layer comprises Ta40W40Si10C10.
4. The method of claim 1 , wherein the first layer is formed by co-sputtering a tantalum target, a tungsten target, and a silicon carbide target.
5. The method of claim 1 , wherein the first layer comprises an oxygen barrier layer and a sacrificial layer, wherein the oxygen barrier layer is operable as a physical barrier to migration of mobile oxygen ions through the first layer, and wherein a material of the sacrificial layer is more reactive with oxygen than a material of the third layer.
6. The method of claim 5 , wherein a resistance of the oxygen barrier layer is no more than about 10% of a resistance of the third layer when in the low resistive state.
7. The method of claim 5 , wherein the oxygen barrier layer is substantially amorphous.
8. The method of claim 5 , further comprising annealing the device comprising the oxygen barrier layer at a temperature of at least 600° C., wherein the oxygen barrier layer is substantially amorphous after annealing.
9. The method of claim 5 , wherein the oxygen barrier layer has a thickness of between 5 nanometers and 50 nanometers.
10. The method of claim 5 , wherein the sacrificial layer has a thickness of less than 2 nanometers.
11. The method of claim 5 , wherein the sacrificial layer has a thickness of between 0.3 nanometers and 0.7 nanometers.
12. The method of claim 5 , wherein the sacrificial layer is amorphous.
13. The method of claim 5 , wherein the sacrificial layer comprises amorphous silicon.
14. The method of claim 1 , wherein the third layer comprises one of HfxOy, TaxOy, AlxOy, LaxOy, YxOy, DyxOy, YbxOy, or ZrxOy.
15. The method of claim 1 , wherein the third layer has a thickness of between about 2 nanometers and 10 nanometers.
16. The method of claim 1 , wherein the fourth layer comprises titanium nitride and has a thickness of between about 10 nanometers and 100 nanometers.
17. The method of claim 1 , further comprising forming a fifth layer covering sidewalls of at least the third layer, wherein the fifth layer is operable as a second oxygen isolation layer.
18. The method of claim 17 , wherein the fifth layer comprises one of silicon nitride, tetraethyl orthosilicate, or amorphous silicon.
19. The method of claim 17 , wherein the fifth layer comprises silicon nitride.
20. The method of claim 1 , further comprising forming a sixth layer over the fourth layer, wherein the sixth layer is operable as a third oxygen isolation layer, and wherein the first layer, the second layer, the third layer, the fourth layer, and the sixth layer form a stack.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/504,620 US20150017780A1 (en) | 2012-02-29 | 2014-10-02 | Nonvolatile Resistive Memory Element With an Integrated Oxygen Isolation Structure |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/408,103 US8878152B2 (en) | 2012-02-29 | 2012-02-29 | Nonvolatile resistive memory element with an integrated oxygen isolation structure |
US14/504,620 US20150017780A1 (en) | 2012-02-29 | 2014-10-02 | Nonvolatile Resistive Memory Element With an Integrated Oxygen Isolation Structure |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/408,103 Continuation US8878152B2 (en) | 2012-02-29 | 2012-02-29 | Nonvolatile resistive memory element with an integrated oxygen isolation structure |
Publications (1)
Publication Number | Publication Date |
---|---|
US20150017780A1 true US20150017780A1 (en) | 2015-01-15 |
Family
ID=49001843
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/408,103 Expired - Fee Related US8878152B2 (en) | 2012-02-29 | 2012-02-29 | Nonvolatile resistive memory element with an integrated oxygen isolation structure |
US14/504,620 Abandoned US20150017780A1 (en) | 2012-02-29 | 2014-10-02 | Nonvolatile Resistive Memory Element With an Integrated Oxygen Isolation Structure |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/408,103 Expired - Fee Related US8878152B2 (en) | 2012-02-29 | 2012-02-29 | Nonvolatile resistive memory element with an integrated oxygen isolation structure |
Country Status (3)
Country | Link |
---|---|
US (2) | US8878152B2 (en) |
KR (1) | KR102022744B1 (en) |
WO (1) | WO2013130732A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9184379B1 (en) * | 2014-07-18 | 2015-11-10 | Intermolecular, Inc. | Capping thin-film resistors to control interface oxidation |
TWI553926B (en) * | 2015-10-29 | 2016-10-11 | 華邦電子股份有限公司 | Resistive memory and method of fabricating the same |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8934282B2 (en) * | 2012-05-31 | 2015-01-13 | Freescale Semiconductor, Inc. | Circuitry including resistive random access memory storage cells and methods for forming same |
US8658463B2 (en) * | 2012-07-30 | 2014-02-25 | Hewlett-Packard Development Company, L.P. | Memristor with embedded switching layer |
US9252359B2 (en) | 2013-03-03 | 2016-02-02 | Adesto Technologies Corporation | Resistive switching devices having a switching layer and an intermediate electrode layer and methods of formation thereof |
US20160043142A1 (en) * | 2013-03-21 | 2016-02-11 | Industry-University Cooperation Foundation Hanyang University | Two-terminal switching element having bidirectional switching characteristic, resistive memory cross-point array including same, and method for manufacturing two-terminal switching element and cross-point resistive memory array |
KR20140118177A (en) * | 2013-03-28 | 2014-10-08 | 인텔렉추얼디스커버리 주식회사 | Resistive random access memory |
US9831427B1 (en) | 2014-08-21 | 2017-11-28 | National Technology & Engineering Solutions Of Sandia, Llc | Ion-barrier for memristors/ReRAM and methods thereof |
TWI696997B (en) * | 2014-10-07 | 2020-06-21 | 美商愛德斯托科技公司 | Memory elements having conductive cap layers and methods therefor |
US9246087B1 (en) * | 2014-11-24 | 2016-01-26 | Intermolecular, Inc. | Electron barrier height controlled interfaces of resistive switching layers in resistive random access memory cells |
KR20160079990A (en) * | 2014-12-26 | 2016-07-07 | 에스케이하이닉스 주식회사 | Semiconductor Integrated Circuit Device Including encapsulation film And Method of Manufacturing The same |
US10516110B2 (en) * | 2016-07-12 | 2019-12-24 | Arm Ltd. | Fabrication of correlated electron material devices with reduced interfacial layer impedance |
EP3539132A4 (en) * | 2016-11-14 | 2019-11-27 | Hefei Reliance Memory Limited | Rram process intergration scheme and cell structure with reduced masking operations |
US10580978B2 (en) | 2017-01-08 | 2020-03-03 | Intermolecular, Inc. | Current compliance layers and memory arrays comprising thereof |
TWI610476B (en) * | 2017-03-16 | 2018-01-01 | 華邦電子股份有限公司 | Resistive random access memory structure and forming method thereof |
KR20180134123A (en) * | 2017-06-08 | 2018-12-18 | 에스케이하이닉스 주식회사 | Resistance Change Memory Device |
US10516105B2 (en) * | 2017-08-22 | 2019-12-24 | Sandisk Technologies Llc | Resistive memory device containing oxygen-modulated hafnium oxide material and methods of making thereof |
KR102377569B1 (en) * | 2018-03-15 | 2022-03-22 | 에스케이하이닉스 주식회사 | Nonvolatile Memory Device |
US10833262B2 (en) * | 2018-03-16 | 2020-11-10 | 4D-S, Ltd. | Resistive memory device having a conductive barrier layer |
US10734576B2 (en) | 2018-03-16 | 2020-08-04 | 4D-S, Ltd. | Resistive memory device having ohmic contacts |
US10381558B1 (en) * | 2018-03-16 | 2019-08-13 | 4D-S, Ltd. | Resistive memory device having a retention layer |
US10505109B1 (en) * | 2018-05-23 | 2019-12-10 | Purdue Research Foundation | Phase transition based resistive random-access memory |
US20200295083A1 (en) * | 2019-03-15 | 2020-09-17 | Macronix International Co., Ltd. | Barrier layer for selector devices and memory devices using same |
US11145811B2 (en) * | 2019-10-16 | 2021-10-12 | International Business Machines Corporation | Resistive memory with core and shell oxides and interface dipoles |
TWI726830B (en) * | 2020-12-02 | 2021-05-01 | 華邦電子股份有限公司 | Resistive memory |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030128483A1 (en) * | 2001-10-12 | 2003-07-10 | Nec Corporation | Exchange coupling film, magneto-resistance effect device, magnetic head, and magnetic random access memory |
US20030179617A1 (en) * | 2001-11-23 | 2003-09-25 | Gudesen Hans Gude | Ferroelectric or electret memory circuit |
US20040159828A1 (en) * | 2002-08-02 | 2004-08-19 | Unity Semiconductor, Inc. | Resistive memory device with a treated interface |
US20090283736A1 (en) * | 2007-06-05 | 2009-11-19 | Yoshihiko Kanzawa | Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element |
US20100012912A1 (en) * | 2008-07-15 | 2010-01-21 | Sandisk 3D Llc | Electronic devices including carbon-based films having sidewall liners, and methods of forming such devices |
US20100258782A1 (en) * | 2009-04-10 | 2010-10-14 | Ronald John Kuse | Resistive-switching memory elements having improved switching characteristics |
US20100308298A1 (en) * | 2008-10-01 | 2010-12-09 | Takeki Ninomiya | Nonvolatile memory element and nonvolatile memory device incorporating nonvolatile memory element |
US20130122680A1 (en) * | 2010-09-29 | 2013-05-16 | Crossbar, Inc. | Resistor structure for a non-volatile memory device and method |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6830983B2 (en) | 2002-08-29 | 2004-12-14 | Micron Technology, Inc. | Method of making an oxygen diffusion barrier for semiconductor devices using platinum, rhodium, or iridium stuffed with silicon oxide |
KR100719380B1 (en) | 2006-03-31 | 2007-05-18 | 삼성전자주식회사 | Multi-valued nonvolatile memory device with enhanced reliability and memory system having the same |
US7538338B2 (en) | 2004-09-03 | 2009-05-26 | Unity Semiconductor Corporation | Memory using variable tunnel barrier widths |
ATE472157T1 (en) * | 2004-05-03 | 2010-07-15 | Unity Semiconductor Corp | NON-VOLATILE PROGRAMMABLE MEMORY |
KR101206034B1 (en) * | 2006-05-19 | 2012-11-28 | 삼성전자주식회사 | Nonvolatile memory device using oxygen-deficient metal oxide layer and the fabrication method |
JP2008066603A (en) * | 2006-09-08 | 2008-03-21 | Toshiba Corp | Semiconductor memory device and its manufacturing method |
WO2009015298A2 (en) * | 2007-07-25 | 2009-01-29 | Intermolecular, Inc. | Nonvolatile memory elements |
US8284596B2 (en) | 2008-06-09 | 2012-10-09 | Qimonda Ag | Integrated circuit including an array of diodes coupled to a layer of resistance changing material |
US8420478B2 (en) | 2009-03-31 | 2013-04-16 | Intermolecular, Inc. | Controlled localized defect paths for resistive memories |
KR20120006502A (en) * | 2009-04-10 | 2012-01-18 | 인터몰레큘러 인코퍼레이티드 | Resistive-switching memory elements having improved switching characteristics |
US8227783B2 (en) * | 2009-07-13 | 2012-07-24 | Seagate Technology Llc | Non-volatile resistive sense memory with praseodymium calcium manganese oxide |
KR20110024495A (en) * | 2009-09-02 | 2011-03-09 | 주식회사 하이닉스반도체 | Resistive memory device and method for manufacturing the same |
TWI416661B (en) * | 2009-12-29 | 2013-11-21 | Ind Tech Res Inst | Air gap fabricating method, resist memory device and fabricating method thereof |
-
2012
- 2012-02-29 US US13/408,103 patent/US8878152B2/en not_active Expired - Fee Related
-
2013
- 2013-02-28 KR KR1020147027284A patent/KR102022744B1/en active IP Right Grant
- 2013-02-28 WO PCT/US2013/028201 patent/WO2013130732A1/en active Application Filing
-
2014
- 2014-10-02 US US14/504,620 patent/US20150017780A1/en not_active Abandoned
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030128483A1 (en) * | 2001-10-12 | 2003-07-10 | Nec Corporation | Exchange coupling film, magneto-resistance effect device, magnetic head, and magnetic random access memory |
US20030179617A1 (en) * | 2001-11-23 | 2003-09-25 | Gudesen Hans Gude | Ferroelectric or electret memory circuit |
US20040159828A1 (en) * | 2002-08-02 | 2004-08-19 | Unity Semiconductor, Inc. | Resistive memory device with a treated interface |
US20090283736A1 (en) * | 2007-06-05 | 2009-11-19 | Yoshihiko Kanzawa | Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element |
US20100012912A1 (en) * | 2008-07-15 | 2010-01-21 | Sandisk 3D Llc | Electronic devices including carbon-based films having sidewall liners, and methods of forming such devices |
US20100308298A1 (en) * | 2008-10-01 | 2010-12-09 | Takeki Ninomiya | Nonvolatile memory element and nonvolatile memory device incorporating nonvolatile memory element |
US20100258782A1 (en) * | 2009-04-10 | 2010-10-14 | Ronald John Kuse | Resistive-switching memory elements having improved switching characteristics |
US20130122680A1 (en) * | 2010-09-29 | 2013-05-16 | Crossbar, Inc. | Resistor structure for a non-volatile memory device and method |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9184379B1 (en) * | 2014-07-18 | 2015-11-10 | Intermolecular, Inc. | Capping thin-film resistors to control interface oxidation |
TWI553926B (en) * | 2015-10-29 | 2016-10-11 | 華邦電子股份有限公司 | Resistive memory and method of fabricating the same |
Also Published As
Publication number | Publication date |
---|---|
US8878152B2 (en) | 2014-11-04 |
US20130221307A1 (en) | 2013-08-29 |
WO2013130732A1 (en) | 2013-09-06 |
KR102022744B1 (en) | 2019-09-18 |
KR20140138805A (en) | 2014-12-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8878152B2 (en) | Nonvolatile resistive memory element with an integrated oxygen isolation structure | |
US7960216B2 (en) | Confinement techniques for non-volatile resistive-switching memories | |
US9178147B2 (en) | Resistive-switching memory elements having improved switching characteristics | |
US9048425B2 (en) | Bipolar multistate nonvolatile memory | |
US8183553B2 (en) | Resistive switching memory element including doped silicon electrode | |
US8981332B2 (en) | Nonvolatile resistive memory element with an oxygen-gettering layer | |
US8394669B2 (en) | Resistance variable element and resistance variable memory device | |
JP5104763B2 (en) | Nonvolatile memory device | |
US8637413B2 (en) | Nonvolatile resistive memory element with a passivated switching layer | |
US20150137062A1 (en) | Mimcaps with quantum wells as selector elements for crossbar memory arrays | |
KR101046725B1 (en) | Resistive memory devices | |
US8872152B2 (en) | IL-free MIM stack for clean RRAM devices | |
JP5407864B2 (en) | Resistance change element and semiconductor memory device | |
US20130134373A1 (en) | Nonvolatile resistive memory element with a novel switching layer |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |