US20140264989A1 - Methods for reducing charge effects and separation forces in nanoimprint - Google Patents
Methods for reducing charge effects and separation forces in nanoimprint Download PDFInfo
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- US20140264989A1 US20140264989A1 US14/216,858 US201414216858A US2014264989A1 US 20140264989 A1 US20140264989 A1 US 20140264989A1 US 201414216858 A US201414216858 A US 201414216858A US 2014264989 A1 US2014264989 A1 US 2014264989A1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/0083—Electrical or fluid connection systems therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
- G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C37/00—Component parts, details, accessories or auxiliary operations, not covered by group B29C33/00 or B29C35/00
- B29C37/0003—Discharging moulded articles from the mould
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/56—Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
- B29C59/026—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing of layered or coated substantially flat surfaces
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
- G01N21/648—Specially adapted constructive features of fluorimeters using evanescent coupling or surface plasmon coupling for the excitation of fluorescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6486—Measuring fluorescence of biological material, e.g. DNA, RNA, cells
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
- B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
- B29C2059/023—Microembossing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/42—Moulds or cores; Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves
- B29C33/424—Moulding surfaces provided with means for marking or patterning
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2995/00—Properties of moulding materials, reinforcements, fillers, preformed parts or moulds
- B29K2995/0003—Properties of moulding materials, reinforcements, fillers, preformed parts or moulds having particular electrical or magnetic properties, e.g. piezoelectric
- B29K2995/0005—Conductive
Definitions
- Nanoimprint needs reduction charge effects and separation forces.
- the invention is related to the methods and apparatus to reduce charge effects and separation forces in nanoimprint, hence improve nanoimprint quality.
- FIG. 1 Schematics of a nanoimprint mold and a substrate, each has three layers.
- the table shows which layer should be grounded. The best approach is the ground layer as close to the contact surface as possible.
- FIG. 2 Schematics of the possibility of grounding.
- FIG. 3 (A) the cross section view of one type of MicroE mold that has an insulating body. (B) the cross section view of one type of MicroE mold that has a conductive body. And (C) the cross section view of MicroE substrate that carries a thin film as resist.
- FIG. 4 is the experimental results comparing the effect in reducing the separation force between planar MicroE mold and conventional mold.
- FIG. 5 The experimental results comparing the effect in reducing the separation force between the nanostructured MicroE mold and conventional mold, showing the advantage of the MicroE mold.
- the invention is related to nanoparticle structures
- an ion beam discharge when separating the mold and substrate, will be used to discharge the charge between the mold and substrate. The separation will start from edge and gradually open up.
- the deposit metal film on the surface of the mold in thin resist with good conductivity using light after imprint to increase conductivity of the resist, if resist is photoconductive.
- the present invention relates to the strength of electric field between mold and substrate in their separation.
- tribo-electricity is generated after lithography mask separates from substrate.
- the tribo-charge on the surface of mold and thin film on substrate give rise to electric field between them.
- the electric field caused attraction between mold and substrate and enlarges the mold-substrate separation force.
- the present invention relates to the method to reduce the strength of electric field between mold and substrate in their separation.
- the method is to coat a thin conductive layer (thinner than 10 nm and approaching monolayer) onto insulating mold surface and onto surface of substrate carrying on insulating thin film.
- the image charge induced in the process of mold-substrate separation reduces the strength of electric field in the gap between them.
- conductive and insulating material may be described as follows.
- a conductive coating or material is one whose relaxation time is shorter than the time taken to separate mold from substrate.
- the relaxation time of material is the product of R and C, where R is the material resistance and C is the material capacitance.
- the relaxation time equals to ⁇ 0 / ⁇ a for metallic materials and ⁇ r ⁇ 0 / ⁇ for semiconducting or dielectric materials, where ⁇ 0 and ⁇ r are vacuum permittivity and relative dielectric constant respectively, and ⁇ is conductivity of material.
- ⁇ is conductivity of material.
- conductive materials it meant that conductivity of materials is larger than ⁇ /t
- insulating materials means materials whose conductivity smaller than ⁇ /t. For example, if it takes 1 ms to separate mold from substrate, then materials and coating film having a conductivity larger than 10 ⁇ 6 S/m are conductive materials.
- conductivity of insulating materials is smaller than 10 ⁇ 6 S/m.
- FIG. 3A shows MicroE mold 1 that has insulating body 2 as defined above. Surface of MicroE mold is coated by a thin conductive layer 3 . On top of 3 deposited a layer of release layer that has non-stick functionality as US 2001/6309580 (Stephen Chou).
- the conductive coating material can be, but not limited to, metallic, semi-metallic, metallic and semi-metallic oxides, carbides and nitrides, polymeric, semiconductors, glass, ceramic, dielectrics and composites, as long as the charge relaxation time of materials (RC time) is shorter than time t used in separation.
- the thickness of the coating is thinner than 10 nm and approaches monolayer thickness until the conductivity of thin film significantly drop and the film transforms to insulator.
- the insulating body 2 in FIG. 1A has a relaxation time longer than separation time t, particularly but not exclusively includes glass, ceramic, polymeric materials, oxides, carbides and nitrides dielectrics and composites.
- FIG. 3B shows another type of MicroE mold 5 . It has a conductive body 6 , on top of which coated by anti-sticky layer 8 as disclosed in US 2005/0146079 (Stephen Chou).
- the conductive thin layer 7 between 6 and 8 is coated only when the surface of MicroE mold body 6 does not provide sufficient bonds to anti-sticky layer 8 and performs to assist molecular bonding.
- the materials of conductive layer coating includes but not limited to metallic, semi-metallic, metallic and semi-metallic oxides, carbides and nitrides, polymeric, semiconductors, glass, ceramic, dielectrics and composites.
- FIG. 3C shows the MicroE substrate 9 . It consists of a substrate body 10 .
- a thin conductive layer 11 is coated on the surface of substrate body 10 and carries the thin film 12 known as resist in lithography methods.
- thin layer 11 are but not limited to metallic, semi-metallic, metallic and semi-metallic oxides, carbides and nitrides, polymeric, semiconductors, glass, ceramic, dielectrics and composites.
- Thin film 12 may comprise thermally or optically curable polymer material or any other materials that may change materials property following the change of environment (e.g. heating, mechanically re-shaping, optically shinning, electron beam treating).
- light can be used to reduce the tribo-electric charge.
- MircroE mold body consists of silicon dioxide backed by silicon bulk.
- the conductive layer used in one experiment is Ti.
- a 5 nm Ti coating layer was coated onto the surface of MicroE mold body using electron beam sputtering machine.
- a mold release layer of 1H, 1H, 2H, 2H-perfluorodocecyltrichlorosilane (commercially available as a 97% solids solution) is bonded to the surface of Ti and used as an anti-release layer.
- the MicroE mold was then applied in nanoimprint lithography US 1998/5772905 (Stephen Y Chou).
- the silicon substrate carries a commercially thermal-plastic resist (NX-1025) that would get intimate get with the MicroE mold and get separated afterwards.
- FIG. 4 shows experimental results on peak separation force comparing MicroE mold with conventional mold without 5 nm conductive coating.
- MicroE mold is planar.
- a 8 ⁇ reduction in separation force is obtained by using MicroE mold with a bulky silicon dioxide body and nanomprinted onto thermal-plastic resist on silicon substrate.
- FIG. 5 shows experimental results on peak separation force comparing MicroE mold with conventional mold without 5 nm conductive coating.
- MicroE mold has 200 nm pitch 160 nm deep grating and 1 micro-meter pitch, 160 nm deep grating feature size.
- the substrate used is silicon substrate that carries NX-1025 thermal-plastic resist.
- a 3 ⁇ reduction in separation force is obtained for MicroE mold with 1 micron-meter pitch grating and 2 ⁇ reduction for the one with 200 nm pitch grating features.
- Table 1 shows results on measured charge density on as-imprinted thin film on substrate as a function of thickness of SiO2 middle layer.
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Abstract
The present invention relates to methods to reduce release force caused by tribo-charge. The invented mold is termed as MicroE mold and substrate is termed as MicroE substrate. The addition of conductive thin coatings (less than 10 nm and approaching monolayer coating) onto surface of insulating mold or substrate provides a reduction of the separation force caused by tribo-electric charge. The MicroE mold and MicroE substrate are specifically good for a lithographic method that involves contact between mold and substrate, or between mold and thin film carried on substrate, and used for creation and replication of ultra-fine structures (sub-25 nm) as well as millimeter scale. The present invention is particularly but not exclusively applied to any contact lithographic method.
Description
- This application is also claims the benefit of: provisional application Ser. No. 61/801,424, filed Mar. 15, 2013 (NSNR-004PRV), provisional application Ser. No. 61/801,096, filed Mar. 15, 2013 (NSNR-005PRV), provisional application Ser. No. 61/800,915, filed Mar. 15, 2013 (NSNR-006PRV), provisional application Ser. No. 61/793,092, filed Mar. 15, 2013 (NSNR-008PRV), provisional Application Ser. No. 61/801,933, filed Mar. 15, 2013 (NSNR-009PRV), provisional Application Ser. No.61/794,317, filed Mar. 15, 2013 (NSNR-010PRV), provisional application Ser. No. 61/802,020, filed Mar. 15, 2013 (NSNR-011PRV) and provisional application Ser. No. 61/802,223, filed Mar. 15, 2013 (NSNR-012PRV), all of which applications are incorporated by reference herein for all purposes.
- Nanoimprint needs reduction charge effects and separation forces.
- The following brief summary is not intended to include all features and aspects of the present invention, nor does it imply that the invention must include all features and aspects discussed in this summary.
- The invention is related to the methods and apparatus to reduce charge effects and separation forces in nanoimprint, hence improve nanoimprint quality.
- The skilled artisan will understand that the drawings, described below, are for illustration purposes only. The drawings are not intended to limit the scope of the present teachings in any way. Some of the drawings are not in scale.
-
FIG. 1 Schematics of a nanoimprint mold and a substrate, each has three layers. The table shows which layer should be grounded. The best approach is the ground layer as close to the contact surface as possible. -
FIG. 2 Schematics of the possibility of grounding. -
FIG. 3 (A) the cross section view of one type of MicroE mold that has an insulating body. (B) the cross section view of one type of MicroE mold that has a conductive body. And (C) the cross section view of MicroE substrate that carries a thin film as resist. -
FIG. 4 is the experimental results comparing the effect in reducing the separation force between planar MicroE mold and conventional mold. -
FIG. 5 The experimental results comparing the effect in reducing the separation force between the nanostructured MicroE mold and conventional mold, showing the advantage of the MicroE mold. - Corresponding reference numerals indicate corresponding parts throughout the several figures of the drawings. It is to be understood that the drawings are for illustrating the concepts set forth in the present disclosure and are not to scale.
- Before any embodiments of the invention are explained in detail, it is to be understood that the invention is not limited in its application to the details of construction and the arrangement of components set forth in the following description or illustrated in the drawings.
- The following detailed description illustrates some embodiments of the invention by way of example and not by way of limitation.
- This disclosure incorporates by reference the following disclosures: U.S. application Ser. No.13/838,600, filed Mar. 15, 2013 (NSNR-003), and U.S. application Ser. No. 13/699,270, filed Jun. 13, 2013 (NSNR-001).
- The invention is related to nanoparticle structures,
- The methods invented, that can reduce the charge effects in nanoimprint, comprising
-
- 1. Having a substrate with a thin conducting layer up close to the surface;
- 2. Having a mold with conducting layer close to surface, therefore the contact charge between the mold and the substrate will be reduced.
- In another approach, when separating the mold and substrate, an ion beam discharge will be used to discharge the charge between the mold and substrate. The separation will start from edge and gradually open up.
- the deposit metal film on the surface of the mold, in thin resist with good conductivity using light after imprint to increase conductivity of the resist, if resist is photoconductive.
- The present invention relates to the strength of electric field between mold and substrate in their separation. For any lithography that involves contact, tribo-electricity is generated after lithography mask separates from substrate. The tribo-charge on the surface of mold and thin film on substrate give rise to electric field between them. The electric field caused attraction between mold and substrate and enlarges the mold-substrate separation force.
- The present invention relates to the method to reduce the strength of electric field between mold and substrate in their separation. The method is to coat a thin conductive layer (thinner than 10 nm and approaching monolayer) onto insulating mold surface and onto surface of substrate carrying on insulating thin film. The image charge induced in the process of mold-substrate separation reduces the strength of electric field in the gap between them. The description of conductive and insulating material may be described as follows. A conductive coating or material is one whose relaxation time is shorter than the time taken to separate mold from substrate. The relaxation time of material is the product of R and C, where R is the material resistance and C is the material capacitance. In addition, the relaxation time equals to ε0/σ a for metallic materials and εrε0/σ for semiconducting or dielectric materials, where ε0 and εr are vacuum permittivity and relative dielectric constant respectively, and σ is conductivity of material. Setting t as the process time to release mold from substrate, by conductive materials, it meant that conductivity of materials is larger than ε/t, while insulating materials means materials whose conductivity smaller than ε/t. For example, if it takes 1 ms to separate mold from substrate, then materials and coating film having a conductivity larger than 10−6 S/m are conductive materials. By the same principle, conductivity of insulating materials is smaller than 10−6 S/m.
-
FIG. 3A shows MicroEmold 1 that has insulatingbody 2 as defined above. Surface of MicroE mold is coated by a thinconductive layer 3. On top of 3 deposited a layer of release layer that has non-stick functionality as US 2001/6309580 (Stephen Chou). The conductive coating material can be, but not limited to, metallic, semi-metallic, metallic and semi-metallic oxides, carbides and nitrides, polymeric, semiconductors, glass, ceramic, dielectrics and composites, as long as the charge relaxation time of materials (RC time) is shorter than time t used in separation. The thickness of the coating is thinner than 10 nm and approaches monolayer thickness until the conductivity of thin film significantly drop and the film transforms to insulator. The insulatingbody 2 inFIG. 1A has a relaxation time longer than separation time t, particularly but not exclusively includes glass, ceramic, polymeric materials, oxides, carbides and nitrides dielectrics and composites. -
FIG. 3B shows another type ofMicroE mold 5. It has aconductive body 6, on top of which coated byanti-sticky layer 8 as disclosed in US 2005/0146079 (Stephen Chou). The conductivethin layer 7 between 6 and 8 is coated only when the surface ofMicroE mold body 6 does not provide sufficient bonds toanti-sticky layer 8 and performs to assist molecular bonding. The materials of conductive layer coating includes but not limited to metallic, semi-metallic, metallic and semi-metallic oxides, carbides and nitrides, polymeric, semiconductors, glass, ceramic, dielectrics and composites. -
FIG. 3C shows theMicroE substrate 9. It consists of asubstrate body 10. A thinconductive layer 11 is coated on the surface ofsubstrate body 10 and carries thethin film 12 known as resist in lithography methods. Examples ofthin layer 11 are but not limited to metallic, semi-metallic, metallic and semi-metallic oxides, carbides and nitrides, polymeric, semiconductors, glass, ceramic, dielectrics and composites.Thin film 12 may comprise thermally or optically curable polymer material or any other materials that may change materials property following the change of environment (e.g. heating, mechanically re-shaping, optically shinning, electron beam treating). - Furthermore, light can be used to reduce the tribo-electric charge.
- Although the foregoing invention has been described in some detail by way of illustration and example for purposes of clarity of understanding, it is readily apparent to those of ordinary skill in the art in light of the teachings of this invention that certain changes and modifications may be made thereto without departing from the spirit or scope of the appended claims.
- Accordingly, the preceding merely illustrates the principles of the invention. It will be appreciated that those skilled in the art will be able to devise various arrangements which, although not explicitly described or shown herein, embody the principles of the invention and are included within its spirit and scope. Furthermore, all examples and conditional language recited herein are principally intended to aid the reader in understanding the principles of the invention and the concepts contributed by the inventors to furthering the art, and are to be construed as being without limitation to such specifically recited examples and conditions. Moreover, all statements herein reciting principles, aspects, and embodiments of the invention as well as specific examples thereof, are intended to encompass both structural and functional equivalents thereof. Additionally, it is intended that such equivalents include both currently known equivalents and equivalents developed in the future, i.e., any elements developed that perform the same function, regardless of structure. The scope of the present invention, therefore, is not intended to be limited to the exemplary embodiments shown and described herein. Rather, the scope and spirit of present invention is embodied by the appended claims.
- An example of MircroE mold body consists of silicon dioxide backed by silicon bulk. The conductive layer used in one experiment is Ti. A 5 nm Ti coating layer was coated onto the surface of MicroE mold body using electron beam sputtering machine. A mold release layer of 1H, 1H, 2H, 2H-perfluorodocecyltrichlorosilane (commercially available as a 97% solids solution) is bonded to the surface of Ti and used as an anti-release layer.
- The MicroE mold was then applied in nanoimprint lithography US 1998/5772905 (Stephen Y Chou). In nanoimprint lithography, the silicon substrate carries a commercially thermal-plastic resist (NX-1025) that would get intimate get with the MicroE mold and get separated afterwards.
-
FIG. 4 shows experimental results on peak separation force comparing MicroE mold with conventional mold without 5 nm conductive coating. In the experiment, MicroE mold is planar. A 8× reduction in separation force is obtained by using MicroE mold with a bulky silicon dioxide body and nanomprinted onto thermal-plastic resist on silicon substrate. -
FIG. 5 . shows experimental results on peak separation force comparing MicroE mold with conventional mold without 5 nm conductive coating. In the experiment, MicroE mold has 200 nm pitch 160 nm deep grating and 1 micro-meter pitch, 160 nm deep grating feature size. The substrate used is silicon substrate that carries NX-1025 thermal-plastic resist. A 3× reduction in separation force is obtained for MicroE mold with 1 micron-meter pitch grating and 2× reduction for the one with 200 nm pitch grating features. - Table 1 shows results on measured charge density on as-imprinted thin film on substrate as a function of thickness of SiO2 middle layer.
-
TABLE 1 Imprint Charge Substrate Type Surface Potential (V) density (C/m2) Si* T-NIL 19 2.5 × 10−3 1 μm SiO2/Si* T-NIL 80 2.2 × 10−3 2.5 μm SiO2/Si* T-NIL 179 2.3 × 10−3 5 μm SiO2/Si* T-NIL 347 2.2 × 10−3 10 μm SiO2/Si* T-NIL 388 1.3 × 10−3 500 μm SiO2/Cr** T-NIL 1600 1.1 × 10−4 Fused Silica T-NIL 27,000 1.0 × 10−5 UV-NIL 20,000 7.5 × 10−6 *Si was grounded during separation and surface potential measurement **Cr was grounded during separation and surface potential measurement
Claims (1)
1. A method to reduce tribo-electricity effect between a mold and a resist on a substrate and improve mold separation and/or nanoimprint quality, comprising:
(a) adding a conducting layer on the mold;
(b) adding a conducing layer on the substrate; and
(c) grounding the conducting layer on the mold and the conducting layer on the substrate,
thereby reducing the tribo-electricity effect between a mold and a resist on a substrate, and/or improving the mold separation and/or nanoimprint quality.
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US14/216,858 US20140264989A1 (en) | 2013-03-15 | 2014-03-17 | Methods for reducing charge effects and separation forces in nanoimprint |
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US201361794317P | 2013-03-15 | 2013-03-15 | |
US201361801424P | 2013-03-15 | 2013-03-15 | |
US201361802223P | 2013-03-15 | 2013-03-15 | |
US201361801096P | 2013-03-15 | 2013-03-15 | |
US201361801933P | 2013-03-15 | 2013-03-15 | |
US201361802020P | 2013-03-15 | 2013-03-15 | |
US201361800915P | 2013-03-15 | 2013-03-15 | |
US201361793092P | 2013-03-15 | 2013-03-15 | |
US14/216,858 US20140264989A1 (en) | 2013-03-15 | 2014-03-17 | Methods for reducing charge effects and separation forces in nanoimprint |
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US14/217,052 Abandoned US20140265013A1 (en) | 2013-03-15 | 2014-03-17 | Methods for creating large-area complex nanopatterns for nanoimprint molds |
US14/216,858 Abandoned US20140264989A1 (en) | 2013-03-15 | 2014-03-17 | Methods for reducing charge effects and separation forces in nanoimprint |
US14/775,635 Abandoned US20160025634A1 (en) | 2013-03-15 | 2014-03-18 | Composite Nanoparticle Structures for Chemical and Biological Sensing |
US15/916,159 Abandoned US20190049385A1 (en) | 2013-03-15 | 2018-03-08 | Composite Nanoparticle Structures for Chemical and Biological Sensing |
US16/038,963 Abandoned US20190079013A1 (en) | 2013-03-15 | 2018-07-18 | Methods for creating large-area complex nanopatterns for nanoimprint molds |
US17/394,223 Abandoned US20220205920A1 (en) | 2013-03-15 | 2021-08-04 | Methods for creating large-area complex nanopatterns for nanoimprint molds |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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US14/217,052 Abandoned US20140265013A1 (en) | 2013-03-15 | 2014-03-17 | Methods for creating large-area complex nanopatterns for nanoimprint molds |
Family Applications After (4)
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US14/775,635 Abandoned US20160025634A1 (en) | 2013-03-15 | 2014-03-18 | Composite Nanoparticle Structures for Chemical and Biological Sensing |
US15/916,159 Abandoned US20190049385A1 (en) | 2013-03-15 | 2018-03-08 | Composite Nanoparticle Structures for Chemical and Biological Sensing |
US16/038,963 Abandoned US20190079013A1 (en) | 2013-03-15 | 2018-07-18 | Methods for creating large-area complex nanopatterns for nanoimprint molds |
US17/394,223 Abandoned US20220205920A1 (en) | 2013-03-15 | 2021-08-04 | Methods for creating large-area complex nanopatterns for nanoimprint molds |
Country Status (4)
Country | Link |
---|---|
US (6) | US20140265013A1 (en) |
EP (2) | EP2972239A4 (en) |
CN (5) | CN105229467A (en) |
WO (6) | WO2014145036A1 (en) |
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Also Published As
Publication number | Publication date |
---|---|
WO2014197097A3 (en) | 2015-01-22 |
US20140265013A1 (en) | 2014-09-18 |
CN105358979A (en) | 2016-02-24 |
WO2014145798A2 (en) | 2014-09-18 |
CN105229467A (en) | 2016-01-06 |
US20160025634A1 (en) | 2016-01-28 |
CN105209884A (en) | 2015-12-30 |
EP2969542A2 (en) | 2016-01-20 |
US20220205920A1 (en) | 2022-06-30 |
WO2014144133A1 (en) | 2014-09-18 |
CN105246682A (en) | 2016-01-13 |
EP2972239A4 (en) | 2016-12-21 |
WO2014197096A2 (en) | 2014-12-11 |
WO2014146115A3 (en) | 2014-12-31 |
EP2969542A4 (en) | 2016-11-09 |
US20190079013A1 (en) | 2019-03-14 |
WO2014145036A1 (en) | 2014-09-18 |
CN105247349A (en) | 2016-01-13 |
WO2014197097A2 (en) | 2014-12-11 |
US20190049385A1 (en) | 2019-02-14 |
WO2014146115A2 (en) | 2014-09-18 |
WO2014145798A3 (en) | 2015-05-28 |
EP2972239A2 (en) | 2016-01-20 |
WO2014197096A3 (en) | 2015-01-29 |
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