US20140206154A1 - Semiconductor device comprising a passive component of capacitors and process for fabrication - Google Patents

Semiconductor device comprising a passive component of capacitors and process for fabrication Download PDF

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Publication number
US20140206154A1
US20140206154A1 US14/221,921 US201414221921A US2014206154A1 US 20140206154 A1 US20140206154 A1 US 20140206154A1 US 201414221921 A US201414221921 A US 201414221921A US 2014206154 A1 US2014206154 A1 US 2014206154A1
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Prior art keywords
frontside
electrical connection
integrated circuit
forming
wafer
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US14/221,921
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Romain Coffy
Yvon Imbs
Laurent Marechal
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STMicroelectronics Grenoble 2 SAS
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STMicroelectronics Grenoble 2 SAS
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Priority to US14/221,921 priority Critical patent/US20140206154A1/en
Assigned to STMICROELECTRONICS (GRENOBLE 2) SAS reassignment STMICROELECTRONICS (GRENOBLE 2) SAS ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MARECHAL, LAURENT, COFFY, ROMAIN, IMBS, YVON
Publication of US20140206154A1 publication Critical patent/US20140206154A1/en
Abandoned legal-status Critical Current

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Definitions

  • This disclosure relates to the field of semiconductor devices.
  • a process for fabricating a semiconductor device is provided.
  • This process comprises: placing, in at least one location on a receiving surface of a carrier, an electrical connection frontside of at least one integrated circuit chip and a frontside of at least one passive component comprising conductive plates separated by dielectric plates forming capacitors; forming on the receiving surface a layer of an encapsulation material so as to obtain, in the location, a wafer comprising an encapsulation block in which the chip and the passive component are embedded and having a frontside comprising the frontside of the chip and the frontside of the passive component; then selectively connecting at least some of the conductive plates to the chip, so that at least some of the capacitors are connected to the chip.
  • the process may comprise: forming at least one front electrical connection track on the frontside of the wafer.
  • the process may comprise: forming at least one back electrical connection track on the backside of the wafer, an electrical connection via through the wafer and a front electrical connection track on the frontside of the wafer, the back track and the front track being connected by the electrical connection via.
  • the process may comprise: placing the passive component such that the plates extend perpendicularly to the receiving surface, then selectively connecting at least some of the lands of the conductive plates to the chip.
  • the process may comprise: placing the passive component such that the plates extend parallel to the receiving surface.
  • the process may comprise: placing a passive component having a dielectric plate on the receiving surface, then forming at least one additional conductive plate on the frontside of this dielectric plate so as to form a capacitor comprising this conductive plate and the adjacent conductive plate of the passive component, which are separated by this first dielectric plate.
  • a semiconductor device which comprises a wafer having a frontside and comprising at least one integrated circuit chip having an electrical connection frontside, at least one passive component having a frontside and comprising conductive plates separated by dielectric plates, forming capacitors, and an encapsulation block in which the integrated circuit chip and the passive component are embedded, a frontside of the encapsulation block, the frontside of the integrated circuit chip and the frontside of the passive component forming the frontside of the wafer, and an electrical connection means connecting at least some of the conductive plates and the integrated circuit chip, the electrical connection means being formed on the frontside of the wafer and/or on the backside of the wafer through the encapsulation block and on the frontside of the wafer.
  • the passive component may comprise plates which extend perpendicularly to the frontside of the wafer, the electrical connection means being connected to the lands of the conductive plates.
  • the plates may extend through the thickness of the wafer.
  • the passive component may comprise plates which extend parallel to the frontside of the wafer.
  • the passive component may comprise a dielectric plate adjacent to the frontside of the wafer, at least one conductive plate being formed on the frontside of this dielectric plate.
  • FIG. 1 shows a cross section of a semiconductor device
  • FIG. 2 shows a front view of the semiconductor device in FIG. 1 , without a surface layer
  • FIG. 3 shows a perspective view of a passive component of the semiconductor device in FIG. 1 ;
  • FIG. 4 shows the semiconductor device in FIG. 1 , according to one fabrication step
  • FIG. 5 shows the semiconductor device in FIG. 1 , according to another fabrication step
  • FIG. 6 shows the semiconductor device in FIG. 1 , according to another fabrication step
  • FIG. 7 shows the semiconductor device in FIG. 1 , according to another fabrication step
  • FIG. 8 shows a cross section of another semiconductor device
  • FIG. 9 shows a front view of the semiconductor device in FIG. 8 , without a surface layer
  • FIG. 10 shows a perspective view of a passive component of the semiconductor device in FIG. 8 ;
  • FIG. 11 shows the semiconductor device in FIG. 8 , according to one fabrication step
  • FIG. 12 shows the semiconductor device in FIG. 8 , according to another fabrication step
  • FIG. 13 shows the semiconductor device in FIG. 8 , according to another fabrication step.
  • FIG. 14 shows the semiconductor device in FIG. 8 , according to another fabrication step.
  • a semiconductor device 1 illustrated in FIGS. 1 to 3 comprises a wafer 2 which has a frontside 3 and a backside 4 , in parallel.
  • the wafer 2 comprises a block of a dielectric encapsulation material 5 in which a prefabricated integrated circuit chip 6 and a prefabricated passive component 7 are embedded, these being placed so that a frontside 8 of the chip 6 , in which the integrated circuits are formed and which has electrical connection pads, a frontside 9 of the passive component 7 and a frontside 10 of the encapsulation block 5 are in the same plane forming the frontside 3 of the wafer 2 , the passive component 7 being placed at a distance to the side of the chip 6 .
  • the frontside 8 of the chip 6 and the frontside 9 of the passive component 7 are not covered by the encapsulation block 5 .
  • the passive component 7 comprises a plurality of superposed plates, which are placed parallel to the frontside 3 of the wafer 2 .
  • the passive component 7 comprises in succession, in the thickness direction of the wafer 2 , a dielectric plate 11 having the aforementioned side 9 , a conductive plate 12 , a dielectric plate 13 and a conductive plate 14 , the conductive plates 12 and 14 being for example metallic.
  • the plate 12 completely covers the plate 11
  • the plate 13 does not completely cover the plate 12
  • the plate 14 completely covers the plate 13
  • the conductive plate 14 being, in the example shown, distant from the backside 4 of the wafer 2 .
  • two conductive front plates 15 and 16 are formed, which are connected to electrical connection pads on the frontside 8 of the chip 6 by front electrical connection tracks 17 and 18 , the conductive plates 15 and 16 being located on the frontside 9 of the dielectric plate 11 and being distant from each other.
  • the conductive front plates 15 and 16 have the same thickness as the front electrical connection tracks 17 and 18 .
  • holes 19 and 20 are provided in the encapsulation block 5 , which are filled with a conductive material so as to form electrical connection vias 21 and 22 .
  • the passive component 7 could have the same thickness as the wafer 2 .
  • the electrical connection via 22 could be omitted.
  • through-holes 23 and 24 are provided in the encapsulation block 5 and are filled with a conductive material so as to form electrical connection vias 25 and 26 .
  • front electrical connection tracks 27 and 28 are formed connecting the vias 25 and 26 , respectively, to electrical connection pads on the frontside 8 of the chip 6 and, on the backside 4 of the wafer 2 , back electrical connection tracks 29 and 30 are formed connecting the vias 21 and 22 to the vias 25 and 26 , respectively.
  • the passive component 7 defines three capacitors connected to the chip 6 , namely a first capacitor C 1 comprising the conductive plate 12 and the conductive plate 15 which are separated by the dielectric plate 11 , a second capacitor C 2 comprising the conductive plate 12 and the conductive plate 16 which are separated by the dielectric plate 11 , and a third capacitor C 3 comprising the conductive plates 12 and 14 which are separated by the dielectric plate 13 .
  • a dielectric layer 31 is provided, incorporating an electrical connection network 32 allowing electrical connection pads, on the frontside 8 of the chip 6 , and external electrical connection bumps 33 , placed on a frontside of the layer 31 , to be selectively connected.
  • a protective dielectric layer 34 is provided on the backside 4 of the wafer 2 , covering the electrical connection tracks 29 and 30 .
  • the semiconductor device 1 may be produced in the following way, by suitably employing means used in the microelectronics field.
  • chips 6 and passive components 7 are placed, their frontsides 8 and 9 being placed against the receiving surface 36 , the receiving surface 36 being for example self-adhesive.
  • an encapsulation layer 38 is formed on the receiving surface 36 of the carrier 37 , embedding the chips 6 and the passive components 7 and layer 38 is then leveled or thinned, for example as far as the backside of the chips 6 , so as to obtain a large reconstituted wafer 39 forming, respectively in the locations 35 , encapsulation blocks 5 holding chips 6 and passive components 7 .
  • holes 19 , 20 , 23 and 24 are produced, respectively in the locations 35 , and in the encapsulation layer 38 and these holes are filled with a conductive material so as to form vias 21 , 22 , 25 and 26 , respectively, in the encapsulation blocks 5 .
  • the layer 31 is produced on the frontside 3 of the wafer 2 , incorporating therein, respectively in the locations 35 , and on the same metallization level, the conductive plates 15 and 16 , the front electrical connection tracks 17 , 18 , 27 and 28 , and the electrical connection network 32 .
  • An intermediate dielectric layer could be formed directly on the frontside of the wafer 2 , the conductive plates 15 and 16 , the front electrical connection tracks 17 , 18 , 27 and 28 and the electrical connection network 32 then being produced on this intermediate dielectric layer and passing through the latter in places where electrical connection is required.
  • the electrical connection network 32 could nevertheless comprise several metallic levels.
  • the layer 34 is produced, incorporating therein, in the locations 35 respectively, and on the same metallization level, the back electrical connection tracks 29 and 30 .
  • the electrical connection bumps 33 are placed on the front layer 31 .
  • the large wafer 39 obtained is singulated, along the edges of the location 35 , for example by sawing, so as to obtain a plurality of semiconductor devices 1 .
  • the capacitances of the capacitors C 1 and C 2 are defined, especially by choosing the areas of these plates 15 and 16 .
  • one or more capacitors could be produced by forming one or more conductive plates on the frontside 3 , at the same time as one or more tracks for electrical connection to the chip 6 .
  • FIGS. 8-10 Another semiconductor device 50 , illustrated in FIGS. 8-10 , comprises a wafer 51 which has a frontside 52 and a backside 53 , in parallel.
  • the wafer 51 comprises a block of an encapsulation material 54 in which a prefabricated integrated circuit chip 55 and a prefabricated passive component 56 are embedded, these being placed so that an electrical connection frontside 57 of the chip 55 , a frontside 58 of the passive component 56 , and a frontside 59 of the encapsulation block 5 are in the same plane formed by the frontside 52 of the wafer 51 , the passive component 56 being placed at a distance to the side of the chip 55 .
  • the passive component 56 comprises a plurality of superposed plates, placed perpendicular to the frontside 52 of the wafer 51 .
  • the passive component 56 comprises four parallel, for example metallic, conductive plates 60 , 61 , 62 and 63 , separated by three dielectric plates 64 , 65 and 66 , so as to form three capacitors C 10 , C 11 and C 12 .
  • the conductive plates 60 - 63 and the dielectric plates 64 - 66 are placed so as to have front lands which form the side 58 of the passive component 56 in the plane of the frontside 57 of the wafer 51 , and opposite back lands which are in the plane of the backside 53 of the wafer 51 , the conductive plates 60 - 63 and the dielectric plates 64 - 66 consequently having, between these opposite lands, a width corresponding to the thickness of the wafer 51 .
  • the capacitors C 10 -C 12 may be connected to the chip 55 in the following way.
  • front electrical connection tracks 67 , 68 and 69 may be formed on the frontside 52 of the wafer 51 so as to connect the front lands of the conductive plates 60 , 61 and 62 to front pads of the chip 55 , by extending onto these front lands and onto these pads, so that the capacitors C 10 and C 11 are connected to the chip 55 by the front tracks 67 and 68 and by the front tracks 68 and 69 , respectively.
  • the encapsulation block 54 may have a through-hole 70 filled with a material forming an electrical connection via 71 , a front electrical connection track 72 possibly being formed on the frontside 52 of the wafer 51 so as to connect the via 71 and a front pad of the chip 55 , by extending over this via and this pad, and a back electrical connection track 73 possibly being formed on the backside 53 of the wafer 51 so as to connect the via 71 and the back land of the conductive plate 63 , by extending over this via and this land, so that the capacitor C 12 is connected to the chip 55 by the via 71 , the front electrical connection track 72 and the back electrical connection track 73 .
  • a dielectric layer 74 is provided, incorporating an electrical connection network 75 allowing electrical connection pads, on the frontside 57 of the chip 55 , and external electrical connection bumps 76 , placed on a frontside of the layer 74 , to be selectively connected.
  • a protective dielectric layer 77 is provided on the backside 53 of the wafer 51 , covering the backside of the passive component 56 and the back electrical connection track 73 .
  • the semiconductor device 50 may be produced in the following way.
  • chips 55 and passive components 56 are placed, their frontsides 57 and 58 being placed against the receiving surface 79 , the receiving surface 79 being for example self-adhesive.
  • an encapsulation layer 81 is formed on the receiving surface 79 of the carrier 80 , embedding the chips 55 and the passive components 56 and the layer 81 is then leveled or thinned, until the backsides of the passive components 56 are exposed, so as to obtain a large reconstituted wafer 82 forming, respectively in the locations 78 , encapsulation blocks 54 holding chips 55 and passive components 56 .
  • a hole 70 is produced, respectively in the locations 78 , in the encapsulation layer 81 and this hole 70 is filled with a conductive material so as to form the via 71 , respectively, in the encapsulation blocks 54 .
  • front electrical connection tracks 67 , 68 , 69 and 72 and the network 75 are produced, respectively in the locations 78 , in the dielectric front layer 74 and, on the other hand, the back electrical connection track 73 is produced in the dielectric back layer 77 .
  • the large wafer 82 obtained is singulated, along the edges of the locations 78 , for example by sawing, so as to obtain a plurality of semiconductor devices 50 .
  • a semiconductor device could comprise a passive component some of the capacitors of which would be connected in series or in parallel, so as to create a resultant capacitor connected to the chip.
  • a semiconductor device could comprise a passive component at least one of the capacitors of which would be directly connected to one of the external electrical connection bumps.
  • a semiconductor device could comprise a passive component at least one of the capacitors of which would be directly connected to another semiconductor device, for example stacked on its backside.

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Abstract

A semiconductor device includes a wafer having a frontside and a backside. The wafer is formed from at least one integrated circuit chip having an electrical connection frontside co-planar with the wafer frontside and a backside co-planar with the wafer backside. A passive component including at least one conductive plate and a dielectric plate is positioned adjacent the integrated circuit chip. An encapsulation block embeds the integrated circuit chip and the passive component, the block having a frontside co-planar with the wafer frontside and a backside co-planar with the wafer backside. An electrical connection is made between the electrical connection frontside and the passive component. That electrical connection includes connection lines placed on the wafer frontside and wafer backside. The electrical connection further includes at least one via passing through the encapsulation block.

Description

    PRIORITY CLAIM
  • This application is a divisional application of U.S. application patent Ser. No. 13/179,640 filed on Jul. 11, 2011, which claims priority from French Application for Patent No. 1056159 filed Jul. 27, 2010, the disclosures of which are hereby incorporated by reference.
    • TECHNICAL FIELD
  • This disclosure relates to the field of semiconductor devices.
    • BACKGROUND
  • It is known to produce reconstituted wafers comprising, in locations, integrated circuit chips embedded in an encapsulation material and to saw these wafers so as to form individual semiconductor devices.
  • Nevertheless, it is not possible at the present time to integrate into the wafers, near the chips, capacitors such as those currently used, especially due to their shape and their electrical connection means.
    • SUMMARY
  • A process for fabricating a semiconductor device is provided.
  • This process comprises: placing, in at least one location on a receiving surface of a carrier, an electrical connection frontside of at least one integrated circuit chip and a frontside of at least one passive component comprising conductive plates separated by dielectric plates forming capacitors; forming on the receiving surface a layer of an encapsulation material so as to obtain, in the location, a wafer comprising an encapsulation block in which the chip and the passive component are embedded and having a frontside comprising the frontside of the chip and the frontside of the passive component; then selectively connecting at least some of the conductive plates to the chip, so that at least some of the capacitors are connected to the chip.
  • It is thus possible to prefabricate a passive component having a simple structure, to integrate it into the encapsulation block, and then to form one or more capacitors, as required, when electrical connections are made to the chip.
  • The process may comprise: forming at least one front electrical connection track on the frontside of the wafer.
  • The process may comprise: forming at least one back electrical connection track on the backside of the wafer, an electrical connection via through the wafer and a front electrical connection track on the frontside of the wafer, the back track and the front track being connected by the electrical connection via.
  • The process may comprise: placing the passive component such that the plates extend perpendicularly to the receiving surface, then selectively connecting at least some of the lands of the conductive plates to the chip.
  • The process may comprise: placing the passive component such that the plates extend parallel to the receiving surface.
  • The process may comprise: placing a passive component having a dielectric plate on the receiving surface, then forming at least one additional conductive plate on the frontside of this dielectric plate so as to form a capacitor comprising this conductive plate and the adjacent conductive plate of the passive component, which are separated by this first dielectric plate.
  • A semiconductor device is also provided, which comprises a wafer having a frontside and comprising at least one integrated circuit chip having an electrical connection frontside, at least one passive component having a frontside and comprising conductive plates separated by dielectric plates, forming capacitors, and an encapsulation block in which the integrated circuit chip and the passive component are embedded, a frontside of the encapsulation block, the frontside of the integrated circuit chip and the frontside of the passive component forming the frontside of the wafer, and an electrical connection means connecting at least some of the conductive plates and the integrated circuit chip, the electrical connection means being formed on the frontside of the wafer and/or on the backside of the wafer through the encapsulation block and on the frontside of the wafer.
  • The passive component may comprise plates which extend perpendicularly to the frontside of the wafer, the electrical connection means being connected to the lands of the conductive plates.
  • The plates may extend through the thickness of the wafer.
  • The passive component may comprise plates which extend parallel to the frontside of the wafer.
  • The passive component may comprise a dielectric plate adjacent to the frontside of the wafer, at least one conductive plate being formed on the frontside of this dielectric plate.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • Semiconductor devices will now be described by way of non-limiting example, illustrated by the drawings in which:
  • FIG. 1 shows a cross section of a semiconductor device;
  • FIG. 2 shows a front view of the semiconductor device in FIG. 1, without a surface layer;
  • FIG. 3 shows a perspective view of a passive component of the semiconductor device in FIG. 1;
  • FIG. 4 shows the semiconductor device in FIG. 1, according to one fabrication step;
  • FIG. 5 shows the semiconductor device in FIG. 1, according to another fabrication step;
  • FIG. 6 shows the semiconductor device in FIG. 1, according to another fabrication step;
  • FIG. 7 shows the semiconductor device in FIG. 1, according to another fabrication step;
  • FIG. 8 shows a cross section of another semiconductor device;
  • FIG. 9 shows a front view of the semiconductor device in FIG. 8, without a surface layer;
  • FIG. 10 shows a perspective view of a passive component of the semiconductor device in FIG. 8;
  • FIG. 11 shows the semiconductor device in FIG. 8, according to one fabrication step;
  • FIG. 12 shows the semiconductor device in FIG. 8, according to another fabrication step;
  • FIG. 13 shows the semiconductor device in FIG. 8, according to another fabrication step; and
  • FIG. 14 shows the semiconductor device in FIG. 8, according to another fabrication step.
    •  DETAILED DESCRIPTION
  • A semiconductor device 1 illustrated in FIGS. 1 to 3 comprises a wafer 2 which has a frontside 3 and a backside 4, in parallel.
  • The wafer 2 comprises a block of a dielectric encapsulation material 5 in which a prefabricated integrated circuit chip 6 and a prefabricated passive component 7 are embedded, these being placed so that a frontside 8 of the chip 6, in which the integrated circuits are formed and which has electrical connection pads, a frontside 9 of the passive component 7 and a frontside 10 of the encapsulation block 5 are in the same plane forming the frontside 3 of the wafer 2, the passive component 7 being placed at a distance to the side of the chip 6. Thus, the frontside 8 of the chip 6 and the frontside 9 of the passive component 7 are not covered by the encapsulation block 5.
  • The passive component 7 comprises a plurality of superposed plates, which are placed parallel to the frontside 3 of the wafer 2. According to the example shown, the passive component 7 comprises in succession, in the thickness direction of the wafer 2, a dielectric plate 11 having the aforementioned side 9, a conductive plate 12, a dielectric plate 13 and a conductive plate 14, the conductive plates 12 and 14 being for example metallic. The plate 12 completely covers the plate 11, the plate 13 does not completely cover the plate 12 and the plate 14 completely covers the plate 13, the conductive plate 14 being, in the example shown, distant from the backside 4 of the wafer 2.
  • On the frontside 3 of the wafer 2, two conductive front plates 15 and 16 are formed, which are connected to electrical connection pads on the frontside 8 of the chip 6 by front electrical connection tracks 17 and 18, the conductive plates 15 and 16 being located on the frontside 9 of the dielectric plate 11 and being distant from each other. The conductive front plates 15 and 16 have the same thickness as the front electrical connection tracks 17 and 18.
  • Behind the plates 12 and 14, and between the plates 12 and 14 and the backside 4 of the wafer 2, holes 19 and 20 are provided in the encapsulation block 5, which are filled with a conductive material so as to form electrical connection vias 21 and 22.
  • According to one variant, the passive component 7 could have the same thickness as the wafer 2. In this case, the electrical connection via 22 could be omitted.
  • To the side of the chip 6 and the passive component 7, and between the frontside 3 and the backside 4 of the wafer 2, through- holes 23 and 24 are provided in the encapsulation block 5 and are filled with a conductive material so as to form electrical connection vias 25 and 26.
  • On the frontside 3 of the wafer 2, front electrical connection tracks 27 and 28 are formed connecting the vias 25 and 26, respectively, to electrical connection pads on the frontside 8 of the chip 6 and, on the backside 4 of the wafer 2, back electrical connection tracks 29 and 30 are formed connecting the vias 21 and 22 to the vias 25 and 26, respectively.
  • Thus, the passive component 7 defines three capacitors connected to the chip 6, namely a first capacitor C1 comprising the conductive plate 12 and the conductive plate 15 which are separated by the dielectric plate 11, a second capacitor C2 comprising the conductive plate 12 and the conductive plate 16 which are separated by the dielectric plate 11, and a third capacitor C3 comprising the conductive plates 12 and 14 which are separated by the dielectric plate 13.
  • On the frontside 3 of the wafer 2, and covering the conductive plates 15 and 16 and the electrical connection tracks 17, 18, 27 and 28, a dielectric layer 31 is provided, incorporating an electrical connection network 32 allowing electrical connection pads, on the frontside 8 of the chip 6, and external electrical connection bumps 33, placed on a frontside of the layer 31, to be selectively connected.
  • A protective dielectric layer 34 is provided on the backside 4 of the wafer 2, covering the electrical connection tracks 29 and 30.
  • The semiconductor device 1 may be produced in the following way, by suitably employing means used in the microelectronics field.
  • As illustrated in FIG. 4, in respective adjacent, for example square, locations 35 in a receiving surface 36 of a carrier 37, chips 6 and passive components 7 are placed, their frontsides 8 and 9 being placed against the receiving surface 36, the receiving surface 36 being for example self-adhesive.
  • As illustrated in FIG. 5, an encapsulation layer 38 is formed on the receiving surface 36 of the carrier 37, embedding the chips 6 and the passive components 7 and layer 38 is then leveled or thinned, for example as far as the backside of the chips 6, so as to obtain a large reconstituted wafer 39 forming, respectively in the locations 35, encapsulation blocks 5 holding chips 6 and passive components 7.
  • In FIG. 6, holes 19, 20, 23 and 24 are produced, respectively in the locations 35, and in the encapsulation layer 38 and these holes are filled with a conductive material so as to form vias 21, 22, 25 and 26, respectively, in the encapsulation blocks 5.
  • In FIG. 7 and more fully shown in FIG. 1, the layer 31 is produced on the frontside 3 of the wafer 2, incorporating therein, respectively in the locations 35, and on the same metallization level, the conductive plates 15 and 16, the front electrical connection tracks 17, 18, 27 and 28, and the electrical connection network 32. An intermediate dielectric layer could be formed directly on the frontside of the wafer 2, the conductive plates 15 and 16, the front electrical connection tracks 17, 18, 27 and 28 and the electrical connection network 32 then being produced on this intermediate dielectric layer and passing through the latter in places where electrical connection is required. Moreover, the electrical connection network 32 could nevertheless comprise several metallic levels.
  • On the backside 4 of the wafer 2, the layer 34 is produced, incorporating therein, in the locations 35 respectively, and on the same metallization level, the back electrical connection tracks 29 and 30.
  • The electrical connection bumps 33 are placed on the front layer 31.
  • Finally, the large wafer 39 obtained is singulated, along the edges of the location 35, for example by sawing, so as to obtain a plurality of semiconductor devices 1.
  • When the conductive front plates 15 and 16 are produced, at the same time as the front electrical connection tracks 17 and 18, the capacitances of the capacitors C1 and C2 are defined, especially by choosing the areas of these plates 15 and 16. Of course, one or more capacitors could be produced by forming one or more conductive plates on the frontside 3, at the same time as one or more tracks for electrical connection to the chip 6.
  • In addition, being provided with a prefabricated passive component comprising several capacitors, only some of the capacitors could be connected, as a function of the chip 6 used and of the requirements related to the operation and applications of the latter.
  • Another semiconductor device 50, illustrated in FIGS. 8-10, comprises a wafer 51 which has a frontside 52 and a backside 53, in parallel.
  • The wafer 51 comprises a block of an encapsulation material 54 in which a prefabricated integrated circuit chip 55 and a prefabricated passive component 56 are embedded, these being placed so that an electrical connection frontside 57 of the chip 55, a frontside 58 of the passive component 56, and a frontside 59 of the encapsulation block 5 are in the same plane formed by the frontside 52 of the wafer 51, the passive component 56 being placed at a distance to the side of the chip 55.
  • The passive component 56 comprises a plurality of superposed plates, placed perpendicular to the frontside 52 of the wafer 51. According to the example shown, the passive component 56 comprises four parallel, for example metallic, conductive plates 60, 61, 62 and 63, separated by three dielectric plates 64, 65 and 66, so as to form three capacitors C10, C11 and C12.
  • The conductive plates 60-63 and the dielectric plates 64-66 are placed so as to have front lands which form the side 58 of the passive component 56 in the plane of the frontside 57 of the wafer 51, and opposite back lands which are in the plane of the backside 53 of the wafer 51, the conductive plates 60-63 and the dielectric plates 64-66 consequently having, between these opposite lands, a width corresponding to the thickness of the wafer 51.
  • By way of example, the capacitors C10-C12 may be connected to the chip 55 in the following way.
  • For example, front electrical connection tracks 67, 68 and 69 may be formed on the frontside 52 of the wafer 51 so as to connect the front lands of the conductive plates 60, 61 and 62 to front pads of the chip 55, by extending onto these front lands and onto these pads, so that the capacitors C10 and C11 are connected to the chip 55 by the front tracks 67 and 68 and by the front tracks 68 and 69, respectively.
  • Furthermore, the encapsulation block 54 may have a through-hole 70 filled with a material forming an electrical connection via 71, a front electrical connection track 72 possibly being formed on the frontside 52 of the wafer 51 so as to connect the via 71 and a front pad of the chip 55, by extending over this via and this pad, and a back electrical connection track 73 possibly being formed on the backside 53 of the wafer 51 so as to connect the via 71 and the back land of the conductive plate 63, by extending over this via and this land, so that the capacitor C12 is connected to the chip 55 by the via 71, the front electrical connection track 72 and the back electrical connection track 73.
  • On the frontside 52 of the wafer 51, and covering the frontside of the passive component 56 and the front electrical connection tracks 67-69 and 72, a dielectric layer 74 is provided, incorporating an electrical connection network 75 allowing electrical connection pads, on the frontside 57 of the chip 55, and external electrical connection bumps 76, placed on a frontside of the layer 74, to be selectively connected.
  • A protective dielectric layer 77 is provided on the backside 53 of the wafer 51, covering the backside of the passive component 56 and the back electrical connection track 73.
  • The semiconductor device 50 may be produced in the following way.
  • In FIG. 11, in respective adjacent locations 78 (e.g., squares) in a receiving surface 79 of a carrier 80, chips 55 and passive components 56 are placed, their frontsides 57 and 58 being placed against the receiving surface 79, the receiving surface 79 being for example self-adhesive.
  • In FIG. 12, an encapsulation layer 81 is formed on the receiving surface 79 of the carrier 80, embedding the chips 55 and the passive components 56 and the layer 81 is then leveled or thinned, until the backsides of the passive components 56 are exposed, so as to obtain a large reconstituted wafer 82 forming, respectively in the locations 78, encapsulation blocks 54 holding chips 55 and passive components 56.
  • In FIG. 13, a hole 70 is produced, respectively in the locations 78, in the encapsulation layer 81 and this hole 70 is filled with a conductive material so as to form the via 71, respectively, in the encapsulation blocks 54.
  • In FIG. 14 and more fully shown in FIG. 8, and in a way equivalent to that described above, with reference to FIGS. 1 and 7, in relation to the device 1, on the one hand, front electrical connection tracks 67, 68, 69 and 72 and the network 75 are produced, respectively in the locations 78, in the dielectric front layer 74 and, on the other hand, the back electrical connection track 73 is produced in the dielectric back layer 77.
  • Then the bumps 76 are placed in each location 7.
  • Finally, the large wafer 82 obtained is singulated, along the edges of the locations 78, for example by sawing, so as to obtain a plurality of semiconductor devices 50.
  • In the two examples described, being provided with a prefabricated passive component comprising several capacitors, only some of the capacitors could be connected, as a function of the chip 55 used and of the requirements related to the operation and applications of the latter.
  • According to a variant embodiment, a semiconductor device could comprise a passive component some of the capacitors of which would be connected in series or in parallel, so as to create a resultant capacitor connected to the chip.
  • According to a variant embodiment, a semiconductor device could comprise a passive component at least one of the capacitors of which would be directly connected to one of the external electrical connection bumps.
  • According to a variant embodiment, a semiconductor device could comprise a passive component at least one of the capacitors of which would be directly connected to another semiconductor device, for example stacked on its backside.
  • This disclosure is not limited to the examples described above. Many other variant embodiments are possible without departing from the scope defined by the appended claims.

Claims (20)

What is claimed is:
1. A process for fabricating a semiconductor device, comprising:
placing, in at least one location on a receiving surface of a carrier, an electrical connection frontside of at least one integrated circuit chip and a frontside of at least one passive component comprising at least one conductive plate and a dielectric plate for forming a capacitor;
forming on the receiving surface a layer of an encapsulation material so as to obtain, in the location, a wafer comprising an encapsulation block in which the chip and the passive component are embedded and having a frontside comprising the frontside of the chip and the frontside of the passive component;
then selectively connecting the at least one conductive plate to the chip, so that the capacitor is connected to the chip.
2. The process according to claim 1, further comprising forming at least one front electrical connection track on the frontside of the wafer.
3. The process according to claim 2, further comprising:
forming at least one back electrical connection track on the backside of the wafer; and
forming an electrical connection via through the wafer and forming a front electrical connection track on the frontside of the wafer, the back track and the front track being connected by the electrical connection via.
4. The process according to claim 1, further comprising placing the passive component such that the at least one conductive plate extends perpendicular to the receiving surface, then selectively connecting an edge of the at least one conductive plate to the chip.
5. The process according to claim 1, further comprising placing the passive component such that the at least one plate extends parallel to the receiving surface.
6. The process according to claim 5, further comprising:
placing the passive component having a dielectric plate on the receiving surface; and
forming at least one additional conductive plate on the frontside of this dielectric plate so as to form the capacitor comprising the additional conductive plate and the at least one conductive plate separated by the first dielectric plate.
7. A process comprising:
placing an electrical connection frontside of an integrated circuit chip on a receiving surface of a carrier;
placing a capacitive structure comprising at least one conductive plate and at least one dielectric plate on the receiving surface of the carrier adjacent to the integrated circuit chip;
providing an encapsulating material layer surrounding the integrated circuit chip and the capacitive structure, the encapsulating material layer having a backside co-planar with a backside of the integrated circuit chip;
forming an electrical connection between the electrical connection frontside of the integrated circuit chip and the at least one conductive plate of the capacitive structure, the electrical connection comprising a via passing through the encapsulating material layer and a connection line formed on the backside of the encapsulating material layer.
8. The process of claim 7, wherein placing the capacitive structure comprises orienting the at least one conductive plate parallel to the receiving surface of the carrier.
9. The process of claim 8, wherein forming the electrical connection further comprises another via passing through the encapsulating material layer between the connection line formed on the backside of the encapsulating material layer and the at least one conductive plate.
10. The process of claim 9, further comprising:
removing the carrier, the electrical connection frontside of the integrated circuit chip being co-planar with a frontside of the encapsulating material layer;
forming another conductive plate and another electrical connection between the electrical connection frontside of the integrated circuit chip and the another conductive plate, the another electrical connection comprising a connection line formed on the frontside of the encapsulating material layer.
11. The process of claim 7, wherein placing the capacitive structure comprises orienting the at least one conductive plate perpendicular to the receiving surface of the carrier.
12. The process of claim 11, wherein forming the electrical connection further comprises making an electrical connection between the connection line formed on the backside of the encapsulating material layer and an edge of the at least one conductive plate.
13. The process of claim 12, wherein the capacitive structure comprises an another conductive plate oriented perpendicular to the receiving surface of the carrier, further comprising:
removing the carrier, the electrical connection frontside of the integrated circuit chip being co-planar with a frontside of the encapsulating material layer;
forming another electrical connection between the electrical connection frontside of the integrated circuit chip and the another conductive plate, the another electrical connection comprising a connection line formed on the frontside of the encapsulating material layer.
14. The process of claim 13, wherein forming the another electrical connection further comprises making an electrical connection between the connection line formed on the frontside of the encapsulating material layer and an edge of the another conductive plate.
15. A method for fabricating a device having a passive component having at least one capacitor, the method comprising:
placing a frontside of an integrated circuit chip and a frontside of the capacitor in at least one location on a receiving surface of a carrier;
encapsulating the receiving surface, the integrated circuit chip, and the capacitor in an encapsulation layer to define an encapsulated structure having a front surface and a back surface;
exposing a backside of at least one plate of the capacitor; and
electrically connecting the backside of the capacitor plate to the frontside of integrated circuit chip using one or more vias which extend through the encapsulation layer at a location between the integrated circuit chip and the passive component.
16. The method of claim 15, wherein electrically connecting comprises:
forming a first conductive track on the front surface between the integrated circuit chip and the via; and
forming a second conductive track on the back surface between the via and the backside of the at least one plate of the capacitor.
17. The method of claim 16, further comprising forming an additional via between the second conductive track and the backside of the at least one plate of the capacitor.
18. The method of claim 15, further comprising singulating the device from a wafer-scale production of multiple same devices.
19. The method of claim 15, wherein the capacitor is oriented with the plate parallel to the front and back surfaces.
20. The method of claim 15, wherein the capacitor is oriented with the plate perpendicular to the front and back surfaces.
US14/221,921 2010-07-27 2014-03-21 Semiconductor device comprising a passive component of capacitors and process for fabrication Abandoned US20140206154A1 (en)

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US13/179,640 US9029928B2 (en) 2010-07-27 2011-07-11 Semiconductor device comprising a passive component of capacitors and process for fabrication
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US20120025348A1 (en) 2012-02-02

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