US20140202382A1 - Deposition apparatus - Google Patents

Deposition apparatus Download PDF

Info

Publication number
US20140202382A1
US20140202382A1 US14/157,626 US201414157626A US2014202382A1 US 20140202382 A1 US20140202382 A1 US 20140202382A1 US 201414157626 A US201414157626 A US 201414157626A US 2014202382 A1 US2014202382 A1 US 2014202382A1
Authority
US
United States
Prior art keywords
supporting pin
substrate
deposition apparatus
pin cover
cover
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US14/157,626
Inventor
Young-Jae Kim
Ki Jong Kim
Dong-Rak Jung
Hak Yong Kwon
Seung Woo Choi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASM IP Holding BV
Original Assignee
ASM IP Holding BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASM IP Holding BV filed Critical ASM IP Holding BV
Assigned to ASM IP HOLDING B.V. reassignment ASM IP HOLDING B.V. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHOI, SEUNG WOO, JUNG, DONG-RAK, KIM, KI JONG, KIM, YOUNG-JAE, KWON, HAK YONG
Publication of US20140202382A1 publication Critical patent/US20140202382A1/en
Priority to US15/945,863 priority Critical patent/US20180223424A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

Definitions

  • the present invention relates to a deposition apparatus.
  • a substrate supporting pin (or substrate lift pin) is used in a deposition apparatus for depositing a film on a silicon substrate, in order to load or unload the substrate before and after the process.
  • the substrate supporting pin is inserted into a substrate support where the substrate is loaded, and moves vertically to load or unload the substrate.
  • the substrate supporting pin moves down to cause the substrate to be loaded on the support substrate, an empty space is formed between the substrate and the substrate supporting pin, within a supporting pinhole into which the substrate supporting pin is inserted.
  • empty space has lower thermal conductivity compared to other areas supporting the substrate by the substrate support
  • the uniformity of a thin film may be declined due to a temperature difference between the empty space and the other areas supporting the substrate when the thin film is formed on the substrate.
  • parasitic plasma may be generated in this empty space, and this may form an unnecessary thin film on the opposite side of the substrate surface where the process is performed.
  • process gas may move into the empty space and act as contaminating particles, thus lowering the quality of the thin film.
  • the present invention has been made in an effort to provide a deposition apparatus for loading and unloading a substrate using a substrate supporting pin, which is able to maintain the temperature under the substrate constant and prevent generation of parasitic plasma or contaminating particles by eliminating unnecessary empty spaces within a supporting pin hole formed in the substrate support.
  • An exemplary embodiment of the present invention provides a deposition apparatus including: a substrate support; a substrate supporting pin inserted into a hole formed in the substrate support; a supporting plate supporting the substrate supporting pin; and a supporting pin cover arranged on top of the substrate supporting pin within the hole of the substrate support.
  • the upper surface of the supporting pin cover may be almost the same height as the upper surface of the substrate support.
  • the upper surface of the supporting pin cover may have almost the same cross-sectional area as the hole.
  • the supporting pin cover may further include a lower body located under the upper surface of the supporting pin cover and having an insertion hole, and the insertion hole may have almost the same cross-sectional area as the supporting pin.
  • the upper surface of the supporting pin may be concave or convex
  • the insertion hole of the supporting pin cover may be convex or concave so as to engage with a concavity or convexity on the upper surface of the supporting pin.
  • a coupling slot having a smaller cross-sectional area than the supporting pin may be formed in the upper surface of the supporting pin, and a coupling projection having almost the same cross-sectional area as the coupling slot may be formed on the lower surface of the supporting pin cover.
  • a coupling projection having a smaller cross-sectional area than the supporting pin may be formed on the upper surface of the supporting pin, and a coupling slot having almost the same cross-sectional area as the coupling projection may be formed in the lower surface of the supporting pin cover.
  • the supporting pin cover may further include a lower surface having almost the same cross-sectional area as the hole.
  • a plurality of through holes may be formed in the upper surface of the supporting pin cover.
  • the substrate support may further include a projecting portion in the supporting pin hole, and the projecting portion may take the form of a plate-like circle surrounding the supporting pin cover in a circle or the form of a plurality of protuberances arranged around the supporting pin cover.
  • a deposition apparatus can eliminate unnecessary empty spaces between a substrate and a substrate supporting pin, which may be formed within a supporting pin hole, by covering the substrate supporting pin, inserted into the supporting pin hole formed in the substrate support, by a substrate supporting pin cover loaded on the substrate support. Accordingly, the temperature under the substrate can be maintained constant, and generation of parasitic plasma or contaminating particles can be avoided.
  • FIG. 1 is a cross-sectional view showing a deposition apparatus according to an exemplary embodiment of the present invention.
  • FIG. 2 is a cross-sectional view showing part of a deposition apparatus according to one exemplary embodiment of the present invention.
  • FIG. 3 and FIG. 4 are views showing a substrate supporting pin cover of a deposition apparatus according to an exemplary embodiment of the present invention.
  • FIG. 5 and FIG. 6 are views showing a substrate supporting pin cover of a deposition apparatus according to another exemplary embodiment of the present invention.
  • FIG. 7 to FIG. 12 are views showing examples of a substrate supporting pin and a substrate supporting pin cover of a deposition apparatus according to exemplary embodiments of the present invention.
  • FIG. 1 is a cross-sectional view showing a deposition apparatus according to an exemplary embodiment of the present invention.
  • the deposition apparatus includes an outer wall 100 , a plurality of gas passage pipes 110 , a reaction chamber wall 120 , a substrate support 130 , a reaction chamber plate 140 defining a reaction space together with the substrate support 130 , a heating plate 160 for heating the substrate support 130 , a substrate supporting pin 31 inserted into a hole formed in the substrate support 130 and the heating plate 160 , a substrate supporting pin cover 32 located on top of the substrate supporting pin 31 , and substrate support actuators 33 and 34 .
  • a substrate 131 for deposition is arranged on top of the substrate support 130 , and the heating plate 160 is arranged under the substrate support 130 .
  • the heating plate 160 serves to increase the substrate temperature up to a level required for a process, and may be omitted.
  • the substrate support actuator for actuating the substrate support 130 to load and unload the substrate 131 includes a vertical actuator 33 for controlling vertical movement of the substrate supporting pin 31 , which is inserted into the hole formed in the substrate support 130 and supports the substrate, the substrate supporting pin cover 32 , and the substrate support 130 , and a rotational actuator 34 for controlling rotation of the substrate support 130 .
  • a vertical actuator 33 for controlling vertical movement of the substrate supporting pin 31 , which is inserted into the hole formed in the substrate support 130 and supports the substrate, the substrate supporting pin cover 32 , and the substrate support 130
  • a rotational actuator 34 for controlling rotation of the substrate support 130 .
  • a variety of means, such as a pneumatic cylinder, for controlling the vertical movement of the substrate support 130 may be used as the vertical actuator 33 .
  • the substrate supporting pin 31 can be supported by a supporting plate 101 which is formed under the substrate supporting pin 31 .
  • a variety of means, such as a rotary motor, for controlling the rotary movement of the substrate support 130 can be used as the rotational actuator
  • the vertical movement of the substrate support 130 for loading or unloading the substrate 131 will be explained.
  • the substrate support 130 and the heating plate 160 which are connected to the vertical actuator 33 , move down before and after a deposition process, the reaction chamber wall 120 and the substrate support 130 are separated from each other and the reaction chamber is therefore opened.
  • the substrate 131 can be loaded inside the reaction chamber or unloaded outside the reaction chamber.
  • the substrate supporting pin 31 and the supporting pin cover 32 are separated from the substrate support 130 and support the substrate 131 .
  • the substrate supporting pin 31 and the supporting pin cover 32 rise or fall by the vertical movement of the supporting plate 101 , and allow the substrate 131 to be unloaded from the substrate support 130 or loaded on the substrate support 130 .
  • FIG. 2 is a cross-sectional view showing part of a deposition apparatus according to one exemplary embodiment of the present invention.
  • the substrate supporting pin 31 is inserted into a supporting pin hole which penetrates the substrate support 130 and the heating plate 160 located under the substrate support 130 .
  • the substrate supporting pin 31 is arranged lower than the substrate support 130 , and the supporting pin cover 32 is arranged on top of the substrate supporting pin 31 .
  • the supporting pin cover 32 is made of a highly heat-conductive material.
  • the supporting pin cover 32 may be made of aluminum, titanium, nickel, or the same material as the substrate support 130 .
  • the upper surface of the supporting pin cover 32 is the same height as the upper surface of the substrate support 130 . Thus, no empty space is formed between the bottom surface of the substrate 131 where the substrate support 130 is loaded, the substrate support 130 , and the supporting pin cover 32 .
  • the supporting pin cover 32 is made of a highly heat-conductive material, the heat from the heating plate 160 can be properly transferred to the substrate 131 . Accordingly, a temperature difference between the area with the supporting pin hole formed in the substrate support 130 and other areas can be avoided.
  • the surface temperature of the substrate 131 loaded on the substrate support 130 can be maintained constant over the entire surface, and this can prevent local non-uniformity in deposition rate and thin film characteristics, caused by the temperature difference, and increase the uniformity of a thin film to be formed on the substrate 131 .
  • FIG. 3 and FIG. 4 are views showing a substrate supporting pin cover of a deposition apparatus according to an exemplary embodiment of the present invention.
  • the substrate supporting pin 31 has an upper surface having a relatively large cross-sectional area and a lower surface having a relatively small cross-sectional area.
  • the substrate supporting pin 32 includes a lower surface where a recess for covering the upper surface of the substrate supporting pin 31 is formed, and an upper surface which has the same area as the supporting pin hole of the substrate support 130 . According to this structure, if the substrate 131 is loaded on the substrate support 130 , the upper part of the supporting pin hole of the substrate support 130 is blocked by the supporting pin cover 32 . Accordingly, no empty space is formed on the back side of the substrate 131 loaded on the substrate support 130 .
  • a plurality of through holes is formed in the upper surface of the supporting pin cover 32 .
  • the through holes provide passages through which process gases which may be flowed into during the process or inactive purge gases pass, thereby preventing the substrate supporting pin 31 and the supporting pin cover 32 from being separated during the process or during the loading or unloading of the substrate 131 and allowing them to be firmly attached to each other.
  • FIG. 5 and FIG. 6 are views showing a substrate supporting pin cover of a deposition apparatus according to another exemplary embodiment of the present invention.
  • the substrate supporting pin 31 has an upper surface having a relatively large cross-sectional area and a lower surface having a relatively small cross-sectional area.
  • the substrate supporting pin cover 32 includes a lower surface where a recess for covering the upper surface of the substrate supporting pin 31 is formed and which has the same area as a supporting pin hole of the substrate support 130 , and an upper surface which has the same area as the supporting pin hole of the substrate support 130 .
  • the upper and lower surfaces of the supporting pin cover 32 are coupled together through a central part having a smaller area than the supporting pin hole. According to this structure, if the substrate 131 is loaded on the substrate support 130 , the upper part of the supporting pin hole of the substrate support 130 is blocked by the supporting pin cover 32 . Accordingly, no empty space is formed on the back side of the substrate 131 loaded on the substrate support 130 .
  • a projecting portion 13 is formed on the substrate support 130 as shown in FIG. 5 .
  • the projecting portion 13 is located within the supporting pin hole.
  • the projecting portion 13 of the substrate support 130 is arranged corresponding in position to the central part having a small area between the upper surface and the lower surface, and therefore serves to fix the supporting pin cover 32 so as to not deviate outward.
  • the projecting portion 13 of the substrate support 130 supports the lower surface of the supporting pin cover 32 to prevent the supporting pin cover 32 from moving up and deviating unnecessarily. Accordingly, the substrate supporting pin 31 located under the supporting pin cover 32 is also kept from moving upward and deviating unnecessarily.
  • the projecting portion 13 of the substrate support 130 supports the upper surface of the supporting pin cover 32 , thereby preventing the supporting pin cover 32 from moving downward unnecessarily.
  • the projecting portion 13 may take the form of a plate-like circle so as to surround the supporting pin cover 32 in a circle, or the form of a plurality of protuberances located around the supporting pin cover 32 so as to partially support the supporting pin cover 32 .
  • a plurality of through holes is formed in the upper surface of the supporting pin cover 32 .
  • the through holes provide passages through which process gases which may be flowed into during the process or inactive purge gases pass.
  • FIGS. 7 to 12 are views showing examples of a substrate supporting pin and a substrate supporting pin cover of a deposition apparatus according to exemplary embodiments of the present invention.
  • the substrate supporting pin 31 has an upper surface having a relatively large cross-sectional area and a lower surface having a relatively small cross-sectional area. Also, the upper surface of the substrate supporting pin 31 is concave.
  • the substrate supporting pin cover 32 includes a lower surface where a recess for covering the upper surface of the substrate supporting pin 31 is formed and which has the same area as a supporting pin hole of the substrate support 130 , and an upper surface which has the same area as the supporting pin hole of the substrate support 130 .
  • the recess of the supporting pin cover 32 is convex so as to engage with the concavity formed on the upper surface of the substrate supporting pin 31 . With this configuration, the substrate supporting pin 31 and the supporting pin cover 32 can be closely coupled together before and after the deposition process, while the substrate supporting pin 31 and the supporting pin cover 32 are supporting the substrate 131 .
  • the substrate supporting pin 31 has an upper surface having a relatively large cross-sectional area and a lower surface having a relatively small cross-sectional area. Also, the upper surface of the substrate supporting pin 31 is convex.
  • the substrate supporting pin cover 32 includes a lower surface where a recess for covering the upper surface of the substrate supporting pin 31 is formed and which has the same area as a supporting pin hole of the substrate support 130 , and an upper surface which has the same area as the supporting pin hole of the substrate support 130 .
  • the recess of the supporting pin cover 32 is concave so as to engage with the convexity formed on the upper surface of the substrate supporting pin 31 . With this configuration, the substrate supporting pin 31 and the supporting pin cover 32 can be closely coupled together before and after the deposition process, while the substrate supporting pin 31 and the supporting pin cover 32 are supporting the substrate 131 .
  • the substrate supporting pin 31 has an upper surface having a relatively large cross-sectional area and a lower surface having a relatively small cross-sectional area. Also, the center of the upper surface of the substrate supporting pin 31 is raised and has a triangular pyramid shape.
  • the substrate supporting pin cover 32 includes a lower surface where a recess for covering the upper surface of the substrate supporting pin 31 is formed and which has the same area as a supporting pin hole of the substrate support 130 , and an upper surface which has the same area as the supporting pin hole of the substrate support 130 .
  • the recess of the supporting pin cover 32 is concave in the shape of a triangular pyramid so as to engage with the triangular pyramid-like convexity formed on the upper surface of the substrate supporting pin 31 .
  • the substrate supporting pin 31 and the supporting pin cover 32 can be closely coupled together before and after the deposition process, while the substrate supporting pin 31 and the supporting pin cover 32 are supporting the substrate 131 .
  • the substrate supporting pin 31 and the supporting pin cover 32 can be closely coupled together before and after the deposition process, while the substrate supporting pin 31 and the supporting pin cover 32 are supporting the substrate 131 .
  • the substrate supporting pin 31 has an upper surface having a relatively large cross-sectional area and a lower surface having a relatively small cross-sectional area. Also, a coupling slot is formed at the center of the upper surface of the substrate supporting pin 31 .
  • the substrate supporting pin cover 32 includes a lower surface where a recess for covering the upper surface of the substrate supporting pin 31 is formed and which has the same area as a supporting pin hole of the substrate support 130 , and an upper surface which has the same area as the supporting pin hole of the substrate support 130 .
  • the recess of the supporting pin cover 32 has a coupling projection that is to be inserted into the coupling slot formed in the upper surface of the substrate supporting pin 31 .
  • the substrate supporting pin 31 and the supporting pin cover 32 can be closely coupled together before and after the deposition process, while the substrate supporting pin 31 and the supporting pin cover 32 are supporting the substrate 131 .
  • the substrate supporting pin 31 has a lower surface having a constant cross-sectional area and a coupling projection that projects at the center of the lower surface.
  • the substrate supporting pin cover 32 includes a lower surface which has the same area as a supporting pin hole of the substrate support 130 and an upper surface which has the same area as the supporting pin hole of the substrate support 130 .
  • a coupling slot for inserting the coupling projection of the substrate supporting pin 31 is formed in the lower surface of the supporting pin cover 32 .
  • the substrate supporting pin 31 and the supporting pin cover 32 can be closely coupled together before and after the deposition process, while the substrate supporting pin 31 and the supporting pin cover 32 are supporting the substrate 131 .
  • the configuration and arrangement of the substrate supporting pin, substrate supporting pin protection member, and substrate support pin guide member of the deposition apparatus according to the above-explained exemplary embodiments are merely examples for illustrative purposes, and the present invention is not limited to these exemplary embodiments and may be modified in various ways.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

A deposition apparatus is provided to eliminate unnecessary empty spaces that may form between a substrate and a substrate supporting pin, which may be formed within a substrate supporting pin hole, by covering the substrate supporting pin, inserted into the substrate supporting pin hole formed in the substrate support, by a substrate supporting pin cover loaded on the substrate support. Accordingly, the temperature under the substrate can be maintained constant, and generation of parasitic plasma or contaminating particles can be avoided.

Description

    CROSS-REFERENCE TO RELATED APPLICATION
  • This application claims priority to and the benefit of Korean Patent Application No. 10-2013-0006678 filed in the Korean Intellectual Property Office on Jan. 21, 2013, the entire contents of which are incorporated herein by reference.
    • BACKGROUND OF THE INVENTION
  • (a) Field of the Invention
  • The present invention relates to a deposition apparatus.
  • (b) Description of the Related Art
  • A substrate supporting pin (or substrate lift pin) is used in a deposition apparatus for depositing a film on a silicon substrate, in order to load or unload the substrate before and after the process.
  • The substrate supporting pin is inserted into a substrate support where the substrate is loaded, and moves vertically to load or unload the substrate. When the substrate supporting pin moves down to cause the substrate to be loaded on the support substrate, an empty space is formed between the substrate and the substrate supporting pin, within a supporting pinhole into which the substrate supporting pin is inserted.
  • As such empty space has lower thermal conductivity compared to other areas supporting the substrate by the substrate support, the uniformity of a thin film may be declined due to a temperature difference between the empty space and the other areas supporting the substrate when the thin film is formed on the substrate. Moreover, in a deposition process using plasma, parasitic plasma may be generated in this empty space, and this may form an unnecessary thin film on the opposite side of the substrate surface where the process is performed. Further, process gas may move into the empty space and act as contaminating particles, thus lowering the quality of the thin film.
  • The above information disclosed in this Background section is only for enhancement of understanding of the background of the invention and therefore it may contain information that does not form the prior art that is already known in this country to a person of ordinary skill in the art.
    • SUMMARY OF THE INVENTION
  • The present invention has been made in an effort to provide a deposition apparatus for loading and unloading a substrate using a substrate supporting pin, which is able to maintain the temperature under the substrate constant and prevent generation of parasitic plasma or contaminating particles by eliminating unnecessary empty spaces within a supporting pin hole formed in the substrate support.
  • An exemplary embodiment of the present invention provides a deposition apparatus including: a substrate support; a substrate supporting pin inserted into a hole formed in the substrate support; a supporting plate supporting the substrate supporting pin; and a supporting pin cover arranged on top of the substrate supporting pin within the hole of the substrate support.
  • The upper surface of the supporting pin cover may be almost the same height as the upper surface of the substrate support.
  • The upper surface of the supporting pin cover may have almost the same cross-sectional area as the hole.
  • The supporting pin cover may further include a lower body located under the upper surface of the supporting pin cover and having an insertion hole, and the insertion hole may have almost the same cross-sectional area as the supporting pin.
  • The upper surface of the supporting pin may be concave or convex, and the insertion hole of the supporting pin cover may be convex or concave so as to engage with a concavity or convexity on the upper surface of the supporting pin.
  • A coupling slot having a smaller cross-sectional area than the supporting pin may be formed in the upper surface of the supporting pin, and a coupling projection having almost the same cross-sectional area as the coupling slot may be formed on the lower surface of the supporting pin cover.
  • A coupling projection having a smaller cross-sectional area than the supporting pin may be formed on the upper surface of the supporting pin, and a coupling slot having almost the same cross-sectional area as the coupling projection may be formed in the lower surface of the supporting pin cover. The supporting pin cover may further include a lower surface having almost the same cross-sectional area as the hole.
  • A plurality of through holes may be formed in the upper surface of the supporting pin cover.
  • The substrate support may further include a projecting portion in the supporting pin hole, and the projecting portion may take the form of a plate-like circle surrounding the supporting pin cover in a circle or the form of a plurality of protuberances arranged around the supporting pin cover.
  • A deposition apparatus according to an exemplary embodiment of the present invention can eliminate unnecessary empty spaces between a substrate and a substrate supporting pin, which may be formed within a supporting pin hole, by covering the substrate supporting pin, inserted into the supporting pin hole formed in the substrate support, by a substrate supporting pin cover loaded on the substrate support. Accordingly, the temperature under the substrate can be maintained constant, and generation of parasitic plasma or contaminating particles can be avoided.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a cross-sectional view showing a deposition apparatus according to an exemplary embodiment of the present invention.
  • FIG. 2 is a cross-sectional view showing part of a deposition apparatus according to one exemplary embodiment of the present invention.
  • FIG. 3 and FIG. 4 are views showing a substrate supporting pin cover of a deposition apparatus according to an exemplary embodiment of the present invention.
  • FIG. 5 and FIG. 6 are views showing a substrate supporting pin cover of a deposition apparatus according to another exemplary embodiment of the present invention.
  • FIG. 7 to FIG. 12 are views showing examples of a substrate supporting pin and a substrate supporting pin cover of a deposition apparatus according to exemplary embodiments of the present invention.
    •  DETAILED DESCRIPTION OF THE EMBODIMENTS
  • The present invention will be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.
  • In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Like reference numerals designate like elements throughout the specification. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being “on” another element, it can be directly on the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly on” another element, there are no intervening elements present.
  • First, a deposition apparatus according to an exemplary embodiment of the present invention will be described with reference to FIG. 1. FIG. 1 is a cross-sectional view showing a deposition apparatus according to an exemplary embodiment of the present invention.
  • Referring to FIG. 1, the deposition apparatus according to the exemplary embodiment of the present invention includes an outer wall 100, a plurality of gas passage pipes 110, a reaction chamber wall 120, a substrate support 130, a reaction chamber plate 140 defining a reaction space together with the substrate support 130, a heating plate 160 for heating the substrate support 130, a substrate supporting pin 31 inserted into a hole formed in the substrate support 130 and the heating plate 160, a substrate supporting pin cover 32 located on top of the substrate supporting pin 31, and substrate support actuators 33 and 34.
  • Each of the constituent elements will be explained in more detail. A substrate 131 for deposition is arranged on top of the substrate support 130, and the heating plate 160 is arranged under the substrate support 130. The heating plate 160 serves to increase the substrate temperature up to a level required for a process, and may be omitted.
  • The substrate support actuator for actuating the substrate support 130 to load and unload the substrate 131 includes a vertical actuator 33 for controlling vertical movement of the substrate supporting pin 31, which is inserted into the hole formed in the substrate support 130 and supports the substrate, the substrate supporting pin cover 32, and the substrate support 130, and a rotational actuator 34 for controlling rotation of the substrate support 130. A variety of means, such as a pneumatic cylinder, for controlling the vertical movement of the substrate support 130 may be used as the vertical actuator 33. The substrate supporting pin 31 can be supported by a supporting plate 101 which is formed under the substrate supporting pin 31. A variety of means, such as a rotary motor, for controlling the rotary movement of the substrate support 130 can be used as the rotational actuator 34.
  • Next, the vertical movement of the substrate support 130 for loading or unloading the substrate 131 will be explained. As the substrate support 130 and the heating plate 160, which are connected to the vertical actuator 33, move down before and after a deposition process, the reaction chamber wall 120 and the substrate support 130 are separated from each other and the reaction chamber is therefore opened. Thus, the substrate 131 can be loaded inside the reaction chamber or unloaded outside the reaction chamber. Hereupon, the substrate supporting pin 31 and the supporting pin cover 32 are separated from the substrate support 130 and support the substrate 131.
  • During the deposition process, as shown in FIG. 1, the substrate supporting pin 31 is located within the supporting pinhole formed in the substrate support 130, and the supporting pin cover 32 is located in the hole of the substrate support 130 and placed on top of the substrate supporting pin 31. The surface of the supporting pin cover 32 is almost the same height as the surface of the substrate support 130 such that no empty space is formed on the back side of the substrate 131 loaded on the substrate support 130.
  • As such, the substrate supporting pin 31 and the supporting pin cover 32 rise or fall by the vertical movement of the supporting plate 101, and allow the substrate 131 to be unloaded from the substrate support 130 or loaded on the substrate support 130.
  • Now, the substrate supporting pin 31 and supporting pin cover 32 of the deposition apparatus according to the exemplary embodiment of the present invention will be explained with reference to FIG. 2. FIG. 2 is a cross-sectional view showing part of a deposition apparatus according to one exemplary embodiment of the present invention.
  • Referring to FIG. 2, the substrate supporting pin 31 is inserted into a supporting pin hole which penetrates the substrate support 130 and the heating plate 160 located under the substrate support 130. During the deposition process, the substrate supporting pin 31 is arranged lower than the substrate support 130, and the supporting pin cover 32 is arranged on top of the substrate supporting pin 31. The supporting pin cover 32 is made of a highly heat-conductive material. For example, the supporting pin cover 32 may be made of aluminum, titanium, nickel, or the same material as the substrate support 130.
  • During the deposition process, the upper surface of the supporting pin cover 32 is the same height as the upper surface of the substrate support 130. Thus, no empty space is formed between the bottom surface of the substrate 131 where the substrate support 130 is loaded, the substrate support 130, and the supporting pin cover 32.
  • Consequently, there is no space in which a reacting gas can move to the back side of the substrate 131, and this avoids unnecessary deposition, thus preventing contaminating particles from being generated by the unnecessary deposition of the reacting gas on the backside of the substrate. Moreover, parasitic plasma generated in the space at the back side of the substrate 131 can be prevented, thereby avoiding unnecessary deposition there.
  • As the supporting pin cover 32 is made of a highly heat-conductive material, the heat from the heating plate 160 can be properly transferred to the substrate 131. Accordingly, a temperature difference between the area with the supporting pin hole formed in the substrate support 130 and other areas can be avoided.
  • Therefore, the surface temperature of the substrate 131 loaded on the substrate support 130 can be maintained constant over the entire surface, and this can prevent local non-uniformity in deposition rate and thin film characteristics, caused by the temperature difference, and increase the uniformity of a thin film to be formed on the substrate 131.
  • Next, a substrate supporting pin and a supporting pin cover according to an exemplary embodiment of the present invention will be explained with reference to FIG. 3 and FIG. 4. FIG. 3 and FIG. 4 are views showing a substrate supporting pin cover of a deposition apparatus according to an exemplary embodiment of the present invention.
  • Referring to FIG. 3 and FIG. 4, the substrate supporting pin 31 has an upper surface having a relatively large cross-sectional area and a lower surface having a relatively small cross-sectional area. The substrate supporting pin 32 includes a lower surface where a recess for covering the upper surface of the substrate supporting pin 31 is formed, and an upper surface which has the same area as the supporting pin hole of the substrate support 130. According to this structure, if the substrate 131 is loaded on the substrate support 130, the upper part of the supporting pin hole of the substrate support 130 is blocked by the supporting pin cover 32. Accordingly, no empty space is formed on the back side of the substrate 131 loaded on the substrate support 130.
  • Referring to FIG. 4, a plurality of through holes is formed in the upper surface of the supporting pin cover 32. As shown in (a) and (b) of FIG. 4, the through holes provide passages through which process gases which may be flowed into during the process or inactive purge gases pass, thereby preventing the substrate supporting pin 31 and the supporting pin cover 32 from being separated during the process or during the loading or unloading of the substrate 131 and allowing them to be firmly attached to each other.
  • Next, a substrate supporting pin and a supporting pin cover according to an exemplary embodiment of the present invention will be explained with reference to FIG. 5 and FIG. 6. FIG. 5 and FIG. 6 are views showing a substrate supporting pin cover of a deposition apparatus according to another exemplary embodiment of the present invention.
  • Referring to FIG. 5 and FIG. 6, the substrate supporting pin 31 has an upper surface having a relatively large cross-sectional area and a lower surface having a relatively small cross-sectional area. The substrate supporting pin cover 32 includes a lower surface where a recess for covering the upper surface of the substrate supporting pin 31 is formed and which has the same area as a supporting pin hole of the substrate support 130, and an upper surface which has the same area as the supporting pin hole of the substrate support 130. The upper and lower surfaces of the supporting pin cover 32 are coupled together through a central part having a smaller area than the supporting pin hole. According to this structure, if the substrate 131 is loaded on the substrate support 130, the upper part of the supporting pin hole of the substrate support 130 is blocked by the supporting pin cover 32. Accordingly, no empty space is formed on the back side of the substrate 131 loaded on the substrate support 130.
  • A projecting portion 13 is formed on the substrate support 130 as shown in FIG. 5. The projecting portion 13 is located within the supporting pin hole. The projecting portion 13 of the substrate support 130 is arranged corresponding in position to the central part having a small area between the upper surface and the lower surface, and therefore serves to fix the supporting pin cover 32 so as to not deviate outward. Specifically, when the substrate supporting pin 31 and the supporting pin cover 32 move upward, the projecting portion 13 of the substrate support 130 supports the lower surface of the supporting pin cover 32 to prevent the supporting pin cover 32 from moving up and deviating unnecessarily. Accordingly, the substrate supporting pin 31 located under the supporting pin cover 32 is also kept from moving upward and deviating unnecessarily. Similarly, even if the supporting pin 32 moves down, the projecting portion 13 of the substrate support 130 supports the upper surface of the supporting pin cover 32, thereby preventing the supporting pin cover 32 from moving downward unnecessarily. The projecting portion 13 may take the form of a plate-like circle so as to surround the supporting pin cover 32 in a circle, or the form of a plurality of protuberances located around the supporting pin cover 32 so as to partially support the supporting pin cover 32.
  • Referring to FIG. 6, a plurality of through holes is formed in the upper surface of the supporting pin cover 32. The through holes provide passages through which process gases which may be flowed into during the process or inactive purge gases pass.
  • Next, various examples of a substrate supporting pin and a substrate supporting pin cover of a deposition apparatus according to an exemplary embodiment of the present invention will be described with reference to FIGS. 7 to 12. FIG. 7 to FIG. 12 are views showing examples of a substrate supporting pin and a substrate supporting pin cover of a deposition apparatus according to exemplary embodiments of the present invention.
  • Referring to FIG. 7, the substrate supporting pin 31 has an upper surface having a relatively large cross-sectional area and a lower surface having a relatively small cross-sectional area. Also, the upper surface of the substrate supporting pin 31 is concave.
  • The substrate supporting pin cover 32 includes a lower surface where a recess for covering the upper surface of the substrate supporting pin 31 is formed and which has the same area as a supporting pin hole of the substrate support 130, and an upper surface which has the same area as the supporting pin hole of the substrate support 130. The recess of the supporting pin cover 32 is convex so as to engage with the concavity formed on the upper surface of the substrate supporting pin 31. With this configuration, the substrate supporting pin 31 and the supporting pin cover 32 can be closely coupled together before and after the deposition process, while the substrate supporting pin 31 and the supporting pin cover 32 are supporting the substrate 131.
  • Referring to FIG. 8, the substrate supporting pin 31 has an upper surface having a relatively large cross-sectional area and a lower surface having a relatively small cross-sectional area. Also, the upper surface of the substrate supporting pin 31 is convex.
  • The substrate supporting pin cover 32 includes a lower surface where a recess for covering the upper surface of the substrate supporting pin 31 is formed and which has the same area as a supporting pin hole of the substrate support 130, and an upper surface which has the same area as the supporting pin hole of the substrate support 130. The recess of the supporting pin cover 32 is concave so as to engage with the convexity formed on the upper surface of the substrate supporting pin 31. With this configuration, the substrate supporting pin 31 and the supporting pin cover 32 can be closely coupled together before and after the deposition process, while the substrate supporting pin 31 and the supporting pin cover 32 are supporting the substrate 131.
  • Referring to FIG. 9, the substrate supporting pin 31 has an upper surface having a relatively large cross-sectional area and a lower surface having a relatively small cross-sectional area. Also, the center of the upper surface of the substrate supporting pin 31 is raised and has a triangular pyramid shape.
  • The substrate supporting pin cover 32 includes a lower surface where a recess for covering the upper surface of the substrate supporting pin 31 is formed and which has the same area as a supporting pin hole of the substrate support 130, and an upper surface which has the same area as the supporting pin hole of the substrate support 130. The recess of the supporting pin cover 32 is concave in the shape of a triangular pyramid so as to engage with the triangular pyramid-like convexity formed on the upper surface of the substrate supporting pin 31.
  • With this configuration, the substrate supporting pin 31 and the supporting pin cover 32 can be closely coupled together before and after the deposition process, while the substrate supporting pin 31 and the supporting pin cover 32 are supporting the substrate 131.
  • Referring to FIG. 10, the substrate supporting pin 31 has an upper surface having a relatively large cross-sectional area and a lower surface having a relatively small cross-sectional area. Also, the center of the upper surface of the substrate supporting pin 31 is lowered at a given angle.
  • The substrate supporting pin cover 32 includes a lower surface where a recess for covering the upper surface of the substrate supporting pin 31 is formed and which has the same area as a supporting pin hole of the substrate support 130, and an upper surface which has the same area as the supporting pin hole of the substrate support 130. The center of the recess of the supporting pin cover 32 projects at a given angle so as to engage with the shape of the upper surface of the substrate supporting pin 31.
  • With this configuration, the substrate supporting pin 31 and the supporting pin cover 32 can be closely coupled together before and after the deposition process, while the substrate supporting pin 31 and the supporting pin cover 32 are supporting the substrate 131.
  • Referring to FIG. 11, the substrate supporting pin 31 has an upper surface having a relatively large cross-sectional area and a lower surface having a relatively small cross-sectional area. Also, a coupling slot is formed at the center of the upper surface of the substrate supporting pin 31.
  • The substrate supporting pin cover 32 includes a lower surface where a recess for covering the upper surface of the substrate supporting pin 31 is formed and which has the same area as a supporting pin hole of the substrate support 130, and an upper surface which has the same area as the supporting pin hole of the substrate support 130. The recess of the supporting pin cover 32 has a coupling projection that is to be inserted into the coupling slot formed in the upper surface of the substrate supporting pin 31.
  • With this configuration, the substrate supporting pin 31 and the supporting pin cover 32 can be closely coupled together before and after the deposition process, while the substrate supporting pin 31 and the supporting pin cover 32 are supporting the substrate 131.
  • Referring to FIG. 12, the substrate supporting pin 31 has a lower surface having a constant cross-sectional area and a coupling projection that projects at the center of the lower surface.
  • The substrate supporting pin cover 32 includes a lower surface which has the same area as a supporting pin hole of the substrate support 130 and an upper surface which has the same area as the supporting pin hole of the substrate support 130. A coupling slot for inserting the coupling projection of the substrate supporting pin 31 is formed in the lower surface of the supporting pin cover 32.
  • With this configuration, the substrate supporting pin 31 and the supporting pin cover 32 can be closely coupled together before and after the deposition process, while the substrate supporting pin 31 and the supporting pin cover 32 are supporting the substrate 131.
  • The configuration and arrangement of the substrate supporting pin, substrate supporting pin protection member, and substrate support pin guide member of the deposition apparatus according to the above-explained exemplary embodiments are merely examples for illustrative purposes, and the present invention is not limited to these exemplary embodiments and may be modified in various ways.
  • While this invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

Claims (18)

What is claimed is:
1. A deposition apparatus comprising:
a substrate support;
a substrate supporting pin inserted into a hole formed in the substrate support;
a supporting plate supporting the substrate supporting pin; and
a supporting pin cover arranged on top of the substrate supporting pin within the hole of the substrate support.
2. The deposition apparatus of claim 1, wherein an upper surface of the supporting pin cover is almost the same height as an upper surface of the supporting plate.
3. The deposition apparatus of claim 2, wherein the upper surface of the supporting pin cover has almost the same cross-sectional area as the hole.
4. The deposition apparatus of claim 3, wherein the supporting pin cover comprises a lower body located under the upper surface of the supporting pin cover and shaped to form an insertion hole, and the insertion hole has almost the same cross-sectional area as the substrate supporting pin.
5. The deposition apparatus of claim 4, wherein:
an upper surface of the substrate supporting pin is concave or convex, and
the insertion hole of the supporting pin cover is convex or concave so as to engage with a concavity or convexity on the upper surface of the substrate supporting pin.
6. The deposition apparatus of claim 4, wherein:
a coupling slot having a smaller cross-sectional area than the substrate supporting pin is formed in the upper surface of the substrate supporting pin, and
a coupling projection having almost the same cross-sectional area as the coupling slot is formed on a lower surface of the supporting pin cover.
7. The deposition apparatus of claim 4, wherein:
the substrate support comprises a projecting portion, and
the projecting portion takes the form of a plate-like circle surrounding the supporting pin cover in a circle or the form of a plurality of protuberances arranged around the supporting pin cover.
8. The deposition apparatus of claim 3, wherein:
a coupling projection having a smaller cross-sectional area than the substrate supporting pin is formed on an upper surface of the substrate supporting pin, and
a coupling slot having almost the same cross-sectional area as the coupling projection is formed in a lower surface of the supporting pin cover.
9. The deposition apparatus of claim 3, wherein the supporting pin cover comprises a lower surface having almost the same cross-sectional area as the hole.
10. The deposition apparatus of claim 3, wherein a plurality of through holes are formed in the upper surface of the supporting pin cover.
11. The deposition apparatus of claim 3, wherein:
the substrate support comprises a projecting portion, and
the projecting portion takes the form of a plate-like circle surrounding the supporting pin cover in a circle or the form of a plurality of protuberances arranged around the supporting pin cover.
12. The deposition apparatus of claim 2, wherein the supporting pin cover comprises a lower body located under the upper surface of the supporting pin cover and shaped to form an insertion hole, and the insertion hole has almost the same cross-sectional area as the substrate supporting pin.
13. The deposition apparatus of claim 12, wherein:
an upper surface of the substrate supporting pin is concave or convex, and
the insertion hole of the supporting pin cover is convex or concave so as to engage with a concavity or convexity on the upper surface of the substrate supporting pin.
14. The deposition apparatus of claim 12, wherein:
a coupling slot having a smaller cross-sectional area than the substrate supporting pin is formed in an upper surface of the substrate supporting pin, and
a coupling projection having almost the same cross-sectional area as the coupling slot is formed on a lower surface of the supporting pin cover.
15. The deposition apparatus of claim 2, wherein:
a coupling projection having a smaller cross-sectional area than the substrate supporting pin is formed on an upper surface of the substrate supporting pin, and
a coupling slot having almost the same cross-sectional area as the coupling projection is formed in a lower surface of the supporting pin cover.
16. The deposition apparatus of claim 2, wherein the supporting pin cover comprises a lower surface having almost the same cross-sectional area as the hole.
17. The deposition apparatus of claim 2, wherein a plurality of through holes are formed in the upper surface of the supporting pin cover.
18. The deposition apparatus of claim 2, wherein:
the substrate support comprises a projecting portion, and
the projecting portion takes the form of a plate-like circle surrounding the supporting pin cover in a circle or the form of a plurality of protuberances arranged around the supporting pin cover.
US14/157,626 2013-01-21 2014-01-17 Deposition apparatus Abandoned US20140202382A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/945,863 US20180223424A1 (en) 2013-01-21 2018-04-05 Deposition apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2013-0006678 2013-01-21
KR1020130006678A KR102097109B1 (en) 2013-01-21 2013-01-21 Deposition apparatus

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US15/945,863 Division US20180223424A1 (en) 2013-01-21 2018-04-05 Deposition apparatus

Publications (1)

Publication Number Publication Date
US20140202382A1 true US20140202382A1 (en) 2014-07-24

Family

ID=51206718

Family Applications (2)

Application Number Title Priority Date Filing Date
US14/157,626 Abandoned US20140202382A1 (en) 2013-01-21 2014-01-17 Deposition apparatus
US15/945,863 Abandoned US20180223424A1 (en) 2013-01-21 2018-04-05 Deposition apparatus

Family Applications After (1)

Application Number Title Priority Date Filing Date
US15/945,863 Abandoned US20180223424A1 (en) 2013-01-21 2018-04-05 Deposition apparatus

Country Status (2)

Country Link
US (2) US20140202382A1 (en)
KR (1) KR102097109B1 (en)

Cited By (268)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9878494B2 (en) 2011-08-31 2018-01-30 Voxeljet Ag Device for constructing models in layers
US9914169B2 (en) 2010-04-17 2018-03-13 Voxeljet Ag Method and device for producing three-dimensional models
US9925721B2 (en) 2010-02-04 2018-03-27 Voxeljet Ag Device for producing three-dimensional models
CN107851600A (en) * 2015-07-29 2018-03-27 堺显示器制品株式会社 Fulcrum post and film formation device
US9943981B2 (en) 2013-12-11 2018-04-17 Voxeljet Ag 3D infiltration method
US9962885B2 (en) 2010-04-14 2018-05-08 Voxeljet Ag Device for producing three-dimensional models
US10052682B2 (en) 2012-10-12 2018-08-21 Voxeljet Ag 3D multi-stage method
US10059062B2 (en) 2012-05-25 2018-08-28 Voxeljet Ag Device for producing three-dimensional models with special building platforms and drive systems
US10059058B2 (en) 2012-06-22 2018-08-28 Voxeljet Ag Device for building a multilayer structure with storage container or filling container movable along the dispensing container
US10213831B2 (en) 2012-11-25 2019-02-26 Voxeljet Ag Construction of a 3D printing device for producing components
US10220568B2 (en) 2013-12-02 2019-03-05 Voxeljet Ag Interchangeable container with moveable side walls
US10220567B2 (en) 2012-03-06 2019-03-05 Voxeljet Ag Method and device for producing three-dimensional models
US10226919B2 (en) 2007-07-18 2019-03-12 Voxeljet Ag Articles and structures prepared by three-dimensional printing method
US10343301B2 (en) 2013-02-28 2019-07-09 Voxeljet Ag Process for producing a moulding using a water-soluble casting mould and material system for the production thereof
US20190267277A1 (en) * 2018-02-26 2019-08-29 Tokyo Electron Limited Plasma processing apparatus and method for manufacturing mounting stage
US10442170B2 (en) 2013-12-20 2019-10-15 Voxeljet Ag Device, special paper, and method for producing shaped articles
US10682809B2 (en) 2014-12-22 2020-06-16 Voxeljet Ag Method and device for producing 3D moulded parts by means of a layer construction technique
US10720331B2 (en) 2016-11-01 2020-07-21 ASM IP Holdings, B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10784102B2 (en) 2016-12-22 2020-09-22 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10786945B2 (en) 2013-10-30 2020-09-29 Voxeljet Ag Method and device for producing three-dimensional models using a binding agent system
US10787741B2 (en) 2014-08-21 2020-09-29 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
US10804098B2 (en) 2009-08-14 2020-10-13 Asm Ip Holding B.V. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US10832903B2 (en) 2011-10-28 2020-11-10 Asm Ip Holding B.V. Process feed management for semiconductor substrate processing
US10844486B2 (en) 2009-04-06 2020-11-24 Asm Ip Holding B.V. Semiconductor processing reactor and components thereof
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10847371B2 (en) 2018-03-27 2020-11-24 Asm Ip Holding B.V. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
CN111989770A (en) * 2018-03-23 2020-11-24 应用材料公司 Isolated backside helium delivery system
US10843404B2 (en) 2015-05-20 2020-11-24 Voxeljet Ag Phenolic resin method
US10851456B2 (en) 2016-04-21 2020-12-01 Asm Ip Holding B.V. Deposition of metal borides
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US10867786B2 (en) 2018-03-30 2020-12-15 Asm Ip Holding B.V. Substrate processing method
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
US10913207B2 (en) 2014-05-26 2021-02-09 Voxeljet Ag 3D reverse printing method and device
US10914004B2 (en) 2018-06-29 2021-02-09 Asm Ip Holding B.V. Thin-film deposition method and manufacturing method of semiconductor device
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10928731B2 (en) 2017-09-21 2021-02-23 Asm Ip Holding B.V. Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same
US10934619B2 (en) 2016-11-15 2021-03-02 Asm Ip Holding B.V. Gas supply unit and substrate processing apparatus including the gas supply unit
US10943771B2 (en) 2016-10-26 2021-03-09 Asm Ip Holding B.V. Methods for thermally calibrating reaction chambers
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US10950432B2 (en) 2017-04-25 2021-03-16 Asm Ip Holding B.V. Method of depositing thin film and method of manufacturing semiconductor device
US10946556B2 (en) 2014-08-02 2021-03-16 Voxeljet Ag Method and casting mold, in particular for use in cold casting methods
USD913980S1 (en) 2018-02-01 2021-03-23 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11001925B2 (en) 2016-12-19 2021-05-11 Asm Ip Holding B.V. Substrate processing apparatus
US11004977B2 (en) 2017-07-19 2021-05-11 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US11056567B2 (en) 2018-05-11 2021-07-06 Asm Ip Holding B.V. Method of forming a doped metal carbide film on a substrate and related semiconductor device structures
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US11069510B2 (en) 2017-08-30 2021-07-20 Asm Ip Holding B.V. Substrate processing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11094546B2 (en) 2017-10-05 2021-08-17 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US11094582B2 (en) 2016-07-08 2021-08-17 Asm Ip Holding B.V. Selective deposition method to form air gaps
US11097471B2 (en) 2014-03-31 2021-08-24 Voxeljet Ag Method and device for 3D printing using temperature-controlled processing
US11101370B2 (en) 2016-05-02 2021-08-24 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US11107676B2 (en) 2016-07-28 2021-08-31 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
US11114294B2 (en) 2019-03-08 2021-09-07 Asm Ip Holding B.V. Structure including SiOC layer and method of forming same
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
US11127589B2 (en) 2019-02-01 2021-09-21 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
US11127617B2 (en) 2017-11-27 2021-09-21 Asm Ip Holding B.V. Storage device for storing wafer cassettes for use with a batch furnace
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
US11164955B2 (en) 2017-07-18 2021-11-02 Asm Ip Holding B.V. Methods for forming a semiconductor device structure and related semiconductor device structures
US11171025B2 (en) 2019-01-22 2021-11-09 Asm Ip Holding B.V. Substrate processing device
US11168395B2 (en) 2018-06-29 2021-11-09 Asm Ip Holding B.V. Temperature-controlled flange and reactor system including same
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
US11205585B2 (en) 2016-07-28 2021-12-21 Asm Ip Holding B.V. Substrate processing apparatus and method of operating the same
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
US11222772B2 (en) * 2016-12-14 2022-01-11 Asm Ip Holding B.V. Substrate processing apparatus
US11227789B2 (en) 2019-02-20 2022-01-18 Asm Ip Holding B.V. Method and apparatus for filling a recess formed within a substrate surface
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11233133B2 (en) 2015-10-21 2022-01-25 Asm Ip Holding B.V. NbMC layers
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11235518B2 (en) 2015-12-01 2022-02-01 Voxeljet Ag Method and device for producing three-dimensional components with the aid of an overfeed sensor
US11242598B2 (en) 2015-06-26 2022-02-08 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US11251068B2 (en) 2018-10-19 2022-02-15 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
US11251040B2 (en) 2019-02-20 2022-02-15 Asm Ip Holding B.V. Cyclical deposition method including treatment step and apparatus for same
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11274369B2 (en) 2018-09-11 2022-03-15 Asm Ip Holding B.V. Thin film deposition method
US11282698B2 (en) 2019-07-19 2022-03-22 Asm Ip Holding B.V. Method of forming topology-controlled amorphous carbon polymer film
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US11289326B2 (en) 2019-05-07 2022-03-29 Asm Ip Holding B.V. Method for reforming amorphous carbon polymer film
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US11315794B2 (en) 2019-10-21 2022-04-26 Asm Ip Holding B.V. Apparatus and methods for selectively etching films
US11339476B2 (en) 2019-10-08 2022-05-24 Asm Ip Holding B.V. Substrate processing device having connection plates, substrate processing method
US11342216B2 (en) 2019-02-20 2022-05-24 Asm Ip Holding B.V. Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11345999B2 (en) 2019-06-06 2022-05-31 Asm Ip Holding B.V. Method of using a gas-phase reactor system including analyzing exhausted gas
US11355338B2 (en) 2019-05-10 2022-06-07 Asm Ip Holding B.V. Method of depositing material onto a surface and structure formed according to the method
US11361990B2 (en) 2018-05-28 2022-06-14 Asm Ip Holding B.V. Substrate processing method and device manufactured by using the same
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11378337B2 (en) 2019-03-28 2022-07-05 Asm Ip Holding B.V. Door opener and substrate processing apparatus provided therewith
US11387120B2 (en) 2017-09-28 2022-07-12 Asm Ip Holding B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US11393690B2 (en) 2018-01-19 2022-07-19 Asm Ip Holding B.V. Deposition method
US11390946B2 (en) 2019-01-17 2022-07-19 Asm Ip Holding B.V. Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
US11390945B2 (en) 2019-07-03 2022-07-19 Asm Ip Holding B.V. Temperature control assembly for substrate processing apparatus and method of using same
US11401605B2 (en) 2019-11-26 2022-08-02 Asm Ip Holding B.V. Substrate processing apparatus
US11410851B2 (en) 2017-02-15 2022-08-09 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US11414760B2 (en) 2018-10-08 2022-08-16 Asm Ip Holding B.V. Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same
US11417545B2 (en) 2017-08-08 2022-08-16 Asm Ip Holding B.V. Radiation shield
US11424119B2 (en) 2019-03-08 2022-08-23 Asm Ip Holding B.V. Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11430640B2 (en) 2019-07-30 2022-08-30 Asm Ip Holding B.V. Substrate processing apparatus
US11437241B2 (en) 2020-04-08 2022-09-06 Asm Ip Holding B.V. Apparatus and methods for selectively etching silicon oxide films
US11443926B2 (en) 2019-07-30 2022-09-13 Asm Ip Holding B.V. Substrate processing apparatus
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
US11469098B2 (en) 2018-05-08 2022-10-11 Asm Ip Holding B.V. Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11476109B2 (en) 2019-06-11 2022-10-18 Asm Ip Holding B.V. Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
US11482412B2 (en) 2018-01-19 2022-10-25 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
US11482418B2 (en) 2018-02-20 2022-10-25 Asm Ip Holding B.V. Substrate processing method and apparatus
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
US11488854B2 (en) 2020-03-11 2022-11-01 Asm Ip Holding B.V. Substrate handling device with adjustable joints
US11488819B2 (en) 2018-12-04 2022-11-01 Asm Ip Holding B.V. Method of cleaning substrate processing apparatus
US11495459B2 (en) 2019-09-04 2022-11-08 Asm Ip Holding B.V. Methods for selective deposition using a sacrificial capping layer
US11492703B2 (en) 2018-06-27 2022-11-08 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11499222B2 (en) 2018-06-27 2022-11-15 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
US11499226B2 (en) 2018-11-02 2022-11-15 Asm Ip Holding B.V. Substrate supporting unit and a substrate processing device including the same
US11501956B2 (en) 2012-10-12 2022-11-15 Asm Ip Holding B.V. Semiconductor reaction chamber showerhead
US11515187B2 (en) 2020-05-01 2022-11-29 Asm Ip Holding B.V. Fast FOUP swapping with a FOUP handler
US11515188B2 (en) 2019-05-16 2022-11-29 Asm Ip Holding B.V. Wafer boat handling device, vertical batch furnace and method
US11521851B2 (en) 2020-02-03 2022-12-06 Asm Ip Holding B.V. Method of forming structures including a vanadium or indium layer
US11527400B2 (en) 2019-08-23 2022-12-13 Asm Ip Holding B.V. Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11530876B2 (en) 2020-04-24 2022-12-20 Asm Ip Holding B.V. Vertical batch furnace assembly comprising a cooling gas supply
US11530483B2 (en) 2018-06-21 2022-12-20 Asm Ip Holding B.V. Substrate processing system
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US11551912B2 (en) 2020-01-20 2023-01-10 Asm Ip Holding B.V. Method of forming thin film and method of modifying surface of thin film
US11551925B2 (en) 2019-04-01 2023-01-10 Asm Ip Holding B.V. Method for manufacturing a semiconductor device
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
US11557474B2 (en) 2019-07-29 2023-01-17 Asm Ip Holding B.V. Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587821B2 (en) 2017-08-08 2023-02-21 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11594600B2 (en) 2019-11-05 2023-02-28 Asm Ip Holding B.V. Structures with doped semiconductor layers and methods and systems for forming same
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
US11594450B2 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Method for forming a structure with a hole
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
US11605528B2 (en) 2019-07-09 2023-03-14 Asm Ip Holding B.V. Plasma device using coaxial waveguide, and substrate treatment method
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
US11610775B2 (en) 2016-07-28 2023-03-21 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11610774B2 (en) 2019-10-02 2023-03-21 Asm Ip Holding B.V. Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process
US11615970B2 (en) 2019-07-17 2023-03-28 Asm Ip Holding B.V. Radical assist ignition plasma system and method
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
US11626308B2 (en) 2020-05-13 2023-04-11 Asm Ip Holding B.V. Laser alignment fixture for a reactor system
US11626316B2 (en) 2019-11-20 2023-04-11 Asm Ip Holding B.V. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
US11629407B2 (en) 2019-02-22 2023-04-18 Asm Ip Holding B.V. Substrate processing apparatus and method for processing substrates
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
US11637011B2 (en) 2019-10-16 2023-04-25 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
US11639811B2 (en) 2017-11-27 2023-05-02 Asm Ip Holding B.V. Apparatus including a clean mini environment
US11639548B2 (en) 2019-08-21 2023-05-02 Asm Ip Holding B.V. Film-forming material mixed-gas forming device and film forming device
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
US11644758B2 (en) 2020-07-17 2023-05-09 Asm Ip Holding B.V. Structures and methods for use in photolithography
US11646184B2 (en) 2019-11-29 2023-05-09 Asm Ip Holding B.V. Substrate processing apparatus
US11646197B2 (en) 2018-07-03 2023-05-09 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11646204B2 (en) 2020-06-24 2023-05-09 Asm Ip Holding B.V. Method for forming a layer provided with silicon
US11649546B2 (en) 2016-07-08 2023-05-16 Asm Ip Holding B.V. Organic reactants for atomic layer deposition
US11658035B2 (en) 2020-06-30 2023-05-23 Asm Ip Holding B.V. Substrate processing method
US11658030B2 (en) 2017-03-29 2023-05-23 Asm Ip Holding B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US11658029B2 (en) 2018-12-14 2023-05-23 Asm Ip Holding B.V. Method of forming a device structure using selective deposition of gallium nitride and system for same
US11664199B2 (en) 2018-10-19 2023-05-30 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
US11664267B2 (en) 2019-07-10 2023-05-30 Asm Ip Holding B.V. Substrate support assembly and substrate processing device including the same
US11664245B2 (en) 2019-07-16 2023-05-30 Asm Ip Holding B.V. Substrate processing device
US11674220B2 (en) 2020-07-20 2023-06-13 Asm Ip Holding B.V. Method for depositing molybdenum layers using an underlayer
US11676812B2 (en) 2016-02-19 2023-06-13 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on top/bottom portions
US11680839B2 (en) 2019-08-05 2023-06-20 Asm Ip Holding B.V. Liquid level sensor for a chemical source vessel
US11685991B2 (en) 2018-02-14 2023-06-27 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
US11688603B2 (en) 2019-07-17 2023-06-27 Asm Ip Holding B.V. Methods of forming silicon germanium structures
US11705333B2 (en) 2020-05-21 2023-07-18 Asm Ip Holding B.V. Structures including multiple carbon layers and methods of forming and using same
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11725280B2 (en) 2020-08-26 2023-08-15 Asm Ip Holding B.V. Method for forming metal silicon oxide and metal silicon oxynitride layers
US11725277B2 (en) 2011-07-20 2023-08-15 Asm Ip Holding B.V. Pressure transmitter for a semiconductor processing environment
US11735422B2 (en) 2019-10-10 2023-08-22 Asm Ip Holding B.V. Method of forming a photoresist underlayer and structure including same
US11742189B2 (en) 2015-03-12 2023-08-29 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11767589B2 (en) 2020-05-29 2023-09-26 Asm Ip Holding B.V. Substrate processing device
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781221B2 (en) 2019-05-07 2023-10-10 Asm Ip Holding B.V. Chemical source vessel with dip tube
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
US11804364B2 (en) 2020-05-19 2023-10-31 Asm Ip Holding B.V. Substrate processing apparatus
US11802338B2 (en) 2017-07-26 2023-10-31 Asm Ip Holding B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US11810788B2 (en) 2016-11-01 2023-11-07 Asm Ip Holding B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US11814747B2 (en) 2019-04-24 2023-11-14 Asm Ip Holding B.V. Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly
US11823866B2 (en) 2020-04-02 2023-11-21 Asm Ip Holding B.V. Thin film forming method
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11823876B2 (en) 2019-09-05 2023-11-21 Asm Ip Holding B.V. Substrate processing apparatus
US11828707B2 (en) 2020-02-04 2023-11-28 Asm Ip Holding B.V. Method and apparatus for transmittance measurements of large articles
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11830738B2 (en) 2020-04-03 2023-11-28 Asm Ip Holding B.V. Method for forming barrier layer and method for manufacturing semiconductor device
US11827981B2 (en) 2020-10-14 2023-11-28 Asm Ip Holding B.V. Method of depositing material on stepped structure
US11840761B2 (en) 2019-12-04 2023-12-12 Asm Ip Holding B.V. Substrate processing apparatus
US11848200B2 (en) 2017-05-08 2023-12-19 Asm Ip Holding B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US11873557B2 (en) 2020-10-22 2024-01-16 Asm Ip Holding B.V. Method of depositing vanadium metal
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US11885020B2 (en) 2020-12-22 2024-01-30 Asm Ip Holding B.V. Transition metal deposition method
US11885023B2 (en) 2018-10-01 2024-01-30 Asm Ip Holding B.V. Substrate retaining apparatus, system including the apparatus, and method of using same
US11887857B2 (en) 2020-04-24 2024-01-30 Asm Ip Holding B.V. Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
US11885013B2 (en) 2019-12-17 2024-01-30 Asm Ip Holding B.V. Method of forming vanadium nitride layer and structure including the vanadium nitride layer
US11891696B2 (en) 2020-11-30 2024-02-06 Asm Ip Holding B.V. Injector configured for arrangement within a reaction chamber of a substrate processing apparatus
US11898243B2 (en) 2020-04-24 2024-02-13 Asm Ip Holding B.V. Method of forming vanadium nitride-containing layer
US11901179B2 (en) 2020-10-28 2024-02-13 Asm Ip Holding B.V. Method and device for depositing silicon onto substrates
US11915929B2 (en) 2019-11-26 2024-02-27 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
US11923190B2 (en) 2018-07-03 2024-03-05 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11923181B2 (en) 2019-11-29 2024-03-05 Asm Ip Holding B.V. Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing
US11929251B2 (en) 2019-12-02 2024-03-12 Asm Ip Holding B.V. Substrate processing apparatus having electrostatic chuck and substrate processing method
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
US11961741B2 (en) 2020-03-12 2024-04-16 Asm Ip Holding B.V. Method for fabricating layer structure having target topological profile
US11959168B2 (en) 2020-04-29 2024-04-16 Asm Ip Holding B.V. Solid source precursor vessel
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
US11967488B2 (en) 2013-02-01 2024-04-23 Asm Ip Holding B.V. Method for treatment of deposition reactor
US11976359B2 (en) 2020-01-06 2024-05-07 Asm Ip Holding B.V. Gas supply assembly, components thereof, and reactor system including same
US11987881B2 (en) 2020-05-22 2024-05-21 Asm Ip Holding B.V. Apparatus for depositing thin films using hydrogen peroxide
US11986868B2 (en) 2020-02-28 2024-05-21 Asm Ip Holding B.V. System dedicated for parts cleaning
US11996292B2 (en) 2019-10-25 2024-05-28 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
US11996309B2 (en) 2019-05-16 2024-05-28 Asm Ip Holding B.V. Wafer boat handling device, vertical batch furnace and method
US11993843B2 (en) 2017-08-31 2024-05-28 Asm Ip Holding B.V. Substrate processing apparatus
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
US12006572B2 (en) 2019-10-08 2024-06-11 Asm Ip Holding B.V. Reactor system including a gas distribution assembly for use with activated species and method of using same
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
US12020934B2 (en) 2021-04-16 2024-06-25 Asm Ip Holding B.V. Substrate processing method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN206573826U (en) * 2017-03-23 2017-10-20 惠科股份有限公司 A kind of jacking apparatus and orientation ultraviolet irradiation machine

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6146504A (en) * 1998-05-21 2000-11-14 Applied Materials, Inc. Substrate support and lift apparatus and method
US6168668B1 (en) * 1998-11-25 2001-01-02 Applied Materials, Inc. Shadow ring and guide for supporting the shadow ring in a chamber
US20020084566A1 (en) * 2000-12-28 2002-07-04 Ries Michael J. Semiconductor wafer holder
US6435798B1 (en) * 1999-04-09 2002-08-20 Asm Japan K.K. Semiconductor processing apparatus with substrate-supporting mechanism
US20050000450A1 (en) * 2001-10-16 2005-01-06 Iizuka Hachishiro Treatment subject elevating mechanism, and treating device using the same
US20080149032A1 (en) * 2006-12-22 2008-06-26 Soon-Bin Jung Lift pin, apparatus for processing a substrate and method of processing a substrate
KR20080096115A (en) * 2007-04-27 2008-10-30 세메스 주식회사 Substrate lifting unit, appratus and method for treating substrate using the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100549273B1 (en) * 2004-01-15 2006-02-03 주식회사 테라세미콘 Wafer-Holder for Semiconductor Manufacturing Process
US7244311B2 (en) * 2004-10-13 2007-07-17 Lam Research Corporation Heat transfer system for improved semiconductor processing uniformity
JP5148955B2 (en) * 2007-09-11 2013-02-20 東京エレクトロン株式会社 Substrate mounting mechanism and substrate processing apparatus

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6146504A (en) * 1998-05-21 2000-11-14 Applied Materials, Inc. Substrate support and lift apparatus and method
US6168668B1 (en) * 1998-11-25 2001-01-02 Applied Materials, Inc. Shadow ring and guide for supporting the shadow ring in a chamber
US6435798B1 (en) * 1999-04-09 2002-08-20 Asm Japan K.K. Semiconductor processing apparatus with substrate-supporting mechanism
US20020084566A1 (en) * 2000-12-28 2002-07-04 Ries Michael J. Semiconductor wafer holder
US20050000450A1 (en) * 2001-10-16 2005-01-06 Iizuka Hachishiro Treatment subject elevating mechanism, and treating device using the same
US20080149032A1 (en) * 2006-12-22 2008-06-26 Soon-Bin Jung Lift pin, apparatus for processing a substrate and method of processing a substrate
KR20080096115A (en) * 2007-04-27 2008-10-30 세메스 주식회사 Substrate lifting unit, appratus and method for treating substrate using the same

Cited By (325)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10226919B2 (en) 2007-07-18 2019-03-12 Voxeljet Ag Articles and structures prepared by three-dimensional printing method
US10960655B2 (en) 2007-07-18 2021-03-30 Voxeljet Ag Articles and structures prepared by three-dimensional printing method
US10844486B2 (en) 2009-04-06 2020-11-24 Asm Ip Holding B.V. Semiconductor processing reactor and components thereof
US10804098B2 (en) 2009-08-14 2020-10-13 Asm Ip Holding B.V. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US9925721B2 (en) 2010-02-04 2018-03-27 Voxeljet Ag Device for producing three-dimensional models
US9962885B2 (en) 2010-04-14 2018-05-08 Voxeljet Ag Device for producing three-dimensional models
US10179365B2 (en) 2010-04-17 2019-01-15 Voxeljet Ag Method and device for producing three-dimensional models
US10639715B2 (en) 2010-04-17 2020-05-05 Voxeljet Ag Method and device for producing three-dimensional models
US9914169B2 (en) 2010-04-17 2018-03-13 Voxeljet Ag Method and device for producing three-dimensional models
US11725277B2 (en) 2011-07-20 2023-08-15 Asm Ip Holding B.V. Pressure transmitter for a semiconductor processing environment
US9878494B2 (en) 2011-08-31 2018-01-30 Voxeljet Ag Device for constructing models in layers
US10913204B2 (en) 2011-08-31 2021-02-09 Voxeljet Ag Device for constructing models in layers and methods thereof
US10832903B2 (en) 2011-10-28 2020-11-10 Asm Ip Holding B.V. Process feed management for semiconductor substrate processing
US10589460B2 (en) 2012-03-06 2020-03-17 Voxeljet Ag Method and device for producing three-dimensional models
US10220567B2 (en) 2012-03-06 2019-03-05 Voxeljet Ag Method and device for producing three-dimensional models
US10059062B2 (en) 2012-05-25 2018-08-28 Voxeljet Ag Device for producing three-dimensional models with special building platforms and drive systems
US10059058B2 (en) 2012-06-22 2018-08-28 Voxeljet Ag Device for building a multilayer structure with storage container or filling container movable along the dispensing container
US11501956B2 (en) 2012-10-12 2022-11-15 Asm Ip Holding B.V. Semiconductor reaction chamber showerhead
US10052682B2 (en) 2012-10-12 2018-08-21 Voxeljet Ag 3D multi-stage method
US11130290B2 (en) 2012-11-25 2021-09-28 Voxeljet Ag Construction of a 3D printing device for producing components
US10213831B2 (en) 2012-11-25 2019-02-26 Voxeljet Ag Construction of a 3D printing device for producing components
US11967488B2 (en) 2013-02-01 2024-04-23 Asm Ip Holding B.V. Method for treatment of deposition reactor
US10343301B2 (en) 2013-02-28 2019-07-09 Voxeljet Ag Process for producing a moulding using a water-soluble casting mould and material system for the production thereof
US11072090B2 (en) 2013-02-28 2021-07-27 Voxeljet Ag Material system for producing a molded part using a water-soluble casting mold
US10786945B2 (en) 2013-10-30 2020-09-29 Voxeljet Ag Method and device for producing three-dimensional models using a binding agent system
US11541596B2 (en) 2013-10-30 2023-01-03 Voxeljet Ag Method and device for producing three-dimensional models using a binding agent system
US11850796B2 (en) 2013-12-02 2023-12-26 Voxeljet Ag Interchangeable container with moveable side walls
US11292188B2 (en) 2013-12-02 2022-04-05 Voxeljet Ag Interchangeable container with moveable side walls
US10220568B2 (en) 2013-12-02 2019-03-05 Voxeljet Ag Interchangeable container with moveable side walls
US9943981B2 (en) 2013-12-11 2018-04-17 Voxeljet Ag 3D infiltration method
US10442170B2 (en) 2013-12-20 2019-10-15 Voxeljet Ag Device, special paper, and method for producing shaped articles
US10889055B2 (en) 2013-12-20 2021-01-12 Voxeljet Ag Device, special paper, and method for producing shaped articles
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US11097471B2 (en) 2014-03-31 2021-08-24 Voxeljet Ag Method and device for 3D printing using temperature-controlled processing
US10913207B2 (en) 2014-05-26 2021-02-09 Voxeljet Ag 3D reverse printing method and device
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US10946556B2 (en) 2014-08-02 2021-03-16 Voxeljet Ag Method and casting mold, in particular for use in cold casting methods
US10787741B2 (en) 2014-08-21 2020-09-29 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US11795545B2 (en) 2014-10-07 2023-10-24 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US10682809B2 (en) 2014-12-22 2020-06-16 Voxeljet Ag Method and device for producing 3D moulded parts by means of a layer construction technique
US11742189B2 (en) 2015-03-12 2023-08-29 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10843404B2 (en) 2015-05-20 2020-11-24 Voxeljet Ag Phenolic resin method
US11242598B2 (en) 2015-06-26 2022-02-08 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
CN107851600A (en) * 2015-07-29 2018-03-27 堺显示器制品株式会社 Fulcrum post and film formation device
US11233133B2 (en) 2015-10-21 2022-01-25 Asm Ip Holding B.V. NbMC layers
US11235518B2 (en) 2015-12-01 2022-02-01 Voxeljet Ag Method and device for producing three-dimensional components with the aid of an overfeed sensor
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US11956977B2 (en) 2015-12-29 2024-04-09 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US11676812B2 (en) 2016-02-19 2023-06-13 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on top/bottom portions
US10851456B2 (en) 2016-04-21 2020-12-01 Asm Ip Holding B.V. Deposition of metal borides
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US11101370B2 (en) 2016-05-02 2021-08-24 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US11094582B2 (en) 2016-07-08 2021-08-17 Asm Ip Holding B.V. Selective deposition method to form air gaps
US11749562B2 (en) 2016-07-08 2023-09-05 Asm Ip Holding B.V. Selective deposition method to form air gaps
US11649546B2 (en) 2016-07-08 2023-05-16 Asm Ip Holding B.V. Organic reactants for atomic layer deposition
US11107676B2 (en) 2016-07-28 2021-08-31 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11205585B2 (en) 2016-07-28 2021-12-21 Asm Ip Holding B.V. Substrate processing apparatus and method of operating the same
US11610775B2 (en) 2016-07-28 2023-03-21 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11694892B2 (en) 2016-07-28 2023-07-04 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10943771B2 (en) 2016-10-26 2021-03-09 Asm Ip Holding B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US11810788B2 (en) 2016-11-01 2023-11-07 Asm Ip Holding B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10720331B2 (en) 2016-11-01 2020-07-21 ASM IP Holdings, B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10934619B2 (en) 2016-11-15 2021-03-02 Asm Ip Holding B.V. Gas supply unit and substrate processing apparatus including the gas supply unit
US11396702B2 (en) 2016-11-15 2022-07-26 Asm Ip Holding B.V. Gas supply unit and substrate processing apparatus including the gas supply unit
US11222772B2 (en) * 2016-12-14 2022-01-11 Asm Ip Holding B.V. Substrate processing apparatus
US12000042B2 (en) 2016-12-15 2024-06-04 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11970766B2 (en) 2016-12-15 2024-04-30 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11851755B2 (en) 2016-12-15 2023-12-26 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11001925B2 (en) 2016-12-19 2021-05-11 Asm Ip Holding B.V. Substrate processing apparatus
US11251035B2 (en) 2016-12-22 2022-02-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10784102B2 (en) 2016-12-22 2020-09-22 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US11410851B2 (en) 2017-02-15 2022-08-09 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US11658030B2 (en) 2017-03-29 2023-05-23 Asm Ip Holding B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10950432B2 (en) 2017-04-25 2021-03-16 Asm Ip Holding B.V. Method of depositing thin film and method of manufacturing semiconductor device
US11848200B2 (en) 2017-05-08 2023-12-19 Asm Ip Holding B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US11976361B2 (en) 2017-06-28 2024-05-07 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US11164955B2 (en) 2017-07-18 2021-11-02 Asm Ip Holding B.V. Methods for forming a semiconductor device structure and related semiconductor device structures
US11695054B2 (en) 2017-07-18 2023-07-04 Asm Ip Holding B.V. Methods for forming a semiconductor device structure and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US11004977B2 (en) 2017-07-19 2021-05-11 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11802338B2 (en) 2017-07-26 2023-10-31 Asm Ip Holding B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US11417545B2 (en) 2017-08-08 2022-08-16 Asm Ip Holding B.V. Radiation shield
US11587821B2 (en) 2017-08-08 2023-02-21 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US11069510B2 (en) 2017-08-30 2021-07-20 Asm Ip Holding B.V. Substrate processing apparatus
US11581220B2 (en) 2017-08-30 2023-02-14 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11993843B2 (en) 2017-08-31 2024-05-28 Asm Ip Holding B.V. Substrate processing apparatus
US10928731B2 (en) 2017-09-21 2021-02-23 Asm Ip Holding B.V. Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11387120B2 (en) 2017-09-28 2022-07-12 Asm Ip Holding B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US11094546B2 (en) 2017-10-05 2021-08-17 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
US11682572B2 (en) 2017-11-27 2023-06-20 Asm Ip Holdings B.V. Storage device for storing wafer cassettes for use with a batch furnace
US11127617B2 (en) 2017-11-27 2021-09-21 Asm Ip Holding B.V. Storage device for storing wafer cassettes for use with a batch furnace
US11639811B2 (en) 2017-11-27 2023-05-02 Asm Ip Holding B.V. Apparatus including a clean mini environment
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US11501973B2 (en) 2018-01-16 2022-11-15 Asm Ip Holding B.V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US11972944B2 (en) 2018-01-19 2024-04-30 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
US11482412B2 (en) 2018-01-19 2022-10-25 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
US11393690B2 (en) 2018-01-19 2022-07-19 Asm Ip Holding B.V. Deposition method
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
USD913980S1 (en) 2018-02-01 2021-03-23 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US11735414B2 (en) 2018-02-06 2023-08-22 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US11387106B2 (en) 2018-02-14 2022-07-12 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11685991B2 (en) 2018-02-14 2023-06-27 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11482418B2 (en) 2018-02-20 2022-10-25 Asm Ip Holding B.V. Substrate processing method and apparatus
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11939673B2 (en) 2018-02-23 2024-03-26 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US20190267277A1 (en) * 2018-02-26 2019-08-29 Tokyo Electron Limited Plasma processing apparatus and method for manufacturing mounting stage
CN110197787A (en) * 2018-02-26 2019-09-03 东京毅力科创株式会社 The manufacturing method of plasma processing apparatus and mounting table
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
CN111989770A (en) * 2018-03-23 2020-11-24 应用材料公司 Isolated backside helium delivery system
US10847371B2 (en) 2018-03-27 2020-11-24 Asm Ip Holding B.V. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US11398382B2 (en) 2018-03-27 2022-07-26 Asm Ip Holding B.V. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US10867786B2 (en) 2018-03-30 2020-12-15 Asm Ip Holding B.V. Substrate processing method
US11469098B2 (en) 2018-05-08 2022-10-11 Asm Ip Holding B.V. Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
US11056567B2 (en) 2018-05-11 2021-07-06 Asm Ip Holding B.V. Method of forming a doped metal carbide film on a substrate and related semiconductor device structures
US11908733B2 (en) 2018-05-28 2024-02-20 Asm Ip Holding B.V. Substrate processing method and device manufactured by using the same
US11361990B2 (en) 2018-05-28 2022-06-14 Asm Ip Holding B.V. Substrate processing method and device manufactured by using the same
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11837483B2 (en) 2018-06-04 2023-12-05 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US11530483B2 (en) 2018-06-21 2022-12-20 Asm Ip Holding B.V. Substrate processing system
US11296189B2 (en) 2018-06-21 2022-04-05 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
US11952658B2 (en) 2018-06-27 2024-04-09 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11492703B2 (en) 2018-06-27 2022-11-08 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11814715B2 (en) 2018-06-27 2023-11-14 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11499222B2 (en) 2018-06-27 2022-11-15 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US10914004B2 (en) 2018-06-29 2021-02-09 Asm Ip Holding B.V. Thin-film deposition method and manufacturing method of semiconductor device
US11168395B2 (en) 2018-06-29 2021-11-09 Asm Ip Holding B.V. Temperature-controlled flange and reactor system including same
US11646197B2 (en) 2018-07-03 2023-05-09 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11923190B2 (en) 2018-07-03 2024-03-05 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11804388B2 (en) 2018-09-11 2023-10-31 Asm Ip Holding B.V. Substrate processing apparatus and method
US11274369B2 (en) 2018-09-11 2022-03-15 Asm Ip Holding B.V. Thin film deposition method
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
US11885023B2 (en) 2018-10-01 2024-01-30 Asm Ip Holding B.V. Substrate retaining apparatus, system including the apparatus, and method of using same
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11414760B2 (en) 2018-10-08 2022-08-16 Asm Ip Holding B.V. Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same
US11664199B2 (en) 2018-10-19 2023-05-30 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
US11251068B2 (en) 2018-10-19 2022-02-15 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11735445B2 (en) 2018-10-31 2023-08-22 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11866823B2 (en) 2018-11-02 2024-01-09 Asm Ip Holding B.V. Substrate supporting unit and a substrate processing device including the same
US11499226B2 (en) 2018-11-02 2022-11-15 Asm Ip Holding B.V. Substrate supporting unit and a substrate processing device including the same
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US11798999B2 (en) 2018-11-16 2023-10-24 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US11411088B2 (en) 2018-11-16 2022-08-09 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US11244825B2 (en) 2018-11-16 2022-02-08 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
US11488819B2 (en) 2018-12-04 2022-11-01 Asm Ip Holding B.V. Method of cleaning substrate processing apparatus
US11769670B2 (en) 2018-12-13 2023-09-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
US11658029B2 (en) 2018-12-14 2023-05-23 Asm Ip Holding B.V. Method of forming a device structure using selective deposition of gallium nitride and system for same
US11959171B2 (en) 2019-01-17 2024-04-16 Asm Ip Holding B.V. Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
US11390946B2 (en) 2019-01-17 2022-07-19 Asm Ip Holding B.V. Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
US11171025B2 (en) 2019-01-22 2021-11-09 Asm Ip Holding B.V. Substrate processing device
US11127589B2 (en) 2019-02-01 2021-09-21 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
US11342216B2 (en) 2019-02-20 2022-05-24 Asm Ip Holding B.V. Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11251040B2 (en) 2019-02-20 2022-02-15 Asm Ip Holding B.V. Cyclical deposition method including treatment step and apparatus for same
US11227789B2 (en) 2019-02-20 2022-01-18 Asm Ip Holding B.V. Method and apparatus for filling a recess formed within a substrate surface
US11615980B2 (en) 2019-02-20 2023-03-28 Asm Ip Holding B.V. Method and apparatus for filling a recess formed within a substrate surface
US11798834B2 (en) 2019-02-20 2023-10-24 Asm Ip Holding B.V. Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11629407B2 (en) 2019-02-22 2023-04-18 Asm Ip Holding B.V. Substrate processing apparatus and method for processing substrates
US11424119B2 (en) 2019-03-08 2022-08-23 Asm Ip Holding B.V. Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11114294B2 (en) 2019-03-08 2021-09-07 Asm Ip Holding B.V. Structure including SiOC layer and method of forming same
US11901175B2 (en) 2019-03-08 2024-02-13 Asm Ip Holding B.V. Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
US11378337B2 (en) 2019-03-28 2022-07-05 Asm Ip Holding B.V. Door opener and substrate processing apparatus provided therewith
US11551925B2 (en) 2019-04-01 2023-01-10 Asm Ip Holding B.V. Method for manufacturing a semiconductor device
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
US11814747B2 (en) 2019-04-24 2023-11-14 Asm Ip Holding B.V. Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly
US11781221B2 (en) 2019-05-07 2023-10-10 Asm Ip Holding B.V. Chemical source vessel with dip tube
US11289326B2 (en) 2019-05-07 2022-03-29 Asm Ip Holding B.V. Method for reforming amorphous carbon polymer film
US11355338B2 (en) 2019-05-10 2022-06-07 Asm Ip Holding B.V. Method of depositing material onto a surface and structure formed according to the method
US11996309B2 (en) 2019-05-16 2024-05-28 Asm Ip Holding B.V. Wafer boat handling device, vertical batch furnace and method
US11515188B2 (en) 2019-05-16 2022-11-29 Asm Ip Holding B.V. Wafer boat handling device, vertical batch furnace and method
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
US11453946B2 (en) 2019-06-06 2022-09-27 Asm Ip Holding B.V. Gas-phase reactor system including a gas detector
US11345999B2 (en) 2019-06-06 2022-05-31 Asm Ip Holding B.V. Method of using a gas-phase reactor system including analyzing exhausted gas
US11476109B2 (en) 2019-06-11 2022-10-18 Asm Ip Holding B.V. Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
US11908684B2 (en) 2019-06-11 2024-02-20 Asm Ip Holding B.V. Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
US11746414B2 (en) 2019-07-03 2023-09-05 Asm Ip Holding B.V. Temperature control assembly for substrate processing apparatus and method of using same
US11390945B2 (en) 2019-07-03 2022-07-19 Asm Ip Holding B.V. Temperature control assembly for substrate processing apparatus and method of using same
US11605528B2 (en) 2019-07-09 2023-03-14 Asm Ip Holding B.V. Plasma device using coaxial waveguide, and substrate treatment method
US11664267B2 (en) 2019-07-10 2023-05-30 Asm Ip Holding B.V. Substrate support assembly and substrate processing device including the same
US11664245B2 (en) 2019-07-16 2023-05-30 Asm Ip Holding B.V. Substrate processing device
US11996304B2 (en) 2019-07-16 2024-05-28 Asm Ip Holding B.V. Substrate processing device
US11615970B2 (en) 2019-07-17 2023-03-28 Asm Ip Holding B.V. Radical assist ignition plasma system and method
US11688603B2 (en) 2019-07-17 2023-06-27 Asm Ip Holding B.V. Methods of forming silicon germanium structures
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
US11282698B2 (en) 2019-07-19 2022-03-22 Asm Ip Holding B.V. Method of forming topology-controlled amorphous carbon polymer film
US11557474B2 (en) 2019-07-29 2023-01-17 Asm Ip Holding B.V. Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
US11430640B2 (en) 2019-07-30 2022-08-30 Asm Ip Holding B.V. Substrate processing apparatus
US11443926B2 (en) 2019-07-30 2022-09-13 Asm Ip Holding B.V. Substrate processing apparatus
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11876008B2 (en) 2019-07-31 2024-01-16 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11680839B2 (en) 2019-08-05 2023-06-20 Asm Ip Holding B.V. Liquid level sensor for a chemical source vessel
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
US11639548B2 (en) 2019-08-21 2023-05-02 Asm Ip Holding B.V. Film-forming material mixed-gas forming device and film forming device
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
US11594450B2 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Method for forming a structure with a hole
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US11827978B2 (en) 2019-08-23 2023-11-28 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US11898242B2 (en) 2019-08-23 2024-02-13 Asm Ip Holding B.V. Methods for forming a polycrystalline molybdenum film over a surface of a substrate and related structures including a polycrystalline molybdenum film
US11527400B2 (en) 2019-08-23 2022-12-13 Asm Ip Holding B.V. Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US11495459B2 (en) 2019-09-04 2022-11-08 Asm Ip Holding B.V. Methods for selective deposition using a sacrificial capping layer
US11823876B2 (en) 2019-09-05 2023-11-21 Asm Ip Holding B.V. Substrate processing apparatus
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
US11610774B2 (en) 2019-10-02 2023-03-21 Asm Ip Holding B.V. Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process
US11339476B2 (en) 2019-10-08 2022-05-24 Asm Ip Holding B.V. Substrate processing device having connection plates, substrate processing method
US12006572B2 (en) 2019-10-08 2024-06-11 Asm Ip Holding B.V. Reactor system including a gas distribution assembly for use with activated species and method of using same
US11735422B2 (en) 2019-10-10 2023-08-22 Asm Ip Holding B.V. Method of forming a photoresist underlayer and structure including same
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
US11637011B2 (en) 2019-10-16 2023-04-25 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
US11315794B2 (en) 2019-10-21 2022-04-26 Asm Ip Holding B.V. Apparatus and methods for selectively etching films
US11996292B2 (en) 2019-10-25 2024-05-28 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
US11594600B2 (en) 2019-11-05 2023-02-28 Asm Ip Holding B.V. Structures with doped semiconductor layers and methods and systems for forming same
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
US11626316B2 (en) 2019-11-20 2023-04-11 Asm Ip Holding B.V. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
US11915929B2 (en) 2019-11-26 2024-02-27 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
US11401605B2 (en) 2019-11-26 2022-08-02 Asm Ip Holding B.V. Substrate processing apparatus
US11646184B2 (en) 2019-11-29 2023-05-09 Asm Ip Holding B.V. Substrate processing apparatus
US11923181B2 (en) 2019-11-29 2024-03-05 Asm Ip Holding B.V. Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing
US11929251B2 (en) 2019-12-02 2024-03-12 Asm Ip Holding B.V. Substrate processing apparatus having electrostatic chuck and substrate processing method
US11840761B2 (en) 2019-12-04 2023-12-12 Asm Ip Holding B.V. Substrate processing apparatus
US11885013B2 (en) 2019-12-17 2024-01-30 Asm Ip Holding B.V. Method of forming vanadium nitride layer and structure including the vanadium nitride layer
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11976359B2 (en) 2020-01-06 2024-05-07 Asm Ip Holding B.V. Gas supply assembly, components thereof, and reactor system including same
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
US11551912B2 (en) 2020-01-20 2023-01-10 Asm Ip Holding B.V. Method of forming thin film and method of modifying surface of thin film
US11521851B2 (en) 2020-02-03 2022-12-06 Asm Ip Holding B.V. Method of forming structures including a vanadium or indium layer
US11828707B2 (en) 2020-02-04 2023-11-28 Asm Ip Holding B.V. Method and apparatus for transmittance measurements of large articles
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
US11986868B2 (en) 2020-02-28 2024-05-21 Asm Ip Holding B.V. System dedicated for parts cleaning
US11837494B2 (en) 2020-03-11 2023-12-05 Asm Ip Holding B.V. Substrate handling device with adjustable joints
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
US11488854B2 (en) 2020-03-11 2022-11-01 Asm Ip Holding B.V. Substrate handling device with adjustable joints
US11961741B2 (en) 2020-03-12 2024-04-16 Asm Ip Holding B.V. Method for fabricating layer structure having target topological profile
US11823866B2 (en) 2020-04-02 2023-11-21 Asm Ip Holding B.V. Thin film forming method
US11830738B2 (en) 2020-04-03 2023-11-28 Asm Ip Holding B.V. Method for forming barrier layer and method for manufacturing semiconductor device
US11437241B2 (en) 2020-04-08 2022-09-06 Asm Ip Holding B.V. Apparatus and methods for selectively etching silicon oxide films
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
US11898243B2 (en) 2020-04-24 2024-02-13 Asm Ip Holding B.V. Method of forming vanadium nitride-containing layer
US11530876B2 (en) 2020-04-24 2022-12-20 Asm Ip Holding B.V. Vertical batch furnace assembly comprising a cooling gas supply
US11887857B2 (en) 2020-04-24 2024-01-30 Asm Ip Holding B.V. Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
US11959168B2 (en) 2020-04-29 2024-04-16 Asm Ip Holding B.V. Solid source precursor vessel
US11798830B2 (en) 2020-05-01 2023-10-24 Asm Ip Holding B.V. Fast FOUP swapping with a FOUP handler
US11515187B2 (en) 2020-05-01 2022-11-29 Asm Ip Holding B.V. Fast FOUP swapping with a FOUP handler
US11626308B2 (en) 2020-05-13 2023-04-11 Asm Ip Holding B.V. Laser alignment fixture for a reactor system
US11804364B2 (en) 2020-05-19 2023-10-31 Asm Ip Holding B.V. Substrate processing apparatus
US11705333B2 (en) 2020-05-21 2023-07-18 Asm Ip Holding B.V. Structures including multiple carbon layers and methods of forming and using same
US11987881B2 (en) 2020-05-22 2024-05-21 Asm Ip Holding B.V. Apparatus for depositing thin films using hydrogen peroxide
US11767589B2 (en) 2020-05-29 2023-09-26 Asm Ip Holding B.V. Substrate processing device
US11646204B2 (en) 2020-06-24 2023-05-09 Asm Ip Holding B.V. Method for forming a layer provided with silicon
US11658035B2 (en) 2020-06-30 2023-05-23 Asm Ip Holding B.V. Substrate processing method
US11644758B2 (en) 2020-07-17 2023-05-09 Asm Ip Holding B.V. Structures and methods for use in photolithography
US11674220B2 (en) 2020-07-20 2023-06-13 Asm Ip Holding B.V. Method for depositing molybdenum layers using an underlayer
US11725280B2 (en) 2020-08-26 2023-08-15 Asm Ip Holding B.V. Method for forming metal silicon oxide and metal silicon oxynitride layers
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
US11827981B2 (en) 2020-10-14 2023-11-28 Asm Ip Holding B.V. Method of depositing material on stepped structure
US11873557B2 (en) 2020-10-22 2024-01-16 Asm Ip Holding B.V. Method of depositing vanadium metal
US11901179B2 (en) 2020-10-28 2024-02-13 Asm Ip Holding B.V. Method and device for depositing silicon onto substrates
US11891696B2 (en) 2020-11-30 2024-02-06 Asm Ip Holding B.V. Injector configured for arrangement within a reaction chamber of a substrate processing apparatus
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
US11885020B2 (en) 2020-12-22 2024-01-30 Asm Ip Holding B.V. Transition metal deposition method
US12020934B2 (en) 2021-04-16 2024-06-25 Asm Ip Holding B.V. Substrate processing method
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
US12020938B2 (en) 2022-07-07 2024-06-25 Asm Ip Holding B.V. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode

Also Published As

Publication number Publication date
KR20140094726A (en) 2014-07-31
KR102097109B1 (en) 2020-04-10
US20180223424A1 (en) 2018-08-09

Similar Documents

Publication Publication Date Title
US20180223424A1 (en) Deposition apparatus
KR102417930B1 (en) Deposition Apparatus and Deposition System having the same
KR102014279B1 (en) Substrate process apparatus
JP5878813B2 (en) Batch processing equipment
US10793951B2 (en) Apparatus to improve substrate temperature uniformity
US11104991B2 (en) Processing apparatus and cover member
US20150159272A1 (en) Substrate heating device and process chamber
KR101405299B1 (en) Substrate supporting plate and apparatus for depositing thin film having the same
JP2008520825A5 (en)
US20180122660A1 (en) Substrate support apparatus, substrate treating system including the same, and substrate treating method
JP2010135510A (en) Depositing device
US8876976B2 (en) Chemical vapor deposition apparatus for equalizing heating temperature
JP7134003B2 (en) Deposition equipment
JP2021012944A (en) Substrate processing apparatus and substrate delivery method
JP2021097162A (en) Substrate processing device and mounting table
KR20190111999A (en) Carrying ring
KR101139692B1 (en) Chemical vapor deposition device
US9120114B2 (en) Deposition apparatus
JP4792719B2 (en) Film forming apparatus and film forming method
KR101411385B1 (en) Substrate supporting plate and apparatus for depositing thin film having the same
KR102433189B1 (en) Stage, substrate processing apparatus and stage assembling method
US20070042118A1 (en) Encapsulated thermal processing
JP7359000B2 (en) Apparatus for processing a substrate and method for processing a substrate
KR101232908B1 (en) A chemical vapor dipositino apparatus
JP2020193379A (en) Stage structure, substrate processing device and method of controlling stage structure

Legal Events

Date Code Title Description
AS Assignment

Owner name: ASM IP HOLDING B.V., NETHERLANDS

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KIM, YOUNG-JAE;KIM, KI JONG;JUNG, DONG-RAK;AND OTHERS;REEL/FRAME:031991/0612

Effective date: 20140117

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION