US20140008345A1 - Apparatus and method for repairing broken line of array substrate - Google Patents
Apparatus and method for repairing broken line of array substrate Download PDFInfo
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- US20140008345A1 US20140008345A1 US13/641,746 US201213641746A US2014008345A1 US 20140008345 A1 US20140008345 A1 US 20140008345A1 US 201213641746 A US201213641746 A US 201213641746A US 2014008345 A1 US2014008345 A1 US 2014008345A1
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- repair
- line
- broken
- wire
- array substrate
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- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/26—Methods of annealing
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
Definitions
- the present invention relates to a liquid crystal display (LCD) technology, and especially to an apparatus and a method for repairing a broken line of an array substrate.
- LCD liquid crystal display
- An LCD panel includes an array substrate and a color filter substrate. There are plenty of wires, such as data lines and scan lines, being disposed on the array substrate.
- a broken-line defect may exist in data lines or scan lines due to influences of various factors.
- a broken-line defect 11 exists in a wire 10 of FIG. 1 A, such that the wire 10 can not conduct electricity to realize a function of signal transmission.
- the broken-line defect 11 of the wire 10 is generally coated with a film by a repair machine for a broken line.
- a repair line 12 is formed on the broken-line defect for connecting the wire 10 , as shown in FIG. 1 B.
- lattices 15 (a frame that represents the molecules being in an array of points repeating periodically in three dimensions is called a lattice) which are composed of the molecules are arranged chaotically.
- a number of boundaries 13 which are formed by the lattices 15 being arranged chaotically, are too large.
- FIG. 1 E after the repair line 12 is formed by coating the film, there is a split 14 on the surface of the repair line 12 , such that the repair line 12 has a rugged surface.
- the conventional repair machine and method for repairing a broken line are only capable of repairing a wire with a broken length less than 100 micrometers. If the broken length of the wire is larger than 100 micrometers, the array substrate will be regard as a nonconforming product that needs to be abandoned, whereby the production rate of the array substrate is influenced.
- An objective of the present invention is to provide a repair apparatus for a broken line of an array substrate, thereby solving the technical problem that the molecules of a repair surface of a repair line are arranged chaotically, to influence the capability of the signal transmission of the wire and further to influence the repair length, after a broken-line defect of a wire is coated to forming the repair line.
- a repair apparatus for a broken line of an array substrate constructed in the present invention includes: a repair unit for forming a repair line on a broken-line defect of a wire on the array substrate for conducting the wire; a heating unit for making a surface of the repair line reach a predetermined temperature, so as to heat the repair line formed by the repair unit.
- the repair unit specifically includes: a removal module for removing a protective layer on both ends of the broken-line defect to expose the both ends of the broken-line defect; and a plated-wire module for forming the repair line on the broken-line defect by using a repair material for connecting the wire.
- the repair material is chromium hexacarbonyl.
- the repair material is molybdenum hexacarbonyl.
- the repair material is tungsten hexacarbonyl.
- the heating unit is further utilized to heat the repair line formed by the repair unit through laser beams.
- the predetermined temperature is larger than a melting point of the repair material and less than a boiling point of the repair material.
- Another objective of the present invention is to provide a repair apparatus for a broken line of an array substrate, thereby solving the technical problem that the molecules of a repair surface of a repair line are arranged chaotically, to influence the capability of signal transmission of the wire and further to influence the repair length, after a broken-line defect of a wire is coated to forming the repair line.
- a repair apparatus for a broken line of an array substrate constructed in the present invention includes: a repair unit for forming a repair line on a broken-line defect of a wire on the array substrate; and a heating unit for heating the repair line formed by the repair unit.
- the repair unit specifically includes: a removal module for removing a protective layer on both ends of the broken-line defect to expose the both ends of the broken-line defect; and a plated-wire module for forming the repair line on the broken-line defect by using a repair material for connecting the wire.
- the repair material is chromium hexacarbonyl.
- the repair material is molybdenum hexacarbonyl.
- the repair material is tungsten hexacarbonyl.
- the heating unit is further utilized to heat the repair line formed by the repair unit through laser beams.
- a heating unit is further utilized to make a surface of the repair line reach a predetermined temperature, wherein the predetermined temperature is larger than a melting point of the repair material and less than a boiling point of the repair material.
- Yet another objective of the present invention is to provide a method for repairing a broken line of an array substrate, thereby solving the technical problem that the molecules of a repair surface of a repair line are arranged chaotically, to influence the capability of signal transmission of the wire and further to influence the repair length, after a broken-line defect of a wire is coated to forming the repair line.
- a method for repairing a broken line of an array substrate constructed in the present invention includes the following steps of: forming a repair line on a broken-line defect of a wire on the array substrate; and heating the formed repair line.
- the step of forming the repair line on the broken-line defect of the wire on the array substrate specifically includes: removing a protective layer on both ends of the broken-line defect to expose the both ends of the broken-line defect; and forming the repair line on the broken-line defect by using a repair material for connecting the wire.
- the repair material is chromium hexacarbonyl, molybdenum hexacarbonyl, or tungsten hexacarbonyl.
- the step of heating the formed repair line specifically includes: heating the formed repair line through a laser beam heat treatment.
- the step of heating the formed repair line specifically includes: making a surface of the repair line reach a predetermined temperature, wherein the predetermined temperature is larger than a melting point of the repair material and less than a boiling point of the repair material.
- the repair line is formed on the broken-line defect of the wire for connecting the wire, and the repair line is treated by the high temperature heating, so that the molecules of the surface of the repair line are rearranged in sequence according a predetermined rule. Accordingly, lattice boundaries on the surface of the repair line can be reduced for making the surface of the repair line uniform, so as to decrease the resistance of the repair line and increase the capability of the signal transmission of the wire. Therefore, the repair for a longer broken-line defect can be achieved.
- FIG. 1A to FIG. 1E are schematic drawings illustrating a wire with a broken-line defect being repaired in the prior art
- FIG. 2 is a schematic drawing illustrating a repair apparatus for a broken line of an array substrate in the present invention
- FIG. 3 is a schematic drawing illustrating an array substrate with a broken line
- FIG. 4 is a partial enlarged view of FIG. 3 ;
- FIG. 5 is a schematic drawing illustrating a repaired broken line that is the broken line in
- FIG. 4 being repaired by the repair apparatus in FIG. 2 ;
- FIG. 6 is a schematic drawing illustrating lattices on a surface of the repair line after the repair line is heated in the present invention
- FIG. 7 is a schematic drawing illustrating lattice boundaries on the surface of the repair line after the repair line is heated in the present invention
- FIG. 8 is a schematic drawing illustrating a split on the surface of the repair line after the repair line is heated in the present invention.
- FIG. 9 is a flow chart illustrating a method for repairing a broken line of an array substrate according to the preferred embodiment of the present invention.
- FIG. 2 is a schematic drawing illustrating a repair apparatus 20 for a broken line of an array substrate according to a preferred embodiment of the present invention.
- the repair apparatus 20 for a broken line of the array substrate is utilized to repair a broken line of an array substrate.
- the repair apparatus 20 for the broken line of the array substrate includes a repair unit 21 and a heating unit 22 , and the repair unit 21 specifically includes a removal module 211 and a plated-wire module 212 .
- FIG. 3 is a schematic drawing illustrating an array substrate with a broken line
- FIG. 4 is a partial enlarged view illustrating a broken-line defect existing on a wire in FIG. 3
- FIG. 5 is a schematic drawing illustrating a repaired broken line that is the broken line in FIG. 4 being repaired by the repair apparatus 20 in FIG. 2 .
- FIG. 3 there are a plurality of wires 31 , such as scan lines 311 and data lines 312 , formed on the array substrate 30 .
- the scan lines 311 and the data lines 312 intersect perpendicularly to each other for defining a plurality of pixels 313 , and the pixels 313 includes pixels R, pixels G, and pixels B.
- Switching elements are disposed in the pixels 313 .
- the switching elements are thin-film transistors (TFT) which includes gates, sources, and drains (not shown).
- TFT thin-film transistors
- the scan lines 311 and the data lines 312 herein are usually covered with a protective layer. After fabricating the array substrate 30 , the array substrate 30 needs to be inspected. Once a broken-line defect 32 is detected in the wires 31 of the array substrate 30 , it can be repaired by the repair apparatus 20 provided in the present invention.
- the broken-line defect 32 divides the wire 31 into a first wire 33 and a second wire 34 , both of which are disconnected.
- the repair unit 21 of the repair apparatus 20 forms a repair line 40 for connecting the first wire 33 and the second wire 34 , and the heating unit 22 heats the formed repair line 40 .
- the protective layer (not shown) covering the wires 31 for protecting the wires 31 on the array substrate 30 the protective layer on both ends of the broken-line defect 32 is firstly removed by the removal module 211 according to the present invention so as to expose the both ends of the broken-line defect 32 .
- the removal module 211 can be a laser fusing equipment, which takes a laser beam with a high power to remove the protective layer on the both ends of the broken-line defect 32 .
- the plated-wire module 212 takes a repair material to form the repair line 40 on the broken-line defect 32 , so as to connect the first wire 33 and the second wire 34 for making the wire 31 conduct electricity.
- the plated-wire module 212 herein can be an evaporation coating device, a sputtering device, and so on.
- the repair material can be chromium hexacarbonyl Cr(CO) 6 , molybdenum hexacarbonyl Mo(CO) 6 , tungsten hexacarbonyl W(CO) 6 , and so on.
- the tungsten hexacarbonyl herein has a boiling point T1 and a melting point T2, in which the boiling point T1 is 175 degrees centigrade and the melting point T2 is 170 degrees centigrade.
- the heating unit 22 heats the repair line 40 that is formed by the repair unit 21 .
- the heating unit 22 in the present invention is a laser heating equipment, which takes a laser beam to heat. That is, the laser heating equipment creates a high temperature by emitting a highly concentrated power beam, so as to heat the repair line 40 to the high temperature.
- the heating unit 22 herein makes a surface of the repair line 40 reach a predetermined temperature T3, in which the predetermined temperature T3 is close to a melting point of the repair material and less than a boiling point of the repair material.
- the predetermined temperature T3 is larger than the melting point T2 of the repair material and less than the boiling point T1 of the repair material.
- the predetermined temperature T3 is about 170 degrees centigrade and less than 175 degrees centigrade, such as 165 degrees centigrade, 170 degrees centigrade, 173 degrees centigrade, and so on, so that the surface of the repair line 40 can be melted but not volatilized.
- FIG. 6 is a schematic drawing illustrating an arrangement of lattices after the repair line is heated.
- the lattices 41 which consist of the molecules are also arranged according to the predetermined rule, so that the lattice boundaries 42 on the surface of the repair line 40 are significant reduced.
- FIG. 7 is a schematic drawing illustrating the lattice boundaries on the surface of the repair line 40 that is heated by the heating unit 22 . Accordingly, the resistance of the surface of the repair line 40 can be extremely reduced, so that signals can be transmitted easily.
- the electric conductivity of the wire 30 also can be improved.
- FIG. 8 is a schematic drawing illustrating a split on the surface of the repair line 40 after the repair line 40 is heated.
- the heating unit 22 heats the repair line 40 to the high temperature
- the molecules on the surface of the repair line 40 are arranged in sequence according to the predetermined rule.
- the molecules with regular movement can fill the split on the surface of the repair line 40 , so that the surface of the repair line 40 are relative uniform (in comparison with FIG. 1 E).
- the problem of the bigger split on the surface of the repair line 40 is improved. Accordingly, the resistance of the surface of the repair line 40 can be extremely reduced, so that the signals can be transmitted easily.
- the electric conductivity of the wire 30 also can be improved.
- the repair apparatus 20 of the present invention performs the repair of the broken-line defect 32 existing in the wire 31 by the repair unit 21 .
- the repair line 40 is formed on the broken-line defect 32 , and then the repair line 40 is treated by the high temperature heating, so that the molecules constituting the repair line 40 are arranged in sequence according the predetermined rule.
- a number of the lattice boundaries on the surface of the repair line 40 is reduced, thereby making the surface of the repair line 40 uniform.
- the resistance of the repair line 40 is decreased, and the capability of the wire 31 for signal transmission is increased.
- the molecules of the surface of the repair line 40 can be arranged in sequence by means of the high temperature heating, so the resistance of the repair line is decreased. Therefore, the wire with a longer broken-line defect can be repaired in the present invention.
- the broken-line defect which is larger than 100 micrometers (um) can be repaired.
- FIG. 9 is a flow chart illustrating a method for repairing a broken line of an array substrate according to the preferred embodiment of the present invention.
- the step is to remove a protective layer on both ends of the broken-line defect 32 to expose the both ends of the broken-line defect 32 .
- the broken-line defect 32 herein exists on the wire 31 .
- the wire 31 is divides into the first wire 33 and the second wire 34 , both of which are disconnected, due to the existence of the broken-line defect 32 .
- the laser fusing equipment can be employed to remove the protective layer on the both ends of the broken-line defect 32 .
- the laser fusing equipment takes a laser beam with a high power to fuse the protective layer on the both ends of the broken-line defect 32 .
- the step is to take a repair material to form the repair line 40 , so as to connect the first wire 33 and the second wire 34 for making the wire 31 conduct electricity.
- the repair line 40 can be formed by evaporation coating, sputtering, and so on.
- the repair material can be chromium hexacarbonyl Cr(CO) 6 , molybdenum hexacarbonyl Mo(CO) 6 , tungsten hexacarbonyl W(CO) 6 , and so on.
- the repair material has the boiling point T1 and the melting point T2. For example, the boiling point T1 of the tungsten hexacarbonyl is 175 degrees centigrade and the melting point T2 thereof is 170 degrees centigrade.
- the step is to heat the repair line 40 , so that the molecules constituting the repair line 40 are arranged in sequence according the predetermined rule.
- the repair line 40 can be heated by a laser heating equipment.
- the laser heating equipment is capable of heating to a predetermined temperature T3, in which the predetermined temperature T3 is close to a melting point T2 of the repair material and less than a boiling point T1 of the repair material.
- the predetermined temperature T3 is larger than the melting point T2 of the repair material and less than the boiling point T1 of the repair material.
- the predetermined temperature T3 is about 170 degrees centigrade and less than 175 degrees centigrade, such as 165 degrees centigrade, 170 degrees centigrade, 173 degrees centigrade, and so on, so that the repair line 40 can be melted but not volatilized.
- the detail processes with regard to the method can refer to the above-mentioned detail description for the repair apparatus, so no further detail will be provided herein.
- the repair line is formed on the broken-line defect, and then the repair line is treated by the high temperature heating, so that the molecules constituting the repair line are arranged in sequence according the predetermined rule.
- the number of the lattice boundaries on the surface of the repair line is reduced, thereby making the surface of the repair line uniform.
- the resistance of the repair line is decreased, and the capability of the signal transmission of the wire is increased.
- the resistance of the repair line is decreased, the wire with a longer broken-line defect can be repaired.
- the broken-line defect which is larger than 100 micrometers (um) can be repaired.
Abstract
The present invention provides an apparatus and a method for repairing a broken line of an array substrate. The apparatus includes a repair unit and a heating unit. The repair unit forms a repair line on a broken-line defect of a wire on the array substrate. The heating unit heats the repair line, so that the molecules constituting the repair line are arranged in sequence according a predetermined rule. The present invention can achieve the repair for a longer broken-line defect.
Description
- The present invention relates to a liquid crystal display (LCD) technology, and especially to an apparatus and a method for repairing a broken line of an array substrate.
- With a growing development in LCD production techniques, there are high demands for production efficiency of the LCD. An LCD panel includes an array substrate and a color filter substrate. There are plenty of wires, such as data lines and scan lines, being disposed on the array substrate.
- In processes of fabricating the array substrate, a broken-line defect may exist in data lines or scan lines due to influences of various factors. Referring to
FIG. 1 A, a broken-line defect 11 exists in awire 10 ofFIG. 1 A, such that thewire 10 can not conduct electricity to realize a function of signal transmission. - In prior art, in order to repair the broken-line defect 11 that exists in the
wire 10, the broken-line defect 11 of thewire 10 is generally coated with a film by a repair machine for a broken line. Arepair line 12 is formed on the broken-line defect for connecting thewire 10, as shown inFIG. 1 B. - Referring to
FIG. 1 C, after therepair line 12 is formed by the repair machine for the broken line, molecules on a surface of therepair line 12 are arranged without orders. Thus, lattices 15 (a frame that represents the molecules being in an array of points repeating periodically in three dimensions is called a lattice) which are composed of the molecules are arranged chaotically. Referring toFIG. 1 D, a number ofboundaries 13, which are formed by thelattices 15 being arranged chaotically, are too large. Moreover, referring toFIG. 1 E, after therepair line 12 is formed by coating the film, there is asplit 14 on the surface of therepair line 12, such that therepair line 12 has a rugged surface. The above-mentioned two situations lead to an impedance increase of the surface of therepair line 12, resulting in a resistance increase of therepair line 12, such that an electrical conductivity of the repairedwire 10 decreases. The performance of the signal transmission of thewire 10 is influenced. Therefore, the conventional repair machine and method for repairing a broken line are only capable of repairing a wire with a broken length less than 100 micrometers. If the broken length of the wire is larger than 100 micrometers, the array substrate will be regard as a nonconforming product that needs to be abandoned, whereby the production rate of the array substrate is influenced. - An objective of the present invention is to provide a repair apparatus for a broken line of an array substrate, thereby solving the technical problem that the molecules of a repair surface of a repair line are arranged chaotically, to influence the capability of the signal transmission of the wire and further to influence the repair length, after a broken-line defect of a wire is coated to forming the repair line.
- To achieve the foregoing objective, a repair apparatus for a broken line of an array substrate constructed in the present invention includes: a repair unit for forming a repair line on a broken-line defect of a wire on the array substrate for conducting the wire; a heating unit for making a surface of the repair line reach a predetermined temperature, so as to heat the repair line formed by the repair unit.
- In one preferred embodiment of the present invention, the repair unit specifically includes: a removal module for removing a protective layer on both ends of the broken-line defect to expose the both ends of the broken-line defect; and a plated-wire module for forming the repair line on the broken-line defect by using a repair material for connecting the wire.
- In one preferred embodiment of the present invention, the repair material is chromium hexacarbonyl.
- In one preferred embodiment of the present invention, the repair material is molybdenum hexacarbonyl.
- In one preferred embodiment of the present invention, the repair material is tungsten hexacarbonyl. In one preferred embodiment of the present invention, the heating unit is further utilized to heat the repair line formed by the repair unit through laser beams.
- In one preferred embodiment of the present invention, the predetermined temperature is larger than a melting point of the repair material and less than a boiling point of the repair material.
- Another objective of the present invention is to provide a repair apparatus for a broken line of an array substrate, thereby solving the technical problem that the molecules of a repair surface of a repair line are arranged chaotically, to influence the capability of signal transmission of the wire and further to influence the repair length, after a broken-line defect of a wire is coated to forming the repair line.
- To achieve the foregoing objective, a repair apparatus for a broken line of an array substrate constructed in the present invention includes: a repair unit for forming a repair line on a broken-line defect of a wire on the array substrate; and a heating unit for heating the repair line formed by the repair unit.
- In one preferred embodiment of the present invention, the repair unit specifically includes: a removal module for removing a protective layer on both ends of the broken-line defect to expose the both ends of the broken-line defect; and a plated-wire module for forming the repair line on the broken-line defect by using a repair material for connecting the wire.
- In one preferred embodiment of the present invention, the repair material is chromium hexacarbonyl.
- In one preferred embodiment of the present invention, the repair material is molybdenum hexacarbonyl.
- In one preferred embodiment of the present invention, the repair material is tungsten hexacarbonyl.
- In one preferred embodiment of the present invention, the heating unit is further utilized to heat the repair line formed by the repair unit through laser beams.
- In one preferred embodiment of the present invention, a heating unit is further utilized to make a surface of the repair line reach a predetermined temperature, wherein the predetermined temperature is larger than a melting point of the repair material and less than a boiling point of the repair material.
- Yet another objective of the present invention is to provide a method for repairing a broken line of an array substrate, thereby solving the technical problem that the molecules of a repair surface of a repair line are arranged chaotically, to influence the capability of signal transmission of the wire and further to influence the repair length, after a broken-line defect of a wire is coated to forming the repair line.
- To achieve the foregoing objective, a method for repairing a broken line of an array substrate constructed in the present invention includes the following steps of: forming a repair line on a broken-line defect of a wire on the array substrate; and heating the formed repair line.
- In one preferred embodiment of the present invention, the step of forming the repair line on the broken-line defect of the wire on the array substrate specifically includes: removing a protective layer on both ends of the broken-line defect to expose the both ends of the broken-line defect; and forming the repair line on the broken-line defect by using a repair material for connecting the wire.
- In one preferred embodiment of the present invention, the repair material is chromium hexacarbonyl, molybdenum hexacarbonyl, or tungsten hexacarbonyl.
- In one preferred embodiment of the present invention, the step of heating the formed repair line specifically includes: heating the formed repair line through a laser beam heat treatment.
- In one preferred embodiment of the present invention, the step of heating the formed repair line specifically includes: making a surface of the repair line reach a predetermined temperature, wherein the predetermined temperature is larger than a melting point of the repair material and less than a boiling point of the repair material.
- In comparison with the prior art, the repair line is formed on the broken-line defect of the wire for connecting the wire, and the repair line is treated by the high temperature heating, so that the molecules of the surface of the repair line are rearranged in sequence according a predetermined rule. Accordingly, lattice boundaries on the surface of the repair line can be reduced for making the surface of the repair line uniform, so as to decrease the resistance of the repair line and increase the capability of the signal transmission of the wire. Therefore, the repair for a longer broken-line defect can be achieved.
- It is to be understood that both the foregoing general description and the following detailed description of the present invention are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
-
FIG. 1A toFIG. 1E are schematic drawings illustrating a wire with a broken-line defect being repaired in the prior art; -
FIG. 2 is a schematic drawing illustrating a repair apparatus for a broken line of an array substrate in the present invention; -
FIG. 3 is a schematic drawing illustrating an array substrate with a broken line; -
FIG. 4 is a partial enlarged view ofFIG. 3 ; -
FIG. 5 is a schematic drawing illustrating a repaired broken line that is the broken line in -
FIG. 4 being repaired by the repair apparatus inFIG. 2 ; -
FIG. 6 is a schematic drawing illustrating lattices on a surface of the repair line after the repair line is heated in the present invention; -
FIG. 7 is a schematic drawing illustrating lattice boundaries on the surface of the repair line after the repair line is heated in the present invention; -
FIG. 8 is a schematic drawing illustrating a split on the surface of the repair line after the repair line is heated in the present invention; and -
FIG. 9 is a flow chart illustrating a method for repairing a broken line of an array substrate according to the preferred embodiment of the present invention. - Descriptions of the following embodiment refer to attached drawings which are utilized to exemplify specific embodiments. Directional terms mentioned in the present invention, such as “top” and “down”, “front”, “rear”, “left”, “right”, “inside”, “outside”, “side” and so on are only directions with respect to the attached drawings. Therefore, the used directional terms are utilized to explain and understand the present invention but not or limit the present invention. In different drawings, the same reference numerals refer to like parts throughout the drawings.
- Referring to
FIG. 2 ,FIG. 2 is a schematic drawing illustrating arepair apparatus 20 for a broken line of an array substrate according to a preferred embodiment of the present invention. - The
repair apparatus 20 for a broken line of the array substrate is utilized to repair a broken line of an array substrate. Therepair apparatus 20 for the broken line of the array substrate includes arepair unit 21 and aheating unit 22, and therepair unit 21 specifically includes aremoval module 211 and a plated-wire module 212. - Referring to
FIG. 3 ,FIG. 4 , andFIG. 5 ,FIG. 3 is a schematic drawing illustrating an array substrate with a broken line, andFIG. 4 is a partial enlarged view illustrating a broken-line defect existing on a wire inFIG. 3 , andFIG. 5 is a schematic drawing illustrating a repaired broken line that is the broken line inFIG. 4 being repaired by therepair apparatus 20 inFIG. 2 . - In
FIG. 3 , there are a plurality ofwires 31, such asscan lines 311 anddata lines 312, formed on thearray substrate 30. Thescan lines 311 and thedata lines 312 intersect perpendicularly to each other for defining a plurality ofpixels 313, and thepixels 313 includes pixels R, pixels G, and pixels B. Switching elements are disposed in thepixels 313. For example, the switching elements are thin-film transistors (TFT) which includes gates, sources, and drains (not shown). Thescan lines 311 and thedata lines 312 herein are usually covered with a protective layer. After fabricating thearray substrate 30, thearray substrate 30 needs to be inspected. Once a broken-line defect 32 is detected in thewires 31 of thearray substrate 30, it can be repaired by therepair apparatus 20 provided in the present invention. - In
FIG. 4 , the broken-line defect 32 divides thewire 31 into afirst wire 33 and asecond wire 34, both of which are disconnected. InFIG. 5 , therepair unit 21 of therepair apparatus 20 forms arepair line 40 for connecting thefirst wire 33 and thesecond wire 34, and theheating unit 22 heats the formedrepair line 40. - Referring to
FIG. 2 again, because there is usually the protective layer (not shown) covering thewires 31 for protecting thewires 31 on thearray substrate 30, the protective layer on both ends of the broken-line defect 32 is firstly removed by theremoval module 211 according to the present invention so as to expose the both ends of the broken-line defect 32. Theremoval module 211 can be a laser fusing equipment, which takes a laser beam with a high power to remove the protective layer on the both ends of the broken-line defect 32. - After the protective layer on the both ends of the broken-
line defect 32 is removed by theremoval module 211 to expose the both ends of the broken-line defect 32, the plated-wire module 212 takes a repair material to form therepair line 40 on the broken-line defect 32, so as to connect thefirst wire 33 and thesecond wire 34 for making thewire 31 conduct electricity. - The plated-
wire module 212 herein can be an evaporation coating device, a sputtering device, and so on. The repair material can be chromium hexacarbonyl Cr(CO)6, molybdenum hexacarbonyl Mo(CO)6, tungsten hexacarbonyl W(CO)6, and so on. To take the tungsten hexacarbonyl as an example in the embodiment, the tungsten hexacarbonyl herein has a boiling point T1 and a melting point T2, in which the boiling point T1 is 175 degrees centigrade and the melting point T2 is 170 degrees centigrade. - After forming the
repair line 40, theheating unit 22 heats therepair line 40 that is formed by therepair unit 21. Preferably, theheating unit 22 in the present invention is a laser heating equipment, which takes a laser beam to heat. That is, the laser heating equipment creates a high temperature by emitting a highly concentrated power beam, so as to heat therepair line 40 to the high temperature. - The
heating unit 22 herein makes a surface of therepair line 40 reach a predetermined temperature T3, in which the predetermined temperature T3 is close to a melting point of the repair material and less than a boiling point of the repair material. For example, the predetermined temperature T3 is larger than the melting point T2 of the repair material and less than the boiling point T1 of the repair material. Taking the repair material, tungsten hexacarbonyl, for example, the predetermined temperature T3 is about 170 degrees centigrade and less than 175 degrees centigrade, such as 165 degrees centigrade, 170 degrees centigrade, 173 degrees centigrade, and so on, so that the surface of therepair line 40 can be melted but not volatilized. - Under the heating at the predetermined temperature T3, the molecules which constitute the
repair line 40 are arranged in sequence according to a predetermined rule. The predetermined rule means that the molecules are arranged in sequence along a certain direction. Referring toFIG. 6 ,FIG. 6 is a schematic drawing illustrating an arrangement of lattices after the repair line is heated. Thelattices 41 which consist of the molecules are also arranged according to the predetermined rule, so that thelattice boundaries 42 on the surface of therepair line 40 are significant reduced. Referring toFIG. 7 ,FIG. 7 is a schematic drawing illustrating the lattice boundaries on the surface of therepair line 40 that is heated by theheating unit 22. Accordingly, the resistance of the surface of therepair line 40 can be extremely reduced, so that signals can be transmitted easily. The electric conductivity of thewire 30 also can be improved. - Referring to
FIG. 8 ,FIG. 8 is a schematic drawing illustrating a split on the surface of therepair line 40 after therepair line 40 is heated. After theheating unit 22 heats therepair line 40 to the high temperature, the molecules on the surface of therepair line 40 are arranged in sequence according to the predetermined rule. The molecules with regular movement can fill the split on the surface of therepair line 40, so that the surface of therepair line 40 are relative uniform (in comparison withFIG. 1 E). The problem of the bigger split on the surface of therepair line 40 is improved. Accordingly, the resistance of the surface of therepair line 40 can be extremely reduced, so that the signals can be transmitted easily. The electric conductivity of thewire 30 also can be improved. - The
repair apparatus 20 of the present invention performs the repair of the broken-line defect 32 existing in thewire 31 by therepair unit 21. Therepair line 40 is formed on the broken-line defect 32, and then therepair line 40 is treated by the high temperature heating, so that the molecules constituting therepair line 40 are arranged in sequence according the predetermined rule. Thus, a number of the lattice boundaries on the surface of therepair line 40 is reduced, thereby making the surface of therepair line 40 uniform. The resistance of therepair line 40 is decreased, and the capability of thewire 31 for signal transmission is increased. - Moreover, the molecules of the surface of the
repair line 40 can be arranged in sequence by means of the high temperature heating, so the resistance of the repair line is decreased. Therefore, the wire with a longer broken-line defect can be repaired in the present invention. For example, the broken-line defect which is larger than 100 micrometers (um) can be repaired. -
FIG. 9 is a flow chart illustrating a method for repairing a broken line of an array substrate according to the preferred embodiment of the present invention. - At step S901, the step is to remove a protective layer on both ends of the broken-
line defect 32 to expose the both ends of the broken-line defect 32. The broken-line defect 32 herein exists on thewire 31. Thewire 31 is divides into thefirst wire 33 and thesecond wire 34, both of which are disconnected, due to the existence of the broken-line defect 32. - In practical execution, the laser fusing equipment can be employed to remove the protective layer on the both ends of the broken-
line defect 32. The laser fusing equipment takes a laser beam with a high power to fuse the protective layer on the both ends of the broken-line defect 32. - At step S902, the step is to take a repair material to form the
repair line 40, so as to connect thefirst wire 33 and thesecond wire 34 for making thewire 31 conduct electricity. - In practical execution, the
repair line 40 can be formed by evaporation coating, sputtering, and so on. The repair material can be chromium hexacarbonyl Cr(CO)6, molybdenum hexacarbonyl Mo(CO)6, tungsten hexacarbonyl W(CO)6, and so on. The repair material has the boiling point T1 and the melting point T2. For example, the boiling point T1 of the tungsten hexacarbonyl is 175 degrees centigrade and the melting point T2 thereof is 170 degrees centigrade. - At step S903, the step is to heat the
repair line 40, so that the molecules constituting therepair line 40 are arranged in sequence according the predetermined rule. In practical execution, therepair line 40 can be heated by a laser heating equipment. The laser heating equipment is capable of heating to a predetermined temperature T3, in which the predetermined temperature T3 is close to a melting point T2 of the repair material and less than a boiling point T1 of the repair material. For example, the predetermined temperature T3 is larger than the melting point T2 of the repair material and less than the boiling point T1 of the repair material. Taking the repair material, tungsten hexacarbonyl, for example, the predetermined temperature T3 is about 170 degrees centigrade and less than 175 degrees centigrade, such as 165 degrees centigrade, 170 degrees centigrade, 173 degrees centigrade, and so on, so that therepair line 40 can be melted but not volatilized. - The detail processes with regard to the method can refer to the above-mentioned detail description for the repair apparatus, so no further detail will be provided herein. In the present invention, after the repair line is formed on the broken-line defect, and then the repair line is treated by the high temperature heating, so that the molecules constituting the repair line are arranged in sequence according the predetermined rule. Thus, the number of the lattice boundaries on the surface of the repair line is reduced, thereby making the surface of the repair line uniform. The resistance of the repair line is decreased, and the capability of the signal transmission of the wire is increased. Moreover, because the resistance of the repair line is decreased, the wire with a longer broken-line defect can be repaired. For example, the broken-line defect which is larger than 100 micrometers (um) can be repaired.
- While the preferred embodiments of the present invention have been illustrated and described in detail, various modifications and alterations can be made by persons skilled in this art. The embodiment of the present invention is therefore described in an illustrative but not restrictive sense. It is intended that the present invention should not be limited to the particular forms as illustrated, and that all modifications and alterations which maintain the spirit and realm of the present invention are within the scope as defined in the appended claims.
Claims (19)
1. A repair apparatus for a broken line of an array substrate, comprising:
a repair unit for forming a repair line on a broken-line defect of a wire on the array substrate for connecting the wire; and
a heating unit for making a surface of the repair line reach a predetermined temperature, so as to heat the repair line formed by the repair unit.
2. The repair apparatus of claim 1 , wherein the repair unit specifically comprising:
a removal module for removing a protective layer on both ends of the broken-line defect to expose the both ends of the broken-line defect; and
a plated-wire module for forming the repair line on the broken-line defect by using a repair material for connecting the wire.
3. The repair apparatus of claim 2 , wherein the repair material is chromium hexacarbonyl.
4. The repair apparatus of claim 2 , wherein the repair material is molybdenum hexacarbonyl.
5. The repair apparatus of claim 2 , wherein the repair material is tungsten hexacarbonyl.
6. The repair apparatus of claim 1 , wherein the heating unit is further utilized to heat the repair line formed by the repair unit through laser beams.
7. The repair apparatus of claim 1 , wherein the predetermined temperature is larger than a melting point of the repair material and less than a boiling point of the repair material.
8. A repair apparatus for a broken line of an array substrate, comprising:
a repair unit for forming a repair line on a broken-line defect of a wire on the array substrate; and
a heating unit for heating the repair line formed by the repair unit.
9. The repair apparatus of claim 8 , wherein the repair unit specifically comprising:
a removal module for removing a protective layer on both ends of the broken-line defect to expose the both ends of the broken-line defect; and
a plated-wire module for forming the repair line on the broken-line defect by using a repair material for connecting the wire.
10. The repair apparatus of claim 9 , wherein the repair material is chromium hexacarbonyl.
11. The repair apparatus of claim 9 , wherein the repair material is molybdenum hexacarbonyl.
12. The repair apparatus of claim 9 , wherein the repair material is tungsten hexacarbonyl.
13. The repair apparatus of claim 8 , wherein the heating unit is further utilized to heat the repair line formed by the repair unit through laser beams.
14. The repair apparatus of claim 8 , wherein a heating unit is further utilized to make a surface of the repair line reach a predetermined temperature, wherein the predetermined temperature is larger than a melting point of the repair material and less than a boiling point of the repair material.
15. A method for repairing a broken line of an array substrate, the method comprising the following steps of:
forming a repair line on a broken-line defect of a wire on the array substrate; and
heating the formed repair line.
16. The method of claim 15 , wherein the step of forming the repair line on the broken-line defect of the wire on the array substrate specifically comprises:
removing a protective layer on both ends of the broken-line defect to expose the both ends of the broken-line defect; and
forming the repair line on the broken-line defect by using a repair material for connecting the wire.
17. The method of claim 16 , wherein the repair material is chromium hexacarbonyl, molybdenum hexacarbonyl, or tungsten hexacarbonyl.
18. The method of claim 15 , wherein the step of heating the formed repair line specifically comprises:
heating the formed repair line by a laser beam heat treatment.
19. The method of claim 15 , wherein the step of heating the formed repair line specifically comprises:
making a surface of the repair line reach a predetermined temperature, wherein the predetermined temperature is larger than a melting point of the repair material and less than a boiling point of the repair material.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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CN201210226443.3 | 2012-07-03 | ||
CN2012102264433A CN102759829A (en) | 2012-07-03 | 2012-07-03 | Broken line repairing device and method of array substrate |
PCT/CN2012/078316 WO2014005331A1 (en) | 2012-07-03 | 2012-07-06 | Array substrate broken line repairing device and repairing method |
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Publication Number | Publication Date |
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US20140008345A1 true US20140008345A1 (en) | 2014-01-09 |
Family
ID=49877734
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US13/641,746 Abandoned US20140008345A1 (en) | 2012-07-03 | 2012-07-06 | Apparatus and method for repairing broken line of array substrate |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140374919A1 (en) * | 2013-06-24 | 2014-12-25 | Imec | Method for Producing Contact Areas on a Semiconductor Substrate |
JP2016524808A (en) * | 2013-04-23 | 2016-08-18 | アイクストロン、エスイー | MOCVD layer growth method with subsequent multi-step cleaning steps |
JP2019514075A (en) * | 2016-05-11 | 2019-05-30 | 深▲せん▼市華星光電技術有限公司Shenzhen China Star Optoelectronics Technology Co., Ltd. | Repair method of TFT substrate disconnection |
CN111491756A (en) * | 2017-12-22 | 2020-08-04 | 伊利诺斯工具制品有限公司 | System, method and apparatus for welding by preheating welding wire and inductively heating workpiece |
US11302723B2 (en) | 2017-07-28 | 2022-04-12 | Boe Technology Group Co., Ltd. | Electrical connection method, substrate and display device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4778693A (en) * | 1986-10-17 | 1988-10-18 | Quantronix Corporation | Photolithographic mask repair system |
-
2012
- 2012-07-06 US US13/641,746 patent/US20140008345A1/en not_active Abandoned
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4778693A (en) * | 1986-10-17 | 1988-10-18 | Quantronix Corporation | Photolithographic mask repair system |
Non-Patent Citations (1)
Title |
---|
Machine Translation of JP 07-240462 (1995), Fujitsu, performed on 12/23/2014 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016524808A (en) * | 2013-04-23 | 2016-08-18 | アイクストロン、エスイー | MOCVD layer growth method with subsequent multi-step cleaning steps |
US20140374919A1 (en) * | 2013-06-24 | 2014-12-25 | Imec | Method for Producing Contact Areas on a Semiconductor Substrate |
JP2019514075A (en) * | 2016-05-11 | 2019-05-30 | 深▲せん▼市華星光電技術有限公司Shenzhen China Star Optoelectronics Technology Co., Ltd. | Repair method of TFT substrate disconnection |
US11302723B2 (en) | 2017-07-28 | 2022-04-12 | Boe Technology Group Co., Ltd. | Electrical connection method, substrate and display device |
CN111491756A (en) * | 2017-12-22 | 2020-08-04 | 伊利诺斯工具制品有限公司 | System, method and apparatus for welding by preheating welding wire and inductively heating workpiece |
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