US20120250385A1 - Temperature detecting apparatus, temperature detecting circuit and power semiconductor module - Google Patents
Temperature detecting apparatus, temperature detecting circuit and power semiconductor module Download PDFInfo
- Publication number
- US20120250385A1 US20120250385A1 US13/436,042 US201213436042A US2012250385A1 US 20120250385 A1 US20120250385 A1 US 20120250385A1 US 201213436042 A US201213436042 A US 201213436042A US 2012250385 A1 US2012250385 A1 US 2012250385A1
- Authority
- US
- United States
- Prior art keywords
- circuit
- temperature
- signal
- temperature detecting
- pulse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/02—Means for indicating or recording specially adapted for thermometers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
- H02M1/327—Means for protecting converters other than automatic disconnection against abnormal temperatures
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
- H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature
Definitions
- the present disclosure relates to a temperature detecting apparatus, a temperature detecting circuit, and a power semiconductor module, and more particularly, to a temperature detecting apparatus of a switching element constituting an inverter device, a temperature detecting circuit of a switching element constituting an inverter device, and a power semiconductor module including a temperature detection diode for detecting a temperature of a power switching element.
- An electric motor combined with an engine is used as a power source of a hybrid automobile, electric automobile, etc.
- an inverter is used to obtain a predetermined torque frequency.
- the inverter is assembled within an automobile and is required to be small with high power in order to secure space for passengers.
- An operation temperature of the inverter greatly changes according to the driving environment of the automobile, and in particular, in case of an automobile including an inverter mounted in an engine compartment, the inverter has a high temperature due to an influence of heat generated from the engine.
- a switching element within the inverter may cause the temperature to rise due to an influence of a normal loss caused from a current flowing to the switching element itself and a switching loss caused from the turn-on and off of the switching element, and when the temperature exceeds a predetermined level, the switching element may be damaged.
- a photocoupler includes a light emitting diode (LED) located at a transmitter and a photodiode placed at a receiver.
- the LED is disposed at a high voltage temperature detecting circuit and the photodiode is disposed at a low voltage substrate so that an operation voltage of the LED and that of the photodiode are different, the LED and photodiode cannot be manufactured on a common substrate, and it is difficult to form the LED and photodiode on an identical package.
- a circuit for generating an analog triangular wave is affected by a change in temperature in the outer environment, a change in a power source voltage, etc.
- the circuit cannot generate a stable analog triangular waveform, a problem arises in that precision of a duty cycle of an output pulse signal output from a comparator cannot be improved.
- an inverter circuit and a diode for detecting temperature are mounted on an identical substrate and made into a chip.
- IGBT Insulated Gate Bipolar transistor
- temperature detection is performed.
- the diode for detecting temperature and a temperature detecting circuit are formed as separate chips, detection precision is degraded due to an influence of non-uniformity of the semiconductor elements.
- a usage limitation temperature junction temperature
- the present disclosure provides some embodiments of a temperature detecting apparatus capable of forming a temperature detecting circuit and an insulating element on the same substrate and reducing the size of an overall apparatus.
- the present disclosure provides some embodiments of a temperature detecting circuit capable of increasing a degree of precision of a duty cycle with an output pulse signal configured to control a temperature rise, etc.
- the present disclosure provides some embodiments of a power semiconductor module capable of forming a diode configured to detect temperature and a temperature detecting circuit as one chip and increasing the degree of precision in detecting the temperature.
- a temperature detecting apparatus includes a temperature detecting circuit configured to output a first pulse signal according to a temperature detected by a temperature sensor; and an insulating transformer configured to transmit the first pulse signal to an integrated circuit which is operated at an operation voltage different from that of the temperature detecting circuit.
- the insulating transformer is installed between the temperature detecting circuit and the integrated circuit. In this configuration, the temperature detecting circuit and the insulating transformer are mounted on a common substrate.
- a temperature detecting circuit includes an AD conversion circuit configured to convert a temperature detection signal from a temperature sensor into a digital temperature detection signal, a triangular wave generation circuit configured to output a digital signal equivalent to a triangular waveform as a time series, and a comparator configured to compare the digital temperature detection signal output from the AD conversion circuit and the digital signal output from the triangular wave generation circuit and output a duty signal.
- a power semiconductor module includes a power element circuit configured by a power switching element, a temperature detecting diode configured to measure a temperature of the power switching element, and a temperature detecting circuit configured to detect a temperature by a voltage signal from the temperature detecting diode.
- the temperature detecting diode and the temperature detecting circuit are formed on a single chip as an SOI structure.
- FIG. 1 is a view illustrating a circuit configuration of an insulating signal transmission circuit used in a temperature detecting apparatus of a first embodiment.
- FIG. 2 is a view illustrating a circuit configuration of the temperature detecting apparatus of the first embodiment.
- FIG. 3 is a view illustrating an example of an insulating transformer stacked structure disposed in the temperature detecting apparatus of the first embodiment.
- FIGS. 4A to 4C are views illustrating a mounted state of circuit elements of the temperature detecting apparatus of the first embodiment.
- FIG. 5 is a view illustrating a configuration example of a device using the temperature detecting apparatus of the first embodiment.
- FIG. 6 is a view illustrating a circuit configuration example of a temperature detecting circuit of the first embodiment.
- FIG. 7 is a view illustrating a circuit configuration of a temperature detecting circuit of a second embodiment.
- FIG. 8 is a view illustrating a time chart in a digital comparison circuit of the circuit of FIG. 7 .
- FIG. 9 is a view illustrating a block configuration of a driving type device using a power semiconductor module of a third embodiment.
- FIG. 10 is a view illustrating a circuit configuration of the power semiconductor module of the third embodiment.
- FIG. 11 is a view illustrating a circuit configuration example of a temperature detecting circuit of the third embodiment.
- embodiments described hereinafter exemplify an apparatus or a method for embodying a technical concept of the present disclosure, and in embodiments of the present disclosure, materials, configurations, depositions and the like of constituent elements are not specified to those described hereinafter.
- the embodiments of the present disclosure may be variably modified in the scope of claims.
- a temperature detecting apparatus of the first embodiment includes a temperature detecting circuit 76 (shown in FIG. 5 ) configured to output a first pulse signal according to a temperature detected by a temperature sensor 35 (shown in FIG. 2 ), and insulating transformers 70 and 71 (shown in FIG. 2 ) configured to transmit the first pulse signal to an integrating circuit which operates at an operation voltage different from that of the temperature detecting circuit 76 .
- the insulating transformers 70 and 71 are installed between the temperature detecting circuit 76 and the integrated circuit.
- the temperature detecting circuit 76 and the insulating transformers 70 and 71 are mounted on a common substrate.
- primary coils 70 a and 71 a through which currents flow based on the first pulse signal from the temperature detecting circuit 76 , and secondary coils 70 b and 71 b which are configured to generate a current to be transmitted to the integrated circuit may be formed at upper and lower portions of the insulating transformers 70 and 71 with a dielectric layer interposed therebetween.
- the temperature detecting circuit 76 outputs a second pulse signal when the temperature detected by the temperature sensor 35 reaches a predetermined limit value, and the insulating transformers 70 and 71 are configured to transmit the second pulse signal from the temperature detecting circuit 76 to the integrated circuit.
- Pulse generators 4 and 5 which shape pulse widths of a high level and a low level of the first pulse signal or the second pulse signal, generate a pulse having a width smaller than those of the pulse signals and output the same, are installed in the vicinity of the primary coils of the insulating transformers 70 and 71 .
- a signal demodulation circuit which is configured to demodulate a pulse signal having a waveform shaped by the pulse generators 4 and 5 into a signal having the original pulse width, may be configured behind the secondary coil of the insulating transformers 70 and 71 , which are configured to generate a current to be transmitted to the integrated circuit.
- An insulating signal transmission circuit 1000 illustrated in FIG. 1 includes a primary circuit 80 and a secondary circuit 81 .
- the insulating signal transmission circuit 1000 executes the transmission of a signal from the primary circuit 80 to the secondary circuit 81 and conversely executes the transmission of a signal from the secondary circuit 81 to the primary circuit 80 , as well as executing insulation between the primary circuit 80 and the secondary circuit 81 .
- a circuit for controlling a signal transmission is included in the insulating signal transmission circuit 1000 .
- the primary circuit 80 may be used as a high voltage circuit and the secondary circuit 81 may be used as a low voltage circuit.
- the primary circuit 80 and the secondary circuit 81 are configured as symmetrical circuits, and here, the primary circuit 80 may be used as a low voltage circuit and the secondary circuit 81 may be used as a high voltage circuit.
- the primary circuit 80 includes a UVLO (Undervoltage-Lockout; low voltage malfunction preventing) circuit 1 , inverters 2 , 3 , 6 , and 7 , the pulse generators 4 and 5 , an RS flip-flop 8 , a buffer 9 , and a resistor 10 .
- the inverter 2 and the resistor 10 may function as a buffer.
- the UVLO (low voltage malfunction preventing) circuit 1 monitors a power source voltage VCC 1 . When the power source voltage VCC 1 is lower than a predetermined voltage, the UVLO (low voltage malfunction preventing) circuit 1 stops the pulse generators 4 and 5 or the RS flip-flop 8 and locks out an operation of stopping input/output signals. Further, when the power source voltage VCC 1 is returned to have a normal voltage value, the UVLO circuit 1 is released to start a normal operation.
- Insulting transformers 31 and 32 are installed to link the primary circuit 80 and the secondary circuit 81 .
- the insulating transformer 31 is composed of an inductor 31 a and an inductor 31 b insulated from the inductor 31 a.
- the insulating transformer 32 is composed of an inductor 32 a and an inductor 32 b insulated from the inductor 32 a.
- the insulating transformer 31 insulating the primary circuit 80 and the secondary circuit 81 , transmits a signal from the primary circuit 80 to the secondary circuit 81 .
- the insulating transformer 32 transmits a signal from the secondary circuit 81 to the primary circuit 80 , even while insulating the primary circuit 80 and the secondary circuit 81 .
- the secondary circuit 81 includes a UVLO (low voltage malfunction preventing) circuit 11 , inverters 12 and 13 , pulse generators 14 and 15 , inverters 16 and 17 , an RS flip-flop 18 , a buffer 19 , and a resistor 20 .
- UVLO low voltage malfunction preventing
- the inverter 12 and the resistor 20 also achieve the role of a buffer.
- the UVLO (low voltage malfunction preventing) circuit 11 monitors a power source voltage VCC 2 , and its operation is the same as that of the UVLO circuit 1 , so a description thereof will be omitted.
- the pulse generators 4 and 5 shape the input pulse signal such that a pulse width thereof is narrowed, and output the shaped pulse signal. Since the pulse signal is formed to have high and low level pulses being alternated, the pulse generator 4 configured to narrow the high level pulse width and the pulse generator 5 configured to narrow the low level pulse width are installed.
- the pulse generators 14 and 15 shape the input pulse signal such that a pulse width thereof is narrowed, and output the shaped pulse signal.
- the pulse generator 14 configured to narrow the high level pulse width and the pulse generator 15 configured to narrow the low level pulse width are installed.
- the pulse generators 4 , 5 , 14 , and 15 generate a pulse having a width narrower than that of the original signal by using the rise of the pulse signal as a trigger, and all of the pulse generators may have the same circuit configuration.
- the primary circuit 80 is configured to be grounded at GND 1
- the secondary circuit 81 is configured to be grounded at the GND 2 .
- the primary circuit 80 and the secondary circuit 81 are not configured to have a common ground line, so a ground potential of the primary circuit 80 and that of the secondary circuit 81 are different.
- the pulse signal input to the terminal IN 1 of the primary circuit 80 is inverted in the inverter 2 .
- the inverted signal is input to the pulse generator 5 .
- the pulse generator 5 generates a pulse having a width narrower than that of the original pulse signal by using the rise of the inverted signal as a trigger, and then outputs the pulse to the primary inductor 31 a of the insulating transformer 31 . Due to a change in current in response to the pulse supplied to the primary inductor 31 a of the insulating transformer 31 , a current is generated from the secondary inductor 31 b of the insulating transformer 31 , and then supplied to the RS flip-flop 18 through the inverters 16 and 17 .
- Whether a high level signal is to be input to a terminal S or to a terminal R of the RS flip-flop 18 is determined by a direction of the current flowing across the secondary inductor 31 b.
- a high level signal is input to the terminal R of the RS flip-flop 18 and a low level signal is input to the terminal S, and an output Q has a low level signal.
- the low level signal from the output Q is output to OUT 1 through the buffer 19 .
- the pulse supplied to the primary inductor 31 a of the insulating transformer 31 is based on the inverted signal of the pulse signal input to the terminal IN 1 , the pulse was generated in response to the drop of the pulse signal input to the terminal IN 1 .
- the insulating transformer 31 is operated based on a low level pulse of the pulse signal input to the terminal IN 1 to generate a low level pulse in the RS flip-flop 18 , and this causes the low level pulse portion of the pulse signal input to the terminal IN 1 to be demodulated.
- the inverted signal which was inverted in the inverter 2 is again inverted in the inverter 3 so as to be returned to its original state, that is, the state of the pulse signal which was input to the terminal IN 1 .
- the pulse generator 4 uses the rise of the pulse signal as a trigger, the pulse generator 4 generates a pulse having a width narrower than that of the original signal and outputs the pulse to the primary inductor 31 a of the insulating transformer 31 . Due to a change in current according to the pulse supplied to the primary inductor 31 a of the insulating transformer 31 , a current is generated from the secondary inductor 31 b of the insulating transformer 31 , and then supplied to the RS flip-flop 18 through the inverters 16 and 17 .
- the direction of the current flowing across the primary inductor 31 a is opposite, so the direction of the current flowing across the secondary inductor 31 b is also opposite.
- a high level signal is input to the terminal S of the RS flip-flop 18 and a low level signal is input to the terminal R, so that the output Q has a high level signal.
- the high level signal from the output Q is output to OUT 1 through the buffer 19 .
- the insulating transformer 31 is operated based on the high level pulse of the pulse signal input to the terminal IN 1 , and a high level pulse is generated from the RS flip-flop 18 , which causes the high level pulse portion of the pulse signal input to the terminal IN 1 to be demodulated.
- the pulse signal input to the primary circuit 80 can be demodulated by the secondary circuit 81 , while restraining power consumption for driving the insulating transformer 31 .
- the external temperature sensor 35 is configured to include two diodes connected in series.
- the temperature sensor 35 is installed in the vicinity of a switching element such as a power transistor.
- the diodes as a temperature sensor has the characteristic that a forward voltage is reduced when the temperature is increased under a condition of a constant current.
- the temperature of a switching element such as a power transistor may be measured by supplying a predetermined current to the diode and measuring a forward voltage.
- a constant current source includes an amplifier 41 functioning as an operational amplifier, a FET 42 , and a current mirror circuit 43 .
- the current mirror circuit 43 includes P type MOSFETs 43 a and 43 b. A gate of the FET 43 a and a gate of the FET 43 b are connected, and a drain of the FET 43 a and a drain of the FET 43 b are also connected. The FET 43 b is also connected to a diode.
- the amplifier 41 and the N type MOSFET 42 constitute a power amplifier.
- a temperature detection voltage TAIN detected by the temperature sensor 35 is input to an AD conversion circuit 44 .
- the AD conversion circuit 44 is configured as a so-called sequential comparison AD conversion circuit.
- the TAIN signal converted into a digital value in the AD conversion circuit 44 is input to a digital comparison circuit 45 .
- the digital comparison circuit 45 is configured as a counter, a digital comparator, or the like.
- An oscillation circuit 46 generates a clock pulse of a predetermined frequency, and the clocks from the oscillation circuit 46 are counted by a counter within the digital comparison circuit 45 to generate a digital triangular signal.
- the digital comparison circuit 45 includes a digital comparator to compare the digital triangular signal and the TAIN signal which has been converted into a digital value. When the TAIN signal having a digital value is greater than the digital triangular signal, the digital comparison circuit 45 outputs a high level signal. When the TAIN signal having a digital value is smaller than the digital triangular signal, the digital comparison circuit 45 outputs a low level signal.
- the output signal from the digital comparison circuit 45 is then output to an inverter circuit.
- the inverter circuit includes an N type MOSFET 37 and a P type MOSFET 36 .
- a source of the FET 36 and a drain of the FET 37 are connected, and a gate of the FET 36 and a gate of the FET 37 are also connected.
- An output signal from the digital comparison circuit 45 is input to the gate of the FET 36 and the gate of the FET 37 .
- the output signal from the digital comparison circuit 45 is inverted by the inverter according to the FETs 36 and 37 so as to be output as a TOUT signal. Further, a signal of a terminal VTO indicates a high level value of the TOUT signal. Thus, the size of the temperature from the temperature sensor 35 is detected by a pulse width of the TOUT signal or by a duty signal.
- the FAL signal indicates that the temperature detected by the temperature sensor 35 is considerably high, while the temperature detection voltage signal TAIN is extremely low. That is, the FAL signal is generated when the temperature detected by the temperature sensor 35 reaches a limit value.
- a DC power source is connected to a minus terminal of a comparator 49 .
- a voltage value of the DC power source is set to be a voltage corresponding to the limit value of the temperature.
- the temperature detection voltage signal TAIN is input to a plus terminal of the comparator 49 .
- a high level signal is output from the comparator 49 .
- the high level signal from the comparator 49 is input to the gate of an N type MOSFET 38 . Accordingly, the FET 38 is turned on and the FAL terminal has a low level.
- the output from the comparator 49 is reversed into a low level signal.
- the low level signal from the comparator 49 is input to the gate of the N type MOSFET 38 . Accordingly, the FET 38 is turned off and the FAL terminal has a high level. In this manner, it is detected that a temperature rise of the temperature detection target has reached a limit.
- the FAL signal is transmitted to an external control device or the like, and used as a control signal for stopping an operation of the temperature detection target, etc.
- a temperature detecting apparatus 90 of FIG. 2 is configured by combining the insulating signal transmission circuit 1000 of FIG. 1 and the temperature detecting circuit 76 of FIG. 5 .
- Circuit elements denoted by the same reference numerals as those of the temperature detecting circuit of FIG. 6 perform the same operations as those of the circuits of FIG. 6 , so a description of the temperature detecting circuit as a high voltage side circuit will be omitted.
- a bi-directional signal transmission is not performed between the primary circuit and the second circuit separated in an insulating transformer circuit 101 , and a uni-directional signal is transmitted from the temperature detecting circuit 100 to a signal demodulation circuit 102 .
- a pulse generator which shapes an input pulse signal such that it has a narrow pulse width and outputs the pulse signal is installed only in the temperature detecting circuit 100 .
- the signals output from the temperature detecting circuit 100 are two types of signals, namely, a TOUT signal as a temperature detection signal and a FAL signal indicating that the temperature has reached a limit temperature.
- a pulse generator for narrowing a pulse width of a high level of the input pulse signal and a pulse generator for narrowing a pulse width of a low level of the input pulse signal are required.
- a first pulse generator 52 and a second pulse generator 53 are installed so that they transmit the pulse signal corresponding to the detected temperature output from the digital comparison circuit 45 .
- a third pulse generator 54 and a fourth pulse generator 55 are installed for transmitting the FAL signal, which indicates that the temperature has reached a limit temperature output from the comparator 49 .
- the configurations in FIGS. 1 and 2 may correspond to each other as follows.
- the inverter 2 in FIG. 1 corresponds to an inverter 47 in FIG. 2
- the inverter 3 corresponds to an inverter 48
- the pulse generator 4 corresponds to the first pulse generator 52
- the pulse generator 5 corresponds to the second pulse generator 53
- the insulating transformer 31 corresponds to the insulating transformer 70
- the inverter 16 corresponds to an inverter 56
- the inverter 17 corresponds to an inverter 57
- the RS flip-flop 18 corresponds to an RS flip-flop 60
- the buffer 19 corresponds to a buffer 62 .
- FIG. 2 since the operation of FIG. 2 is the same as that of FIG. 1 as described above, a description of the corresponding circuits of FIG. 2 and a description of the signal demodulation circuit 102 will be omitted.
- an inverter 50 , an inverter 51 , the third pulse generator 54 , the fourth pulse generator 55 , the insulating transformer 71 , an inverter 58 , an inverter 59 , an RS flip-flop 61 , and a buffer 63 which constitute a signal system for transmitting and demodulating the FAL signal output from a comparator 49 , are operated as described above, so a description thereof will also be omitted.
- the temperature detecting circuit 100 and the insulating transformer circuit 101 are formed on the same substrate (the same frame).
- the insulating transformer circuit 101 to which a power source voltage is not required to be supplied, can obtain a current signal according to a magnetic mutual induction, so the insulating transformer circuit 101 may use a common substrate with the temperature detecting circuit 100 .
- FIGS. 4A to 4C A state in which the temperature detecting apparatus of FIG. 2 as a package is mounted on the substrate is shown in FIGS. 4A to 4C .
- FIG. 4A shows a photograph image of an interior viewed from a package surface.
- FIG. 4B is an enlarged photograph image of FIG. 4A , in which the object positioned at the center is equivalent to the insulating transformer circuit 101 . Further, the object disposed at the left of the object positioned at the center is equivalent to the temperature detecting circuit 100 , and the object disposed at the right of the object disposed at the center is equivalent to the signal demodulation circuit 102 , both of which are opposite each other.
- a plastic mold is formed at a portion S between the insulating transformer and the signal demodulation circuit.
- the insulating transformer is configured as a chip and is formed on the same substrate on which the temperature detecting circuit is formed, and a copper island is formed on a rear surface thereof.
- FIG. 4C shows a structure projected from the rear surface on which the copper island is formed. A bonding pad is formed on the copper island, and a copper coil is formed at an inner side of the copper island.
- FIG. 3 A stacked structure of the insulating transformer formed as a chip is shown in FIG. 3 .
- a silicon (Si) substrate is formed on the copper island, and a primary or secondary copper coil is formed on the silicon substrate.
- a dielectric layer made of SiO 2 or the like is stacked to cover the copper coil.
- a secondary or primary copper coil is formed on the dielectric layer. In this manner, the primary coil and the secondary coil are electrically insulated by the dielectric layer.
- FIG. 4C is a rear projected view of this.
- FIG. 5 illustrates an example of a driving system apparatus 400 in which signals are transmitted in both directions between a low voltage substrate 410 and a high voltage substrate 411 of an automobile.
- the low voltage substrate 410 is mainly configured by an ECU 72 .
- ECU is called an electronic control unit or an engine control unit, which executes controlling of an engine, controlling of a driving system or a steering system, etc., by a computer.
- the high voltage substrate 411 includes a power semiconductor module 77 for driving a motor 412 .
- An insulating gate bipolar transistor (IGBT) is illustrated as a power switching element of the power semiconductor module 77 .
- a gate of each IGBT is connected to a gate driver 75 .
- a control signal output from the ECU 72 is transmitted to the gate driver 75 through an isolator 73 .
- a driving signal from the gate driver 75 is output according to the control signal from the ECU 72 .
- PWM Pulse-width modulation
- six IGBTs of the power semiconductor module 77 are turned on or off at a desired timing to generate 3-phase AC power for driving the motor 412 .
- the temperature is detected by a temperature sensor (not shown) installed in the vicinity of the IGBTs of the power semiconductor module 77 , and the detected signal is input to the temperature detecting circuit 76 and converted into a pulse signal so as to be output and transmitted to the ECU 72 through an isolator 74 .
- a photocoupler is used as an isolator, but in the present embodiment, an insulating transformer is used and a temperature detecting apparatus 90 formed by packaging a temperature detecting circuit 76 and the isolator 74 is used.
- the temperature detecting apparatus 90 of FIG. 5 is the temperature detecting apparatus 90 illustrated in FIG. 2 .
- a low voltage substrate and a high voltage substrate are connected, the low voltage substrate and the high voltage substrate are insulated, and a power card is mounted on the high voltage substrate.
- the power card is packaged by mounting a power switching element and a diode as a temperature sensor thereon.
- the power switching element constitutes an inverter connected to a rotary electric machine used for running a vehicle.
- the rotary electric machine used for running a vehicle may be a rotary electric machine as a main machine for a vehicle, a generator for charging a high voltage battery for supplying power to the rotary electric machine as the main machine for a vehicle, etc.
- the temperature sensor is disposed in the vicinity of the power switching element to detect the temperature.
- a temperature detecting circuit configured to change a temperature detection signal into a PWM signal is mounted on the high voltage substrate.
- the low voltage substrate and the high voltage substrate are insulated by a photocoupler, and the photocoupler is an insulating unit for transmitting a signal from one of the substrates to the other, while insulating both substrates.
- the photocoupler may be used as an insulating element for insulating the high voltage substrate and the low voltage substrate, so the photocoupler and the temperature detecting circuit are separately installed in a package, rather than being disposed on the same substrate.
- the photocoupler may include a light emitting diode (LED) of a transmission side and a photodiode of a reception side.
- the LED is disposed at the temperature detecting circuit of a high voltage side and the photodiode is disposed at a low voltage substrate. In this manner, an operation voltage of the LED and that of the photodiode are different and cannot be manufactured on a common substrate, and it is difficult to form the LED and the photodiode in the same package.
- the insulating transformers 70 and 71 are formed between the temperature detecting circuit 100 for outputting the first pulse signal according to a temperature detected by the temperature sensor 35 and an integrated circuit operating at an operation voltage different from that of the temperature detecting circuit 100 , and the first pulse signal is transmitted from the temperature detecting circuit 100 to the integrated circuit, while maintaining an insulating state between the insulating transformers 70 and 71 .
- a temperature detecting circuit 201 of the second embodiment includes an AD conversion circuit 107 , a triangular wave generation circuit (a first counter 162 and an oscillator circuit 163 ), and a comparator 161 .
- the AD conversion circuit 107 is configured to convert a temperature detection signal from a temperature sensor 121 into a digital value.
- the triangular wave generation circuit is configured to output a digital signal equivalent to a triangular wave as a time series.
- the comparator 161 is configured to compare the digital temperature detection signal output from the AD conversion circuit 107 and the digital signal output from the triangular wave generation circuit. A duty signal is output from the comparator 161 .
- a period for executing a comparison process in the comparator 161 includes four cycles, one cycle of which is defined as a section from a maximum value of the triangular wave to a next maximum value of the triangular wave or a section from a minimum value of the triangular wave to a next minimum value of the triangular wave.
- a duty ratio is determined by the first two cycles.
- a detection signal may be output from the comparator 161 .
- the temperature sensor 121 may include an element which operates with a constant current and has the voltage changing in response to a temperature.
- a constant current source from which a current flows to the temperature sensor 121 , is configured to include a current mirror circuit 301 and change the current flowing to a temperature sensor 121 based on a value of a resistor connected to the current mirror circuit 301 .
- an external temperature sensor 121 is configured to include two diodes connected in series.
- the temperature sensor 121 is installed in the vicinity of a switching element such as a power transistor.
- the diodes as a temperature sensor has the characteristic that a forward voltage is reduced if the temperature is increased under a condition of a constant current.
- the temperature of a switching element such as a power transistor may be measured by supplying a predetermined current to the diode and measuring a forward voltage.
- a constant current source includes variable resistors 151 and 152 , an amplifier 302 functioning as an operational amplifier, a FET 303 , and the current mirror circuit 301 .
- a reference voltage generation circuit 105 functions to adjust a voltage required for a particular element within the temperature detecting circuit 210 from a power source voltage VCC, and to supply the same.
- the reference voltage generation circuit 105 may be configured to generate an output voltage of 1.25V.
- the current mirror circuit 301 includes P type MOSFETs 112 and 113 . A gate of the FET 112 and a gate of the FET 113 are connected, and a drain of the FET 112 and a drain of the FET 113 are also connected. The FET 113 is also connected to a diode.
- the amplifier 104 functioning as an operational amplifier amplifies a voltage generated by the reference voltage generation circuit 105 and supplies the same to the AD conversion circuit 107 .
- a variable resistor 141 is installed between a minus input terminal and an output terminal of the amplifier 104 .
- a variable resistor 142 installed between the minus input terminal of the amplifier 104 and GND is connected in series to the variable resistor 141 .
- An output voltage of the amplifier 104 is adjusted by the variable resistors 141 and 142 and supplied to the AD conversion circuit 107 . For example, as illustrated in the FIG. 7 , it is set to be 3.3V.
- the AD conversion circuit 107 includes a sequential comparison register 171 , a DA converter 172 , an analog comparator 173 , a register 174 , and a DA converter 175 .
- the AD conversion circuit 107 is a so-called sequential comparison AD conversion circuit.
- the sequential comparison register 171 is a register which sequentially creates approximate values continuously. First, if there is a command for starting conversion, the sequential comparison register 171 sets an MSB as 1. This result is D/A converted by the DA converter 172 so as to be returned to an analog amount and then compared with a temperature detection voltage in the comparator 173 . In this case, if the voltage value of the temperature detection voltage is higher, the MSB remains as 1.
- the second bit of the sequential comparison register 171 is also set to be 1. This result is D/A converted by the DA converter 172 so as to be returned to an analog amount and compared with the temperature detection voltage in the comparator 173 . If the temperature detection voltage is lower, the second bit of the sequential comparison register 171 is returned to 0. In this manner, the sequential bits are set and compared, starting from the MSB to an LSB, and if the bit is greater than the temperature detection voltage, the value is reset, and if it is smaller, the value remains as is, and this operation is continuously performed. If the operation continues up to the LSB, only a digital amount closest to the temperature detection voltage remains. The digital value is extracted and stored in the register 174 .
- the digital signal of the temperature detection voltage retained in the register 174 is output to a digital comparison circuit 200 .
- every signal is processed into a digital signal.
- the digital comparison circuit 200 includes the comparator 161 , the first counter 162 , the oscillator circuit 163 , and a second counter 164 .
- a digital value of the register 174 and an output value of the first counter 162 are digitally compared in the comparator 161 , and if the digital value of the register 174 is greater than the output value of the first counter 162 , a high level signal is output. Also, if the digital value of the register 174 is smaller than the output value of the first counter 162 , a low level signal is output.
- the oscillator circuit 163 Since the oscillator circuit 163 generates a clock signal of a predetermined period, the number of clocks is counted by the first counter 162 .
- the first counter 162 sequentially outputs the values obtained by counting the clocks from the oscillator circuit 163 to the comparator 161 .
- FIG. 8 is a time chart of the digital comparison circuit 200 , which mainly shows data compared in the comparator 161 and a time chart of an output from the comparator 161 .
- a clock from the oscillator circuit 163 is also input to the second counter 164 .
- the second counter 164 is used to cancel an offset of the comparator 173 and set to count up to a digital value equivalent to an offset amount of the comparator 173 . If the oscillator circuit 163 operates, the second counter 164 executes counting until such time that it reaches an amount equivalent to the offset of the comparator 173 , and outputs a corresponding value to the DA converter 175 .
- the input digital value from the second counter 164 is converted into an analog amount by the DA converter 175 and input to an offset adjustment terminal of the comparator 173 . Accordingly, the offset of the comparator 173 is canceled.
- a digital value of the temperature detection voltage value supplied from the register 174 to the comparator 161 is shown as the TAIN signal in FIG. 8 .
- the TAIN signal and a count value equivalent to the triangular wave output from the first counter 162 are compared.
- the period for performing the comparison is determined to include 2 cycles, in which one cycle is composed of a DutyHi period and a DutyLo period, as shown in each period T 0 to T 4 .
- the DutyHi period corresponds to a period from a maximum value to a next maximum value or corresponding to a period from a minimum value to a next minimum value in the triangular wave.
- the DutyLo period is a next period of the DutyHi period, and corresponds to a period from a maximum value to a next maximum value or a period from a minimum value to a next minimum value in the triangular wave.
- one period starting from a maximum value of the triangular wave to a next maximum value or one period from a minimum value of the triangular wave to a next minimum value may be set to be 2.5 msec.
- the period T 1 includes two DutyHi periods and two DutyLo periods, but during the first DutyHi period and the first DutyLo period, the results obtained by comparing the triangular wave and Ni are output from the comparator 161 .
- a comparison process is not executed and a pulse of a high level having a width of 2.5 msec and a pulse of a low level having a width of 2.5 msec in a period of the triangular wave are output.
- the operation of the period T 1 as described above is also executed during T 2 , T 3 , and T 4 .
- TAIN if TAIN is maintained in the state of 90% line N 1 of the maximum value of the triangular wave, like the operation during the period T 1 , a high level pulse having a pulse width of 2.25 msec is output during the first DutyHi period, and a low level pulse having a pulse width of 2.75 msec is output during the first DutyLo period.
- a comparison process is not executed and a pulse of a high level having a width of 2.5 msec and a pulse of a low level having a width of 2.5 msec in a period of the triangular wave are output. This state is illustrated in FIG. 8 .
- TAIN is in the state of 10% line N 2 of the maximum value of the triangular wave.
- the triangular wave and N 2 are compared in the comparator 161 , and a high level signal is output during a period in which N 2 is higher than the triangular wave and a low level signal is output during a period in which N 2 is lower than the triangular wave.
- a high level pulse having a pulse width of 0.25 msec is output during the first DutyHi period, and a low level pulse having a pulse width of 4.75 msec is output during the first DutyLo period.
- a comparison process is not executed and a pulse of a high level having a width of 2.5 msec and a pulse of a low level having a width of 2.5 msec in a period of the triangular wave are output.
- the FAIL signal also present in a connection terminal will be described.
- FIG. 8 as shown by a relationship between the triangular wave and the TAIN signal during the period T 4 , it is an operation where the TAIN signal does not have a portion higher than that of the triangular waveform signal. This indicates that a temperature detected by the temperature sensor 121 is considerably high and the temperature detection voltage signal TAIN is extremely low.
- the comparator 161 in order to inform that the temperature rise of the temperature detection target has reached a limit, the comparator 161 outputs a low level signal.
- the low level signal from the comparator 161 is input to a gate of an N type MOSFET 109 . Accordingly, the FET 109 is turned off, and the FAIL terminal is changed to a high level state.
- the FAIL signal is transmitted to an external control device or the like, so as to be used as a control signal for stopping an operation of the temperature detection target, etc.
- a DC voltage level of the output signal from the comparator 161 is converted by the level shifter 108 , so a high level signal is converted into a low level signal, and a low level signal is converted into a high level signal.
- An output from the level shifter 108 is input to a gate of an N type MOSFET 111 and a gate of a P type MOSFET 110 .
- an inverter is configured with the FET 110 and the FET 111 .
- an output signal from the level shifter 108 is inverted by the inverter based on the FETs 110 and 111 .
- the output signal from the comparator 161 becomes the TOUT signal as is.
- the temperature detected by the temperature sensor 121 is converted into a pulse width of a pulse signal or a duty ratio and detected.
- a VTO signal illustrated in FIG. 8 indicates a high level value of the TOUT signal.
- the TOUT signal is used, for example, to control torque, as a switching frequency, etc.
- the temperature detection voltage signal is converted into a digital value and the triangular wave as a reference for comparison is formed as a digital signal.
- the comparison process is executed based on the digital values, the maximum value and the minimum value of the triangular wave, the slope of the triangular wave, etc., are not changed like in the case of an analog triangular wave, and a duty signal having extremely good precision can be obtained.
- a voltage is changed into a linear form over a temperature change. If a diode as a temperature sensor is installed in the vicinity of the switching element and a voltage is measured, temperature information having high precision and high response can be obtained. If the temperature information having high precision is obtained, torque can be output up to the proximity of a breakdown temperature of the switching element, and high density of the inverter can be expected.
- a comparator of the temperature detecting circuit compares a temperature detection voltage from a temperature sensor and a triangular wave generated by an analog circuit.
- the triangular wave and the temperature detection voltage are compared in the comparator, and, for example, the comparator is configured such that when the temperature detection voltage is higher than the triangular wave, an output from the comparator has a high level, and when the temperature detection voltage is lower than the triangular wave, an output from the comparator has a low level.
- the comparator since the temperature detection voltage is decreased as the temperature increases, the duty cycle of the pulse signal output from the comparator is changed, and a temperature is prevented from being increased by controlling torque or a switching frequency based on the pulse signal.
- a duty signal is generated by comparing an analog triangular waveform and a numeral value based on a command value.
- the output pulse signal from the comparator is determined by comparing the triangular wave and the temperature detection voltage.
- a maximum value and a minimum value of the analog triangular wave, and the slope of the triangular wave are required to be generated with good precision.
- the circuit for generating the analog triangular wave is affected by a temperature change of the outer environment, a change in a power source voltage, etc., and cannot generate a stable analog triangular waveform, so it is difficult to enhance the precision of the duty cycle of the output pulse signal output from the comparator.
- the temperature detecting circuit of the second embodiment includes the AD conversion circuit 107 , the triangular wave generation circuit (the first counter 162 , the oscillator circuit 163 ), and the comparator 161 .
- the AD conversion circuit 107 is configured to convert a temperature detection signal from the temperature sensor 121 into a digital value.
- the triangular wave generation circuit is configured to output a digital signal equivalent to a triangular waveform as a time series.
- the comparator 161 is configured to compare the digital temperature detection signal output from the AD conversion circuit 107 and the digital signal output from the triangular wave generation circuit. Further, a duty signal is output from the comparator 161 .
- the triangular waveform, as well as the temperature detection signal is provided as a digital signal, and there is no change in a maximum value and a minimum value of the triangular waveform, the slope of the triangular waveform, etc., a duty output signal having good precision can be obtained.
- a power semiconductor module 77 of the third embodiment includes a power element circuit configured by a power switching element (IGBT), a temperature detecting diode (i.e., a temperature sensor) 35 for measuring the temperature of the power switching element, and a temperature detecting circuit 77 a for detecting a temperature by a voltage signal from the temperature detecting diode 35 .
- the temperature detecting diode 35 and the temperature detecting circuit 77 a are formed on a single chip by an SOI structure.
- the chip and the power element circuit are formed on a common frame and installed in a single package.
- FIG. 9 illustrates an example of a driving system apparatus 400 in which signals are transmitted in both directions between a low voltage substrate 410 and a high voltage substrate 411 of an automobile.
- the low voltage substrate 410 is mainly configured by an ECU 72 .
- ECU is called an electronic control unit or an engine control unit, which executes controlling of an engine, controlling of a driving system or a steering system, etc., by a computer.
- the high voltage substrate 411 includes the power semiconductor module 77 having an inverter circuit 77 b for driving a motor 412 .
- the power semiconductor module 77 is formed as a single package, in which the temperature detecting circuit 77 a and the inverter circuit 77 b are formed.
- An insulating gate bipolar transistor (IGBT) is illustrated as a power switching element of the inverter circuit 77 b.
- a gate of each IGBT is connected to a gate driver 75 , and a flywheel diode is connected in parallel to each IGBT.
- a DC voltage is supplied from a DC power source 78 to each IGBT.
- a control signal output from the ECU 72 is transmitted to a gate driver 75 through an isolator 73 .
- a driving signal from the gate driver 75 is output according to the control signal from the ECU 72 .
- PWM controlling is performed by the driving signal, and six IGBTs of the inverter circuit 77 b are turned on or off at a desired timing to generate 3-phase AC power for driving the motor 412 .
- the temperature is detected by a temperature sensor (not shown) based on a diode installed in the vicinity of the IGBTs of the inverter circuit 77 b, and the detected signal is input to the temperature detecting circuit 77 a and converted into a pulse signal so as to be output and transmitted to the ECU 72 through an isolator 74 .
- a temperature sensor not shown
- the isolators 73 and 74 a photocoupler or an insulating transformer is used.
- the temperature detecting circuit 77 a and the temperature sensor 35 based on a diode are made into one chip by using an HT-SOI (Silicon on Insulator) structure in manufacturing a semiconductor stacked structure.
- the SOI structure is a technique of forming a thin insulating oxide film on a silicon substrate and further forming an electric circuit such as a transistor, a sensor, etc. thereon. This technique has a fast speed and high power characteristics with low power consumption in comparison to a general bulk CMOS technique.
- a junction temperature in the SOI structure is 225 degrees Celsius, and by executing one chip based on the SOI structure, stable temperature detection with high precision can be executed.
- the temperature sensor 35 and the temperature detecting circuit 77 a configured as one chip based on the SOI structure are installed in the same package with the inverter circuit 77 b. That is, the chip of the inverter circuit 77 b and the chip of the temperature detecting circuit 77 a including a temperature sensor are disposed on the same frame. Thus, the precision of temperature detection can be further improved.
- FIG. 10 illustrates a position of the disposition of the temperature sensor 35 configured as a diode in the power semiconductor module 77 of FIG. 9 .
- the temperature sensor 35 is installed in the vicinity of the IGBT. Further, the temperature sensor 35 is configured to include two diodes connected in series.
- the diodes as the temperature sensor have the characteristic that a forward voltage is reduced when the temperature is increased under the condition of a constant current.
- the temperature of a switching element such as a power transistor may be measured by supplying a predetermined current to the diode and measuring a forward voltage.
- FIG. 10 it is illustrated that the temperature detecting circuit 77 a and the temperature sensor 35 are separated, which makes understanding the disposition position of the temperature detecting diode easier, and as described above, the temperature detecting diode and the temperature detecting circuit 77 a are made into one chip by the SOI structure. Meanwhile, a control circuit 79 is installed as a circuit which outputs a control signal and includes a function of the gate driver 75 of FIG. 9 .
- a constant current source includes an amplifier 41 functioning as an operational amplifier, a FET 42 , and a current mirror circuit 43 .
- the current mirror circuit 43 includes P type MOSFETs 43 a and 43 b. A gate of the FET 43 a and a gate of the FET 43 b are connected, and a drain of the FET 43 a and a drain of the FET 43 b are also connected. The FET 43 b is also connected to a diode.
- the amplifier 41 and the N type MOSFET 42 constitute a power amplifier.
- a temperature detection voltage TAIN detected by the temperature sensor 35 is input to an AD conversion circuit 44 .
- the AD conversion circuit 44 is configured as a so-called sequential comparison AD conversion circuit.
- the TAIN signal converted into a digital value in the AD conversion circuit 44 is input to a digital comparison circuit 45 .
- the digital comparison circuit 45 is configured as a counter, a digital comparator, or the like.
- An oscillator circuit 46 generates a clock pulse of a predetermined frequency, and the clocks from the oscillator circuit 46 are counted by a counter within the digital comparison circuit 45 to generate a digital triangular signal.
- the digital comparison circuit 45 includes a digital comparator to compare the digital triangular signal and the TAIN signal which has been converted into a digital value. When the TAIN signal having a digital value is greater than the digital triangular signal, the digital comparison circuit 45 outputs a high level signal. When the TAIN signal having a digital value is smaller than the digital triangular signal, the digital comparison circuit 45 outputs a low level signal.
- the output signal from the digital comparison circuit 45 is then output to an inverter circuit.
- the inverter circuit includes an N type MOSFET 37 and a P type MOSFET 36 .
- a source of the FET 36 and a drain of the FET 37 are connected, and a gate of the FET 36 and a gate of the FET 37 are also connected.
- An output signal from the digital comparison circuit 45 is input to the gate of the FET 36 and the gate of the FET 37 .
- the output signal from the digital comparison circuit 45 is inverted by the inverter according to the FETs 36 and 37 so as to be output as a TOUT signal. Further, a signal of a terminal VTO indicates a high level value of the TOUT signal. Thus, the size of the temperature from the temperature sensor 35 is detected by a pulse width of the TOUT signal or by a duty signal.
- the FAL signal indicates that temperature detected by the temperature sensor 35 is considerably high, while the temperature detection voltage signal TAIN is extremely low. That is, the FAL signal is generated when the temperature detected by the temperature sensor 35 reaches a limit value.
- a DC power source is connected to a minus terminal of a comparator 49 .
- a voltage value of the DC power source is set to be a voltage corresponding to the limit value of the temperature.
- the temperature detection voltage signal TAIN is input to a plus terminal of the comparator 49 .
- a high level signal is output from the comparator 49 .
- the high level signal from the comparator 49 is input to the gate of the N type MOSFET 38 . Accordingly, the FET 38 is turned on and the FAL terminal has a low level.
- the output from the comparator 49 is reversed into a low level signal.
- the low level signal from the comparator 49 is input to the gate of the N type MOSFET 38 . Accordingly, the FET 38 is turned off and the FAL terminal has a high level. In this manner, it is informed that a temperature rise of the temperature detection target has reached a limit.
- the FAL signal is transmitted to an external control device or the like, and used as a control signal for stopping an operation of the temperature detection target, etc.
- the temperature of each phase IGBT element is increased according to an operational state of the motor, such as a motor locked state, and thus, there is a possibility of a breakdown.
- the 3-phase inverter drives an electric motor by using an insulated gate bipolar transistor (IGBT), which is a power switching element.
- IGBT insulated gate bipolar transistor
- the temperature of each IGBT element is monitored, and when a monitored temperature is higher than a predetermined temperature, in general, an output power of the inverter and a driving frequency of the IGBT element are reduced, thus restraining a temperature rise.
- the inverter circuit and the temperature detecting diode are mounted on the same substrate and configured as chips, and when the IGBT of the inverter circuit is operated, temperature detection is executed.
- the temperature detecting diode and the temperature detecting circuits are formed as separate chips, detection precision is degraded due to an influence of non-uniformity between the semiconductor elements.
- a usage limit temperature (junction temperature) is 150 degrees Celsius, so it is difficult to form the temperature detecting diode and the temperature detecting circuit as a single chip.
- the third embodiment includes the power element circuit configured by the power switching element, the temperature detecting diode 35 installed to measure the temperature of the power switching element, and the temperature detecting circuit 77 a for detecting the temperature by a voltage signal from the temperature detecting diode 35 . Further, the temperature detecting diode 35 and the temperature detecting circuit 77 a are formed on a single chip by the SOI structure. Thus, a junction temperature can be increased, relative precision between the semiconductor elements of the temperature detecting circuit 77 a and the temperature detecting diode 35 can be improved, and temperature detection of high precision can be executed.
- a temperature detecting apparatus capable of forming a temperature detecting circuit and an insulating element on the same substrate and reduce the size of an overall apparatus.
- a temperature detecting circuit capable of increasing the degree of precision of a duty cycle with an output pulse signal that can be employed for controlling a temperature rise, etc.
- a power semiconductor module capable of forming a temperature detecting diode and a temperature detecting circuit as one chip and increasing the degree of precision in detecting temperature.
- the temperature detecting apparatus and the temperature detecting circuit of the present disclosure can be applied to detect the temperature of a power device such as an inverter, a switching element or the like, having a high temperature state.
- the power semiconductor module of the present disclosure can be applied to any power device using high voltage, such as a hybrid vehicle, an electric vehicle, a home appliance, an industrial device, etc.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
A temperature detecting apparatus includes a temperature detecting circuit configured to output a first pulse signal according to a temperature detected by a temperature sensor, and an insulating transformer configured to transmit the first pulse signal to an integrated circuit which is operated by an operation voltage different from that of the temperature detecting circuit. The insulating transformer is installed between the temperature detecting circuit and the integrated circuit. The temperature detecting circuit and the insulating transformer are mounted on a common substrate.
Description
- This application is based upon and claims the benefit of priority from Japanese Patent Application Nos. 2011-81795, filed on Apr. 1, 2011; 2011-82673, filed on Apr. 4, 2011; 2011-82674, filed on Apr. 4, 2011; and 2012-52530, filed on Mar. 9, 2012, the entire contents of which are incorporated herein by reference.
- The present disclosure relates to a temperature detecting apparatus, a temperature detecting circuit, and a power semiconductor module, and more particularly, to a temperature detecting apparatus of a switching element constituting an inverter device, a temperature detecting circuit of a switching element constituting an inverter device, and a power semiconductor module including a temperature detection diode for detecting a temperature of a power switching element.
- An electric motor combined with an engine is used as a power source of a hybrid automobile, electric automobile, etc. When the electric motor is driven, an inverter is used to obtain a predetermined torque frequency. The inverter is assembled within an automobile and is required to be small with high power in order to secure space for passengers.
- An operation temperature of the inverter greatly changes according to the driving environment of the automobile, and in particular, in case of an automobile including an inverter mounted in an engine compartment, the inverter has a high temperature due to an influence of heat generated from the engine. In addition to the influence of ambient temperature, a switching element within the inverter may cause the temperature to rise due to an influence of a normal loss caused from a current flowing to the switching element itself and a switching loss caused from the turn-on and off of the switching element, and when the temperature exceeds a predetermined level, the switching element may be damaged.
- Techniques for suppressing the rise of temperature have been already known.
- For example, a photocoupler according to a related art includes a light emitting diode (LED) located at a transmitter and a photodiode placed at a receiver. The LED is disposed at a high voltage temperature detecting circuit and the photodiode is disposed at a low voltage substrate so that an operation voltage of the LED and that of the photodiode are different, the LED and photodiode cannot be manufactured on a common substrate, and it is difficult to form the LED and photodiode on an identical package.
- Further, in another related art, a circuit for generating an analog triangular wave is affected by a change in temperature in the outer environment, a change in a power source voltage, etc. Thus, since the circuit cannot generate a stable analog triangular waveform, a problem arises in that precision of a duty cycle of an output pulse signal output from a comparator cannot be improved.
- Further, in still another related art, an inverter circuit and a diode for detecting temperature are mounted on an identical substrate and made into a chip. When an IGBT (Insulated Gate Bipolar transistor) of the inverter circuit operates, temperature detection is performed. However, since the diode for detecting temperature and a temperature detecting circuit are formed as separate chips, detection precision is degraded due to an influence of non-uniformity of the semiconductor elements. Moreover, conventionally, in making chips with a silicon semiconductor, a usage limitation temperature (junction temperature) is 150 degrees Celsius, so it is difficult to form the diode for detecting temperature and the temperature detecting circuit as one chip.
- The present disclosure provides some embodiments of a temperature detecting apparatus capable of forming a temperature detecting circuit and an insulating element on the same substrate and reducing the size of an overall apparatus.
- Further, the present disclosure provides some embodiments of a temperature detecting circuit capable of increasing a degree of precision of a duty cycle with an output pulse signal configured to control a temperature rise, etc.
- In addition, the present disclosure provides some embodiments of a power semiconductor module capable of forming a diode configured to detect temperature and a temperature detecting circuit as one chip and increasing the degree of precision in detecting the temperature.
- According to one aspect of the present disclosure, there is provided a temperature detecting apparatus. The temperature detecting apparatus includes a temperature detecting circuit configured to output a first pulse signal according to a temperature detected by a temperature sensor; and an insulating transformer configured to transmit the first pulse signal to an integrated circuit which is operated at an operation voltage different from that of the temperature detecting circuit. The insulating transformer is installed between the temperature detecting circuit and the integrated circuit. In this configuration, the temperature detecting circuit and the insulating transformer are mounted on a common substrate.
- According to another aspect of the present disclosure, there is provided a temperature detecting circuit. The temperature detecting circuit includes an AD conversion circuit configured to convert a temperature detection signal from a temperature sensor into a digital temperature detection signal, a triangular wave generation circuit configured to output a digital signal equivalent to a triangular waveform as a time series, and a comparator configured to compare the digital temperature detection signal output from the AD conversion circuit and the digital signal output from the triangular wave generation circuit and output a duty signal.
- According to still another aspect of the present disclosure, there is provided a power semiconductor module. The power semiconductor module includes a power element circuit configured by a power switching element, a temperature detecting diode configured to measure a temperature of the power switching element, and a temperature detecting circuit configured to detect a temperature by a voltage signal from the temperature detecting diode. With this configuration, the temperature detecting diode and the temperature detecting circuit are formed on a single chip as an SOI structure.
-
FIG. 1 is a view illustrating a circuit configuration of an insulating signal transmission circuit used in a temperature detecting apparatus of a first embodiment. -
FIG. 2 is a view illustrating a circuit configuration of the temperature detecting apparatus of the first embodiment. -
FIG. 3 is a view illustrating an example of an insulating transformer stacked structure disposed in the temperature detecting apparatus of the first embodiment. -
FIGS. 4A to 4C are views illustrating a mounted state of circuit elements of the temperature detecting apparatus of the first embodiment. -
FIG. 5 is a view illustrating a configuration example of a device using the temperature detecting apparatus of the first embodiment. -
FIG. 6 is a view illustrating a circuit configuration example of a temperature detecting circuit of the first embodiment. -
FIG. 7 is a view illustrating a circuit configuration of a temperature detecting circuit of a second embodiment. -
FIG. 8 is a view illustrating a time chart in a digital comparison circuit of the circuit ofFIG. 7 . -
FIG. 9 is a view illustrating a block configuration of a driving type device using a power semiconductor module of a third embodiment. -
FIG. 10 is a view illustrating a circuit configuration of the power semiconductor module of the third embodiment. -
FIG. 11 is a view illustrating a circuit configuration example of a temperature detecting circuit of the third embodiment. - Embodiments of the present disclosure will now be described with reference to the accompanying drawings. In the following description, regarding the drawings, like or similar reference numerals are used for like or similar parts. However, the drawings are schematic and it should be noted that the relationships between thickness and planar dimensions, rates of thicknesses of respective layers or the like are different from real ones. Thus, specific thicknesses or dimensions should be determined in consideration of the following description. Further, parts in which mutual dimension relationships or rates are different are included in mutual drawings.
- Also, embodiments described hereinafter exemplify an apparatus or a method for embodying a technical concept of the present disclosure, and in embodiments of the present disclosure, materials, configurations, depositions and the like of constituent elements are not specified to those described hereinafter. The embodiments of the present disclosure may be variably modified in the scope of claims.
- Hereinafter, a first embodiment of the present disclosure will be described in detail with reference to
FIGS. 1 to 6 . - A temperature detecting apparatus of the first embodiment includes a temperature detecting circuit 76 (shown in
FIG. 5 ) configured to output a first pulse signal according to a temperature detected by a temperature sensor 35 (shown inFIG. 2 ), and insulatingtransformers 70 and 71 (shown inFIG. 2 ) configured to transmit the first pulse signal to an integrating circuit which operates at an operation voltage different from that of thetemperature detecting circuit 76. Theinsulating transformers 70 and 71 are installed between thetemperature detecting circuit 76 and the integrated circuit. Thetemperature detecting circuit 76 and the insulatingtransformers 70 and 71 are mounted on a common substrate. - In the
insulating transformers 70 and 71, primary coils 70 a and 71 a through which currents flow based on the first pulse signal from thetemperature detecting circuit 76, and secondary coils 70 b and 71 b which are configured to generate a current to be transmitted to the integrated circuit may be formed at upper and lower portions of theinsulating transformers 70 and 71 with a dielectric layer interposed therebetween. - Further, the
temperature detecting circuit 76 outputs a second pulse signal when the temperature detected by thetemperature sensor 35 reaches a predetermined limit value, and theinsulating transformers 70 and 71 are configured to transmit the second pulse signal from thetemperature detecting circuit 76 to the integrated circuit. -
Pulse generators insulating transformers 70 and 71. - A signal demodulation circuit, which is configured to demodulate a pulse signal having a waveform shaped by the
pulse generators insulating transformers 70 and 71, which are configured to generate a current to be transmitted to the integrated circuit. - An insulating
signal transmission circuit 1000 illustrated inFIG. 1 includes aprimary circuit 80 and asecondary circuit 81. - The insulating
signal transmission circuit 1000 executes the transmission of a signal from theprimary circuit 80 to thesecondary circuit 81 and conversely executes the transmission of a signal from thesecondary circuit 81 to theprimary circuit 80, as well as executing insulation between theprimary circuit 80 and thesecondary circuit 81. Thus, a circuit for controlling a signal transmission is included in the insulatingsignal transmission circuit 1000. Further, in an actual device, for example, theprimary circuit 80 may be used as a high voltage circuit and thesecondary circuit 81 may be used as a low voltage circuit. - The
primary circuit 80 and thesecondary circuit 81 are configured as symmetrical circuits, and here, theprimary circuit 80 may be used as a low voltage circuit and thesecondary circuit 81 may be used as a high voltage circuit. - The
primary circuit 80 includes a UVLO (Undervoltage-Lockout; low voltage malfunction preventing)circuit 1,inverters pulse generators flop 8, abuffer 9, and aresistor 10. Theinverter 2 and theresistor 10 may function as a buffer. The UVLO (low voltage malfunction preventing)circuit 1 monitors a power source voltage VCC1. When the power source voltage VCC1 is lower than a predetermined voltage, the UVLO (low voltage malfunction preventing)circuit 1 stops thepulse generators flop 8 and locks out an operation of stopping input/output signals. Further, when the power source voltage VCC1 is returned to have a normal voltage value, theUVLO circuit 1 is released to start a normal operation. - Insulting
transformers 31 and 32 are installed to link theprimary circuit 80 and thesecondary circuit 81. The insulatingtransformer 31 is composed of aninductor 31 a and an inductor 31 b insulated from theinductor 31 a. The insulating transformer 32 is composed of aninductor 32 a and aninductor 32 b insulated from theinductor 32 a. - The insulating
transformer 31, insulating theprimary circuit 80 and thesecondary circuit 81, transmits a signal from theprimary circuit 80 to thesecondary circuit 81. Similarly, the insulating transformer 32 transmits a signal from thesecondary circuit 81 to theprimary circuit 80, even while insulating theprimary circuit 80 and thesecondary circuit 81. - The
secondary circuit 81 includes a UVLO (low voltage malfunction preventing)circuit 11,inverters pulse generators inverters flop 18, abuffer 19, and aresistor 20. - The
inverter 12 and theresistor 20 also achieve the role of a buffer. The UVLO (low voltage malfunction preventing)circuit 11 monitors a power source voltage VCC2, and its operation is the same as that of theUVLO circuit 1, so a description thereof will be omitted. - When a square-wave pulse signal input to a terminal IN1 of the
primary circuit 80 is transmitted as is to thesecondary circuit 81 through the insulatingtransformer 31, a current corresponding to time of a pulse width of the pulse signal flows to the insulatingtransformer 31. Thus, if the pulse width becomes long, power consumption increases. In order to prevent the increase of power consumption, thepulse generators pulse generator 4 configured to narrow the high level pulse width and thepulse generator 5 configured to narrow the low level pulse width are installed. - Similarly, when a square-wave pulse signal input to a terminal IN2 of the
secondary circuit 81 is transmitted as is to theprimary circuit 80 through the insulating transformer 32, a current corresponding to time of a pulse width of the pulse signal flows to the insulating transformer 32. Thus, if the pulse width becomes longer, power consumption increases. In order to prevent the increase of power consumption, thepulse generators pulse generator 14 configured to narrow the high level pulse width and thepulse generator 15 configured to narrow the low level pulse width are installed. - Here, the
pulse generators primary circuit 80 is configured to be grounded at GND1, and thesecondary circuit 81 is configured to be grounded at the GND2. Theprimary circuit 80 and thesecondary circuit 81 are not configured to have a common ground line, so a ground potential of theprimary circuit 80 and that of thesecondary circuit 81 are different. - Next, an operation of the insulating
signal transmission circuit 1000 will be described. The pulse signal input to the terminal IN1 of theprimary circuit 80 is inverted in theinverter 2. The inverted signal is input to thepulse generator 5. Thepulse generator 5 generates a pulse having a width narrower than that of the original pulse signal by using the rise of the inverted signal as a trigger, and then outputs the pulse to theprimary inductor 31 a of the insulatingtransformer 31. Due to a change in current in response to the pulse supplied to theprimary inductor 31 a of the insulatingtransformer 31, a current is generated from the secondary inductor 31 b of the insulatingtransformer 31, and then supplied to the RS flip-flop 18 through theinverters - Whether a high level signal is to be input to a terminal S or to a terminal R of the RS flip-
flop 18 is determined by a direction of the current flowing across the secondary inductor 31 b. In this case, a high level signal is input to the terminal R of the RS flip-flop 18 and a low level signal is input to the terminal S, and an output Q has a low level signal. The low level signal from the output Q is output to OUT1 through thebuffer 19. - Since the pulse supplied to the
primary inductor 31 a of the insulatingtransformer 31 is based on the inverted signal of the pulse signal input to the terminal IN1, the pulse was generated in response to the drop of the pulse signal input to the terminal IN1. The insulatingtransformer 31 is operated based on a low level pulse of the pulse signal input to the terminal IN1 to generate a low level pulse in the RS flip-flop 18, and this causes the low level pulse portion of the pulse signal input to the terminal IN1 to be demodulated. - Meanwhile, the inverted signal which was inverted in the
inverter 2 is again inverted in theinverter 3 so as to be returned to its original state, that is, the state of the pulse signal which was input to the terminal IN1. By using the rise of the pulse signal as a trigger, thepulse generator 4 generates a pulse having a width narrower than that of the original signal and outputs the pulse to theprimary inductor 31 a of the insulatingtransformer 31. Due to a change in current according to the pulse supplied to theprimary inductor 31 a of the insulatingtransformer 31, a current is generated from the secondary inductor 31 b of the insulatingtransformer 31, and then supplied to the RS flip-flop 18 through theinverters - In this case, when a pulse is generated from the
pulse generator 4, the direction of the current flowing across theprimary inductor 31 a is opposite, so the direction of the current flowing across the secondary inductor 31 b is also opposite. Also, a high level signal is input to the terminal S of the RS flip-flop 18 and a low level signal is input to the terminal R, so that the output Q has a high level signal. The high level signal from the output Q is output to OUT1 through thebuffer 19. - In the above description, the insulating
transformer 31 is operated based on the high level pulse of the pulse signal input to the terminal IN1, and a high level pulse is generated from the RS flip-flop 18, which causes the high level pulse portion of the pulse signal input to the terminal IN1 to be demodulated. - In this manner, by using the
pulse generators flop 18, etc., the pulse signal input to theprimary circuit 80 can be demodulated by thesecondary circuit 81, while restraining power consumption for driving the insulatingtransformer 31. - Meanwhile, an operation of transmitting a pulse signal input to IN2 of the
secondary circuit 81 to OUT2 of theprimary circuit 80 through thepulse generators flop 8 and the like is the same as the operation of transmitting the pulse signal input to IN1 as described above, so a description thereof will be omitted. - Next, an example of a configuration of the temperature detecting circuit will be described with reference to
FIG. 6 . First, theexternal temperature sensor 35 is configured to include two diodes connected in series. Thetemperature sensor 35 is installed in the vicinity of a switching element such as a power transistor. In the present embodiment, in which thetemperature sensor 35 is configured as diodes, the diodes as a temperature sensor has the characteristic that a forward voltage is reduced when the temperature is increased under a condition of a constant current. The temperature of a switching element such as a power transistor may be measured by supplying a predetermined current to the diode and measuring a forward voltage. - As described above, since there is a need to make a constant current flow to the diodes of the
temperature sensor 35, a constant current source includes anamplifier 41 functioning as an operational amplifier, aFET 42, and acurrent mirror circuit 43. Thecurrent mirror circuit 43 includesP type MOSFETs FET 43 a and a gate of theFET 43 b are connected, and a drain of theFET 43 a and a drain of theFET 43 b are also connected. TheFET 43 b is also connected to a diode. - If a current flowing between the drain and a source of the
FET 43 b is determined, a current flowing between the drain and a source of theFET 43 a is also determined. Theamplifier 41 and theN type MOSFET 42 constitute a power amplifier. - A temperature detection voltage TAIN detected by the
temperature sensor 35 is input to anAD conversion circuit 44. TheAD conversion circuit 44 is configured as a so-called sequential comparison AD conversion circuit. The TAIN signal converted into a digital value in theAD conversion circuit 44 is input to adigital comparison circuit 45. - The
digital comparison circuit 45 is configured as a counter, a digital comparator, or the like. Anoscillation circuit 46 generates a clock pulse of a predetermined frequency, and the clocks from theoscillation circuit 46 are counted by a counter within thedigital comparison circuit 45 to generate a digital triangular signal. Thedigital comparison circuit 45 includes a digital comparator to compare the digital triangular signal and the TAIN signal which has been converted into a digital value. When the TAIN signal having a digital value is greater than the digital triangular signal, thedigital comparison circuit 45 outputs a high level signal. When the TAIN signal having a digital value is smaller than the digital triangular signal, thedigital comparison circuit 45 outputs a low level signal. - The output signal from the
digital comparison circuit 45 is then output to an inverter circuit. The inverter circuit includes anN type MOSFET 37 and aP type MOSFET 36. A source of theFET 36 and a drain of theFET 37 are connected, and a gate of theFET 36 and a gate of theFET 37 are also connected. An output signal from thedigital comparison circuit 45 is input to the gate of theFET 36 and the gate of theFET 37. - The output signal from the
digital comparison circuit 45 is inverted by the inverter according to theFETs temperature sensor 35 is detected by a pulse width of the TOUT signal or by a duty signal. - Here, a FAL signal also included in a connection terminal will be described. The FAL signal indicates that the temperature detected by the
temperature sensor 35 is considerably high, while the temperature detection voltage signal TAIN is extremely low. That is, the FAL signal is generated when the temperature detected by thetemperature sensor 35 reaches a limit value. - A DC power source is connected to a minus terminal of a
comparator 49. A voltage value of the DC power source is set to be a voltage corresponding to the limit value of the temperature. Meanwhile, the temperature detection voltage signal TAIN is input to a plus terminal of thecomparator 49. When the temperature detection voltage signal TAIN is higher than a voltage value of the DC power source, a high level signal is output from thecomparator 49. The high level signal from thecomparator 49 is input to the gate of anN type MOSFET 38. Accordingly, theFET 38 is turned on and the FAL terminal has a low level. - Meanwhile, when the detected temperature is decreased and so the temperature detection voltage signal TAIN becomes lower than the voltage value of the DC power source, the output from the
comparator 49 is reversed into a low level signal. The low level signal from thecomparator 49 is input to the gate of theN type MOSFET 38. Accordingly, theFET 38 is turned off and the FAL terminal has a high level. In this manner, it is detected that a temperature rise of the temperature detection target has reached a limit. The FAL signal is transmitted to an external control device or the like, and used as a control signal for stopping an operation of the temperature detection target, etc. - A
temperature detecting apparatus 90 ofFIG. 2 is configured by combining the insulatingsignal transmission circuit 1000 ofFIG. 1 and thetemperature detecting circuit 76 ofFIG. 5 . Circuit elements denoted by the same reference numerals as those of the temperature detecting circuit ofFIG. 6 perform the same operations as those of the circuits ofFIG. 6 , so a description of the temperature detecting circuit as a high voltage side circuit will be omitted. - In the temperature detecting apparatus in
FIG. 2 , unlike the insulatingsignal transmission circuit 1000 ofFIG. 1 , a bi-directional signal transmission is not performed between the primary circuit and the second circuit separated in an insulatingtransformer circuit 101, and a uni-directional signal is transmitted from thetemperature detecting circuit 100 to asignal demodulation circuit 102. - Thus, in order to restrain power consumption of the insulating
transformers 31 and 32 as described above with reference toFIG. 1 , a pulse generator which shapes an input pulse signal such that it has a narrow pulse width and outputs the pulse signal is installed only in thetemperature detecting circuit 100. Also, the signals output from thetemperature detecting circuit 100 are two types of signals, namely, a TOUT signal as a temperature detection signal and a FAL signal indicating that the temperature has reached a limit temperature. As for a signal transmission path of single type signal, as described above with reference toFIG. 1 , a pulse generator for narrowing a pulse width of a high level of the input pulse signal and a pulse generator for narrowing a pulse width of a low level of the input pulse signal are required. - For this reason, as shown in
FIG. 2 , afirst pulse generator 52 and asecond pulse generator 53 are installed so that they transmit the pulse signal corresponding to the detected temperature output from thedigital comparison circuit 45. Further, a third pulse generator 54 and afourth pulse generator 55 are installed for transmitting the FAL signal, which indicates that the temperature has reached a limit temperature output from thecomparator 49. - The configurations in
FIGS. 1 and 2 may correspond to each other as follows. Theinverter 2 inFIG. 1 corresponds to aninverter 47 inFIG. 2 , theinverter 3 corresponds to aninverter 48, thepulse generator 4 corresponds to thefirst pulse generator 52, thepulse generator 5 corresponds to thesecond pulse generator 53, the insulatingtransformer 31 corresponds to the insulatingtransformer 70, theinverter 16 corresponds to aninverter 56, theinverter 17 corresponds to aninverter 57, the RS flip-flop 18 corresponds to an RS flip-flop 60, and thebuffer 19 corresponds to abuffer 62. - Thus, since the operation of
FIG. 2 is the same as that ofFIG. 1 as described above, a description of the corresponding circuits ofFIG. 2 and a description of thesignal demodulation circuit 102 will be omitted. Further, aninverter 50, an inverter 51, the third pulse generator 54, thefourth pulse generator 55, the insulating transformer 71, aninverter 58, aninverter 59, an RS flip-flop 61, and abuffer 63, which constitute a signal system for transmitting and demodulating the FAL signal output from acomparator 49, are operated as described above, so a description thereof will also be omitted. - Here, the
temperature detecting circuit 100 and the insulatingtransformer circuit 101 are formed on the same substrate (the same frame). The insulatingtransformer circuit 101, to which a power source voltage is not required to be supplied, can obtain a current signal according to a magnetic mutual induction, so the insulatingtransformer circuit 101 may use a common substrate with thetemperature detecting circuit 100. - A state in which the temperature detecting apparatus of
FIG. 2 as a package is mounted on the substrate is shown inFIGS. 4A to 4C . -
FIG. 4A shows a photograph image of an interior viewed from a package surface.FIG. 4B is an enlarged photograph image ofFIG. 4A , in which the object positioned at the center is equivalent to the insulatingtransformer circuit 101. Further, the object disposed at the left of the object positioned at the center is equivalent to thetemperature detecting circuit 100, and the object disposed at the right of the object disposed at the center is equivalent to thesignal demodulation circuit 102, both of which are opposite each other. - A plastic mold is formed at a portion S between the insulating transformer and the signal demodulation circuit.
- The insulating transformer is configured as a chip and is formed on the same substrate on which the temperature detecting circuit is formed, and a copper island is formed on a rear surface thereof.
FIG. 4C shows a structure projected from the rear surface on which the copper island is formed. A bonding pad is formed on the copper island, and a copper coil is formed at an inner side of the copper island. - A stacked structure of the insulating transformer formed as a chip is shown in
FIG. 3 . - A silicon (Si) substrate is formed on the copper island, and a primary or secondary copper coil is formed on the silicon substrate.
- A dielectric layer made of SiO2 or the like is stacked to cover the copper coil. A secondary or primary copper coil is formed on the dielectric layer. In this manner, the primary coil and the secondary coil are electrically insulated by the dielectric layer.
FIG. 4C is a rear projected view of this. - Next, an example of a device to which the temperature detecting apparatus of the present embodiment is applied is shown in
FIG. 5 .FIG. 5 illustrates an example of adriving system apparatus 400 in which signals are transmitted in both directions between alow voltage substrate 410 and ahigh voltage substrate 411 of an automobile. Thelow voltage substrate 410 is mainly configured by anECU 72. ECU is called an electronic control unit or an engine control unit, which executes controlling of an engine, controlling of a driving system or a steering system, etc., by a computer. - The
high voltage substrate 411 includes apower semiconductor module 77 for driving amotor 412. An insulating gate bipolar transistor (IGBT) is illustrated as a power switching element of thepower semiconductor module 77. A gate of each IGBT is connected to agate driver 75. - A control signal output from the
ECU 72 is transmitted to thegate driver 75 through anisolator 73. A driving signal from thegate driver 75 is output according to the control signal from theECU 72. PWM (Pulse-width modulation) controlling is performed by the driving signal, and six IGBTs of thepower semiconductor module 77 are turned on or off at a desired timing to generate 3-phase AC power for driving themotor 412. - Meanwhile, the temperature is detected by a temperature sensor (not shown) installed in the vicinity of the IGBTs of the
power semiconductor module 77, and the detected signal is input to thetemperature detecting circuit 76 and converted into a pulse signal so as to be output and transmitted to theECU 72 through anisolator 74. In the related art, a photocoupler is used as an isolator, but in the present embodiment, an insulating transformer is used and atemperature detecting apparatus 90 formed by packaging atemperature detecting circuit 76 and theisolator 74 is used. Thetemperature detecting apparatus 90 ofFIG. 5 is thetemperature detecting apparatus 90 illustrated inFIG. 2 . - In a comparative example, in a vehicle system in which a vehicle body with a power switching element mounted therein is used for a reference potential, a low voltage substrate and a high voltage substrate are connected, the low voltage substrate and the high voltage substrate are insulated, and a power card is mounted on the high voltage substrate.
- The power card is packaged by mounting a power switching element and a diode as a temperature sensor thereon.
- With this configuration, the power switching element constitutes an inverter connected to a rotary electric machine used for running a vehicle. The rotary electric machine used for running a vehicle may be a rotary electric machine as a main machine for a vehicle, a generator for charging a high voltage battery for supplying power to the rotary electric machine as the main machine for a vehicle, etc. Meanwhile, the temperature sensor is disposed in the vicinity of the power switching element to detect the temperature.
- Further, a temperature detecting circuit configured to change a temperature detection signal into a PWM signal is mounted on the high voltage substrate. The low voltage substrate and the high voltage substrate are insulated by a photocoupler, and the photocoupler is an insulating unit for transmitting a signal from one of the substrates to the other, while insulating both substrates.
- In general, the photocoupler may be used as an insulating element for insulating the high voltage substrate and the low voltage substrate, so the photocoupler and the temperature detecting circuit are separately installed in a package, rather than being disposed on the same substrate.
- Further, the photocoupler may include a light emitting diode (LED) of a transmission side and a photodiode of a reception side. The LED is disposed at the temperature detecting circuit of a high voltage side and the photodiode is disposed at a low voltage substrate. In this manner, an operation voltage of the LED and that of the photodiode are different and cannot be manufactured on a common substrate, and it is difficult to form the LED and the photodiode in the same package.
- In the temperature detecting apparatus of the first embodiment, the insulating
transformers 70 and 71 are formed between thetemperature detecting circuit 100 for outputting the first pulse signal according to a temperature detected by thetemperature sensor 35 and an integrated circuit operating at an operation voltage different from that of thetemperature detecting circuit 100, and the first pulse signal is transmitted from thetemperature detecting circuit 100 to the integrated circuit, while maintaining an insulating state between the insulatingtransformers 70 and 71. - In this manner, since the insulating
transformers 70 and 71 are used, there is no need to supply different voltages to the insulatingtransformers 70 and 71, and a signal transmission according to a magnetic change is executed. Thus, thetemperature detecting circuit 100 and the insulatingtransformers 70 and 71 can be mounted on a common substrate, and the apparatus can be reduced in size. - Hereinafter, a second embodiment of the present disclosure will be described in detail with reference to
FIGS. 7 and 8 . - A temperature detecting circuit 201 of the second embodiment includes an
AD conversion circuit 107, a triangular wave generation circuit (afirst counter 162 and an oscillator circuit 163), and acomparator 161. TheAD conversion circuit 107 is configured to convert a temperature detection signal from atemperature sensor 121 into a digital value. The triangular wave generation circuit is configured to output a digital signal equivalent to a triangular wave as a time series. Thecomparator 161 is configured to compare the digital temperature detection signal output from theAD conversion circuit 107 and the digital signal output from the triangular wave generation circuit. A duty signal is output from thecomparator 161. - A period for executing a comparison process in the
comparator 161 includes four cycles, one cycle of which is defined as a section from a maximum value of the triangular wave to a next maximum value of the triangular wave or a section from a minimum value of the triangular wave to a next minimum value of the triangular wave. - Also, during one period in which the comparison process is executed, a duty ratio is determined by the first two cycles.
- Further, when a temperature detected by the
temperature sensor 121 reaches a limit value, a detection signal may be output from thecomparator 161. - The
temperature sensor 121 may include an element which operates with a constant current and has the voltage changing in response to a temperature. - Also, a constant current source, from which a current flows to the
temperature sensor 121, is configured to include acurrent mirror circuit 301 and change the current flowing to atemperature sensor 121 based on a value of a resistor connected to thecurrent mirror circuit 301. - In this configuration, for example, an
external temperature sensor 121 is configured to include two diodes connected in series. Thetemperature sensor 121 is installed in the vicinity of a switching element such as a power transistor. - In the present embodiment, in the case in which the
temperature sensor 121 is configured as diodes, the diodes as a temperature sensor has the characteristic that a forward voltage is reduced if the temperature is increased under a condition of a constant current. The temperature of a switching element such as a power transistor may be measured by supplying a predetermined current to the diode and measuring a forward voltage. - As described above, since there is a need to make a constant current flow to the diodes of the
temperature sensor 121, a constant current source includesvariable resistors amplifier 302 functioning as an operational amplifier, aFET 303, and thecurrent mirror circuit 301. - A reference
voltage generation circuit 105 functions to adjust a voltage required for a particular element within thetemperature detecting circuit 210 from a power source voltage VCC, and to supply the same. For example, the referencevoltage generation circuit 105 may be configured to generate an output voltage of 1.25V. Thecurrent mirror circuit 301 includesP type MOSFETs FET 112 and a gate of theFET 113 are connected, and a drain of theFET 112 and a drain of theFET 113 are also connected. TheFET 113 is also connected to a diode. - If a current flowing between the drain and a source of the
FET 113 is determined, a current flowing between the drain and a source of theFET 112 is also determined. Theamplifier 302 and theN type MOSFET 303 constitute a power amplifier. A current flowing to theFET 113 may be changed by adjusting thevariable resistors temperature sensor 121 may also be changed. - Also, a ratio between the current flowing between the drain and the source of the
FET 113 and the current flowing between the drain and the source of theFET 112 is determined by a ratio between the resistance of anexternal resistor 120 connected to theFET 303 and the internal resistance of thetemperature sensor 121. For example, in an aspect where the internal resistance of thetemperature sensor 121 is generally set to be about 1/20 of that of theresistor 120, thecurrent mirror circuit 301 functions as a constant current source for supplying a current of about 20 fold of the current flowing between the drain and the source of theFET 113 to thetemperature sensor 121. - Meanwhile, the
amplifier 104 functioning as an operational amplifier amplifies a voltage generated by the referencevoltage generation circuit 105 and supplies the same to theAD conversion circuit 107. Avariable resistor 141 is installed between a minus input terminal and an output terminal of theamplifier 104. Further, avariable resistor 142 installed between the minus input terminal of theamplifier 104 and GND is connected in series to thevariable resistor 141. An output voltage of theamplifier 104 is adjusted by thevariable resistors AD conversion circuit 107. For example, as illustrated in theFIG. 7 , it is set to be 3.3V. - Next, a comparison between a temperature detection voltage detected by the
temperature sensor 121 and a triangular wave will be described. TheAD conversion circuit 107 includes asequential comparison register 171, aDA converter 172, ananalog comparator 173, aregister 174, and aDA converter 175. TheAD conversion circuit 107 is a so-called sequential comparison AD conversion circuit. Thesequential comparison register 171 is a register which sequentially creates approximate values continuously. First, if there is a command for starting conversion, the sequential comparison register 171 sets an MSB as 1. This result is D/A converted by theDA converter 172 so as to be returned to an analog amount and then compared with a temperature detection voltage in thecomparator 173. In this case, if the voltage value of the temperature detection voltage is higher, the MSB remains as 1. - Next, the second bit of the
sequential comparison register 171 is also set to be 1. This result is D/A converted by theDA converter 172 so as to be returned to an analog amount and compared with the temperature detection voltage in thecomparator 173. If the temperature detection voltage is lower, the second bit of thesequential comparison register 171 is returned to 0. In this manner, the sequential bits are set and compared, starting from the MSB to an LSB, and if the bit is greater than the temperature detection voltage, the value is reset, and if it is smaller, the value remains as is, and this operation is continuously performed. If the operation continues up to the LSB, only a digital amount closest to the temperature detection voltage remains. The digital value is extracted and stored in theregister 174. - Next, the digital signal of the temperature detection voltage retained in the
register 174 is output to adigital comparison circuit 200. In thedigital comparison circuit 200, every signal is processed into a digital signal. - The
digital comparison circuit 200 includes thecomparator 161, thefirst counter 162, theoscillator circuit 163, and asecond counter 164. A digital value of theregister 174 and an output value of thefirst counter 162 are digitally compared in thecomparator 161, and if the digital value of theregister 174 is greater than the output value of thefirst counter 162, a high level signal is output. Also, if the digital value of theregister 174 is smaller than the output value of thefirst counter 162, a low level signal is output. - Since the
oscillator circuit 163 generates a clock signal of a predetermined period, the number of clocks is counted by thefirst counter 162. Thefirst counter 162 sequentially outputs the values obtained by counting the clocks from theoscillator circuit 163 to thecomparator 161. -
FIG. 8 is a time chart of thedigital comparison circuit 200, which mainly shows data compared in thecomparator 161 and a time chart of an output from thecomparator 161. - A clock from the
oscillator circuit 163 is also input to thesecond counter 164. Thesecond counter 164 is used to cancel an offset of thecomparator 173 and set to count up to a digital value equivalent to an offset amount of thecomparator 173. If theoscillator circuit 163 operates, thesecond counter 164 executes counting until such time that it reaches an amount equivalent to the offset of thecomparator 173, and outputs a corresponding value to theDA converter 175. The input digital value from thesecond counter 164 is converted into an analog amount by theDA converter 175 and input to an offset adjustment terminal of thecomparator 173. Accordingly, the offset of thecomparator 173 is canceled. - A digital value output from the
first counter 162 is increased stepwise (e.g., by 1 at a time) by the clock from theoscillator circuit 163, but it is equivalent to a sloped portion S1 of a triangular wave. Meanwhile, thefirst counter 162 is set to reset a numerical value now into 0 when the numerical value counted by thefirst counter 162 reaches a maximum value S3 of the triangular wave. Thus, in order to transmit immediately from the maximum value to 0, as shown in S3 of the triangular wave, the value is a straight line without a slope, and the S3 is in a state without a pulse width. In this manner, the triangular wave generation circuit is configured with thefirst counter 162 and theoscillator circuit 163 and outputs a digital signal equivalent to the analog triangular waveform as a time series. - A digital value of the temperature detection voltage value supplied from the
register 174 to thecomparator 161 is shown as the TAIN signal inFIG. 8 . As shown inFIG. 8 , the TAIN signal and a count value equivalent to the triangular wave output from thefirst counter 162 are compared. Here, the period for performing the comparison is determined to include 2 cycles, in which one cycle is composed of a DutyHi period and a DutyLo period, as shown in each period T0 to T4. - The DutyHi period corresponds to a period from a maximum value to a next maximum value or corresponding to a period from a minimum value to a next minimum value in the triangular wave. The DutyLo period is a next period of the DutyHi period, and corresponds to a period from a maximum value to a next maximum value or a period from a minimum value to a next minimum value in the triangular wave.
- In
FIG. 8 , the extent that the level of the TAIN signal is changed is illustrated, so it should be noted that the results obtained by comparing the TAIN signal and the triangular wave illustrated inFIG. 8 and the timing of TOUT equivalent to the output signal from thecomparator 161 are not consistent. - Specifically, a process of forming the TOUT signal will be described. For example, as shown in
FIG. 8 , one period starting from a maximum value of the triangular wave to a next maximum value or one period from a minimum value of the triangular wave to a next minimum value may be set to be 2.5 msec. - For example, during the period T1, when TAIN is in the 90% line N1 of the maximum value of the triangular wave, the triangular wave and N1 are compared in the
comparator 161, and a high level signal is output during a period in which N1 is higher than the triangular wave and a low level signal is output during a period in which N1 is lower than the triangular wave. Since a first DutyHi period is equivalent to 90% of the period of 2.5 msec, it can be calculated by 2.5×0.9=2.25 msec. This is a pulse period described as a 2.25 msecDuty 90% clamp. - The next DutyLo period has a pulse width of 2.75 msec as the sum of 2.5−2.25=0.25 msec and 2.5 msec. The period T1 includes two DutyHi periods and two DutyLo periods, but during the first DutyHi period and the first DutyLo period, the results obtained by comparing the triangular wave and Ni are output from the
comparator 161. During the next DutyHi period and the next DutyLo period, a comparison process is not executed and a pulse of a high level having a width of 2.5 msec and a pulse of a low level having a width of 2.5 msec in a period of the triangular wave are output. - The operation of the period T1 as described above is also executed during T2, T3, and T4. During the period T2, if TAIN is maintained in the state of 90% line N1 of the maximum value of the triangular wave, like the operation during the period T1, a high level pulse having a pulse width of 2.25 msec is output during the first DutyHi period, and a low level pulse having a pulse width of 2.75 msec is output during the first DutyLo period.
- During the next DutyHi period and the next DutyLo period, a comparison process is not executed and a pulse of a high level having a width of 2.5 msec and a pulse of a low level having a width of 2.5 msec in a period of the triangular wave are output. This state is illustrated in FIG. 8.
- During the period T3, it is described that TAIN is in the state of 10% line N2 of the maximum value of the triangular wave. The triangular wave and N2 are compared in the
comparator 161, and a high level signal is output during a period in which N2 is higher than the triangular wave and a low level signal is output during a period in which N2 is lower than the triangular wave. Since the first DutyHi period is equivalent to 10% of the period of 2.5 msec, it can be calculated by 2.5×0.1=0.25 msec. This is a pulse period described as a 0.25 msecDuty 10% clamp. - The next DutyLo period has a pulse width of 4.75 msec as the sum of 2.5−0.25=2.25 msec and 2.5 msec. Further, during the next DutyHi period and the next DutyLo period, a comparison process is not executed and a pulse of a high level having a width of 2.5 msec and a pulse of a low level having a width of 2.5 msec in a period of the triangular wave are output.
- During the period T4, since TAIN is maintained in the state of 10% line N2 of the maximum value of the triangular wave, like the operation during the period T3, a high level pulse having a pulse width of 0.25 msec is output during the first DutyHi period, and a low level pulse having a pulse width of 4.75 msec is output during the first DutyLo period. During the next DutyHi period and the next DutyLo period, a comparison process is not executed and a pulse of a high level having a width of 2.5 msec and a pulse of a low level having a width of 2.5 msec in a period of the triangular wave are output.
- In this manner, the results obtained by comparing the TAIN, the temperature detection voltage signal of the
temperature sensor 121, and the triangular wave by thecomparator 161 at every period Tn (n=0˜N) are sent to alevel shifter 108. - Here, the FAIL signal also present in a connection terminal will be described. For example, in
FIG. 8 , as shown by a relationship between the triangular wave and the TAIN signal during the period T4, it is an operation where the TAIN signal does not have a portion higher than that of the triangular waveform signal. This indicates that a temperature detected by thetemperature sensor 121 is considerably high and the temperature detection voltage signal TAIN is extremely low. - In this case, in order to inform that the temperature rise of the temperature detection target has reached a limit, the
comparator 161 outputs a low level signal. The low level signal from thecomparator 161 is input to a gate of anN type MOSFET 109. Accordingly, theFET 109 is turned off, and the FAIL terminal is changed to a high level state. The FAIL signal is transmitted to an external control device or the like, so as to be used as a control signal for stopping an operation of the temperature detection target, etc. - A DC voltage level of the output signal from the
comparator 161 is converted by thelevel shifter 108, so a high level signal is converted into a low level signal, and a low level signal is converted into a high level signal. An output from thelevel shifter 108 is input to a gate of anN type MOSFET 111 and a gate of aP type MOSFET 110. - Since it is configured such that a source of the
FET 110 and a drain of theFET 111 are connected and the gate of theFET 110 and the gate of theFET 111 are connected, an inverter is configured with theFET 110 and theFET 111. Thus, an output signal from thelevel shifter 108 is inverted by the inverter based on theFETs comparator 161 becomes the TOUT signal as is. In this manner, the temperature detected by thetemperature sensor 121 is converted into a pulse width of a pulse signal or a duty ratio and detected. Further, a VTO signal illustrated inFIG. 8 indicates a high level value of the TOUT signal. The TOUT signal is used, for example, to control torque, as a switching frequency, etc. - As described above, in order to obtain the duty signal to the comparator, the temperature detection voltage signal is converted into a digital value and the triangular wave as a reference for comparison is formed as a digital signal. Thus, since the comparison process is executed based on the digital values, the maximum value and the minimum value of the triangular wave, the slope of the triangular wave, etc., are not changed like in the case of an analog triangular wave, and a duty signal having extremely good precision can be obtained.
- As a comparative example, there is a technique of detecting a temperature of a switching element and cooling an inverter based on the obtained information or measuring a temperature of the switching element or the inverter to limit torque or a switching frequency, in order to avoid damage to the switching element.
- In this comparative example, in a PN junction semiconductor element such as a diode, a voltage is changed into a linear form over a temperature change. If a diode as a temperature sensor is installed in the vicinity of the switching element and a voltage is measured, temperature information having high precision and high response can be obtained. If the temperature information having high precision is obtained, torque can be output up to the proximity of a breakdown temperature of the switching element, and high density of the inverter can be expected.
- As described above, if the PN junction semiconductor element such as a diode is used as a temperature sensor, a comparator of the temperature detecting circuit compares a temperature detection voltage from a temperature sensor and a triangular wave generated by an analog circuit.
- The triangular wave and the temperature detection voltage are compared in the comparator, and, for example, the comparator is configured such that when the temperature detection voltage is higher than the triangular wave, an output from the comparator has a high level, and when the temperature detection voltage is lower than the triangular wave, an output from the comparator has a low level. In addition, since the temperature detection voltage is decreased as the temperature increases, the duty cycle of the pulse signal output from the comparator is changed, and a temperature is prevented from being increased by controlling torque or a switching frequency based on the pulse signal.
- For example, if power controlling is performed by using a power switch, a duty signal is generated by comparing an analog triangular waveform and a numeral value based on a command value.
- Here, however, the output pulse signal from the comparator is determined by comparing the triangular wave and the temperature detection voltage. Thus, in order to enhance precision of the duty cycle of the output pulse signal output from the comparator, a maximum value and a minimum value of the analog triangular wave, and the slope of the triangular wave are required to be generated with good precision.
- However, the circuit for generating the analog triangular wave is affected by a temperature change of the outer environment, a change in a power source voltage, etc., and cannot generate a stable analog triangular waveform, so it is difficult to enhance the precision of the duty cycle of the output pulse signal output from the comparator.
- The temperature detecting circuit of the second embodiment includes the
AD conversion circuit 107, the triangular wave generation circuit (thefirst counter 162, the oscillator circuit 163), and thecomparator 161. TheAD conversion circuit 107 is configured to convert a temperature detection signal from thetemperature sensor 121 into a digital value. The triangular wave generation circuit is configured to output a digital signal equivalent to a triangular waveform as a time series. Thecomparator 161 is configured to compare the digital temperature detection signal output from theAD conversion circuit 107 and the digital signal output from the triangular wave generation circuit. Further, a duty signal is output from thecomparator 161. Thus, since the triangular waveform, as well as the temperature detection signal, is provided as a digital signal, and there is no change in a maximum value and a minimum value of the triangular waveform, the slope of the triangular waveform, etc., a duty output signal having good precision can be obtained. - Hereinafter, a third embodiment of the present disclosure will be described in detail with reference to
FIGS. 9 to 11 . - A
power semiconductor module 77 of the third embodiment includes a power element circuit configured by a power switching element (IGBT), a temperature detecting diode (i.e., a temperature sensor) 35 for measuring the temperature of the power switching element, and atemperature detecting circuit 77 a for detecting a temperature by a voltage signal from thetemperature detecting diode 35. In addition, thetemperature detecting diode 35 and thetemperature detecting circuit 77 a are formed on a single chip by an SOI structure. - Further, the chip and the power element circuit are formed on a common frame and installed in a single package.
-
FIG. 9 illustrates an example of adriving system apparatus 400 in which signals are transmitted in both directions between alow voltage substrate 410 and ahigh voltage substrate 411 of an automobile. Thelow voltage substrate 410 is mainly configured by anECU 72. ECU is called an electronic control unit or an engine control unit, which executes controlling of an engine, controlling of a driving system or a steering system, etc., by a computer. - The
high voltage substrate 411 includes thepower semiconductor module 77 having aninverter circuit 77 b for driving amotor 412. Thepower semiconductor module 77 is formed as a single package, in which thetemperature detecting circuit 77 a and theinverter circuit 77 b are formed. An insulating gate bipolar transistor (IGBT) is illustrated as a power switching element of theinverter circuit 77 b. A gate of each IGBT is connected to agate driver 75, and a flywheel diode is connected in parallel to each IGBT. A DC voltage is supplied from aDC power source 78 to each IGBT. - A control signal output from the
ECU 72 is transmitted to agate driver 75 through anisolator 73. A driving signal from thegate driver 75 is output according to the control signal from theECU 72. PWM controlling is performed by the driving signal, and six IGBTs of theinverter circuit 77 b are turned on or off at a desired timing to generate 3-phase AC power for driving themotor 412. - Meanwhile, the temperature is detected by a temperature sensor (not shown) based on a diode installed in the vicinity of the IGBTs of the
inverter circuit 77 b, and the detected signal is input to thetemperature detecting circuit 77 a and converted into a pulse signal so as to be output and transmitted to theECU 72 through anisolator 74. As theisolators - In this configuration, the
temperature detecting circuit 77 a and thetemperature sensor 35 based on a diode are made into one chip by using an HT-SOI (Silicon on Insulator) structure in manufacturing a semiconductor stacked structure. The SOI structure is a technique of forming a thin insulating oxide film on a silicon substrate and further forming an electric circuit such as a transistor, a sensor, etc. thereon. This technique has a fast speed and high power characteristics with low power consumption in comparison to a general bulk CMOS technique. A junction temperature in the SOI structure is 225 degrees Celsius, and by executing one chip based on the SOI structure, stable temperature detection with high precision can be executed. - Further, the
temperature sensor 35 and thetemperature detecting circuit 77 a configured as one chip based on the SOI structure are installed in the same package with theinverter circuit 77 b. That is, the chip of theinverter circuit 77 b and the chip of thetemperature detecting circuit 77 a including a temperature sensor are disposed on the same frame. Thus, the precision of temperature detection can be further improved. -
FIG. 10 illustrates a position of the disposition of thetemperature sensor 35 configured as a diode in thepower semiconductor module 77 ofFIG. 9 . Thetemperature sensor 35 is installed in the vicinity of the IGBT. Further, thetemperature sensor 35 is configured to include two diodes connected in series. The diodes as the temperature sensor have the characteristic that a forward voltage is reduced when the temperature is increased under the condition of a constant current. The temperature of a switching element such as a power transistor may be measured by supplying a predetermined current to the diode and measuring a forward voltage. - Further, in
FIG. 10 , it is illustrated that thetemperature detecting circuit 77 a and thetemperature sensor 35 are separated, which makes understanding the disposition position of the temperature detecting diode easier, and as described above, the temperature detecting diode and thetemperature detecting circuit 77 a are made into one chip by the SOI structure. Meanwhile, acontrol circuit 79 is installed as a circuit which outputs a control signal and includes a function of thegate driver 75 ofFIG. 9 . - Next, a circuit configuration example of the
temperature detecting circuit 77 a illustrated inFIGS. 9 and 10 is shown inFIG. 11 . As described above, since there is a need to make a constant current flow to the diodes of thetemperature sensor 35, a constant current source includes anamplifier 41 functioning as an operational amplifier, aFET 42, and acurrent mirror circuit 43. Thecurrent mirror circuit 43 includesP type MOSFETs FET 43 a and a gate of theFET 43 b are connected, and a drain of theFET 43 a and a drain of theFET 43 b are also connected. TheFET 43 b is also connected to a diode. - If a current flowing between the drain and a source of the
FET 43 b is determined, a current flowing between the drain and a source of theFET 43 a is also determined. Theamplifier 41 and theN type MOSFET 42 constitute a power amplifier. - A temperature detection voltage TAIN detected by the
temperature sensor 35 is input to anAD conversion circuit 44. TheAD conversion circuit 44 is configured as a so-called sequential comparison AD conversion circuit. The TAIN signal converted into a digital value in theAD conversion circuit 44 is input to adigital comparison circuit 45. - The
digital comparison circuit 45 is configured as a counter, a digital comparator, or the like. Anoscillator circuit 46 generates a clock pulse of a predetermined frequency, and the clocks from theoscillator circuit 46 are counted by a counter within thedigital comparison circuit 45 to generate a digital triangular signal. Thedigital comparison circuit 45 includes a digital comparator to compare the digital triangular signal and the TAIN signal which has been converted into a digital value. When the TAIN signal having a digital value is greater than the digital triangular signal, thedigital comparison circuit 45 outputs a high level signal. When the TAIN signal having a digital value is smaller than the digital triangular signal, thedigital comparison circuit 45 outputs a low level signal. - The output signal from the
digital comparison circuit 45 is then output to an inverter circuit. The inverter circuit includes anN type MOSFET 37 and aP type MOSFET 36. A source of theFET 36 and a drain of theFET 37 are connected, and a gate of theFET 36 and a gate of theFET 37 are also connected. An output signal from thedigital comparison circuit 45 is input to the gate of theFET 36 and the gate of theFET 37. - The output signal from the
digital comparison circuit 45 is inverted by the inverter according to theFETs temperature sensor 35 is detected by a pulse width of the TOUT signal or by a duty signal. - Here, a FAL signal also included in a connection terminal will be described. The FAL signal indicates that temperature detected by the
temperature sensor 35 is considerably high, while the temperature detection voltage signal TAIN is extremely low. That is, the FAL signal is generated when the temperature detected by thetemperature sensor 35 reaches a limit value. - A DC power source is connected to a minus terminal of a
comparator 49. A voltage value of the DC power source is set to be a voltage corresponding to the limit value of the temperature. Meanwhile, the temperature detection voltage signal TAIN is input to a plus terminal of thecomparator 49. When the temperature detection voltage signal TAIN is higher than a voltage value of the DC power source, a high level signal is output from thecomparator 49. The high level signal from thecomparator 49 is input to the gate of theN type MOSFET 38. Accordingly, theFET 38 is turned on and the FAL terminal has a low level. - Meanwhile, when the detected temperature is decreased and so the temperature detection voltage signal TAIN becomes lower than the voltage value of the DC power source, the output from the
comparator 49 is reversed into a low level signal. The low level signal from thecomparator 49 is input to the gate of theN type MOSFET 38. Accordingly, theFET 38 is turned off and the FAL terminal has a high level. In this manner, it is informed that a temperature rise of the temperature detection target has reached a limit. The FAL signal is transmitted to an external control device or the like, and used as a control signal for stopping an operation of the temperature detection target, etc. - As a comparative example, in a system such as a 3-phase inverter, the temperature of each phase IGBT element is increased according to an operational state of the motor, such as a motor locked state, and thus, there is a possibility of a breakdown. In this configuration, the 3-phase inverter drives an electric motor by using an insulated gate bipolar transistor (IGBT), which is a power switching element. For this reason, the temperature of each IGBT element is monitored, and when a monitored temperature is higher than a predetermined temperature, in general, an output power of the inverter and a driving frequency of the IGBT element are reduced, thus restraining a temperature rise.
- Further, in the comparative example, the inverter circuit and the temperature detecting diode are mounted on the same substrate and configured as chips, and when the IGBT of the inverter circuit is operated, temperature detection is executed. However, in this configuration, since the temperature detecting diode and the temperature detecting circuits are formed as separate chips, detection precision is degraded due to an influence of non-uniformity between the semiconductor elements.
- In addition, in making chips with the related art silicon semiconductor, a usage limit temperature (junction temperature) is 150 degrees Celsius, so it is difficult to form the temperature detecting diode and the temperature detecting circuit as a single chip.
- The third embodiment includes the power element circuit configured by the power switching element, the
temperature detecting diode 35 installed to measure the temperature of the power switching element, and thetemperature detecting circuit 77 a for detecting the temperature by a voltage signal from thetemperature detecting diode 35. Further, thetemperature detecting diode 35 and thetemperature detecting circuit 77 a are formed on a single chip by the SOI structure. Thus, a junction temperature can be increased, relative precision between the semiconductor elements of thetemperature detecting circuit 77 a and thetemperature detecting diode 35 can be improved, and temperature detection of high precision can be executed. - According to the present disclosure, in some embodiments, it is possible to provide a temperature detecting apparatus capable of forming a temperature detecting circuit and an insulating element on the same substrate and reduce the size of an overall apparatus.
- Further, according to the present disclosure, in some embodiments, it is possible to provide a temperature detecting circuit capable of increasing the degree of precision of a duty cycle with an output pulse signal that can be employed for controlling a temperature rise, etc.
- Additionally, according to the present disclosure, in some embodiments, it is possible to provide a power semiconductor module capable of forming a temperature detecting diode and a temperature detecting circuit as one chip and increasing the degree of precision in detecting temperature.
- According to the present disclosure, in some embodiments, the temperature detecting apparatus and the temperature detecting circuit of the present disclosure can be applied to detect the temperature of a power device such as an inverter, a switching element or the like, having a high temperature state.
- Further, according to the present disclosure, in some embodiments, the power semiconductor module of the present disclosure can be applied to any power device using high voltage, such as a hybrid vehicle, an electric vehicle, a home appliance, an industrial device, etc.
- While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the disclosures. Indeed, the novel methods and apparatuses described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the disclosures. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the disclosures.
Claims (13)
1. A temperature detecting apparatus, comprising:
a temperature detecting circuit configured to output a first pulse signal according to a temperature detected by a temperature sensor; and
an insulating transformer configured to transmit the first pulse signal to an integrated circuit which is operated by an operation voltage different from that of the temperature detecting circuit, the insulating transformer being installed between the temperature detecting circuit and the integrated circuit,
wherein the temperature detecting circuit and the insulating transformer are mounted on a common substrate.
2. The temperature detecting apparatus of claim 1 , wherein the insulating transformer comprises a primary coil through which a current flows based on the first pulse signal from the temperature detecting circuit and a secondary coil configured to generate a current to be transmitted to the integrated circuit, the primary coil and the secondary coil being formed at upper and lower portions of the insulating transformer with a dielectric layer interposed therebetween.
3. The temperature detecting apparatus of claim 1 , wherein when the temperature detected by the temperature sensor reaches a predetermined limit value, the temperature detecting circuit outputs a second pulse signal and the insulating transformer transmits the second pulse signal from the temperature detecting circuit to the integrated circuit.
4. The temperature detecting apparatus of claim 1 , wherein a pulse generator is configured to shape pulse widths of a high level and a low level of the first pulse signal or the second pulse signal, and generate and output a pulse having a width smaller than those of the pulse signals, the pulse generator being installed in the vicinity of the primary coil of the insulating transformer.
5. The temperature detecting apparatus of claim 4 , wherein a signal demodulation circuit is configured behind the secondary coil, the signal demodulation circuit configured to demodulate a pulse signal, the pulse width of which is shaped by the pulse generator into a signal having the original pulse width, the secondary coil of the insulating transformer configured to generate a current to be transmitted to the integrated circuit.
6. A temperature detecting circuit, comprising:
an AD conversion circuit configured to convert a temperature detection signal from a temperature sensor into a digital temperature detection signal;
a triangular wave generation circuit configured to output a digital signal equivalent to a triangular waveform as a time series; and
a comparator configured to compare the digital temperature detection signal output from the AD conversion circuit and the digital signal output from the triangular wave generation circuit and output a duty signal.
7. The temperature detecting circuit of claim 6 , wherein a period for executing the comparison process in the comparator is composed of four cycles, in which one cycle is defined as a section from a maximum value of the triangular waveform to a next maximum value thereof or a section from a minimum value of the triangular wave to a next minimum value thereof.
8. The temperature detecting circuit of claim 7 , wherein a duty ratio is determined by the first two cycles during one period for executing the comparison process.
9. The temperature detecting circuit of claim 6 , wherein when a temperature detected by the temperature sensor reaches a limit value, a detection signal is output from the comparator.
10. The temperature detecting circuit of claim 6 , wherein the temperature sensor comprises an element configured to operate with a constant current, the voltage of the element changing in response to a temperature.
11. The temperature detecting circuit of claim 10 , wherein a constant current source is configured to flow a current to the temperature sensor and include a current mirror circuit and change the current flowing to the temperature sensor based on a value of a resistor connected to the current mirror circuit.
12. A power semiconductor module, comprising:
a power element circuit configured by a power switching element;
a temperature detecting diode configure to measure a temperature of the power switching element; and
a temperature detecting circuit configured to detect a temperature by a voltage signal from the temperature detecting diode,
wherein the temperature detecting diode and the temperature detecting circuit are formed on a single chip as an SOI structure.
13. The power semiconductor module of claim 12 , wherein the chip and the power element circuit are formed on a common frame and installed in a single package.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/585,355 US9523613B2 (en) | 2011-04-01 | 2014-12-30 | Temperature detecting circuit and temperature detecting apparatus using the same |
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011-81795 | 2011-04-01 | ||
JP2011081795 | 2011-04-01 | ||
JP2011082673 | 2011-04-04 | ||
JP2011082674 | 2011-04-04 | ||
JP2011-82674 | 2011-04-04 | ||
JP2011-82673 | 2011-04-04 | ||
JP2012052530A JP6104512B2 (en) | 2011-04-01 | 2012-03-09 | Temperature detection device |
JP2012-52530 | 2012-03-09 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/585,355 Division US9523613B2 (en) | 2011-04-01 | 2014-12-30 | Temperature detecting circuit and temperature detecting apparatus using the same |
Publications (1)
Publication Number | Publication Date |
---|---|
US20120250385A1 true US20120250385A1 (en) | 2012-10-04 |
Family
ID=46927077
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/436,042 Abandoned US20120250385A1 (en) | 2011-04-01 | 2012-03-30 | Temperature detecting apparatus, temperature detecting circuit and power semiconductor module |
US14/585,355 Active US9523613B2 (en) | 2011-04-01 | 2014-12-30 | Temperature detecting circuit and temperature detecting apparatus using the same |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/585,355 Active US9523613B2 (en) | 2011-04-01 | 2014-12-30 | Temperature detecting circuit and temperature detecting apparatus using the same |
Country Status (2)
Country | Link |
---|---|
US (2) | US20120250385A1 (en) |
JP (1) | JP6104512B2 (en) |
Cited By (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110122917A1 (en) * | 2009-11-20 | 2011-05-26 | Denso Corporation | Physical quantity detecting apparatus |
US20110279975A1 (en) * | 2010-03-25 | 2011-11-17 | Rohm Co., Ltd. | Motor driving circuit |
US20120218027A1 (en) * | 2011-02-28 | 2012-08-30 | General Electric Company, A New York Corporation | System and Methods for Improving Power Handling of an Electronic Device |
US20140035658A1 (en) * | 2012-08-03 | 2014-02-06 | Mitsubishi Electric Corporation | Power semiconductor device module |
US8901989B2 (en) * | 2012-07-26 | 2014-12-02 | Qualcomm Incorporated | Adaptive gate drive circuit with temperature compensation |
US8985850B1 (en) * | 2009-10-30 | 2015-03-24 | Cypress Semiconductor Corporation | Adaptive gate driver strength control |
US20150103450A1 (en) * | 2013-10-14 | 2015-04-16 | Unico, Inc. | Thermal Protection For Electrical Device |
US20160013742A1 (en) * | 2014-07-09 | 2016-01-14 | Rohm Co., Ltd. | Motor driving circuit, cooling device and electronic apparatus including the same |
US20160336844A1 (en) * | 2014-01-23 | 2016-11-17 | Denso Corporation | Insulation communication device |
CN106230409A (en) * | 2016-08-25 | 2016-12-14 | 中车株洲电力机车研究所有限公司 | A kind of IGBT parallel drivers of band NTC acquisition function |
CN106533322A (en) * | 2015-09-14 | 2017-03-22 | 英飞凌科技股份有限公司 | Calculation of MOSFET switch temperature in motor control |
CN107005235A (en) * | 2014-12-12 | 2017-08-01 | 罗伯特·博世有限公司 | Method and apparatus for run switch element |
EP3273599A1 (en) * | 2016-07-19 | 2018-01-24 | Rohm Co., Ltd. | Signal transmission circuit and vehicle |
CN108183656A (en) * | 2016-12-08 | 2018-06-19 | 福特全球技术公司 | The self-balancing parallel power device of gate drivers with temperature-compensating |
US20180284181A1 (en) * | 2015-11-05 | 2018-10-04 | Crrc Zhuzhou Institute Co., Ltd. | On-line health management device and method for insulated gate bipolar transistor |
CN109632118A (en) * | 2018-12-20 | 2019-04-16 | 中国电子科技集团公司第四十八研究所 | A kind of CMOS temperature sensing circuit and MEMS temperature sensor system |
CN109682491A (en) * | 2018-12-11 | 2019-04-26 | 深圳市法拉第电驱动有限公司 | A kind of temperature sampling circuit, wiring board, electric machine controller and electric car |
US20190250046A1 (en) * | 2018-02-14 | 2019-08-15 | Infineon Technologies Ag | Systems and methods for measuring transistor junction temperature while operating |
DE102018206053A1 (en) * | 2018-04-20 | 2019-10-24 | Audi Ag | Circuit arrangement and motor vehicle |
CN110944431A (en) * | 2019-12-16 | 2020-03-31 | 华帝股份有限公司 | LED lamp failure detection circuit and electrical and temperature failure detection method |
CN111043067A (en) * | 2019-12-31 | 2020-04-21 | 宁波奥克斯电气股份有限公司 | Fan control method, fan, smart home system and storage medium |
CN111609943A (en) * | 2020-05-11 | 2020-09-01 | Oppo广东移动通信有限公司 | Temperature detection circuit |
US11022499B2 (en) * | 2017-04-13 | 2021-06-01 | Fuji Electric Co., Ltd. | Temperature detection device and power conversion device |
US20210384819A1 (en) * | 2020-06-05 | 2021-12-09 | Fuji Electric Co., Ltd. | Power converter |
US20230146017A1 (en) * | 2020-03-30 | 2023-05-11 | Rohm Co., Ltd. | Comparator circuit |
US20230208281A1 (en) * | 2021-12-27 | 2023-06-29 | GM Global Technology Operations LLC | Method for detecting early degradation within the inverter module |
CN117589323A (en) * | 2024-01-19 | 2024-02-23 | 常州通宝光电股份有限公司 | High-voltage isolation area temperature acquisition circuit |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101655533B1 (en) * | 2014-09-22 | 2016-09-07 | 현대자동차주식회사 | Temperature sensing system for switching device |
US9450398B2 (en) * | 2014-12-30 | 2016-09-20 | Diodes Incorporated | Protection circuit for electronic system |
DE112015005998T5 (en) * | 2015-01-20 | 2017-10-05 | Mitsubishi Electric Corporation | SEMICONDUCTOR DEVICE |
JP6522402B2 (en) | 2015-04-16 | 2019-05-29 | ローム株式会社 | Semiconductor device |
CN105043592A (en) * | 2015-08-05 | 2015-11-11 | 国网山东省电力公司东营供电公司 | Transformer oil temperature monitoring system and method based on wireless local area network |
JP6686352B2 (en) * | 2015-09-30 | 2020-04-22 | サンケン電気株式会社 | Temperature detection circuit |
CN105371970A (en) * | 2015-12-15 | 2016-03-02 | 国家电网公司 | Substation wireless temperature measuring alarm system |
KR102388147B1 (en) * | 2017-05-08 | 2022-04-19 | 현대자동차주식회사 | IGBT temperature sensor correction device and temperature sensing correction method using the same |
EP3690412B1 (en) * | 2019-02-04 | 2022-06-15 | EM Microelectronic-Marin SA | Flicker noise reduction in a temperature sensor arrangement |
US11233503B2 (en) | 2019-03-28 | 2022-01-25 | University Of Utah Research Foundation | Temperature sensors and methods of use |
JP6718540B2 (en) * | 2019-04-24 | 2020-07-08 | ローム株式会社 | Semiconductor device |
JP7035117B2 (en) * | 2020-06-12 | 2022-03-14 | ローム株式会社 | Semiconductor device |
WO2022070944A1 (en) * | 2020-09-29 | 2022-04-07 | ローム株式会社 | Signal transmission device, electronic device and vehicle |
WO2023095659A1 (en) * | 2021-11-29 | 2023-06-01 | ローム株式会社 | Semiconductor device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020017919A1 (en) * | 2000-02-14 | 2002-02-14 | Haigh Geoffrey T. | Isolator for transmitting logic signals across an isolation barrier |
US20060238154A1 (en) * | 2004-11-10 | 2006-10-26 | Andigilog, Inc. | Controller arrangement with automatic power down |
US7262570B2 (en) * | 2005-03-15 | 2007-08-28 | Andigilog, Inc. | Motor controller with enhanced noise immunity unbuffered hall sensors |
US7622887B2 (en) * | 2006-03-16 | 2009-11-24 | Fuji Electric Device Technology Co., Ltd. | Power electronics equipments |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05137255A (en) | 1991-11-11 | 1993-06-01 | Hitachi Shonan Denshi Co Ltd | Power controller |
JP3322048B2 (en) * | 1995-01-24 | 2002-09-09 | 株式会社デンソー | Semiconductor integrated circuit device |
JP3110653B2 (en) * | 1995-06-15 | 2000-11-20 | シャープ株式会社 | Signal transmission device |
JPH10337084A (en) * | 1997-05-30 | 1998-12-18 | Aisin Seiki Co Ltd | Overheat protector for switching module |
JP2004085384A (en) * | 2002-08-27 | 2004-03-18 | Seiko Epson Corp | Temperature sensor circuit, semiconductor integrated circuit, and its regulating method |
JP2005228779A (en) * | 2004-02-10 | 2005-08-25 | Oki Electric Ind Co Ltd | Method of manufacturing semiconductor device |
JP2007165343A (en) * | 2005-12-09 | 2007-06-28 | Nec Electronics Corp | Thin film transistor, and method of manufacturing same |
JP5029900B2 (en) * | 2007-11-20 | 2012-09-19 | アイシン・エィ・ダブリュ株式会社 | Motor control device |
JP2009147564A (en) * | 2007-12-12 | 2009-07-02 | Toyota Industries Corp | Signal transfer circuit |
JP5303167B2 (en) * | 2008-03-25 | 2013-10-02 | ローム株式会社 | Switch control device and motor drive device using the same |
JP2010199490A (en) | 2009-02-27 | 2010-09-09 | Fuji Electric Systems Co Ltd | Temperature measurement device of power semiconductor device, and power semiconductor module using the same |
JP5375952B2 (en) * | 2009-03-31 | 2013-12-25 | 日本電気株式会社 | Semiconductor device |
JP2011007580A (en) * | 2009-06-25 | 2011-01-13 | Denso Corp | Temperature detecting device of power switching element |
JP5240524B2 (en) * | 2009-07-28 | 2013-07-17 | 株式会社デンソー | Switching element temperature detection device |
CN102208892B (en) * | 2010-03-25 | 2016-02-17 | 罗姆股份有限公司 | Motor-drive circuit, cooling device, electronic equipment, timely checking circuit |
-
2012
- 2012-03-09 JP JP2012052530A patent/JP6104512B2/en active Active
- 2012-03-30 US US13/436,042 patent/US20120250385A1/en not_active Abandoned
-
2014
- 2014-12-30 US US14/585,355 patent/US9523613B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020017919A1 (en) * | 2000-02-14 | 2002-02-14 | Haigh Geoffrey T. | Isolator for transmitting logic signals across an isolation barrier |
US20060238154A1 (en) * | 2004-11-10 | 2006-10-26 | Andigilog, Inc. | Controller arrangement with automatic power down |
US7262570B2 (en) * | 2005-03-15 | 2007-08-28 | Andigilog, Inc. | Motor controller with enhanced noise immunity unbuffered hall sensors |
US7622887B2 (en) * | 2006-03-16 | 2009-11-24 | Fuji Electric Device Technology Co., Ltd. | Power electronics equipments |
Cited By (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8985850B1 (en) * | 2009-10-30 | 2015-03-24 | Cypress Semiconductor Corporation | Adaptive gate driver strength control |
US8371750B2 (en) * | 2009-11-20 | 2013-02-12 | Denso Corporation | Physical quantity detecting apparatus |
US20110122917A1 (en) * | 2009-11-20 | 2011-05-26 | Denso Corporation | Physical quantity detecting apparatus |
US9374029B2 (en) | 2010-03-25 | 2016-06-21 | Rohm Co., Ltd. | Motor driving circuit |
US20110279975A1 (en) * | 2010-03-25 | 2011-11-17 | Rohm Co., Ltd. | Motor driving circuit |
US8704470B2 (en) * | 2010-03-25 | 2014-04-22 | Rohm Co., Ltd. | Motor driving circuit |
US10164557B2 (en) | 2010-03-25 | 2018-12-25 | Rohm Co., Ltd. | Motor driving circuit |
US20120218027A1 (en) * | 2011-02-28 | 2012-08-30 | General Electric Company, A New York Corporation | System and Methods for Improving Power Handling of an Electronic Device |
US8674651B2 (en) * | 2011-02-28 | 2014-03-18 | General Electric Company | System and methods for improving power handling of an electronic device |
US8901989B2 (en) * | 2012-07-26 | 2014-12-02 | Qualcomm Incorporated | Adaptive gate drive circuit with temperature compensation |
US9116532B2 (en) * | 2012-08-03 | 2015-08-25 | Mitsubishi Electric Corporation | Power semiconductor device module |
US20140035658A1 (en) * | 2012-08-03 | 2014-02-06 | Mitsubishi Electric Corporation | Power semiconductor device module |
US20150103450A1 (en) * | 2013-10-14 | 2015-04-16 | Unico, Inc. | Thermal Protection For Electrical Device |
US20160336844A1 (en) * | 2014-01-23 | 2016-11-17 | Denso Corporation | Insulation communication device |
US9735662B2 (en) * | 2014-01-23 | 2017-08-15 | Denso Corporation | Insulation communication device |
US20160013742A1 (en) * | 2014-07-09 | 2016-01-14 | Rohm Co., Ltd. | Motor driving circuit, cooling device and electronic apparatus including the same |
US9800185B2 (en) * | 2014-07-09 | 2017-10-24 | Rohm Co., Ltd. | Motor driving circuit, cooling device and electronic apparatus including the same |
CN107005235A (en) * | 2014-12-12 | 2017-08-01 | 罗伯特·博世有限公司 | Method and apparatus for run switch element |
CN106533322A (en) * | 2015-09-14 | 2017-03-22 | 英飞凌科技股份有限公司 | Calculation of MOSFET switch temperature in motor control |
US9608558B1 (en) * | 2015-09-14 | 2017-03-28 | Infineon Technologies Ag | Calculation of MOSFET switch temperature in motor control |
US20180284181A1 (en) * | 2015-11-05 | 2018-10-04 | Crrc Zhuzhou Institute Co., Ltd. | On-line health management device and method for insulated gate bipolar transistor |
EP3273599A1 (en) * | 2016-07-19 | 2018-01-24 | Rohm Co., Ltd. | Signal transmission circuit and vehicle |
US10333499B2 (en) | 2016-07-19 | 2019-06-25 | Rohm Co., Ltd. | Signal transmission circuit and vehicle |
CN106230409A (en) * | 2016-08-25 | 2016-12-14 | 中车株洲电力机车研究所有限公司 | A kind of IGBT parallel drivers of band NTC acquisition function |
CN108183656A (en) * | 2016-12-08 | 2018-06-19 | 福特全球技术公司 | The self-balancing parallel power device of gate drivers with temperature-compensating |
US10090792B2 (en) * | 2016-12-08 | 2018-10-02 | Ford Global Technologies, Llc | Self-balancing parallel power devices with a temperature compensated gate driver |
US11022499B2 (en) * | 2017-04-13 | 2021-06-01 | Fuji Electric Co., Ltd. | Temperature detection device and power conversion device |
US10890493B2 (en) * | 2018-02-14 | 2021-01-12 | Infineon Technologies Ag | Systems and methods for measuring transistor junction temperature while operating |
US20190250046A1 (en) * | 2018-02-14 | 2019-08-15 | Infineon Technologies Ag | Systems and methods for measuring transistor junction temperature while operating |
DE102018206053A1 (en) * | 2018-04-20 | 2019-10-24 | Audi Ag | Circuit arrangement and motor vehicle |
CN109682491A (en) * | 2018-12-11 | 2019-04-26 | 深圳市法拉第电驱动有限公司 | A kind of temperature sampling circuit, wiring board, electric machine controller and electric car |
CN109632118A (en) * | 2018-12-20 | 2019-04-16 | 中国电子科技集团公司第四十八研究所 | A kind of CMOS temperature sensing circuit and MEMS temperature sensor system |
CN109632118B (en) * | 2018-12-20 | 2020-09-18 | 中国电子科技集团公司第四十八研究所 | CMOS temperature sensing circuit and MEMS temperature sensor system |
CN110944431A (en) * | 2019-12-16 | 2020-03-31 | 华帝股份有限公司 | LED lamp failure detection circuit and electrical and temperature failure detection method |
CN111043067B (en) * | 2019-12-31 | 2022-07-15 | 宁波奥克斯电气股份有限公司 | Fan control method, fan, smart home system and storage medium |
CN111043067A (en) * | 2019-12-31 | 2020-04-21 | 宁波奥克斯电气股份有限公司 | Fan control method, fan, smart home system and storage medium |
US20230146017A1 (en) * | 2020-03-30 | 2023-05-11 | Rohm Co., Ltd. | Comparator circuit |
CN111609943A (en) * | 2020-05-11 | 2020-09-01 | Oppo广东移动通信有限公司 | Temperature detection circuit |
US20210384819A1 (en) * | 2020-06-05 | 2021-12-09 | Fuji Electric Co., Ltd. | Power converter |
US11736000B2 (en) * | 2020-06-05 | 2023-08-22 | Fuji Electric Co., Ltd. | Power converter with thermal resistance monitoring |
US20230208281A1 (en) * | 2021-12-27 | 2023-06-29 | GM Global Technology Operations LLC | Method for detecting early degradation within the inverter module |
US11716014B2 (en) * | 2021-12-27 | 2023-08-01 | GM Global Technology Operations LLC | Method for detecting early degradation within the inverter module |
CN117589323A (en) * | 2024-01-19 | 2024-02-23 | 常州通宝光电股份有限公司 | High-voltage isolation area temperature acquisition circuit |
Also Published As
Publication number | Publication date |
---|---|
US9523613B2 (en) | 2016-12-20 |
US20150117492A1 (en) | 2015-04-30 |
JP2012227517A (en) | 2012-11-15 |
JP6104512B2 (en) | 2017-03-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9523613B2 (en) | Temperature detecting circuit and temperature detecting apparatus using the same | |
JP5714455B2 (en) | Semiconductor integrated circuit | |
US7622887B2 (en) | Power electronics equipments | |
US9166499B2 (en) | Electronic circuit operating based on isolated switching power source | |
EP1691483B1 (en) | Interface circuit, power conversion device, and vehicle-mounted electric machinery system | |
US7956566B2 (en) | Driver IC with HV-isolation, especially hybrid electric vehicle motor drive concept | |
US8288894B2 (en) | Power electronics equipment for transmitting signals to switching devices through air-cored insulating transformer | |
US7466169B2 (en) | Signal detecting device and method for inductive load | |
US10615787B2 (en) | Switch drive circuit for switch reducing LC resonance | |
US20090243764A1 (en) | Gate-driver IC with HV-isolation, especially hybrid electric vehicle motor drive concept | |
JP4528841B2 (en) | Power converter | |
JP2006121834A (en) | Power conversion apparatus | |
JP2009232637A (en) | Switch controller and motor drive using the same | |
US7960937B2 (en) | Inverter unit, integrated circuit chip, and vehicle drive apparatus | |
JPWO2014167734A1 (en) | Electronic equipment | |
US20130088279A1 (en) | Power Converter | |
US11277125B2 (en) | Drive circuit for driven switches | |
US20190273448A1 (en) | Method for operating a current converter and current converter operating according to said method | |
JP5061036B2 (en) | Isolated communication circuit | |
JP6609336B2 (en) | Temperature detecting device and driving device | |
JP2011007580A (en) | Temperature detecting device of power switching element | |
JP3689130B2 (en) | Driver circuit | |
WO2017099191A1 (en) | Signal transfer circuit | |
JP3819807B2 (en) | Insulation drive type inverter device | |
US10931197B2 (en) | Power conversion device of motor vehicles |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: ROHM CO., LTD., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:TAKIHARA, HIROTAKA;TAKAHASHI, SHINTARO;REEL/FRAME:028383/0582 Effective date: 20120613 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |