US20100149504A1 - Illumination device of a microlithographic projection exposure apparatus, and microlithographic projection exposure method - Google Patents
Illumination device of a microlithographic projection exposure apparatus, and microlithographic projection exposure method Download PDFInfo
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- US20100149504A1 US20100149504A1 US12/637,889 US63788909A US2010149504A1 US 20100149504 A1 US20100149504 A1 US 20100149504A1 US 63788909 A US63788909 A US 63788909A US 2010149504 A1 US2010149504 A1 US 2010149504A1
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- 238000005286 illumination Methods 0.000 title claims abstract description 85
- 238000000034 method Methods 0.000 title claims description 9
- 230000003287 optical effect Effects 0.000 claims abstract description 46
- 210000001747 pupil Anatomy 0.000 claims abstract description 29
- 230000010287 polarization Effects 0.000 claims description 24
- 238000009826 distribution Methods 0.000 claims description 7
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- 230000001419 dependent effect Effects 0.000 claims description 3
- 238000003384 imaging method Methods 0.000 claims description 3
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- 230000000694 effects Effects 0.000 description 6
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- 238000010276 construction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001393 microlithography Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
Definitions
- the disclosure relates to an illumination device of a microlithographic projection exposure apparatus, and to a microlithographic projection exposure method.
- the disclosure relates to an illumination device and to a microlithographic projection exposure method which, in conjunction with comparatively little structural outlay, enable a light property such as, e.g., the polarization or the intensity to be flexibly and rapidly changed or adapted.
- Microlithography is employed for producing microstructured components such as integrated circuits or LCDs, for example.
- the microlithography process is typically carried out in a so-called projection exposure apparatus, having an illumination device and a projection objective.
- a substrate e.g., a silicon wafer
- a light-sensitive layer e.g., photoresist
- a microlithographic projection exposure apparatus there is a need to set defined illumination settings, that is to say intensity distributions in a pupil plane of the illumination device, in a targeted manner.
- defined illumination settings that is to say intensity distributions in a pupil plane of the illumination device
- mirror arrangements are also known for this purpose, e.g., from WO 2005/026843 A2.
- Such mirror arrangements include a multiplicity of micromirrors that can be set independently of one another.
- One application example thereof is, for instance, the compensation of polarization-dependent reflection properties of the HR layers present on the mirrors or AR layers present on the lenses, which, without compensation measures, have the effect that, e.g., elliptically polarized light is generated from originally linearly polarized light.
- illumination settings which are sometimes also referred to as “freeform illumination settings” and which can have, e.g., a plurality of illumination poles in such a way that in some of said illumination poles the polarization direction is oriented perpendicularly (that is to say tangentially) and in others of said illumination poles the polarization direction is oriented parallel (that is to say radially) with respect to the radius directed at the optical system axis.
- illumination settings are used, e.g., in so-called “source mask optimization” in conjunction with comparatively exotic mask structures in order to obtain the desired structure by suitable combination of the mask design with the illumination setting during imaging at the wafer level.
- Illumination devices are disclosed that provide a microlithographic projection exposure apparatus and a microlithographic projection exposure method which, in conjunction with comparatively little structural outlay, enable a light property such as the polarization or the intensity, for example, to be flexibly and rapidly changed or adapted.
- the invention features an illumination device of a microlithographic projection exposure apparatus that has a deflection device, with which at least two light beams impinging on the deflection device can be variably deflected independently of one another by variation of the deflection angle in each case in such a way that each of said light beams can be directed onto at least one location in a pupil plane of the illumination device via at least two different beam paths, wherein, on said beam paths, at least one optical property of the respective light beam is influenced differently.
- different beam paths are provided for at least two light beams of the illumination light (preferably for all the light beams) independently of one another, thereby creating increased (e.g., maximum) flexibility with regard to the obtainable manipulation of the relevant light property (e.g., polarization) or the illumination setting ultimately obtained in the pupil plane.
- the relevant light property e.g., polarization
- the manipulation of the relevant light property can be obtained solely by utilizing the degrees of freedom provided by the deflection device; in other words, no additional switchable components (such as, e.g., a Pockels cell) are required.
- the flexible setting or variation of the illumination setting that is made possible can therefore be realized with comparatively little structural outlay.
- each location in the pupil plane (PP) is illuminated by a respective light beam impinging on the deflection device, via at least two different beam paths.
- Different illumination settings can be set in the pupil plane by sole variation of deflection angles produced by the deflection device.
- a polarization-manipulating optical element e.g., an optical retarder or an optical rotator
- a polarization-manipulating optical element e.g., an optical retarder or an optical rotator
- An optical property that is influenced differently on said beam paths can be the polarization state of the respective light beam.
- an optical property that is influenced differently on said beam paths is the intensity of the respective light beam.
- An optical property that is influenced differently on said beam paths can be the wavelength of the respective light beam.
- the deflection device is embodied as a mirror arrangement having a plurality of mirror elements which can be adjusted independently of one another in order to alter an angle distribution of the light reflected by the mirror arrangement.
- the mirror elements can be adjusted in an angular range comprising at least the range of ⁇ 2° to +2°, in particular at least the range of ⁇ 5° to +5°, more particularly at least the range of ⁇ 10° to +10°.
- embodiments are not restricted to the configuration of the deflection device in the form of a mirror device or an MMA.
- an MMA instead of an MMA, by way of example, it is also possible to provide an exchangeable diffractive optical element (DOE) for producing alternative beam paths.
- DOE exchangeable diffractive optical element
- the illumination device furthermore can have a control device for driving the deflection device in a manner dependent on an operating state of the illumination device.
- the invention features a mirror arrangement, in particular for use in an illumination device, including a plurality of mirror elements which can be adjusted independently of one another in order to alter an angle distribution of the light reflected by the mirror arrangement, wherein at least one of said mirror elements has a plurality of reflective surfaces which influence at least one optical property of the respectively reflected light in a different manner.
- At least two of said reflective surfaces are arranged at a finite angle with respect to one another.
- the optical property influenced in a different manner can be, in particular, the polarization state of the respectively reflected light.
- the invention features a microlithographic projection exposure method, wherein an object plane of a projection objective is illuminated by means of an illumination device, and wherein the object plane is imaged into an image plane of the projection objective using the projection objective, wherein light beams impinging on a deflection device provided in the illumination device are deflected by a deflection angle that can be set in variable fashion, and wherein different illumination settings are set in a pupil plane of the illumination device by sole variation of deflection angles produced by the deflection device.
- the invention features a microlithographic projection exposure apparatus and a method for the microlithographic production of microstructured components.
- FIG. 1 shows a schematic illustration of an embodiment of a microlithographic projection exposure apparatus
- FIG. 2 shows a schematic illustration of an embodiment of a mirror arrangement in the illumination device from FIG. 1 , and the manner of its operation;
- FIGS. 3 shows a schematic illustration of an embodiment of a mirror arrangement
- FIG. 4 shows a schematic illustration of components of an illumination device
- FIGS. 5 a - c shows schematic illustrations of an embodiment of a mirror arrangement
- FIGS. 6 a - b show examples of illumination settings set in a pupil plane of the illumination device.
- the projection exposure apparatus has an illumination device 10 and also a projection objective 20 .
- the illumination device 10 serves for illuminating a structure-bearing mask (reticle) 30 with light from a light source unit 1 , which includes, for example, an ArF excimer laser for an operating wavelength of 193 nm and also a beam shaping optical unit that produces a parallel light beam.
- a light source unit 1 which includes, for example, an ArF excimer laser for an operating wavelength of 193 nm and also a beam shaping optical unit that produces a parallel light beam.
- the illumination device 10 and also the projection objective 20 are preferably designed for an operating wavelength of less than 250 nm, more particularly less than 200 nm.
- the light source unit 1 can therefore alternatively, e.g., also have an F 2 laser for an operating wavelength of 157 nm.
- the illumination device 10 has an optical unit 11 , including, in particular, a deflection device in the form of a mirror arrangement (MMA) 200 for the variation of the illumination setting produced in a pupil plane of the illumination device, and also, in the example illustrated, a deflection mirror 12 .
- a deflection device in the form of a mirror arrangement (MMA) 200 for the variation of the illumination setting produced in a pupil plane of the illumination device, and also, in the example illustrated, a deflection mirror 12 .
- MMA mirror arrangement
- a light mixing device Situated in the beam path in the light propagation direction downstream of the optical unit 11 are a light mixing device (not illustrated), which can have, for example, an arrangement of micro-optical elements that is suitable for achieving a light mixing, and also a lens group 14 , behind which is situated a field plane with a reticle masking system (REMA), which is imaged by a REMA objective 15 disposed downstream in the light propagation direction onto the structure-bearing mask (reticle) 30 , which is arranged in a further field plane, and thereby delimits the illuminated region on the reticle.
- the structure-bearing mask 30 is imaged by means of the projection objective 20 onto a substrate 40 , or a wafer, provided with a light-sensitive layer.
- the projection objective 20 can be designed for immersion operation, in particular. Furthermore, it can have a numerical aperture NA of greater than 0.85, in particular greater than 1.1.
- the mirror arrangement 200 has a plurality of mirror elements 200 a, 200 b, 200 c, . . . .
- the mirror elements 200 a, 200 b, 200 c, . . . are adjustable independently of one another for altering an angle distribution of the light reflected by the mirror arrangement 200 , wherein, in accordance with FIG. 1 , provision may be made of a driving unit 105 for driving this adjustment (e.g., by means of suitable actuators).
- each of the mirror elements 200 a, 200 b, 200 c, . . . generates a light spot having a diameter d in the pupil plane PP, wherein the positions thereof can be varied by corresponding tilting of the mirror elements.
- the flexibility provided by the mirror arrangement 200 with regard to the beam paths that can be set for the light beams passing through the illumination device is utilized then for changing over between different illumination settings, wherein said illumination settings can differ from one another in particular by virtue of the in the polarization states obtained at specific pupil locations or illumination poles.
- Embodiments can be distinguished by the fact that for this variation of the illumination settings, no additional switchable components (such as, e.g., a Pockels cell) are utilized for changing over between different polarization states; rather the degrees of freedom already present in the system on account of a deflection device, such as a mirror arrangement for example, present for setting different illumination settings are utilized in order to manipulate at least one further light property solely by variation of the setting of the deflection device.
- a deflection device such as a mirror arrangement for example
- the illumination device is configured in such a way that a light beam impinging on the mirror arrangement 200 , by variation of the deflection angle, that is to say adjustment of the mirror element(s), can be directed respectively onto the same location in the pupil plane (PP) via different beam paths.
- the arrangement can be chosen such that each individual mirror element 200 a, 200 b, 200 c, . . . of the mirror arrangement 200 can reach each location within the illuminable region of the pupil plane PP on a plurality of different and mutually separate beam paths, or paths.
- an optical element is arranged in at least one of said paths, said optical element influencing at least one optical property of the light beam impinging on said optical element.
- the disclosure is not restricted thereto.
- it is also possible e.g. to influence the intensity of the respective light beam on the relevant beam path in which case, for example, a neutral filter can be used in the respective beam path.
- the mirror elements 200 a, 200 b, 200 c, . . . of the mirror arrangement 200 can also be illuminated to different extents (by way of example, the intensity of the light impinging on the mirror arrangement 200 can be higher in the center of the mirror arrangement 200 than at the edge thereof), or the mirror elements 200 a, 200 b, 200 c, . . . can have different reflectivities.
- FIG. 3 shows an arrangement that includes a first plane mirror 320 and a second plane mirror 330 , arranged parallel thereto, this arrangement being situated downstream of a mirror arrangement 310 in the light propagation direction.
- FIG. 3 illustrates how a light beam proceeding from the same location or mirror element of the mirror arrangement 310 can respectively reach the same location within the pupil plane PP on three different beam paths, wherein these beam paths are designated by S 31 , S 32 and S 33 and illustrated by differently dashed (S 32 and S 33 ) and solid (S 31 ) lines in FIG. 3 .
- the beam path respectively chosen by the light beam can be selected by the variation of the tilting angle of the relevant mirror element of the mirror arrangement 310 .
- the embodiment in FIG. 3 is thus distinguished by the fact that the illumination of pupil plane PP is effected by utilizing multiple reflection at mutually opposite reflection surfaces.
- the arrangement of plane mirrors as shown in FIG. 3 is not necessarily required; rather, provision may also be made of other reflective surfaces, for example also by utilizing total reflection.
- 350 a, 350 b and 350 c designate optical elements or sections on the first plane mirror 320 which influence the polarization state of light beams respectively impinging on said sections in mutually different ways.
- a light beam can be directed as far as the extreme left-hand edge of the illuminated region of the pupil plane PP alternatively via the beam paths S 31 , S 32 or S 33 , wherein the light beam passes through either the element 350 a, the element 350 b or the element 350 c depending on the beam path.
- a different polarization state is impressed on the relevant light beam, such that the setting of illumination settings which are different with regard to the polarization state is made possible without the use of further switchable components and by sole variation of the setting of the deflection device or of the deflection angles produced by the latter.
- the optical elements or sections 350 a, 350 b and 350 c can be embodied as retarders, for example, which, in transmission, set a retardation for light beams passing through and through which, depending on the position of the sections, the illumination light passes twice (in the case of arrangement directly on the mirror surface and suitable spacing of the sections) or alternatively just once (wherein in the latter case, e.g., the reflected beam no longer passes through the respective retarder).
- Retardation denotes the difference in the optical paths of two orthogonal (mutually perpendicular) polarization states.
- the retarders can be produced in a known manner from optically uniaxial material such as, e.g., magnesium fluoride (MgF 2 ) having a suitable thickness.
- the optical elements 350 a, 350 b and 350 c can also be embodied as rotators which, by means of circular birefringence, bring about a rotation of the polarization direction and can be produced from optically active material, such as, e.g., crystalline quartz having a thickness suitable for the desired rotation angle and having a crystal axis running parallel to the optical system axis.
- the number of, in total, three polarization-optical sections present in the example in FIG. 3 is merely by way of example, and it is also possible to provide more or fewer of such different optical elements or sections (in particular including just a single optical element). Furthermore, these sections or optical elements can be arranged directly on the plane mirror 320 , as shown in FIG. 3 , or else at a distance therefrom (that is to say between the plane mirrors 320 and 330 ).
- FIG. 4 shows a further embodiment, in which once again—analogously to FIG. 3 —proceeding from the same mirror element of a mirror arrangement 410 , one and the same location in the pupil plane PP can be illuminated via different beam paths.
- optical elements 450 a, 450 b and 450 c are situated in these beam paths, which are designated by S 41 , S 42 and S 43 and illustrated in differently dashed fashion in FIG. 4 , wherein only the element 450 a is passed through on the beam path S 41 , only the element 450 b is passed through on the beam path S 42 and only the element 450 c is passed through on the beam path S 43 .
- a positive lens 420 Situated between the mirror arrangement 410 and the pupil plane PP is a positive lens 420 , the light proceeding from the mirror arrangement 410 being directed onto the pupil plane PP by virtue of the refractive power of said lens.
- further beam-deflecting elements in the form of wedge-shaped prisms 430 and 440 in FIG. 4 are provided, which have the effect that light beams which run from the same location on the mirror arrangement 410 owing to variation of the tilting angle of the relevant mirror element at different angles or on different beam paths in the direction of the lens 420 (that is to say, e.g., on the beam paths S 41 , S 42 and S 43 ), impinge on the same location on the pupil plane PP.
- beam-deflecting elements 430 and 440 are necessary in the example in FIG. 4 since the light beams proceeding from the mirror arrangement 410 at mutually different angles would not impinge on the same location in the pupil plane PP solely by means of the positive lens 420 , and so the beam-deflecting elements 430 and 440 with wedge angles chosen in a suitable manner for providing the required deflection angles are necessary for the desired effect explained above.
- the beam-deflecting elements 430 and 440 in the same way as the positive lens 420 , can be produced from suitable lens material, for example quartz glass (SiO 2 ).
- suitable lens material for example quartz glass (SiO 2 ).
- the individual mirror elements of the mirror arrangement can also be configured in such a way that the different polarization-optical regions or elements are integrated into these mirror elements.
- each of the mirror elements has three plane surfaces 511 a, 511 b and 511 c having mutually different polarization-optical effects (illustrated merely schematically by “A”, “B” and “C”, respectively, in FIG. 5 ).
- these different polarization-optical effects can once again be realized by suitable retarders or optical rotators which can in each case be applied (e.g., adhesively bonded) directly on one of the mirror surfaces 511 a, 511 b and 511 c.
- the number of different polarization-optical regions or the number of plane surfaces of each of the mirror elements is not limited to three, but can also be larger or smaller.
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Abstract
Illumination devices of a microlithographic projection exposure apparatus, include a deflection device with which at least two light beams impinging on the deflection device can be variably deflected independently of one another by variation of the deflection angle in each case in such a way that each of the light beams can be directed onto at least one location in a pupil plane of the illumination device via at least two different beam paths; wherein, on the beam paths, at least one optical property of the respective light beam is influenced differently.
Description
- This applications claims priority under 35 U.S.C. §119 to German Patent Application DE 10 2008 054 844.8, filed Dec. 17, 2008. The contents of DE 10 2008 054 844.8 are incorporated herein by reference in its entirety.
- The disclosure relates to an illumination device of a microlithographic projection exposure apparatus, and to a microlithographic projection exposure method. In particular, the disclosure relates to an illumination device and to a microlithographic projection exposure method which, in conjunction with comparatively little structural outlay, enable a light property such as, e.g., the polarization or the intensity to be flexibly and rapidly changed or adapted.
- Microlithography is employed for producing microstructured components such as integrated circuits or LCDs, for example. The microlithography process is typically carried out in a so-called projection exposure apparatus, having an illumination device and a projection objective. In this case, the image of a mask (=reticle) illuminated by means of the illumination device is projected, by means of the projection objective, onto a substrate (e.g., a silicon wafer) coated with a light-sensitive layer (e.g., photoresist) and arranged in the image plane of the projection objective, in order to transfer the mask structure to the light-sensitive coating of the substrate. During operation of a microlithographic projection exposure apparatus there is a need to set defined illumination settings, that is to say intensity distributions in a pupil plane of the illumination device, in a targeted manner. In addition to the use of diffractive optical elements (so-called DOEs), the use of mirror arrangements is also known for this purpose, e.g., from WO 2005/026843 A2. Such mirror arrangements include a multiplicity of micromirrors that can be set independently of one another.
- Various further approaches are known for setting specific polarization distributions in a targeted manner, for the purpose of optimizing the imaging contrast, in particular in the pupil plane of the illumination device or in the reticle plane.
- There can be a need to be able to set further different distributions of the polarization and/or intensity in the illumination device (that is to say different illumination settings). One application example thereof is, for instance, the compensation of polarization-dependent reflection properties of the HR layers present on the mirrors or AR layers present on the lenses, which, without compensation measures, have the effect that, e.g., elliptically polarized light is generated from originally linearly polarized light.
- Furthermore, there is increasingly also a need to produce further illumination settings, which are sometimes also referred to as “freeform illumination settings” and which can have, e.g., a plurality of illumination poles in such a way that in some of said illumination poles the polarization direction is oriented perpendicularly (that is to say tangentially) and in others of said illumination poles the polarization direction is oriented parallel (that is to say radially) with respect to the radius directed at the optical system axis. Such illumination settings are used, e.g., in so-called “source mask optimization” in conjunction with comparatively exotic mask structures in order to obtain the desired structure by suitable combination of the mask design with the illumination setting during imaging at the wafer level.
- Illumination devices are disclosed that provide a microlithographic projection exposure apparatus and a microlithographic projection exposure method which, in conjunction with comparatively little structural outlay, enable a light property such as the polarization or the intensity, for example, to be flexibly and rapidly changed or adapted.
- In a first aspect, the invention features an illumination device of a microlithographic projection exposure apparatus that has a deflection device, with which at least two light beams impinging on the deflection device can be variably deflected independently of one another by variation of the deflection angle in each case in such a way that each of said light beams can be directed onto at least one location in a pupil plane of the illumination device via at least two different beam paths, wherein, on said beam paths, at least one optical property of the respective light beam is influenced differently.
- Embodiments feature utilizing a deflection device present in an illumination device, which deflection device (for instance in the form of a mirror arrangement, referred to for short as MMA=“micro mirror array”) is present anyway in diverse designs for the variation of the illumination setting produced in the pupil plane, for offering the illumination light alternative beam paths within the illumination device in which in turn at least one further light property (e.g., the polarization state, the intensity and/or the wavelength of the light) is influenced in a different manner relative to the respective beam paths.
- In this case—for instance in contrast to dividing the illumination device into mutually separate or parallel-connected modules—different beam paths are provided for at least two light beams of the illumination light (preferably for all the light beams) independently of one another, thereby creating increased (e.g., maximum) flexibility with regard to the obtainable manipulation of the relevant light property (e.g., polarization) or the illumination setting ultimately obtained in the pupil plane.
- Among other advantages, the manipulation of the relevant light property (e.g. polarization) can be obtained solely by utilizing the degrees of freedom provided by the deflection device; in other words, no additional switchable components (such as, e.g., a Pockels cell) are required. The flexible setting or variation of the illumination setting that is made possible can therefore be realized with comparatively little structural outlay.
- For realizing the different influencing of the light property (e.g., polarization) for the mutually different beam paths, all that may be necessary is to adapt the deflection angles that can be produced by the deflection device to the arrangement of optical elements used in the relevant beam paths for the manipulation of the relevant light property, that the relevant optical property of the beam bundle can be influenced differently for the beam paths.
- In some embodiments, each location in the pupil plane (PP) is illuminated by a respective light beam impinging on the deflection device, via at least two different beam paths.
- Different illumination settings can be set in the pupil plane by sole variation of deflection angles produced by the deflection device.
- In certain embodiments, a polarization-manipulating optical element (e.g., an optical retarder or an optical rotator) is arranged in at least one of said beam paths.
- An optical property that is influenced differently on said beam paths can be the polarization state of the respective light beam.
- In some embodiments, an optical property that is influenced differently on said beam paths is the intensity of the respective light beam.
- An optical property that is influenced differently on said beam paths can be the wavelength of the respective light beam.
- In certain embodiments, the deflection device is embodied as a mirror arrangement having a plurality of mirror elements which can be adjusted independently of one another in order to alter an angle distribution of the light reflected by the mirror arrangement. The mirror elements can be adjusted in an angular range comprising at least the range of −2° to +2°, in particular at least the range of −5° to +5°, more particularly at least the range of −10° to +10°.
- However, embodiments are not restricted to the configuration of the deflection device in the form of a mirror device or an MMA. In certain embodiments, instead of an MMA, by way of example, it is also possible to provide an exchangeable diffractive optical element (DOE) for producing alternative beam paths.
- The illumination device furthermore can have a control device for driving the deflection device in a manner dependent on an operating state of the illumination device.
- In another aspect, the invention features a mirror arrangement, in particular for use in an illumination device, including a plurality of mirror elements which can be adjusted independently of one another in order to alter an angle distribution of the light reflected by the mirror arrangement, wherein at least one of said mirror elements has a plurality of reflective surfaces which influence at least one optical property of the respectively reflected light in a different manner.
- In some embodiments, at least two of said reflective surfaces are arranged at a finite angle with respect to one another. The optical property influenced in a different manner can be, in particular, the polarization state of the respectively reflected light.
- In a further aspect, the invention features a microlithographic projection exposure method, wherein an object plane of a projection objective is illuminated by means of an illumination device, and wherein the object plane is imaged into an image plane of the projection objective using the projection objective, wherein light beams impinging on a deflection device provided in the illumination device are deflected by a deflection angle that can be set in variable fashion, and wherein different illumination settings are set in a pupil plane of the illumination device by sole variation of deflection angles produced by the deflection device.
- In another aspect, the invention features a microlithographic projection exposure apparatus and a method for the microlithographic production of microstructured components.
- Further configurations can be gathered from the description and also the claims.
- Embodiments are described in greater detail below in conjunction with the accompanying figures.
-
FIG. 1 shows a schematic illustration of an embodiment of a microlithographic projection exposure apparatus; -
FIG. 2 shows a schematic illustration of an embodiment of a mirror arrangement in the illumination device fromFIG. 1 , and the manner of its operation; -
FIGS. 3 shows a schematic illustration of an embodiment of a mirror arrangement; -
FIG. 4 shows a schematic illustration of components of an illumination device; -
FIGS. 5 a-c shows schematic illustrations of an embodiment of a mirror arrangement; and -
FIGS. 6 a-b show examples of illumination settings set in a pupil plane of the illumination device. - A basic construction of a microlithographic projection exposure apparatus with an optical system is firstly explained below with reference to
FIG. 1 . The projection exposure apparatus has anillumination device 10 and also aprojection objective 20. Theillumination device 10 serves for illuminating a structure-bearing mask (reticle) 30 with light from alight source unit 1, which includes, for example, an ArF excimer laser for an operating wavelength of 193 nm and also a beam shaping optical unit that produces a parallel light beam. In general, theillumination device 10 and also theprojection objective 20 are preferably designed for an operating wavelength of less than 250 nm, more particularly less than 200 nm. Thelight source unit 1 can therefore alternatively, e.g., also have an F2 laser for an operating wavelength of 157 nm. - The
illumination device 10 has anoptical unit 11, including, in particular, a deflection device in the form of a mirror arrangement (MMA) 200 for the variation of the illumination setting produced in a pupil plane of the illumination device, and also, in the example illustrated, adeflection mirror 12. Situated in the beam path in the light propagation direction downstream of theoptical unit 11 are a light mixing device (not illustrated), which can have, for example, an arrangement of micro-optical elements that is suitable for achieving a light mixing, and also alens group 14, behind which is situated a field plane with a reticle masking system (REMA), which is imaged by aREMA objective 15 disposed downstream in the light propagation direction onto the structure-bearing mask (reticle) 30, which is arranged in a further field plane, and thereby delimits the illuminated region on the reticle. The structure-bearingmask 30 is imaged by means of theprojection objective 20 onto asubstrate 40, or a wafer, provided with a light-sensitive layer. - The
projection objective 20 can be designed for immersion operation, in particular. Furthermore, it can have a numerical aperture NA of greater than 0.85, in particular greater than 1.1. - In the construction illustrated schematically in
FIG. 2 , themirror arrangement 200 has a plurality ofmirror elements mirror elements mirror arrangement 200, wherein, in accordance withFIG. 1 , provision may be made of adriving unit 105 for driving this adjustment (e.g., by means of suitable actuators). - In accordance with
FIG. 2 , each of themirror elements - The flexibility provided by the
mirror arrangement 200 with regard to the beam paths that can be set for the light beams passing through the illumination device is utilized then for changing over between different illumination settings, wherein said illumination settings can differ from one another in particular by virtue of the in the polarization states obtained at specific pupil locations or illumination poles. - Embodiments can be distinguished by the fact that for this variation of the illumination settings, no additional switchable components (such as, e.g., a Pockels cell) are utilized for changing over between different polarization states; rather the degrees of freedom already present in the system on account of a deflection device, such as a mirror arrangement for example, present for setting different illumination settings are utilized in order to manipulate at least one further light property solely by variation of the setting of the deflection device. For this purpose, as explained in greater detail below with reference to
FIGS. 3 and 4 , the illumination device is configured in such a way that a light beam impinging on themirror arrangement 200, by variation of the deflection angle, that is to say adjustment of the mirror element(s), can be directed respectively onto the same location in the pupil plane (PP) via different beam paths. - In particular, the arrangement can be chosen such that each
individual mirror element mirror arrangement 200 can reach each location within the illuminable region of the pupil plane PP on a plurality of different and mutually separate beam paths, or paths. In some embodiments, an optical element is arranged in at least one of said paths, said optical element influencing at least one optical property of the light beam impinging on said optical element. - Even though said light property is the polarization state in the exemplary embodiments described below with reference to
FIGS. 3 and 4 , the disclosure is not restricted thereto. In accordance with further embodiments, it is also possible e.g. to influence the intensity of the respective light beam on the relevant beam path, in which case, for example, a neutral filter can be used in the respective beam path. Furthermore, in order to vary the intensity, themirror elements mirror arrangement 200 can also be illuminated to different extents (by way of example, the intensity of the light impinging on themirror arrangement 200 can be higher in the center of themirror arrangement 200 than at the edge thereof), or themirror elements -
FIG. 3 shows an arrangement that includes afirst plane mirror 320 and asecond plane mirror 330, arranged parallel thereto, this arrangement being situated downstream of amirror arrangement 310 in the light propagation direction. In this case,FIG. 3 illustrates how a light beam proceeding from the same location or mirror element of themirror arrangement 310 can respectively reach the same location within the pupil plane PP on three different beam paths, wherein these beam paths are designated by S31, S32 and S33 and illustrated by differently dashed (S32 and S33) and solid (S31) lines inFIG. 3 . The beam path respectively chosen by the light beam can be selected by the variation of the tilting angle of the relevant mirror element of themirror arrangement 310. - The embodiment in
FIG. 3 is thus distinguished by the fact that the illumination of pupil plane PP is effected by utilizing multiple reflection at mutually opposite reflection surfaces. In order to realize this principle, the arrangement of plane mirrors as shown inFIG. 3 is not necessarily required; rather, provision may also be made of other reflective surfaces, for example also by utilizing total reflection. 350 a, 350 b and 350 c designate optical elements or sections on thefirst plane mirror 320 which influence the polarization state of light beams respectively impinging on said sections in mutually different ways. - It becomes clear from
FIG. 3 that, by using corresponding setting of the tilting angle, e.g., of the mirror element arranged furthest on the left in the light propagation direction on themirror arrangement 310 inFIG. 3 , a light beam can be directed as far as the extreme left-hand edge of the illuminated region of the pupil plane PP alternatively via the beam paths S31, S32 or S33, wherein the light beam passes through either theelement 350 a, theelement 350 b or theelement 350 c depending on the beam path. Depending on whichelement - The optical elements or
sections - The retarders can be produced in a known manner from optically uniaxial material such as, e.g., magnesium fluoride (MgF2) having a suitable thickness. In some embodiments, the
optical elements - It goes without saying that the number of, in total, three polarization-optical sections present in the example in
FIG. 3 is merely by way of example, and it is also possible to provide more or fewer of such different optical elements or sections (in particular including just a single optical element). Furthermore, these sections or optical elements can be arranged directly on theplane mirror 320, as shown inFIG. 3 , or else at a distance therefrom (that is to say between the plane mirrors 320 and 330). -
FIG. 4 shows a further embodiment, in which once again—analogously to FIG. 3—proceeding from the same mirror element of amirror arrangement 410, one and the same location in the pupil plane PP can be illuminated via different beam paths. Once again (in particular polarization-)optical elements FIG. 4 , wherein only theelement 450 a is passed through on the beam path S41, only theelement 450 b is passed through on the beam path S42 and only theelement 450 c is passed through on the beam path S43. - Consequently, analogously to the embodiment shown in
FIG. 3 , it is possible to select for each assignment between a mirror element of themirror arrangement 410 and a location in the pupil plane PP that path or beam path in which the polarization-optical element having the desired polarization-optical effect is situated in order, in this way, to impress a desired polarization state on the relevant light beam in variable fashion. - Situated between the
mirror arrangement 410 and the pupil plane PP is apositive lens 420, the light proceeding from themirror arrangement 410 being directed onto the pupil plane PP by virtue of the refractive power of said lens. In addition to thepositive lens 420, further beam-deflecting elements, in the form of wedge-shaped prisms 430 and 440 inFIG. 4 are provided, which have the effect that light beams which run from the same location on themirror arrangement 410 owing to variation of the tilting angle of the relevant mirror element at different angles or on different beam paths in the direction of the lens 420 (that is to say, e.g., on the beam paths S41, S42 and S43), impinge on the same location on the pupil plane PP. These beam-deflecting elements 430 and 440 are necessary in the example inFIG. 4 since the light beams proceeding from themirror arrangement 410 at mutually different angles would not impinge on the same location in the pupil plane PP solely by means of thepositive lens 420, and so the beam-deflecting elements 430 and 440 with wedge angles chosen in a suitable manner for providing the required deflection angles are necessary for the desired effect explained above. - The beam-deflecting elements 430 and 440, in the same way as the
positive lens 420, can be produced from suitable lens material, for example quartz glass (SiO2). With regard to the possible configurations of the (polarization-)optical elements FIG. 4 , the above explanations concerningFIG. 3 are correspondingly applicable, in which case, of course, the number of three optical elements chosen in the present embodiment is merely by way of example and not restrictive. - Referring to
FIGS. 5 a-c, the individual mirror elements of the mirror arrangement can also be configured in such a way that the different polarization-optical regions or elements are integrated into these mirror elements. - Specifically, in the embodiment shown in
FIG. 5 , each of the mirror elements, of which only onemirror element 511 is illustrated schematically, has threeplane surfaces FIG. 5 ). Analogously to the embodiments described above, these different polarization-optical effects can once again be realized by suitable retarders or optical rotators which can in each case be applied (e.g., adhesively bonded) directly on one of the mirror surfaces 511 a, 511 b and 511 c. - It goes without saying that in the embodiment in
FIG. 5 , too, the number of different polarization-optical regions or the number of plane surfaces of each of the mirror elements is not limited to three, but can also be larger or smaller. - Analogously to the embodiments described above, an increased flexibility with regard to the setting of different polarization states is achieved by increasing the tilting angle range in the mirror arrangement. In contrast to the embodiments in
FIG. 3 andFIG. 4 , however, the beam paths themselves remain unchanged in the embodiment inFIG. 5 , such that (unlike in the embodiments inFIG. 3 andFIG. 4 ) in principle no further modifications may be needed in the initial system fromFIG. 2 . - While several embodiments have been described, numerous variations and alternative embodiments are possible, for example through combination and/or exchange of features of individual embodiments. Accordingly, other embodiments are in the claims.
Claims (19)
1. An illumination device of a microlithographic projection exposure apparatus, comprising:
a deflection device configured to variably deflect at least two light beams impinging on the deflection device independently of one another by variation of the deflection angle in each case in such a way that each of said light beams are directed onto at least one location in a pupil plane of the illumination device via at least two different beam paths,
wherein, on said beam paths, at least one optical property of the respective light beam is influenced differently relative to the beam paths.
2. The illumination device of claim 1 , wherein each location in the pupil plane is illuminated by a respective light beam impinging on the deflection device, via at least two different beam paths.
3. The illumination device of claim 1 , wherein different illumination settings are set in the pupil plane by sole variation of deflection angles produced by the deflection device.
4. The illumination device of claim 1 , wherein a polarization-manipulating optical element is arranged in at least one of said beam paths.
5. The illumination device of claim 4 , wherein at least one polarization-manipulating optical element is an optical retarder or an optical rotator.
6. The illumination device of claim 1 , wherein the optical property that is influenced differently on said beam paths is the polarization state of the respective light beam.
7. The illumination device of claim 1 , wherein the optical property that is influenced differently on said beam paths is the intensity of the respective light beam.
8. The illumination device of claim 1 , wherein the optical property that is influenced differently on said beam paths is the wavelength of the respective light beam.
9. The illumination device of claim 1 , wherein the deflection device is a mirror arrangement having a plurality of mirror elements which can be adjusted independently of one another in order to alter an angle distribution of the light reflected by the mirror arrangement.
10. The illumination device of claim 9 , wherein the mirror elements can be adjusted in an angular range comprising at least the range of −2° to +2°.
11. The illumination device of claim 10 , wherein the mirror elements can be adjusted in an angular range comprising at least the range of −5° to +5°.
12. The illumination device of claim 11 , wherein the mirror elements can be adjusted in an angular range comprising at least the range of −10° to +10°.
13. The illumination device of claim 1 , wherein the deflection device has an exchange device for exchanging a diffractive optical element.
14. The illumination device of claim 1 , further comprising a control device for driving the deflection device in a manner dependent on an operating state of the illumination device.
15. The illumination device of claim 1 , wherein each of the light beams are directed onto at least one location in a pupil plane of the illumination device via at least three different beam paths, wherein, on at least two of said beam paths, at least one optical property of the respective light beam is influenced differently relative to the beam paths.
16. The illumination device of claim 15 , wherein on all of the beam paths at least one optical property of the respective light beam is influenced differently relative to the beam paths.
17. A microlithographic projection exposure apparatus comprising an illumination device and a projection objective, wherein the illumination device is the illumination device of claim 1 .
18. A microlithographic projection exposure method, comprising:
illuminating an object plane of a projection objective with an illumination device; and
imaging the object plane into an image plane of the projection objective with the projection objective,
wherein during the illuminating, light beams impinging on a deflection device provided in the illumination device are deflected by a deflection angle that can be set in variable fashion, and
different illumination settings are set in a pupil plane of the illumination device by sole variation of deflection angles produced by the deflection device.
19. A method for the microlithographic production of microstructured components, comprising:
providing a substrate, to which a layer composed of a light-sensitive material is applied at least in part;
providing a mask having structures to be imaged;
providing the microlithographic projection exposure apparatus of claim 17 ; and
projecting at least one part of the mask onto a region of the layer with the aid of the projection exposure apparatus.
Priority Applications (1)
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US12/850,131 US8351023B2 (en) | 2008-12-17 | 2010-08-04 | Illumination device of a microlithographic projection exposure apparatus, and microlithographic projection exposure method |
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DE102008054844A DE102008054844B4 (en) | 2008-12-17 | 2008-12-17 | Illumination device of a microlithographic projection exposure apparatus, as well as a microlithographic projection exposure method |
DE102008054844.8 | 2008-12-17 |
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US12/850,131 Continuation US8351023B2 (en) | 2008-12-17 | 2010-08-04 | Illumination device of a microlithographic projection exposure apparatus, and microlithographic projection exposure method |
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US20100149504A1 true US20100149504A1 (en) | 2010-06-17 |
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US12/637,889 Abandoned US20100149504A1 (en) | 2008-12-17 | 2009-12-15 | Illumination device of a microlithographic projection exposure apparatus, and microlithographic projection exposure method |
US12/850,131 Active 2030-09-01 US8351023B2 (en) | 2008-12-17 | 2010-08-04 | Illumination device of a microlithographic projection exposure apparatus, and microlithographic projection exposure method |
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US12/850,131 Active 2030-09-01 US8351023B2 (en) | 2008-12-17 | 2010-08-04 | Illumination device of a microlithographic projection exposure apparatus, and microlithographic projection exposure method |
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WO2014048828A1 (en) * | 2012-09-28 | 2014-04-03 | Carl Zeiss Smt Gmbh | Optical system for a microlithographic projection exposure apparatus and microlithographic exposure method |
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US20150241792A1 (en) * | 2010-03-22 | 2015-08-27 | Asml Netherlands B.V. | Illumination system and lithographic apparatus |
US9946161B2 (en) | 2010-05-27 | 2018-04-17 | Carl Zeiss Smt Gmbh | Optical system for a microlithographic projection exposure apparatus and microlithographic exposure method |
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DE102011079777A1 (en) * | 2011-07-26 | 2013-01-31 | Carl Zeiss Smt Gmbh | Microlithographic exposure method |
JP6137179B2 (en) | 2011-07-26 | 2017-05-31 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Optical system of microlithography projection exposure apparatus and microlithography exposure method |
DE102011082481A1 (en) * | 2011-09-12 | 2012-12-27 | Carl Zeiss Smt Gmbh | Illumination system for micro-lithographic projection exposure apparatus, has several light deflection elements which generate two respective light spots whose intensity differs from each other by the polarization state of light spots |
DE102012214198A1 (en) * | 2012-08-09 | 2013-05-29 | Carl Zeiss Smt Gmbh | Illumination device for use in microlithographic projection exposure system, has polarization influencing optical element attached to reflecting side surface so that state of polarization of light beam on beam path is differently influenced |
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Also Published As
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US8351023B2 (en) | 2013-01-08 |
DE102008054844A1 (en) | 2010-07-15 |
US20100315616A1 (en) | 2010-12-16 |
DE102008054844B4 (en) | 2010-09-23 |
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