US20100123409A1 - Light-emitting devices utilizing gaseous sulfur compounds - Google Patents
Light-emitting devices utilizing gaseous sulfur compounds Download PDFInfo
- Publication number
- US20100123409A1 US20100123409A1 US12/611,887 US61188709A US2010123409A1 US 20100123409 A1 US20100123409 A1 US 20100123409A1 US 61188709 A US61188709 A US 61188709A US 2010123409 A1 US2010123409 A1 US 2010123409A1
- Authority
- US
- United States
- Prior art keywords
- light
- emitting device
- energy transmission
- substrate
- transmission coil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000003464 sulfur compounds Chemical class 0.000 title claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 230000005540 biological transmission Effects 0.000 claims abstract description 44
- 239000011593 sulfur Substances 0.000 claims abstract description 35
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 35
- 239000007789 gas Substances 0.000 claims abstract description 30
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 29
- 230000004888 barrier function Effects 0.000 claims abstract description 28
- 239000000376 reactant Substances 0.000 claims abstract description 26
- 239000011261 inert gas Substances 0.000 claims abstract description 15
- 239000000565 sealant Substances 0.000 claims abstract description 13
- 230000005672 electromagnetic field Effects 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 230000003139 buffering effect Effects 0.000 claims description 7
- 230000005684 electric field Effects 0.000 claims description 7
- 230000005284 excitation Effects 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 239000010453 quartz Substances 0.000 claims description 7
- 239000011230 binding agent Substances 0.000 claims description 5
- 229910052743 krypton Inorganic materials 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- 238000001228 spectrum Methods 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 4
- 229910052754 neon Inorganic materials 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims description 2
- HUAUNKAZQWMVFY-UHFFFAOYSA-M sodium;oxocalcium;hydroxide Chemical compound [OH-].[Na+].[Ca]=O HUAUNKAZQWMVFY-UHFFFAOYSA-M 0.000 claims 1
- QTJXVIKNLHZIKL-UHFFFAOYSA-N sulfur difluoride Chemical class FSF QTJXVIKNLHZIKL-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 11
- 230000008569 process Effects 0.000 abstract description 11
- 230000001172 regenerating effect Effects 0.000 abstract description 3
- 210000002381 plasma Anatomy 0.000 description 26
- -1 sulfur ions Chemical class 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 229910052731 fluorine Inorganic materials 0.000 description 6
- 239000011737 fluorine Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000001808 coupling effect Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000003574 free electron Substances 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000007849 furan resin Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910003082 TiO2-SiO2 Inorganic materials 0.000 description 1
- 230000002350 accommodative effect Effects 0.000 description 1
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 230000001976 improved effect Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008093 supporting effect Effects 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- YUOWTJMRMWQJDA-UHFFFAOYSA-J tin(iv) fluoride Chemical compound [F-].[F-].[F-].[F-].[Sn+4] YUOWTJMRMWQJDA-UHFFFAOYSA-J 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B41/00—Circuit arrangements or apparatus for igniting or operating discharge lamps
- H05B41/14—Circuit arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J65/00—Lamps without any electrode inside the vessel; Lamps with at least one main electrode outside the vessel
- H01J65/04—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels
- H01J65/042—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels by an external electromagnetic field
- H01J65/048—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels by an external electromagnetic field the field being produced by using an excitation coil
Definitions
- the invention relates to light-emitting devices, and in particular to light-emitting devices utilizing gaseous sulfur compounds, wherein a discharge chamber is provided with no plasma-media contacting electrodes built inside the chamber.
- an incandescent lamp using radiation associated with a burning filament e.g., an incandescent lamp using radiation associated with a burning filament, a fluorescent lamp composed of an electric discharge tube and a fluorescent-powder coating for energy conversion, a high-intensity-discharge (HID) lamp that induces electrical discharge within a highly-pressurized gas or steam, and an electrodeless plasma lighting system (PLS) lamp that generates lighting plasma of gaseous media with no media-contacting electrodes.
- HID high-intensity-discharge
- PLS electrodeless plasma lighting system
- incandescent lamps are excellent in color rendition and small in size. Switching circuits of the incandescent lamps are simple and low cost. However, compared to other lamps, incandescent lamps are less power efficient and have a shorter life span. In the other end, fluorescent lamps are more power efficient in emitting light and more durable than other lamps. However, while compared with incandescent lamps, fluorescent lamps are relatively large in size. Additionally, fluorescent lamps require also additional power-ballasting circuits to stabilize discharge current and light output thereof. Other gas-discharge lamps like HID lamps are also power efficient and durable. The HID lamps require, however, a relatively long time for restriking on upon switching off.
- HID lamps similar to fluorescent lamps, requires additional power-ballasting circuits to assist switching.
- Electrodeless PLS lamps possess longest life among all the above-noted lamps. The electrodeless PLS lamps though are acceptably efficient in emitting light but relatively much expensive. The electrodeless PLS lamps require also additional power-ballasting (though similar but more complex) circuits for switching.
- Electroless sulfur lamp is particularly efficient in emitting white light of broadband spectrum even closely resembling to natural sun light.
- the electrodeless sulfur lamps disclosed in the above noted US patents consist of a of golf-ball sized quartz bulb containing ten to hundred milligrams of sulfur powers and argon gas at an end of a spindle for rotation.
- the bulb absorbs microwave energy of 2.45 GHz generated from a magnetron to excite buffering gas of low pressure argon therein and generates gaseous discharging plasma.
- the space within the quartz bulb is thus supplied with an appropriate amount of free electrons.
- the sulfur powers absorb the microwave energy to heat and vaporize itself, thereby raising the pressure inside the quartz bulb to 5 ⁇ 10 times that of the surrounding atmosphere.
- the gaseous sulfur vapors elevate to a temperature in the quartz bulb under the continuous reaction with microwaves and plasmas of inert buffering gas and are thus stimulated to ionize and discharge.
- the sulfur ions vigorously oscillate within the space of a narrow mean free path and collapse within itself, thereby causing a molecular-type charge/discharge process, such a process is further aggravated by excitation and collision with highly energetic gas ions in the buffering gas plasma, thereby forming additional luminous thermal plasma of new media and emitting great amounts of photons, having a spectrum of about 73% of visible light, resembling to that of sunlight.
- the electrodeless sulfur lamps disclosed in the above noted US patents need a power source of more than 1.5 KW to reach a luminous efficiency of about 100 lumens per watt. As a result its application is confined to illuminate only large public spaces.
- the electrodeless sulfur lamps disclosed by the above noted US patents are normally large in size and appropriate means of electromagnetic shielding in most cases are mandatory, particularly for indoor applications. Therefore, the electrodeless sulfur lamps disclosed by the above noted US patents are not suitable for low power or planar luminance applications.
- a light-emitting device utilizing gaseous sulfur compounds is provided for low power or planar luminance applications.
- An exemplary light-emitting device utilizing gaseous sulfur compounds comprises a first substrate with an energy transmission coil disposed thereover.
- a dielectric barrier layer is formed over the first substrate to cover the energy transmission coil.
- a sealant wall circles around the dielectric barrier layer.
- a second substrate is disposed against the first substrate and supported by the sealant wall, thereby defining an inner chamber between the first and second substrates, wherein the second substrate is a transparent substrate.
- a gaseous reactant is filled in the inner chamber, wherein the gaseous reactant comprises an inert gas and a sulfur-containing gas.
- a high-frequency oscillating power supply is coupled to the energy transmission coil, thereby allowing the energy transmission coil to induce an electromagnetic field into the inner chamber for lighting up the light-emitting device.
- FIG. 1 is a schematic diagram showing a top view of a light-emitting device according to an embodiment of the invention
- FIG. 2 shows a cross section taken along line 2 - 2 in FIG. 1 ;
- FIG. 3 is a schematic diagram showing a top view of an energy transmission coil according to an embodiment of the invention.
- FIG. 4 is a schematic diagram showing a cross section of a light-emitting device according to another embodiment of the invention.
- FIGS. 5-10 are schematic diagrams showing top views of an energy transmission coil in various embodiments of the invention, respectively.
- FIG. 1 is a schematic diagram showing a top view of an exemplary light-emitting device 100 .
- the light-emitting device 100 comprises a substrate 102 , an energy transmission coil (illustrated as two electrically isolated electrodes 106 and 108 ) disposed over the substrate 102 , a dielectric barrier layer 112 disposed over the substrate 102 and embedding the energy transmission coil, a sealant wall 110 which circles around the dielectric barrier layer 112 over the substrate 102 , and a high-frequency oscillating power supply 200 .
- An impedance matching circuit 300 may be optionally provided between the energy transmission coil and the high-frequency oscillating power supply 200 to improve energy transmission efficiency.
- FIG. 1 illustrates the substrates 102 and 104 as substantially rectangular shape from a top view.
- the substrates 102 and 104 can be configured into, for examples, other orthogonal geometries or a substantially circular shape from a top view.
- FIG. 2 shows a cross section taken along line 2 - 2 of the light-emitting device 100 in FIG. 1 .
- the substrate 104 and the substrate 102 are assembled together with a sealant wall 110 which thereby defines an inner chamber 114 there in between.
- the substrate 104 is a transparent substrate and the material thereof can be, for example, quartz, borosilicate, or translucent alumina which transmits visible light.
- the substrate 104 is formed with a thickness of about 1.5 ⁇ 5.0 mm.
- the substrate 102 is an electrically-insulative substrate and material thereof can be, for example, quartz, glass, or ceramic.
- a gaseous reactant 150 is filled for purposed as media of lighting plasma.
- the gaseous reactant 150 is a mixture comprising of at least a buffer gas and a sulfur-containing gas.
- the buffer gas can be, for example, inert gases such as He, Ne, Ar, Kr, Xe, Rn, or combinations thereof.
- the sulfur-containing gases can be, for example, SF 4 or SF 6 .
- the buffer gas may be formed with only one kind of inert gas or ideally a combination of at least two kinds of inert gases.
- a blending of more than one inert gases is for example combining Ar or Kr taken from a group of higher molecular weight with He or Ne taken from another group of low molecular weight.
- a plasma can be easily ignited at low power by an inert gas of lower molecule weight (M.W.) to rapidly reach enough free electron density at starting stage.
- inert gas having high M.W. may supply energetic ions having high momentum to continuously strike the sulfur-containing gas which is relatively immobile, and by such an action to knock fluorine ions out of the sulfur-containing gas.
- the released active fluorine ions may then recombine with ions of the inert gas of high M.W. to temporarily produce metastable fluoride such as ArF or KrF.
- Such a decomposing/regeneration process gradually brings forth sulfur ions out of the plasma atmosphere.
- the buffer gas and the sulfur-containing gas in the gaseous reactant 150 are blended with a mix ratio of about 100:0.1 ⁇ 2:1.
- the weighting of the inert gas having high M.W. in the buffer gas should be adjusted according to the proportioning of sulfur-containing gas in order to completely consume the fluorine ions released during the above noted decomposing/regenerating process.
- the inner chamber 114 is preferably sustained at a pressure of about 0.01 ⁇ 1 atm.
- the electrodes 106 and 108 disposed over the substrate 102 constitutes an energy transmission coil which is connected to the high frequency oscillating power supply 200 (See FIG. 1 ).
- the high frequency oscillating power supply 200 may be, for example, an acoustic frequency oscillator, a radio frequency (RF) oscillator, or a microwave frequency oscillator.
- An impedance matching circuit 300 may be optionally provided between the electrodes ( 106 and 108 ) and the high-frequency oscillating power supply 200 to improve energy transmission efficiency.
- the impendence matching circuit 300 matches impendence between the high-frequency oscillating power supply 200 and loadings inferred from the electrodes 106 and 108 .
- the energy transmission coil could then be supplied with electro-magnetic power of pulses having a frequency of about 1 KHz ⁇ 20 MHz, or more preferably of about 5 KHz ⁇ 2 MHz.
- the electromagnetic pulses so provided can be either in DC or AC pulses.
- Such a powering up generates capacitively coupling effects, as forming a local electrical field within the inner chamber 114 to excite the gaseous reactant therein and cause charging/discharging process cycles which result in the emitting of light 180 .
- the dielectric barrier layer 112 embedding the electrodes 106 and 108 must be transmissive to the electromagnetic field having a frequency between 1 KHz ⁇ 20 MHz supplied from the high-frequency oscillating power supply 200 .
- the dielectric barrier layer 112 is made out of hybrid compounds by mixing inorganic dielectric powders such as silicon dioxide, barium titanate, aluminum oxide, titanium dioxide, magnesium oxide, or glass, with an organic binder such as silicon resin, epoxy resin, acrylic resin, PU resin or furan resin, etc.
- the dielectric barrier layer 112 is deposited on the substrate 102 by first screen printing of a raw-mixture paste and later applying high temperature baking to burn off the binder as causing particle sintering to form a continuous thick film which buries the energy transmission coil (displayed as electrodes 106 and 108 ) underneath.
- the sealant wall 110 may be made out of hybrid compounds by mixing inorganic powders such as silicon dioxide, magnesium oxide, aluminum oxide, silica gel or glass with an organic binder such as silicon resin, epoxy resin, acrylic resin, PU resin or furan resin, etc.
- the sealant wall 110 is formed by first screen-printing or casting, or dispensing a raw mixture pastes on the substrate 102 and later applying high temperature baking to burn off the binder as causing particle sintering to form a continuous and airtight sealing support between the substrates 102 and 104 .
- the dielectric barrier layer 112 , the sealant wall 110 and the substrate 102 must have close thermal expansion characteristics to avoid undesired deformation which might otherwise result in bending or leakage, while operating the light-emitting device 100 .
- an optional light reflection layer 115 and/or a secondary-electron emitting layer 116 can be sequentially deposited over the top of the dielectric barrier layer 124 as directly meeting with the gaseous reactant 150 to direct illumination and to improve power utilization efficiency.
- the light reflection layer 115 may be made from simple metal oxides such as titanium dioxide (TiO 2 ) or from a multi-layered dichroic coating, which utilizes interference of light via media of contrast refraction, such as TiO 2 —SiO 2 to redirect out-scattered light for illumination.
- the secondary-electron emitting layer 116 may be made from aluminum oxide or magnesium oxide to purposely increase electron density and lighting plasma intensity of the light-emitting device 100 .
- Individual thicknesses of the light reflection layer 115 or the secondary electron emitting layer 116 is preferably no more than 1 ⁇ m. Similar to the dielectric barrier layer 112 , the above supplementary layers ( 115 and 116 ) must also be transmissive to the input electromagnetic wave from the high-frequency oscillating power supply 200 for excitation of the gaseous reactants 150 to form lighting plasma.
- a possible reaction mechanism of the light-emitting device 100 as shown in FIGS. 1 and 2 is described as follows. Inside the inner chamber 114 , the energy transmission coil is biased to first excite the inert gas with relatively low molecular weight (M.W) to form a starting plasma thereof which rapidly raises the free electron density in the plasma to a sufficient level. Meanwhile upon excited within the plasma atmosphere, another inert-gas ingredient of relatively high M.W. may subsequently supply energetic ions having high momentum to continuously strike the sulfur-containing gas which is relatively immobile. And by such an action it causes decomposition to occur which allows free fluorine atoms or ions to escape from the sulfur-containing gas molecules.
- M.W molecular weight
- the light-emitting device 100 of this invention does not waste energy for phase exchange or intentionally raise temperature to trigger the three-body collision process. Therefore, operating temperature in the light emitting device 100 is greatly reduced as achieving a non-thermally equivalent plasma lighting at a low pressure.
- FIG. 3 is a schematic drawing showing a top view of the electrodes 106 and 108 which constitutes the energy transmission coil.
- the electrodes 106 and 108 are electrically isolated two ends of opposite polarity.
- the electrodes 106 and 108 are configured as an interconnecting comb-like pattern when viewed from a top view.
- the electrodes 106 and 108 can be make from conductive metals such as copper foil or sintered thick films of pastes containing conductive particles such as silver, palladium or transparent conductive oxides such as indium tin oxide (ITO).
- Each segment of electrodes 106 and 108 may be formed with a line width W of about 0.1 ⁇ 5 mm and a pitch P of about 0.05 ⁇ 25 mm there in between.
- the energy transmission coil is illustrated as a power conducting device disposed over the substrate 102 and protruding thereof. But it is not limited to only such a configuration.
- the energy transmission coil can also be embedded within the substrate 102 . Such a buried configuration may improve flatness of composing elements and ease to integrate the light-emitting device 100 for particular applications such as in flat panel displays or projectors.
- a shorter pitch P may be applied as to effectively increase local electrical-field strength between the two electrodes 106 and 108 .
- Such an arrangement is beneficial in promoting the excitation and stability of the plasma.
- the short-pitched electrodes are also accommodative to be buried under a thin dielectric barrier layer 112 , as illustrated in FIG. 2 , by means of sequential screen printing to form a structure of dielectric barrier discharge (DBD).
- DBD dielectric barrier discharge
- a critical voltage for igniting the plasma and power consumption can be greatly reduced.
- the high electrical field suitable for excitation is just above a top surface of the electrodes of the energy transmission coil, the plasma so formed is non-diffusive but constricted within a local neighborhood between the electrodes.
- the space height L for filling the gaseous reactants 150 can be shortened to even below 1 mm. Consequently, the overall thickness of the light-emitting device 100 can be reduced by applying a tabular sealant wall 110 of a small aspect ratio.
- Such a configuration greatly simplify supporting and sealing process for a planar vacuum device of a large area.
- Electrodes 106 and 108 of the energy transmission coil in the light emitting device 100 are not limited by the coplanar interconnecting comb-like configuration as illustrated in FIG. 3 .
- FIG. 4 is a schematic drawing showing the electrodes 106 and 108 disposed on different substrates, respectively.
- the electrodes 106 and 108 are disposed on the substrates 104 and 102 and are embedded under the dielectric barrier layers 112 a and 112 b , respectively.
- a gaseous reactant 150 is filled within an inner chamber defined between the dielectric barrier layers 112 a and 112 b .
- a lower structure comprising the dielectric barrier layer 112 a and the electrode 180 is similar to that disclosed in the previous embodiment shown in FIG. 3 .
- An upper structure comprising electrode 106 and the dielectric barrier layer 112 b must, however, be made with light transparent materials.
- the electrode 106 may be made from transparent conductive materials such as tin oxide, indium oxide, zinc oxide, or tin fluoride, etc.
- the dielectric barrier layer 112 b in the other end, may be made from transparent insulative materials such as silicon resin, glass, acrylic resin, or epoxy resin, etc.
- the arrangement of the electrodes 106 and 108 on different substrates can be configured as an interconnecting comb on two different planes as illustrated in FIG. 4 .
- the electrodes 106 and 108 are embedded by different dielectric barrier layers 112 a and 112 b , respectively.
- the electrodes 106 and 108 may also be arranged in other configuration (not shown) such as positioned the two electrodes in a same orientation with no horizontal displacement, or in a perpendicular manner like a chessboard when viewed from a top view.
- the electrodes can be so configured as interconnecting fingers or grids for a proper capacitively coupling of input energy for excitation of gas plasma where the intensity of an induced electrical field varies with vertical distance L in space filled with the gaseous reactants 150 .
- the energy transmission coil in the light emitting device 100 is not limited only to configurations for achieving capacitively coupling effects of input energy as described above.
- the energy transmission coil may also be configured for obtaining an inductively coupling effect of input energy using a single continuous electrode 109 such as those shown in FIG. 5-10 .
- the electrode 109 of the energy transmission coil in the light emitting device 100 is configured as other shapes such as a substantially rectangular helix loop (See FIG. 5 ), a substantially circular helix loop (See FIG. 6 ), a U-shaped line (See FIG. 7 ), a meander (serpentine) line (See FIG. 8 ), a S-shaped line (See FIG. 9 ) or even multiplexed parallel lines (See FIG. 10 . All such are capable of inducing inductively coupling effects for a lighting plasma.
- the light-emitting device 100 has a high luminous efficacy and a color rendition that resembles sunlight.
- the light-emitting device 100 shows a wavelength distribution better match with the luminious sensitity equivalence of human eyes than most of conventional fluorescent lamps does. Since the light-emitting device of current invention may directly emit visible white light, there is no need to coat fluorescent conversion materials on the chamber wall of the inner chamber 114 or to use environmentally hazardous mercury material.
- the light-emitting device 100 also shows a minimal aging characteristics over the life span thereof in both color and brightness of the emitted light.
- planar lighting sources with high energy efficiency may be fabricated using the light-emitting device 100 of the invention adopting high efficient luminous discharge of sulfur molecules.
- the light-emitting device 100 of the invention incorporates a planar energy transmission coil to provide capacitively-coupled electrical fields for a powerful excitation.
- a planar energy transmission coil to provide capacitively-coupled electrical fields for a powerful excitation.
- the light emitting device 100 may also take advantages of metastable products formed by the recombination of liberated fluorine ions with the ions of the inert buffer gases (e.g. Ar or Kr) to modulate the colors of emitted light.
- a metastable product like KrF radiates a UV light peaking at a wavelength of about 249 nm which is so close to the 254 nm from mercury used in common fluorescent lamps. Therefore, traditional tri-chromatic (RGB) rare-earth-doped phosphors may be applied extensively to modify the spectrum of light output thereof without need of using mercury.
- RGB tri-chromatic
- the UV-to-visible converting fluorescent layer 118 which adopts traditional rare-earth doped phosphors may converts UV radiation from intermediate products (ArF or KrF) in the plasma into visible light by taking advantage of its similar UV emission peak as from mercury in most fluorescent lamps.
- the light-emitting device 100 of the invention is thus applicable in applications such as concentrated type or planar type lighting sources.
- the light emitting device 100 of the invention as a planar lighting source in a backlight module, no diffusion plates or brightness enhancing films would be required as normally necessary while using conventional tubular CCFL as light-emitting source. Therefore, fabrication costs could be decreased, while increasing luminous efficacy and power utilization efficiency of the backlight module.
- the light-emitting device 100 of the invention can served as an alternative which directly emits visible light using no wavelength converting fluorescent materials as commonly adopted in conventional cold cathode fluorescent lighting (CCFL) or in flat FED displays.
- CCFL cold cathode fluorescent lighting
- the energy input to the light-emitting device 100 of the invention is directly converted into visible white light with no other middle stages for adjusting wavelength.
- the light-emitting device 100 of the invention can be further improved by adding peripheral electromagnetic shields (not shown) or other complementary components outside of the substrates 102 and 104 to enrich functionality of the light emitting device 100 .
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Discharge Lamps And Accessories Thereof (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
Description
- This Application claims priority of Taiwan Patent Application No. 97144474, filed on Nov. 18, 2008, the entirety of which is incorporated by reference herein.
- 1. Field of the Invention
- The invention relates to light-emitting devices, and in particular to light-emitting devices utilizing gaseous sulfur compounds, wherein a discharge chamber is provided with no plasma-media contacting electrodes built inside the chamber.
- 2. Description of the Related Art
- There are various types of lighting sources, e.g., an incandescent lamp using radiation associated with a burning filament, a fluorescent lamp composed of an electric discharge tube and a fluorescent-powder coating for energy conversion, a high-intensity-discharge (HID) lamp that induces electrical discharge within a highly-pressurized gas or steam, and an electrodeless plasma lighting system (PLS) lamp that generates lighting plasma of gaseous media with no media-contacting electrodes.
- The various types of lamps have their respective advantages. For example, incandescent lamps are excellent in color rendition and small in size. Switching circuits of the incandescent lamps are simple and low cost. However, compared to other lamps, incandescent lamps are less power efficient and have a shorter life span. In the other end, fluorescent lamps are more power efficient in emitting light and more durable than other lamps. However, while compared with incandescent lamps, fluorescent lamps are relatively large in size. Additionally, fluorescent lamps require also additional power-ballasting circuits to stabilize discharge current and light output thereof. Other gas-discharge lamps like HID lamps are also power efficient and durable. The HID lamps require, however, a relatively long time for restriking on upon switching off. In addition, HID lamps, similar to fluorescent lamps, requires additional power-ballasting circuits to assist switching. Electrodeless PLS lamps possess longest life among all the above-noted lamps. The electrodeless PLS lamps though are acceptably efficient in emitting light but relatively much expensive. The electrodeless PLS lamps require also additional power-ballasting (though similar but more complex) circuits for switching.
- One type of electrodeless PLS lamps, called electrodeless sulfur lamp, is particularly efficient in emitting white light of broadband spectrum even closely resembling to natural sun light.
- U.S. Pat. Nos. 5,404,076, 5,594,303, 5,847,517 and 5,757,130, issued to Fusion System Corporation, discloses an electrodeless sulfur lamp.
- The electrodeless sulfur lamps disclosed in the above noted US patents consist of a of golf-ball sized quartz bulb containing ten to hundred milligrams of sulfur powers and argon gas at an end of a spindle for rotation. The bulb absorbs microwave energy of 2.45 GHz generated from a magnetron to excite buffering gas of low pressure argon therein and generates gaseous discharging plasma. As a consequent, the space within the quartz bulb is thus supplied with an appropriate amount of free electrons. The sulfur powers absorb the microwave energy to heat and vaporize itself, thereby raising the pressure inside the quartz bulb to 5˜10 times that of the surrounding atmosphere. The gaseous sulfur vapors elevate to a temperature in the quartz bulb under the continuous reaction with microwaves and plasmas of inert buffering gas and are thus stimulated to ionize and discharge. The sulfur ions vigorously oscillate within the space of a narrow mean free path and collapse within itself, thereby causing a molecular-type charge/discharge process, such a process is further aggravated by excitation and collision with highly energetic gas ions in the buffering gas plasma, thereby forming additional luminous thermal plasma of new media and emitting great amounts of photons, having a spectrum of about 73% of visible light, resembling to that of sunlight.
- Nevertheless, the electrodeless sulfur lamps disclosed in the above noted US patents need a power source of more than 1.5 KW to reach a luminous efficiency of about 100 lumens per watt. As a result its application is confined to illuminate only large public spaces. In addition, the electrodeless sulfur lamps disclosed by the above noted US patents are normally large in size and appropriate means of electromagnetic shielding in most cases are mandatory, particularly for indoor applications. Therefore, the electrodeless sulfur lamps disclosed by the above noted US patents are not suitable for low power or planar luminance applications.
- Thus, a light-emitting device utilizing gaseous sulfur compounds is provided for low power or planar luminance applications.
- An exemplary light-emitting device utilizing gaseous sulfur compounds comprises a first substrate with an energy transmission coil disposed thereover. A dielectric barrier layer is formed over the first substrate to cover the energy transmission coil. A sealant wall circles around the dielectric barrier layer. A second substrate is disposed against the first substrate and supported by the sealant wall, thereby defining an inner chamber between the first and second substrates, wherein the second substrate is a transparent substrate. A gaseous reactant is filled in the inner chamber, wherein the gaseous reactant comprises an inert gas and a sulfur-containing gas. A high-frequency oscillating power supply is coupled to the energy transmission coil, thereby allowing the energy transmission coil to induce an electromagnetic field into the inner chamber for lighting up the light-emitting device.
- A detailed description is given in the following embodiments with reference to the accompanying drawings.
- The invention can be more fully understood by reading the subsequent detailed description and examples with references made to the accompanying drawings, wherein:
-
FIG. 1 is a schematic diagram showing a top view of a light-emitting device according to an embodiment of the invention; -
FIG. 2 shows a cross section taken along line 2-2 inFIG. 1 ; -
FIG. 3 is a schematic diagram showing a top view of an energy transmission coil according to an embodiment of the invention; -
FIG. 4 is a schematic diagram showing a cross section of a light-emitting device according to another embodiment of the invention; and -
FIGS. 5-10 are schematic diagrams showing top views of an energy transmission coil in various embodiments of the invention, respectively. - The following description is of the best-contemplated mode of carrying out the invention. This description is made for the purpose of illustrating the general principles of the invention and should not be taken in a limiting sense. The scope of the invention is best determined by reference to the appended claims.
-
FIG. 1 is a schematic diagram showing a top view of an exemplary light-emitting device 100. As shown inFIG. 1 , the light-emitting device 100 comprises asubstrate 102, an energy transmission coil (illustrated as two electrically isolatedelectrodes 106 and 108) disposed over thesubstrate 102, adielectric barrier layer 112 disposed over thesubstrate 102 and embedding the energy transmission coil, asealant wall 110 which circles around thedielectric barrier layer 112 over thesubstrate 102, and a high-frequency oscillatingpower supply 200. An impedance matchingcircuit 300 may be optionally provided between the energy transmission coil and the high-frequency oscillatingpower supply 200 to improve energy transmission efficiency. Theelectrodes circuit 300 to receive power transmission from the high-frequency oscillatingpower supply 200.FIG. 1 illustrates thesubstrates substrates substrates -
FIG. 2 shows a cross section taken along line 2-2 of the light-emitting device 100 inFIG. 1 . As shown inFIG. 2 , thesubstrate 104 and thesubstrate 102 are assembled together with asealant wall 110 which thereby defines aninner chamber 114 there in between. Thesubstrate 104 is a transparent substrate and the material thereof can be, for example, quartz, borosilicate, or translucent alumina which transmits visible light. Thesubstrate 104 is formed with a thickness of about 1.5˜5.0 mm. On the other end, thesubstrate 102 is an electrically-insulative substrate and material thereof can be, for example, quartz, glass, or ceramic. In theinner chamber 114 defined between these two substrates (102 and 104), agaseous reactant 150 is filled for purposed as media of lighting plasma. Thegaseous reactant 150 is a mixture comprising of at least a buffer gas and a sulfur-containing gas. The buffer gas can be, for example, inert gases such as He, Ne, Ar, Kr, Xe, Rn, or combinations thereof. And the sulfur-containing gases can be, for example, SF4 or SF6. The buffer gas may be formed with only one kind of inert gas or ideally a combination of at least two kinds of inert gases. A blending of more than one inert gases is for example combining Ar or Kr taken from a group of higher molecular weight with He or Ne taken from another group of low molecular weight. A plasma can be easily ignited at low power by an inert gas of lower molecule weight (M.W.) to rapidly reach enough free electron density at starting stage. Meanwhile upon excited within the plasma atmosphere, inert gas having high M.W. may supply energetic ions having high momentum to continuously strike the sulfur-containing gas which is relatively immobile, and by such an action to knock fluorine ions out of the sulfur-containing gas. The released active fluorine ions may then recombine with ions of the inert gas of high M.W. to temporarily produce metastable fluoride such as ArF or KrF. Such a decomposing/regeneration process gradually brings forth sulfur ions out of the plasma atmosphere. The buffer gas and the sulfur-containing gas in thegaseous reactant 150 are blended with a mix ratio of about 100:0.1˜2:1. The weighting of the inert gas having high M.W. in the buffer gas should be adjusted according to the proportioning of sulfur-containing gas in order to completely consume the fluorine ions released during the above noted decomposing/regenerating process. Theinner chamber 114 is preferably sustained at a pressure of about 0.01˜1 atm. - Still referring to
FIG. 2 , theelectrodes substrate 102 constitutes an energy transmission coil which is connected to the high frequency oscillating power supply 200 (SeeFIG. 1 ). The high frequency oscillatingpower supply 200 may be, for example, an acoustic frequency oscillator, a radio frequency (RF) oscillator, or a microwave frequency oscillator. Animpedance matching circuit 300 may be optionally provided between the electrodes (106 and 108) and the high-frequencyoscillating power supply 200 to improve energy transmission efficiency. Theimpendence matching circuit 300 matches impendence between the high-frequencyoscillating power supply 200 and loadings inferred from theelectrodes inner chamber 114 to excite the gaseous reactant therein and cause charging/discharging process cycles which result in the emitting oflight 180. Herein, thedielectric barrier layer 112 embedding theelectrodes oscillating power supply 200. Thedielectric barrier layer 112 is made out of hybrid compounds by mixing inorganic dielectric powders such as silicon dioxide, barium titanate, aluminum oxide, titanium dioxide, magnesium oxide, or glass, with an organic binder such as silicon resin, epoxy resin, acrylic resin, PU resin or furan resin, etc. Thedielectric barrier layer 112 is deposited on thesubstrate 102 by first screen printing of a raw-mixture paste and later applying high temperature baking to burn off the binder as causing particle sintering to form a continuous thick film which buries the energy transmission coil (displayed aselectrodes 106 and 108) underneath. Similar to thedielectric barrier layer 112, thesealant wall 110 may be made out of hybrid compounds by mixing inorganic powders such as silicon dioxide, magnesium oxide, aluminum oxide, silica gel or glass with an organic binder such as silicon resin, epoxy resin, acrylic resin, PU resin or furan resin, etc. Thesealant wall 110 is formed by first screen-printing or casting, or dispensing a raw mixture pastes on thesubstrate 102 and later applying high temperature baking to burn off the binder as causing particle sintering to form a continuous and airtight sealing support between thesubstrates dielectric barrier layer 112, thesealant wall 110 and thesubstrate 102 must have close thermal expansion characteristics to avoid undesired deformation which might otherwise result in bending or leakage, while operating the light-emittingdevice 100. - In addition, an optional
light reflection layer 115 and/or a secondary-electron emitting layer 116 can be sequentially deposited over the top of the dielectric barrier layer 124 as directly meeting with thegaseous reactant 150 to direct illumination and to improve power utilization efficiency. Thelight reflection layer 115 may be made from simple metal oxides such as titanium dioxide (TiO2) or from a multi-layered dichroic coating, which utilizes interference of light via media of contrast refraction, such as TiO2—SiO2 to redirect out-scattered light for illumination. The secondary-electron emitting layer 116 may be made from aluminum oxide or magnesium oxide to purposely increase electron density and lighting plasma intensity of the light-emittingdevice 100. Individual thicknesses of thelight reflection layer 115 or the secondaryelectron emitting layer 116 is preferably no more than 1 μm. Similar to thedielectric barrier layer 112, the above supplementary layers (115 and 116) must also be transmissive to the input electromagnetic wave from the high-frequencyoscillating power supply 200 for excitation of thegaseous reactants 150 to form lighting plasma. - A possible reaction mechanism of the light-emitting
device 100 as shown inFIGS. 1 and 2 is described as follows. Inside theinner chamber 114, the energy transmission coil is biased to first excite the inert gas with relatively low molecular weight (M.W) to form a starting plasma thereof which rapidly raises the free electron density in the plasma to a sufficient level. Meanwhile upon excited within the plasma atmosphere, another inert-gas ingredient of relatively high M.W. may subsequently supply energetic ions having high momentum to continuously strike the sulfur-containing gas which is relatively immobile. And by such an action it causes decomposition to occur which allows free fluorine atoms or ions to escape from the sulfur-containing gas molecules. Consequently such frequent and vigorous collisions produces various charged molecules such as SF5 +, SF4 +, SF2 + or SF+ as products in sequence of progressive stages. The released active fluorine ions (negatively charged) may then recombine with positively charged ions of the inert gas of high M.W. to temporarily produce metastable fluoride such as ArF or KrF. Such a decomposing/regenerating process gradually brings forth sulfur ions out of the plasma atmosphere. Since the molecular weight of the sulfur containing reactant is reduced due to the decomposition and liberation of the fluorine ions, vigorous oscillation of the resulting free sulfur ions thus become possible in response to the electromagnetic field just like ions of other inert gases. Excited by a electromagnetic wave of suitable frequency (e.g., 1 KHz˜1 MHz) and vigorously self-vibrated within space of narrow mean free path, the free sulfur ions with high momentum would frequently collide with other free sulfur ions and recombine into another multi-atomic molecular species. Such a three-body collision of atoms, ions, and electrons eventually forms charged diatomic sulfur radicals in an metastable and/or excited state. These ionization and recombination process cycles continuously increases in intensity and releases great amounts of photons which emitlight 180. High luminous efficacy is achieved as greater than 73% oflight 180 is located within the visible range. Unlike traditional sulfur lamp which use solid-state sulfur powder as discharge media requiring preheating to vaporize, the light-emittingdevice 100 of this invention does not waste energy for phase exchange or intentionally raise temperature to trigger the three-body collision process. Therefore, operating temperature in thelight emitting device 100 is greatly reduced as achieving a non-thermally equivalent plasma lighting at a low pressure. -
FIG. 3 is a schematic drawing showing a top view of theelectrodes electrodes electrodes electrodes electrodes terminal 130 of theelectrode 106 and aterminal 140 of theelectrode 108 are connected onto output terminals (not shown) of the high-frequency oscillating power supply 200 (not shown). Herein, the energy transmission coil is illustrated as a power conducting device disposed over thesubstrate 102 and protruding thereof. But it is not limited to only such a configuration. For example, the energy transmission coil can also be embedded within thesubstrate 102. Such a buried configuration may improve flatness of composing elements and ease to integrate the light-emittingdevice 100 for particular applications such as in flat panel displays or projectors. - Moreover, to overcome the high dielectric strength before breakdown of the sulfur-containing reactant, a shorter pitch P may be applied as to effectively increase local electrical-field strength between the two
electrodes dielectric barrier layer 112, as illustrated inFIG. 2 , by means of sequential screen printing to form a structure of dielectric barrier discharge (DBD). By such, thegaseous reactant 150 in the inner chamber would be most effectively excited by the energetic electrons without causing arcing or streaming within a local region of relatively high electrical field which is located just above the embedded electrodes under the thindielectric barrier 112. And a critical voltage for igniting the plasma and power consumption can be greatly reduced. In addition, since the high electrical field suitable for excitation is just above a top surface of the electrodes of the energy transmission coil, the plasma so formed is non-diffusive but constricted within a local neighborhood between the electrodes. Thus the space height L for filling thegaseous reactants 150 can be shortened to even below 1 mm. Consequently, the overall thickness of the light-emittingdevice 100 can be reduced by applying atabular sealant wall 110 of a small aspect ratio. Such a configuration greatly simplify supporting and sealing process for a planar vacuum device of a large area. - Arrangement of the
electrodes light emitting device 100 are not limited by the coplanar interconnecting comb-like configuration as illustrated inFIG. 3 . -
FIG. 4 is a schematic drawing showing theelectrodes FIG. 4 , theelectrodes substrates gaseous reactant 150 is filled within an inner chamber defined between the dielectric barrier layers 112 a and 112 b. In this embodiment, a lower structure comprising thedielectric barrier layer 112 a and theelectrode 180 is similar to that disclosed in the previous embodiment shown inFIG. 3 . An upperstructure comprising electrode 106 and thedielectric barrier layer 112 b must, however, be made with light transparent materials. Theelectrode 106 may be made from transparent conductive materials such as tin oxide, indium oxide, zinc oxide, or tin fluoride, etc. Thedielectric barrier layer 112 b, in the other end, may be made from transparent insulative materials such as silicon resin, glass, acrylic resin, or epoxy resin, etc. - The arrangement of the
electrodes FIG. 4 . Herein theelectrodes electrodes gaseous reactants 150. - Moreover, the energy transmission coil in the
light emitting device 100 is not limited only to configurations for achieving capacitively coupling effects of input energy as described above. The energy transmission coil may also be configured for obtaining an inductively coupling effect of input energy using a singlecontinuous electrode 109 such as those shown inFIG. 5-10 . As shown inFIG. 5-10 , theelectrode 109 of the energy transmission coil in thelight emitting device 100 is configured as other shapes such as a substantially rectangular helix loop (SeeFIG. 5 ), a substantially circular helix loop (SeeFIG. 6 ), a U-shaped line (SeeFIG. 7 ), a meander (serpentine) line (SeeFIG. 8 ), a S-shaped line (SeeFIG. 9 ) or even multiplexed parallel lines (SeeFIG. 10 . All such are capable of inducing inductively coupling effects for a lighting plasma. - The light-emitting
device 100 has a high luminous efficacy and a color rendition that resembles sunlight. The light-emittingdevice 100 shows a wavelength distribution better match with the luminious sensitity equivalence of human eyes than most of conventional fluorescent lamps does. Since the light-emitting device of current invention may directly emit visible white light, there is no need to coat fluorescent conversion materials on the chamber wall of theinner chamber 114 or to use environmentally hazardous mercury material. The light-emittingdevice 100 also shows a minimal aging characteristics over the life span thereof in both color and brightness of the emitted light. - Thus, planar lighting sources with high energy efficiency may be fabricated using the light-emitting
device 100 of the invention adopting high efficient luminous discharge of sulfur molecules. The light-emittingdevice 100 of the invention incorporates a planar energy transmission coil to provide capacitively-coupled electrical fields for a powerful excitation. Besides, because there is no electrode contacting with thegaseous reactant 150 inside theinner chamber 114 in thelight emitting device 100, degradation of electrodes with plasma atmosphere is completely avoided. In addition, since theinner chamber 114 is fully sealed, no chemical contaminants could be formed therein during the plasma discharging process, thereby ensuring a durable life span and reliability thereof. - The
light emitting device 100 may also take advantages of metastable products formed by the recombination of liberated fluorine ions with the ions of the inert buffer gases (e.g. Ar or Kr) to modulate the colors of emitted light. For example upon excited, a metastable product like KrF radiates a UV light peaking at a wavelength of about 249 nm which is so close to the 254 nm from mercury used in common fluorescent lamps. Therefore, traditional tri-chromatic (RGB) rare-earth-doped phosphors may be applied extensively to modify the spectrum of light output thereof without need of using mercury. Such a UV-to-visible converting fluorescent layer 118 (as illustrated inFIG. 2 ) capable of enhancing brightness or modify color spectrum of the light output may be optionally deposited over an inner surface ofsubstrate 104 at location in close contact with thegaseous reactant 150 and its associated plasma. The UV-to-visible convertingfluorescent layer 118 which adopts traditional rare-earth doped phosphors may converts UV radiation from intermediate products (ArF or KrF) in the plasma into visible light by taking advantage of its similar UV emission peak as from mercury in most fluorescent lamps. - The light-emitting
device 100 of the invention is thus applicable in applications such as concentrated type or planar type lighting sources. For applied thelight emitting device 100 of the invention as a planar lighting source in a backlight module, no diffusion plates or brightness enhancing films would be required as normally necessary while using conventional tubular CCFL as light-emitting source. Therefore, fabrication costs could be decreased, while increasing luminous efficacy and power utilization efficiency of the backlight module. In addition, the light-emittingdevice 100 of the invention can served as an alternative which directly emits visible light using no wavelength converting fluorescent materials as commonly adopted in conventional cold cathode fluorescent lighting (CCFL) or in flat FED displays. Therefore unfavorable effects such as poor uniformity, aging of phosphors, instability and distortion of color, and erosion of electrodes commonly observed in conventional fluorescent lighting may then be prevented. The energy input to the light-emittingdevice 100 of the invention is directly converted into visible white light with no other middle stages for adjusting wavelength. The light-emittingdevice 100 of the invention can be further improved by adding peripheral electromagnetic shields (not shown) or other complementary components outside of thesubstrates light emitting device 100. - While the invention has been described by way of example and in terms of the preferred embodiments, it is to be understood that the invention is not limited to the disclosed embodiments. To the contrary, it is intended to cover various modifications and similar arrangements (as would be apparent to those skilled in the art). Therefore, the scope of the appended claims should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements.
Claims (25)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TWTW97144474 | 2008-11-18 | ||
TW097144474A TWI386970B (en) | 2008-11-18 | 2008-11-18 | Light-emitting device utilizing gaseous sulfur compounds |
TW97144474A | 2008-11-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
US20100123409A1 true US20100123409A1 (en) | 2010-05-20 |
US8110970B2 US8110970B2 (en) | 2012-02-07 |
Family
ID=42171461
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/611,887 Expired - Fee Related US8110970B2 (en) | 2008-11-18 | 2009-11-03 | Light-emitting devices utilizing gaseous sulfur compounds |
Country Status (2)
Country | Link |
---|---|
US (1) | US8110970B2 (en) |
TW (1) | TWI386970B (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130214664A1 (en) * | 2010-10-11 | 2013-08-22 | Lg Electronics Inc. | Vacuum insulation glass panel and refrigerator having the same |
US20140159003A1 (en) * | 2012-12-07 | 2014-06-12 | Lg Display Co., Ltd. | Organic light emitting diode display device and method of fabricating the same |
US20160358828A1 (en) * | 2014-02-18 | 2016-12-08 | Ngk Insulators, Ltd. | Handle Substrate of Composite Substrate for Semiconductor, and Composite Substrate for Semiconductor |
US20190320504A1 (en) * | 2018-04-12 | 2019-10-17 | Im Co., Ltd. | Heating device using hyper heat accelerator and method for manufacturing the same |
EP3076756B1 (en) * | 2015-03-30 | 2021-07-21 | OLEDWorks GmbH | Oled device and driving method |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10854794B2 (en) | 2017-12-20 | 2020-12-01 | Lumileds Llc | Monolithic LED array structure |
US10910433B2 (en) | 2018-12-31 | 2021-02-02 | Lumileds Llc | Pixelated LED array with optical elements |
CN109962130A (en) * | 2019-04-15 | 2019-07-02 | 扬州乾照光电有限公司 | A kind of the infrared LED chip and production method of the roughening of six faces |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4071798A (en) * | 1977-04-01 | 1978-01-31 | Xerox Corporation | Sodium vapor lamp with emission aperture |
US5072157A (en) * | 1988-09-02 | 1991-12-10 | Thorn Emi Plc | Excitation device suitable for exciting surface waves in a discharge tube |
US5404076A (en) * | 1990-10-25 | 1995-04-04 | Fusion Systems Corporation | Lamp including sulfur |
US5594303A (en) * | 1995-03-09 | 1997-01-14 | Fusion Lighting, Inc. | Apparatus for exciting an electrodeless lamp with an increasing electric field intensity |
US5757130A (en) * | 1990-10-25 | 1998-05-26 | Fusion Lighting, Inc. | Lamp with electrodes for increased longevity |
US5841244A (en) * | 1997-06-18 | 1998-11-24 | Northrop Grumman Corporation | RF coil/heat pipe for solid state light driver |
US5847517A (en) * | 1996-07-10 | 1998-12-08 | Fusion Lighting, Inc. | Method and apparatus for igniting electrodeless lamp with ferroelectric emission |
US5903091A (en) * | 1996-05-31 | 1999-05-11 | Fusion Lighting, Inc. | Lamp method and apparatus using multiple reflections |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1888710B1 (en) * | 2005-05-24 | 2011-11-23 | Seoul Semiconductor Co., Ltd. | Green phosphor of thiogallate, red phosphor of alkaline earth sulfide and white light emitting device thereof |
-
2008
- 2008-11-18 TW TW097144474A patent/TWI386970B/en not_active IP Right Cessation
-
2009
- 2009-11-03 US US12/611,887 patent/US8110970B2/en not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4071798A (en) * | 1977-04-01 | 1978-01-31 | Xerox Corporation | Sodium vapor lamp with emission aperture |
US5072157A (en) * | 1988-09-02 | 1991-12-10 | Thorn Emi Plc | Excitation device suitable for exciting surface waves in a discharge tube |
US5404076A (en) * | 1990-10-25 | 1995-04-04 | Fusion Systems Corporation | Lamp including sulfur |
US5757130A (en) * | 1990-10-25 | 1998-05-26 | Fusion Lighting, Inc. | Lamp with electrodes for increased longevity |
US5594303A (en) * | 1995-03-09 | 1997-01-14 | Fusion Lighting, Inc. | Apparatus for exciting an electrodeless lamp with an increasing electric field intensity |
US5903091A (en) * | 1996-05-31 | 1999-05-11 | Fusion Lighting, Inc. | Lamp method and apparatus using multiple reflections |
US5847517A (en) * | 1996-07-10 | 1998-12-08 | Fusion Lighting, Inc. | Method and apparatus for igniting electrodeless lamp with ferroelectric emission |
US5841244A (en) * | 1997-06-18 | 1998-11-24 | Northrop Grumman Corporation | RF coil/heat pipe for solid state light driver |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130214664A1 (en) * | 2010-10-11 | 2013-08-22 | Lg Electronics Inc. | Vacuum insulation glass panel and refrigerator having the same |
US20140159003A1 (en) * | 2012-12-07 | 2014-06-12 | Lg Display Co., Ltd. | Organic light emitting diode display device and method of fabricating the same |
US20160358828A1 (en) * | 2014-02-18 | 2016-12-08 | Ngk Insulators, Ltd. | Handle Substrate of Composite Substrate for Semiconductor, and Composite Substrate for Semiconductor |
JPWO2015125770A1 (en) * | 2014-02-18 | 2017-03-30 | 日本碍子株式会社 | Handle substrate for composite substrate for semiconductor and composite substrate for semiconductor |
US10204838B2 (en) * | 2014-02-18 | 2019-02-12 | Ngk Insulators, Ltd. | Handle substrate of composite substrate for semiconductor, and composite substrate for semiconductor |
EP3076756B1 (en) * | 2015-03-30 | 2021-07-21 | OLEDWorks GmbH | Oled device and driving method |
US20190320504A1 (en) * | 2018-04-12 | 2019-10-17 | Im Co., Ltd. | Heating device using hyper heat accelerator and method for manufacturing the same |
JP2019186180A (en) * | 2018-04-12 | 2019-10-24 | アイエム カンパニーリミテッドIm Co., Ltd. | Heating device using hyper heat accelerator and method for manufacturing the same |
CN110381617A (en) * | 2018-04-12 | 2019-10-25 | 爱铭有限公司 | Use the heating device and its manufacturing method of superthermal accelerator |
US11647568B2 (en) * | 2018-04-12 | 2023-05-09 | Im Advanced Materials Co., Ltd. | Heating device using hyper heat accelerator and method for manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
TW201021087A (en) | 2010-06-01 |
US8110970B2 (en) | 2012-02-07 |
TWI386970B (en) | 2013-02-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8110970B2 (en) | Light-emitting devices utilizing gaseous sulfur compounds | |
EP0521553B1 (en) | High-pressure glow discharge lamp | |
US7098598B2 (en) | Device for the backlighting of a liquid crystal display that includes at least one low-pressure gas discharge lamp | |
WO2002069367A2 (en) | Planar photoluminescent lamp | |
JP2007165319A (en) | Dielectric barrier discharge lamp | |
JP2002216704A (en) | Rare gas discharge lamp | |
US8102107B2 (en) | Light-emitting devices having excited sulfur medium by inductively-coupled electrons | |
JP2000311660A (en) | Gas discharge lamp | |
JP2002093367A5 (en) | ||
KR20010039909A (en) | Gas discharge lamp | |
JP4683549B2 (en) | External electrode discharge lamp | |
Hu et al. | Luminescence characteristics of mercury-free flat fluorescent lamp with arc-shape anodes | |
JP2001102004A (en) | Inert gas discharge lamp and the lighting apparatus | |
US20130057144A1 (en) | Fluorescent flat panel lamp for increased lumen output | |
KR100406780B1 (en) | Plane light generator | |
JPH06314561A (en) | Electric discharge lamp | |
JP3683200B2 (en) | Backlight for light emitting device and flat display | |
JP2001126670A (en) | Plane rare gas fluorescent lamp | |
JP2009164092A (en) | Piezoelectric oscillator for high-voltage lighting-up | |
JP2005538525A (en) | Low pressure gas discharge lamp comprising an electron emitter material similar to BaTiO3 | |
JP2002164022A (en) | Light emitting device and back light for plane display | |
JP2006092788A (en) | Discharge device having two-dimensional array with dielectric barrier, and lamp using it | |
JP2004234956A (en) | Two dimensional array type dielectric barrier discharge device | |
JPH08185824A (en) | Discharge lamp device and lighting system | |
JP2002008595A (en) | Discharge lamp, discharge lamp lighting device and illumination device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE,TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:HSIEH, HUNG-YUAN;REEL/FRAME:023473/0140 Effective date: 20091021 Owner name: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:HSIEH, HUNG-YUAN;REEL/FRAME:023473/0140 Effective date: 20091021 |
|
ZAAA | Notice of allowance and fees due |
Free format text: ORIGINAL CODE: NOA |
|
ZAAB | Notice of allowance mailed |
Free format text: ORIGINAL CODE: MN/=. |
|
ZAAA | Notice of allowance and fees due |
Free format text: ORIGINAL CODE: NOA |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Year of fee payment: 8 |
|
FEPP | Fee payment procedure |
Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
LAPS | Lapse for failure to pay maintenance fees |
Free format text: PATENT EXPIRED FOR FAILURE TO PAY MAINTENANCE FEES (ORIGINAL EVENT CODE: EXP.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
STCH | Information on status: patent discontinuation |
Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
|
FP | Lapsed due to failure to pay maintenance fee |
Effective date: 20240207 |