US20100112758A1 - Connecting microsized devices using ablative films - Google Patents
Connecting microsized devices using ablative films Download PDFInfo
- Publication number
- US20100112758A1 US20100112758A1 US12/635,747 US63574709A US2010112758A1 US 20100112758 A1 US20100112758 A1 US 20100112758A1 US 63574709 A US63574709 A US 63574709A US 2010112758 A1 US2010112758 A1 US 2010112758A1
- Authority
- US
- United States
- Prior art keywords
- die
- channel
- fluid
- ablative
- microsized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000463 material Substances 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 claims abstract description 42
- 239000012530 fluid Substances 0.000 claims description 76
- 239000000696 magnetic material Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 59
- 239000010410 layer Substances 0.000 description 23
- 230000003287 optical effect Effects 0.000 description 20
- 230000008569 process Effects 0.000 description 17
- 239000004020 conductor Substances 0.000 description 15
- 238000000151 deposition Methods 0.000 description 14
- 239000007788 liquid Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 12
- 230000008021 deposition Effects 0.000 description 10
- 230000005855 radiation Effects 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 238000007641 inkjet printing Methods 0.000 description 8
- 238000000608 laser ablation Methods 0.000 description 8
- 239000011241 protective layer Substances 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 238000003491 array Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 229920006254 polymer film Polymers 0.000 description 4
- 230000003319 supportive effect Effects 0.000 description 4
- 238000002679 ablation Methods 0.000 description 3
- 239000011149 active material Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000005001 laminate film Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 230000000638 stimulation Effects 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 125000005605 benzo group Chemical group 0.000 description 1
- 230000004071 biological effect Effects 0.000 description 1
- 239000012620 biological material Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 238000007647 flexography Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000003534 oscillatory effect Effects 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1258—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by using a substrate provided with a shape pattern, e.g. grooves, banks, resist pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/09—Packages
- B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
- B81B2207/098—Arrangements not provided for in groups B81B2207/092 - B81B2207/097
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4864—Cleaning, e.g. removing of solder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1131—Manufacturing methods by local deposition of the material of the bump connector in liquid form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/24226—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/244—Connecting portions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/2499—Auxiliary members for HDI interconnects, e.g. spacers, alignment aids
- H01L2224/24991—Auxiliary members for HDI interconnects, e.g. spacers, alignment aids being formed on the semiconductor or solid-state body to be connected
- H01L2224/24992—Flow barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/27011—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
- H01L2224/27013—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for holding or confining the layer connector, e.g. solder flow barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73217—Layer and HDI connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/82009—Pre-treatment of the connector or the bonding area
- H01L2224/8203—Reshaping, e.g. forming vias
- H01L2224/82035—Reshaping, e.g. forming vias by heating means
- H01L2224/82039—Reshaping, e.g. forming vias by heating means using a laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/821—Forming a build-up interconnect
- H01L2224/82101—Forming a build-up interconnect by additive methods, e.g. direct writing
- H01L2224/82102—Forming a build-up interconnect by additive methods, e.g. direct writing using jetting, e.g. ink jet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/82909—Post-treatment of the connector or the bonding area
- H01L2224/82951—Forming additional members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/83051—Forming additional members, e.g. dam structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9212—Sequential connecting processes
- H01L2224/92142—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92144—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01077—Iridium [Ir]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09372—Pads and lands
- H05K2201/09472—Recessed pad for surface mounting; Recessed electrode of component
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10674—Flip chip
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/01—Tools for processing; Objects used during processing
- H05K2203/0104—Tools for processing; Objects used during processing for patterning or coating
- H05K2203/013—Inkjet printing, e.g. for printing insulating material or resist
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0562—Details of resist
- H05K2203/0568—Resist used for applying paste, ink or powder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/14—Related to the order of processing steps
- H05K2203/1461—Applying or finishing the circuit pattern after another process, e.g. after filling of vias with conductive paste, after making printed resistors
- H05K2203/1469—Circuit made after mounting or encapsulation of the components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
- H05K3/0032—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/107—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by filling grooves in the support with conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1241—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing
- H05K3/125—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing by ink-jet printing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/94—Laser ablative material removal
Definitions
- the invention relates generally to the field of microsized devices and in particular to processes providing connections to microsized devices, including processes based on the use of ablative films to connect a plurality of microsized devices to one another. More specifically, the invention relates to ablative means for providing fluidic, electrical, photonic, magnetic, and mechanical connections to microsized devices.
- Microsized devices include, for example, micro-accelerometers and micro-gyroscopes for detecting linear and angular accelerations as manufactured by Analog Devices, Inc., chemically sensitive field effect transistors, used to detect the presence of certain molecular vapors such as carbon monoxide or ethanol, pressure sensors for measurement of pressures in automotive systems or micro phonic sensors, such as those employed in cell phones to detect and reproduce audio sounds, and optical sensors for detecting the presence of objects by infra-red radiation.
- MST micro systems technology
- connections may be of many different types, for example electrical, mechanical, or fluidic (vapor).
- connections may be of many different types, for example electrical, mechanical, or fluidic (vapor).
- the objects are small, many interconnected devices may be incorporated for systems applications.
- connections must be made so as not to perturb their functionality, for example by mechanical stress, especially in the face of changes in external environment in which collections of devices are operated, such as temperature or humidity.
- One means of depositing conductive lines is by depositing conductive fluids to fill channels made in polymer films, for example channels made by laser ablation of polymer films, hereinafter referred to as ablative films.
- ablative films channels made in polymer films, for example channels made by laser ablation of polymer films, hereinafter referred to as ablative films.
- microsized devices may then be placed proximate to the conductive lines; and connections, typically electrical, may be made using a variety of techniques, including wire-bonding, flip chip bonding, electroplating, and deposition of conductive materials, including deposition of conductive fluids by inkjet means, typically to ensure the reliable connection of electric leads to the devices or “die.”
- the ablative film 5 includes a substrate 10 , typically a flexible polymer such as a polyamide or polycarbonate, and one or more energy-absorbing layers 20 which can be removed, all or in part, by exposure to intense radiation, or in other words, can be ablated, for example by radiation from a near IR laser.
- a substrate 10 typically a flexible polymer such as a polyamide or polycarbonate
- energy-absorbing layers 20 which can be removed, all or in part, by exposure to intense radiation, or in other words, can be ablated, for example by radiation from a near IR laser.
- Ablative film compositions which can be removed by radiation from a near IR laser are disclosed, for example, by M. Zaki Ali, et al. in US Patent Publication 2005/0227182, which further contemplates using the ablative films, once ablated, as photolithographic masks for subsequent image wise ultraviolet exposure of flexography materials.
- the ablative films described in US 2005/0227182 may contain additional layers which serve purposes other than of a substrate or of energy absorbing layers, for example release layers used in lamination and surface energy control layers for repelling liquids, so that the ablative films, once ablated, may serve a variety of purposes.
- additional layers which serve purposes other than of a substrate or of energy absorbing layers, for example release layers used in lamination and surface energy control layers for repelling liquids, so that the ablative films, once ablated, may serve a variety of purposes.
- Many other material types of polymeric ablative films and laser ablation processes are well known in the art of laser ablation and laser processing for the manufacture of patterns and structures. For example, U.S. Pat. No.
- the ablative film 5 includes a substrate 10 , and multiple layers 30 , some of which are energy absorbing layers. These layers can be removed, all or in part, by exposure to intense radiation. Other layers may provide desired colors or surface properties, such as hydrophobicity, or may comprise release layers to allow separation of the layers, and may be removed (ablated) when nearby underlying or overlying energy absorbing layers absorb radiation.
- FIGS. 2 a - 2 b there is illustrated in cross-section and top-view, respectively, prior art formation of a channel 40 in an ablative film 5 of FIG. 1 a .
- the ablative film 5 includes the two energy-absorbing layers 20 and the substrate 10 as described above.
- the base 50 of the channel 40 may be altered by the ablation process, for example its surface may be rendered hydrophilic.
- ablative films subsequent to patterning by ablation, are those relying on the geometry and surface properties of the ablated film to confine deposited fluids, such as fluids containing conductive materials such as metallic particulates. These fluids are typically deposited by well-known techniques such as ink-jetting or immersion in fluid baths followed by removal, for example by mechanical wiping blades, of excess fluid not in the ablative channels.
- FIG. 2 c there is illustrated in cross-section a prior art process for forming an electrically conductive material 60 in an ablated channel 40 in the ablative film 5 .
- the conductor 60 may be formed by jetting (preferably by inkjet printing means) a liquid containing a metallic precursor into the channel 40 and then annealing the liquid to form the conductor 60 .
- the conductor 60 as commercialized, for example by Dimatix, Inc. and Cabot Corporation.
- the deposition of conductors in channels formed in polymeric films has further been employed to connect together microsized devices electrically, for example by positioning microsized devices on the top surface of polymer films having conductors patterned in channels or on the film surface, the positioning means being one of mechanical placement or, alternatively self assembly, as practiced by Alien Technologies, Inc.
- the microsized devices are positioned in an approximate way near the conductors and then one or more conductive metal strips are deposited which extend from the microsized device(s) to the conductor(s) to establish electrical connections.
- Methods of self-aligned positioning include alignment by matching geometrical features built into both the microsized devices and the substrate or the use of chemical constituents deposited pattern wise on the substrate which attract matching chemical constituents applied to the microsized devices as referenced in Sharma, et al., US Patent Publication 2006/0134799 and Sharma, et al., US Patent Publication 2006/0057293.
- optically emitting diodes arrays may be so formed for display applications.
- the present invention is directed to overcoming one or more of the problems set forth above.
- the invention resides in a method of providing connectivity to a microsized device, the method comprising the steps of providing an ablative base material having at least a top surface; providing a die having a first and second surface and having bonding pads at least upon the first surface; placing the die with the at least first surface of the die contacting the at least top surface of the ablative base material; and ablating a channel in the ablative material proximate to the die.
- the present invention has the following advantage of expanding use of ablative material to include having microsized devices thereon.
- microsized devices may precede the patterning of the primary routes for connections to or between the devices, including mechanical, optical, magnetic, fluidic, or electrical.
- connections may be combinations of the types above, achieved without substantial process complexity over the individual connection types.
- the alignment of the microsized devices to the connections may be of a self-aligned nature without the complexity heretofore required of self-aligned connections to microsized devices.
- FIG. 1 a is a cross-section of a prior art ablative film
- FIG. 1 b is a cross-section of a prior art ablative film
- FIGS. 2 a - 2 b illustrate in cross-section and top-view, respectively, prior art formation of a channel in an ablative film
- FIG. 2 c illustrates in cross-section a prior art process for forming an electrically conductive material in an ablated channel in an ablative film
- FIG. 2 d illustrates schematically in cross-section an embodiment of ablative film 70 of the present invention
- FIG. 3 a - b shows top and cross-sectional views of the microsized device of the present invention having two contact regions
- FIG. 3 c shows a top view of a microsized device having three contact regions
- FIG. 3 d is an alternative embodiment of FIGS. 3 a - b showing a top view of a microsized device of the present invention having two contacts;
- FIG. 3 e shows a cross-section of a microsized device (die) having a contact region (solid fill) partially extending from the top of the die over its left edge;
- FIG. 4 a shows a view of a microsized device (die) having three contact regions (dotted lines) placed with its top-side down on the top surface of an ablative film;
- FIG. 4 b shows a view of two microsized devices (die) having contact regions (dotted lines) placed top-side down on the top surface of an ablative film;
- FIG. 4 c shows the two die of FIG. 4 b including channels formed by laser ablation of the ablative film extending to the contact regions;
- FIGS. 4 d - 4 e illustrate a process for forming the channels of FIG. 4 c in a self-aligned manner to the die
- FIGS. 5 a - 5 b illustrate deposition by inkjet printing means and by dropper or dipping means of a fluid, for example a conductive ink, into the ablated channels of FIG. 4 c , as is well known in the arts of inkjet printing and of fluid coating;
- a fluid for example a conductive ink
- FIG. 6 a illustrates one technique for removal of excess fluid deposition by dropper means of a fluid using a flexible blade
- FIG. 6 b shows a cross-sectional view of a die, channel, and deposited fluid as in FIG. 2 d but in more detail;
- FIG. 7 a - 7 c shows a cross-sectional view of a die, channel, and deposited fluid as in FIG. 2 d but in more detail for the case in which the connection to the die is a photonic connection;
- FIG. 8 a - 8 c shows a cross-sectional view of a die, channel, and deposited fluid as in FIG. 2 d but in more detail for the case in which the connection to the die is a magnetic connection;
- FIG. 9 a - 9 c shows a cross-sectional view of a die, channel, and deposited overlayer for the case in which the connection to the die is a fluidic connection;
- FIG. 10 a - 10 f shows a cross-sectional view of a die, channel, and deposited overlayer for another exemplary case in which the connection to the die is a fluidic connection;
- FIG. 11 a - 11 c shows a cross-sectional view of a die, channel, and channel material for another exemplary case in which the connection to the die is a mechanical connection;
- FIG. 12 a - 12 b shows a top and cross-sectional view of a die, channel, and channel material for the case in which the connection to the die is remote, that is the material in the channel is close to the contact region of the die but not in physical contact;
- FIG. 13 illustrates by top view multiple connections of multiple types, including connections of the electrical, photonic, magnetic, mechanical, and fluidic types, to multiple types of microsized devices, including devices that generate and respond to electrical, photonic, magnetic, mechanical, and fluidic signals.
- Microsized means devices whose features critical to functionality are typically 1 to 100 microns in linear dimension and which are made in processes involving photolithographic exposure of layers of materials to be patterned by subsequent processing.
- a micro-fluidic device means a microsized device whose principal functionality is the transport, analysis, and dispensation of fluid materials (gases and liquids) or information concerning the nature of the analyzed fluidic materials, such as, but not limited to sensors of chemical or biological materials and their physical and chemical properties.
- Micro-fluidic microdevices may also receive information in analog or digital form including electrical or optical information and produce fluidic signals such as pressure changes or changes in chemical composition in fluid connections in analog or digital form as output.
- a microsized photonic device receives, processes, and/or transmit information in the form of optical data, including trains of optical pulses, or analog input or output of light including wavelength optical signals and may respond to optical stimulation in a variety of ways, including electrical and mechanical output.
- Optical microdevices may also receive information in analog or digital form including electrical or mechanical information and produce optical signals in analog or digital form as output.
- Mechanical microsized devices are sensitive to and can produce mechanical stimuli in analog or digital form including quasi-static mechanical motion as well as acoustic waves and pulses and may a respond to mechanical stimulation in a variety of ways, including electrical and optical output.
- Mechanical microdevices may also receive information in analog or digital form including electrical and optical information and produce mechanical or acoustical signals in analog or digital form as output.
- Magnetic microdevices sense magnetic stimuli in analog or digital form including quasi-static magnetic fields as well as time varying fields and may respond to magnetic stimulation in a variety of ways, including producing electrical and optical output. Magnetic microdevices may also receive information in analog or digital form including electrical and optical information and produce magnetic signals in analog or digital form as output.
- the ablative film 70 includes a substrate 80 and two energy-absorbing layers 75 in which a microsized device (die) 90 has been positioned on the top surface of the ablative film 70 and a self-aligned channel 100 is formed in proximity to one edge of the die 90 by laser ablation.
- a microsized device die
- energy absorbed in one or more energy absorbing layers 75 results in the removal of material from the energy-absorbing layer and, depending on the chemical nature of the surrounding layers, removal of material from adjacent layers.
- the die 90 in FIG. 2 d is provided with one or more contact regions comprising metallic bond pads 110 on the side facing the ablative film.
- a liquid 120 containing a metallic precursor has been jetted, for example by inkjet printing means, into the channel 100 .
- a metallic precursor is a fluid which, when dried or annealed, is an electrical conductor, as is well know in the art of printed electronics.
- the liquid 120 containing a metallic precursor in FIG. 2 d fills the channel 100 and has flowed under portions of the die 90 adjacent the channel, thereby providing, when annealed, an electrical and mechanical connection to the die 90 by direct contact to the metallic bond pad 110 .
- the electrical connection to the die 90 is made simultaneously with the process of deposition of the fluid into channel 100 .
- the microsized device 90 includes two contact regions 130 (disposed symmetrically) partially protected by protective layers 135 and having a raised support structure 140 between and along the sides of the contact regions 130 . Provision of the die 90 with support structure 140 is advantageous in making various types of connections to the die 90 , as will be described.
- FIG. 3 c there is shown a top view of an alternative embodiment of the microsized device 90 (die) having three contact regions 130 partially protected by protective layers 135 and having a raised support structure 140 separating some of the contact regions 130 .
- FIG. 3 d there is shown a top view of an alternative embodiment of the microsized device 90 (die) having two contact regions 130 (disposed non-symmetrically) partially protected by protective layers 135 and having a raised support structure 140 separating the contact regions.
- the protective layers 135 do not extend to the edge of the die 90 in portions of the contact regions 130 in order to provide a more direct path for liquids subsequently deposited near the edge of the die 90 to flow to the contact regions 130 .
- FIG. 3 e there is shown a cross-sectional view of an alternative embodiment of the microsized device 90 (die) having a contact region 130 disposed partially extending from the top of the die 90 over its left edge, in order to provide a more direct path for liquids subsequently deposited near the edge of the die 90 to flow to the contact regions 130 .
- FIG. 3 d illustrates electrical connection to the die 90
- the location of protective layer 135 as shown in FIG. 3 d and the use of the raised support structures 140 are useful in providing all types of contacts to the die 90 .
- FIG. 4 a there is shown a top view of the microsized device 90 (die) having three contact regions 130 placed with its top-side down on the top surface of an ablative film 70 .
- the die 90 has been lightly affixed to the ablative film 70 , for example by pressing into the film 70 under heat or by depositing a small amount of adhesive (not shown) to portions of the die 90 , for example to the raised support structure 140 (not visible in this top view as it lies adjacent the top surface of the substrate) separating some of the contact regions 130 .
- the die 90 is not placed with precision; that is, the die center and the angle of the die 90 with respect to the ablative film 70 are not precisely controlled.
- FIG. 4 b there is shown a view of two microsized devices 90 (die) having contact regions 130 placed top-side down on the top surface of an ablative film 70 .
- the die 90 has been lightly affixed to the ablative film 70 , for example by pressing into the film 70 under heat or by depositing a small amount of adhesive to portions of the die 90 .
- the die 90 are not placed with precision; that is, the die centers and the angles of the die 90 with respect to the ablative film 70 and to one another are not precisely controlled.
- Channels 150 are preferably formed by laser ablation of the ablative film 70 extending to the contact regions 130 .
- the channels 150 are formed in a manner such that the channel direction is aligned with the direction of the chip, that is, in FIG. 4 c , the channel 150 is formed perpendicular to the edge of the chip nearest the contact region 130 , despite the fact that the chip has been oriented at an angle to the edge of the ablative film 70 .
- FIGS. 4 d - 4 e there is shown a process for forming the channels 150 of FIG. 4 c in a self-aligned manner to the die 90 .
- FIGS. 4 d - 4 e illustrate the embodiment having two energy absorbing layers 75 covering the substrate 80
- a single energy-absorbing layer is also generally adequate.
- a scanned source of radiation for example a laser beam, ablates portions of the ablative film 70 until it reaches the edge of the die 90 where its energy is reflected away from the film 70 , thereby stopping formation of the channel 150 precisely at the die edge, regardless of the position and angle of orientation of the die 90 .
- the positions of the non-precisely placed die 90 are detected with a camera and stored in a memory file.
- This file is interrogated upon scanning the energy beams and used to control the scanner to move beams toward the desired locations on the die 90 (typically the locations of the contact pads and typically perpendicular to the edge of the chip nearest the contact region, despite the fact that the chip may be oriented at an angle to the edge of the ablative film 70 ).
- the die 90 are principally supported by the raised support structure 140 separating the contact regions 130 so that there is some space between the contact region 130 and the top surface of the ablative film 70 .
- FIGS. 5 a - 5 b there is illustrated deposition by inkjet printing means and by dropper or dipping means of a fluid 160 , for example a conductive ink 160 a (shown later), into the ablated channels 150 of FIG. 4 c , as is well known in the arts of inkjet printing and of fluid coating.
- FIG. 5 a illustrates the process of dropping the conductive fluid 160 while it is actually occurring and
- FIG. 5 b illustrates the final position of the deposited conductive fluid 160 which has been deposited by multiple drops.
- the fluid typically hardens to form a solid, also denoted as 161 .
- the shading of the figures does not differentiate between the fluid and the hardened fluid.
- FIG. 6 a there is illustrated one technique for removal of excess fluid 161 deposition by dropper means of a fluid using a flexible blade 170 .
- FIG. 6 b there is shown a cross-sectional view of the die 90 , channel 150 , and deposited fluid 161 as in FIG. 5 a but in more detail.
- the fluid 161 has wicked underneath a portion of the die 90 and has made physical contact with the contact region 130 of the die 90 .
- This embodiment illustrates the case in which the connection to the die 90 is an electrical connection.
- an electrical connection can be formed from a deposited fluid 161 a if the fluid contains a metallic precursor or is an electrically conductive polymeric material.
- the material in the channel 150 after annealing, is in electrical contact with contact region 130 a .
- a connection so formed to the microsized device 90 enables the device to send and receive data in the form of digital or analog electrical signals. It is not necessary that the conductive material physically contact the contact region 130 a as long as it is closely disposed, as is well know in the art of dielectric current detection.
- the contact regions 130 a in FIG. 6 b may include electrically responsive elements such as voltage or current sources or voltage or current detectors, well known in the art of MST devices.
- the supportive structure 140 in FIG. 6 b aids wicking of the fluid 161 a to the contact region, since it ensures that there is space between the top surface of the ablative film and the protective coating 135 , as well as between the top surface of the ablative film and the contact region 130 a .
- the supportive structure 140 in FIG. 6 b also helps prevent wicking of the fluid 161 a to the contact region 130 a on the right side of the die due to its contact with the top surface of the ablative film.
- FIGS. 7 a - 7 c there is shown a cross-sectional view of the die 90 , channel 150 , and deposited fluid 160 as in FIG. 5 a but in more detail for the case in which the connection to the die 90 is a photonic connection.
- the material 160 deposited in the channel 150 is optically transparent (designated by 161 b ).
- the fluid 161 b has wicked underneath a portion of the die 90 and has made physical contact with the contact region 130 b of the die 90 .
- the fluid 161 b is an optically transparent material, for example a polymer such as polycarbonate or benzo chlorohexal borene
- the material 161 b in the channel 150 after hardening or annealing, is in optical contact with the contact region 130 b on the die.
- the contact region 130 b comprises optically responsive elements, for example LED optical sources made from organic polymers, or photodetectors, made, for example, form deposited films such as ZnSe or doped silicon semiconductor junctions.
- a connection so formed to the microsized device 90 enables the device to send and receive data in the form of digital or analog optical signals.
- the supportive structure 140 in FIG. 7 c aids wicking of the fluid 161 b to the contact region on the left of the die, since it ensures that there is space between the top surface of the ablative film and the contact region 130 b .
- the supportive structure 140 in FIG. 7 c additionally prevents wicking of the fluid to the contact region 130 b on the right side of the die due to its contact with the top surface of the ablative film.
- electrical contacts 130 a may be disposed on the left portion of the die 90 and are connected as disclosed above.
- FIGS. 8 a - 8 c there is shown a cross-sectional view of a die 90 , channel 150 , and deposited fluid 161 c as in FIG. 5 a but in more detail for the case in which the connection to the die 90 is a magnetic connection.
- the material 161 c deposited in the channel 150 is a magnetically active material having a high magnetic permittivity (designated as 161 c ).
- the fluid 161 c has wicked underneath a portion of the die 90 and has made physical contact with the contact regions 130 c of the die 90 , which regions are shown as a pair of channels which serve to conduct a magnetic field to and from a contact region 130 c which is sensitive to an applied field, for example, contact region 130 c could be a Hall type magnetic field sensor.
- the fluid 161 c is a magnetically active material, for example iron or iron alloys
- the material in the channel 150 after hardening or annealing, is in magnetic communication with the contact regions 130 c on the die 90 .
- the contact regions 130 c comprise a magnetically responsive circuit, for example a Hall sensor, or, a source of magnetic fields, for example, a moveable mechanical transducer having a magnetic portion, as is well known in the art of MST devices.
- a connection so formed to the microsized device 90 enables the device to send and receive data in the form of digital or analog magnetic signals. It is not necessary that the magnetically active material physically contact the contact regions 130 c as long as it is closely disposed to the contact regions 130 c , since a magnetic field can be sensed across a gap between the material and the field sensor.
- FIGS. 9 a - 9 c there is shown a cross-sectional view of a microsized device or die 90 , channel 150 , and an overlying conformal laminate film 180 for the case in which the connection to the die 90 is a fluidic connection. It is noted in the figures that color does not differentiate a channel 150 which is empty and a channel which is filled with externally sampled fluid 161 d .
- the contact region 130 d includes means responsive to the chemistry or rheology of the fluid 161 d present in the channel 150 , for example the contact region 130 d may be a chemically sensitive field effect transistor (CHEM-FET) sensitive (which is designated as 130 d ), for example, to the ionic content of the externally sampled fluid 160 d (for example a gas or liquid); or the contact region 130 d may be a conductivity detector, a humidity detector, a gas sensor, or a molecularly specific sensor such as a MIP resonator.
- the contact region 130 d may also be a fluidic opening built into the microdevice itself, to convey fluids to the device for biological analysis or processing.
- the microdevice may include pump means for drawing or dispensing the externally sampled fluid 161 d in the channels 150 .
- Externally sampled fluids 160 d may include either liquids or gases.
- the left portion of the die 90 may include electrical contacts 130 a which are connected as described above.
- a sacrificial material may be placed in the channels 150 , for example a phase change liquid such as a wax may be deposited in the channels and hardened by cooling.
- the sacrificial fluid 161 e may wick underneath a portion of the die 90 and make physical contact with the contact region 130 d of the die 90 .
- a fluid sealant may then be coated, for example by dip or spray coating over the entire ablative film or at least the portion having die and channels, and the sacrificial material 161 e subsequently removed to form channels 150 for the externally sampled fluid 161 d .
- the sacrificial material 161 e may be removed (indicated by 161 d ), for example, by chemical dissolution or by heating to vaporize the material.
- a fluid channel 150 is formed in the ablative film in fluid communication with the contact region(s) of the die 90 .
- a connection so formed to the microsized device enables the device 90 to respond to chemical content, for example the presence of salt in a fluid already present in the channel, or to fluid introduced and/or removed from the channel, as sensed, for example, by the pressure or the dielectric constant of the fluid.
- the fluid is a gas
- the sensor may detect molecular species such as ethane that diffuse or circulate in the channels.
- FIGS. 10 a - 10 f there is shown a cross-sectional view of a die 90 , channel 150 , and deposited overlayer for another exemplary case in which the connection to the die 90 is a fluidic connection.
- the contact region 130 is a fluidic opening built into the end of the microdevice itself, rather than an opening or a sensor defined on the surface of the device, to convey fluids to the device for biological analysis or processing.
- the microdevice may include pump means for drawing or dispensing fluid in the channels 150 and data analysis means to analyze chemical or biological properties of fluids in the microdevice, such fluid functions being well known in the field of micro total analysis system.
- FIGS. 10 a - 10 f there is shown a cross-sectional view of a die 90 , channel 150 , and deposited overlayer for another exemplary case in which the connection to the die 90 is a fluidic connection.
- the contact region 130 is a fluidic opening built into the end of the microdevice itself, rather than an opening or a sensor
- the fluidic channels are formed using the process of fluid deposition of a sacrificial material followed by coating of a sealing layer and then removal of the sacrificial material, as discussed above.
- FIGS. 11 a - 11 c there is shown a cross-sectional view of a die 90 , channel 150 , and channel material 161 f for another exemplary case in which the connection to the die 90 is a mechanical connection.
- the contact region 130 f is mechanically responsive and therefore capable of sensing or producing static motion of the channel material (strain) or sensing or producing oscillatory motion, i.e. acoustic waves.
- Many microdevices are known in the art of MST technology, such as piezo cantilevers and electrostatic actuators, that are capable of all such functions.
- FIG. 11 a - 11 c there is shown a cross-sectional view of a die 90 , channel 150 , and channel material 161 f for another exemplary case in which the connection to the die 90 is a mechanical connection.
- the contact region 130 f is mechanically responsive and therefore capable of sensing or producing static motion of the channel material (strain) or sensing or producing oscillatory motion, i.e.
- 11 a - 11 c provision is also included on the right of the microdevice for channel connections that are electrical in nature, as discussed in association with FIG. 6 a - 6 c .
- the present invention envisions the use of multiple types of connections to and between multiple types of die, including connections of the electrical, photonic, magnetic, mechanical, and fluidic types.
- FIGS. 12 a - 12 b there is shown a top and cross-sectional view of a die 90 , channel 150 , and channel material 160 for the case in which the connection to the die 90 is remote, that is the material in the channel 150 is close to the contact region 130 of the die 90 but not in physical contact.
- FIG. 12 b which contemplates the case of a fluid 160 deposited in the channel 150 , no wicking of the fluid 160 has occurred under the die 90 . This may be accomplished by choosing the surface of the die 90 and the fluid 160 so that the interfacial surface tension is low and does not favor wicking, for example aqueous based fluids will not generally wick under a die that is Teflon coated.
- the contact region 130 is still capable of sensing or receiving or sending electrical, photonic, magnetic, mechanical, and fluidic connections but at a reduced sensitivity.
- Many microdevices are know in the art of MST, such as magnetic detectors and temperature sensors that can detect small changes in fields, produced by say a current flow depicted on the right side of FIG. 12 a , or by small changes in temperature, produced, say, by the flow of a warm fluid as depicted on the left side of FIG. 12 a.
- FIG. 13 there is illustrated a top view of an ablative film 70 having multiple microsized devices with multiple connections of multiple types, including connections of the electrical, photonic, magnetic, mechanical, and fluidic types.
- Such arrays of interconnected microsized devices including devices that generate and respond to electrical, photonic, magnetic, mechanical, and fluidic signals, function as microsystems, as is well known in the MST art.
- the present invention contemplates that the connections are made to devices that are not precisely positioned on the ablative film.
- Channels 150 can be formed in a self aligned manner by focused radiation (e.g.
- the lasers by detecting, for example with a digital camera, the positions of the microsized devices, storing this information in a memory file, and using the information from such files to scan the focused radiation beams toward the desired locations on the die. (typically the locations of the contact pads).
Abstract
A method of providing connectivity to a microsized device, the method includes the steps of providing an ablative base material having at least a top surface; providing a die having a first and second surface and having bonding pads at least upon the first surface; placing the die with the at least first surface of the die contacting the at least first surface of the ablative base material; and ablating a channel in the ablative material proximate to the die.
Description
- This is a continuation of and claims priority from U.S. patent application Ser. No. 11/737,187 filed Apr. 19, 2007, the content of which is incorporated herein by reference.
- This application also is related to U.S. patent application Ser. No. ______, filed concurrently herewith, titled “Connecting Microsized Devices Using Ablative Films”, by M. Zaki Ali, et al., having an attorney docket number of 93538B, and claiming priority to U.S. patent application Ser. No. 11/737,187 as a divisional application.
- The invention relates generally to the field of microsized devices and in particular to processes providing connections to microsized devices, including processes based on the use of ablative films to connect a plurality of microsized devices to one another. More specifically, the invention relates to ablative means for providing fluidic, electrical, photonic, magnetic, and mechanical connections to microsized devices.
- Microsized devices include, for example, micro-accelerometers and micro-gyroscopes for detecting linear and angular accelerations as manufactured by Analog Devices, Inc., chemically sensitive field effect transistors, used to detect the presence of certain molecular vapors such as carbon monoxide or ethanol, pressure sensors for measurement of pressures in automotive systems or micro phonic sensors, such as those employed in cell phones to detect and reproduce audio sounds, and optical sensors for detecting the presence of objects by infra-red radiation. These and other microsized devices are well known to practioners of micro systems technology (MST). Also well known in that art are the difficulties encountered in inexpensive packaging of such microsized devices, in part because their small sizes require accurate positioning of connections and also because the connections may be of many different types, for example electrical, mechanical, or fluidic (vapor). Because the objects are small, many interconnected devices may be incorporated for systems applications. Additionally, since the devices are small, connections must be made so as not to perturb their functionality, for example by mechanical stress, especially in the face of changes in external environment in which collections of devices are operated, such as temperature or humidity.
- Previous means employed for the connection of microdevices have included the use of automated wire bonding apparatus, use of ball grid arrays technology, fabrication of special packages using materials having temperature matched expansion coefficients, and the use of packages encapsulating devices in inert or chemically controlled atmospheres. Although these techniques offer sophisticated solutions, their implementation is not without expense, as is well known, for example, in the case of the packaging of micromirror devices (MMD) as manufactured by Texas Instruments, Inc. More recently, lower cost solutions have become available for mounting and connecting arrays of microsized devices on polymer films, for example those using films on which are patterned conductive lines, which may be deposited by many techniques, including ink jet printing of fluids. Such fluids may be conductive as deposited or may become conductive upon subsequent processing, for example by thermal annealing. These films are typically flexible and therefore are less likely to perturb the functionality of the microsized devices by mechanical stress.
- One means of depositing conductive lines, related to the present invention, is by depositing conductive fluids to fill channels made in polymer films, for example channels made by laser ablation of polymer films, hereinafter referred to as ablative films. As is well known in the art of MST, microsized devices may then be placed proximate to the conductive lines; and connections, typically electrical, may be made using a variety of techniques, including wire-bonding, flip chip bonding, electroplating, and deposition of conductive materials, including deposition of conductive fluids by inkjet means, typically to ensure the reliable connection of electric leads to the devices or “die.”
- Referring to
FIG. 1 a, there is shown a cross-section of a prior artablative film 5. Theablative film 5 includes asubstrate 10, typically a flexible polymer such as a polyamide or polycarbonate, and one or more energy-absorbinglayers 20 which can be removed, all or in part, by exposure to intense radiation, or in other words, can be ablated, for example by radiation from a near IR laser. Ablative film compositions which can be removed by radiation from a near IR laser are disclosed, for example, by M. Zaki Ali, et al. in US Patent Publication 2005/0227182, which further contemplates using the ablative films, once ablated, as photolithographic masks for subsequent image wise ultraviolet exposure of flexography materials. The ablative films described in US 2005/0227182 may contain additional layers which serve purposes other than of a substrate or of energy absorbing layers, for example release layers used in lamination and surface energy control layers for repelling liquids, so that the ablative films, once ablated, may serve a variety of purposes. Many other material types of polymeric ablative films and laser ablation processes are well known in the art of laser ablation and laser processing for the manufacture of patterns and structures. For example, U.S. Pat. No. 7,115,514 by Richard Stoltz and assigned to Raydiance, Inc., describes a laser ablation process using short pulses at wavelengths shorter than the near IR are described for ablating a wide variety of materials including metals and inorganic materials and for altering their surfaces by ablation. - Referring to
FIG. 1 b, there is shown a cross-section of another prior artablative film 5 of a more complex structure. Theablative film 5 includes asubstrate 10, andmultiple layers 30, some of which are energy absorbing layers. These layers can be removed, all or in part, by exposure to intense radiation. Other layers may provide desired colors or surface properties, such as hydrophobicity, or may comprise release layers to allow separation of the layers, and may be removed (ablated) when nearby underlying or overlying energy absorbing layers absorb radiation. - Referring to
FIGS. 2 a-2 b, there is illustrated in cross-section and top-view, respectively, prior art formation of achannel 40 in anablative film 5 ofFIG. 1 a. Theablative film 5 includes the two energy-absorbinglayers 20 and thesubstrate 10 as described above. Thebase 50 of thechannel 40 may be altered by the ablation process, for example its surface may be rendered hydrophilic. - Among the many known uses for ablative films, subsequent to patterning by ablation, are those relying on the geometry and surface properties of the ablated film to confine deposited fluids, such as fluids containing conductive materials such as metallic particulates. These fluids are typically deposited by well-known techniques such as ink-jetting or immersion in fluid baths followed by removal, for example by mechanical wiping blades, of excess fluid not in the ablative channels. Referring to
FIG. 2 c, there is illustrated in cross-section a prior art process for forming an electricallyconductive material 60 in an ablatedchannel 40 in theablative film 5. For example, theconductor 60 may be formed by jetting (preferably by inkjet printing means) a liquid containing a metallic precursor into thechannel 40 and then annealing the liquid to form theconductor 60. Theconductor 60, as commercialized, for example by Dimatix, Inc. and Cabot Corporation. - The deposition of conductors in channels formed in polymeric films has further been employed to connect together microsized devices electrically, for example by positioning microsized devices on the top surface of polymer films having conductors patterned in channels or on the film surface, the positioning means being one of mechanical placement or, alternatively self assembly, as practiced by Alien Technologies, Inc. The microsized devices are positioned in an approximate way near the conductors and then one or more conductive metal strips are deposited which extend from the microsized device(s) to the conductor(s) to establish electrical connections. Methods of self-aligned positioning include alignment by matching geometrical features built into both the microsized devices and the substrate or the use of chemical constituents deposited pattern wise on the substrate which attract matching chemical constituents applied to the microsized devices as referenced in Sharma, et al., US Patent Publication 2006/0134799 and Sharma, et al., US Patent Publication 2006/0057293. For example, optically emitting diodes arrays may be so formed for display applications.
- Although such prior art techniques can provide useable arrays of interconnected devices, the process of placement of the microsized devices must be sufficiently accurate to allow for the cost effective provision of connections, for example connections made of conductive metal strips to establish electrical connections. Such accuracy is generally difficult to achieve for self-aligned processes and expensive to achieve by precision pick and place technologies. Moreover, the deposition of conductive strips is expensive; time consuming and problematic as to reliability if the connection is to be robust on flexible substrates. Additionally, such techniques are not generally applicable to connection types other than electrical, for example connections of the fluidic, magnetic, optical, or mechanical types or connections of mixed types.
- The present invention is directed to overcoming one or more of the problems set forth above. Briefly summarized, according to one aspect of the present invention, the invention resides in a method of providing connectivity to a microsized device, the method comprising the steps of providing an ablative base material having at least a top surface; providing a die having a first and second surface and having bonding pads at least upon the first surface; placing the die with the at least first surface of the die contacting the at least top surface of the ablative base material; and ablating a channel in the ablative material proximate to the die.
- The present invention has the following advantage of expanding use of ablative material to include having microsized devices thereon.
- The placement of microsized devices may precede the patterning of the primary routes for connections to or between the devices, including mechanical, optical, magnetic, fluidic, or electrical.
- The connections may be combinations of the types above, achieved without substantial process complexity over the individual connection types.
- The alignment of the microsized devices to the connections may be of a self-aligned nature without the complexity heretofore required of self-aligned connections to microsized devices.
- Records of the position and alignment of microsized devices are included in the manufacturing process.
- These and other aspects, objects, features and advantages of the present invention will be more clearly understood and appreciated from a review of the following detailed description of the preferred embodiments and appended claims, and by reference to the accompanying drawings.
-
FIG. 1 a is a cross-section of a prior art ablative film; -
FIG. 1 b is a cross-section of a prior art ablative film; -
FIGS. 2 a-2 b illustrate in cross-section and top-view, respectively, prior art formation of a channel in an ablative film; -
FIG. 2 c illustrates in cross-section a prior art process for forming an electrically conductive material in an ablated channel in an ablative film; -
FIG. 2 d illustrates schematically in cross-section an embodiment ofablative film 70 of the present invention; -
FIG. 3 a-b shows top and cross-sectional views of the microsized device of the present invention having two contact regions; -
FIG. 3 c shows a top view of a microsized device having three contact regions; -
FIG. 3 d is an alternative embodiment ofFIGS. 3 a-b showing a top view of a microsized device of the present invention having two contacts; -
FIG. 3 e shows a cross-section of a microsized device (die) having a contact region (solid fill) partially extending from the top of the die over its left edge; -
FIG. 4 a shows a view of a microsized device (die) having three contact regions (dotted lines) placed with its top-side down on the top surface of an ablative film; -
FIG. 4 b shows a view of two microsized devices (die) having contact regions (dotted lines) placed top-side down on the top surface of an ablative film; -
FIG. 4 c shows the two die ofFIG. 4 b including channels formed by laser ablation of the ablative film extending to the contact regions; -
FIGS. 4 d-4 e illustrate a process for forming the channels ofFIG. 4 c in a self-aligned manner to the die; -
FIGS. 5 a-5 b illustrate deposition by inkjet printing means and by dropper or dipping means of a fluid, for example a conductive ink, into the ablated channels ofFIG. 4 c, as is well known in the arts of inkjet printing and of fluid coating; -
FIG. 6 a illustrates one technique for removal of excess fluid deposition by dropper means of a fluid using a flexible blade; -
FIG. 6 b shows a cross-sectional view of a die, channel, and deposited fluid as inFIG. 2 d but in more detail; -
FIG. 7 a-7 c shows a cross-sectional view of a die, channel, and deposited fluid as inFIG. 2 d but in more detail for the case in which the connection to the die is a photonic connection; -
FIG. 8 a-8 c shows a cross-sectional view of a die, channel, and deposited fluid as inFIG. 2 d but in more detail for the case in which the connection to the die is a magnetic connection; -
FIG. 9 a-9 c shows a cross-sectional view of a die, channel, and deposited overlayer for the case in which the connection to the die is a fluidic connection; -
FIG. 10 a-10 f shows a cross-sectional view of a die, channel, and deposited overlayer for another exemplary case in which the connection to the die is a fluidic connection; -
FIG. 11 a-11 c shows a cross-sectional view of a die, channel, and channel material for another exemplary case in which the connection to the die is a mechanical connection; -
FIG. 12 a-12 b shows a top and cross-sectional view of a die, channel, and channel material for the case in which the connection to the die is remote, that is the material in the channel is close to the contact region of the die but not in physical contact; and -
FIG. 13 illustrates by top view multiple connections of multiple types, including connections of the electrical, photonic, magnetic, mechanical, and fluidic types, to multiple types of microsized devices, including devices that generate and respond to electrical, photonic, magnetic, mechanical, and fluidic signals. - Microsized means devices whose features critical to functionality are typically 1 to 100 microns in linear dimension and which are made in processes involving photolithographic exposure of layers of materials to be patterned by subsequent processing. A micro-fluidic device means a microsized device whose principal functionality is the transport, analysis, and dispensation of fluid materials (gases and liquids) or information concerning the nature of the analyzed fluidic materials, such as, but not limited to sensors of chemical or biological materials and their physical and chemical properties. Micro-fluidic microdevices may also receive information in analog or digital form including electrical or optical information and produce fluidic signals such as pressure changes or changes in chemical composition in fluid connections in analog or digital form as output. A microsized photonic device receives, processes, and/or transmit information in the form of optical data, including trains of optical pulses, or analog input or output of light including wavelength optical signals and may respond to optical stimulation in a variety of ways, including electrical and mechanical output. Optical microdevices may also receive information in analog or digital form including electrical or mechanical information and produce optical signals in analog or digital form as output. Mechanical microsized devices are sensitive to and can produce mechanical stimuli in analog or digital form including quasi-static mechanical motion as well as acoustic waves and pulses and may a respond to mechanical stimulation in a variety of ways, including electrical and optical output. Mechanical microdevices may also receive information in analog or digital form including electrical and optical information and produce mechanical or acoustical signals in analog or digital form as output. Magnetic microdevices sense magnetic stimuli in analog or digital form including quasi-static magnetic fields as well as time varying fields and may respond to magnetic stimulation in a variety of ways, including producing electrical and optical output. Magnetic microdevices may also receive information in analog or digital form including electrical and optical information and produce magnetic signals in analog or digital form as output.
- Referring to
FIG. 2 d, there is shown one embodiment ofablative film 70 of the present invention. Theablative film 70 includes asubstrate 80 and two energy-absorbinglayers 75 in which a microsized device (die) 90 has been positioned on the top surface of theablative film 70 and a self-alignedchannel 100 is formed in proximity to one edge of the die 90 by laser ablation. As is well known in the art of laser ablation, energy absorbed in one or moreenergy absorbing layers 75 results in the removal of material from the energy-absorbing layer and, depending on the chemical nature of the surrounding layers, removal of material from adjacent layers. The die 90 inFIG. 2 d is provided with one or more contact regions comprisingmetallic bond pads 110 on the side facing the ablative film. A liquid 120 containing a metallic precursor has been jetted, for example by inkjet printing means, into thechannel 100. A metallic precursor is a fluid which, when dried or annealed, is an electrical conductor, as is well know in the art of printed electronics. The liquid 120 containing a metallic precursor inFIG. 2 d fills thechannel 100 and has flowed under portions of the die 90 adjacent the channel, thereby providing, when annealed, an electrical and mechanical connection to the die 90 by direct contact to themetallic bond pad 110. Advantageously, the electrical connection to thedie 90 is made simultaneously with the process of deposition of the fluid intochannel 100. - Referring to
FIGS. 3 a-3 b, there is shown top and cross-sectional views of the microsized device 90 (die). Themicrosized device 90 includes two contact regions 130 (disposed symmetrically) partially protected byprotective layers 135 and having a raisedsupport structure 140 between and along the sides of thecontact regions 130. Provision of the die 90 withsupport structure 140 is advantageous in making various types of connections to thedie 90, as will be described. - Referring to
FIG. 3 c, there is shown a top view of an alternative embodiment of the microsized device 90 (die) having threecontact regions 130 partially protected byprotective layers 135 and having a raisedsupport structure 140 separating some of thecontact regions 130. - Referring to
FIG. 3 d, there is shown a top view of an alternative embodiment of the microsized device 90 (die) having two contact regions 130 (disposed non-symmetrically) partially protected byprotective layers 135 and having a raisedsupport structure 140 separating the contact regions. Theprotective layers 135 do not extend to the edge of the die 90 in portions of thecontact regions 130 in order to provide a more direct path for liquids subsequently deposited near the edge of the die 90 to flow to thecontact regions 130. - Referring to
FIG. 3 e, there is shown a cross-sectional view of an alternative embodiment of the microsized device 90 (die) having acontact region 130 disposed partially extending from the top of the die 90 over its left edge, in order to provide a more direct path for liquids subsequently deposited near the edge of the die 90 to flow to thecontact regions 130. AlthoughFIG. 3 d illustrates electrical connection to thedie 90, the location ofprotective layer 135 as shown inFIG. 3 d and the use of the raisedsupport structures 140 are useful in providing all types of contacts to thedie 90. - Referring to
FIG. 4 a, there is shown a top view of the microsized device 90 (die) having threecontact regions 130 placed with its top-side down on the top surface of anablative film 70. Thedie 90 has been lightly affixed to theablative film 70, for example by pressing into thefilm 70 under heat or by depositing a small amount of adhesive (not shown) to portions of the die 90, for example to the raised support structure 140 (not visible in this top view as it lies adjacent the top surface of the substrate) separating some of thecontact regions 130. Note thedie 90 is not placed with precision; that is, the die center and the angle of the die 90 with respect to theablative film 70 are not precisely controlled. - Referring to
FIG. 4 b, there is shown a view of two microsized devices 90 (die) havingcontact regions 130 placed top-side down on the top surface of anablative film 70. Thedie 90 has been lightly affixed to theablative film 70, for example by pressing into thefilm 70 under heat or by depositing a small amount of adhesive to portions of thedie 90. It is noted the die 90 are not placed with precision; that is, the die centers and the angles of the die 90 with respect to theablative film 70 and to one another are not precisely controlled. - Referring to
FIG. 4 c, there is shown the two die 90 ofFIG. 4 b.Channels 150 are preferably formed by laser ablation of theablative film 70 extending to thecontact regions 130. Thechannels 150 are formed in a manner such that the channel direction is aligned with the direction of the chip, that is, inFIG. 4 c, thechannel 150 is formed perpendicular to the edge of the chip nearest thecontact region 130, despite the fact that the chip has been oriented at an angle to the edge of theablative film 70. - Referring to
FIGS. 4 d-4 e, there is shown a process for forming thechannels 150 ofFIG. 4 c in a self-aligned manner to thedie 90. It is noted that althoughFIGS. 4 d-4 e illustrate the embodiment having twoenergy absorbing layers 75 covering thesubstrate 80, a single energy-absorbing layer is also generally adequate. A scanned source of radiation, for example a laser beam, ablates portions of theablative film 70 until it reaches the edge of the die 90 where its energy is reflected away from thefilm 70, thereby stopping formation of thechannel 150 precisely at the die edge, regardless of the position and angle of orientation of thedie 90. If required, the positions of the non-precisely placed die 90 are detected with a camera and stored in a memory file. This file is interrogated upon scanning the energy beams and used to control the scanner to move beams toward the desired locations on the die 90 (typically the locations of the contact pads and typically perpendicular to the edge of the chip nearest the contact region, despite the fact that the chip may be oriented at an angle to the edge of the ablative film 70). It is noted that the die 90 are principally supported by the raisedsupport structure 140 separating thecontact regions 130 so that there is some space between thecontact region 130 and the top surface of theablative film 70. - Referring to
FIGS. 5 a-5 b, there is illustrated deposition by inkjet printing means and by dropper or dipping means of a fluid 160, for example aconductive ink 160 a (shown later), into theablated channels 150 ofFIG. 4 c, as is well known in the arts of inkjet printing and of fluid coating.FIG. 5 a illustrates the process of dropping theconductive fluid 160 while it is actually occurring andFIG. 5 b illustrates the final position of the depositedconductive fluid 160 which has been deposited by multiple drops. As is well known in the art of conductive fluid, the fluid typically hardens to form a solid, also denoted as 161. Hereafter, the shading of the figures does not differentiate between the fluid and the hardened fluid. - Referring to
FIG. 6 a, there is illustrated one technique for removal ofexcess fluid 161 deposition by dropper means of a fluid using aflexible blade 170. - Referring to
FIG. 6 b, there is shown a cross-sectional view of the die 90,channel 150, and depositedfluid 161 as inFIG. 5 a but in more detail. In accordance with the present invention, the fluid 161 has wicked underneath a portion of thedie 90 and has made physical contact with thecontact region 130 of thedie 90. This embodiment illustrates the case in which the connection to thedie 90 is an electrical connection. For example, as is well know in the thin film materials art, an electrical connection can be formed from a deposited fluid 161 a if the fluid contains a metallic precursor or is an electrically conductive polymeric material. The material in thechannel 150, after annealing, is in electrical contact withcontact region 130 a. A connection so formed to themicrosized device 90 enables the device to send and receive data in the form of digital or analog electrical signals. It is not necessary that the conductive material physically contact thecontact region 130 a as long as it is closely disposed, as is well know in the art of dielectric current detection. Thecontact regions 130 a inFIG. 6 b may include electrically responsive elements such as voltage or current sources or voltage or current detectors, well known in the art of MST devices. Thesupportive structure 140 inFIG. 6 b aids wicking of the fluid 161 a to the contact region, since it ensures that there is space between the top surface of the ablative film and theprotective coating 135, as well as between the top surface of the ablative film and thecontact region 130 a. Thesupportive structure 140 inFIG. 6 b also helps prevent wicking of the fluid 161 a to thecontact region 130 a on the right side of the die due to its contact with the top surface of the ablative film. - Referring to
FIGS. 7 a-7 c, there is shown a cross-sectional view of the die 90,channel 150, and depositedfluid 160 as inFIG. 5 a but in more detail for the case in which the connection to thedie 90 is a photonic connection. In this case, thematerial 160 deposited in thechannel 150 is optically transparent (designated by 161 b). In accordance with the present invention, the fluid 161 b has wicked underneath a portion of thedie 90 and has made physical contact with thecontact region 130 b of thedie 90. In the case that the fluid 161 b is an optically transparent material, for example a polymer such as polycarbonate or benzo chlorohexal borene, thematerial 161 b in thechannel 150, after hardening or annealing, is in optical contact with thecontact region 130 b on the die. In this case, thecontact region 130 b comprises optically responsive elements, for example LED optical sources made from organic polymers, or photodetectors, made, for example, form deposited films such as ZnSe or doped silicon semiconductor junctions. A connection so formed to themicrosized device 90 enables the device to send and receive data in the form of digital or analog optical signals. It is not necessary that the optically transmissive material physically contact thecontact region 130 b as long as it is closely disposed since light can travel across the gap between the transmissive material and the optical sensor. Thesupportive structure 140 inFIG. 7 c aids wicking of the fluid 161 b to the contact region on the left of the die, since it ensures that there is space between the top surface of the ablative film and thecontact region 130 b. Thesupportive structure 140 inFIG. 7 c additionally prevents wicking of the fluid to thecontact region 130 b on the right side of the die due to its contact with the top surface of the ablative film. - It is noted that
electrical contacts 130 a may be disposed on the left portion of thedie 90 and are connected as disclosed above. - Referring to
FIGS. 8 a-8 c, there is shown a cross-sectional view of a die 90,channel 150, and depositedfluid 161 c as inFIG. 5 a but in more detail for the case in which the connection to thedie 90 is a magnetic connection. In this case, thematerial 161 c deposited in thechannel 150 is a magnetically active material having a high magnetic permittivity (designated as 161 c). In accordance with the present invention, the fluid 161 c has wicked underneath a portion of thedie 90 and has made physical contact with thecontact regions 130 c of the die 90, which regions are shown as a pair of channels which serve to conduct a magnetic field to and from acontact region 130 c which is sensitive to an applied field, for example,contact region 130 c could be a Hall type magnetic field sensor. In the case that the fluid 161 c is a magnetically active material, for example iron or iron alloys, the material in thechannel 150, after hardening or annealing, is in magnetic communication with thecontact regions 130 c on thedie 90. In this case, thecontact regions 130 c comprise a magnetically responsive circuit, for example a Hall sensor, or, a source of magnetic fields, for example, a moveable mechanical transducer having a magnetic portion, as is well known in the art of MST devices. A connection so formed to themicrosized device 90 enables the device to send and receive data in the form of digital or analog magnetic signals. It is not necessary that the magnetically active material physically contact thecontact regions 130 c as long as it is closely disposed to thecontact regions 130 c, since a magnetic field can be sensed across a gap between the material and the field sensor. - Referring to
FIGS. 9 a-9 c, there is shown a cross-sectional view of a microsized device or die 90,channel 150, and an overlyingconformal laminate film 180 for the case in which the connection to thedie 90 is a fluidic connection. It is noted in the figures that color does not differentiate achannel 150 which is empty and a channel which is filled with externally sampled fluid 161 d. In this case, thecontact region 130 d includes means responsive to the chemistry or rheology of the fluid 161 d present in thechannel 150, for example thecontact region 130 d may be a chemically sensitive field effect transistor (CHEM-FET) sensitive (which is designated as 130 d), for example, to the ionic content of the externally sampled fluid 160 d (for example a gas or liquid); or thecontact region 130 d may be a conductivity detector, a humidity detector, a gas sensor, or a molecularly specific sensor such as a MIP resonator. Thecontact region 130 d may also be a fluidic opening built into the microdevice itself, to convey fluids to the device for biological analysis or processing. In this case, the microdevice may include pump means for drawing or dispensing the externally sampled fluid 161 d in thechannels 150. Externally sampledfluids 160 d may include either liquids or gases. In one embodiment of this case, there is no material deposited in thechannel 150 but a conformal laminate film 180 (FIG. 9 c) has been placed at least over those portions of the die 90 wherechannels 150 have been formed to serve as a cap to the channel. - It is noted the left portion of the die 90 may include
electrical contacts 130 a which are connected as described above. - Alternatively (
FIGS. 10 a-10 f), a sacrificial material may be placed in thechannels 150, for example a phase change liquid such as a wax may be deposited in the channels and hardened by cooling. In accordance with this embodiment, thesacrificial fluid 161 e may wick underneath a portion of thedie 90 and make physical contact with thecontact region 130 d of thedie 90. A fluid sealant may then be coated, for example by dip or spray coating over the entire ablative film or at least the portion having die and channels, and thesacrificial material 161 e subsequently removed to formchannels 150 for the externally sampled fluid 161 d. Thesacrificial material 161 e may be removed (indicated by 161 d), for example, by chemical dissolution or by heating to vaporize the material. In accordance with either procedure, afluid channel 150 is formed in the ablative film in fluid communication with the contact region(s) of thedie 90. A connection so formed to the microsized device enables thedevice 90 to respond to chemical content, for example the presence of salt in a fluid already present in the channel, or to fluid introduced and/or removed from the channel, as sensed, for example, by the pressure or the dielectric constant of the fluid. Similarly if the fluid is a gas, the sensor may detect molecular species such as ethane that diffuse or circulate in the channels. - Referring to
FIGS. 10 a-10 f, there is shown a cross-sectional view of a die 90,channel 150, and deposited overlayer for another exemplary case in which the connection to thedie 90 is a fluidic connection. In this case, thecontact region 130 is a fluidic opening built into the end of the microdevice itself, rather than an opening or a sensor defined on the surface of the device, to convey fluids to the device for biological analysis or processing. The microdevice may include pump means for drawing or dispensing fluid in thechannels 150 and data analysis means to analyze chemical or biological properties of fluids in the microdevice, such fluid functions being well known in the field of micro total analysis system. InFIGS. 10 a-10 c, provision is also included on the right of the microdevice for channel connections that are electrical in nature, as discussed in association withFIG. 6 a-6 c. In fact, the present invention envisions the use of multiple types of connections to single die and between die 90, including connections of the electrical, photonic, magnetic, and fluidic types. InFIG. 10 a-10 c, the fluidic channels are formed using the process of fluid deposition of a sacrificial material followed by coating of a sealing layer and then removal of the sacrificial material, as discussed above. - Referring to
FIGS. 11 a-11 c, there is shown a cross-sectional view of a die 90,channel 150, andchannel material 161 f for another exemplary case in which the connection to thedie 90 is a mechanical connection. In this case, thecontact region 130 f is mechanically responsive and therefore capable of sensing or producing static motion of the channel material (strain) or sensing or producing oscillatory motion, i.e. acoustic waves. Many microdevices are known in the art of MST technology, such as piezo cantilevers and electrostatic actuators, that are capable of all such functions. InFIG. 11 a-11 c, provision is also included on the right of the microdevice for channel connections that are electrical in nature, as discussed in association withFIG. 6 a-6 c. The present invention envisions the use of multiple types of connections to and between multiple types of die, including connections of the electrical, photonic, magnetic, mechanical, and fluidic types. - Referring to
FIGS. 12 a-12 b, there is shown a top and cross-sectional view of a die 90,channel 150, andchannel material 160 for the case in which the connection to thedie 90 is remote, that is the material in thechannel 150 is close to thecontact region 130 of the die 90 but not in physical contact. As shown inFIG. 12 b, which contemplates the case of a fluid 160 deposited in thechannel 150, no wicking of the fluid 160 has occurred under thedie 90. This may be accomplished by choosing the surface of thedie 90 and the fluid 160 so that the interfacial surface tension is low and does not favor wicking, for example aqueous based fluids will not generally wick under a die that is Teflon coated. In this case, thecontact region 130 is still capable of sensing or receiving or sending electrical, photonic, magnetic, mechanical, and fluidic connections but at a reduced sensitivity. Many microdevices are know in the art of MST, such as magnetic detectors and temperature sensors that can detect small changes in fields, produced by say a current flow depicted on the right side ofFIG. 12 a, or by small changes in temperature, produced, say, by the flow of a warm fluid as depicted on the left side ofFIG. 12 a. - Finally, referring to
FIG. 13 , there is illustrated a top view of anablative film 70 having multiple microsized devices with multiple connections of multiple types, including connections of the electrical, photonic, magnetic, mechanical, and fluidic types. Such arrays of interconnected microsized devices, including devices that generate and respond to electrical, photonic, magnetic, mechanical, and fluidic signals, function as microsystems, as is well known in the MST art. As has been discussed, and as shown inFIG. 13 , the present invention contemplates that the connections are made to devices that are not precisely positioned on the ablative film.Channels 150 can be formed in a self aligned manner by focused radiation (e.g. lasers) by detecting, for example with a digital camera, the positions of the microsized devices, storing this information in a memory file, and using the information from such files to scan the focused radiation beams toward the desired locations on the die. (typically the locations of the contact pads). - The invention has been described with reference to a preferred embodiment. However, it will be appreciated that variations and modifications can be effected by a person of ordinary skill in the art without departing from the scope of the invention.
-
- 5 ablative film
- 10 substrate
- 20 energy-absorbing layer
- 30 multiple layers
- 40 channel
- 50 base
- 60 conductor
- 70 ablative film
- 75 energy-absorbing layer
- 80 substrate
- 90 die
- 100 channel
- 110 metallic bond pads
- 120 liquid
- 130 contact regions
- 130 a conductive contacts
- 130 b optical contacts
- 130 c magnetic contacts
- 130 d external contacts
- 130 f mechanical contact
- 135 protective layers
- 140 raised support structure
- 150 channels
- 160 fluid
- 160 a conductive ink
- 160 d externally sampled fluid
- 161 hardened liquid (solid)
- 161 a conductive material/deposited fluid
- 161 b optical connection
- 161 c magnetic connection
- 161 d external connection
- 161 e sacrificial connection
- 161 f mechanical connection
- 170 flexible blade
- 180 conformal laminate film
Claims (11)
1. A method of providing connectivity to a microsized device, the method comprising the steps of:
(a) providing an ablative base material having at least a top surface;
(b) providing a die having a first and second surface and having bonding pads at least upon the first surface;
(c) placing the die with the at least first surface of the die contacting the at least top surface of the ablative base material; and
(d) ablating a channel in the ablative material proximate to, but not facing the die following placement of the die on the top surface of the ablative base material.
2. The method as in claim 1 further comprising the step of placing a material in the ablated channel to provide a connective material therein.
3. The method as in claim 1 further comprising the step of placing a fluid in the ablated channel to provide contact to portions of the die by the wicking of the fluid.
4. The method as in claim 1 further comprising a support structure on the microsized device to control fluid wicking.
5. The method of claim 1 further comprising the steps of;
(a) determining a position of the placed microdevice and storing results; and
(b) causing the ablative channel to align to the pre-positioned microdevice.
6. The method of claim 2 , wherein the material filling the channel is a fluid.
7. The method of claim 2 , wherein the material filling the channel provides electrical connection(s) to the die.
8. The method of claim 2 , wherein the material filling the channel is a magnetic material.
9. The method of claim 2 , wherein the material filling the channel conveys light.
10. The method of claim 2 , wherein the material filling the channel is responsive to sound or motion.
11. The method of claim 1 including providing structures on the microsized devices to facilitate fluidic, electrical, photonic, and mechanical connections to the devices.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/635,747 US20100112758A1 (en) | 2007-04-19 | 2009-12-11 | Connecting microsized devices using ablative films |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/737,187 US7696013B2 (en) | 2007-04-19 | 2007-04-19 | Connecting microsized devices using ablative films |
US12/635,747 US20100112758A1 (en) | 2007-04-19 | 2009-12-11 | Connecting microsized devices using ablative films |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/737,187 Continuation US7696013B2 (en) | 2007-04-19 | 2007-04-19 | Connecting microsized devices using ablative films |
Publications (1)
Publication Number | Publication Date |
---|---|
US20100112758A1 true US20100112758A1 (en) | 2010-05-06 |
Family
ID=39643402
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/737,187 Expired - Fee Related US7696013B2 (en) | 2007-04-19 | 2007-04-19 | Connecting microsized devices using ablative films |
US12/635,750 Abandoned US20100109168A1 (en) | 2007-04-19 | 2009-12-11 | Connecting microsized devices using ablative films |
US12/635,747 Abandoned US20100112758A1 (en) | 2007-04-19 | 2009-12-11 | Connecting microsized devices using ablative films |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/737,187 Expired - Fee Related US7696013B2 (en) | 2007-04-19 | 2007-04-19 | Connecting microsized devices using ablative films |
US12/635,750 Abandoned US20100109168A1 (en) | 2007-04-19 | 2009-12-11 | Connecting microsized devices using ablative films |
Country Status (5)
Country | Link |
---|---|
US (3) | US7696013B2 (en) |
EP (1) | EP2147463A2 (en) |
JP (1) | JP2010527509A (en) |
CN (1) | CN101681851A (en) |
WO (1) | WO2008130493A2 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9142475B2 (en) * | 2013-08-13 | 2015-09-22 | Intel Corporation | Magnetic contacts |
EP3127148A4 (en) * | 2014-03-31 | 2017-11-15 | Multerra Bio, Inc. | Low-cost packaging for fluidic and device co-integration |
JP6152486B2 (en) | 2014-09-26 | 2017-06-21 | インテル コーポレイション | Flexible package structure |
DE102016212666A1 (en) * | 2016-07-12 | 2018-01-18 | Schweizer Electronic Ag | Method for producing a printed circuit board element and printed circuit board element |
CN110024120A (en) | 2016-11-21 | 2019-07-16 | 3M创新有限公司 | Being automatically aligned between circuit die and interconnection piece |
EP3355667A1 (en) | 2017-01-30 | 2018-08-01 | Siemens Aktiengesellschaft | Method for producing an electrical circuit and electrical circuit |
DE102017221544A1 (en) * | 2017-11-30 | 2019-06-06 | Contitech Antriebssysteme Gmbh | Flexible product |
US20190204505A1 (en) * | 2017-12-30 | 2019-07-04 | Texas Instruments Incorporated | Additive photonic interconnects in microelectronic device |
WO2019224670A1 (en) * | 2018-05-21 | 2019-11-28 | 3M Innovative Properties Company | Ultrathin and flexible devices including circuit dies |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5472539A (en) * | 1994-06-06 | 1995-12-05 | General Electric Company | Methods for forming and positioning moldable permanent magnets on electromagnetically actuated microfabricated components |
US6752966B1 (en) * | 1999-09-10 | 2004-06-22 | Caliper Life Sciences, Inc. | Microfabrication methods and devices |
US20050227182A1 (en) * | 2004-04-10 | 2005-10-13 | Kodak Polychrome Graphics Llc | Method of producing a relief image for printing |
US20050244955A1 (en) * | 2004-04-21 | 2005-11-03 | The Regents Of The University Of California | Automated, programmable, high throughput, multiplexed assay system for cellular and biological assays |
US6987312B2 (en) * | 2002-02-07 | 2006-01-17 | Infineon Technologies, Ag | Semiconductor device with sensor and/or actuator surface and method for producing it |
US20060057293A1 (en) * | 2004-09-03 | 2006-03-16 | Eastman Kodak Company | Thermally controlled fluidic self-assembly |
US20060063111A1 (en) * | 2004-09-17 | 2006-03-23 | Kodak Polychrome | Method of forming a structured surface using ablatable radiation sensitive material |
US20060118233A1 (en) * | 2003-07-07 | 2006-06-08 | Christopher Wargo | System and method for forming high resolution electronic circuits on a substrate |
US20060134799A1 (en) * | 2004-12-22 | 2006-06-22 | Eastman Kodak Company | Thermally controlled fluidic self-assembly |
US7115514B2 (en) * | 2003-10-02 | 2006-10-03 | Raydiance, Inc. | Semiconductor manufacturing using optical ablation |
US20070220970A1 (en) * | 2004-04-30 | 2007-09-27 | Markus Gruber | Measuring Cell as Well as Constructing Methods for a Measuring Cell and Measuring Apparatus with a Mount for Such a Measuring Cell |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1325658C (en) | 2001-04-23 | 2007-07-11 | 三星电子株式会社 | Molecular detection chip including MOSFET, molecular detection device employing chip, and molecular detection method using the device |
EP1604197A2 (en) | 2003-03-18 | 2005-12-14 | Cantion A/S | A cantilever array chemical sensor |
US20080199362A1 (en) | 2005-02-15 | 2008-08-21 | Agency For Science, Technology And Research | Microfluidics Package and Method of Fabricating the Same |
JP2006332615A (en) * | 2005-04-25 | 2006-12-07 | Brother Ind Ltd | Method for forming pattern |
-
2007
- 2007-04-19 US US11/737,187 patent/US7696013B2/en not_active Expired - Fee Related
-
2008
- 2008-04-04 CN CN200880012539A patent/CN101681851A/en active Pending
- 2008-04-04 EP EP08742558A patent/EP2147463A2/en not_active Withdrawn
- 2008-04-04 WO PCT/US2008/004406 patent/WO2008130493A2/en active Application Filing
- 2008-04-04 JP JP2010504047A patent/JP2010527509A/en active Pending
-
2009
- 2009-12-11 US US12/635,750 patent/US20100109168A1/en not_active Abandoned
- 2009-12-11 US US12/635,747 patent/US20100112758A1/en not_active Abandoned
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5472539A (en) * | 1994-06-06 | 1995-12-05 | General Electric Company | Methods for forming and positioning moldable permanent magnets on electromagnetically actuated microfabricated components |
US6752966B1 (en) * | 1999-09-10 | 2004-06-22 | Caliper Life Sciences, Inc. | Microfabrication methods and devices |
US6987312B2 (en) * | 2002-02-07 | 2006-01-17 | Infineon Technologies, Ag | Semiconductor device with sensor and/or actuator surface and method for producing it |
US20060118233A1 (en) * | 2003-07-07 | 2006-06-08 | Christopher Wargo | System and method for forming high resolution electronic circuits on a substrate |
US7115514B2 (en) * | 2003-10-02 | 2006-10-03 | Raydiance, Inc. | Semiconductor manufacturing using optical ablation |
US20050227182A1 (en) * | 2004-04-10 | 2005-10-13 | Kodak Polychrome Graphics Llc | Method of producing a relief image for printing |
US20050244955A1 (en) * | 2004-04-21 | 2005-11-03 | The Regents Of The University Of California | Automated, programmable, high throughput, multiplexed assay system for cellular and biological assays |
US20070220970A1 (en) * | 2004-04-30 | 2007-09-27 | Markus Gruber | Measuring Cell as Well as Constructing Methods for a Measuring Cell and Measuring Apparatus with a Mount for Such a Measuring Cell |
US20060057293A1 (en) * | 2004-09-03 | 2006-03-16 | Eastman Kodak Company | Thermally controlled fluidic self-assembly |
US20060063111A1 (en) * | 2004-09-17 | 2006-03-23 | Kodak Polychrome | Method of forming a structured surface using ablatable radiation sensitive material |
US20060134799A1 (en) * | 2004-12-22 | 2006-06-22 | Eastman Kodak Company | Thermally controlled fluidic self-assembly |
Also Published As
Publication number | Publication date |
---|---|
WO2008130493A2 (en) | 2008-10-30 |
CN101681851A (en) | 2010-03-24 |
US20080258313A1 (en) | 2008-10-23 |
US7696013B2 (en) | 2010-04-13 |
EP2147463A2 (en) | 2010-01-27 |
US20100109168A1 (en) | 2010-05-06 |
WO2008130493A3 (en) | 2009-03-19 |
JP2010527509A (en) | 2010-08-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20100112758A1 (en) | Connecting microsized devices using ablative films | |
US10068938B2 (en) | Solid image-pickup device with flexible circuit substrate | |
US6351390B1 (en) | Method for applying a microsystem or a converter on a substrate, and device manufactured accordingly | |
US7485956B2 (en) | Microelectronic package optionally having differing cover and device thermal expansivities | |
US8563358B2 (en) | Method of producing a chip package, and chip package | |
CN105244330B (en) | Wafer encapsulation body | |
US8865499B2 (en) | MEMS microphone and method for producing the MEMS microphone | |
US8334158B2 (en) | Sensor device and manufacturing method thereof | |
US20100117224A1 (en) | Sensor | |
JP2018050031A (en) | Patterned layer composite material | |
JP4361567B2 (en) | Sealing MEMS devices using liquid crystal polymers | |
US11101189B2 (en) | Semiconductor device package and method of manufacturing the same | |
US8975106B2 (en) | Chip package and method for forming the same | |
CN106469741A (en) | Sensing module and its manufacture method | |
KR101271283B1 (en) | Power Semiconductor Module | |
US20220238773A1 (en) | Method for Producing a Component, and Component | |
US11364493B2 (en) | Planarization layers over silicon dies | |
EP2320453A1 (en) | Sensor packaging | |
JP4862988B2 (en) | Wiring substrate and semiconductor device manufacturing method | |
CN109830890B (en) | Chip module, wafer-level chip packaging structure and packaging method | |
JP2009246128A (en) | Mounting method of integrated circuit chip on board, and mounting device of integrated circuit chip | |
US20090193905A1 (en) | Pressure Sensor Package Structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |