US20100013070A1 - Power module package having excellent heat sink emission capability and method for manufacturing the same - Google Patents
Power module package having excellent heat sink emission capability and method for manufacturing the same Download PDFInfo
- Publication number
- US20100013070A1 US20100013070A1 US12/565,274 US56527409A US2010013070A1 US 20100013070 A1 US20100013070 A1 US 20100013070A1 US 56527409 A US56527409 A US 56527409A US 2010013070 A1 US2010013070 A1 US 2010013070A1
- Authority
- US
- United States
- Prior art keywords
- circuit element
- power module
- module package
- metal
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title description 24
- 238000004519 manufacturing process Methods 0.000 title description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 84
- 239000000758 substrate Substances 0.000 claims abstract description 83
- 229910052751 metal Inorganic materials 0.000 claims abstract description 70
- 239000002184 metal Substances 0.000 claims abstract description 70
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 57
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 52
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 52
- 238000009413 insulation Methods 0.000 claims abstract description 46
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 46
- 238000010292 electrical insulation Methods 0.000 claims abstract description 25
- 239000000853 adhesive Substances 0.000 claims abstract description 20
- 230000001070 adhesive effect Effects 0.000 claims abstract description 20
- 229920005989 resin Polymers 0.000 claims abstract description 9
- 239000011347 resin Substances 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000945 filler Substances 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229920002379 silicone rubber Polymers 0.000 claims description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims description 2
- 229920006332 epoxy adhesive Polymers 0.000 claims description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 claims 1
- 229910000838 Al alloy Inorganic materials 0.000 claims 1
- 150000004767 nitrides Chemical group 0.000 claims 1
- 238000007789 sealing Methods 0.000 abstract description 7
- 230000005540 biological transmission Effects 0.000 abstract description 6
- 229920006336 epoxy molding compound Polymers 0.000 description 48
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 20
- 239000000919 ceramic Substances 0.000 description 15
- 239000010949 copper Substances 0.000 description 13
- 229910052802 copper Inorganic materials 0.000 description 12
- 230000008569 process Effects 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000007743 anodising Methods 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004593 Epoxy Substances 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229920002050 silicone resin Polymers 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 239000010931 gold Substances 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- -1 and further Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000001721 transfer moulding Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007500 overflow downdraw method Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/028—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles by means of an interlayer consisting of an organic adhesive, e.g. phenol resin or pitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/165—Containers
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
- C04B2237/343—Alumina or aluminates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
- C04B2237/402—Aluminium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- the present invention relates to a semiconductor package, and more particularly, to a power module package having excellent heat transfer characteristics .
- a semiconductor package is manufactured in the following way: one or more semiconductor chips, such as power semiconductor devices or integrated circuits, are mounted on a lead frame or a printed circuit board (PCB), then sealed with an epoxy molding compound (EMC) for protecting the chips, and the packaged chips are mounted on a mother board or a PCB for a system.
- the word “chip” means a semiconductor power device or a semiconductor integrated circuit.
- a semiconductor power device may be a single power transistor or one or more power transistors including one or more transistors for controlling or monitoring operation of the power transistors.
- One way of resolving these demands is to construct a power module package that contains two or more semiconductor chips in a single semiconductor package.
- Such power module packages include one or more power circuit chips and a control circuit chip. But power circuit chips generate much more heat than the heat generated by integrated circuits or control chips. Therefore, effectively transferring heat from the chips to outside the package is critical for maintaining high reliability for a long time for such power modules.
- FIG. 1 herein illustrates a cross-sectional view of the power module package shown in that patent.
- the power module package 10 mounts a plurality of semiconductor chips constituting a power device 9 and a control device 8 on a lead frame 3 that has a heat sink I below the lead frame 3 .
- the package shown In FIG. 1 has two types of EMC.
- Reference numeral “2” represents a “lower EMC” having excellent thermal conductivity and ordinary electrical insulation and upper EMC 7 has ordinary thermal conductivity and excellent electrical insulation.
- the power circuit chip 4 a is mounted on one side of the lead frame 3 and a control integrated circuit chip 5 a is mounted on the same side of the lead frame 3 and spaced from the power chip 4 a.
- Reference numerals 5 b, 6 b and 6 a represent, respectively, a resistance component, a gold wire, and an aluminum wire.
- heat generated from the power circuit chip 5 a is mostly delivered to the heat sink 1 through lower EMC 2 and then to outside the power module package 10 through the heat sink 1 .
- the heat sink 1 is made of a metal having high thermal conductivity such as copper or aluminum.
- the lower EMC 2 should satisfy the following two conditions. First, heat transferred from the power circuit chip 4 a should be transferred quickly to the heat sink 1 . Second, the lead frame 3 should be electrically insulated from the heat sink 1 .
- the above United States Patent uses an EMC with high thermal conductivity for the lower EMC 2 .
- the EMC has high thermal conductivity, its thermal conductivity is 2 W/m ⁇ K, which is much less than the thermal conductivity of an aluminum heat sink 1 whose thermal conductivity is 100 W/m ⁇ K.
- the lower EMC 2 should be at least 500 ⁇ m thick or more so that the lead frame may be insulated from the heat sink 1 . If the EMC 2 is much thinner, then one or both devices 4 a, 5 a may short circuit to the heat sink 1 and damage or destroy the power module 10 . As such, the heat sinking ability of the power module package 10 is limited by the lower EMC 2 .
- the power module package 10 uses two EMCs 2 and 7 and each has different properties. Those skilled in the art understand that there is often a tradeoff between the electrical insulating ability of a molding compound and its thermal conductivity. In general, as one increases, the other decreases. So, in the package 10 that requires an EMC having high electrical insulation for the upper EMC, a two-stage molding process is performed. Accordingly, a manufacturing process of the power module package 10 is complex and costly.
- One way of solving the above problem and using only one EMC is shown in Korean Patent Publication No. 2002-0095053, filed by the same applicant as the present invention, and entitled “Power module package having improved heat emission capability and method thereof.”
- FIG. 2 herein illustrates a schematic, cross-sectional view of an example of the power module package 100 suggested by the above Korean Patent Publication.
- the power module package 100 mounts a power circuit element 120 and a control circuit element 130 , both on a first surface 111 of the lead frame 110 .
- the power circuit element 120 is mounted on a down-set (recessed) die pad 140 of the lead frame 110 .
- a heat sink 150 is attached to a second surface 112 of the down-set die pad 140 by a high temperature tape 160 .
- reference numerals 121 , 122 , 130 , 132 , and 170 represent one or more power circuit chips, an aluminum wire, a control circuit chip, a gold wire, and an EMC, respectively.
- a heat sink 150 made of ceramic is directly attached to a backside of a down-set die pad 140 by a high temperature tape 160 .
- the high temperature tape 160 can be as thin as about 50 ⁇ m. Since the sealing process for the power module package 100 is performed using only one EMC 170 , the manufacturing process for the package shown in FIG. 2 is simpler than the process for the package of FIG. 1 and the process to make the package of FIG. 2 can be automated to further reduce cost.
- the ceramic heat sink 150 has a thermal conductivity of about 24 W/ m ⁇ K, so that its heat sinking ability is not as good as metal, and further, ceramic is more expensive than metal. Still further, there is limit on how thin one can make a ceramic heat sink because ceramic is brittle and will crack if it is too thin.
- FIG. 3 illustrates a cross-sectional view of another example of a power module package 200 disclosed in the above-described Korean Patent Publication No. 2002-0095053.
- the power module package 200 uses a direct bonded copper (DBC) substrate 250 .
- the DBC substrate 250 includes: a ceramic plate 251 at the center; an upper copper layer 252 attached to an upper surface of the ceramic plate 251 ; and a lower copper layer 253 attached to a lower surface of the ceramic plate 251 .
- One or more power circuit chips 221 are mounted on the upper copper layer 252 and the lower copper layer 253 acts as a heat sink of the power module package 200 .
- Reference numerals 210 , 222 , and 270 represent a lead frame, an aluminum wire, and EMC, respectively.
- the upper and the lower copper layers 252 and 253 are directly attached to the ceramic plate 251 without using EMC (refer to the reference numeral 2 in FIG. 1 ) or a high temperature adhesive (refer to the reference numeral 160 in FIG. 2 ) and the heat dissipation capability of the heat sink 250 is excellent thanks to high thermal conductivity of copper. Further, since the copper layers 252 and 253 are attached to the upper and lower surfaces of the ceramic plate, problems caused by brittleness of the ceramic are overcome. Still further, since the encapsulation process for the power module package 200 is performed in a single transfer molding process using one EMC 270 , its manufacturing process can be simplified and automated to reduce costs.
- the ceramic plate 251 of DBC substrate 250 still has a lower thermal conductivity than metal and the ceramic plate 251 is still about 635 ⁇ m thick so that the manufacturing cost of the DBC process is high. As such, there is still substantial room for reducing the size and improving thermal dissipation ability of the power module package 200 .
- the present invention provides a power module package and a manufacturing method thereof, with excellent heat dissipation ability and a simpler and lower cost method of automated manufacture.
- a power module package and a manufacturing method thereof capable of reducing manufacturing costs and reducing the thickness of a substrate or a heat sink so that it has appropriate characteristics for a power module package.
- the invention includes a heat sink that has a core or central element made of metal and a one or more electrical insulating layers comprising a compound of the metal and one or more other elements, in particular, an oxide of the metal on the core or central element.
- a power module package which includes: a power circuit element; a control circuit element; a lead frame; a metal oxide substrate; and an EMC.
- the control circuit element is connected with the power circuit element to control operation of the power circuit element.
- the lead frame has external connection terminal leads in its edge and has a first surface to which the power circuit element and the control circuit element are attached and a second surface used to transfer heat away from the chips.
- a metal/metal oxide substrate e.g., an aluminum/aluminum oxide substrate acts as a heat sink and an insulation layer.
- the heat sink is a plate made of aluminum and the electrical insulating layer is formed at least on an upper surface of the heat sink and made of the aluminum oxide.
- the aluminum oxide layer is an electrical insulating layer that is affixed to the lead frame by an adhesive or other suitable means.
- the aluminum oxide layer covers all or at least part of the second surface of the lead frame below a region where the power circuit element is attached.
- the EMC encloses the power circuit element, the control circuit element, the lead frame, and the metal/metal oxide substrate and exposes the external connection terminal of the lead frame.
- a power module package which includes: a metal/metal oxide substrate; an upper wiring layer; external connection terminal leads; a power circuit element; a control circuit element; and an EMC.
- the metal/metal oxide substrate includes: a heat sink of a plate made of metal, e.g., aluminum and an electrical insulation layer formed at least on an upper surface of the heat sink and made of an oxide of the metal, in particular, aluminum oxide.
- An upper wiring layer has a wiring pattern and is directly attached to an upper surface of the insulation layer.
- the external connection terminal leads are connected at one of their ends with an edge of the wiring pattern of the upper wiring layer.
- the power circuit element is attached to a surface of the upper wiring layer adjacent the leads and is electrically connected with the external connection terminal leads by means of bond wires.
- the control circuit element is attached to a surface of the upper wiring layer and adjacent other external connection terminal leads.
- the control circuit element is electrically connected with the power circuit element and to the external connection terminal leads through a wiring bonding pattern to control the power circuit element(s).
- the EMC encloses the power circuit element(s), the control circuit element, the upper wiring layer, the metal oxide substrate, the inner ends of the external connection terminals, the internal bond wires, and exposes the outer ends of the external connection terminals.
- a power module package which includes: a metal/metal oxide substrate; a first wiring layer; a second wiring layer; external connection terminals; a power circuit element; a control circuit element; and an EMC.
- the metal/metal oxide substrate includes: an electrical insulation layer made of an oxide on a metal plate.
- a plurality of vias are made that comprise the metal within the electrical insulation layer. The vias pass through the insulation layer.
- a first wiring layer has a first wiring pattern connected with one end of the vias and is directly attached to a first surface of the metal/metal oxide substrate.
- the second wiring layer has a second wiring pattern connected to the other end of the vias and is directly attached to a second surface of the metal/metal oxide substrate.
- the external connection terminal leads are connected at their inner ends to an edge of the first wiring pattern of the first wiring layer.
- the power circuit element is attached to a surface of the second wiring layer and electrically connected with the via through the second wiring pattern.
- the control circuit element is attached to a surface of the first wiring layer between the external connection terminal leads and is electrically connected with the via and the external connection terminal leads through the first wiring pattern to control chips within the power circuit element.
- the EMC encloses the power circuit element, the control circuit element, the first wiring layer, the second wiring layer, the metal oxide substrate, and one end of the external connection terminals, exposing the other end of the external connection terminals.
- all or part of one surface of the electrical insulation layer of the heat sink may be exposed to an outside of the EMC.
- a power module package which includes: a metal/metal oxide substrate; a case; an upper wiring layer; external connection terminal leads; a power circuit element; a control circuit element; and silicone.
- the metal/metal oxide substrate includes: a heat sink of a plate made of metal and an electrical insulation layer formed at least on an upper surface of the heat sink and made of an oxide of the metal.
- the case includes: sidewalls with bottom edges attached to an edge of the metal oxide substrate and a cap connected between the top edges of the sidewalls so as to define a predetermined space between the sidewalls.
- the upper wiring layer has wiring pattern and is directly attached to an upper surface of the insulation layer between the sidewalls.
- the external connection terminal leads are connected at their inner ends with the wiring pattern of the upper wiring layer and are exposed at their outer ends for connection to the rest a device or system.
- the power circuit element is attached to a surface of the upper wiring layer and electrically connected with the external connection terminal leads through the wiring pattern.
- the control circuit element is attached to a surface of the upper wiring layer and electrically connected with the power circuit element and the external connection terminal leads through the wiring pattern to control the power circuit element.
- a silicone resin fills a space of the case so as to seal up the power circuit element, the control circuit element, and the upper wiring layer.
- a semiconductor package which includes: a metal/metal oxide substrate; a wiring pattern; an external connection pad; a semiconductor chip; and an EMC.
- the metal,/metal oxide substrate includes an insulation layer and vias made of an oxide of a plate-shaped metal and of the vias are made of the metal embedded in the insulation layer, and passing through the insulation layer.
- a wiring pattern is formed on the first surface of the metal oxide substrate and is connected with one of the ends of the vias.
- An external connection pad is formed on the second surface of the metal/metal oxide substrate and is connected with the other ends of the vias.
- the semiconductor chip e.g., a power circuit chip is electrically connected with the wiring pattern through a contact bump and is mounted on the first surface of the metal oxide substrate.
- EMC encloses the power chip and the first surface of the metal oxide substrate but exposes the second surface of the metal oxide substrate.
- a method for manufacturing a power module package in which: a lead frame having external connection terminals in its edge is provided, a heat sink of a plate made of metal is oxidized to form an electrical insulation layer on at least on an upper surface of the metal plate; a power circuit chip and a control chip are attached to a first surface of the lead frame; the lead frame is attached to the metal oxide substrate so that the insulation layer is affixed at least on a region of a second surface of the lead frame that corresponds to a region on the first surface where the power circuit element is attached; a wire bonding operation is performed to connect one or more power circuit chips and a control circuit chip; and encapsulating using an EMC to encapsulate the power circuit element(s), the control circuit element, the lead frame, and the metal/metal oxide substrate and expose the external connection terminal leads.
- a method for manufacturing a power module package in which: a metal/metal oxide substrate including a heat sink of a plate made of metal and an insulation layer formed at least on an upper surface of the metal plate heat sink and made of an oxide of the metal are prepared for attachment to the lead frame; an upper wiring layer having a wiring pattern is attached to an upper surface of the insulation layer; inner ends of external connection terminal leads are attached to an edge of the wiring pattern of the upper wiring layer; one or more power circuit chip(s) and a control circuit chip are attached to a surface of the upper wiring layer adjacent the inner ends of the external connection terminal leads; wire bonding is performed to connect the power circuit chip(s) and the control circuit chip; encapsulating using an EMC to enclose the power circuit element(s), the control circuit element, the upper wiring layer, the metal oxide substrate, and one end of the external connection terminals and expose the other end of the external connection terminals.
- FIG. 1 is a schematic, cross-sectional view of one example of a power module package according to a related art
- FIG. 2 is a schematic, cross-sectional view of another example of a power module package according to a related art
- FIG. 3 is a schematic, cross-sectional view of still another example of a power module package according to a related art
- FIG. 4 is a schematic, cross-sectional view of a power module package according to a first embodiment of the present invention
- FIG. 5 is a schematic, cross-sectional view of a power module package according to a second embodiment of the present invention.
- FIG. 6 is a schematic, cross-sectional view of a power module package according to a third embodiment of the present invention.
- FIG. 7 is a schematic, cross-sectional view of a modification of a power module package according to a third embodiment of the present invention.
- FIG. 8 is a schematic, cross-sectional view of a power module package according to a fifth embodiment of the present invention.
- FIG. 9 is a schematic, cross-sectional view of one example of a semiconductor package according to the present invention.
- FIGS. 10A through 10D are cross-sectional views explaining a method for manufacturing a power module package according to an embodiment of the present invention.
- FIG. 11 is a flowchart explaining a method for manufacturing a power module package according to another embodiment of the present invention.
- FIG. 4 is a schematic, cross-sectional view of a power module package according to a first embodiment of the present invention.
- a power module package 300 includes: a lead frame 310 ; a power circuit element 320 ; a control circuit element 330 ; a metal/metal oxide substrate 350 , 355 ; and an EMC 370 .
- the power circuit element 320 includes one or more power circuit chips 321 with aluminum wire 322 to connect the chips 321 to the leads of the lead frame.
- the aluminum wire 322 has a diameter of about 250-500 ⁇ m to endure a high rated current.
- the control circuit element 330 includes a control circuit chip 331 and a gold wire 332 .
- the aluminum wires 322 and the gold wires 332 properly connect the power circuit chip(s) 321 and the control circuit chip 331 , respectively to the leads of the lead frame 310 that extend from inside the package 300 to the outside.
- the lead frame 310 has a thickness of about 0.5-1 mm and has a first surface 311 on which the circuit elements are attached and a second surface 312 which is opposite to the first surface. External connection terminal leads are formed at an edge of the lead frame 310 .
- the external connection terminal leads have inner ends adjacent to the circuit elements and outer ends that protrude through the EMC 370 .
- a down-set die pad 340 is formed at a central portion.
- the circuit elements 320 and 330 may be attached to a die pad in the same plane as the leads or to a down-set die pad, such as die pad 340 .
- the down-set die pad 340 may be positioned on a symmetric central point or may be formed at an eccentric position.
- the power circuit element 320 and the control circuit element 330 are attached to the first surface 311 of the lead frame. Particularly, the power circuit element 320 which generates most of the heat is attached to the first surface 311 of the down-set die pad 340 of the lead frame 310 .
- the metal oxide substrate 350 , 355 is attached by an adhesive 360 to the second surface 312 of the lead frame 310 at a location that corresponds to the region on the first surface where the power circuit element 320 is attached. As illustrated in FIG. 4 , the metal oxide substrate 350 and 355 may be attached to the second surface 312 of the down-set die pad 340 of the lead frame 310 .
- the adhesive 360 is an epoxy adhesive or silicone elastomer.
- a filler having excellent thermal conductivity and substantial electric insulation may be dispersed in the adhesive 360 .
- aluminum nitride (AlN), aluminum oxide (Al 2 O 3 ), beryllium oxide (BeO), silicon oxide (SiO 2 ), or combination thereof may be used.
- a high temperature tape or solder for a high temperature may be used, such as Pb/Sn, Sn/Ag, Pb/Sn/Ag.
- the adhesive 360 may be formed thin within a thickness of about 10-20 ⁇ m so that thermal conductive efficiency will not deteriorate but the thickness of the adhesive 360 is not limited to that thickness.
- the metal/metal oxide substrate 350 , 355 includes a heat sink 350 and an insulation layer 355 made of an oxide of the metal of the heat sink 350 .
- the heat sink 350 effectively conducts heat generated from the power circuit element 320 to the outside of the package 300 .
- material having an excellent conductivity is used and aluminum having a thermal conductivity of about 100-130 W/m ⁇ K is preferred.
- thickness of the heat sink 350 and the thickness can be modified in various ways depending on a purpose of the power module package 300 . Of course, other metal and metal oxide combinations are possible, e.g. Si and SiO 2
- the electrical insulation layer 355 should not only electrically insulate the lead frame 310 from the heat sink but also guarantee rapid heat transmission to the heat sink 350 . Therefore, the layer 355 may be made of material having an excellent thermal conductivity and showing a sufficient electrical insulating ability that it can be made as thin as possible.
- the insulation layer 355 is made of an oxide of metal of the heat sink 350 such as an aluminum oxide.
- the aluminum oxide insulation layer 355 has a thermal conductivity of about 20 W/m ⁇ K, which is greater than the thermal conductivity the lower EMC 2 (in FIG. 1 ) or the adhesive 360 . Further, the aluminum oxide insulation layer 355 has an excellent electric insulation property as does ceramic material.
- the insulation layer particularly, an insulation layer 355 a interposed between the lead frame 310 and the heat sink 350 can display a full electrical insulating effect even with a thickness of only about 30-50 ⁇ m.
- the thickness of the insulation layer 355 a may change depending on electric properties of the application apparatus for which the power module package 300 is used.
- the electrical insulation layer 355 is formed at least on an upper surface of the heat sink 350 .
- the insulation layer 355 may be formed on only an upper surface of the heat sink 350 (refer to the reference numeral 355 a ), or may be formed on only an upper and a lower surfaces of the heat sink 350 (refer to the reference numerals 355 a and 355 b ), or may be formed over an entire surface of the heat sink 350 (refer to the reference numerals 355 a, 355 b, 355 c ).
- the metal/metal oxide substrate 355 may be formed by anodizing metal 350 that would be used as the heat sink 350 .
- the EMC 370 is intended to maintain an electrical insulation state between the elements 320 and 330 by isolating the power circuit element 320 and the control circuit element 330 from each other and by isolating both of them from the outside.
- the EMC 370 may be formed using an epoxy molding compound having an excellent insulating property. In that case, the EMC 370 encloses the power circuit element 320 , the control circuit element 330 , the lead frame 310 , and metal oxide substrate 350 and 355 , exposing the outer ends of external connection terminal leads of the lead frame 310 . To improve a heat transmission, the EMC 370 may expose one side of the metal/metal oxide substrate 355 to the outside.
- the power module package 300 has an aluminum heat sink which has an excellent heat conductivity and the aluminum oxide which has relatively good thermal conductivity and electrically insulates the aluminum 350 from the lead frame 310 .
- FIGS. 10A through 10D are cross-sectional views explaining an example of a method for manufacturing a power module package 300 according to a first embodiment of the present invention.
- a lead frame 310 having a thickness of about 0.5-1.0 mm is prepared.
- Power circuit chip(s) 321 and a control circuit chip 331 are attached to a surface of the lead frame 310 through a die attach operation.
- the power circuit chip(s) 321 are attached to a down-set die pad portion 340 of the lead frame 310 .
- the die attach operation can be performed using solder or using silver epoxy. When solder is used for an adhesive (not shown), the die attach operation is performed within a temperature range of about 350-380° C., a pressure range of about 3-5 kg/cm , and in a hydrogen atmosphere. When silver epoxy is used for an adhesive, the die attach operation is performed at room temperature and at a pressure range of 1-2 kg/cm 2 .
- an adhesive 360 such as an epoxy or a silicone elastomer, including a filler is attached to an upper surface of the insulation layer 355 a.
- the aluminum/aluminum oxide substrate 355 is attached to the lower surface of lead frame 310 , at a position below the location where power circuit chip(s) 321 are attached to the upper surface, using the epoxy 360 including the filler for an adhesive.
- the above attach operation may be performed under a temperature range of about 150-180° C. and a pressure range of 0.5-1.0 kg/cm 2 for about 3-5 minutes but is not limited to those specific ranges.
- an aluminum (Al) wire bonding operation and a gold (Au) wire bonding operation are performed so that the power circuit chip 321 is electrically connected with the lead frame 310 and the power circuit chips 321 are electrically connected each other, and the control circuit chip 330 is electrically connected with the lead frame 310 .
- a gold wire is used as a wire for the control circuit chip 330 and an aluminum wire is used as a wire for the power circuit chip 321 .
- the aluminum wire bonding operation is performed using a wedge bonding method and the gold wire bonding operation is performed using a ball bonding method.
- the aluminum wire 332 is bonded first and subsequently the gold wire 332 is bonded.
- an encapsulation operation such as a transfer molding method is performed to enclose the circuit elements 320 and 330 so that only a lower surface of the aluminum/aluminum oxide substrate 355 and the outer ends of the leads may be exposed.
- general subsequent operations such as a trimming and a forming are performed.
- FIG. 5 is a cross-sectional view of a power module package according to a second embodiment of the present invention.
- the power module package 400 of the present embodiment is different from the power module package 200 of the prior art in that it uses the metal/metal oxide substrate 455 having an upper wiring layer 452 on its upper part, not the DBC substrate (refer to a reference numeral 250 in FIG. 3 ) including ceramic.
- a difference between the power module package 300 of the above-described first embodiment and that of the related art will be described in more detail.
- the power module package 400 includes: a lead frame 410 ; one or more power circuit elements 420 ; a control circuit element 430 ; an upper wiring layer 452 ; an aluminum/aluminum oxide substrate 455 ; and an EMC 470 .
- the power circuit element(s) 420 include power circuit chips 421 and aluminum/gold wire 422 .
- the control circuit element 430 includes a control circuit chip 431 and aluminum/gold wire 432 .
- the aluminum/aluminum oxide substrate 450 , 455 includes heat sink 450 and an insulation layer 455 a formed at least on an upper surface of the heat sink 450 . As illustrated in FIG. 5 , the insulation layer 455 a may be formed over an entire surface of the heat sink 450 . See layer 455 b (lower) and 455 c (sidewalls).
- the upper wiring layer 452 has a wiring pattern for leads (not shown) and regions between leads are filled with insulating material.
- the insulating material may be part of the EMC 470 .
- the power circuit chip 421 and the control circuit chip 431 are attached to a surface of the upper wiring layer 452 and the aluminum/gold wire 422 and the aluminum/gold wire 432 are connected to the leads of the wiring pattern of the upper wiring layer 452 .
- the upper wiring layer 452 is directly attached to a surface of the upper insulating layer 455 a of the aluminum oxide layer 455 .
- the wiring pattern of the upper wiring layer 452 connects the power circuit elements 420 , connects the lead frame 410 with the power circuit element 420 , and electrically connects the power circuit element with the control circuit element 430 .
- the heat sink 450 has excellent thermal conductivity and acts as a heat sink and the aluminum oxide 455 a , 455 b, 455 c is an excellent thermal conductor and a relatively excellent electric insulator. Further, the upper wiring layer 452 is directly attached to a surface of the upper insulation layer 455 a of the metal/metal oxide substrate 455 to that heat transmission is increased even more.
- FIG. 11 is a flowchart explaining an example of a method for manufacturing a power module package according to a second embodiment of the present invention.
- the aluminum/aluminum oxide substrate 455 is prepared (S 21 ).
- the aluminum/aluminum oxide substrate 455 includes the heat sink 450 and at least one insulation layer 455 a made of the aluminum oxide and formed at least on an upper surface of the heat sink 450 .
- the insulation layer 455 a may be formed over an entire surface of the heat sink 450 .
- the aluminum/aluminum oxide substrate 455 may be manufactured by performing a general aluminum oxidation operation known or anodizing. Such anodizing processes are well known.
- the upper wiring layer 452 is directly formed on the insulation layer 455 a (S 22 ).
- the upper wiring layer 452 may be formed on the aluminum oxide layer 455 by a lamination method using Cu, Cu/Ni, Cu/Au, or Cu/Ni/Au, or a sputtering method using the above metal.
- the upper wiring layer 452 has a properly-shaped wiring pattern for electric connection.
- the external connection terminal lead has its inner ends attached to an edge of the upper wiring layer 452 (S 23 ).
- This attach operation may be performed using an adhesive such as solder or a thermal tape, laser or spot welding, or using a thermal fusion method using silver (Ag) or silver (Ag)/stannurn (Sn) plating.
- the power circuit chip 421 and the control circuit chip 431 are attached to a surface of the upper wiring layer 452 .
- the operation for attaching those chips 421 and 431 can be performed using solder and silver epoxy.
- solder is used. In that case, the attach operation is performed within a temperature range of about 330-360° C.
- silver epoxy is used for attaching the control circuit chip 431 . In that case, the attach operation is performed under a room temperature.
- the wire bonding operation is performed (S 24 ).
- an aluminum wire is used, and for the control circuit chip 431 , a gold wire is used.
- the wire bonding operation may be performed in the same way as the wire bonding operation of the above-described manufacturing operation. As a result, the chips 421 and 431 are electrically connected with the wiring pattern of the upper wiring layer 452 .
- an encapsulation operation such as a molding operation is performed using the EMC 470 (S 25 ).
- a transfer molding method may be used.
- general trimming and forming operations are performed (S 26 ), the power module package 400 as illustrated in FIG. 5 is completed.
- FIG. 6 is a cross-sectional view of a power module package according to a third embodiment 500 of the present invention.
- a power module package 500 includes metal/metal oxide substrate 550 , 558 , a first wiring layer 552 a, a second wiring layer 552 b, external connection terminals 510 , a power circuit element 520 , a control circuit element 530 ; and an EMC 570 .
- the power module package 500 according to the third embodiment is characterized by having a metal oxide substrate 550 with vias 558 where the vias 558 pass through an insulation layer 550 to electrically connect the first wiring layer 552 a with the second wiring layer 552 b.
- the metal/metal oxide substrate 550 , 558 has an aluminum oxide substrate 550 that has a planar configuration with a plurality of conductive vias 558 in the substrate 550 .
- the vias 558 pass through the insulation layer 550 .
- the conductive vias 558 may be formed using metal, e.g., aluminum.
- the aluminum/aluminum oxide substrate 550 , 558 may be manufactured by masking the via regions and oxidizing the rest of an aluminum metal plate. The unmasked portions will remain as aluminum.
- the first wiring layer 552 a includes a first wiring pattern (not shown) and the first wiring pattern is connected to one of the ends of vias 558 .
- the first wiring pattern could be electrically connected with a control circuit chip 531 through external connection terminals of the control circuit chip 531 , such as a bump 532 .
- the control circuit element 530 including the control circuit chip 531 and the external connection terminals 532 are attached to a surface of the first wiring layer 552 a.
- the second wiring layer 552 b includes a second wiring pattern (not shown) and the second wiring pattern is connected with the other ends of the vias 558 .
- the second wiring pattern could be electrically connected with the power circuit chip 521 through an external connection terminal of the power circuit chip 521 , such as an aluminum wire 522 .
- the power circuit element 520 including the power circuit chip 521 and the external connection terminal 522 is attached to a surface of the second wiring layer 552 b.
- the external connection terminal 510 of the power module package 500 is attached to an edge of the first wiring layer 552 a that is electrically connected with the first wiring pattern.
- the external connection terminal 510 may be attached to an edge of the second wiring layer 552 b to be electrically connected with the second wiring pattern.
- the power module package 500 dissipates less heat than the power module packages 300 and 400 according to the above-described first and second embodiments. However, since the chips 521 and 531 are mounted on both sides of the aluminum oxide substrate 550 and 558 , module 500 has a smaller size than modules 300 and 400 . Further, since the oxidized aluminum insulation layer 550 has better heat conductivity than the printed circuit boards (PCB) that are often used in a power module semiconductor package, it can be appropriately used as a power module for an application apparatus of relatively low power.
- PCB printed circuit boards
- FIG. 7 is a cross-sectional view of a power module package 600 according to a fourth embodiment of the present invention.
- the package 600 is a modification of the third embodiment, package 500 .
- a power module package 600 includes metal/metal oxide substrate 650 , 658 , a first wiring layer 652 a, a second wiring layer 652 b , external connection terminals 610 , a power circuit element 620 , a control circuit element 630 , and an EMC 670 .
- the power module package 600 according to the fourth embodiment is different from the power module package 500 of the third embodiment in that part of surface 650 a of the metal oxide substrate 650 is exposed outside of the EMC 670 .
- the power module package 500 according to the third embodiment with the insulation layer 550 has excellent thermal conductivity, the entire surface of the insulation layer 550 is enclosed by the EMC 570 . Accordingly, when the power module package 500 according to the third embodiment is used for a long time, its heat dissipation deteriorates. On the contrary, because the power module package 600 of the fourth embodiment exposes part 650 a of the surface of the insulation layer 650 , its heat dissipation efficiency is better than the power module package 500 of the third embodiment.
- opposite ends of the insulation layer 650 are bent vertically downward so that the left and right parts 650 a of the surface of the electrical insulation layer 650 may be exposed to the outside.
- the illustrated shape of the electrical insulation layer 650 is a mere example.
- the electrical insulation layer 650 may have a bent portion forming an angle greater or smaller than 90° or may have a straight portion with no bent portion.
- FIG. 8 is a cross-sectional view of a power module package 700 according to a fifth embodiment of the present invention.
- the power module package 700 includes metal/metal oxide substrates 750 , 755 , a case 780 , an upper wiring layer 752 , external connection terminals 710 , a power circuit element 720 , a control circuit element 730 , and a silicone resin 770 .
- the power module package 700 according to the fifth embodiment is similar in its structure to the power module package 400 of the second embodiment except for the following differences.
- Package 700 uses a silicone resin instead of an epoxy resin as an encapsulating resin 770 because the power module package 700 of the present embodiment is so large in its package area that the molding operation cannot be performed using the epoxy resin.
- case 780 is provided so that a frame of the silicone resin may be maintained.
- the case 780 can be manufactured using plastics.
- the case 780 includes sidewalls 721 - 724 and a cap 720 and the sidewalls are attached at their bottom ends to an edge of the metal oxide substrates 750 and 755 .
- the cap 720 is connected between the sidewalls 721 - 724 to define a predetermined space between the sidewalls and the predetermined space is filled with the silicone resin 770 .
- the case 780 may be attached to a surface of the metal oxide substrates 750 and 755 using an adhesive or may be fastened to the surface of the metal/metal oxide substrates 750 , 755 by inserting a fastening member such as a bolt into locking holes 782 formed on the metal oxide substrates 750 and 755 and the case 780 , respectively.
- a plurality of external connection terminals 710 pass through the case 780 and are electrically connected to the upper wiring layer 752 .
- the power module package 700 may house a high power device, such as an insulated gate bipolar transistor (IGBT).
- IGBT insulated gate bipolar transistor
- the power module package 700 is useful where the power device generates high heat.
- the power module package 700 of the present embodiment having the aluminum/aluminum oxide substrates 750 , 755 overcome the brittleness problem of the power module package having the DBC substrate including a ceramic plate.
- FIG. 9 is a cross-sectional view of one example of a semiconductor package 800 according to a sixth embodiment of the present invention.
- a semiconductor package 800 includes aluminum/aluminum oxide substrate 855 , 858 , a wiring pattern 852 a, external connection pads 852 b, a semiconductor element 830 , and a sealing resin 870 .
- the semiconductor package 800 according to the sixth embodiment is similar in its structure to a flip chip semiconductor package.
- aluminum/aluminum oxide substrate 855 , 858 includes an electrical insulation layer 855 made of a plate of aluminum oxide and a plurality of vias 858 made of non-oxidized aluminum that pass through the insulation layer 855 .
- the aluminum/aluminum oxide substrate 855 , 858 can be formed by masking an aluminum plate and oxidizing the opposed aluminum to create the vias 858 .
- the wiring pattern 852 a connected with one end of the vias 858 is formed on a first surface of the aluminum/aluminum oxide substrate 855 , 858 .
- a semiconductor chip 831 is mounted on the first surface and electrically connected with the wiring pattern 852 a through the bump 832 .
- a solder resist 854 may be spread between the wiring patterns 852 a.
- the external connection pads 852 b connected with the other end of the via 858 is formed on a second surface of the aluminum/aluminum oxide substrate 855 , 858 , which is an opposite side of the first surface.
- a solder resist may be also spread between the external connection pads 852 b.
- the external connection pads 852 b are attached to a mother substrate (not shown) using solder.
- the semiconductor package having the aluminum/aluminum oxide substrate has a better heat transmission compared with the semiconductor package that uses a general PCB.
- the power module package having the metal oxide substrate according to the present invention uses metal having an excellent thermal conductivity as a heat sink and uses an oxide of the metal as an electrical insulation layer so that the heat sink may be electrically insulated.
- the electrical insulation layer made of the oxide of such metal not only has a better thermal conductivity than the EMC resin but also shows a sufficient insulation effect in case of forming a thickness of the insulation layer thin. Therefore, according to the present invention, it is possible to manufacture the power module package having an excellent heat emission property.
- the metal/metal oxide substrate provided to the power module package of the present invention can be manufactured by oxidizing a metal, the package can be easily realized and manufacturing cost is reduced. It is not necessary to perform the two-stage molding operation using two sealing resins having different properties as was done in the prior art. Instead, the molding operation is performed using one sealing resin, so that the manufacturing process is less complex and may be automated.
- the present invention it is possible to use the aluminum/aluminum oxide substrate having various thickness depending on power capacity applied to the power module package and to modify its structure in various ways. Therefore, the power module package of the present invention can be applied to a package module having various power capacities.
- Metal substrates with hard oxide metal coatings may be made by one or more processes.
- Aluminum is typically anodized to provide a hard, almost crystalline structure of aluminum oxide on the surface of the aluminum.
- the oxide is tightly formed and becomes, in effect, a barrier to entry of other materials.
- Anodizing involves the immersion of the part in an electrolyte solution while a current is passed through the solution and the part. As oxygen is formed on the anode (the positive terminal which is the part) it reacts with the part to form a thin layer of aluminum oxide on the surface. After anodizing the part can be soaked in dye which penetrates the still porous (relatively) layer of aluminum oxide. The final step is sealing the oxide layer by immersion in boiling water. Further details are found in Electrochemistry Encyclopedia, http:electrochem.cwru.edu/ed/encycl/art-a02-anodizing.htm. Its entire disclosure is hereby incorporated by reference.
- Anodizing aluminum or other metals provides a hard, thin barrier oxide layer that has many advantages.
- the barrier oxide layer is usually electrically insulating and has a relatively high dielectric constant compared to the metal from which it is formed.
- Aluminum oxide does not have the high thermal conductivity of aluminum. However, the rate of heat dissipation depends not only on the inherent conductivity of a material, but also its thickness. Since the layer of aluminum oxide needed for electrical insulation is relatively thin when compared to the aluminum heat sink, the thin aluminum oxide layer does not materially impair the overall thermal conductivity of the aluminum/aluminum oxide substrate. In a typical embodiment of the invention, the ratio of aluminum to aluminum oxide is about 10 to 1.
- Hard, barrier oxide may also be created with silicon. It is also well known that silicon will oxidize to provide an oxide layer on the surface of silicon. This native oxide of silicon is one of its many advantages in forming integrated circuits. The silicon oxidation process proceeds in a diffusion-like matter so that oxygen atoms attach to silicon atoms and thus will take on the corresponding structure of the silicon substrate. If the substrate is crystalline or polycrystalline, the silicon dioxide layer will have a similar surface. Silicon dioxide is a common dielectric in semiconductor applications.
Abstract
A power module package includes a power circuit element, a control circuit element, a lead frame, an aluminum oxide substrate having a heat sink and an insulation layer, and a sealing resin. The control circuit element is electrically connected with the power circuit element to control chips within the power circuit element. The lead frame has external connection terminal leads in its edge and has a first surface to which the power circuit element and the control circuit element are attached and a second surface which is used as a heat transmission path. The heat sink is a plate made of metal such as aluminum and the electrical insulation layer is formed at least on an upper surface of the heat sink and made of aluminum oxide. The electrical insulation layer may be formed over an entire surface of the heat sink. Here, the insulation layer is attached to the second surface by an adhesive, on a region below where the power circuit element is attached, to the first surface of the lead frame. In addition, the sealing resin encloses the power circuit element and the control circuit element, the lead frame, and the metal oxide substrate and exposes the external connection terminals of the lead frame.
Description
- This application is a continuation of U.S. patent application Ser. No. 11/208,385 filed Aug. 19, 2005 which claims priority to Korean Patent Application No. 2004-66176, filed on Aug. 21, 2004, in the Korean Intellectual Property Office. This application is also a continuation-in-part of U.S. patent application Ser. No. 10/167,067, filed Oct. 26, 2004, now U.S. Pat. No. 7,061,080, which claims priority to Korean Patent Application No. 2002-20779, filed on Apr. 17, 2002 in the Korean Intellectual Property Office and Korean Patent Application No. 2001-32489, filed on Jun. 11, 2001, in the Korean Intellectual Property Office. All of the above-listed applications are hereby incorporated by reference in their entirety.
- 1. Field of the Invention
- The present invention relates to a semiconductor package, and more particularly, to a power module package having excellent heat transfer characteristics .
- 2. Description of the Related Art
- Generally, a semiconductor package is manufactured in the following way: one or more semiconductor chips, such as power semiconductor devices or integrated circuits, are mounted on a lead frame or a printed circuit board (PCB), then sealed with an epoxy molding compound (EMC) for protecting the chips, and the packaged chips are mounted on a mother board or a PCB for a system. As used hereinafter the word “chip” means a semiconductor power device or a semiconductor integrated circuit. A semiconductor power device may be a single power transistor or one or more power transistors including one or more transistors for controlling or monitoring operation of the power transistors.
- While integrated circuits and other electronic apparatus have long experienced demands for high speed, high capacity, and high levels of integration, now power devices such as those applied to automobiles, industrial apparatus, and home appliances are also confronting similar demands for reduced size, lower weight and low cost. One way of resolving these demands is to construct a power module package that contains two or more semiconductor chips in a single semiconductor package. Such power module packages include one or more power circuit chips and a control circuit chip. But power circuit chips generate much more heat than the heat generated by integrated circuits or control chips. Therefore, effectively transferring heat from the chips to outside the package is critical for maintaining high reliability for a long time for such power modules.
- The U.S. Pat. No. 5,703,399 by Majumdar, entitled “Semiconductor power module” discloses a power module package having a heat sink and
FIG. 1 herein illustrates a cross-sectional view of the power module package shown in that patent. Referring toFIG. 1 , thepower module package 10 mounts a plurality of semiconductor chips constituting apower device 9 and a control device 8 on a lead frame 3 that has a heat sink I below the lead frame 3. The package shown InFIG. 1 has two types of EMC. Reference numeral “2” represents a “lower EMC” having excellent thermal conductivity and ordinary electrical insulation andupper EMC 7 has ordinary thermal conductivity and excellent electrical insulation. Thepower circuit chip 4 a is mounted on one side of the lead frame 3 and a control integratedcircuit chip 5 a is mounted on the same side of the lead frame 3 and spaced from thepower chip 4 a.Reference numerals power module package 10 having the construction as described above, heat generated from thepower circuit chip 5 a is mostly delivered to theheat sink 1 throughlower EMC 2 and then to outside thepower module package 10 through theheat sink 1. According to the above United States Patent, theheat sink 1 is made of a metal having high thermal conductivity such as copper or aluminum. - When, as in the
package 10 where the heat sink I is manufactured using electrically conductive material such as metal, thelower EMC 2 should satisfy the following two conditions. First, heat transferred from thepower circuit chip 4 a should be transferred quickly to theheat sink 1. Second, the lead frame 3 should be electrically insulated from theheat sink 1. - To satisfy these conditions, the above United States Patent uses an EMC with high thermal conductivity for the
lower EMC 2. However, even though the EMC has high thermal conductivity, its thermal conductivity is 2 W/m·K, which is much less than the thermal conductivity of analuminum heat sink 1 whose thermal conductivity is 100 W/m·K. In order to provide sufficient electrical insulation between theheat sink 1 and the lead frame 3, thelower EMC 2 should be at least 500 μm thick or more so that the lead frame may be insulated from theheat sink 1. If the EMC 2 is much thinner, then one or bothdevices heat sink 1 and damage or destroy thepower module 10. As such, the heat sinking ability of thepower module package 10 is limited by thelower EMC 2. - The
power module package 10 uses twoEMCs package 10 that requires an EMC having high electrical insulation for the upper EMC, a two-stage molding process is performed. Accordingly, a manufacturing process of thepower module package 10 is complex and costly. One way of solving the above problem and using only one EMC is shown in Korean Patent Publication No. 2002-0095053, filed by the same applicant as the present invention, and entitled “Power module package having improved heat emission capability and method thereof.”FIG. 2 herein illustrates a schematic, cross-sectional view of an example of thepower module package 100 suggested by the above Korean Patent Publication. - Referring to
FIG. 2 , thepower module package 100 mounts apower circuit element 120 and acontrol circuit element 130, both on afirst surface 111 of thelead frame 110. Thepower circuit element 120 is mounted on a down-set (recessed)die pad 140 of thelead frame 110. Aheat sink 150 is attached to asecond surface 112 of the down-setdie pad 140 by ahigh temperature tape 160. InFIG. 2 ,reference numerals - In the
power module package 100, aheat sink 150 made of ceramic is directly attached to a backside of a down-setdie pad 140 by ahigh temperature tape 160. Thehigh temperature tape 160 can be as thin as about 50 μm. Since the sealing process for thepower module package 100 is performed using only one EMC 170, the manufacturing process for the package shown inFIG. 2 is simpler than the process for the package ofFIG. 1 and the process to make the package ofFIG. 2 can be automated to further reduce cost. - However, the
ceramic heat sink 150 has a thermal conductivity of about 24 W/ m·K, so that its heat sinking ability is not as good as metal, and further, ceramic is more expensive than metal. Still further, there is limit on how thin one can make a ceramic heat sink because ceramic is brittle and will crack if it is too thin. -
FIG. 3 illustrates a cross-sectional view of another example of apower module package 200 disclosed in the above-described Korean Patent Publication No. 2002-0095053. Referring toFIG. 3 , thepower module package 200 uses a direct bonded copper (DBC)substrate 250. TheDBC substrate 250 includes: aceramic plate 251 at the center; anupper copper layer 252 attached to an upper surface of theceramic plate 251; and alower copper layer 253 attached to a lower surface of theceramic plate 251. One or morepower circuit chips 221 are mounted on theupper copper layer 252 and thelower copper layer 253 acts as a heat sink of thepower module package 200.Reference numerals - According to the
power module package 200, the upper and thelower copper layers ceramic plate 251 without using EMC (refer to thereference numeral 2 inFIG. 1 ) or a high temperature adhesive (refer to thereference numeral 160 inFIG. 2 ) and the heat dissipation capability of theheat sink 250 is excellent thanks to high thermal conductivity of copper. Further, since thecopper layers power module package 200 is performed in a single transfer molding process using one EMC 270, its manufacturing process can be simplified and automated to reduce costs. - However, the
ceramic plate 251 ofDBC substrate 250 still has a lower thermal conductivity than metal and theceramic plate 251 is still about 635 μm thick so that the manufacturing cost of the DBC process is high. As such, there is still substantial room for reducing the size and improving thermal dissipation ability of thepower module package 200. - The present invention provides a power module package and a manufacturing method thereof, with excellent heat dissipation ability and a simpler and lower cost method of automated manufacture.
- According to one aspect of the present invention, there is provided a power module package and a manufacturing method thereof, capable of reducing manufacturing costs and reducing the thickness of a substrate or a heat sink so that it has appropriate characteristics for a power module package. The invention includes a heat sink that has a core or central element made of metal and a one or more electrical insulating layers comprising a compound of the metal and one or more other elements, in particular, an oxide of the metal on the core or central element.
- According to another aspect of the present invention, there is provided a power module package, which includes: a power circuit element; a control circuit element; a lead frame; a metal oxide substrate; and an EMC. The control circuit element is connected with the power circuit element to control operation of the power circuit element. The lead frame has external connection terminal leads in its edge and has a first surface to which the power circuit element and the control circuit element are attached and a second surface used to transfer heat away from the chips. A metal/metal oxide substrate, e.g., an aluminum/aluminum oxide substrate acts as a heat sink and an insulation layer. The heat sink is a plate made of aluminum and the electrical insulating layer is formed at least on an upper surface of the heat sink and made of the aluminum oxide. The aluminum oxide layer is an electrical insulating layer that is affixed to the lead frame by an adhesive or other suitable means. The aluminum oxide layer covers all or at least part of the second surface of the lead frame below a region where the power circuit element is attached. The EMC encloses the power circuit element, the control circuit element, the lead frame, and the metal/metal oxide substrate and exposes the external connection terminal of the lead frame.
- According to further another aspect of the present invention, there is provided a power module package, which includes: a metal/metal oxide substrate; an upper wiring layer; external connection terminal leads; a power circuit element; a control circuit element; and an EMC. The metal/metal oxide substrate includes: a heat sink of a plate made of metal, e.g., aluminum and an electrical insulation layer formed at least on an upper surface of the heat sink and made of an oxide of the metal, in particular, aluminum oxide. An upper wiring layer has a wiring pattern and is directly attached to an upper surface of the insulation layer. The external connection terminal leads are connected at one of their ends with an edge of the wiring pattern of the upper wiring layer. The power circuit element is attached to a surface of the upper wiring layer adjacent the leads and is electrically connected with the external connection terminal leads by means of bond wires. The control circuit element is attached to a surface of the upper wiring layer and adjacent other external connection terminal leads. The control circuit element is electrically connected with the power circuit element and to the external connection terminal leads through a wiring bonding pattern to control the power circuit element(s). The EMC encloses the power circuit element(s), the control circuit element, the upper wiring layer, the metal oxide substrate, the inner ends of the external connection terminals, the internal bond wires, and exposes the outer ends of the external connection terminals.
- According to still further another aspect of the present invention, there is provided a power module package, which includes: a metal/metal oxide substrate; a first wiring layer; a second wiring layer; external connection terminals; a power circuit element; a control circuit element; and an EMC. The metal/metal oxide substrate includes: an electrical insulation layer made of an oxide on a metal plate. A plurality of vias are made that comprise the metal within the electrical insulation layer. The vias pass through the insulation layer. A first wiring layer has a first wiring pattern connected with one end of the vias and is directly attached to a first surface of the metal/metal oxide substrate. The second wiring layer has a second wiring pattern connected to the other end of the vias and is directly attached to a second surface of the metal/metal oxide substrate. The external connection terminal leads are connected at their inner ends to an edge of the first wiring pattern of the first wiring layer. The power circuit element is attached to a surface of the second wiring layer and electrically connected with the via through the second wiring pattern. The control circuit element is attached to a surface of the first wiring layer between the external connection terminal leads and is electrically connected with the via and the external connection terminal leads through the first wiring pattern to control chips within the power circuit element. The EMC encloses the power circuit element, the control circuit element, the first wiring layer, the second wiring layer, the metal oxide substrate, and one end of the external connection terminals, exposing the other end of the external connection terminals.
- According to one aspect of the above-described embodiment, all or part of one surface of the electrical insulation layer of the heat sink may be exposed to an outside of the EMC.
- According to another aspect of the present invention, there is provided a power module package, which includes: a metal/metal oxide substrate; a case; an upper wiring layer; external connection terminal leads; a power circuit element; a control circuit element; and silicone. The metal/metal oxide substrate includes: a heat sink of a plate made of metal and an electrical insulation layer formed at least on an upper surface of the heat sink and made of an oxide of the metal. The case includes: sidewalls with bottom edges attached to an edge of the metal oxide substrate and a cap connected between the top edges of the sidewalls so as to define a predetermined space between the sidewalls. The upper wiring layer has wiring pattern and is directly attached to an upper surface of the insulation layer between the sidewalls. The external connection terminal leads are connected at their inner ends with the wiring pattern of the upper wiring layer and are exposed at their outer ends for connection to the rest a device or system. The power circuit element is attached to a surface of the upper wiring layer and electrically connected with the external connection terminal leads through the wiring pattern. The control circuit element is attached to a surface of the upper wiring layer and electrically connected with the power circuit element and the external connection terminal leads through the wiring pattern to control the power circuit element. A silicone resin fills a space of the case so as to seal up the power circuit element, the control circuit element, and the upper wiring layer.
- According to another aspect of the present invention, there is provided a semiconductor package, which includes: a metal/metal oxide substrate; a wiring pattern; an external connection pad; a semiconductor chip; and an EMC. The metal,/metal oxide substrate includes an insulation layer and vias made of an oxide of a plate-shaped metal and of the vias are made of the metal embedded in the insulation layer, and passing through the insulation layer. A wiring pattern is formed on the first surface of the metal oxide substrate and is connected with one of the ends of the vias. An external connection pad is formed on the second surface of the metal/metal oxide substrate and is connected with the other ends of the vias. The semiconductor chip, e.g., a power circuit chip is electrically connected with the wiring pattern through a contact bump and is mounted on the first surface of the metal oxide substrate. EMC encloses the power chip and the first surface of the metal oxide substrate but exposes the second surface of the metal oxide substrate.
- According to another aspect of the present invention, there is provided a method for manufacturing a power module package, in which: a lead frame having external connection terminals in its edge is provided, a heat sink of a plate made of metal is oxidized to form an electrical insulation layer on at least on an upper surface of the metal plate; a power circuit chip and a control chip are attached to a first surface of the lead frame; the lead frame is attached to the metal oxide substrate so that the insulation layer is affixed at least on a region of a second surface of the lead frame that corresponds to a region on the first surface where the power circuit element is attached; a wire bonding operation is performed to connect one or more power circuit chips and a control circuit chip; and encapsulating using an EMC to encapsulate the power circuit element(s), the control circuit element, the lead frame, and the metal/metal oxide substrate and expose the external connection terminal leads.
- According to another aspect of the present invention, there is provided a method for manufacturing a power module package, in which: a metal/metal oxide substrate including a heat sink of a plate made of metal and an insulation layer formed at least on an upper surface of the metal plate heat sink and made of an oxide of the metal are prepared for attachment to the lead frame; an upper wiring layer having a wiring pattern is attached to an upper surface of the insulation layer; inner ends of external connection terminal leads are attached to an edge of the wiring pattern of the upper wiring layer; one or more power circuit chip(s) and a control circuit chip are attached to a surface of the upper wiring layer adjacent the inner ends of the external connection terminal leads; wire bonding is performed to connect the power circuit chip(s) and the control circuit chip; encapsulating using an EMC to enclose the power circuit element(s), the control circuit element, the upper wiring layer, the metal oxide substrate, and one end of the external connection terminals and expose the other end of the external connection terminals.
- The above and other features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings in which:
-
FIG. 1 is a schematic, cross-sectional view of one example of a power module package according to a related art; -
FIG. 2 is a schematic, cross-sectional view of another example of a power module package according to a related art; -
FIG. 3 is a schematic, cross-sectional view of still another example of a power module package according to a related art; -
FIG. 4 is a schematic, cross-sectional view of a power module package according to a first embodiment of the present invention; -
FIG. 5 is a schematic, cross-sectional view of a power module package according to a second embodiment of the present invention; -
FIG. 6 is a schematic, cross-sectional view of a power module package according to a third embodiment of the present invention; -
FIG. 7 is a schematic, cross-sectional view of a modification of a power module package according to a third embodiment of the present invention; -
FIG. 8 is a schematic, cross-sectional view of a power module package according to a fifth embodiment of the present invention; -
FIG. 9 is a schematic, cross-sectional view of one example of a semiconductor package according to the present invention; -
FIGS. 10A through 10D are cross-sectional views explaining a method for manufacturing a power module package according to an embodiment of the present invention; and -
FIG. 11 is a flowchart explaining a method for manufacturing a power module package according to another embodiment of the present invention. - The present invention will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. Those of ordinary skill in the art will understand that other arrangements of power circuit elements and control circuit elements described in the specification are possible and the structures of a lead frame and a heat sink herein are exemplarily and not limited to the specific arrangements or shapes as illustrated in the drawings.
-
FIG. 4 is a schematic, cross-sectional view of a power module package according to a first embodiment of the present invention. - Referring to
FIG. 4 , apower module package 300 includes: alead frame 310; apower circuit element 320; acontrol circuit element 330; a metal/metal oxide substrate EMC 370. - The
power circuit element 320 includes one or more power circuit chips 321 withaluminum wire 322 to connect thechips 321 to the leads of the lead frame. Thealuminum wire 322 has a diameter of about 250-500 μm to endure a high rated current. Thecontrol circuit element 330 includes acontrol circuit chip 331 and agold wire 332. Thealuminum wires 322 and thegold wires 332 properly connect the power circuit chip(s) 321 and thecontrol circuit chip 331, respectively to the leads of thelead frame 310 that extend from inside thepackage 300 to the outside. - The
lead frame 310 has a thickness of about 0.5-1 mm and has afirst surface 311 on which the circuit elements are attached and asecond surface 312 which is opposite to the first surface. External connection terminal leads are formed at an edge of thelead frame 310. - The external connection terminal leads have inner ends adjacent to the circuit elements and outer ends that protrude through the
EMC 370. A down-set die pad 340 is formed at a central portion. Thecircuit elements die pad 340. The down-set die pad 340 may be positioned on a symmetric central point or may be formed at an eccentric position. - The
power circuit element 320 and thecontrol circuit element 330 are attached to thefirst surface 311 of the lead frame. Particularly, thepower circuit element 320 which generates most of the heat is attached to thefirst surface 311 of the down-set die pad 340 of thelead frame 310. - The
metal oxide substrate second surface 312 of thelead frame 310 at a location that corresponds to the region on the first surface where thepower circuit element 320 is attached. As illustrated inFIG. 4 , themetal oxide substrate second surface 312 of the down-set die pad 340 of thelead frame 310. - The adhesive 360 is an epoxy adhesive or silicone elastomer. A filler having excellent thermal conductivity and substantial electric insulation may be dispersed in the adhesive 360. For the filler, aluminum nitride (AlN), aluminum oxide (Al2O3), beryllium oxide (BeO), silicon oxide (SiO2), or combination thereof may be used. For the adhesive 360, a high temperature tape or solder for a high temperature may be used, such as Pb/Sn, Sn/Ag, Pb/Sn/Ag. The adhesive 360 may be formed thin within a thickness of about 10-20μm so that thermal conductive efficiency will not deteriorate but the thickness of the adhesive 360 is not limited to that thickness.
- The metal/
metal oxide substrate heat sink 350 and aninsulation layer 355 made of an oxide of the metal of theheat sink 350. Theheat sink 350 effectively conducts heat generated from thepower circuit element 320 to the outside of thepackage 300. For theheat sink 350, material having an excellent conductivity is used and aluminum having a thermal conductivity of about 100-130 W/m·K is preferred. There is no limitation in thickness of theheat sink 350 and the thickness can be modified in various ways depending on a purpose of thepower module package 300. Of course, other metal and metal oxide combinations are possible, e.g. Si and SiO2 - The
electrical insulation layer 355 should not only electrically insulate thelead frame 310 from the heat sink but also guarantee rapid heat transmission to theheat sink 350. Therefore, thelayer 355 may be made of material having an excellent thermal conductivity and showing a sufficient electrical insulating ability that it can be made as thin as possible. For that purpose, theinsulation layer 355 is made of an oxide of metal of theheat sink 350 such as an aluminum oxide. The aluminumoxide insulation layer 355 has a thermal conductivity of about 20 W/m·K, which is greater than the thermal conductivity the lower EMC 2 (inFIG. 1 ) or the adhesive 360. Further, the aluminumoxide insulation layer 355 has an excellent electric insulation property as does ceramic material. Therefore, the insulation layer, particularly, aninsulation layer 355 a interposed between thelead frame 310 and theheat sink 350 can display a full electrical insulating effect even with a thickness of only about 30-50 μm. The thickness of theinsulation layer 355 a, however, may change depending on electric properties of the application apparatus for which thepower module package 300 is used. - The
electrical insulation layer 355 is formed at least on an upper surface of theheat sink 350. For example, theinsulation layer 355 may be formed on only an upper surface of the heat sink 350 (refer to thereference numeral 355 a), or may be formed on only an upper and a lower surfaces of the heat sink 350 (refer to thereference numerals reference numerals metal oxide substrate 355 may be formed by anodizingmetal 350 that would be used as theheat sink 350. When theelectrical insulation layer 355 on a partial surface of theheat sink 350, an oxidation operation is performed with the rest surface of theheat sink 350 masked. When theinsulation layer 355 is formed over the entire surface of theheat sink 350, the manufacturing operation becomes simple and the hardness of themetal oxide substrate power module package 300 is improved. When forming theinsulation layer 355 a on only the upper surface or forming the insulation layers 355 a and 355 b on only the upper surface and the side of theheat sink 350, a heat transmission property of thepower module package 300 is also improved. - The
EMC 370 is intended to maintain an electrical insulation state between theelements power circuit element 320 and thecontrol circuit element 330 from each other and by isolating both of them from the outside. TheEMC 370 may be formed using an epoxy molding compound having an excellent insulating property. In that case, theEMC 370 encloses thepower circuit element 320, thecontrol circuit element 330, thelead frame 310, andmetal oxide substrate lead frame 310. To improve a heat transmission, theEMC 370 may expose one side of the metal/metal oxide substrate 355 to the outside. - According to the above-described
power module package 300 has an aluminum heat sink which has an excellent heat conductivity and the aluminum oxide which has relatively good thermal conductivity and electrically insulates thealuminum 350 from thelead frame 310. -
FIGS. 10A through 10D are cross-sectional views explaining an example of a method for manufacturing apower module package 300 according to a first embodiment of the present invention. - First, referring to
FIG. 10A , alead frame 310 having a thickness of about 0.5-1.0 mm is prepared. Power circuit chip(s) 321 and acontrol circuit chip 331 are attached to a surface of thelead frame 310 through a die attach operation. The power circuit chip(s) 321 are attached to a down-setdie pad portion 340 of thelead frame 310. The die attach operation can be performed using solder or using silver epoxy. When solder is used for an adhesive (not shown), the die attach operation is performed within a temperature range of about 350-380° C., a pressure range of about 3-5 kg/cm , and in a hydrogen atmosphere. When silver epoxy is used for an adhesive, the die attach operation is performed at room temperature and at a pressure range of 1-2 kg/cm2. - Next, referring to
FIG. 10B , oxidizing one or more surfaces of analuminum plate 350 to provide aluminum oxide layers 355 a, 355 b, 355 c. An adhesive 360 such as an epoxy or a silicone elastomer, including a filler is attached to an upper surface of theinsulation layer 355 a. - Next, referring to
FIG. 10C , the aluminum/aluminum oxide substrate 355 is attached to the lower surface oflead frame 310, at a position below the location where power circuit chip(s) 321 are attached to the upper surface, using the epoxy 360 including the filler for an adhesive. The above attach operation may be performed under a temperature range of about 150-180° C. and a pressure range of 0.5-1.0 kg/cm2 for about 3-5 minutes but is not limited to those specific ranges. - Referring to
FIG. 10D , an aluminum (Al) wire bonding operation and a gold (Au) wire bonding operation are performed so that thepower circuit chip 321 is electrically connected with thelead frame 310 and the power circuit chips 321 are electrically connected each other, and thecontrol circuit chip 330 is electrically connected with thelead frame 310. - Generally, a gold wire is used as a wire for the
control circuit chip 330 and an aluminum wire is used as a wire for thepower circuit chip 321. The aluminum wire bonding operation is performed using a wedge bonding method and the gold wire bonding operation is performed using a ball bonding method. For a swift wire bonding operation, thealuminum wire 332 is bonded first and subsequently thegold wire 332 is bonded. - Subsequently, referring to
FIG. 4 , an encapsulation operation such as a transfer molding method is performed to enclose thecircuit elements aluminum oxide substrate 355 and the outer ends of the leads may be exposed. After that, general subsequent operations such as a trimming and a forming are performed. -
FIG. 5 is a cross-sectional view of a power module package according to a second embodiment of the present invention. Thepower module package 400 of the present embodiment is different from thepower module package 200 of the prior art in that it uses the metal/metal oxide substrate 455 having anupper wiring layer 452 on its upper part, not the DBC substrate (refer to areference numeral 250 inFIG. 3 ) including ceramic. A difference between thepower module package 300 of the above-described first embodiment and that of the related art will be described in more detail. - Referring to
FIG. 5 , thepower module package 400 according to the first embodiment includes: alead frame 410; one or morepower circuit elements 420; a control circuit element 430; anupper wiring layer 452; an aluminum/aluminum oxide substrate 455; and anEMC 470. The power circuit element(s) 420 include power circuit chips 421 and aluminum/gold wire 422. The control circuit element 430 includes acontrol circuit chip 431 and aluminum/gold wire 432. The aluminum/aluminum oxide substrate heat sink 450 and aninsulation layer 455 a formed at least on an upper surface of theheat sink 450. As illustrated inFIG. 5 , theinsulation layer 455 a may be formed over an entire surface of theheat sink 450. Seelayer 455 b (lower) and 455 c (sidewalls). - The
upper wiring layer 452 has a wiring pattern for leads (not shown) and regions between leads are filled with insulating material. The insulating material may be part of theEMC 470. Thepower circuit chip 421 and thecontrol circuit chip 431 are attached to a surface of theupper wiring layer 452 and the aluminum/gold wire 422 and the aluminum/gold wire 432 are connected to the leads of the wiring pattern of theupper wiring layer 452. Theupper wiring layer 452 is directly attached to a surface of the upper insulatinglayer 455 a of thealuminum oxide layer 455. The wiring pattern of theupper wiring layer 452 connects thepower circuit elements 420, connects thelead frame 410 with thepower circuit element 420, and electrically connects the power circuit element with the control circuit element 430. - In the
power module package 400 having the above-described structure, theheat sink 450 has excellent thermal conductivity and acts as a heat sink and thealuminum oxide upper wiring layer 452 is directly attached to a surface of theupper insulation layer 455 a of the metal/metal oxide substrate 455 to that heat transmission is increased even more. -
FIG. 11 is a flowchart explaining an example of a method for manufacturing a power module package according to a second embodiment of the present invention. - First, aluminum/
aluminum oxide substrate 455 is prepared (S21). The aluminum/aluminum oxide substrate 455 includes theheat sink 450 and at least oneinsulation layer 455 a made of the aluminum oxide and formed at least on an upper surface of theheat sink 450. Theinsulation layer 455 a may be formed over an entire surface of theheat sink 450. The aluminum/aluminum oxide substrate 455 may be manufactured by performing a general aluminum oxidation operation known or anodizing. Such anodizing processes are well known. - The
upper wiring layer 452 is directly formed on theinsulation layer 455 a (S22). Theupper wiring layer 452 may be formed on thealuminum oxide layer 455 by a lamination method using Cu, Cu/Ni, Cu/Au, or Cu/Ni/Au, or a sputtering method using the above metal. Theupper wiring layer 452 has a properly-shaped wiring pattern for electric connection. - Subsequently, the external connection terminal lead has its inner ends attached to an edge of the upper wiring layer 452 (S23). This attach operation may be performed using an adhesive such as solder or a thermal tape, laser or spot welding, or using a thermal fusion method using silver (Ag) or silver (Ag)/stannurn (Sn) plating. Next, the
power circuit chip 421 and thecontrol circuit chip 431 are attached to a surface of theupper wiring layer 452. The operation for attaching thosechips power circuit chip 421, solder is used. In that case, the attach operation is performed within a temperature range of about 330-360° C. For attaching thecontrol circuit chip 431, silver epoxy is used. In that case, the attach operation is performed under a room temperature. - Next, the wire bonding operation is performed (S24). For the
power circuit chip 421, an aluminum wire is used, and for thecontrol circuit chip 431, a gold wire is used. The wire bonding operation may be performed in the same way as the wire bonding operation of the above-described manufacturing operation. As a result, thechips upper wiring layer 452. - After that, an encapsulation operation such as a molding operation is performed using the EMC 470 (S25). In the encapsulation operation, a transfer molding method may be used. After general trimming and forming operations are performed (S26), the
power module package 400 as illustrated inFIG. 5 is completed. -
FIG. 6 is a cross-sectional view of a power module package according to athird embodiment 500 of the present invention. In the third embodiment, only differences betweenpackage 500 and the first and the second embodiments will be described in detail. Referring toFIG. 6 , apower module package 500 includes metal/metal oxide substrate first wiring layer 552 a, asecond wiring layer 552 b,external connection terminals 510, apower circuit element 520, acontrol circuit element 530; and anEMC 570. Thepower module package 500 according to the third embodiment is characterized by having ametal oxide substrate 550 withvias 558 where thevias 558 pass through aninsulation layer 550 to electrically connect thefirst wiring layer 552 a with thesecond wiring layer 552 b. - The metal/
metal oxide substrate aluminum oxide substrate 550 that has a planar configuration with a plurality ofconductive vias 558 in thesubstrate 550. Thevias 558 pass through theinsulation layer 550. Theconductive vias 558 may be formed using metal, e.g., aluminum. The aluminum/aluminum oxide substrate - The
first wiring layer 552 a includes a first wiring pattern (not shown) and the first wiring pattern is connected to one of the ends ofvias 558. As an alternative, the first wiring pattern could be electrically connected with acontrol circuit chip 531 through external connection terminals of thecontrol circuit chip 531, such as abump 532. Thecontrol circuit element 530 including thecontrol circuit chip 531 and theexternal connection terminals 532 are attached to a surface of thefirst wiring layer 552 a. - The
second wiring layer 552 b includes a second wiring pattern (not shown) and the second wiring pattern is connected with the other ends of thevias 558. As an alternative, the second wiring pattern could be electrically connected with thepower circuit chip 521 through an external connection terminal of thepower circuit chip 521, such as analuminum wire 522. Thepower circuit element 520 including thepower circuit chip 521 and theexternal connection terminal 522 is attached to a surface of thesecond wiring layer 552 b. - The
external connection terminal 510 of thepower module package 500, such as an external lead, is attached to an edge of thefirst wiring layer 552 a that is electrically connected with the first wiring pattern. Alternatively, theexternal connection terminal 510 may be attached to an edge of thesecond wiring layer 552 b to be electrically connected with the second wiring pattern. - The
power module package 500 dissipates less heat than the power module packages 300 and 400 according to the above-described first and second embodiments. However, since thechips aluminum oxide substrate module 500 has a smaller size thanmodules aluminum insulation layer 550 has better heat conductivity than the printed circuit boards (PCB) that are often used in a power module semiconductor package, it can be appropriately used as a power module for an application apparatus of relatively low power. -
FIG. 7 is a cross-sectional view of apower module package 600 according to a fourth embodiment of the present invention. Thepackage 600 is a modification of the third embodiment,package 500. Referring toFIG. 7 , apower module package 600 includes metal/metal oxide substrate first wiring layer 652 a, asecond wiring layer 652 b,external connection terminals 610, apower circuit element 620, acontrol circuit element 630, and anEMC 670. - The
power module package 600 according to the fourth embodiment is different from thepower module package 500 of the third embodiment in that part ofsurface 650 a of themetal oxide substrate 650 is exposed outside of theEMC 670. Although thepower module package 500 according to the third embodiment with theinsulation layer 550 has excellent thermal conductivity, the entire surface of theinsulation layer 550 is enclosed by theEMC 570. Accordingly, when thepower module package 500 according to the third embodiment is used for a long time, its heat dissipation deteriorates. On the contrary, because thepower module package 600 of the fourth embodiment exposespart 650 a of the surface of theinsulation layer 650, its heat dissipation efficiency is better than thepower module package 500 of the third embodiment. - Referring to
FIG. 7 , opposite ends of theinsulation layer 650 are bent vertically downward so that the left andright parts 650 a of the surface of theelectrical insulation layer 650 may be exposed to the outside. However, the illustrated shape of theelectrical insulation layer 650 is a mere example. For example, theelectrical insulation layer 650 may have a bent portion forming an angle greater or smaller than 90° or may have a straight portion with no bent portion. -
FIG. 8 is a cross-sectional view of apower module package 700 according to a fifth embodiment of the present invention. Referring toFIG. 8 , thepower module package 700 includes metal/metal oxide substrates case 780, anupper wiring layer 752,external connection terminals 710, apower circuit element 720, acontrol circuit element 730, and asilicone resin 770. Thepower module package 700 according to the fifth embodiment is similar in its structure to thepower module package 400 of the second embodiment except for the following differences. - Package 700 uses a silicone resin instead of an epoxy resin as an encapsulating
resin 770 because thepower module package 700 of the present embodiment is so large in its package area that the molding operation cannot be performed using the epoxy resin. In addition, due to the fluent property ofsilicone resin 770,case 780 is provided so that a frame of the silicone resin may be maintained. Thecase 780 can be manufactured using plastics. - The
case 780 includes sidewalls 721-724 and acap 720 and the sidewalls are attached at their bottom ends to an edge of themetal oxide substrates cap 720 is connected between the sidewalls 721-724 to define a predetermined space between the sidewalls and the predetermined space is filled with thesilicone resin 770. Thecase 780 may be attached to a surface of themetal oxide substrates metal oxide substrates holes 782 formed on themetal oxide substrates case 780, respectively. A plurality ofexternal connection terminals 710 pass through thecase 780 and are electrically connected to theupper wiring layer 752. - The
power module package 700 may house a high power device, such as an insulated gate bipolar transistor (IGBT). Thepower module package 700 is useful where the power device generates high heat. Further, in thepower module package 700 of the present embodiment having the aluminum/aluminum oxide substrates -
FIG. 9 is a cross-sectional view of one example of asemiconductor package 800 according to a sixth embodiment of the present invention. Referring toFIG. 9 , asemiconductor package 800 includes aluminum/aluminum oxide substrate wiring pattern 852 a,external connection pads 852 b, asemiconductor element 830, and a sealingresin 870. - The
semiconductor package 800 according to the sixth embodiment is similar in its structure to a flip chip semiconductor package. One difference is that aluminum/aluminum oxide substrate electrical insulation layer 855 made of a plate of aluminum oxide and a plurality ofvias 858 made of non-oxidized aluminum that pass through theinsulation layer 855. The aluminum/aluminum oxide substrate vias 858. - The
wiring pattern 852 a connected with one end of thevias 858 is formed on a first surface of the aluminum/aluminum oxide substrate semiconductor chip 831 is mounted on the first surface and electrically connected with thewiring pattern 852 a through thebump 832. A solder resist 854 may be spread between thewiring patterns 852 a. Theexternal connection pads 852 b connected with the other end of thevia 858 is formed on a second surface of the aluminum/aluminum oxide substrate external connection pads 852 b. Theexternal connection pads 852 b are attached to a mother substrate (not shown) using solder. - As described above, the semiconductor package having the aluminum/aluminum oxide substrate has a better heat transmission compared with the semiconductor package that uses a general PCB.
- The power module package having the metal oxide substrate according to the present invention uses metal having an excellent thermal conductivity as a heat sink and uses an oxide of the metal as an electrical insulation layer so that the heat sink may be electrically insulated. The electrical insulation layer made of the oxide of such metal not only has a better thermal conductivity than the EMC resin but also shows a sufficient insulation effect in case of forming a thickness of the insulation layer thin. Therefore, according to the present invention, it is possible to manufacture the power module package having an excellent heat emission property.
- In addition, since the metal/metal oxide substrate provided to the power module package of the present invention can be manufactured by oxidizing a metal, the package can be easily realized and manufacturing cost is reduced. It is not necessary to perform the two-stage molding operation using two sealing resins having different properties as was done in the prior art. Instead, the molding operation is performed using one sealing resin, so that the manufacturing process is less complex and may be automated.
- According to the present invention, it is possible to use the aluminum/aluminum oxide substrate having various thickness depending on power capacity applied to the power module package and to modify its structure in various ways. Therefore, the power module package of the present invention can be applied to a package module having various power capacities.
- Metal substrates with hard oxide metal coatings may be made by one or more processes. Aluminum is typically anodized to provide a hard, almost crystalline structure of aluminum oxide on the surface of the aluminum. The oxide is tightly formed and becomes, in effect, a barrier to entry of other materials. Anodizing involves the immersion of the part in an electrolyte solution while a current is passed through the solution and the part. As oxygen is formed on the anode (the positive terminal which is the part) it reacts with the part to form a thin layer of aluminum oxide on the surface. After anodizing the part can be soaked in dye which penetrates the still porous (relatively) layer of aluminum oxide. The final step is sealing the oxide layer by immersion in boiling water. Further details are found in Electrochemistry Encyclopedia, http:electrochem.cwru.edu/ed/encycl/art-a02-anodizing.htm. Its entire disclosure is hereby incorporated by reference.
- Anodizing aluminum or other metals provides a hard, thin barrier oxide layer that has many advantages. The barrier oxide layer is usually electrically insulating and has a relatively high dielectric constant compared to the metal from which it is formed. Aluminum oxide does not have the high thermal conductivity of aluminum. However, the rate of heat dissipation depends not only on the inherent conductivity of a material, but also its thickness. Since the layer of aluminum oxide needed for electrical insulation is relatively thin when compared to the aluminum heat sink, the thin aluminum oxide layer does not materially impair the overall thermal conductivity of the aluminum/aluminum oxide substrate. In a typical embodiment of the invention, the ratio of aluminum to aluminum oxide is about 10 to 1.
- Hard, barrier oxide may also be created with silicon. It is also well known that silicon will oxidize to provide an oxide layer on the surface of silicon. This native oxide of silicon is one of its many advantages in forming integrated circuits. The silicon oxidation process proceeds in a diffusion-like matter so that oxygen atoms attach to silicon atoms and thus will take on the corresponding structure of the silicon substrate. If the substrate is crystalline or polycrystalline, the silicon dioxide layer will have a similar surface. Silicon dioxide is a common dielectric in semiconductor applications.
- While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims.
Claims (10)
1. A power module package comprising:
a power circuit element having one or more power semiconductor devices;
a control circuit element electrically connected with the power circuit element, for controlling the power semiconductor devices within the power circuit element;
a lead frame having external connection terminal leads with inner ends and outer ends and having a first surface to which the power circuit element and the control circuit element are attached and having a second surface opposite the first surface;
a metal/metal oxide substrate having a heat sink of a plate of metal and an electrical insulation layer formed at least on an upper surface of the metal plate and comprising an oxide of the metal, the electrical insulation layer being attached to part or all of a region of the second surface that corresponds to a region on the first surface where the power circuit element is attached; and
an encapsulating resin for enclosing the power circuit element, the control circuit element, the lead frame, and the metal oxide substrate, and outer end of external connection terminal leads of the lead frame.
2. The power module package of claim 1 , wherein the metal is aluminum or aluminum alloy.
3. The power module package of claim 1 , wherein further comprising an adhesive for attaching the insulation layer to the lead frame wherein said adhesive is an epoxy adhesive or a silicone elastomer adhesive.
4. The power module package of claim 3 , wherein the adhesive comprises a filler having a relatively high thermal conductivity and an electric insulation property.
5. The power module package of claim 4 , wherein the filler is a nitride, an aluminum oxide, a beryllium oxide, a silicon oxide or a compound of these oxides.
6. The power module package of claim 1 , wherein the lead frame further comprises a down-set die pad and the power circuit element and the insulation layer are attached to the down-set die pad.
7. The power module package of claim 1 , wherein the insulation layer is formed on a front side of the heat sink.
8. The power module package of claim 1 , wherein the encapsulating resin exposes a rear surface of the metal/metal oxide substrate.
9-26. (canceled)
27. The power module package of claim 1 , wherein the metal plate has a second oxide layer formed on its other surface.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/565,274 US20100013070A1 (en) | 2001-06-11 | 2009-09-23 | Power module package having excellent heat sink emission capability and method for manufacturing the same |
US12/730,294 US8890310B2 (en) | 2001-06-11 | 2010-03-24 | Power module package having excellent heat sink emission capability and method for manufacturing the same |
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20010032489 | 2001-06-11 | ||
KR2001-32489 | 2001-06-11 | ||
KR2002-20779 | 2002-04-17 | ||
KR1020020020779A KR100867573B1 (en) | 2001-06-11 | 2002-04-17 | Power module package improved heat radiating capability and method for manufacturing the same |
US10/167,067 US7061080B2 (en) | 2001-06-11 | 2002-06-10 | Power module package having improved heat dissipating capability |
KR2004-66176 | 2004-08-21 | ||
KR20040066176A KR100723454B1 (en) | 2004-08-21 | 2004-08-21 | Power module package with high thermal dissipation capability and method for manufacturing the same |
US11/208,385 US20060056213A1 (en) | 2004-08-21 | 2005-08-19 | Power module package having excellent heat sink emission capability and method for manufacturing the same |
US12/565,274 US20100013070A1 (en) | 2001-06-11 | 2009-09-23 | Power module package having excellent heat sink emission capability and method for manufacturing the same |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/208,385 Continuation US20060056213A1 (en) | 2001-06-11 | 2005-08-19 | Power module package having excellent heat sink emission capability and method for manufacturing the same |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/730,294 Continuation US8890310B2 (en) | 2001-06-11 | 2010-03-24 | Power module package having excellent heat sink emission capability and method for manufacturing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
US20100013070A1 true US20100013070A1 (en) | 2010-01-21 |
Family
ID=36033722
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/208,385 Abandoned US20060056213A1 (en) | 2001-06-11 | 2005-08-19 | Power module package having excellent heat sink emission capability and method for manufacturing the same |
US12/565,274 Abandoned US20100013070A1 (en) | 2001-06-11 | 2009-09-23 | Power module package having excellent heat sink emission capability and method for manufacturing the same |
US12/730,294 Expired - Lifetime US8890310B2 (en) | 2001-06-11 | 2010-03-24 | Power module package having excellent heat sink emission capability and method for manufacturing the same |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/208,385 Abandoned US20060056213A1 (en) | 2001-06-11 | 2005-08-19 | Power module package having excellent heat sink emission capability and method for manufacturing the same |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/730,294 Expired - Lifetime US8890310B2 (en) | 2001-06-11 | 2010-03-24 | Power module package having excellent heat sink emission capability and method for manufacturing the same |
Country Status (2)
Country | Link |
---|---|
US (3) | US20060056213A1 (en) |
KR (1) | KR100723454B1 (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100123229A1 (en) * | 2008-11-17 | 2010-05-20 | Henry Descalzo Bathan | Integrated circuit packaging system with plated pad and method of manufacture thereof |
US20120061815A1 (en) * | 2010-09-08 | 2012-03-15 | Vincotech Holdings S.A.R.L. | Power semiconductor module having sintered metal connections, preferably sintered silver connections, and production method |
US20130083492A1 (en) * | 2011-09-30 | 2013-04-04 | Samsung Electro-Mechanics Co., Ltd | Power module package and method of manufacturing the same |
US20140110833A1 (en) * | 2012-10-24 | 2014-04-24 | Samsung Electro-Mechanics Co., Ltd. | Power module package |
CN103917040A (en) * | 2013-01-09 | 2014-07-09 | 索尼公司 | Circuit substrate, method of manufacturing circuit substrate, and electronic component |
US20160336252A1 (en) * | 2014-01-27 | 2016-11-17 | Hitachi, Ltd. | Semiconductor Module |
US9627302B2 (en) * | 2014-01-10 | 2017-04-18 | Mitsubishi Electric Corporation | Power semiconductor device |
CN107871716A (en) * | 2016-09-26 | 2018-04-03 | 株式会社日立功率半导体 | Semiconductor device |
US11189542B2 (en) * | 2019-02-18 | 2021-11-30 | Infineon Technologies Austria Ag | Method for fabricating an electronic module via compression molding |
Families Citing this family (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200642550A (en) * | 2005-05-25 | 2006-12-01 | Cyntec Co Ltd | Power module package structure |
WO2007026944A1 (en) * | 2005-08-31 | 2007-03-08 | Sanyo Electric Co., Ltd. | Circuit device and method for manufacturing same |
US8093713B2 (en) * | 2007-02-09 | 2012-01-10 | Infineon Technologies Ag | Module with silicon-based layer |
US8188596B2 (en) * | 2007-02-09 | 2012-05-29 | Infineon Technologies Ag | Multi-chip module |
US7868465B2 (en) * | 2007-06-04 | 2011-01-11 | Infineon Technologies Ag | Semiconductor device with a metallic carrier and two semiconductor chips applied to the carrier |
TW200919685A (en) * | 2007-10-17 | 2009-05-01 | Phoenix Prec Technology Corp | Package on package(pop) structure |
US20090115045A1 (en) * | 2007-11-02 | 2009-05-07 | Phoenix Precision Technology Corporation | Stacked package module and method for fabricating the same |
US8207607B2 (en) * | 2007-12-14 | 2012-06-26 | Denso Corporation | Semiconductor device with resin mold |
KR101454321B1 (en) | 2008-01-22 | 2014-10-23 | 페어차일드코리아반도체 주식회사 | Semiconductor package with insulated metal substrate and method of fabricating the same |
KR101524544B1 (en) * | 2008-03-28 | 2015-06-02 | 페어차일드코리아반도체 주식회사 | Power device package having thermal electric module using Peltier effect and the method of fabricating the same |
TW200949961A (en) * | 2008-05-30 | 2009-12-01 | Powertech Technology Inc | Manufacturing method of semiconductor element |
KR101022113B1 (en) * | 2008-12-19 | 2011-03-17 | 전남대학교산학협력단 | High efficiency power led module and its manufacture method |
KR20100126909A (en) * | 2009-05-25 | 2010-12-03 | 삼성전기주식회사 | Power semiconductor module |
KR101037470B1 (en) * | 2009-09-15 | 2011-05-26 | 삼성전기주식회사 | Heat-dissipating substrate and fabricating method of the same |
KR101075774B1 (en) * | 2009-10-29 | 2011-10-26 | 삼성전기주식회사 | Luminous element package and method for manufacturing the same |
US9024350B2 (en) * | 2010-02-08 | 2015-05-05 | Ban P Loh | LED light module |
KR101698431B1 (en) * | 2010-02-10 | 2017-02-02 | 페어차일드코리아반도체 주식회사 | Semiconductor power module pakage and methods of fabricating the same |
US8278756B2 (en) * | 2010-02-24 | 2012-10-02 | Inpaq Technology Co., Ltd. | Single chip semiconductor coating structure and manufacturing method thereof |
US8461669B2 (en) | 2010-09-20 | 2013-06-11 | Monolithic Power Systems, Inc. | Integrated power converter package with die stacking |
CN102054826B (en) * | 2010-11-04 | 2013-01-09 | 嘉兴斯达微电子有限公司 | Novel baseplate-free power module |
KR101739742B1 (en) * | 2010-11-11 | 2017-05-25 | 삼성전자 주식회사 | Semiconductor package and semiconductor system comprising the same |
JP5523299B2 (en) * | 2010-12-20 | 2014-06-18 | 株式会社日立製作所 | Power module |
KR101321282B1 (en) * | 2011-06-17 | 2013-10-28 | 삼성전기주식회사 | Power module package and system module having the same |
KR101237566B1 (en) | 2011-07-20 | 2013-02-26 | 삼성전기주식회사 | Power Module Package and Method for Manufacturing the same |
JP5787784B2 (en) * | 2012-02-15 | 2015-09-30 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
DE102012205590B4 (en) * | 2012-04-04 | 2023-11-02 | Robert Bosch Gmbh | Arrangement with a power semiconductor, a circuit carrier, a capillary and/or porous body and a heat sink, method for producing an arrangement and method for operating cooling of a power semiconductor by means of a heat transport medium |
CN102637613B (en) * | 2012-05-09 | 2015-07-01 | 四川立泰电子有限公司 | Realization method for lead bonding thick aluminum wire |
EP2680305A3 (en) * | 2012-06-29 | 2014-02-26 | Samsung Electro-Mechanics Co., Ltd | Semiconductor package |
CN104603933B (en) * | 2012-08-31 | 2018-09-18 | 三菱综合材料株式会社 | Power module substrate and power module |
US8847384B2 (en) * | 2012-10-15 | 2014-09-30 | Toyota Motor Engineering & Manufacturing North America, Inc. | Power modules and power module arrays having a modular design |
KR101366889B1 (en) * | 2012-10-18 | 2014-02-24 | 삼성전기주식회사 | Semiconductor package |
KR101443972B1 (en) * | 2012-10-31 | 2014-09-23 | 삼성전기주식회사 | All-in-one power semiconductor module |
JP2014099547A (en) | 2012-11-15 | 2014-05-29 | Mitsubishi Electric Corp | Power semiconductor module and method of manufacturing the same |
KR101454078B1 (en) * | 2012-11-16 | 2014-10-27 | 삼성전기주식회사 | Power semiconductor device and method of manufacturing the same |
KR101420536B1 (en) * | 2012-12-14 | 2014-07-17 | 삼성전기주식회사 | Power module package |
JP2014207430A (en) * | 2013-03-21 | 2014-10-30 | ローム株式会社 | Semiconductor device |
CN104303289B (en) * | 2013-05-13 | 2017-10-24 | 新电元工业株式会社 | Electronic module and its manufacture method |
DE102013219992A1 (en) * | 2013-10-02 | 2015-04-02 | Conti Temic Microelectronic Gmbh | Circuit device and method for its production |
KR102041644B1 (en) * | 2014-01-08 | 2019-11-07 | 삼성전기주식회사 | Power module package and method of fabricating the same |
KR101963271B1 (en) | 2014-01-28 | 2019-07-31 | 삼성전기주식회사 | Power module package and the method of manufacturing thereof |
KR20150090616A (en) | 2014-01-29 | 2015-08-06 | 삼성전기주식회사 | Leadless package type power semiconductor module |
GB2525585B (en) * | 2014-03-20 | 2018-10-03 | Micross Components Ltd | Leadless chip carrier |
TW201543720A (en) * | 2014-05-06 | 2015-11-16 | Genesis Photonics Inc | Package structure and manufacturing method thereof |
US9431327B2 (en) * | 2014-05-30 | 2016-08-30 | Delta Electronics, Inc. | Semiconductor device |
KR102285332B1 (en) * | 2014-11-11 | 2021-08-04 | 삼성전자주식회사 | Semiconductor package and semiconductor device comprising the same |
JP6345583B2 (en) * | 2014-12-03 | 2018-06-20 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
KR20160069902A (en) | 2014-12-09 | 2016-06-17 | 주식회사 솔루엠 | Power module package and method for manufacturing thereof |
US20160242321A1 (en) * | 2015-02-13 | 2016-08-18 | Laird Technologies, Inc. | Mid-plates and electromagnetic interference (emi) board level shields with embedded and/or internal heat spreaders |
US11107746B2 (en) * | 2016-02-09 | 2021-08-31 | Mitsubishi Electric Corporation | Power semiconductor apparatus and manufacturing method therefor |
JP6849660B2 (en) * | 2016-04-01 | 2021-03-24 | 三菱電機株式会社 | Semiconductor device |
KR20180046418A (en) * | 2016-10-27 | 2018-05-09 | 엘지디스플레이 주식회사 | Display device and method for manufacturing of the same |
KR20180055635A (en) | 2016-11-14 | 2018-05-25 | 삼성전자주식회사 | Semiconductor module |
CN110959191B (en) * | 2017-08-24 | 2023-10-20 | 新电元工业株式会社 | Semiconductor device with a semiconductor device having a plurality of semiconductor chips |
CN109637983B (en) * | 2017-10-06 | 2021-10-08 | 财团法人工业技术研究院 | Chip package |
CN107993991A (en) * | 2017-12-20 | 2018-05-04 | 合肥矽迈微电子科技有限公司 | A kind of chip-packaging structure and its manufacture method |
CN110601557A (en) * | 2018-06-13 | 2019-12-20 | 重庆美的制冷设备有限公司 | High-integration intelligent power module and electrical equipment |
CN111199888A (en) | 2018-11-20 | 2020-05-26 | 奥特斯奥地利科技与***技术有限公司 | Component carrier comprising a PID and method for manufacturing a component carrier |
JP7134131B2 (en) * | 2019-04-26 | 2022-09-09 | 三菱電機株式会社 | semiconductor equipment |
KR102231769B1 (en) * | 2019-08-20 | 2021-04-01 | 제엠제코(주) | Semiconductor package having exposed heat sink for high thermal conductivity and manufacturing method thereof |
JP7196815B2 (en) * | 2019-10-23 | 2022-12-27 | 三菱電機株式会社 | Semiconductor module and power converter |
KR102481099B1 (en) * | 2020-09-08 | 2022-12-27 | 제엠제코(주) | Method for complex semiconductor package |
US11631626B2 (en) * | 2020-10-05 | 2023-04-18 | Unimicron Technology Corp. | Package structure |
KR102464477B1 (en) * | 2020-12-10 | 2022-11-09 | 현대모비스 주식회사 | Dual side cooling power module and manufacturing method of the same |
US20220238426A1 (en) * | 2021-01-27 | 2022-07-28 | Cree, Inc. | Packaged electronic devices having dielectric substrates with thermally conductive adhesive layers |
Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5315153A (en) * | 1989-09-29 | 1994-05-24 | Toyo Aluminium Kabushiki Kaisha | Packages for semiconductor integrated circuit |
US5519252A (en) * | 1992-07-24 | 1996-05-21 | Fuji Electric Co., Ltd. | Power semiconductor device employing pin block connection arrangement for facilitated and economized manufacture |
US5703399A (en) * | 1995-11-15 | 1997-12-30 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor power module |
US5710695A (en) * | 1995-11-07 | 1998-01-20 | Vlsi Technology, Inc. | Leadframe ball grid array package |
US5753971A (en) * | 1995-06-19 | 1998-05-19 | Siemens Aktiengesellschaft | Power semiconductor module with terminal pins |
US5767573A (en) * | 1995-10-26 | 1998-06-16 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
US5796159A (en) * | 1995-11-30 | 1998-08-18 | Analog Devices, Inc. | Thermally efficient integrated circuit package |
US5814878A (en) * | 1995-11-30 | 1998-09-29 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
US6291265B1 (en) * | 1998-07-28 | 2001-09-18 | Micron Technology, Inc. | Method of manufacturing an interposer |
US6291880B1 (en) * | 1998-02-12 | 2001-09-18 | Hitachi, Ltd. | Semiconductor device including an integrally molded lead frame |
US6313598B1 (en) * | 1998-09-11 | 2001-11-06 | Hitachi, Ltd. | Power semiconductor module and motor drive system |
US6313520B1 (en) * | 2000-03-07 | 2001-11-06 | Mitsubishi Denki Kabushiki Kaisha | Resin-sealed power semiconductor device including substrate with all electronic components for control circuit mounted thereon |
US6424026B1 (en) * | 1999-08-02 | 2002-07-23 | International Rectifier Corporation | Power module with closely spaced printed circuit board and substrate |
US6432750B2 (en) * | 2000-06-13 | 2002-08-13 | Fairchild Korea Semiconductor Ltd. | Power module package having insulator type heat sink attached to rear surface of lead frame and manufacturing method thereof |
US20030011054A1 (en) * | 2001-06-11 | 2003-01-16 | Fairchild Semiconductor Corporation | Power module package having improved heat dissipating capability |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4939316A (en) * | 1988-10-05 | 1990-07-03 | Olin Corporation | Aluminum alloy semiconductor packages |
US5343073A (en) * | 1992-01-17 | 1994-08-30 | Olin Corporation | Lead frames having a chromium and zinc alloy coating |
KR19990075853A (en) * | 1998-03-25 | 1999-10-15 | 이형도 | Power Module Board |
US6852567B1 (en) * | 1999-05-31 | 2005-02-08 | Infineon Technologies A.G. | Method of assembling a semiconductor device package |
KR100342589B1 (en) * | 1999-10-01 | 2002-07-04 | 김덕중 | Semiconductor power modules and methods for manufacturing the same |
JP4286465B2 (en) * | 2001-02-09 | 2009-07-01 | 三菱電機株式会社 | Semiconductor device and manufacturing method thereof |
JP3676268B2 (en) * | 2001-08-01 | 2005-07-27 | 株式会社日立製作所 | Heat transfer structure and semiconductor device |
US6703399B2 (en) * | 2002-05-06 | 2004-03-09 | The Stehlin Foundation For Cancer Research | Halo-alkyl esters of camptothecins and methods of treating cancer using these compounds |
KR20040052574A (en) * | 2004-04-06 | 2004-06-23 | (주)에스피티 | Printed circuit board with heat sink and manufacturing method of the same |
-
2004
- 2004-08-21 KR KR20040066176A patent/KR100723454B1/en active IP Right Grant
-
2005
- 2005-08-19 US US11/208,385 patent/US20060056213A1/en not_active Abandoned
-
2009
- 2009-09-23 US US12/565,274 patent/US20100013070A1/en not_active Abandoned
-
2010
- 2010-03-24 US US12/730,294 patent/US8890310B2/en not_active Expired - Lifetime
Patent Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5315153A (en) * | 1989-09-29 | 1994-05-24 | Toyo Aluminium Kabushiki Kaisha | Packages for semiconductor integrated circuit |
US5519252A (en) * | 1992-07-24 | 1996-05-21 | Fuji Electric Co., Ltd. | Power semiconductor device employing pin block connection arrangement for facilitated and economized manufacture |
US5753971A (en) * | 1995-06-19 | 1998-05-19 | Siemens Aktiengesellschaft | Power semiconductor module with terminal pins |
US5767573A (en) * | 1995-10-26 | 1998-06-16 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
US5710695A (en) * | 1995-11-07 | 1998-01-20 | Vlsi Technology, Inc. | Leadframe ball grid array package |
US5703399A (en) * | 1995-11-15 | 1997-12-30 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor power module |
US5796159A (en) * | 1995-11-30 | 1998-08-18 | Analog Devices, Inc. | Thermally efficient integrated circuit package |
US5814878A (en) * | 1995-11-30 | 1998-09-29 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
US6291880B1 (en) * | 1998-02-12 | 2001-09-18 | Hitachi, Ltd. | Semiconductor device including an integrally molded lead frame |
US6291265B1 (en) * | 1998-07-28 | 2001-09-18 | Micron Technology, Inc. | Method of manufacturing an interposer |
US6313598B1 (en) * | 1998-09-11 | 2001-11-06 | Hitachi, Ltd. | Power semiconductor module and motor drive system |
US6424026B1 (en) * | 1999-08-02 | 2002-07-23 | International Rectifier Corporation | Power module with closely spaced printed circuit board and substrate |
US6313520B1 (en) * | 2000-03-07 | 2001-11-06 | Mitsubishi Denki Kabushiki Kaisha | Resin-sealed power semiconductor device including substrate with all electronic components for control circuit mounted thereon |
US6432750B2 (en) * | 2000-06-13 | 2002-08-13 | Fairchild Korea Semiconductor Ltd. | Power module package having insulator type heat sink attached to rear surface of lead frame and manufacturing method thereof |
US20030011054A1 (en) * | 2001-06-11 | 2003-01-16 | Fairchild Semiconductor Corporation | Power module package having improved heat dissipating capability |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100123229A1 (en) * | 2008-11-17 | 2010-05-20 | Henry Descalzo Bathan | Integrated circuit packaging system with plated pad and method of manufacture thereof |
US8106502B2 (en) * | 2008-11-17 | 2012-01-31 | Stats Chippac Ltd. | Integrated circuit packaging system with plated pad and method of manufacture thereof |
US20120061815A1 (en) * | 2010-09-08 | 2012-03-15 | Vincotech Holdings S.A.R.L. | Power semiconductor module having sintered metal connections, preferably sintered silver connections, and production method |
CN102437140A (en) * | 2010-09-08 | 2012-05-02 | 文科泰克控股公司 | Power semiconductor module having sintered metal connections and production method |
JP2012099794A (en) * | 2010-09-08 | 2012-05-24 | Vincotech Holdings Sarl | Sintered metal joining, power semiconductor module preferably having sintered silver joining, and manufacturing method of the power semiconductor module |
US20130083492A1 (en) * | 2011-09-30 | 2013-04-04 | Samsung Electro-Mechanics Co., Ltd | Power module package and method of manufacturing the same |
US20140110833A1 (en) * | 2012-10-24 | 2014-04-24 | Samsung Electro-Mechanics Co., Ltd. | Power module package |
CN103917040A (en) * | 2013-01-09 | 2014-07-09 | 索尼公司 | Circuit substrate, method of manufacturing circuit substrate, and electronic component |
US20140191382A1 (en) * | 2013-01-09 | 2014-07-10 | Sony Corporation | Circuit substrate, method of manufacturing circuit substrate, and electronic component |
US9918388B2 (en) * | 2013-01-09 | 2018-03-13 | Sony Corporation | Circuit substrate, method of manufacturing circuit substrate, and electronic component |
US9627302B2 (en) * | 2014-01-10 | 2017-04-18 | Mitsubishi Electric Corporation | Power semiconductor device |
US20160336252A1 (en) * | 2014-01-27 | 2016-11-17 | Hitachi, Ltd. | Semiconductor Module |
US9754855B2 (en) * | 2014-01-27 | 2017-09-05 | Hitachi, Ltd. | Semiconductor module having an embedded metal heat dissipation plate |
CN107871716A (en) * | 2016-09-26 | 2018-04-03 | 株式会社日立功率半导体 | Semiconductor device |
US11189542B2 (en) * | 2019-02-18 | 2021-11-30 | Infineon Technologies Austria Ag | Method for fabricating an electronic module via compression molding |
Also Published As
Publication number | Publication date |
---|---|
US20100176498A1 (en) | 2010-07-15 |
KR100723454B1 (en) | 2007-05-30 |
KR20060017711A (en) | 2006-02-27 |
US8890310B2 (en) | 2014-11-18 |
US20060056213A1 (en) | 2006-03-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8890310B2 (en) | Power module package having excellent heat sink emission capability and method for manufacturing the same | |
US7061080B2 (en) | Power module package having improved heat dissipating capability | |
US7846779B2 (en) | Power device package and method of fabricating the same | |
US8309399B2 (en) | Power semiconductor module and method of manufacturing the same | |
US7045884B2 (en) | Semiconductor device package | |
US5767573A (en) | Semiconductor device | |
US8916958B2 (en) | Semiconductor package with multiple chips and substrate in metal cap | |
US8198712B2 (en) | Hermetically sealed semiconductor device module | |
US10950516B2 (en) | Resin encapsulated power semiconductor module with exposed terminal areas | |
US20080164588A1 (en) | High power semiconductor package | |
KR101519062B1 (en) | Semiconductor Device Package | |
KR20100126909A (en) | Power semiconductor module | |
KR20080064771A (en) | Power module package improved heat radiating capability and method for manufacturing the same | |
US20200144140A1 (en) | Power semiconductor module | |
KR102199360B1 (en) | Semiconductor package | |
KR101994727B1 (en) | Power module Package and Manufacturing Method for the same | |
WO2022056679A1 (en) | Power module and manufacturing method therefor, converter, and electronic device | |
JP2004088022A (en) | High power semiconductor device | |
JP4861200B2 (en) | Power module | |
JPS63250164A (en) | High power hybrid integrated circuit substrate and its integrated circuit | |
KR20220033089A (en) | Complex semiconductor package | |
CN117293118A (en) | Power module and manufacturing method thereof | |
KR20000001487A (en) | Ball grid array package having super-heat emission characteristic | |
JP2002134560A (en) | Semiconductor device | |
JP2002076261A (en) | Power semiconductor module |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: EXPRESSLY ABANDONED -- DURING EXAMINATION |