US20080207093A1 - Methods and apparatus for cleaning a substrate edge using chemical and mechanical polishing - Google Patents
Methods and apparatus for cleaning a substrate edge using chemical and mechanical polishing Download PDFInfo
- Publication number
- US20080207093A1 US20080207093A1 US12/039,418 US3941808A US2008207093A1 US 20080207093 A1 US20080207093 A1 US 20080207093A1 US 3941808 A US3941808 A US 3941808A US 2008207093 A1 US2008207093 A1 US 2008207093A1
- Authority
- US
- United States
- Prior art keywords
- substrate
- edge
- fluid
- polishing head
- polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
Definitions
- the present invention relates generally to electronic device processing, and more particularly to methods and apparatus for cleaning an edge of a substrate.
- undesirable materials may build up on the edge of a substrate.
- the materials may include dielectrics, photoresist and metals used in IC manufacture. Therefore, it may be desirable to clean or polish the bevel and edge of the substrate to remove these materials. What is needed are systems, methods and apparatus for cleaning the edge of substrates without damaging the major surfaces of the substrates.
- an apparatus for concurrently chemically and mechanically polishing a substrate edge.
- the apparatus comprises a substrate support adapted to rotate a substrate; a polishing head adapted to contact an edge of the substrate, the polishing head including a first channel adapted to apply a first fluid to the edge of the substrate; a second channel adapted to direct a second fluid onto a major surface of the rotating substrate; and a third channel adapted to direct a third fluid at the major surface of the substrate and to prevent the second fluid from diluting the first fluid.
- a system for concurrently chemically and mechanically polishing a substrate edge.
- the system comprises a substrate support adapted to rotate a substrate; a polishing head, adapted to contact an edge of a substrate, the polishing head including a first channel adapted to apply a first fluid to the edge of the substrate; a second channel adapted to direct a second fluid onto a major surface of the rotating substrate; a third channel adapted to direct a third fluid at the major surface of the substrate and to prevent the second fluid from diluting the first fluid; and a controller adapted to operate the concurrent chemical and mechanical polishing of the edge of the substrate.
- a method for concurrently chemically and mechanically polishing a substrate edge.
- the method includes the steps of (1) rotating a substrate; (2) contacting an edge of the substrate with a polishing head; (3) applying a first fluid to the edge of the substrate via the polishing head; (4) directing a second fluid onto a major surface of the rotating substrate; and (5) directing a third fluid at the major surface of the substrate, wherein the third fluid prevents the second fluid from diluting the first fluid.
- FIG. 1 is a schematic illustration of a cross-section of a portion of a substrate.
- FIG. 2 is a schematic illustration depicting an example embodiment of an edge cleaning system according to the present invention.
- FIG. 3 is a perspective view depicting another example embodiment of an edge cleaning system according to the present invention.
- FIG. 4 is a side view of a polishing unit according to the present invention.
- FIG. 5 is a front view of a polishing unit according to the present invention.
- FIG. 6 is a flow chart depicting an example application method of embodiments of an edge cleaning system according to the present invention.
- the present invention provides improved methods and apparatus for cleaning and/or polishing the edge of a substrate.
- the edge of a substrate may be polished by application of an abrasive polishing pad or film contacting the substrate edge via a polishing head and by application of chemicals onto the substrate edge, as the substrate is rotated or otherwise moved (e.g., oscillated).
- DI water deionized water
- a curtain of fluid and in a preferred embodiment a gas, such as N 2 , is directed at the major surface of the substrate such that the gas prevents the DI water from contacting the polishing head and/or diluting the polishing chemicals.
- the curtain of gas may be curbed to form an arc surrounding the area on the substrate to be polished, such that the interior of the arc faces the polishing head.
- the interior of the arc may face the DI water supply to contain the DI water and push it away from the polishing head.
- a substrate 100 may include two major surfaces 102 , 102 ′, and an edge 104 .
- Each major surface 102 , 102 ′ of the substrate 100 may include a device region 106 , 106 ′, and an exclusion region 108 , 108 ′. (Typically however, only one of the two major surfaces 102 , 102 ′ will include a device region and an exclusion region.)
- the exclusion regions 108 , 108 ′ may serve as buffers between the device regions 106 , 106 ′ and the edge 104 .
- the edge 104 of a substrate 100 may include an outer edge 110 and bevels 112 , 114 .
- the bevels 112 , 114 may be located between the outer edge 110 and the exclusion regions 108 , 108 ′ of the two major surfaces 102 , 102 ′.
- the present invention is adapted to clean and/or polish the outer edge 110 and at least one bevel 112 , 114 of a substrate 100 without affecting the device regions 106 , 106 ′. In some embodiments, all or part of the exclusion regions 108 , 108 ′ may be cleaned or polished as well.
- FIG. 2 a schematic illustration of an example embodiment of a polishing head system 200 , including a polishing head 201 , adapted to polish the edge 104 of a substrate 100 is provided.
- the substrate 100 may be held or supported and rotated by a vacuum chuck 202 , for example.
- Other suitable substrate support and rotation means may be used.
- the substrate 100 may be rotated by driver rollers and guide rollers, etc.
- the polishing head 201 may include a backing pad 204 , a roller, and/or an inflatable pad. In either case, the pad, roller and/or inflatable pad may be soft and/or include or develop contours to conform to the shape of the substrate edge 104 .
- the backing pad 204 may also include abrasive particles and be used to polish the substrate edge 104 . Additionally or alternatively, the backing pad 204 may be pressed against a polishing tape 206 , used to polish the substrate edge 104 .
- the system 200 may further include an actuator 208 (e.g., a pneumatic slide, hydraulic ram, servo motor driven pusher, etc.). As the substrate 100 rotates, the actuator 208 may press the backing pad 204 , and hence the polishing tape 206 , against the substrate edge 104 . Alternatively or additionally, the actuator 208 may be adjustable, and may also be used to push the entire head 201 towards the substrate 100 .
- a biasing device e.g., a spring
- mount the pad 204 to the head 201 to provide flexible/dynamic counter pressure to the pad 204 .
- the substrate 100 may be in contact with the polishing tape 206 for about 15 to 150 seconds depending on the type of tape used, the grit of the tape, the rate of rotation, the amount of polishing required, etc. More or less time may be used.
- a controlled amount of pressure may be applied to polish the substrate edge 104 .
- the system 200 may provide precise control of an edge polish process, which may be used to compensate for different edge geometries and changes in the substrate 100 as material is removed from the substrate edge 104 .
- the pad 204 may be made of material such as, for example, an acetal resin (e.g., Delrin® manufactured by DuPont Corporation), PVDF, polyurethane closed cell foam, silicon rubber, etc. Other suitable materials may be used. Such materials may have resilience or an ability to conform that is a function of the thickness or density of the pad 204 . The material may be selected based upon its resilience. The desired resilience may be selected based upon the type of polishing required.
- an acetal resin e.g., Delrin® manufactured by DuPont Corporation
- PVDF polyurethane closed cell foam
- silicon rubber etc.
- Other suitable materials may be used.
- Such materials may have resilience or an ability to conform that is a function of the thickness or density of the pad 204 .
- the material may be selected based upon its resilience.
- the desired resilience may be selected based upon the type of polishing required.
- the degree to which the pad 204 may conform to the substrate edge 104 may be adjustable.
- the pad 204 may be, or include, an inflatable bladder, as described in Application Ser. No. 60/939,333 (Attorney Docket No. 11567/L), cited above, which may be inflatable by air, liquid or other fluid. The amount of fluid filling the pad 204 may be adjusted, such that the pad 204 may suitably conform to the substrate edge 104 .
- the substrate 100 may be rotated, for example, in a horizontal plane.
- the substrate edge 104 may be aligned with, or normal to, the polishing tape 206 , pad 204 and/or polishing head 201 .
- the substrate 100 may be rotated in a vertical plane, other non-horizontal plane, and/or be moved between different planes of rotation.
- the polishing head 201 may rock around the substrate edge 104 to polish the entire edge 104 .
- the angle of rocking may include, for example, plus or minus 90 degrees. Other rocking angles may be used. In operation, this is achieved by angularly translating the head 201 , and consequently the backing pad 204 and polishing tape 206 in contact with, and contoured to, the substrate edge 104 , around an axis that is tangential to the outer edge 110 of the substrate 100 as it is rotated.
- the head 201 may be adapted to continuously or intermittently oscillate between the various positions.
- the head 201 may be moved by drivers (not shown) under the direction of a programmed or user operated controller 210 (shown in FIG. 3 ). Alternatively, the head 201 may be fixed and/or only adjusted while the substrate 100 is not being rotated. In yet other embodiments, the substrate 100 may be held fixed while the head 201 is oscillated (as described above), as well as rotated circumferentially around the substrate 100 . In some embodiments, the key parameters to control the edge polishing area may be the angle of rocking, the center of rotation for rocking, and the contour of the backing pad.
- fluids or chemicals may be used to aid in the polishing or washing away of accumulated particles, and may be delivered to the substrate edge 104 , as further described below with respect to FIG. 4 .
- the controller 210 may control the driver(s) used to rotate the substrate 100 and the actuator 208 used to push the pad 204 against the substrate edge 104 .
- the controller 210 may be coupled (e.g., electrically, mechanically, pneumatically, hydraulically, etc.) to each of a plurality of actuators 208 .
- operation of the fluid channels, described below with respect to FIG. 4 may also be under the direction of the controller 210 .
- various fluids may be selectively delivered to the pads 204 and/or the substrate edge 104 via the fluid channels.
- the controller 210 may be adapted to receive feedback signals from the driver and/or actuator 208 , that indicate the amount of energy being exerted to drive the substrate 100 (e.g., rotate a vacuum chuck holding the substrate 100 ) and/or actuate the actuator 208 to push the pad 204 , respectively. These feedback signals may be employed to determine when a particular layer of film has been removed and/or whether a sufficient amount of polishing has occurred.
- FIG. 3 is a perspective view depicting an example embodiment of a substrate polishing system 300 according to the present invention.
- the substrate polishing system 300 shown herein includes three heads 302 . Any number and type of heads 302 may be used in any practicable combination.
- each head 302 may use a differently contoured backing pad 204 (e.g., different contours of the strip, etc.). Any number of heads 302 may be used concurrently, individually, and/or in a sequence.
- the heads 302 may be disposed in different positions and in different orientations (e.g., aligned with the substrate edge 104 , normal to the substrate edge 104 , angled relative to the substrate edge 104 , etc.) to allow the pads 204 and/or polishing tape 206 to polish different portions of the edge 104 of the rotating substrate 100 .
- the heads 302 may be adapted to be oscillated or moved (e.g., angularly translated about a tangential axis of the substrate 100 and/or circumferentially relative to the substrate 100 ) around or along the substrate edge 104 by any suitable means so as to polish different portions of the substrate edge 104 .
- Different heads 302 may be used for different substrates 100 or different types of substrates 100 .
- the polishing unit 400 includes a polishing head 402 .
- the polishing head 402 may include a backing plate 404 , covered by a backing pad 406 .
- the backing plate may be shaped to mimic the shape of the substrate while in other embodiments the backing plate may conform to the shape of the substrate.
- the backing plate 404 may be coupled to the polishing head 402 , while in other embodiments the backing plate 404 may be integrally formed with the polishing head 402 .
- the backing pad 406 may be used to mechanically polish the substrate edge 104 .
- polishing tape 206 may be used to polish the substrate edge 104 , and the backing pad 406 (or roller) may press the polishing tape 206 against the substrate edge 104 .
- the polishing unit 400 may also include a nozzle 408 , disposed at the substrate edge 104 .
- the nozzle 408 may be shaped as a thin curved slit. Other nozzle shapes may be used.
- a deionized water supply may direct deionized water onto the major surface 102 , 102 of the substrate 100 , via a deionized water channel 410 , and the deionized water may be centrifugally pushed out to the rest of the major surface 102 , 102 of the substrate 100 .
- the nozzle 408 may dispense a curtain of fluid, such as N 2 (whereby the curtain of fluid is hereinafter referred to as “N 2 ”).
- gases or fluids may be used.
- other inert gases may be used.
- the shape of the thin slit nozzle 408 may provide a curtain of N 2 between the substrate edge 104 and the polishing head 402 and pad 406 .
- the shape of the nozzle 408 may provide a curtain of N 2 that may be curved or arced, such that the area of the substrate 100 being polished, and a portion of the major surface 102 of the substrate 100 , is surrounded by the N 2 curtain.
- This N 2 curtain may prevent the deionized water from contacting, and potentially damaging, the polishing head 402 .
- the N 2 curtain may also prevent the deionized water from mixing with, and diluting, the chemicals (described below and with respect to FIG. 5 ) used to clean and polish the substrate edge 104 .
- the N 2 curtain may prevent the chemicals (e.g., polishing chemicals) from contacting the major surface 102 of the substrate 100 .
- the chemicals may include, for example, surfactant and/or other known cleaning chemistries.
- the nozzle 408 is positioned at a 90 degree angle with respect to the major surface 102 of the substrate 100
- the nozzle may be positioned at a different angle with respect to the major surface 102 of the substrate 100 .
- the N 2 curtain may also flow in a perpendicular direction to the major surface 102 of the substrate 100 .
- the N 2 curtain may flow towards both the polishing head 402 and the DI water, thereby essentially pushing both the chemicals from the DI water to keep them separate.
- the nozzle 408 may be angled towards the DI water, such that the N 2 curtain pushes the DI water away from the polishing head 402 , further preventing chemical dilution, but may have no effect on the chemicals contacting the substrate edge 104 .
- the nozzle 408 may be angled towards the polishing head 402 , such that the DI water may be allowed to flow towards the polishing head 402 , to a certain extent, but the chemicals are prevented from contacting the major surface 102 of the substrate 100 .
- the chemicals may be applied to and/or through the tape 206 and/or the pad 406 or roller.
- the backing plate 404 may include one or more channels 502 adapted to drip or spray the fluid directly onto or into the pads 204 , 406 .
- the pad 406 may be inflatable and may include a bladder (not shown) with a semi-permeable membrane that allows fluid to be slowly released and transmitted to the polishing tape 206 (e.g., through the pad).
- the pad 204 , 406 may be covered by, made of, and/or include, material that absorbs and/or retains the fluids used (e.g., polyvinyl alcohol (PVA), etc.).
- PVA polyvinyl alcohol
- the chemicals may be sprayed directly onto the substrate 100 .
- heating elements may be used to provide temperature assistance to enhance the wet etch rate of the chemicals used to polish/clean the substrate edge 104 .
- the applied heat may be controlled at different locations to control the resulting material removal profile.
- the materials that enclose the heating elements may be flexible/pliable materials such as rubber, polyimide, etc.
- the polishing unit 400 may also include one or more sponges 500 .
- the sponges 500 may be affixed to the backing plate 404 and separated by the polishing pad 406 . Any suitable fixation means may be used. Other orientations may be used. Additionally, more or fewer sponges 500 may be used.
- the backing plate 404 as described above, may include one or more channels 502 adapted to supply a cleaning/polishing chemical to one or more of the sponges 500 . In the particular example depicted herein, each sponge 500 is coupled to a separate channel 502 .
- a single channel 502 may supply chemicals to multiple sponges 500 , or an individual sponge 500 may receive chemicals from multiple channels 502 .
- the chemicals may be the same type or a different type. Different chemicals may be used to more effectively clean/polish the substrate.
- the sponge 500 may receive different chemicals in sequence, for example.
- a first chemical may flow through the channel 502 and then a second, different chemical may flow through the channel 502 .
- a first chemical may flow through a first channel 502 and then a second chemical may flow through a second channel 502 .
- the sponge 500 may alternatively receive the chemicals from the multiple channels 502 at the same time.
- the same chemicals may be flowed through the multiple channels 502 into the individual sponge 500 to increase the flow of chemicals to the sponge 500 and subsequently the substrate 100 .
- the same chemicals may be flowed through multiple channels 502 into multiple sponges 500 .
- each sponge 500 may receive a different chemical.
- the amount of chemicals supplied to the sponges 500 may be controlled by the controller 210 or operator. The sponges 500 may contact and apply chemicals to the substrate edge 104 during the cleaning/polishing process.
- the polishing pad 406 may include abrasive materials of various minerals and grit sizes, which provide a mechanical polishing action.
- the thin curved slit nozzle 408 may be disposed at the substrate edge 104 , between the substrate edge 104 and the sponges 500 and polishing pad 406 . While the substrate 100 rotates, as indicated by the central curved arrow, and the deionized water is dispersed, the nozzle 408 may dispense a curtain of N 2 , or other suitable gas (e.g., an inert gas).
- the curtain of N 2 is applied between the substrate edge 104 and the sponges 500 and polishing pad 406 , and may prevent the deionized water from contacting and potentially damaging the polishing head 402 . Additionally, the N 2 curtain may also prevent the deionized water from mixing with and diluting the chemicals used to clean and polish the substrate edge 104 . Additionally, the N 2 curtain may also prevent the chemicals from contacting the major surface of the substrate.
- the present invention may employ gravity or suction to cause the runoff not to contaminate or contact other parts of the substrate 100 or system 200 .
- the substrate edge 104 may be cleaned/polished by energy (e.g., megasonic energy), which may be applied to the substrate edge 104 via fluid carrying such energy.
- energy e.g., megasonic energy
- step S 102 a substrate is rotated in a chuck, for example.
- step S 104 an edge of the substrate is contacted with a polishing head.
- a first fluid such as a cleaning chemical
- the chemical may be applied by sponges included in the polishing head.
- a second fluid is directed onto a major surface of the rotating substrate.
- the second fluid may be deionized water. As described above, as the substrate rotates, the water may be centrifugally pushed out to the rest of the major surface of the substrate.
- a third fluid is directed at the major surface of the substrate, such that the third fluid prevents the second fluid from diluting the first fluid.
- the third fluid may be a curtain of N2.
- the curtain of N 2 is applied between the substrate edge 104 and the polishing head 402 , and may prevent the deionized water from contacting and potentially damaging the polishing head 402 . Additionally, the N 2 curtain may also prevent the deionized water from mixing with and diluting the chemicals used to clean and polish the substrate edge 104 . Additionally, the N 2 curtain may also prevent the chemicals from contacting the major surface of the substrate.
- inventive edge polishing apparatus described herein may be employed in apparatuses other than those adapted for bevel and edge polishing and/or removal of films on substrates. Further, as will be apparent to those of ordinary skill in the art, the apparatus describe herein may be employed to polish and/or remove films on an edge of a substrate supported in any orientation (e.g., horizontal, vertical, diagonal, etc).
- the present invention could be modified to clean substrates having other shapes (e.g., a glass or polymer plate for flat panel displays). Further, although processing of a single substrate by the apparatus is shown above, in some embodiments, the apparatus may process a plurality of substrates concurrently.
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Methods and apparatus are provided for concurrently chemically and mechanically polishing a substrate edge. The invention includes a substrate support adapted to rotate a substrate; a polishing head adapted to contact an edge of the substrate, the polishing head including a first channel adapted to apply a first fluid to the edge of the substrate; a second channel adapted to direct a second fluid onto a major surface of the rotating substrate; and a third channel adapted to direct a third fluid at the major surface of the substrate and to prevent the second fluid from diluting the first fluid. Numerous other aspects are provided.
Description
- The present application claims priority from U.S. Provisional Patent Application Ser. No. 60/892,237 filed Feb. 28, 2007, entitled “SUBSTRATE EDGE BEVEL POLISHING SYSTEMS AND METHODS USING CHEMICALS FOR MATERIAL REMOVAL” (Attorney Docket No. 11445/L).
- The present application is also related to the following commonly-assigned, co-pending U.S. patent applications, each of which is hereby incorporated herein by reference in its entirety for all purposes:
- U.S. patent application Ser. No. 11/299,295 filed on Dec. 9, 2005 and entitled “METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE” (Attorney Docket No. 10121);
- U.S. patent application Ser. No. 11/298,555 filed on Dec. 9, 2005 and entitled “METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE” (Attorney Docket No. 10414);
- U.S. patent application Ser. No. 11/693,695 filed on Mar. 29, 2007 and entitled “METHODS AND APPARATUS FOR POLISHING AN EDGE OF A SUBSTRATE” (Attorney Docket No. 10560);
- U.S. Patent Application Ser. No. 60/939,351, filed May 21, 2007, entitled “METHODS AND APPARATUS FOR POLISHING A NOTCH OF A SUBSTRATE USING AN INFLATABLE POLISHING WHEEL” (Attorney Docket No. 10674/L);
- U.S. Patent Application Ser. No. 60/939,353, filed May 21, 2007, entitled “METHODS AND APPARATUS FOR FINDING A SUBSTRATE NOTCH CENTER” (Attorney Docket No. 11244/L);
- U.S. Patent Application Ser. No. 60/939,343, filed May 21, 2007, entitled “METHODS AND APPARATUS TO CONTROL SUBSTRATE BEVEL AND EDGE POLISHING PROFILES OF EPITAXIAL FILMS” (Attorney Docket No. 11417/L);
- U.S. Patent Application Ser. No. 60/939,219, filed May 21, 2007, entitled “METHODS AND APPARATUS FOR POLISHING A NOTCH OF A SUBSTRATE USING A SHAPED BACKING PAD” (Attorney Docket No. 11483/L);
- U.S. Patent Application Ser. No. 60/939,342, filed May 21, 2007, entitled “METHODS AND APPARATUS FOR REMOVAL OF FILMS AND FLAKES FROM THE EDGE OF BOTH SIDES OF A SUBSTRATE USING BACKING PADS” (Attorney Docket No. 11564/L);
- U.S. Patent Application Ser. No. 60/939,350, filed May 21, 2007, entitled “METHODS AND APPARATUS FOR USING A BEVEL POLISHING HEAD WITH AN EFFICIENT TAPE ROUTING ARRANGEMENT” (Attorney Docket No. 11565/L);
- U.S. Patent Application Ser. No. 60/939,344, filed May 21, 2007, entitled “METHODS AND APPARATUS FOR USING A ROLLING BACKING PAD FOR SUBSTRATE POLISHING” (Attorney Docket No. 11566/L);
- U.S. Patent Application Ser. No. 60/939,333, filed May 21, 2007, entitled “METHODS AND APPARATUS FOR SUBSTRATE EDGE POLISHING USING A POLISHING ARM” (Attorney Docket No. 11567/L);
- U.S. Patent Application Ser. No. 60/939,337, filed May 21, 2007, entitled “METHODS AND APPARATUS FOR HIGH PERFORMANCE SUBSTRATE BEVEL AND EDGE POLISHING IN SEMICONDUCTOR MANUFACTURE” (Attorney Docket No. 11809/L);
- U.S. Patent Application Ser. No. 60/939,212, filed May 21, 2007, entitled “METHODS AND APPARATUS FOR IDENTIFYING A SUBSTRATE EDGE PROFILE AND ADJUSTING THE PROCESSING OF THE SUBSTRATE ACCORDING TO THE IDENTIFIED EDGE PROFILE” (Attorney Docket No. 11695/L);
- U.S. Patent Application Ser. No. 60/99,228, filed May 21, 2007, entitled “METHODS AND APPARATUS FOR POLISHING A NOTCH OF A SUBSTRATE BY SUBSTRATE VIBRATION” (Attorney Docket No. 11952/L); and
- U.S. Patent Application Ser. No. 60/939,209, filed May 21, 2007, entitled “METHODS AND APPARATUS FOR CONTROLLING THE SIZE OF AN EDGE EXCLUSION ZONE OF A SUBSTRATE” (Attorney Docket No. 11987/L).
- The present invention relates generally to electronic device processing, and more particularly to methods and apparatus for cleaning an edge of a substrate.
- During electronic device manufacturing, undesirable materials may build up on the edge of a substrate. The materials may include dielectrics, photoresist and metals used in IC manufacture. Therefore, it may be desirable to clean or polish the bevel and edge of the substrate to remove these materials. What is needed are systems, methods and apparatus for cleaning the edge of substrates without damaging the major surfaces of the substrates.
- In aspects of the invention, an apparatus is provided for concurrently chemically and mechanically polishing a substrate edge. The apparatus comprises a substrate support adapted to rotate a substrate; a polishing head adapted to contact an edge of the substrate, the polishing head including a first channel adapted to apply a first fluid to the edge of the substrate; a second channel adapted to direct a second fluid onto a major surface of the rotating substrate; and a third channel adapted to direct a third fluid at the major surface of the substrate and to prevent the second fluid from diluting the first fluid.
- In other aspects of the invention, a system is provided for concurrently chemically and mechanically polishing a substrate edge. The system comprises a substrate support adapted to rotate a substrate; a polishing head, adapted to contact an edge of a substrate, the polishing head including a first channel adapted to apply a first fluid to the edge of the substrate; a second channel adapted to direct a second fluid onto a major surface of the rotating substrate; a third channel adapted to direct a third fluid at the major surface of the substrate and to prevent the second fluid from diluting the first fluid; and a controller adapted to operate the concurrent chemical and mechanical polishing of the edge of the substrate.
- In yet other aspects of the invention a method is provided for concurrently chemically and mechanically polishing a substrate edge. The method includes the steps of (1) rotating a substrate; (2) contacting an edge of the substrate with a polishing head; (3) applying a first fluid to the edge of the substrate via the polishing head; (4) directing a second fluid onto a major surface of the rotating substrate; and (5) directing a third fluid at the major surface of the substrate, wherein the third fluid prevents the second fluid from diluting the first fluid.
- Other features and aspects of the present invention will become more fully apparent from the following detailed description, the appended claims and the accompanying drawings.
-
FIG. 1 is a schematic illustration of a cross-section of a portion of a substrate. -
FIG. 2 is a schematic illustration depicting an example embodiment of an edge cleaning system according to the present invention. -
FIG. 3 is a perspective view depicting another example embodiment of an edge cleaning system according to the present invention. -
FIG. 4 is a side view of a polishing unit according to the present invention. -
FIG. 5 is a front view of a polishing unit according to the present invention. -
FIG. 6 is a flow chart depicting an example application method of embodiments of an edge cleaning system according to the present invention. - The present invention provides improved methods and apparatus for cleaning and/or polishing the edge of a substrate. The edge of a substrate may be polished by application of an abrasive polishing pad or film contacting the substrate edge via a polishing head and by application of chemicals onto the substrate edge, as the substrate is rotated or otherwise moved (e.g., oscillated). As the substrate rotates, deionized water (hereinafter “DI water”) may be applied to the major surface (non-beveled and non-edge surface) of the substrate to prevent potential contamination and to remove material that accumulates as a result of polishing/cleaning. However, it may be undesirable for the DI water to contact the polishing head or dilute the chemicals. According to the present invention, a curtain of fluid, and in a preferred embodiment a gas, such as N2, is directed at the major surface of the substrate such that the gas prevents the DI water from contacting the polishing head and/or diluting the polishing chemicals. In some embodiments the curtain of gas may be curbed to form an arc surrounding the area on the substrate to be polished, such that the interior of the arc faces the polishing head. In some embodiments, the interior of the arc may face the DI water supply to contain the DI water and push it away from the polishing head.
- Turning to
FIG. 1 , asubstrate 100 may include twomajor surfaces edge 104. Eachmajor surface substrate 100 may include adevice region exclusion region major surfaces exclusion regions device regions edge 104. Theedge 104 of asubstrate 100 may include anouter edge 110 andbevels bevels outer edge 110 and theexclusion regions major surfaces outer edge 110 and at least onebevel substrate 100 without affecting thedevice regions exclusion regions - Turning to
FIG. 2 , a schematic illustration of an example embodiment of a polishinghead system 200, including a polishinghead 201, adapted to polish theedge 104 of asubstrate 100 is provided. Thesubstrate 100 may be held or supported and rotated by avacuum chuck 202, for example. Other suitable substrate support and rotation means may be used. For example, thesubstrate 100 may be rotated by driver rollers and guide rollers, etc. The polishinghead 201 may include abacking pad 204, a roller, and/or an inflatable pad. In either case, the pad, roller and/or inflatable pad may be soft and/or include or develop contours to conform to the shape of thesubstrate edge 104. In some embodiments, thebacking pad 204 may also include abrasive particles and be used to polish thesubstrate edge 104. Additionally or alternatively, thebacking pad 204 may be pressed against a polishingtape 206, used to polish thesubstrate edge 104. Thesystem 200 may further include an actuator 208 (e.g., a pneumatic slide, hydraulic ram, servo motor driven pusher, etc.). As thesubstrate 100 rotates, theactuator 208 may press thebacking pad 204, and hence the polishingtape 206, against thesubstrate edge 104. Alternatively or additionally, theactuator 208 may be adjustable, and may also be used to push theentire head 201 towards thesubstrate 100. Alternatively, a biasing device (e.g., a spring) may be employed to mount thepad 204 to thehead 201, to provide flexible/dynamic counter pressure to thepad 204. In some embodiments, thesubstrate 100 may be in contact with the polishingtape 206 for about 15 to 150 seconds depending on the type of tape used, the grit of the tape, the rate of rotation, the amount of polishing required, etc. More or less time may be used. The contact between the polishingtape 206, and thesubstrate edge 104, as the polishingtape 206 is pressed against thesubstrate edge 104 by thebacking pad 204, combined with the particular rotational speed of thesubstrate 100, may provide relative movement between the polishingtape 206 and thesubstrate edge 104, resulting in polishing thesubstrate edge 104. Depending on the amount of force applied by theactuator 208, the resiliency of thepad 204 selected, the amount of inflation of an inflatable pad, and/or the amount of tension on the polishingtape 206, a controlled amount of pressure may be applied to polish thesubstrate edge 104. Thus, thesystem 200 may provide precise control of an edge polish process, which may be used to compensate for different edge geometries and changes in thesubstrate 100 as material is removed from thesubstrate edge 104. - The
pad 204 may be made of material such as, for example, an acetal resin (e.g., Delrin® manufactured by DuPont Corporation), PVDF, polyurethane closed cell foam, silicon rubber, etc. Other suitable materials may be used. Such materials may have resilience or an ability to conform that is a function of the thickness or density of thepad 204. The material may be selected based upon its resilience. The desired resilience may be selected based upon the type of polishing required. - In some embodiments, the degree to which the
pad 204 may conform to thesubstrate edge 104 may be adjustable. For example, thepad 204 may be, or include, an inflatable bladder, as described in Application Ser. No. 60/939,333 (Attorney Docket No. 11567/L), cited above, which may be inflatable by air, liquid or other fluid. The amount of fluid filling thepad 204 may be adjusted, such that thepad 204 may suitably conform to thesubstrate edge 104. - The
substrate 100 may be rotated, for example, in a horizontal plane. Thesubstrate edge 104 may be aligned with, or normal to, the polishingtape 206,pad 204 and/or polishinghead 201. In additional or alternative embodiments, thesubstrate 100 may be rotated in a vertical plane, other non-horizontal plane, and/or be moved between different planes of rotation. - In the embodiment described herein, as the
substrate 100 rotates, the polishinghead 201 may rock around thesubstrate edge 104 to polish theentire edge 104. The angle of rocking may include, for example, plus or minus 90 degrees. Other rocking angles may be used. In operation, this is achieved by angularly translating thehead 201, and consequently thebacking pad 204 and polishingtape 206 in contact with, and contoured to, thesubstrate edge 104, around an axis that is tangential to theouter edge 110 of thesubstrate 100 as it is rotated. In some embodiments, thehead 201 may be adapted to continuously or intermittently oscillate between the various positions. Thehead 201 may be moved by drivers (not shown) under the direction of a programmed or user operated controller 210 (shown inFIG. 3 ). Alternatively, thehead 201 may be fixed and/or only adjusted while thesubstrate 100 is not being rotated. In yet other embodiments, thesubstrate 100 may be held fixed while thehead 201 is oscillated (as described above), as well as rotated circumferentially around thesubstrate 100. In some embodiments, the key parameters to control the edge polishing area may be the angle of rocking, the center of rotation for rocking, and the contour of the backing pad. - In some embodiments, fluids or chemicals may be used to aid in the polishing or washing away of accumulated particles, and may be delivered to the
substrate edge 104, as further described below with respect toFIG. 4 . - As described above, in some embodiments, the controller 210 (shown in
FIG. 3 ), (e.g., a programmed computer, a programmed processor, a gate array, a logic circuit, an operator directed valve system, an embedded real time processor, etc.) may control the driver(s) used to rotate thesubstrate 100 and theactuator 208 used to push thepad 204 against thesubstrate edge 104. Note that thecontroller 210 may be coupled (e.g., electrically, mechanically, pneumatically, hydraulically, etc.) to each of a plurality ofactuators 208. Likewise, operation of the fluid channels, described below with respect toFIG. 4 , may also be under the direction of thecontroller 210. Under direction of thecontroller 210, various fluids may be selectively delivered to thepads 204 and/or thesubstrate edge 104 via the fluid channels. Thecontroller 210 may be adapted to receive feedback signals from the driver and/oractuator 208, that indicate the amount of energy being exerted to drive the substrate 100 (e.g., rotate a vacuum chuck holding the substrate 100) and/or actuate theactuator 208 to push thepad 204, respectively. These feedback signals may be employed to determine when a particular layer of film has been removed and/or whether a sufficient amount of polishing has occurred. -
FIG. 3 is a perspective view depicting an example embodiment of asubstrate polishing system 300 according to the present invention. Thesubstrate polishing system 300 shown herein includes threeheads 302. Any number and type ofheads 302 may be used in any practicable combination. In addition, in such multi-head embodiments, eachhead 302 may use a differently contoured backing pad 204 (e.g., different contours of the strip, etc.). Any number ofheads 302 may be used concurrently, individually, and/or in a sequence. Theheads 302 may be disposed in different positions and in different orientations (e.g., aligned with thesubstrate edge 104, normal to thesubstrate edge 104, angled relative to thesubstrate edge 104, etc.) to allow thepads 204 and/or polishingtape 206 to polish different portions of theedge 104 of therotating substrate 100. Theheads 302 may be adapted to be oscillated or moved (e.g., angularly translated about a tangential axis of thesubstrate 100 and/or circumferentially relative to the substrate 100) around or along thesubstrate edge 104 by any suitable means so as to polish different portions of thesubstrate edge 104.Different heads 302 may be used fordifferent substrates 100 or different types ofsubstrates 100. - Turning to
FIG. 4 , a side view of apolishing unit 400 according to the present invention is depicted. In the example embodiment shown herein, the polishingunit 400 includes a polishinghead 402. The polishinghead 402 may include abacking plate 404, covered by abacking pad 406. In some embodiments the backing plate may be shaped to mimic the shape of the substrate while in other embodiments the backing plate may conform to the shape of the substrate. In some embodiments thebacking plate 404 may be coupled to the polishinghead 402, while in other embodiments thebacking plate 404 may be integrally formed with the polishinghead 402. Thebacking pad 406 may be used to mechanically polish thesubstrate edge 104. In some embodiments, as described above, polishingtape 206 may be used to polish thesubstrate edge 104, and the backing pad 406 (or roller) may press the polishingtape 206 against thesubstrate edge 104. The polishingunit 400 may also include anozzle 408, disposed at thesubstrate edge 104. Thenozzle 408 may be shaped as a thin curved slit. Other nozzle shapes may be used. As described above, as thesubstrate 100 rotates, a deionized water supply may direct deionized water onto themajor surface substrate 100, via adeionized water channel 410, and the deionized water may be centrifugally pushed out to the rest of themajor surface substrate 100. Additionally, while thesubstrate 100 rotates, thenozzle 408 may dispense a curtain of fluid, such as N2 (whereby the curtain of fluid is hereinafter referred to as “N2”). Other gases or fluids may be used. For example, other inert gases may be used. The shape of thethin slit nozzle 408 may provide a curtain of N2 between thesubstrate edge 104 and the polishinghead 402 andpad 406. In some embodiments the shape of thenozzle 408 may provide a curtain of N2 that may be curved or arced, such that the area of thesubstrate 100 being polished, and a portion of themajor surface 102 of thesubstrate 100, is surrounded by the N2 curtain. This N2 curtain may prevent the deionized water from contacting, and potentially damaging, the polishinghead 402. Additionally, the N2 curtain may also prevent the deionized water from mixing with, and diluting, the chemicals (described below and with respect toFIG. 5 ) used to clean and polish thesubstrate edge 104. Alternatively, the N2 curtain may prevent the chemicals (e.g., polishing chemicals) from contacting themajor surface 102 of thesubstrate 100. The chemicals may include, for example, surfactant and/or other known cleaning chemistries. - While in the exemplary embodiment shown here, the
nozzle 408 is positioned at a 90 degree angle with respect to themajor surface 102 of thesubstrate 100, in alternate embodiments the nozzle may be positioned at a different angle with respect to themajor surface 102 of thesubstrate 100. For example, when thenozzle 408 is perpendicular (or 90 degrees) to themajor surface 102 of thesubstrate 100, the N2 curtain may also flow in a perpendicular direction to themajor surface 102 of thesubstrate 100. When the N2 curtain contacts with the major surface of thesubstrate 100, it may flow towards both the polishinghead 402 and the DI water, thereby essentially pushing both the chemicals from the DI water to keep them separate. In another exemplary embodiment, thenozzle 408 may be angled towards the DI water, such that the N2 curtain pushes the DI water away from the polishinghead 402, further preventing chemical dilution, but may have no effect on the chemicals contacting thesubstrate edge 104. In yet another exemplary embodiment, thenozzle 408 may be angled towards the polishinghead 402, such that the DI water may be allowed to flow towards the polishinghead 402, to a certain extent, but the chemicals are prevented from contacting themajor surface 102 of thesubstrate 100. - In some embodiments the chemicals may be applied to and/or through the
tape 206 and/or thepad 406 or roller. Thebacking plate 404 may include one ormore channels 502 adapted to drip or spray the fluid directly onto or into thepads pad 406 may be inflatable and may include a bladder (not shown) with a semi-permeable membrane that allows fluid to be slowly released and transmitted to the polishing tape 206 (e.g., through the pad). In such embodiments, thepad substrate 100. - In an alternative embodiment, instead of a
polishing pad 406 and/or in combination with thepolishing pad 406, heating elements (not shown) may be used to provide temperature assistance to enhance the wet etch rate of the chemicals used to polish/clean thesubstrate edge 104. The applied heat may be controlled at different locations to control the resulting material removal profile. As with the backing plate, the materials that enclose the heating elements may be flexible/pliable materials such as rubber, polyimide, etc. - Turning to
FIG. 5 , a front view of thepolishing unit 400 described inFIG. 4 , according to the present invention is depicted. In some embodiments, the polishingunit 400 may also include one ormore sponges 500. Thesponges 500 may be affixed to thebacking plate 404 and separated by thepolishing pad 406. Any suitable fixation means may be used. Other orientations may be used. Additionally, more orfewer sponges 500 may be used. Thebacking plate 404, as described above, may include one ormore channels 502 adapted to supply a cleaning/polishing chemical to one or more of thesponges 500. In the particular example depicted herein, eachsponge 500 is coupled to aseparate channel 502. In some embodiments, for example, asingle channel 502 may supply chemicals tomultiple sponges 500, or anindividual sponge 500 may receive chemicals frommultiple channels 502. The chemicals may be the same type or a different type. Different chemicals may be used to more effectively clean/polish the substrate. In either case, thesponge 500 may receive different chemicals in sequence, for example. In other words, in the case of anindividual sponge 500 and asingle channel 502, a first chemical may flow through thechannel 502 and then a second, different chemical may flow through thechannel 502. In the case of theindividual sponge 500 andmultiple channels 502, for example, a first chemical may flow through afirst channel 502 and then a second chemical may flow through asecond channel 502. In the case of theindividual sponge 500 withmultiple channels 502, thesponge 500 may alternatively receive the chemicals from themultiple channels 502 at the same time. In some embodiments, the same chemicals may be flowed through themultiple channels 502 into theindividual sponge 500 to increase the flow of chemicals to thesponge 500 and subsequently thesubstrate 100. In some embodiments, the same chemicals may be flowed throughmultiple channels 502 intomultiple sponges 500. Alternatively, eachsponge 500 may receive a different chemical. Additionally, the amount of chemicals supplied to thesponges 500 may be controlled by thecontroller 210 or operator. Thesponges 500 may contact and apply chemicals to thesubstrate edge 104 during the cleaning/polishing process. Additionally, as described above, thepolishing pad 406, similarly to the polishing tape described above, may include abrasive materials of various minerals and grit sizes, which provide a mechanical polishing action. The thincurved slit nozzle 408 may be disposed at thesubstrate edge 104, between thesubstrate edge 104 and thesponges 500 and polishingpad 406. While thesubstrate 100 rotates, as indicated by the central curved arrow, and the deionized water is dispersed, thenozzle 408 may dispense a curtain of N2, or other suitable gas (e.g., an inert gas). As described above, the curtain of N2 is applied between thesubstrate edge 104 and thesponges 500 and polishingpad 406, and may prevent the deionized water from contacting and potentially damaging the polishinghead 402. Additionally, the N2 curtain may also prevent the deionized water from mixing with and diluting the chemicals used to clean and polish thesubstrate edge 104. Additionally, the N2 curtain may also prevent the chemicals from contacting the major surface of the substrate. - Additionally, the present invention may employ gravity or suction to cause the runoff not to contaminate or contact other parts of the
substrate 100 orsystem 200. Further, thesubstrate edge 104 may be cleaned/polished by energy (e.g., megasonic energy), which may be applied to thesubstrate edge 104 via fluid carrying such energy. - Turning to
FIG. 6 , a flow chart illustrating anexemplary method 100 of the present invention is depicted. Although five discrete sequential steps are depicted, it should be understood that any number of steps, sub-steps, and/or super-steps may be combined or divided out and performed in different orders and/or concurrently. The particular sequence depicted is merely exemplarily and not necessarily required to perform various method embodiments of the present invention. In other words, for example, in some embodiments, all or some of the steps may be performed concurrently or in reverse order. In step S102, a substrate is rotated in a chuck, for example. In step S104, an edge of the substrate is contacted with a polishing head. A first fluid, such as a cleaning chemical, is applied to the edge of the substrate via the polishing head in step S106. The chemical may be applied by sponges included in the polishing head. In step S108 a second fluid is directed onto a major surface of the rotating substrate. The second fluid may be deionized water. As described above, as the substrate rotates, the water may be centrifugally pushed out to the rest of the major surface of the substrate. In step S110 a third fluid is directed at the major surface of the substrate, such that the third fluid prevents the second fluid from diluting the first fluid. The third fluid may be a curtain of N2. As described above, the curtain of N2 is applied between thesubstrate edge 104 and the polishinghead 402, and may prevent the deionized water from contacting and potentially damaging the polishinghead 402. Additionally, the N2 curtain may also prevent the deionized water from mixing with and diluting the chemicals used to clean and polish thesubstrate edge 104. Additionally, the N2 curtain may also prevent the chemicals from contacting the major surface of the substrate. - It should be understood that the inventive edge polishing apparatus described herein may be employed in apparatuses other than those adapted for bevel and edge polishing and/or removal of films on substrates. Further, as will be apparent to those of ordinary skill in the art, the apparatus describe herein may be employed to polish and/or remove films on an edge of a substrate supported in any orientation (e.g., horizontal, vertical, diagonal, etc).
- Further, it should be understood that although only examples of cleaning a round substrate are disclosed, the present invention could be modified to clean substrates having other shapes (e.g., a glass or polymer plate for flat panel displays). Further, although processing of a single substrate by the apparatus is shown above, in some embodiments, the apparatus may process a plurality of substrates concurrently.
- The foregoing description discloses only exemplary embodiments of the invention. Modifications of the above disclosed apparatus and methods which fall within the scope of the invention will be readily apparent to those of ordinary skill in the art. Accordingly, while the present invention has been disclosed in connection with exemplary embodiments thereof, it should be understood that other embodiments may fall within the spirit and scope of the invention, as defined by the following claims.
Claims (25)
1. An apparatus for concurrently chemically and mechanically polishing a substrate edge, the apparatus comprising:
a substrate support adapted to rotate a substrate;
a polishing head adapted to contact an edge of the substrate, the polishing head including a first channel adapted to apply a first fluid to the edge of the substrate;
a second channel adapted to direct a second fluid onto a major surface of the rotating substrate; and
a third channel adapted to direct a third fluid at the major surface of the substrate and to prevent the second fluid from diluting the first fluid.
2. The apparatus of claim 1 wherein the first channel is further adapted to apply the first fluid to the edge of the substrate where the polishing head contacts the edge.
3. The apparatus of claim 1 wherein the polishing head includes one or more sponges adapted to contact the edge of the substrate.
4. The apparatus of claim 3 wherein the first channel provides the first fluid to the one or more sponges.
5. The apparatus of claim 1 wherein the polishing head includes a pad.
6. The apparatus of claim 1 wherein the polishing head includes a polishing tape.
7. The apparatus of claim 1 wherein the polishing head includes a conformal backing plate.
8. The apparatus of claim 1 wherein the polishing head includes a shaped backing plate.
9. The apparatus of claim 1 wherein the second fluid is deionized water.
10. The apparatus of claim 1 wherein the shape of the third fluid forms an arc surrounding the edge of the substrate contacted by the polishing head and a portion of the major surface of the substrate.
11. A system for concurrently chemically and mechanically polishing a substrate edge, the system comprising:
a substrate support adapted to rotate a substrate;
a polishing head adapted to contact an edge of a substrate,
the polishing head including a first channel adapted to apply a first fluid to the edge of the substrate;
a second channel adapted to direct a second fluid onto a major surface of the rotating substrate;
a third channel adapted to direct a third fluid at the major surface of the substrate and to prevent the second fluid from diluting the first fluid; and
a controller adapted to operate the concurrent chemical and mechanical polishing of the edge of the substrate.
12. The system of claim 11 wherein the shape of the third fluid forms an arc surrounding the edge of the substrate contacted by the polishing head and a portion of the major surface of the substrate.
13. The system of claim 12 , further comprising a thin curved slit nozzle adapted to form the arc shape of the third fluid.
14. The system of claim 11 wherein the third fluid is N2.
15. The system of claim 11 wherein the controller is adapted to operate the direction of at least one of the second and third fluids.
16. The system of claim 11 wherein the controller is adapted to operate the application of the first fluid to the edge of the substrate.
17. The system of claim 11 wherein the first channel is further adapted to apply the first fluid to the edge of the substrate where the polishing head contacts the edge.
18. The system of claim 11 wherein the polishing head includes one or more sponges adapted to contact the edge of the substrate.
19. The system of claim 18 wherein the first channel provides the first fluid to the one or more sponges.
20. A method for concurrently chemically and mechanically polishing a substrate edge, the method comprising:
rotating a substrate;
contacting an edge of the substrate with a polishing head;
applying a first fluid to the edge of the substrate via the polishing head;
directing a second fluid onto a major surface of the rotating substrate; and
directing a third fluid at the major surface of the substrate, wherein the third fluid prevents the second fluid from diluting the first fluid.
21. The method of claim 20 further comprising:
arcing the third fluid such that the arc surrounds the edge of the substrate contacted by the polishing head and a portion of the major surface of the substrate.
22. The method of claim 20 further comprising:
rocking the polishing head about the edge of the substrate.
23. The method of claim 20 further comprising:
pressing a polishing tape against the edge of the substrate via the polishing head.
24. The method of claim 20 further comprising:
pressing a polishing pad against the edge of the substrate via the polishing head.
25. The method of claim 20 wherein the polishing head includes at least one sponge, and the first fluid is applied to the edge of the substrate via the at least one sponge.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/039,418 US20080207093A1 (en) | 2007-02-28 | 2008-02-28 | Methods and apparatus for cleaning a substrate edge using chemical and mechanical polishing |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US89223707P | 2007-02-28 | 2007-02-28 | |
US12/039,418 US20080207093A1 (en) | 2007-02-28 | 2008-02-28 | Methods and apparatus for cleaning a substrate edge using chemical and mechanical polishing |
Publications (1)
Publication Number | Publication Date |
---|---|
US20080207093A1 true US20080207093A1 (en) | 2008-08-28 |
Family
ID=39716431
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/039,418 Abandoned US20080207093A1 (en) | 2007-02-28 | 2008-02-28 | Methods and apparatus for cleaning a substrate edge using chemical and mechanical polishing |
Country Status (3)
Country | Link |
---|---|
US (1) | US20080207093A1 (en) |
TW (1) | TW200845172A (en) |
WO (1) | WO2008106221A1 (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080293337A1 (en) * | 2007-05-21 | 2008-11-27 | Applied Materials, Inc. | Methods and apparatus for polishing a notch of a substrate by substrate vibration |
US20100105291A1 (en) * | 2008-10-24 | 2010-04-29 | Applied Materials, Inc. | Methods and apparatus for polishing a notch of a substrate |
US20100105299A1 (en) * | 2008-10-24 | 2010-04-29 | Applied Materials, Inc. | Methods and apparatus for polishing an edge and/or notch of a substrate |
US20100105294A1 (en) * | 2008-10-24 | 2010-04-29 | Applied Materials, Inc. | Methods and apparatus to minimize the effect of tape tension in electronic device polishing |
JP2014037014A (en) * | 2012-08-13 | 2014-02-27 | Daito Electron Co Ltd | Wafer chamfering processing method, wafer chamfering processing device, and grindstone angle adjusting fixture |
US20140187126A1 (en) * | 2012-12-27 | 2014-07-03 | Ebara Corporation | Polishing apparatus and polishing method |
US8926402B2 (en) | 2010-11-26 | 2015-01-06 | Ebara Corporation | Method of polishing a substrate using a polishing tape having fixed abrasive |
US20180277401A1 (en) * | 2017-03-27 | 2018-09-27 | Ebara Corporation | Substrate processing method and apparatus |
CN110370117A (en) * | 2019-07-24 | 2019-10-25 | 安庆师范大学 | A kind of all-around intelligentization overturning edging system applied to circuit board processing |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105500141A (en) * | 2015-12-29 | 2016-04-20 | 苏州市诚品精密机械有限公司 | Edger unit for cylindrical workpieces |
Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5545076A (en) * | 1994-05-16 | 1996-08-13 | Samsung Electronics Co., Ltd. | Apparatus for gringing a semiconductor wafer while removing dust therefrom |
US6234874B1 (en) * | 1998-01-05 | 2001-05-22 | Micron Technology, Inc. | Wafer processing apparatus |
US6267649B1 (en) * | 1999-08-23 | 2001-07-31 | Industrial Technology Research Institute | Edge and bevel CMP of copper wafer |
US20010011002A1 (en) * | 2000-01-28 | 2001-08-02 | Steere Robert E. | Wafer processing machine |
US6422930B2 (en) * | 2000-04-25 | 2002-07-23 | Speedfam Co., Ltd. | Apparatus for removing deposited film |
US20020098787A1 (en) * | 2001-01-09 | 2002-07-25 | Junji Kunisawa | Polishing apparatus |
US20050026455A1 (en) * | 2003-05-30 | 2005-02-03 | Satomi Hamada | Substrate processing apparatus and substrate processing method |
US20050064703A1 (en) * | 2000-12-04 | 2005-03-24 | Fumio Kondo | Substrate processing method |
US6955588B1 (en) * | 2004-03-31 | 2005-10-18 | Lam Research Corporation | Method of and platen for controlling removal rate characteristics in chemical mechanical planarization |
US20050250423A1 (en) * | 2001-11-26 | 2005-11-10 | Kabushiki Kaisha Toshiba | Method for manufacturing semiconductor device and polishing apparatus |
US6992009B2 (en) * | 2001-09-11 | 2006-01-31 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device |
US20060094343A1 (en) * | 2004-04-20 | 2006-05-04 | Nihon Microcoating Co., Ltd. | Polishing machine |
US20060252355A1 (en) * | 2004-11-16 | 2006-11-09 | Nihon Micro Coating Co., Ltd. | Polishing tape and method |
US20070093064A1 (en) * | 2005-10-20 | 2007-04-26 | Dai Fukushima | Polishing method of Cu film and method for manufacturing semiconductor device |
US20070148914A1 (en) * | 2005-12-22 | 2007-06-28 | Etsurou Morita | Process for Regeneration of a Layer Transferred Wafer and Regenerated Layer Transferred Wafer |
US20070238393A1 (en) * | 2006-03-30 | 2007-10-11 | Shin Ho S | Methods and apparatus for polishing an edge of a substrate |
US7303463B2 (en) * | 2005-12-05 | 2007-12-04 | Nec Electronics Corporation | Semiconductor wafer polishing apparatus, and method of polishing semiconductor wafer |
US20080188167A1 (en) * | 2002-02-12 | 2008-08-07 | You Ishii | Substrate processing apparatus |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6722964B2 (en) * | 2000-04-04 | 2004-04-20 | Ebara Corporation | Polishing apparatus and method |
US7101260B2 (en) * | 2002-07-29 | 2006-09-05 | Nanoclean Technologies, Inc. | Methods for resist stripping and other processes for cleaning surfaces substantially free of contaminants |
US7165282B2 (en) * | 2003-10-17 | 2007-01-23 | Dreamwell, Ltd. | Hinged foam assembly for mattress manufacturing |
WO2006049269A1 (en) * | 2004-11-01 | 2006-05-11 | Ebara Corporation | Polishing apparatus |
-
2008
- 2008-02-28 WO PCT/US2008/002701 patent/WO2008106221A1/en active Application Filing
- 2008-02-28 US US12/039,418 patent/US20080207093A1/en not_active Abandoned
- 2008-02-29 TW TW097107174A patent/TW200845172A/en unknown
Patent Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5545076A (en) * | 1994-05-16 | 1996-08-13 | Samsung Electronics Co., Ltd. | Apparatus for gringing a semiconductor wafer while removing dust therefrom |
US6234874B1 (en) * | 1998-01-05 | 2001-05-22 | Micron Technology, Inc. | Wafer processing apparatus |
US6267649B1 (en) * | 1999-08-23 | 2001-07-31 | Industrial Technology Research Institute | Edge and bevel CMP of copper wafer |
US20010011002A1 (en) * | 2000-01-28 | 2001-08-02 | Steere Robert E. | Wafer processing machine |
US6422930B2 (en) * | 2000-04-25 | 2002-07-23 | Speedfam Co., Ltd. | Apparatus for removing deposited film |
US20050064703A1 (en) * | 2000-12-04 | 2005-03-24 | Fumio Kondo | Substrate processing method |
US20020098787A1 (en) * | 2001-01-09 | 2002-07-25 | Junji Kunisawa | Polishing apparatus |
US6992009B2 (en) * | 2001-09-11 | 2006-01-31 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device |
US20050250423A1 (en) * | 2001-11-26 | 2005-11-10 | Kabushiki Kaisha Toshiba | Method for manufacturing semiconductor device and polishing apparatus |
US20080188167A1 (en) * | 2002-02-12 | 2008-08-07 | You Ishii | Substrate processing apparatus |
US20050026455A1 (en) * | 2003-05-30 | 2005-02-03 | Satomi Hamada | Substrate processing apparatus and substrate processing method |
US6955588B1 (en) * | 2004-03-31 | 2005-10-18 | Lam Research Corporation | Method of and platen for controlling removal rate characteristics in chemical mechanical planarization |
US20060094343A1 (en) * | 2004-04-20 | 2006-05-04 | Nihon Microcoating Co., Ltd. | Polishing machine |
US20060252355A1 (en) * | 2004-11-16 | 2006-11-09 | Nihon Micro Coating Co., Ltd. | Polishing tape and method |
US20070093064A1 (en) * | 2005-10-20 | 2007-04-26 | Dai Fukushima | Polishing method of Cu film and method for manufacturing semiconductor device |
US7303463B2 (en) * | 2005-12-05 | 2007-12-04 | Nec Electronics Corporation | Semiconductor wafer polishing apparatus, and method of polishing semiconductor wafer |
US20070148914A1 (en) * | 2005-12-22 | 2007-06-28 | Etsurou Morita | Process for Regeneration of a Layer Transferred Wafer and Regenerated Layer Transferred Wafer |
US20070238393A1 (en) * | 2006-03-30 | 2007-10-11 | Shin Ho S | Methods and apparatus for polishing an edge of a substrate |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080293337A1 (en) * | 2007-05-21 | 2008-11-27 | Applied Materials, Inc. | Methods and apparatus for polishing a notch of a substrate by substrate vibration |
US20100105291A1 (en) * | 2008-10-24 | 2010-04-29 | Applied Materials, Inc. | Methods and apparatus for polishing a notch of a substrate |
US20100105299A1 (en) * | 2008-10-24 | 2010-04-29 | Applied Materials, Inc. | Methods and apparatus for polishing an edge and/or notch of a substrate |
US20100105294A1 (en) * | 2008-10-24 | 2010-04-29 | Applied Materials, Inc. | Methods and apparatus to minimize the effect of tape tension in electronic device polishing |
US8926402B2 (en) | 2010-11-26 | 2015-01-06 | Ebara Corporation | Method of polishing a substrate using a polishing tape having fixed abrasive |
JP2014037014A (en) * | 2012-08-13 | 2014-02-27 | Daito Electron Co Ltd | Wafer chamfering processing method, wafer chamfering processing device, and grindstone angle adjusting fixture |
US20140187126A1 (en) * | 2012-12-27 | 2014-07-03 | Ebara Corporation | Polishing apparatus and polishing method |
US9666440B2 (en) * | 2012-12-27 | 2017-05-30 | Ebara Corporation | Polishing apparatus and polishing method |
US20180277401A1 (en) * | 2017-03-27 | 2018-09-27 | Ebara Corporation | Substrate processing method and apparatus |
US10811284B2 (en) * | 2017-03-27 | 2020-10-20 | Ebara Corporation | Substrate processing method and apparatus |
CN110370117A (en) * | 2019-07-24 | 2019-10-25 | 安庆师范大学 | A kind of all-around intelligentization overturning edging system applied to circuit board processing |
Also Published As
Publication number | Publication date |
---|---|
TW200845172A (en) | 2008-11-16 |
WO2008106221A1 (en) | 2008-09-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20080207093A1 (en) | Methods and apparatus for cleaning a substrate edge using chemical and mechanical polishing | |
US8142260B2 (en) | Methods and apparatus for removal of films and flakes from the edge of both sides of a substrate using backing pads | |
US20080293336A1 (en) | Methods and apparatus to control substrate bevel and edge polishing profiles of films | |
US7993485B2 (en) | Methods and apparatus for processing a substrate | |
US20090029629A1 (en) | Methods and apparatus for polishing an edge of a substrate | |
US20080293335A1 (en) | Methods and apparatus for substrate edge polishing using a polishing arm | |
US20080293331A1 (en) | Methods and apparatus for low cost and high performance polishing tape for substrate bevel and edge polishing in seminconductor manufacturing | |
US20080293341A1 (en) | Methods and apparatus for using a rolling backing pad for substrate polishing | |
US20070131653A1 (en) | Methods and apparatus for processing a substrate | |
US20080293334A1 (en) | Methods and apparatus for using a bevel polishing head with an efficient tape routing arrangement | |
US9649739B2 (en) | Polishing apparatus | |
JP2012183637A (en) | Method and apparatus for processing substrate | |
US10256120B2 (en) | Systems, methods and apparatus for post-chemical mechanical planarization substrate buff pre-cleaning | |
JP2001054855A (en) | Carrier head with reformed flexible membrane | |
US6343977B1 (en) | Multi-zone conditioner for chemical mechanical polishing system | |
US20040002291A1 (en) | Partial-membrane carrier head | |
US20100105291A1 (en) | Methods and apparatus for polishing a notch of a substrate | |
US20100105299A1 (en) | Methods and apparatus for polishing an edge and/or notch of a substrate | |
US20220359219A1 (en) | Chemical Mechanical Polishing With Die-Based Modification |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: APPLIED MATERIALS, INC.,CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KO, SEN-HOU;ZHANG, ZHENHUA;CHEN, YUFEI;AND OTHERS;SIGNING DATES FROM 20080312 TO 20080321;REEL/FRAME:020818/0491 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO PAY ISSUE FEE |