US20070270087A1 - Polishing device and method - Google Patents
Polishing device and method Download PDFInfo
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- US20070270087A1 US20070270087A1 US11/750,038 US75003807A US2007270087A1 US 20070270087 A1 US20070270087 A1 US 20070270087A1 US 75003807 A US75003807 A US 75003807A US 2007270087 A1 US2007270087 A1 US 2007270087A1
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- Prior art keywords
- polishing
- polishing pad
- pads
- pad
- wafer
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- 238000005498 polishing Methods 0.000 title claims abstract description 361
- 238000000034 method Methods 0.000 title claims description 33
- 230000002093 peripheral effect Effects 0.000 claims abstract description 10
- 239000002002 slurry Substances 0.000 claims description 38
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 abstract description 42
- 238000003825 pressing Methods 0.000 abstract description 12
- 230000004048 modification Effects 0.000 description 21
- 238000012986 modification Methods 0.000 description 21
- 239000010408 film Substances 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920001084 poly(chloroprene) Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
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- 230000009467 reduction Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/006—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the speed
Definitions
- the present invention relates to polishing device and method.
- the present invention relates to an improvement of the polishing device and method generally used for polishing a wafer.
- the CMP process is generally effective for eliminating the step difference on the surface of the semiconductor wafer; however, causes a relatively poor within wafer uniformity in a larger wafer area after the polishing.
- semiconductor devices are fabricated on a larger-diameter wafer having a diameter of 300 mm, for example. This necessitates a further improvement of the within wafer uniformity of the polished film.
- the polishing device using the CMP process is described, for example, in Patent Publications JP2003-521117A and JP-2001-25962A.
- FIGS. 5 and 6 show a sectional view and a top plan view, respectively, of a typical conventional polishing device.
- the polishing device generally designated at numeral 100 , basically includes a polishing head 11 , a polishing pad 15 , a dresser 18 , and a slurry supply nozzle 17 .
- the polishing head 11 holds a semiconductor wafer 12 while pressing the semiconductor wafer 12 on the rear surface thereof.
- the polishing pad 15 polishes the main surface of the semiconductor wafer 12 .
- the dresser 18 carries out a dressing treatment of the front surface of the polishing pad 15 .
- the slurry supply nozzle 17 supplies slurry including an abrasive between the polishing pad 15 and the semiconductor wafer 12 .
- the polishing head 11 presses the semiconductor wafer 12 at the rear surface thereof by using a membrane sheet 14 while retaining the semiconductor wafer 12 in the in-plane direction of the wafer by using a retainer ring 13 , whereby rotation of the polishing head 11 rotates the semiconductor wafer 12 .
- the polishing pad 15 polishes the main surface of the semiconductor wafer 12 while, for example, rotating in the same direction as the semiconductor wafer 12 .
- slurry including an abrasive is supplied between the polishing pad 15 and the main surface of the semiconductor wafer 12 from the slurry supply nozzle 17 .
- the polishing pad 15 is driven for the rotational movement thereof during polishing the wafer, as described above.
- the center of the polishing pad 15 remains stationary to have a polishing rate of zero.
- the polishing of the semiconductor wafer 12 is performed radially outside the center of the polishing pad 15 . Therefore, the diameter of the polishing pad 15 is twice as large as or larger than the diameter of the polishing head 11 which has almost the same diameter as the semiconductor wafer 12 . That is, the effective processing area of the polishing pad 15 used for polishing the semiconductor wafer 12 is equal to or less than 25% of the total area of the polishing pad 15 .
- the smaller ratio of the effective polishing area to the total area of the polishing pad inevitably increases the actual size of the polishing pad, thereby increasing the cost for the CMP process.
- the dresser is used in order to achieve a stable within wafer uniformity of the polishing rate in the CMP process.
- the larger size of the polishing pad involves a difficulty in achieving the stable dressing treatment and increases the number of times of the dressing treatment. The larger number of times of the dressing treatment reduces the lifetime of the dresser to further increase the cost for the CMP process.
- the polishing pad and the slurry are generally selected depending on the target thin film to be polished. Each time such selection is made, the wafer is transferred to another polishing device which is suited or dedicated to the material of the thin film to be polished. Due to the time length required for such transfer of the wafer, the throughput of the fabrication process of the semiconductor device is lowered. Further, the within wafer uniformity of the film thickness after polishing by the CMP is particularly lower in the vicinity of the periphery of the wafer. Therefore, only an adjustment of the load by using the periphery pressing member in the polishing head is insufficient for achieving the required within wafer uniformity.
- the present invention provides a polishing device including: a polishing head that holds a wafer while allowing rotation thereof; and first and second polishing pads juxtaposed with each other in contact with a surface of the wafer held by the polishing head.
- the present invention also provides method for polishing a wafer by using the above polishing device, the method including a first step including concurrent steps of rotating the first polishing pad, supplying slurry onto a surface of the first polishing pad, stopping rotation of the second polishing pad and supplying water onto a surface of the second polishing head.
- the present invention further provides a method for polishing a wafer by using the polishing device according to claim 1 , the method including a first step including concurrent steps of rotating the first and second polishing pads, and supplying slurry onto a surface of the first and second polishing pads.
- FIG. 1 is a sectional view of a polishing device according to an exemplary embodiment of the present invention
- FIG. 2 is a top plan view of the polishing device of FIG. 1 ;
- FIG. 3 is a sectional view showing the state of polishing the wafer at the periphery thereof by using the polishing pad having a small diameter;
- FIG. 4 is a top plan view of a polishing device according to a first modification of the above embodiment
- FIG. 5 is a sectional view of a conventional polishing device
- FIG. 6 is a top plan view of the conventional polishing device.
- FIG. 7 is a sectional view of an alignment mark before a polishing treatment.
- FIG. 8 is a sectional view of the alignment mark after the polishing treatment using the polishing device of the embodiment.
- FIG. 9 is a sectional view of the alignment mark after the polishing treatment using the polishing device according to modifications of the above embodiment.
- FIG. 1 is a sectional view of a polishing device (CMP device) according to an embodiment of the present invention, particularly showing the polishing head and the vicinity thereof in the polishing device.
- FIG. 2 is a top plan view of the CMP device of FIG. 1 .
- the polishing device As shown in FIGS. 1 and 2 , the polishing device, generally designated at numeral 10 , according to the present invention includes the polishing head 11 , a pair of main polishing pads 15 and 19 , a subordinate polishing pad 22 , dressers 18 and 21 , slurry supply nozzles 17 and 20 , and a polishing pad control unit 23 .
- the polishing head 11 holds thereon a target semiconductor wafer 12 to be polished.
- the pair of main polishing pads 15 and 19 are made of polyurethane and have a diameter substantially same as the diameter of the polishing head 11 .
- the polishing pad control unit 23 controls the rotational speed, rotational direction and pressing force of the polishing pads 15 , 19 and 22 .
- the material of the polishing pad 15 may be different from the material of the polishing pad 19 if it is desired to polish different films made of different materials.
- the subordinate polishing pad 22 has a smaller diameter than the polishing head 11 and is used for polishing the peripheral portion of the wafer.
- the dresser 18 and 21 and the slurry supply nozzles 17 and 20 are attached to the respective polishing pads 15 and 19 .
- the subordinate polishing pad 22 having the smaller diameter and used for polishing the peripheral portion of the wafer 12 have corresponding slurry supply nozzle and dresser, which are omitted for illustration for the purpose of simplification of the drawings.
- the dresser and the slurry supply nozzle attached to the subordinate polishing pad 22 have a configuration and a function similar to those of the dressers and slurry supply nozzles attached to the pair of main polishing pads 15 and 19 .
- the polishing head 11 rotates, for example, in a clockwise direction, whereas the polishing pads 15 , 19 , and 22 rotate in a counterclockwise direction, as depicted in these drawings.
- the polishing head 11 includes, in addition to a head body including a rotational mechanism, a retainer ring 13 made of polyphenylene sulfide (generally abbreviated as PPS) or polyether-ether-ketone (generally abbreviated as PEEK), a membrane sheet 14 made of neoprene rubber, and a periphery pressing member 16 made of a high-polymer material.
- PPS polyphenylene sulfide
- PEEK polyether-ether-ketone
- Both the pair of main polishing pads 15 and 19 are configured to have a disk shape, and the top surface thereof is supplied with slurry, which includes an abrasive or is pure water, and is discharged from the slurry supply nozzles 17 and 20 .
- the dressers 18 and 21 have abrasive diamond grains fixed onto the front surface thereof and grind the front surface of the main polishing pads 15 and 19 , respectively, each time required to remove irregularity on the front surface of the main polishing pads 15 and 19 .
- the slurry is discharged at a flow rate of, for example, 300 ml./min. (milliliter per minute)
- the polishing pads 15 and 19 rotate, for example, at a rotational speed of 30 min ⁇ 1 , to supply the discharged slurry to the entire surface of the main polishing pads 15 and 19 .
- the semiconductor wafer 12 is set on the polishing head 11 in a face-down state.
- the polishing head 11 rotates at a rotational speed of 29 min ⁇ 1 integrally with the semiconductor wafer 12 .
- the polishing head 11 moves in a horizontal direction within the radial range of the main polishing pads 15 and 19 .
- both the polishing pads 15 and 19 have substantially the same size as the polishing head 11 , and juxtaposed with each other, substantially without a gap interposed therebetween. Due to such a configuration, the polishing pads 15 and 19 support and retain the semiconductor wafer 12 while each receiving half of the pressing force applied from the semiconductor wafer 12 . The moving distance of the polishing head 11 is restricted such that the periphery of the semiconductor wafer 12 does not reach the center of the polishing pad 15 or 19 . Polishing treatment of the semiconductor wafer 12 is carried out by both the polishing pads 15 and 19 . In the present embodiment, the configuration and function of the polishing pad 15 are similar to those of the polishing pad 19 .
- the semiconductor wafer 12 is polished by the polishing pad 15 or 19 for a predetermined time length selected in advance. Thereafter, the semiconductor wafer 12 is washed with pure water. The next semiconductor wafer 12 is polished similarly. If the slurry is discharged onto the polishing pad 19 which is not rotated, while the semiconductor wafer 12 is being polished by the polishing pad 15 , polishing is carried out also by the polishing pad 19 . In order to stop polishing by the polishing pad 19 , supply of the slurry onto the polishing pad 19 is stopped. In this case, pure water is discharged onto the polishing pad 19 from the slurry supply nozzle 20 . This prevents drying of the polishing pad 19 which is stopped for rotation, and suppresses occurring of a scratch on the surface of the semiconductor wafer 12 .
- polishing pad 15 rotates and the slurry is supplied onto the polishing pad 15
- the polishing pad 19 is stopped and pure water is supplied onto the polishing pad 19 .
- the semiconductor wafer 12 is polished by the polishing pad 15 while being supported or held by both the polishing pads 15 and 19 .
- polishing is carried out by using the polishing pad 19 , similar rotation control and slurry supply control are carried out.
- the polishing rate is generally in proportion to the F 2 pressure with which the semiconductor wafer 12 is pressed against the polishing pad 15 or 19 .
- high-pressure air having F 3 pressure is supplied to the periphery pressing member 16 shown in FIG. 1 , and is adjusted in a range of around 50 + 5 N for the pressing force by the periphery pressing member 16 .
- the subordinate polishing pad 22 having a smaller diameter is mounted between the polishing pad 15 and the polishing pad 19 , for performing the polishing treatment of the peripheral portion of the wafer 12 .
- FIG. 3 is a sectional view showing a state of polishing by the subordinate polishing pad 22 .
- the subordinate polishing pad 22 ensures this polishing area, and also adjusts the polishing rate for the peripheral portion of the wafer by optimizing the rotational speed.
- the subordinate polishing pad 22 may be activated for the polishing in synchrony with the polishing pads 15 and 19 .
- the polishing pad control unit 23 shown in FIG. 1 detects the rotational speed of the polishing pads 15 and 19 , and based on the detected rotational speed, the rotational speed of the subordinate polishing pad 22 is controlled.
- the polishing treatment is conducted in the state where the semiconductor wafer 12 is held by both the pair of main polishing pads 15 and 19 due to the above configuration.
- the polishing pad having a diameter two times as long as the diameter of the polishing head is used.
- the pair of main polishing pads 15 and 19 have the diameter same as or similar to the diameter of the polishing head 11 . Therefore, the unit cost of the polishing pads is reduced and the total cost necessary for the polishing treatment may be reduced. Further, by arranging the subordinate polishing pad 22 dedicated for polishing the peripheral portion of the wafer, the within wafer uniformity is improved from ⁇ 10% that is achieved in the conventional polishing device down to ⁇ 5%.
- polishing pad 15 has a diameter similar to the diameter of the polishing head 11 .
- Another polishing pad 24 has a smaller diameter and is dedicated for use in supporting the wafer 12 .
- the another polishing pad 24 may have a diameter slightly larger than the radius of the polishing head 11 , and the slurry supply nozzle 20 for supplying pure water is arranged on the front surface of the another polishing pad 24 dedicated for use in supporting the wafer 12 .
- the dresser is not provided to the another polishing pad 24 .
- the another polishing pad 24 may be additionally used as the subordinate polishing pad for polishing the peripheral portion of the wafer 12 .
- both the polishing pads 15 and 19 are rotated in the same rotational direction.
- the polishing pads 15 and 19 may be rotated in the opposite directions.
- the polishing pad 15 is rotated in a clockwise direction whereas the polishing pad 19 is rotated in a counterclockwise direction, differently from the configuration shown in FIG. 2 .
- the opposite rotational directions of the polishing pads 15 and 19 may improve the structure of an alignment mark such as used in a photolithographic process, as will be described hereinafter with reference to FIGS. 7 and 8 .
- FIG. 7 shows the alignment mark in section before the polishing treatment
- FIG. 8 shows the alignment mark after the polishing treatment
- a portion of the wafer in which the alignment mark 34 is to be formed includes an oxide film 31 having therein a depression 32 , and a tungsten film 33 covering the oxide film 31 including the internal of the depression 32 .
- the polishing treatment removes a portion of the tungsten film 33 on top of the oxide film 33 to leave the structure of the alignment mark 34 as shown in FIG. 8 .
- the resultant alignment mark 34 may have a slope 35 on one of the opposing edges of the alignment mark 34 , as shown in FIG. 8 , the slope 35 falling toward the inner surface of the tungsten film 31 .
- This slope 35 is formed by over-polishing of the polishing pad, and is generally involved with the polishing pad rotating in one direction.
- the slope 35 formed on one of the opposing edges of the alignment mark 34 may degrade the alignment accuracy in the photolithographic process, due to the loss of symmetry of the alignment mark 34 .
- the polishing pads 15 and 19 rotating in the opposite directions provide a slope 35 on both the opposing edges of the alignment mark 34 , as shown in FIG. 9 . This maintains the symmetry for the alignment mark 35 , thereby improving the alignment accuracy during the photolithographic process.
- the moving speed of the polishing pad 19 with respect to the wafer surface is smaller than the moving speed of the polishing pad 15 with respect to the wafer surface. This causes different polishing rates in the polishing pads 15 and 19 .
- the polishing pad control unit 23 controls the rotational speed of the polishing pad 19 so that the polishing rate by the polishing pad 19 is equal to the polishing rate by the polishing pad 15 .
- the control by the polishing pad control unit 23 assures an excellent symmetry in the alignment mark 34 , whereby the alignment accuracy is assured in the photolithographic process.
- the polishing pad control unit 23 may control, in addition to the rotational speed of the polishing pad 19 , the rotational direction, rotational speed and pressure of the dresser 21 dressing the polishing pad 19 based on the rotational speed and pressure of the polishing head 11 , which are detected by the polishing pad control unit 23 .
- the control of the rotational direction of the dresser 21 based on the dressing direction of the polishing pad 19 by the dresser 21 together with the control of the rotational speed and the pressure of the dresser 21 removes the clogging of the groove on the polishing pad 19 , thereby effectively enhancing the polishing rate by the polishing pad 19 .
- the polishing pad control unit 23 may control the operation of the polishing pad 15 and the dresser 18 instead of the operation of the polishing pad 19 and the dresser 21 , or may control the operation of both the polishing pads 15 and 19 and the dressers 18 and 21 .
- a third modification of the above embodiment is also an example such that the polishing pads 15 and 19 rotate in opposite directions.
- the first step of the polishing treatment in the third modification includes concurrent steps of rotating the polishing pad 15 in a clockwise direction, supplying slurry onto the polishing pad 15 , stopping rotation of the polishing pad 19 , and supplying pure water onto the polishing pad 19 .
- the second step includes concurrent steps of stopping rotation of the polishing pad 15 , supplying pure water onto the polishing pad 15 , rotating the polishing pad 19 in a counterclockwise direction, and supplying slurry onto the polishing pad 19 .
- the term “concurrent steps” as used herein means that those steps overlap each other in at least some interval.
- the polishing pad control unit 23 controls the rotational speed of the polishing pad 19 , similarly to the second modification, and also controls the rotational direction, rotational speed and pressure of the dresser 21 .
- the opposite rotational directions of the polishing pads 15 and 19 , the control of the rotational speed of the polishing pad 19 and the control of the rotational direction, rotational speed and pressure of the dresser 21 provide an excellent symmetry for the alignment mark 35 as shown in FIG. 9 , similarly to the case of the second modification.
- the polishing head 11 is rotated in one direction during the entire polishing treatment.
- the rotational direction of the polishing head 11 may be reversed during the polishing treatment.
- a first step uses the step described for the second modification, and a subsequent second step uses a counterclockwise rotation of the polishing head 11 together with a step similar to the first step.
- first through fourth steps uses the steps described in the third modification with or without a modification. More specifically, the first step includes concurrent steps of rotating the polishing head in a clockwise direction, rotating the polishing pad 15 in a clockwise direction, supplying slurry onto the polishing pad 15 , stopping rotation of the polishing pad 19 , and supplying pure water onto the polishing pad 19 .
- the second step includes concurrent steps of rotating the polishing head in a clockwise direction, stopping rotation of the polishing pad 15 , supplying pure water onto the polishing pad 15 , rotating the polishing pad 19 in a counterclockwise direction, and supplying slurry onto the polishing pad 19 .
- the third step includes concurrent steps of rotating the polishing head in a counterclockwise direction, stopping rotation of the polishing pad 15 , supplying pure water onto the polishing pad 15 , rotating the polishing pad 19 in a counterclockwise direction, and supplying slurry onto the polishing pad 19 .
- the fourth step includes concurrent steps of rotating the polishing head in a counterclockwise direction, rotating the polishing pad 15 in a clockwise direction, supplying slurry onto the polishing pad 15 , stopping rotation of the polishing pad 19 , and supplying pure water onto the polishing pad 19 .
- the slope 35 of the alignment mark 34 is formed by the movement of the polishing surface of the polishing pads 15 and 19 with respect to the wafer surface. More specifically, the shape of the slope 35 depends on the rotational direction of the polishing head 11 , in addition to the rotational direction of the polishing pads 15 and 19 . In view of this fact, in a fifth modification, the effect on the wafer surface caused by the movement of the polishing surface of the polishing pads 15 and 19 in one direction is cancelled by the effect on the wafer surface caused by the movement of the polishing surface in the opposite direction. This provides a uniform polishing rate on the opposite edges of the alignment mark 34 , to further improve the symmetry of the alignment mark 34 .
- the unit cost for the polishing pads is reduced, whereby the total cost for the polishing treatment may be reduced, substantially without a reduction in the polishing rate.
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
A polishing device includes a polishing head for pressing and holding a semiconductor wafer, a pair of polishing pads having the same diameter as the polishing head for polishing the semiconductor wafer, and a subordinate polishing pad having a smaller diameter for polishing a peripheral portion of the semiconductor wafer. Both the pair of polishing pads are rotated in one direction, or in opposite directions. The rotational speed of the first and/or second polishing pad is controlled so that an equal polishing rate is obtained for the first and second polishing pads when the polishing pads are rotated in opposite directions.
Description
- 1. Field of the Invention
- The present invention relates to polishing device and method. In particular, the present invention relates to an improvement of the polishing device and method generally used for polishing a wafer.
- 2. Description of the Related Art
- Along with development of a finer design rule in the semiconductor fabrication process, a higher degree of flatness is requested for the surface of a semiconductor wafer in each step of the process for manufacturing semiconductor devices.
- For achieving a flat surface of the film on the wafer, attempts have been made to satisfy the requested degree of flatness by improving the flatness of the surface of the as-deposited film itself, and by using a reflow technique such as annealing coated films including a SOG (spin on glass) film and a BPSG (borophospho-silicate glass) film at a high temperature. The CMP technique, which directly polishes the surface of the semiconductor wafer, has been increasingly used since the design rule for the semiconductor device was settled at as low as 0.35 micrometers or smaller.
- The CMP process is generally effective for eliminating the step difference on the surface of the semiconductor wafer; however, causes a relatively poor within wafer uniformity in a larger wafer area after the polishing. In recent years, semiconductor devices are fabricated on a larger-diameter wafer having a diameter of 300 mm, for example. This necessitates a further improvement of the within wafer uniformity of the polished film. The polishing device using the CMP process is described, for example, in Patent Publications JP2003-521117A and JP-2001-25962A.
- The conventional polishing device will be described with reference to the accompanying drawings.
FIGS. 5 and 6 show a sectional view and a top plan view, respectively, of a typical conventional polishing device. The polishing device, generally designated atnumeral 100, basically includes apolishing head 11, apolishing pad 15, adresser 18, and aslurry supply nozzle 17. The polishinghead 11 holds asemiconductor wafer 12 while pressing thesemiconductor wafer 12 on the rear surface thereof. Thepolishing pad 15 polishes the main surface of the semiconductor wafer 12. Thedresser 18 carries out a dressing treatment of the front surface of thepolishing pad 15. Theslurry supply nozzle 17 supplies slurry including an abrasive between thepolishing pad 15 and thesemiconductor wafer 12. - The
polishing head 11 presses thesemiconductor wafer 12 at the rear surface thereof by using amembrane sheet 14 while retaining thesemiconductor wafer 12 in the in-plane direction of the wafer by using aretainer ring 13, whereby rotation of thepolishing head 11 rotates thesemiconductor wafer 12. Thepolishing pad 15 polishes the main surface of the semiconductor wafer 12 while, for example, rotating in the same direction as the semiconductor wafer 12. During this polishing treatment, slurry including an abrasive is supplied between thepolishing pad 15 and the main surface of the semiconductor wafer 12 from theslurry supply nozzle 17. The slurry spreads uniformly on the front surface of thepolishing pad 15 by rotation of thepolishing pad 15, whereby the polishing of wafer is performed under the continuous supply of the slurry. If a groove formed on thepolishing pad 15 is clogged during the polishing of the wafer, thedresser 18 is activated to perform the dressing treatment on the surface of thepolishing pad 15. Aperiphery pressing member 16 presses the peripheral portion of thewafer 12 to achieve a desired within wafer uniformity, which is likely to be lost particularly in the vicinity of the periphery of the wafer. - The
polishing pad 15 is driven for the rotational movement thereof during polishing the wafer, as described above. During the polishing treatment, the center of thepolishing pad 15 remains stationary to have a polishing rate of zero. For this reason, the polishing of thesemiconductor wafer 12 is performed radially outside the center of thepolishing pad 15. Therefore, the diameter of thepolishing pad 15 is twice as large as or larger than the diameter of the polishinghead 11 which has almost the same diameter as thesemiconductor wafer 12. That is, the effective processing area of thepolishing pad 15 used for polishing thesemiconductor wafer 12 is equal to or less than 25% of the total area of thepolishing pad 15. - The smaller ratio of the effective polishing area to the total area of the polishing pad inevitably increases the actual size of the polishing pad, thereby increasing the cost for the CMP process.
- In addition, the dresser is used in order to achieve a stable within wafer uniformity of the polishing rate in the CMP process. The larger size of the polishing pad involves a difficulty in achieving the stable dressing treatment and increases the number of times of the dressing treatment. The larger number of times of the dressing treatment reduces the lifetime of the dresser to further increase the cost for the CMP process.
- Further, in the CMP process, the polishing pad and the slurry are generally selected depending on the target thin film to be polished. Each time such selection is made, the wafer is transferred to another polishing device which is suited or dedicated to the material of the thin film to be polished. Due to the time length required for such transfer of the wafer, the throughput of the fabrication process of the semiconductor device is lowered. Further, the within wafer uniformity of the film thickness after polishing by the CMP is particularly lower in the vicinity of the periphery of the wafer. Therefore, only an adjustment of the load by using the periphery pressing member in the polishing head is insufficient for achieving the required within wafer uniformity.
- In view of the problem of the conventional polishing device and polishing process as described above, it is an object of the present invention to provide a polishing device and a polishing method which are capable of reducing the cost for the CMP process.
- The present invention provides a polishing device including: a polishing head that holds a wafer while allowing rotation thereof; and first and second polishing pads juxtaposed with each other in contact with a surface of the wafer held by the polishing head.
- The present invention also provides method for polishing a wafer by using the above polishing device, the method including a first step including concurrent steps of rotating the first polishing pad, supplying slurry onto a surface of the first polishing pad, stopping rotation of the second polishing pad and supplying water onto a surface of the second polishing head.
- The present invention further provides a method for polishing a wafer by using the polishing device according to claim 1, the method including a first step including concurrent steps of rotating the first and second polishing pads, and supplying slurry onto a surface of the first and second polishing pads.
- The above and other objects, features and advantages of the present invention will be more apparent from the following description, referring to the accompanying drawings.
-
FIG. 1 is a sectional view of a polishing device according to an exemplary embodiment of the present invention; -
FIG. 2 is a top plan view of the polishing device ofFIG. 1 ; -
FIG. 3 is a sectional view showing the state of polishing the wafer at the periphery thereof by using the polishing pad having a small diameter; -
FIG. 4 is a top plan view of a polishing device according to a first modification of the above embodiment; -
FIG. 5 is a sectional view of a conventional polishing device; and -
FIG. 6 is a top plan view of the conventional polishing device. -
FIG. 7 is a sectional view of an alignment mark before a polishing treatment. -
FIG. 8 is a sectional view of the alignment mark after the polishing treatment using the polishing device of the embodiment. -
FIG. 9 is a sectional view of the alignment mark after the polishing treatment using the polishing device according to modifications of the above embodiment. - Now, exemplary embodiment of the present invention will be described with reference to accompanying drawings, wherein similar constituent elements are designated by similar reference numerals throughout the drawings.
-
FIG. 1 is a sectional view of a polishing device (CMP device) according to an embodiment of the present invention, particularly showing the polishing head and the vicinity thereof in the polishing device.FIG. 2 is a top plan view of the CMP device ofFIG. 1 . - As shown in
FIGS. 1 and 2 , the polishing device, generally designated atnumeral 10, according to the present invention includes thepolishing head 11, a pair ofmain polishing pads subordinate polishing pad 22,dressers slurry supply nozzles pad control unit 23. The polishinghead 11 holds thereon atarget semiconductor wafer 12 to be polished. The pair ofmain polishing pads polishing head 11. The polishingpad control unit 23 controls the rotational speed, rotational direction and pressing force of thepolishing pads polishing pad 15 may be different from the material of thepolishing pad 19 if it is desired to polish different films made of different materials. - The
subordinate polishing pad 22 has a smaller diameter than the polishinghead 11 and is used for polishing the peripheral portion of the wafer. Thedresser slurry supply nozzles respective polishing pads subordinate polishing pad 22 having the smaller diameter and used for polishing the peripheral portion of thewafer 12 have corresponding slurry supply nozzle and dresser, which are omitted for illustration for the purpose of simplification of the drawings. The dresser and the slurry supply nozzle attached to thesubordinate polishing pad 22 have a configuration and a function similar to those of the dressers and slurry supply nozzles attached to the pair ofmain polishing pads polishing device 10 according to the present embodiment, the polishinghead 11 rotates, for example, in a clockwise direction, whereas thepolishing pads - The polishing
head 11 includes, in addition to a head body including a rotational mechanism, aretainer ring 13 made of polyphenylene sulfide (generally abbreviated as PPS) or polyether-ether-ketone (generally abbreviated as PEEK), amembrane sheet 14 made of neoprene rubber, and aperiphery pressing member 16 made of a high-polymer material. - Both the pair of
main polishing pads slurry supply nozzles dressers main polishing pads main polishing pads slurry supply nozzles polishing pads main polishing pads - The
semiconductor wafer 12 is set on the polishinghead 11 in a face-down state. The polishinghead 11 rotates at a rotational speed of 29 min−1 integrally with thesemiconductor wafer 12. The polishinghead 11 moves in a horizontal direction within the radial range of themain polishing pads semiconductor wafer 12 is pressed against themain polishing pads head 11 with a mechanical pressing force of F1=70N (Newton). At the same time, thesemiconductor wafer 12 is applied with a pressing force of 50N against themain polishing pads membrane sheet 14 and the bottom surface of the head body. - As shown in
FIG. 2 , both thepolishing pads head 11, and juxtaposed with each other, substantially without a gap interposed therebetween. Due to such a configuration, thepolishing pads semiconductor wafer 12 while each receiving half of the pressing force applied from thesemiconductor wafer 12. The moving distance of the polishinghead 11 is restricted such that the periphery of thesemiconductor wafer 12 does not reach the center of thepolishing pad semiconductor wafer 12 is carried out by both thepolishing pads polishing pad 15 are similar to those of thepolishing pad 19. - The
semiconductor wafer 12 is polished by thepolishing pad semiconductor wafer 12 is washed with pure water. Thenext semiconductor wafer 12 is polished similarly. If the slurry is discharged onto thepolishing pad 19 which is not rotated, while thesemiconductor wafer 12 is being polished by thepolishing pad 15, polishing is carried out also by thepolishing pad 19. In order to stop polishing by thepolishing pad 19, supply of the slurry onto thepolishing pad 19 is stopped. In this case, pure water is discharged onto thepolishing pad 19 from theslurry supply nozzle 20. This prevents drying of thepolishing pad 19 which is stopped for rotation, and suppresses occurring of a scratch on the surface of thesemiconductor wafer 12. - In other words, when the
polishing pad 15 rotates and the slurry is supplied onto thepolishing pad 15, thepolishing pad 19 is stopped and pure water is supplied onto thepolishing pad 19. In this manner, thesemiconductor wafer 12 is polished by thepolishing pad 15 while being supported or held by both thepolishing pads polishing pad 19, similar rotation control and slurry supply control are carried out. - If different slurries are to be used for the
main polishing pads polishing pads wafer 12 at the same time, the slurry is supplied onto both themain polishing pads semiconductor wafer 12 is pressed against thepolishing pad periphery pressing member 16 shown inFIG. 1 , and is adjusted in a range of around 50 +5 N for the pressing force by theperiphery pressing member 16. - In the
polishing device 10 according to the present embodiment, thesubordinate polishing pad 22 having a smaller diameter is mounted between the polishingpad 15 and thepolishing pad 19, for performing the polishing treatment of the peripheral portion of thewafer 12.FIG. 3 is a sectional view showing a state of polishing by thesubordinate polishing pad 22. The diameter of thesubordinate polishing pad 22 is X1=80 mm, for example. At least X2=20 mm is ensured as for the length of the contact area between thesubordinate polishing pad 22 and thewafer 12. Thesubordinate polishing pad 22 ensures this polishing area, and also adjusts the polishing rate for the peripheral portion of the wafer by optimizing the rotational speed. - Although not shown in
FIG. 3 , for thesubordinate polishing pad 22 of the small diameter, similarly to theother polishing pads polishing pad 22, and pure water is supplied if the polishing treatment is not carried out by thepolishing pad 22. In addition, thesubordinate polishing pad 22 may be activated for the polishing in synchrony with thepolishing pads pad control unit 23 shown inFIG. 1 detects the rotational speed of thepolishing pads subordinate polishing pad 22 is controlled. - In the
polishing device 10 of the present embodiment, the polishing treatment is conducted in the state where thesemiconductor wafer 12 is held by both the pair ofmain polishing pads main polishing pads head 11. Therefore, the unit cost of the polishing pads is reduced and the total cost necessary for the polishing treatment may be reduced. Further, by arranging thesubordinate polishing pad 22 dedicated for polishing the peripheral portion of the wafer, the within wafer uniformity is improved from ±10% that is achieved in the conventional polishing device down to ±5%. - In the above embodiment, an example of the polishing device is described wherein both the polishing pads are used to polish the semiconductor wafer. However, a polishing pad dedicated for supporting the wafer may be adopted as one of the polishing pads. This example is shown in
FIG. 4 as a first modification of the above embodiment. Apolishing pad 15 has a diameter similar to the diameter of the polishinghead 11. Anotherpolishing pad 24 has a smaller diameter and is dedicated for use in supporting thewafer 12. The anotherpolishing pad 24 may have a diameter slightly larger than the radius of the polishinghead 11, and theslurry supply nozzle 20 for supplying pure water is arranged on the front surface of the anotherpolishing pad 24 dedicated for use in supporting thewafer 12. The dresser is not provided to the anotherpolishing pad 24. The anotherpolishing pad 24 may be additionally used as the subordinate polishing pad for polishing the peripheral portion of thewafer 12. - In the example of the above embodiment, both the
polishing pads polishing pads - For example, in a second modification of the above embodiment, the
polishing pad 15 is rotated in a clockwise direction whereas thepolishing pad 19 is rotated in a counterclockwise direction, differently from the configuration shown inFIG. 2 . The opposite rotational directions of thepolishing pads FIGS. 7 and 8 . -
FIG. 7 shows the alignment mark in section before the polishing treatment, whereasFIG. 8 shows the alignment mark after the polishing treatment. InFIG. 7 , a portion of the wafer in which thealignment mark 34 is to be formed includes anoxide film 31 having therein adepression 32, and atungsten film 33 covering theoxide film 31 including the internal of thedepression 32. The polishing treatment removes a portion of thetungsten film 33 on top of theoxide film 33 to leave the structure of thealignment mark 34 as shown inFIG. 8 . - If the
polishing pads resultant alignment mark 34 may have aslope 35 on one of the opposing edges of thealignment mark 34, as shown inFIG. 8 , theslope 35 falling toward the inner surface of thetungsten film 31. Thisslope 35 is formed by over-polishing of the polishing pad, and is generally involved with the polishing pad rotating in one direction. Theslope 35 formed on one of the opposing edges of thealignment mark 34 may degrade the alignment accuracy in the photolithographic process, due to the loss of symmetry of thealignment mark 34. - In the second modification, the
polishing pads slope 35 on both the opposing edges of thealignment mark 34, as shown inFIG. 9 . This maintains the symmetry for thealignment mark 35, thereby improving the alignment accuracy during the photolithographic process. - If the rotational speeds of both the polishing pads are equal in the second modification, the moving speed of the
polishing pad 19 with respect to the wafer surface is smaller than the moving speed of thepolishing pad 15 with respect to the wafer surface. This causes different polishing rates in thepolishing pads pad control unit 23 controls the rotational speed of thepolishing pad 19 so that the polishing rate by thepolishing pad 19 is equal to the polishing rate by thepolishing pad 15. The control by the polishingpad control unit 23 assures an excellent symmetry in thealignment mark 34, whereby the alignment accuracy is assured in the photolithographic process. - In an alternative, the polishing
pad control unit 23 may control, in addition to the rotational speed of thepolishing pad 19, the rotational direction, rotational speed and pressure of thedresser 21 dressing thepolishing pad 19 based on the rotational speed and pressure of the polishinghead 11, which are detected by the polishingpad control unit 23. The control of the rotational direction of thedresser 21 based on the dressing direction of thepolishing pad 19 by thedresser 21, together with the control of the rotational speed and the pressure of thedresser 21 removes the clogging of the groove on thepolishing pad 19, thereby effectively enhancing the polishing rate by thepolishing pad 19. - The polishing
pad control unit 23 may control the operation of thepolishing pad 15 and thedresser 18 instead of the operation of thepolishing pad 19 and thedresser 21, or may control the operation of both thepolishing pads dressers - A third modification of the above embodiment is also an example such that the
polishing pads FIG. 2 , the first step of the polishing treatment in the third modification includes concurrent steps of rotating thepolishing pad 15 in a clockwise direction, supplying slurry onto thepolishing pad 15, stopping rotation of thepolishing pad 19, and supplying pure water onto thepolishing pad 19. The second step includes concurrent steps of stopping rotation of thepolishing pad 15, supplying pure water onto thepolishing pad 15, rotating thepolishing pad 19 in a counterclockwise direction, and supplying slurry onto thepolishing pad 19. The term “concurrent steps” as used herein means that those steps overlap each other in at least some interval. - The polishing
pad control unit 23 controls the rotational speed of thepolishing pad 19, similarly to the second modification, and also controls the rotational direction, rotational speed and pressure of thedresser 21. In the third modification, the opposite rotational directions of thepolishing pads polishing pad 19 and the control of the rotational direction, rotational speed and pressure of thedresser 21 provide an excellent symmetry for thealignment mark 35 as shown inFIG. 9 , similarly to the case of the second modification. - In the example of the above embodiment and first through third modifications, the polishing
head 11 is rotated in one direction during the entire polishing treatment. However, the rotational direction of the polishinghead 11 may be reversed during the polishing treatment. - In a fourth modification, for example, a first step uses the step described for the second modification, and a subsequent second step uses a counterclockwise rotation of the polishing
head 11 together with a step similar to the first step. - In a fifth modification, first through fourth steps uses the steps described in the third modification with or without a modification. More specifically, the first step includes concurrent steps of rotating the polishing head in a clockwise direction, rotating the
polishing pad 15 in a clockwise direction, supplying slurry onto thepolishing pad 15, stopping rotation of thepolishing pad 19, and supplying pure water onto thepolishing pad 19. The second step includes concurrent steps of rotating the polishing head in a clockwise direction, stopping rotation of thepolishing pad 15, supplying pure water onto thepolishing pad 15, rotating thepolishing pad 19 in a counterclockwise direction, and supplying slurry onto thepolishing pad 19. The third step includes concurrent steps of rotating the polishing head in a counterclockwise direction, stopping rotation of thepolishing pad 15, supplying pure water onto thepolishing pad 15, rotating thepolishing pad 19 in a counterclockwise direction, and supplying slurry onto thepolishing pad 19. The fourth step includes concurrent steps of rotating the polishing head in a counterclockwise direction, rotating thepolishing pad 15 in a clockwise direction, supplying slurry onto thepolishing pad 15, stopping rotation of thepolishing pad 19, and supplying pure water onto thepolishing pad 19. - The
slope 35 of thealignment mark 34 is formed by the movement of the polishing surface of thepolishing pads slope 35 depends on the rotational direction of the polishinghead 11, in addition to the rotational direction of thepolishing pads polishing pads alignment mark 34, to further improve the symmetry of thealignment mark 34. - It should be noted that the order of the steps described in each of the third through fifth steps may be changed as desired.
- In the above embodiment and the modifications, since the size of the polishing pads in the embodiment is reduced compared to the conventional polishing pad, the unit cost for the polishing pads is reduced, whereby the total cost for the polishing treatment may be reduced, substantially without a reduction in the polishing rate.
- Use of one of the polishing pads for the polishing treatment while stopping rotation of the other of the polishing pads, if employed, allows the one of the polishing pads having a smaller size to polish the wafer while supporting the wafer by the other of the polishing pads.
- While the invention has been particularly shown and described with reference to exemplary embodiment and modifications thereof, the invention is not limited to these embodiment and modifications. It will be understood by those of ordinary skill in the art that various changes in form and details be made therein without departing from the spirit and scope of the present invention as defined in the claims.
Claims (15)
1. A polishing device comprising:
a polishing head that holds a wafer while allowing rotation thereof; and
first and second polishing pads juxtaposed with each other in contact with a surface of the wafer held by said polishing head.
2. The polishing device according to claim 1 , said polishing head has a diameter substantially equal to a diameter of at least one of said first and second polishing pads.
3. The polishing device according to claim 2 , wherein said at least one of said first and second polishing pads include both said first and second polishing pads.
4. The polishing device according to claim 2 , wherein said first polishing pad has the diameter substantially equal to the diameter of said polishing head, and said second polishing pad has a diameter smaller than the diameter of said polishing head.
5. The polishing device according to claim 1 , further comprising a third polishing pad juxtaposed with said first and second polishing pads in contact with the surface of the wafer held by said polishing head, wherein said third polishing pad polishes a peripheral area of the surface of the wafer.
6. The polishing device according to claim 1 , wherein said first polishing pad includes a material different from a material of said second polishing pad.
7. The polishing device according to claim 1 , further comprising a polishing pad control unit that controls a rotational speed of said first polishing pad and/or said second polishing pad so that said first and second polishing pads have an equal polishing rate if said first and second polishing pads rotate in opposite directions.
8. The polishing device according to claim 7 , further comprising first and second dressers that dress said first and second polishing pads, respectively, wherein said polishing pad control unit further controls a rotational direction, rotational speed and pressure of at least one of said first and second dressers.
9. A method for polishing a wafer by using the polishing device according to claim 1 , said method comprising a first step including concurrent steps of rotating said first polishing pad, supplying slurry onto a surface of said first polishing pad, stopping rotation of said second polishing pad and supplying water onto a surface of said second polishing head.
10. The method according to claim 9 , further comprising a second step including concurrent steps of stopping rotation of said first polishing pad, supplying water onto a surface of said first polishing pad, rotating said second polishing pad, and supplying slurry onto a surface of said second polishing pad.
11. The method according to claim 10 , wherein a rotational direction of said first polishing pad in said first step is opposite to a rotational direction of said second polishing pad in said second step.
12. The method according to claim 11 , further comprising a third step including said consecutive steps of said first step, and a fourth step including said consecutive steps of said second step, wherein a rotational direction of said polishing head is different between said first step and said third step and between said second step and said fourth step.
13. A method for polishing a wafer by using the polishing device according to claim 1 , said method comprising a first step including concurrent steps of rotating said first and second polishing pads, and supplying slurry onto a surface of said first and second polishing pads.
14. The method according to claim 13 , wherein said first and second polishing pads rotate in opposite directions.
15. The method according to claim 14 , wherein a rotational direction of said polishing head is reversed during said first step.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JP2006-137592 | 2006-05-17 | ||
JP2006137592 | 2006-05-17 | ||
JP2007116590A JP2007331093A (en) | 2006-05-17 | 2007-04-26 | Polishing device |
JP2007-116590 | 2007-04-26 |
Publications (1)
Publication Number | Publication Date |
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US20070270087A1 true US20070270087A1 (en) | 2007-11-22 |
Family
ID=38712542
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US11/750,038 Abandoned US20070270087A1 (en) | 2006-05-17 | 2007-05-17 | Polishing device and method |
Country Status (2)
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US (1) | US20070270087A1 (en) |
JP (1) | JP2007331093A (en) |
Families Citing this family (1)
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US9566687B2 (en) * | 2014-10-13 | 2017-02-14 | Sunedison Semiconductor Limited (Uen201334164H) | Center flex single side polishing head having recess and cap |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6074277A (en) * | 1998-04-16 | 2000-06-13 | Speedfam Co., Ltd. | Polishing apparatus |
US6135859A (en) * | 1999-04-30 | 2000-10-24 | Applied Materials, Inc. | Chemical mechanical polishing with a polishing sheet and a support sheet |
US6152806A (en) * | 1998-12-14 | 2000-11-28 | Applied Materials, Inc. | Concentric platens |
US6432823B1 (en) * | 1999-11-04 | 2002-08-13 | International Business Machines Corporation | Off-concentric polishing system design |
US6443815B1 (en) * | 2000-09-22 | 2002-09-03 | Lam Research Corporation | Apparatus and methods for controlling pad conditioning head tilt for chemical mechanical polishing |
-
2007
- 2007-04-26 JP JP2007116590A patent/JP2007331093A/en active Pending
- 2007-05-17 US US11/750,038 patent/US20070270087A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6074277A (en) * | 1998-04-16 | 2000-06-13 | Speedfam Co., Ltd. | Polishing apparatus |
US6152806A (en) * | 1998-12-14 | 2000-11-28 | Applied Materials, Inc. | Concentric platens |
US6135859A (en) * | 1999-04-30 | 2000-10-24 | Applied Materials, Inc. | Chemical mechanical polishing with a polishing sheet and a support sheet |
US6432823B1 (en) * | 1999-11-04 | 2002-08-13 | International Business Machines Corporation | Off-concentric polishing system design |
US6443815B1 (en) * | 2000-09-22 | 2002-09-03 | Lam Research Corporation | Apparatus and methods for controlling pad conditioning head tilt for chemical mechanical polishing |
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JP2007331093A (en) | 2007-12-27 |
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