US20070267579A1 - Photomask correction method using composite charged particle beam, and device used in the correction method - Google Patents
Photomask correction method using composite charged particle beam, and device used in the correction method Download PDFInfo
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- US20070267579A1 US20070267579A1 US11/646,723 US64672306A US2007267579A1 US 20070267579 A1 US20070267579 A1 US 20070267579A1 US 64672306 A US64672306 A US 64672306A US 2007267579 A1 US2007267579 A1 US 2007267579A1
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- defect
- gallium
- mask
- electron beam
- correction
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- 238000012937 correction Methods 0.000 title claims abstract description 48
- 239000002245 particle Substances 0.000 title claims description 18
- 239000002131 composite material Substances 0.000 title claims description 10
- 238000000034 method Methods 0.000 title abstract description 40
- 238000010894 electron beam technology Methods 0.000 claims abstract description 46
- 238000005530 etching Methods 0.000 claims abstract description 38
- 238000012545 processing Methods 0.000 claims abstract description 38
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims description 13
- 150000002500 ions Chemical group 0.000 claims description 11
- 230000001678 irradiating effect Effects 0.000 claims description 9
- 238000005507 spraying Methods 0.000 claims description 5
- 238000012544 monitoring process Methods 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 95
- 229910052733 gallium Inorganic materials 0.000 abstract description 33
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract description 32
- 230000010363 phase shift Effects 0.000 abstract description 23
- 239000011521 glass Substances 0.000 abstract description 13
- 239000000758 substrate Substances 0.000 abstract description 12
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 24
- 230000008021 deposition Effects 0.000 description 7
- 238000011109 contamination Methods 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000011800 void material Substances 0.000 description 5
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- -1 gallium ions Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 150000002258 gallium Chemical class 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- IGELFKKMDLGCJO-UHFFFAOYSA-N xenon difluoride Chemical compound F[Xe]F IGELFKKMDLGCJO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
- G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
Definitions
- the present invention relates to a mask correction method that combines correction using a focused ion beam and correction using an electron beam, and to a device realizing this.
- So-called transparent defect correction for repairing defect sections of a mask used in semiconductor manufacturing processes, and so-called opaque defect correction for removing additional sections are carried out using technology such as deposition carried out by irradiating a focused ion beam (FIB) while spraying a source material gas, and sputter etching and gas assisted etching for irradiating a focused ion beam.
- FIB focused ion beam
- this technology is established in the field of FIB mask repair.
- gallium which is a liquid metal, is generally used as the ion material for this focused ion beam, and there is a problem that the sample surface is damaged by Ga ions irradiated in the course of processing.
- FIG. 6A is a cross sectional drawing of a phase shift mask, having a shaded pattern formed on the surface of a glass substrate 23 using Cr.
- a subsequent shaded pattern 62 is formed extremely close to one shaded pattern, and an open section 44 is formed between adjacent shaded patterns.
- phase shifter film 42 a transparent film is formed in every other open section 44 , and this is called a phase shifter film 42 .
- the material of the phase shifter film 42 is a transparent material, and can be an inorganic material such as magnesium fluoride, titanium dioxide or silicon dioxide, or an organic material such as a polymer. It is also useful to use a resist material for the phase shift film 42 .
- coherent light irradiated from above passes through each open section 44 , and binds an image on the wafer either directly or via a lens optical system.
- Light passing through the phase shifter film 42 has light phase shifted by 180° compared to the light that has not passed through the phase shifter film.
- Amplitude distribution of light passing through the mask open sections is as shown in FIG. 6B .
- light that has passed through open sections 44 in the phase shifter film 42 and light that has passed through open sections 44 that are not in the phase shifter film 42 are 180° out of phase with each other.
- diffracted light also reaches the wafer corresponding to sections in the shadow of the shaded pattern 62 .
- amplitude (strength) of light reaching the wafer is as shown in FIG. 6C .
- Light diffracted at shadow sections of a particular shaded pattern 62 and rotated from left and right open sections is 180° out of phase with each other. That is, negating this, the strength distribution of light irradiated on the wafer becomes as shown in FIG. 6D .
- an image of the open section is clearly separated.
- patent document 1 Japanese Patent Laid-open No; Hei. 4-125642 shows a technique, intended to correct defects occurring in a transparent film of a photo mask used for phase shift with high precision, wherein gas for CVD is attached to a main surface of a photomask, and a correction film is then deposited onto the defect regions by selectively irradiating an energy beam to the defect regions.
- etching the defect regions by selectively irradiating the defect regions with an energy beam.
- deposition of a transparent film by selective irradiation of the energy beam on part of a transparent region of the main surface of the photomask for the purpose of forming a transparent film on the main surface of a phase shift photomask.
- a focused ion beam and an electron beam are included as examples of the energy beam.
- Patent document 2 Japanese Patent Laid-open No. Hei. 5-1143366 discloses a technique of etching defect sections of a phase shift mask until the defect sections become a substantially flat thin film, and then changing a refractive index of a phase shifter of the defect regions that have been substantially flattened by carrying out ion implantation by irradiation of an ion beam so that there is no phase difference, and also discloses a method of irradiating a heat energy beam such as an electron beam to change a refractive index by causing thermal strain, for the purpose of carrying out correction to defects of a phase shifter of a phase shifter mask simply and with high precision
- patent document 3 Japanese Patent Laid-open No. Hei. 6-42069 discloses a technique of irradiating an electron beam in a material gas atmosphere to correct missing defects by forming a shading film on the correction regions, for the purpose of enabling correction of missing defects of a photomask in a short time.
- Patent document 1 Japanese Patent Laid-open No. Hei. 4-125642, FIG. 1 , FIG. 2 , FIG. 7 and FIG. 8 .
- Patent document 2 Japanese Patent Laid-open No. Hei. 5-114336, claim 6 and paragraph [0037].
- Patent document 3 Japanese Patent Laid-open No. Hei. 6-42069, page 4 column 7, line 44—column 8, line 4.
- the object of the present invention is to provide a method for solving the problem of surface damage due to gallium ion irradiation that poses a problem when carrying out mask repair using currently established FIB techniques, and the problem of residual gallium, and to provide a device realizing this method.
- a mask repair method of the present invention first of all carries out removal so that only a thin film remains by etching using an FIB in the event that there are opaque defects, and as finishing then either executes a step of removing the thin film contaminated with gallium by gas assist etching using an electron beam, and carries out removal by only gas assisted etching using an electron beam for bump defects of a phase shift mask, or first carries out removal so that only a thin film remains by etching using an FIB and then removes the thin film contaminated with gallium using gas assisted etching with an electron beam.
- a composite charged particle beam device for mask correction of the present invention it is possible to perceive timing for changing from coarse processing using an FIB-to finishing processing using an electron beam while monitoring processing conditions, by providing a gas introduction device provided with an electron beam lens barrel capable of carrying out processing besides an FIB lens barrel in the same sample chamber, and also spraying a CVD source material gas and/or an etching assist gas to a beam irradiation position, and a secondary charged particle detector, capable of discriminatively detecting secondary ions as well as secondary electrons.
- FIG. 1 is a drawing showing the basic structure of a device for executing a mask correction method using a composite secondary charged particle beam of the present invention.
- FIG. 2 is a drawing for describing the mask correction method of the present invention, for opaque defects.
- FIG. 3 is a drawing for describing a mask correction method carried out using the device of the present invention, for transparent defects.
- FIG. 4 is drawing for describing a correction method of the present invention, for void defects and bump defects of a phase shifter film.
- FIG. 5 is a drawing for describing a correction method of the present invention, for a cut remnant defect of a glass substrate of a phase shift mask.
- FIG. 6 is a drawing for describing the principal of a phase shift photomask.
- the present invention selectively executes deposition or etching carried out using a focused ion beam or electron beam, using a device provided with a focused ion beam lens barrel and an electron beam lens barrels capable of processing in a sample chamber, and a gas gun for spraying CVD source gas or assist gas for gas assisted etching to a beam irradiation position.
- FIG. 1 shows the basic structure of this type of composite charged particle beam device.
- Reference numeral 1 is a focused ion beam lens barrel
- 2 is an electron beam lens barrel
- 3 is a sample chamber
- 4 is a sample stage
- 5 is a sample
- 6 is a vacuum pump
- 7 is a secondary charged particle detector
- 8 is a gas introduction device
- 9 is a charge neutralizer for neutralizing charge on a sample surface.
- This secondary charged particle detector 7 detects secondary electrons and secondary ions by mass separation, and it is preferable to provide a function that can identify the type of particle detected.
- the device is of a type where the optical axes of the FIB lens barrel 1 and the electron beam lens barrel 2 intersect, but it is also possible to have a device of the type where the two optical axes are set up parallel to each other.
- the electron beam lens barrel 2 used in the present invention is different to that for a scanning microscope installed in a conventional device for observation, and utilizes a large beam current (up to a few nA) so that it can also be used in processing.
- beam current used is fixed from a few pA to a few tens of pA.
- the FIB lens barrel 1 is used with beam current being fixed from a few pA to a few tens of pA.
- a mask correction method of the present invention carried out using the above device will now be described.
- an electron beam or a focused ion beam is scanned and microscope image is acquired by detecting a secondary electron image using the detector 7 .
- Defect sections are identified by image observation, and positioning for the mask correction region is carried out.
- positioning of the correction regions is carried out by acquitting an SEM image with an electron beam without using a focused ion beam.
- a defect is a mask residual defect (opaque defect) 21 such as that shown in cross section in FIG.
- etching gas is sprayed from the gas introduction device 8 to the defect region, and a focused ion beam is irradiated to the defect region. Then, as shown in FIG. 2B , irradiation of the focused ion beam is stopped with a small amount of residual material remaining, without completely removing the defect.
- This processing is gas assisted etching with liquid gallium as an ion source, which means that gallium is implanted into the remaining part of this opaque defect. Since there is part of the mask where light passes through, if the opaque defect is contaminated with gallium, then even if the opaque defect is removed there is light absorption at that part and there will be the above described problems in a lithographic process.
- etching gas (XeF 2 ) is sprayed to the remaining defect region, and as shown in FIG. 2D , this time an electron beam is irradiated to that region, and the defect section is removed completely.
- This processing is gas assisted etching using an electron beam, which means that there is no injection of gallium into the sample, and the gallium that was implanted by the previous ion beam process is removed together with the residual opaque defect. This is the opaque defect correction method of the present invention.
- This photomask opaque defect correction is good for acquiring transparency of a glass substrate section, and with respect to thickness of a glass substrate, differing from the case of a phase shifter, which will be described later, there is no requirement for stringency.
- this opaque defect correction using FIB processing the thin layer of the remaining opaque defect 24 shown in FIG. 2C will be completely removed without leaving any behind, and even with a process for removing a gallium impregnation layer injected inside the glass substrate using an electron beam, there is no particular problem. In that case, it is possible to terminate FIB processing by detecting that there is no longer any opaque defect using the ion type identification function of the secondary charged particle detector 7 , and automatically switching-to electron beam processing, which is extremely advantageous from the point of view of working capacity.
- the observed defect is a mask void defect (transparent defect), as shown in cross section in FIG. 3A
- gas is sprayed to the defect region as shown in FIG. 3B , and a focused ion beam or an electron beam is irradiated to that region.
- the defect is corrected by forming a localized film by deposition using an ion beam or an electron beam.
- a conventional mask in the case of a normal transparent defect, since there is a region where light is shielded, there is no problem due to light absorption even if liquid gallium is used in the ion source and gallium elements are implanted into the correction region. Accordingly, for transparent defects, it is possible to carry out correction using a focused ion beam.
- CVD gas Silicon type gas such as TEOS
- an electron beam EB is irradiated to that region.
- the phase shift film has a region that light passes through, in processing at this time a focused ion beam that would cause a problem of gallium contamination is not used, and instead deposition is carried out using an electron beam.
- FIG. 4C is a cross sectional drawing of a bump defect on the phase shifter film 42 of a phase shift mask.
- This bump defect is a redundant defect, basically the same as the opaque defect, and must be removed.
- etching gas is sprayed to the defect region, as shown in FIG. 4D , and an electron beam or focused ion beam is irradiated to that region to remove it by gas assisted etching.
- this phase shifter film 42 constitutes a region of a mask through which light passes, and therefore no light absorption problem arises if gallium remains. When correction is carried out by etching using an electron beam from the start, this gallium residue contamination problem does not arise.
- the glass substrate is not simply transparent, and the thickness dimension of the glass substrate influences phase of light. Therefore, in the FIB processing, a thin layer of redundant defect, such as an opaque defect, remains, and in finishing processing it is essential not to shave off the glass substrate. For example, in a pretest, secondary ion detection is carried out and the time until opaque defect material is no longer detected measured, and when carrying out actual processing, processing time corresponding to the defect is calculated from that measured time and it is possible to have a method where processing using the FIB is terminated.
- FIG. 5A shows a cross section of a cut remnant defect when forming a phase shift mask by etching glass.
- a phase shift mask that has been cut out will not perform the intended phase shift if the depth of the cut-out is not that required for the phase shift.
- a method for correcting this cut remnant defect 51 is realized in conformity with the previous cases for the opaque defect and phase shift film bump defect, since it is basically a redundant defect. That is, using the device of the present invention, etching gas is sprayed to the defect region, and an electron beam or a focused ion beam is irradiated to that region to carry out gas assisted etching, as shown in FIG. 5B , to remove the defect.
- this glass substrate 23 constitutes a region of a phase shift mask through which light passes, if gallium remains, a light absorption problem will arise. In the case where correction is carried out by etching using an electron beam from the start, this problem of gallium residue contamination will not arise. However, when a bump defect is removed by gas assisted etching using a focused ion beam because the defect is large etc., similarly to the opaque defect the bump defect is not removed completely and a thin part remains. Since gallium is implanted and injected into this thinly remaining defect section, finishing processing is carried out by irradiating an electron beam to the gallium contaminated section to be removed and performing gas assisted etching.
- the mask has the glass substrate 23 , there is a problem of electrical charge in the process of irradiating the charged particles. This charge causes influence on electrostatic force at the time of beam irradiation, and impairs the observation image, and so with the process of the present invention, the charge is cancelled as required by operation of a charge neutralizer 9 .
- the mask correction method of the present invention in a correction process for removing redundant sections such as photomask opaque defects of phase shifter bump defects, comprises the steps of coarse correction by etching using a focused ion beam, and then finishing processing using an electron beam, which means that even if correction processing using a focused ion beam is carried out, it is possible to remove surface damage due to gallium irradiation and residual gallium.
- a composite charged particle beam device of the present invention with two lens barrels, namely an electron beam lens barrel capable of carrying out processing and an FIB lens barrel in the sample chamber, as well as providing a gas introduction device for spraying a CVD source material gas and/or an etching assist gas to a beam irradiation position, there is the advantage that it is possible to selectively perform etching or deposition carried out using a focused ion beam or an electron beam.
- a mask correction method comprising a step of acquiring an SEM image with an electron beam and a step of positioning defect correction locations on the SEM image, there is no problem of damage and contamination of the sample surface due to a focused ion beam as there would be when using a scanning image using a focused ion beam.
- the mask correction composite charged particle beam device of the present invention can monitor processing state, due to the fact that it is provided with a secondary charged particle detector capable of discriminatively detecting secondary electrons and secondary ions. Accordingly, it is possible to terminate FIB processing by detecting that there is no longer any opaque defect, and automatically switch to electron beam processing, which is extremely advantageous with respect to working capacity
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Abstract
The object of the present invention is to provide a method for solving the problem of surface damage due to gallium ion irradiation that poses a problem when carrying out mask repair using currently established FIB techniques, and the problem of residual gallium, and to provide a device realizing this method. The device of the present invention has an electron beam lens barrel that can carry out processing, as well as an FIB lens barrel, provided inside the same sample chamber, which means that a mask repair method of the present invention, in correction processing to remove redundant sections such as a mask opaque defect, phase shift film bump defect or a glass substrate cut remnant defect, comprises a step of coarse correction by etching using a focused ion beam and a step of finishing processing using an electron beam, to remove surface damage due to gallium irradiation, and residual gallium.
Description
- 1. Technical Field
- The present invention relates to a mask correction method that combines correction using a focused ion beam and correction using an electron beam, and to a device realizing this.
- 2. Related Art
- So-called transparent defect correction for repairing defect sections of a mask used in semiconductor manufacturing processes, and so-called opaque defect correction for removing additional sections are carried out using technology such as deposition carried out by irradiating a focused ion beam (FIB) while spraying a source material gas, and sputter etching and gas assisted etching for irradiating a focused ion beam. Currently, this technology is established in the field of FIB mask repair. However, gallium, which is a liquid metal, is generally used as the ion material for this focused ion beam, and there is a problem that the sample surface is damaged by Ga ions irradiated in the course of processing. Accordingly, since at a coarse processing stage processing is carried out at a high acceleration voltage, a procedure is necessary to carefully perform finishing processing of a sample surface that has been subjected to damaged because of this high acceleration voltage with a low acceleration voltage at the finishing processing stage, and polish the damaged sample surface. Although it is possible to repair the roughened sample surface using this procedure, since gallium is used as the ion material, the gallium is injected into a mask, which is the sample, and this injected gallium remains in the finished mask. When this mask is used in lithography, the remaining gallium absorbs light and adversely affects transparency, and causes an imbalance in intensity of light irradiated to resist. Because the latest semiconductor patterns are becoming extremely detailed, it is necessary to use light of short wavelength as a light source in order to obtain a clear-transfer image. The problem of this light absorption is therefore particularly serious when using light at a wavelength of 157 nm.
- Recently, photolithography using phase shift masks in order to increase mask resolution has been widely used in the manufacture of semiconductor circuits. This lithography is-intended to improve mask resolution using phase difference of light as well as light amplitude distribution. One example of a photolithography method (phase shift method) using a phase shift mask is shown in
FIG. 6 a,FIG. 6B ,FIG. 6C andFIG. 6D .FIG. 6A is a cross sectional drawing of a phase shift mask, having a shaded pattern formed on the surface of aglass substrate 23 using Cr. A subsequent shadedpattern 62 is formed extremely close to one shaded pattern, and anopen section 44 is formed between adjacent shaded patterns. These are repeatedly formed in the same manner. Also, a transparent film is formed in every otheropen section 44, and this is called aphase shifter film 42. The material of thephase shifter film 42 is a transparent material, and can be an inorganic material such as magnesium fluoride, titanium dioxide or silicon dioxide, or an organic material such as a polymer. It is also useful to use a resist material for thephase shift film 42. - In
FIG. 6A , coherent light irradiated from above passes through eachopen section 44, and binds an image on the wafer either directly or via a lens optical system. Light passing through thephase shifter film 42 has light phase shifted by 180° compared to the light that has not passed through the phase shifter film. Amplitude distribution of light passing through the mask open sections is as shown inFIG. 6B . Specifically, light that has passed throughopen sections 44 in thephase shifter film 42 and light that has passed throughopen sections 44 that are not in thephase shifter film 42 are 180° out of phase with each other. Also, since light that has passed through theopen sections 44 is diffracted, diffracted light also reaches the wafer corresponding to sections in the shadow of theshaded pattern 62. Therefore, amplitude (strength) of light reaching the wafer is as shown inFIG. 6C . Light diffracted at shadow sections of a particular shadedpattern 62 and rotated from left and right open sections is 180° out of phase with each other. That is, negating this, the strength distribution of light irradiated on the wafer becomes as shown inFIG. 6D . Specifically, an image of the open section is clearly separated. Also, besides the phase shifter film, there is also a method of forming a groove 45 v in the glass substrate and causing phase shift, as shown inFIG. 6E . - With respect to the mask correction method, not only techniques such as CVD and etching using an FIB, but also CVD and gas assisted etching using an electron beam as an energy beam are disclosed in previous patents. For example, patent document 1 (Japanese Patent Laid-open No; Hei. 4-125642) shows a technique, intended to correct defects occurring in a transparent film of a photo mask used for phase shift with high precision, wherein gas for CVD is attached to a main surface of a photomask, and a correction film is then deposited onto the defect regions by selectively irradiating an energy beam to the defect regions. Also disclosed is, after causing etching gas to be attached to the main surface of the photomask, etching the defect regions by selectively irradiating the defect regions with an energy beam. Further, there is disclosed deposition of a transparent film by selective irradiation of the energy beam on part of a transparent region of the main surface of the photomask, for the purpose of forming a transparent film on the main surface of a phase shift photomask. Here, a focused ion beam and an electron beam are included as examples of the energy beam.
- Patent document 2 (Japanese Patent Laid-open No. Hei. 5-114336) discloses a technique of etching defect sections of a phase shift mask until the defect sections become a substantially flat thin film, and then changing a refractive index of a phase shifter of the defect regions that have been substantially flattened by carrying out ion implantation by irradiation of an ion beam so that there is no phase difference, and also discloses a method of irradiating a heat energy beam such as an electron beam to change a refractive index by causing thermal strain, for the purpose of carrying out correction to defects of a phase shifter of a phase shifter mask simply and with high precision
- Also, patent document 3 (Japanese Patent Laid-open No. Hei. 6-42069) discloses a technique of irradiating an electron beam in a material gas atmosphere to correct missing defects by forming a shading film on the correction regions, for the purpose of enabling correction of missing defects of a photomask in a short time.
- However, even though a technique for changing refractive index by gas assisted etching or CVD using an electron beam, or by causing thermal strain, are disclosed in the above patent documents, there is neither direct disclosure of damage caused by gallium ions of an FIB, the effect of gallium ions remaining in a mask, and removing the effect by separately using an ion beam and an electron beam taking into consideration differences in their characteristics, and the technical concept of providing a mask repair device in mask correction provided with two lens barrels to compensate for the drawbacks by using two separate beams, nor any suggestion of any recognition of these problems.
- Patent document 1: Japanese Patent Laid-open No. Hei. 4-125642,
FIG. 1 ,FIG. 2 ,FIG. 7 andFIG. 8 . - Patent document 2: Japanese Patent Laid-open No. Hei. 5-114336,
claim 6 and paragraph [0037]. - Patent document 3: Japanese Patent Laid-open No. Hei. 6-42069,
page 4column 7,line 44—column 8,line 4. - The object of the present invention is to provide a method for solving the problem of surface damage due to gallium ion irradiation that poses a problem when carrying out mask repair using currently established FIB techniques, and the problem of residual gallium, and to provide a device realizing this method.
- A mask repair method of the present invention first of all carries out removal so that only a thin film remains by etching using an FIB in the event that there are opaque defects, and as finishing then either executes a step of removing the thin film contaminated with gallium by gas assist etching using an electron beam, and carries out removal by only gas assisted etching using an electron beam for bump defects of a phase shift mask, or first carries out removal so that only a thin film remains by etching using an FIB and then removes the thin film contaminated with gallium using gas assisted etching with an electron beam.
- As a composite charged particle beam device for mask correction of the present invention, it is possible to perceive timing for changing from coarse processing using an FIB-to finishing processing using an electron beam while monitoring processing conditions, by providing a gas introduction device provided with an electron beam lens barrel capable of carrying out processing besides an FIB lens barrel in the same sample chamber, and also spraying a CVD source material gas and/or an etching assist gas to a beam irradiation position, and a secondary charged particle detector, capable of discriminatively detecting secondary ions as well as secondary electrons.
-
FIG. 1 is a drawing showing the basic structure of a device for executing a mask correction method using a composite secondary charged particle beam of the present invention. -
FIG. 2 is a drawing for describing the mask correction method of the present invention, for opaque defects. -
FIG. 3 is a drawing for describing a mask correction method carried out using the device of the present invention, for transparent defects. -
FIG. 4 is drawing for describing a correction method of the present invention, for void defects and bump defects of a phase shifter film. -
FIG. 5 is a drawing for describing a correction method of the present invention, for a cut remnant defect of a glass substrate of a phase shift mask. -
FIG. 6 is a drawing for describing the principal of a phase shift photomask. - The present invention selectively executes deposition or etching carried out using a focused ion beam or electron beam, using a device provided with a focused ion beam lens barrel and an electron beam lens barrels capable of processing in a sample chamber, and a gas gun for spraying CVD source gas or assist gas for gas assisted etching to a beam irradiation position.
FIG. 1 shows the basic structure of this type of composite charged particle beam device.Reference numeral 1 is a focused ion beam lens barrel, 2 is an electron beam lens barrel, 3 is a sample chamber, 4 is a sample stage, 5 is a sample, 6 is a vacuum pump, 7 is a secondary charged particle detector, 8 is a gas introduction device, and 9 is a charge neutralizer for neutralizing charge on a sample surface. This secondary chargedparticle detector 7 detects secondary electrons and secondary ions by mass separation, and it is preferable to provide a function that can identify the type of particle detected. InFIG. 1 , the device is of a type where the optical axes of theFIB lens barrel 1 and the electronbeam lens barrel 2 intersect, but it is also possible to have a device of the type where the two optical axes are set up parallel to each other. However, the electronbeam lens barrel 2 used in the present invention is different to that for a scanning microscope installed in a conventional device for observation, and utilizes a large beam current (up to a few nA) so that it can also be used in processing. Incidentally, if it is for observation, beam current used is fixed from a few pA to a few tens of pA. Also, theFIB lens barrel 1 is used with beam current being fixed from a few pA to a few tens of pA. - A mask correction method of the present invention carried out using the above device will now be described. First of all, in order to carry out observation of a correction region, an electron beam or a focused ion beam is scanned and microscope image is acquired by detecting a secondary electron image using the
detector 7. Defect sections are identified by image observation, and positioning for the mask correction region is carried out. In particular, when it is desired to reduce damage due to imaging, positioning of the correction regions is carried out by acquitting an SEM image with an electron beam without using a focused ion beam. When a defect is a mask residual defect (opaque defect) 21 such as that shown in cross section inFIG. 2A , in order to remove theopaque defect 21, etching gas is sprayed from thegas introduction device 8 to the defect region, and a focused ion beam is irradiated to the defect region. Then, as shown inFIG. 2B , irradiation of the focused ion beam is stopped with a small amount of residual material remaining, without completely removing the defect. This processing is gas assisted etching with liquid gallium as an ion source, which means that gallium is implanted into the remaining part of this opaque defect. Since there is part of the mask where light passes through, if the opaque defect is contaminated with gallium, then even if the opaque defect is removed there is light absorption at that part and there will be the above described problems in a lithographic process. In order to remove theopaque defect 24 remaining, as shown inFIG. 2C , etching gas (XeF2) is sprayed to the remaining defect region, and as shown inFIG. 2D , this time an electron beam is irradiated to that region, and the defect section is removed completely. This processing is gas assisted etching using an electron beam, which means that there is no injection of gallium into the sample, and the gallium that was implanted by the previous ion beam process is removed together with the residual opaque defect. This is the opaque defect correction method of the present invention. - This photomask opaque defect correction is good for acquiring transparency of a glass substrate section, and with respect to thickness of a glass substrate, differing from the case of a phase shifter, which will be described later, there is no requirement for stringency. Bearing this point in mind, with this opaque defect correction, using FIB processing the thin layer of the remaining
opaque defect 24 shown inFIG. 2C will be completely removed without leaving any behind, and even with a process for removing a gallium impregnation layer injected inside the glass substrate using an electron beam, there is no particular problem. In that case, it is possible to terminate FIB processing by detecting that there is no longer any opaque defect using the ion type identification function of the secondary chargedparticle detector 7, and automatically switching-to electron beam processing, which is extremely advantageous from the point of view of working capacity. - Also, in the case where the observed defect is a mask void defect (transparent defect), as shown in cross section in
FIG. 3A , then in order to remove the transparent defect CVD source material, gas is sprayed to the defect region as shown inFIG. 3B , and a focused ion beam or an electron beam is irradiated to that region. In this way, the defect is corrected by forming a localized film by deposition using an ion beam or an electron beam. With a conventional mask in the case of a normal transparent defect, since there is a region where light is shielded, there is no problem due to light absorption even if liquid gallium is used in the ion source and gallium elements are implanted into the correction region. Accordingly, for transparent defects, it is possible to carry out correction using a focused ion beam. - Next, a correction procedure-when a sample is a phase shift mask will be described. Similarly to the previous case, first of all, in order to carry out observation of the correction region, an electron beam or a focused ion beam is scanned and a secondary electron mage is detected by the
detector 7 to acquire a microscope image. Defect regions are identified using image observation and the mask correction regions are positioned. If damage to thephase shifter film 42 is taken into consideration, it is preferable to carry out observation with an SEM image using an electron beam. In the case where the observed defect is a void defect in thephase shifter film 42 such as shown in cross section inFIG. 4A , in order to fill up and correct that void defect, as shown inFIG. 4B , CVD gas (Silicon type gas such as TEOS) is sprayed to the defect region and an electron beam EB is irradiated to that region. In this way, it is possible to form a transparent film and to correct thephase shifter film 42. Since the phase shift film has a region that light passes through, in processing at this time a focused ion beam that would cause a problem of gallium contamination is not used, and instead deposition is carried out using an electron beam. - Also,
FIG. 4C is a cross sectional drawing of a bump defect on thephase shifter film 42 of a phase shift mask. This bump defect is a redundant defect, basically the same as the opaque defect, and must be removed. In order to remove the bump defect, etching gas is sprayed to the defect region, as shown inFIG. 4D , and an electron beam or focused ion beam is irradiated to that region to remove it by gas assisted etching. As described previously, thisphase shifter film 42 constitutes a region of a mask through which light passes, and therefore no light absorption problem arises if gallium remains. When correction is carried out by etching using an electron beam from the start, this gallium residue contamination problem does not arise. However, when removing a bump defect using gas assisted etching using a focused ion beam because the bump defect is large or the like, similarly to the case of the opaque defect, the bump defect is not completely removed and remains thinly. Gallium is implanted and injected into this thinly remaining defect section. Then, as finishing processing to remove this gallium contaminated section etching gas is sprayed to the defect region and an electron beam is irradiated to that region. It is possible to remove a damaged section caused by the ion beam irradiation and the bump defect region by this gas assisted etching using an electron beam. - In the case of this phase shift mask, differing from the previous case of the photomask, the glass substrate is not simply transparent, and the thickness dimension of the glass substrate influences phase of light. Therefore, in the FIB processing, a thin layer of redundant defect, such as an opaque defect, remains, and in finishing processing it is essential not to shave off the glass substrate. For example, in a pretest, secondary ion detection is carried out and the time until opaque defect material is no longer detected measured, and when carrying out actual processing, processing time corresponding to the defect is calculated from that measured time and it is possible to have a method where processing using the FIB is terminated.
- Also,
FIG. 5A shows a cross section of a cut remnant defect when forming a phase shift mask by etching glass. A phase shift mask that has been cut out will not perform the intended phase shift if the depth of the cut-out is not that required for the phase shift. Accordingly, a method for correcting this cutremnant defect 51 is realized in conformity with the previous cases for the opaque defect and phase shift film bump defect, since it is basically a redundant defect. That is, using the device of the present invention, etching gas is sprayed to the defect region, and an electron beam or a focused ion beam is irradiated to that region to carry out gas assisted etching, as shown inFIG. 5B , to remove the defect. Because the cut out region of thisglass substrate 23 constitutes a region of a phase shift mask through which light passes, if gallium remains, a light absorption problem will arise. In the case where correction is carried out by etching using an electron beam from the start, this problem of gallium residue contamination will not arise. However, when a bump defect is removed by gas assisted etching using a focused ion beam because the defect is large etc., similarly to the opaque defect the bump defect is not removed completely and a thin part remains. Since gallium is implanted and injected into this thinly remaining defect section, finishing processing is carried out by irradiating an electron beam to the gallium contaminated section to be removed and performing gas assisted etching. - Because the mask has the
glass substrate 23, there is a problem of electrical charge in the process of irradiating the charged particles. This charge causes influence on electrostatic force at the time of beam irradiation, and impairs the observation image, and so with the process of the present invention, the charge is cancelled as required by operation of acharge neutralizer 9. - The mask correction method of the present invention, in a correction process for removing redundant sections such as photomask opaque defects of phase shifter bump defects, comprises the steps of coarse correction by etching using a focused ion beam, and then finishing processing using an electron beam, which means that even if correction processing using a focused ion beam is carried out, it is possible to remove surface damage due to gallium irradiation and residual gallium.
- Also, by providing a composite charged particle beam device of the present invention with two lens barrels, namely an electron beam lens barrel capable of carrying out processing and an FIB lens barrel in the sample chamber, as well as providing a gas introduction device for spraying a CVD source material gas and/or an etching assist gas to a beam irradiation position, there is the advantage that it is possible to selectively perform etching or deposition carried out using a focused ion beam or an electron beam. In disadvantageous cases where there is gallium contamination in material filled into defect sections, such as a void defect of a phase shifter mask, it is possible to carry out deposition with only gas assisted etching using an electron beam, and in cases of correction processing to remove redundant sections such as mask opaque defects or phase shifter bump defects, it is possible to have steps of coarse correction by etching using a focused ion beam, and then finishing processing using a particle beam. It is also possible to carry out correction processing depending on the type of defect, so as to remove residual gallium due to gallium irradiation.
- Also, when, using the composite charged particle beam device of the present invention, executing a mask correction method comprising a step of acquiring an SEM image with an electron beam and a step of positioning defect correction locations on the SEM image, there is no problem of damage and contamination of the sample surface due to a focused ion beam as there would be when using a scanning image using a focused ion beam.
- Further, the mask correction composite charged particle beam device of the present invention can monitor processing state, due to the fact that it is provided with a secondary charged particle detector capable of discriminatively detecting secondary electrons and secondary ions. Accordingly, it is possible to terminate FIB processing by detecting that there is no longer any opaque defect, and automatically switch to electron beam processing, which is extremely advantageous with respect to working capacity
Claims (4)
1-6. (canceled)
7. A composite charged particle beam device for mask correction, comprising:
a focused ion beam lens barrel fitted inside a sample chamber and an electron beam lens barrel capable of irradiating a powerful beam for processing; and
a gas introduction unit for spraying CVD source material gas or etching assist gas to beam irradiation positions from each of the lens barrels.
8. The composite charged particle beam device for mask correction of claim 7 , further comprising a secondary electron detector capable of discriminately detecting secondary electrons and secondary ions, for monitoring processing state.
9. The composite charged particle beam device for mask correction of claim 7 , wherein the electron beam lens barrel obtains a beam current value of from a few pA to a number of tens of pA, and obtains a current value of a number of nA.
Priority Applications (1)
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US11/646,723 US20070267579A1 (en) | 2002-11-27 | 2006-12-28 | Photomask correction method using composite charged particle beam, and device used in the correction method |
Applications Claiming Priority (4)
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JP2002-344140 | 2002-11-27 | ||
JP2002344140A JP2004177682A (en) | 2002-11-27 | 2002-11-27 | Method for repairing photomask by compound charged particle beam and apparatus therefor |
US10/721,522 US7172839B2 (en) | 2002-11-27 | 2003-11-24 | Photomask correction method using composite charged particle beam, and device used in the correction method |
US11/646,723 US20070267579A1 (en) | 2002-11-27 | 2006-12-28 | Photomask correction method using composite charged particle beam, and device used in the correction method |
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US10/721,522 Division US7172839B2 (en) | 2002-11-27 | 2003-11-24 | Photomask correction method using composite charged particle beam, and device used in the correction method |
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US10/721,522 Expired - Lifetime US7172839B2 (en) | 2002-11-27 | 2003-11-24 | Photomask correction method using composite charged particle beam, and device used in the correction method |
US11/646,723 Abandoned US20070267579A1 (en) | 2002-11-27 | 2006-12-28 | Photomask correction method using composite charged particle beam, and device used in the correction method |
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Cited By (2)
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US20110183523A1 (en) * | 2008-08-14 | 2011-07-28 | Carl Zeiss Sms Gmbh | method for electron beam induced etching of layers contaminated with gallium |
US20110183444A1 (en) * | 2008-08-14 | 2011-07-28 | Carl Zeiss Sms Gmbh | method for electron beam induced etching |
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JP2004191358A (en) * | 2002-11-27 | 2004-07-08 | Seiko Instruments Inc | Sample preparation method and device by composite charge particle beam |
US7727681B2 (en) * | 2003-01-16 | 2010-06-01 | Fei Company | Electron beam processing for mask repair |
WO2005092025A2 (en) * | 2004-03-22 | 2005-10-06 | Kla-Tencor Technologies Corp. | Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis |
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KR100854459B1 (en) * | 2007-02-14 | 2008-08-27 | 주식회사 하이닉스반도체 | Method for repairing defect of photomask |
DE102007028172B3 (en) * | 2007-06-20 | 2008-12-11 | Advanced Mask Technology Center Gmbh & Co. Kg | EUV mask and procedure for repairing an EUV mask |
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JP2010170019A (en) * | 2009-01-26 | 2010-08-05 | Toshiba Corp | Method for removing foreign substance of lithography original and method for manufacturing lithography original |
JP5962353B2 (en) * | 2012-09-06 | 2016-08-03 | 大日本印刷株式会社 | Method for producing template for nanoimprint lithography |
JP6311385B2 (en) * | 2014-03-24 | 2018-04-18 | 大日本印刷株式会社 | Photomask manufacturing method |
JP6814109B2 (en) * | 2017-08-25 | 2021-01-13 | 株式会社日立製作所 | Microstructure processing method and microstructure processing equipment |
CN112967948B (en) * | 2020-08-05 | 2022-05-20 | 重庆康佳光电技术研究院有限公司 | Gallium metal removing device and gallium metal removing method |
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US20110183523A1 (en) * | 2008-08-14 | 2011-07-28 | Carl Zeiss Sms Gmbh | method for electron beam induced etching of layers contaminated with gallium |
US20110183444A1 (en) * | 2008-08-14 | 2011-07-28 | Carl Zeiss Sms Gmbh | method for electron beam induced etching |
US8632687B2 (en) * | 2008-08-14 | 2014-01-21 | Carl Zeiss Sms Gmbh | Method for electron beam induced etching of layers contaminated with gallium |
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Also Published As
Publication number | Publication date |
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JP2004177682A (en) | 2004-06-24 |
US20040131953A1 (en) | 2004-07-08 |
US7172839B2 (en) | 2007-02-06 |
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