US20060113634A1 - Bipolar junction transistor with improved extrinsic base region and method of fabrication - Google Patents

Bipolar junction transistor with improved extrinsic base region and method of fabrication Download PDF

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US20060113634A1
US20060113634A1 US11/269,477 US26947705A US2006113634A1 US 20060113634 A1 US20060113634 A1 US 20060113634A1 US 26947705 A US26947705 A US 26947705A US 2006113634 A1 US2006113634 A1 US 2006113634A1
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base region
layer
transistor
extrinsic base
pedestal
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Shahriar Ahmed
Ravindra Soman
Anand Murthy
Mark Bohr
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H01L29/66287—Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42304—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66242—Heterojunction transistors [HBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors

Definitions

  • This invention relates to the field of bipolar transistors.
  • the design and fabrication of the base region is particularly critical to the performance of the transistor.
  • the extrinsic base region is formed by ion implantation of a dopant which is activated thermally. This presents its own problems including unwanted lateral diffusion and the need for high temperature processing. Problems associated with the prior art ion implantation of the extrinsic base region are discussed in conjunction with FIG. 1 .
  • FIG. 1 is a cross-sectional, elevation view of a prior art bipolar junction transistor.
  • FIG. 2 illustrates a cross-sectional, elevation view of a monocrystalline silicon substrate with spaced-apart isolation regions.
  • FIG. 3 illustrates the substrate of FIG. 2 after an epitaxial layer has been grown.
  • FIG. 4 illustrates the substrate of FIG. 3 after patterning of the epitaxial layer and the formation and patterning of an overlying oxide layer.
  • FIG. 5 illustrates the substrate of FIG. 4 after the deposition of a polysilicon layer and a hard mask layer.
  • FIG. 6 illustrates the substrate of FIG. 5 after the formation of a emitter pedestal and the formation of an emitter region in the epitaxial layer.
  • FIG. 7 illustrates the substrate of FIG. 6 after an additional oxide layer has been formed.
  • FIG. 8 illustrates the substrate of FIG. 7 after spacers have been formed around the emitter pedestal.
  • FIG. 9 illustrates the substrate of FIG. 8 after etching of the epitaxial layer including undercutting of the spacers.
  • FIG. 10 illustrates the substrate of FIG. 9 after another epitaxial layer has been grown.
  • bipolar transistors are described in conjunction with FIG. 1 .
  • the collector of an NPN transistor is formed in a substrate 10 .
  • the substrate comprises a monocrystalline silicon substrate doped with an N type dopant.
  • the transistor is formed between two isolation regions 16 formed in the substrate 10 .
  • an epitaxial layer is grown on the substrate 10 .
  • This layer may be a silicon-germanium layer.
  • the base and emitter regions for the transistor are formed in this layer.
  • the base region of the transistor comprises the intrinsic base region 13 , the link base region 14 , and the extrinsic base region 15 .
  • the emitter region 12 is produced by defining an opening in an oxide layer 17 , forming a doped polysilicon emitter pedestal 11 and driving dopant from the pedestal to produce an emitter region 12 .
  • boron for instance, is ion implanted in alignment with the spacers 18 to reduce the resistance of the extrinsic base region 15 .
  • a number of problems are associated with this ion implantation.
  • the implanted dopant cannot be activated sufficiently.
  • some damage is introduced into the intrinsic base region because of the ion implantation, thereby restricting the formation of a high quality intrinsic base region 13 .
  • margins need to be built into the dimensions to provide for critical dimensions and registration. This increase in the length of the extrinsic base and overall size of the transistor. The larger size increases the base and collector resistance and the base-collector and the collector-to-substrate capacitance. Consequently, the performance, especially the maximum oscillation frequency F max , degrades.
  • severe thermal restrictions are imposed because of the relatively high temperatures needed to activate the dopant. The inevitable lateral diffusion reduces the lateral abruptness of the heavily doped extrinsic base region 15 , thereby increasing the resistance even at a relatively high doping level.
  • the present invention decreases the resistance in the key points of the extrinsic and link base regions, thereby increasing F max and the overall noise performance without impacting the devices cutoff frequency (F t ).
  • the initial fabrication of a transistor for one embodiment of the present invention begins in a similar manner as with the prior art.
  • a pair of spaced-apart isolation regions 22 are fabricated in a monocrystalline silicon substrate 20 , as shown in FIG. 2 .
  • the isolation regions 22 may be oxide filled trenches.
  • the substrate 20 is doped with an N type dopant for the described embodiment to define a collector region for the transistor.
  • an epitaxial layer 23 is grown on the substrate 20 .
  • An ordinary epitaxial layer approximately 1,000 ⁇ thick is grown, for one embodiment.
  • Layer 23 is doped with, for instance, boron.
  • the dopant profile in the layer 23 provides for more dopant in the lower regions of the layer and less dopant in the upper regions of the layer.
  • the P type dopant for this profile may have a doping level of, for instance, approximately 10 18 -10 19 atoms cm ⁇ 3 as its peak doping level.
  • the monocrystalline layer 23 in one embodiment, comprises silicon-germanium.
  • the layer 23 is patterned to form a epitaxial layer 23 covering an area which is limited to a single transistor.
  • the number used to identify a layer is also used to designate a part of that layer that remains after etching or patterning. Thus, the number “ 23 ” is used to designate the layer before etching and the portion of the layer remaining after etching.) Only one dimension of the layer 23 is shown in the cross-sectional view of FIG. 4 . It will be appreciated that the layer 23 and other layers are also patterned in a second dimension.
  • an oxide layer 25 which may be a chemical vapor deposited (CVD) silicon dioxide layer is deposited over the substrate.
  • the oxide layer 25 is patterned to obtain an opening 26 , which enables the fabrication of an emitter region in the layer 23 , as will be seen.
  • the opening 26 may be 1,000 ⁇ across.
  • a polysilicon layer 28 for instance, 1,700-2,000 ⁇ thick, is now deposited over the structure of FIG. 4 , as shown in FIG. 5 .
  • the polysilicon layer 28 is doped with an N type dopant, such as arsenic, as it is deposited or by ion implantation of an N type dopant after its deposition.
  • a layer 29 used to form a hard mask is then deposited over layer 28 .
  • a material such as silicon nitride may be used for layer 29 .
  • the layer 29 is patterned into a mask, which is used to define the pedestal 28 of FIG. 6 . Additionally, the underlying oxide layer 25 is patterned so that the pedestal rests on the oxide regions 25 shown in FIG. 6 .
  • the dopant from the pedestal 28 is driven into the epitaxial layer 23 to define the N type emitter region 30 of FIG. 6 .
  • An ordinary thermal process is used.
  • the intrinsic base region width remaining in the layer 28 is 700-800 ⁇ after the emitter region is formed.
  • a pedestal structure includes the emitter pedestal 28 , the sidewall spacers 32 , and the underlying region 25 which defines an opening for the emitter, as best shown in FIG. 8 .
  • isotropic etching is used to etch the epitaxial layer 23 in alignment with the spacers 32 .
  • This again may be a plasma etching process.
  • An etchant that discriminates between the oxide and silicon is used. This results in a thinning of the epitaxial layer 23 as shown by the dimension 35 of FIG. 9 , and an undercutting of the spacers 32 as shown by the undercut 36 of FIG. 9 .
  • the hard mask 22 protects the polysilicon pedestal 28 .
  • the oxide regions 25 disposed under the pedestal 28 prevent the formation of a parasitic path between the pedestal and the layer 23 .
  • the undercutting 36 is shown to have a vertical surface, it may be slightly curved, with more of an undercut at the upper section. The etching chemistry may be adjusted to keep this undercut as vertical as possible.
  • FIGS. 8 and 9 two separate etching processes have been described, one used to form the spacers 32 and the other to etch the epitaxial layer 23 , these may be combined in a single etching chamber.
  • the gas flows to an etching chamber may be changed after the etching of the oxide layer 32 , to cause the silicon of layer 23 to be etched.
  • a second epitaxial layer 40 is now grown over the layer 23 . This may be done with a selective formation of an epitaxial layer or the non-selective formation and a subsequent patterning of the second epitaxial layer.
  • layer 40 is a monocrystalline silicon-germanium layer seeded from layer 23 .
  • the layer 40 is the extrinsic base region for the NPN transistor.
  • Layer 40 is very heavily doped with a P type dopant such as boron.
  • a P type dopant such as boron.
  • in-situ doping may occur to near the saturation level of the dopant in the silicon-germanium. Doping to a level of 10 20 -10 21 atoms cm ⁇ 3 or greater may be used.
  • the dopant can also be introduced into the layer 40 through ion implantation. Where necessary, the layer 40 can be strained to increase dopant incorporation and enhance the dopant's mobility. Note that the layer 40 also extends into the link base regions.
  • the extrinsic base thus formed is self-aligned to the emitter polysilicon region 30 . Unlike the prior art, there is no lateral extension of the extrinsic base that may approach the emitter region.
  • the regions 25 provide isolation between the layer 40 and the emitter polysilicon of the pedestal 28 . Also note that the layer 40 has relative vertical sides and a flat bottom where it engages the layer 23 . There is thus, an abrupt transition of doping levels.
  • a reduction in extrinsic base length of approximately 30% and an overall transistor size reduction of 20% is realized through the self-aligning process described above.
  • the thermal cycle and growth conditions for the layer 40 By controlling the lateral undercutting 36 of FIG. 9 , the thermal cycle and growth conditions for the layer 40 , the length of the link base region can be reduced and the height of layer 40 over the original layer 23 can be increased. All of this results in additional reduction in the base resistance.

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Abstract

A bipolar transistor and its fabrication are described. The extrinsic base region is formed by growing a second, more heavily doped, epitaxial layer over a first epitaxial layer. The second layer extends under, and is insulated from, an overlying polysilicon emitter pedestal.

Description

  • This is a divisional of application Ser. No. 10/715,971, filed on Nov. 17, 2003.
    • FIELD OF THE INVENTION
  • This invention relates to the field of bipolar transistors.
    • PRIOR ART
  • In the design and fabrication of bipolar transistors, especially high performance bipolar junction transistors, the design and fabrication of the base region is particularly critical to the performance of the transistor.
  • Often increased performance is achieved through a reduction in the intrinsic base width. This, however, inevitably increases the intrinsic and link base resistances. If intrinsic base resistance is reduced by the incorporation of additional dopant in this region, there is an increase in the width of the intrinsic base with a corresponding degradation in performance. Thus, it is often difficult to increase performance with changes to only the intrinsic base region.
  • Increased performance can also be obtained by decreasing the resistance in the extrinsic base region. Typically, the extrinsic base region is formed by ion implantation of a dopant which is activated thermally. This presents its own problems including unwanted lateral diffusion and the need for high temperature processing. Problems associated with the prior art ion implantation of the extrinsic base region are discussed in conjunction with FIG. 1.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a cross-sectional, elevation view of a prior art bipolar junction transistor.
  • FIG. 2 illustrates a cross-sectional, elevation view of a monocrystalline silicon substrate with spaced-apart isolation regions.
  • FIG. 3 illustrates the substrate of FIG. 2 after an epitaxial layer has been grown.
  • FIG. 4 illustrates the substrate of FIG. 3 after patterning of the epitaxial layer and the formation and patterning of an overlying oxide layer.
  • FIG. 5 illustrates the substrate of FIG. 4 after the deposition of a polysilicon layer and a hard mask layer.
  • FIG. 6 illustrates the substrate of FIG. 5 after the formation of a emitter pedestal and the formation of an emitter region in the epitaxial layer.
  • FIG. 7 illustrates the substrate of FIG. 6 after an additional oxide layer has been formed.
  • FIG. 8 illustrates the substrate of FIG. 7 after spacers have been formed around the emitter pedestal.
  • FIG. 9 illustrates the substrate of FIG. 8 after etching of the epitaxial layer including undercutting of the spacers.
  • FIG. 10 illustrates the substrate of FIG. 9 after another epitaxial layer has been grown.
    • DETAILED DESCRIPTION
  • In the following description, a method for fabricating a bipolar transistor and its structure are described. Numerous specific details are set forth, such as specific doping levels, in order to provide a thorough understanding of the present invention. It will be apparent to one skilled in the art that the present invention may be practiced without these specific details. In other instances, well-known processing used in the fabrication of semiconductor integrated circuits is not described in detail, in order not to unnecessarily obscure the present invention. Moreover, in the following description, the formation and structure of an NPN transistor is described. It will be apparent to one skilled in the art that the description is applicable to the formation of a PNP transistor.
  • Before describing an embodiment of the present invention, problems associated with prior art, bipolar transistors are described in conjunction with FIG. 1.
  • In FIG. 1, the collector of an NPN transistor is formed in a substrate 10. The substrate comprises a monocrystalline silicon substrate doped with an N type dopant. The transistor is formed between two isolation regions 16 formed in the substrate 10.
  • In the formation of the transistor of FIG. 1, an epitaxial layer is grown on the substrate 10. This layer may be a silicon-germanium layer. Then, the base and emitter regions for the transistor are formed in this layer. The base region of the transistor comprises the intrinsic base region 13, the link base region 14, and the extrinsic base region 15.
  • The emitter region 12 is produced by defining an opening in an oxide layer 17, forming a doped polysilicon emitter pedestal 11 and driving dopant from the pedestal to produce an emitter region 12.
  • After the emitter is formed, boron, for instance, is ion implanted in alignment with the spacers 18 to reduce the resistance of the extrinsic base region 15.
  • A number of problems are associated with this ion implantation. First, the implanted dopant cannot be activated sufficiently. Secondly, some damage is introduced into the intrinsic base region because of the ion implantation, thereby restricting the formation of a high quality intrinsic base region 13. Thirdly, margins need to be built into the dimensions to provide for critical dimensions and registration. This increase in the length of the extrinsic base and overall size of the transistor. The larger size increases the base and collector resistance and the base-collector and the collector-to-substrate capacitance. Consequently, the performance, especially the maximum oscillation frequency Fmax, degrades. Finally, severe thermal restrictions are imposed because of the relatively high temperatures needed to activate the dopant. The inevitable lateral diffusion reduces the lateral abruptness of the heavily doped extrinsic base region 15, thereby increasing the resistance even at a relatively high doping level.
  • As will be seen, the present invention decreases the resistance in the key points of the extrinsic and link base regions, thereby increasing Fmax and the overall noise performance without impacting the devices cutoff frequency (Ft).
  • The initial fabrication of a transistor for one embodiment of the present invention begins in a similar manner as with the prior art. First, a pair of spaced-apart isolation regions 22 are fabricated in a monocrystalline silicon substrate 20, as shown in FIG. 2. The isolation regions 22 may be oxide filled trenches. The substrate 20 is doped with an N type dopant for the described embodiment to define a collector region for the transistor.
  • Next, as shown in FIG. 3, an epitaxial layer 23 is grown on the substrate 20. An ordinary epitaxial layer approximately 1,000 Å thick is grown, for one embodiment. Layer 23 is doped with, for instance, boron. The dopant profile in the layer 23 provides for more dopant in the lower regions of the layer and less dopant in the upper regions of the layer. The P type dopant for this profile may have a doping level of, for instance, approximately 1018-1019 atoms cm−3 as its peak doping level. The monocrystalline layer 23, in one embodiment, comprises silicon-germanium.
  • Now, as shown in FIG. 4, the layer 23 is patterned to form a epitaxial layer 23 covering an area which is limited to a single transistor. (The number used to identify a layer is also used to designate a part of that layer that remains after etching or patterning. Thus, the number “23” is used to designate the layer before etching and the portion of the layer remaining after etching.) Only one dimension of the layer 23 is shown in the cross-sectional view of FIG. 4. It will be appreciated that the layer 23 and other layers are also patterned in a second dimension.
  • After the layer 23 has been etched, an oxide layer 25, which may be a chemical vapor deposited (CVD) silicon dioxide layer is deposited over the substrate. The oxide layer 25 is patterned to obtain an opening 26, which enables the fabrication of an emitter region in the layer 23, as will be seen. By way of example, the opening 26 may be 1,000 Å across.
  • A polysilicon layer 28, for instance, 1,700-2,000 Å thick, is now deposited over the structure of FIG. 4, as shown in FIG. 5. The polysilicon layer 28 is doped with an N type dopant, such as arsenic, as it is deposited or by ion implantation of an N type dopant after its deposition. A layer 29 used to form a hard mask is then deposited over layer 28. A material such as silicon nitride may be used for layer 29. The layer 29 is patterned into a mask, which is used to define the pedestal 28 of FIG. 6. Additionally, the underlying oxide layer 25 is patterned so that the pedestal rests on the oxide regions 25 shown in FIG. 6.
  • The dopant from the pedestal 28 is driven into the epitaxial layer 23 to define the N type emitter region 30 of FIG. 6. An ordinary thermal process is used. Typically, the intrinsic base region width remaining in the layer 28 is 700-800 Å after the emitter region is formed.
  • Next, another oxide layer, again for instance, a CVD, silicon dioxide layer 32 is deposited over the structure of FIG. 6 as shown in FIG. 7. Then, with ordinary anisotropic etching, for instance, with a dry plasma etching process, the layer 32 is etched. Spacers 32 remain from this etching, vertically disposed on the sides of the pedestal 28. Thus, a pedestal structure includes the emitter pedestal 28, the sidewall spacers 32, and the underlying region 25 which defines an opening for the emitter, as best shown in FIG. 8.
  • Now, isotropic etching is used to etch the epitaxial layer 23 in alignment with the spacers 32. This again may be a plasma etching process. An etchant that discriminates between the oxide and silicon is used. This results in a thinning of the epitaxial layer 23 as shown by the dimension 35 of FIG. 9, and an undercutting of the spacers 32 as shown by the undercut 36 of FIG. 9. Note that during this etching, the hard mask 22 protects the polysilicon pedestal 28. Also note, the oxide regions 25 disposed under the pedestal 28 prevent the formation of a parasitic path between the pedestal and the layer 23. While the undercutting 36 is shown to have a vertical surface, it may be slightly curved, with more of an undercut at the upper section. The etching chemistry may be adjusted to keep this undercut as vertical as possible.
  • While in FIGS. 8 and 9, two separate etching processes have been described, one used to form the spacers 32 and the other to etch the epitaxial layer 23, these may be combined in a single etching chamber. For instance, the gas flows to an etching chamber may be changed after the etching of the oxide layer 32, to cause the silicon of layer 23 to be etched.
  • As shown in FIG. 10, a second epitaxial layer 40 is now grown over the layer 23. This may be done with a selective formation of an epitaxial layer or the non-selective formation and a subsequent patterning of the second epitaxial layer. In one embodiment, layer 40 is a monocrystalline silicon-germanium layer seeded from layer 23.
  • The layer 40 is the extrinsic base region for the NPN transistor. Layer 40 is very heavily doped with a P type dopant such as boron. For example, in-situ doping may occur to near the saturation level of the dopant in the silicon-germanium. Doping to a level of 1020-1021 atoms cm−3 or greater may be used. The dopant can also be introduced into the layer 40 through ion implantation. Where necessary, the layer 40 can be strained to increase dopant incorporation and enhance the dopant's mobility. Note that the layer 40 also extends into the link base regions.
  • Importantly, note from FIG. 10, that the extrinsic base thus formed is self-aligned to the emitter polysilicon region 30. Unlike the prior art, there is no lateral extension of the extrinsic base that may approach the emitter region. The regions 25 provide isolation between the layer 40 and the emitter polysilicon of the pedestal 28. Also note that the layer 40 has relative vertical sides and a flat bottom where it engages the layer 23. There is thus, an abrupt transition of doping levels.
  • A reduction in extrinsic base length of approximately 30% and an overall transistor size reduction of 20% is realized through the self-aligning process described above. By controlling the lateral undercutting 36 of FIG. 9, the thermal cycle and growth conditions for the layer 40, the length of the link base region can be reduced and the height of layer 40 over the original layer 23 can be increased. All of this results in additional reduction in the base resistance.
  • Thus, an improved bipolar transistor has been described where the extrinsic base is a separately formed epitaxial layer.

Claims (7)

1-16. (canceled)
17. A bipolar transistor comprising:
a monocrystalline extrinsic base region having relatively vertical sidewalls adjacent a monocrystalline link base region, the extrinsic base region being more heavily doped than the adjacent link base region.
18. The transistor defined by claim 17, wherein the extrinsic base region is doped to a level 10 times or greater than the doping level in the adjacent link base region.
19. The transistor of claim 17, including an emitter pedestal structure having, an emitter pedestal, sidewall spacers on the sides of the pedestal, and oxide regions under the pedestal having an opening communicating with an emitter region of the transistor, wherein the extrinsic base region extends under the spacers.
20. The transistor defined by claim 17, wherein the monocrystalline extrinsic base region is disposed on an underlying monocrystalline layer having the link base region and an intrinsic base region for the transistor.
21. The transistor defined by claim 20, wherein the monocrystalline extrinsic base region is doped to a level 10 times or greater than the doping level in the adjacent link base region.
22. The transistor defined by claim 21, wherein the extrinsic base region and underlying monocrystalline layer are silicon-germanium.
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CN102709318A (en) * 2012-05-16 2012-10-03 清华大学 Embedded epitaxial external base region bipolar transistor and preparation method thereof
US20140329368A1 (en) * 2012-05-16 2014-11-06 Tsinghua University Bipolar transistor with embedded epitaxial external base region and method of forming the same
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TW200518339A (en) 2005-06-01
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