US20050189073A1 - Gas delivery device for improved deposition of dielectric material - Google Patents
Gas delivery device for improved deposition of dielectric material Download PDFInfo
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- US20050189073A1 US20050189073A1 US11/099,019 US9901905A US2005189073A1 US 20050189073 A1 US20050189073 A1 US 20050189073A1 US 9901905 A US9901905 A US 9901905A US 2005189073 A1 US2005189073 A1 US 2005189073A1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4558—Perforated rings
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45589—Movable means, e.g. fans
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Definitions
- the gas delivery device of the present invention prevents the formation of material voids associated with the inconsistent flow rates of process gas during material deposition processes, such as an HDP CVD process, while reducing or eliminating any problems associated with non-uniform distribution of process gas within a reaction chamber.
- the present invention includes a method of carrying out a material deposition process.
- the method of the present invention includes providing a reaction chamber, providing a gas delivery device according to any one of the embodiments of the gas delivery device of the present invention, disposing a semiconductor substrate within the reaction chamber, and introducing a desired process gas into the reaction chamber using the gas delivery device of the present invention.
- process gas upon passing through each of the active diffusers 58 a - 58 d, process gas does not enter a manifold to be distributed to each of the gas delivery nozzles 36 a - 36 h. Instead, process gas passes directly from each active diffuser 58 a - 58 d to an associated gas delivery nozzle 36 a - 36 h through one of the tertiary gas lines 114 a - 114 h.
- the gas delivery system need not include tertiary gas lines.
- the gas delivery device 130 of the present invention may only include a primary gas delivery line 104 , a plenum 106 , secondary gas delivery lines 108 a - 108 h, and a plurality of active diffusers 58 a - 58 h associated with a plurality of gas delivery nozzles 36 a - 36 h, which extend through a reaction chamber wall 118 .
- Such a design avoids the potential problems associated with a gas delivery device incorporating one or more manifolds and is simpler in construction and operation than the gas delivery devices of the fourth and fifth embodiments.
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- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
A gas delivery device useful in material deposition processes executed during semiconductor device fabrication in a reaction chamber, including the gas delivery device of the present invention and a method for carrying out a material deposition process, including introducing process gas into a reaction chamber using the gas delivery device of the present invention. In each embodiment, the gas delivery device of the present invention includes a plurality of active diffusers and a plurality of gas delivery nozzles, which extend into the reaction chamber. Before entering the reaction chamber through one of the plurality of gas delivery nozzles, process gas must first pass through one of the plurality active diffusers. Each of the active diffusers is centrally controllable such that the rate at which process gas flows through each active diffuser is exactly controlled at all times throughout a given deposition process.
Description
- This application is a continuation of application Ser. No. 09/649,897, filed Aug. 28, 2000, pending.
- 1. Field of the Invention: The present invention relates to reaction chambers used for the deposition of material layers during fabrication of semiconductor devices. Specifically, the present invention relates to an improved gas delivery device for improved control of chemical vapor delivery within a semiconductor device fabrication chamber.
- 2. State of the Art: As is well known, processes for semiconductor device fabrication generally involve the deposition and processing of one or more material layers on a semiconductor substrate. Often, these different material layers are formed using well-known chemical vapor deposition (CVD) processes, such as thermally enhanced (TE) CVD, plasma enhanced (PE) CVD or high density plasma (HDP) CVD. Such techniques require placing a semiconductor substrate within a sealed reaction chamber and introducing one or more chemical vapors into the sealed reaction chamber under conditions known to result in the deposition of a desired material. However, in order to ensure the deposition of high-quality material layers using known deposition techniques, the quantity and quality of the gaseous chemicals entering the sealed reaction chamber must be carefully controlled throughout the deposition process. Failure to control the amount of chemical vapor entering a reaction chamber, the distribution of chemical vapor within the reaction chamber, or the rate at which a given amount of chemical vapor enters the reaction chamber can each result in low-quality material layers that substantially compromise the quality of the subsequently completed semiconductor device.
- For example, HDP CVD processes are often used to fill various features, such as isolation gaps or trenches, included in an intermediate semiconductor device structure with a dielectric material, such as silicon dioxide (SiO2). HDP CVD processes are currently favored for filling isolation gaps or trenches because the simultaneous dielectric deposition and sputter etch produced by such processes allows small, high aspect ratio features to be reliably filled with dielectric material. However, imprecise control of the reactant gases used for HDP deposition will either result in damage to underlying device features or deposition of a low-quality dielectric layer, either of which significantly reduces the performance and reliability of subsequently completed semiconductor devices.
- Presently used HDP CVD processes often utilize a gas mixture containing oxygen (O2 2), silane (SiH4), and inert gases, such as argon (Ar), in combination with plasma generation and application of an RF bias to the target substrate, to achieve simultaneous dielectric deposition and sputter etching. The interaction of SiH4 and O2 molecules in the HDP environment results in the deposition of silicon dioxide (SiO2) over the semiconductor substrate. However, as SiO2 is deposited over the semiconductor substrate, molecules of the inert gas included in the gas mixture are ionized by the plasma produced within the chamber. Due to the RF bias applied to the semiconductor substrate, the ionized molecules accelerate toward and impinge upon the surface of the substrate. As a result, SiO2 is simultaneously deposited on the wafer surface and sputter etched by accelerated ionized particles. In most HDP CVD processes, the ratio of deposition rate to etch rate ranges from about 2% to about 20%. It is the simultaneous deposition and sputter etch created by HDP CVD processes that allow higher aspect ratio features to be filled with the desired dielectric material.
- In order to better describe the simultaneous deposition and sputter etch of a typical HDP CVD process, drawing
FIG. 1 throughFIG. 4 schematically illustrate various stages of such a process. Illustrated in drawingFIG. 1 is anintermediate semiconductor device 5 including asemiconductor substrate 10 with anisolation gap 12 disposed between twocircuit elements 14. As can be seen in drawingFIG. 1 , due to the interaction of SiH4 with O2 during a typical HDP CVD process, a layer ofSiO 2 16 begins to form over the twocircuit elements 14 and within theisolation gap 12. As theSiO 2 16 is deposited, however, charged ions (not shown in drawingFIG. 1 ) impinge on and sputter etch the newly deposited layer ofSiO 2 16. Because the sputter etch rate created by the impinging ions is approximately three to four times higher at 45° than it is at 90°, facets 20 form at the corners of the twocircuit elements 14 during the deposition process. Illustrated in drawingFIGS. 2 through 4 is the continuing growth of the layer ofSiO 2 16 and filling of theisolation gap 12 as would be expected from an HDP process having an optimized deposition-to-etch ratio. - However, as is well known, the deposition-to-etch ratio can be controlled by varying the rate of flow of SiH4 or other process gases into the reaction chamber. For example, if the flow rate of SiH4 is increased, the deposition rate of the HDP CVD process will increase. As shown in drawing
FIG. 5 , if the deposition-to-etch ratio is increased above the optimum, thefacets 20 begin moving away from the corners of the twocircuit elements 14, andcusps 22 begin to form onsidewalls 24 of theisolation gap 12. Cusp formation is believed to result from redeposition of etched SiO2 on opposing surfaces through line-of-sight redeposition. Significantly, the rate of redeposition increases as the distance (represented by the letter “D”) betweenopposing facets 20 decreases. As thefacets 20 move away from the corners of the twocircuit elements 14, the line-of-sight paths are shortened and sidewall redeposition is increased. Eventually, thecusps 22 meet, preventing further deposition below thecusps 22 and creating avoid 25 in the dielectricmaterial layer SiO 2 16 deposited within theisolation gap 12, as can be seen in drawingFIG. 6 . - Additionally, if the rate at which inert gas (e.g., Ar) is introduced into an HDP CVD chamber is increased or flow of SiH4 is decreased, the sputter etch rate of the HDP CVD process will increase, thereby decreasing the deposition-to-etch ratio. As shown in drawing
FIG. 7 , decreasing the deposition-to-etch ratio can result in the etching or “clipping” of material from thecorners 23 of the twocircuit elements 14. Clipping progressively damages the circuit elements as the HDP CVD process progresses and will potentially compromise the performance of the twocircuit elements 14 or render the twocircuit elements 14 completely inoperable. - As is easily appreciated from the foregoing, the flow rate of reactant gases used to effect HDP CVD processes, particularly those gases that affect the deposition-to-etch ratio, must be precisely controlled. This is especially true as the device features to be filled by HDP CVD processes shrink well below 0.5 μm. However, known gas delivery systems used in conjunction with HDP CVD reactors do not provide the range of control necessary to consistently deposit high quality dielectric material within the ever-shrinking, high-aspect-ratio device features included in state of the art semiconductor devices.
- A typical
gas distribution device 28 used for gas delivery within an HDP CVD reaction chamber is illustrated in drawingFIG. 8 . Such agas distribution device 28 includes a single mass flow control valve (“MFC”) 30, agas inlet 32, amanifold ring 34, and a plurality of nozzles 36 a-36 h. Often during an initial period of a “gas-on” phase of an HDP CVD process, a build up of process gas pressure occurs within the gas delivery system, and where agas distribution device 28 such as the device illustrated in drawingFIG. 8 is used, the initial build up of process gas pressure results in a high initial flow of reactant gas through the nozzles located closest to thegas inlet 32. However, while this high flow is occurring at thenozzles gas inlet 32, very little, if any, reactant gas flows through thosenozzles gas inlet 32 for approximately one to two seconds. Thus, deposition of SiO2 on the target substrate begins in the area of the substrate underlying thosenozzles gas inlet 32 before any deposition has taken place in the area of the target substrate underlying thosenozzles gas inlet 32. Moreover, the initial build up of process gas pressure causes process gas to flow through thosenozzles gas inlet 32 at an undesirably high rate, and the deposition-to-etch ratio of the HDP CVD process moves away from the desired optimum, until the pressure of the process gas within thegas distribution device 28 stabilizes. - Where a gas delivery ring such as the one illustrated in drawing
FIG. 8 is used to deliver SiH4 during an HDP CVD process, the quality of the resulting dielectric material may, therefore, be severely compromised. During the initial period of an SiH4 gas-on phase, the high flow of SiH4 through thenozzles gas inlet 32 of thegas distribution device 28 will cause the deposition-to-etch ratio to increase away from the desired optimum. Even though this inconsistency may last as little as one second, the deposition-to-etch ratio is effected long enough to affect deposition of at least the initial nuclear layer of the deposited dielectric material in such a way as to cause voids or other material inconsistencies within the deposited dielectric layer as the deposition process continues. Thus, the inconsistent gas flow provided by known gas delivery rings often renders entire wafers or portions of wafers unusable. - As can be easily appreciated, there is a need in the art for a gas delivery apparatus that allows reliable, precise control of gas flow at all times during a material deposition process. Such a device would not only be desirable because it would eliminate the problems caused by the inconsistent delivery of process gases associated with known devices, but such a device will likely prove necessary as the dimensions of state of the art semiconductor devices continue shrink.
- The gas delivery device of the present invention addresses the foregoing needs by enabling precise control of process gas flow into a reaction chamber. In each embodiment, the gas delivery device of the present invention includes a plurality of active diffusers and a plurality of gas delivery nozzles which extend into the reaction chamber. Before entering the reaction chamber through one of the plurality of gas delivery nozzles, process gas must first pass through one of the plurality of active diffusers. Each of the active diffusers is centrally controllable such that the rate at which process gas flows through each active diffuser is exactly controlled at all times throughout a given deposition process. As a result, the gas delivery device of the present invention not only eliminates any undesirable increase in the rate of process gas flow during the initial period of a “gas on” phase of a material deposition process, but enables exact control of the deposition-to-etch ratio of any HDP CVD process. Further, each of the plurality of active diffusers included in the gas delivery device of the present invention is specifically positioned to minimize any inconsistencies in the time needed for the process gas to flow from the plurality of active diffusers and through each nozzle of the plurality of gas delivery nozzles. Thus, the gas delivery device of the present invention prevents the formation of material voids associated with the inconsistent flow rates of process gas during material deposition processes, such as an HDP CVD process, while reducing or eliminating any problems associated with non-uniform distribution of process gas within a reaction chamber.
- The present invention also includes a reaction chamber for use in material deposition processes. The reaction chamber includes a sealable chamber and a gas delivery device. The reaction chamber may further include various other known features necessary for carrying out a desired material deposition process. Significantly, because the reaction chamber incorporates the gas delivery device, the reaction chamber enables precise control of process gas dosing within the reaction chamber throughout any given material deposition process.
- Furthermore, the present invention includes a method of carrying out a material deposition process. The method of the present invention includes providing a reaction chamber, providing a gas delivery device according to any one of the embodiments of the gas delivery device of the present invention, disposing a semiconductor substrate within the reaction chamber, and introducing a desired process gas into the reaction chamber using the gas delivery device of the present invention.
- Various other aspects and advantages of the present invention will become apparent to those of skill in the art through consideration of the ensuing description, the accompanying drawings, and the appended claims.
- The figures presented in conjunction with this description are not actual views of any particular portion of a device or component, but are merely representations employed to more clearly and fully depict the present invention.
-
FIG. 1 throughFIG. 4 illustrate deposition of a dielectric material over an intermediate semiconductor device during a desirable HDP CVD process; -
FIG. 5 andFIG. 6 illustrate the formation of a material void within a dielectric material deposited over an intermediate semiconductor device that may occur when the deposition-to-etch ratio of an HDP CVD process is increased away from an optimum value; -
FIG. 7 illustrates the clipping of device features that may occur when the deposition-to-etch ratio of an HDP CVD process is decreased away from an optimum value; -
FIG. 8 schematically illustrates a gas delivery device currently used to deliver process gas within a reaction chamber used for HDP CVD; -
FIG. 9 schematically illustrates the first embodiment of a gas delivery device of the present invention; -
FIG. 10 andFIG. 11 schematically illustrate alternative configurations of an active diffuser that may be used in each of the embodiments of the gas delivery device of the present invention; -
FIG. 12 throughFIG. 16 schematically illustrate further embodiments of the gas delivery device of the present invention; and -
FIG. 17 provides a schematic illustration of a reaction chamber of the present invention. - A first embodiment of the
gas delivery device 50 of the present invention is illustrated in drawingFIG. 9 . Thegas delivery device 50 of the first embodiment includes a plurality of gas delivery nozzles 36 a-36 h extending through thereaction chamber wall 118, a manifold 54 includinggas inlets active diffusers active diffusers gas delivery line 60. As the process gas passes through theactive diffusers gas inlets FIG. 9 ) through the plurality of gas delivery nozzles 36 a-36 h. As can also be seen in drawingFIG. 9 , theactive diffusers 58 are positioned relative to the manifold 54 and associated gas delivery nozzles 36 a-36 h such that inconsistencies in the time needed for process gas to flow from theactive diffusers 58 and through each of the gas delivery nozzles 36 a-36 h are minimized or eliminated. Furthermore, in order to facilitate production and maintenance of a consistent process gas pressure within the manifold 54, thegas delivery device 50 according to the first embodiment may include one or moremanifold partitions manifold 54. - The operation of each of the
active diffusers central controller 62, which may include, for example, a programmable computer circuit. Thecentral controller 62 is placed in communication with each of theactive diffusers suitable communication lines central controller 62 is capable of continuously monitoring the process gas pressure within or near each of theactive diffusers FIG. 9 ) placed within or near eachactive diffuser active diffusers gas delivery line 60 and into the manifold 54 until a desired minimum process gas pressure is achieved within or near eachactive diffuser active diffuser central controller 62 instructs theactive diffusers communication lines active diffuser - Because the
central controller 62 is capable of continuously monitoring the process gas pressure within or near each one of theactive diffusers active diffusers gas delivery line 60, regardless of whether such inconsistencies are expected, as in the case of a pressure build up during the initial period of a gas-on phase, or unexpected, as may occur due to malfunction or fouling of one or more components of thegas delivery device 50. Moreover, using continuously updated pressure information, thecentral controller 62 can control eachactive diffuser active diffuser active diffusers - Illustrated in drawing
FIG. 10 is anactive diffuser 58 suitable for use in any one of the embodiments of the gas delivery device of the present invention. As is illustrated in drawingFIG. 10 , eachactive diffuser 58 includes abody 70 having aninlet 72 and anoutlet 74, amodulator 78, and atransducer body 80, which prevents gas flow through theoutlet 74 when in a closed state but allows gas flow through theoutlet 74 when in an open state. In addition, eachactive diffuser 58 may optionally incorporate one or moreparticulate filters 77 or apressure sensor 76. Thepressure sensor 76, which may include any suitable pressure sensing technology, such as a known pressure transducer, continuously produces signals indicative of the process gas pressure within theactive diffuser 58. Such signals are preferably digital signals and are readable by acentral controller 62. Thecentral controller 62 may include, for example, a programmable computer circuit. The signals produced by thepressure sensor 76 are communicated to thecentral controller 62 via one or moresuitable communication lines 57, such as well-known electrical or optical communication lines. Using the signals continuously produced by thepressure sensor 76, thecentral controller 62 directs themodulator 78 to act upon thetransducer body 80 such that thetransducer body 80 alternates between closed and open states at a rate that will produce a desired dosage of process gas in the context of the sensed process gas pressure. Thecentral controller 62 is placed in communication with themodulator 78 of theactive diffuser 58 and controls themodulator 78 via one or more othersuitable communication lines 57 known in the art, such as known electrical or optical communication lines. - However, as is illustrated in drawing
FIG. 11 , anactive diffuser 58 suitable for use in the various embodiments of the gas delivery device of the present invention need not incorporate apressure sensor 76. For example, a knownpressure sensor 76 may extend through a branchedgas delivery line 60 near theinlet 72 of theactive diffuser 58. In such an embodiment, the pressure of the process gas within theactive diffuser 58 would be accurately estimated, and the function and operation of thecentral controller 62, thepressure sensor 76, and theactive diffuser 58 remain substantially the same. That is, thepressure sensor 76 continuously produces signals indicative of the process gas pressure within the branchedgas delivery line 60 near theinlet 72 of theactive diffuser 58. Alternatively, apressure sensor 76 may extend through agas outlet line 75 near theoutlet 74 of theactive diffuser 58. Thepressure sensor 76 placed near theoutlet 74 would sense the pressure produced by the process gas exiting theactive diffuser 58 and continuously produces signals indicative of the process gas pressure within thegas outlet line 75 near theoutlet 74 of theactive diffuser 58. If desired,pressure sensors 76 may be provided near theinlet 72 and theoutlet 74 of theactive diffuser 58. Regardless of the location of thepressure sensors 76, however, the signals produced by thepressure sensors 76 are communicated to and read by thecentral controller 62, and using the signals continuously produced by thepressure sensors 76, thecentral controller 62 directs the operation of theactive diffuser 58 to produce a desired dosage of process gas in light of the sensed process gas pressures. - In each of the embodiments of the gas delivery device of the present invention, at least one pressure sensor is associated with each active diffuser, as is illustrated in drawing
FIG. 10 and drawingFIG. 11 . Further, each pressure sensor included in each embodiment of the gas delivery device of the present invention is placed in communication with a central controller as illustrated in drawingFIG. 10 and drawingFIG. 11 . Placing at least one pressure sensor near or within each active diffuser enables accurate sensing of process gas pressure near or within each active diffuser, thereby enabling more precise control of each active diffuser and more accurate dosing of process gas within a reaction chamber. - Though any suitable active diffuser may be used in conjunction with the various embodiments of the gas delivery device of the present invention, piezoelectric gas valves are presently preferred. The transducer body of piezoelectric gas valves includes a piezoelectric element that responds to voltages applied by an electromagnetic modulator with precise movements that are directly proportional to the voltage applied. Thus, depending on the voltage applied, the piezoelectric member may be bent to varying degrees, resulting in varying “open” states of the piezoelectric valve. Moreover, the time required for the piezoelectric element to respond to an applied voltage is generally less than 2 milliseconds. As a consequence, a piezoelectric element may be cycled between closed and varying open states hundreds of times each second. These performance characteristics result in a valve that is not only easily and precisely controllable by a central controller, but which is also capable of consistently providing an extremely wide range of desired process gas flows even where the process gas supplied to such valves is provided at inconsistent or varying pressures.
- Piezoelectric valves and central controllers suitable for use in the various embodiments of the gas delivery device of the present invention must provide fast response times as well as reliable operation over time, and such devices are known in the art. For example, Engineering Measurements Company (“EMCO”) produces piezoelectric valves and associated control systems that provide desirable response times and long-term reliability. The piezoelectric valves and control systems produced by EMCO may be used as the active diffusers and central controller associated with each embodiment of the gas delivery device of the present invention.
- A second embodiment of the gas delivery device of the present invention is illustrated in drawing
FIG. 12 . Like the first embodiment illustrated in drawingFIG. 9 , the second embodiment of thegas delivery device 100 of the present invention includes a plurality of gas delivery nozzles 36 a-36 f which extend through thereaction chamber wall 118, a manifold 54 having a plurality of gas inlets 56 a-56 f, and a plurality ofactive diffusers 58 a-58 f, which are placed in communication with acentral controller 62 using knowncommunication lines 57 a-57 f, such as known electrical or optical communication lines. As was true in the first embodiment, theactive diffusers 58 a-58 f of the second embodiment are controlled viacommunication lines 57 a-57 f by acentral controller 62, which may include, for example, a programmable computer circuit. Moreover, the gas delivery device according to the second embodiment may include one or moremanifold partitions manifold 54. However, thegas delivery device 100 according to the second embodiment includesactive diffusers 58 a-58 f and gas inlets 56 a-56 f corresponding to each gas delivery nozzle 36 a-36 f. Such a design substantially eliminates any inconsistencies in the time required for process gas to travel from theactive diffusers 58 a-58 f and through each of the gas delivery nozzles 36 a-36 f, further assuring consistent delivery of process gas into the reaction chamber throughout a deposition process. - Additionally, the
gas delivery device 100 of the second embodiment includes a primarygas delivery line 104, aplenum 106, and secondary gas delivery lines 108 a-108 f, each servicing one of the plurality ofactive diffusers 58 a-58 f. Preferably, each of the secondary gas delivery lines 108 a-108 f is exactly the same length, thereby creating a process gas distribution system wherein the process gas travels exactly the same distance before arriving at each of theactive diffusers 58 a-58 f. Where the process gas delivered to each of the active diffusers must travel exactly the same distance, equilibration of process gas pressure at each of the active diffusers becomes less difficult. - Of course, each of the embodiments already described may be modified in harmony with the present invention. For example, a gas delivery device of the present invention may include any desirable number of primary and secondary gas delivery lines, plenums, active diffusers, communication lines, gas inlets, and gas delivery nozzles, or the gas delivery device of the present invention may include more than one manifold.
- Illustrated in
FIG. 13 is a third embodiment of thegas delivery device 110 of the present invention, which includes a plurality ofactive diffusers 58 a-58 d controlled by acentral controller 62 viasuitable communication lines 57 a-57 d, such as known electrical or optical communication lines, as well as afirst manifold 54, a plurality of gas delivery nozzles 36 a-36 h, which extend through areaction chamber wall 118 and are associated with asecond manifold 55, and a plurality of gas passageways 53 a-53 d associated with the first andsecond manifolds gas delivery device 110 illustrated in drawingFIG. 13 helps ensure that the process gas leaving each of theactive diffusers 58 a-58 d arrives at and passes through each of the gas delivery nozzles 36 a-36 h at the same time and under the same pressure, particularly where the ratio ofactive diffusers 58 a-58 d to gas delivery nozzles 36 a-36 h included in a gas delivery device of the present invention is less than one. - Alternatively, the gas delivery device of the present invention need not include a manifold at all. In a fourth embodiment of the
gas delivery device 112 of the present invention (illustrated in drawingFIG. 14 ), thegas delivery device 112 includes a primarygas delivery line 104, aplenum 106, and secondary gas delivery lines 108 a-108 d, each servicing one of a plurality ofactive diffusers 58 a-58 d, with each of theactive diffusers 58 a-58 d being placed in communication with and controlled by acentral controller 62 viasuitable communication lines 57 a-57 d, such as known electrical or optical communication lines. Thegas delivery device 112 according to the fourth embodiment also includes a plurality of tertiary gas lines 114 a-114 h extending between theactive diffusers 58 a-58 d and a plurality of gas delivery nozzles 36 a-36 h which extend through thereaction chamber wall 118. Preferably, each of the secondary gas delivery lines 108 a-108 d are of equal length and each of the tertiary gas lines 114 a-114 h are also of equal length, thereby creating a process gas distribution system wherein the process gas travels exactly the same distance before arriving at each of the gas delivery nozzles 36 a-36 h. - As is easily appreciated from drawing
FIG. 14 , upon passing through each of theactive diffusers 58 a-58 d, process gas does not enter a manifold to be distributed to each of the gas delivery nozzles 36 a-36 h. Instead, process gas passes directly from eachactive diffuser 58 a-58 d to an associated gas delivery nozzle 36 a-36 h through one of the tertiary gas lines 114 a-114 h. Such a design eliminates potential complications associated with the use of one or more manifolds, such as inconsistent process gas pressures within the manifold or inconsistencies in the time required by the process gas exiting theactive diffusers 58 a-58 d to reach each of the gas delivery nozzles 36 a-36 h. - A fifth embodiment of the
gas delivery device 120 of the present invention is illustrated in drawingFIG. 15 . The fifth embodiment of thegas delivery device 120 is similar to the fourth embodiment, in that the fifth embodiment includes a primarygas delivery line 104, aplenum 106, secondary gas delivery lines 108 a-108 c, tertiary gas lines 114 a-114 f, and a plurality of gas delivery nozzles 36 a-36 f extending through thereaction chamber wall 118. However, the fifth embodiment differs from the fourth embodiment, in that the active diffusers of the fifth embodiment are divided into a first plurality ofactive diffusers 58 a-58 c as well as a second plurality of active diffusers 124 a-124 f. Each of the secondary gas delivery lines 108 a-108 c extends between theplenum 106 and one of the first plurality ofactive diffusers 58 a-58 c, and each of the tertiary gas lines 114 a-114 f extends from one of the first plurality ofactive diffusers 58 a-58 c to one of the second plurality of active diffusers 124 a-124 f. Thus, before entering the reaction chamber, process gas passes from the primarygas delivery line 104, through theplenum 106, the secondary gas delivery lines 108 a-108 c, the first plurality ofactive diffusers 58 a-58 c, the tertiary gas lines 114 a-114 f, and the second plurality of active diffusers 124 a-124 f. - As is true of the previously described embodiments, the
active diffusers 58 a-58 c, 124 a-124 f included in the fifth embodiment of the gas delivery device of the present invention are placed in communication with thecentral controller 62 usingsuitable communication lines 57 a-57 i, such as known electrical or optical communication lines, and each of theactive diffusers 58 a-58 c, 124 a-124 f is operated under the direction of acentral controller 62 via thecommunication lines 57 a-57 i. However, because the fifth embodiment includes first and second pluralities ofactive diffusers 58 a-58 c, 124 a-124 f, thecentral controller 62 associated with the fifth embodiment may be programmed to monitor and control the first and second pluralities ofactive diffusers 58 a-58 c, 124 a-124 f to provide various performance advantages relative to those embodiments already described. - For example, the first and second plurality of
active diffusers 58 a-58 c, 124 a-124 f of the fifth embodiment may be controlled by thecentral controller 62 to provide a redundant gas delivery system. To provide a redundant gas delivery system, thecentral controller 62 monitors and controls the first plurality ofactive diffusers 58 a-58 c independently of the second plurality of active diffusers 124 a-124 f. Both thefirst plurality 58 a-58 c and the second plurality of active diffusers 124 a-124 f of the active diffusers are controlled by thecentral controller 62 to provide the rate of process gas flow desired for a particular deposition process. For example, during an initial period of a gas-on phase of a deposition process, the first plurality ofactive diffusers 58 a-58 c and the second plurality of active diffusers 124 a-124 f may remain in a closed state. As process gas flows into the secondary gas delivery lines 108 a-108 c and a desired minimum process gas pressure is achieved near or within each of the first plurality ofactive diffusers 58 a-58 c, the first plurality ofactive diffusers 58 a-58 c are then controlled by thecentral controller 62 to provide the desired process gas flow rate as if the process gas was passing directly from the first plurality ofactive diffusers 58 a-58 c, through the gas delivery nozzles 36 a-36 f and into the reaction chamber, not into the tertiary gas lines 114 a-114 f. As process gas flows from each of the first plurality ofactive diffusers 58 a-58 c and into the tertiary gas lines 114 a-114 f, the second plurality of active diffusers 124 a-124 f may remain in a closed state until a desired process gas pressure is achieved within or near each of the second plurality of active diffusers 124 a-124 f. At that time, thecentral controller 62 controls each of the second plurality of active diffusers 124 a-124 f to again provide the desired flow of process gas through each of the gas delivery nozzles 36 a-36 f and into the reaction chamber. The redundancy of such a system allows for some malfunction or error in the operation of one or more of the active diffusers included in the first and second pluralities ofactive diffusers 58 a-58 c, 124 a-124 f without compromising the desired process gas flow rate into the reaction chamber. - However, where the gas delivery device of the present invention does not include a manifold, the gas delivery system need not include tertiary gas lines. As can be seen in a sixth embodiment of the
gas delivery device 130 of the present invention (illustrated inFIG. 16 ), thegas delivery device 130 of the present invention may only include a primarygas delivery line 104, aplenum 106, secondary gas delivery lines 108 a-108 h, and a plurality ofactive diffusers 58 a-58 h associated with a plurality of gas delivery nozzles 36 a-36 h, which extend through areaction chamber wall 118. Such a design avoids the potential problems associated with a gas delivery device incorporating one or more manifolds and is simpler in construction and operation than the gas delivery devices of the fourth and fifth embodiments. - Again, the embodiments of the gas delivery device of the present invention described herein are provided for illustrative purposes only. The gas delivery device of the present invention may include any desirable number of gas delivery lines, plenums, active diffusers, gas delivery nozzles, communication lines, pressure sensors, manifolds, etc. The design of the gas delivery device of the present invention is extremely flexible and may be easily adapted by those of ordinary skill in the art to optimize process gas delivery within any desired reaction chamber.
- In each of its embodiments, however, the gas delivery device of the present invention provides significant advantages relative to those gas delivery devices currently in use in CVD deposition processes. First, due to the plurality of centrally-controlled active diffusers incorporated into each of the various embodiments, the gas delivery device of the present invention provides precise control of process gas flow within any given reaction chamber, even where inconsistent process gas pressures are experienced throughout the deposition process. Moreover, the gas delivery device alleviates or completely eliminates problems resulting from inconsistencies in the time required by process gas to reach and flow through the various gas delivery nozzles extending into a reaction chamber. Thus, the gas delivery device of the present invention provides the control necessary to enable reliable deposition of high-quality material layers within state of the art semiconductor device features having high aspect ratios and opening widths measuring much less than 0.5 μm.
- In addition, the gas delivery devices of the present invention enable the detection of line blockages or other malfunctions that occasionally occur within a gas delivery system. For example, the inside diameter of the gas delivery nozzles currently used to deliver process gas in reaction chambers is exceedingly small, and the nozzles are easily blocked, either partially or completely, by small contaminants that may be present in the process gas, or, alternatively, gas lines leading to the gas delivery nozzles may also be progressively fouled or unexpectedly blocked. Such blockages or fouling often result in back pressures, and, particularly where no manifold is included in the gas delivery device of the present invention, such back pressures will inhibit process gas from flowing through the active diffusers as expected. As process gas is inhibited from flowing from the active diffusers, the process gas pressure in the gas line preceding the active diffuser will unexpectedly build. Such an unexpected increase in pressure would be sensed by the pressure sensor incorporated in or located near the active diffuser, and the central controller may be programmed to detect such unexpected pressure changes so that any damage to the system or to the semiconductor materials being processed may be avoided or minimized. Further, the central controller associated with each embodiment of the gas delivery device of the present invention may also be programmed to detect significant decreases in process gas pressure that may occur due to a rupture, fouling, or a blockage that occurs in a gas line preceding an active diffuser.
- Also included within the scope of the present invention is a CVD chamber, a cross section of which is schematically illustrated in drawing
FIG. 17 . TheCVD chamber 148 according to the present invention includes asealable chamber 150 that may be used to enclose one ormore semiconductor wafers 152. Such sealable chambers are well known in the art. Moreover, theCVD chamber 148 of the present invention may also include various other known features necessary to carry out any desirable CVD process, such as an RF source, a heating apparatus, one or more ventilation systems, or substrate handling equipment, all of which are well known in the art. However, unlike known CVD chambers, theCVD chamber 148 of the present invention also includes agas delivery device 154 of the present invention. Though theCVD chamber 148 illustrated in drawingFIG. 17 incorporates agas delivery device 154 according to the sixth embodiment of the gas delivery device of the present invention, theCVD chamber 148 of the present invention may incorporate any embodiment of the gas delivery device of the present invention. - The present invention also includes a method of carrying out a CVD process. The method of the present invention includes providing a CVD chamber, providing a gas delivery device according to any one of the embodiments of the gas delivery device of the present invention, disposing a semiconductor substrate within the HDP CVD chamber, and introducing any suitable process gas, such as SiH4, an inert gas, an oxygen-containing gas, or a nitrogen containing gas, into the CVD chamber using the gas delivery device of the present invention. The method of the present invention is extremely flexible and is easily adapted for use in any desired CVD process, such as TE CVD, PE CVD, or HDP CVD processes.
- Again, although various embodiments of the gas delivery device, the reaction chamber and the method of carrying out a CVD process of the present invention are described and illustrated herein, the present invention is not so limited. As is easily appreciated by the description provided herein, the gas delivery device, the reaction chamber, and the method of carrying out a CVD process of the present invention are each highly flexible, and the various embodiments described herein may be easily modified in harmony with the present invention in order to suit a particular process need. Therefore, the gas delivery device, the reaction chamber, and the method of carrying out a CVD process of the present invention may be designed for use in any desirable CVD process, such as TE CVD, PE CVD, or HDP CVD processes, and the scope of these various aspects of the present invention is defined by the appended claims.
Claims (19)
1. A gas delivery device for a chamber comprising:
a gas delivery system;
a plurality of gas delivery nozzles; and
a plurality of active diffusers connected to said gas delivery system controlling the flow of gas from said gas delivery system to said plurality of gas delivery nozzles, each active diffuser of said plurality of active diffusers having a pressure sensor having a portion thereof located therein controlling each active diffuser and controlled by a central controller for providing an amount of process gas flow from said gas delivery system into said chamber through said plurality of gas delivery nozzles.
2. The gas delivery device of claim 1 , wherein said plurality of active diffusers comprises a plurality of piezoelectric valves.
3. The gas delivery device of claim 1 , wherein said central controller comprises a programmable computer circuit.
4. The gas delivery device of claim 1 , wherein said gas delivery system comprises a gas delivery line having a plurality of branches, each of said plurality of branches being associated with an active diffuser included in said plurality of active diffusers.
5. The gas delivery device of claim 1 , wherein said gas delivery system comprises:
a primary gas delivery line;
a plenum; and
a plurality of secondary gas delivery lines, each secondary gas delivery line of said plurality of secondary gas delivery lines extending between said plenum and an active diffuser included in said plurality of active diffusers.
6. The gas delivery device of claim 5 , further comprising a plurality of tertiary gas delivery lines, each tertiary gas delivery line of said plurality of tertiary gas delivery lines extending between an active diffuser included in said plurality of active diffusers and a gas delivery nozzle of said plurality of gas delivery nozzles.
7. The gas delivery device of claim 1 , wherein said plurality of active diffusers comprises a first plurality of active diffusers and a second plurality of active diffusers and said gas delivery system includes a primary gas delivery line, a plenum, a plurality of secondary gas delivery lines, each secondary gas delivery line of said plurality of secondary gas delivery lines extending between said plenum and an active diffuser of said first plurality of active diffusers and a plurality of tertiary gas delivery lines, each tertiary gas delivery line of said plurality of tertiary gas delivery lines extending between a first active diffuser of said first plurality of active diffusers and a second active diffuser of said second plurality of active diffusers.
8. The gas delivery device of claim 1 , further comprising a manifold having an outside diameter and an inside diameter, wherein said plurality of gas delivery nozzles extending into said reaction chamber extends away from said inside diameter of said manifold, and each active diffuser of said plurality of active diffusers is disposed around said outside diameter of said manifold.
9. The gas delivery device of claim 1 , further comprising:
a first manifold having a first inside diameter and a first outside diameter, each active diffuser of said plurality of active diffusers disposed around said first outside diameter and a plurality of gas passageways extending away from said first inside diameter; and
a second manifold having a second inside diameter and a second outside diameter, wherein said plurality of gas passageways extending away from said first inside diameter of said first manifold extends into said second outside diameter of said second manifold, forming sealed passageways enabling fluid communication between said first and said second manifolds and said plurality of gas delivery nozzles extends away from said second diameter of said second manifold.
10. A reaction chamber comprising:
a chamber for placing at least one semiconductor substrate therein; and
a gas delivery device comprising a gas delivery system, a plurality of gas delivery nozzles connected to said gas delivery system and circumscribing and extending into said chamber, and a plurality of active diffusers connected to said gas delivery system, each active diffuser of said plurality of active diffusers having a sensor having at least a portion thereof located therein for controlling each active diffuser, and controlled by a central controller providing a desired amount of process gas flow from said gas delivery system to said chamber through said plurality of gas delivery nozzles.
11. The reaction chamber of claim 10 , wherein said plurality of active diffusers of said gas delivery device comprises a plurality of piezoelectric valves.
12. The reaction chamber of claim 10 , wherein said central controller of said gas delivery device comprises a programmable computer circuit.
13. The reaction chamber of claim 10 , wherein said gas delivery system of said gas delivery device comprises a gas delivery line having a plurality of branches, each of said plurality of branches being associated with an active diffuser included in said plurality of active diffusers.
14. The reaction chamber of claim 10 , wherein said gas delivery system of said gas delivery device comprises:
a primary gas delivery line;
a plenum; and
a plurality of secondary gas delivery lines, each secondary gas delivery line of said plurality of secondary gas delivery lines extending between said plenum and an active diffuser included in said plurality of active diffusers.
15. The reaction chamber of claim 14 , wherein said gas delivery system of said gas delivery device further comprises a plurality of tertiary gas delivery lines, each tertiary gas delivery line of said plurality of tertiary gas delivery lines extending between an active diffuser included in said plurality of active diffusers and a gas delivery nozzle of said plurality of gas delivery nozzles.
16. The reaction chamber of claim 15 , wherein said plurality of active diffusers of said gas delivery device comprises a first plurality of active diffusers and a second plurality of active diffusers, and said gas delivery system of said gas delivery device includes a primary gas delivery line, a plenum, a plurality of secondary gas delivery lines, each secondary gas delivery line of said plurality of secondary gas delivery lines extending between said plenum and an active diffuser of said first plurality of active diffusers, and a plurality of tertiary gas delivery lines, each tertiary gas delivery line of said plurality of tertiary gas delivery lines extending between a first active diffuser of said first plurality of active diffusers and a second active diffuser of said second plurality of active diffusers.
17. The reaction chamber of claim 10 , wherein said gas delivery device further comprises a manifold having an outside diameter and on inside diameter, said plurality of gas delivery nozzles extending into said reaction chamber extends away from said inside diameter of said manifold, and each active diffuser of said plurality of active diffusers is disposed around said outside diameter of said manifold.
18. The reaction chamber of claim 10 , wherein said gas delivery device further comprises:
a first manifold having a first inside diameter and a first outside diameter, wherein each active diffuser of said plurality of active diffusers is disposed around said first outside diameter and a plurality of gas passageways extends away from said first inside diameter; and
a second manifold having a second inside diameter and a second outside diameter, wherein said plurality of gas passageways extending away from said first inside diameter of said first manifold extends into said second outside diameter of said second manifold, forming sealed passageways enabling fluid communication between said first and said second manifolds, and said plurality of gas delivery nozzles extends away from said second diameter of said second manifold.
19. A method for depositing a material over a semiconductor substrate in a chamber comprising:
providing a gas delivery device comprising a gas delivery system, a plurality of gas delivery nozzles flowing into the chamber, and a plurality of active diffusers, each active diffuser of said plurality of active diffusers being controllable by a central controller to provide an amount of process gas flow from said gas delivery system, through said plurality of gas delivery nozzles and into said chamber; and
introducing process gas within said chamber via said gas delivery device.
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US11342164B2 (en) * | 2011-12-16 | 2022-05-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | High density plasma chemical vapor deposition chamber and method of using |
US12020905B2 (en) | 2011-12-16 | 2024-06-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of using high density plasma chemical vapor deposition chamber |
US20130180954A1 (en) * | 2012-01-18 | 2013-07-18 | Applied Materials, Inc. | Multi-zone direct gas flow control of a substrate processing chamber |
US20140038421A1 (en) * | 2012-08-01 | 2014-02-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Deposition Chamber and Injector |
US11492704B2 (en) * | 2018-08-29 | 2022-11-08 | Applied Materials, Inc. | Chamber injector |
US11807931B2 (en) | 2018-08-29 | 2023-11-07 | Applied Materials, Inc. | Chamber injector |
Also Published As
Publication number | Publication date |
---|---|
US7271096B2 (en) | 2007-09-18 |
US20060065368A1 (en) | 2006-03-30 |
US20050098108A1 (en) | 2005-05-12 |
US20060252275A1 (en) | 2006-11-09 |
US6896737B1 (en) | 2005-05-24 |
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