US20040135157A1 - Combined semiconductor apparatus with semiconductor thin film - Google Patents
Combined semiconductor apparatus with semiconductor thin film Download PDFInfo
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- US20040135157A1 US20040135157A1 US10/743,104 US74310403A US2004135157A1 US 20040135157 A1 US20040135157 A1 US 20040135157A1 US 74310403 A US74310403 A US 74310403A US 2004135157 A1 US2004135157 A1 US 2004135157A1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/435—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
- B41J2/447—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources
- B41J2/45—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources using light-emitting diode [LED] or laser arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Definitions
- the present invention relates to a combined semiconductor apparatus useful in, for example, a light-emitting diode (LED) print head in an electrophotographic printer.
- LED light-emitting diode
- FIG. 26 is a perspective view schematically showing a part of a conventional LED print unit
- FIG. 27 is a plan view showing a part of an LED array chip provided to the LED print unit of FIG. 26.
- a conventional LED print unit 900 includes a circuit board 901 on which are mounted a plurality of LED array chips 902 having electrode pads 903 , and a plurality of driving integrated circuit (IC) chips 904 having electrode pads 905 .
- the electrode pads 903 and 905 are interconnected by bonding wires 906 through which current is supplied from the driving-IC chips 904 to LEDs 907 formed in the LED array chips 902 .
- Further electrode pads 909 on the driving-IC chips 904 are connected to bonding pads 910 on the circuit board 901 by further bonding wires 911 .
- the electrode pads 903 , 905 , and 909 must be comparatively large, e.g., one hundred micrometers square (100 ⁇ m ⁇ 100 ⁇ m), and the LED array chips 902 must have approximately the same thickness as the driving-IC chips 904 (typically 250-300 ⁇ m), even though the functional parts of the LED array chips 902 (the LEDs 907 ) have a depth of only about 5 ⁇ m from the surface.
- an LED array chip 902 must therefore be much larger and thicker than necessary simply to accommodate the LEDs 907 . These requirements drive up the size and material cost of the LED array chips 902 .
- the electrode pads 903 may need to be arranged in a staggered formation on each LED array chip 902 . This arrangement further increases the chip area and, by increasing the length of the path from some of the LEDs 907 to their electrode pads 903 , increases the associated voltage drop.
- the size of the driving-IC chips 904 also has to be increased to accommodate the large number of bonding pads 905 by which they are interconnected to the LED array chips 902 .
- Light-emitting elements having a thin-film structure are disclosed in Japanese Patent Laid-Open Publication No. 10-063807 (FIGS. 3-6, FIG. 8, and paragraph 0021), but these light-emitting elements have electrode pads for solder bumps through which current is supplied. An array of such light-emitting elements would occupy substantially the same area as a conventional LED array chip 902 .
- a combined semiconductor apparatus includes a semiconductor substrate having an integrated circuit, a planarized region formed in a surface of the semiconductor substrate, and a semiconductor thin film including at least one semiconductor device and bonded on the planarized region.
- a surface of the semiconductor thin film, in which the semiconductor device is formed, may be disposed on a side of the planarized region.
- the apparatus may further include a planarized film disposed between the planarized region and the semiconductor thin film.
- FIG. 1 is a perspective view schematically showing a part of an integrated LED/driving-IC chip in accordance with a first embodiment of the present invention
- FIG. 2 is a perspective view schematically showing a part of the integrated LED/driving-IC chip of the first embodiment before an LED epitaxial film is bonded;
- FIG. 3 is a plan view schematically showing a part of the integrated LED/driving-IC chip of the first embodiment
- FIG. 4 is a schematic cross sectional view showing a cross section through line S 4 -S 4 in FIG. 3;
- FIGS. 5A and 5B are schematic cross sectional views for explaining a process of forming a planarized film in the integrated LED/driving-IC chip of the first embodiment
- FIG. 6 is a plan view schematically showing a part of the integrated LED/driving-IC chip of the first embodiment after forming common interconnecting layers;
- FIG. 7 is a schematic cross sectional view for explaining a first process of fabricating an LED epitaxial film of the first embodiment
- FIG. 8 is a schematic cross sectional view for explaining a second process of fabricating the LED epitaxial film in the first embodiment
- FIG. 9 is a schematic cross sectional view for explaining a third process of fabricating the LED epitaxial-film in the first embodiment
- FIG. 10 is a schematic cross sectional view showing a cross section through line S 10 -S 10 in FIG. 9;
- FIGS. 11A to 11 D are schematic cross sectional views for explaining a process of bonding the LED epitaxial in the first embodiment
- FIG. 12 is a schematic plan view showing a part of the integrated LED/driving-IC chip in accordance with a modification of the first embodiment
- FIG. 13 is a perspective view schematically showing a part of an integrated LED/driving-IC chip in accordance with a second embodiment of the present invention.
- FIG. 14 is a schematic perspective view showing the integrated LED/driving-IC chip of the second embodiment before an LED epitaxial film is bonded;
- FIG. 15 is a schematic cross sectional view showing a cross section through line S 15 -S 15 in FIG. 13;
- FIG. 16 is a perspective view schematically showing a part of an integrated LED/driving-IC chip in accordance with a third embodiment of the present invention.
- FIG. 17 is a perspective view schematically showing the integrated LED/driving-IC chip of the third embodiment before an LED epitaxial film is bonded;
- FIG. 18 is a plan view schematically showing a part of the integrated LED/driving-IC chip of the third embodiment
- FIG. 19 is a perspective view schematically showing a part of an integrated LED/driving-IC chip in accordance with a fourth embodiment of the present invention.
- FIG. 20 is a perspective view schematically showing the integrated LED/driving-IC chip of the fourth embodiment before an LED epitaxial film is bonded;
- FIG. 21 is a plan view schematically showing a part of the integrated LED/driving-IC chip of the fourth embodiment
- FIG. 22 is a schematic cross sectional view showing a cross section through line S 22 -S 22 in FIG. 21;
- FIG. 23 is a schematic cross sectional view showing an integrated LED/driving-IC chip in accordance with a fifth embodiment of the present invention.
- FIG. 24 is a schematic cross sectional view showing an LED print head equipped with a combined semiconductor apparatus of the present invention.
- FIG. 25 is a schematic cutaway side view of an LED printer employing the invented semiconductor apparatus
- FIG. 26 is a perspective view schematically showing a part of a conventional LED print unit.
- FIG. 27 is a plan view showing a part of an LED array chip provided in the LED print unit of FIG. 26.
- FIG. 1 is a perspective view schematically showing a part of an integrated LED/driving-IC chip 100 as a combined semiconductor apparatus in accordance with a first embodiment of the present invention
- FIG. 2 is a perspective view schematically showing the integrated LED/driving-IC chip 100 before an LED epitaxial film 110 is bonded
- FIG. 3 is a plan view schematically showing a part of the integrated LED/driving-IC chip 100
- FIG. 4 is a schematic cross sectional view showing a cross section through line S 4 -S 4 in FIG. 3.
- an integrated LED/driving-IC chip 100 of the first embodiment includes a silicon (Si) substrate 101 as a semiconductor substrate which has an integrated circuit 102 and a planarized region 103 formed in a surface of the Si substrate 101 .
- the planarized region 103 is obtained by forming a dielectric layer (not shown in the figures) on the surface of the Si substrate 101 and then subjecting the surface of the Si substrate 101 to a planarizing process such as chemical mechanical polishing (CMP).
- CMP chemical mechanical polishing
- the planarized region 103 is formed on the integrated circuit 102 of the Si substrate 101 in the first embodiment, the planarized region 103 may be formed in a region of the Si substrate 101 adjacent to the integrated circuit 102 .
- the integrated LED/driving-IC chip 100 of the first embodiment also includes a planarized film 104 disposed on the planarized region 103 .
- the planarized film 104 has a metal layer 105 and an interdielectric layer 106 formed in a region peripheral to the metal layer 105 .
- An upper surface of the planarized film 104 is subjected to a planarizing process such as CMP.
- the integrated LED/driving-IC chip 100 further includes a sheet-like semiconductor epitaxial film 110 including LEDs 120 and bonded on the upper surface of the planarized film 104 .
- the planarized film 104 may be omitted and the LED epitaxial film 110 may be bonded directly on the surface of the planarized region 103 .
- the LED epitaxial film 110 is formed with a plurality of LEDs (also referred to below as light-emitting parts or regions) 120 .
- the plurality of LEDs 120 is arranged in a row at regular intervals.
- the arrangement of the LEDs 120 is not limited to the regular intervals.
- the arrangement of the LEDs 120 is not limited to a single row, but the LEDs 120 may be arranged as regularly shifted in a direction perpendicular to a direction of the arrangement of the LEDs 120 .
- number of LEDs 120 to be formed to the LED epitaxial film 110 is not limited to the illustrated number. Further, as shown in FIG.
- the LED epitaxial film 110 has a width W 1 larger than a width W 2 of the light-emitting region 120 .
- the width W 2 of the light-emitting region 120 is set to be 20 ⁇ m
- the width W 1 of the LED epitaxial film 110 is set to be 50 ⁇ m, so that a margin of 15 ⁇ m is provided to each of both sides of the light-emitting region 120 .
- the width W 1 of the LED epitaxial film 110 is much smaller than width (typically, about 400 ⁇ m) of a substrate of the conventional LED print head having electrode pads.
- the width W 1 of the LED epitaxial film 110 and the width W 2 of the light-emitting region 120 are not limited to the aforementioned values.
- the LED epitaxial film 110 will be made of only epitaxial layers to be explained later.
- the thickness of the LED epitaxial film 110 may be about 2 ⁇ m that is sufficient to secure stable characteristics (e.g., light-emitting characteristics or electrical characteristics) of the LED 120 .
- the thickness of the LED epitaxial film 110 is much smaller than the thickness (typically, about 300 ⁇ m) of the conventional LED print head. As the thickness of the LED epitaxial film 110 is increased, a disconnection due to poor step coverage tends to probably occur in the thin-film wiring layer (e.g. the layer 130 shown in FIG. 6) formed on the LED epitaxial film 110 .
- the LED epitaxial film 110 have a thickness of about 10 ⁇ m or less.
- the thickness of the LED epitaxial film 110 it is also possible to set the thickness of the LED epitaxial film 110 to exceed 10 ⁇ m.
- the Si substrate 101 is a monolithic Si substrate, in which the integrated circuit 102 is formed.
- the integrated circuit 102 includes a plurality of driving-ICs for driving the LEDs 120 formed in the LED epitaxial film 110 . Besides the driving circuits, the integrated circuit 102 includes shared circuitry for illumination control of the LEDs 120 .
- the Si substrate 101 has a thickness of about 300 ⁇ m, for example.
- the integrated circuit 102 of the Si substrate 101 has a rough or irregular surface due to the openings of the interdielectric layer, wiring pattern, etching pattern, etc.
- a dielectric layer (not shown in the figures) is formed on the irregular surface of the integrated circuit 102 and then subjected to a planarizing process such as CMP, thus forming the planarized region 103 .
- the planarized film 104 disposed on the planarized region 103 includes a plurality of the metal layers 105 formed on predetermined regions on which the LEDs 120 of the LED epitaxial film 110 are to be bonded, and the interdielectric layer 106 formed on the peripheral region of the metal layers 105 to have the same thickness as that of the metal layers 105 .
- the structure and material of the planarized film 104 are not restricted to the illustrated or above-described ones.
- the structure and material of the planarized film 104 may be determined by various factors including the structure and material of the planarized region 103 of the Si substrate 101 , and the shape, size, thickness and material of the LED epitaxial film 110 .
- FIGS. 5A and 5B are schematic cross sectional views for explaining a process of forming the planarized film 104 .
- an interconnecting layer 105 a, an interdielectric layer 106 a and a metal layer 105 b are sequentially formed on the planarized region 103 of the Si substrate 101 .
- the interdielectric layer 106 a and metal layer 105 b are subjected to a planarizing process such as CMP (Chemical Mechanical Polishing) to planarize surfaces of the metal layers 105 and interdielectric layer 106 .
- CMP Chemical Mechanical Polishing
- planarized film 104 is formed on the planarized region 103 .
- the structure of the planarized film 104 and a method of forming the planarized film 104 are not restricted to the aforementioned structure and method.
- a spin-on-glass (SOG) method which is generally used for forming a surface protective film of an IC or an LSI, may be used for forming a planarized film on the Si substrate 101 .
- the SOG method includes, for example, the steps of dropping ether-series solvent with dissolved organic silicon onto the Si substrate 101 , rotating the Si substrate 101 at a high speed to form a uniform and thin SOG film on the Si substrate 101 , and subsequently heating the Si substrate 101 at a range between 300 to 500 degrees centigrade to remelt the SOG film for a certain period for hardening the SOG film.
- the interdielectric layer 106 a is made of an insulating film such as an oxide film or a nitride film made of, e.g., SiO 2 , SiN or polyamide.
- the metal layer 105 is made of, e.g., palladium or gold or metal material including palladium and/or gold.
- the metal layer 105 may be a conduction layer of electrically conductive material (such as polysilicon) other than metal.
- flatness (which is an indicator used for indicating unevenness on the surface) of the planarized region 103 is preferably not more than 10 nanometers. The smaller the value of flatness becomes, the more preferable the planarized region 103 becomes.
- the LED epitaxial film 110 has a first surface 110 a, in which the LEDs 120 are formed, and a second surface 110 b opposed to the first surface 110 a and having a common electrode layer 116 .
- the light-emitting parts 120 are positioned in the first surface 110 a in the LED epitaxial film 110 .
- the first surface 110 a of the LED epitaxial film 110 is located on the side of the planarized region 103 .
- the LED epitaxial film 110 is bonded on the planarized film 104 in such a way that the plurality of LEDs 120 are in contact with the associated metal layers 105 .
- the integrated LED/driving-IC chip 100 has a structure in which sequentially laminated are the Si substrate 101 , the integrated circuit 102 , the planarized region 103 , the planarized film 104 , the LED epitaxial film 110 , and a common electrode layer 116 . More specifically, the planarized region 103 is formed on the integrated circuit 102 of the Si substrate 101 , the planarized film 104 is formed on the planarized region 103 , the first surface 110 a provided with the LEDs 120 is disposed on the side of the planarized region 103 in the LED epitaxial film 110 .
- the common electrode layer 116 may be made of an electrically conductive material, through which light can pass, such as a transparent oxide electrically conductive film.
- the transparent oxide electrically conductive film may be made of, e.g., indium tin oxide (ITO) or zinc oxide (ZnO).
- the LED epitaxial film 110 has a stacking layered structure of an n-type Al z Ga 1-z As layer 114 (0 ⁇ z ⁇ 1), an n-type Al y Ga 1-y As layer 113 (0 ⁇ y ⁇ 1), and an n-type Al x Ga 1-x As layer 112 (0 ⁇ x ⁇ 1), and an n-type GaAs layer 111 .
- a Zn diffusion region 115 is formed in the n-type Al y Ga 1-y As layer 113 and n-type Al z Ga 1-z As layer 114 .
- the common electrode layer 116 is formed on the n-type GaAs layer 111 .
- the thicknesses of the above layers are not limited to the above values.
- the material of the LED epitaxial film 110 may be replaced by other material such as (Al x Ga 1-x ) y In 1-y P, where 0 ⁇ x ⁇ 1 and 0 ⁇ z ⁇ 1, in this case, GaN, AlGaN, or InGaN.
- minority carriers injected through the pn junction are confined within the n-type Al y Ga 1-y As active layer 113 and the p-type Al y Ga 1-y As region created therein by zinc diffusion, so that high luminous efficiency is obtained.
- the structure shown in FIG. 4 enables high luminous efficiency to be obtained with an LED epitaxial film 110 as thin as about 2 ⁇ m.
- the LED epitaxial film 110 is not limited to thicknesses or materials given above.
- Other materials such as an aluminum-gallium indium phosphide ((Al x Ga 1-x ) y In 1-y P, where 0 ⁇ x ⁇ 1 and 0 ⁇ y ⁇ 1, a gallium nitride (GaN), an aluminum gallium nitride (AlGaN), and an indium gallium nitride (InGaN), may also be employed.
- GaN gallium nitride
- AlGaN aluminum gallium nitride
- InGaN indium gallium nitride
- a single hetero-epitaxial structure and a homo-epitaxial structure can be also applied in LEDs.
- FIG. 6 Shown in FIG. 6 is a schematic plan view of a part of the integrated LED/driving-IC chip 100 after common interconnecting layers 130 are formed.
- the common interconnecting layers 130 are electrically connected to associated common electrode terminals 107 of the integrated circuit 102 of the Si substrate 101 .
- the Zn diffusion region 115 shown in FIG. 4) is electrically connected to the metal layer or conductive layer 105 .
- the metal layer 105 is electrically connected to the integrated circuit 102 (not shown in the figure).
- the common interconnecting layer 130 is, for example, a thin metal wiring film.
- FIGS. 7 to 10 are schematic cross sectional views for explaining process of fabricating an LED epitaxial film 110 of the first embodiment. Further, FIG. 9 shows a cross section through line S 9 -S 9 in FIG. 10, and FIG. 10 shows a cross section through line S 10 -S 10 in FIG. 9.
- An LED epitaxial layer 110 c can be fabricated by the techniques such as metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). After lifting off the LED epitaxial layer 110 c, it becomes the LED epitaxial film 110 . Before fabricating the LED epitaxial layer 110 c, as shown in FIG. 7, the LED epitaxial film fabrication substrate 140 is formed.
- the fabrication substrate 140 in FIG. 7 includes a GaAs substrate 141 , a GaAs buffer layer 142 , an aluminum-gallium indium phosphide ((AlGa)InP) etching stop layer 143 , and an aluminum arsenide (AlAs) sacrificial layer 144 .
- the n-type GaAs contact layer 111 , n-type Al x Ga 1-x As lower cladding layer 112 , n-type Al y Ga 1-y As active layer 113 , and n-type Al z Ga 1-z As upper cladding layer 114 are formed in this order on the AlAs sacrificial layer 144 , creating an LED epitaxial layer 110 c.
- Lifting-off of the LED epitaxial layer 110 c can be carried out by a chemical lift off method. In this case, the (AlGa)InP etching stop layer 143 can be omitted.
- the structures of the semiconductor epitaxial layer 110 c and the fabrication substrate 140 are not limited to those shown in FIG. 7, and various modifications of the LED epitaxial layer 110 c and the fabrication substrate 140 can be made.
- a p-type impurity comprising zinc (Zn) is diffused by, for example, a solid-phase diffusion method to create the zinc diffusion regions 115 .
- the diffusion source film (not shown in the figures) used for the solid-phase diffusion process is then removed to expose the surface of the zinc diffusion regions 115 .
- the AlAs sacrificial layer 144 is selectively removed with use of a 10% HF (hydrogen fluoride) solution. Since an etching rate for the AlAs sacrificial layer 144 is much larger than an etching rate for the AlGaAs layers 112 to 114 , GaAs layers 111 , 141 , 142 , and etching stop layer 143 ; the AlAs sacrificial layer 144 can be selectively etched. As a result, the LED epitaxial layer 110 c (LED epitaxial film 110 ) can be lifted off from the LED epitaxial film fabrication substrate 140 .
- a 10% HF hydrogen fluoride
- the LED epitaxial film 110 for the purpose of making the LED epitaxial film 110 thin and also to lift off the LED epitaxial film 110 from the fabrication substrate 140 in a comparative short time, it is desirable that the LED epitaxial film 110 have a width of 300 ⁇ m or less, e.g., about 50 ⁇ m.
- the respective epitaxial layers 111 to 114 are previously etched so that trenches 145 are made therein and the layers have a width W 1 of 50 ⁇ m.
- the supporting material when the supporting material is provided on the LED epitaxial film 110 , the supporting material can be transferred to a predetermined position by sucking the surface of the supporting material for the LED epitaxial film by vacuum suction or bonding the surface of the supporting material for the LED epitaxial film by a photo-hardening adhesive sheet, which hardens and loses its adhesive property when subjected to light irradiation.
- FIGS. 11A to 11 D are schematic cross sectional views for explaining a process of bonding the LED epitaxial film 110 in the integrated LED/driving-IC chip of the first embodiment.
- the LED epitaxial film 110 (corresponding to the LED epitaxial layer 110 c in FIGS. 9 and 10 before lifting-off) is lifted from the fabrication substrate 140 and carried by a photo-hardening adhesive sheet 150 a of a first supporting material 150 , and, as shown in FIG. 11B, is bonded onto a photo-hardening adhesive sheet 160 a of a second supporting material 160 .
- the surface area of the LED epitaxial film 110 can be made small and thus the integrated LED/driving-IC chip 100 can be made small in size.
- the surface area of the LED epitaxial film 110 can be made small, its material cost can be reduced.
- the LED epitaxial film 110 is supported by the Si substrate 101 and need not be thickened to provide strength for wire bonding, it can be much thinner than a conventional LED array chip. This effect lead to a substantial reduction in material costs.
- the first surface 110 a of the LED epitaxial film 110 provided with the LEDs 120 is located on the side of the Si substrate 101 provided with the planarized region 103 and overlapped with the metal layer 105 .
- the LED epitaxial film 110 is provided on the planarized region 103 above the integrated circuit 102 , the width of the Si substrate having the integrated circuit 102 can be reduced to a large extent.
- the common interconnecting layer 131 has such a shape as to spread nearly all over the LED epitaxial film 110 other than openings 131 a on the LEDs 120 .
- a metal layer or a transparent electrode or a semi-transparent electrode can be used as the common interconnecting layer 131 . In this case, fluctuations in the potential of the common electrode layer 116 of the LED epitaxial film 110 can be made small and fluctuations in the luminous intensities of the LEDs 120 can be made small.
- FIG. 13 is a perspective view schematically showing a part of an integrated LED/driving-IC chip 200 in accordance with a second embodiment of the present invention
- FIG. 14 is a perspective view schematically showing the integrated LED/driving-IC chip 200 of the second embodiment before the LED epitaxial films 210 are bonded
- FIG. 15 is a schematic cross sectional view showing a cross section through line S 15 -S 15 in FIG. 13.
- FIG. 13 parts that are the same as or correspond to those in FIG. 1 (first embodiment) are denoted by the same reference numerals.
- FIG. 14 parts that are the same as or correspond to those in FIG. 2 (first embodiment) are denoted by the same reference numerals.
- FIG. 15 parts that are the same as or correspond to those in FIG. 4 (first embodiment) are denoted by the same reference numerals.
- An integrated LED/driving-IC chip 200 shown in FIGS. 13 and 14 is different from the integrated LED/driving-IC chip 100 of the first embodiment shown in FIGS. 1 and 2 in that a single LED epitaxial film 210 is bonded onto each metal layer 105 and that each LED epitaxial film 210 has a single LED.
- various types of structures including provision of nondoped active layer between cladding layers or insertion of a quantum-well layer between in the cladding layers can be employed.
- the LED epitaxial films 210 are divided to be small.
- a problem with the internal stress of the LED epitaxial films 210 involved when the thermal expansion coefficient of the LED epitaxial films 210 and the thermal expansion coefficient of the Si substrate 101 are largely different, can be reduced, and thus one of factors causing a defect in the LED epitaxial films 204 can be eliminated.
- the integrated LED/driving-IC chip 200 of the second embodiment can be increased in reliability.
- the second embodiment is substantially the same as the above first embodiment, except for the above-described respects.
- the integrated LED/driving-IC chip 300 also includes thin individual interconnecting layers 330 formed on a region extending from the upper surfaces of the LEDs 320 of the LED epitaxial film 310 to the upper surfaces of individual electrode terminals 308 of the integrated circuit 302 .
- Formed under the individual interconnecting lines 330 is a suitable interdielectric layer (not shown in the figures).
- the metal layer 305 is electrically connected to a common potential terminal provided on the substrate 301 .
- the third embodiment is substantially the same as the above first or second embodiment, except for the above-described respects.
- the integrated LED/driving-IC chip 400 also a sheet-like LED epitaxial film 410 including LEDs 420 and bonded on the metal layer 405 .
- the LED epitaxial film 410 has a common interconnecting layer (not shown in the figures) on a second surface 410 b of the epitaxial film opposed to a first surface 410 a, in which the LEDs 420 is formed.
- the LED epitaxial film 410 is bonded on the metal layer 405 so that the second surface 410 b is located on the side of the planarized region 403 of the Si substrate 301 .
- a plurality of metal layers may be formed so that the LEDs 420 of the first surface 410 a are placed on the metal layers respectively.
- a plurality of LED epitaxial films each having a single LED may be arranged in a row on the metal layer.
- the LED epitaxial film 410 can be bonded on the Si substrate 401 at a position higher than an irregular surface 402 a of the integrated circuit 402 of the Si substrate 401 . For this reason, such a problem that a part (e.g., a bonding collet) of a device used in the process of bonding the LED epitaxial film 410 onto the metal layer 405 abuts against the surface 402 a of an integrated circuit 502 can be avoided.
- a part e.g., a bonding collet
- the LED epitaxial film 510 can be bonded at a position higher than the irregular surface 502 a of the integrated circuit 502 of the Si substrate 501 . For this reason, a problem that a part (e.g., bonding collet) of a device used in the process of bonding the LED epitaxial film 510 onto the metal layer 505 on the raised layer 504 can be easily avoided.
- the paper 810 passes through the process units 801 , 802 , 803 , 804 in turn, traveling in each process unit between the photosensitive drum and a transfer roller 812 made of, for example, semi-conductive rubber.
- the transfer roller 812 is charged so as to create a potential difference between it and the photosensitive drum.
- the potential difference attracts the toner image from the photosensitive drum onto the paper 805 .
- a full-color image is built up on the paper 805 in four stages, the yellow process unit 801 printing a yellow image, the magenta process unit 802 a magenta image, the cyan process unit 803 a cyan image, and the black process unit 804 a black image.
- the LED heads account for a significant part of the manufacturing cost of this type of LED printer 800 .
- the present invention enables a high-quality printer to be produced at a comparatively low cost.
- the semiconductor substrate may be made of other materials such as amorphous silicon, single crystal silicon, polysilicon, compound semiconductor or organic semiconductor.
- the semiconductor device may be another light-emitting element such as a laser, a light-sensing element, a Hall element, or a piezoelectric element.
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Abstract
A combined semiconductor apparatus includes a semiconductor substrate having an integrated circuit, a planarized region formed in a surface of the semiconductor substrate, and a semiconductor thin film including at least one semiconductor device and bonded on the planarized region. A surface of the semiconductor thin film, in which the semiconductor device is formed, is disposed on a side of the planarized region. The apparatus may further include a planarized film disposed between the planarized region and the semiconductor thin film.
Description
- 1. Field of the Invention
- The present invention relates to a combined semiconductor apparatus useful in, for example, a light-emitting diode (LED) print head in an electrophotographic printer.
- 2. Description of the Related Art
- FIG. 26 is a perspective view schematically showing a part of a conventional LED print unit, and FIG. 27 is a plan view showing a part of an LED array chip provided to the LED print unit of FIG. 26. Referring to FIG. 26, a conventional
LED print unit 900 includes acircuit board 901 on which are mounted a plurality ofLED array chips 902 havingelectrode pads 903, and a plurality of driving integrated circuit (IC)chips 904 havingelectrode pads 905. Theelectrode pads bonding wires 906 through which current is supplied from the driving-IC chips 904 toLEDs 907 formed in theLED array chips 902.Further electrode pads 909 on the driving-IC chips 904 are connected tobonding pads 910 on thecircuit board 901 byfurther bonding wires 911. - For reliable wire bonding, the
electrode pads LED array chips 902 must have approximately the same thickness as the driving-IC chips 904 (typically 250-300 μm), even though the functional parts of the LED array chips 902 (the LEDs 907) have a depth of only about 5 μm from the surface. To accommodate the needs of wire bonding, anLED array chip 902 must therefore be much larger and thicker than necessary simply to accommodate theLEDs 907. These requirements drive up the size and material cost of theLED array chips 902. - As shown in plan view in FIG. 27, the
electrode pads 903 may need to be arranged in a staggered formation on eachLED array chip 902. This arrangement further increases the chip area and, by increasing the length of the path from some of theLEDs 907 to theirelectrode pads 903, increases the associated voltage drop. - The size of the driving-
IC chips 904 also has to be increased to accommodate the large number ofbonding pads 905 by which they are interconnected to theLED array chips 902. - Light-emitting elements having a thin-film structure are disclosed in Japanese Patent Laid-Open Publication No. 10-063807 (FIGS. 3-6, FIG. 8, and paragraph 0021), but these light-emitting elements have electrode pads for solder bumps through which current is supplied. An array of such light-emitting elements would occupy substantially the same area as a conventional
LED array chip 902. - It is an object of the present invention to provide a combined semiconductor apparatus with a semiconductor thin film that can reduce its size and material cost.
- According to the present invention, a combined semiconductor apparatus includes a semiconductor substrate having an integrated circuit, a planarized region formed in a surface of the semiconductor substrate, and a semiconductor thin film including at least one semiconductor device and bonded on the planarized region. A surface of the semiconductor thin film, in which the semiconductor device is formed, may be disposed on a side of the planarized region. The apparatus may further include a planarized film disposed between the planarized region and the semiconductor thin film.
- In the attached drawings:
- FIG. 1 is a perspective view schematically showing a part of an integrated LED/driving-IC chip in accordance with a first embodiment of the present invention;
- FIG. 2 is a perspective view schematically showing a part of the integrated LED/driving-IC chip of the first embodiment before an LED epitaxial film is bonded;
- FIG. 3 is a plan view schematically showing a part of the integrated LED/driving-IC chip of the first embodiment;
- FIG. 4 is a schematic cross sectional view showing a cross section through line S4-S4 in FIG. 3;
- FIGS. 5A and 5B are schematic cross sectional views for explaining a process of forming a planarized film in the integrated LED/driving-IC chip of the first embodiment;
- FIG. 6 is a plan view schematically showing a part of the integrated LED/driving-IC chip of the first embodiment after forming common interconnecting layers;
- FIG. 7 is a schematic cross sectional view for explaining a first process of fabricating an LED epitaxial film of the first embodiment;
- FIG. 8 is a schematic cross sectional view for explaining a second process of fabricating the LED epitaxial film in the first embodiment;
- FIG. 9 is a schematic cross sectional view for explaining a third process of fabricating the LED epitaxial-film in the first embodiment;
- FIG. 10 is a schematic cross sectional view showing a cross section through line S10-S10 in FIG. 9;
- FIGS. 11A to11D are schematic cross sectional views for explaining a process of bonding the LED epitaxial in the first embodiment;
- FIG. 12 is a schematic plan view showing a part of the integrated LED/driving-IC chip in accordance with a modification of the first embodiment;
- FIG. 13 is a perspective view schematically showing a part of an integrated LED/driving-IC chip in accordance with a second embodiment of the present invention;
- FIG. 14 is a schematic perspective view showing the integrated LED/driving-IC chip of the second embodiment before an LED epitaxial film is bonded;
- FIG. 15 is a schematic cross sectional view showing a cross section through line S15-S15 in FIG. 13;
- FIG. 16 is a perspective view schematically showing a part of an integrated LED/driving-IC chip in accordance with a third embodiment of the present invention;
- FIG. 17 is a perspective view schematically showing the integrated LED/driving-IC chip of the third embodiment before an LED epitaxial film is bonded;
- FIG. 18 is a plan view schematically showing a part of the integrated LED/driving-IC chip of the third embodiment;
- FIG. 19 is a perspective view schematically showing a part of an integrated LED/driving-IC chip in accordance with a fourth embodiment of the present invention;
- FIG. 20 is a perspective view schematically showing the integrated LED/driving-IC chip of the fourth embodiment before an LED epitaxial film is bonded;
- FIG. 21 is a plan view schematically showing a part of the integrated LED/driving-IC chip of the fourth embodiment;
- FIG. 22 is a schematic cross sectional view showing a cross section through line S22-S22 in FIG. 21;
- FIG. 23 is a schematic cross sectional view showing an integrated LED/driving-IC chip in accordance with a fifth embodiment of the present invention;
- FIG. 24 is a schematic cross sectional view showing an LED print head equipped with a combined semiconductor apparatus of the present invention;
- FIG. 25 is a schematic cutaway side view of an LED printer employing the invented semiconductor apparatus;
- FIG. 26 is a perspective view schematically showing a part of a conventional LED print unit; and
- FIG. 27 is a plan view showing a part of an LED array chip provided in the LED print unit of FIG. 26.
- Embodiments of the invention will now be described with reference to the attached drawings, in which like elements are indicated by like reference characters.
- FIG. 1 is a perspective view schematically showing a part of an integrated LED/driving-
IC chip 100 as a combined semiconductor apparatus in accordance with a first embodiment of the present invention, and FIG. 2 is a perspective view schematically showing the integrated LED/driving-IC chip 100 before an LEDepitaxial film 110 is bonded. FIG. 3 is a plan view schematically showing a part of the integrated LED/driving-IC chip 100, and FIG. 4 is a schematic cross sectional view showing a cross section through line S4-S4 in FIG. 3. - As shown in FIGS.1 to 4, an integrated LED/driving-
IC chip 100 of the first embodiment includes a silicon (Si)substrate 101 as a semiconductor substrate which has anintegrated circuit 102 and aplanarized region 103 formed in a surface of theSi substrate 101. Theplanarized region 103 is obtained by forming a dielectric layer (not shown in the figures) on the surface of theSi substrate 101 and then subjecting the surface of theSi substrate 101 to a planarizing process such as chemical mechanical polishing (CMP). Although theplanarized region 103 is formed on theintegrated circuit 102 of theSi substrate 101 in the first embodiment, theplanarized region 103 may be formed in a region of theSi substrate 101 adjacent to theintegrated circuit 102. - As shown in FIGS.1 to 4, further, the integrated LED/driving-
IC chip 100 of the first embodiment also includes aplanarized film 104 disposed on theplanarized region 103. Theplanarized film 104 has ametal layer 105 and aninterdielectric layer 106 formed in a region peripheral to themetal layer 105. An upper surface of the planarizedfilm 104 is subjected to a planarizing process such as CMP. - As shown in FIGS.1 to 4, the integrated LED/driving-
IC chip 100 further includes a sheet-likesemiconductor epitaxial film 110 includingLEDs 120 and bonded on the upper surface of theplanarized film 104. In this connection, theplanarized film 104 may be omitted and theLED epitaxial film 110 may be bonded directly on the surface of theplanarized region 103. - The
LED epitaxial film 110 is formed with a plurality of LEDs (also referred to below as light-emitting parts or regions) 120. The plurality ofLEDs 120 is arranged in a row at regular intervals. However, the arrangement of theLEDs 120 is not limited to the regular intervals. Further, the arrangement of theLEDs 120 is not limited to a single row, but theLEDs 120 may be arranged as regularly shifted in a direction perpendicular to a direction of the arrangement of theLEDs 120. Furthermore, number ofLEDs 120 to be formed to theLED epitaxial film 110 is not limited to the illustrated number. Further, as shown in FIG. 3, theLED epitaxial film 110 has a width W1 larger than a width W2 of the light-emittingregion 120. For example, the width W2 of the light-emittingregion 120 is set to be 20 μm, and the width W1 of theLED epitaxial film 110 is set to be 50 μm, so that a margin of 15 μm is provided to each of both sides of the light-emittingregion 120. The width W1 of theLED epitaxial film 110 is much smaller than width (typically, about 400 μm) of a substrate of the conventional LED print head having electrode pads. However, the width W1 of theLED epitaxial film 110 and the width W2 of the light-emittingregion 120 are not limited to the aforementioned values. - It is desirable that the
LED epitaxial film 110 will be made of only epitaxial layers to be explained later. The thickness of theLED epitaxial film 110 may be about 2 μm that is sufficient to secure stable characteristics (e.g., light-emitting characteristics or electrical characteristics) of theLED 120. The thickness of theLED epitaxial film 110 is much smaller than the thickness (typically, about 300 μm) of the conventional LED print head. As the thickness of theLED epitaxial film 110 is increased, a disconnection due to poor step coverage tends to probably occur in the thin-film wiring layer (e.g. thelayer 130 shown in FIG. 6) formed on theLED epitaxial film 110. In order to avoid occurrence of the disconnection, it is desirable that theLED epitaxial film 110 have a thickness of about 10 μm or less. In this connection, by taking measures, e.g., to planarize the stepped zone with use of insulating material such as polyimide, it is also possible to set the thickness of theLED epitaxial film 110 to exceed 10 μm. - The
Si substrate 101 is a monolithic Si substrate, in which theintegrated circuit 102 is formed. Theintegrated circuit 102 includes a plurality of driving-ICs for driving theLEDs 120 formed in theLED epitaxial film 110. Besides the driving circuits, theintegrated circuit 102 includes shared circuitry for illumination control of theLEDs 120. TheSi substrate 101 has a thickness of about 300 μm, for example. Theintegrated circuit 102 of theSi substrate 101 has a rough or irregular surface due to the openings of the interdielectric layer, wiring pattern, etching pattern, etc. A dielectric layer (not shown in the figures) is formed on the irregular surface of theintegrated circuit 102 and then subjected to a planarizing process such as CMP, thus forming theplanarized region 103. - The
planarized film 104 disposed on theplanarized region 103 includes a plurality of the metal layers 105 formed on predetermined regions on which theLEDs 120 of theLED epitaxial film 110 are to be bonded, and theinterdielectric layer 106 formed on the peripheral region of the metal layers 105 to have the same thickness as that of the metal layers 105. However, the structure and material of theplanarized film 104 are not restricted to the illustrated or above-described ones. The structure and material of theplanarized film 104 may be determined by various factors including the structure and material of theplanarized region 103 of theSi substrate 101, and the shape, size, thickness and material of theLED epitaxial film 110. - FIGS. 5A and 5B are schematic cross sectional views for explaining a process of forming the
planarized film 104. When forming theplanarized film 104, as shown in FIG. 5A, an interconnectinglayer 105 a, aninterdielectric layer 106 a and ametal layer 105 b are sequentially formed on theplanarized region 103 of theSi substrate 101. Next, as shown in FIG. 5B, theinterdielectric layer 106 a andmetal layer 105 b are subjected to a planarizing process such as CMP (Chemical Mechanical Polishing) to planarize surfaces of the metal layers 105 andinterdielectric layer 106. In this way, theplanarized film 104 is formed on theplanarized region 103. However, the structure of theplanarized film 104 and a method of forming theplanarized film 104 are not restricted to the aforementioned structure and method. Instead of the aforementioned planarizing method, a spin-on-glass (SOG) method, which is generally used for forming a surface protective film of an IC or an LSI, may be used for forming a planarized film on theSi substrate 101. The SOG method includes, for example, the steps of dropping ether-series solvent with dissolved organic silicon onto theSi substrate 101, rotating theSi substrate 101 at a high speed to form a uniform and thin SOG film on theSi substrate 101, and subsequently heating theSi substrate 101 at a range between 300 to 500 degrees centigrade to remelt the SOG film for a certain period for hardening the SOG film. In the illustrated example, theinterdielectric layer 106 a is made of an insulating film such as an oxide film or a nitride film made of, e.g., SiO2, SiN or polyamide. Themetal layer 105 is made of, e.g., palladium or gold or metal material including palladium and/or gold. Themetal layer 105 may be a conduction layer of electrically conductive material (such as polysilicon) other than metal. Furthermore, flatness (which is an indicator used for indicating unevenness on the surface) of theplanarized region 103 is preferably not more than 10 nanometers. The smaller the value of flatness becomes, the more preferable theplanarized region 103 becomes. - As shown in FIG. 2 or4, the
LED epitaxial film 110 has afirst surface 110 a, in which theLEDs 120 are formed, and asecond surface 110 b opposed to thefirst surface 110 a and having acommon electrode layer 116. In other words, the light-emittingparts 120 are positioned in thefirst surface 110 a in theLED epitaxial film 110. In the first embodiment, thefirst surface 110 a of theLED epitaxial film 110 is located on the side of theplanarized region 103. As shown in FIG. 2, theLED epitaxial film 110 is bonded on theplanarized film 104 in such a way that the plurality ofLEDs 120 are in contact with the associated metal layers 105. - Next, cross sectional structure of the integrated LED/driving-
IC chip 100 will be described. As shown in FIG. 4, the integrated LED/driving-IC chip 100 has a structure in which sequentially laminated are theSi substrate 101, theintegrated circuit 102, theplanarized region 103, theplanarized film 104, theLED epitaxial film 110, and acommon electrode layer 116. More specifically, theplanarized region 103 is formed on theintegrated circuit 102 of theSi substrate 101, theplanarized film 104 is formed on theplanarized region 103, thefirst surface 110 a provided with theLEDs 120 is disposed on the side of theplanarized region 103 in theLED epitaxial film 110. Thecommon electrode layer 116 may be made of an electrically conductive material, through which light can pass, such as a transparent oxide electrically conductive film. The transparent oxide electrically conductive film may be made of, e.g., indium tin oxide (ITO) or zinc oxide (ZnO). - As shown in FIG. 4, the
LED epitaxial film 110 has a stacking layered structure of an n-type AlzGa1-zAs layer 114 (0≦z≦1), an n-type AlyGa1-yAs layer 113 (0≦y≦1), and an n-type AlxGa1-xAs layer 112 (0≦x≦1), and an n-type GaAs layer 111. AZn diffusion region 115 is formed in the n-type AlyGa1-yAslayer 113 and n-type AlzGa1-zAslayer 114. Thecommon electrode layer 116 is formed on the n-type GaAs layer 111. - The n-
type GaAs layer 111 has a thickness of about 10 nm (=0.01 μm), the n-type AlxGa1-xAslayer 112 has a thickness of about 0.5 μm, the n-type AlyGa1-yAslayer 113 has a thickness of about 1 μm, and the n-type AlzGa1-zAslayer 114 has a thickness of about 0.5 μm. In this case, the thickness of theLED epitaxial film 110 becomes about 2 μm. However, the thicknesses of the above layers are not limited to the above values. Further, the material of theLED epitaxial film 110 may be replaced by other material such as (AlxGa1-x)yIn1-yP, where 0≦x≦1 and 0≦z≦1, in this case, GaN, AlGaN, or InGaN. - The aluminum composition ratios x, y, z of the AlGaAs layers are preferably selected so that x>y and z>y (e.g., x=z=0.4, y=0.1), and the diffusion front of the
zinc diffusion region 115 is preferably located within the n-type AlyGa1-yAs active layer active 113. In this structure, minority carriers injected through the pn junction are confined within the n-type AlyGa1-yAsactive layer 113 and the p-type AlyGa1-yAs region created therein by zinc diffusion, so that high luminous efficiency is obtained. The structure shown in FIG. 4 enables high luminous efficiency to be obtained with anLED epitaxial film 110 as thin as about 2 μm. - The
LED epitaxial film 110 is not limited to thicknesses or materials given above. Other materials, such as an aluminum-gallium indium phosphide ((AlxGa1-x)yIn1-yP, where 0≦x≦1 and 0≦y≦1, a gallium nitride (GaN), an aluminum gallium nitride (AlGaN), and an indium gallium nitride (InGaN), may also be employed. Other than a double hetero-epitaxial structure described in FIG. 4, a single hetero-epitaxial structure and a homo-epitaxial structure can be also applied in LEDs. - Shown in FIG. 6 is a schematic plan view of a part of the integrated LED/driving-
IC chip 100 after common interconnectinglayers 130 are formed. Thecommon interconnecting layers 130 are electrically connected to associatedcommon electrode terminals 107 of theintegrated circuit 102 of theSi substrate 101. TheZn diffusion region 115 shown in FIG. 4) is electrically connected to the metal layer orconductive layer 105. Themetal layer 105 is electrically connected to the integrated circuit 102 (not shown in the figure). Thecommon interconnecting layer 130 is, for example, a thin metal wiring film. Specific examples of suitable films of the individual interconnectinglayers 130 include (1) a film containing gold (Au), e.g., a single-layer gold film, a multi-layer film with titanium, platinum, and gold layers (a Ti/Pt/Au film), a multi-layer film with gold and zinc layers (an Au/Zn film), or a multi-layer film with a gold layer and a gold-germanium-nickel layer (an AuGeNi/Au film); (2) a film containing palladium (Pd), e.g., a single-layer palladium film or a multi-layer film with palladium and gold layers (a Pd/Au film); (3) a film containing aluminum (Al), e.g., a single-layer aluminum film or a multi-layer film with aluminum and nickel layers (an Al/Ni film); (4) a polycrystalline silicon (polysilicon) film; (5) a thin, electrically conductive oxide film such as an indium tin oxide (ITO) film or a zinc oxide (ZnO) film. Thecommon interconnecting layer 130 may be formed by photolithography. - An interdielectric thin film (not shown in the figures) is provided in a region where electric short-circuiting should be avoided, for example, between the
common interconnecting layer 130 and top- and side-surface of the LEDepitaxial films 110, between thecommon interconnecting layer 130 and the integrated circuit, or the like, thereby securing normal operation. Thecommon interconnecting layer 130 must cross steps, such as the step at the edge of theLED epitaxial film 110 or theintegrated circuit 102 area. To prevent short- and open-circuit faults in the common interconnectinglayers 130 at the steps, the interlayer dielectric film is preferably formed by a method such as a plasma chemical vapor deposition (P-CVD) method that provides good step coverage. The steps may also be planarized with a polyimide film, a spin-on-glass film, or other interdielectric thin film (e.g., silicon oxide or silicon nitride). - Next, a fabrication process for the
LED epitaxial film 110 will be described with reference to FIGS. 7 to 10, which are schematic cross sectional views for explaining process of fabricating anLED epitaxial film 110 of the first embodiment. Further, FIG. 9 shows a cross section through line S9-S9 in FIG. 10, and FIG. 10 shows a cross section through line S10-S10 in FIG. 9. - An
LED epitaxial layer 110 c can be fabricated by the techniques such as metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). After lifting off theLED epitaxial layer 110 c, it becomes theLED epitaxial film 110. Before fabricating theLED epitaxial layer 110 c, as shown in FIG. 7, the LED epitaxialfilm fabrication substrate 140 is formed. Thefabrication substrate 140 in FIG. 7 includes aGaAs substrate 141, aGaAs buffer layer 142, an aluminum-gallium indium phosphide ((AlGa)InP)etching stop layer 143, and an aluminum arsenide (AlAs)sacrificial layer 144. The n-typeGaAs contact layer 111, n-type AlxGa1-xAslower cladding layer 112, n-type AlyGa1-yAsactive layer 113, and n-type AlzGa1-zAsupper cladding layer 114 are formed in this order on the AlAssacrificial layer 144, creating anLED epitaxial layer 110 c. Lifting-off of theLED epitaxial layer 110 c can be carried out by a chemical lift off method. In this case, the (AlGa)InPetching stop layer 143 can be omitted. Further, the structures of thesemiconductor epitaxial layer 110 c and thefabrication substrate 140 are not limited to those shown in FIG. 7, and various modifications of theLED epitaxial layer 110 c and thefabrication substrate 140 can be made. - Referring to FIG. 8, a p-type impurity comprising zinc (Zn) is diffused by, for example, a solid-phase diffusion method to create the
zinc diffusion regions 115. The diffusion source film (not shown in the figures) used for the solid-phase diffusion process is then removed to expose the surface of thezinc diffusion regions 115. - As shown in FIGS. 9 and 10, the AlAs
sacrificial layer 144 is selectively removed with use of a 10% HF (hydrogen fluoride) solution. Since an etching rate for the AlAssacrificial layer 144 is much larger than an etching rate for the AlGaAs layers 112 to 114, GaAs layers 111, 141, 142, andetching stop layer 143; the AlAssacrificial layer 144 can be selectively etched. As a result, theLED epitaxial layer 110 c (LED epitaxial film 110) can be lifted off from the LED epitaxialfilm fabrication substrate 140. - In this connection, for the purpose of making the
LED epitaxial film 110 thin and also to lift off theLED epitaxial film 110 from thefabrication substrate 140 in a comparative short time, it is desirable that theLED epitaxial film 110 have a width of 300 μm or less, e.g., about 50 μm. To this end, as shown in FIG. 10, the respectiveepitaxial layers 111 to 114 are previously etched so thattrenches 145 are made therein and the layers have a width W1 of 50 μm. The formation of thetrenches 145 are carried out by photolithography for masking the epitaxial layers with use of resist for the trench formation and etching the epitaxial layers using a phosphate peroxide etchant (i.e., a solution of phosphoric acid and hydrogen peroxide). For simplicity, only onetrench 145 is shown in FIG. 10. The phosphate peroxide etchant etches the AlGaAs layers 112 to 114 andGaAs layers etching stop layer 143 is low, thetrench 145 formed from the upper surface can be prevented from arriving at theGaAs substrate 141 during the etching. After thetrench 145 is formed, the AlAssacrificial layer 144 is etched using the HF solution and then theLED epitaxial film 110 is lifted off. Although the AlAssacrificial layer 144 is illustrated as still remain (as etched halfway) in FIG. 10, the AlAssacrificial layer 144 is completely removed in such a condition as to carry theLED epitaxial film 110. After the AlAssacrificial layer 144 has been completely removed by etching, theLED epitaxial film 110 is immersed in deionized water so that no etching solution residue remains. When lifting off theLED epitaxial film 110, a supporting material for carrying and protecting the LED epitaxial film can be provided on theLED epitaxial film 110. For example, when the supporting material is provided on theLED epitaxial film 110, the supporting material can be transferred to a predetermined position by sucking the surface of the supporting material for the LED epitaxial film by vacuum suction or bonding the surface of the supporting material for the LED epitaxial film by a photo-hardening adhesive sheet, which hardens and loses its adhesive property when subjected to light irradiation. - FIGS. 11A to11D are schematic cross sectional views for explaining a process of bonding the
LED epitaxial film 110 in the integrated LED/driving-IC chip of the first embodiment. As shown in FIG. 11A, the LED epitaxial film 110 (corresponding to theLED epitaxial layer 110 c in FIGS. 9 and 10 before lifting-off) is lifted from thefabrication substrate 140 and carried by a photo-hardeningadhesive sheet 150 a of a first supportingmaterial 150, and, as shown in FIG. 11B, is bonded onto a photo-hardeningadhesive sheet 160 a of a second supportingmaterial 160. Next, light irradiation such as UV irradiation on the photo-hardeningadhesive sheet 150 a of the first supportingmaterial 150 causes thesheet 150 a to lose its adhesive property. Thereafter, the second supportingmaterial 160 is located upside down so that theLED epitaxial film 110 is at a lower position as shown in FIG. 11D. In this condition, theLED epitaxial film 110 is bonded onto the planarized region 103 (or onto theplanarized film 104 formed on the planarized region 103) of theSi substrate 101, and then subjected to light irradiation (e.g., UV irradiation) to lose the adhesive property of the photo-hardeningadhesive sheet 160 a of the second supportingmaterial 160 and to lift the second supportingmaterial 160 therefrom. - As mentioned above, the integrated LED/driving-
IC chip 100 of the first embodiment is arranged so that theplanarized region 103 is formed on the surface of theintegrated circuit 102 of theSi substrate 101, theplanarized film 104 is formed on theplanarized region 103, and theLED epitaxial film 110 is bonded onto theplanarized film 104. As a result, the need for providing the wire bond electrode pad for wire bonding to theLED epitaxial film 110 can be eliminated. In the integrated LED/driving-IC chip 100 of the first embodiment, further, since thecommon interconnecting layer 130 is formed as a thin film by photolithography, the need for providing the wire bond electrode pad for the common electrode to theLED epitaxial film 110 can also be eliminated. As a result, the surface area of theLED epitaxial film 110 can be made small and thus the integrated LED/driving-IC chip 100 can be made small in size. In addition, since the surface area of theLED epitaxial film 110 can be made small, its material cost can be reduced. - In the integrated LED/driving-
IC chip 100 of the first embodiment, since theLED epitaxial film 110 is supported by theSi substrate 101 and need not be thickened to provide strength for wire bonding, it can be much thinner than a conventional LED array chip. This effect lead to a substantial reduction in material costs. - In the integrated LED/driving-
IC chip 100 of the first embodiment, further, thefirst surface 110 a of theLED epitaxial film 110 provided with theLEDs 120 is located on the side of theSi substrate 101 provided with theplanarized region 103 and overlapped with themetal layer 105. Thus the need for providing individual interconnecting lines for connection of theLEDs 120 to theintegrated circuit 102 can be eliminated and the arrangement and fabricating process can be simplified. - In the integrated LED/driving-
IC chip 100 of the first embodiment, furthermore, since theLED epitaxial film 110 is provided on theplanarized region 103 above theintegrated circuit 102, the width of the Si substrate having the integratedcircuit 102 can be reduced to a large extent. - In the integrated LED/driving-
IC chip 100 of the first embodiment, in addition, since the plurality of common interconnectinglayers 130 are arranged at regular intervals in a direction of a row of the LEDs, fluctuations in the potential of thecommon electrode layer 116 of theLED epitaxial film 110 can be made small and fluctuations in the luminous intensity of theLEDs 120 can be made small. - FIG. 12 is a cross sectional view schematically showing an integrated LED/driving-
IC chip 170 as a combined semiconductor apparatus in accordance with a modification of the first embodiment of the present invention. In FIG. 12, parts that are the same as or correspond to those in FIG. 6 (first embodiment) are denoted by the same reference numerals. The integrated LED/driving-IC chip 170 shown in FIG. 12 is different from that shown in FIG. 6 in that the shape of acommon interconnecting layer 131 is different from that of thecommon interconnecting layer 130 in FIG. 6. In the integrated LED/driving-IC chip 170 shown in FIG. 12, thecommon interconnecting layer 131 has such a shape as to spread nearly all over theLED epitaxial film 110 other thanopenings 131 a on theLEDs 120. As thecommon interconnecting layer 131, a metal layer or a transparent electrode or a semi-transparent electrode can be used. In this case, fluctuations in the potential of thecommon electrode layer 116 of theLED epitaxial film 110 can be made small and fluctuations in the luminous intensities of theLEDs 120 can be made small. - FIG. 13 is a perspective view schematically showing a part of an integrated LED/driving-
IC chip 200 in accordance with a second embodiment of the present invention, and FIG. 14 is a perspective view schematically showing the integrated LED/driving-IC chip 200 of the second embodiment before the LEDepitaxial films 210 are bonded. FIG. 15 is a schematic cross sectional view showing a cross section through line S15-S15 in FIG. 13. - In FIG. 13, parts that are the same as or correspond to those in FIG. 1 (first embodiment) are denoted by the same reference numerals. In FIG. 14, parts that are the same as or correspond to those in FIG. 2 (first embodiment) are denoted by the same reference numerals. In FIG. 15, parts that are the same as or correspond to those in FIG. 4 (first embodiment) are denoted by the same reference numerals. An integrated LED/driving-
IC chip 200 shown in FIGS. 13 and 14 is different from the integrated LED/driving-IC chip 100 of the first embodiment shown in FIGS. 1 and 2 in that a singleLED epitaxial film 210 is bonded onto eachmetal layer 105 and that eachLED epitaxial film 210 has a single LED. - As shown in FIG. 15, the
LED epitaxial film 210 has a stacking layered structure in which a p-type AlxGa1-xAslayer 214, a p-type AlyGa1-yAslayer 213, an n-type AlzGa1-zAslayer 212 and an n-type GaAs layer 211 are sequentially grown on a p-type GaAs layer 215. When fabricating theLED epitaxial film 210, similarly to the first embodiment, the n-type GaAs layer 211, n-type AlzGa1-zAslayer 212, p-type AlyGa1-yAslayer 213, p-type AlxGa1-xAslayer 214 and p-type GaAs layer 215 are sequentially formed on an LED epitaxial film fabrication substrate. When bonding theLED epitaxial film 210, similarly to the first embodiment, theLED epitaxial film 210 is lifted off from the LED epitaxial film fabrication substrate, afirst surface 210 a of theLED epitaxial film 210 provided with the LEDs is located upside down so that thefirst surface 210 a is located on the side of theplanarized region 103, and theLED epitaxial film 210 is bonded onto the metal layers 105 on theSi substrate 101. Thereafter, acommon interconnecting layer 230 having an opening 230 a is formed. Similarly to thecommon interconnecting layer 130 in the first embodiment, thecommon interconnecting layer 230 is a thin interconnecting layer which extends from the surface of the common electrode area of theLED epitaxial film 210 to the surface of the common electrode terminal of theintegrated circuit 102. The composition of each of the above layers can be set to satisfy a relation of x>y and z>y (e.g., x=z=0.4 and y=0.1). However, the structure and composition of theLED epitaxial film 210 are not limited to such those as mentioned above. The LED shown in FIG. 15 has a double hetero-junction structure, but it is also possible to fabricate LEDs with a single hetero-junction structure or a homojunction structure. Further, various types of structures including provision of nondoped active layer between cladding layers or insertion of a quantum-well layer between in the cladding layers can be employed. Such a modification as a p-type layer as the upper layer and an n-type layer as the lower layer is also possible. - As has been explained above, in the integrated LED/driving-
IC chip 200 of the second embodiment, the LEDepitaxial films 210 are divided to be small. As a result, a problem with the internal stress of the LEDepitaxial films 210 involved when the thermal expansion coefficient of the LEDepitaxial films 210 and the thermal expansion coefficient of theSi substrate 101 are largely different, can be reduced, and thus one of factors causing a defect in the LED epitaxial films 204 can be eliminated. For this reason, the integrated LED/driving-IC chip 200 of the second embodiment can be increased in reliability. - In the integrated LED/driving-
IC chip 200 of the second embodiment, furthermore, the LEDepitaxial films 210 are divided to be small and the bonding area is small. Thus a process of tightly bonding the LEDepitaxial films 210 to the metal layers 105 can be facilitated, and therefore a defect generation rate caused by incomplete adhesion can be decreased. - In the integrated LED/driving-
IC chip 200 of the second embodiment, further, since theLED epitaxial film 210 has only light-emitting regions, the width of theLED epitaxial film 210 can be made small and the length of the common interconnecting layer can be made short. - The second embodiment is substantially the same as the above first embodiment, except for the above-described respects.
- FIG. 16 is a perspective view schematically showing a part of an integrated LED/driving-
IC chip 300 in accordance with a third embodiment of the present invention, and FIG. 17 is a perspective view schematically showing the integrated LED/driving-IC chip 300 before anLED epitaxial film 310 is bonded. Further, FIG. 18 is a plan view schematically showing a part of the integrated LED/driving-IC chip 300. - As shown in FIGS.16 to 18, an integrated LED/driving-
IC chip 300 of the third embodiment includes anSi substrate 301 having anintegrated circuit 302, aplanarized region 303 formed in a surface of theSi substrate 301, and aplanarized film 304 formed on theplanarized region 303. Theplanarized region 303 is obtained by forming a dielectric layer (not shown in the figures) on theSi substrate 301 and subjecting the surface of theSi substrate 301 formed with the dielectric layer to a planarizing process such as CMP. Although theplanarized region 303 is formed in a surface of theintegrated circuit 302 of theSi substrate 301 in the third embodiment, the planarized region may be formed in a region of theSi substrate 301 adjacent to theintegrated circuit 302. Further, theplanarized film 304 in the third embodiment is ametal layer 305. - As shown in FIGS.16 to 18, the integrated LED/driving-IC chip 300 a sheet-like
LED epitaxial film 310 including theLEDs 320 and bonded on theplanarized film 304. TheLED epitaxial film 310 has a common interconnecting layer (not shown in FIGS. 16 to 18) on asecond surface 310 b of theLED epitaxial film 310 opposed to afirst surface 310 a, in which theLEDs 320 are formed. Thesecond surface 310 b of theLED epitaxial film 310 is positioned on the side of theplanarized region 303 of theSi substrate 301 and bonded on themetal layer 305. In this connection, theplanarized film 304 as themetal layer 305 may not be provided on theplanarized region 303 of theSi substrate 301, and theLED epitaxial film 310 may be bonded directly on the surface (e.g., electrode area) of theplanarized region 303 of theSi substrate 301. - As shown in FIGS.16 to 18, the integrated LED/driving-
IC chip 300 also includes thin individual interconnecting layers 330 formed on a region extending from the upper surfaces of theLEDs 320 of theLED epitaxial film 310 to the upper surfaces ofindividual electrode terminals 308 of theintegrated circuit 302. Formed under the individual interconnectinglines 330 is a suitable interdielectric layer (not shown in the figures). Themetal layer 305 is electrically connected to a common potential terminal provided on thesubstrate 301. - As has been explained above, in the integrated LED/driving-
IC chip 300 of the third embodiment, since thesecond surface 310 b of theLED epitaxial film 310 is bonded on themetal layer 305, a strong adhesion strength can be obtained. - The third embodiment is substantially the same as the above first or second embodiment, except for the above-described respects.
- FIG. 19 is a perspective view schematically showing a part of an integrated LED/driving-
IC chip 400 in accordance with a fourth embodiment of the present invention, and FIG. 20 is a perspective view schematically showing the integrated LED/driving-IC chip 400 before anLED epitaxial film 410 is bonded. FIG. 21 is a plan view schematically showing a part of the integrated LED/driving-IC chip 400, and FIG. 22 is a cross sectional view showing a cross section through line S22-S22 in FIG. 21. - As shown in FIGS.19 to 21, an integrated LED/driving-
IC chip 400 of the fourth embodiment includes anSi substrate 401 having anintegrated circuit 402, aplanarized region 403 formed in (or on) a surface of theSi substrate 401, and ametal layer 405 as a planarized film formed on theplanarized region 403. Theplanarized region 403 is obtained by forming a dielectric layer (not shown in the figures) on the surface of theSi substrate 401 and subjecting the surface of theSi substrate 401 having the dielectric layer to a planarizing process such as CMP. In the fourth embodiment, theplanarized region 403 is formed on theintegrated circuit 402 of theSi substrate 401 and on aregion 403 a adjacent to theintegrated circuit 402. Themetal layer 405 is formed on theregion 403 a adjacent to a region where the integrated circuit is formed, and anLED epitaxial film 410 is bonded on the surface of themetal layer 405. - As shown in FIGS.19 to 21, the integrated LED/driving-
IC chip 400 also a sheet-likeLED epitaxial film 410 includingLEDs 420 and bonded on themetal layer 405. TheLED epitaxial film 410 has a common interconnecting layer (not shown in the figures) on asecond surface 410 b of the epitaxial film opposed to afirst surface 410 a, in which theLEDs 420 is formed. TheLED epitaxial film 410 is bonded on themetal layer 405 so that thesecond surface 410 b is located on the side of theplanarized region 403 of theSi substrate 301. In this connection, similarly to the first embodiment, a plurality of metal layers may be formed so that theLEDs 420 of thefirst surface 410 a are placed on the metal layers respectively. Similarly to the second embodiment, further, a plurality of LED epitaxial films each having a single LED may be arranged in a row on the metal layer. Furthermore, it is also possible not to provide themetal layer 405 and to bond theLED epitaxial film 410 directly on the surface (e.g., electrode area) of theregion 403 a of theSi substrate 401. - As shown in FIGS.19 to 21, the integrated LED/driving-
IC chip 400 also includes thin individual interconnecting layers 430 formed on a region extending from the upper surfaces of theLEDs 420 of theLED epitaxial film 410 to the upper surfaces ofindividual electrode terminals 408 of theintegrated circuit 402. A suitable interdielectric layer (not shown in the figures) is provided under the thin individual interconnecting layers 430 (e.g., between the interconnecting layers and metal layer 405). Themetal layer 405 is electrically connected to a common potential (e.g., ground potential) terminal provided on thesubstrate 401. - As has been explained above, in the integrated LED/driving-
IC chip 400 of the fourth embodiment, theLED epitaxial film 410 can be bonded on theSi substrate 401 at a position higher than anirregular surface 402 a of theintegrated circuit 402 of theSi substrate 401. For this reason, such a problem that a part (e.g., a bonding collet) of a device used in the process of bonding theLED epitaxial film 410 onto themetal layer 405 abuts against thesurface 402 a of anintegrated circuit 502 can be avoided. - The fourth embodiment is substantially the same as the above first to third embodiments, except for the above-described respects.
- FIG. 23 is a cross sectional view schematically showing an integrated LED/driving-
IC chip 500 in accordance with a fifth embodiment of the present invention. - The integrated LED/driving-
IC chip 500 of the fifth embodiment includes anSi substrate 501 having the integratedcircuit 502, and a raisedlayer 504 which is formed on aregion 503 adjacent to a region where theintegrated circuit 502 is placed. The raisedlayer 504 has asurface 504 a at a position higher than a surface of theintegrated circuit 502. The integrated LED/driving-IC chip 500 also includes ametal layer 505 formed on the raisedlayer 504, and anLED epitaxial film 510 bonded on the surface of themetal layer 505. The material and structure of the raisedlayer 504 can be freely selected. The raisedlayer 504 includes an interconnecting layer electrically connected to themetal layer 505 and an insulating layer formed in a region peripheral thereto. - As has been explained above, in the integrated LED/driving-
IC chip 500 of the fifth embodiment, theLED epitaxial film 510 can be bonded at a position higher than theirregular surface 502 a of theintegrated circuit 502 of theSi substrate 501. For this reason, a problem that a part (e.g., bonding collet) of a device used in the process of bonding theLED epitaxial film 510 onto themetal layer 505 on the raisedlayer 504 can be easily avoided. - The fifth embodiment is substantially the same as the above first to fourth embodiments, except for the above-described respects.
- FIG. 24 is a schematic cross sectional view of an
LED print head 700 having the semiconductor apparatus of the present invention built therein. As shown in FIG. 24, theLED print head 700 includes a base 701 on which anLED unit 702 is mounted. TheLED unit 702 includes a plurality of integrated LED/driving-IC chips 702 a of the type described in any of the preceding embodiments, mounted so that their light-emitting parts are positioned beneath arod lens array 703. Therod lens array 703 is supported by aholder 704. Thebase 701,LED unit 702, andholder 704 are held together byclamps 705. Light emitted by the light-emitting elements in theLED unit 702 is focused by rod lenses in therod lens array 703 onto, for example, a photosensitive drum (not shown) in an electrophotographic printer or copier. - Use of integrated LED/driving-
IC chips 702 a instead of the conventional paired LED array chips and driver IC chips enables theLED unit 702 to be reduced in size and reduces its assembly cost, as there are fewer chips to be mounted. - FIG. 25 shows an example of a full-
color LED printer 800 in which the present invention may be employed. Theprinter 800 has a yellow (Y)process unit 801, a magenta (M)process unit 802, a cyan (C)process unit 803, and a black (K)process unit 804, which are mounted following one another in tandem fashion. Thecyan process unit 803, for example, includes aphotosensitive drum 803 a that turns in the direction indicated by the arrow, a chargingunit 803 b that supplies current to thephotosensitive drum 803 a to charge the surface thereof, anLED print head 803 c that selectively illuminates the charged surface of thephotosensitive drum 803 a to form an electrostatic latent image, a developingunit 803 d that supplies cyan toner particles to the surface of thephotosensitive drum 803 a to develop the electrostatic latent image, and acleaning unit 803 e that removes remaining toner from thephotosensitive drum 803 a after the developed image has been transferred to paper. TheLED print head 803 c has, for example, the structure shown in FIG. 24, including integrated LED/driving-IC chips 702 a of the type described in any of the nine embodiments above. Theother process units cyan process unit 803, but use different toner colors. - The paper805 (or other media) is held as a stack of sheets in a
cassette 806. A hoppingroller 807 feeds thepaper 805 one sheet at a time toward a pairedtransport roller 810 andpinch roller 808. After passing between these rollers, thepaper 805 travels to aregistration roller 811 andpinch roller 809, which feed the paper toward theyellow process unit 801. - The
paper 810 passes through theprocess units transfer roller 812 made of, for example, semi-conductive rubber. Thetransfer roller 812 is charged so as to create a potential difference between it and the photosensitive drum. The potential difference attracts the toner image from the photosensitive drum onto thepaper 805. A full-color image is built up on thepaper 805 in four stages, theyellow process unit 801 printing a yellow image, the magenta process unit 802 a magenta image, thecyan process unit 803 a cyan image, and the black process unit 804 a black image. - From the
black process unit 804, thepaper 805 travels through afuser 813, in which a heat roller and back-up roller apply heat and pressure to fuse the transferred toner image onto the paper. Afirst delivery roller 814 andpinch roller 816 then feed thepaper 805 upward to asecond delivery roller 815 andpinch roller 817, which deliver the printed paper onto astacker 818 at the top of the printer. - The photosensitive drums and various of the rollers are driven by motors and gears not shown in the drawing. The motors are controlled by a control unit (not shown) that, for example, drives the
transport roller 810 and halts theregistration roller 811 until the front edge of a sheet ofpaper 805 rests flush againstregistration roller 811, then drives theregistration roller 811, thereby assuring that thepaper 805 is correctly aligned during its travel through theprocess units transport roller 810,registration roller 811,delivery rollers rollers paper 805. - The LED heads account for a significant part of the manufacturing cost of this type of
LED printer 800. By using highly reliable and space-efficient integrated LED/driving-IC chips and enabling these chips and the LED units in the LED heads to be manufactured by a simplified fabrication process with reduced material costs, the present invention enables a high-quality printer to be produced at a comparatively low cost. - Similar advantages are obtainable if the invention is applied to a full-color copier. The invention can also be advantageously used in a monochrome printer or copier or a multiple-color printer or copier, but its effect is particularly great in a full-color image-forming apparatus (printer or copier), because of the large number of exposure devices (print heads) required in such apparatus.
- Although explanation has been made in the foregoing embodiments in connection with the case where the planarized film on the Si substrate includes the metal layer, the metal layer may be replaced by an electrically conductive thin layer such as polysilicon, electrically conductive oxide (ITO, ZnO), or the like.
- Explanation has been made in the foregoing embodiments in connection with the case where the Si substrate is used as the semiconductor substrate. However, the semiconductor substrate may be made of other materials such as amorphous silicon, single crystal silicon, polysilicon, compound semiconductor or organic semiconductor.
- Although explanation has been made in the foregoing embodiments in connection with the case where the semiconductor device provided to the semiconductor thin film is the LED, the semiconductor device may be another light-emitting element such as a laser, a light-sensing element, a Hall element, or a piezoelectric element.
- Explanation has been made in the foregoing embodiments in connection with the case where the LED epitaxial film is made of epitaxial layers. However, a semiconductor thin film other than the epitaxial layer may be employed as the LED epitaxial film.
- Explanation has been made in the foregoing embodiments in connection with the case where the LED epitaxial film is bonded onto the planarized region on the semiconductor substrate or on the planarized film. When the semiconductor substrate has a less roughened surface, however, the LED epitaxial film may be bonded on a region not subjected to planarizing process such as CMP.
Claims (25)
1. A combined semiconductor apparatus comprising:
a semiconductor substrate having an integrated circuit;
a planarized region formed in a surface of said semiconductor substrate; and
a semiconductor thin film including at least one semiconductor device and bonded on said planarized region.
2. The combined semiconductor apparatus according to claim 1 , wherein said planarized region is a part of said surface of said semiconductor substrate which has been subjected to a planarizing process.
3. The combined semiconductor apparatus according to claim 1 , wherein said planarized region is disposed above said integrated circuit of said semiconductor substrate.
4. The combined semiconductor apparatus according to claim 1 , wherein said planarized region is disposed in a region of said semiconductor substrate adjacent to said integrated circuit of said semiconductor substrate.
5. The combined semiconductor apparatus according to claim 1 , further comprising a planarized film disposed between said planarized region and said semiconductor thin film, wherein a surface of said planarized film on a side of said semiconductor thin film has been subjected to a planarizing process.
6. The combined semiconductor apparatus according to claim 5 , wherein said planarized film includes:
an electrically conductive layer; and
an interdielectric layer formed in a region peripheral to said electrically conductive layer.
7. The combined semiconductor apparatus according to claim 1 , wherein a first surface of said semiconductor thin film, in which said semiconductor device is formed, is disposed on a side of said planarized region of said semiconductor substrate.
8. The combined semiconductor apparatus according to claim 7 , wherein said semiconductor thin film includes a common electrode layer on a second surface of said semiconductor thin film opposed to said first surface, and said integrated circuit has a common electrode terminal;
said apparatus further comprising a common interconnecting layer formed on a region extending from an upper surface of said common electrode layer of said semiconductor thin film to said common electrode terminal of said integrated circuit.
9. The combined semiconductor apparatus according to claim 1 , wherein said semiconductor thin film has a common electrode layer on a second surface of the semiconductor thin film opposed to a first surface of the semiconductor thin film, in which said semiconductor device is formed, and
said second surface of said semiconductor thin film is disposed on a side of said planarized region of said semiconductor substrate.
10. The combined semiconductor apparatus according to claim 9 , wherein said integrated circuit includes individual electrode terminals;
said apparatus further comprising individual interconnecting lines formed on a region extending from an upper surface of said semiconductor device to said individual electrode terminal.
11. A combined semiconductor apparatus comprising:
a semiconductor substrate;
an integrated circuit device disposed on said semiconductor substrate;
a raised layer formed on a surface of said semiconductor substrate in a region adjacent to said integrated circuit device, an upper surface of said raised layer being at a position higher than an upper surface of said integrated circuit device; and
a semiconductor thin film bonded on the upper surface of said raised layer.
12. A combined semiconductor apparatus comprising:
a semiconductor substrate having an integrated circuit; and
a semiconductor thin film including at least one semiconductor device and bonded on said semiconductor substrate;
wherein a first surface of said semiconductor thin film, in which said semiconductor device is formed, is disposed on a side of said semiconductor substrate.
13. The combined semiconductor apparatus according to claim 12 , further comprising an electrically conductive layer disposed between said semiconductor substrate and said semiconductor thin film.
14. The combined semiconductor apparatus according to claim 13 , further comprising an interdielectric layer disposed between said semiconductor substrate and said semiconductor thin film and in a region peripheral to said electrically conductive layer.
15. The combined semiconductor apparatus according to claim 12 , wherein said semiconductor thin film includes a common electrode layer on a second surface of said semiconductor thin film opposed to said first surface, and said integrated circuit has a common electrode terminal;
said apparatus further comprising a common interconnecting layer formed on a region extending from an upper surface of said common electrode layer of said semiconductor thin film to said common electrode terminal of said integrated circuit.
16. The combined semiconductor apparatus according to claim 1 , wherein said semiconductor thin film is made of compound semiconductor as a main materials.
17. The combined semiconductor apparatus according to claim 1 , wherein said at least one semiconductor device is any of a light-emitting element, a light-sensing element, a Hall element and a piezoelectric element, and said integrated circuit includes a driving-IC for driving said at least one semiconductor device.
18. The combined semiconductor apparatus according to claim 1 , wherein said at least one semiconductor device is a plurality of said semiconductor devices arranged in said semiconductor thin film.
19. The combined semiconductor apparatus according to claim 1 , wherein said at least one semiconductor device is a single semiconductor device disposed in said semiconductor thin film.
20. An optical print head including the combined semiconductor apparatus of claim 1 .
21. An optical print head including the combined semiconductor apparatus of claim 11 .
22. An optical print head including the combined semiconductor apparatus of claim 12 .
23. An image-forming apparatus comprising at least one optical print head including the combined semiconductor apparatus of claim 1 .
24. An image-forming apparatus comprising at least one optical print head including the combined semiconductor apparatus of claim 11 .
25. An image-forming apparatus comprising at least one optical print head including the combined semiconductor apparatus of claim 12.
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US20080217414A1 (en) * | 2007-03-09 | 2008-09-11 | Oki Data Corporation | Flexible display member and article having the same |
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Also Published As
Publication number | Publication date |
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US8664668B2 (en) | 2014-03-04 |
US20100096748A1 (en) | 2010-04-22 |
JP2004207323A (en) | 2004-07-22 |
JP4179866B2 (en) | 2008-11-12 |
EP1434271A3 (en) | 2011-01-12 |
EP1434271A2 (en) | 2004-06-30 |
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