US20030207507A1 - Method of manufacturing a semiconductor device and a process of a thin film transistor - Google Patents
Method of manufacturing a semiconductor device and a process of a thin film transistor Download PDFInfo
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- US20030207507A1 US20030207507A1 US10/449,028 US44902803A US2003207507A1 US 20030207507 A1 US20030207507 A1 US 20030207507A1 US 44902803 A US44902803 A US 44902803A US 2003207507 A1 US2003207507 A1 US 2003207507A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 85
- 238000000034 method Methods 0.000 title claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 239000010409 thin film Substances 0.000 title claims description 22
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 17
- 239000010408 film Substances 0.000 claims description 335
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 25
- 239000012535 impurity Substances 0.000 claims description 11
- 238000002425 crystallisation Methods 0.000 claims description 6
- 230000008025 crystallization Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 238000001816 cooling Methods 0.000 abstract description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 26
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 239000011521 glass Substances 0.000 description 18
- 238000004544 sputter deposition Methods 0.000 description 14
- 229910052759 nickel Inorganic materials 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 235000012239 silicon dioxide Nutrition 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 239000007789 gas Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- JZLMRQMUNCKZTP-UHFFFAOYSA-N molybdenum tantalum Chemical compound [Mo].[Ta] JZLMRQMUNCKZTP-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/88—Tunnel-effect diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/10—Lift-off masking
Definitions
- the present invention relates to a method of manufacturing a semiconductor device in which a film is formed by crystallizing a semiconductor film by radiating an energy beam on the semiconductor film such as amorphous silicon, particularly relates to a method of manufacturing a semiconductor device provided with structure in which the substrate material of a semiconductor film to be crystallized is not even such as a thin film transistor (TFT) used for a liquid crystal display (LCD) and others.
- TFT thin film transistor
- a TFT liquid crystal display uses a thin film transistor (TFT) for a pixel provided with a switching function and this TFT is formed on a glass substrate corresponding to each pixel of the liquid crystal display.
- TFTs of TFT consisting of amorphous silicon films and TFT consisting of polycrystalline silicon films
- high-performance TFT consisting of polycrystalline silicon films of these can be produced on a glass substrate at low temperature by irradiating an amorphous silicon film with an energy beam, particularly an excimer laser beam.
- the peripheral circuit of a liquid crystal display and a pixel switching device can be produced on the same substrate by using such TFT consisting of polycrystalline silicon films.
- TFT provided with bottom gate structure attracts attention of TFTs consisting of polycrystalline silicon films because particularly, stable characteristics can be obtained.
- This TFT provided with bottom gate structure is constituted as shown in FIG. 9 for example. That is, a gate electrode 101 consisting of molybdenum tantalum (MoTa) is formed on a glass substrate 100 and an oxide film (Ta 2 O 5 ) 102 is formed on this gate electrode 101 .
- a gate insulating film consisting of a silicon nitride (SiN x ) film 103 and a silicon dioxide (SiO 2 ) film 104 is formed on the glass substrate 100 including this oxide film 102 and further, a thin polycrystalline silicon film 105 is formed on this silicon dioxide film 104 .
- a source area 105 a and a drain area 105 b are respectively formed by doping N-type impurities for example in this polycrystalline silicon film 105 .
- a silicon dioxide film (SiO 2 ) 106 is selectively formed corresponding to the channel area 105 c of this polycrystalline silicon film 105 on the polycrystalline silicon film 105 .
- An N + doped polycrystalline silicon film 107 is formed on the polycrystalline silicon film 105 and the silicon dioxide film 106 and further, a source electrode 108 and a drain electrode 109 are respectively formed opposite to the source area 105 a and the drain area 105 b on this N + doped polycrystalline silicon film 107 .
- This TFT provided with bottom gate structure can be manufactured by the following method: That is, after a molybdenum tantalum (MoTa) film is formed on an overall glass substrate 100 , a gate electrode 101 is formed by patterning this molybdenum tantalum film by etching so that the film is in a predetermined shape. Afterward, an oxide film 102 is formed on the surface of the gate electrode 101 by anodizing the gate electrode 101 . Next, a silicon nitride film 103 , a silicon dioxide film 104 and an amorphous silicon film are sequentially formed on the overall oxide film 102 by plasma enhanced chemical vapor deposition (PECVD).
- PECVD plasma enhanced chemical vapor deposition
- this amorphous silicon film is once fused by irradiating this amorphous silicon film with a laser beam by an excimer laser for example and afterward, crystallized by cooling the film to room temperature.
- the amorphous silicon film is changed to a polycrystalline silicon film 105 .
- an amorphous silicon film including N-type impurities for example phosphorus (P) and arsenic (As) is formed and changed to an N + doped polycrystalline silicon film 107 by irradiating the above amorphous silicon film with a laser beam by an excimer laser again, and the impurities are electrically activated.
- N-type impurities for example phosphorus (P) and arsenic (As)
- this aluminum film and the N + doped polycrystalline silicon film 107 are respectively patterned by etching so that they are in a predetermined shape, and a source electrode 108 and a drain electrode 109 are respectively formed on a source area 105 a and a drain area 105 b .
- dangling bond and others are inactivated by exposing the above silicon dioxide film to hydrogen and hydrogenating a channel area 105 c by a hydrogen radical and atomic hydrogen which both pass through the silicon dioxide film 106 .
- TFT provided with bottom gate structure shown in FIG. 9 can be obtained by the above process.
- an energy beam is radiated onto an amorphous silicon film in a process for crystallizing it, however, at this time, the structure of a substrate under the amorphous silicon film is not even. That is, a metallic film (the gate electrode 101 ) is applied on the glass substrate 100 , the substrate under the amorphous silicon film consists of metal and glass which are different in material and heretofore, an energy beam is simultaneously radiated onto an amorphous silicon film over the respective substrate and film.
- the same energy beam as the following energy is also radiated onto an amorphous silicon film over the glass substrate 100 based upon the optimum condition of the crystallizing energy of the amorphous silicon film in a channel area over the metallic film (the gate electrode 101 ).
- the present invention is made to solve such problems and the object is to provide a method of manufacturing a semiconductor device in which an optimum quantity of energy beams can be radiated depending upon the structure of a substrate when an amorphous semiconductor film is crystallized, an overall film can be uniformly crystallized and a film is never broken.
- a method of manufacturing a semiconductor device comprises a process for selectively forming a metallic film on a substrate, a process for forming an amorphous semiconductor film on the substrate and the metallic film so that an area on the substrate is thicker than an area on the metallic film and a process for uniformly polycrystallizing the semiconductor film by radiating an energy beam onto the semiconductor film.
- a method of manufacturing a semiconductor device comprises a process for forming a metallic film as the gate electrode of a thin film transistor on the surface of a substrate and forming an insulating film on this metallic film and the substrate, a process for forming a first amorphous semiconductor film the thickness of which is uniform on the insulating film, a process for selectively forming a lift-off film in an area on the first semiconductor film corresponding to the metallic film, a process for forming a second amorphous semiconductor film the thickness of which is uniform including impurities on the lift-off film and the first semiconductor film and a process for polycrystallizing the first and second semiconductor films by radiating an energy beam after the lift-off film and an area on the lift-off film of the second semiconductor film are selectively removed and respectively forming the source area and the drain area of the thin film transistor.
- a method of manufacturing a semiconductor device may be also constituted so that it comprises a process for forming a metallic film as the gate electrode of a thin film transistor on the surface of a substrate and forming an insulating film on this metallic film and the substrate, a process for selectively forming a lift-off film in an area on the insulating film corresponding to the metallic film, a process for forming a first amorphous semiconductor film the thickness of which is uniform including impurities on the lift-off film and the insulating film, a process for forming a second amorphous semiconductor film the thickness of which is uniform on the insulating film and the first semiconductor film after the lift-off film and an area on the lift-off film of the first semiconductor film are selectively removed and a process for polycrystallizing the first and second semiconductor films by radiating an energy beam after the second semiconductor film is formed and respectively forming the source area and the drain area of the thin film transistor.
- the overall semiconductor film can be uniformly crystallized by radiating beams with the same energy.
- FIGS. 1 A to C are sectional views showing a method of manufacturing a thin film transistor equivalent to a first embodiment according to the present invention every process;
- FIGS. 2A and 2B are sectional views showing a process next to FIG. 1;
- FIGS. 3A to- 3 D are sectional views showing a method of manufacturing a thin film transistor equivalent to a second embodiment according to the present invention every process;
- FIG. 4A is a sectional view showing structure in which a metallic film is formed under a silicon film
- FIG. 4B is a sectional view showing structure in which a metallic film is not formed under a silicon film;
- FIG. 5 shows parameters of each material used for simulation for explaining the principle shown in FIGS. 4;
- FIG. 6 is a drawing showing a characteristic for explaining the change of the temperature of a silicon film when a laser beam is radiated on the structure shown in FIG. 4A;
- FIG. 7 is a drawing showing a characteristic for explaining the change of the temperature of a silicon film when a laser beam is radiated on the structure shown in FIG. 4B;
- FIG. 8 is a drawing showing a characteristic showing the thickness of a silicon film in the structure shown in FIG. 4B to the thickness (30 nm) of an insulating film shown in FIG. 4A for obtaining the maximum temperature of 2650 K in both structures shown in FIGS. 4A and 4B;
- FIG. 9 is a sectional view for explaining the prior structure of a thin film transistor and the manufacturing method.
- an overall semiconductor film can be uniformly crystallized by radiating beams with the same energy by changing the thickness of the amorphous silicon film depending upon the structure of a substrate (whether a metallic film is formed or not). The reasons will be described below.
- FIGS. 4A and 4B show examples of substrates which are different in the substrate structure of a silicon film.
- the structure shown in FIG. 4A is formed by sequentially forming a nickel (Ni) film 41 on a glass substrate 40 , a silicon nitride (SiN) film 42 , an insulating film (SiO 2 ) 43 and an amorphous silicon film (a-Si) 44 on the nickel film.
- the structure shown in FIG. 4B is formed by sequentially forming a silicon nitride (SiN) film 42 on a glass substrate 40 , an insulating film (SiO 2 ) 43 and an amorphous silicon film 44 and is the same as the structure shown in FIG. 4A except that a metallic film (the nickel film 41 ) is not formed under the amorphous silicon film 44 .
- FIG. 6 shows the result of simulating the change of the temperature of the surface of the amorphous silicon film 44 when an excimer laser beam (energy: 360 mJ/cm 2 , pulse length: 30 ns, wavelength: 308 nm) is radiated onto the amorphous silicon film 44 in the structure shown in FIG. 4A as an energy beam.
- FIG. 7 shows the result of simulating the change of the temperature of the surface of the amorphous silicon film 44 when the same excimer laser beam is radiated onto the amorphous silicon film 44 in the structure shown in FIG. 4B.
- FIG. 5 shows the parameters of the material of each film.
- the maximum temperature is approximately 2650 (K), while if a metallic film (the nickel film 41 ) is not formed below the amorphous silicon film as shown in FIG. 4B, the maximum temperature is approximately 2940 (K) and is greatly different depending upon the structure of a substrate.
- the difference between the maximum temperatures is increased as the insulating film 43 is thinned.
- an excimer laser beam is radiated onto the amorphous silicon film 44 in the respective structures shown in FIGS. 4 A and B, it is desirable so as to optimize a laser beam condition that the maximum temperature which can be achieved by the same energy of the surface of each amorphous silicon film 44 is the same.
- the inventors of the present invention consider that if a silicon film on a metallic film (the nickel film 41 ) is thickened in the structure shown in FIG. 4B, the same temperature condition as in the structure shown in FIG. 4A can be set and therefore, the temperature of the surface of the silicon film can be equal independent of the structure of a substrate (whether a metallic film is formed or not), and obtain a drawing showing a characteristic in FIG. 8 in experiments.
- FIG. 8 shows the thickness of the silicon film 44 in the structure shown in FIG. 4B to that of the silicon film 44 which is 30 nm shown in FIG. 4A for obtaining the maximum temperature of 2650 K in both structures shown in FIGS. 4 A and B. That is, FIG. 8 shows the result of simulating the thickness of the silicon film 44 in the structure shown in FIG. 4B in case that in the structure shown in FIG.
- the thickness of the silicon film 44 on the nickel (Ni) film 41 is set to 30 nm, the thickness of the nickel film 41 is set to 100 nm, the thickness of the silicon nitride (SiN) film 42 is set to 50 nm and the thickness of an insulating film (SiO 2 ) 43 is changed so that the temperature of the surface of the silicon film in the structures shown in FIGS. 4 A and B reaches 2650 K (the boiling point of silicon).
- This result shows that when the thickness of the insulating film 43 in the structure shown in FIG. 4A is reduced, the silicon film is required to be thickened in the structure shown in FIG. 4B to obtain the same maximum temperature. That is, the result shows that the thickness of the silicon film in the structure shown in FIG. 4B has only to be set according to the result shown in FIG. 8 so that the maximum temperature of the surface of the silicon film 44 obtained by radiating an energy beam in the structures shown in FIGS. 4 A and B can be equal so as to optimize a laser beam condition.
- the present invention utilizes such a result for uniformly crystallizing an overall film at the same maximum temperature by changing the thickness of a silicon film depending upon the structure of a substrate (whether a metallic film is formed or not) on the same substrate.
- An example in which the present invention is applied to a method of manufacturing a thin film transistor will be described below.
- FIGS. 1 A to C and FIGS. 2 A and B show a method of manufacturing a thin film transistor equivalent to a first embodiment of the present invention in the order of processes.
- a gate electrode 11 consisting of a nickel (Ni) film the thickness of which is 100 nm is formed on the overall surface of a substrate, for example a glass substrate 10 by sputtering using argon (Ar) as sputtering gas.
- Ni nickel
- Ar argon
- a laminated insulting film 12 is formed by sequentially forming a silicon nitride (SiN x ) layer which is 50 nm thick and a silicon dioxide (SiO 2 ) layer which is 100 nm thick on the overall surface similarly by sputtering using helium (He) as sputtering gas, and next, an amorphous silicon film 13 which is 30 nm thick is formed on the insulating film 12 by PECVD for example.
- a photoresist is applied onto this amorphous silicon film 13 and exposure (back exposure) 15 to this photoresist by gamma rays (wavelength: 436 nm) for example is executed from the rear side of the glass substrate 10 .
- a photoresist film 14 with the same width as the gate electrode 12 as shown in FIG. 1B is formed by self-matching with the gate electrode 12 functioning as a mask.
- an N + doped amorphous silicon film 16 including N-type impurities, for example phosphorus (P) is formed on the insulating film 12 and the photoresist film 14 by PECVD for example.
- the temperature of the substrate at this time shall be the heat-resistant temperature (for example, 150° C.) of the photoresist or less.
- the thickness of the N + doped amorphous silicon film 16 is determined according to the result shown in FIG. 8 based upon the thickness of the SiO 2 layer of the insulating film 12 . As the thickness of the SiO 2 layer of the insulating film 12 is set to 100 nm in this embodiment, the required thickness of the amorphous silicon film in an area except the gate electrode 11 is 48 nm as shown in FIG. 8. Therefore, the thickness of the N + doped amorphous silicon film 16 is set to 18 nm obtained by subtracting 30 nm (the thickness of the amorphous silicon film 13 ) from 48 nm.
- the photoresist film 14 and the area of the N + doped amorphous silicon film 16 on the photoresist film 14 are selectively removed by a lift-off method.
- the amorphous silicon film is thicker in an area except an area over metal (the gate electrode 11 ) than in the area over the metal.
- a laser beam 17 is radiated from the surface of the substrate.
- the N + doped amorphous silicon film 16 and the amorphous silicon film 13 are melted by radiating a laser beam 17 as described above and afterward, melted areas are crystallized by cooling them to room temperature.
- the N-type impurities in the N + doped amorphous silicon film 16 are diffused on the side of the amorphous silicon film 13 and an N + doped polycrystalline silicon film 18 provided with a source area 18 a and a drain area 18 b is formed.
- the amorphous silicon film is thicker in the area except the area over the metallic film (the thickness of the amorphous silicon film: 48 nm) than in the area over the metallic film (the gate electrode 11 ) (thickness: 30 nm), the maximum temperature of the surface of the film is substantially equal as described above and the overall film can be uniformly crystallized.
- a laser beam 17 that a laser beam the wavelength of which the N + doped amorphous silicon film 18 can absorb, particularly a pulse laser beam by an excimer laser is used.
- a pulse laser beam wavelength: 308 nm
- a pulse laser beam wavelength: 350 nm
- XeF excimer laser and others are used.
- electrodes 19 a and 19 b consisting of aluminum (Al) are respectively formed on the source area 18 a and the drain area 18 b in the N + doped polycrystalline silicon film 18 by sputtering using argon (Ar) as sputtering gas.
- the channel area 18 c in the N + doped polycrystalline silicon film 18 is hydrogenated in hydrogen plasma to inactivate dangling bond and others.
- the thickness of a silicon film is set to a different value depending upon the structure of a substrate (whether a metallic film is formed or not) when a laser beam 17 is radiated for crystallization, the silicon film can be uniformly crystallized over the overall substrate. Therefore, a film is never broken and a process margin can be increased.
- FIGS. 3A to 3 D show a method of manufacturing a thin film transistor equivalent to a second embodiment of the present invention in the order of processes.
- the order in the first embodiment of forming an amorphous silicon film and a doped amorphous silicon film is inverted.
- a gate electrode 31 consisting of a nickel (Ni) film which is 100 nm thick is formed on the overall surface of a substrate, for example a glass substrate 30 by sputtering using argon (Ar) as sputtering gas.
- a laminated insulating film 32 which is 100 nm thick is formed by sequentially forming a silicon nitride (SiN x ) film and a silicon dioxide (SiO 2 ) film on the overall substrate similarly by sputtering using helium (He) as sputtering gas and next, a photoresist is applied onto this insulating film 32 and exposure (back exposure) 35 to this photoresist by gamma rays (wavelength: 436 nm) for example is executed from the rear side of the glass substrate 30 .
- a photoresist film 33 with the same width as the gate electrode 31 is formed by self-matching with the gate electrode 31 functioning as a mask.
- an N + doped amorphous silicon film 34 including N-type impurities, for example phosphorus (P) is formed on the insulating film 32 and the photoresist film 33 by PECVD for example.
- the temperature of the substrate at this time shall be the heat-resistant temperature (for example, 150° C.) of the photoresist or less.
- the thickness of this N + doped amorphous silicon film 34 is determined according to a drawing showing a characteristic shown in FIG. 8 based upon the thickness of the insulating film 32 as in the first embodiment.
- the thickness of the SiO 2 layer of the insulating film 32 is set to 100 nm in this embodiment, the required thickness of the amorphous silicon film in an area except the gate electrode 31 is 48 nm as shown in FIG. 8. Therefore, the thickness of the N + doped amorphous silicon film 34 is set to 18 nm obtained by subtracting 30 nm (the thickness of an amorphous silicon film 36 to be formed continuously) from 48 nm.
- the photoresist film 33 and the area of the N + doped amorphous silicon film 34 on the photoresist film 33 are selectively removed by a lift-off method.
- an amorphous silicon film 36 which is 30 nm thick is formed on the N + doped amorphous silicon film 34 and the insulating film 32 by PECVD for example.
- the amorphous silicon film is thicker in an area (the thickness of the amorphous silicon film: 48 nm) except an area over metal (the gate electrode 31 ) than in the area (thickness: 30 nm) over metal.
- a laser beam 37 is radiated on the overall surface from the surface of the substrate.
- the N + doped amorphous silicon film 34 and the amorphous silicon film 36 are melted by radiating a laser beam 17 as described above and afterward, melted areas are crystallized by cooling them to room temperature. At this time, the N-type impurities in the N + doped amorphous silicon film 34 are diffused on the side of the amorphous silicon film 36 and an N + doped polycrystalline silicon film 38 provided with a source area 38 a and a drain area 38 b is formed.
- the amorphous silicon film is also thicker in the area (the thickness of the amorphous silicon film: 48 nm) except the area over the metallic film than in the area (thickness: 30 nm) over the metallic film (the gate electrode 31 ), the maximum temperature of the surface of the film is substantially equal and the overall film can be uniformly crystallized.
- electrodes 39 a and 39 b consisting of aluminum (Al) are respectively formed on the source area 38 a and the drain area 38 b in the N + doped polycrystalline silicon film 38 by sputtering using argon (Ar) as sputtering gas.
- a channel area 38 c in the N + doped polycrystalline silicon film 38 is hydrogenated in hydrogen plasma to inactivate dangling bond and others.
- the thickness of a silicon film is set to a different value depending upon the state of a substrate (whether a metallic film is formed or not) when a laser beam 37 is radiated for crystallization, the silicon film can be uniformly crystallized over the overall substrate and a film can be prevented from being broken.
- a metallic film under a silicon film is a nickel film, however, it may be also formed by the other metallic film.
- a silicon film is used for an amorphous semiconductor film, however, the other amorphous film may be also used if only it can be crystallized by radiating an energy beam.
- the present invention is applied to a method of manufacturing a thin film transistor, however, it may be also applied to a process for manufacturing the other semiconductor device.
- a method of forming amorphous semiconductor films different in thickness depending upon the structure of a substrate is not limited to the methods described in the above embodiments and the other method may be also used.
- the thickness of a semiconductor film is set to a different value depending upon the state of a substrate (whether a metallic film is formed or not) when an energy beam is radiated to crystallize the amorphous semiconductor film, the overall semiconductor film can be uniformly crystallized by radiating beams with the same energy. Therefore, there is effect that a film is never broken and a process margin can be increased.
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Abstract
To enable radiating an optimum energy beam depending upon the structure of a substrate (whether a metallic film is formed or not) when an amorphous semiconductor film is crystallized and uniformly crystallizing the overall film, first, a photoresist film and the area of an N− doped amorphous silicon film on the photoresist film are selectively removed by a lift-off method. Hereby, the amorphous silicon film is thicker in an area except an area over a metallic film (a gate electrode) than in the area over the metallic film In this state, a laser beam is radiated. The N− doped amorphous silicon film and an amorphous silicon film are melted by radiating a laser beam and afterward, melted areas are crystallized by cooling them to room temperature. As the amorphous silicon film is thicker in the area except the area under which the metallic film (the gate electrode) is formed than in the area under which the metallic film is formed, the maximum temperature of the surface of the film is equal and the overall film can be uniformly crystallized.
Description
- 1. Field of the Invention
- The present invention relates to a method of manufacturing a semiconductor device in which a film is formed by crystallizing a semiconductor film by radiating an energy beam on the semiconductor film such as amorphous silicon, particularly relates to a method of manufacturing a semiconductor device provided with structure in which the substrate material of a semiconductor film to be crystallized is not even such as a thin film transistor (TFT) used for a liquid crystal display (LCD) and others.
- 2. Description of the Related Art
- A TFT liquid crystal display uses a thin film transistor (TFT) for a pixel provided with a switching function and this TFT is formed on a glass substrate corresponding to each pixel of the liquid crystal display. There are two types of TFTs of TFT consisting of amorphous silicon films and TFT consisting of polycrystalline silicon films, and high-performance TFT consisting of polycrystalline silicon films of these can be produced on a glass substrate at low temperature by irradiating an amorphous silicon film with an energy beam, particularly an excimer laser beam. The peripheral circuit of a liquid crystal display and a pixel switching device can be produced on the same substrate by using such TFT consisting of polycrystalline silicon films. Recently, TFT provided with bottom gate structure attracts attention of TFTs consisting of polycrystalline silicon films because particularly, stable characteristics can be obtained.
- This TFT provided with bottom gate structure is constituted as shown in FIG. 9 for example. That is, a
gate electrode 101 consisting of molybdenum tantalum (MoTa) is formed on aglass substrate 100 and an oxide film (Ta2O5) 102 is formed on thisgate electrode 101. A gate insulating film consisting of a silicon nitride (SiNx)film 103 and a silicon dioxide (SiO2)film 104 is formed on theglass substrate 100 including thisoxide film 102 and further, a thinpolycrystalline silicon film 105 is formed on thissilicon dioxide film 104. Asource area 105 a and adrain area 105 b are respectively formed by doping N-type impurities for example in thispolycrystalline silicon film 105. A silicon dioxide film (SiO2) 106 is selectively formed corresponding to thechannel area 105 c of thispolycrystalline silicon film 105 on thepolycrystalline silicon film 105. An N+ dopedpolycrystalline silicon film 107 is formed on thepolycrystalline silicon film 105 and thesilicon dioxide film 106 and further, asource electrode 108 and adrain electrode 109 are respectively formed opposite to thesource area 105 a and thedrain area 105 b on this N+ dopedpolycrystalline silicon film 107. - This TFT provided with bottom gate structure can be manufactured by the following method: That is, after a molybdenum tantalum (MoTa) film is formed on an
overall glass substrate 100, agate electrode 101 is formed by patterning this molybdenum tantalum film by etching so that the film is in a predetermined shape. Afterward, anoxide film 102 is formed on the surface of thegate electrode 101 by anodizing thegate electrode 101. Next, asilicon nitride film 103, asilicon dioxide film 104 and an amorphous silicon film are sequentially formed on theoverall oxide film 102 by plasma enhanced chemical vapor deposition (PECVD). - Next, this amorphous silicon film is once fused by irradiating this amorphous silicon film with a laser beam by an excimer laser for example and afterward, crystallized by cooling the film to room temperature. Hereby, the amorphous silicon film is changed to a
polycrystalline silicon film 105. Next, after asilicon dioxide film 106 in the shape corresponding to a channel area is selectively formed on thepolycrystalline silicon film 105 of a part to be a channel area, an amorphous silicon film including N-type impurities, for example phosphorus (P) and arsenic (As) is formed and changed to an N+ dopedpolycrystalline silicon film 107 by irradiating the above amorphous silicon film with a laser beam by an excimer laser again, and the impurities are electrically activated. - Next, after an aluminum (Al) film is formed on the overall film by a sputtering method using argon (Ar) as sputtering gas, this aluminum film and the N+ doped
polycrystalline silicon film 107 are respectively patterned by etching so that they are in a predetermined shape, and asource electrode 108 and adrain electrode 109 are respectively formed on asource area 105 a and adrain area 105 b. Next, dangling bond and others are inactivated by exposing the above silicon dioxide film to hydrogen and hydrogenating achannel area 105 c by a hydrogen radical and atomic hydrogen which both pass through thesilicon dioxide film 106. TFT provided with bottom gate structure shown in FIG. 9 can be obtained by the above process. - As described above, in the prior method, an energy beam is radiated onto an amorphous silicon film in a process for crystallizing it, however, at this time, the structure of a substrate under the amorphous silicon film is not even. That is, a metallic film (the gate electrode101) is applied on the
glass substrate 100, the substrate under the amorphous silicon film consists of metal and glass which are different in material and heretofore, an energy beam is simultaneously radiated onto an amorphous silicon film over the respective substrate and film. In this case, the same energy beam as the following energy is also radiated onto an amorphous silicon film over theglass substrate 100 based upon the optimum condition of the crystallizing energy of the amorphous silicon film in a channel area over the metallic film (the gate electrode 101). - However, even if the same amorphous silicon film is used, the optimum value of energy required for crystallization is different depending upon whether a substrate is made of metal or glass because thermal conductivity is different. Therefore, more energy beam is radiated onto the amorphous silicon film on the
glass substrate 100 by the prior method according to the optimum condition of the amorphous silicon film on the metallic film (the gate electrode 101) than the optimum condition and therefore, there is a problem that partially a film is broken. - The present invention is made to solve such problems and the object is to provide a method of manufacturing a semiconductor device in which an optimum quantity of energy beams can be radiated depending upon the structure of a substrate when an amorphous semiconductor film is crystallized, an overall film can be uniformly crystallized and a film is never broken.
- A method of manufacturing a semiconductor device according to the present invention comprises a process for selectively forming a metallic film on a substrate, a process for forming an amorphous semiconductor film on the substrate and the metallic film so that an area on the substrate is thicker than an area on the metallic film and a process for uniformly polycrystallizing the semiconductor film by radiating an energy beam onto the semiconductor film.
- More concretely, a method of manufacturing a semiconductor device according to the present invention comprises a process for forming a metallic film as the gate electrode of a thin film transistor on the surface of a substrate and forming an insulating film on this metallic film and the substrate, a process for forming a first amorphous semiconductor film the thickness of which is uniform on the insulating film, a process for selectively forming a lift-off film in an area on the first semiconductor film corresponding to the metallic film, a process for forming a second amorphous semiconductor film the thickness of which is uniform including impurities on the lift-off film and the first semiconductor film and a process for polycrystallizing the first and second semiconductor films by radiating an energy beam after the lift-off film and an area on the lift-off film of the second semiconductor film are selectively removed and respectively forming the source area and the drain area of the thin film transistor.
- A method of manufacturing a semiconductor device according to the present invention may be also constituted so that it comprises a process for forming a metallic film as the gate electrode of a thin film transistor on the surface of a substrate and forming an insulating film on this metallic film and the substrate, a process for selectively forming a lift-off film in an area on the insulating film corresponding to the metallic film, a process for forming a first amorphous semiconductor film the thickness of which is uniform including impurities on the lift-off film and the insulating film, a process for forming a second amorphous semiconductor film the thickness of which is uniform on the insulating film and the first semiconductor film after the lift-off film and an area on the lift-off film of the first semiconductor film are selectively removed and a process for polycrystallizing the first and second semiconductor films by radiating an energy beam after the second semiconductor film is formed and respectively forming the source area and the drain area of the thin film transistor.
- According to a method of manufacturing a semiconductor device according to the present invention, as the thickness of a semiconductor film is different depending upon the state of a substrate (whether a metallic film is formed or not) when an energy beam is radiated to crystallize an amorphous semiconductor film, the overall semiconductor film can be uniformly crystallized by radiating beams with the same energy.
- FIGS. 1 A to C are sectional views showing a method of manufacturing a thin film transistor equivalent to a first embodiment according to the present invention every process;
- FIGS. 2A and 2B are sectional views showing a process next to FIG. 1;
- FIGS. 3A to-3D are sectional views showing a method of manufacturing a thin film transistor equivalent to a second embodiment according to the present invention every process;
- FIGS. 4A and 4B explain the basic principle of the present invention, FIG. 4A is a sectional view showing structure in which a metallic film is formed under a silicon film and FIG. 4B is a sectional view showing structure in which a metallic film is not formed under a silicon film;
- FIG. 5 shows parameters of each material used for simulation for explaining the principle shown in FIGS. 4;
- FIG. 6 is a drawing showing a characteristic for explaining the change of the temperature of a silicon film when a laser beam is radiated on the structure shown in FIG. 4A;
- FIG. 7 is a drawing showing a characteristic for explaining the change of the temperature of a silicon film when a laser beam is radiated on the structure shown in FIG. 4B;
- FIG. 8 is a drawing showing a characteristic showing the thickness of a silicon film in the structure shown in FIG. 4B to the thickness (30 nm) of an insulating film shown in FIG. 4A for obtaining the maximum temperature of 2650 K in both structures shown in FIGS. 4A and 4B; and
- FIG. 9 is a sectional view for explaining the prior structure of a thin film transistor and the manufacturing method.
- Referring to drawings, embodiments according to the present invention will be described in detail below.
- Prior to the concrete description of the embodiments, first, the basic principle of the present invention will be described. As described above, even if the same amorphous silicon film is used, the optimum value of energy required for crystallization is different depending upon whether a substrate is made by metal or glass. According to the present invention, an overall semiconductor film can be uniformly crystallized by radiating beams with the same energy by changing the thickness of the amorphous silicon film depending upon the structure of a substrate (whether a metallic film is formed or not). The reasons will be described below.
- FIGS. 4A and 4B show examples of substrates which are different in the substrate structure of a silicon film. The structure shown in FIG. 4A is formed by sequentially forming a nickel (Ni)
film 41 on aglass substrate 40, a silicon nitride (SiN)film 42, an insulating film (SiO2) 43 and an amorphous silicon film (a-Si) 44 on the nickel film. In the meantime, the structure shown in FIG. 4B is formed by sequentially forming a silicon nitride (SiN)film 42 on aglass substrate 40, an insulating film (SiO2) 43 and anamorphous silicon film 44 and is the same as the structure shown in FIG. 4A except that a metallic film (the nickel film 41) is not formed under theamorphous silicon film 44. - FIG. 6 shows the result of simulating the change of the temperature of the surface of the
amorphous silicon film 44 when an excimer laser beam (energy: 360 mJ/cm2, pulse length: 30 ns, wavelength: 308 nm) is radiated onto theamorphous silicon film 44 in the structure shown in FIG. 4A as an energy beam. In the meantime, FIG. 7 shows the result of simulating the change of the temperature of the surface of theamorphous silicon film 44 when the same excimer laser beam is radiated onto theamorphous silicon film 44 in the structure shown in FIG. 4B. FIG. 5 shows the parameters of the material of each film. - As clear from the result of FIGS. 6 and 7, while an excimer laser beam is radiated, the temperature of the
amorphous silicon film 44 rapidly rises to a melting point (the melting point of a-Si) and when the temperature reaches the melting point, the incline of rising is once gentle because of the latent heat of melting and afterward, the temperature rapidly rises again. Even if excimer laser beams with the same energy are radiated, the maximum temperature is different depending upon the substrate structure of theamorphous silicon film 44. That is, if a metallic film (the nickel film 41) is formed below theamorphous silicon film 44 as shown in FIG. 4A, the maximum temperature is approximately 2650 (K), while if a metallic film (the nickel film 41) is not formed below the amorphous silicon film as shown in FIG. 4B, the maximum temperature is approximately 2940 (K) and is greatly different depending upon the structure of a substrate. The difference between the maximum temperatures is increased as the insulatingfilm 43 is thinned. When the radiation of an excimer laser beam is finished after the temperature reaches the maximum temperature, heat is transmitted in the direction of theglass substrate 40 and the temperature of theamorphous silicon film 44 gradually falls in both structures shown in FIGS. 4 A and B. When the temperature reaches temperature required for crystallizing silicon (1410° C.) , latent heat is generated by crystallization, the temperature is held fixed for some time (crystallizing time) and afterward, gradually falls again. - If an excimer laser beam is radiated onto the
amorphous silicon film 44 in the respective structures shown in FIGS. 4 A and B, it is desirable so as to optimize a laser beam condition that the maximum temperature which can be achieved by the same energy of the surface of eachamorphous silicon film 44 is the same. The inventors of the present invention consider that if a silicon film on a metallic film (the nickel film 41) is thickened in the structure shown in FIG. 4B, the same temperature condition as in the structure shown in FIG. 4A can be set and therefore, the temperature of the surface of the silicon film can be equal independent of the structure of a substrate (whether a metallic film is formed or not), and obtain a drawing showing a characteristic in FIG. 8 in experiments. - FIG. 8 shows the thickness of the
silicon film 44 in the structure shown in FIG. 4B to that of thesilicon film 44 which is 30 nm shown in FIG. 4A for obtaining the maximum temperature of 2650 K in both structures shown in FIGS. 4 A and B. That is, FIG. 8 shows the result of simulating the thickness of thesilicon film 44 in the structure shown in FIG. 4B in case that in the structure shown in FIG. 4A, the thickness of thesilicon film 44 on the nickel (Ni)film 41 is set to 30 nm, the thickness of thenickel film 41 is set to 100 nm, the thickness of the silicon nitride (SiN)film 42 is set to 50 nm and the thickness of an insulating film (SiO2) 43 is changed so that the temperature of the surface of the silicon film in the structures shown in FIGS. 4 A and B reaches 2650 K (the boiling point of silicon). This result shows that when the thickness of the insulatingfilm 43 in the structure shown in FIG. 4A is reduced, the silicon film is required to be thickened in the structure shown in FIG. 4B to obtain the same maximum temperature. That is, the result shows that the thickness of the silicon film in the structure shown in FIG. 4B has only to be set according to the result shown in FIG. 8 so that the maximum temperature of the surface of thesilicon film 44 obtained by radiating an energy beam in the structures shown in FIGS. 4 A and B can be equal so as to optimize a laser beam condition. - The present invention utilizes such a result for uniformly crystallizing an overall film at the same maximum temperature by changing the thickness of a silicon film depending upon the structure of a substrate (whether a metallic film is formed or not) on the same substrate. An example in which the present invention is applied to a method of manufacturing a thin film transistor will be described below.
- First Embodiment
- FIGS. 1 A to C and FIGS. 2 A and B show a method of manufacturing a thin film transistor equivalent to a first embodiment of the present invention in the order of processes. First, as shown in FIG. 1A, a
gate electrode 11 consisting of a nickel (Ni) film the thickness of which is 100 nm is formed on the overall surface of a substrate, for example aglass substrate 10 by sputtering using argon (Ar) as sputtering gas. Next, a laminatedinsulting film 12 is formed by sequentially forming a silicon nitride (SiNx) layer which is 50 nm thick and a silicon dioxide (SiO2) layer which is 100 nm thick on the overall surface similarly by sputtering using helium (He) as sputtering gas, and next, anamorphous silicon film 13 which is 30 nm thick is formed on the insulatingfilm 12 by PECVD for example. - After the
amorphous silicon film 13 is formed, a photoresist is applied onto thisamorphous silicon film 13 and exposure (back exposure) 15 to this photoresist by gamma rays (wavelength: 436 nm) for example is executed from the rear side of theglass substrate 10. At this time, aphotoresist film 14 with the same width as thegate electrode 12 as shown in FIG. 1B is formed by self-matching with thegate electrode 12 functioning as a mask. Next, as shown in FIG. 1C, an N+ dopedamorphous silicon film 16 including N-type impurities, for example phosphorus (P) is formed on the insulatingfilm 12 and thephotoresist film 14 by PECVD for example. The temperature of the substrate at this time shall be the heat-resistant temperature (for example, 150° C.) of the photoresist or less. The thickness of the N+ dopedamorphous silicon film 16 is determined according to the result shown in FIG. 8 based upon the thickness of the SiO2 layer of the insulatingfilm 12. As the thickness of the SiO2 layer of the insulatingfilm 12 is set to 100 nm in this embodiment, the required thickness of the amorphous silicon film in an area except thegate electrode 11 is 48 nm as shown in FIG. 8. Therefore, the thickness of the N+ dopedamorphous silicon film 16 is set to 18 nm obtained by subtracting 30 nm (the thickness of the amorphous silicon film 13) from 48 nm. - Afterward, as shown in FIG. 2A, the
photoresist film 14 and the area of the N+ dopedamorphous silicon film 16 on the photoresist film 14 (that is, an area corresponding to a channel area) are selectively removed by a lift-off method. Hereby, the amorphous silicon film is thicker in an area except an area over metal (the gate electrode 11) than in the area over the metal. In this state, next, alaser beam 17 is radiated from the surface of the substrate. The N+ dopedamorphous silicon film 16 and theamorphous silicon film 13 are melted by radiating alaser beam 17 as described above and afterward, melted areas are crystallized by cooling them to room temperature. At this time, the N-type impurities in the N+ dopedamorphous silicon film 16 are diffused on the side of theamorphous silicon film 13 and an N+ dopedpolycrystalline silicon film 18 provided with a source area 18 a and adrain area 18 b is formed. As in this embodiment, the amorphous silicon film is thicker in the area except the area over the metallic film (the thickness of the amorphous silicon film: 48 nm) than in the area over the metallic film (the gate electrode 11) (thickness: 30 nm), the maximum temperature of the surface of the film is substantially equal as described above and the overall film can be uniformly crystallized. - It is desirable for a
laser beam 17 that a laser beam the wavelength of which the N+ dopedamorphous silicon film 18 can absorb, particularly a pulse laser beam by an excimer laser is used. In detail, a pulse laser beam (wavelength: 308 nm) by XeCl excimer laser, a pulse laser beam (wavelength: 350 nm) by XeF excimer laser and others are used. - Next, as shown in FIG. 2B,
electrodes drain area 18 b in the N+ dopedpolycrystalline silicon film 18 by sputtering using argon (Ar) as sputtering gas. Next, thechannel area 18 c in the N+ dopedpolycrystalline silicon film 18 is hydrogenated in hydrogen plasma to inactivate dangling bond and others. - As described above, according to the method of manufacturing a thin film transistor equivalent to this embodiment, as the thickness of a silicon film is set to a different value depending upon the structure of a substrate (whether a metallic film is formed or not) when a
laser beam 17 is radiated for crystallization, the silicon film can be uniformly crystallized over the overall substrate. Therefore, a film is never broken and a process margin can be increased. - Second Embodiment
- FIGS. 3A to3D show a method of manufacturing a thin film transistor equivalent to a second embodiment of the present invention in the order of processes. In this embodiment, the order in the first embodiment of forming an amorphous silicon film and a doped amorphous silicon film is inverted.
- That is, first as shown in FIG. 3A, a
gate electrode 31 consisting of a nickel (Ni) film which is 100 nm thick is formed on the overall surface of a substrate, for example aglass substrate 30 by sputtering using argon (Ar) as sputtering gas. Next, a laminated insulatingfilm 32 which is 100 nm thick is formed by sequentially forming a silicon nitride (SiNx) film and a silicon dioxide (SiO2) film on the overall substrate similarly by sputtering using helium (He) as sputtering gas and next, a photoresist is applied onto this insulatingfilm 32 and exposure (back exposure) 35 to this photoresist by gamma rays (wavelength: 436 nm) for example is executed from the rear side of theglass substrate 30. At this time, aphotoresist film 33 with the same width as thegate electrode 31 is formed by self-matching with thegate electrode 31 functioning as a mask. Next, an N+ dopedamorphous silicon film 34 including N-type impurities, for example phosphorus (P) is formed on the insulatingfilm 32 and thephotoresist film 33 by PECVD for example. The temperature of the substrate at this time shall be the heat-resistant temperature (for example, 150° C.) of the photoresist or less. The thickness of this N+ dopedamorphous silicon film 34 is determined according to a drawing showing a characteristic shown in FIG. 8 based upon the thickness of the insulatingfilm 32 as in the first embodiment. That is, as the thickness of the SiO2 layer of the insulatingfilm 32 is set to 100 nm in this embodiment, the required thickness of the amorphous silicon film in an area except thegate electrode 31 is 48 nm as shown in FIG. 8. Therefore, the thickness of the N+ dopedamorphous silicon film 34 is set to 18 nm obtained by subtracting 30 nm (the thickness of anamorphous silicon film 36 to be formed continuously) from 48 nm. - Afterward, as shown in FIG. 3B, the
photoresist film 33 and the area of the N+ dopedamorphous silicon film 34 on the photoresist film 33 (that is, an area corresponding to a channel area) are selectively removed by a lift-off method. - Next, as shown in FIG. 3C, an
amorphous silicon film 36 which is 30 nm thick is formed on the N+ dopedamorphous silicon film 34 and the insulatingfilm 32 by PECVD for example. Hereby, the amorphous silicon film is thicker in an area (the thickness of the amorphous silicon film: 48 nm) except an area over metal (the gate electrode 31) than in the area (thickness: 30 nm) over metal. In this state, next, alaser beam 37 is radiated on the overall surface from the surface of the substrate. The N+ dopedamorphous silicon film 34 and theamorphous silicon film 36 are melted by radiating alaser beam 17 as described above and afterward, melted areas are crystallized by cooling them to room temperature. At this time, the N-type impurities in the N+ dopedamorphous silicon film 34 are diffused on the side of theamorphous silicon film 36 and an N+ dopedpolycrystalline silicon film 38 provided with asource area 38 a and adrain area 38 b is formed. As in this embodiment, the amorphous silicon film is also thicker in the area (the thickness of the amorphous silicon film: 48 nm) except the area over the metallic film than in the area (thickness: 30 nm) over the metallic film (the gate electrode 31), the maximum temperature of the surface of the film is substantially equal and the overall film can be uniformly crystallized. - Next, as shown in FIG. 3D,
electrodes source area 38 a and thedrain area 38 b in the N+ dopedpolycrystalline silicon film 38 by sputtering using argon (Ar) as sputtering gas. Next, achannel area 38 c in the N+ dopedpolycrystalline silicon film 38 is hydrogenated in hydrogen plasma to inactivate dangling bond and others. - As described above, according to the method of manufacturing a thin film transistor equivalent to this embodiment, as the thickness of a silicon film is set to a different value depending upon the state of a substrate (whether a metallic film is formed or not) when a
laser beam 37 is radiated for crystallization, the silicon film can be uniformly crystallized over the overall substrate and a film can be prevented from being broken. - The embodiments according to the present invention are described above, however, the present invention is not limited to the above embodiments and may be variously transformed. For example, in the above embodiments, a metallic film under a silicon film is a nickel film, however, it may be also formed by the other metallic film. In the above embodiments, a silicon film is used for an amorphous semiconductor film, however, the other amorphous film may be also used if only it can be crystallized by radiating an energy beam. Further, in the above embodiments, the present invention is applied to a method of manufacturing a thin film transistor, however, it may be also applied to a process for manufacturing the other semiconductor device. A method of forming amorphous semiconductor films different in thickness depending upon the structure of a substrate is not limited to the methods described in the above embodiments and the other method may be also used.
- As described above, according to the methods of manufacturing a semiconductor device according to the present invention, as the thickness of a semiconductor film is set to a different value depending upon the state of a substrate (whether a metallic film is formed or not) when an energy beam is radiated to crystallize the amorphous semiconductor film, the overall semiconductor film can be uniformly crystallized by radiating beams with the same energy. Therefore, there is effect that a film is never broken and a process margin can be increased.
Claims (15)
1. A method of manufacturing a semiconductor device, comprising:
a process for selectively forming a metallic film on a substrate;
a process for forming a semiconductor film over said substrate and metallic film; and
a process for crystallizing said semiconductor film by radiating an energy beam on said semiconductor film in a state in which said semiconductor film is thicker in an area over said substrate than in an area over said metallic film.
2. A method of manufacturing a semiconductor device according to claim 1 , wherein:
said semiconductor film is an amorphous semiconductor film.
3. A method of manufacturing a semiconductor device according to claim 1 , wherein:
said semiconductor film is a silicon film.
4. A method of manufacturing a semiconductor device according to claim 1 , wherein:
said semiconductor film is an amorphous silicon film.
5. A method of manufacturing a semiconductor device according to claim 1 , wherein:
said energy beam is an excimer laser beam.
6. A method of manufacturing a semiconductor device according to claim 1 , wherein:
the thickness of said semiconductor film in the area over said substrate and that in the area over said metallic film are selected in said process for polycrystallizing said semiconductor film by radiating said energy beam so that the maximum temperature in the respective areas of said semiconductor film is substantially equal.
7. A method of manufacturing a semiconductor device according to claim 1 , wherein:
a process for forming an insulating film on said substrate and said metallic film is included before said process for forming said semiconductor film and after said process for forming said metallic film.
8. A method of manufacturing a semiconductor device according to claim 7 , wherein:
the thickness of said insulating film, that in the area over said substrate of said semiconductor film and that in the area over said metallic film of said semiconductor film are selected in said process for polycrystallizing said semiconductor film by radiating said energy beam so that the maximum temperature in the respective areas of said semiconductor film is substantially equal.
9. A process of manufacturing a thin film transistor; comprising:
a process for forming a gate electrode on a part of a substrate wherein said gate electrode is a metallic film;
a process for forming an insulating film on said substrate and said gate electrode;
a process for forming a first semiconductor film with a uniform thickness on said insulating film;
a process for forming a lift-off film in an area corresponding to said gate electrode on said first semiconductor film wherein said lift-off film is a photoresist;
a process for forming a second semiconductor film with uniform thickness on said lift-off film and said first semiconductor film wherein said thickness is determined based on a material of said substrate;
a process for removing said lift-off film and said second semiconductor film on said lift-off film;
a process for uniformly crystallizing said first semiconductor film and a residual area of said second semiconductor film by radiating an energy beam with a set optimum value of energy required for crystallization; and
a process for forming source and drain electrodes in a particular position on said first and second semiconductor films.
10. A process of manufacturing a thin film transistor according to claim 9 , wherein:
said lift-off film formed in an area corresponding to said gate electrode by removing part of said lift-off film over areas not corresponding to said gate electrode and exposing a corresponding portion of said first semiconductor film using said gate electrode as a mask.
11. A process of manufacturing a thin film transistor according to claim 9 , wherein:
said second semiconductor film includes impurities.
12. A process of a thin film transistor, comprising:
a process for forming a gate electrode in a part on a substrate;
a process for forming an insulating film on said substrate and said gate electrode;
a process for forming a lift-off film in an area corresponding to said gate electrode on said insulating film;
a process for forming a first semiconductor film with uniform thickness on said lift-off film and said insulating film;
a process for removing said lift-off film and said first semiconductor film on said lift-off film;
a process for forming a second semiconductor film on the residual area of said first semiconductor film and said insulating film;
a process for crystallizing said first and second semiconductor films by radiating an energy beam; and
a process for forming source and drain electrodes in a predetermined position on said first and second semiconductor films.
13. A process of a thin film transistor according to claim 12 , wherein:
said lift-off film is formed in an area corresponding to said gate electrode by exposing from the side of said substrate using said gate electrode as a mask.
14. A process of a thin film transistor according to claim 12 , wherein:
said first semiconductor film includes impurities.
15. A method of manufacturing a semiconductor device, comprising:
a process for selectively forming a metallic film on a substrate;
a process for forming an insulating film on said substrate;
a process for forming a semiconductor film on said insulating film; and
a process for crystallizing said semiconductor film by radiating an energy beam on said semiconductor film, wherein:
the thickness of said semiconductor film in an area over said metallic film and that in an area in which said metallic film is not formed are selected so that the maximum temperature in the respective areas when said energy beam is radiated is substantially equal.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/449,028 US20030207507A1 (en) | 1996-07-31 | 2003-06-02 | Method of manufacturing a semiconductor device and a process of a thin film transistor |
US10/976,493 US20050085099A1 (en) | 1996-07-31 | 2004-10-29 | Method of manufacturing a semiconductor device and a process of a thin film transistor |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPP08-217754 | 1996-07-31 | ||
JP8217754A JPH1050607A (en) | 1996-07-31 | 1996-07-31 | Manufacture of semiconductor device |
US08/902,069 US6093586A (en) | 1996-07-31 | 1997-07-29 | Method of manufacturing a semiconductor device and a process of manufacturing a thin film transistor |
US50733500A | 2000-02-18 | 2000-02-18 | |
US10/449,028 US20030207507A1 (en) | 1996-07-31 | 2003-06-02 | Method of manufacturing a semiconductor device and a process of a thin film transistor |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US50733500A Division | 1996-07-31 | 2000-02-18 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/976,493 Division US20050085099A1 (en) | 1996-07-31 | 2004-10-29 | Method of manufacturing a semiconductor device and a process of a thin film transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
US20030207507A1 true US20030207507A1 (en) | 2003-11-06 |
Family
ID=16709230
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/902,069 Expired - Fee Related US6093586A (en) | 1996-07-31 | 1997-07-29 | Method of manufacturing a semiconductor device and a process of manufacturing a thin film transistor |
US10/449,028 Abandoned US20030207507A1 (en) | 1996-07-31 | 2003-06-02 | Method of manufacturing a semiconductor device and a process of a thin film transistor |
US10/976,493 Abandoned US20050085099A1 (en) | 1996-07-31 | 2004-10-29 | Method of manufacturing a semiconductor device and a process of a thin film transistor |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/902,069 Expired - Fee Related US6093586A (en) | 1996-07-31 | 1997-07-29 | Method of manufacturing a semiconductor device and a process of manufacturing a thin film transistor |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/976,493 Abandoned US20050085099A1 (en) | 1996-07-31 | 2004-10-29 | Method of manufacturing a semiconductor device and a process of a thin film transistor |
Country Status (5)
Country | Link |
---|---|
US (3) | US6093586A (en) |
EP (1) | EP0822581B1 (en) |
JP (1) | JPH1050607A (en) |
KR (1) | KR980012600A (en) |
DE (1) | DE69712684D1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060024866A1 (en) * | 2004-07-27 | 2006-02-02 | Feng-Yuan Gan | Thin film transistor and method for fabricating same |
US20060199316A1 (en) * | 2004-04-06 | 2006-09-07 | Cheng-Chang Kuo | Fabrication method of a low-temperature polysilicon thin film transistor |
Families Citing this family (14)
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KR100271813B1 (en) * | 1998-09-28 | 2000-11-15 | 구본준 | A method of crystallizing a silicon layer, a tft and a method thereof using the same |
KR100353526B1 (en) * | 1999-06-18 | 2002-09-19 | 주식회사 하이닉스반도체 | method for manufacturing semiconductor device |
JP3645755B2 (en) * | 1999-09-17 | 2005-05-11 | 日本電気株式会社 | Thin film transistor and manufacturing method thereof |
TW452892B (en) * | 2000-08-09 | 2001-09-01 | Lin Jing Wei | Re-crystallization method of polysilicon thin film of thin film transistor |
US7300829B2 (en) * | 2003-06-02 | 2007-11-27 | Applied Materials, Inc. | Low temperature process for TFT fabrication |
KR100585873B1 (en) * | 2003-11-03 | 2006-06-07 | 엘지.필립스 엘시디 주식회사 | Polycrystalline liquid crystal display device and fabfication method thereof |
KR100640213B1 (en) * | 2003-12-29 | 2006-10-31 | 엘지.필립스 엘시디 주식회사 | Fabrication method of polycrystalline liquid crystal display device |
TWI311213B (en) * | 2004-12-24 | 2009-06-21 | Au Optronics Corp | Crystallizing method for forming poly-si films and thin film transistors using same |
CN100388423C (en) * | 2005-01-17 | 2008-05-14 | 友达光电股份有限公司 | Manufacturing method of poly-silicon film |
US20060199314A1 (en) * | 2005-03-02 | 2006-09-07 | Chiun-Hung Chen | Thin film transistor, and method of fabricating thin film transistor and pixel structure |
KR101951707B1 (en) * | 2012-02-14 | 2019-02-26 | 삼성디스플레이 주식회사 | Method of planarizing substrate and method of manufacturing thin film transistor using the same |
US10038098B2 (en) * | 2014-11-07 | 2018-07-31 | Sakai Display Products Corporation | Method for manufacturing thin film transistor, thin film transistor and display panel |
JP6334057B2 (en) * | 2015-03-27 | 2018-05-30 | 堺ディスプレイプロダクト株式会社 | Thin film transistor and display panel |
WO2020101838A1 (en) * | 2018-11-16 | 2020-05-22 | Mattson Technology, Inc. | Chamber seasoning to improve etch uniformity by reducing chemistry |
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1996
- 1996-07-31 JP JP8217754A patent/JPH1050607A/en active Pending
-
1997
- 1997-07-09 DE DE69712684T patent/DE69712684D1/en not_active Expired - Lifetime
- 1997-07-09 EP EP97111673A patent/EP0822581B1/en not_active Expired - Lifetime
- 1997-07-29 US US08/902,069 patent/US6093586A/en not_active Expired - Fee Related
- 1997-07-30 KR KR1019970036045A patent/KR980012600A/en not_active Application Discontinuation
-
2003
- 2003-06-02 US US10/449,028 patent/US20030207507A1/en not_active Abandoned
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US5130263A (en) * | 1990-04-17 | 1992-07-14 | General Electric Company | Method for photolithographically forming a selfaligned mask using back-side exposure and a non-specular reflecting layer |
US5126701A (en) * | 1990-12-28 | 1992-06-30 | Raytheon Company | Avalanche diode limiters |
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US20060199316A1 (en) * | 2004-04-06 | 2006-09-07 | Cheng-Chang Kuo | Fabrication method of a low-temperature polysilicon thin film transistor |
US7338845B2 (en) * | 2004-04-06 | 2008-03-04 | Au Optronics Corporation | Fabrication method of a low-temperature polysilicon thin film transistor |
US20060024866A1 (en) * | 2004-07-27 | 2006-02-02 | Feng-Yuan Gan | Thin film transistor and method for fabricating same |
US7541229B2 (en) * | 2004-07-27 | 2009-06-02 | Au Optronics Corp. | Thin film transistor and method for fabricating same |
US20090212289A1 (en) * | 2004-07-27 | 2009-08-27 | Feng-Yuan Gan | Thin film transistor and method for fabricating same |
US7777231B2 (en) | 2004-07-27 | 2010-08-17 | Au Optronics Corp. | Thin film transistor and method for fabricating same |
Also Published As
Publication number | Publication date |
---|---|
EP0822581A2 (en) | 1998-02-04 |
US20050085099A1 (en) | 2005-04-21 |
DE69712684D1 (en) | 2002-06-27 |
US6093586A (en) | 2000-07-25 |
EP0822581B1 (en) | 2002-05-22 |
EP0822581A3 (en) | 1998-10-21 |
KR980012600A (en) | 1998-04-30 |
JPH1050607A (en) | 1998-02-20 |
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Owner name: SONY CORPORATION, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:GOSAIN, DHARAM PAL;WESTWATER, JONATHAN;NAKAGOE, MIYAKO;AND OTHERS;REEL/FRAME:014140/0675;SIGNING DATES FROM 19970918 TO 19970919 |
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