US20020019068A1 - Method and device for passive alignment - Google Patents

Method and device for passive alignment Download PDF

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Publication number
US20020019068A1
US20020019068A1 US09/862,461 US86246101A US2002019068A1 US 20020019068 A1 US20020019068 A1 US 20020019068A1 US 86246101 A US86246101 A US 86246101A US 2002019068 A1 US2002019068 A1 US 2002019068A1
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Prior art keywords
alignment
carrier
laser
structures
passive
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Abandoned
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US09/862,461
Inventor
Thomas Ericson
Paul Eriksen
Mats Granberg
Krister Frojd
Goran Palmskog
Pontus Lundstrom
Lennart Backlin
Christian Vjeider
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Telefonaktiebolaget LM Ericsson AB
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Individual
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Priority claimed from SE0001954A external-priority patent/SE0001954D0/en
Application filed by Individual filed Critical Individual
Assigned to TELEFONAKTIEBOLAGET LM ERICSSON (PUBL) reassignment TELEFONAKTIEBOLAGET LM ERICSSON (PUBL) ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BACKLIN, LENNART, GRANBERG, MATS, LUNDSTROM, PONTUS, PALMSKOG, GORAN, ERICSON, THOMAS, VJEIDER, CHRISTIAN, FROJD, KRISTER, ERIKSEN, PAUL
Publication of US20020019068A1 publication Critical patent/US20020019068A1/en
Priority to US11/177,493 priority Critical patent/US7317746B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/4228—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements
    • G02B6/423—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements using guiding surfaces for the alignment
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4249—Packages, e.g. shape, construction, internal or external details comprising arrays of active devices and fibres

Definitions

  • the present invention is related to a method and a device for precision and passive alignment such as a precision and passive alignment technology for low cost array fibre access components.
  • BCB benzocyclobutene
  • Silicon micromachining indiumphosfide (InP) laser diode array technology, benzocyclobutene (BCB) waveguides, passive alignments of laserdiode arrays to waveguides by self-aligning solder bumps, passive alignment of waveguide to an optical MT interface—micro replication technology and plastic encapsulation.
  • InP indiumphosfide
  • BCB benzocyclobutene
  • a laser carrier is passive aligned to an MT-interface using alignments structures on a low cost replicated carrier.
  • the laser carrier is based on a self-aligned semiconductor laser, flip-chip mounted on a silicon substrate with planar polymeric waveguides.
  • the concept for alignment according to the invention is shown in FIG. 1 with a front view of a laser carrier mounted on a polymeric carrier.
  • FIG. 1 is a front view of a laser carrier mounted on a polymeric carrier with the concept of an alignment according to the invention.
  • FIG. 2 is a top view of a laser carrier with alignment trenches adapted for the carrier structure according to the invention.
  • FIG. 3 is a front view of the polymer carrier according to the invention showing alignment structures in a mould insert and the formed polymeric carrier.
  • a laser carrier 1 comprises an edge-emitting SM laser array 2 passive aligned to the waveguides 3 on the carrier using AuSn, soldering bumps, se FIG. 2. This method of alignment has earlier been shown to give single mode precision; see reference /1/ and /2/. The alignment is achieved by the surface tension that is created of the bumps in the melted phase.
  • the planar waveguides 3 of for example BCB, see reference /3/, on the silicon substrate conduct the light from the laser array 2 to the edge of the carrier 1 , enabling a laser component without pigtail connection and with future waveguide functionality to be integrated.
  • trenches 4 are etched, see FIG. 2, into the outer parts of the carrier 1 preferably made by silicon.
  • the laser carrier 1 is then placed upside down on a polymeric carrier 5 and passively positioned to an MT-interface by fitting the alignment trenches 4 on the laser carrier to vertical alignment structures 6 and the waveguides 3 to horizontal alignment structures 7 on the polymeric carrier, see FIG. 1.
  • Polymeric carriers are preferably made by using replication technique, based on transfer moulding with micro structured silicon as a mould insert 8 , see FIG. 3 and reference /4/.
  • the mould insert comprises v-grooves of different sizes for the MT-interface, the vertical alignment and the horizontal alignment for later creating the vertical alignment structures 6 and the horizontal alignment structures 7 in the polymeric carrier.
  • a cavity can be formed behind the alignment structures in the polymeric carrier.
  • MT guiding holes 9 in the replicated carriers are made by placing the MT-guiding pins 10 on the mould insert during the replication step.
  • a lead frame may then be mounted on the backside of the laser carier and connected to the electrodes by wire bonding. This is done before the laser carrier is fixed to the polymer carrier by gluing. Finally, this package is encapsulated using transfer moulding and polished to achieve optical finish at the waveguide edge.
  • the laser array can have four laser channels, where signal electrodes can apear on the epitaxial side and be connected to the carrier when the laser array is flip-chip mounted.
  • the common ground electrode is wire bonded to the laser carrier.
  • the laser carrier was manufacturated using standard micro structuring technique with litography and dry etching on silicon. Electrodes were made by e-beam evaporation of Ti/Pt/Ni/Au and a lift-off technique. Gold and tin can then be electroplated through a photoresist mask as soldering bumps.
  • the planar BCB waveguide was built up by under- and overcladding layers, and in between a waveguiding core, se reference /3/. All these layers were deposited on the silsicon substrate by spinning deposition and the pattern of the waveguiding core was made in a lithography step. The end surface of the waveguide was also dry etched, thus creating a sharp edge of the waveguide. This was done in order to get good coupling efficiency from the laser into the waveguide core. Finally, alignment trenches were etched into the substrate using DRIE (Deep Reactive Ion Etching) with oxide as masking material.
  • DRIE Deep Reactive Ion Etching
  • Silicon wafers of (100) orientation was anisotropically etched in KOH (30 vol. %), for manufacturing the mould insert. Since the v-grooves for the MT-guiding pins consists of two levels, two separate litography steps were used with Si oxide and Si nitride as masking material. First the wider MT-structures were etched with nitride as masking material. After removing the nitride, the rest of the structures were etched with an underlying oxide mask. In order to create the building block, another silcon wafer was fusion bonded on top of this wafer, The building block structures were then etched out from this bonded wafer. All structures in the mould insert were compensated for a dimensional shrinkage of 0,629% of the polymeric material, see reference /4/.
  • the optical properties of the laser module can be tested with an integrating sphere and the IP-curve can be recorded for each individual channel.
  • the total shrinkage of the replicated structures after the transfer moulding was found to be about 0,69% when measuring the structures on both mold insert and replicated carrier with a profilometer.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
  • Manipulator (AREA)
  • Two-Way Televisions, Distribution Of Moving Picture Or The Like (AREA)

Abstract

The present invention is related to a method and device for precision and passive alignment such as precision and passive alignment technology for low cost array fibre access components. A laser carrier is passive aligned to an MT-interface using alignment structures on a replicated carrier. The laser carrier is based on a self-aligned semiconductor laser, flip-chip mounted on a silicon substrate with planar polymeric waveguides. The concept for the alignment according to the invention is shown in FIG. 1 as a front view of a laser carrier (1) mounted on a polymeric carrier (5).

Description

    TECHNICAL FIELD OF THE INVENTION
  • The present invention is related to a method and a device for precision and passive alignment such as a precision and passive alignment technology for low cost array fibre access components. [0001]
    • BACKGROUND OF THE INVENTION
  • A combination of microstructure technologies for silicon and polymer has been used to fabricate benzocyclobutene (BCB) waveguide FTTH array components with an MT-interface. Passive alignment structures have been used for both laser arrays, diodes and optical interfaces. [0002]
    • SUMMARY OF THE INVENTION
  • The broad band society demands substantially increased capacity in the telecommunication network. Today there is an unacceptable high cost for the components in the deployment of the optical single mode fibre to the end user. To reduce the cost the efforts has to be focused on array technology, passive alignment and plastic encapsulation. [0003]
  • The following technologies in a defined combination and sequence are the prerequisite to realize the low cost FTTH component described in hereinafter. Silicon micromachining, indiumphosfide (InP) laser diode array technology, benzocyclobutene (BCB) waveguides, passive alignments of laserdiode arrays to waveguides by self-aligning solder bumps, passive alignment of waveguide to an optical MT interface—micro replication technology and plastic encapsulation. [0004]
  • A laser carrier is passive aligned to an MT-interface using alignments structures on a low cost replicated carrier. The laser carrier is based on a self-aligned semiconductor laser, flip-chip mounted on a silicon substrate with planar polymeric waveguides. The concept for alignment according to the invention is shown in FIG. 1 with a front view of a laser carrier mounted on a polymeric carrier. [0005]
  • The novel concept for a low cost array laser component has thus been evaluated. It may be built on a passive alignment technology between a laser and a waveguide and between waveguides and an optical MT interface. It is feasible that the found process and the found process sequence will make it possible in the future to work and to meet the requirements for manufacturing cost effective commercial components with good optical properties. [0006]
  • The invention will now be described in more detail with reference to a preferred embodiment therof and also to the accompanying drawings.[0007]
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a front view of a laser carrier mounted on a polymeric carrier with the concept of an alignment according to the invention. [0008]
  • FIG. 2 is a top view of a laser carrier with alignment trenches adapted for the carrier structure according to the invention. [0009]
  • FIG. 3 is a front view of the polymer carrier according to the invention showing alignment structures in a mould insert and the formed polymeric carrier.[0010]
    • DETAILED DESCRIPTION OF A PREFERRED EMBODIMENT
  • A laser carrier [0011] 1 comprises an edge-emitting SM laser array 2 passive aligned to the waveguides 3 on the carrier using AuSn, soldering bumps, se FIG. 2. This method of alignment has earlier been shown to give single mode precision; see reference /1/ and /2/. The alignment is achieved by the surface tension that is created of the bumps in the melted phase. The planar waveguides 3 of for example BCB, see reference /3/, on the silicon substrate conduct the light from the laser array 2 to the edge of the carrier 1, enabling a laser component without pigtail connection and with future waveguide functionality to be integrated. For aligning the carrier 1 to an MT-interface alignment trenches 4 are etched, see FIG. 2, into the outer parts of the carrier 1 preferably made by silicon.
  • The laser carrier [0012] 1 is then placed upside down on a polymeric carrier 5 and passively positioned to an MT-interface by fitting the alignment trenches 4 on the laser carrier to vertical alignment structures 6 and the waveguides 3 to horizontal alignment structures 7 on the polymeric carrier, see FIG. 1. Polymeric carriers are preferably made by using replication technique, based on transfer moulding with micro structured silicon as a mould insert 8, see FIG. 3 and reference /4/. The mould insert comprises v-grooves of different sizes for the MT-interface, the vertical alignment and the horizontal alignment for later creating the vertical alignment structures 6 and the horizontal alignment structures 7 in the polymeric carrier. In order to make room for the laser array a cavity can be formed behind the alignment structures in the polymeric carrier. This is preferably done using a bonded building block on the mould insert. Quartz filled epoxy is used as polymer in order to achieve dimensional control and low thermal expansion of the replicated structures, see reference /4/ and /5/. MT guiding holes 9 in the replicated carriers, see FIG. 1, are made by placing the MT-guiding pins 10 on the mould insert during the replication step.
  • A lead frame may then be mounted on the backside of the laser carier and connected to the electrodes by wire bonding. This is done before the laser carrier is fixed to the polymer carrier by gluing. Finally, this package is encapsulated using transfer moulding and polished to achieve optical finish at the waveguide edge. [0013]
  • The laser array can have four laser channels, where signal electrodes can apear on the epitaxial side and be connected to the carrier when the laser array is flip-chip mounted. The common ground electrode is wire bonded to the laser carrier. [0014]
  • The laser carrier was manufacturated using standard micro structuring technique with litography and dry etching on silicon. Electrodes were made by e-beam evaporation of Ti/Pt/Ni/Au and a lift-off technique. Gold and tin can then be electroplated through a photoresist mask as soldering bumps. The planar BCB waveguide was built up by under- and overcladding layers, and in between a waveguiding core, se reference /3/. All these layers were deposited on the silsicon substrate by spinning deposition and the pattern of the waveguiding core was made in a lithography step. The end surface of the waveguide was also dry etched, thus creating a sharp edge of the waveguide. This was done in order to get good coupling efficiency from the laser into the waveguide core. Finally, alignment trenches were etched into the substrate using DRIE (Deep Reactive Ion Etching) with oxide as masking material. [0015]
  • Silicon wafers of (100) orientation was anisotropically etched in KOH (30 vol. %), for manufacturing the mould insert. Since the v-grooves for the MT-guiding pins consists of two levels, two separate litography steps were used with Si oxide and Si nitride as masking material. First the wider MT-structures were etched with nitride as masking material. After removing the nitride, the rest of the structures were etched with an underlying oxide mask. In order to create the building block, another silcon wafer was fusion bonded on top of this wafer, The building block structures were then etched out from this bonded wafer. All structures in the mould insert were compensated for a dimensional shrinkage of 0,629% of the polymeric material, see reference /4/. [0016]
  • The optical properties of the laser module can be tested with an integrating sphere and the IP-curve can be recorded for each individual channel. [0017]
  • The total shrinkage of the replicated structures after the transfer moulding was found to be about 0,69% when measuring the structures on both mold insert and replicated carrier with a profilometer. [0018]
  • It will be understood that the invention is not restricted to the aforedescribed and illustrated exemplifying embodiment thereof, and that modificatons can be made within the scope of the following claims. [0019]
    • REFERENCES
  • /1/ Ahlfeldt H, et al, “Passive alignment of laser arrays to single-mode fibers using microstructured silcon carriers”, Proc. of the Int. Conf. on Optical MEMS and their application (MOEMS'97), Nara, Japan, 1997,p. 155-159. [0020]
  • /2/ Hunziker W.,et al, “Low cost Packaging of Semiconductor Laser Arrays using Passive Self-Aligned Flip-chip Technique on Si motherboard”, Proc. of the 46[0021] th Electronic Components & Technology Conference, Orlando, Fla., 1996, p. 8-12.
  • /3/ Palmskog G., et al, “Low-cost single-mode optical passive coupler devices with an MT-interface-based on polymeric waveguides in BCB”, Proc, ECIO '97. 8[0022] th European Conference on Integrated Optics and Technical Exhibition, Opt. Soc. America, Washington, D.C., USA, 1997, p. 291-294.
  • /4/ Lundström, P, et al, “Precision Molding of Plastic Connectors Directly on Single-Mode Fibers”, Proc. 48[0023] th Electronic Components & Technology Conference, Seattle, Wash., 1998, p. 828-833.
  • /5/ Yokosuka E., et al, “multifiber Optical Components for Subscriber Networks”, Proc.. of the 46[0024] th Electronic Components & Technology Conference, Orlando, Fla., 1996, p. 487-493.

Claims (2)

1. Method for precision passive alignment such as a precision passive technology for a low cost array access component, characterized by providing alignment trenches in a laser carrier, providing vertical alignment structures and horizontal structures on a polymeric carrier and placing the laser carrier on the polymeric carrier, wherein the alignment trenches are provided to mate with the vertical alignment structures and the waveguides are provided to be aligned to the horizontal alignment when the laser carrier is placed on the polymeric carrier.
2. Device for precision passive alignment such as a precision passive technology for a low cost array fibre access component, characterized in that a laser carrier (1) is provided with alignment trenches (4), that a polymeric carrier (5) is provided with vertical alignment structures (6) and horizontal alignment structures (7), wherein the alignment trenches are provided to mate with the vertical alignment structures and the waveguides are provided to be aligned to the horizontal alignment when the laser carrier is placed on the polymeric carrier.
US09/862,461 2000-05-23 2001-05-23 Method and device for passive alignment Abandoned US20020019068A1 (en)

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SE0001954-7 2000-05-23
SE0001954A SE0001954D0 (en) 2000-05-23 2000-05-23 Passive alignment device
SE0100367-2 2001-02-06
SE0100367A SE519713C2 (en) 2000-05-23 2001-02-06 Passive alignment method and device

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US20030072338A1 (en) * 2001-10-12 2003-04-17 Masayuki Momiuchi Laser oscillation apparatus
US20070252289A1 (en) * 2003-07-25 2007-11-01 Hrl Laboratories, Llc Oriented self-location of microstructures with alignment structures
US10048450B2 (en) * 2016-03-28 2018-08-14 Cisco Technology, Inc. Alignment of optical components using nanomagnets
US11562984B1 (en) 2020-10-14 2023-01-24 Hrl Laboratories, Llc Integrated mechanical aids for high accuracy alignable-electrical contacts

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JP4699262B2 (en) * 2006-03-31 2011-06-08 京セラ株式会社 Optical waveguide connector, optical connection structure using the same, and optical waveguide connector manufacturing method
JP4754613B2 (en) * 2008-11-27 2011-08-24 日東電工株式会社 Opto-electric hybrid board and manufacturing method thereof
US8265436B2 (en) 2010-05-12 2012-09-11 Industrial Technology Research Institute Bonding system for optical alignment
JP6052815B2 (en) 2014-09-30 2016-12-27 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ Connector for waveguide and alignment method
US10852492B1 (en) * 2014-10-29 2020-12-01 Acacia Communications, Inc. Techniques to combine two integrated photonic substrates
US11585991B2 (en) 2019-02-28 2023-02-21 Teramount Ltd. Fiberless co-packaged optics
US10564374B2 (en) 2015-10-08 2020-02-18 Teramount Ltd. Electro-optical interconnect platform
US20230296853A9 (en) 2015-10-08 2023-09-21 Teramount Ltd. Optical Coupling
US9804334B2 (en) 2015-10-08 2017-10-31 Teramount Ltd. Fiber to chip optical coupler
US10048455B2 (en) * 2016-01-18 2018-08-14 Cisco Technology, Inc. Passive fiber array connector alignment to photonic chip
US10031299B2 (en) * 2016-05-27 2018-07-24 Corning Optical Communications LLC Silicon-based optical ports providing passive alignment connectivity
US10656339B2 (en) 2018-03-14 2020-05-19 Cisco Technology, Inc. Fiber to chip alignment using passive vgroove structures
US11500166B2 (en) * 2020-02-03 2022-11-15 Senko Advanced Components, Inc. Elastic averaging coupling

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US20030072338A1 (en) * 2001-10-12 2003-04-17 Masayuki Momiuchi Laser oscillation apparatus
US6687273B2 (en) * 2001-10-12 2004-02-03 Kabushiki Kaisha Topcon Laser oscillation apparatus
US20070252289A1 (en) * 2003-07-25 2007-11-01 Hrl Laboratories, Llc Oriented self-location of microstructures with alignment structures
US7622813B2 (en) * 2003-07-25 2009-11-24 Hrl Laboratories, Llc Oriented self-location of microstructures with alignment structures
US10048450B2 (en) * 2016-03-28 2018-08-14 Cisco Technology, Inc. Alignment of optical components using nanomagnets
US11562984B1 (en) 2020-10-14 2023-01-24 Hrl Laboratories, Llc Integrated mechanical aids for high accuracy alignable-electrical contacts

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CA2380240A1 (en) 2001-11-29
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SE0100367L (en) 2001-11-26
US20060007972A1 (en) 2006-01-12
WO2001090794A1 (en) 2001-11-29
AU6094201A (en) 2001-12-03
SE519713C2 (en) 2003-04-01
CA2380240C (en) 2011-05-03
DE60142832D1 (en) 2010-09-30
US7317746B2 (en) 2008-01-08
EP1290481B1 (en) 2010-08-18
ATE478356T1 (en) 2010-09-15
CN1380987A (en) 2002-11-20
JP2003534568A (en) 2003-11-18
JP4808900B2 (en) 2011-11-02
KR100902433B1 (en) 2009-06-11
SE0100367D0 (en) 2001-02-06

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