US20010051216A1 - Corrosion resistant coating - Google Patents
Corrosion resistant coating Download PDFInfo
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- US20010051216A1 US20010051216A1 US09/428,140 US42814099A US2001051216A1 US 20010051216 A1 US20010051216 A1 US 20010051216A1 US 42814099 A US42814099 A US 42814099A US 2001051216 A1 US2001051216 A1 US 2001051216A1
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- coating
- magnesium fluoride
- component part
- density
- fluoride coating
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- 238000000576 coating method Methods 0.000 title claims abstract description 114
- 239000011248 coating agent Substances 0.000 title claims abstract description 111
- 230000007797 corrosion Effects 0.000 title claims abstract description 18
- 238000005260 corrosion Methods 0.000 title claims abstract description 18
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims abstract description 41
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims abstract description 41
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 13
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 12
- 239000011737 fluorine Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 32
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 13
- 239000000919 ceramic Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 16
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract description 10
- 239000011253 protective coating Substances 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 description 34
- 238000000151 deposition Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 239000000356 contaminant Substances 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000009834 vaporization Methods 0.000 description 3
- 230000008016 vaporization Effects 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- -1 e.g. Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0694—Halides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32559—Protection means, e.g. coatings
Definitions
- the invention relates generally to a corrosion resistant coating, and in particular, to a coating for use on a component in a corrosive environment of a semiconductor wafer processing system.
- a processing chamber In a semiconductor wafer processing system, the interior of a processing chamber is often exposed to a variety of corrosive or reactive environments. These reactive environments may result from either corrosive stable gases, e.g., chlorine (Cl 2 ), or other reactive species, including radicals or by-products generated from process reactions. In plasma process applications such as etching or chemical vapor deposition (CVD), reactive species are also generated through dissociation of other molecules, which by themselves, may or may not be corrosive or reactive. Corrosion resistant measures are needed to ensure process performance and durability of the process chamber or component parts. Nickel-plated components, for example, are often used in process chambers to prevent corrosion from Cl 2 .
- corrosive stable gases e.g., chlorine (Cl 2 )
- reactive species In plasma process applications such as etching or chemical vapor deposition (CVD), reactive species are also generated through dissociation of other molecules, which by themselves, may or may not be corrosive or reactive.
- Fluorine-containing gases such as NF 3 or CHF 3 , among others, give rise to atomic fluorine (F) which is highly reactive. Corrosion becomes even worse under high temperature environments, such as those encountered in certain CVD applications.
- Ceramic heaters made of aluminum nitride (AlN) are attacked by NF 3 , which is often used as a cleaning gas in some wafer processing systems. These heaters are typically rather expensive, and it is desirable to have protective coatings which can prevent corrosion of the heater surfaces.
- the present invention provides a protective coating upon a component part for use in a corrosive or reactive environment.
- the protective coating comprises magnesium fluoride that is sufficiently pure to avoid reactions between contaminants in the coating and reactive species in the surrounding environment. Furthermore, the coating is sufficiently dense to preclude reactive species from penetrating the coating and reaching the underlying component part.
- the magnesium fluoride coating is at least 85% dense, e.g., about 85-90% dense, and at least 99% pure. Such a coating, for example, protects a ceramic heater surface against chemical attack by fluorine radicals in a high temperature corrosive environment.
- the component part e.g., aluminum nitride heater
- the component part is provided with a surface finish better than about 10 RA, or preferably, between 5-10 RA.
- the coating formed upon such a component part is more uniform, and thus provides more effective protection against corrosion.
- Another aspect of the invention is a method of forming the coating at a temperature and pressure that are appropriate for the desired coating density and purity.
- the coating be formed at a relatively high temperature and relatively low pressure.
- a high deposition temperature tends to yield a higher density coating, while a low pressure results in a coating with a higher purity.
- the coating is deposited at a temperature of at least about 250° C., or preferably at least about 300° C., and a chamber pressure of lower than about 1 ⁇ 10 ⁇ 5 torr. Further improvement in the coating characteristics can be achieved by annealing the coating at a temperature greater than about 600° C.
- FIG. 1 a depicts a schematic cross-sectional view of a substrate exposed to a corrosive environment
- FIG. 1 b depicts a schematic cross-sectional view of a coating of the present invention formed upon a substrate
- FIG. 2 a depicts a schematic cross-sectional view of a coating upon a substrate having a rough surface finish
- FIG. 2 b depicts a schematic cross-sectional view of a coating upon a substrate having a finer surface finish
- FIG. 3 depicts a schematic diagram of a chamber with a support pedestal having a coating of the present invention.
- FIGS. 1 a - b schematically illustrate the protective effect of a coating 150 upon a substrate 100 .
- FIG. 1 a depicts a cross-sectional view of a substrate 100 exposed to a generally corrosive or reactive environment 110 .
- the substrate 100 may be subjected to attack by species in the surrounding environment 110 , resulting in pits 102 or other defects 104 on the surface 100 S of the substrate 100 .
- FIG. 1 b illustrates a cross-sectional view of the substrate 100 being exposed to the corrosive environment 110 after a coating 150 has been formed upon the substrate 100 .
- the coating 150 of the present invention is resistant to attack by the reactive or corrosive environment 110 , and deterioration of the underlying substrate 100 can be reduced or avoided.
- the coating 150 comprises magnesium fluoride, which is used to coat interior surfaces of chemical vapor deposition (CVD) chambers and/or component parts used in such chambers.
- the inventive coating 150 is advantageously applied to aluminum or aluminum nitride parts such as the heaters conventionally employed within CVD chambers.
- Aluminum and aluminum nitride typically corrode and deteriorate with time when they are repeatedly exposed to high temperature CVD process environments.
- the coating 150 prevents corrosion of the heater surface under a corrosive environment, e.g., in the presence of a plasma containing fluorine (F), at temperatures above 550° C.
- the magnesium fluoride coating 150 should be sufficiently pure so as to substantially eliminate reactions between contaminants in the coating 150 and various species in the surrounding environment 110 .
- the type of contaminants varies with the specific process used in forming the coating 150 .
- the magnesium fluoride coating 150 may be formed by high temperature evaporation of magnesium fluoride crystals contained in a crucible, or by sputtering a magnesium fluoride target using an inert gas, e.g., argon (Ar), nitrogen (N 2 ) , and the like.
- Contaminants in the coating 150 may include impurities from the sputtering target, impurities from the crucible, e.g., alumina (Al 2 O 3 ), or impurities such as water vapor in the process chamber, among others. It is desirable that the purity of the magnesium fluoride coating, e.g., (sum of weights of magnesium and fluorine)/(sum of weights of magnesium and fluorine + sum of weights of all impurities), is at least 99% and, more preferably, as close to 100% as possible.
- the coating 150 should be sufficiently dense to substantially prevent species in the corrosive environment 110 from penetrating through porous regions of the coating 150 , and attacking the underlying substrate 100 .
- the density of the magnesium fluoride coating can be defined as: volume of magnesium fluoride in the coating/total volume of (voids plus magnesium fluoride plus other impurities) in the coating. A higher density tends to reduce the probability of exposing the underlying part (e.g., AlN) to attack by corrosive gases.
- the density of the magnesium fluoride coating 150 is desirably at least 85%, or more preferably, at least about 95%, or close to about 100%.
- the magnesium fluoride coating 150 is preferably deposited by CVD or by physical vapor deposition (PVD).
- the coating 150 has, for example, a thickness of less than about 2 ⁇ m, or preferably, about 1 ⁇ m or less.
- Such a magnesium fluoride coating 150 has been found to resist corrosion in environments containing dissociated NF 3 (e.g., environments containing fluorine radicals) and having temperatures above 550° C.
- FIG. 3 illustrates one embodiment of the present invention, in which the magnesium fluoride coating 150 is formed upon a support pedestal 310 .
- the support pedestal 310 is a ceramic heater made of aluminum nitride (AlN).
- AlN heater 310 for example, is often used in a wafer processing system 350 , such as a CVD chamber, for heating a wafer (not shown) to a high processing temperature. Any exposed surface of the AlN heater 310 is susceptible to attack upon exposure to a corrosive environment 110 —e.g., components in the process gases, or a plasma containing a chamber cleaning gas such as NF 3 .
- oxide is deposited both on the surface of a wafer, as well as upon the interior surfaces 352 of the chamber 350 and other component parts, e.g., heater 310 , inside the chamber 350 .
- oxide deposits must be removed from the interior chamber surfaces 352 and component parts. This is typically achieved via a cleaning step that employs a fluorine-containing gas such as NF 3 to etch away the oxide deposits.
- the magnesium fluoride coating 150 of the present invention is resistant to attack (either chemically or physically) by many reactive species within a CVD process environment, and is therefore effective as a protective coating for use with ceramic heaters in general.
- a magnesium fluoride coating 150 has been successfully used to avoid deterioration of an aluminum nitride heater 310 in the presence of a plasma containing fluorine (F), at temperatures above 550° C.
- Another aspect of the invention includes a method of making parts for use within a corrosive environment.
- the method comprises coating each part, or substrate, with a substantially dense (e.g., greater than about 85%) and substantially pure magnesium fluoride coating, preferably deposited by CVD or PVD.
- a coating having a relatively high density is less vulnerable to attack by corrosive or reactive species.
- a relatively high deposition temperature is preferred because it results in a denser coating, along with improved conformality and adhesion characteristics.
- the coating 150 is deposited at a temperature of at least about 300° C.
- the temperature may be somewhat lower, e.g., at least 250° C., or about 275° C.
- the magnesium fluoride coating 150 may be formed by different processes, including for example, high temperature evaporation and sputtering (e.g., PVD). However, the specific coating process is not critical to the practice of the present invention, as long as the process result in a sufficiently dense and pure coating 150 . For example, electron beam vaporization has been used in forming a magnesium fluoride coating over an AlN heater. In other applications, however, conformal deposition—e.g., using CVD, may be desirable in order to ensure complete coverage, or protection, for substrates with topography.
- high temperature evaporation and sputtering e.g., PVD
- the specific coating process is not critical to the practice of the present invention, as long as the process result in a sufficiently dense and pure coating 150 .
- electron beam vaporization has been used in forming a magnesium fluoride coating over an AlN heater.
- conformal deposition e.g., using CVD, may be desirable in order to ensure complete coverage, or protection, for substrates
- a magnesium fluoride coating When a magnesium fluoride coating is deposited using electron beam vaporization, it is typically performed at a temperature of about 250° C. and a pressure of about 1 ⁇ 10 ⁇ 5 torr. The resulting coating has a columnar structure, and is about 70-80% dense. As such, corrosive gases are able to penetrate the relatively porous coating and attack the underlying substrate.
- a magnesium fluoride coating 150 is formed, using electron beam vaporization, at a temperature greater than about 300° C.
- the resulting coating 150 has a higher density, e.g., close to 100%, and is less porous than coatings deposited at lower temperatures. As such, the improved coating provides better protection for the underlying substrate in corrosive environments.
- the columnar structure of the resulting coating may also be avoided by using other deposition techniques such as sputtering.
- sputtering since the species sputtered from the target are relatively energetic, a sufficiently dense film can be formed at a lower temperature compared to other techniques such as evaporation or CVD. Nonetheless, a PVD coating can still benefit from a higher temperature process, which leads to a more conformal and robust film resulting, for example, from improved bonding among the deposited species.
- a magnesium fluoride coating 150 deposited at a lower density can also be densified by thermal annealing at a temperature greater than about 600° C.
- densification can be achieved by thermal annealing at about 600° C. for 10 hrs. at a pressure of about 700 torr in an inert nitrogen (N 2 ) atmosphere.
- N 2 inert nitrogen
- Other inert gases, such as argon (Ar), among others, may also be used. Aside from densification, thermal annealing of the coating also improves the conformality of the coating.
- the coating 150 is deposited at the temperatures described above and at a chamber pressure of at least 1 ⁇ 10 ⁇ 5 torr—i.e., preferably a reduced pressure environment of lower than 1 ⁇ 10 ⁇ 5 torr.
- a chamber pressure of 1 ⁇ 10 ⁇ 6 torr provides an environment containing fewer contaminants than at 10 ⁇ 5 torr, and therefore results in a coating having a higher purity.
- this improvement in coating purity with decreasing pressure becomes less significant at higher deposition temperatures because the denser coating obtained at a higher deposition temperature has fewer porous regions where contaminants (e.g., moisture) may lodge.
- a process for depositing the magnesium fluoride coating 150 will preferably balance temperature and pressure to achieve the desired purity and density. It will be understood, that in order to resist corrosion when the part (e.g., comprising the coating 150 and substrate 100 ) is exposed to the corrosive environment 110 , the coating 150 should cover all surfaces 100 S of the substrate 100 , that can potentially be exposed to the corrosive environment 110 .
- the characteristics of the coating 150 is also affected by the surface finish of the substrate 100 .
- the surface finish of the substrate 100 For example, if the surface 100 S of the substrate 100 is too rough, then the resulting coating thickness is non-uniform. As such, the underlying substrate 100 becomes vulnerable to attack when exposed to a corrosive environment 110 .
- a ceramic heater typically has a surface finish with a roughness measure of greater than RA20. (For the surface roughness scale, RA20 means that surface “bumps” are about 20 microinches from the average surface.)
- FIG. 2 a illustrates a magnesium fluoride coating 150 upon a substrate 200 such as a heater, with a rough surface 200 S.
- the magnesium fluoride coating 150 is relatively non-uniform, resulting in exposed portions 202 of the heater 200 .
- portions 152 of the coating 150 may also be too thin to be effective in protecting underlying portions 204 of the heater 200 against penetration by reactive or energetic species in the corrosive environment 110 .
- regions 202 , 204 of the heater 200 are vulnerable to the corrosive environment 110 , resulting in the formation of pits 206 or other defects 208 .
- the underlying heater 200 has a finer surface finish, then both the quality of the coating-substrate interface and the coating uniformity can be improved.
- the coating 150 formed upon a heater 200 with a smoother surface finish provides effective protection against the reactive environment 110 .
- a substrate e.g., AlN heater
- a grain size of less than about 30 ⁇ m is desirable, and in one preferred embodiment, a grain size of about 1-3 ⁇ m is used.
- the surface finish can further be improved, for example, by appropriate polishing techniques.
- an optimal surface finish of the substrate surface 200 is less than about RA10, and preferably even lower, e.g., about RA5.
- the expense also increases with iterative polishing. Therefore, in practice, a surface finish of about RA10, or slightly higher, is recommended.
- the improvement in the coating-substrate interface leads to better adhesion between the coating 150 and the substrate 200 , and a coating uniformity of about 50% is typically obtained.
Abstract
A corrosion resistant part comprising a protective coating formed upon a component part. The protective coating comprises magnesium fluoride, which is substantially pure and substantially dense. Preferably, the coating is at least about 99% pure and at least about 85% dense. For example, such a coating can be formed upon the component part at a temperature of at least about 250° C. and a pressure of not more than about 1×10−5 torr. The resulting coating is effective in protecting the surfaces of an aluminum nitride heater against corrosion within a fluorine-containing environment inside a chemical vapor deposition chamber.
Description
- This application claims priority to U.S. provisional application serial No. 60/106,530, entitled “Improved Corrosion Resistant Coating,” filed on Oct. 31, 1998, which is herein incorporated by reference. This application is related to commonly-assigned U.S. patent application Ser. No. ______, (Attorney Docket 2929) entitled “Corrosion Resistant Coating,” filed simultaneously herewith; which is herein incorporated by reference.
- 1. Field of the Invention
- The invention relates generally to a corrosion resistant coating, and in particular, to a coating for use on a component in a corrosive environment of a semiconductor wafer processing system.
- 2. Description of the Background Art
- In a semiconductor wafer processing system, the interior of a processing chamber is often exposed to a variety of corrosive or reactive environments. These reactive environments may result from either corrosive stable gases, e.g., chlorine (Cl2), or other reactive species, including radicals or by-products generated from process reactions. In plasma process applications such as etching or chemical vapor deposition (CVD), reactive species are also generated through dissociation of other molecules, which by themselves, may or may not be corrosive or reactive. Corrosion resistant measures are needed to ensure process performance and durability of the process chamber or component parts. Nickel-plated components, for example, are often used in process chambers to prevent corrosion from Cl2. Fluorine-containing gases such as NF3 or CHF3, among others, give rise to atomic fluorine (F) which is highly reactive. Corrosion becomes even worse under high temperature environments, such as those encountered in certain CVD applications. For example, ceramic heaters made of aluminum nitride (AlN) are attacked by NF3, which is often used as a cleaning gas in some wafer processing systems. These heaters are typically rather expensive, and it is desirable to have protective coatings which can prevent corrosion of the heater surfaces.
- Therefore, a need exists in the art to provide corrosion resistant coatings that can protect process components, such as ceramic heaters, from corrosion within wafer processing systems.
- The present invention provides a protective coating upon a component part for use in a corrosive or reactive environment. The protective coating comprises magnesium fluoride that is sufficiently pure to avoid reactions between contaminants in the coating and reactive species in the surrounding environment. Furthermore, the coating is sufficiently dense to preclude reactive species from penetrating the coating and reaching the underlying component part. In one embodiment, the magnesium fluoride coating is at least 85% dense, e.g., about 85-90% dense, and at least 99% pure. Such a coating, for example, protects a ceramic heater surface against chemical attack by fluorine radicals in a high temperature corrosive environment.
- In another preferred embodiment, the component part (e.g., aluminum nitride heater) is provided with a surface finish better than about 10 RA, or preferably, between 5-10 RA. The coating formed upon such a component part is more uniform, and thus provides more effective protection against corrosion.
- The quality of the protective coating is also affected by the process condition of the deposition. Therefore, another aspect of the invention is a method of forming the coating at a temperature and pressure that are appropriate for the desired coating density and purity. In general, it is preferable that the coating be formed at a relatively high temperature and relatively low pressure. A high deposition temperature tends to yield a higher density coating, while a low pressure results in a coating with a higher purity. In one preferred embodiment, the coating is deposited at a temperature of at least about 250° C., or preferably at least about 300° C., and a chamber pressure of lower than about 1×10−5 torr. Further improvement in the coating characteristics can be achieved by annealing the coating at a temperature greater than about 600° C.
- The teachings of the present invention can readily be understood by considering the following detailed description in conjunction with the accompanying drawings, in which:
- FIG. 1a depicts a schematic cross-sectional view of a substrate exposed to a corrosive environment;
- FIG. 1b depicts a schematic cross-sectional view of a coating of the present invention formed upon a substrate;
- FIG. 2a depicts a schematic cross-sectional view of a coating upon a substrate having a rough surface finish;
- FIG. 2b depicts a schematic cross-sectional view of a coating upon a substrate having a finer surface finish; and
- FIG. 3 depicts a schematic diagram of a chamber with a support pedestal having a coating of the present invention.
- To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures.
- The present invention relates to a fluorine-containing coating that protects an underlying substrate (i.e., the object on which the coating is deposited) or component part from corrosion or deterioration within a corrosive environment. FIGS. 1a-b schematically illustrate the protective effect of a
coating 150 upon asubstrate 100. FIG. 1a depicts a cross-sectional view of asubstrate 100 exposed to a generally corrosive orreactive environment 110. For example, thesubstrate 100 may be subjected to attack by species in the surroundingenvironment 110, resulting inpits 102 orother defects 104 on the surface 100S of thesubstrate 100. Depending on thereactive environment 110, deterioration of thesubstrate 100 may be caused by chemical or physical attacks, and may not necessarily result in readily visible defects such as those illustrated in FIG. 1a. For example, chemical or physical characteristics of thesubstrate 100 may be altered by chemical reactions between species such as fluorine F, or other reactive species (denoted generally as X) in theenvironment 110 and thesubstrate 100, or by physical bombardment of energetic species (e.g., + and − ions). FIG. 1b illustrates a cross-sectional view of thesubstrate 100 being exposed to thecorrosive environment 110 after acoating 150 has been formed upon thesubstrate 100. Thecoating 150 of the present invention is resistant to attack by the reactive orcorrosive environment 110, and deterioration of theunderlying substrate 100 can be reduced or avoided. - In one embodiment of the invention, the
coating 150 comprises magnesium fluoride, which is used to coat interior surfaces of chemical vapor deposition (CVD) chambers and/or component parts used in such chambers. For example, theinventive coating 150 is advantageously applied to aluminum or aluminum nitride parts such as the heaters conventionally employed within CVD chambers. Aluminum and aluminum nitride typically corrode and deteriorate with time when they are repeatedly exposed to high temperature CVD process environments. Thecoating 150 prevents corrosion of the heater surface under a corrosive environment, e.g., in the presence of a plasma containing fluorine (F), at temperatures above 550° C. - To be an effective protective coating in a
corrosive environment 110, themagnesium fluoride coating 150 should be sufficiently pure so as to substantially eliminate reactions between contaminants in thecoating 150 and various species in the surroundingenvironment 110. The type of contaminants varies with the specific process used in forming thecoating 150. For example, themagnesium fluoride coating 150 may be formed by high temperature evaporation of magnesium fluoride crystals contained in a crucible, or by sputtering a magnesium fluoride target using an inert gas, e.g., argon (Ar), nitrogen (N2) , and the like. Contaminants in thecoating 150 may include impurities from the sputtering target, impurities from the crucible, e.g., alumina (Al2O3), or impurities such as water vapor in the process chamber, among others. It is desirable that the purity of the magnesium fluoride coating, e.g., (sum of weights of magnesium and fluorine)/(sum of weights of magnesium and fluorine + sum of weights of all impurities), is at least 99% and, more preferably, as close to 100% as possible. - Furthermore, the
coating 150 should be sufficiently dense to substantially prevent species in thecorrosive environment 110 from penetrating through porous regions of thecoating 150, and attacking theunderlying substrate 100. The density of the magnesium fluoride coating can be defined as: volume of magnesium fluoride in the coating/total volume of (voids plus magnesium fluoride plus other impurities) in the coating. A higher density tends to reduce the probability of exposing the underlying part (e.g., AlN) to attack by corrosive gases. Thus, while a coating density of about 70-80% is sufficient to protect theunderlying substrate 100, the density of themagnesium fluoride coating 150 is desirably at least 85%, or more preferably, at least about 95%, or close to about 100%. Furthermore, to avoid cracking of thecoating 150, a thinner coating is generally preferred, while a moreconformal coating 150 provides improved protection of the underlying substrate. To achieve these characteristics, themagnesium fluoride coating 150 is preferably deposited by CVD or by physical vapor deposition (PVD). Thecoating 150 has, for example, a thickness of less than about 2 μm, or preferably, about 1 μm or less. Such amagnesium fluoride coating 150, for example, has been found to resist corrosion in environments containing dissociated NF3 (e.g., environments containing fluorine radicals) and having temperatures above 550° C. - FIG. 3 illustrates one embodiment of the present invention, in which the
magnesium fluoride coating 150 is formed upon asupport pedestal 310. In particular, thesupport pedestal 310 is a ceramic heater made of aluminum nitride (AlN). AnAlN heater 310, for example, is often used in a wafer processing system 350, such as a CVD chamber, for heating a wafer (not shown) to a high processing temperature. Any exposed surface of theAlN heater 310 is susceptible to attack upon exposure to acorrosive environment 110—e.g., components in the process gases, or a plasma containing a chamber cleaning gas such as NF3. In a CVD chamber configured for oxide (e.g., SiO2) deposition, oxide is deposited both on the surface of a wafer, as well as upon theinterior surfaces 352 of the chamber 350 and other component parts, e.g.,heater 310, inside the chamber 350. To maintain efficient process and chamber operation, the oxide deposits must be removed from the interior chamber surfaces 352 and component parts. This is typically achieved via a cleaning step that employs a fluorine-containing gas such as NF3 to etch away the oxide deposits. Themagnesium fluoride coating 150 of the present invention is resistant to attack (either chemically or physically) by many reactive species within a CVD process environment, and is therefore effective as a protective coating for use with ceramic heaters in general. For example, amagnesium fluoride coating 150 has been successfully used to avoid deterioration of analuminum nitride heater 310 in the presence of a plasma containing fluorine (F), at temperatures above 550° C. - Another aspect of the invention includes a method of making parts for use within a corrosive environment. The method comprises coating each part, or substrate, with a substantially dense (e.g., greater than about 85%) and substantially pure magnesium fluoride coating, preferably deposited by CVD or PVD.
- In general, a coating having a relatively high density is less vulnerable to attack by corrosive or reactive species. As such, a relatively high deposition temperature is preferred because it results in a denser coating, along with improved conformality and adhesion characteristics. To achieve a
magnesium fluoride coating 150 having close to 100% density, thecoating 150 is deposited at a temperature of at least about 300° C. However, for coating densities in the 85-90% range, the temperature may be somewhat lower, e.g., at least 250° C., or about 275° C. - The
magnesium fluoride coating 150 may be formed by different processes, including for example, high temperature evaporation and sputtering (e.g., PVD). However, the specific coating process is not critical to the practice of the present invention, as long as the process result in a sufficiently dense andpure coating 150. For example, electron beam vaporization has been used in forming a magnesium fluoride coating over an AlN heater. In other applications, however, conformal deposition—e.g., using CVD, may be desirable in order to ensure complete coverage, or protection, for substrates with topography. - When a magnesium fluoride coating is deposited using electron beam vaporization, it is typically performed at a temperature of about 250° C. and a pressure of about 1×10−5 torr. The resulting coating has a columnar structure, and is about 70-80% dense. As such, corrosive gases are able to penetrate the relatively porous coating and attack the underlying substrate. By contrast, in one embodiment of the present invention, a
magnesium fluoride coating 150 is formed, using electron beam vaporization, at a temperature greater than about 300° C. The resultingcoating 150 has a higher density, e.g., close to 100%, and is less porous than coatings deposited at lower temperatures. As such, the improved coating provides better protection for the underlying substrate in corrosive environments. Alternatively, the columnar structure of the resulting coating may also be avoided by using other deposition techniques such as sputtering. In the case of PVD, since the species sputtered from the target are relatively energetic, a sufficiently dense film can be formed at a lower temperature compared to other techniques such as evaporation or CVD. Nonetheless, a PVD coating can still benefit from a higher temperature process, which leads to a more conformal and robust film resulting, for example, from improved bonding among the deposited species. - In another embodiment, a
magnesium fluoride coating 150 deposited at a lower density (e.g., at a lower temperature) can also be densified by thermal annealing at a temperature greater than about 600° C. For example, densification can be achieved by thermal annealing at about 600° C. for 10 hrs. at a pressure of about 700 torr in an inert nitrogen (N2) atmosphere. Other inert gases, such as argon (Ar), among others, may also be used. Aside from densification, thermal annealing of the coating also improves the conformality of the coating. - To achieve the desired purity, e.g., about 99%, the
coating 150 is deposited at the temperatures described above and at a chamber pressure of at least 1×10−5 torr—i.e., preferably a reduced pressure environment of lower than 1×10−5 torr. A chamber pressure of 1×10−6 torr provides an environment containing fewer contaminants than at 10−5 torr, and therefore results in a coating having a higher purity. However, this improvement in coating purity with decreasing pressure becomes less significant at higher deposition temperatures because the denser coating obtained at a higher deposition temperature has fewer porous regions where contaminants (e.g., moisture) may lodge. Therefore, at sufficiently high deposition temperatures, lowering the chamber pressure may not produce a corresponding increase in coating purity. Accordingly, a process for depositing themagnesium fluoride coating 150 will preferably balance temperature and pressure to achieve the desired purity and density. It will be understood, that in order to resist corrosion when the part (e.g., comprising thecoating 150 and substrate 100) is exposed to thecorrosive environment 110, thecoating 150 should cover all surfaces 100S of thesubstrate 100, that can potentially be exposed to thecorrosive environment 110. - Aside from the deposition process conditions (e.g., substrate temperature, chamber pressure, among others), the characteristics of the
coating 150 is also affected by the surface finish of thesubstrate 100. For example, if the surface 100S of thesubstrate 100 is too rough, then the resulting coating thickness is non-uniform. As such, theunderlying substrate 100 becomes vulnerable to attack when exposed to acorrosive environment 110. A ceramic heater typically has a surface finish with a roughness measure of greater than RA20. (For the surface roughness scale, RA20 means that surface “bumps” are about 20 microinches from the average surface.) FIG. 2a illustrates amagnesium fluoride coating 150 upon asubstrate 200 such as a heater, with a rough surface 200S. Themagnesium fluoride coating 150 is relatively non-uniform, resulting in exposedportions 202 of theheater 200. Alternatively,portions 152 of thecoating 150 may also be too thin to be effective in protectingunderlying portions 204 of theheater 200 against penetration by reactive or energetic species in thecorrosive environment 110. As such,regions heater 200 are vulnerable to thecorrosive environment 110, resulting in the formation ofpits 206 orother defects 208. However, if theunderlying heater 200 has a finer surface finish, then both the quality of the coating-substrate interface and the coating uniformity can be improved. As shown in FIG. 2b, thecoating 150 formed upon aheater 200 with a smoother surface finish provides effective protection against thereactive environment 110. - Therefore, a substrate (e.g., AlN heater) having a small grain size of less than about 30 μm is desirable, and in one preferred embodiment, a grain size of about 1-3 μm is used. The surface finish can further be improved, for example, by appropriate polishing techniques. Illustratively, an optimal surface finish of the
substrate surface 200 is less than about RA10, and preferably even lower, e.g., about RA5. In general, it is desirable to have as fine a surface finish as possible. However, the expense also increases with iterative polishing. Therefore, in practice, a surface finish of about RA10, or slightly higher, is recommended. The improvement in the coating-substrate interface leads to better adhesion between thecoating 150 and thesubstrate 200, and a coating uniformity of about 50% is typically obtained. - The specific embodiments disclosed for use with CVD chambers under high temperature conditions are meant to be illustrative only. The present invention is generally applicable to other corrosive environments, such as those commonly encountered in etching, plasma or reactive processes.
- Although various embodiments which incorporate the teachings of the present invention have been shown and described in detail herein, those skilled in the art can readily devise many other varied embodiments that still incorporate these teachings.
Claims (21)
1. Apparatus for use within a corrosive semiconductor device process comprising:
a component part having a surface; and
a magnesium fluoride coating deposited upon said surface of said component part; wherein said magnesium fluoride coating has a density of at least about 85% and a purity of at least about 99%.
2. The apparatus as in , wherein said magnesium fluoride coating has a density of between 85% to 90%.
claim 1
3. The apparatus as in , wherein said magnesium fluoride coating has a density of about 100%.
claim 1
4. The apparatus as in , wherein said surface of said component part has a surface finish of less than about 10 RA.
claim 1
5. The apparatus as in , wherein said magnesium fluoride coating is formed upon said surface of said component part at a temperature of at least about 250° C.
claim 1
6. The apparatus as in , wherein said magnesium fluoride coating is formed at a pressure of lower than about 1×10−5 torr.
claim 1
7. The apparatus as in , wherein said magnesium fluoride coating is annealed at a temperature of greater than about 600° C. after being formed upon said surface of said component part.
claim 1
8. The apparatus as in , wherein said component part is a ceramic heater.
claim 1
9. The apparatus as in , wherein said component part comprises aluminum nitride or aluminum.
claim 1
10. A semiconductor device processing chamber, comprising:
a support pedestal; and
a magnesium fluoride coating covering said support pedestal; wherein said magnesium fluoride coating has a density of at least about 85% and a purity of at least about 99%.
11. The semiconductor device processing chamber of , wherein said support pedestal is a ceramic heater.
claim 10
12. The semiconductor device processing chamber of , wherein said support pedestal comprises aluminum nitride or aluminum.
claim 10
13. A method of forming a coated part, comprising the step of:
coating a component part with magnesium fluoride; wherein said magnesium fluoride coating has a density of at least about 85% and a purity of at least about 99%, and said coating reduces corrosion of said component part upon exposure to a corrosive environment.
14. The method of , wherein said magnesium fluoride coating has a density of between about 85-90%.
claim 13
15. The method of , wherein said magnesium fluoride coating has a density of about 100%.
claim 13
16. The method of , wherein said corrosive environment comprises fluorine.
claim 13
17. The method of , wherein said coating step is performed at a pressure of not more than about 1×10−5 torr.
claim 13
18. The method of , wherein said coating step is performed at a temperature of at least about 250° C.
claim 13
19. The method of , wherein said component part comprises aluminum nitride or aluminum.
claim 13
20. The method of , wherein said component part has a surface finish of less than about 10 RA.
claim 13
21. The method of , further comprising the step of annealing said coating at a temperature of at least about 600° C.
claim 14
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/428,140 US6379492B2 (en) | 1998-10-31 | 1999-10-26 | Corrosion resistant coating |
TW088118992A TW500825B (en) | 1998-10-31 | 1999-11-01 | A method of forming a coated part with an improved corrosion resistant coating |
US10/081,312 US20020081395A1 (en) | 1998-10-31 | 2002-02-21 | Corrosion resistant coating |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10653098P | 1998-10-31 | 1998-10-31 | |
US09/428,140 US6379492B2 (en) | 1998-10-31 | 1999-10-26 | Corrosion resistant coating |
Related Child Applications (1)
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US10/081,312 Division US20020081395A1 (en) | 1998-10-31 | 2002-02-21 | Corrosion resistant coating |
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US20010051216A1 true US20010051216A1 (en) | 2001-12-13 |
US6379492B2 US6379492B2 (en) | 2002-04-30 |
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US09/428,140 Expired - Fee Related US6379492B2 (en) | 1998-10-31 | 1999-10-26 | Corrosion resistant coating |
US10/081,312 Abandoned US20020081395A1 (en) | 1998-10-31 | 2002-02-21 | Corrosion resistant coating |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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US10/081,312 Abandoned US20020081395A1 (en) | 1998-10-31 | 2002-02-21 | Corrosion resistant coating |
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US (2) | US6379492B2 (en) |
TW (1) | TW500825B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US20060130967A1 (en) * | 2004-12-17 | 2006-06-22 | Disco Corporation | Wafer machining apparatus |
KR101465640B1 (en) * | 2014-08-08 | 2014-11-28 | 주식회사 펨빅스 | CVD Process Chamber Components with Anti-AlF3 Coating Layer |
CN113594014A (en) * | 2020-04-30 | 2021-11-02 | 中微半导体设备(上海)股份有限公司 | Component, plasma reaction device and component processing method |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US6887316B2 (en) * | 2000-04-14 | 2005-05-03 | Ibiden Co., Ltd. | Ceramic heater |
US20040016745A1 (en) * | 2002-07-29 | 2004-01-29 | Applied Materials, Inc. | Method for achieving process uniformity by modifying thermal coupling between heater and substrate |
US6869818B2 (en) * | 2002-11-18 | 2005-03-22 | Redwood Microsystems, Inc. | Method for producing and testing a corrosion-resistant channel in a silicon device |
JP4653406B2 (en) * | 2004-03-10 | 2011-03-16 | 株式会社アルバック | Water-disintegrating Al composite material, water-disintegrating Al sprayed film, method for producing water-disintegrating Al powder, film forming chamber component, and method for recovering film forming material |
KR102177738B1 (en) | 2013-03-08 | 2020-11-11 | 어플라이드 머티어리얼스, 인코포레이티드 | Chamber component with protective coating suitable for protection against fluorine plasma |
KR20170006807A (en) | 2015-07-09 | 2017-01-18 | (주)티티에스 | Component parts of process chamber and yttria deposition method on componet parts using chemical vapor deposition |
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JPS5821213A (en) * | 1981-07-31 | 1983-02-08 | Canon Inc | Optical coupler |
US5304248A (en) * | 1990-12-05 | 1994-04-19 | Applied Materials, Inc. | Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions |
US5805973A (en) | 1991-03-25 | 1998-09-08 | General Electric Company | Coated articles and method for the prevention of fuel thermal degradation deposits |
US5364496A (en) | 1993-08-20 | 1994-11-15 | Hughes Aircraft Company | Highly durable noncontaminating surround materials for plasma etching |
US5680013A (en) * | 1994-03-15 | 1997-10-21 | Applied Materials, Inc. | Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces |
JPH07280462A (en) * | 1994-04-11 | 1995-10-27 | Shin Etsu Chem Co Ltd | Soaking ceramic heater |
US5756222A (en) | 1994-08-15 | 1998-05-26 | Applied Materials, Inc. | Corrosion-resistant aluminum article for semiconductor processing equipment |
US5597495A (en) * | 1994-11-07 | 1997-01-28 | Keil; Mark | Method and apparatus for etching surfaces with atomic fluorine |
JP3808917B2 (en) * | 1995-07-20 | 2006-08-16 | オリンパス株式会社 | Thin film manufacturing method and thin film |
DE69717182T2 (en) * | 1996-03-07 | 2003-07-24 | Tadahiro Ohmi | An excimer laser |
US6287683B1 (en) * | 1997-04-09 | 2001-09-11 | Canon Kabushiki Kaisha | Anti-fogging coating and optical part using the same |
JP3362113B2 (en) * | 1997-07-15 | 2003-01-07 | 日本碍子株式会社 | Corrosion-resistant member, wafer mounting member, and method of manufacturing corrosion-resistant member |
US6162495A (en) * | 1997-09-29 | 2000-12-19 | Cymer, Inc. | Protective overcoat for replicated diffraction gratings |
US6235120B1 (en) * | 1998-06-26 | 2001-05-22 | Applied Materials, Inc. | Coating for parts used in semiconductor processing chambers |
JP2000034193A (en) * | 1998-07-16 | 2000-02-02 | Nikon Corp | Heat treatment and production of fluoride single crystal |
-
1999
- 1999-10-26 US US09/428,140 patent/US6379492B2/en not_active Expired - Fee Related
- 1999-11-01 TW TW088118992A patent/TW500825B/en not_active IP Right Cessation
-
2002
- 2002-02-21 US US10/081,312 patent/US20020081395A1/en not_active Abandoned
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060130967A1 (en) * | 2004-12-17 | 2006-06-22 | Disco Corporation | Wafer machining apparatus |
KR101465640B1 (en) * | 2014-08-08 | 2014-11-28 | 주식회사 펨빅스 | CVD Process Chamber Components with Anti-AlF3 Coating Layer |
WO2016021799A1 (en) * | 2014-08-08 | 2016-02-11 | (주)펨빅스 | Cvd process chamber component having aluminum fluoride generation barrier film formed thereon |
CN113594014A (en) * | 2020-04-30 | 2021-11-02 | 中微半导体设备(上海)股份有限公司 | Component, plasma reaction device and component processing method |
Also Published As
Publication number | Publication date |
---|---|
US20020081395A1 (en) | 2002-06-27 |
TW500825B (en) | 2002-09-01 |
US6379492B2 (en) | 2002-04-30 |
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