US20010012068A1 - Strobe compatible digital image sensor with low device count per pixel analog-to-digital conversion - Google Patents
Strobe compatible digital image sensor with low device count per pixel analog-to-digital conversion Download PDFInfo
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- US20010012068A1 US20010012068A1 US08/979,161 US97916197A US2001012068A1 US 20010012068 A1 US20010012068 A1 US 20010012068A1 US 97916197 A US97916197 A US 97916197A US 2001012068 A1 US2001012068 A1 US 2001012068A1
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/51—Control of the gain
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- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
Definitions
- the present invention relates to the field of use of digital image capturing. More particularly, the present invention relates to image sensors with built-in analog-to-digital converters.
- imaging sensor arrays typically have separate analog-to-digital (A/D) circuits which are located off of the array to digitize the captured pixels.
- the array is composed of a grid of pixel sensors, each pixel sensor generating a charge when the pixel sensor is exposed to a light source to which it is directed.
- the array first captures the image by having each pixel sensor generating and storing an amount of charge corresponding to the amount of light it is exposed to. Then, the array sends the charge stored in each pixel sensor to the A/D circuit over an analog transfer circuit. The A/D circuit then produces a digital representation of the amount of charge received from the pixel sensor.
- the length of the analog lines which are used to send the analog pixel data between the array and the A/D circuit are quite long. As the length of the analog lines is increased, noise and power effects must be taken into consideration to avoid the loss or degradation of the captured signals.
- the number of analog lines used to transfer pixel signals from the array to the A/D circuit may be limited to avoid cross-talk or any of the other problems which are caused by interference between these signal lines. Additionally, if multiple independent A/D circuits are used, mismatches between them can cause undesirable artifacts in the resulting image. Therefore, the pixels in an array are typically digitized by transferring each pixel's charge sequentially to a single A/D circuit. In color sensors, where the array may be considered to consist of several sub-arrays each corresponding to a particular color channel, each color channel may have a single A/D circuit.
- Photographic strobes use a brief arc of electric current to provide a very intense burst of light that lasts for a very brief period of time. The intensity of the burst is not uniform over its duration. Photographic strobes are compact, light-weight and efficient, and allow accurate capture of the color of the object being illuminated.
- One method of accomplishing accurate transfers and parallel pixel on-sensor processing would be to perform the analog to digital conversion within the circuitry of each pixel.
- A/D conversion within the circuit of each pixel would require each pixel to have its own A/D circuit and building a conventional A/D circuit within each pixel is expensive.
- One alternative approach is to implement a very simple A/D circuit that output only one or more bits.
- a circuit can approximate a higher precision conversion under certain conditions.
- these conditions are not met when exposure times are effectively very short, for example, only a few multiples of the A/D conversion period, such as when a photographic strobe is used.
- a system that works with photographic strobes involves having an apparatus having a photo sensor; a comparator coupled to the photo sensor; a switching element coupled to the photo sensor; an AND-gate coupled to the comparator; and, a memory coupled to the AND-gate.
- a method is used which has the steps of accumulating charge in a photo sensor to arrive at a photo sensor voltage; incrementing a value in a counter; generating a reference voltage based on the value in the counter; determining whether the photo sensor voltage is greater than the reference voltage; and, if the photo sensor voltage is greater than the reference voltage, then loading a memory with the value in the counter.
- FIG. 1 is a block diagram of an image capture circuit configured in accordance with one preferred embodiment of the present invention.
- FIG. 2 illustrates a pixel capture circuit, which is contained in the image capture circuit, configured in accordance with one preferred embodiment of the present invention.
- FIG. 3 is a flow diagram describing the operation of the image capture circuit with the pixel capture circuit.
- FIG. 1 is a diagram of an image capture circuit 30 containing an image sensor 32 having a plurality of pixel capture circuits 50 which are configured in accordance with a preferred embodiment of the present invention. Coupled to pixel capture circuit 50 is a counter 62 , a digital-to-analog circuit 64 , and a delay circuit 66 .
- Pixel capture circuit 50 is representative of all the other pixel capture circuits (not shown) in image sensor 32 . What is described for pixel capture circuit 50 applies to all the pixel capture circuits contained in image sensor 30 . For example, the control signals described below as being provided to pixel capture circuit 50 is provided to all the other pixel capture circuits in image sensor 32 .
- Image capture circuit 30 is contained in a digital imaging device, such as a camera or an image scanner.
- image capture circuit 30 receives as inputs, a RESET signal and a CLOCK (CLK) signal which control the analog to digital conversion.
- CLOCK CLOCK
- the converted values stored in the sensor array may be read out in the same manner used for conventional DRAM arrays. For example, an address is provided which is decoded to drive a particular WordLine, which selects a particular pixel or a set of pixels. The selected pixel or set of pixels then outputs the value stored within the pixel or pixels to bit lines that are arranged throughout the sensor array.
- FIG. 1 Not shown in FIG. 1 are the circuits needed to drive individual word lines in response to an address, as would be necessary for read, write or refresh operations on the digital data stored in the DRAM cells. This would consist of an address decoder with an output enable, the output of which would be logically-OR'd with the WordLine signal that is the output of delay 66 . Also not shown are the sense-amps, bit line drivers and other control circuits used for reading, writing and refreshing the DRAM cells. The method of incorporating these elements into the preferred embodiment is obvious to one skilled in the art.
- FIG. 2 is a block diagram of pixel capture circuit 50 , which includes a photo sensor 52 , a charge dump transistor 54 , a comparator 56 , an AND gate 58 , and a N-bit dynamic random access memory (DRAM) cell 60 .
- Comparator 56 , AND gate 58 and N-bit DRAM cell 60 form the in-pixel elements of the analog-to-digital (A/D) converter.
- Coupled to the bit lines of N-bit DRAM cell 60 is the output of counter 62 .
- coupled to the input of comparator 56 is the output of D/A circuit 64 .
- AND gate 58 is the output of delay circuit 66 .
- Photo sensor 52 is made up of a photoelectric device and a storage capacitor. Typically, this is a photo diode and its intrinsic capacitance. In one preferred embodiment, this is a CMOS sensor.
- Charge dump transistor 54 is coupled to photo sensor 52 to allow the draining and resetting of the charge contained in photo sensor 52 .
- Charge dump transistor 54 as shown, effectively grounds photo sensor 52 when it receives a signal on a Reset Array signal line which is connected to charge dump transistor 54 .
- charge dump transistor 54 could be connected to a fixed voltage source such as the power supply. In the former case, photons cause charge to accumulate on a storage capacitor of photo sensor 52 . In the latter, photons cause charge to leak from the storage capacitor. Either configuration can be used with this invention without altering any other circuits, though the interpretation of the resulting digital value (for example, whether a “0” represents a dark area or a bright one) may change as a result.
- charge dump transistor 54 is a switching device.
- AND gate 58 is used to control when N-bit DRAM cell 60 is to load a new value from the output of counter 62 .
- AND gate 58 takes as input the output of comparator 56 and a WordLine signal and performs a logical-AND operation. The output of AND gate 58 will be sent to the LOAD input of N-bit DRAM cell 60 .
- comparator 56 and the WordLine are both logical ones, then AND gate 58 will output a logical one, which will cause N-bit DRAM cell 60 to connect its bit cells to the bit lines. Since during digitization the bit lines are being driven with the current value of counter 62 , this will load the value which is output from counter 62 into N-bit DRAM cell 60 .
- the output of AND gate 58 may be used to control the reading and writing of DRAM cell 60 .
- the output of comparator 56 must be a logical 1. This can be accomplished in the circuit shown by presenting a sufficiently low voltage (one lower than the lowest possible output of the photo-sensor) on Vref.
- an two input OR gate could inserted between comparator 56 and AND gate 58 , with the remaining input of the OR gate attached to a signal that was routed to all instances of pixel capture circuit 50 .
- a logical 0 on the new control signal would allow the digitization process to occur, while a logical 1 on the new control signal would allow conventional reading and writing of N bit DRAM cell 60 .
- N-bit DRAM cell 60 is used to store the digital representation of the captured photo sensor signal. Specifically, the value stored in N-bit DRAM cell 60 is the digital representation of the magnitude of the light sensed by photo sensor 52 . FIG. 3 discusses how this value is determined.
- counter 62 counts down from a value which is higher or lower than the value that can be represented in N-bit DRAM cell 60 , as the value that can be represented in counter 62 does not have to be matched to the value that can be represented in N-bit DRAM cell 60 . If counter 62 is implemented as a count-down counter, and D/A converter 64 outputs a higher voltage for a higher value of counter 62 , the inputs to comparator 56 will have to be switched for the invention to function correctly. Alternatively, if counter 62 is a count-down counter but D/A converter 64 outputs a higher voltage for lower values of counter 62 , the inputs to comparator 56 do not have to be switched.
- Digital-to-analog (D/A) converter 64 is coupled to counter 62 to convert the output of counter 62 to a reference voltage (Vref) signal to which the signal provided by photo sensor 52 is compared.
- Vref reference voltage
- the characteristics of D/A converter 64 is matched to the characteristics of photo sensor 52 such that each D/A converter 64 and photo sensor 52 will have the same operation parameters to generate consistent signals from the same intensity of light.
- the range of possible voltages that are produced by D/A converter 64 should be just slightly greater than the voltages that might be found on the output of photo sensor 52 .
- the output of D/A converter 64 should be positively monotonic with respect to the input; that is, any increase in the value input to A/D converter 64 should produce an increase in the output voltage of D/A converter 64 .
- D/A converter 64 might be negatively monotonic; that is, any increase in the value input to A/D converter 64 should produce a decrease in the output voltage of D/A converter 64 .
- Delay circuit 66 is used to add a delay in the loading by N-bit DRAM cell 60 of the output of counter 62 to allow for the output of counter 62 to arrive at a stable state, and for the noise that may be generated by driving the new value into the array to settle out.
- delay circuit 66 is a clocked delay circuit using a shift register.
- delay circuit 66 is constructed of one or more buffers, each of which adds its intrinsic propagation delay to the signal.
- V ref D/A(Counter);
- N-bit_DRAM: Counter
- FIG. 3 is a flow diagram of the operation of pixel capture circuit 50 of FIG. 2 in capturing and digitizing a pixel signal.
- the description of the operation of the circuit is limited to capturing a single pixel signal, the description is applicable to capturing multiple pixel signals using either the circuit in FIG. 2 or multiple copies of the circuit in FIG. 2.
- pixel capture circuit 50 is reset by draining the charge accumulated in photo sensor 52 to ground through the use of charge dump transistor 54 .
- Charge dump transistor 54 will act as a closed switch when it receives a signal from the RESET signal line.
- the count contained in counter 62 is also reduced to zero.
- D/A converter 64 outputs a value that is equal to or slightly less than the voltage on the capacitor storing the charge in photo sensor 52 , and this can be used to cause all the DRAM cells in all instances of image capture circuit 30 to be written to zero when the WordLine is driven.
- the value in the DRAM cells could be set to zero by writing zeros to them in the manner usually used for DRAMs.
- the exposure may be terminated by the removal of the light source, or the closing of a mechanical or photoelectric shutter. It is also possible to incorporate an electronic shutter into the photo sensor themselves. In one embodiment, the shutter would take the form of a switching element that stops the flow of charge between the photoelectric device and the capacitor that stores the illumination-determined charge.
- counter 62 When exposure is complete, counter 62 begins to count, and drives the present count onto the bit lines connected to N-bit DRAM cell 60 . At the same time, the output of counter 62 is fed to D/A circuit 64 to produce the V ref signal which is sent to comparator 56 .
- comparator 56 in every pixel will compare the signals received from D/A circuit 64 and photo sensor 52 . If the output of photo sensor 52 is greater than the V ref value as output from D/A circuit 64 , then operation will then continue with block 110 . Otherwise, operation will then continue with block 112 .
- the WordLine will be asserted at some offset time from transitions in the output of counter 62 , to guarantee that the count value output of counter 62 has settled on the bit lines and that the new V ref value, which is the output of D/A circuit 64 , has also settled.
- delay circuit 66 is used to delay the assertion of the WordLine.
- the last value loaded into any N-bit DRAM cell 60 during the digitization sequence will be essentially the value that represents the voltage being output by the corresponding photo sensor 52 , and this is the value that will be available for reading out of N-bit DRAM cell 60 once digitization is complete.
- N-bit DRAM cell 60 is loaded with a binary value which is approximately representative of the charge which is stored in photo sensor 52 . It is to be noted for all pixels of sensor array 32 , each pixel stops loading values into its DRAM cell when appropriate for each pixel's stored charge.
- counter 62 does not stop counting until counter 62 reaches either the maximum value that can be represented by counter 62 , indicating that the digitization of all the image pixels is complete.
- bit lines of N-bit DRAM cell 60 are set into a neutral state and left un-driven. A word line is then driven to select a set of pixels. These pixels then connect their data storage cells to the bit lines, which causes a change in the state of the bit lines that is detected by sense amps. Note that this is a destructive read operation. However, the device may amplify the data read out from the pixels and drive it back into the storage cells if desired, as is typically done in DRAMs. Also note that the dynamic nature of the DRAM cells requires that they either be read out before the stored charge within them leaks enough to make reading them unreliable, or that the DRAM cells be periodically refreshed to maintain the data stored in each DRAM cell.
- the DRAM cells could be replaced with SRAM cells.
- SRAM cells do not need to be periodically refreshed and can be read non-destructively.
- SRAM cells require more transistors and are typically larger than DRAM cells.
- This invention may allow a high-yield mega-pixel digital image sensor to be produced on a modification of a DRAM process without the need for complex or process-sensitive analog circuitry.
- a mega-pixel sensor of this design with 10 bit A/D conversion and two bits for error correction, would have approximately 26 million transistor, and might be equivalent in size to a 32 mega-bit DRAM.
- a sensor with a resolution that conforms to the standard set by national television standards committee (NTSC) would have approximately 8 million transistors. Note that the image can be stored and processed within the sensor, since it can behave as DRAM if desired. As digitization is performed after image acquisition, this design will work with photographic strobes and other time-varying sources of illumination.
- the invention will facilitate the implementation of “on-sensor” processing of an image. This will allow more functionality to be built into the sensor and require less support circuitry for using a sensor array, configured in accordance with the present invention, in digital imaging applications. For example, image compression circuits can be provided on the image sensor, which would reduce the amount of data that would have to be manipulated after the data is output from the sensor.
- pixel capture circuit 50 of the present invention allows simple scaling of the resolution of the sensor array as each pixel capture circuit is identical to the next and can be replicated by standard computer-aided manufacturing techniques. If necessary, several image capture circuits such as image capture circuit 30 can be combined on a single circuit to allow for applications where timing and noise considerations do not allow more pixel capture circuits such as pixel capture circuit 50 to be added to image capture circuit 30 .
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Abstract
What is disclosed is a method having the steps of accumulating charge in a photo sensor to arrive at a photo sensor voltage; incrementing a value in a counter; generating a reference voltage based on the value in the counter; determining whether the photo sensor voltage is greater than the reference voltage; and, if the photo sensor voltage is greater than the reference voltage, then loading a memory with the value in the counter. What is also disclosed is an apparatus having a photo sensor; a comparator coupled to the photo sensor; a switching element coupled to the photo sensor; an AND-gate coupled to the comparator; and, a memory coupled to the AND-gate.
Description
- 1. Field of the Invention
- The present invention relates to the field of use of digital image capturing. More particularly, the present invention relates to image sensors with built-in analog-to-digital converters.
- 2. Description of Related Art
- Typically, imaging sensor arrays have separate analog-to-digital (A/D) circuits which are located off of the array to digitize the captured pixels. The array is composed of a grid of pixel sensors, each pixel sensor generating a charge when the pixel sensor is exposed to a light source to which it is directed.
- During operation, the array first captures the image by having each pixel sensor generating and storing an amount of charge corresponding to the amount of light it is exposed to. Then, the array sends the charge stored in each pixel sensor to the A/D circuit over an analog transfer circuit. The A/D circuit then produces a digital representation of the amount of charge received from the pixel sensor.
- As the A/D circuit is often located some distance away from the array, the length of the analog lines which are used to send the analog pixel data between the array and the A/D circuit are quite long. As the length of the analog lines is increased, noise and power effects must be taken into consideration to avoid the loss or degradation of the captured signals.
- Due to noise considerations, the number of analog lines used to transfer pixel signals from the array to the A/D circuit may be limited to avoid cross-talk or any of the other problems which are caused by interference between these signal lines. Additionally, if multiple independent A/D circuits are used, mismatches between them can cause undesirable artifacts in the resulting image. Therefore, the pixels in an array are typically digitized by transferring each pixel's charge sequentially to a single A/D circuit. In color sensors, where the array may be considered to consist of several sub-arrays each corresponding to a particular color channel, each color channel may have a single A/D circuit.
- It would be desirable to eliminate the difficulties involved in accurately transferring the accumulated charge in each pixel to the A/D circuit. It would also sometimes be desirable to perform some amount of highly-parallel digital processing on the captured image before outputting it from the sensor—also known as digital focal-plane processing. It would be desirable to do both of these things correctly when the scene is illuminated by a photographic strobe, as is usually the case for indoor still photography.
- Photographic strobes use a brief arc of electric current to provide a very intense burst of light that lasts for a very brief period of time. The intensity of the burst is not uniform over its duration. Photographic strobes are compact, light-weight and efficient, and allow accurate capture of the color of the object being illuminated.
- One method of accomplishing accurate transfers and parallel pixel on-sensor processing would be to perform the analog to digital conversion within the circuitry of each pixel. However, to accomplish A/D conversion within the circuit of each pixel would require each pixel to have its own A/D circuit and building a conventional A/D circuit within each pixel is expensive.
- One alternative approach is to implement a very simple A/D circuit that output only one or more bits. By using a technique known as over-sampling, a circuit can approximate a higher precision conversion under certain conditions. However, these conditions are not met when exposure times are effectively very short, for example, only a few multiples of the A/D conversion period, such as when a photographic strobe is used.
- The techniques described above measures the charge level on the pixels after they have been exposed for a given period of time, and typically this measurement is done after the exposure has ended. Another approach is to measure, during the exposure, how long each pixel takes to reach a particular level of charge. In this approach, an analog circuit in each pixel constantly compares the charge level to a reference, and when the charge level reaches the reference point, a signal is generated which latches the current exposure time into a register associated with the pixel. This works well if the level of illumination if constant over the image capture interval, and if the image capture interval is many hundreds of clock cycles. However, when photographic strobes are used, these criteria for proper operation are not met.
- A system that works with photographic strobes involves having an apparatus having a photo sensor; a comparator coupled to the photo sensor; a switching element coupled to the photo sensor; an AND-gate coupled to the comparator; and, a memory coupled to the AND-gate. In this system, a method is used which has the steps of accumulating charge in a photo sensor to arrive at a photo sensor voltage; incrementing a value in a counter; generating a reference voltage based on the value in the counter; determining whether the photo sensor voltage is greater than the reference voltage; and, if the photo sensor voltage is greater than the reference voltage, then loading a memory with the value in the counter.
- FIG. 1 is a block diagram of an image capture circuit configured in accordance with one preferred embodiment of the present invention.
- FIG. 2 illustrates a pixel capture circuit, which is contained in the image capture circuit, configured in accordance with one preferred embodiment of the present invention.
- FIG. 3 is a flow diagram describing the operation of the image capture circuit with the pixel capture circuit.
- To digitize all pixels of a sensor array simultaneously in a manner that provides compatibility with photographic strobes, a system is provided which will allow each photo sensor in the sensor array to generate a digital value from the analog charge stored in the photo sensor. Each pixel of an image captured by the sensor array will be processed by a dedicated pixel capture circuit. The system will be scalable to provide as many pixels to be captured simultaneous in the sensor array as desired in an implementation, thereby allowing the creation of image capturing devices with a high-degree of resolution.
- FIG. 1 is a diagram of an
image capture circuit 30 containing animage sensor 32 having a plurality ofpixel capture circuits 50 which are configured in accordance with a preferred embodiment of the present invention. Coupled topixel capture circuit 50 is acounter 62, a digital-to-analog circuit 64, and adelay circuit 66. -
Pixel capture circuit 50 is representative of all the other pixel capture circuits (not shown) inimage sensor 32. What is described forpixel capture circuit 50 applies to all the pixel capture circuits contained inimage sensor 30. For example, the control signals described below as being provided topixel capture circuit 50 is provided to all the other pixel capture circuits inimage sensor 32. -
Image capture circuit 30 is contained in a digital imaging device, such as a camera or an image scanner. In a preferred embodiment,image capture circuit 30 receives as inputs, a RESET signal and a CLOCK (CLK) signal which control the analog to digital conversion. - For output, the converted values stored in the sensor array may be read out in the same manner used for conventional DRAM arrays. For example, an address is provided which is decoded to drive a particular WordLine, which selects a particular pixel or a set of pixels. The selected pixel or set of pixels then outputs the value stored within the pixel or pixels to bit lines that are arranged throughout the sensor array.
- Not shown in FIG. 1 are the circuits needed to drive individual word lines in response to an address, as would be necessary for read, write or refresh operations on the digital data stored in the DRAM cells. This would consist of an address decoder with an output enable, the output of which would be logically-OR'd with the WordLine signal that is the output of
delay 66. Also not shown are the sense-amps, bit line drivers and other control circuits used for reading, writing and refreshing the DRAM cells. The method of incorporating these elements into the preferred embodiment is obvious to one skilled in the art. - FIG. 2 is a block diagram of
pixel capture circuit 50, which includes aphoto sensor 52, acharge dump transistor 54, acomparator 56, anAND gate 58, and a N-bit dynamic random access memory (DRAM)cell 60.Comparator 56, ANDgate 58 and N-bit DRAM cell 60 form the in-pixel elements of the analog-to-digital (A/D) converter. Coupled to the bit lines of N-bit DRAM cell 60 is the output ofcounter 62. Also, coupled to the input ofcomparator 56 is the output of D/A circuit 64. Lastly, coupled to the input ofAND gate 58 is the output ofdelay circuit 66. -
Photo sensor 52 is made up of a photoelectric device and a storage capacitor. Typically, this is a photo diode and its intrinsic capacitance. In one preferred embodiment, this is a CMOS sensor. -
Charge dump transistor 54 is coupled tophoto sensor 52 to allow the draining and resetting of the charge contained inphoto sensor 52.Charge dump transistor 54, as shown, effectivelygrounds photo sensor 52 when it receives a signal on a Reset Array signal line which is connected to chargedump transistor 54. Alternatively,charge dump transistor 54 could be connected to a fixed voltage source such as the power supply. In the former case, photons cause charge to accumulate on a storage capacitor ofphoto sensor 52. In the latter, photons cause charge to leak from the storage capacitor. Either configuration can be used with this invention without altering any other circuits, though the interpretation of the resulting digital value (for example, whether a “0” represents a dark area or a bright one) may change as a result. In one preferred embodiment,charge dump transistor 54 is a switching device. -
Comparitor 56 receives the output ofphoto sensor 52 and is used in the determination of the digital representation of the charge stored inphoto sensor 52. In one preferred embodiment,comparitor 56 is a voltage comparitor which will compare the voltage at the output ofphoto sensor 52 and the reference voltage Vref which is generated by D/A circuit 64, as described below. - During digitization, AND
gate 58 is used to control when N-bit DRAM cell 60 is to load a new value from the output ofcounter 62. ANDgate 58 takes as input the output ofcomparator 56 and a WordLine signal and performs a logical-AND operation. The output of ANDgate 58 will be sent to the LOAD input of N-bit DRAM cell 60. Whencomparator 56 and the WordLine are both logical ones, then ANDgate 58 will output a logical one, which will cause N-bit DRAM cell 60 to connect its bit cells to the bit lines. Since during digitization the bit lines are being driven with the current value ofcounter 62, this will load the value which is output from counter 62 into N-bit DRAM cell 60. Note that when digitization is not in progress, the output of ANDgate 58 may be used to control the reading and writing ofDRAM cell 60. To accomplish this, the output ofcomparator 56 must be a logical 1. This can be accomplished in the circuit shown by presenting a sufficiently low voltage (one lower than the lowest possible output of the photo-sensor) on Vref. In another embodiment, an two input OR gate could inserted betweencomparator 56 and ANDgate 58, with the remaining input of the OR gate attached to a signal that was routed to all instances ofpixel capture circuit 50. In this alternate embodiment, a logical 0 on the new control signal would allow the digitization process to occur, while a logical 1 on the new control signal would allow conventional reading and writing of N bitDRAM cell 60. - N-
bit DRAM cell 60 is used to store the digital representation of the captured photo sensor signal. Specifically, the value stored in N-bit DRAM cell 60 is the digital representation of the magnitude of the light sensed byphoto sensor 52. FIG. 3 discusses how this value is determined. -
Counter 62 is coupled to the input of N-bit DRAM cell 60 to supply a value to the pixel, as explained below. In a preferred embodiment,counter 62 is a count-up counter which will count up to the maximum value that can be represented in N-bit DRAM cell 60. In an alternate embodiment, counter 62 can be a counter which can count to a value which is either higher or lower than the maximum value that can be represented in N-bit DRAM cell 60. The size ofcounter 62 and N-bit DRAM cell 60 is dictated by design requirements. In addition, counter 62 can be implemented as a count-down counter, counting down from the highest value that can be represented in N-bit DRAM cell 60. Alternatively, counter 62 counts down from a value which is higher or lower than the value that can be represented in N-bit DRAM cell 60, as the value that can be represented incounter 62 does not have to be matched to the value that can be represented in N-bit DRAM cell 60. Ifcounter 62 is implemented as a count-down counter, and D/A converter 64 outputs a higher voltage for a higher value ofcounter 62, the inputs tocomparator 56 will have to be switched for the invention to function correctly. Alternatively, ifcounter 62 is a count-down counter but D/A converter 64 outputs a higher voltage for lower values ofcounter 62, the inputs tocomparator 56 do not have to be switched. - Digital-to-analog (D/A) converter64 is coupled to counter 62 to convert the output of
counter 62 to a reference voltage (Vref) signal to which the signal provided byphoto sensor 52 is compared. In a preferred embodiment, the characteristics of D/A converter 64 is matched to the characteristics ofphoto sensor 52 such that each D/A converter 64 andphoto sensor 52 will have the same operation parameters to generate consistent signals from the same intensity of light. For example, the range of possible voltages that are produced by D/A converter 64 should be just slightly greater than the voltages that might be found on the output ofphoto sensor 52. In this preferred embodiment, the output of D/A converter 64 should be positively monotonic with respect to the input; that is, any increase in the value input to A/D converter 64 should produce an increase in the output voltage of D/A converter 64. In an alternate embodiment, D/A converter 64 might be negatively monotonic; that is, any increase in the value input to A/D converter 64 should produce a decrease in the output voltage of D/A converter 64. -
Delay circuit 66 is used to add a delay in the loading by N-bit DRAM cell 60 of the output ofcounter 62 to allow for the output ofcounter 62 to arrive at a stable state, and for the noise that may be generated by driving the new value into the array to settle out. In one preferred embodiment,delay circuit 66 is a clocked delay circuit using a shift register. In another embodiment,delay circuit 66 is constructed of one or more buffers, each of which adds its intrinsic propagation delay to the signal. - The following pseudo-code illustrates the general operation of
image capture circuit 30 andpixel capture circuit 50, where MAX is the largest digital output value for each pixel circuit (for example, if the DRAM cells are 8 bits in size, MAX=255): - BEGIN PROGRAM
- Counter=0;
- LOOPTOP:
- Vref=D/A(Counter);
- for all pixels
- if Vphotosensor greater_than Vref then
- N-bit_DRAM:=Counter;
- else
- do nothing;
- end if;
- end for;
- Counter:=Counter+1;
- if Counter less_than_or_equal_to MAX then
- go to LOOPTOP;
- end if;
- END PROGRAM
- FIG. 3 is a flow diagram of the operation of
pixel capture circuit 50 of FIG. 2 in capturing and digitizing a pixel signal. Although the description of the operation of the circuit is limited to capturing a single pixel signal, the description is applicable to capturing multiple pixel signals using either the circuit in FIG. 2 or multiple copies of the circuit in FIG. 2. - In
block 100,pixel capture circuit 50 is reset by draining the charge accumulated inphoto sensor 52 to ground through the use ofcharge dump transistor 54.Charge dump transistor 54 will act as a closed switch when it receives a signal from the RESET signal line. During reset, the count contained incounter 62 is also reduced to zero. D/A converter 64 outputs a value that is equal to or slightly less than the voltage on the capacitor storing the charge inphoto sensor 52, and this can be used to cause all the DRAM cells in all instances ofimage capture circuit 30 to be written to zero when the WordLine is driven. Alternatively, the value in the DRAM cells could be set to zero by writing zeros to them in the manner usually used for DRAMs. - In
block 102,photo sensor 52 acquires a charge as it is exposed to the image to be captured. At this point,counter 62 is not being clocked. Conversion of the analog values to digital form does not occur until after the exposure is complete. - The exposure may be terminated by the removal of the light source, or the closing of a mechanical or photoelectric shutter. It is also possible to incorporate an electronic shutter into the photo sensor themselves. In one embodiment, the shutter would take the form of a switching element that stops the flow of charge between the photoelectric device and the capacitor that stores the illumination-determined charge.
- When exposure is complete,
counter 62 begins to count, and drives the present count onto the bit lines connected to N-bit DRAM cell 60. At the same time, the output ofcounter 62 is fed to D/A circuit 64 to produce the Vref signal which is sent tocomparator 56. - As
counter 62 is counting up, each pixel capture circuit such aspixel capture circuit 50 writes incrementing values starting at 0 into the pixel capture circuit respective N-bit DRAM cell, until a number X is reached such that Vref for X is higher than the stored charge. For this X and all subsequent n greater than it, no write to N-bit DRAM cell occurs, so the value in the DRAM cell remains at X-1, the largest value for which Vref was less than or equal to the stored charge's voltage. - In
block 108,comparator 56 in every pixel will compare the signals received from D/A circuit 64 andphoto sensor 52. If the output ofphoto sensor 52 is greater than the Vref value as output from D/A circuit 64, then operation will then continue withblock 110. Otherwise, operation will then continue withblock 112. - In
block 110, if the output ofphoto sensor 52 is greater than the Vref value from D/A circuit 64,comparator 56 will output a logical one value, which will be fed to ANDgate 58. The output of ANDgate 58 controls the connection of the charge storage cells within N-bit DRAM cell 60 to the bit lines. Since the bit lines are being driven with the value currently being output bycounter 62, N-bit DRAM cell 60 will load the value output by counter 62 when ANDgate 58 outputs a logical one. Thus, as long as ANDgate 58 is receiving a logical one fromcomparator 56, N-bit DRAM cell 60 will be loaded with the present count ofcounter 62 every time the WordLine is asserted. - In a preferred embodiment, the WordLine will be asserted at some offset time from transitions in the output of
counter 62, to guarantee that the count value output ofcounter 62 has settled on the bit lines and that the new Vref value, which is the output of D/A circuit 64, has also settled. To provide this offset,delay circuit 66 is used to delay the assertion of the WordLine. - Thus, whenever Vref is less than the voltage output by the
photo sensor 52, and the WordLine is asserted, a digital value representing Vref is loaded into the N-bit DRAM cell 60. Since counter 62 counts up and D/A converter 64 is monotonic, Vref is monotonically increasing. Therefor, the last value loaded into N-bit DRAM cell 60 will be value ofcounter 62 that generated the largest Vref less than or equal to the voltage being output by thephoto sensor 52. Since the largest value less than or equal to a value is essentially the value itself, then the last value loaded into any N-bit DRAM cell 60 during the digitization sequence will be essentially the value that represents the voltage being output by the correspondingphoto sensor 52, and this is the value that will be available for reading out of N-bit DRAM cell 60 once digitization is complete. - In terms of FIG. 3, this means that within each
pixel capture circuit 50, on each iteration, the “YES” branch fromblock 108 will be taken until the reference voltage exceeds the output of thephoto sensor 52, and from that point in time onward the “NO” branch will be taken, until theloop encompassing block - This accomplishes the A/D conversion as N-
bit DRAM cell 60 is loaded with a binary value which is approximately representative of the charge which is stored inphoto sensor 52. It is to be noted for all pixels ofsensor array 32, each pixel stops loading values into its DRAM cell when appropriate for each pixel's stored charge. - As shown in block122,
counter 62 does not stop counting untilcounter 62 reaches either the maximum value that can be represented bycounter 62, indicating that the digitization of all the image pixels is complete. - To read the value out after conversion, standard DRAM array read techniques are used. Typically, the bit lines of N-
bit DRAM cell 60 are set into a neutral state and left un-driven. A word line is then driven to select a set of pixels. These pixels then connect their data storage cells to the bit lines, which causes a change in the state of the bit lines that is detected by sense amps. Note that this is a destructive read operation. However, the device may amplify the data read out from the pixels and drive it back into the storage cells if desired, as is typically done in DRAMs. Also note that the dynamic nature of the DRAM cells requires that they either be read out before the stored charge within them leaks enough to make reading them unreliable, or that the DRAM cells be periodically refreshed to maintain the data stored in each DRAM cell. - In an alternate embodiment, the DRAM cells could be replaced with SRAM cells. SRAM cells do not need to be periodically refreshed and can be read non-destructively. However, SRAM cells require more transistors and are typically larger than DRAM cells.
- This invention may allow a high-yield mega-pixel digital image sensor to be produced on a modification of a DRAM process without the need for complex or process-sensitive analog circuitry. A mega-pixel sensor of this design, with 10 bit A/D conversion and two bits for error correction, would have approximately 26 million transistor, and might be equivalent in size to a 32 mega-bit DRAM. A sensor with a resolution that conforms to the standard set by national television standards committee (NTSC) would have approximately 8 million transistors. Note that the image can be stored and processed within the sensor, since it can behave as DRAM if desired. As digitization is performed after image acquisition, this design will work with photographic strobes and other time-varying sources of illumination.
- In addition, the invention will facilitate the implementation of “on-sensor” processing of an image. This will allow more functionality to be built into the sensor and require less support circuitry for using a sensor array, configured in accordance with the present invention, in digital imaging applications. For example, image compression circuits can be provided on the image sensor, which would reduce the amount of data that would have to be manipulated after the data is output from the sensor.
- Moreover,
pixel capture circuit 50 of the present invention allows simple scaling of the resolution of the sensor array as each pixel capture circuit is identical to the next and can be replicated by standard computer-aided manufacturing techniques. If necessary, several image capture circuits such asimage capture circuit 30 can be combined on a single circuit to allow for applications where timing and noise considerations do not allow more pixel capture circuits such aspixel capture circuit 50 to be added toimage capture circuit 30. - While the present invention has been particularly described with reference to the various figures, it should be understood that the figures are for illustration only and should not be taken as limiting the scope of the invention. Many changes and modifications may be made to the invention, by one having ordinary skill in the art, without departing from the spirit and scope of the invention.
Claims (11)
1. A method comprising the steps of:
accumulating charge in a photo sensor to arrive at a photo sensor voltage;
incrementing a value in a counter;
generating a reference voltage based on said value in said counter;
determining whether said photo sensor voltage is greater than said reference voltage; and,
if said photo sensor voltage is greater than said reference voltage, then loading a memory with said value in said counter.
2. The method of , wherein if said photo sensor voltage is lesser than said reference voltage, then preventing said memory from being loaded with said value in said counter.
claim 1
3. The method of , further comprising the steps of:
claim 1
discharging said photo sensor; and,
reseting said counter.
4. The method of , wherein said reference voltage generation comprises the steps of:
claim 1
reading said counter to provide said value; and,
performing a digital to analog conversion of said value to arrive at said reference voltage.
5. An apparatus comprising:
a photo sensor;
a comparator coupled to said photo sensor;
a switching element coupled to said photo sensor;
an AND-gate coupled to said comparator; and,
a memory coupled to said AND-gate.
6. The apparatus of , further comprising a digital-to-analog circuit coupled to said comparator.
claim 5
7. The apparatus of , further comprising a counter coupled to said digital-to-analog circuit.
claim 6
8. The apparatus of , further comprising a delay circuit coupled to said AND-gate.
claim 5
9. The apparatus of , wherein said delay circuit is configured to receive a clock signal.
claim 8
10. The apparatus of , wherein said counter is configured to receive a clock signal and a reset signal.
claim 7
11. An apparatus comprising:
a sensor array having:
a photo sensor;
a comparator coupled to said photo sensor and receiving an output from said photo sensor;
a switching element coupled to said output of said photo sensor;
an AND-gate coupled to said comparator and receiving an output of said comparator; and,
a memory coupled to said AND-gate and receiving an output of said AND-gate;
a digital-to-analog circuit coupled to said comparator of said sensor array, said comparator receiving an output of said digital-to-analog circuit;
a counter coupled to said digital-to-analog circuit, said digital-to-analog circuit receiving an ouput of said counter; and,
a delay circuit coupled to said AND-gate of said sensor array, said AND-gate receiving an output of said delay circuit.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/979,161 US6377303B2 (en) | 1997-11-26 | 1997-11-26 | Strobe compatible digital image sensor with low device count per pixel analog-to-digital conversion |
PCT/US1998/025180 WO1999027708A1 (en) | 1997-11-26 | 1998-11-23 | Strobe compatible digital image sensor with low device count per pixel analog-to-digital conversion |
AU16061/99A AU1606199A (en) | 1997-11-26 | 1998-11-23 | Strobe compatible digital image sensor with low device count per pixel analog-to-digital conversion |
TW087119641A TW374973B (en) | 1997-11-26 | 1998-11-26 | Strobe compatible digital image sensor with low device count per pixel analog-to-digital conversion |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/979,161 US6377303B2 (en) | 1997-11-26 | 1997-11-26 | Strobe compatible digital image sensor with low device count per pixel analog-to-digital conversion |
Publications (2)
Publication Number | Publication Date |
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US20010012068A1 true US20010012068A1 (en) | 2001-08-09 |
US6377303B2 US6377303B2 (en) | 2002-04-23 |
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US08/979,161 Expired - Fee Related US6377303B2 (en) | 1997-11-26 | 1997-11-26 | Strobe compatible digital image sensor with low device count per pixel analog-to-digital conversion |
Country Status (4)
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---|---|
US (1) | US6377303B2 (en) |
AU (1) | AU1606199A (en) |
TW (1) | TW374973B (en) |
WO (1) | WO1999027708A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1657910A1 (en) * | 2004-11-12 | 2006-05-17 | STMicroelectronics Limited | Image sensor |
US20080106622A1 (en) * | 2004-06-02 | 2008-05-08 | The Science And Technology Facilities Council | Imaging Device |
US20100172466A1 (en) * | 2006-08-14 | 2010-07-08 | Koninklijke Philips Electronics N. V. | Radiation detector with counting electronics |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6552745B1 (en) * | 1998-04-08 | 2003-04-22 | Agilent Technologies, Inc. | CMOS active pixel with memory for imaging sensors |
US6448912B1 (en) * | 1998-10-29 | 2002-09-10 | Micron Technology, Inc. | Oversampled centroid A to D converter |
US7139025B1 (en) * | 1998-10-29 | 2006-11-21 | Micron Technology, Inc. | Active pixel sensor with mixed analog and digital signal integration |
EP0999698B1 (en) * | 1998-11-02 | 2013-06-19 | Canon Kabushiki Kaisha | Solid-state image pickup device and method of resetting the same |
US6677996B1 (en) * | 1999-04-21 | 2004-01-13 | Pictos Technologies, Inc. | Real time camera exposure control |
US6646583B1 (en) * | 2000-10-25 | 2003-11-11 | Micron Technology, Inc. | High speed digital to analog converter using multiple staggered successive approximation cells |
US6525304B1 (en) * | 2000-11-28 | 2003-02-25 | Foveon, Inc. | Circuitry for converting analog signals from pixel sensor to a digital and for storing the digital signal |
US6741198B2 (en) | 2001-06-20 | 2004-05-25 | R3 Logic, Inc. | High resolution, low power, wide dynamic range imager with embedded pixel processor and DRAM storage |
US7071982B2 (en) * | 2001-10-24 | 2006-07-04 | Texas Instruments Incorporated | Adaptive relative and absolute address coding CMOS imager technique and system architecture |
US6667769B2 (en) * | 2001-12-10 | 2003-12-23 | Motorola, Inc. | Time integrating pixel sensor |
US6590610B2 (en) * | 2001-12-10 | 2003-07-08 | Motorola, Inc. | Digital double sampling in time integrating pixel sensors |
US6704046B2 (en) * | 2002-04-17 | 2004-03-09 | Motorola, Inc. | Digital pixel image sensor with independent color channel reference signals |
US7362365B1 (en) * | 2002-06-26 | 2008-04-22 | Pixim, Inc. | Digital image capture having an ultra-high dynamic range |
US7139024B2 (en) * | 2002-07-26 | 2006-11-21 | Xerox Corporation | Large-area imager with direct digital pixel output |
US6707410B1 (en) * | 2002-08-23 | 2004-03-16 | Micron Technology, Inc. | Digital pixel sensor with a dynamic comparator having reduced threshold voltage sensitivity |
US6906304B2 (en) * | 2002-11-27 | 2005-06-14 | Microsoft Corporation | Photo-sensor array for motion detection |
US7209172B2 (en) * | 2003-03-13 | 2007-04-24 | Motorola, Inc. | Multicolor light sensing pixel structure |
US20050200296A1 (en) * | 2004-02-24 | 2005-09-15 | Naugler W. E.Jr. | Method and device for flat panel emissive display using shielded or partially shielded sensors to detect user screen inputs |
AU2005216038A1 (en) * | 2004-02-24 | 2005-09-09 | Nuelight Corporation | Penlight and touch screen data input system and method for flat panel displays |
TWI249947B (en) * | 2004-06-04 | 2006-02-21 | Via Tech Inc | Digital pixel sensor and operating method thereof |
JP2008502258A (en) * | 2004-06-09 | 2008-01-24 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Electronic circuit |
US7151475B2 (en) * | 2004-08-31 | 2006-12-19 | Micron Technology, Inc. | Minimized differential SAR-type column-wide ADC for CMOS image sensors |
US7488926B2 (en) * | 2006-01-06 | 2009-02-10 | Microsoft Corporation | Pixel array with shared pixel output lines |
US20090002535A1 (en) * | 2007-06-27 | 2009-01-01 | Arizona Board Of Regents On Behalf Of Arizona State University | Offset-compensated self-reset cmos image sensors |
JP2012257138A (en) * | 2011-06-10 | 2012-12-27 | Renesas Electronics Corp | Ad converter |
US9866780B1 (en) * | 2016-11-17 | 2018-01-09 | Northrop Grumman Systems Corporation | Pixel information recovery by oversampling a comparison of pixel data and a noise signal |
JP7280691B2 (en) * | 2018-11-27 | 2023-05-24 | キヤノン株式会社 | IMAGE SENSOR, CONTROL METHOD THEREOF, AND IMAGING DEVICE |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0799868B2 (en) * | 1984-12-26 | 1995-10-25 | 日本放送協会 | Solid-state imaging device |
US4686391A (en) * | 1986-05-08 | 1987-08-11 | Genrad, Inc. | Fast-acting comparison circuit |
JP2560747B2 (en) * | 1987-09-22 | 1996-12-04 | ミノルタ株式会社 | Photoelectric conversion device |
JP2917519B2 (en) * | 1991-03-25 | 1999-07-12 | 松下電器産業株式会社 | Data slice circuit |
EP0719039A3 (en) * | 1992-08-10 | 1998-03-11 | Sony Corporation | Electronic shutter time control with noise suppression for a video camera |
US5373295A (en) * | 1992-09-02 | 1994-12-13 | General Electric Company | Digital interface circuit for high dynamic range analog sensors |
JPH0767152B2 (en) * | 1993-03-25 | 1995-07-19 | 日本電気株式会社 | Image sensor and its driving method |
US5565915A (en) * | 1993-06-15 | 1996-10-15 | Matsushita Electric Industrial Co., Ltd. | Solid-state image taking apparatus including photodiode and circuit for converting output signal of the photodiode into signal which varies with time at variation rate depending on intensity of light applied to the photodiode |
JP3015246B2 (en) * | 1993-10-08 | 2000-03-06 | シャープ株式会社 | Solid-state imaging device |
US5461425A (en) * | 1994-02-15 | 1995-10-24 | Stanford University | CMOS image sensor with pixel level A/D conversion |
US5665959A (en) * | 1995-01-13 | 1997-09-09 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Adminstration | Solid-state image sensor with focal-plane digital photon-counting pixel array |
JPH09148630A (en) * | 1995-11-21 | 1997-06-06 | Rohm Co Ltd | Light quantity adjusting circuit and light application equipment using the same |
US5748303A (en) * | 1996-12-31 | 1998-05-05 | Intel Corporation | Light sensing device |
US5920274A (en) * | 1997-08-05 | 1999-07-06 | International Business Machines Corporation | Image sensor employing non-uniform A/D conversion |
-
1997
- 1997-11-26 US US08/979,161 patent/US6377303B2/en not_active Expired - Fee Related
-
1998
- 1998-11-23 WO PCT/US1998/025180 patent/WO1999027708A1/en active Application Filing
- 1998-11-23 AU AU16061/99A patent/AU1606199A/en not_active Abandoned
- 1998-11-26 TW TW087119641A patent/TW374973B/en active
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080106622A1 (en) * | 2004-06-02 | 2008-05-08 | The Science And Technology Facilities Council | Imaging Device |
US7719589B2 (en) * | 2004-06-02 | 2010-05-18 | The Science And Technology Facilities Council | Imaging array with enhanced event detection |
EP1657910A1 (en) * | 2004-11-12 | 2006-05-17 | STMicroelectronics Limited | Image sensor |
US20060125941A1 (en) * | 2004-11-12 | 2006-06-15 | Stmicroelectronics Limited | Image sensor |
US7940317B2 (en) * | 2004-11-12 | 2011-05-10 | Stmicroelectronics Ltd. | Image sensor having a pixel array with serial readout |
US20100172466A1 (en) * | 2006-08-14 | 2010-07-08 | Koninklijke Philips Electronics N. V. | Radiation detector with counting electronics |
Also Published As
Publication number | Publication date |
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US6377303B2 (en) | 2002-04-23 |
AU1606199A (en) | 1999-06-15 |
WO1999027708A1 (en) | 1999-06-03 |
TW374973B (en) | 1999-11-21 |
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