US20010004790A1 - Electrical connections to dielectric materials - Google Patents
Electrical connections to dielectric materials Download PDFInfo
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- US20010004790A1 US20010004790A1 US09/778,641 US77864101A US2001004790A1 US 20010004790 A1 US20010004790 A1 US 20010004790A1 US 77864101 A US77864101 A US 77864101A US 2001004790 A1 US2001004790 A1 US 2001004790A1
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- layer
- tantalum
- noble metal
- oxygen
- platinum
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- 239000003989 dielectric material Substances 0.000 title description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 107
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 57
- 239000001301 oxygen Substances 0.000 claims abstract description 57
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 53
- 239000000463 material Substances 0.000 claims abstract description 51
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 50
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 49
- 238000005247 gettering Methods 0.000 claims abstract description 47
- 229910000510 noble metal Inorganic materials 0.000 claims abstract description 38
- 239000000203 mixture Substances 0.000 claims abstract description 34
- 229910052454 barium strontium titanate Inorganic materials 0.000 claims abstract description 8
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims abstract description 7
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 5
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 27
- 239000003990 capacitor Substances 0.000 claims description 22
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 16
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 15
- 229910052719 titanium Inorganic materials 0.000 claims description 15
- 239000010936 titanium Substances 0.000 claims description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 229910021332 silicide Inorganic materials 0.000 claims description 11
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 11
- 229910052721 tungsten Inorganic materials 0.000 claims description 11
- 239000010937 tungsten Substances 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 229910052732 germanium Inorganic materials 0.000 claims description 9
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 239000011733 molybdenum Substances 0.000 claims description 8
- 229910052763 palladium Inorganic materials 0.000 claims description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052580 B4C Inorganic materials 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 claims description 5
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052741 iridium Inorganic materials 0.000 claims description 5
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 5
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 5
- 229910021344 molybdenum silicide Inorganic materials 0.000 claims description 5
- 229910052703 rhodium Inorganic materials 0.000 claims description 5
- 239000010948 rhodium Substances 0.000 claims description 5
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 5
- 230000007704 transition Effects 0.000 claims description 5
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 5
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 5
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 claims description 5
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 4
- 229910003098 YBa2Cu3O7−x Inorganic materials 0.000 claims description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 2
- 229910002113 barium titanate Inorganic materials 0.000 claims description 2
- JQJCSZOEVBFDKO-UHFFFAOYSA-N lead zinc Chemical compound [Zn].[Pb] JQJCSZOEVBFDKO-UHFFFAOYSA-N 0.000 claims description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 2
- 238000004377 microelectronic Methods 0.000 claims 3
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 239000000758 substrate Substances 0.000 abstract description 28
- 229910052751 metal Inorganic materials 0.000 abstract description 27
- 239000002184 metal Substances 0.000 abstract description 27
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000011159 matrix material Substances 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 description 18
- 150000002736 metal compounds Chemical class 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 150000002739 metals Chemical class 0.000 description 7
- 150000001247 metal acetylides Chemical class 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- MUMZUERVLWJKNR-UHFFFAOYSA-N oxoplatinum Chemical compound [Pt]=O MUMZUERVLWJKNR-UHFFFAOYSA-N 0.000 description 1
- VVRQVWSVLMGPRN-UHFFFAOYSA-N oxotungsten Chemical class [W]=O VVRQVWSVLMGPRN-UHFFFAOYSA-N 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical class [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/80—Material per se process of making same
- Y10S505/815—Process of making per se
- Y10S505/818—Coating
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
- Y10T29/435—Solid dielectric type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49128—Assembling formed circuit to base
Definitions
- This invention generally relates to improving electrical connections to materials with high-dielectric-constants, such as in the construction of capacitors.
- the increasing density of integrated circuits is increasing the need for materials with high-dielectric-constants to be used in electrical devices such as capacitors.
- the current method generally utilized to achieve higher capacitance per unit area is to increase the surface area/unit area by increasing the topography, such as in trench and stack capacitors using SiO 2 or SiO 2 /Si 3 N 4 as the dielectric. This approach becomes very difficult in terms of manufacturability for devices such as the 256 Mbit and 1 Gbit DRAMs.
- single and multiple metal layers are generally used to form electrical contacts to high-dielectric-constant materials.
- the following techniques are among those now employed: (a) dielectric/platinum/substrate, (b) dielectric/platinum/tantalum/substrate, and (c) dielectric/platinum/titanium/substrate.
- the layering sequence in these examples is from the top down to the substrate (e.g. silicon).
- a similar metallization scheme may be used for the top of the dielectric film to complete the capacitor structure.
- HDC high-dielectric-constant
- dielectric constant greater than about 20.
- HDC materials are useful for the fabrication of many electrical devices, such as capacitors. However, HDC materials are generally not chemically stable when deposited directly on a semiconductor substrate, so one or more additional layers are required to provide the electrical connection between the HDC material-and the substrate. The additional layer or layers should generally be chemically stable when in contact with the substrate and also when in contact with the high-dielectric-constant material.
- HDC materials e.g. ferroelectrics
- HDC materials are generally deposited at elevated temperatures (greater than about 500° C.) in an O 2 atmosphere. It has been discovered that, in this environment, oxygen diffuses through the platinum and forms a resistive layer of Ta 2 O 5 or TiO 2 when it comes in contact with the Ta or Ti, causing high contact resistance.
- the substrate e.g. silicon itself can become oxidized during the deposition of the HDC material.
- the term oxidizable layer refers to the underlying sticking layer, or substrate, which becomes more insulating when oxidized.
- One embodiment of this invention comprises an oxidizable layer, an oxygen gettering layer overlaying the oxidizable layer, a noble metal layer overlaying the oxygen gettering layer, and a high-dielectric-constant material layer overlaying the noble metal layer.
- a method of forming an embodiment of this invention comprises the steps of forming a oxygen gettering layer on an oxidizable layer, forming a noble metal layer on the oxygen gettering layer, and forming a high-dielectric-constant material layer on the noble metal layer. Examples of processes for depositing the lower electrode materials are sputtering, evaporation, and chemical vapor deposition. Examples of processes for depositing the high-dielectric-constant material are ion-beam sputtering, chemical vapor deposition, and pulsed laser deposition.
- an electrical connection to high-dielectric-constant materials comprises an oxygen gettering layer.
- the oxygen gettering layer controls oxygen diffusion, minimizing the formation of a resistive layer either in the oxidizable layer or at the oxidizable layer/oxygen gettering layer interface.
- the oxygen gettering layer acts as a gettering site for oxygen, wherein the oxygen oxidizes the reactive metal portion of the layer, leaving the noble metal portion of the layer intact. While the oxides or suboxides that are formed are resistive, they are dispersed within the noble metal matrix, leaving a conductive path from the top of the layer to the bottom.
- the oxygen gettering layer should generally contain enough reactive metal to successfully combine with most or all of the diffused oxygen, but not so much that there is not a conductive path remaining via the noble metal component of the layer.
- the required thickness and composition of the oxygen gettering layer depend on the specific deposition parameters (temperature, O 2 pressure, etc.) of the high-dielectric-constant material. If enough oxygen reaches the oxidizable layer (e.g. the sticking layer or the substrate), a resistive layer will be formed, significantly increasing the contact resistance.
- the noble metal layer between the high-dielectric-constant material layer and the oxygen gettering layer is desirable, as it both minimizes undesirable reduction of the high-dielectric-constant material layer and lowers the amount of oxygen which enters the oxygen gettering layer.
- This invention generally provides a stable electrode for HDC materials while using standard integrated circuit materials to facilitate and economize the manufacturing process.
- FIGS. 1 - 5 are cross-sectional views of a method for constructing a metal/high-dielectric-constant material/metal capacitor on a semiconductor substrate;
- FIGS. 6 - 9 are cross-sectional views of metal/high-dielectric-constant material/metal capacitors formed on the surface of a semiconductor substrate;
- FIG. 10 is a cross-sectional view of an intermediate structure, a lower electrode formed on the surface of a semiconductor substrate, before the deposition of a high-dielectric-constant material layer;
- FIG. 11 is a cross-sectional view of an oxygen gettering layer providing electrical connection between a high-dielectric-constant material layer and an oxidizable layer;
- FIG. 12 is a cross-sectional view of a metal/high-dielectric-constant material/metal capacitor formed on the surface of a semiconductor substrate.
- FIG. 13 is a cross-sectional view of a lower electrode providing electrical connection between a high-dielectric-constant material and a semiconductor substrate.
- FIGS. 1 - 5 there is shown a method of forming a preferred embodiment of this invention, a capacitor comprising a high-dielectric-constant material and an oxygen gettering layer.
- FIG. 1 illustrates a tantalum sticking layer 32 deposited on the surface of a semiconductor body 30 .
- FIG. 2 illustrates a platinum/tantalum mixture layer 34 deposited on the tantalum sticking layer 32 .
- the ratio of platinum to tantalum in the platinum/tantalum mixture layer 34 is, in this example, between 3:1 and 1:1.5.
- FIG. 3 illustrates a platinum noble layer 36 deposited on the oxygen gettering layer 34 .
- the three layers 32 , 34 , and 36 constitute the lower electrode of the capacitor.
- FIG. 4 illustrates a barium strontium titanate layer 38 deposited on the platinum layer 36 , and also the tantalum oxide particles 40 that are formed in the oxygen gettering layer 34 as a consequence of the barium strontium titanate layer 38 being deposited in a high temperature oxygen atmosphere.
- the lower electrode comprising layers 32 , 34 , and 36 , remains electrically conductive after the barium strontium titanate deposition since the oxide particles 40 are spread throughout the oxygen gettering layer 34 .
- the barium strontium titanate layer 38 constitutes the dielectric of the capacitor.
- FIG. 5 illustrates a titanium nitride layer 42 deposited on the barium strontium titanate layer 38 , forming the upper electrode of the capacitor.
- FIG. 5 illustrates a planar geometry for all of the elements of the capacitor, this invention applies equally well to the construction of capacitor structures of more complicated geometries, including capacitors built into depressions in the semiconductor surface.
- such a capacitor structure may be formed without the tantalum layer 32 of FIG. 5, and thus the oxygen gettering layer is preventing the oxidation of the top of the substrate.
- such a capacitor structure may be formed without the platinum layer 36 of FIG. 5.
- such a capacitor structure may be formed without either the tantalum layer 32 or the platinum layer 36 of FIG. 5.
- such a capacitor structure may be formed with a lower electrode comprising a graded layer 44 in which the amounts of each metal vary with respect to depth in the layer.
- the graded layer 44 is formed such that primarily tantalum is deposited near the semiconductor substrate, and then as the layer continues to be formed, the amount of platinum deposited is increased while the amount of tantalum deposited is decreased. Near the top of the layer, primarily platinum is deposited.
- such a capacitor may be formed with a lower electrode comprising a stratified region 46 between the tantalum layer 32 and the platinum layer 36 .
- This stratified region 46 comprises relatively thin alternating layers of platinum and tantalum, which will intermix when heated, dispersing the tantalum into the platinum.
- the number and thickness of the layers in the stratified region 46 can be varied, depending on the amounts of tantalum and platinum required.
- FIG. 10 depicts the lower electrode before application of the HDC material.
- the oxygen gettering layer 34 may be formed on an oxidizable layer 48 .
- a platinum noble layer 36 is formed on the oxygen gettering layer 34
- a barium strontium titanate layer 38 is formed on the platinum layer 36 , which causes the oxide particles 40 to form.
- the tantalum sticking layer 32 may be formed on a titanium nitride barrier layer 52 , which is itself formed on a titanium silicide contact layer 50 .
- the titanium nitride layer 52 and titanium silicide layer 50 are formed by depositing a thin layer of titanium on the silicon substrate 30 , and then annealing in an NH 3 atmosphere.
- the titanium silicide layer 50 forms a low resistance contact to the underlying silicon substrate 30
- the titanium nitride layer 52 prevents the formation of insulating tantalum silicide between the silicon substrate 30 and the tantalum sticking layer 32 .
- a tantalum plug 56 is formed through a silicon dioxide insulating layer 54 , connecting the platinum/tantalum mixture layer 34 to the underlying silicon substrate 30 .
- nitrides titanium nitride, zirconium nitride; silicides: titanium silicide, tantalum silicide, tungsten silicide, molybdenum silicide; carbides: tantalum carbide; borides: titanium boride) Conductive carbides and borides (e.g. boron carbide) 34 Oxygen Platinum/tantalum Noble metal/reactive gettering mixture wherein the metal mixtures wherein layer ratio of platinum to the ratio of noble metal tantalum is between to reactive metal is 3:1 and 1:1.5 between 99:1 and 1:3 (e.g.
- platinum/tantalum mixtures platinum/tungsten mixtures, platinum/titanium mixtures
- Noble metal/reactive metal compound mixtures wherein the ratio of noble metal to reactive metal compound is between 99:1 and 1:3 (e.g. platinum/titanium nitride mixtures)
- Other combinations of above mentioned materials e.g. platinum/tantalum/tung sten mixture
- Other combinations of materials selected from Drawing Element 32 above and Drawing Element 36 below e.g. palladium/molybdenum mixtures
- Noble layer Platinum Other noble metals e.g.
- High- Barium strontium Other transition metal dielectric- titanate titanates, tantalates, constant niobates, and zirconates material e.g. barium titanate, strontium titanate, lead zirconate titanate, lead zinc niobate
- Other high dielectric constant oxides e.g. tantalum pentoxide
- Oxide Tantalum pentoxide Other oxides/suboxides particles of reactive metals and reactive metal compounds (e.g.
- palladium/molybdenum mixtures 46 Stratified Alternating layers of Alternating layers of region platinum and tantalum other noble and reactive wherein the thickness metals wherein the ratio of the platinum thickness ratio of the layers to the tantalum noble metal layers to layers is between the reactive metal 3:1 and 1:1.5 layers is between 99:1 and 1:3 (e.g. platinum/tantalum, platinum/tungsten, platinum/titanium) Alternating layers of noble metal and reactive metal compound wherein the thickness ratio of the noble metal layers to the reactive metal compound layers is between 99:1 and 1:3 (e.g. platinum/titanium nitride)
- Other combinations of above mentioned materials e.g.
- Compound semiconductors e.g. GaAs, Si/Ge, Si/C
- Contact layer Titanium silicide Other conductive silicides 52 Barrier layer Titanium nitride Other conductive nitrides Other high-temperature conductive diffusion barriers 54 Insulator Silicon dioxide Other insulators (e.g. silicon nitride) 56 Conductive Tantalum Other reactive metals Plug (e.g. tungsten, titanium, molybdenum) Reactive metal compounds (e.g.
- nitrides titanium nitride, zirconium nitride; silicides: titanium silicide, tantalum silicide, tungsten silicide, molybdenum silicide; carbides: tantalum carbide; borides: titanium boride) Conductive carbides and borides (e.g. boron carbide) Single component semiconductors (e.g. single crystalline and polycrystalline silicon, germanium) Compound semiconductors (e.g. GaAs, Si/Ge, Si/C)
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Abstract
A preferred embodiment of this invention comprises an oxidizable layer (e.g. tantalum 48), an oxygen gettering layer (e.g. platinum/tantalum mixture 34) overlaying the oxidizable layer, a noble metal layer (e.g. platinum 36) overlaying the oxygen gettering layer, and a high-dielectric-constant material layer (e.g. barium strontium titanate 38) overlaying the noble metal layer. The novel structures presented provide electrical connection to high-dielectric-constant materials without the disadvantages of current structures. The oxygen gettering layer controls oxygen diffusion, minimizing the formation of a resistive layer either in the lower electrode or at the lower electrode/substrate interface. The oxygen gettering layer acts as a gettering site for oxygen, where the oxygen oxidizes the reactive metal portion of the layer, leaving the noble metal portion of the layer intact. While the oxides/suboxides (e.g. tantalum pentoxide 40) that are formed are resistive, they are dispersed within the noble metal matrix, leaving a conductive path from the top of the layer to the bottom. This invention provides a stable and electrically conductive electrode for high-dielectric-constant materials while using standard integrated circuit materials to facilitate and economize the manufacturing process.
Description
- This invention generally relates to improving electrical connections to materials with high-dielectric-constants, such as in the construction of capacitors.
- Without limiting the scope of the invention, its background is described in connection with current methods of forming electrical connections to high-dielectric-constant materials, as an example.
- The increasing density of integrated circuits (e.g. DRAMs) is increasing the need for materials with high-dielectric-constants to be used in electrical devices such as capacitors. The current method generally utilized to achieve higher capacitance per unit area is to increase the surface area/unit area by increasing the topography, such as in trench and stack capacitors using SiO2 or SiO2/Si3N4 as the dielectric. This approach becomes very difficult in terms of manufacturability for devices such as the 256 Mbit and 1 Gbit DRAMs.
- An alternative approach is to use a high permittivity dielectric material. To be useful in electronic devices, however, reliable electrical connections should generally be constructed which do not diminish the beneficial properties of these high-dielectric-constant materials.
- Heretofore, in this field, single and multiple metal layers are generally used to form electrical contacts to high-dielectric-constant materials. For example, to provide an electrical connection to a high-dielectric-constant material which makes up a capacitor on the surface of a semiconductor substrate, the following techniques are among those now employed: (a) dielectric/platinum/substrate, (b) dielectric/platinum/tantalum/substrate, and (c) dielectric/platinum/titanium/substrate. The layering sequence in these examples is from the top down to the substrate (e.g. silicon). A similar metallization scheme may be used for the top of the dielectric film to complete the capacitor structure.
- As used herein the term high-dielectric-constant (hereafter abbreviated HDC) means a dielectric constant greater than about 20. HDC materials are useful for the fabrication of many electrical devices, such as capacitors. However, HDC materials are generally not chemically stable when deposited directly on a semiconductor substrate, so one or more additional layers are required to provide the electrical connection between the HDC material-and the substrate. The additional layer or layers should generally be chemically stable when in contact with the substrate and also when in contact with the high-dielectric-constant material.
- Current methods provide for using platinum as the noble layer to contact the high-dielectric-constant material, along with tantalum or titanium as the sticking layer to contact the substrate. However, HDC materials (e.g. ferroelectrics) are generally deposited at elevated temperatures (greater than about 500° C.) in an O2 atmosphere. It has been discovered that, in this environment, oxygen diffuses through the platinum and forms a resistive layer of Ta2O5 or TiO2 when it comes in contact with the Ta or Ti, causing high contact resistance. Further, the substrate (e.g. silicon) itself can become oxidized during the deposition of the HDC material. As used herein, the term oxidizable layer refers to the underlying sticking layer, or substrate, which becomes more insulating when oxidized.
- The disclosed structures generally provide electrical connection to HDC materials without the disadvantages of the current structures. One embodiment of this invention comprises an oxidizable layer, an oxygen gettering layer overlaying the oxidizable layer, a noble metal layer overlaying the oxygen gettering layer, and a high-dielectric-constant material layer overlaying the noble metal layer. A method of forming an embodiment of this invention comprises the steps of forming a oxygen gettering layer on an oxidizable layer, forming a noble metal layer on the oxygen gettering layer, and forming a high-dielectric-constant material layer on the noble metal layer. Examples of processes for depositing the lower electrode materials are sputtering, evaporation, and chemical vapor deposition. Examples of processes for depositing the high-dielectric-constant material are ion-beam sputtering, chemical vapor deposition, and pulsed laser deposition.
- These are apparently the first structures wherein an electrical connection to high-dielectric-constant materials comprises an oxygen gettering layer. The oxygen gettering layer controls oxygen diffusion, minimizing the formation of a resistive layer either in the oxidizable layer or at the oxidizable layer/oxygen gettering layer interface. The oxygen gettering layer acts as a gettering site for oxygen, wherein the oxygen oxidizes the reactive metal portion of the layer, leaving the noble metal portion of the layer intact. While the oxides or suboxides that are formed are resistive, they are dispersed within the noble metal matrix, leaving a conductive path from the top of the layer to the bottom. The oxygen gettering layer should generally contain enough reactive metal to successfully combine with most or all of the diffused oxygen, but not so much that there is not a conductive path remaining via the noble metal component of the layer. Generally, the required thickness and composition of the oxygen gettering layer depend on the specific deposition parameters (temperature, O2 pressure, etc.) of the high-dielectric-constant material. If enough oxygen reaches the oxidizable layer (e.g. the sticking layer or the substrate), a resistive layer will be formed, significantly increasing the contact resistance. The noble metal layer between the high-dielectric-constant material layer and the oxygen gettering layer is desirable, as it both minimizes undesirable reduction of the high-dielectric-constant material layer and lowers the amount of oxygen which enters the oxygen gettering layer. This invention generally provides a stable electrode for HDC materials while using standard integrated circuit materials to facilitate and economize the manufacturing process.
- The novel features believed characteristic of the invention are set forth in the appended claims. The invention itself, however, as well as other features and advantages thereof, will be best understood by reference to the detailed description which follows, read in conjunction with the accompanying drawings, wherein:
- FIGS.1-5 are cross-sectional views of a method for constructing a metal/high-dielectric-constant material/metal capacitor on a semiconductor substrate;
- FIGS.6-9 are cross-sectional views of metal/high-dielectric-constant material/metal capacitors formed on the surface of a semiconductor substrate;
- FIG. 10 is a cross-sectional view of an intermediate structure, a lower electrode formed on the surface of a semiconductor substrate, before the deposition of a high-dielectric-constant material layer;
- FIG. 11 is a cross-sectional view of an oxygen gettering layer providing electrical connection between a high-dielectric-constant material layer and an oxidizable layer;
- FIG. 12 is a cross-sectional view of a metal/high-dielectric-constant material/metal capacitor formed on the surface of a semiconductor substrate; and
- FIG. 13 is a cross-sectional view of a lower electrode providing electrical connection between a high-dielectric-constant material and a semiconductor substrate.
- With reference to FIGS.1-5, there is shown a method of forming a preferred embodiment of this invention, a capacitor comprising a high-dielectric-constant material and an oxygen gettering layer. FIG. 1 illustrates a
tantalum sticking layer 32 deposited on the surface of asemiconductor body 30. FIG. 2 illustrates a platinum/tantalum mixture layer 34 deposited on thetantalum sticking layer 32. The ratio of platinum to tantalum in the platinum/tantalum mixture layer 34 is, in this example, between 3:1 and 1:1.5. A method of forming this oxygen getteringlayer 34 involves depositing the platinum and tantalum in the same process chamber using two sputter guns, so that the desired percentages of each metal are deposited, forming a mixture of the two metals. Other processes such as evaporation or chemical vapor deposition could also be used to deposit the two metals. FIG. 3 illustrates a platinumnoble layer 36 deposited on the oxygen getteringlayer 34. The threelayers strontium titanate layer 38 deposited on theplatinum layer 36, and also thetantalum oxide particles 40 that are formed in the oxygen getteringlayer 34 as a consequence of the bariumstrontium titanate layer 38 being deposited in a high temperature oxygen atmosphere. The lower electrode, comprisinglayers oxide particles 40 are spread throughout the oxygen getteringlayer 34. The bariumstrontium titanate layer 38 constitutes the dielectric of the capacitor. FIG. 5 illustrates atitanium nitride layer 42 deposited on the bariumstrontium titanate layer 38, forming the upper electrode of the capacitor. Although FIG. 5 illustrates a planar geometry for all of the elements of the capacitor, this invention applies equally well to the construction of capacitor structures of more complicated geometries, including capacitors built into depressions in the semiconductor surface. - In an alternate embodiment, with reference to FIG. 6, such a capacitor structure may be formed without the
tantalum layer 32 of FIG. 5, and thus the oxygen gettering layer is preventing the oxidation of the top of the substrate. In another alternate embodiment, with reference to FIG. 7, such a capacitor structure may be formed without theplatinum layer 36 of FIG. 5. In another alternate embodiment, with reference to FIG. 8, such a capacitor structure may be formed without either thetantalum layer 32 or theplatinum layer 36 of FIG. 5. - In another alternate embodiment, with reference to FIG. 9, such a capacitor structure may be formed with a lower electrode comprising a graded
layer 44 in which the amounts of each metal vary with respect to depth in the layer. The gradedlayer 44 is formed such that primarily tantalum is deposited near the semiconductor substrate, and then as the layer continues to be formed, the amount of platinum deposited is increased while the amount of tantalum deposited is decreased. Near the top of the layer, primarily platinum is deposited. - In another alternate embodiment, with reference to FIG. 10, such a capacitor may be formed with a lower electrode comprising a
stratified region 46 between thetantalum layer 32 and theplatinum layer 36. Thisstratified region 46 comprises relatively thin alternating layers of platinum and tantalum, which will intermix when heated, dispersing the tantalum into the platinum. The number and thickness of the layers in the stratifiedregion 46 can be varied, depending on the amounts of tantalum and platinum required. FIG. 10 depicts the lower electrode before application of the HDC material. - In another alternate embodiment, with reference to FIG. 11, the
oxygen gettering layer 34 may be formed on anoxidizable layer 48. A platinumnoble layer 36 is formed on theoxygen gettering layer 34, and a bariumstrontium titanate layer 38 is formed on theplatinum layer 36, which causes theoxide particles 40 to form. - In another alternate embodiment, with reference to FIG. 12, the
tantalum sticking layer 32 may be formed on a titaniumnitride barrier layer 52, which is itself formed on a titaniumsilicide contact layer 50. Thetitanium nitride layer 52 andtitanium silicide layer 50 are formed by depositing a thin layer of titanium on thesilicon substrate 30, and then annealing in an NH3 atmosphere. Thetitanium silicide layer 50 forms a low resistance contact to theunderlying silicon substrate 30, while thetitanium nitride layer 52 prevents the formation of insulating tantalum silicide between thesilicon substrate 30 and thetantalum sticking layer 32. - In yet another alternate embodiment, with reference to FIG. 13, a
tantalum plug 56 is formed through a silicondioxide insulating layer 54, connecting the platinum/tantalum mixture layer 34 to theunderlying silicon substrate 30. - The sole Table, below, provides an overview of some embodiments and the drawings.
TABLE Drawing Generic Preferred or Other Alternate Element Term Specific Examples Examples 30 Semiconductor Silicon Other single component Substrate semiconductors (e.g. germanium) Compound semiconductors (e.g. GaAs, Si/Ge, Si/C) May be the oxidizable layer (e.g. if no sticking layer is used) 32 Sticking layer Tantalum Other reactive metals (when used, is (e.g. tungsten, titanium, generally the molybdenum) oxidizable Reactive metal layer) compounds (e.g. nitrides: titanium nitride, zirconium nitride; silicides: titanium silicide, tantalum silicide, tungsten silicide, molybdenum silicide; carbides: tantalum carbide; borides: titanium boride) Conductive carbides and borides (e.g. boron carbide) 34 Oxygen Platinum/tantalum Noble metal/reactive gettering mixture wherein the metal mixtures wherein layer ratio of platinum to the ratio of noble metal tantalum is between to reactive metal is 3:1 and 1:1.5 between 99:1 and 1:3 (e.g. other platinum/tantalum mixtures, platinum/tungsten mixtures, platinum/titanium mixtures) Noble metal/reactive metal compound mixtures wherein the ratio of noble metal to reactive metal compound is between 99:1 and 1:3 (e.g. platinum/titanium nitride mixtures) Other combinations of above mentioned materials (e.g. platinum/tantalum/tung sten mixture) Other combinations of materials selected from Drawing Element 32 above and Drawing Element 36 below (e.g. palladium/molybdenum mixtures) 36 Noble layer Platinum Other noble metals (e.g. palladium, rhodium, gold, iridium, silver) 38 High- Barium strontium Other transition metal dielectric- titanate titanates, tantalates, constant niobates, and zirconates material (e.g. barium titanate, strontium titanate, lead zirconate titanate, lead zinc niobate) Other high dielectric constant oxides (e.g. tantalum pentoxide) 40 Oxide Tantalum pentoxide Other oxides/suboxides particles of reactive metals and reactive metal compounds (e.g. other tantalum oxides, tungsten oxides, titanium oxides) 42 Upper Titanium nitride Other metal nitrides electrode Ruthenium dioxide YBa2Cu3O7-x Noble metals (e.g. platinum, palladium, rhodium, gold, iridium, silver) Other common semiconductor electrodes (e.g. silicides, aluminum) 44 Graded layer Platinum/tantalum Other noble mixture wherein the metal/reactive metal mixture is 100% mixtures wherein the tantalum near the mixture is 100% substrate and reactive metal near the transitions to 100% substrate and platinum near the transitions to 100% HDC material noble metal near the HDC material (e.g. platinum/tungsten mixture, platinum/titanium mixture) Noble metal/reactive metal compound mixtures wherein the mixture is 100% reactive metal compound near the substrate and transitions to 100% noble metal near the HDG material (e.g. platinum/titanium nitride mixture) Other combinations of above mentioned materials (e.g. platinum/tantalum/tung sten mixture) Other combinations of materials selected from Drawing Element 32 above and Drawing Element 36 above (e.g. palladium/molybdenum mixtures) 46 Stratified Alternating layers of Alternating layers of region platinum and tantalum other noble and reactive wherein the thickness metals wherein the ratio of the platinum thickness ratio of the layers to the tantalum noble metal layers to layers is between the reactive metal 3:1 and 1:1.5 layers is between 99:1 and 1:3 (e.g. platinum/tantalum, platinum/tungsten, platinum/titanium) Alternating layers of noble metal and reactive metal compound wherein the thickness ratio of the noble metal layers to the reactive metal compound layers is between 99:1 and 1:3 (e.g. platinum/titanium nitride) Other combinations of above mentioned materials (e.g. platinum/tantalum/tung sten) Other combinations of materials selected from Drawing Element 32 above and Drawing Element 36 above (e.g. palladium/molybdenum) 48 Oxidizable Tantalum Other reactive metals layer (e.g. tungsten, titanium, molybdenum) Reactive metal compounds (e.g. nitrides: titanium nitride, zirconium nitride; silicides: titanium silicide, tantalum silicide, tungsten silicide, molybdenum silicide; carbides: tantalum carbide; borides: titanium boride) Conductive carbides and borides (e.g. boron carbide) Single component semiconductors (e.g. single crystalline and polycrystalline silicon, germanium) Compound semiconductors (e.g. GaAs, Si/Ge, Si/C) 50 Contact layer Titanium silicide Other conductive silicides 52 Barrier layer Titanium nitride Other conductive nitrides Other high-temperature conductive diffusion barriers 54 Insulator Silicon dioxide Other insulators (e.g. silicon nitride) 56 Conductive Tantalum Other reactive metals Plug (e.g. tungsten, titanium, molybdenum) Reactive metal compounds (e.g. nitrides: titanium nitride, zirconium nitride; silicides: titanium silicide, tantalum silicide, tungsten silicide, molybdenum silicide; carbides: tantalum carbide; borides: titanium boride) Conductive carbides and borides (e.g. boron carbide) Single component semiconductors (e.g. single crystalline and polycrystalline silicon, germanium) Compound semiconductors (e.g. GaAs, Si/Ge, Si/C) - A few preferred embodiments have been described in detail hereinabove. It is to be understood that the scope of the invention also comprehends embodiments different from those described, yet within the scope of the claims. With reference to the structures described, electrical connections to such structures can be ohmic, rectifying, capacitive, direct or indirect, via intervening circuits or otherwise. Implementation is contemplated in discrete components or fully integrated circuits in silicon, germanium, gallium arsenide, or other electronic materials families. In general the preferred or specific examples are preferred over the other alternate examples. Unless otherwise stated, all composition ratios or percentages are in relation to composition by weight. In some intermediate structures, and in the final product, the oxygen gettering layer will generally be at least partially oxidized.
- While this invention has been described with reference to illustrative embodiments, this description is not intended to be construed in a limiting sense. Various modifications and combinations of the illustrative embodiments, as well as other embodiments of the invention, will be apparent to persons skilled in the art upon reference to the description. It is therefore intended that the appended claims encompass any such modifications or embodiments.
Claims (19)
1. A method of forming a microelectronic structure, said method comprising:
(a) forming an oxidizable layer;
(b) forming an oxygen gettering layer on said oxidizable layer;
(c) forming a noble metal layer on said oxygen gettering layer; and
(d) forming a layer of a high-dielectric-constant material on said noble metal layer, whereby said oxygen gettering layer getters diffusing oxygen, thus minimizing the formation of a oxidized resistive layer either in or on said oxidizable layer.
2. The method according to , wherein said oxygen gettering layer is part of a final structure and is at least partially oxidized.
claim 1
3. The method according to , wherein said oxygen gettering layer is part of an intermediate structure and is not substantially oxidized.
claim 1
4. The method according to , said method further comprising forming a electrically conductive layer on said high-dielectric-constant material layer.
claim 1
5. The method according to , wherein said electrically conductive layer is selected from the group consisting of: titanium nitride, ruthenium dioxide, YBa2Cu3O7−x, platinum, palladium, rhodium, gold, iridium, silver, and combinations thereof.
claim 4
6. The method according to , wherein said oxygen gettering layer comprises a mixture of at least one noble metal and at least one reactive component, wherein the ratio of said noble metal to said reactive component is between 99:1 and 1:3.
claim 1
7. The method according to , wherein said noble metal is selected from the group consisting of: platinum, palladium, rhodium, gold, iridium, silver, and combinations thereof.
claim 6
8. The method according to , wherein said reactive component is selected from the group consisting of: tantalum, tungsten, titanium, molybdenum, titanium nitride, zirconium nitride, titanium silicide, tantalum silicide, tungsten silicide, molybdenum silicide, tantalum carbide, titanium boride, boron carbide, silicon, germanium, carbon, GaAs, and combinations thereof.
claim 6
9. The method according to , wherein said oxygen gettering layer comprises a graded mixture of at least one noble metal and at least one reactive component, wherein said reactive component constitutes greater than 99% of said oxygen gettering layer near said oxidizable layer, and said reactive component transitions to constitute less than 1% of said oxygen gettering layer near said noble metal layer.
claim 1
10. The method according to , wherein said oxidizable layer is selected from the group consisting of: tantalum, tungsten, titanium, molybdenum, titanium nitride, zirconium nitride, titanium silicide, tantalum silicide, tungsten silicide, molybdenum silicide, tantalum carbide, titanium boride, boron carbide, silicon, germanium, carbon, GaAs, and combinations thereof.
claim 1
11. The method according to , wherein said noble metal layer is selected from the group consisting of: platinum, palladium, rhodium, gold, iridium, silver, and combinations thereof.
claim 1
12. The method according to , wherein said high-dielectric-constant material is selected from the group consisting of: barium strontium titanate, barium titanate, strontium titanate, lead zirconium titanate, lead zinc niobate, tantalum pentoxide, and combinations thereof.
claim 1
13. A method of forming a microelectronic capacitor comprising:
forming a first tantalum layer;
forming a layer of a platinum/tantalum mixture, wherein the ratio of said platinum to said tantalum is between 99:1 and 1:3, overlaying said first tantalum layer;
forming a layer of platinum overlaying said platinum/tantalum mixture layer;
forming a layer of high-dielectric-constant material overlaying said platinum layer; and
forming an electrically conductive layer overlaying said high-dielectric-constant material layer.
14. A microelectronic structure comprising:
an oxidizable layer;
an oxygen gettering layer overlaying said oxidizable layer;
a noble metal layer overlaying said oxygen gettering layer; and
a layer of a high-dielectric-constant material overlaying said noble metal layer, whereby said oxygen gettering layer getters diffusing oxygen, thus minimizing the formation of a oxidized resistive layer either in or on said oxidizable layer.
15. The structure of , wherein said oxygen gettering layer is part of a final structure and is at least partially oxidized.
claim 14
16. The structure of , wherein said oxygen gettering layer is part of an intermediate structure and is not substantially oxidized.
claim 14
17. The structure of , wherein said structure further comprises an electrically conductive layer overlaying said high-dielectric-constant material layer.
claim 14
18. The structure of , wherein said oxygen gettering layer comprises a mixture of at least one noble metal and at least one reactive component wherein the ratio of said noble metal to said reactive component is between 99:1 and 1:3.
claim 14
19. The structure of , wherein said oxygen gettering layer comprises a graded mixture of at least one noble metal and at least one reactive component, wherein said reactive component constitutes greater than 99% of said oxygen gettering layer near said oxidizable layer, and said reactive component transitions to constitute less than 1% of said oxygen gettering layer near said noble metal layer.
claim 14
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US7678678B2 (en) | 2001-08-30 | 2010-03-16 | Micron Technology, Inc. | Method to chemically remove metal impurities from polycide gate sidewalls |
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US11287345B2 (en) * | 2018-06-15 | 2022-03-29 | Melexis Technologies Nv | Sensor including oxygen getter metallic material for improved protection |
Also Published As
Publication number | Publication date |
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JPH077137A (en) | 1995-01-10 |
US6275370B2 (en) | 2001-08-14 |
DE69430405T2 (en) | 2002-10-31 |
US5348894A (en) | 1994-09-20 |
EP0609081B1 (en) | 2002-04-17 |
EP0609081A2 (en) | 1994-08-03 |
EP0609081A3 (en) | 1995-03-08 |
DE69430405D1 (en) | 2002-05-23 |
US6215650B1 (en) | 2001-04-10 |
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