US12018371B2 - Processing apparatus and processing method - Google Patents
Processing apparatus and processing method Download PDFInfo
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- US12018371B2 US12018371B2 US17/584,848 US202217584848A US12018371B2 US 12018371 B2 US12018371 B2 US 12018371B2 US 202217584848 A US202217584848 A US 202217584848A US 12018371 B2 US12018371 B2 US 12018371B2
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- 238000003672 processing method Methods 0.000 title claims description 4
- 239000007789 gas Substances 0.000 claims description 234
- 239000000758 substrate Substances 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 8
- 239000002994 raw material Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 2
- 238000005111 flow chemistry technique Methods 0.000 claims 1
- XMIJDTGORVPYLW-UHFFFAOYSA-N [SiH2] Chemical compound [SiH2] XMIJDTGORVPYLW-UHFFFAOYSA-N 0.000 description 60
- 238000004458 analytical method Methods 0.000 description 46
- 238000010586 diagram Methods 0.000 description 26
- 238000005979 thermal decomposition reaction Methods 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000011144 upstream manufacturing Methods 0.000 description 4
- 230000004308 accommodation Effects 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Definitions
- the present disclosure relates to a processing apparatus and a processing method.
- a gas processing apparatus which includes a processing container accommodating a boat on which substrates are placed, and a gas pipe extending vertically along the inner wall of the processing container in the vicinity of the processing container and having a plurality of gas injection holes in the longitudinal direction thereof (see, for example, Patent Document 1) are known.
- Patent Document 1 two gas inlets are provided in the gas pipe, and the injecting pressure of the gas injected through the plurality of gas injection holes is made uniform at each gas injection hole by causing the gas entering from each gas inlet to collide in the middle of the flow path in the gas pipe.
- Patent Document 1 Japanese Laid-Open Patent Publication No. 2015-196839
- a processing apparatus includes: a processing container having a substantially cylindrical shape; an injector provided to extend in a longitudinal direction along an inner side of an inner wall of the processing container and including a plurality of introduction ports into which a processing gas is introduced and a plurality of gas holes from which the processing gas introduced from the plurality of introduction ports is ejected into the processing container; and a controller configured to change a flow rate ratio of the processing gas to be introduced into the injector from the plurality of introduction ports.
- FIG. 1 is a schematic view illustrating an example of a processing apparatus according to an embodiment.
- FIG. 2 is a view illustrating an example of an injector of the processing apparatus of FIG. 1 .
- FIG. 3 is a view illustrating a first modification of the injector of the processing apparatus of FIG. 1 .
- FIG. 4 is a view illustrating a second modification of the injector of the processing apparatus of FIG. 1 .
- FIG. 5 is a view illustrating a third modification of the injector of the processing apparatus of FIG. 1 .
- FIG. 6 is a diagram showing analysis results of the mole fraction of SiH 2 when the injector (inner diameter: 13.5 mm) of FIG. 2 was used.
- FIG. 7 is a diagram showing analysis results of a mass flow rate when the injector of FIG. 2 (inner diameter: 13.5 mm) was used.
- FIG. 8 is a diagram showing analysis results of the mole fraction of SiH 2 when the injector of FIG. 3 was used.
- FIG. 9 is a diagram showing analysis results of a mass flow rate when the injector of FIG. 3 was used.
- FIG. 10 is a diagram showing analysis results of the mole fraction of SiH 2 when the injector (inner diameter: 5.4 mm) of FIG. 2 was used.
- FIG. 11 is a diagram showing analysis results of a mass flow rate when the injector of FIG. 2 (inner diameter: 5.4 mm) was used.
- FIG. 12 is a diagram showing analysis results of the mole fraction of SiH 2 when the injector of FIG. 4 was used.
- FIG. 13 is a diagram showing analysis results of a mass flow rate when the injector of FIG. 4 was used.
- FIG. 14 is a diagram showing analysis results of a mole fraction of SiH 2 when N 2 was added to Si 2 H 6 .
- FIG. 15 is a diagram showing analysis results of a mole fraction of SiH 2 when N 2 was added to Si 2 H 6 .
- FIG. 16 is a diagram showing analysis results of the mole fraction of SiH 2 when the total flow rate of Si 2 H 6 was changed.
- FIG. 17 is a diagram showing analysis results of the mole fraction of SiH 2 when the hole diameter of the gas holes was changed.
- FIG. 18 is a diagram showing analysis results of the mole fraction of SiH 2 when the hole diameter of the gas holes was changed.
- FIG. 19 is a diagram showing analysis results of the mole fraction of SiH 2 when the hole diameter of the gas holes was changed.
- the processing apparatus of the embodiment is a batch-type vertical processing apparatus that is capable of forming a film on a plurality of substrates simultaneously and collectively.
- the processing apparatus of the embodiment is an apparatus for depositing a film on each substrate through, for example, chemical vapor deposition (CVD) or atomic layer deposition (ALD).
- CVD chemical vapor deposition
- ALD atomic layer deposition
- the processing apparatus 10 includes a processing container 34 configured to accommodate therein substrates W and a lid 36 configured to close an opening at the lower end of the processing container 34 on the Z 2 side.
- the substrates W are, for example, semiconductor wafers such as silicon wafers.
- the processing apparatus 10 includes a boat 38 capable of being accommodated in the processing container 34 and configured to hold a plurality of substrates W at predetermined intervals, a gas supplier 40 configured to supply gas into the processing container 34 , and an exhauster 41 configured to exhaust the gas within the processing container 34 .
- a heater 42 configured to heat the interior of the processing container 34 is provided outside the processing container 34 .
- the processing container 34 includes a substantially cylindrical inner tube 44 having a lower open end on the Z 2 side and a ceiling 44 A on the Z 1 side, and a substantially cylindrical outer tube 46 having a lower open end on the Z 2 side and a ceiling on the Z 1 side and configured to cover the exterior of the inner tube 44 .
- the inner tube 44 and the outer tube 46 are formed of a heat-resistant material such as quartz, and are coaxially arranged in the Z 1 -Z 2 direction to form a double-tube structure.
- the ceiling 44 A of the inner tube 44 is, for example, flat.
- a nozzle accommodation portion 48 configured to accommodate therein an injector 76 , which will be described later, is formed in the Z 1 -Z 2 direction.
- a portion of the sidewall of the inner tube 44 includes a convex portion 50 formed to protrude outward in the X 1 direction.
- the interior of the formed convex portion 50 may be used as the nozzle accommodation portion 48 .
- a rectangular opening 52 having a predetermined width is formed in the Z 1 -Z 2 direction.
- the opening 52 is an exhaust port configured to evacuate the interior of the inner tube 44 .
- the length of the opening 52 in the Z 1 -Z 2 direction is equal to or longer than the length of the boat 38 . That is, at the upper end on the Z 1 side, the opening 52 is formed to be longer on the Z 1 side than the position corresponding to the upper end of the boat 38 and, at the lower end on the Z 2 side, the opening 52 is formed to be longer on the Z 2 side than the position corresponding to the lower end of the boat 38 .
- the lower end of the processing container 34 on the Z 2 side is supported by a substantially cylindrical manifold 54 formed of, for example, stainless steel.
- a flange 56 is formed at the upper end of the manifold 54 on the Z 1 side, and the lower end of the outer tube 46 on the Z 2 side is connected to the flange 56 .
- a seal member 58 such as an O-ring is provided between the flange 56 and the outer tube 46 , and the flange 56 and the outer tube 46 are connected to each other via the seal member 58 .
- a region surrounded by the processing container 34 , the manifold 54 , and the lid 36 inside the processing container 34 may be referred to as the interior of the processing container.
- An annular support portion 60 is provided on the inner wall on the Z 1 side, which is the upper portion of the manifold 54 , and the lower end of the inner tube 44 on the Z 2 side is installed on the support portion 60 so as to be supported thereon.
- the lid 36 is installed on the opening at the lower end of the manifold 54 on the Z 2 side via a seal member 62 such as an O-ring, thereby hermetically blocking the opening of the processing container 34 at the lower end on the Z 2 side, that is, the opening of the manifold 54 .
- the lid 36 is formed of, for example, stainless steel.
- a rotary shaft 66 is provided via a magnetic fluid seal 64 .
- a lower portion of the rotary shaft 66 on the Z 2 side is rotatably supported on an arm 68 A of an elevating part 68 configured as a boat elevator.
- a rotary plate 70 is provided at the upper end of the rotary shaft 66 on the Z 1 side.
- the boat 38 that holds the substrates W is placed on the rotary plate 70 via a quartz heat-retaining stage 72 . Accordingly, by raising and lowering the arm 68 A by the elevating part 68 , the lid 36 and the boat 38 move upward and downward integrally, so that the boat 38 can be put in and taken out of the processing container 34 .
- the gas supplier 40 is provided in the manifold 54 and can supply the processing gas to the inside of the inner tube 44 .
- the processing gas includes, for example, a raw-material gas and an additive gas.
- the raw-material gas is a gas for depositing a film on a substrate W, and may be a silicon-containing gas, such as monosilane (SiH 4 ) or disilane (Si 2 H 6 ).
- the additive gas is a gas for diluting the raw-material gas, and may be an inert gas such as nitrogen (N 2 ) or argon (Ar).
- the gas supplier 40 includes one injector 76 made of quartz. However, the gas supplier 40 may have another injector.
- the injector 76 includes two upright portions 76 a and 76 b .
- the two upright portions 76 a and 76 b are bent and connected in a direction approaching each other at the end portions on the Z 1 direction side, and the end portions on the Z 2 direction side are bent toward the X 1 side in an L shape and penetrate the manifold 54 to be supported.
- a plurality of gas holes 76 c are formed in one of the upright portions 76 a of the injector 76 at a predetermined interval, and a processing gas is ejected from each gas hole 76 c in a substantially horizontal direction.
- the predetermined interval is, for example, the same as the interval of the substrates W supported by the boat 38 .
- the position of each of the gas holes 76 c of the upright portion 76 a in the Z 1 -Z 2 direction is located at an intermediate position between adjacent substrates W in the Z 1 -Z 2 direction so that the processing gas can be efficiently supplied to spaces between the substrates W.
- the predetermined intervals between the respective gas holes 76 c are not limited to the above.
- a gas hole may be provided for each of the plurality of substrates W.
- each gas hole 76 c is not limited to the intermediate position between adjacent substrates W, and each gas hole 76 c may be provided at any position such as the same height as a substrate W.
- the orientation of each gas hole 76 c may be provided in any direction such as toward the center of the substrate W, toward the outer periphery of the substrate W, or toward the inner pipe 44 .
- a substantially cylindrical heater 42 is provided to surround the perimeter of the outer tube 46 .
- the heater 42 By the heater 42 , the substrates W accommodated in the processing container 34 and the gas in the upright portions 76 a and 76 b of the injector 76 can be heated.
- a processing gas source GS is connected to one upright portion 76 a of the injector 76 via a valve V 1 , a flow rate controller M 1 , and a valve V 2 .
- the processing gas source GS is connected to the other upright portion 76 b of the injector 76 via a valve V 3 , a flow rate controller M 2 , and a valve V 4 . That is, the upright portions 76 a and 76 b are connected to the same processing gas source GS. However, the upright portion 76 b may be connected to a processing gas source different from that of the upright portion 76 a.
- the processing gas from the processing gas source GS is introduced into the upright portions 76 a and 76 b via the valves V 1 to V 4 under the control of the flow rate controllers M 1 and M 2 and is ejected to the interior of the inner tube 44 of the processing container 34 from the plurality of gas holes 76 c provided in the upright portion 76 a.
- an exhaust port 82 is provided in the upper sidewall of the manifold 54 on the Z 1 side and above the support portion 60 , the gas inside the inner tube 44 is exhausted from the opening 52 through a space 84 between the inner tube 44 and the outer tube 46 .
- the exhauster 41 is connected to the exhaust port 82 .
- the exhauster 41 is provided with a pressure adjustment valve 88 , an exhaust passage 86 , and a vacuum pump 90 in this order from the exhaust port 82 , and is capable of evacuating the interior of the processing container 34 .
- the plurality of substrates W are provided inside the inner tube 44 in the Z 1 -Z 2 direction perpendicular to wafer surfaces to be the substrate surfaces.
- the processing gas is ejected to the spaces between the substrates W from the plurality of gas holes 76 c formed in the upright portion 76 a of the injector 76 .
- the ejected processing gas passes through the spaces between the substrates W so that the substrates W are processed.
- the gas that does not contribute to the processing goes out of the inner tube 44 through the opening 52 on the X 2 side and passes through the space 84 between the inner tube 44 and the outer tube 46 , to be exhausted from the exhaust port 82 .
- the overall operation of the processing apparatus 10 is controlled by a controller 95 such as a computer.
- a computer program that executes the overall operation of the processing apparatus 10 may be stored in a storage medium 96 .
- the storage medium 96 may be, for example, a flexible disk, a compact disk, a hard disk, a flash memory, or a DVD.
- the controller 95 controls the valves V 1 to V 4 and the flow rate controllers M 1 and M 2 while the substrate W is being subjected to a predetermined process (e.g., a film forming process) to change a flow rate ratio of the processing gas to be introduced into the upright portion 76 b to the processing gas to be introduced into the upright portion 76 a.
- a predetermined process e.g., a film forming process
- the silicon-containing gas As a raw-material gas is introduced into the injector, the silicon-containing gas is heated by the heater while flowing inside the injector from the upstream toward the downstream. Therefore, the silicon-containing gas ejected from the gas hole located upstream of the gas flow and the silicon-containing gas ejected from the gas hole located downstream differ in the heating time in the injector. As a result, since the flow rate and the thermal decomposition rate differ between the silicon-containing gas ejected from gas holes located upstream of the gas flow and the silicon-containing gas ejected from gas holes located downstream of the gas flow, variation in the uniformity of film characteristics of formed silicon films occurs between the substrates W.
- the injector 76 since the injector 76 has a plurality of introduction ports and the silicon-containing gas is introduced into the injector 76 through the plurality of introduction ports, it is possible to change the positional relationship between the upstream and the downstream with respect to the gas holes 76 c . This makes it possible to change the distribution of flow rates or thermal decomposition rates of the silicon-containing gas ejected toward the substrates W. As a result, it is possible to adjust the distribution of film characteristics of the silicon films to be formed between the substrates W.
- An injector 200 which is an example of the injector 76 provided in the processing apparatus 10 of FIG. 1 , will be described with reference to FIG. 2 ,
- the injector 200 includes a first upright portion 210 and a second upright portion 220 .
- the first upright portion 210 and the second upright portion 220 have the same length and are connected to each other at the upper portions thereof.
- the first upright portion 210 extends along the inner side of the inner wall of the processing container 34 .
- an upper portion is bent toward the second upright portion 220 to form a connection portion 211 to be connected to the second upright portion 220 , and a lower portion opens to form an introduction port 212 into which a processing gas is introduced.
- the first upright portion 210 has the same inner diameter from the lower portion to the upper portion.
- the first upright portion 210 includes a plurality of gas holes 213 formed at intervals along the longitudinal direction.
- the plurality of gas holes 213 are oriented toward the center of the processing container 34 .
- the plurality of gas holes 213 eject the processing gas introduced from the introduction port 212 of the first upright portion 210 and an introduction port 222 (to be described later) of the second upright portion 220 substantially horizontally toward the center of the processing container 34 .
- the plurality of gas holes 213 may be oriented in a direction different from the center side of the processing container 34 , for example, toward the inner wall of the processing container 34 .
- the second upright portion 220 extends along the inner side of the inner wall of the processing container 34 .
- the second upright portion 220 is provided at a position adjacent to the first upright portion 210 in the circumferential direction of the processing container 34 .
- the second upright portion 220 may be provided at a position adjacent to the first upright portion 210 in the radial direction of the processing container 34 .
- an upper portion is bent toward the first upright portion 210 to form a connection portion 221 to be connected to the first upright portion 210 , and a lower portion opens to form an introduction port 222 into which the processing gas is introduced.
- the second upright portion 220 has the same inner diameter from the lower portion to the upper portion.
- the inner diameter of the second upright portion 220 is the same as the inner diameter of the first upright portion 210 .
- the injector 200 it is possible to adjust the distribution of flow rates or thermal decomposition rates of the processing gas in the vertical direction by changing a flow rate ratio of the processing gas introduced into the injector 200 from the introduction ports 212 to the processing gas introduced into the injector 200 from the introduction ports 222 . This makes it possible to adjust the inter-plane uniformity of the gas supply to the substrates W.
- the flow rate ratio of the processing gas introduced into the first upright portion 210 from the introduction port 212 to the processing gas introduced into the second upright portion 220 from the introduction port 222 it is possible to shift the position where the flow velocity is slow from the upper portion to the lower portion of the first upright portion 210 . Since the residence time of the processing gas becomes long at the position where the flow velocity is slow, thermal decomposition of the processing gas is promoted. As a result, it is possible to shift the position where the thermal decomposition rate is high from the upper portion to the lower portion of the first upright portion 210 .
- an injector 300 which is a first modification of the injector 76 provided in the processing apparatus 10 of FIG. 1 , will be described.
- the injector 300 differs from the injector 200 in that the inner diameters of a first upright portion 310 and a second upright portion 320 differ from each other.
- the injector 300 includes the first upright portion 310 and the second upright portion 320 .
- the first upright portion 310 and the second upright portion 320 have the same length and are connected to each other at upper portions thereof.
- the first upright portion 310 extends along the inner side of the inner wall of the processing container 34 .
- an upper portion is bent toward the second upright portion 320 to form a connection portion 311 to be connected to the second upright portion 320 , and a lower portion opens to form an introduction port 312 into which a processing gas is introduced.
- the inner diameter of the first upright portion 310 is reduced in the connection portion 311 .
- the first upright portion 310 includes a plurality of gas holes 313 formed at intervals along the longitudinal direction.
- the plurality of gas holes 313 are oriented toward the center of the processing container 34 .
- the plurality of gas holes 313 eject the processing gas introduced from the introduction port 312 of the first upright portion 310 and an introduction port 322 (to be described later) of the second upright portion 320 substantially horizontally toward the center of the processing container 34 .
- the plurality of gas holes 313 may be oriented in a direction different from the center side of the processing container 34 , for example, toward the inner wall of the processing container 34 .
- the second upright portion 320 extends along the inner side of the inner wall of the processing container 34 .
- the second upright portion 320 is provided at a position adjacent to the first upright portion 310 in the circumferential direction of the processing container 34 .
- the second upright portion 320 may be provided at a position adjacent to the first upright portion 310 in the radial direction of the processing container 34 .
- an upper portion is bent toward the first upright portion 310 to form a connection portion 321 to be connected to the first upright portion 310 , and a lower portion opens to form an introduction port 322 into which the processing gas is introduced.
- the second upright portion 320 has the same inner diameter from the lower portion to the upper portion.
- the inner diameter of the second upright portion 320 is the same as the inner diameter of the connection portion 311 of the first upright portion 310 .
- the inner diameter of the second upright portion 320 is smaller than the inner diameter of the portion of the first upright portion 310 in which the plurality of gas holes 313 are formed.
- the injector 300 it is possible to adjust the distribution of flow rates or thermal decomposition rates of the processing gas in the vertical direction by changing a flow rate ratio of the processing gas introduced into the injector 300 from the introduction port 312 to the processing gas introduced into the injector 300 from the introduction port 322 . This makes it possible to adjust the inter-plane uniformity of the gas supply to the substrates W.
- the flow rate ratio of the processing gas introduced into the first upright portion 310 from the introduction port 312 to the processing gas introduced into the second upright portion 320 from the introduction port 322 it is possible to shift the position where the flow velocity is slow from the upper portion to the lower portion of the first upright portion 310 . Since the residence time of the processing gas becomes long at the position where the flow velocity is slow, thermal decomposition of the processing gas is promoted. As a result, it is possible to shift the position where the thermal decomposition rate is high from the upper portion to the lower portion of the first upright portion 310 .
- an injector 400 which is a second modification of the injector 76 provided in the processing apparatus 10 of FIG. 1 , will be described.
- the injector 400 differs from the injector 200 in that a plurality of gas holes 413 and 423 are provided in both a first upright portion 410 and a second upright portion 420 .
- the injector 400 includes the first upright portion 410 and the second upright portion 420 .
- the first upright portion 410 and the second upright portion 420 have the same length and are connected to each other at upper portions thereof.
- the first upright portion 410 extends along the inner side of the inner wall of the processing container 34 .
- an upper portion is bent toward the second upright portion 420 to form a connection portion 411 to be connected to the second upright portion 420 , and a lower portion opens to form an introduction port 412 into which a processing gas is introduced.
- the first upright portion 410 has the same inner diameter from the lower portion to the upper portion.
- the first upright portion 410 includes a plurality of gas holes 413 formed at intervals along the longitudinal direction.
- the plurality of gas holes 413 are oriented toward the center of the processing container 34 .
- the plurality of gas holes 413 eject the processing gas introduced from the introduction port 412 of the first upright portion 410 and an introduction port 422 (to be described later) of the second upright portion 420 substantially horizontally toward the center of the processing container 34 .
- the plurality of gas holes 413 may be oriented in a direction different from the center side of the processing container 34 , for example, toward the inner wall of the processing container 34 .
- the second upright portion 420 extends along the inner side of the inner wall of the processing container 34 .
- the second upright portion 420 is provided at a position adjacent to the first upright portion 410 in the circumferential direction of the processing container 34 .
- the second upright portion 420 may be provided at a position adjacent to the first upright portion 410 in the radial direction of the processing container 34 .
- an upper portion is bent toward the first upright portion 410 to form a connection portion 421 to be connected to the first upright portion 410 , and a lower portion opens to form an introduction port 422 into which the processing gas is introduced.
- the second upright portion 420 has the same inner diameter from the lower portion to the upper portion.
- the inner diameter of the second upright portion 420 is the same as the inner diameter of the first upright portion 410 .
- the inner diameter of the second upright portion 420 may differ from the inner diameter of the first upright portion 410 .
- the second upright portion 420 includes a plurality of gas holes 423 formed at intervals along the longitudinal direction.
- the plurality of gas holes 423 are oriented toward the same side as the plurality of gas holes 413 , that is, toward the center of the processing container 34 .
- the plurality of gas holes 423 eject the processing gas introduced from the introduction port 412 of the first upright portion 410 and an introduction port 422 of the second upright portion 420 substantially horizontally toward the center of the processing container 34 .
- the plurality of gas holes 423 may be oriented in a direction different from the center side of the processing container 34 , for example, toward the inner wall of the processing container 34 .
- the plurality of gas holes 423 may be oriented in a direction different from that of the plurality of gas holes 413 .
- Each of the plurality of gas holes 423 is provided at an intermediate position between two adjacent gas holes 413 in the vertical direction.
- the plurality of gas holes 423 may be provided at the same positions as the plurality of gas holes 413 in the vertical direction.
- the injector 400 it is possible to adjust the distribution of flow rates or thermal decomposition rates of the processing gas in the vertical direction by changing a flow rate ratio of the processing gas introduced into the injector 400 from the introduction port 412 to the processing gas introduced into the injector 400 from the introduction port 422 . This makes it possible to adjust the inter-plane uniformity of the gas supply to the substrates W.
- an injector 500 which is a third modification of the injector 76 provided in the processing apparatus 10 of FIG. 1 , will be described.
- the injector 500 differs from the injector 200 in that the injector 500 includes a third upright portion 530 connected to the middle of the first upright portion 510 .
- the injector 500 includes the first upright portion 510 , a second upright portion 520 , and the third upright portion 530 .
- the first upright portion 510 and the second upright portion 520 have the same length and are connected to each other at upper portions thereof.
- the third upright portion 530 has a length smaller than the first upright portion 510 and is connected to the middle of the first upright portion 510 .
- the first upright portion 510 extends along the inner side of the inner wall of the processing container 34 .
- an upper portion is bent toward the second upright portion 520 to form a connection portion 511 to be connected to the second upright portion 520 , and a lower portion opens to form an introduction port 512 into which a processing gas is introduced.
- the first upright portion 510 has the same inner diameter from the lower portion to the upper portion.
- the first upright portion 510 includes a plurality of gas holes 513 formed at intervals along the longitudinal direction.
- the plurality of gas holes 513 are oriented toward the center of the processing container 34 .
- the plurality of gas holes 513 eject the processing gas introduced from the introduction port 512 of the first upright portion 510 , an introduction port 522 (to be described later) of the second upright portion 520 , and an introduction port 532 (to be described later) of the third upright portion 530 substantially horizontally toward the center of the processing container 34 .
- the plurality of gas holes 513 may be oriented in a direction different from the center side of the processing container 34 , for example, toward the inner wall of the processing container 34 .
- the second upright portion 520 extends along the inner side of the inner wall of the processing container 34 .
- the second upright portion 520 is provided at a position adjacent to the first upright portion 510 in the circumferential direction of the processing container 34 .
- the second upright portion 520 may be provided at a position adjacent to the first upright portion 510 in the radial direction of the processing container 34 .
- an upper portion is bent toward the first upright portion 510 to form a connection portion 521 to be connected to the first upright portion 510 , and a lower portion opens to form an introduction port 522 into which the processing gas is introduced.
- the second upright portion 520 has the same inner diameter from the lower portion to the upper portion.
- the inner diameter of the second upright portion 520 is the same as the inner diameter of the first upright portion 510 .
- the inner diameter of the second upright portion 520 may differ from the inner diameter of the first upright portion 510 .
- the third upright portion 530 extends along the inner side of the inner wall of the processing container 34 .
- the third upright portion 530 is provided at a position adjacent to the first upright portion 510 on a side different from the second upright portion 520 in the circumferential direction of the processing container 34 .
- the third upright portion 530 , the first upright portion 510 , and the second upright portion 520 are provided in this order along the circumferential direction of the processing container 34 .
- the third upright portion 530 may be provided at a position adjacent to the first upright portion 510 in the radial direction of the processing container 34 .
- an upper portion is bent toward the first upright portion 510 to form a connection portion 531 to be connected to the first upright portion 510 , and a lower portion opens to form an introduction port 532 into which the processing gas is introduced.
- the third upright portion 530 is connected to an intermediate position in the vertical direction of the first upright portion 510 .
- the third upright portion 530 may be connected to the upper side (the connection portion 511 side) of the intermediate position in the vertical direction of the first upright portion 510 , or may be connected to the lower side (the introduction port 512 side) of the intermediate position in the vertical direction of the first upright portion 510 .
- the third upright portion 530 has the same inner diameter from the lower portion to the upper portion.
- the inner diameter of the third upright portion 530 is the same as the inner diameter of the first upright portion 510 .
- the inner diameter of the third upright portion 530 may differ from the inner diameter of the first upright portion 510 .
- the injector 500 it is possible to adjust the distribution of flow rates or thermal decomposition rates of the processing gas in the vertical direction by changing a flow rate ratio of the processing gas introduced into the injector 500 from the introduction port 512 , the processing gas introduced into the injector 500 from the introduction port 522 , and the processing gas introduced into the injector 300 from the introduction port 532 . This makes it possible to adjust the inter-plane uniformity of the gas supply to the substrates W.
- the flow rate ratio of the processing gas introduced into the first upright portion 510 from the introduction port 512 to the processing gas introduced into the second upright portion 520 from the introduction port 522 it is possible to shift the position where the flow velocity is slow from the upper portion to the lower portion of the first upright portion 510 . Since the residence time of the processing gas becomes long at the position where the flow velocity is slow, thermal decomposition of the processing gas is promoted. As a result, it is possible to shift the position where the thermal decomposition rate is high from the upper portion to the lower portion of the first upright portion 510 .
- the mole fraction of SiH 2 and the mass flow rate of Si 2 H 6 when the flow rate ratio of Si 2 H 6 introduced into the injector 200 from the introduction ports 212 and 222 was changed were analyzed.
- the inner diameter of the injector 200 was set to 13.5 mm
- the hole diameter of the gas holes 313 was set to 0.5 mm
- the number of gas holes 313 was set to 61
- the total flow rate of Si 2 H 6 was set to 500 sccm.
- the flow rate ratio X/Y of the flow rate X of Si 2 H 6 introduced into the injector 200 from the introduction port 212 and the flow rate Y of Si 2 H 6 introduced into the injector 200 from the introduction port 222 was changed as follows.
- FIG. 6 is a diagram showing analysis results of the mole fraction of SiH 2 when the injector 200 (inner diameter: 13.5 mm) of FIG. 2 was used.
- the horizontal axis represents the position of the gas hole 213
- the vertical axis represents the mole fraction of SiH 2 .
- the position of the gas hole 213 indicates at which position the gas hole is arranged from the top side of the first upright portion 210 .
- the peak position of the mole fraction of SiH 2 is shifted when the flow rate ratio X/Y is changed. Specifically, it can be seen that as the flow rate ratio X/Y is made smaller, the peak position of the mole fraction of SiH 2 is shifted from the upper portion (TOP) to the lower portion (BTM) of the injector 200 .
- FIG. 7 is a diagram showing analysis results of a mass flow rate when the injector 200 of FIG. 2 (inner diameter: 13.5 mm) was used.
- the horizontal axis represents the position of the gas hole 213
- the vertical axis represents the mass flow rate [arb.unit] of Si 2 H 6 .
- the position of the gas hole 213 indicates at which position the gas hole is arranged from the top side of the first upright portion 210 .
- the mass flow rate of Si 2 H 6 is shown in arbitrary units such that the results between multiple different flow rate ratios X/Y do not overlap.
- the mole fraction of SiH 2 and the mass flow rate of Si 2 H 6 when the flow rate ratio of Si 2 H 6 introduced into the injector 300 from the introduction ports 312 and 322 was changed were analyzed.
- the inner diameter of the first upright portion 310 was set to 13.5 mm
- the inner diameter of the second upright portion 320 was set to 5.4 mm
- the hole diameter of the gas holes 313 was set to 0.5 mm
- the number of gas holes 313 was set to 61
- the total flow rate of Si 2 H 6 was set to 500 sccm.
- the flow rate ratio X/Y of the flow rate X of Si 2 H 6 introduced into the injector 300 from the introduction port 312 to the flow rate Y of Si 2 H 6 introduced into the injector 300 from the introduction port 322 was changed as follows.
- FIG. 8 is a diagram showing analysis results of the mole fraction of SiH 2 when the injector 300 of FIG. 3 was used.
- the horizontal axis represents the position of the gas hole 313
- the vertical axis represents the mole fraction of SiH 2 .
- the position of the gas hole 313 indicates at which position the gas hole is arranged from the top side of the first upright portion 310 .
- FIG. 8 also shows the analysis results of the mole fraction of SiH 2 when the injector 200 (inner diameter: 13.5 mm) of FIG. 2 was used for comparison.
- the results of the injector 300 are indicated by solid lines
- the results of the injector 200 (inner diameter: 13.5 mm) are indicated by broken lines.
- the peak position of the mole fraction of SiH 2 is shifted when the flow rate ratio X/Y is changed. Specifically, it can be seen that as the flow rate ratio X/Y is made smaller, the peak position of the mole fraction of SiH 2 is shifted from the upper portion (TOP) to the lower portion (BTM) of the injector 300 .
- FIG. 9 is a diagram showing analysis results of a mass flow rate when the injector 300 of FIG. 3 was used.
- the horizontal axis represents the position of the gas hole 313
- the vertical axis represents the mass flow rate [arb.unit] of Si 2 H 6 .
- the position of the gas hole 313 indicates at which position the gas hole is arranged from the top side of the first upright portion 310 .
- the mole fraction of SiH 2 and the mass flow rate of Si 2 H 6 when the flow rate ratio of Si 2 H 6 introduced into the injector 200 from the introduction ports 212 and 222 was changed were analyzed.
- the inner diameter of the injector 200 was set to 5.4 mm
- the hole diameter of the gas holes 313 was set to 0.5 mm
- the number of gas holes 313 was set to 61
- the total flow rate of Si 2 H 6 was set to 500 sccm.
- the flow rate ratio X/Y of the flow rate X of Si 2 H 6 introduced into the injector 200 from the introduction port 212 to the flow rate Y of Si 2 H 6 introduced into the injector 200 from the introduction port 222 was changed as follows.
- FIG. 10 is a diagram showing analysis results of the mole fraction of SiH 2 when the injector 200 (inner diameter: 5.4 mm) of FIG. 2 was used.
- the horizontal axis represents the position of the gas hole 213
- the vertical axis represents the mole fraction of SiH 2 .
- the position of the gas hole 213 indicates at which position the gas hole is arranged from the top side of the first upright portion 310 .
- FIG. 10 also shows the analysis results of the mole fraction of SiH 2 when the injector 200 (inner diameter: 13.5 mm) of FIG. 2 was used for comparison.
- the results of the injector 200 (inner diameter: 5.4 mm) are indicated by solid lines
- the results of the injector 200 (inner diameter: 13.5 mm) are indicated by broken lines.
- the peak position of the mole fraction of SiH 2 is shifted when the flow rate ratio X/Y is changed. Specifically, it can be seen that as the flow rate ratio X/Y is made smaller, the peak position of the mole fraction of SiH 2 is shifted from the upper portion (TOP) to the lower portion (BTM) of the injector 200 .
- the mole fraction of SiH 2 becomes smaller as a whole when the injector 200 (inner diameter: 5.4 mm) was used. That is, it can be seen that, compared to the case where the injector 200 (inner diameter: 13.5 mm) was used, the thermal decomposition rate of Si 2 H 6 is suppressed to be lower when the injector 200 (inner diameter: 5.4 mm) was used.
- FIG. 11 is a diagram showing analysis results of a mass flow rate when the injector 200 of FIG. 2 (inner diameter: 5.4 mm) was used.
- the horizontal axis represents the position of the gas hole 213
- the vertical axis represents the mass flow rate [sccm] of Si 2 H 6 .
- the position of the gas hole 213 indicates at which position the gas hole is arranged from the top side of the first upright portion 210 .
- the distribution of mass flow rates of Si 2 H 6 is changed significantly when the flow rate ratio X/Y is changed.
- the flow rate ratio X/Y is larger than 1, a distribution in which the mass flow rates of Si 2 H 6 increase from the upper portion (TOP) toward the lower portion (BTM) of the injector 200 is shown.
- the flow rate ratio X/Y is smaller than 1, a distribution in which the mass flow rates of Si 2 H 6 decrease from the upper portion (TOP) toward the lower portion (BTM) of the injector 200 is shown.
- the flow rate ratio X/Y is 1, a concave distribution in which the mass flow rate of Si 2 H 6 at the position of the gas hole 213 provided at the center in the vertical direction is minimized is shown.
- the mole fraction of SiH 2 and the mass flow rate of Si 2 H 6 when the flow rate ratio of Si 2 H 6 introduced into the injector 400 from the introduction ports 412 and 422 was changed were analyzed.
- the inner diameter of the injector 400 was set to 5.4 mm
- the hole diameter of the gas holes 413 was set to 0.5 mm
- the total flow rate of Si 2 H 6 was set to 500 sccm.
- the number of gas holes 413 provided in the first upright portion 410 was set to 31, and the number of gas holes 423 provided in the second upright portion 420 was set to 30.
- the flow rate ratio X/Y of the flow rate X of Si 2 H 6 introduced into the injector 400 from the introduction port 412 to the flow rate Y of Si 2 H 6 introduced into the injector 400 from the introduction port 422 was changed as follows.
- FIG. 12 is a diagram showing analysis results of the mole fraction of SiH 2 when the injector 400 of FIG. 4 was used.
- the horizontal axis represents the positions of the gas holes 413 and 423
- the vertical axis represents the mole fraction of SiH 2 .
- the positions of the gas holes 413 and 423 indicate at which positions the gas holes are arranged from top sides of the first upright portion 410 and the second upright portion 420 , respectively.
- the position represented by “1” indicates the position of the gas hole 413 provided at the top of the first upright portion 410
- the position represented by “2” is the position of the gas hole 423 provided at the top of the second upright portion 420 .
- the mole fractions of SiH 2 are small as a whole. That is, it can be seen that the thermal decomposition rate of Si 2 H 6 is suppressed to be low as a whole. It is considered that this is because the inner diameter of the injector 400 is as small as 5.4 mm.
- FIG. 13 is a diagram showing analysis results of a mass flow rate when the injector 400 of FIG. 4 was used.
- the horizontal axis represents the positions of the gas holes 413 and 423
- the vertical axis represents the mass flow rate [arb.unit] of Si 2 H 6 .
- the positions of the gas holes 413 and 423 indicate at which positions the gas holes are arranged from top sides of the first upright portion 410 and the second upright portion 420 , respectively.
- the position represented by “1” indicates the position of the gas hole 413 provided at the top of the first upright portion 410
- the position represented by “2” is the position of the gas hole 423 provided at the top of the second upright portion 420 .
- the mole fraction of SiH 2 when N 2 was added to Si 2 H 6 introduced into the injector 300 from the introduction ports 312 and 322 was analyzed.
- the inner diameter of the first upright portion 310 was set to 13.5 mm
- the inner diameter of the second upright portion 320 was set to 5.4 mm
- the hole diameter of the gas holes 313 was set to 0.5 mm
- the number of gas holes 313 was set to 61
- the total flow rate of Si 2 H 6 was set to 500 sccm.
- the flow rate ratio X/Y of the flow rate X of Si 2 H 6 introduced into the injector 300 from the introduction port 312 to the flow rate Y of Si 2 H 6 introduced into the injector 300 from the introduction port 322 was set as follows.
- N 2 was supplied as an additive gas from the introduction port 312 or 322 having a lower flow rate of S 2 H 6 from among the flow rate X and the flow rate Y.
- the amount of N 2 added is as follows.
- FIG. 14 is a diagram showing analysis results of the mole fraction of SiH 2 when the injector 300 of FIG. 3 was used.
- FIG. 14 shows the results when the flow rate ratio X/Y was set to 490/10 and N 2 was supplied from the introduction port 322 .
- the horizontal axis represents the position of the gas hole 313
- the vertical axis represents the mole fraction of SiH 2 .
- the position of the gas hole 313 indicates at which position the gas hole is arranged from the top side of the first upright portion 310 .
- the peak height of the mole fraction of SiH 2 changes when the added amount of N 2 is changed. Specifically, it can be seen that the peak height of the mole fraction of SiH 2 becomes smaller as the added amount of N 2 increases.
- FIG. 15 is a diagram showing analysis results of the mole fraction of SiH 2 when the injector 300 of FIG. 3 was used.
- FIG. 15 shows the results when the flow rate ratio X/Y was set to 10/490 and N 2 was supplied from the introduction port 312 .
- the horizontal axis represents the position of the gas hole 313
- the vertical axis represents the mole fraction of SiH 2 .
- the position of the gas hole 313 indicates at which position the gas hole is arranged from the top side of the first upright portion 310 .
- the peak height of the mole fraction of SiH 2 changes when the added amount of N 2 is changed. Specifically, it can be seen that the peak height of the mole fraction of SiH 2 becomes smaller as the added amount of N 2 increases.
- the mole fraction of SiH 2 when the total flow rate of Si 2 H 6 introduced into the injector 200 from the introduction ports 212 and 222 was changed was analyzed.
- the inner diameter of the injector 200 was set to 5.4 mm
- the hole diameter of the gas holes 213 was set to 0.5 mm
- the number of gas holes 213 was set to 61
- the total flow rate of Si 2 H 6 was set to 700 sccm, 300 sccm, and 100 sccm.
- the flow rate ratio X/Y of the flow rate X of Si 2 H 6 introduced into the injector 200 from the introduction port 212 to the flow rate Y of Si 2 H 6 introduced into the injector 200 from the introduction port 222 was set as follows.
- FIGS. 16 to 18 are diagrams showing the analysis results of the mole fraction of SiH 2 when the total flow rate of Si 2 H 6 was changed.
- FIGS. 16 , 17 , and 18 show the results when the total flow rate of Si 2 H 6 is set to 700 sccm, 300 sccm, and 100 sccm, respectively.
- the horizontal axis represents the position of the gas hole 213
- the vertical axis represents the mole fraction of SiH 2 .
- the position of the gas hole 213 indicates at which position the gas hole is arranged from the top side of the first upright portion 210 .
- the mole fraction of SiH 2 when the hole diameter of the gas holes 213 was changed was analyzed.
- the inner diameter of the injector 200 was set to 5.4 mm
- the hole diameter of the gas holes 213 was set to 0.7 mm or 0.5 mm
- the number of gas holes 213 was set to 61
- the total flow rate of Si 2 H 6 was set to 500 sccm.
- the flow rate ratio X/Y of the flow rate X of Si 2 H 6 introduced into the injector 200 from the introduction port 212 to the flow rate Y of Si 2 H 6 introduced into the injector 200 from the introduction port 222 was set as follows.
- FIG. 19 is a diagram showing analysis results of the mole fraction of SiH 2 when the hole diameter of the gas holes was changed.
- the horizontal axis represents the position of the gas hole 213
- the vertical axis represents the mole fraction of SiH 2 .
- the position of the gas hole 213 indicates at which position the gas hole is arranged from the top side of the first upright portion 210 .
- the introduction ports 212 , 312 , 421 , and 512 are examples of the first introduction port
- the introduction ports 222 , 322 , 422 , and 522 are examples of the second introduction port
- the introduction port 532 is an example of the third introduction port.
- the inter-plane uniformity of gas supply to substrates can be adjusted.
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- Chemical Kinetics & Catalysis (AREA)
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Abstract
Description
-
- X/Y=450/50, 420/80, 400/100, 300/200, 250/250, 200/300, 100/400, 80/420, 50/450 (where, the unit is sccm for all values)
-
- X/Y=490/10, 420/80, 250/250, 80/420, 10/490 (where, the unit is sccm for all values)
-
- X/Y=490/10, 400/100, 300/200, 250/250, 200/300, 100/400, 10/490 (where, the unit is sccm for all values)
-
- X/Y=490/10, 250/250, 10/490 (where, the unit is sccm for all values)
-
- X/Y=490/10, 10/490 (where, the unit is sccm for all values)
-
- N2=0.0, 0.1, 0.2, 0.3, 0.4, 0.5 (where, the unit is sccm for all values)
-
- X/Y=630/70, 350/350, 70/630 (where, the unit is sccm for all values)
- X/Y=270/30, 150/150, 30/270 (where, the unit is sccm for all values)
- X/Y=90/10, 50/50, 10/90 (where, the unit is sccm for all values)
-
- X/Y=450/50, 250/250, 50/450 (where, the unit is sccm for all values)
Claims (13)
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JP2021015289A JP2022118628A (en) | 2021-02-02 | 2021-02-02 | Processing apparatus and processing method |
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US20220243327A1 US20220243327A1 (en) | 2022-08-04 |
US12018371B2 true US12018371B2 (en) | 2024-06-25 |
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US17/584,848 Active 2042-08-06 US12018371B2 (en) | 2021-02-02 | 2022-01-26 | Processing apparatus and processing method |
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US (1) | US12018371B2 (en) |
JP (1) | JP2022118628A (en) |
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2021
- 2021-02-02 JP JP2021015289A patent/JP2022118628A/en active Pending
-
2022
- 2022-01-21 KR KR1020220009190A patent/KR20220111660A/en unknown
- 2022-01-21 CN CN202210071453.8A patent/CN114836732A/en active Pending
- 2022-01-26 US US17/584,848 patent/US12018371B2/en active Active
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KR20220111660A (en) | 2022-08-09 |
US20220243327A1 (en) | 2022-08-04 |
CN114836732A (en) | 2022-08-02 |
JP2022118628A (en) | 2022-08-15 |
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