US11869762B2 - Semiconductor device with temperature sensing component - Google Patents
Semiconductor device with temperature sensing component Download PDFInfo
- Publication number
- US11869762B2 US11869762B2 US16/949,068 US202016949068A US11869762B2 US 11869762 B2 US11869762 B2 US 11869762B2 US 202016949068 A US202016949068 A US 202016949068A US 11869762 B2 US11869762 B2 US 11869762B2
- Authority
- US
- United States
- Prior art keywords
- temperature sensing
- sensing component
- component
- gate
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active, expires
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 80
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 39
- 239000010410 layer Substances 0.000 claims description 57
- 239000012535 impurity Substances 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 230000005669 field effect Effects 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 239000011229 interlayer Substances 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 230000006903 response to temperature Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 description 21
- 230000008859 change Effects 0.000 description 12
- 230000035945 sensitivity Effects 0.000 description 12
- 238000002513 implantation Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- -1 phosphorus ions Chemical class 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000010259 detection of temperature stimulus Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
- G01K7/223—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor characterised by the shape of the resistive element
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
- G01K7/226—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor using microstructures, e.g. silicon spreading resistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
- H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
Definitions
- the present invention relates to semiconductor technology.
- semiconductors need operate in extremely high and low temperature applications, such as electric vehicles.
- semiconductors are generally sensitive to temperature.
- a semiconductor apparatus or device such as a transistor, works in different temperature environment, the device performance changes, or even the device may be easily damaged at some extreme conditions.
- New devices and processes that assist in detecting the device temperature and adjusting the device (such as a transistor) accordingly are desirable for these applications in semiconductor field.
- the semiconductor device includes a device cell including a gate component configured to receive a gate control signal and a temperature sensing component adjacent to the device cell.
- a gate component configured to receive a gate control signal and a temperature sensing component adjacent to the device cell.
- Each of the temperature sensing component and the gate component includes polycrystalline silicon.
- FIG. 1 A illustrates a top view of a semiconductor device in accordance with an embodiment.
- FIG. 1 B illustrates a cross-section view along line A-A of FIG. 1 A .
- FIG. 1 C illustrates a cross-section view along line B-B of FIG. 1 A .
- FIG. 2 illustrates a top view of a semiconductor device in accordance with an embodiment.
- FIG. 3 illustrates a top view of a semiconductor device in accordance with an embodiment.
- FIG. 4 illustrates temperature characteristics for temperature sensing components with different thickness in accordance with an embodiment.
- FIG. 5 illustrates temperature characteristics for temperature sensing components with different temperature coefficients in accordance with an embodiment.
- FIG. 6 illustrates temperature characteristics for temperature sensing components with different ratios of length to width in accordance with an embodiment.
- FIG. 7 illustrates a method for manufacturing a semiconductor device in accordance with an embodiment.
- FIG. 8 illustrates a temperature sensing system in accordance with an embodiment.
- FIG. 9 illustrates a temperature sensing system in accordance with an embodiment.
- FIG. 10 illustrates a temperature sensing method in accordance with an embodiment.
- Example embodiments relate to semiconductor device with temperature sensing component with novel structural design and improved performance, such as fast response, improved accuracy, device protection and security, etc.
- One or more embodiments recognize one or more technical problems existing for conventional devices and methods. For example, many semiconductor devices are provided with no mechanism to detect device temperature. When operating in a harsh environment or working for long hours, the device temperature may become too high, which likely results in device failure and in the meanwhile raises safety concerns. In some existing semiconductor devices, such as metal-oxide-semiconductor field-effect transistor (MOSFET), a thermistor may be disposed near a MOSFET chip inside a packaged module. This, however, results in slow response as signals carrying temperature information need transmit a long path before being sensed and processed. Another issue is the disparity between the detected temperature by the thermistor and the actual temperature of devices because of their significant physical distance.
- MOSFET metal-oxide-semiconductor field-effect transistor
- One or more embodiments solve one or more of the technical problems associated with conventional devices as set forth above.
- One or more embodiments provide semiconductor devices with improvement in one or more aspects, such as improved accuracy, fast response, improved protection, and simple and cost-effective manufacturing process.
- Example embodiments include a semiconductor device embedding a temperature sensing component or mechanism.
- the temperature sensing component is arranged within or as part of the semiconductor device.
- the temperature sensing component is disposed adjacent to a device cell. Due to their physical proximity, the difference between the temperature sensed or detected by the temperature sensing component and the actual temperature of the device can be reduced. Furthermore, fast response can be achieved as temperature variation can be quickly caught.
- both the temperature sensing component and the gate component of the semiconductor device are formed from a same polycrystalline silicon layer.
- the temperature sensing component is doped and has a negative temperature coefficient.
- the geometrical parameters (such as thickness, ratio of length to width, etc.) and doping profiles can be easily tuned to achieve desirable temperature coefficients and/or temperature ranges to be detected.
- a temperature range from ⁇ 55 degree centigrade (° C.) to 250° C. can be achieved.
- Example embodiments include a method for manufacturing a semiconductor device with a temperature sensing component.
- the temperature sensing component and the gate component of the semiconductor device are formed from a same layer, such as a polycrystalline silicon layer. This is simple and cost-effective. For example, the method does not unduly increase process complexity.
- the temperature sensing component can be formed simply by one or more separate ion implantation steps and patterning and etching for the doped polycrystalline silicon layer. Temperature sensing-related characteristics can be easily tuned by tuning the manufacturing process, such as doping parameters (implantation energy, dose, impurity type, etc.).
- Example embodiments include a temperature sensing system.
- the temperature sensing system enables fast and actuate detection of temperature for a semiconductor device.
- the system can responsively adjust the control of the device so that the device temperature is prevented from going too high. Accordingly, the device is less likely to fail, which improves operation security and also benefits device's service life.
- FIG. 1 A illustrates a top view of a semiconductor device in accordance with an embodiment.
- the semiconductor device may be a MOSFET, an insulated-gate bipolar transistor (IGBT), a junction gate field-effect transistor (JFET), or other suitable semiconductor devices.
- the semiconductor device may be silicon (Si)-based, silicon carbide (SiC)-based, etc.
- FIG. 1 A is illustrative and non-limiting, and illustrates some elements or components rather than all elements of the semiconductor device. This approach is similarly adopted to one or more of other figures as referenced herein.
- the semiconductor device includes a device cell 110 and a temperature sensing component 120 .
- the device cell 110 includes a gate component 112 configured to receive a gate control signal.
- the gate control signal for example, is a voltage signal that controls operation states (such as ON or OFF state) of the semiconductor device.
- the temperature sensing component 120 is disposed adjacent or close to the device cell 110 . In some embodiments, the temperature sensing component 120 may be arranged within the device cell 110 . The temperature sensing component 120 detects or senses temperature of the device cell 110 . Each of the temperature sensing component 120 and the gate component 112 includes polycrystalline silicon.
- FIG. 1 B and FIG. 1 C illustrate cross-section views along lines A-A and B-B of FIG. 1 A respectively.
- layers such as an interlayer dielectric (ILD) layer 150 and metal or contact layers 160 and 162 are added in these two figures. Those skilled in the art would appreciate that these are not essential to the embodiments as described.
- ILD interlayer dielectric
- a semiconductor base 100 includes a semiconductor substrate 130 and a common layer 140 .
- the semiconductor substrate 130 may include Si, SiC, or one or more of other suitable semiconductor materials according to practical needs.
- the semiconductor substrate 130 may include one or more layers, areas, or regions.
- the semiconductor substrate 130 may have been treated, such as having been subject to multiple process steps, such as ion implantation, etching, temperature treatment, etc. such that desirable structural profiles have been formed.
- the common layer 140 is disposed on the semiconductor substrate 130 and may be a dielectric layer.
- the common layer 140 may include silicon oxide or be an oxide layer.
- the temperature sensing component 120 and the gate component 112 are disposed on the common layer 140 and are spaced from each other.
- the gate component 112 contacts the metal layer 160
- the temperature sensing component 120 contacts the metal layer 162 .
- the gate component 112 and the temperature sensing component 120 are isolated and also at least partially covered by the ILD layer 150 .
- the temperature sensing component 120 has a negative temperature coefficient (NTC).
- NTC negative temperature coefficient
- the temperature sensing component 120 is formed as a NTC resistor, such as a polycrystalline silicon resistor.
- the thickness (indicated as “d” in FIG. 1 B ) of the resistor is in a range from 200 nm to 1 micrometer (um), such as 500 nm.
- the polycrystalline silicon of the temperature sensing component 120 is doped with impurities, such as N-type impurities selected from a group consisting of phosphorus, arsenic, and nitrogen.
- the polycrystalline silicon of the temperature sensing component 120 is doped with N-type impurities having a first impurity concentration.
- the polycrystalline silicon of the gate component 112 is doped with N-type impurities having a second impurity concentration.
- the first impurity concentration is smaller than the second impurity concentration.
- the doping profile for the temperature sensing component 120 or the gate component 112 may be designed according to practical needs.
- the impurity concentration may not be uniform for each component.
- the portions of the temperature sensing component 120 contacting metal layer 162 may be doped more heavily compared with other portions of the temperature sensing component 120 .
- the temperature sensing component As illustrated in FIGS. 1 A- 1 C , as the temperature sensing component is embedded into the semiconductor device, it is unnecessary to dispose external temperature sensors. As a result, a chip module packaging such semiconductor devices can be less bulky and more compact. This is favorable to the semiconductor industry. Further, as the temperature sensing component is adjacent to the device cell, they experience almost a same environment. The temperature sensing component is able to respond timely and accurately to temperature variations. The sensed temperature can reflect more accurately what the device cell actually experiences. As such, the temperature sensing component achieves fast and accurate temperature sensing. This is particularly useful in applications that demand accurate control and high safety requirements.
- FIG. 2 illustrates a top view of a semiconductor device in accordance with an embodiment.
- the semiconductor device includes a device cell 210 having a gate component 212 and a temperature sensing component 220 adjacent to the device cell 210 .
- the gate component 212 electrically connects to other circuits (such as a gate controller) via a metal wire 214 .
- the temperature sensing component 220 connects to metal wires 224 via contacts 222 .
- the temperature sensing component 220 has a shape of a strip with a width denoted as W and a length denoted as L.
- the length L represents length of the temperature sensing component 220 between two contacts 222 .
- the ratio of length to width is denoted as L/W.
- FIG. 3 illustrates a top view of a semiconductor device in accordance with an embodiment.
- FIG. 3 shows a device cell 310 , a gate component 312 , metal wires 314 and 324 , contact 322 .
- the temperature sensing component has a shape of configuration including three strip portions 320 a , 320 b , and 320 c .
- the strip portions 320 a and 320 b are connected through a curved portion 326 .
- the strip portion 320 b passes through a curved portion 328 and then transmits to the strip portion 320 c .
- the total length of the temperature sensing component is the polycrystalline silicon length between two contacts 322 , which represents the addition of length of all strip portions and all curved portions.
- the width of one or more of the strip portions may be same or different.
- the length of one or more of the strip portions may be same or different.
- Geometric layout of the temperature sensing components as shown in FIGS. 2 and 3 is for illustrative purpose only. Other geometric design may be adopted according to practical needs. Further, as described below, doping profile (such as impurity concentration, distribution, etc.), geometric layout, etc. may be tuned to achieve desirable sensitivity and temperature range to be detected according to practical needs. For example, the temperature sensing components may be designed to operate in a temperature range from ⁇ 55° C. to 250° C.
- temperature sensing components may detect temperatures such as ⁇ 55° C., ⁇ 45° C., ⁇ 35° C., ⁇ 25° C., ⁇ 15° C., ⁇ 5° C., 5° C., 15° C., 50° C., 100° C., 150° C., 200° C., 250° C., to name a few.
- temperatures such as ⁇ 55° C., ⁇ 45° C., ⁇ 35° C., ⁇ 25° C., ⁇ 15° C., ⁇ 5° C., 5° C., 15° C., 50° C., 100° C., 150° C., 200° C., 250° C., to name a few.
- FIG. 4 illustrates temperature characteristics for temperature sensing components with different thickness in accordance with an embodiment. It illustrates the relationship between sheet resistance and temperature.
- Each temperature sensing component is formed of a polycrystalline silicon layer. Assuming all other factors same, curve 410 corresponds to the temperature sensing component with smaller thickness (thinner polycrystalline silicon layer), while curve 420 corresponds to the temperature sensing component with larger thickness (thicker polycrystalline silicon layer). As illustrated, the thinner polycrystalline silicon layer has a larger sensitivity compared with the thicker one, but smaller temperature range to be detected.
- FIG. 5 illustrates temperature characteristics for temperature sensing components with different temperature coefficients in accordance with an embodiment. It illustrates the relationship between resistivity and temperature.
- Each temperature sensing component is formed of a polycrystalline silicon layer. Assuming all other factors same, curve 510 corresponds to the temperature sensing component with a larger temperature coefficient in its absolute value, while curve 520 corresponds to the temperature sensing component with a smaller temperature coefficient in its absolute value. As illustrated, the one with larger temperature coefficient has a larger sensitivity compared with the smaller one, but smaller temperature range to be detected.
- FIG. 6 illustrates temperature characteristics for temperature sensing components with different ratios of length to width in accordance with an embodiment. It illustrates the relationship between resistance and temperature.
- Each temperature sensing component is formed of a polycrystalline silicon layer. Assuming all other factors same, curve 610 corresponds to the temperature sensing component with a larger ratio of length to width, while curve 620 corresponds to the temperature sensing component with a smaller ratio of length to width. As illustrated, the one with larger ratio of length to width has a larger sensitivity compared with the smaller one, but smaller temperature range to be detected.
- FIGS. 4 - 6 are for illustrative purpose only. The curves thereof are illustrated as straight lines (linear relationship). It would be appreciated that in many scenarios, the physical parameters as illustrated may have non-linear relationship.
- temperature sensing components can be easily and conveniently tuned. According to scenarios to be applied and budget, temperature sensing components may be designed accordingly.
- FIG. 7 illustrates a method for manufacturing a semiconductor device in accordance with an embodiment.
- the method may be implemented to manufacture semiconductor devices as illustrated in one of more of FIGS. 1 A- 1 C, 2 , 3 , or one or more variations thereof.
- a semiconductor base including a dielectric layer is provided.
- the semiconductor base has been subject to multiple process steps.
- the semiconductor base may has been properly processed to include one or more wells, source regions, drain regions, etc. ready for subsequent processing to form one or more field-effect transistors, such as MOSFET.
- the dielectric layer is a gate oxide layer.
- a polycrystalline silicon layer is formed onto the dielectric layer.
- a polycrystalline silicon layer with a thickness of 500 nm is deposited onto the gate oxide layer.
- the polycrystalline silicon layer is processed to form a gate component and a temperature sensing component spacing apart from the gate component.
- a photomask is employed to cover region of the gate component. Then ion implantation is conducted on region of the temperature sensing component by injecting N-type ions (such as phosphorus ions, arsenic ions, or nitrogen ions) at an energy of 40 keV and a dose of 1E13/cm 2 -5E14/cm 2 .
- N-type ions such as phosphorus ions, arsenic ions, or nitrogen ions
- blanket implantation is used as an alternative to implantation with photomask.
- region of temperature sensing component is shielded or covered with another photomask.
- Ion implantation is conducted on region of the gate component by injecting N-type ions (such as phosphorus ions, arsenic ions, or nitrogen ions) at an energy of 40 keV and a dose of 1E15/cm 2 -5E15/cm 2 .
- N-type ions such as phosphorus ions, arsenic ions, or nitrogen ions
- a temperature treatment such as annealing, may be conducted at a proper condition, such as annealing at 900° C. for 30 minutes in nitrogen atmosphere.
- one or more parameters may be tuned or adjusted to obtain desirable characteristics of temperature sensing components.
- process parameters such as ion type, implantation energy, dose, single implantation or chain implantations, temperature treatment, etc.
- sensitivity of the temperature sensing component is tuned.
- by selecting a proper thickness of polycrystalline silicon layer to be deposited sensitivity of the temperature sensing component is tuned.
- sensitivity of the temperature sensing component is tuned.
- the geometric layout includes, for example, geometric shape, width, length, ratio of length to width of the temperature sensing component, etc.
- the geometric shape may be regular, such as a strip shape as described with reference to FIG. 2 .
- the geometric shape may be irregular, which may be difficult to describe but practical in use.
- Tuning of the geometric layout may be achieved, for example, by using a photomask with a desirable pattern that maps the pattern onto the polycrystalline silicon layer. With change in sensitivity, temperature range to be detected by the temperature sensing component may change accordingly.
- doping of the temperature sensing component is prior to doping of the gate component. This order is not essential.
- region of the gate component is doped before region of the temperature sensing component.
- the ion implantation process may be a single implantation or a chain of implantations with multiple implantation steps, each with same or different implantation conditions, such as energy and dose.
- the manufacturing method as illustrated is simple and cost-effective. It requires no extra layer. Rather, it introduces several steps of treatment on a polycrystalline silicon layer such that the polycrystalline silicon layer is patterned into two parts, one evolving into a temperature sensing component while the other evolving into a gate component. Further, tuning characteristics of the temperature sensing component is easy, convenient, and flexible. In many scenarios, this can be achieved by changing one or more process parameters or geometric layout. Manufacturing temperature sensing component with various characteristics generally does not require an extra new equipment, and thus can be implemented in a same production line.
- FIG. 8 illustrates a temperature sensing system in accordance with an embodiment.
- the temperature sensing system includes a semiconductor device 810 and a controller 830 .
- the semiconductor device 810 may be, for example, a specific implementation of one or more of the semiconductor devices as illustrated in FIGS. 1 A- 1 C, 2 , 3 or variations thereof.
- the semiconductor device 810 includes a device cell 812 and a temperature sensing component 820 adjacent to the device cell 812 .
- the temperature sensing component 820 may be, for example, a specific implementation of one or more of the temperature sensing components as illustrated in FIGS. 1 A- 1 C, 2 , 3 or variations thereof.
- the controller 830 may include one or more processors, microprocessors, and/or microcontrollers.
- the controller 830 may include algorithms or software that are programmed to execute one or more methods or steps or perform one or more functions.
- the controller 830 may be implemented as electric circuits that are packaged or integrated as one or more modules to achieve one or more algorithms or perform one or more functions.
- the controller 830 electrically communicates with both the temperature sensing component 820 and the device cell 812 . As such, the controller 830 receives temperature information from the temperature sensing component 820 , and also imposes gate control signal to the device cell 812 to control the operation states of the semiconductor device 810 .
- temperature of the semiconductor device 810 in particular the device cell 812 , may be determined by environmental temperature and/or its self-heating. This will change device performance and raise safety concerns, such as in certain extreme temperature.
- the temperature sensing component 820 monitors the semiconductor device 810 and generates temperature information associated with the semiconductor device 810 . The temperature information may be generated in response to temperature changes of the semiconductor device 810 .
- the temperature sensing component 820 then sends the temperature information to the controller 830 .
- the controller 830 processes the received temperature information and takes proper actions accordingly. The actions may include turning on or off semiconductor device 810 , raising or lowering the gate voltage, making alarm, etc. For example, if the temperature is high, the controller 830 may lower the gate voltage applied to the device cell 812 , thereby suppressing or mitigating heat damage.
- FIG. 9 illustrates a temperature sensing system in accordance with an embodiment.
- the temperature sensing system may be, for example, a specific implementation of the system with reference to FIG. 8 .
- the temperature sensing system includes a semiconductor device 910 and a gate driver integrated circuit (IC) 930 .
- the semiconductor device 910 includes a MOSFET cell 912 .
- a NTC resistor 920 is disposed within the semiconductor device 910 and adjacent to the MOSFET cell 912 .
- the gate component of the MOSFET cell 912 and the NTC resistor 920 are formed of polycrystalline silicon and spaced apart from each other.
- the gate driver IC 930 may be, for example, a specific implementation of the controller 830 with reference to FIG. 8 .
- the gate driver IC 930 drives the semiconductor device 910 so that the semiconductor device 910 operates in various operation states.
- the gate driver IC 930 also receives temperature information from the NTC resistor 920 and responsively adjust the control of the semiconductor device 910 .
- the NTC resistor 920 is physically close to the MOSFET cell 912 and they feel same or similar temperature. In response to a change in temperature of the MOSFET cell 912 , resistance of the NTC resistor 920 changes in an opposite direction and voltage across the NTC resistor 920 changes accordingly.
- the gate driver IC 930 electrically connects to the NTC resistor 920 , it receives temperature information, such as voltage signals, from the NTC resistor 920 via terminal T. Based on the temperature information, the gate driver IC 930 determines the temperature of the MOSFET cell 912 . The gate driver IC 930 then decides whether to adjust the gate control signal for the MOSFET cell 912 , and if yes, sends an adjusted gate control signal via a terminal denoted as Vg to the MOSFET cell 912 .
- FIG. 10 illustrates a temperature sensing method in accordance with an embodiment.
- the method may be, for example, a specific implementation that can be implemented by the system as illustrated in FIG. 9 .
- a gate driver IC supplies a gate control signal to turn on a MOSFET cell.
- the gate control signal is larger than the threshold voltage of the MOSFET cell so that the MOSFET cell is switched on.
- the values of the gate control signal may be adjusted so that the MOSFET cell operates in a different operating state.
- the MOSFET cell operates, temperature raises and adds up to the environment temperature.
- the NTC resistor is subject to a same or similar heat environment. As such, in response to the temperature increase, resistance of the NTC resistor decreases. Accordingly, voltage across the NTC resistor decreases. The voltage signal as a resistance feedback is transmitted to the gate driver IC.
- the gate driver IC calculates the temperature and adjust the gate control signal.
- the gate driver IC includes algorithms that map a received voltage value to a temperature value. As such, the gate driver IC calculates the temperature from the received voltage signal. The gate driver IC then compares the calculated temperature with a preset threshold.
- the gate driver IC when the temperature is larger than a first threshold (such as 100° C.), the gate driver IC considers the MOSFET cell hot and then lower the gate control signal so that operating current of the MOSFET cell lowers. In another embodiment, when the temperature reaches a second threshold (such as 175° C.), the gate driver IC considers the MOSFET cell too hot and in a danger situation that would permanently damage the cell, the gate driver IC then reduces the gate voltage signal to below zero, and turns off the MOSFET cell, thereby preventing the MOSFET cell from being damaged. In some other embodiments, when the temperature is low, the gate driver IC may increase the gate control signal to increase the operating current of the MOSFET cell.
- a first threshold such as 100° C.
- the gate voltage signal adjustment can be incremental with preset intervals. It can also be continuous according to the relationship of calculated temperature and gate control signal.
- NTC resistors the temperature sensing components with reference to one or more figures are illustrated as NTC resistors.
- PTC positive temperature coefficient
- a semiconductor device may include two or more device cells.
- the device cells may include same or different kinds of devices, such as MOSFET, IGBT, JFET, etc.
- a device cell may include one device, or multiple devices.
- a semiconductor device may include one temperature sensing component, or may include multiple temperature sensing components.
- geometric layout refers to geometric parameters.
- a geometric layout of a polycrystalline silicon layer includes, but not limited to, shape, thickness, width, length, ratio of length to width, regularity or irregularity of the polycrystalline silicon layer.
- the term “sensitivity” refers to the percent change in measurable output for a given change in temperature.
- the sensitivity may be a percent change in sheet resistance for a unit change in temperature.
- the sensitivity may be a percent change in resistance for a unit change in temperature.
- the sensitivity may be a percent change in resistivity for a unit change in temperature.
- Other measurable output may also be possible.
- temperature range refers to a range of temperature that a temperature sensing component is able to detect or sense.
- temperature information refers to information associated with or related to temperature such that the temperature can be derived directly or indirectly from this information.
- the temperature information may be one or more electrical signals (such as temperature signals, voltage signals, current signals, etc.) that carry or encode information related to temperature to such an extent that by processing (such as decoding) the information, the temperature can be obtained.
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/949,068 US11869762B2 (en) | 2020-10-13 | 2020-10-13 | Semiconductor device with temperature sensing component |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/949,068 US11869762B2 (en) | 2020-10-13 | 2020-10-13 | Semiconductor device with temperature sensing component |
Publications (2)
Publication Number | Publication Date |
---|---|
US20220115289A1 US20220115289A1 (en) | 2022-04-14 |
US11869762B2 true US11869762B2 (en) | 2024-01-09 |
Family
ID=81078085
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/949,068 Active 2042-02-02 US11869762B2 (en) | 2020-10-13 | 2020-10-13 | Semiconductor device with temperature sensing component |
Country Status (1)
Country | Link |
---|---|
US (1) | US11869762B2 (en) |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7145201B2 (en) | 2003-12-30 | 2006-12-05 | Infineon Technologies Ag | Semiconductor component |
US20070178636A1 (en) * | 2006-01-30 | 2007-08-02 | Sanyo Electric Co., Ltd. | Method of manufacturing semiconductor device |
US7306967B1 (en) * | 2003-05-28 | 2007-12-11 | Adsem, Inc. | Method of forming high temperature thermistors |
US20100197106A1 (en) * | 2009-02-03 | 2010-08-05 | Samsung Electronics Co., Ltd. | Semiconductor embedded resistor generation |
US20140264343A1 (en) | 2013-03-13 | 2014-09-18 | D3 Semiconductor LLC | Device architecture and method for temperature compensation of vertical field effect devices |
US20140353665A1 (en) * | 2013-05-29 | 2014-12-04 | Mitsubishi Electric Corporation | Semiconductor device and manufacturing method thereof |
US20150035568A1 (en) * | 2013-08-01 | 2015-02-05 | Taiwan Semiconductor Manufacturing Company Ltd. | Temperature detector and controlling heat |
US20150098489A1 (en) * | 2013-10-07 | 2015-04-09 | Samsung Electronics Co., Ltd. | Semiconductor devices including electrodes for temperature measurement |
CN102881679B (en) | 2012-09-24 | 2015-04-15 | 株洲南车时代电气股份有限公司 | IGBT (insulated gate bipolar transistor) chip integrating temperature and current sensing function |
US20180277641A1 (en) * | 2017-03-21 | 2018-09-27 | Infineon Technologies Ag | Method for processing a semiconductor workpiece and semiconductor device |
US20180301553A1 (en) * | 2017-04-13 | 2018-10-18 | Infineon Technologies Austria Ag | Semiconductor Device Comprising a Trench Structure |
US20200006495A1 (en) | 2016-03-09 | 2020-01-02 | Infineon Technologies Ag | Wide bandgap semiconductor device including transistor cells and compensation structure |
-
2020
- 2020-10-13 US US16/949,068 patent/US11869762B2/en active Active
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7306967B1 (en) * | 2003-05-28 | 2007-12-11 | Adsem, Inc. | Method of forming high temperature thermistors |
US7145201B2 (en) | 2003-12-30 | 2006-12-05 | Infineon Technologies Ag | Semiconductor component |
US20070178636A1 (en) * | 2006-01-30 | 2007-08-02 | Sanyo Electric Co., Ltd. | Method of manufacturing semiconductor device |
US20100197106A1 (en) * | 2009-02-03 | 2010-08-05 | Samsung Electronics Co., Ltd. | Semiconductor embedded resistor generation |
CN102881679B (en) | 2012-09-24 | 2015-04-15 | 株洲南车时代电气股份有限公司 | IGBT (insulated gate bipolar transistor) chip integrating temperature and current sensing function |
US20140264343A1 (en) | 2013-03-13 | 2014-09-18 | D3 Semiconductor LLC | Device architecture and method for temperature compensation of vertical field effect devices |
US20140353665A1 (en) * | 2013-05-29 | 2014-12-04 | Mitsubishi Electric Corporation | Semiconductor device and manufacturing method thereof |
US20150035568A1 (en) * | 2013-08-01 | 2015-02-05 | Taiwan Semiconductor Manufacturing Company Ltd. | Temperature detector and controlling heat |
US20150098489A1 (en) * | 2013-10-07 | 2015-04-09 | Samsung Electronics Co., Ltd. | Semiconductor devices including electrodes for temperature measurement |
US20200006495A1 (en) | 2016-03-09 | 2020-01-02 | Infineon Technologies Ag | Wide bandgap semiconductor device including transistor cells and compensation structure |
US20180277641A1 (en) * | 2017-03-21 | 2018-09-27 | Infineon Technologies Ag | Method for processing a semiconductor workpiece and semiconductor device |
US20180301553A1 (en) * | 2017-04-13 | 2018-10-18 | Infineon Technologies Austria Ag | Semiconductor Device Comprising a Trench Structure |
Also Published As
Publication number | Publication date |
---|---|
US20220115289A1 (en) | 2022-04-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0783766B1 (en) | Power semiconductor devices | |
EP0224274B1 (en) | Semiconductor device with protective means against overheating | |
US5237194A (en) | Power semiconductor device | |
US8129780B2 (en) | Semiconductor device having a trench type high-power MISFET | |
US5796290A (en) | Temperature detection method and circuit using MOSFET | |
US9343381B2 (en) | Semiconductor component with integrated crack sensor and method for detecting a crack in a semiconductor component | |
US6236110B1 (en) | Power semiconductor module | |
JP6132032B2 (en) | Semiconductor device and manufacturing method thereof | |
US11610880B2 (en) | Power MOS device having an integrated current sensor and manufacturing process thereof | |
JP2009528692A (en) | Method and apparatus for measuring the temperature of a semiconductor substrate | |
US11869762B2 (en) | Semiconductor device with temperature sensing component | |
US9748376B2 (en) | Power FET with integrated sensors and method of manufacturing | |
US7808067B2 (en) | Semiconductor device and temperature sensor structure for a semiconductor device | |
CN215600372U (en) | Semiconductor device and temperature sensing system | |
CN114628485A (en) | Semiconductor device, method for manufacturing semiconductor device, and temperature sensing system | |
WO2007006337A1 (en) | A temperature sensing device | |
US6242314B1 (en) | Method for fabricating a on-chip temperature controller by co-implant polysilicon resistor | |
US20220416080A1 (en) | Silicon carbide semiconductor device | |
KR100783765B1 (en) | Silicon carbide semiconductor gas sensor device and the manufacturing method | |
KR100850091B1 (en) | Apparatus for providing temperature sens using of semiconductor device and method therefor | |
US6291873B1 (en) | Semiconductor device having a resistive element connected to a transistor and substrate | |
US20230015578A1 (en) | Temperature sensor integrated in a transistor array | |
CN116964421A (en) | Temperature sensor integrated in transistor array | |
CN113066726A (en) | Method for realizing novel field effect transistor | |
CN117878097A (en) | Semiconductor test device, semiconductor wafer, and mobility test method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: ALPHA POWER SOLUTIONS LIMITED, CHINA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHAN, WAI TIEN;SUN, QIAN;LEE, HO NAM;REEL/FRAME:054040/0983 Effective date: 20201007 |
|
FEPP | Fee payment procedure |
Free format text: ENTITY STATUS SET TO UNDISCOUNTED (ORIGINAL EVENT CODE: BIG.); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY |
|
FEPP | Fee payment procedure |
Free format text: ENTITY STATUS SET TO SMALL (ORIGINAL EVENT CODE: SMAL); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: FINAL REJECTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NOTICE OF ALLOWANCE MAILED -- APPLICATION RECEIVED IN OFFICE OF PUBLICATIONS |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: PUBLICATIONS -- ISSUE FEE PAYMENT RECEIVED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: PUBLICATIONS -- ISSUE FEE PAYMENT VERIFIED |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |