US11152454B2 - Method of forming a semiconductor device having a resistor and structure therefor - Google Patents
Method of forming a semiconductor device having a resistor and structure therefor Download PDFInfo
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- US11152454B2 US11152454B2 US16/447,005 US201916447005A US11152454B2 US 11152454 B2 US11152454 B2 US 11152454B2 US 201916447005 A US201916447005 A US 201916447005A US 11152454 B2 US11152454 B2 US 11152454B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0676—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type comprising combinations of diodes, or capacitors or resistors
Definitions
- the present invention relates, in general, to electronics, and more particularly, to semiconductors, structures thereof, and methods of forming semiconductor devices.
- the semiconductor industry utilized various methods and structures to form high-voltage resistors that could be utilized to form a signal that is representative of a received high-voltage.
- the high voltage could be in excess of two hundred to fifteen hundred (200 to 1500) volts.
- the resistor was formed to overlie portions of a semiconductor device to assist in forming the signal. Examples of some resistors can be found in U.S. Pat. No. 7,306,999 B2 and U.S. Pat. No. 7,955,943 B2 which are both incorporated herein by reference.
- the resistor had to have a large resistance value which often required forming the underlying semiconductor device to be very large. This often resulted in increased cost.
- the resistor also may have caused high electric fields.
- the high electric fields often resulted in reduced performance of the device.
- FIG. 1 schematically illustrates an example of a portion of an embodiment of a high-voltage circuit that includes a semiconductor device in accordance with the present invention
- FIG. 2 illustrates an example of an enlarged cross-sectional portion of an embodiment of a semiconductor device that may be an alternate embodiment of the device of FIG. 1 in accordance with the present invention
- FIG. 3 graphically illustrates an enlarged plan view of portion of an example of an embodiment of a pattern for a portion of the device of FIGS. 1 and/or 2 in accordance with the present invention
- FIG. 4 graphically illustrates an enlarged plan view of an example of a portion of an embodiment of another high-voltage circuit that may be an alternate embodiment of the circuit of FIG. 3 and includes a semiconductor device in accordance with the present invention
- FIG. 5 illustrates an example of an enlarged cross-sectional portion of an embodiment of a semiconductor device that may be an alternate embodiment of the device of FIGS. 1 and 2 or FIG. 4 in accordance with the present invention
- FIG. 6 illustrates an example of an enlarged cross-sectional portion of an embodiment of a semiconductor device that may be an alternate embodiment of the device of FIG. 5 in accordance with the present invention
- FIG. 7 illustrates an example of an enlarged cross-sectional portion of an embodiment of a semiconductor device that may be an alternate embodiment of the device of FIG. 6 in accordance with the present invention.
- FIG. 8 graphically illustrates an enlarged plan view of an example of a portion of an embodiment of another high-voltage circuit 300 that may be an alternate embodiment of the circuit of FIG. 3 or 4 and includes a semiconductor device in accordance with the present invention.
- current carrying element or current carrying electrode means an element of a device that carries current through the device such as a source or a drain of an MOS transistor or an emitter or a collector of a bipolar transistor or a cathode or anode of a diode
- a control element or control electrode means an element of the device that controls current through the device such as a gate of an MOS transistor or a base of a bipolar transistor.
- one current carrying element may carry current in one direction through a device, such as carry current entering the device, and a second current carrying element may carry current in an opposite direction through the device, such as carry current leaving the device.
- the devices may be explained herein as certain N-channel or P-channel devices, or certain N-type or P-type doped regions, a person of ordinary skill in the art will appreciate that complementary devices are also possible in accordance with the present invention.
- the conductivity type refers to the mechanism through which conduction occurs such as through conduction of holes or electrons, therefore, that conductivity type does not refer to the doping concentration but the doping type, such as P-type or N-type.
- asserted can be either a high voltage or a high logic or a low voltage or low logic depending on whether positive or negative logic is used and negated may be either a low voltage or low state or a high voltage or high logic depending on whether positive or negative logic is used.
- a positive logic convention is used, but those skilled in the art understand that a negative logic convention could also be used.
- the terms first, second, third and the like in the claims or/and in the Detailed Description of the Drawings, as used in a portion of a name of an element are used for distinguishing between similar elements and not necessarily for describing a sequence, either temporally, spatially, in ranking or in any other manner.
- FIG. 1 schematically illustrates an example of a portion of an embodiment of a high-voltage circuit 200 that includes a semiconductor device 207 having a high-voltage resistor 214 .
- resistor 214 may function as field plate and may sometimes be referred to as a resistive field plate.
- Circuit 200 receives a high voltage (HV) between an input terminal 203 and a common return terminal 204 .
- the high voltage (HV) may be either an alternating DC voltage (such as a rectified AC voltage), or a DC voltage, or other type of high-voltage.
- Device 207 includes an input terminal 208 that receives the high voltage (HV), and may in some embodiments include a current output terminal 209 . Device 207 may also include a reference terminal 218 and an optional signal output 210 . Device 207 usually includes an active element, such as for example a transistor 213 , and a high-voltage resistor 214 . Resistor 214 includes first terminal 217 and a second terminal 219 . In an embodiment, high-voltage resistor 214 may be formed as a resistor divider that includes a first resistor element 215 connected in series with a second resistor element 216 and with output 210 formed at a common node between elements 215 and 216 . In other embodiments, element 216 and/or output 210 may be omitted and element 215 may be connected between terminals 217 and 219 .
- HV high voltage
- Device 207 usually includes an active element, such as for example a transistor 213 , and a high-voltage resistor 214 . Resistor
- Circuit 200 may also include other circuit elements that are connected to device 207 such as for example a circuit connected between terminal 209 and return terminal 204 .
- FIG. 2 illustrates an example of an enlarged cross-sectional portion of an embodiment of a semiconductor device 220 that may have an embodiment that may be an alternate embodiment of device 207 illustrated in FIG. 1 .
- FIG. 3 illustrates an enlarged plan view of a portion of an example of an embodiment of portions of device 220 .
- FIG. 2 is illustrated along a section line 2 - 2 of FIG. 3 . This description has references to FIGS. 1-3 .
- An embodiment of device 220 may include transistor 213 and a high-voltage resistor 221 that may be an alternate embodiment of resistor 214 .
- Device 220 is formed on a semiconductor substrate 102 and has a doped region 104 that is formed on substrate 102 .
- region 104 may extend into substrate 102 .
- An embodiment may include that substrate 102 and region 104 are formed with opposite conductivity types.
- substrate 102 may be P-type semiconductor material and region 104 may be N-type semiconductor material.
- Device 220 may have an embodiment that includes forming region 104 as a drain of transistor 213 .
- a doped region 106 may be formed on substrate 102 and within region 104 to facilitate forming a low resistance electrical connection to region 104 .
- region 106 facilitates forming a substantially ohmic contact to region 104 .
- region 106 may be the same conductivity type as region 104 but more heavily doped.
- region 106 may be heavily doped N-type semiconductor material.
- region 106 is illustrated as one solid region, region 106 may be formed as other shapes including a hollow circular region.
- region 106 may be near an interior edge 228 of region 104 .
- a drain conductor 107 is formed on region 106 to function as a drain electrode or drain conductor of transistor 213 .
- An embodiment of device 220 may also include a doped region 231 that electrically isolates the portion of substrate 102 that overlies region 231 from the remainder of substrate 102 .
- An embodiment of region 231 may have a conductivity that is opposite to that of substrate 102 . In some embodiments, region 231 may be omitted.
- a doped region 165 may be formed on and extending into substrate 102 and spaced apart from region 104 .
- An embodiment of region 165 may form a source region for transistor 213 , thus, region 165 may be doped with the same conductivity type as region 104 .
- Some embodiments may include a source contact region 164 that may be formed in region 165 to assist in forming a low resistance or substantially ohmic connection to region 165 .
- a source electrode or conductor 166 may be formed on region 165 to provide an electrical connection to region 165 .
- Region 165 may have an embodiment that completely surrounds the outer periphery of region 104 and spaced apart from region 104 .
- An embodiment of the outer periphery may be along an outer edge 225 of region 104 . Outer edge 225 may be distal from interior edge 228 .
- a gate electrode or gate conductor 226 may be formed overlying a portion of substrate 102 between regions 104 and 165 to form a channel region 167 for transistor 213 .
- a gate insulator 227 may be formed underlying conductor 226 , overlying region 167 , and interposed between conductor 226 and substrate 102 .
- An insulator 113 typically is formed on the surface of substrate 102 to insulate region 104 and substrate 102 from some other elements of device 220 . Those skilled in the art will appreciate that insulator 113 may have one or more layers instead of the single layer illustrated in FIG. 2 .
- Insulator 113 may be silicon dioxide or any other type of well-known insulator or combination of insulators that are used on semiconductor devices.
- Resistor 221 is formed overlying insulator 113 .
- An insulator 116 may be formed on or overlying resistor 221 to insulate resistor 221 from some other electrical elements.
- Insulator 113 electrically isolates resistor 221 and the material thereof from a direct electrical connection to substrate 102 , however, resistor 221 may be capacitively coupled to substrate 102 .
- the thickness of insulator 113 is formed to provide such a capacitive coupling.
- An embodiment of insulator 113 may have a thickness that is less than approximately 0.6 microns, or alternately between approximately 0.1 and approximately 0.6 microns, or alternately approximately 0.3 microns.
- the material of resistor 221 may be patterned such that portions of resistor 221 are spaced laterally apart from each other forming a distance or space 229 between the portions.
- the material of resistor 221 may be formed on insulator 113 and patterned including resistor portions 222 and 223 that are formed on insulator 113 and are adjacent to each other.
- Portions 222 may have an embodiment that may be an alternate embodiment of resistor element 215 and portions 223 may have an embodiment may be an alternate embodiment of resistor element 216 .
- An optional contact 224 may be formed to electrically contact either portion 222 or 223 to form optional signal output 210 that is illustrated in FIG. 1 .
- Region 104 may have an embodiment that may be formed as a polygon.
- An embodiment may include that the polygon has an opening in the center.
- Such a shape may be referred to as a “multiply-connected topology” or “multiply-connected” shape meaning a class of connected shape(s) or domain(s) that have an opening or hole through the shape, such as for example a doughnut having a doughnut hole through the middle of the doughnut.
- the periphery of the multiply-connected shape can be circular or parallelogram or any other shape including an irregular shape.
- a graphic illustration of an example of a multiply-connected shape is illustrated in FIG. 3 .
- An embodiment of the polygon may be referred to as a race-track shape.
- Another polygon shape is illustrated in FIG. 8 .
- region 231 may extend to underlie all of the opening in the center between all of edges 228 .
- region 104 may extend to underlie all of the opening in the center between what is illustrated as edges 228 , and in such an embodiment edges 228 would not exist.
- An embodiment of resistor 221 may be formed into a pattern that forms a substantially geometric spiral.
- the geometric spiral may have an embodiment of a polygon shaped spiral or polygonal spiral or polygon spiral in an embodiment.
- the material of resistor 221 and portions 222 and 223 extend in an elongated pattern ( FIG. 3 ) from a starting point 119 in a plurality of revolutions around a center 238 of the pattern to form the polygon spiral pattern.
- the polygon spiral pattern may be a rectangular spiral as is illustrated in FIG. 3 .
- the polygon spiral may be another type of polygon spiral such as a square spiral or hexagon spiral or pentagon spiral, etc.
- the material of resistor 221 has starting point 119 at an inner portion of the pattern and an ending point 120 that is distal from starting point 119 .
- starting point 119 may begin overlying a portion of region 104 near region 106 or conductor 107 .
- starting point 119 may not be the center of the polygon spiral pattern.
- starting point 119 may be electrically connected to region 104 such as through a direct connection to either conductor 107 or to region 106 .
- Ending point 120 may have an embodiment that is not directly electrically connected to device 207 .
- ending point 120 may be in other positions along the elongated pattern as illustrated by point 120 in two different places of FIG. 3 .
- portion 223 and/or the output at terminal 218 may be omitted.
- Portions 222 and 223 (or alternately the material thereof) have a width 230 ( FIG. 2 ) and are spaced apart from each other by space 229 .
- An embodiment of space 229 is measured between opposing facing edges of two adjacent revolutions of resistor 221 . For example, along a particular line that is substantially perpendicular to the two adjacent revolutions.
- the elongated pattern means that the material of resistor 221 is formed as a substantially continuous material having a length that is greater than the width, such as for example a substantially continuous line. Even though the material is formed into the polygon spiral, the material still has an elongated shape and that elongated shape is coiled into the polygon spiral. Adjacent revolutions are separated from each other by space 229 .
- the material of either of or alternately both of portions 222 and 223 may not be continuous.
- the material of portions 222 may have one material that extends a portion of the distance along portion 222 (for example polysilicon of a certain resistivity) and may have a different material that extends for another distance along portion 222 (for example polysilicon of a different resistivity or a conductor or other material).
- resistor 221 may be formed by patterning a material or plurality of materials on insulator 113 . Each revolution of the material of resistor 221 has sides 235 ( FIG. 3 ) that are formed as substantially straight lines and also has resistive vertices or resistive corners or corners 233 that are formed as a curved shape.
- each corner 233 is formed as an arc of a circle as illustrated in a general manner by an arrow 240 .
- the arc may have an embodiment that would have a radius 241 of a circle from which the arc was formed. Corners 233 may have other curved shapes in other embodiments. In an embodiment, corners 233 may form an arc of up to approximately ninety (90) degrees.
- the arc formed by corners 233 assists in forming the most stable breakdown voltage if the arc is no less than approximately forty-five (45) degrees and no greater than approximately ninety (90) degrees.
- the arcs of all of corners 233 in one revolution sum to approximately three-hundred sixty (360) degrees.
- the arcs of each revolution sum to approximately three-hundred sixty (360) degrees. If there is less than one complete revolution, the sum may be less than three-hundred sixty (360) degrees.
- the material used to form corners 233 is different from the material used to form sides 235 .
- Sides 235 are formed from a conductor material that has a low resistance.
- Sides 235 may be formed from a metal or other conductor such as a low resistance doped polysilicon or salacided polysilicon or silicided polysilicon.
- the sheet resistance of the material used to form sides 235 generally is less than about thirty (30) ohms per square.
- the material used to form corners 233 usually has a higher resistance than the material of sides 235 .
- Corners 233 may have an embodiment that is formed from polysilicon or doped polysilicon or doped silicon.
- the material of sides 235 is different from the material of corners 233 because the resistivity is different.
- both sides 235 and corners 233 may be formed from some type of polysilicon, however, the resistivity of sides 235 is different from the resistivity of corners 233 .
- the resistivity of the material used for corners 233 is selected to provide the desired resistance for resistor 221 and for portions 222 and 223 .
- the material of corners 233 may have a resistivity of approximately three hundred (300) ohms per square or up to approximately five thousand (5000) ohms per square or alternatively between approximately one hundred (100) ohms per square to approximately five thousand (5000) ohms per square or alternately greater than three hundred (300) ohms per square
- the material of sides 235 may have a resistivity of approximately two (2) ohms per square or up to approximately twenty (20) ohms per square or alternatively between approximately two (2) ohms per square to approximately twenty (20) ohms per square or alternately no greater than approximately twenty (20) ohms per square.
- the resistivity of the material used for corners 233 generally is at least ten (10) times the resistivity of the material used for sides 235 and may be up to or greater than one hundred (100)
- region 104 may become substantially depleted of carriers and an electric field forms across region 104 with the highest potential being near region 106 and the lowest potential being near outer edge 225 .
- the applied potentials may also form an electric field associated with resistor 221 and that electric field may be coupled to portions of region 104 . It has been found that forming sides 235 from a conductor and forming corners 233 from a resistive material assists in reducing the electric field in region 104 which improves the breakdown voltage of device 220 .
- the potential drop along corners 233 assists in forming a more linear electric field distribution in region 104 and assists in improving the breakdown voltage of device 220 .
- the electric field associated with corners 233 may decrease as a distance 243 (illustrated in general by an arrow) increases along radius 241 .
- An embodiment may include that the electric field decreases as distance 243 increases from the innermost revolution in a particular corner toward the outermost revolution in that same particular corner.
- the resistance formed by the material of each revolution within a particular corner 233 increases in a direction from the region that functions as the drain toward a region that functions as the source as long as the distance along an arc of the corner increases for each successive arc in the direction from such drain toward such source.
- the resistance of each corner 233 increases for each successive corner 233 .
- An embodiment may include that the resistance of the material of each revolution within a particular corner 233 increases over the resistance of the corner 233 nearer to the drain proportionally to distance 243 .
- the arc will not be a resistive arc, but may be a conductor arc formed from a conductor material.
- This configuration of resistances formed by corners 233 forms a potential drop across each corner 233 that more closely matches the potential drop across the underlying electric field in the underlying portion of region 104 . Forming these two potentials to more closely match improves the reverse breakdown characteristics of device 220 . For example, provides a higher reverse breakdown voltage for a given surface area of device 220 .
- the resistance formed by the material of each revolution within a particular corner 233 increases in a direction from the region that functions as the cathode toward a region that functions as the anode as long as the distance along an arc of the corner increases for each successive arc in the direction from such cathode toward such anode.
- sides 235 are illustrated as substantially straight, sides 235 can be other shapes including a wavy line shape (see dashed line 236 ) or a saw tooth shape (see dashed line 237 ) or other shape as long as the resistance of sides 235 is less than that of corners 233 .
- space 229 is substantially constant between each revolution.
- An embodiment may include that width 230 of the material is substantially constant along the length of the elongated pattern. In some embodiments the width 229 and/or width 230 may change with distance along the length of the elongated pattern.
- FIG. 4 illustrates an enlarged plan view of a portion of an example of an embodiment of a device 260 that includes a resistor 263 .
- Device 260 is substantially similar to device 220 ( FIGS. 2-3 ) except that device 260 has a smaller surface area than device 220 , and has resistor 263 instead of resistor 221 .
- Resistor 263 includes resistor portions 265 and 267 that are similar to respective resistor portions 222 and 223 of device 220 .
- the material of resistor 263 and portions 265 and 267 extend in an elongated pattern from starting point 119 in a plurality of revolutions around center 238 to form the polygon spiral pattern.
- the polygon spiral pattern may be substantially a square spiral. Using a conductor material for sides 235 and a higher resistance material for corners 233 allows reducing the size of device 220 ( FIG. 3 ) to the size of device 260 without substantially reducing the reverse breakdown voltage.
- FIG. 5 schematically illustrates an example of a portion of an embodiment of a high-voltage circuit 250 that includes a semiconductor device 252 .
- Device 252 includes resistor 214 and an active element, such as for example a transistor 254 .
- Transistor 254 is an alternate embodiment of transistor 213 ( FIG. 2 ).
- Transistor 254 is a JFET instead of the MOSFET transistor 213 .
- FIG. 6 illustrates an example of an enlarged cross-sectional portion of an embodiment of a semiconductor device 255 that may have an embodiment that may be an alternate embodiment of device 252 illustrated in FIG. 5 .
- Device 125 includes resistor 214 , or alternately resistor 221 , and transistor 254 .
- Region 104 near edge 228 forms the drain of transistor 254 and a portion of region 104 near edge 225 forms the source.
- a doped region 257 may be formed in region 104 to form a low resistance electrical connection to the source region of transistor 254 .
- a conductor 259 may be formed on region 257 to form a source electrode or conductor for transistor 254 .
- substrate 102 may form the gate electrode of transistor 254 .
- a gate electrode or conductor material may be formed through insulators 113 and 116 to electrically connect to region 104 .
- device 255 may include a doped region 256 formed on substrate and within region 104 to form a gate of transistor 254 .
- a conductor 258 may be formed on region 256 to form a gate electrode of transistor 255 .
- Resistor 214 still provides the same advantages as explained for device 220 .
- FIG. 7 illustrates an example of an enlarged cross-sectional portion of an embodiment of a semiconductor device 245 that includes a diode 246 and resistor 221 .
- Diode 246 includes a doped region 247 formed on the substrate 102 and within region 104 .
- Region 247 has a conductivity type that is the opposite of region 106 .
- An embodiment may include that region 247 has a conductivity type that is opposite to that of region 104 .
- region 247 may form an anode and region 106 may form a cathode of diode 246 .
- a conductor 248 may be formed to electrically contact region 247 to form an anode electrode of diode 246 .
- FIG. 8 graphically illustrates an enlarged plan view of an example of a portion of an embodiment of another high-voltage circuit 300 that may be an alternate embodiment of the circuit of FIGS. 3-4 and includes a semiconductor device.
- Device 300 is substantially similar to device 220 and 260 ( FIGS. 2-4 ) except that device 300 has a shape of an open polygon, for example a ‘U” shape.
- the material of resistor 221 extends in an elongated pattern from starting point 119 in a plurality of revolutions around device 300 to form the polygon spiral pattern.
- Device 300 also includes conductor corners 333 that are formed from a conductor material.
- the material of corners 333 is a conductor because the distance along the material of each successive corner 333 decreases in a distance 343 from the region that functions as the drain (or alternately cathode) toward the doped region that functions as the source (or alternately anode).
- an example of an embodiment of a semiconductor device having a high voltage resistor element may comprise:
- a semiconductor substrate such as for example substrate 102 , having a first conductivity type, for example P-type
- a first doped region for example region 104
- a second conductivity type for example N-type
- the first doped region forms a drift region of a transistor with comments such as for example region 213 or 254 ;
- a second doped region such as for example region 165 , of the second conductivity type in the semiconductor substrate and spaced apart from the first doped region wherein the second doped region forms another region, such as for example the source region, of the transistor, such as for example a transistor 213 ;
- an insulator such as for example insulator 113 , overlying the first doped region
- a resistor become such as for example resistor 214 overlying the insulator, the resistor formed in a rectangular spiral shape having a plurality of revolutions, each revolution having sides, such as for example sides 235 , and curved corners, such as for example corners 233 , that connect the sides, the curved corners formed from a first semiconductor material such as for example polysilicon, having a first resistivity and the sides formed from a second semiconductor material, such as for example a conductor such as doped polysilicon, having a second resistivity wherein the first resistivity is at least one hundred times the second resistivity.
- a first semiconductor material such as for example polysilicon
- a second semiconductor material such as for example a conductor such as doped polysilicon
- the second resistivity ( 235 /sides) may be between approximately two ohms per square and twenty ohms per square.
- An embodiment may include that the first resistivity may be between approximately three hundred ohms per square and five thousand ohms per square.
- the first doped region may be either a drift region of a JFET transistor or a drift region of an MOS transistor or a doped region of a diode.
- the curved corners are arcs of a circle.
- An embodiment may also include that the curved corners may be arcs of a circle and a sum total of the arcs is approximately three-hundred sixty degrees.
- any method of forming a resistor of a semiconductor device may comprise:
- a semiconductor substrate such as for example substrate 102 , having a first conductivity type, such as for example P-type;
- a first doped region of a second conductivity type such as for example N-type, on a first portion of the semiconductor substrate
- an insulator such as for example insulator 113 , overlying the first doped region
- a resistor such as for example resistor 214 or 221
- overlying the insulator and the first doped region including forming the resistor in a polygon spiral shape having a plurality of revolutions with each revolution having sides, such as for example sides 235 , and corners, such as for example and corners 233 , including forming the corners from a resistive material having a first resistivity and forming the sides from a second material having a lower resistivity.
- the method may have an embodiment that may include forming the polygon spiral shape as one of a rectangular spiral, a square spiral, or a hexagonal spiral.
- An embodiment of the method may include forming the sides of adjacent revolutions spaced a first distance, such as for example a distance 229 , from each other.
- In an embodiment may include forming the first distance to be substantially constant for each revolution.
- Another embodiment may include forming the sides from the second material that is substantially a conductor.
- the method may also have an embodiment that may include forming the first resistivity to be at least approximately three hundred ohms per square.
- An embodiment may include forming the lower resistivity to be no greater than approximately twenty ohms per square.
- Another embodiment may include including forming the resistive material from either polysilicon or doped polysilicon.
- the method may include including forming the second material from a conductor.
- An embodiment may include forming the second material from either a silicided polysilicon or a salacided polysilicon.
- a method of forming a resistor of a semiconductor device may comprise:
- a semiconductor substrate such as for example substrate 102 , having a first conductivity type, such as for example a P-type;
- a first doped region of a second conductivity type such as for example N-type, on a first portion of the semiconductor substrate
- an insulator such as for example insulator 113 , overlying the first doped region
- a material such as the material of resistor 221 , overlying the insulator and the first doped region including forming the material as an elongated element that is formed in a pattern of a spiral having a plurality of revolutions wherein each revolution has sides, such as for example sides 235 , and a corner, such as for example corner 233 , that interconnects two of the sides, including forming the corner from a first material having a first resistivity and forming the sides from a second material having a lower resistivity.
- An embodiment may include forming the second material from polysilicon having a resistivity that is less than twenty ohms per square.
- An embodiment may also include forming the first material from polysilicon having a resistivity that is greater than one hundred ohms per square.
- a novel device and method is disclosed. Included, among other features, is forming a resistor in a pattern and with two different materials that forms an electric field that is substantially similar to an electric field in an underlying semiconductor region of the device.
- the resistor may be formed in a polygon spiral pattern that has sides formed from a conductor material and corners formed from a higher resistance material. The higher resistance material in the corners forms an electric field that more closely matches the electric field in the underlying semiconductor device.
- Using the two different materials also facilitates changing the size of the device without substantially affecting the reverse breakdown of the device.
- the embodiment of a transistor having a resistor with resistive corners is merely a vehicle to describe any semiconductor device having a resistor that has sides that are formed from a material that is substantially a conductor and at least one corner that is formed from a material that has a greater resistivity.
- inventive aspects may lie in less than all features of a single foregoing disclosed embodiment.
- inventive aspects may lie in less than all features of a single foregoing disclosed embodiment.
- the hereinafter expressed claims are hereby expressly incorporated into this Detailed Description of the Drawings, with each claim standing on its own as a separate embodiment of an invention.
- some embodiments described herein include some but not other features included in other embodiments, combinations of features of different embodiments are meant to be within the scope of the invention, and form different embodiments, as would be understood by those skilled in the art.
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Abstract
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US16/447,005 US11152454B2 (en) | 2019-02-19 | 2019-06-20 | Method of forming a semiconductor device having a resistor and structure therefor |
DE102019008580.9A DE102019008580A1 (en) | 2019-02-19 | 2019-12-11 | METHOD OF FORMING A SEMICONDUCTOR DEVICE AND STRUCTURE THEREFORE |
CN202010097253.0A CN111584483A (en) | 2019-02-19 | 2020-02-17 | Method of forming a semiconductor device and structure therefor |
US17/479,066 US11984471B2 (en) | 2019-02-19 | 2021-09-20 | Semiconductor device having a resistor and structure therefor |
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US201962807293P | 2019-02-19 | 2019-02-19 | |
US16/447,005 US11152454B2 (en) | 2019-02-19 | 2019-06-20 | Method of forming a semiconductor device having a resistor and structure therefor |
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US20220005922A1 (en) * | 2019-02-19 | 2022-01-06 | Semiconductor Components Industries, Llc | Method of forming a semiconductor device and structure therefor |
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CN113161351B (en) * | 2021-03-23 | 2022-03-11 | 江苏新顺微电子股份有限公司 | Device structure of bipolar transistor integrated high-voltage starting resistor and manufacturing method |
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CN111584483A (en) | 2020-08-25 |
US20200266263A1 (en) | 2020-08-20 |
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