US10811249B2 - Atomic layer deposition of GeO2 - Google Patents
Atomic layer deposition of GeO2 Download PDFInfo
- Publication number
- US10811249B2 US10811249B2 US16/773,026 US202016773026A US10811249B2 US 10811249 B2 US10811249 B2 US 10811249B2 US 202016773026 A US202016773026 A US 202016773026A US 10811249 B2 US10811249 B2 US 10811249B2
- Authority
- US
- United States
- Prior art keywords
- precursor
- substrate
- germanium
- oxygen
- geo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical group O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 title claims abstract description 248
- 238000000231 atomic layer deposition Methods 0.000 title claims abstract description 90
- 239000002243 precursor Substances 0.000 claims abstract description 107
- 239000000758 substrate Substances 0.000 claims abstract description 93
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 78
- 239000001301 oxygen Substances 0.000 claims abstract description 75
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 70
- 238000000034 method Methods 0.000 claims abstract description 66
- 230000008569 process Effects 0.000 claims abstract description 60
- 238000006243 chemical reaction Methods 0.000 claims abstract description 40
- 239000010409 thin film Substances 0.000 claims abstract description 32
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000006227 byproduct Substances 0.000 claims abstract description 15
- 239000012808 vapor phase Substances 0.000 claims abstract description 14
- 239000002356 single layer Substances 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 62
- 238000000151 deposition Methods 0.000 claims description 48
- 230000008021 deposition Effects 0.000 claims description 33
- 229910052732 germanium Inorganic materials 0.000 claims description 29
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 25
- 125000000217 alkyl group Chemical group 0.000 claims description 22
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 21
- 150000003973 alkyl amines Chemical class 0.000 claims description 16
- 239000003446 ligand Substances 0.000 claims description 16
- 150000004703 alkoxides Chemical class 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 238000005137 deposition process Methods 0.000 claims description 8
- 150000001412 amines Chemical class 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 6
- 238000009833 condensation Methods 0.000 claims description 5
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims 1
- 239000010408 film Substances 0.000 description 61
- 239000000376 reactant Substances 0.000 description 29
- NHLNJPXVJOFRNH-UHFFFAOYSA-N ethanol germanium(4+) Chemical compound [Ge+4].CCO.CCO.CCO.CCO NHLNJPXVJOFRNH-UHFFFAOYSA-N 0.000 description 22
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 16
- 229910052593 corundum Inorganic materials 0.000 description 16
- 125000000547 substituted alkyl group Chemical group 0.000 description 16
- 229910001845 yogo sapphire Inorganic materials 0.000 description 16
- 239000011229 interlayer Substances 0.000 description 14
- 150000004820 halides Chemical class 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000001257 hydrogen Substances 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 8
- 125000005103 alkyl silyl group Chemical group 0.000 description 7
- 238000010926 purge Methods 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- JKUUTODNPMRHHZ-UHFFFAOYSA-N n-methyl-n-[tris(dimethylamino)germyl]methanamine Chemical compound CN(C)[Ge](N(C)C)(N(C)C)N(C)C JKUUTODNPMRHHZ-UHFFFAOYSA-N 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 229910006990 Si1-xGex Inorganic materials 0.000 description 3
- 229910007020 Si1−xGex Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 125000003342 alkenyl group Chemical group 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000013110 organic ligand Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 238000006557 surface reaction Methods 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 150000002902 organometallic compounds Chemical group 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 241000894007 species Species 0.000 description 2
- GXMNGLIMQIPFEB-UHFFFAOYSA-N tetraethoxygermane Chemical compound CCO[Ge](OCC)(OCC)OCC GXMNGLIMQIPFEB-UHFFFAOYSA-N 0.000 description 2
- 229910003865 HfCl4 Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 125000000304 alkynyl group Chemical group 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910052876 emerald Inorganic materials 0.000 description 1
- 239000010976 emerald Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- NWINXQYZVMLCMI-UHFFFAOYSA-N n-ethyl-n-[tris(diethylamino)germyl]ethanamine Chemical compound CCN(CC)[Ge](N(CC)CC)(N(CC)CC)N(CC)CC NWINXQYZVMLCMI-UHFFFAOYSA-N 0.000 description 1
- ZWRHKBMGGAGXHE-UHFFFAOYSA-N n-methyl-n-tris[ethyl(methyl)amino]germylethanamine Chemical compound CCN(C)[Ge](N(C)CC)(N(C)CC)N(C)CC ZWRHKBMGGAGXHE-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02301—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment in-situ cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Definitions
- the application relates to atomic layer deposition processes for forming GeO 2 films.
- Ge devices are of interest because of Ge high hole mobility. Low D a interface formation with HfO 2 HK material will allow for good Ge based FinFETs.
- atomic layer deposition processes for forming germanium oxide thin films on a substrate in a reaction chamber are disclosed.
- the ALD processes can include contacting the substrate with a vapor phase tetravalent Ge precursor, removing excess Ge precursor and any reaction by-products, contacting the substrate with a vapor phase oxygen precursor, removing excess oxygen precursor and any gaseous by-products, and repeating the contacting and removing steps until a germanium oxide thin film of the desired thickness has been formed.
- contacting the substrate with a vapor phase tetravalent Ge precursor results in the formation of at most a molecular monolayer of the Ge precursor on the substrate surface.
- the oxygen precursor reacts with the Ge precursor on the substrate surface.
- the oxygen precursor is something other than water.
- the oxygen precursor is one of ozone, oxygen atoms, oxygen radicals, or oxygen plasma.
- the Ge-precursor is not a halide.
- the Ge-precursor comprises at least one alkoxide ligand.
- the Ge-precursor comprises at least one amine or alkylamine ligand.
- the Ge-precursor comprises at least one amine or alkylamine ligand, and the oxygen precursor comprises water.
- the surface of the substrate comprises a thin layer of GeO 2 prior to beginning the ALD process.
- the substrate is pretreated with a passivation chemical to prevent oxidation before the germanium oxide film is deposited.
- an interfacial layer is formed on the substrate before the germanium oxide thin film is deposited.
- the deposition temperature is from about 100° C. to about 400° C.
- the substrate is treated to remove native Ge oxide prior to forming the germanium oxide thin film.
- Some embodiments for forming a germanium oxide thin film by an ALD process include depositing a thin layer of a different material over the germanium oxide thin film.
- the thin layer of a different material is deposited directly on the germanium oxide thin film.
- the thin layer comprises Al 2 O 3 , and in some embodiments, the Al 2 O 3 layer is deposited by a process that does not use water as a reactant.
- the germanium oxide thin film serves as an interlayer between the substrate and a high-k layer. And in some embodiments, the germanium oxide thin film may be used in a Ge-condensation process.
- an atomic layer deposition process for forming a pure GeO 2 thin film, in which the process can include alternately and sequentially contacting a substrate with Ge(OCH 2 CH 3 ) 4 and O 3 .
- an atomic layer deposition process for forming a pure GeO 2 thin film, which can include alternately and sequentially contacting a substrate with an alkylamine Ge precursor and an oxygen source.
- the Ge precursor is TDMAGe
- the oxygen source is ozone.
- the Ge precursor is TDMAGe
- the oxygen source is water.
- the oxygen source is water.
- FIG. 1 illustrates the growth rate of GeO 2 films as a function of deposition temperature using vapour pulses of Ge(OEt) 4 and O 3 at 150° C.-300° C.;
- FIG. 2 illustrates two computerized images of the respective thicknesses of two wafers prepared according to some embodiments.
- FIG. 3 illustrates GeO 2 film thickness non-uniformity as a function of deposition temperature using vapour pulses of Ge(OEt) 4 and O 3 at 150° C.-300° C.;
- FIG. 4 illustrates GeO 2 film thickness as a function of the number of deposition cycles when using vapour pulses of Ge(OEt) 4 and O 3 at 250° C.;
- FIG. 5 shows the composition of GeO 2 deposited by ALD at various temperatures.
- FIG. 6A shows GeO 2 films deposited by ALD over Ge at a first magnification. HfO 2 was subsequently deposited over the GeO 2 ;
- FIG. 6B shows GeO 2 films deposited by ALD over Ge at a second magnification. HfO 2 was subsequently deposited over the GeO 2 ;
- FIG. 7A illustrates GeO 2 film thickness as a function of the number of deposition cycles when using vapour pulses of Ge(OEt) 4 and O 3 at 300° C. on HF-last Si;
- FIG. 7B illustrates GeO 2 film thickness as a function of the number of deposition cycles when using vapour pulses of Ge(OEt) 4 and O 3 at 300° C. on HF-last Ge;
- FIG. 8A shows a transmission electron microscope (TEM) image of two layers deposited by ALD (GeO 2 and Al 2 O 3 ) where the Al 2 O 3 was deposited using a TMA+O 3 -process.
- TEM transmission electron microscope
- FIG. 8B shows a TEM image of three intermixed layers (Al, Ge, and O) when Al 2 O 3 was deposited using a TMA+H 2 O process.
- FIG. 9A shows an image from a scanning electron microscope (SEM) at a first magnification illustrating GeO 2 film conformality when deposited using vapour pulses of Ge(OEt) 4 and O 3 .
- FIG. 9B shows an image from a SEM at a second magnification illustrating GeO 2 film conformality when deposited using vapour pulses of Ge(OEt) 4 and O 3 .
- FIG. 10 illustrates ALD GeO 2 /ALD HfO 2 stack film conformality when grown at reaction temperature of 250° C.
- the target thickness of the GeO 2 was about 30 nm.
- FIG. 11 illustrates the C-V characteristics of ALD GeO 2 interlayers grown on p-doped Ge and n-doped Ge.
- the GeO 2 interlayers were grown at a reaction temperature 250° C. from vapour pulses of Ge(OEt) 4 and O 3 .
- FIG. 12 illustrates the C-V characteristics of GeO 2 interlayer grown by ALD at different temperatures using vapour pulses of Ge(OEt) 4 and O 3 .
- FIG. 13A illustrates the C-V characteristics of GeO 2 interlayers, grown by ALD at a reaction temperature of 250° C. using vapour pulses of Ge(OEt) 4 and O 3 with an ALD Al 2 O 3 capping layer.
- FIG. 13B illustrates the C-V characteristics of GeO 2 interlayers, grown by ALD at a reaction temperature of 250° C. using vapour pulses of Ge(OEt) 4 and O 3 without an ALD Al 2 O 3 capping layer.
- FIG. 14A illustrates the C-V characteristics of GeO 2 interlayers grown by ALD on Ge-substrates with HF-cleaning, at a reaction temperature 250° C. using vapour pulses of Ge(OEt) 4 and O 3 .
- FIG. 14B illustrates the C-V characteristics of GeO 2 interlayers grown by ALD on Ge-substrates without HF-cleaning, at a reaction temperature 250° C. using vapour pulses of Ge(OEt) 4 and O 3 .
- a GeO 2 thin film is formed on a substrate by a vapor deposition process comprising alternately and sequentially contacting a substrate with a vapor phase germanium precursor and an oxygen reactant, such that a layer of the germanium precursor forms on the substrate surface, and the oxygen-containing reactant subsequently reacts with the germanium precursor to form a GeO 2 thin film.
- the Ge precursor may be selected from Germanium ethoxide (GeOEt) 4 and tetrakis(dimethylamino) germanium (TDMAGe). Other possible germanium precursors are provided below.
- the Ge precursor is not a halide.
- the Ge precursor contains halide in at least one ligand, but not in all ligands.
- the oxygen reactant comprises one or more of ozone, oxygen atoms, oxygen radicals, and oxygen plasma.
- the oxygen reactant may be water. However, in other embodiments the oxygen reactant is not water.
- GeO 2 thin films are deposited by alternately and sequentially contacting a substrate with Ge(OCH 2 CH 3 ) 4 and O 3 . In some embodiments GeO 2 thin films are deposited by alternately and sequentially contacting a substrate with tetrakis(dimethylamio) germanium (TDMAGe) and O 3 .
- TDMAGe tetrakis(dimethylamio) germanium
- GeO 2 films may be used, for example as an interface layer between high-k and new channel materials in semiconductor devices.
- the GeO 2 layer may serve as an interface in a Ge-based FinFET.
- the GeO 2 layer is an interface layer between Ge and a high-k material.
- the GeO 2 interface layer may prevent leakage and decrease trap density.
- Other contexts in which GeO 2 thin films may be utilized will be apparent to the skilled artisan.
- GeO 2 thin films may find use in optical applications.
- the GeO 2 films deposited by ALD processes are annealed after the deposition as desired depending on the application.
- the GeO 2 films deposited by ALD can be used for a process called Ge-condensation.
- a principle of this can be seen and understood, for example, from U.S. Patent Publications 2011/0147811 (see FIGS. 3 a and 3 b ) and 2011/0193178 (see para. [0020, which are incorporated by reference herein]).
- U.S. Patent Publications 2011/0147811 see FIGS. 3 a and 3 b
- 2011/0193178 see para. [0020, which are incorporated by reference herein].
- the ALD-deposited GeO 2 film with another film (i.e., a “capping layer”), preferably one deposited by ALD or PEALD, such as ALD-deposited or PEALD-deposited Al 2 O 3 , SiN x , or SiO 2 before an anneal step where Ge will be driven to the fin or channel.
- a “capping layer” preferably one deposited by ALD or PEALD, such as ALD-deposited or PEALD-deposited Al 2 O 3 , SiN x , or SiO 2 before an anneal step where Ge will be driven to the fin or channel.
- a capping layer preferably one deposited by ALD or PEALD, such as ALD-deposited or PEALD-deposited Al 2 O 3 , SiN x , or SiO 2 before an anneal step where Ge will be driven to the fin or channel.
- water may be used as an oxygen source in the ALD GeO 2 process.
- the GeO 2 is deposited by an ALD process on a silicon fin
- the GeO 2 is deposited by an ALD process on a silicon fin and a capping layer is deposited over the GeO 2 layer.
- the GeO 2 is deposited by an ALD process on a Si 1-x Ge x fin, and a capping layer is then deposited over the GeO 2 layer.
- the capping layer is SiO 2 .
- the capping layer is SiN x .
- the capping layer is Al 2 O 3 .
- the capping layer is deposited by methods other than an ALD or PEALD process.
- the capping layer is deposited by an ALD process.
- the capping layer is deposited by a PEALD process.
- the GeO 2 films deposited by ALD are pure GeO 2 films.
- deposited GeO 2 may be able to produce a better interface layer than GeO 2 formed by thermal oxidation.
- Atomic layer deposition allows for conformal deposition of GeO 2 films.
- the GeO 2 films deposited by ALD have at least 90%, 95% or higher conformality. In some embodiments the films are about 100% conformal.
- the substrate may be, for example, a semiconductor substrate.
- the surface of the substrate comprises a group III or group IV compound.
- the surface of the substrate comprises Ge.
- the surface of the substrate comprises a thin GeO 2 layer.
- the GeO 2 layer may be formed, for example, through thermal or plasma oxidation.
- the substrate surface is H-terminated.
- native Ge oxide is removed, for example with HF, prior to GeO 2 deposition by ALD.
- the substrate may be treated prior to depositing the GeO 2 layer by ALD.
- the substrate may be treated with a passivation chemical to prevent oxidation prior to depositing GeO 2 by ALD.
- the substrate is treated to form an interfacial layer prior to depositing GeO 2 by ALD.
- the substrate treatment may comprise exposing the substrate to trimethylaluminum (TMA) to form an interfacial layer or surface termination on the surface prior to GeO 2 deposition.
- TMA trimethylaluminum
- the substrate may be treated to remove native Ge oxide, for example with HF, prior to depositing GeO 2 by ALD.
- a further film is deposited.
- the additional film may be directly over and contacting the ALD-deposited GeO 2 layer.
- a high-k film is deposited after the ALD-deposited GeO 2 is deposited.
- the high-k layer or other film may be deposited by ALD or by other known deposition methods.
- a HfO 2 layer is deposited over the GeO 2 layer.
- an Al 2 O 3 layer is deposited over the GeO 2 layer.
- a deposition process for depositing a film on top of a GeO 2 film does not utilize water as one of the reactants.
- a deposition process for depositing a film on top of a GeO 2 film utilizes an oxygen source other than water.
- a deposition process for a film deposited on top of a GeO 2 film uses ozone as an oxygen source.
- a deposition process for a film deposited on top of a GeO 2 film uses oxygen atoms, oxygen radicals or oxygen containing plasma as an oxygen source.
- a deposition process for a film deposited on top of a GeO 2 film uses water, and at least one mixed layer comprising germanium is produced.
- atoms or radicals may oxidize the substrate during the first one or more ALD cycles for forming GeO 2 and form a thin layer of GeO 2 on the substrate itself. In that situation, the GeO 2 layer would be a kind of composite of GeO 2 (oxidized from substrate) and ALD-deposited GeO 2 .
- a GeO 2 layer is an interlayer between a substrate and high-k layer.
- a GeO 2 interlayer has a thickness of less than about 10 nm, more preferably less than about 5 nm and most preferably less than about 3 nm. In some cases the GeO 2 interlayer is less than about 2 nm or even less than about 1 nm thick.
- ALD Atomic Layer Deposition
- ALD atomic layer deposition
- ALD type processes are based on controlled, self-limiting surface reactions of precursor chemicals. Gas phase reactions are avoided by feeding the precursors alternately and sequentially into the reaction chamber. Vapor phase reactants are separated from each other in the reaction chamber, for example, by removing excess reactants and/or reactant by-products from the reaction chamber between reactant pulses.
- a substrate is loaded into a reaction chamber and is heated to a suitable deposition temperature, generally at lowered pressure.
- Deposition temperatures are maintained below the precursor thermal decomposition temperature but at a high enough level to avoid condensation of reactants and to provide the activation energy for the desired surface reactions.
- the appropriate temperature window for any given ALD reaction will depend upon the surface termination and reactant species involved.
- the deposition temperature is from about 20° C. to about 600° C., preferably from about to 100° C. to about 400° C., and more preferably from about 150° C. to about 300° C.
- a first germanium reactant is conducted into the chamber in the form of vapor phase pulse and contacted with the surface of a substrate.
- the substrate surface comprises a three dimensional structure.
- Conditions are preferably selected such that no more than about one monolayer of the germanium precursor is adsorbed on the substrate surface in a self-limiting manner.
- first reactant and reaction byproducts if any, may be removed from the substrate and substrate surface and from proximity to the substrate and substrate surface.
- reactant and reaction byproducts, if any may be removed by purging. Purging may be accomplished for example, with a pulse of inert gas such as nitrogen or argon.
- Purging the reaction chamber means that vapor phase precursors and/or vapor phase byproducts are removed from the reaction chamber such as by evacuating the chamber with a vacuum pump and/or by replacing the gas inside the reactor with an inert gas such as argon or nitrogen.
- Typical purging times are from about 0.05 seconds to about 20 seconds, more preferably between about 1 second and about 10 seconds, and still more preferably between about 1 second and about 2 seconds.
- other purge times can be utilized if necessary, such as when depositing layers over extremely high aspect ratio structures or other structures with complex surface morphology.
- the appropriate pulsing times can be readily determined by the skilled artisan based on the particular circumstances.
- Another method for removing excess reactants—metal precursors or oxygen precursors, reaction byproducts, etc.—from the substrate surface or from the area of the substrate may involve physically moving the substrate from a location containing the reactant and/or reaction byproducts.
- a second gaseous oxygen reactant is pulsed into the chamber where it reacts with the first germanium reactant on the surface to form germanium oxide.
- Excess second reactant and gaseous by-products of the surface reaction are removed from the substrate, for example by purging them out of the reaction chamber, preferably with the aid of an inert gas.
- the steps of pulsing and removing are repeated until a thin film of the desired thickness has been formed on the substrate, with each cycle typically leaving no more than about a molecular monolayer.
- each pulse or phase of each cycle is preferably self-limiting.
- An excess of reactant precursors is supplied in each phase to saturate the susceptible structure surfaces.
- Surface saturation ensures reactant occupation of all available reactive sites (subject, for example, to physical size or “steric hindrance” restraints) and thus ensures excellent step coverage.
- the degree of self-limiting behavior can be adjusted by, e.g., allowing some overlap of reactant pulses to trade off deposition speed (by allowing some CVD-type reactions) against conformality.
- Ideal ALD conditions with reactants well separated in time and space provide near perfect self-limiting behavior and thus maximum conformality, but steric hindrance results in less than one molecular layer per cycle.
- Limited CVD reactions mixed with the self-limiting ALD reactions can raise the deposition speed.
- a reaction space can be in a single-wafer ALD reactor or a batch ALD reactor where deposition on multiple substrates takes place at the same time.
- the substrate on which deposition is desired such as a semiconductor workpiece, is loaded into a reactor.
- the reactor may be part of a cluster tool in which a variety of different processes in the formation of an integrated circuit are carried out.
- a flow-type reactor is utilized.
- a high-volume manufacturing-capable single wafer ALD reactor is used.
- a batch reactor comprising multiple substrates is used.
- the number of substrates is preferably in the range of 10 to 200, more preferably in the range of 50 to 150, and most preferably in the range of 100 to 130.
- suitable reactors include commercially available ALD equipment such as the F-120® reactor, F-450 reactor, Pulsar® reactors—such as the Pulsar® 2000 and the Pulsar® 3000—EmerALD® reactor and Advance® 400 Series reactors, available from ASM America, Inc of Phoenix, Ariz. and ASM Europe B.V., Almere, Netherlands.
- Other commercially available reactors include those from ASM Japan K.K (Tokyo, Japan) under the tradename Eagle® XP and XP8.
- ALD reactors many other kinds of reactors capable of ALD growth of thin films, including CVD reactors equipped with appropriate equipment and means for pulsing the precursors can be employed.
- a flow type ALD reactor is used.
- reactants are kept separate until reaching the reaction chamber, such that shared lines for the precursors are minimized.
- other arrangements are possible.
- Suitable batch reactors include, but are not limited to, reactors designed specifically to enhance ALD processes, which are commercially available from and ASM Europe B.V (Almere, Netherlands) under the trade names ALDA400TM and A412TM.
- a vertical batch reactor is utilized in which the boat rotates during processing, such as the A412TM.
- wafers rotate during processing.
- wafer-to-wafer uniformity is less than 3% (1 sigma), less than 2%, less than 1% or even less than 0.5%.
- the germanium oxide ALD processes described herein can optionally be carried out in a reactor or reaction space connected to a cluster tool.
- a cluster tool because each reaction space is dedicated to one type of process, the temperature of the reaction space in each module can be kept constant, which improves the throughput compared to a reactor in which the substrate is heated up to the process temperature before each run.
- a germanium oxide thin film is formed by an ALD-type process comprising multiple pulsing cycles, each cycle comprising:
- germanium oxide preferably GeO 2
- germanium oxide is deposited from alternating and sequential pulses of a Ge precursor and an oxygen source, like water, ozone, oxygen plasma, oxygen radicals, or oxygen atoms.
- an oxygen source like water, ozone, oxygen plasma, oxygen radicals, or oxygen atoms.
- the oxygen source is not water.
- the Ge precursor preferably comprises Ge(OEt) 4 or TDMAGe.
- the Ge precursor employed in the ALD type processes may be solid, liquid, or gaseous material under standard conditions (room temperature and atmospheric pressure), provided that the Ge precursor is in vapor phase before it is conducted into the reaction chamber and contacted with the substrate surface.
- “Pulsing” a vaporized precursor onto the substrate means that the precursor vapor is conducted into the chamber for a limited period of time. Typically, the pulsing time is from about 0.05 seconds to about 10 seconds. However, depending on the substrate type and its surface area, the pulsing time may be even higher than about 10 seconds.
- the Ge precursor is pulsed for from about 0.05 seconds to about 10 seconds, more preferably for from about 0.1 seconds to about 5 seconds and most preferably for from about 0.3 seconds to about 3.0 seconds.
- the oxygen-containing precursor is preferably pulsed for from about 0.05 seconds to about 10 seconds, more preferably for from about 0.1 seconds to about 5 seconds, most preferably for from about 0.2 seconds to about 3.0 seconds.
- pulsing times can be on the order of minutes in some cases. The optimum pulsing time can be readily determined by the skilled artisan based on the particular circumstances.
- the Ge precursor is Ge(OEt) 4 or TDMAGe.
- Other possible germanium precursors that can be used in some embodiments are described below.
- the Ge precursor is Ge(OMe) 4 .
- the Ge-precursor is not a halide.
- the Ge-precursor may comprise a halogen in at least one ligand, but not in all ligands.
- the oxygen source may be an oxygen-containing gas pulse and can be a mixture of oxygen and inactive gas, such as nitrogen or argon.
- the oxygen source may be a molecular oxygen-containing gas pulse.
- the preferred oxygen content of the oxygen-source gas is from about 10% to about 25%.
- one source of oxygen may be air.
- the oxygen source is molecular oxygen.
- the oxygen source comprises an activated or excited oxygen species.
- the oxygen source comprises ozone.
- the oxygen source may be pure ozone or a mixture of ozone, molecular oxygen, and another gas, for example an inactive gas such as nitrogen or argon.
- Ozone can be produced by an ozone generator and it is most preferably introduced into the reaction space with the aid of an inert gas of some kind, such as nitrogen, or with the aid of oxygen.
- ozone is provided at a concentration from about 5 vol-% to about 40 vol-%, and preferably from about 15 vol-% to about 25 vol-%.
- the oxygen source is oxygen plasma.
- ozone or a mixture of ozone and another gas is pulsed into the reaction chamber.
- ozone is formed inside the reactor, for example by conducting oxygen containing gas through an arc.
- an oxygen containing plasma is formed in the reactor.
- the plasma may be formed in situ on top of the substrate or in close proximity to the substrate.
- the plasma is formed upstream of the reaction chamber in a remote plasma generator and plasma products are directed to the reaction chamber to contact the substrate.
- the pathway to the substrate can be optimized to maximize electrically neutral species and minimize ion survival before reaching the substrate.
- the oxygen source is an oxygen source other than water.
- water is not provided in any ALD cycle for depositing GeO 2 .
- the Ge precursor comprises at least one amine or alkylamine ligand, such as those presented in formulas (2) through (6) and (8) and (9), and the oxygen precursor comprises water.
- the substrate Before starting the deposition of the film, the substrate is typically heated to a suitable growth temperature, as discussed above.
- the preferred deposition temperature may vary depending on a number of factors such as, and without limitation, the reactant precursors, the pressure, flow rate, the arrangement of the reactor, and the composition of the substrate including the nature of the material to be deposited on.
- the processing time depends on the thickness of the layer to be produced and the growth rate of the film.
- the growth rate of a thin film is determined as thickness increase per one cycle.
- One cycle consists of the pulsing and removing steps of the precursors and the duration of one cycle is typically between about 0.2 seconds and about 30 seconds, more preferably between about 1 second and about 10 seconds, but it can be on order of minutes or more in some cases, for example, where large surface areas and volumes are present.
- the GeO 2 film formed is a pure GeO 2 film. Preferably, aside from minor impurities no other metal or semi-metal elements are present in the film. In some embodiments the film comprises less than 1-at % of metal or semi-metal other than Ge. In some embodiments the GeO 2 film is stoichiometric. In some embodiments, a pure GeO 2 film comprises less than about 5-at % of any impurity other than hydrogen, preferably less than about 3-at % of any impurity other than hydrogen, and more preferably less than about 1-at % of any impurity other than hydrogen.
- the GeO 2 film formed has step coverage of more than about 80%, more preferably more than about 90%, and most preferably more than about 95% in structures which have high aspect ratios.
- high aspect ratio structures have an aspect ratio that is more than about 3:1 when comparing the depth or height to the width of the feature.
- the structures have an aspect ratio of more than about 5:1, or even an aspect ratio of 10:1 or greater.
- the Ge precursor is tetravalent (i.e. Ge has an oxidation state of +IV). In some embodiments, the Ge precursor is not divalent (i.e., Ge has an oxidation state of +II). In some embodiments, the Ge precursor may comprise at least one alkoxide ligand. In some embodiments, the Ge precursor may comprise at least one amine or alkylamine ligand. In some embodiments the Ge precursor is a metal-organic or organometallic compound. In some embodiments the Ge precursor comprises at least one halide ligand. In some embodiments the Ge precursor does not comprise a halide ligand.
- the Ge precursor is not solid at room temperature (e.g., about 20° C.).
- Ge precursors from formulas (1) through (9) below may be used in some embodiments.
- R is can be independently selected from the group consisting of alkyl and substituted alkyl; GeR x A 4-x (2)
- x is an integer from 1 to 4.
- R is an organic ligand and can be independently selected from the group consisting of alkoxides, alkylsilyls, alkyl, substituted alkyl, alkylamines;
- A can be independently selected from the group consisting of alkyl, substituted alkyl, alkoxides, alkylsilyls, alkyl, alkylamines, halide, and hydrogen.
- x is an integer from 1 to 4.
- R can be independently selected from the group consisting of alkyl and substituted alkyl
- A can be independently selected from the group consisting of alkyl, alkoxides, alkylsilyls, alkyl, substituted alkyl, alkylamines, halide, and hydrogen.
- Ge(NR I R II ) 4 (4)
- R I can be independently selected from the group consisting of hydrogen, alkyl and substituted alkyl
- R II can be independently selected from the group consisting of alkyl and substituted alkyl; Ge(NR I R II ) x A 1-x (5)
- x is an integer from 1 to 4.
- R I can be independently selected from the group consisting of hydrogen, alkyl and substituted alkyl
- R II can be independently selected from the group consisting of alkyl and substituted alkyl
- A can be independently selected from the group consisting of alkyl, alkoxides, alkylsilyls, alkyl, substituted alkyl, alkylamines, halide, and hydrogen.
- n is an integer from 1 to 3;
- R I can be independently selected from the group consisting of hydrogen, alkyl and substituted alkyl
- R II can be independently selected from the group consisting of alkyl and substituted alkyl; Ge n (OR) 2n+2 (7)
- n is an integer from 1 to 3;
- R can be independently selected from the group consisting of alkyl and substituted alkyl; Ge n R 2n ⁇ 2 (8)
- n is an integer from 1 to 3;
- R is an organic ligand and can be independently selected from the group consisting of alkoxides, alkylsilyls, alkyl, substituted alkyl, alkylamines.
- x is an integer from 1 to 3;
- y is an integer from 1 to 3;
- R is an organic ligand and can be independently selected from the group consisting of alkoxides, alkylsilyls, alkyl, substituted alkyl, alkylamines;
- A can be independently selected from the group consisting of alkyl, alkoxides, alkylsilyls, alkyl, substituted alkyl, alkylamines, halide, and hydrogen.
- Preferred options for R include, but are not limited to, methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, tertbutyl for all formulas, more preferred in ethyl and methyl.
- the preferred options for R include, but are not limited to, C 3 -C 10 alkyls, alkenyls, and alkynyls and substituted versions of those, more preferably C 3 -C 6 alkyls, alkenyls, and alkenyls and substituted versions of those.
- the Ge precursor comprises one or more halides.
- the precursor comprises 1, 2, or 3 halide ligands.
- the Ge precursor used in the ALD process does not comprise a halide.
- a Ge precursor that comprises an alkoxide is not used in combination with water in an ALD process.
- an amine/akylyamine or Ge-N bond containing Ge precursor may be used in combination with water.
- Preferred alkylamine Ge precursors include, but are not limited to, tetrakis(dimethylamino) germanium (TDMAGe), tetrakis(diethylamino) germanium (TDEAGe), and tetrakis(ethylmethylamino) germanium (TEMAGe).
- TDMAGe tetrakis(dimethylamino) germanium
- TDEAGe tetrakis(diethylamino) germanium
- TEMAGe tetrakis(ethylmethylamino) germanium
- the Ge precursor is TDMAGe.
- the precursor is TDEAGe.
- the precursor is TEMAGe.
- GeO 2 films were deposited in an F-450 ALCVD R&D reactor at temperatures ranging from about 150° C. to about 300° C. using germanium ethoxide (Ge(OEt) 4 ) or tetrakis(dimethylamino) germanium (TDMAGe) as the Ge precursor, and ozone (O3) as the oxygen source.
- Ge(OEt) 4 is a liquid with a vapor pressure of about 0.2 Torr at 55° C.
- TDMAGe is a liquid with a vapor pressure of about 3 Torr at 50° C. Pulse/purge times were 3.0 s/6.0 s for all precursors Ge(OEt) 4 , TDMAGe and O 3 .
- GeO 2 films were deposited by alternately and sequentially contacting a substrate in a reactor chamber with vapor pulses of Ge(OEt) 4 and O 3 at about 150° C. to about 300° C. In this temperature range growth rate of about 0.18 ⁇ /cycle to about 0.3 ⁇ /cycle was obtained ( FIG. 1 ).
- the thickness non-uniformity was about 3% to about 13% 1-sigma, and the lowest non-uniformities were obtained at 300° C. ( FIG. 3 ).
- a series of films of various thicknesses were deposited at 250° C. by varying cycle number. Film growth was linear, i.e. film thickness can be controlled by the number of cycles ( FIG. 4 ). Thinner films were also deposited at 300° C. Between about 150° C. and about 300° C., the GeO 2 film density was about 3.8 g/cm 3 to about 4 g/cm 3 (from XRR; bulk 4.23 g/cm 3 ). In particular, at 250° C.
- the growth rate was about 0.25 ⁇ /cycle and the film had a non-uniformity of less than about 10%.
- the XRR density at 250° C. was about 4.35 g/cm 3 (bulk 4.23 g/cm3), and the refractive index was modeled to be close to the bulk value from ellipsometer data (bulk 1.650 vs. modeled 1.66).
- the composition of these films was about 32-at % Ge and about 68-at % O (RBS analysis of about 50 nm GeO 2 on silicon with native oxide). See FIG. 5 .
- FIGS. 7A and 7B it can be seen that GeO 2 deposited by ALD grows linearly on HF-last Ge ( FIG. 7B ) and on HF-last Si ( FIG. 7A ) when using vapor pulses of Ge(OEt) 4 and O 3 at 300° C.
- FIGS. 8A and 8B show TEM images of an ALD Al 2 O 3 /ALD GeO 2 (37 cycles)/Ge/Si-stack/structure.
- Al 2 O 3 was deposited by ALD using vapor pulses or TMA and water or ozone.
- FIG. 8B layers can mix when using water as an oxygen source in the Al 2 O 3 ALD process, whereas when using ozone as the oxygen source in the Al 2 O 3 ALD process, two clearly separated layers can be seen in FIG. 8A .
- the reason for intermixing of the layers is unsure, and it may be caused by the electron beam in the analysis.
- FIGS. 9A and 9B and in FIG. 10 which illustrates ALD GeO 2 /ALD HfO 2 stack film conformality when grown at a reaction temperature of 250° C. and using a target GeO 2 thickness of about 30 nm.
- GeO 2 films were deposited by alternately and sequentially contacting a substrate in a reactor chamber with vapor pulses of tetrakis(dimethylamino)germanium (TDMAGe) and O 3 at 150° C. to 300° C.
- growth rate of about 0.4 ⁇ /cycle to about 0.55 ⁇ /cycle was obtained.
- the thickness non-uniformity was less than about 6%.
- the best nonuniformity of less than about 2% was observed at about 200° C.
- the GeO 2 film density was about 3.8 g/cm 3 to about 4 g/cm 3 (from XRR).
- the EDX composition was about 30 at. % Ge and about 70 at. % O.
- TDMAGe was also observed to react with water.
- GeO 2 was also deposited on a Ge surface and topped with HfO 2 . Briefly, 50 nm of GeO 2 was deposited from TDMAGe and O 3 by ALD, as described herein, on a substrate comprising either 15 nm or 1 ⁇ m Ge on Si. Subsequently, approximately 50 nm of HfO 2 was deposited over the GeO 2 by atomic layer deposition using alternating and sequential pulses of HfCl 4 and H 2 O. The deposition temperature was 300° C. No etching was observed. The results are shown in FIGS. 6A and 6B .
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
-
- pulsing a vaporized first Ge precursor into the reaction chamber to form at most a molecular monolayer of the Ge precursor on the substrate,
- removing excess Ge precursor and reaction by products, if any,
- providing a pulse of a second oxygen reactant comprising an oxygen source onto the substrate,
- removing excess second reactant and any gaseous by-products formed in the reaction between the Ge precursor layer on the first surface of the substrate and the second reactant, and
- repeating the pulsing and removing steps until a germanium oxide thin film of the desired thickness has been formed.
GeOR4 (1)
GeRxA4-x (2)
Ge(OR)xA1-x (3)
Ge(NRIRII)4 (4)
Ge(NRIRII)xA1-x (5)
Gen(NRIRII)2n+2 (6)
Gen(OR)2n+2 (7)
GenR2n−2 (8)
A3-xRxGe-GeRyA3-y (9)
Claims (20)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/773,026 US10811249B2 (en) | 2012-09-05 | 2020-01-27 | Atomic layer deposition of GeO2 |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261697007P | 2012-09-05 | 2012-09-05 | |
US201261713082P | 2012-10-12 | 2012-10-12 | |
US13/802,393 US9171715B2 (en) | 2012-09-05 | 2013-03-13 | Atomic layer deposition of GeO2 |
US14/867,833 US10553423B2 (en) | 2012-09-05 | 2015-09-28 | Atomic layer deposition of GeO2 |
US16/773,026 US10811249B2 (en) | 2012-09-05 | 2020-01-27 | Atomic layer deposition of GeO2 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/867,833 Continuation US10553423B2 (en) | 2012-09-05 | 2015-09-28 | Atomic layer deposition of GeO2 |
Publications (2)
Publication Number | Publication Date |
---|---|
US20200266053A1 US20200266053A1 (en) | 2020-08-20 |
US10811249B2 true US10811249B2 (en) | 2020-10-20 |
Family
ID=50188151
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/802,393 Active US9171715B2 (en) | 2012-09-05 | 2013-03-13 | Atomic layer deposition of GeO2 |
US14/867,833 Active US10553423B2 (en) | 2012-09-05 | 2015-09-28 | Atomic layer deposition of GeO2 |
US16/773,026 Active US10811249B2 (en) | 2012-09-05 | 2020-01-27 | Atomic layer deposition of GeO2 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/802,393 Active US9171715B2 (en) | 2012-09-05 | 2013-03-13 | Atomic layer deposition of GeO2 |
US14/867,833 Active US10553423B2 (en) | 2012-09-05 | 2015-09-28 | Atomic layer deposition of GeO2 |
Country Status (3)
Country | Link |
---|---|
US (3) | US9171715B2 (en) |
KR (3) | KR101994305B1 (en) |
TW (2) | TWI638061B (en) |
Families Citing this family (325)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10378106B2 (en) | 2008-11-14 | 2019-08-13 | Asm Ip Holding B.V. | Method of forming insulation film by modified PEALD |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US10364496B2 (en) | 2011-06-27 | 2019-07-30 | Asm Ip Holding B.V. | Dual section module having shared and unshared mass flow controllers |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
JP5780981B2 (en) * | 2012-03-02 | 2015-09-16 | 東京エレクトロン株式会社 | Method for forming germanium thin film |
US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
US9171715B2 (en) | 2012-09-05 | 2015-10-27 | Asm Ip Holding B.V. | Atomic layer deposition of GeO2 |
US9021985B2 (en) | 2012-09-12 | 2015-05-05 | Asm Ip Holdings B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US9589770B2 (en) | 2013-03-08 | 2017-03-07 | Asm Ip Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
US9484191B2 (en) | 2013-03-08 | 2016-11-01 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
US9240412B2 (en) | 2013-09-27 | 2016-01-19 | Asm Ip Holding B.V. | Semiconductor structure and device and methods of forming same using selective epitaxial process |
US9218963B2 (en) | 2013-12-19 | 2015-12-22 | Asm Ip Holding B.V. | Cyclical deposition of germanium |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
CN106068335A (en) * | 2014-03-04 | 2016-11-02 | 皮考逊公司 | Germanium or the ald of germanium oxide |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US10343907B2 (en) | 2014-03-28 | 2019-07-09 | Asm Ip Holding B.V. | Method and system for delivering hydrogen peroxide to a semiconductor processing chamber |
US9431238B2 (en) | 2014-06-05 | 2016-08-30 | Asm Ip Holding B.V. | Reactive curing process for semiconductor substrates |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
KR102263121B1 (en) | 2014-12-22 | 2021-06-09 | 에이에스엠 아이피 홀딩 비.브이. | Semiconductor device and manufacuring method thereof |
US9472573B2 (en) | 2014-12-30 | 2016-10-18 | International Business Machines Corporation | Silicon-germanium fin formation |
US10529542B2 (en) | 2015-03-11 | 2020-01-07 | Asm Ip Holdings B.V. | Cross-flow reactor and method |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US10083836B2 (en) | 2015-07-24 | 2018-09-25 | Asm Ip Holding B.V. | Formation of boron-doped titanium metal films with high work function |
US9960072B2 (en) | 2015-09-29 | 2018-05-01 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US10322384B2 (en) | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
JP6671166B2 (en) * | 2015-12-15 | 2020-03-25 | 東京エレクトロン株式会社 | Method for manufacturing insulating film laminate |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10468251B2 (en) | 2016-02-19 | 2019-11-05 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
US10501866B2 (en) | 2016-03-09 | 2019-12-10 | Asm Ip Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
US10818933B2 (en) | 2016-03-12 | 2020-10-27 | University Of Wyoming | Methods, catalysts, and supports for electrochemical devices |
US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
US9892913B2 (en) | 2016-03-24 | 2018-02-13 | Asm Ip Holding B.V. | Radial and thickness control via biased multi-port injection settings |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10087522B2 (en) | 2016-04-21 | 2018-10-02 | Asm Ip Holding B.V. | Deposition of metal borides |
US10367080B2 (en) * | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
KR102592471B1 (en) | 2016-05-17 | 2023-10-20 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming metal interconnection and method of fabricating semiconductor device using the same |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10388509B2 (en) | 2016-06-28 | 2019-08-20 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
KR102354490B1 (en) | 2016-07-27 | 2022-01-21 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10177025B2 (en) | 2016-07-28 | 2019-01-08 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102532607B1 (en) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and method of operating the same |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10395919B2 (en) | 2016-07-28 | 2019-08-27 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10079233B2 (en) | 2016-09-28 | 2018-09-18 | International Business Machines Corporation | Semiconductor device and method of forming the semiconductor device |
US10410943B2 (en) | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10435790B2 (en) | 2016-11-01 | 2019-10-08 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
KR102546317B1 (en) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Gas supply unit and substrate processing apparatus including the same |
US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
KR20180068582A (en) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US9916980B1 (en) | 2016-12-15 | 2018-03-13 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
KR20180070971A (en) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
EP3382761A1 (en) * | 2017-03-29 | 2018-10-03 | IMEC vzw | Integration of silicon-germanium semiconductor structures |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US10283353B2 (en) | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
US10103040B1 (en) | 2017-03-31 | 2018-10-16 | Asm Ip Holding B.V. | Apparatus and method for manufacturing a semiconductor device |
KR102457289B1 (en) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing a thin film and manufacturing a semiconductor device |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10446393B2 (en) | 2017-05-08 | 2019-10-15 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
US10504742B2 (en) | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
KR20190009245A (en) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods for forming a semiconductor device structure and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10312055B2 (en) | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10236177B1 (en) | 2017-08-22 | 2019-03-19 | ASM IP Holding B.V.. | Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
KR102491945B1 (en) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR102401446B1 (en) | 2017-08-31 | 2022-05-24 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
KR102630301B1 (en) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
KR102443047B1 (en) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate and a device manufactured by the same |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
US10141420B1 (en) | 2017-11-22 | 2018-11-27 | International Business Machines Corporation | Transistors with dielectric-isolated source and drain regions |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
KR102597978B1 (en) | 2017-11-27 | 2023-11-06 | 에이에스엠 아이피 홀딩 비.브이. | Storage device for storing wafer cassettes for use with batch furnaces |
CN111344522B (en) | 2017-11-27 | 2022-04-12 | 阿斯莫Ip控股公司 | Including clean mini-environment device |
US10629749B2 (en) | 2017-11-30 | 2020-04-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of treating interfacial layer on silicon germanium |
US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
US10276687B1 (en) * | 2017-12-20 | 2019-04-30 | International Business Machines Corporation | Formation of self-aligned bottom spacer for vertical transistors |
US10559675B2 (en) | 2017-12-21 | 2020-02-11 | International Business Machines Corporation | Stacked silicon nanotubes |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
KR20200108016A (en) | 2018-01-19 | 2020-09-16 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing a gap fill layer by plasma assisted deposition |
TW202325889A (en) | 2018-01-19 | 2023-07-01 | 荷蘭商Asm 智慧財產控股公司 | Deposition method |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
CN111699278B (en) | 2018-02-14 | 2023-05-16 | Asm Ip私人控股有限公司 | Method for depositing ruthenium-containing films on substrates by cyclical deposition processes |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
KR102636427B1 (en) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method and apparatus |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US10971584B2 (en) | 2018-03-07 | 2021-04-06 | International Business Machines Corporation | Low contact resistance nanowire FETs |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (en) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
KR102501472B1 (en) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method |
TWI811348B (en) | 2018-05-08 | 2023-08-11 | 荷蘭商Asm 智慧財產控股公司 | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
TW202349473A (en) | 2018-05-11 | 2023-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Methods for forming a doped metal carbide film on a substrate and related semiconductor device structures |
KR102596988B1 (en) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate and a device manufactured by the same |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US10665511B2 (en) | 2018-06-07 | 2020-05-26 | International Business Machines Corporation | Self-limiting liners for increasing contact trench volume in N-type and P-type transistors |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
KR102568797B1 (en) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing system |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
US10504794B1 (en) | 2018-06-25 | 2019-12-10 | International Business Machines Corporation | Self-aligned silicide/germanide formation to reduce external resistance in a vertical field-effect transistor |
CN112292478A (en) | 2018-06-27 | 2021-01-29 | Asm Ip私人控股有限公司 | Cyclic deposition methods for forming metal-containing materials and films and structures containing metal-containing materials |
TWI815915B (en) | 2018-06-27 | 2023-09-21 | 荷蘭商Asm Ip私人控股有限公司 | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
KR20200002519A (en) | 2018-06-29 | 2020-01-08 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing a thin film and manufacturing a semiconductor device |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
KR20200030162A (en) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | Method for deposition of a thin film |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (en) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | Substrate holding apparatus, system including the same, and method of using the same |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (en) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102546322B1 (en) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
KR102605121B1 (en) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (en) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and substrate processing apparatus including the same |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (en) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | A method for cleaning a substrate processing apparatus |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
TW202037745A (en) | 2018-12-14 | 2020-10-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming device structure, structure formed by the method and system for performing the method |
TW202405220A (en) | 2019-01-17 | 2024-02-01 | 荷蘭商Asm Ip 私人控股有限公司 | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
KR20200091543A (en) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | Semiconductor processing device |
CN111524788B (en) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | Method for topologically selective film formation of silicon oxide |
KR102626263B1 (en) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | Cyclical deposition method including treatment step and apparatus for same |
CN111593319B (en) | 2019-02-20 | 2023-05-30 | Asm Ip私人控股有限公司 | Cyclical deposition method and apparatus for filling recesses formed in a substrate surface |
KR20200102357A (en) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for plug fill deposition in 3-d nand applications |
JP2020136678A (en) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | Method for filing concave part formed inside front surface of base material, and device |
JP2020133004A (en) | 2019-02-22 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | Base material processing apparatus and method for processing base material |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
KR20200108243A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Structure Including SiOC Layer and Method of Forming Same |
KR20200108242A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer |
JP2020167398A (en) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | Door opener and substrate processing apparatus provided therewith |
KR20200116855A (en) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | Method of manufacturing semiconductor device |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR20200125453A (en) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Gas-phase reactor system and method of using same |
KR20200130121A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Chemical source vessel with dip tube |
KR20200130118A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Method for Reforming Amorphous Carbon Polymer Film |
KR20200130652A (en) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing material onto a surface and structure formed according to the method |
JP2020188255A (en) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | Wafer boat handling device, vertical batch furnace, and method |
JP2020188254A (en) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | Wafer boat handling device, vertical batch furnace, and method |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141002A (en) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | Method of using a gas-phase reactor system including analyzing exhausted gas |
KR20200143254A (en) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (en) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | Temperature control assembly for substrate processing apparatus and method of using same |
JP7499079B2 (en) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | Plasma device using coaxial waveguide and substrate processing method |
CN112216646A (en) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | Substrate supporting assembly and substrate processing device comprising same |
KR20210010307A (en) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR20210010816A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Radical assist ignition plasma system and method |
KR20210010820A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods of forming silicon germanium structures |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
CN112242296A (en) | 2019-07-19 | 2021-01-19 | Asm Ip私人控股有限公司 | Method of forming topologically controlled amorphous carbon polymer films |
TW202113936A (en) | 2019-07-29 | 2021-04-01 | 荷蘭商Asm Ip私人控股有限公司 | Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation |
CN112309899A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112309900A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
CN112323048B (en) | 2019-08-05 | 2024-02-09 | Asm Ip私人控股有限公司 | Liquid level sensor for chemical source container |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
JP2021031769A (en) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | Production apparatus of mixed gas of film deposition raw material and film deposition apparatus |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
KR20210024423A (en) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for forming a structure with a hole |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210024420A (en) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
KR20210029090A (en) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | Methods for selective deposition using a sacrificial capping layer |
KR20210029663A (en) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (en) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | Method for forming topologically selective silicon oxide film by cyclic plasma enhanced deposition process |
KR20210042810A (en) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | Reactor system including a gas distribution assembly for use with activated species and method of using same |
CN112635282A (en) | 2019-10-08 | 2021-04-09 | Asm Ip私人控股有限公司 | Substrate processing apparatus having connection plate and substrate processing method |
KR20210043460A (en) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming a photoresist underlayer and structure including same |
US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
TWI834919B (en) | 2019-10-16 | 2024-03-11 | 荷蘭商Asm Ip私人控股有限公司 | Method of topology-selective film formation of silicon oxide |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
CN112680716A (en) * | 2019-10-17 | 2021-04-20 | Asm Ip 控股有限公司 | Atomic layer deposition of indium germanium zinc oxide |
KR20210047808A (en) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for selectively etching films |
KR20210050453A (en) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (en) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | Structures with doped semiconductor layers and methods and systems for forming same |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (en) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
CN112951697A (en) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
US11450529B2 (en) | 2019-11-26 | 2022-09-20 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
CN112885692A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112885693A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
JP2021090042A (en) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | Substrate processing apparatus and substrate processing method |
KR20210070898A (en) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
KR20210080214A (en) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | Methods for filling a gap feature on a substrate and related semiconductor structures |
TW202140135A (en) | 2020-01-06 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | Gas supply assembly and valve plate assembly |
US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
TW202129068A (en) | 2020-01-20 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | Method of forming thin film and method of modifying surface of thin film |
TW202130846A (en) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming structures including a vanadium or indium layer |
TW202146882A (en) | 2020-02-04 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of verifying an article, apparatus for verifying an article, and system for verifying a reaction chamber |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
TW202146715A (en) | 2020-02-17 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Method for growing phosphorous-doped silicon layer and system of the same |
TW202203344A (en) | 2020-02-28 | 2022-01-16 | 荷蘭商Asm Ip控股公司 | System dedicated for parts cleaning |
KR20210116240A (en) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate handling device with adjustable joints |
KR20210116249A (en) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | lockout tagout assembly and system and method of using same |
CN113394086A (en) | 2020-03-12 | 2021-09-14 | Asm Ip私人控股有限公司 | Method for producing a layer structure having a target topological profile |
KR20210124042A (en) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | Thin film forming method |
TW202146689A (en) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | Method for forming barrier layer and method for manufacturing semiconductor device |
TW202145344A (en) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | Apparatus and methods for selectively etching silcon oxide films |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
KR20210132600A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
TW202146831A (en) | 2020-04-24 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Vertical batch furnace assembly, and method for cooling vertical batch furnace |
TW202140831A (en) | 2020-04-24 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming vanadium nitride–containing layer and structure comprising the same |
KR20210134226A (en) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | Solid source precursor vessel |
KR20210134869A (en) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Fast FOUP swapping with a FOUP handler |
KR20210141379A (en) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Laser alignment fixture for a reactor system |
KR20210143653A (en) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR20210145078A (en) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | Structures including multiple carbon layers and methods of forming and using same |
KR20210145080A (en) | 2020-05-22 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus for depositing thin films using hydrogen peroxide |
TW202201602A (en) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing device |
TW202218133A (en) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Method for forming a layer provided with silicon |
TW202217953A (en) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing method |
KR20220006455A (en) | 2020-07-08 | 2022-01-17 | 에이에스엠 아이피 홀딩 비.브이. | Method for processing a substrate |
KR20220010438A (en) | 2020-07-17 | 2022-01-25 | 에이에스엠 아이피 홀딩 비.브이. | Structures and methods for use in photolithography |
TW202204662A (en) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | Method and system for depositing molybdenum layers |
US11725280B2 (en) | 2020-08-26 | 2023-08-15 | Asm Ip Holding B.V. | Method for forming metal silicon oxide and metal silicon oxynitride layers |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
US12009224B2 (en) | 2020-09-29 | 2024-06-11 | Asm Ip Holding B.V. | Apparatus and method for etching metal nitrides |
TW202229613A (en) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of depositing material on stepped structure |
TW202217037A (en) | 2020-10-22 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of depositing vanadium metal, structure, device and a deposition assembly |
TW202223136A (en) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | Method for forming layer on substrate, and semiconductor processing system |
KR20220076343A (en) | 2020-11-30 | 2022-06-08 | 에이에스엠 아이피 홀딩 비.브이. | an injector configured for arrangement within a reaction chamber of a substrate processing apparatus |
US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
TW202231903A (en) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | Transition metal deposition method, transition metal layer, and deposition assembly for depositing transition metal on substrate |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
CN115341276B (en) * | 2022-08-23 | 2024-03-01 | 中国科学院微电子研究所 | r-GeO 2 Thin film single crystal and method for growing the same |
Citations (138)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4363828A (en) | 1979-12-12 | 1982-12-14 | International Business Machines Corp. | Method for depositing silicon films and related materials by a glow discharge in a disiland or higher order silane gas |
JPH04245419A (en) | 1991-01-30 | 1992-09-02 | Kyushu Electron Metal Co Ltd | Manufacture of semiconductor substrate |
US5221556A (en) | 1987-06-24 | 1993-06-22 | Epsilon Technology, Inc. | Gas injectors for reaction chambers in CVD systems |
US5221413A (en) | 1991-04-24 | 1993-06-22 | At&T Bell Laboratories | Method for making low defect density semiconductor heterostructure and devices made thereby |
US5256550A (en) | 1988-11-29 | 1993-10-26 | Hewlett-Packard Company | Fabricating a semiconductor device with strained Si1-x Gex layer |
US5259918A (en) | 1991-06-12 | 1993-11-09 | International Business Machines Corporation | Heteroepitaxial growth of germanium on silicon by UHV/CVD |
US5308788A (en) | 1991-09-13 | 1994-05-03 | Motorola, Inc. | Temperature controlled process for the epitaxial growth of a film of material |
JPH0737823A (en) | 1993-07-21 | 1995-02-07 | Oki Electric Ind Co Ltd | Semiconductor film forming method and device |
US5442205A (en) | 1991-04-24 | 1995-08-15 | At&T Corp. | Semiconductor heterostructure devices with strained semiconductor layers |
US5445897A (en) | 1989-11-22 | 1995-08-29 | Mitsubishi Kasei Polytec Company | Epitaxial wafer and process for producing the same |
US5633516A (en) | 1994-07-25 | 1997-05-27 | Hitachi, Ltd. | Lattice-mismatched crystal structures and semiconductor device using the same |
US5766999A (en) | 1995-03-28 | 1998-06-16 | Nec Corporation | Method for making self-aligned bipolar transistor |
EP0858101A2 (en) | 1997-02-06 | 1998-08-12 | Nec Corporation | Manufacturing of an Si/SiGe super lattice structure by epitaxial growth |
JPH10256169A (en) | 1997-03-10 | 1998-09-25 | Nec Corp | Manufacture of semiconductor device |
US5847409A (en) | 1995-05-26 | 1998-12-08 | Nec Corporation | Semiconductor device with superlattice-structured graded buffer layer and fabrication method thereof |
US5879970A (en) | 1996-09-05 | 1999-03-09 | Nec Corporation | Process of growing polycrystalline silicon-germanium alloy having large silicon content |
US5891769A (en) | 1997-04-07 | 1999-04-06 | Motorola, Inc. | Method for forming a semiconductor device having a heteroepitaxial layer |
JP2000021783A (en) | 1998-06-30 | 2000-01-21 | Toshiba Corp | Semiconductor device and its manufacture |
US6030894A (en) | 1996-12-04 | 2000-02-29 | Nec Corporation | Method for manufacturing a semiconductor device having contact plug made of Si/SiGe/Si |
WO2000015885A1 (en) | 1998-09-10 | 2000-03-23 | France Telecom | Method for obtaining a monocrystalline germanium layer on a monocrystalline silicon substrate, and resulting products |
US6093252A (en) | 1995-08-03 | 2000-07-25 | Asm America, Inc. | Process chamber with inner support |
US6107653A (en) | 1997-06-24 | 2000-08-22 | Massachusetts Institute Of Technology | Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization |
WO2000054338A1 (en) | 1999-03-12 | 2000-09-14 | International Business Machines Corporation | High speed ge channel heterostructures for field effect devices |
JP2000286413A (en) | 1999-03-12 | 2000-10-13 | Internatl Business Mach Corp <Ibm> | Si/SiGe HETEROSTRUCTURE FOR HIGH-SPEED COMPOSITE P-CHANNEL FIELD EFFECT DEVICE |
US6154475A (en) | 1997-12-04 | 2000-11-28 | The United States Of America As Represented By The Secretary Of The Air Force | Silicon-based strain-symmetrized GE-SI quantum lasers |
US6235568B1 (en) | 1999-01-22 | 2001-05-22 | Intel Corporation | Semiconductor device having deposited silicon regions and a method of fabrication |
WO2001041544A2 (en) | 1999-12-11 | 2001-06-14 | Asm America, Inc. | Deposition of gate stacks including silicon germanium layers |
US6319782B1 (en) | 1998-09-10 | 2001-11-20 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method of fabricating the same |
US6346732B1 (en) | 1999-05-14 | 2002-02-12 | Kabushiki Kaisha Toshiba | Semiconductor device with oxide mediated epitaxial layer |
US6373112B1 (en) | 1999-12-02 | 2002-04-16 | Intel Corporation | Polysilicon-germanium MOSFET gate electrodes |
US6411548B1 (en) | 1999-07-13 | 2002-06-25 | Kabushiki Kaisha Toshiba | Semiconductor memory having transistors connected in series |
US6425951B1 (en) | 1998-02-18 | 2002-07-30 | International Business Machines Corporation | Advance integrated chemical vapor deposition (AICVD) for semiconductor |
US6429098B1 (en) | 1997-12-29 | 2002-08-06 | FRANCE TéLéCOM | Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively, and multilayer products obtained |
US6455871B1 (en) | 2000-12-27 | 2002-09-24 | Electronics And Telecommunications Research Institute | SiGe MODFET with a metal-oxide film and method for fabricating the same |
US6461945B1 (en) | 2000-06-22 | 2002-10-08 | Advanced Micro Devices, Inc. | Solid phase epitaxy process for manufacturing transistors having silicon/germanium channel regions |
US6464780B1 (en) | 1998-01-27 | 2002-10-15 | Forschungszentrum Julich Gmbh | Method for the production of a monocrystalline layer on a substrate with a non-adapted lattice and component containing one or several such layers |
US6475865B1 (en) | 1997-08-21 | 2002-11-05 | United Microelectronics Corp. | Method of fabricating semiconductor device |
US6482705B1 (en) | 2001-04-03 | 2002-11-19 | Advanced Micro Devices, Inc. | Method of fabricating a semiconductor device having a MOSFET with an amorphous SiGe gate electrode and an elevated crystalline SiGe source/drain structure and a device thereby formed |
US20020173130A1 (en) | 2001-02-12 | 2002-11-21 | Pomerede Christophe F. | Integration of High K Gate Dielectric |
US20020173104A1 (en) | 2001-05-17 | 2002-11-21 | Chang Kent Kuohua | Method for preventing gate depletion effects of MOS transistor |
WO2002097864A2 (en) | 2001-05-30 | 2002-12-05 | Asm America, Inc | Low temperature load and bake |
JP2003023146A (en) | 2001-07-06 | 2003-01-24 | Mitsubishi Materials Silicon Corp | SEMICONDUCTOR SUBSTRATE, FIELD EFFECT TRANSISTOR, FORMING METHOD OF SiGe LAYER AND FORMING METHOD OF DISTORTED Si LAYER USING THE SAME, AND MANUFACTURING METHOD OF FIELD EFFECT TRANSISTOR |
US6525338B2 (en) | 2000-08-01 | 2003-02-25 | Mitsubishi Materials Corporation | Semiconductor substrate, field effect transistor, method of forming SiGe layer and method of forming strained Si layer using same, and method of manufacturing field effect transistor |
US20030045063A1 (en) | 2001-09-03 | 2003-03-06 | Hitachi, Ltd. | Semiconductor device and method for manufacturing the same |
US6555839B2 (en) | 2000-05-26 | 2003-04-29 | Amberwave Systems Corporation | Buried channel strained silicon FET using a supply layer created through ion implantation |
US20030080394A1 (en) | 2001-10-31 | 2003-05-01 | Babcock Jeffrey A. | Control of dopant diffusion from polysilicon emitters in bipolar integrated circuits |
US20030082300A1 (en) | 2001-02-12 | 2003-05-01 | Todd Michael A. | Improved Process for Deposition of Semiconductor Films |
US6562736B2 (en) | 2000-09-13 | 2003-05-13 | Sony Corporation | Manufacturing method for semiconductor device |
US6573126B2 (en) | 2000-08-16 | 2003-06-03 | Massachusetts Institute Of Technology | Process for producing semiconductor article using graded epitaxial growth |
US20030124818A1 (en) | 2001-12-28 | 2003-07-03 | Applied Materials, Inc. | Method and apparatus for forming silicon containing films |
US6592942B1 (en) | 2000-07-07 | 2003-07-15 | Asm International N.V. | Method for vapour deposition of a film onto a substrate |
US20030139000A1 (en) | 2002-01-23 | 2003-07-24 | International Business Machines Corporation | Method of creating high-quality relaxed SiGe-on-insulator for strained Si CMOS applications |
US20030143783A1 (en) | 2002-01-31 | 2003-07-31 | Maa Jer-Shen | Method to form relaxed SiGe layer with high Ge content |
US20030153161A1 (en) | 2002-02-11 | 2003-08-14 | Chu Jack O. | Strained si based layer made by uhv-cvd, and devices therein |
US20030157787A1 (en) | 2002-02-21 | 2003-08-21 | Anand Murthy | Method of forming a germanium film on a semiconductor substrate that includes the formation of a graded silicon-germanium buffer layer prior to the formation of a germanium layer |
US20030162348A1 (en) | 2001-11-30 | 2003-08-28 | Taiwan Semiconductor Manufacturing Company | Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layer |
US6620743B2 (en) | 2001-03-26 | 2003-09-16 | Asm America, Inc. | Stable, oxide-free silicon surface preparation |
US20030190791A1 (en) | 2002-04-04 | 2003-10-09 | International Business Machines Corporation | Germanium field effect transistor and method of fabricating the same |
US6633066B1 (en) | 2000-01-07 | 2003-10-14 | Samsung Electronics Co., Ltd. | CMOS integrated circuit devices and substrates having unstrained silicon active layers |
US6635110B1 (en) | 1999-06-25 | 2003-10-21 | Massachusetts Institute Of Technology | Cyclic thermal anneal for dislocation reduction |
US6645836B2 (en) | 2000-03-27 | 2003-11-11 | Matsushita Electric Industrial Co., Ltd. | Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbon |
US6649980B2 (en) | 2000-12-11 | 2003-11-18 | Sony Corporation | Semiconductor device with MOS transistors sharing electrode |
US20030230233A1 (en) | 1999-09-20 | 2003-12-18 | Fitzgerald Eugene A. | Method of producing high quality relaxed silicon germanium layers |
US20030235931A1 (en) | 2002-06-19 | 2003-12-25 | Kazumi Wada | Ge photodetectors |
US20040075105A1 (en) | 2002-08-23 | 2004-04-22 | Amberwave Systems Corporation | Semiconductor heterostructures having reduced dislocation pile-ups and related methods |
US20040097022A1 (en) | 2002-05-07 | 2004-05-20 | Werkhoven Christiaan J. | Silicon-on-insulator structures and methods |
US6749687B1 (en) | 1998-01-09 | 2004-06-15 | Asm America, Inc. | In situ growth of oxide and silicon layers |
JP2004179452A (en) | 2002-11-28 | 2004-06-24 | Shin Etsu Handotai Co Ltd | Hetero epitaxial wafer |
US20040137167A1 (en) | 2000-11-22 | 2004-07-15 | Tue Nguyen | Plasma enhanced pulsed layer deposition |
US6770134B2 (en) | 2001-05-24 | 2004-08-03 | Applied Materials, Inc. | Method for fabricating waveguides |
US20040151845A1 (en) | 2003-02-04 | 2004-08-05 | Tue Nguyen | Nanolayer deposition process |
US20040157409A1 (en) | 2002-07-09 | 2004-08-12 | Bruno Ghyselen | Transfer of a thin layer from a wafer comprising a buffer layer |
US20040178406A1 (en) | 2003-03-15 | 2004-09-16 | Chu Jack Oon | Dual strain-state SiGe layers for microelectronics |
US20040192002A1 (en) | 2003-03-31 | 2004-09-30 | Ravindra Soman | Method for fabricating a heterojunction bipolar transistor |
US20040197945A1 (en) | 2003-04-05 | 2004-10-07 | Rohm And Haas Electronic Materials L.L.C. | Germanium compounds |
US20040219735A1 (en) | 2003-03-13 | 2004-11-04 | Brabant Paul D. | Epitaxial semiconductor deposition methods and structures |
US20040217845A1 (en) | 1998-07-15 | 2004-11-04 | Silver Eric H | Method for making an epitaxial germanium temperature sensor |
US6830964B1 (en) | 2003-06-26 | 2004-12-14 | Rj Mears, Llc | Method for making semiconductor device including band-engineered superlattice |
US6833294B1 (en) | 2003-06-26 | 2004-12-21 | Rj Mears, Llc | Method for making semiconductor device including band-engineered superlattice |
US6844213B2 (en) | 2001-06-14 | 2005-01-18 | Integrated Sensing Systems | Process of forming a microneedle and microneedle formed thereby |
US6855649B2 (en) | 2001-06-12 | 2005-02-15 | International Business Machines Corporation | Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing |
US20050054175A1 (en) | 2003-07-23 | 2005-03-10 | Matthias Bauer | Deposition of silicon germanium on silicon-on-insulator structures and bulk substrates |
US20050051795A1 (en) | 2003-07-30 | 2005-03-10 | Chantal Arena | Epitaxial growth of relaxed silicon germanium layers |
US20050067377A1 (en) | 2003-09-25 | 2005-03-31 | Ryan Lei | Germanium-on-insulator fabrication utilizing wafer bonding |
US6875279B2 (en) | 2001-11-16 | 2005-04-05 | International Business Machines Corporation | Single reactor, multi-pressure chemical vapor deposition for semiconductor devices |
US20050079692A1 (en) | 2003-10-10 | 2005-04-14 | Applied Materials, Inc. | Methods to fabricate MOSFET devices using selective deposition process |
US20050081787A1 (en) | 2003-10-15 | 2005-04-21 | Ki-Vin Im | Apparatus and method for supplying a source, and method of depositing an atomic layer using the same |
US6887773B2 (en) | 2002-06-19 | 2005-05-03 | Luxtera, Inc. | Methods of incorporating germanium within CMOS process |
US20050150447A1 (en) | 2003-01-07 | 2005-07-14 | Bruno Ghyselen | Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereof |
US20050170577A1 (en) | 2004-01-30 | 2005-08-04 | Taiwan Semiconductor Manufacturing Co., Ltd | Strained silicon layer fabrication with reduced dislocation defect density |
US20050192193A1 (en) | 2004-03-01 | 2005-09-01 | Korzenski Michael B. | Enhancement of silicon-containing particulate material removal using supercritical fluid-based compositions |
US20050191826A1 (en) | 2004-02-27 | 2005-09-01 | Matthia Bauer | Germanium deposition |
US6953736B2 (en) | 2002-07-09 | 2005-10-11 | S.O.I.Tec Silicon On Insulator Technologies S.A. | Process for transferring a layer of strained semiconductor material |
US6960537B2 (en) | 2001-10-02 | 2005-11-01 | Asm America, Inc. | Incorporation of nitrogen into high k dielectric film |
US20050266700A1 (en) | 2004-05-05 | 2005-12-01 | Jursich Gregory M | Codeposition of hafnium-germanium oxides on substrates used in or for semiconductor devices |
US20050277260A1 (en) | 2004-06-14 | 2005-12-15 | Cohen Guy M | Mixed orientation and mixed material semiconductor-on-insulator wafer |
US6995076B2 (en) | 2000-09-05 | 2006-02-07 | The Regents Of The University Of California | Relaxed SiGe films by surfactant mediation |
US20060057825A1 (en) | 2002-12-18 | 2006-03-16 | Agere Systems Inc. | Semiconductor devices with reduced active region defects and unique contacting schemes |
US7022593B2 (en) | 2003-03-12 | 2006-04-04 | Asm America, Inc. | SiGe rectification process |
US7037856B1 (en) | 2005-06-10 | 2006-05-02 | Sharp Laboratories Of America, Inc. | Method of fabricating a low-defect strained epitaxial germanium film on silicon |
US20060138393A1 (en) | 2004-12-27 | 2006-06-29 | Samsung Electronics Co., Ltd. | Ge precursor, GST thin layer formed using the same, phase-change memory device including the GST thin layer, and method of manufacturing the GST thin layer |
US20060145188A1 (en) | 2005-01-05 | 2006-07-06 | Siltronic Ag | Semiconductor wafer having a silicon-germanium layer, and method for its production |
US20060199357A1 (en) | 2005-03-07 | 2006-09-07 | Wan Yuet M | High stress nitride film and method for formation thereof |
US20060211230A1 (en) | 2005-03-21 | 2006-09-21 | Christophe Figuet | Laminated layer structure and method for forming the same |
US20060216417A1 (en) | 2005-03-10 | 2006-09-28 | Todd Michael A | System for control of gas injectors |
US20070044706A1 (en) | 2005-08-26 | 2007-03-01 | Samsung Electronics Co., Ltd. | Method of forming a crystalline structure and a method of manufacturing a semiconductor device |
US20070048956A1 (en) | 2005-08-30 | 2007-03-01 | Tokyo Electron Limited | Interrupted deposition process for selective deposition of Si-containing films |
US20070051975A1 (en) | 2005-09-07 | 2007-03-08 | Christophe Figuet | Semiconductor heterostructure and method for forming same |
US20070117335A1 (en) | 2004-09-02 | 2007-05-24 | Micron Technology, Inc. | Double-sided container capacitors using a sacrificial layer |
US20070117398A1 (en) | 2005-11-24 | 2007-05-24 | Mitsuhiro Okada | Film formation apparatus and method of using the same |
US20070134886A1 (en) | 2004-06-22 | 2007-06-14 | Texas Instruments Incorporated | Methods and systems to mitigate etch stop clipping for shallow trench isolation fabrication |
US20070155138A1 (en) | 2005-05-24 | 2007-07-05 | Pierre Tomasini | Apparatus and method for depositing silicon germanium films |
US20070264801A1 (en) | 2006-05-09 | 2007-11-15 | Cody Nyles W | Semiconductor buffer structures |
US20080017952A1 (en) | 2006-07-24 | 2008-01-24 | Asm America, Inc. | Strained layers within semiconductor buffer structures |
US7357838B2 (en) | 2002-08-27 | 2008-04-15 | Taiwan Semiconductor Manufacturing Company | Relaxed silicon germanium substrate with low defect density |
US7390725B2 (en) | 2004-01-12 | 2008-06-24 | Sharp Laboratories Of America, Inc. | Strained silicon on insulator from film transfer and relaxation by hydrogen implantation |
US20090072271A1 (en) | 2007-09-18 | 2009-03-19 | Leonardo Gomez | EPITAXIAL GROWTH OF THIN SMOOTH GERMANIUM (Ge) ON SILICON (Si) UTILIZING AN INTERFACIAL SILICON GERMANIUM (SiGe) PULSE GROWTH METHOD |
US20090203197A1 (en) | 2008-02-08 | 2009-08-13 | Hiroji Hanawa | Novel method for conformal plasma immersed ion implantation assisted by atomic layer deposition |
US20090305458A1 (en) | 2006-11-02 | 2009-12-10 | Advanced Technology Materials, Inc. | Antimony and germanium complexes useful for cvd/ald of metal thin films |
US20100006024A1 (en) | 2003-03-13 | 2010-01-14 | Asm America, Inc. | Epitaxial semiconductor deposition methods and structures |
US7901968B2 (en) | 2006-03-23 | 2011-03-08 | Asm America, Inc. | Heteroepitaxial deposition over an oxidized surface |
WO2011027321A1 (en) | 2009-09-02 | 2011-03-10 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Dihalide germanium(ii) precursors for germanium-containing film depositions |
US20110117732A1 (en) | 2009-11-17 | 2011-05-19 | Asm America, Inc. | Cyclical epitaxial deposition and etch |
US20110256726A1 (en) | 2010-04-15 | 2011-10-20 | Adrien Lavoie | Plasma activated conformal film deposition |
US20110262660A1 (en) | 2010-04-22 | 2011-10-27 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Chalcogenide-containing precursors, methods of making, and methods of using the same for thin film deposition |
US20110315992A1 (en) | 2010-06-25 | 2011-12-29 | Applied Materials, Inc. | Plasma-enhanced chemical vapor deposition of crystalline germanium |
US20120009802A1 (en) | 2010-04-15 | 2012-01-12 | Adrien Lavoie | Plasma activated conformal dielectric film deposition |
US20120028454A1 (en) | 2010-04-15 | 2012-02-02 | Shankar Swaminathan | Plasma activated conformal dielectric film deposition |
US20120028410A1 (en) | 2010-07-27 | 2012-02-02 | Micron Technology, Inc. | Methods of forming germanium-antimony-tellurium materials and a method of forming a semiconductor device structure including the same |
US20120244688A1 (en) | 2006-06-07 | 2012-09-27 | Asm America, Inc. | Selective epitaxial formation of semiconductive films |
US20120247386A1 (en) | 2011-03-28 | 2012-10-04 | Applied Materials, Inc. | Method and apparatus for the selective deposition of epitaxial germanium stressor alloys |
US20130045374A1 (en) | 2011-08-17 | 2013-02-21 | National Applied Research Laboratories | Nano-laminated film with transparent conductive property and water-vapor resistance function and method thereof |
US8454928B2 (en) | 2007-09-17 | 2013-06-04 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Tellurium precursors for GST deposition |
US20130210217A1 (en) | 2008-01-28 | 2013-08-15 | Air Products And Chemicals, Inc. | Precursors for GST Films in ALD/CVD Processes |
US20130233240A1 (en) | 2012-03-06 | 2013-09-12 | Asm America, Inc. | Methods and apparatuses for epitaxial films with high germanium content |
US8623734B2 (en) | 2011-06-01 | 2014-01-07 | International Business Machines Corporation | Method to selectively grow phase change material inside a via hole |
US20140065841A1 (en) | 2012-09-05 | 2014-03-06 | Asm Ip Holding B.V. | ATOMIC LAYER DEPOSITION OF GeO2 |
US20140120738A1 (en) | 2012-11-01 | 2014-05-01 | Asm Ip Holding B.V. | Method of depositing thin film |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003062812A1 (en) * | 2002-01-18 | 2003-07-31 | Arkray, Inc. | Analyzer having temperature sensor |
ATE343216T1 (en) * | 2003-07-08 | 2006-11-15 | Sonion Roskilde As | CONTROL DEVICE WITH WAKE-UP ZONE |
EP2526185A4 (en) * | 2010-01-22 | 2013-07-24 | Univ Arizona | BACTERIUM COMPRISING A REGULATED rfaH NUCLEIC ACID |
-
2013
- 2013-03-13 US US13/802,393 patent/US9171715B2/en active Active
- 2013-08-30 TW TW106119554A patent/TWI638061B/en active
- 2013-08-30 TW TW102131162A patent/TWI596227B/en active
- 2013-09-04 KR KR1020130106028A patent/KR101994305B1/en active IP Right Grant
-
2015
- 2015-09-28 US US14/867,833 patent/US10553423B2/en active Active
-
2019
- 2019-06-24 KR KR1020190074914A patent/KR102104390B1/en active IP Right Grant
-
2020
- 2020-01-27 US US16/773,026 patent/US10811249B2/en active Active
- 2020-04-20 KR KR1020200047259A patent/KR102192161B1/en active IP Right Grant
Patent Citations (180)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4363828A (en) | 1979-12-12 | 1982-12-14 | International Business Machines Corp. | Method for depositing silicon films and related materials by a glow discharge in a disiland or higher order silane gas |
US5221556A (en) | 1987-06-24 | 1993-06-22 | Epsilon Technology, Inc. | Gas injectors for reaction chambers in CVD systems |
US5256550A (en) | 1988-11-29 | 1993-10-26 | Hewlett-Packard Company | Fabricating a semiconductor device with strained Si1-x Gex layer |
US5445897A (en) | 1989-11-22 | 1995-08-29 | Mitsubishi Kasei Polytec Company | Epitaxial wafer and process for producing the same |
JPH04245419A (en) | 1991-01-30 | 1992-09-02 | Kyushu Electron Metal Co Ltd | Manufacture of semiconductor substrate |
US5221413A (en) | 1991-04-24 | 1993-06-22 | At&T Bell Laboratories | Method for making low defect density semiconductor heterostructure and devices made thereby |
US5442205A (en) | 1991-04-24 | 1995-08-15 | At&T Corp. | Semiconductor heterostructure devices with strained semiconductor layers |
US5259918A (en) | 1991-06-12 | 1993-11-09 | International Business Machines Corporation | Heteroepitaxial growth of germanium on silicon by UHV/CVD |
US5308788A (en) | 1991-09-13 | 1994-05-03 | Motorola, Inc. | Temperature controlled process for the epitaxial growth of a film of material |
JPH0737823A (en) | 1993-07-21 | 1995-02-07 | Oki Electric Ind Co Ltd | Semiconductor film forming method and device |
US5633516A (en) | 1994-07-25 | 1997-05-27 | Hitachi, Ltd. | Lattice-mismatched crystal structures and semiconductor device using the same |
US5766999A (en) | 1995-03-28 | 1998-06-16 | Nec Corporation | Method for making self-aligned bipolar transistor |
US5847409A (en) | 1995-05-26 | 1998-12-08 | Nec Corporation | Semiconductor device with superlattice-structured graded buffer layer and fabrication method thereof |
US6093252A (en) | 1995-08-03 | 2000-07-25 | Asm America, Inc. | Process chamber with inner support |
US5879970A (en) | 1996-09-05 | 1999-03-09 | Nec Corporation | Process of growing polycrystalline silicon-germanium alloy having large silicon content |
US6030894A (en) | 1996-12-04 | 2000-02-29 | Nec Corporation | Method for manufacturing a semiconductor device having contact plug made of Si/SiGe/Si |
EP0858101A2 (en) | 1997-02-06 | 1998-08-12 | Nec Corporation | Manufacturing of an Si/SiGe super lattice structure by epitaxial growth |
JPH10256169A (en) | 1997-03-10 | 1998-09-25 | Nec Corp | Manufacture of semiconductor device |
US5891769A (en) | 1997-04-07 | 1999-04-06 | Motorola, Inc. | Method for forming a semiconductor device having a heteroepitaxial layer |
US6107653A (en) | 1997-06-24 | 2000-08-22 | Massachusetts Institute Of Technology | Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization |
US6475865B1 (en) | 1997-08-21 | 2002-11-05 | United Microelectronics Corp. | Method of fabricating semiconductor device |
US6154475A (en) | 1997-12-04 | 2000-11-28 | The United States Of America As Represented By The Secretary Of The Air Force | Silicon-based strain-symmetrized GE-SI quantum lasers |
US6429098B1 (en) | 1997-12-29 | 2002-08-06 | FRANCE TéLéCOM | Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively, and multilayer products obtained |
US6749687B1 (en) | 1998-01-09 | 2004-06-15 | Asm America, Inc. | In situ growth of oxide and silicon layers |
US6464780B1 (en) | 1998-01-27 | 2002-10-15 | Forschungszentrum Julich Gmbh | Method for the production of a monocrystalline layer on a substrate with a non-adapted lattice and component containing one or several such layers |
US6425951B1 (en) | 1998-02-18 | 2002-07-30 | International Business Machines Corporation | Advance integrated chemical vapor deposition (AICVD) for semiconductor |
JP2000021783A (en) | 1998-06-30 | 2000-01-21 | Toshiba Corp | Semiconductor device and its manufacture |
US7232487B2 (en) | 1998-07-15 | 2007-06-19 | Smithsonian Astrophysical Observatory | Method for making an epitaxial germanium temperature sensor |
US20040217845A1 (en) | 1998-07-15 | 2004-11-04 | Silver Eric H | Method for making an epitaxial germanium temperature sensor |
US6319782B1 (en) | 1998-09-10 | 2001-11-20 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method of fabricating the same |
US6537370B1 (en) | 1998-09-10 | 2003-03-25 | FRANCE TéLéCOM | Process for obtaining a layer of single-crystal germanium on a substrate of single-crystal silicon, and products obtained |
WO2000015885A1 (en) | 1998-09-10 | 2000-03-23 | France Telecom | Method for obtaining a monocrystalline germanium layer on a monocrystalline silicon substrate, and resulting products |
JP2002525255A (en) | 1998-09-10 | 2002-08-13 | フランス テレコム | Method for obtaining single crystal germanium layer on single crystal silicon substrate and product obtained thereby |
US6235568B1 (en) | 1999-01-22 | 2001-05-22 | Intel Corporation | Semiconductor device having deposited silicon regions and a method of fabrication |
JP2002539613A (en) | 1999-03-12 | 2002-11-19 | インターナショナル・ビジネス・マシーンズ・コーポレーション | High-speed Ge channel heterostructure for field effect devices |
US6350993B1 (en) | 1999-03-12 | 2002-02-26 | International Business Machines Corporation | High speed composite p-channel Si/SiGe heterostructure for field effect devices |
US6858502B2 (en) | 1999-03-12 | 2005-02-22 | International Business Machines Corporation | High speed composite p-channel Si/SiGe heterostructure for field effect devices |
JP2000286413A (en) | 1999-03-12 | 2000-10-13 | Internatl Business Mach Corp <Ibm> | Si/SiGe HETEROSTRUCTURE FOR HIGH-SPEED COMPOSITE P-CHANNEL FIELD EFFECT DEVICE |
WO2000054338A1 (en) | 1999-03-12 | 2000-09-14 | International Business Machines Corporation | High speed ge channel heterostructures for field effect devices |
US6346732B1 (en) | 1999-05-14 | 2002-02-12 | Kabushiki Kaisha Toshiba | Semiconductor device with oxide mediated epitaxial layer |
US6395621B1 (en) | 1999-05-14 | 2002-05-28 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device with oxide mediated epitaxial layer |
US20020034864A1 (en) | 1999-05-14 | 2002-03-21 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
US6635110B1 (en) | 1999-06-25 | 2003-10-21 | Massachusetts Institute Of Technology | Cyclic thermal anneal for dislocation reduction |
US6411548B1 (en) | 1999-07-13 | 2002-06-25 | Kabushiki Kaisha Toshiba | Semiconductor memory having transistors connected in series |
US20030230233A1 (en) | 1999-09-20 | 2003-12-18 | Fitzgerald Eugene A. | Method of producing high quality relaxed silicon germanium layers |
US6373112B1 (en) | 1999-12-02 | 2002-04-16 | Intel Corporation | Polysilicon-germanium MOSFET gate electrodes |
WO2001041544A2 (en) | 1999-12-11 | 2001-06-14 | Asm America, Inc. | Deposition of gate stacks including silicon germanium layers |
US6633066B1 (en) | 2000-01-07 | 2003-10-14 | Samsung Electronics Co., Ltd. | CMOS integrated circuit devices and substrates having unstrained silicon active layers |
US6645836B2 (en) | 2000-03-27 | 2003-11-11 | Matsushita Electric Industrial Co., Ltd. | Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbon |
US6555839B2 (en) | 2000-05-26 | 2003-04-29 | Amberwave Systems Corporation | Buried channel strained silicon FET using a supply layer created through ion implantation |
US6461945B1 (en) | 2000-06-22 | 2002-10-08 | Advanced Micro Devices, Inc. | Solid phase epitaxy process for manufacturing transistors having silicon/germanium channel regions |
US6592942B1 (en) | 2000-07-07 | 2003-07-15 | Asm International N.V. | Method for vapour deposition of a film onto a substrate |
US6525338B2 (en) | 2000-08-01 | 2003-02-25 | Mitsubishi Materials Corporation | Semiconductor substrate, field effect transistor, method of forming SiGe layer and method of forming strained Si layer using same, and method of manufacturing field effect transistor |
US6713326B2 (en) | 2000-08-16 | 2004-03-30 | Masachusetts Institute Of Technology | Process for producing semiconductor article using graded epitaxial growth |
US6573126B2 (en) | 2000-08-16 | 2003-06-03 | Massachusetts Institute Of Technology | Process for producing semiconductor article using graded epitaxial growth |
US6995076B2 (en) | 2000-09-05 | 2006-02-07 | The Regents Of The University Of California | Relaxed SiGe films by surfactant mediation |
US6562736B2 (en) | 2000-09-13 | 2003-05-13 | Sony Corporation | Manufacturing method for semiconductor device |
US20040137167A1 (en) | 2000-11-22 | 2004-07-15 | Tue Nguyen | Plasma enhanced pulsed layer deposition |
US6649980B2 (en) | 2000-12-11 | 2003-11-18 | Sony Corporation | Semiconductor device with MOS transistors sharing electrode |
US6455871B1 (en) | 2000-12-27 | 2002-09-24 | Electronics And Telecommunications Research Institute | SiGe MODFET with a metal-oxide film and method for fabricating the same |
US6821825B2 (en) | 2001-02-12 | 2004-11-23 | Asm America, Inc. | Process for deposition of semiconductor films |
US6900115B2 (en) | 2001-02-12 | 2005-05-31 | Asm America, Inc. | Deposition over mixed substrates |
US20030082300A1 (en) | 2001-02-12 | 2003-05-01 | Todd Michael A. | Improved Process for Deposition of Semiconductor Films |
US6958253B2 (en) | 2001-02-12 | 2005-10-25 | Asm America, Inc. | Process for deposition of semiconductor films |
US7026219B2 (en) | 2001-02-12 | 2006-04-11 | Asm America, Inc. | Integration of high k gate dielectric |
US20020173130A1 (en) | 2001-02-12 | 2002-11-21 | Pomerede Christophe F. | Integration of High K Gate Dielectric |
US6620743B2 (en) | 2001-03-26 | 2003-09-16 | Asm America, Inc. | Stable, oxide-free silicon surface preparation |
US6482705B1 (en) | 2001-04-03 | 2002-11-19 | Advanced Micro Devices, Inc. | Method of fabricating a semiconductor device having a MOSFET with an amorphous SiGe gate electrode and an elevated crystalline SiGe source/drain structure and a device thereby formed |
US20020173104A1 (en) | 2001-05-17 | 2002-11-21 | Chang Kent Kuohua | Method for preventing gate depletion effects of MOS transistor |
US6770134B2 (en) | 2001-05-24 | 2004-08-03 | Applied Materials, Inc. | Method for fabricating waveguides |
WO2002097864A2 (en) | 2001-05-30 | 2002-12-05 | Asm America, Inc | Low temperature load and bake |
US7108748B2 (en) | 2001-05-30 | 2006-09-19 | Asm America, Inc. | Low temperature load and bake |
US20030036268A1 (en) | 2001-05-30 | 2003-02-20 | Brabant Paul D. | Low temperature load and bake |
US6855649B2 (en) | 2001-06-12 | 2005-02-15 | International Business Machines Corporation | Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing |
US6844213B2 (en) | 2001-06-14 | 2005-01-18 | Integrated Sensing Systems | Process of forming a microneedle and microneedle formed thereby |
JP2003023146A (en) | 2001-07-06 | 2003-01-24 | Mitsubishi Materials Silicon Corp | SEMICONDUCTOR SUBSTRATE, FIELD EFFECT TRANSISTOR, FORMING METHOD OF SiGe LAYER AND FORMING METHOD OF DISTORTED Si LAYER USING THE SAME, AND MANUFACTURING METHOD OF FIELD EFFECT TRANSISTOR |
US20030045063A1 (en) | 2001-09-03 | 2003-03-06 | Hitachi, Ltd. | Semiconductor device and method for manufacturing the same |
US6905972B2 (en) | 2001-09-03 | 2005-06-14 | Renesas Technology Corporation | Semiconductor device and method for manufacturing the same |
US6960537B2 (en) | 2001-10-02 | 2005-11-01 | Asm America, Inc. | Incorporation of nitrogen into high k dielectric film |
US20030080394A1 (en) | 2001-10-31 | 2003-05-01 | Babcock Jeffrey A. | Control of dopant diffusion from polysilicon emitters in bipolar integrated circuits |
US6875279B2 (en) | 2001-11-16 | 2005-04-05 | International Business Machines Corporation | Single reactor, multi-pressure chemical vapor deposition for semiconductor devices |
US20030162348A1 (en) | 2001-11-30 | 2003-08-28 | Taiwan Semiconductor Manufacturing Company | Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layer |
US20030124818A1 (en) | 2001-12-28 | 2003-07-03 | Applied Materials, Inc. | Method and apparatus for forming silicon containing films |
US20030139000A1 (en) | 2002-01-23 | 2003-07-24 | International Business Machines Corporation | Method of creating high-quality relaxed SiGe-on-insulator for strained Si CMOS applications |
US20030143783A1 (en) | 2002-01-31 | 2003-07-31 | Maa Jer-Shen | Method to form relaxed SiGe layer with high Ge content |
US20030153161A1 (en) | 2002-02-11 | 2003-08-14 | Chu Jack O. | Strained si based layer made by uhv-cvd, and devices therein |
JP2005518093A (en) | 2002-02-11 | 2005-06-16 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Strained Si-based layer produced by UHV-CVD and device inside the same |
WO2003069658A2 (en) | 2002-02-11 | 2003-08-21 | International Business Machines Corporation | Strained si based layer made by uhv-cvd, and devices therein |
US20030157787A1 (en) | 2002-02-21 | 2003-08-21 | Anand Murthy | Method of forming a germanium film on a semiconductor substrate that includes the formation of a graded silicon-germanium buffer layer prior to the formation of a germanium layer |
US20030207127A1 (en) | 2002-02-21 | 2003-11-06 | Anand Murthy | Method of forming a germanium film on a semiconductor substrate that includes the formation of a graded silicon-germanium buffer layer prior to the formation of a germanium layer |
US6723622B2 (en) | 2002-02-21 | 2004-04-20 | Intel Corporation | Method of forming a germanium film on a semiconductor substrate that includes the formation of a graded silicon-germanium buffer layer prior to the formation of a germanium layer |
US6864520B2 (en) | 2002-04-04 | 2005-03-08 | International Business Machines Corporation | Germanium field effect transistor and method of fabricating the same |
US20030190791A1 (en) | 2002-04-04 | 2003-10-09 | International Business Machines Corporation | Germanium field effect transistor and method of fabricating the same |
US20040097022A1 (en) | 2002-05-07 | 2004-05-20 | Werkhoven Christiaan J. | Silicon-on-insulator structures and methods |
US7452757B2 (en) | 2002-05-07 | 2008-11-18 | Asm America, Inc. | Silicon-on-insulator structures and methods |
US6812495B2 (en) | 2002-06-19 | 2004-11-02 | Massachusetts Institute Of Technology | Ge photodetectors |
US20030235931A1 (en) | 2002-06-19 | 2003-12-25 | Kazumi Wada | Ge photodetectors |
US6887773B2 (en) | 2002-06-19 | 2005-05-03 | Luxtera, Inc. | Methods of incorporating germanium within CMOS process |
US20040157409A1 (en) | 2002-07-09 | 2004-08-12 | Bruno Ghyselen | Transfer of a thin layer from a wafer comprising a buffer layer |
US6953736B2 (en) | 2002-07-09 | 2005-10-11 | S.O.I.Tec Silicon On Insulator Technologies S.A. | Process for transferring a layer of strained semiconductor material |
US20040075105A1 (en) | 2002-08-23 | 2004-04-22 | Amberwave Systems Corporation | Semiconductor heterostructures having reduced dislocation pile-ups and related methods |
US20040087117A1 (en) | 2002-08-23 | 2004-05-06 | Amberwave Systems Corporation | Semiconductor heterostructures and related methods |
US7049627B2 (en) | 2002-08-23 | 2006-05-23 | Amberwave Systems Corporation | Semiconductor heterostructures and related methods |
JP2005536876A (en) | 2002-08-23 | 2005-12-02 | アンバーウェーブ システムズ コーポレイション | Semiconductor heterostructures with reduced dislocation pileup and related methods |
US7357838B2 (en) | 2002-08-27 | 2008-04-15 | Taiwan Semiconductor Manufacturing Company | Relaxed silicon germanium substrate with low defect density |
JP2004179452A (en) | 2002-11-28 | 2004-06-24 | Shin Etsu Handotai Co Ltd | Hetero epitaxial wafer |
US20060057825A1 (en) | 2002-12-18 | 2006-03-16 | Agere Systems Inc. | Semiconductor devices with reduced active region defects and unique contacting schemes |
US20050150447A1 (en) | 2003-01-07 | 2005-07-14 | Bruno Ghyselen | Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereof |
US20040151845A1 (en) | 2003-02-04 | 2004-08-05 | Tue Nguyen | Nanolayer deposition process |
US7022593B2 (en) | 2003-03-12 | 2006-04-04 | Asm America, Inc. | SiGe rectification process |
US20040219735A1 (en) | 2003-03-13 | 2004-11-04 | Brabant Paul D. | Epitaxial semiconductor deposition methods and structures |
US7238595B2 (en) | 2003-03-13 | 2007-07-03 | Asm America, Inc. | Epitaxial semiconductor deposition methods and structures |
US7682947B2 (en) | 2003-03-13 | 2010-03-23 | Asm America, Inc. | Epitaxial semiconductor deposition methods and structures |
US20100006024A1 (en) | 2003-03-13 | 2010-01-14 | Asm America, Inc. | Epitaxial semiconductor deposition methods and structures |
US7115521B2 (en) | 2003-03-13 | 2006-10-03 | Asm America, Inc. | Epitaxial semiconductor deposition methods and structures |
US7402504B2 (en) | 2003-03-13 | 2008-07-22 | Asm America, Inc. | Epitaxial semiconductor deposition methods and structures |
US20040178406A1 (en) | 2003-03-15 | 2004-09-16 | Chu Jack Oon | Dual strain-state SiGe layers for microelectronics |
US20040192002A1 (en) | 2003-03-31 | 2004-09-30 | Ravindra Soman | Method for fabricating a heterojunction bipolar transistor |
US20040197945A1 (en) | 2003-04-05 | 2004-10-07 | Rohm And Haas Electronic Materials L.L.C. | Germanium compounds |
US6833294B1 (en) | 2003-06-26 | 2004-12-21 | Rj Mears, Llc | Method for making semiconductor device including band-engineered superlattice |
US6830964B1 (en) | 2003-06-26 | 2004-12-14 | Rj Mears, Llc | Method for making semiconductor device including band-engineered superlattice |
US20050054175A1 (en) | 2003-07-23 | 2005-03-10 | Matthias Bauer | Deposition of silicon germanium on silicon-on-insulator structures and bulk substrates |
US20050051795A1 (en) | 2003-07-30 | 2005-03-10 | Chantal Arena | Epitaxial growth of relaxed silicon germanium layers |
US20050067377A1 (en) | 2003-09-25 | 2005-03-31 | Ryan Lei | Germanium-on-insulator fabrication utilizing wafer bonding |
US7132338B2 (en) | 2003-10-10 | 2006-11-07 | Applied Materials, Inc. | Methods to fabricate MOSFET devices using selective deposition process |
US20050079692A1 (en) | 2003-10-10 | 2005-04-14 | Applied Materials, Inc. | Methods to fabricate MOSFET devices using selective deposition process |
US20050081787A1 (en) | 2003-10-15 | 2005-04-21 | Ki-Vin Im | Apparatus and method for supplying a source, and method of depositing an atomic layer using the same |
US7390725B2 (en) | 2004-01-12 | 2008-06-24 | Sharp Laboratories Of America, Inc. | Strained silicon on insulator from film transfer and relaxation by hydrogen implantation |
US20050170577A1 (en) | 2004-01-30 | 2005-08-04 | Taiwan Semiconductor Manufacturing Co., Ltd | Strained silicon layer fabrication with reduced dislocation defect density |
US7479443B2 (en) | 2004-02-27 | 2009-01-20 | Asm America Inc. | Germanium deposition |
US20050191826A1 (en) | 2004-02-27 | 2005-09-01 | Matthia Bauer | Germanium deposition |
US7329593B2 (en) | 2004-02-27 | 2008-02-12 | Asm America, Inc. | Germanium deposition |
US20050192193A1 (en) | 2004-03-01 | 2005-09-01 | Korzenski Michael B. | Enhancement of silicon-containing particulate material removal using supercritical fluid-based compositions |
US20050266700A1 (en) | 2004-05-05 | 2005-12-01 | Jursich Gregory M | Codeposition of hafnium-germanium oxides on substrates used in or for semiconductor devices |
US7312165B2 (en) | 2004-05-05 | 2007-12-25 | Jursich Gregory M | Codeposition of hafnium-germanium oxides on substrates used in or for semiconductor devices |
US20050277260A1 (en) | 2004-06-14 | 2005-12-15 | Cohen Guy M | Mixed orientation and mixed material semiconductor-on-insulator wafer |
US20070134886A1 (en) | 2004-06-22 | 2007-06-14 | Texas Instruments Incorporated | Methods and systems to mitigate etch stop clipping for shallow trench isolation fabrication |
US20070117335A1 (en) | 2004-09-02 | 2007-05-24 | Micron Technology, Inc. | Double-sided container capacitors using a sacrificial layer |
US20060138393A1 (en) | 2004-12-27 | 2006-06-29 | Samsung Electronics Co., Ltd. | Ge precursor, GST thin layer formed using the same, phase-change memory device including the GST thin layer, and method of manufacturing the GST thin layer |
EP1681711A1 (en) | 2005-01-05 | 2006-07-19 | Siltronic AG | Semiconductor wafer with a silicon-germanium layer and process for its manufacture |
US20060145188A1 (en) | 2005-01-05 | 2006-07-06 | Siltronic Ag | Semiconductor wafer having a silicon-germanium layer, and method for its production |
JP2006191112A (en) | 2005-01-05 | 2006-07-20 | Siltronic Ag | Semiconductor wafer equipped with silicon-germanium layer, and manufacturing method therefor |
US20060199357A1 (en) | 2005-03-07 | 2006-09-07 | Wan Yuet M | High stress nitride film and method for formation thereof |
US20060216417A1 (en) | 2005-03-10 | 2006-09-28 | Todd Michael A | System for control of gas injectors |
US20060211230A1 (en) | 2005-03-21 | 2006-09-21 | Christophe Figuet | Laminated layer structure and method for forming the same |
US7387953B2 (en) | 2005-03-21 | 2008-06-17 | S.O.I.Tec Silicon On Insulator Technologies | Laminated layer structure and method for forming the same |
US20070155138A1 (en) | 2005-05-24 | 2007-07-05 | Pierre Tomasini | Apparatus and method for depositing silicon germanium films |
US7037856B1 (en) | 2005-06-10 | 2006-05-02 | Sharp Laboratories Of America, Inc. | Method of fabricating a low-defect strained epitaxial germanium film on silicon |
US20070044706A1 (en) | 2005-08-26 | 2007-03-01 | Samsung Electronics Co., Ltd. | Method of forming a crystalline structure and a method of manufacturing a semiconductor device |
US20070048956A1 (en) | 2005-08-30 | 2007-03-01 | Tokyo Electron Limited | Interrupted deposition process for selective deposition of Si-containing films |
US7772127B2 (en) | 2005-09-07 | 2010-08-10 | S.O.I.Tec Silicon On Insulator Technologies | Semiconductor heterostructure and method for forming same |
US20070051975A1 (en) | 2005-09-07 | 2007-03-08 | Christophe Figuet | Semiconductor heterostructure and method for forming same |
US20070117398A1 (en) | 2005-11-24 | 2007-05-24 | Mitsuhiro Okada | Film formation apparatus and method of using the same |
US7901968B2 (en) | 2006-03-23 | 2011-03-08 | Asm America, Inc. | Heteroepitaxial deposition over an oxidized surface |
US7785995B2 (en) | 2006-05-09 | 2010-08-31 | Asm America, Inc. | Semiconductor buffer structures |
US20070264801A1 (en) | 2006-05-09 | 2007-11-15 | Cody Nyles W | Semiconductor buffer structures |
US20120244688A1 (en) | 2006-06-07 | 2012-09-27 | Asm America, Inc. | Selective epitaxial formation of semiconductive films |
US7825401B2 (en) | 2006-07-24 | 2010-11-02 | Asm America, Inc. | Strained layers within semiconductor buffer structures |
US7608526B2 (en) | 2006-07-24 | 2009-10-27 | Asm America, Inc. | Strained layers within semiconductor buffer structures |
US20080017952A1 (en) | 2006-07-24 | 2008-01-24 | Asm America, Inc. | Strained layers within semiconductor buffer structures |
US20090305458A1 (en) | 2006-11-02 | 2009-12-10 | Advanced Technology Materials, Inc. | Antimony and germanium complexes useful for cvd/ald of metal thin films |
US8454928B2 (en) | 2007-09-17 | 2013-06-04 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Tellurium precursors for GST deposition |
US20090072271A1 (en) | 2007-09-18 | 2009-03-19 | Leonardo Gomez | EPITAXIAL GROWTH OF THIN SMOOTH GERMANIUM (Ge) ON SILICON (Si) UTILIZING AN INTERFACIAL SILICON GERMANIUM (SiGe) PULSE GROWTH METHOD |
US20130210217A1 (en) | 2008-01-28 | 2013-08-15 | Air Products And Chemicals, Inc. | Precursors for GST Films in ALD/CVD Processes |
US20090203197A1 (en) | 2008-02-08 | 2009-08-13 | Hiroji Hanawa | Novel method for conformal plasma immersed ion implantation assisted by atomic layer deposition |
WO2011027321A1 (en) | 2009-09-02 | 2011-03-10 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Dihalide germanium(ii) precursors for germanium-containing film depositions |
US20120231611A1 (en) | 2009-09-02 | 2012-09-13 | L'air Liquide Societe Anonyme Pour L'exploitation Des Procedes Georges Claude | Dihalide germanium(ii) precursors for germanium-containing film depositions |
US20110117732A1 (en) | 2009-11-17 | 2011-05-19 | Asm America, Inc. | Cyclical epitaxial deposition and etch |
US20120028454A1 (en) | 2010-04-15 | 2012-02-02 | Shankar Swaminathan | Plasma activated conformal dielectric film deposition |
US20120009802A1 (en) | 2010-04-15 | 2012-01-12 | Adrien Lavoie | Plasma activated conformal dielectric film deposition |
US20110256726A1 (en) | 2010-04-15 | 2011-10-20 | Adrien Lavoie | Plasma activated conformal film deposition |
US20110262660A1 (en) | 2010-04-22 | 2011-10-27 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Chalcogenide-containing precursors, methods of making, and methods of using the same for thin film deposition |
US20110315992A1 (en) | 2010-06-25 | 2011-12-29 | Applied Materials, Inc. | Plasma-enhanced chemical vapor deposition of crystalline germanium |
US20120028410A1 (en) | 2010-07-27 | 2012-02-02 | Micron Technology, Inc. | Methods of forming germanium-antimony-tellurium materials and a method of forming a semiconductor device structure including the same |
US20120247386A1 (en) | 2011-03-28 | 2012-10-04 | Applied Materials, Inc. | Method and apparatus for the selective deposition of epitaxial germanium stressor alloys |
US8623734B2 (en) | 2011-06-01 | 2014-01-07 | International Business Machines Corporation | Method to selectively grow phase change material inside a via hole |
US20130045374A1 (en) | 2011-08-17 | 2013-02-21 | National Applied Research Laboratories | Nano-laminated film with transparent conductive property and water-vapor resistance function and method thereof |
US20130233240A1 (en) | 2012-03-06 | 2013-09-12 | Asm America, Inc. | Methods and apparatuses for epitaxial films with high germanium content |
US20140065841A1 (en) | 2012-09-05 | 2014-03-06 | Asm Ip Holding B.V. | ATOMIC LAYER DEPOSITION OF GeO2 |
US20140120738A1 (en) | 2012-11-01 | 2014-05-01 | Asm Ip Holding B.V. | Method of depositing thin film |
Non-Patent Citations (97)
Title |
---|
"Physics of Thin Films", printed from http://www.uccs.edu/˜tchriste/courses/PHYS549/549lectures/film2.html (Feb. 22, 2000). |
Bauer et al., "Crystalline to Amorphous Phase Transition in Very Low Temperature Molecular Beam Epitaxy", Materials Science and Engineering B89:263-268 (2002). |
Bauer et al., "High Ge content photodetectors on thin SiGe buffers", Materials Science and Engineering B89:77-83 (2002). |
Bauer et al., "Relaxed SiGe buffers with thicknesses below 0.1 μm", Thin Solid Films 369:152-156 (2000). |
Bensahel et al., "Single-wafer processing of in-situ doped polycrystalline Si and Si1-xGex", Solid State Technology, pp. S5-S10 (Mar. 1998). |
Bolkhovityanov et al., "Artificial GeSi Substrates for Heteroepitaxy: Achievements and Problems," Semiconductors 37(5): 493-518 (2003). |
Cannon, D. et al., "Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications," Applied Physics Letters, vol. 84, No. 6, Feb. 9, 2004, pp. 906-908. |
Christiansen et al., "Strain Relaxation Mechanisms in He+-Implanted and Annealed Si1-xGex Layers on Si(001) Substrates", Material Research Society Symposium Proceedings 686:A1.6.1-A1.6.6 (2002). |
Chui et al., "Ultrathin high-k gate dielectric technology for germanium MOS applications", IEEE 60th Annual Device Research Conference (DRC) Digest, paper VII.B2, pp. 191-192 (2002). |
Colace et al., "Ge/Si(001) photodetector for near infrared light", Solid State Phenomena 54:55-58 (1997). |
Colace et al., "Metal-Ge-Si diodes for near-infrared light detection", Journal of Vacuum Science and Technology B 17:465 (1999). |
Colace et al., "Metal-semiconductor-metal near-infrared light detector based on epitaxial Ge/Si", Applied Physics Letters 72:3175-3177 (1998). |
Colace et al., "Metal-Ge—Si diodes for near-infrared light detection", Journal of Vacuum Science and Technology B 17:465 (1999). |
Colace, L. et al., "Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates," Applied Physics Letters, vol. 76, No. 10, Mar. 6, 2000, pp. 1231-1233. |
Colace, L. et al., "Ge-on-Si Approaches to the Detection of Near-Infrared Light," IEEE Journal of Quantum Electronics, vol. 35, No. 12, Dec. 1999, pp. 1843-1852. |
Currie et al., "Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing", Applied Physics Letters 72:1718-1720 (1998). |
Delhougne et al., "Development of a New Type of SiGe Thin Strain Relaxed Buffer Based on the Incorporation of a Carbon-Containing Layer", Applied Surface Science 224:91-94 (2004). |
Fama, S. et al., "High performance germanium-on-silicon detectors for optical communications," Applied Physics Letters, vol. 81, No. 4, Jul. 22, 2002, pp. 586-588. |
File History printed May 23, 2012 for U.S. Appl. No. 10/800,390, filed Mar. 12, 2004, entitled "Epitaxial Semiconductor Deposition Methods and Structures". |
File History printed May 23, 2012 for U.S. Appl. No. 10/993,024, filed Nov. 18, 2004, entitled "Epitaxial Semiconductor Deposition Methods and Structures". |
File History printed May 23, 2012 for U.S. Appl. No. 11/067,307, filed Feb. 25, 2005, entitled "Germanium Deposition". |
File History printed May 23, 2012 for U.S. Appl. No. 11/388,313, filed Mar. 23, 2006, entitled "Heteroepitaxial Deposition Over an Oxidized Surface". |
File History printed May 23, 2012 for U.S. Appl. No. 11/431,336, filed May 9, 2006, entitled "Semiconductor Buffer Structures". |
File History printed May 23, 2012 for U.S. Appl. No. 11/491,616, filed Jul. 24, 2006, entitled "Strained Layers Within Semiconductor Buffer Structures". |
File History printed May 23, 2012 for U.S. Appl. No. 11/506,320, filed Aug. 18, 2006, entitled "Epitaxial Semiconductor Deposition Methods and Structures". |
File History printed May 23, 2012 for U.S. Appl. No. 11/755,528, filed May 30, 2007, entitled "Epitaxial Semiconductor Deposition Methods and Structures". |
File History printed May 23, 2012 for U.S. Appl. No. 11/867,318, filed Oct. 4, 2007, entitled "Germanium Deposition". |
File History printed May 23, 2012 for U.S. Appl. No. 12/556,377, filed Sep. 9, 2009, entitled "Epitaxial Semiconductor Deposition Methods and Structures". |
File History printed May 23, 2012 for U.S. Appl. No. 12/562,029, filed Sep. 17, 2009, entitled "Strained Layers Within Semiconductor Buffer Structures". |
Fischetti et al., "Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys", Journal of Applied Physics 80:2234-2252 (1996). |
Fitzgerald et al., "Totally Relaxed Gex Si1-x Layers with Low Threading Dislocation Densities Grown on Si Substrates," Appl. Phys. Lett. 59(7): 811-813 (1991). |
Giovane et al., "Correlation between leakage current density and threading dislocation density in SiGe p-i-n diodes grown on relaxed graded buffer layers", Applied Physics Letters 78:541-543 (2001). |
Hackbarth et al., "Alternatives to Thick MBE-Grown Relaxed SiGe Buffers", Thin Solid Films 369:148-151 (2000). |
Hartmann et al., "Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3-1.55-μm photodetection", Journal of Applied Physics 95:5905-5913 (2004). |
Hartmann et al., "Reduced pressure—chemical vapor deposition of Ge thick layers on Si(001) for 1.3-1.55-μm photodetection", Journal of Applied Physics 95:5905-5913 (2004). |
Haynes et al., "Composition Dependence of Solid-Phase Epitaxy in Silicon-Germanium Alloys: Experiment and Theory", Physical Review B 51:7762-7771 (1995). |
Herzog et al., "Si/SiGe n-MODFETs on Thin SiGe Virtual Substrates Prepared by Means of He Implantation", IEEE Electron Device Letters, 23:485-487 (2002). |
Huang et al., "Electron and Hole Mobility Enhancement in Strained SOI by Wafer Bonding", IEEE Transactions on Electron Devices 49:1566-1571 (2002). |
Huang et al., "SiGe-on-Insulator Prepared by Wafer Bonding and Layer Transfer for High-Performance Field-Effect Transistors", Applied Physics Letters 78:1267-1269 (2001). |
Hull, R., "Metastable strained layer configurations in the SiGe/Si system," (1999) EMIS Datareviews, Series No. 24: Properties of SiGe and SiGe:C, edited by Erich Kasper et al., INSPEC (2000), Londonm, UK. |
International Preliminary Report on Patentability for International Application No. PCT/US2007/072252, dated Nov. 3, 2008. |
International Preliminary Report on Patentability for PCT/US2007/008879 dated Nov. 20, 2008. |
International Search Report and Written Opinion dated Feb. 6, 2015 in Application No. PCT/US2014/068387. |
International Search Report and Written Opinion for PCT Application No. PCT/US2007/072252 dated Dec. 19, 2007. |
International Search Report for International Application No. PCT/US04/07564 dated Apr. 6, 2005. |
International Search Report for PCT/US05/06150 dated Jun. 19, 2008. |
Isella et al., "Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices" Solid State Electronics, Elsevier Science Publishers, Barking, GB, vol. 48, No. 8, Aug. 2004 (Aug. 2008), pp. 1317-1323. |
Ishikawa et al., "Strain-induced band gap shrinkage in Ge grown on Si substrate," Applied Physics Letters, vol. 82, No. 12, Mar. 31, 2003, pp. 2044-2046. |
Jackson et al., "Gate-Self-Aligned p-Channel Germanium MISFET's", IEEE Electron Device Letters 12:605-607 (1991). |
Kamins et al., "Deposition of Three-Dimensional Germanium Islands on Si(001) by Chemical Vapor Deposition at Atmospheric and Reduced Pressures", J. Appl. Phys. 81:211-219 (1997). |
Kasper et al., "New virtual substrate concept for vertical MOS transistors", Thin Solid Films 336:319-322 (1998). |
Kasper, "Prospects of SiGe Heterodevices", Journal of Crystal Growth 150:921-925 (1995). |
Kutsukake et al., "Fabrication of SiGe-On-Insulator through Thermal Diffusion on Germanium on Si-on-Insulator Substrate", Jpn. J. Appl. Phys. 42:L232-L234 (2003). |
Langdo et al., "High quality Ge on Si by epitaxial necking", Applied Physics Letter, vol. 76, No. 25, pp. 3700-3702, Jun. 19, 2000. |
Lee et al., "Electron mobility characteristics of n-channel metal-oxide-semiconductor field-effect transistors fabricated on Ge-rich single- and dual-channel SiGe heterostructures", Journal of Applied Physics 95:1550-1555 (2004). |
Lee et al., "Growth of strained Si and strained Ge heterostructures on relaxed Si1-xGex by ultrahigh vacuum chemical vapor deposition," J. Vac. Sci. Technol. B 22(1) (Jan./Feb. 2004). |
Lee et al., "Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on Si1-xGex/Si virtual substrates", Applied Physics Letters 79:3344-3346 (2001). |
Lee et al., "Strained Si/strained Ge dual-channel heterostructures on Relaxed Si0.5Ge0.5 for symmetric mobility p-type and n-type metal-oxide-semiconductor field-effect transistors", Applied Physics Letters 83:4202-4204 (2003). |
Letertre et al., "Germanium-on-insulator (GeOI) structure realized by the Smart Cut™ technology", MRS Proceedings, vol. 809 (2004). |
Levinstein, Michael E., Rumyantsev, Sergey L, and Shur, Michael S., Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe, John Wiley & Sons, Inc., 149-187 (2011). |
Li, Q, et al., "Selective growth of Ge on Si(100) through vias of SiO2 nanotemplate using solid source molecular beam epitaxy," Applied Physics Letters, vol. 83, No. 24, Dec. 15, 2003, pp. 5032-5034. |
Liszkay et al., "Strain Relaxation Induced by He-Implantation at the Si¬¬1-xGex/Si(100) Interface Investigated by Positron Annihilation", Applied Surface Science 194:136-139 (2002). |
Liu, J. et al., "Silicidation-induced band gap shrinkage in Ge epitaxial films on Si," Applied Physics Letters, vol. 84, No. 5, Feb. 2, 2004, pp. 660-662. |
Liu, J. et al., "Silicidation—induced band gap shrinkage in Ge epitaxial films on Si," Applied Physics Letters, vol. 84, No. 5, Feb. 2, 2004, pp. 660-662. |
Luan et al., "High-quality Ge epilayers on Si with low threading-dislocation densities", Applied Physics Letters 75:2909-2911 (1999). |
Luysberg et al., "Effect of Helium Ion Implantation and Annealing on the Relaxation Behavior of Pseudomorphic Si1-xGex Buffer Layers on Si(100) Substrates", Journal of Applied Physics 92:4290-4295 (2002). |
Lyutovich et al., "Interaction between point defects and dislocations in SiGe", Solid State Phenomena 69-70:179-184 (1999). |
Lyutovich et al., "Relaxed SiGe buffer layer growth with point defect injection", Materials Science and Engineering B71:14-19 (2000). |
Lyutovich et al., "Thin SiGe buffers with high Ge content for n-MOSFETs", Materials Science and Engineering B89:341-345 (2002). |
Masini, G. et al.; "High-Performance p-i-n Ge on Si Photodetectors for the Near Infrared: From Model to Demonstration," IEEE Transactions of Electron Devices, vol. 48, No. 6, Jun. 2001, pp. 1092-1096. |
Medeiros-Ribeiro et al., "Equilibrium Size Distributions of Clusters During Strained Epitaxial Growth", Materials Science and Engineering B67:31-38 (1999). |
Nakamura et al., "InGaN/GaN/A1GaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices", Jap. J. Appl. Phys., vol. 36, No. 12A, Part 2, p. L1568-L1571 (1997). |
Nam et al., "Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy", Phys. Lett, vol. 71, No. 18, p. 2638 (1997). |
Ni et al., "X-ray reciprocal space mapping studies of strain relaxation in thin SiGe layers (≤100 nm) using a low temperature growth step", Journal of Crystal Growth 227-228:756-760 (2001). |
Obata et al., "Structural Characterization of Si0.7Ge0.3 Layers Grown on Si(001) Substrates by Molecular Beam Epitaxy," J. Appl. Phys. 81(1): 199-204 (1997). |
Osten et al., "Relaxed Si1-xGex-Si1-x-yGexCy Buffer Structures with Low Threading Dislocation Density", Applied Physics Letters 70:2813-2815 (1997). |
Pending U.S. Appl. No. 11/146,572 entitled: Laminated Layer Structure and Method for Forming the Same, filed Jun. 6, 2005 by Christophe Figuet. |
Pending U.S. Appl. No. 11/267,494 entitled: Semiconductor Heterostructure and Method for Forming a Semiconductor Heterostructure, filed Mar. 11, 2005 by Christophe Figuet and Mark Kennard. |
Perego et al, "Fabrication of GeO2 layers using a divalent Ge precursor," Applied Physics Letters 90, 2007. |
Presting et al., "Buffer Concepts of Ultrathin Simgen Superlattices" Thin Solid Films, Elsevier-Sequoia S.A. Lausanne, CH, vol. 222, No. ½, Dec. 20, 1992 (Dec. 20, 1992), pp. 215-220. |
Profijt et al., "Plasma-assisted atomic layer deposition: basics, opportunities and challenges", J. Vac. Sci. Technol. A, vol. 29, No. 5, pp. 050801-1 050801-26. |
Reinking et al., "Ge p-MOSFETs compatible with Si CMOS-technology", Proceedings of the 29th ESSDERC 99:300-303 (1999). |
Samavedam et al., "High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers", Applied Physics Letters 73:2125-2127 (1998). |
Schöllhorn et al., "Coalescence of germanium islands on silicon", Thin Solid Films 336:109-111 (1998). |
Shang et al., "Electrical characterization of germanium p-channel MOSFETs", IEEE Electron Device Letters 24:242-244 (2003). |
Singapore Search Report dated Jun. 16, 2009, received in Singapore Application No. 200809179-5, filed Jun. 27, 2007. 572VSG. |
Singapore Written Opinion dated Jun. 16, 2009, received in Singapore Application No. 200809179-5, filed Jun. 27, 2007. 572VSG. |
Sugii et al., "SiGe-on-Insulator Substrate Fabricated by Melt Solidification for a Strained-Silicon Complementary Metal-Oxide-Semiconductor", J. Vac. Sci. Technol. B20(5):1891-1896 (2002). |
Sugiyama et al., "Formation of Strained-Silicon Layer on Thin Relaxed-SiGe/SiO2/Si Structure Using SIMOX Technology", Thin Solid Films 369:199-202 (2000). |
Taiwanese Office Action dated Apr. 30, 2010 for Taiwanese Patent Application No. 093106618. |
Teichert et al., "Interplay of Dislocation Network and Island Arrangement in SiGe Films Grown on Si(001)", Thin Solid Films 380:25-28 (2000). |
Thomas et al., "Structural characterization of thick, high-quality epitaxial Ge on Si substrates grown by low-energy plasma-enhanced chemical vapor deposition", Journal of Electronic Materials 32:976-980 (2003). |
Trinkaus et al., "Strain Relaxation Mechanism for Hydrogen-Implanted Si1-xGex/Si(100)Heterostructures", Applied Physics Letters 76:3552-3554 (2000). |
Vescan et al., "Relaxation Mechanism of Low Temperature SiGe-Si(100) Buffer Layers", ICSI3, p. 141 (Mar. 2003). |
Vescan et al., "Relaxation Mechanism of Low Temperature SiGe—Si(100) Buffer Layers", ICSI3, p. 141 (Mar. 2003). |
Wolf, "Silicon Processing for the VLSI Era", vol. 1: Process Technology, pp. 198 & 519-520 (1986). |
Yamamoto et al., "Dislocation Structures and Strain-Relaxation in SiGe Buffer Layers on Si (0 0 1) Substrates with an Ultra-Thin Ge Interlayer," Appl. Surface Sci. 224: 108-112 (2004). |
Also Published As
Publication number | Publication date |
---|---|
TW201418506A (en) | 2014-05-16 |
US20200266053A1 (en) | 2020-08-20 |
US20140065841A1 (en) | 2014-03-06 |
US20160155635A1 (en) | 2016-06-02 |
KR102104390B1 (en) | 2020-04-27 |
US10553423B2 (en) | 2020-02-04 |
TWI596227B (en) | 2017-08-21 |
KR20140031811A (en) | 2014-03-13 |
KR102192161B1 (en) | 2020-12-17 |
US9171715B2 (en) | 2015-10-27 |
KR20190077274A (en) | 2019-07-03 |
KR101994305B1 (en) | 2019-06-28 |
TW201734249A (en) | 2017-10-01 |
TWI638061B (en) | 2018-10-11 |
KR20200043960A (en) | 2020-04-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10811249B2 (en) | Atomic layer deposition of GeO2 | |
US11047040B2 (en) | Dual selective deposition | |
US10553482B2 (en) | Selective deposition of aluminum and nitrogen containing material | |
US9368352B2 (en) | Methods for forming doped silicon oxide thin films | |
US9330899B2 (en) | Method of depositing thin film | |
US10741388B2 (en) | Cyclical deposition of germanium | |
US11769664B2 (en) | Methods for depositing a hafnium lanthanum oxide film on a substrate by a cyclical deposition process in a reaction chamber | |
US9981286B2 (en) | Selective formation of metal silicides | |
US7947597B2 (en) | Methods of titanium deposition | |
KR20180093832A (en) | Selective deposition of aluminum and nitrogen containing material |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FEPP | Fee payment procedure |
Free format text: ENTITY STATUS SET TO UNDISCOUNTED (ORIGINAL EVENT CODE: BIG.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
AS | Assignment |
Owner name: ASM IP HOLDING B.V., NETHERLANDS Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MATERO, RAIJA H.;REEL/FRAME:051645/0422 Effective date: 20130313 |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NOTICE OF ALLOWANCE MAILED -- APPLICATION RECEIVED IN OFFICE OF PUBLICATIONS |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Year of fee payment: 4 |