US10199916B2 - Resistor emulation and gate boost - Google Patents

Resistor emulation and gate boost Download PDF

Info

Publication number
US10199916B2
US10199916B2 US15/515,982 US201515515982A US10199916B2 US 10199916 B2 US10199916 B2 US 10199916B2 US 201515515982 A US201515515982 A US 201515515982A US 10199916 B2 US10199916 B2 US 10199916B2
Authority
US
United States
Prior art keywords
power switch
current
voltage
circuit
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
US15/515,982
Other languages
English (en)
Other versions
US20170302151A1 (en
Inventor
Mark Snook
Robert John Leedham
Robin LYLE
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Maschinenfabrik Reinhausen GmbH
Original Assignee
Maschinenfabrik Reinhausen GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB1420038.0A external-priority patent/GB2532215A/en
Priority claimed from GB1420037.2A external-priority patent/GB2532214A/en
Application filed by Maschinenfabrik Reinhausen GmbH filed Critical Maschinenfabrik Reinhausen GmbH
Assigned to MASCHINENFABRIK REINHAUSEN GMBH reassignment MASCHINENFABRIK REINHAUSEN GMBH ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LEEDHAM, ROBERT JOHN, SNOOK, Mark
Assigned to MASCHINENFABRIK REINHAUSEN GMBH reassignment MASCHINENFABRIK REINHAUSEN GMBH ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LYLE, Robin, LEEDHAM, ROBERT JOHN, SNOOK, Mark
Publication of US20170302151A1 publication Critical patent/US20170302151A1/en
Application granted granted Critical
Publication of US10199916B2 publication Critical patent/US10199916B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/0048Circuits or arrangements for reducing losses
    • H02M1/0054Transistor switching losses
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04Modifications for accelerating switching
    • H03K17/0406Modifications for accelerating switching in composite switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04Modifications for accelerating switching
    • H03K17/042Modifications for accelerating switching by feedback from the output circuit to the control circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06Modifications for ensuring a fully conducting state
    • H03K17/063Modifications for ensuring a fully conducting state in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • H03K17/161Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • H03K17/168Modifications for eliminating interference voltages or currents in composite switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01Shaping pulses
    • H03K5/08Shaping pulses by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/0003Details of control, feedback or regulation circuits
    • H02M1/0009Devices or circuits for detecting current in a converter
    • H02M2001/0009
    • H02M2001/0054
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
    • Y02B70/1491

Definitions

  • the output impedance of the power switch driver may thus not be determined by an output component, e.g., fixed resistors such as Ron or Roff as shown in the arrangement of FIG. 1 , but may be at least partially determined by component(s) such as resistor(s) on an input stage of the driver. Indeed, such fixed output resistors may not be necessary.
  • power dissipation may thus be reduced and/or thermal constraints relating for example to board layout and/or number or choice of components, may thus be mitigated.
  • threshold current may for example effectively allow high emulated resistor at low load.
  • the turn-on detector may be in the output line to the load and/or coupled to a main conduction terminal, e.g., collector or emitter, of the power switch.
  • the turn-on detector may be a component of the driver, e.g., provided in driver module.
  • the indication of the at least start of a turn-on period may be provided for example by the turn-on detector outputting an active signal (e.g., digital “1”) while the rate of change of current remains above a threshold level.
  • the increasing current through the power switch(es) may be detected by detecting when the current has a rate of change above a threshold rate of change value.
  • the power converter configured to perform said reversal when the clamp comparator indicates that the power switch variable indicator goes beyond or exceeds the clamp value during an OFF period of the power switch.
  • Such an OFF period may comprise a turn-off period and/or a fully off period of the power switch. (Any reference to exceeding a clamp value may refer to magnitude of the power switch variable indicator exceeding magnitude of the clamp value).
  • the power switch driver is an adaptive drive.
  • the power switch driver may be as defined above for the first aspect, wherein the circuit variable comprises the controllable output resistance and the power switch driver is configured to adjust resistance of the at least one resistor to perform at least one of said increase and decrease of the circuit variable.
  • a power switch driver for driving a control terminal of a power switch to drive a load
  • the power switch driver comprising: a controllable voltage source to provide a control terminal reference voltage; a voltage control circuit for controlling voltage on the control terminal of the power switch according to the control terminal reference voltage, the voltage control circuit configured to provide an output signal to vary the voltage on the control terminal; and a feedback circuit to generate a signal indicating a rate of change of at least one of a current or voltage of the power switch and to, in response to said signal indicating a reduction of impedance of an output circuit of the power switch driver, control the controllable voltage source to reduce the control terminal reference voltage, said reduction to reduce the controlled voltage.
  • FIG. 7 shows example resistor selection
  • FIG. 20 shows an embodiment of a gate boost method.
  • Optional coupling switch SW 1 may allow the resistor emulation function to be turned off (base of ⁇ 1 open-circuit), operated as a constant current sink (base of ⁇ 1 connected to ground) or enabled.
  • a current drive may be preferable to a voltage source and resistance (resistive drive) under certain conditions described later.
  • power dissipation may be constrained to the output stage making it easier to manage for a wide range of emulated resistors.
  • improved thermal performance may be achieved.
  • the current in the load (for example a motor) may be measured and fed back to a control unit.
  • the DC link voltage may also be monitored and preferably regulated to ensure it does not rise above the maximum blocking voltage of the power switches.
  • One method to measure the load current without the need for additional circuits is to measure the time in certain phases.
  • the time spent in phase 2, or 2 and 3 may give an indication of the magnitude of the load current.
  • the time spent in phase 8 may similarly indicate the magnitude of the load current. This is particularly true if the di/dt is constant or changing little with load.
  • a system clock of 100 MHz can measure, using a counter, the time the IGBT spends in each phase to an accuracy of 10 ns.
  • An example time in phase 2 or 8 might be 0 to 500 ns, which corresponds to a count value of 0 to 50. In this case it may be appropriate to select one of 5 different resistors for counts of 0 to 10, 11 to 20, 21 to 30, 31 to 40, and 41+ for example.
  • the voltage across R 1 is measured and compared by the clamp comparator to a reference voltage (Vclamp).
  • Vclamp a reference voltage
  • the R 1 voltage is used as an indicator of a power switch variable in the form of the emitter-collector voltage of the power switch U 2 . If the voltage across R 1 exceeds a clamp value Vclamp, the output of the comparator is a logic high (1) and if less than Vclamp the output is a logic low (0).
  • the series impedances have a ratio such as 500:1 for, e.g., R 1 C 1 :R 2 C2, over the required bandwidth from DC to a high frequency beyond which the ratio may roll increase of decrease or may roll off/up.
  • a feedback control scheme based on monitoring the DC link is proposed. This could be implemented in a central controller or the gate drive.
  • control terminal e.g., gate
  • two power supply rails e.g. +15 V and +18 V
  • this may require additional power supply smoothing capacitors and/or a more complex DC-DC converter.
  • capacitance in the converter and/or driver may significantly slow down switching between rails.
  • Example advantages that may be achievable by any one or more such embodiment are, inter alia, any one or more of the following:
  • E17 Power converter comprising the power switch driver of E16.
  • a power switch driver for driving a control terminal of a power switch to drive a load having a negative feedback circuit to control current delivered to the control terminal, the negative feedback circuit comprising:

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Power Conversion In General (AREA)
  • Inverter Devices (AREA)
  • Electronic Switches (AREA)
US15/515,982 2014-11-11 2015-11-09 Resistor emulation and gate boost Active US10199916B2 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
GB1420038.0A GB2532215A (en) 2014-11-11 2014-11-11 Gate boost
GB1420037.2 2014-11-11
GB1420038.0 2014-11-11
GB1420037.2A GB2532214A (en) 2014-11-11 2014-11-11 Resistor emulation
PCT/EP2015/076003 WO2016075056A1 (en) 2014-11-11 2015-11-09 Resistor emulation and gate boost

Publications (2)

Publication Number Publication Date
US20170302151A1 US20170302151A1 (en) 2017-10-19
US10199916B2 true US10199916B2 (en) 2019-02-05

Family

ID=54476980

Family Applications (1)

Application Number Title Priority Date Filing Date
US15/515,982 Active US10199916B2 (en) 2014-11-11 2015-11-09 Resistor emulation and gate boost

Country Status (6)

Country Link
US (1) US10199916B2 (zh)
EP (1) EP3219010B1 (zh)
JP (1) JP2017534237A (zh)
KR (1) KR102404605B1 (zh)
CN (1) CN107112887B (zh)
WO (1) WO2016075056A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11462989B2 (en) * 2019-11-22 2022-10-04 Lg Electronics Inc. Power converting apparatus, and vehicle including the same

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9950282B2 (en) * 2012-03-15 2018-04-24 Flodesign Sonics, Inc. Electronic configuration and control for acoustic standing wave generation
JP6610468B2 (ja) * 2016-08-26 2019-11-27 株式会社デンソー 半導体装置
US10802053B2 (en) * 2016-09-22 2020-10-13 Infineon Technologies Ag Configuration of integrated current flow sensor
US10461737B2 (en) * 2016-10-24 2019-10-29 Infineon Technologies Austria Ag Configurable clamp circuit
JP6867780B2 (ja) * 2016-10-28 2021-05-12 矢崎総業株式会社 半導体スイッチ制御装置
US10477626B2 (en) 2016-11-23 2019-11-12 Alpha And Omega Semiconductor (Cayman) Ltd. Hard switching disable for switching power device
US10411692B2 (en) * 2016-11-23 2019-09-10 Alpha And Omega Semiconductor Incorporated Active clamp overvoltage protection for switching power device
EP3358738A1 (de) * 2017-02-03 2018-08-08 Siemens Aktiengesellschaft Leistungshalbleiterschaltung
US10476494B2 (en) 2017-03-20 2019-11-12 Alpha And Omega Semiconductor (Cayman) Ltd. Intelligent power modules for resonant converters
EP3503365B1 (de) * 2017-12-22 2020-06-10 GE Energy Power Conversion Technology Limited Verfahren und einrichtung zur ansteuerung von mosfet-schaltmodulen
IT201800001967A1 (it) * 2018-01-26 2019-07-26 System Spa Amplificatore per il pilotaggio di un carico capacitivo
EP3521786B8 (en) * 2018-01-31 2020-11-18 ABB Power Grids Switzerland AG Wound electrical component with printed electronics sensor
CN110350812A (zh) * 2018-04-08 2019-10-18 佛山科学技术学院 一种用于ups的逆变器模块
FR3082676B1 (fr) * 2018-06-19 2021-07-23 Alstom Transp Tech Convertisseur d'energie electrique, chaine de traction comportant un tel convertisseur et vehicule electrique de transport associe
FR3083397B1 (fr) * 2018-06-28 2020-08-21 Valeo Equip Electr Moteur Systeme de commande d'un interrupteur et bras de commutation
CN108519540B (zh) * 2018-06-29 2024-06-18 东莞市李群自动化技术有限公司 一种断线检测电路
US11569727B2 (en) * 2018-07-17 2023-01-31 Mitsubishi Electric Corporation Drive circuit and power conversion device
EP3618278A1 (de) * 2018-08-28 2020-03-04 Siemens Aktiengesellschaft Betreiben eines bipolartransistors mit isolierter gate-elektrode
US10879652B2 (en) * 2018-09-21 2020-12-29 Infineon Technologies Ag Auxiliary power outlet with load inductance measurement system
US20200127454A1 (en) * 2018-10-22 2020-04-23 David L. Whitney Voltage clamp
JP7132099B2 (ja) * 2018-11-20 2022-09-06 株式会社日立インダストリアルプロダクツ 電力変換装置
US10707767B2 (en) * 2018-12-04 2020-07-07 Infineon Technologies Austria Ag Two-level switch driver for preventing avalanche breakdown for a synchronous rectification switch in a power converter operating in a low-power burst mode
CN109618467B (zh) * 2019-01-21 2024-04-23 苏州菲达旭微电子有限公司 一种双电压下线性led负载匹配电路
US10566892B1 (en) 2019-02-06 2020-02-18 Dialog Semiconductor (Uk) Limited Power stage overdrive extender for area optimization and operation at low supply voltage
TWI692927B (zh) * 2019-05-03 2020-05-01 台達電子工業股份有限公司 電力電路以及驅動電路
JP7348968B2 (ja) * 2019-06-24 2023-09-21 テキサス インスツルメンツ インコーポレイテッド 複数の駆動ステージ及び関連モードを備えるスイッチングコンバータ
DE102019210566B4 (de) * 2019-07-17 2022-03-17 Conti Temic Microelectronic Gmbh Vorrichtung und Verfahren zum Messen eines durch eine PWM-angesteuerte induktive Last fließenden Stromes
US11675011B2 (en) * 2019-08-15 2023-06-13 Analog Devices International Unlimited Company Switch condition monitoring
US11183934B2 (en) 2019-10-17 2021-11-23 Infineon Technologies Americas Corp. Embedded substrate voltage regulators
US11147165B2 (en) 2019-10-17 2021-10-12 Infineon Technologies Austria Ag Electronic system and interposer having an embedded power device module
US11071206B2 (en) 2019-10-17 2021-07-20 Infineon Technologies Austria Ag Electronic system and processor substrate having an embedded power device module
KR20210101464A (ko) * 2020-02-10 2021-08-19 에스케이하이닉스 주식회사 수신 회로, 이를 이용하는 반도체 장치 및 반도체 시스템
WO2021255729A1 (en) * 2020-06-15 2021-12-23 Ariel Scientific Innovations Ltd. Control circuit for ring oscillator-based power controller
CN113014077B (zh) * 2021-03-30 2022-06-28 国硅集成电路技术(无锡)有限公司 一种高压pn桥栅驱动电路

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4428675A1 (de) 1994-08-12 1996-02-15 Siemens Ag Schaltungsanordnung zum Schutz eines abschaltbaren Leistungshalbleiter-Schalters vor Überspannungen
US5877646A (en) 1996-03-20 1999-03-02 Abb Research Ltd Method for the turn-on regulation of an IGBT and apparatus for carrying out the method
US5926012A (en) 1996-09-20 1999-07-20 Fuji Electric Co., Ltd. Gate drive circuit in power converter with condition detection device
US6459324B1 (en) 2000-10-23 2002-10-01 International Rectifier Corporation Gate drive circuit with feedback-controlled active resistance
US20040027193A1 (en) 2001-08-29 2004-02-12 Shuji Katoh Semiconductor power converting apparatus
US20080122497A1 (en) 2006-10-02 2008-05-29 Hitachi, Ltd. Gate Drive Circuit
US7570102B2 (en) * 2003-09-10 2009-08-04 Toshiba Mitsubishi - Electric Industrial Systems Corporation Gate driving circuit for driving a gate electrode of an electric power switching element with simple structure
GB2458704A (en) 2008-03-28 2009-09-30 Bombardier Transp Gmbh An improved overcurrent protection circuit for an IGBT in an inverter
US7626368B2 (en) * 2006-04-11 2009-12-01 Infineon Technologies Ag Method and apparatus for providing a regulated voltage at a voltage output
US20120119821A1 (en) 2010-11-17 2012-05-17 Nxp B.V. Integrated circuit for emulating a resistor
US20130147523A1 (en) 2008-09-30 2013-06-13 Infineon Technologies Austria Ag Circuit for driving a transistor
US20130321035A1 (en) * 2012-05-29 2013-12-05 Infineon Technologies Ag Driver Circuit
US20140203860A1 (en) 2013-01-21 2014-07-24 Denso Corporation Gate drive circuit for transistor
US20150318847A1 (en) 2011-05-25 2015-11-05 Fuji Electric Co., Ltd. Voltage controlled switching element gate drive circuit

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4040769B2 (ja) * 1998-11-12 2008-01-30 三菱電機株式会社 放電灯点灯装置
JP3883925B2 (ja) 2002-07-30 2007-02-21 三菱電機株式会社 電力用半導体素子の駆動回路
US8633755B2 (en) * 2010-11-22 2014-01-21 Denso Corporation Load driver with constant current variable structure
GB2497970A (en) * 2011-12-23 2013-07-03 Amantys Ltd Power semiconductor switching device controller
CN103684378B (zh) * 2012-08-29 2017-05-24 英飞凌科技奥地利有限公司 用于驱动晶体管的电路

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4428675A1 (de) 1994-08-12 1996-02-15 Siemens Ag Schaltungsanordnung zum Schutz eines abschaltbaren Leistungshalbleiter-Schalters vor Überspannungen
US5877646A (en) 1996-03-20 1999-03-02 Abb Research Ltd Method for the turn-on regulation of an IGBT and apparatus for carrying out the method
US5926012A (en) 1996-09-20 1999-07-20 Fuji Electric Co., Ltd. Gate drive circuit in power converter with condition detection device
US6459324B1 (en) 2000-10-23 2002-10-01 International Rectifier Corporation Gate drive circuit with feedback-controlled active resistance
US20040027193A1 (en) 2001-08-29 2004-02-12 Shuji Katoh Semiconductor power converting apparatus
US7570102B2 (en) * 2003-09-10 2009-08-04 Toshiba Mitsubishi - Electric Industrial Systems Corporation Gate driving circuit for driving a gate electrode of an electric power switching element with simple structure
US7626368B2 (en) * 2006-04-11 2009-12-01 Infineon Technologies Ag Method and apparatus for providing a regulated voltage at a voltage output
US20080122497A1 (en) 2006-10-02 2008-05-29 Hitachi, Ltd. Gate Drive Circuit
GB2458704A (en) 2008-03-28 2009-09-30 Bombardier Transp Gmbh An improved overcurrent protection circuit for an IGBT in an inverter
US20130147523A1 (en) 2008-09-30 2013-06-13 Infineon Technologies Austria Ag Circuit for driving a transistor
US20120119821A1 (en) 2010-11-17 2012-05-17 Nxp B.V. Integrated circuit for emulating a resistor
US20150318847A1 (en) 2011-05-25 2015-11-05 Fuji Electric Co., Ltd. Voltage controlled switching element gate drive circuit
US20130321035A1 (en) * 2012-05-29 2013-12-05 Infineon Technologies Ag Driver Circuit
US20140203860A1 (en) 2013-01-21 2014-07-24 Denso Corporation Gate drive circuit for transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11462989B2 (en) * 2019-11-22 2022-10-04 Lg Electronics Inc. Power converting apparatus, and vehicle including the same

Also Published As

Publication number Publication date
EP3219010A1 (en) 2017-09-20
EP3219010B1 (en) 2020-07-08
US20170302151A1 (en) 2017-10-19
CN107112887B (zh) 2019-10-15
KR102404605B1 (ko) 2022-05-31
WO2016075056A1 (en) 2016-05-19
CN107112887A (zh) 2017-08-29
JP2017534237A (ja) 2017-11-16
KR20170084215A (ko) 2017-07-19

Similar Documents

Publication Publication Date Title
US10199916B2 (en) Resistor emulation and gate boost
US11469756B2 (en) Multi-stage gate turn-off with dynamic timing
US10263412B2 (en) System and method for desaturation detection
US11139808B2 (en) Semiconductor device and power conversion system
US9755630B2 (en) Solid-state circuit breakers and related circuits
US7315439B2 (en) Method and circuit arrangement for limiting an overvoltage
EP2747260B1 (en) Method for operating an electrical power rectifier, and an electrical power rectifier
JP5800006B2 (ja) 半導体装置
JP2018057105A (ja) 半導体駆動装置ならびにこれを用いた電力変換装置
GB2532215A (en) Gate boost
Fink et al. Gate-driver with full protection for SiC-MOSFET modules
Lobsiger et al. Closed-Loop di/dt&dv/dt control and dead time minimization of IGBTs in bridge leg configuration
JP7087371B2 (ja) 半導体装置およびパワーモジュール
KR102661973B1 (ko) 전력 스위치용 단락보호회로
US9412853B2 (en) Protective device for a voltage-controlled semiconductor switch
EP2942870B1 (en) Arrangement and method for a power semiconductor switch
GB2532214A (en) Resistor emulation
EP3493343B1 (en) Circuit arrangement
KR101953179B1 (ko) 컨버터 및 이를 구비한 가전기기
US20240258908A1 (en) Overcurrent protection method and device

Legal Events

Date Code Title Description
AS Assignment

Owner name: MASCHINENFABRIK REINHAUSEN GMBH, GERMANY

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SNOOK, MARK;LEEDHAM, ROBERT JOHN;SIGNING DATES FROM 20170607 TO 20170710;REEL/FRAME:043116/0328

AS Assignment

Owner name: MASCHINENFABRIK REINHAUSEN GMBH, GERMANY

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SNOOK, MARK;LEEDHAM, ROBERT JOHN;LYLE, ROBIN;SIGNING DATES FROM 20170607 TO 20170802;REEL/FRAME:043184/0766

STCF Information on status: patent grant

Free format text: PATENTED CASE

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 4