UA94328C2 - Method for manufacturing back planes - Google Patents

Method for manufacturing back planes

Info

Publication number
UA94328C2
UA94328C2 UAA200912324A UAA200912324A UA94328C2 UA 94328 C2 UA94328 C2 UA 94328C2 UA A200912324 A UAA200912324 A UA A200912324A UA A200912324 A UAA200912324 A UA A200912324A UA 94328 C2 UA94328 C2 UA 94328C2
Authority
UA
Ukraine
Prior art keywords
blanks
holes
dielectric
copper
copper layer
Prior art date
Application number
UAA200912324A
Other languages
Russian (ru)
Ukrainian (uk)
Original Assignee
Одесский Национальный Университет Им. И.И. Мечникова
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Одесский Национальный Университет Им. И.И. Мечникова filed Critical Одесский Национальный Университет Им. И.И. Мечникова
Priority to UAA200912324A priority Critical patent/UA94328C2/en
Publication of UA94328C2 publication Critical patent/UA94328C2/en

Links

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  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)

Abstract

The invention relates to means for manufacturing back planes for radio engineering industry. A method for manufacturing of back planes comprises manufacturing dielectric blanks with holes; thereafter, surfaces of dielectric blanks are prepared to deposit of a thin copper layer, a thin copper layer is deposited in vacuum to surfaces of dielectric blanks and walls of mounting via-holes, pattern of dielectric blanks is formed on the surfaces of dielectric blanks via deposition of photoemulsion; copper layer is deposited surfaces of dielectric blanks and walls of via-holes. Prior to the thin copper layer deposition, surfaces of dielectric blanks are prepared; for this, a number of blanks and curtain portion of waterless formiate of divalent copper are placed in a vacuum chamber, where exhaustion of (1-3)× 10-2 mm of mercury is maintained, dielectric blanks are heated to temperature of 170-180 °C which is maintained during 20 min.; thereafter temperature is increased to 190-200 °C and maintained to finishing process of the thin copper layer deposition, thin layer is deposited on the surfaces of dielectric blanks and walls of via-holes via heating waterless formiate of divalent copper up to evaporation temperature of 180-185 °C, the said waterless formiate is evaporated, forming in such a way a mist of copper formiate which is equally spaced over the vacuum chamber volume and being in contact with surfaces and walls of mounting via-holes of dielectric blanks which are heated to dissociation temperature of divalent copper waterless formiate which equals to 190-200 °C. As a result, copper particles resolve to copper and gases COand H, on the walls of mounting holes and on the surface of dielectric blanks solid copper layer coupled with surfaces of dielectric blanks and their holes which has the same thickness both in the holes and on the surfaces of dielectric blanks. The invention provides improvement of adhesion and deposition of the copper layer to horizontal surfaces and metal plating of small diameters holes of back planes.
UAA200912324A 2009-11-30 2009-11-30 Method for manufacturing back planes UA94328C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
UAA200912324A UA94328C2 (en) 2009-11-30 2009-11-30 Method for manufacturing back planes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
UAA200912324A UA94328C2 (en) 2009-11-30 2009-11-30 Method for manufacturing back planes

Publications (1)

Publication Number Publication Date
UA94328C2 true UA94328C2 (en) 2011-04-26

Family

ID=50832437

Family Applications (1)

Application Number Title Priority Date Filing Date
UAA200912324A UA94328C2 (en) 2009-11-30 2009-11-30 Method for manufacturing back planes

Country Status (1)

Country Link
UA (1) UA94328C2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2529125C1 (en) * 2013-02-22 2014-09-27 Дмитрий Владимирович Семенок Solution for laser-induced metallisation of dielectrics
RU2532775C1 (en) * 2013-03-26 2014-11-10 Дмитрий Владимирович Семенок Solution for laser-induced metallisation of dielectrics
RU2550507C2 (en) * 2013-03-12 2015-05-10 Дмитрий Владимирович Семенок Solution for laser-induced metal coating of dielectric materials

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2529125C1 (en) * 2013-02-22 2014-09-27 Дмитрий Владимирович Семенок Solution for laser-induced metallisation of dielectrics
RU2550507C2 (en) * 2013-03-12 2015-05-10 Дмитрий Владимирович Семенок Solution for laser-induced metal coating of dielectric materials
RU2532775C1 (en) * 2013-03-26 2014-11-10 Дмитрий Владимирович Семенок Solution for laser-induced metallisation of dielectrics

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