TWM650231U

TWM650231U - Dual deposition chamber equipment for producing silicon material

Info

Publication number: TWM650231U
Application number: TW112210648U
Authority: TW
Inventors: 藍崇文; 邱玟溢; 謝兆坤; 謝兆翔
Original assignee: 豐毅精密科技有限公司; 藍星材料股份有限公司
Priority date: 2022-08-12
Filing date: 2022-08-12
Publication date: 2024-01-01

Abstract

一種用於生產矽材料的雙沉積腔設備，包括一爐體、一冷卻夾套、一沉積裝置及一真空抽氣裝置。該冷卻夾套與該爐體相連通，該冷卻夾套在該爐體上方定義出一空間，且該冷卻夾套包括與該空間連通的一開口。該沉積裝置包括至少一第一沉積基板及至少一第二沉積基板，該第一沉積基板及該第二沉積基板並列地設置於該空間，該第一沉積基板及該第二沉積基板分別具有相對於一垂直軸向朝下地傾斜的一第一內壁面以及一第二內壁面，且該第一內壁面及該第二內壁面上形成有一非平坦區域。該真空抽氣裝置與該冷卻夾套的該開口連通。A dual deposition chamber equipment for producing silicon materials includes a furnace body, a cooling jacket, a deposition device and a vacuum evacuation device. The cooling jacket is connected with the furnace body, the cooling jacket defines a space above the furnace body, and the cooling jacket includes an opening connected with the space. The deposition device includes at least a first deposition substrate and at least a second deposition substrate. The first deposition substrate and the second deposition substrate are arranged side by side in the space. The first deposition substrate and the second deposition substrate respectively have opposite A first inner wall surface and a second inner wall surface are inclined downward in a vertical axis, and a non-flat area is formed on the first inner wall surface and the second inner wall surface. The vacuum evacuation device is connected to the opening of the cooling jacket.

Description

用於生產矽材料的雙沉積腔設備Dual deposition chamber equipment for the production of silicon materials

本新型有關於一種沉積腔設備，特別是關於一種用於生產矽材料的雙沉積腔設備。The present invention relates to a deposition chamber equipment, in particular to a dual deposition chamber equipment for producing silicon materials.

矽材料是廣泛運用於半導體產業的材料之一，其中一氧化矽是半導體元件的保護絕緣層以及陶瓷的重要原料，且一氧化矽也可應用於食品或藥品的包裝材料，而多孔矽材料因具有獨特的光電特性而可運用於各個不同的領域，習知的沉積腔設備如台灣發明專利第TW I658002 B號，提供沉積基板以沉積一氧化矽，也可見於台灣發明專利第TW I723730 B號，揭示沉積鎂蒸氣並收集殘留多孔矽材料。其他沉積腔設備亦可見於美國專利第US9790095B2、US7431899B2號，揭示製備氧化矽粉末及氧化矽沉積物的裝置，美國專利第US20070259113A1號揭示一氧化矽的製造方法。然而，前述專利所揭示沉積腔設備中的沉積基板的沉積速度較慢而產生沉積效率不佳的問題，因此如何改善沉積腔設備沉積的沉積效率，乃本領域所屬技術人員欲解決的問題。Silicon material is one of the materials widely used in the semiconductor industry. Silicon monoxide is the protective insulating layer of semiconductor components and an important raw material for ceramics. Silicon monoxide can also be used in packaging materials for food or medicine. Porous silicon materials are It has unique optoelectronic properties and can be used in various fields. Conventional deposition chamber equipment such as Taiwan Invention Patent No. TW I658002 B provides a deposition substrate for depositing silicon oxide. It can also be seen in Taiwan Invention Patent No. TW I723730 B. , revealing the deposited magnesium vapor and collecting the residual porous silicon material. Other deposition chamber equipment can also be found in US Patent Nos. US9790095B2 and US7431899B2, which disclose devices for preparing silicon oxide powder and silicon oxide deposits. US Patent No. US20070259113A1 discloses a manufacturing method of silicon monoxide. However, the deposition speed of the deposition substrate in the deposition chamber equipment disclosed in the aforementioned patents is slow, resulting in poor deposition efficiency. Therefore, how to improve the deposition efficiency of the deposition chamber equipment is a problem that those skilled in the art want to solve.

本新型的目的是為了解決習知矽材料沉積設備的生產效率有待改善的問題。The purpose of the present invention is to solve the problem that the production efficiency of conventional silicon material deposition equipment needs to be improved.

為達上述目的，本新型提供一種用於生產矽材料的雙沉積腔設備，包括一爐體、一冷卻夾套、一沉積裝置以及一真空抽氣裝置。該冷卻夾套設置於該爐體上方且該爐體相連通，該冷卻夾套在該爐體上方定義出一空間，且該冷卻夾套包括與該空間連通的一開口。該沉積裝置包括至少一第一沉積基板以及至少一第二沉積基板，該第一沉積基板及該第二沉積基板並列地設置於該爐體上方與該冷卻夾套之間的該空間，該第一沉積基板及該第二沉積基板分別具有相對於一垂直軸向朝下地傾斜的一第一內壁面以及一第二內壁面，且該第一內壁面及該第二內壁面上形成有一非平坦區域，該非平坦區域是分別相對於該第一內壁面及該第二內壁面的一平面突出或凹陷的一結構，該結構是一個或多個的凸點、一個或多個的凹點、一個或多個的凸條、一個或多個的凹條或前述的組合。該真空抽氣裝置與該冷卻夾套的該開口連通。In order to achieve the above purpose, the present invention provides a dual deposition chamber equipment for producing silicon materials, including a furnace body, a cooling jacket, a deposition device and a vacuum evacuation device. The cooling jacket is disposed above the furnace body and communicates with the furnace body. The cooling jacket defines a space above the furnace body, and the cooling jacket includes an opening communicating with the space. The deposition device includes at least a first deposition substrate and at least a second deposition substrate. The first deposition substrate and the second deposition substrate are arranged side by side in the space between the furnace body and the cooling jacket. A deposition substrate and the second deposition substrate respectively have a first inner wall surface and a second inner wall surface that are inclined downward relative to a vertical axis, and an uneven surface is formed on the first inner wall surface and the second inner wall surface. The non-flat area is a structure that protrudes or recesses relative to a plane of the first inner wall surface and the second inner wall surface respectively. The structure is one or more convex points, one or more concave points, a or multiple convex strips, one or more concave strips or a combination of the above. The vacuum evacuation device is connected to the opening of the cooling jacket.

為達上述目的，本新型還提供一種用於生產矽材料的雙沉積腔設備，包括一爐體、一冷卻夾套、一沉積裝置以及一鈍態氣體供應裝置。該冷卻夾套設置於該爐體上方且該爐體相連通，該冷卻夾套在該爐體上方定義出一空間。該沉積裝置包括至少一第一沉積基板以及至少一第二沉積基板，該第一沉積基板及該第二沉積基板並列地設置於該爐體上方與該冷卻夾套之間的該空間，該第一沉積基板及該第二沉積基板分別具有相對於一垂直軸向朝下地傾斜的一第一內壁面以及一第二內壁面，且該第一內壁面及該第二內壁面上形成有一非平坦區域，該非平坦區域是分別相對於該第一內壁面及該第二內壁面的一平面突出或凹陷的一結構，該結構是一個或多個的凸點、一個或多個的凹點、一個或多個的凸條、一個或多個的凹條或前述的組合。該鈍態氣體供應裝置與該爐體的一充氣口連通。To achieve the above purpose, the present invention also provides a dual deposition chamber equipment for producing silicon materials, including a furnace body, a cooling jacket, a deposition device and a passive gas supply device. The cooling jacket is disposed above the furnace body and communicates with the furnace body. The cooling jacket defines a space above the furnace body. The deposition device includes at least a first deposition substrate and at least a second deposition substrate. The first deposition substrate and the second deposition substrate are arranged side by side in the space between the furnace body and the cooling jacket. A deposition substrate and the second deposition substrate respectively have a first inner wall surface and a second inner wall surface that are inclined downward relative to a vertical axis, and an uneven surface is formed on the first inner wall surface and the second inner wall surface. The non-flat area is a structure that protrudes or recesses relative to a plane of the first inner wall surface and the second inner wall surface respectively. The structure is one or more convex points, one or more concave points, a or multiple convex strips, one or more concave strips or a combination of the above. The passive gas supply device is connected with an air filling port of the furnace body.

為達上述目的，本新型更提供一種用於生產矽材料的雙沉積腔設備，包括一爐體、一冷卻夾套、一沉積裝置、一真空抽氣裝置以及一鈍態氣體供應裝置。該冷卻夾套設置於該爐體上方且該爐體相連通，該冷卻夾套在該爐體上方定義出一空間，且該冷卻夾套包括與該空間連通的一開口。該沉積裝置包括至少一第一沉積基板以及至少一第二沉積基板，該第一沉積基板及該第二沉積基板並列地設置於該爐體上方與該冷卻夾套之間的該空間，該第一沉積基板及該第二沉積基板分別具有相對於一垂直軸向朝下地傾斜的一第一內壁面以及一第二內壁面，且該第一內壁面及該第二內壁面上形成有一非平坦區域，該非平坦區域是分別相對於該第一內壁面及該第二內壁面的一平面突出或凹陷的一結構，該結構是一個或多個的凸點、一個或多個的凹點、一個或多個的凸條、一個或多個的凹條或前述的組合。該真空抽氣裝置與該冷卻夾套的該開口連通。該鈍態氣體供應裝置與該爐體的一充氣口連通。To achieve the above purpose, the present invention further provides a dual deposition chamber equipment for producing silicon materials, including a furnace body, a cooling jacket, a deposition device, a vacuum evacuation device and a passive gas supply device. The cooling jacket is disposed above the furnace body and communicates with the furnace body. The cooling jacket defines a space above the furnace body, and the cooling jacket includes an opening communicating with the space. The deposition device includes at least a first deposition substrate and at least a second deposition substrate. The first deposition substrate and the second deposition substrate are arranged side by side in the space between the furnace body and the cooling jacket. A deposition substrate and the second deposition substrate respectively have a first inner wall surface and a second inner wall surface that are inclined downward relative to a vertical axis, and an uneven surface is formed on the first inner wall surface and the second inner wall surface. The non-flat area is a structure that protrudes or recesses relative to a plane of the first inner wall surface and the second inner wall surface respectively. The structure is one or more convex points, one or more concave points, a or multiple convex strips, one or more concave strips or a combination of the above. The vacuum evacuation device is connected to the opening of the cooling jacket. The passive gas supply device is connected with an air filling port of the furnace body.

本文所使用的術語僅是基於闡述特定實施例的目的而並非限制本新型。除非上下文另外指明，否則本文所用單數形式“一”及“該”也可能包括複數形式。The terminology used herein is for the purpose of describing specific embodiments only and does not limit the invention. As used herein, the singular forms "a", "an" and "the" may include the plural forms as well, unless the context dictates otherwise.

本文所使用的方向性用語，例如上、下、左、右、前、後及其衍生詞或同義詞，乃涉及附圖中的元件的方位，並非限制本新型，除非上下文另外明確記載。有關本新型的詳細說明及技術內容，現就配合圖式說明如下。Directional terms used herein, such as up, down, left, right, front, back and their derivatives or synonyms, refer to the orientation of elements in the drawings and do not limit the invention unless the context clearly states otherwise. The detailed description and technical content of this new model are described below with reference to the drawings.

參閱『圖1』、『圖2A』及『圖2B』，本新型揭示一種用於生產矽材料的雙沉積腔設備，包括一爐體10、一冷卻夾套20、一沉積裝置30、至少一擋板40、一坩堝50以及一真空抽氣裝置60。Referring to "Figure 1", "Figure 2A" and "Figure 2B", the present model discloses a dual deposition chamber equipment for producing silicon materials, including a furnace body 10, a cooling jacket 20, a deposition device 30, at least one baffle 40, a crucible 50 and a vacuum evacuation device 60.

該爐體10包括一絕緣座體11以及至少一加熱器12，該絕緣座體11的一頂部111包括複數個通孔112，以連通該爐體10與該冷卻夾套20。該加熱器12設置在該絕緣座體11的一內側及一底側且圍繞在該坩堝50的外圍，該加熱器12用以加熱放置於該坩堝50內的一待反應材料80，使該待反應材料80形成一反應蒸氣。其中，該絕緣座體11的材料可以是碳纖維、耐火水泥或鎂磚。The furnace body 10 includes an insulating base body 11 and at least one heater 12 . A top 111 of the insulating base body 11 includes a plurality of through holes 112 to connect the furnace body 10 and the cooling jacket 20 . The heater 12 is disposed on an inner side and a bottom side of the insulating base 11 and surrounds the periphery of the crucible 50 . The heater 12 is used to heat a material 80 to be reacted placed in the crucible 50 to make the material 80 to be reacted. Reactive material 80 forms a reactive vapor. The material of the insulating base body 11 may be carbon fiber, refractory cement or magnesia brick.

該冷卻夾套20連通地設置在該爐體10上方且定義出一空間21，該冷卻夾套20包括一冷卻通道22以及一開口23。該冷卻通道22具有一入口端221以及一出口端222，該入口端221連接一冷卻裝置24，以提供一冷卻流體流入該冷卻通道22，並且該冷卻流體從該出口端222流出，該冷卻流體可以包括多種液體或氣體的任意一種，舉例來說，該冷卻流體可以是水、冷卻劑或空氣。該開口23設置於該冷卻夾套20的一頂部以連通該真空抽氣裝置60，藉由運作該真空抽氣裝置60，使該冷卻夾套20處於一真空環境，該真空環境為小於1 torr的真空狀態。The cooling jacket 20 is connected above the furnace body 10 and defines a space 21 . The cooling jacket 20 includes a cooling channel 22 and an opening 23 . The cooling channel 22 has an inlet end 221 and an outlet end 222. The inlet end 221 is connected to a cooling device 24 to provide a cooling fluid flowing into the cooling channel 22, and the cooling fluid flows out from the outlet end 222. The cooling fluid Any of a variety of liquids or gases may be included; for example, the cooling fluid may be water, coolant, or air. The opening 23 is provided on a top of the cooling jacket 20 to communicate with the vacuum evacuation device 60. By operating the vacuum evacuation device 60, the cooling jacket 20 is placed in a vacuum environment, and the vacuum environment is less than 1 torr. vacuum state.

該沉積裝置30包括至少一第一沉積基板31以及至少一第二沉積基板32，該第一沉積基板31與該第二沉積基板32並列且相對地設置在該冷卻夾套20之間的該空間21，該第一沉積基板31具有一第一內壁面311，該第二沉積基板32具有一第二內壁面321，該第一內壁面311以及該第二內壁面321相對於一垂直軸向朝下地傾斜且形成有一非平坦區域，該非平坦區域是分別相對於該第一內壁面311及該第二內壁面321的一平面突出或凹陷的一結構33，該結構33是一個或多個的凸點331、一個或多個的凹點332、一個或多個的凸條333、一個或多個的凹條334或前述的組合(如『圖2A』、圖『2B』所示，在圖式中以該第一沉積基板31作為舉例)。進一步地，該凸點331、該凹點332、該凸條333、該凹條334之間的間距可以為相同或相異，該凸點331、該凹點332、該凸條333、該凹條334的突出高度或凹陷深度可為相同或相異。其中，該第一沉積基板31以及該第二沉積基板32相對於垂直軸傾斜的角度可以為10°至80°之間。The deposition device 30 includes at least a first deposition substrate 31 and at least a second deposition substrate 32 . The first deposition substrate 31 and the second deposition substrate 32 are arranged side by side and oppositely in the space between the cooling jackets 20 21. The first deposition substrate 31 has a first inner wall surface 311, and the second deposition substrate 32 has a second inner wall surface 321. The first inner wall surface 311 and the second inner wall surface 321 face relative to a vertical axis. The ground is inclined and forms a non-flat area. The non-flat area is a structure 33 that protrudes or recesses relative to a plane of the first inner wall surface 311 and the second inner wall surface 321 respectively. The structure 33 is one or more convex structures. Points 331, one or more concave points 332, one or more convex strips 333, one or more concave strips 334 or a combination of the above (as shown in "Figure 2A", "2B", in the drawings The first deposition substrate 31 is taken as an example). Further, the spacing between the convex points 331, the concave points 332, the convex strips 333, and the concave strips 334 can be the same or different. The protruding heights or recessed depths of strips 334 may be the same or different. The angle of inclination of the first deposition substrate 31 and the second deposition substrate 32 relative to the vertical axis may be between 10° and 80°.

藉由該第一沉積基板31以及該第二沉積基板32傾斜的設置以及該結構33可大幅增加該反應蒸氣的沉積效率，其中該結構33可以使該反應蒸氣更容易發生成核（Nucleation）的現象。本實施例中，該第一沉積基板31及該第二沉積基板32各為兩個且依序地設置在該冷卻夾套20的該空間21中，由左至右依序為該第一沉積基板31、該第二沉積基板32、該第一沉積基板31及該第二沉積基板32，其中，該第一沉積基板31的該第一內壁面311與該第二沉積基板32的該第二內壁面321是面對面但非平行的設置，該第一沉積基板31相較於垂直軸順時針傾斜一角度，該第二沉積基板32相較於垂直軸逆時針傾斜該角度。在其他例子中，該第一沉積基板31及該第二沉積基板32亦可上下分層地設置在該冷卻夾套20的該空間21中，詳細來說，該空間21可分為一上層及一下層，該上層及該下層分別設置有該第一沉積基板31及該第二沉積基板32。The deposition efficiency of the reaction vapor can be greatly increased by the inclined arrangement of the first deposition substrate 31 and the second deposition substrate 32 and the structure 33 , wherein the structure 33 can make the reaction vapor more likely to nucleate. phenomenon. In this embodiment, there are two first deposition substrates 31 and two second deposition substrates 32 each and are arranged in the space 21 of the cooling jacket 20 in sequence. The first deposition substrates are sequentially from left to right. The substrate 31 , the second deposition substrate 32 , the first deposition substrate 31 and the second deposition substrate 32 , wherein the first inner wall surface 311 of the first deposition substrate 31 and the second surface of the second deposition substrate 32 The inner wall surfaces 321 are arranged face to face but not parallel. The first deposition substrate 31 is inclined at an angle clockwise compared to the vertical axis, and the second deposition substrate 32 is inclined at an angle counterclockwise compared to the vertical axis. In other examples, the first deposition substrate 31 and the second deposition substrate 32 can also be arranged in the space 21 of the cooling jacket 20 in layers up and down. Specifically, the space 21 can be divided into an upper layer and an upper layer. On the lower layer, the upper layer and the lower layer are provided with the first deposition substrate 31 and the second deposition substrate 32 respectively.

該擋板40設置於該空間21之中且位於該冷卻夾套20的該開口23與該沉積裝置30之間，進一步來說，該擋板40可包括一第一擋板41以及一第二擋板42，該第一擋板41設置於該沉積裝置30的上方，可阻擋該反應蒸氣向上流竄以增加該反應蒸氣沉積在該沉積裝置30的時間，以提升沉積效率，且該反應蒸氣亦可沉積在該第一擋板41上。該第二擋板42設置於該冷卻夾套20靠近該開口23的一側，以阻擋該反應蒸氣被抽出該冷卻夾套20而進入該真空抽氣裝置60。在一例子中，該第一擋板41的一下表面411可形成有該結構33(圖未示)。The baffle 40 is disposed in the space 21 and between the opening 23 of the cooling jacket 20 and the deposition device 30. Further, the baffle 40 may include a first baffle 41 and a second The baffle 42, the first baffle 41 is disposed above the deposition device 30, can block the upward flow of the reaction vapor to increase the time for the reaction vapor to be deposited in the deposition device 30, so as to improve the deposition efficiency, and the reaction vapor is also can be deposited on the first baffle 41 . The second baffle 42 is disposed on a side of the cooling jacket 20 close to the opening 23 to prevent the reaction vapor from being extracted from the cooling jacket 20 and entering the vacuum evacuation device 60 . In one example, the structure 33 (not shown) can be formed on the lower surface 411 of the first baffle 41 .

該坩堝50設置在該爐體10內且包括一本體51及一上開口52，該本體51包括一環壁511及一底壁512，該環壁511及該底壁512定義出一容置空間53，該容置空間53可供放置該待反應材料80。進一步參閱『圖3』及『圖4』，在一實施例中，該本體51更包括至少一輔助加熱肋513，該輔助加熱肋513連接在該環壁511上且穿設於該容置空間53，提供放置於該坩堝50內的該待反應材料80均勻的加熱效果，該輔助加熱肋513可為複數個且十字交錯地設置在該容置空間53，在其他例子中，該輔助加熱肋513的數量以及設置樣態不在此限。該坩堝50可由陶瓷、石墨、白金、鎳或鉻製成。The crucible 50 is arranged in the furnace body 10 and includes a body 51 and an upper opening 52. The body 51 includes an annular wall 511 and a bottom wall 512. The annular wall 511 and the bottom wall 512 define an accommodation space 53. , the accommodating space 53 can be used to place the material 80 to be reacted. Refer further to "Figure 3" and "Figure 4". In one embodiment, the body 51 further includes at least one auxiliary heating rib 513. The auxiliary heating rib 513 is connected to the ring wall 511 and penetrates the accommodation space. 53, to provide a uniform heating effect for the material 80 to be reacted placed in the crucible 50. The auxiliary heating ribs 513 can be plural and arranged in a crosswise manner in the accommodating space 53. In other examples, the auxiliary heating ribs 513 The number and setting of 513 are not limited to this. The crucible 50 can be made of ceramic, graphite, platinum, nickel or chromium.

在第一實施例中，該雙沉積腔設備可用於沉積一一氧化矽沉積物。首先，將一矽粉體放置於該坩堝50內，透過該加熱器12將該坩堝50加熱至一第一溫度並維持一第一加熱時間，致使該複數矽粉體的表面形成二氧化矽層，使其變成複數二氧化矽殼/矽核複合粉體。其中，該第一溫度的範圍為600℃至900℃，該第一加熱時間的範圍為12小時至36小時。In a first embodiment, the dual deposition chamber apparatus can be used to deposit a silicon oxide deposit. First, a silicon powder is placed in the crucible 50, and the crucible 50 is heated to a first temperature through the heater 12 and maintained for a first heating time, so that a silicon dioxide layer is formed on the surface of the silicon powder. , turning it into a complex silica shell/silica core composite powder. Wherein, the first temperature ranges from 600°C to 900°C, and the first heating time ranges from 12 hours to 36 hours.

接著，該真空抽氣裝置60持續運作，致使該冷卻夾套20以及該爐體10內呈現該真空環境，並該加熱器12持續將該坩堝50加熱至一第二溫度，致使該二氧化矽殼/矽核複合粉體的二氧化矽殼與矽核產生反應，形成一一氧化矽並昇華為一一氧化矽蒸氣。其中，該第二溫度的範圍為1200℃至1450℃。Then, the vacuum evacuation device 60 continues to operate, causing the vacuum environment to appear in the cooling jacket 20 and the furnace body 10, and the heater 12 continues to heat the crucible 50 to a second temperature, causing the silicon dioxide to The silicon dioxide shell of the shell/silicon core composite powder reacts with the silicon core to form silicon oxide and sublimates into silicon oxide vapor. Wherein, the second temperature ranges from 1200°C to 1450°C.

最後，該一氧化矽蒸氣通過該爐體10的該複數通孔112飄散至該冷卻夾套20的該空間21，該一氧化矽蒸氣冷卻並沉積在該沉積裝置30的該第一沉積基板31及該第二沉積基板32，形成該一氧化矽沉積物。Finally, the silicon monoxide vapor diffuses to the space 21 of the cooling jacket 20 through the plurality of through holes 112 of the furnace body 10 , and the silicon monoxide vapor is cooled and deposited on the first deposition substrate 31 of the deposition device 30 and the second deposition substrate 32 to form the silicon oxide deposit.

參閱『圖5』，為本新型第二實施例的結構示意圖，在本實施例中，用於生產矽材料的雙沉積腔設備的結構大致與第一實施例相同，差異在於本實施例中將第一實施例的該真空抽氣裝置60替換為一鈍態氣體供應裝置70，該鈍態氣體供應裝置70連通地設置於該爐體10的該絕緣座體11的一充氣口113，以提供一鈍態氣體進入該容置空間53，該鈍態氣體可為氬氣或氮氣，且本實施例中，該擋板40設置於該空間21之中且位於該沉積裝置30的上方。Refer to "Figure 5", which is a schematic structural diagram of the second embodiment of the present invention. In this embodiment, the structure of the dual deposition chamber equipment used to produce silicon materials is roughly the same as that of the first embodiment. The difference is that in this embodiment, In the first embodiment, the vacuum evacuation device 60 is replaced with an inert gas supply device 70. The inert gas supply device 70 is connected to an air filling port 113 of the insulating base 11 of the furnace body 10 to provide A passive gas enters the accommodation space 53 , and the passive gas may be argon or nitrogen. In this embodiment, the baffle 40 is disposed in the space 21 and above the deposition device 30 .

在第二實施例中，該雙沉積腔設備亦可用於沉積該一氧化矽沉積物。首先，將該矽粉體放置於該坩堝50內，透過該加熱器12將該坩堝50加熱至該第一溫度並維持該第一加熱時間，致使該複數矽粉體的表面形成二氧化矽層，使其變成複數二氧化矽殼/矽核複合粉體。In a second embodiment, the dual deposition chamber apparatus can also be used to deposit the silicon oxide deposit. First, the silicon powder is placed in the crucible 50, and the crucible 50 is heated to the first temperature through the heater 12 and maintained for the first heating time, so that a silicon dioxide layer is formed on the surface of the silicon powder. , turning it into a complex silica shell/silica core composite powder.

接著，該鈍態氣體供應裝置70持續運作，致使該冷卻夾套20以及該爐體10內呈現一鈍態氣氛，並該加熱器12持續將該坩堝50加熱至該第二溫度，致使該二氧化矽殼/矽核複合粉體的二氧化矽殼與矽核產生反應，形成該一氧化矽並昇華為該一氧化矽蒸氣。Then, the passive gas supply device 70 continues to operate, causing the cooling jacket 20 and the furnace body 10 to present a passive atmosphere, and the heater 12 continues to heat the crucible 50 to the second temperature, causing the two The silicon dioxide shell of the silicon oxide shell/silicon core composite powder reacts with the silicon core to form the silicon monoxide and sublimate into the silicon monoxide vapor.

參閱『圖6』，為本新型第三實施例的結構示意圖，在本實施例中，用於生產矽材料的雙沉積腔設備的結構大致與第一及第二實施例相同，差異在於本實施例同時包括該真空抽氣裝置60以及該鈍態氣體供應裝置70，該真空抽氣裝置60連通至該開口23，該鈍態氣體供應裝置70連通至該充氣口113。Refer to "Figure 6", which is a schematic structural diagram of the third embodiment of the present invention. In this embodiment, the structure of the dual deposition chamber equipment used to produce silicon materials is roughly the same as that of the first and second embodiments. The difference is that this embodiment An example includes both the vacuum pumping device 60 and the inert gas supply device 70 . The vacuum pumping device 60 is connected to the opening 23 , and the inert gas supply device 70 is connected to the inflation port 113 .

在第三實施例中，該雙沉積腔設備可用於沉積該一氧化矽沉積物。首先，將該矽粉體放置於該坩堝50內，透過該加熱器12將該坩堝50加熱至該第一溫度並維持該第一加熱時間，致使該複數矽粉體的表面形成二氧化矽層，使其變成複數二氧化矽殼/矽核複合粉體。In a third embodiment, the dual deposition chamber apparatus can be used to deposit the silicon monoxide deposit. First, the silicon powder is placed in the crucible 50, and the crucible 50 is heated to the first temperature through the heater 12 and maintained for the first heating time, so that a silicon dioxide layer is formed on the surface of the silicon powder. , turning it into a complex silica shell/silica core composite powder.

接著，該真空抽氣裝置60持續運作，致使該冷卻夾套20以及該爐體10內呈現該真空環境，且該鈍態氣體供應裝置70通入鈍態氣體，致使該冷卻夾套20以及該爐體10內呈現一鈍態氣氛，並該加熱器12持續將該坩堝50加熱至該第二溫度，致使該二氧化矽殼/矽核複合粉體的二氧化矽殼與矽核產生反應，形成該一氧化矽並昇華為該一氧化矽蒸氣。Then, the vacuum evacuation device 60 continues to operate, causing the vacuum environment to appear in the cooling jacket 20 and the furnace body 10 , and the passivation gas supply device 70 introduces the passivation gas, causing the cooling jacket 20 and the A passive atmosphere is present in the furnace body 10, and the heater 12 continues to heat the crucible 50 to the second temperature, causing the silicon dioxide shell and the silicon core of the silicon dioxide shell/silicon core composite powder to react, The silicon monoxide is formed and sublimated into the silicon monoxide vapor.

綜上所述，本新型透過該第一沉積基板的該第一內壁面以及該第二沉積基板的該第二內壁面相較於垂直軸向下傾斜地設置，且在該第一內壁面及該第二內壁面形成有該非平坦區域，可有效地接收加熱該待反應材料後產生的該反應蒸氣，大幅增加沉積的效率，且該非平坦區域可以使該反應蒸氣更容易發生成核（Nucleation）的現象。To sum up, in the present invention, the first inner wall surface of the first deposition substrate and the second inner wall surface of the second deposition substrate are arranged to be inclined downward relative to the vertical axis, and between the first inner wall surface and the second inner wall surface of the second deposition substrate, The non-flat area formed on the second inner wall surface can effectively receive the reaction vapor generated after heating the material to be reacted, greatly increasing the deposition efficiency, and the non-flat area can make the reaction vapor more likely to nucleate. phenomenon.

10:爐體 11:絕緣座體 111:頂部 112:通孔 113:充氣口 12:加熱器 20:冷卻夾套 21:空間 22:冷卻通道 221:入口端 222:出口端 23:開口 24:冷卻裝置 30:沉積裝置 31:第一沉積基板 311:第一內壁面 32:第二沉積基板 321:第二內壁面 33:結構 331:凸點 332:凹點 333:凸條 334:凹條 40:擋板 41:第一擋板 411:下表面 42:第二擋板 50:坩堝 51:本體 511:環壁 512:底壁 513:輔助加熱肋 52:上開口 53:容置空間 60:真空抽氣裝置 70:鈍態氣體供應裝置 80:待反應材料 10: Furnace body 11: Insulation base body 111:Top 112:Through hole 113:Inflation port 12:Heater 20: Cooling jacket 21:Space 22: Cooling channel 221: Entrance port 222:Export end 23:Open your mouth 24: Cooling device 30:Deposition device 31: First deposition substrate 311: First inner wall surface 32: Second deposition substrate 321: Second inner wall surface 33: Structure 331:Bump 332: Concave point 333: convex strip 334: concave strip 40:Baffle 41:First baffle 411: Lower surface 42:Second baffle 50:Crucible 51:Ontology 511: Ring wall 512: Bottom wall 513: Auxiliary heating rib 52:Open the top 53: Accommodation space 60: Vacuum extraction device 70: Passive gas supply device 80: Materials to be reacted

『圖1』，為本新型第一實施例的結構示意圖。『圖2A』，為本新型第一實施例的沉積基板的正面示意圖。『圖2B』，為本新型第一實施例的沉積基板的側面示意圖。『圖3』，為本新型第一實施例的局部放大示意圖。『圖4』，為本新型『圖3』的A-A剖面示意圖。『圖5』，為本新型第二實施例的結構示意圖。『圖6』，為本新型第三實施例的結構示意圖。 "Figure 1" is a schematic structural diagram of the first embodiment of the present invention. FIG. 2A is a schematic front view of the deposition substrate according to the first embodiment of the present invention. FIG. 2B is a schematic side view of the deposition substrate according to the first embodiment of the present invention. "Figure 3" is a partially enlarged schematic diagram of the first embodiment of the present invention. "Figure 4" is a schematic diagram of the A-A cross-section of "Figure 3" of this new type. "Figure 5" is a schematic structural diagram of the second embodiment of the present invention. "Figure 6" is a schematic structural diagram of the third embodiment of the present invention.

10:爐體 10: Furnace body

11:絕緣座體 11: Insulating base body

111:頂部 111:Top

112:通孔 112:Through hole

12:加熱器 12:Heater

20:冷卻夾套 20: Cooling jacket

21:空間 21:Space

22:冷卻通道 22: Cooling channel

221:入口端 221: Entrance port

222:出口端 222:Export end

23:開口 23:Open your mouth

24:冷卻裝置 24: Cooling device

30:沉積裝置 30:Deposition device

31:第一沉積基板 31: First deposition substrate

311:第一內壁面 311: First inner wall surface

32:第二沉積基板 32: Second deposition substrate

321:第二內壁面 321: Second inner wall surface

33:結構 33: Structure

40:擋板 40:Baffle

41:第一擋板 41:First baffle

411:下表面 411: Lower surface

42:第二擋板 42:Second baffle

50:坩堝 50:Crucible

51:本體 51:Ontology

511:環壁 511: Ring wall

512:底壁 512: Bottom wall

52:上開口 52:Open the top

53:容置空間 53: Accommodation space

60:真空抽氣裝置 60: Vacuum extraction device

80:待反應材料 80: Materials to be reacted

Claims

一種用於生產矽材料的雙沉積腔設備，包括：一爐體；一冷卻夾套，設置於該爐體上方且該爐體相連通，該冷卻夾套在該爐體上方定義出一空間，且該冷卻夾套包括與該空間連通的一開口；一沉積裝置，包括至少一第一沉積基板以及至少一第二沉積基板，該第一沉積基板及該第二沉積基板並列地設置於該爐體上方與該冷卻夾套之間的該空間，該第一沉積基板及該第二沉積基板分別具有相對於一垂直軸向朝下地傾斜的一第一內壁面以及一第二內壁面，且該第一內壁面及該第二內壁面上形成有一非平坦區域，該非平坦區域是分別相對於該第一內壁面及該第二內壁面的一平面突出或凹陷的一結構，該結構是一個或多個的凸點、一個或多個的凹點、一個或多個的凸條、一個或多個的凹條或前述的組合；以及一真空抽氣裝置，與該冷卻夾套的該開口連通。 A dual deposition chamber equipment for the production of silicon materials, including: One furnace body; A cooling jacket is provided above the furnace body and communicates with the furnace body. The cooling jacket defines a space above the furnace body, and the cooling jacket includes an opening connected with the space; A deposition device, including at least a first deposition substrate and at least a second deposition substrate, the first deposition substrate and the second deposition substrate being arranged side by side in the space between the furnace body and the cooling jacket, the The first deposition substrate and the second deposition substrate respectively have a first inner wall surface and a second inner wall surface that are inclined downward relative to a vertical axis, and a non-linear structure is formed on the first inner wall surface and the second inner wall surface. Flat area. The non-flat area is a structure that protrudes or recesses relative to a plane of the first inner wall surface and the second inner wall surface respectively. The structure is one or more convex points, one or more concave points, One or more convex strips, one or more concave strips or a combination of the foregoing; and A vacuum evacuation device is connected to the opening of the cooling jacket.

如請求項1所述的設備，其中還包括至少一擋板，該擋板設置於該空間之中且位於該冷卻夾套的該開口與該沉積裝置之間。The equipment of claim 1, further comprising at least one baffle, the baffle being disposed in the space and between the opening of the cooling jacket and the deposition device.

如請求項1所述的設備，其中還包括一放置於該爐體內的坩堝，該坩堝包括一本體以及一上開口，該本體定義出一容置空間且包括一環壁、一底壁以及至少一連接在該環壁上而貫穿於該容置空間的輔助加熱肋。The equipment as claimed in claim 1, further comprising a crucible placed in the furnace, the crucible including a body and an upper opening, the body defining a receiving space and including a ring wall, a bottom wall and at least one Auxiliary heating ribs connected to the ring wall and penetrating the accommodation space.

一種用於生產矽材料的雙沉積腔設備，包括：一爐體；一冷卻夾套，設置於該爐體上方且該爐體相連通，該冷卻夾套在該爐體上方定義出一空間；一沉積裝置，包括至少一第一沉積基板以及至少一第二沉積基板，該第一沉積基板及該第二沉積基板並列地設置於該爐體上方與該冷卻夾套之間的該空間，該第一沉積基板及該第二沉積基板分別具有相對於一垂直軸向朝下地傾斜的一第一內壁面以及一第二內壁面，且該第一內壁面及該第二內壁面上形成有一非平坦區域，該非平坦區域是分別相對於該第一內壁面及該第二內壁面的一平面突出或凹陷的一結構，該結構是一個或多個的凸點、一個或多個的凹點、一個或多個的凸條、一個或多個的凹條或前述的組合；以及一鈍態氣體供應裝置，與該爐體的一充氣口連通。 A dual deposition chamber equipment for the production of silicon materials, including: One furnace body; A cooling jacket is disposed above the furnace body and communicates with the furnace body, and the cooling jacket defines a space above the furnace body; A deposition device, including at least a first deposition substrate and at least a second deposition substrate, the first deposition substrate and the second deposition substrate being arranged side by side in the space between the furnace body and the cooling jacket, the The first deposition substrate and the second deposition substrate respectively have a first inner wall surface and a second inner wall surface that are inclined downward relative to a vertical axis, and a non-linear structure is formed on the first inner wall surface and the second inner wall surface. Flat area. The non-flat area is a structure that protrudes or recesses relative to a plane of the first inner wall surface and the second inner wall surface respectively. The structure is one or more convex points, one or more concave points, One or more convex strips, one or more concave strips or a combination of the foregoing; and A passive gas supply device is connected with an air filling port of the furnace body.

如請求項4所述的設備，其中還包括至少一擋板，該擋板設置於該空間之中且位於該沉積裝置上方。The equipment of claim 4, further comprising at least one baffle, the baffle being disposed in the space and above the deposition device.

如請求項4所述的設備，其中還包括一放置於該爐體內的坩堝，該坩堝包括一本體以及一上開口，該本體定義出一容置空間且包括一環壁、一底壁以及至少一連接在該環壁上而貫穿於該容置空間的輔助加熱肋。The equipment according to claim 4, further comprising a crucible placed in the furnace body, the crucible including a body and an upper opening, the body defining a receiving space and including a ring wall, a bottom wall and at least one Auxiliary heating ribs connected to the ring wall and penetrating the accommodation space.

一種用於生產矽材料的雙沉積腔設備，包括：一爐體；一冷卻夾套，設置於該爐體上方且該爐體相連通，該冷卻夾套在該爐體上方定義出一空間，且該冷卻夾套包括與該空間連通的一開口；一沉積裝置，包括至少一第一沉積基板以及至少一第二沉積基板，該第一沉積基板及該第二沉積基板並列地設置於該爐體上方與該冷卻夾套之間的該空間，該第一沉積基板及該第二沉積基板分別具有相對於一垂直軸向朝下地傾斜的一第一內壁面以及一第二內壁面，且該第一內壁面及該第二內壁面上形成有一非平坦區域，該非平坦區域是分別相對於該第一內壁面及該第二內壁面的一平面突出或凹陷的一結構，該結構是一個或多個的凸點、一個或多個的凹點、一個或多個的凸條、一個或多個的凹條或前述的組合；一真空抽氣裝置，與該冷卻夾套的該開口連通；以及一鈍態氣體供應裝置，與該爐體的一充氣口連通。 A dual deposition chamber equipment for the production of silicon materials, including: One furnace body; A cooling jacket is provided above the furnace body and communicates with the furnace body. The cooling jacket defines a space above the furnace body, and the cooling jacket includes an opening connected with the space; A deposition device, including at least a first deposition substrate and at least a second deposition substrate, the first deposition substrate and the second deposition substrate being arranged side by side in the space between the furnace body and the cooling jacket, the The first deposition substrate and the second deposition substrate respectively have a first inner wall surface and a second inner wall surface that are inclined downward relative to a vertical axis, and a non-linear structure is formed on the first inner wall surface and the second inner wall surface. Flat area. The non-flat area is a structure that protrudes or recesses relative to a plane of the first inner wall surface and the second inner wall surface respectively. The structure is one or more convex points, one or more concave points, One or more convex strips, one or more concave strips or a combination of the foregoing; a vacuum evacuation device connected to the opening of the cooling jacket; and A passive gas supply device is connected with an air filling port of the furnace body.

如請求項7所述的設備，其中還包括至少一擋板，該擋板設置於該空間之中且位於該冷卻夾套的該開口與該沉積裝置之間。The equipment of claim 7, further comprising at least one baffle, the baffle being disposed in the space and between the opening of the cooling jacket and the deposition device.

如請求項7所述的設備，其中還包括一放置於該爐體內的坩堝，該坩堝包括一本體以及一上開口，該本體定義出一容置空間且包括一環壁、一底壁以及至少一連接在該環壁上而貫穿於該容置空間的輔助加熱肋。The equipment as claimed in claim 7, further comprising a crucible placed in the furnace body, the crucible including a body and an upper opening, the body defining a receiving space and including a ring wall, a bottom wall and at least one Auxiliary heating ribs connected to the ring wall and penetrating the accommodation space.