TWM640906U - Light-emitting structure - Google Patents

Light-emitting structure Download PDF

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TWM640906U
TWM640906U TW111213428U TW111213428U TWM640906U TW M640906 U TWM640906 U TW M640906U TW 111213428 U TW111213428 U TW 111213428U TW 111213428 U TW111213428 U TW 111213428U TW M640906 U TWM640906 U TW M640906U
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Taiwan
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light
unit
emitting
transmitting unit
emitting structure
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TW111213428U
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Chinese (zh)
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邢陳震崙
洪榮豪
楊詠鈞
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葳天科技股份有限公司
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Publication of TWM640906U publication Critical patent/TWM640906U/en

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Abstract

A light-emitting structure includes a carrying unit, a light-emitting unit and a light-transmitting unit. The light-emitting unit is arranged on the carrying unit, and includes a light-emitting surface. The light-transmitting unit directly contacts the light-emitting unit, and includes a first surface and a second surface opposite to each other. The first surface covers at least part of the light-emitting surface, and the second surface directly contacts a gas.

Description

發光結構 light emitting structure

本創作係有關一種發光結構,尤指可加強紅光輸出強度的一種發光結構。 This creation is about a light-emitting structure, especially a light-emitting structure that can enhance the output intensity of red light.

發光二極體(light-emitting diode,LED)為一種半導體元件,主要透過半導體化合物將電能轉換為光能以達到發光效果,因其具有壽命長、穩定性高及耗電量小等優點,所以目前已被廣泛地應用於照明。隨著藍、綠光晶片技術相對成熟,效率持續提升,為了能夠適配到專業照明之應用領域(例如,舞台劇場、藝術展覽或醫療器材應用等),考量到RGB混光應用與演色性指數(color rendering index,CRI)需求,紅光的輸出強度則相對來說較為重要。 Light-emitting diode (light-emitting diode, LED) is a semiconductor element, which mainly converts electrical energy into light energy through semiconductor compounds to achieve luminous effect. Because of its advantages of long life, high stability and low power consumption, it is Has been widely used in lighting. With the relatively mature technology of blue and green chips and the continuous improvement of efficiency, in order to be able to adapt to the application fields of professional lighting (such as stage theater, art exhibition or medical equipment application, etc.), RGB mixed light application and color rendering index should be considered (color rendering index, CRI) requirements, the output intensity of red light is relatively more important.

傳統技術多以膠材覆蓋封裝之上,除了可以達到保護晶片、金線不被外力破壞而失效外,還可用來改變發光角度與提升晶片亮度。 Traditional technology mostly covers the package with adhesive material, which can not only protect the chip and gold wire from failure due to external damage, but also be used to change the light-emitting angle and improve the brightness of the chip.

然而,隨著封裝技術進步、瓦數需求提高、封裝體積縮小與多晶多色等的應用,發展出嶄新的封裝型式。傳統早期的LED封裝形式,如插件式(lamp)、塑料有引腳晶片載體(plastic leaded chip carrier,簡稱為PLCC)支架式、或是表面黏著元件(surface mounted device,簡稱為SMD) 樣式,都會有膠材覆蓋於晶片之上,其用意為1.保護晶片、金線不被外力破壞而失效2.提升晶片亮度3.改變發光角度。然而無論傳統技術哪一種封裝,除藍光晶片+螢光粉轉換成白光LED外,單色光晶片上頭均不再做任何處理。此時,LED封裝亮度(lm or mW)即為裸晶本身的亮度。這樣的亮度依據波長的不同,一般約略會損失20~30%。 However, with the advancement of packaging technology, the increase in wattage requirements, the reduction of package size, and the application of polycrystalline multi-color, etc., new packaging types have been developed. Traditional early LED packaging forms, such as plug-in type (lamp), plastic leaded chip carrier (PLCC for short) bracket type, or surface mounted device (SMD for short) There will be an adhesive material covering the chip, which is intended to 1. protect the chip and the gold wire from failure due to external damage, 2. increase the brightness of the chip, and 3. change the luminous angle. However, no matter what kind of packaging is traditional, there is no need to do any processing on the monochromatic chip except that the blue chip + phosphor powder is converted into a white LED. At this time, the brightness of the LED package (lm or mW) is the brightness of the bare die itself. Such brightness generally loses about 20-30% depending on the wavelength.

為此,如何設計出一種發光結構,能夠提升亮度並不影響光學,來解決前述的技術問題,乃為本案創作人所研究的重要課題。 Therefore, how to design a light-emitting structure that can improve the brightness without affecting the optics to solve the aforementioned technical problems is an important topic studied by the creators of this project.

本創作之其中一目的在於提供一種發光結構,其可提升嶄新封裝型式之紅光亮度,達到結構簡單、容易生產且低生產成本之目的。 One of the purposes of this invention is to provide a light-emitting structure, which can increase the brightness of red light in a new packaging type, and achieve the purpose of simple structure, easy production and low production cost.

為達成前揭目的,本創作所提出的一種發光結構包含承載單元、發光單元以及透光單元。發光單元設置於承載單元之上,且包含出光面。透光單元直接地接觸發光單元,且包含彼此相對的第一面以及第二面。第一面覆設於至少部分出光面之上,且第二面直接地接觸氣體。 In order to achieve the purpose of the foregoing disclosure, a light-emitting structure proposed in this creation includes a carrying unit, a light-emitting unit, and a light-transmitting unit. The light emitting unit is arranged on the carrying unit and includes a light emitting surface. The light-transmissive unit directly contacts the light-emitting unit and includes a first surface and a second surface opposite to each other. The first surface covers at least part of the light-emitting surface, and the second surface directly contacts the gas.

在某些實施例中,透光單元覆設於發光單元的面積介於出光面之面積的0.8倍至1.2倍。 In some embodiments, the area covered by the light-transmissive unit on the light-emitting unit is 0.8 to 1.2 times the area of the light-emitting surface.

在某些實施例中,所述之發光結構更包含反射單元,反射單元設置於承載單元之上,且環設於發光單元之周緣 In some embodiments, the light-emitting structure further includes a reflection unit, the reflection unit is arranged on the carrying unit, and is arranged around the periphery of the light-emitting unit

在某些實施例中,反射單元包含白色膠體,且白色膠體環設於透光單元之周緣。 In some embodiments, the reflection unit includes white colloid, and the white colloid ring is disposed on the periphery of the light transmission unit.

在某些實施例中,透光單元之第二面形成為平面或依表面張力形成為弧面。 In some embodiments, the second surface of the light-transmitting unit is formed as a plane or as an arc surface according to surface tension.

在某些實施例中,所述之發光結構更包含透明罩體,透明罩體設置於承載單元之上,且罩設於發光單元以及透光單元之外。 In some embodiments, the light-emitting structure further includes a transparent cover, which is disposed on the carrying unit and covers the light-emitting unit and the light-transmitting unit.

在某些實施例中,透明罩體鄰近承載單元之周緣包含至少一透氣孔。 In some embodiments, the periphery of the transparent cover adjacent to the carrying unit includes at least one air hole.

在某些實施例中,氣體包含惰性氣體或大氣。 In certain embodiments, the gas comprises an inert gas or atmosphere.

在某些實施例中,承載單元包含基板或晶粒支架。 In some embodiments, the carrier unit includes a substrate or a die holder.

在某些實施例中,發光單元的峰值發射波長大於或等於600奈米,且透光單元的折射率大於或等於1.3。 In some embodiments, the peak emission wavelength of the light emitting unit is greater than or equal to 600 nm, and the refractive index of the light transmitting unit is greater than or equal to 1.3.

綜上所述,本創作之發光結構係藉由與發光單元直接接觸的透光單元,使得能量較低的紅光波長得以被捕獲且積聚於其中,且讓自透光單元輸出的紅光具有一定程度的光強度。進一步而言,對於能量較低的紅光波長而言,相對於直接入射至大氣的傳統方案,透光單元更提供了一個折射率變異較低的光學腔,從而避免了紅光之輸出能量的損失,且可以不需要針對螢光粉或螢光層進行配置,降低了生產難度與成本。 To sum up, the light-emitting structure of this invention uses the light-transmitting unit in direct contact with the light-emitting unit, so that the wavelength of red light with lower energy can be captured and accumulated in it, and the red light output from the light-transmitting unit has a A certain level of light intensity. Furthermore, for the wavelength of red light with lower energy, compared with the traditional scheme of directly incident into the atmosphere, the light-transmitting unit provides an optical cavity with lower refractive index variation, thereby avoiding the output energy of red light. Loss, and there is no need to configure phosphor powder or phosphor layer, which reduces production difficulty and cost.

為此,本創作所述之發光結構可提升嶄新封裝型式中紅光之輸出強度的技術問題,達到結構簡單、容易生產且低生產成本之目的。 For this reason, the light-emitting structure described in this invention can improve the technical problem of the output intensity of red light in a new packaging type, and achieve the purpose of simple structure, easy production and low production cost.

值得一提的是,這種在發光二極體之出光方向上不接觸封裝膠材而接觸氣體的形式可稱之為“空氣型(air-type)”的架構,此專利價值主要是為“空氣型(air-type)”做封裝技術以提升光效(例如,紅光增亮)。 It is worth mentioning that this type of structure that does not contact the encapsulant but contacts the gas in the light-emitting direction of the light-emitting diode can be called an "air-type" structure. The value of this patent is mainly for " Air-type (air-type)" is used as packaging technology to improve light efficiency (for example, red light enhancement).

為了能更進一步瞭解本創作為達成預定目的所採取之技術、手段及功效,請參閱以下有關本創作之詳細說明與附圖,相信本創作特徵與特點,當可由此得一深入且具體之瞭解,然而所附圖式僅提供參考與說明用,並非用來對本創作加以限制者。 In order to further understand the technology, means and effects of this creation to achieve the intended purpose, please refer to the following detailed description and drawings about this creation. I believe that the characteristics and characteristics of this creation should be able to gain a deep and specific understanding. , however, the accompanying drawings are provided for reference and illustration only, and are not intended to limit this creation.

1~5:發光結構 1~5: Light emitting structure

10、10a:承載單元 10, 10a: carrying unit

20:發光單元 20: Lighting unit

21:出光面 21: Light-emitting surface

30:透光單元 30: Translucent unit

31:第一面 31: The first side

32:第二面 32: The second side

40:透明罩體 40: Transparent cover

41:透氣孔 41: ventilation hole

50:反射單元 50: reflection unit

60:蓋板 60: cover plate

100:氣體 100: gas

200:空間 200: space

A:實驗值 A: Experimental value

B:趨勢線 B: Trendline

圖1A及圖1B為本創作第一實施例的發光結構的剖面示意圖;圖2為本創作第二實施例的發光結構的剖面示意圖;圖3為本創作第三實施例的發光結構的剖面示意圖;圖4為本創作第三實施例的發光結構的俯視示意圖;圖5為本創作第四實施例的發光結構的剖面示意圖;圖6為本創作第五實施例的發光結構的剖面示意圖;以及圖7為本創作發光結構之亮度比例與透光單元厚度的關係圖。 1A and FIG. 1B are schematic cross-sectional views of the light-emitting structure of the first embodiment of the invention; FIG. 2 is a schematic cross-sectional view of the light-emitting structure of the second embodiment of the invention; FIG. 3 is a schematic cross-sectional view of the light-emitting structure of the third embodiment of the invention ; FIG. 4 is a schematic top view of the light-emitting structure of the third embodiment of the present creation; FIG. 5 is a schematic cross-sectional view of the light-emitting structure of the fourth embodiment of the present creation; FIG. 6 is a schematic cross-sectional view of the light-emitting structure of the fifth embodiment of the present creation; FIG. 7 is a graph showing the relationship between the luminance ratio and the thickness of the light-transmitting unit of the inventive light-emitting structure.

以下係藉由特定的具體實施例說明本創作之實施方式,熟悉此技術之人士可由本說明書所揭示之內容輕易地瞭解本創作之其他優點及功效。本創作亦可藉由其他不同的具體實例加以施行或應用,本創作說明書中的各項細節亦可基於不同觀點與應用在不悖離本創作之精神下進行各種修飾與變更。 The implementation of this creation is described below through specific specific examples, and those who are familiar with this technology can easily understand other advantages and effects of this creation from the content disclosed in this specification. This creation can also be implemented or applied through other different specific examples, and the details in this creation manual can also be modified and changed based on different viewpoints and applications without departing from the spirit of this creation.

須知,本說明書所附圖式繪示之結構、比例、大小、元件數量等,均僅用以配合說明書所揭示之內容,以供熟悉此技術之人士瞭解與閱讀,並非用以限定本創作可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本創作所能產生之功效及所能達成之目的下,均應落在本創作所揭示之技術內容得能涵蓋之範圍內。 It should be noted that the structure, proportion, size, number of components, etc. shown in the drawings attached to this manual are only used to match the content disclosed in the manual for the understanding and reading of those familiar with this technology, and are not used to limit the possibilities of this creation. The limitations of implementation, so it has no technical significance. Any modification of structure, change of proportional relationship or adjustment of size, without affecting the effect and purpose of this creation, shall fall within the scope of this article. The technical content revealed by the creation must be within the scope covered.

茲有關本創作之技術內容及詳細說明,配合圖式說明如下。 Hereby, the technical content and detailed description of this creation are described as follows with the drawings.

圖1A及圖1B為本創作第一實施例的發光結構1的剖面示意圖。 1A and 1B are schematic cross-sectional views of a light emitting structure 1 according to a first embodiment of the present invention.

如圖1A及圖1B所示,本創作所提出之第一實施例的發光結構1包含承載單元10、發光單元20以及透光單元30。 As shown in FIG. 1A and FIG. 1B , the light-emitting structure 1 of the first embodiment of the present invention includes a carrying unit 10 , a light-emitting unit 20 and a light-transmitting unit 30 .

承載單元10係用以承載發光單元20以及透光單元30。 The carrying unit 10 is used for carrying the light emitting unit 20 and the light transmitting unit 30 .

在某些實施例中,承載單元10可包含氮化鋁、氧化鋁、聚對苯二甲酸乙二酯(positron emission tomography,PET)、雙馬來醯亞胺三嗪樹脂(bismaleimide triazine,亦可稱之為BT樹脂)或陶瓷等材料,然其非限制性。 In some embodiments, the carrying unit 10 may include aluminum nitride, aluminum oxide, polyethylene terephthalate (positron emission tomography, PET), bismaleimide triazine resin (bismaleimide triazine, or It is called BT resin) or materials such as ceramics, but it is not limiting.

在某些實施例中,所述承載單元10可以是印刷電路板(printed circuit board,PCB)、具線路化的陶瓷基板(ceramic substrate)、或晶粒支架(leadframe)等。進一步而言,如圖1A所示之的第一實施例中,承載單元10係呈平板狀之一基板,(亦可有碗杯之leadframe形式)然其非限制性。 In some embodiments, the carrying unit 10 may be a printed circuit board (PCB), a circuitized ceramic substrate, or a leadframe. Furthermore, in the first embodiment as shown in FIG. 1A , the carrying unit 10 is a plate-shaped substrate (there may also be a leadframe form of a bowl), but it is not limiting.

發光單元20設置於承載單元10之上,且包含出光面21。 The light emitting unit 20 is disposed on the carrying unit 10 and includes a light emitting surface 21 .

在某些實施例中,發光單元20係自承載單元10汲取電力並發光,例如藉由鋁、銀、銅、鎳、鈀、金等材料製成的導電線路汲取電力,亦可以藉由呈透明之導電材料(例如,氧化銦錫(indium tin oxide,ITO)等)材料製成的導電線路汲取電力,然其非限制性。 In some embodiments, the light emitting unit 20 draws power from the carrying unit 10 and emits light, for example, draws power through conductive lines made of aluminum, silver, copper, nickel, palladium, gold, etc. The conductive circuit made of conductive material (for example, indium tin oxide (ITO), etc.) draws power, but it is not limited.

在某些實施例中,發光單元20的峰值發射波長(peak emission wavelength,WLP)大於或等於600奈米,尤其是600奈米至680奈米之間,即發光單元20所輸出之光的視覺顏色為可見光範圍所對應的紅光,然其非限制性。 In some embodiments, the peak emission wavelength (peak emission wavelength, WLP) of the light emitting unit 20 is greater than or equal to 600 nanometers, especially between 600 nanometers and 680 nanometers. The color is red light corresponding to the visible light range, but it is not limiting.

在某些實施例中,發光單元20還可包含可見光範疇之紅光發光二極體(例如:鋁砷化鎵(AlGaAs)、砷化鎵磷化物(GaAsP)、磷化銦鎵鋁(AlGaInP)、磷化鎵摻雜氧化鋅(GaP:ZnO))、橙光發光二極體(例如:砷化鎵磷化物(GaAsP)、磷化銦鎵鋁(AlGaInP)、磷化鎵摻雜X(GaP:X))、黃光發光二極體(例如:砷化鎵磷化物(GaAsP)、磷化銦鎵鋁(AlGaInP)、磷化鎵摻雜氮(GaP:N))、綠光發光二極體(例如:銦氮化鎵(InGaN)、氮化鎵(GaN)、磷化鎵(GaP)、磷化銦鎵鋁(AlGaInP)、鋁磷化鎵(lGaP))、藍光發光二極體(例如:硒化鋅(ZnSe)、銦氮化鎵(InGaN)、碳化矽(SiC))、紫光發光二極體(例如:銦氮化鎵(InGaN)),以及可包含不可見光範疇的紅外光發光二極體(例如:砷化鎵(GaAs)、鋁砷化鎵(AlGaAs))或紫外光二極體(例如:鑽石(diamond)、氮化鋁(AlN)、鋁鎵氮化物(AlGaN)、氮化鋁鎵銦(AlGaInN))等,且發光二極體之形式亦可包含有機發光二極體(organic light-emitting diode,OLED),然其非限制性。 In some embodiments, the light emitting unit 20 may also include red light emitting diodes in the visible light range (for example: aluminum gallium arsenide (AlGaAs), gallium arsenide phosphide (GaAsP), indium gallium aluminum phosphide (AlGaInP) , gallium phosphide-doped zinc oxide (GaP: ZnO)), orange light-emitting diodes (for example: gallium arsenide phosphide (GaAsP), aluminum indium gallium phosphide (AlGaInP), gallium phosphide doped X (GaP : X)), yellow light-emitting diodes (for example: gallium arsenide phosphide (GaAsP), indium gallium aluminum phosphide (AlGaInP), gallium phosphide doped with nitrogen (GaP: N)), green light-emitting diodes Body (for example: indium gallium nitride (InGaN), gallium nitride (GaN), gallium phosphide (GaP), indium gallium aluminum phosphide (AlGaInP), aluminum gallium phosphide (lGaP)), blue light emitting diode ( For example: zinc selenide (ZnSe), indium gallium nitride (InGaN), silicon carbide (SiC)), purple light-emitting diodes (such as: indium gallium nitride (InGaN)), and infrared light that can include invisible light Light-emitting diodes (such as: gallium arsenide (GaAs), aluminum gallium arsenide (AlGaAs)) or ultraviolet light diodes (such as: diamond (diamond), aluminum nitride (AlN), aluminum gallium nitride (AlGaN), Aluminum Gallium Indium Nitride (AlGaInN), etc., and the form of the light emitting diode may also include organic light emitting diode (organic light-emitting diode, OLED), but it is not limited.

透光單元30直接地接觸發光單元20,且包含彼此相對的第一面31以及第二面32。進一步而言,第一面31覆設於至少部分出光面21 之上,且第二面32直接地接觸氣體100,這種在發光二極體之出光方向上不接觸封裝膠材而接觸氣體100的形式可稱之為“空氣型(air-type)”的架構。進一步而言,所述氣體100可包含惰性氣體或大氣,然其非限制性。 The light-transmitting unit 30 directly contacts the light-emitting unit 20 and includes a first surface 31 and a second surface 32 opposite to each other. Furthermore, the first surface 31 covers at least part of the light-emitting surface 21 above, and the second surface 32 is directly in contact with the gas 100, this form of contacting the gas 100 without contacting the packaging material in the light-emitting direction of the light-emitting diode can be called "air-type" architecture. Further, the gas 100 may include inert gas or atmosphere, but it is not limited.

在某些實施例中,透光單元30覆設於發光單元20的面積介於出光面21之面積的0.8倍至1.2倍。 In some embodiments, the area covered by the light-transmitting unit 30 on the light-emitting unit 20 is between 0.8 and 1.2 times the area of the light-emitting surface 21 .

在某些實施例中,透光單元30之第二面32形成為一平面或依表面張力(surface tension)形成為一弧面。進一步而言,如圖1B所示之的第一實施例中,透光單元30之第二面32係與發光單元20呈平行並列之一平面,然其非限制性。 In some embodiments, the second surface 32 of the transparent unit 30 is formed as a plane or as an arc surface according to surface tension. Further, in the first embodiment shown in FIG. 1B , the second surface 32 of the light-transmitting unit 30 is a plane parallel to the light-emitting unit 20 , but it is not limiting.

在某些實施例中,所述透光單元30的折射率大於或等於1.3,且透光單元30可包含石英、玻璃、陶瓷、矽膠、環氧樹酯或上述材料的所構成之矽膠與環氧樹脂組合物(silicone-epoxy),然其非限制性。 In some embodiments, the refractive index of the light-transmitting unit 30 is greater than or equal to 1.3, and the light-transmitting unit 30 may include quartz, glass, ceramics, silicone, epoxy resin, or silicone and rings composed of the above materials. Silicone-epoxy, but not limiting.

值得一提的是,本創作所述的透光單元30係同時地分別直接接觸發光單元20與氣體100,就以折射率來分析,大氣折射率對各種頻率的光都非常接近於1,例如在20℃且大氣壓力760mmHg之環境時的折射率為1.00027,而相對於石英、壓克力板或燧石玻璃等基材而言的折射率約介於1.45至1.9之間。對於光的傳輸而言,在折射率差異越大的狀態下傳輸會造成較多光強度之能量損失。為此,本創作引入了在發光單元20上直接覆設透光單元30的結構,且透光單元30的折射率介於發光單元20以及氣體100(例如,大氣或惰性氣體)的折射率之間,使得發光單元20的出光面21不直接接觸氣體100,讓光在自發光單元20傳輸至透光單元30且自透光單元30傳輸至氣體100之間時,具有最小的折射率差異以及最小的光 強度之能量損失,尤其對於發光單元20所輸出的峰值發射波長(WLP)大於或等於600奈米的光,本創作相對於未設置透光單元30之傳統結構可更增強10%至20%之光強度,例如可以是117%,然其非限制性 It is worth mentioning that the light-transmitting unit 30 described in this creation is in direct contact with the light-emitting unit 20 and the gas 100 at the same time, and it is analyzed by the refractive index. The atmospheric refractive index is very close to 1 for light of various frequencies, for example The refractive index is 1.00027 at 20°C and atmospheric pressure 760mmHg, and the refractive index relative to substrates such as quartz, acrylic plate or flint glass is between 1.45 and 1.9. For the transmission of light, transmission in a state with a greater difference in refractive index will result in more energy loss of light intensity. For this reason, this creation introduces a structure in which the light-transmitting unit 30 is directly covered on the light-emitting unit 20, and the refractive index of the light-transmitting unit 30 is between the light-emitting unit 20 and the refractive index of the gas 100 (for example, the atmosphere or an inert gas). , so that the light-emitting surface 21 of the light-emitting unit 20 does not directly contact the gas 100, so that when the light is transmitted from the light-emitting unit 20 to the light-transmitting unit 30 and from the light-transmitting unit 30 to the gas 100, there is a minimum difference in refractive index and minimal light The energy loss of intensity, especially for the light output by the light-emitting unit 20 with a peak emission wavelength (WLP) greater than or equal to 600 nanometers, can be enhanced by 10% to 20% in this invention compared to the traditional structure without the light-transmitting unit 30 Light intensity, for example can be 117%, but its non-limiting

為此,本創作之發光結構1係藉由與發光單元20直接接觸的透光單元30,使得能量較低的紅光波長(例如,大於或等於600奈米)得以被捕獲且積聚於其中(即透光單元30的第一面31與第二面32之間),且讓自透光單元30輸出的紅光具有一定程度的光強度。進一步而言,對於能量較低的紅光波長而言,相對於直接入射至大氣的傳統方案,透光單元30更提供了一個折射率變異較低的光學腔,從而避免了紅光之輸出能量的損失,用以提升嶄新封裝型式中紅光之輸出強度,達到結構簡單、容易生產且低生產成本之目的。 For this reason, the light-emitting structure 1 of the present invention uses the light-transmitting unit 30 in direct contact with the light-emitting unit 20, so that the red light wavelength with lower energy (for example, greater than or equal to 600 nanometers) can be captured and accumulated therein ( That is, between the first surface 31 and the second surface 32 of the light-transmitting unit 30 ), and the red light output from the light-transmitting unit 30 has a certain degree of light intensity. Furthermore, for the wavelength of red light with lower energy, compared with the traditional scheme of directly incident into the atmosphere, the light-transmitting unit 30 provides an optical cavity with a lower refractive index variation, thereby avoiding the output energy of red light The loss is used to increase the output intensity of the red light in the new packaging type, so as to achieve the purpose of simple structure, easy production and low production cost.

圖2為本創作第二實施例的發光結構2的剖面示意圖。 FIG. 2 is a schematic cross-sectional view of a light emitting structure 2 according to a second embodiment of the present invention.

請一併參閱圖1A至圖2,本創作所述之第二實施例的發光結構2與前述第一實施例的發光結構1大致相同,惟透光單元30之第二面32依表面張力(surface tension)形成為一弧面,然其非限制性。 Please refer to FIG. 1A to FIG. 2 together. The light-emitting structure 2 of the second embodiment described in this creation is substantially the same as the light-emitting structure 1 of the first embodiment described above, except that the second surface 32 of the light-transmitting unit 30 depends on the surface tension ( surface tension) is formed as an arc, but it is not limiting.

為此,本創作之發光結構2係藉由與發光單元20直接接觸的透光單元30,使得能量較低的紅光波長(例如,大於或等於600奈米)得以被捕獲且積聚於其中(即透光單元30的第一面31與第二面32之間),且讓自透光單元30輸出的紅光具有一定程度的光強度。進一步而言,對於能量較低的紅光波長而言,相對於直接入射至大氣的傳統方案,透光單元30更提供了一個折射率變異較低的光學腔,從而避免了紅光之輸出能量的損 失,用以提升嶄新封裝型式中紅光之輸出強度,達到結構簡單、容易生產且低生產成本之目的。 For this reason, the light-emitting structure 2 of the present invention uses the light-transmitting unit 30 in direct contact with the light-emitting unit 20, so that the red light wavelength with lower energy (for example, greater than or equal to 600 nanometers) can be captured and accumulated therein ( That is, between the first surface 31 and the second surface 32 of the light-transmitting unit 30 ), and the red light output from the light-transmitting unit 30 has a certain degree of light intensity. Furthermore, for the wavelength of red light with lower energy, compared with the traditional scheme of directly incident into the atmosphere, the light-transmitting unit 30 provides an optical cavity with a lower refractive index variation, thereby avoiding the output energy of red light loss of It is used to increase the output intensity of the red light in the new packaging type, so as to achieve the purpose of simple structure, easy production and low production cost.

圖3為本創作第三實施例的發光結構3的剖面示意圖;圖4為本創作第三實施例的發光結構3的俯視示意圖。 FIG. 3 is a schematic cross-sectional view of the light emitting structure 3 of the third embodiment of the present invention; FIG. 4 is a schematic top view of the light emitting structure 3 of the third embodiment of the present invention.

請一併參閱圖3及圖4,本創作所述之第三實施例的發光結構3與前述第一實施例的發光結構1以及前述第二實施例的發光結構2大致相同,惟所述之發光結構3可更包含透明罩體40。 Please refer to FIG. 3 and FIG. 4 together. The light emitting structure 3 of the third embodiment described in this creation is substantially the same as the light emitting structure 1 of the first embodiment and the light emitting structure 2 of the second embodiment described above. The light emitting structure 3 may further include a transparent cover 40 .

在某些實施例中,所述透明罩體40設置於承載單元10之上,且罩設於發光單元20以及透光單元30之外,用以保護發光單元20以及透光單元30,然其非限制性。 In some embodiments, the transparent cover 40 is disposed on the carrying unit 10 and outside the light-emitting unit 20 and the light-transmitting unit 30 to protect the light-emitting unit 20 and the light-transmitting unit 30 . non-restrictive.

在某些實施例中,透明罩體40可包含玻璃、石英、藍寶石等…,然其非限制性。 In some embodiments, the transparent cover 40 may include glass, quartz, sapphire, etc. . . . but it is not limiting.

在某些實施例中,透明罩體40鄰近承載單元10之周緣包含至少一透氣孔41,用以使氣體100(例如,大氣或惰性氣體)於透明罩體40之內與外進行流通,以對發光單元20進行冷卻,增加發光單元20的壽命與可靠度,然其非限制性。 In some embodiments, the periphery of the transparent cover 40 adjacent to the carrier unit 10 includes at least one air hole 41 for allowing the gas 100 (for example, atmospheric or inert gas) to circulate inside and outside the transparent cover 40, so as to Cooling the light-emitting unit 20 increases the lifetime and reliability of the light-emitting unit 20 , but it is not limiting.

為此,本創作之發光結構3係藉由與發光單元20直接接觸的透光單元30,使得能量較低的紅光波長(例如,大於或等於600奈米)得以被捕獲且積聚於其中(即透光單元30的第一面31與第二面32之間),且讓自透光單元30輸出的紅光具有一定程度的光強度。進一步而言,對於能量較低的紅光波長而言,相對於直接入射至大氣的傳統方案,透光單元30更提供了一個折射率變異較低的光學腔,從而避免了紅光之輸出能量的損 失,用以提升嶄新封裝型式中紅光之輸出強度,達到結構簡單、容易生產且低生產成本之目的。 For this reason, the light-emitting structure 3 of the present invention uses the light-transmitting unit 30 in direct contact with the light-emitting unit 20, so that the red light wavelength with lower energy (for example, greater than or equal to 600 nanometers) can be captured and accumulated therein ( That is, between the first surface 31 and the second surface 32 of the light-transmitting unit 30 ), and the red light output from the light-transmitting unit 30 has a certain degree of light intensity. Furthermore, for the wavelength of red light with lower energy, compared with the traditional scheme of directly incident into the atmosphere, the light-transmitting unit 30 provides an optical cavity with a lower refractive index variation, thereby avoiding the output energy of red light loss of It is used to increase the output intensity of the red light in the new packaging type, so as to achieve the purpose of simple structure, easy production and low production cost.

進一步而言,在某些實施例中,於發光單元20以及透光單元30之外可罩設透明罩體40,用以保護發光單元20以及透光單元30。 Furthermore, in some embodiments, a transparent cover 40 may be provided outside the light emitting unit 20 and the light transmitting unit 30 to protect the light emitting unit 20 and the light transmitting unit 30 .

圖5為本創作第四實施例的發光結構4的剖面示意圖。 FIG. 5 is a schematic cross-sectional view of a light emitting structure 4 according to a fourth embodiment of the present invention.

請參閱圖5,本創作所述之第四實施例的發光結構4與前述第一實施例的發光結構1大致相同,惟所述發光結構4更包含反射單元50,且承載單元10a係呈一晶粒支架(leadframe),且leadframe可具碗杯構造,承載單元10a中央位置承載發光單元20以及透光單元30。 Please refer to FIG. 5 , the light emitting structure 4 of the fourth embodiment described in the present invention is substantially the same as the light emitting structure 1 of the aforementioned first embodiment, except that the light emitting structure 4 further includes a reflective unit 50, and the carrying unit 10a is a A leadframe, and the leadframe may have a bowl structure, and the central position of the carrying unit 10 a carries the light emitting unit 20 and the light transmitting unit 30 .

在某些實施例中,反射單元50可包含呈白色之具高反射率的高分子材料或金屬氧化物(例如,二氧化鈦TiO2等)所構成的白色膠體,且白色膠體環設於發光單元20以及透光單元30之周緣,藉此提高發光單元20之周緣的反射率,避免部分光能量由發光單元20之周緣逸散而造成光強度之能量耗損,然其非限制性。 In some embodiments, the reflective unit 50 may comprise a white colloid made of a white polymer material with high reflectivity or a metal oxide (for example, titanium dioxide TiO 2 , etc.), and the white colloid ring is arranged on the light emitting unit 20 And the periphery of the light-transmitting unit 30, so as to improve the reflectivity of the periphery of the light-emitting unit 20, and avoid part of the light energy from escaping from the periphery of the light-emitting unit 20 to cause energy loss of light intensity, but it is not limiting.

在某些實施例中,若為碗杯Lead Frame則無此蓋板結構設計,因為會造成光損,蓋板60覆設於承載單元10a之上,用以保護發光單元20、透光單元30以及反射單元50,且蓋板60與承載單元10a、透光單元30以及反射單元50之間形成容置氣體100的空間200,然其非限制性。 In some embodiments, if it is a bowl lead frame, there is no such cover plate structure design, because it will cause light loss, and the cover plate 60 is covered on the carrying unit 10a to protect the light emitting unit 20 and the light transmitting unit 30 And the reflection unit 50 , and the space 200 for accommodating the gas 100 is formed between the cover plate 60 , the carrying unit 10 a , the light transmission unit 30 and the reflection unit 50 , but it is not limiting.

為此,本創作之發光結構4係藉由與發光單元20直接接觸的透光單元30,使得能量較低的紅光波長(例如,大於或等於600奈米)得以被捕獲且積聚於其中(即透光單元30的第一面31與第二面32之間),且讓自透光單元30輸出的紅光具有一定程度的光強度。進一步而言,對於能量 較低的紅光波長而言,相對於直接入射至大氣的傳統方案,透光單元30更提供了一個折射率變異較低的光學腔,從而避免了紅光之輸出能量的損失,用以提升嶄新封裝型式中紅光之輸出強度,達到結構簡單、容易生產且低生產成本之目的。 For this reason, the light-emitting structure 4 of the present invention uses the light-transmitting unit 30 in direct contact with the light-emitting unit 20, so that the lower-energy red light wavelength (for example, greater than or equal to 600 nanometers) can be captured and accumulated therein ( That is, between the first surface 31 and the second surface 32 of the light-transmitting unit 30 ), and the red light output from the light-transmitting unit 30 has a certain degree of light intensity. Furthermore, for energy For the lower wavelength of red light, compared with the traditional scheme of directly entering the atmosphere, the light-transmitting unit 30 provides an optical cavity with a lower refractive index variation, thereby avoiding the loss of the output energy of the red light and improving the output energy of the red light. The output intensity of the red light in the new packaging type achieves the purpose of simple structure, easy production and low production cost.

值得一提的是,本創作所述之發光結構4包含環設於發光單元20之周緣的反射單元50,藉此可避免發光單元20所輸出之部分光由發光單元20的側壁逸散而造成能量浪費,反射單元50限縮了發光單元20的發光角度,且可以讓更多的光進入透光單元30中,使得本創作之發光結構4的照度相較於現有技術的照明產品可具有更高的照度。 It is worth mentioning that the light-emitting structure 4 described in this invention includes a reflective unit 50 arranged around the periphery of the light-emitting unit 20, thereby preventing part of the light output by the light-emitting unit 20 from escaping from the side walls of the light-emitting unit 20 Energy is wasted, the reflective unit 50 limits the luminous angle of the luminous unit 20, and allows more light to enter the light-transmitting unit 30, so that the illuminance of the luminous structure 4 of the present invention can have a higher illuminance than the lighting products of the prior art. High illuminance.

在某些實施例中,本創作之發光結構4相較於為採用反射單元50之結構達成照度提高至少10%之目的。 In some embodiments, the light emitting structure 4 of the present invention achieves the purpose of increasing the illuminance by at least 10% compared with the structure using the reflective unit 50 .

圖6為本創作第五實施例的發光結構5的剖面示意圖。 FIG. 6 is a schematic cross-sectional view of a light emitting structure 5 according to a fifth embodiment of the present invention.

請參閱圖6,本創作所述之第五實施例的發光結構5與前述第四實施例的發光結構4大致相同,惟透光單元30之第二面32依表面張力形成為一弧面,且反射單元50僅環設於發光單元20之周緣而未接觸透光單元30,使得反射單元50於發光單元20以及承載單元10a之間依表面張力形成為另一弧面,然其非限制性。 Please refer to Fig. 6, the light-emitting structure 5 of the fifth embodiment described in this creation is substantially the same as the light-emitting structure 4 of the aforementioned fourth embodiment, except that the second surface 32 of the light-transmitting unit 30 is formed into an arc surface according to surface tension, And the reflective unit 50 is only arranged around the periphery of the light-emitting unit 20 without contacting the light-transmitting unit 30, so that the reflective unit 50 forms another arc surface between the light-emitting unit 20 and the carrying unit 10a according to surface tension, but it is not limiting .

為此,本創作之發光結構5係藉由與發光單元20直接接觸的透光單元30,使得能量較低的紅光波長(例如,大於或等於600奈米)得以被捕獲且積聚於其中(即透光單元30的第一面31與第二面32之間),且讓自透光單元30輸出的紅光具有一定程度的光強度。進一步而言,對於能量較低的紅光波長而言,相對於直接入射至大氣的傳統方案,透光單元30 更提供了一個折射率變異較低的光學腔,從而避免了紅光之輸出能量的損失,用以提升嶄新封裝型式中紅光之輸出強度,達到結構簡單、容易生產且低生產成本之目的。 For this reason, the light-emitting structure 5 of the present invention uses the light-transmitting unit 30 in direct contact with the light-emitting unit 20, so that the red light wavelength with lower energy (for example, greater than or equal to 600 nanometers) can be captured and accumulated therein ( That is, between the first surface 31 and the second surface 32 of the light-transmitting unit 30 ), and the red light output from the light-transmitting unit 30 has a certain degree of light intensity. Furthermore, for the wavelength of red light with lower energy, compared with the traditional scheme of directly incident into the atmosphere, the light-transmitting unit 30 It also provides an optical cavity with low variation in refractive index, thereby avoiding the loss of output energy of red light, which is used to increase the output intensity of red light in a new package type, and achieves the purpose of simple structure, easy production and low production cost.

值得一提的是,本創作所述之發光結構5包含環設於發光單元20之周緣的反射單元50,藉此可避免發光單元20所輸出之部分光由發光單元20的側壁逸散而造成能量浪費,反射單元50限縮了發光單元20的發光角度,且可以讓更多的光進入透光單元30中,使得本創作之發光結構5的照度相較於現有技術的照明產品可具有更高的照度。 It is worth mentioning that the light-emitting structure 5 described in the present invention includes a reflective unit 50 arranged around the periphery of the light-emitting unit 20, thereby preventing part of the light output by the light-emitting unit 20 from escaping from the side walls of the light-emitting unit 20. Energy is wasted, the reflective unit 50 limits the luminous angle of the luminous unit 20, and allows more light to enter the light-transmitting unit 30, so that the illuminance of the luminous structure 5 of the present invention can be higher than that of the lighting products in the prior art. High illuminance.

圖7為本創作發光結構1~5之亮度比例與透光單元30厚度的關係圖。 FIG. 7 is a graph showing the relationship between the luminance ratios of light-emitting structures 1-5 and the thickness of the light-transmitting unit 30 of the present invention.

請一併參閱圖1A至圖7,透光單元30係用以將發光單元20所輸出的光積聚於其中,且使得自透光單元30輸出的光具有一定程度的光強度,如圖7所示之實驗值A以及趨勢線B。進一步而言,可將透光單元30聯想成是光學共振腔(optical resonator),當擴展了光學共振腔的腔室容積時,即可以積聚更多的光能量,故當適當地增加透光單元30的厚度,可增加所積聚之光能量,從而可以更增加自透光單元30輸出的光強度。尤其是,對應於能量較低的紅光(例如,介於600奈米至680奈米之間)而言,適當地增加透光單元30的厚度(例如,可介於0.05mm至1.0mm之間)可以更顯著的提升其光強度,例如亮度可提升至介於101%至120%之間,然其非限制性。 Please refer to FIG. 1A to FIG. 7 together. The light-transmitting unit 30 is used to accumulate the light output by the light-emitting unit 20 therein, and make the light output from the light-transmitting unit 30 have a certain degree of light intensity, as shown in FIG. 7 The experimental value A and the trend line B are shown. Further, the light-transmitting unit 30 can be associated with an optical resonator. When the volume of the optical resonator is expanded, more light energy can be accumulated, so when the light-transmitting unit is appropriately increased The thickness of 30 can increase the accumulated light energy, thereby further increasing the light intensity output from the light-transmitting unit 30 . Especially, corresponding to the red light with lower energy (for example, between 600 nm and 680 nm), the thickness of the light-transmitting unit 30 is appropriately increased (for example, it can be between 0.05 mm and 1.0 mm) Between) can increase its light intensity more significantly, for example, the brightness can be increased to between 101% and 120%, but it is not limited.

綜上所述,本創作之發光結構係藉由與發光單元直接接觸的透光單元,使得能量較低的紅光波長(例如,大於或等於600奈米)得以被 捕獲且積聚於其中,且讓自透光單元輸出的紅光具有一定程度的光強度。進一步而言,對於能量較低的紅光波長而言,相對於直接入射至大氣的傳統方案,透光單元更提供了一個折射率變異較低的光學腔,從而避免了紅光之輸出能量的損失,用以提升嶄新封裝型式中紅光之輸出強度,達到結構簡單、容易生產且低生產成本之目的。 To sum up, the light-emitting structure of this invention uses the light-transmitting unit in direct contact with the light-emitting unit, so that the wavelength of red light with lower energy (for example, greater than or equal to 600 nanometers) can be detected Capture and accumulate in it, and let the red light output from the light-transmitting unit have a certain degree of light intensity. Furthermore, for the wavelength of red light with lower energy, compared with the traditional scheme of directly incident into the atmosphere, the light-transmitting unit provides an optical cavity with lower refractive index variation, thereby avoiding the output energy of red light. The loss is used to increase the output intensity of the red light in the new packaging type, so as to achieve the purpose of simple structure, easy production and low production cost.

在某些實施例中,於發光單元以及透光單元之外可罩設透明罩體,用以保護發光單元以及透光單元。並且,透明罩體鄰近承載單元之周緣包含至少一透氣孔,用以使氣體(例如,大氣或惰性氣體)於透明罩體之內與外進行流通,以對發光單元進行冷卻,增加發光單元的壽命與可靠度。 In some embodiments, a transparent cover can be placed outside the light-emitting unit and the light-transmitting unit to protect the light-emitting unit and the light-transmitting unit. Moreover, the periphery of the transparent cover adjacent to the carrying unit includes at least one air hole for allowing gas (for example, atmosphere or inert gas) to circulate inside and outside the transparent cover, so as to cool the light-emitting unit and increase the light-emitting unit. longevity and reliability.

在某些實施例中,本創作所述之發光結構包含環設於發光單元之周緣的反射單元,藉此可避免發光單元所輸出之部分光由發光單元的側壁逸散而造成能量浪費,反射單元限縮了發光單元的發光角度,且可以讓更多的光進入透光單元中,使得本創作之發光結構的照度相較於現有技術的照明產品可具有更高的照度。 In some embodiments, the light-emitting structure described in the present invention includes a reflection unit arranged around the periphery of the light-emitting unit, thereby avoiding energy waste caused by part of the light output by the light-emitting unit escaping from the side wall of the light-emitting unit, reflecting The unit narrows the luminous angle of the luminous unit and allows more light to enter the light-transmitting unit, so that the illuminance of the luminous structure of the present invention can have higher illuminance than the lighting products of the prior art.

值得一提的是,還可藉由適當地增加透光單元的厚度,可增加所積聚之光能量,而可以更增加自透光單元輸出的光強度。尤其是,對應於能量較低的紅光(例如,介於600奈米至680奈米之間)而言,適當地增加透光單元的厚度可以更顯著的提升其光強度。 It is worth mentioning that by appropriately increasing the thickness of the light-transmitting unit, the accumulated light energy can be increased, and the light intensity output from the light-transmitting unit can be further increased. Especially, for red light with lower energy (for example, between 600 nm and 680 nm), appropriately increasing the thickness of the light-transmitting unit can significantly increase its light intensity.

為此,本創作所述之發光結構可解決無封裝膠材增亮之嶄新封裝型式中紅光亮度問題,藉此提升其之輸出強度,達到結構簡單、容易生產且低生產成本之目的。 For this reason, the light-emitting structure described in this creation can solve the problem of red light brightness in the new packaging type without encapsulation material to enhance the brightness, so as to improve its output intensity, and achieve the purpose of simple structure, easy production and low production cost.

以上所述,僅為本創作較佳具體實施例之詳細說明與圖式,惟本創作之特徵並不侷限於此,並非限制本創作,本創作之所有範圍應以下述之申請專利範圍為準,凡合於本創作申請專利範圍之精神與其類似變化之實施例,皆應包括於本創作之範疇中,任何熟悉該項技藝者在本創作之領域內,可輕易思及之變化或修飾皆可涵蓋在以下本案之專利範圍。 The above is only a detailed description and diagram of a preferred embodiment of this creation, but the characteristics of this creation are not limited to this, and it does not limit this creation. All scope of this creation should be subject to the scope of the following patent application , all embodiments that conform to the spirit of the patent scope of this creation and its similar changes should be included in the scope of this creation, and any changes or modifications that can be easily conceived by anyone familiar with the art in the field of this creation are all Can be covered in the scope of the following patents in this case.

1:發光結構 1: Luminous structure

10:承載單元 10: Bearing unit

20:發光單元 20: Lighting unit

30:透光單元 30: Translucent unit

32:第二面 32: The second side

100:氣體 100: gas

Claims (10)

一種發光結構,包含:一承載單元;一發光單元,設置於該承載單元之上,且包含一出光面;以及一透光單元,直接地接觸該發光單元,且包含彼此相對的一第一面以及一第二面;其中,該第一面覆設於至少部分該出光面之上,且該第二面直接地接觸一氣體。 A light-emitting structure, comprising: a carrying unit; a light-emitting unit disposed on the carrying unit and including a light-emitting surface; and a light-transmitting unit directly contacting the light-emitting unit and including a first surface opposite to each other and a second surface; wherein, the first surface covers at least part of the light-emitting surface, and the second surface directly contacts a gas. 如請求項1所述之發光結構,其中,該透光單元覆設於該發光單元的面積介於該出光面之面積的0.8倍至1.2倍。 The light-emitting structure according to claim 1, wherein the area covered by the light-transmitting unit on the light-emitting unit is between 0.8 times and 1.2 times the area of the light-emitting surface. 如請求項1所述之發光結構,更包含:一反射單元,設置於該承載單元之上,且環設於該發光單元之周緣。 The light-emitting structure according to claim 1 further includes: a reflective unit disposed on the carrying unit and surrounding the periphery of the light-emitting unit. 如請求項3所述之發光結構,其中,該反射單元包含一白色膠體,且該白色膠體環設於該透光單元之周緣。 The light-emitting structure according to claim 3, wherein the reflective unit includes a white colloid, and the white colloid ring is disposed on the periphery of the light-transmitting unit. 如請求項1所述之發光結構,其中,該透光單元之該第二面形成為一平面或依表面張力形成為一弧面。 The light-emitting structure according to claim 1, wherein the second surface of the light-transmitting unit is formed as a plane or as an arc surface according to surface tension. 如請求項1所述之發光結構,更包含:一透明罩體,設置於該承載單元之上,且罩設於該發光單元以及該透光單元之外。 The light-emitting structure according to claim 1 further includes: a transparent cover disposed on the carrying unit and covering the light-emitting unit and the light-transmitting unit. 如請求項6所述之發光結構,其中,該透明罩體鄰近該承載單元之周緣包含至少一透氣孔。 The light-emitting structure according to claim 6, wherein the transparent cover includes at least one ventilation hole adjacent to the periphery of the carrying unit. 如請求項1所述之發光結構,其中,該氣體包含一惰性氣體或一大氣。 The light emitting structure according to claim 1, wherein the gas includes an inert gas or an atmosphere. 如請求項1所述之發光結構,其中,該承載單元包含一基板或一晶粒支架。 The light emitting structure according to claim 1, wherein the carrying unit includes a substrate or a die holder. 如請求項1所述之發光結構,其中,該發光單元的峰值發射波長大於或等於600奈米,且該透光單元的折射率大於或等於1.3。 The light-emitting structure according to claim 1, wherein the peak emission wavelength of the light-emitting unit is greater than or equal to 600 nm, and the refractive index of the light-transmitting unit is greater than or equal to 1.3.
TW111213428U 2022-12-06 2022-12-06 Light-emitting structure TWM640906U (en)

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