TWM629562U - Improved leakage-proof and heat dissipation structure - Google Patents
Improved leakage-proof and heat dissipation structure Download PDFInfo
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一種防漏散熱結構包括第一背膠層、絕緣貼片、固定層、高導熱係 數材料層與散熱器。第一背膠層中間區域為第一開口，第一背膠層貼合於晶片本體上且熱源穿透於第一開口。絕緣貼片中間區域為第二孔洞開口，絕緣貼片貼合於第一背膠層之上且熱源穿透於孔洞開口。固定層中間區域為第二孔洞開口，固定層貼合於絕緣貼片之上，固定層之內部兩側各具有一第一凹槽空間。高導熱係數材料層設置於第二孔洞開口之內且其下表面之中間區域貼合，高導熱係數材料層之上表面與固定層之上表面平行。散熱器之部分貼合於該第二背膠層，且其底部具有複數個儲存凹槽。 An anti-leakage heat dissipation structure includes a first adhesive layer, an insulating patch, a fixed layer, a high thermal conductivity system Several material layers and heat sinks. The middle area of the first adhesive layer is a first opening, the first adhesive layer is attached to the chip body, and the heat source penetrates through the first opening. The middle area of the insulating patch is the opening of the second hole, the insulating patch is attached on the first adhesive layer, and the heat source penetrates through the opening of the hole. The middle area of the fixing layer is the opening of the second hole, the fixing layer is attached on the insulating patch, and the inner two sides of the fixing layer each have a first groove space. The high thermal conductivity material layer is disposed in the opening of the second hole and the middle area of the lower surface is attached, and the upper surface of the high thermal conductivity material layer is parallel to the upper surface of the fixing layer. A part of the heat sink is attached to the second adhesive layer, and the bottom of the heat sink has a plurality of storage grooves.
Description
一種散熱結構，尤指一種防漏散熱的改良結構。 A heat dissipation structure, especially an improved structure for preventing leakage and heat dissipation.
按，目前常見之各式電子元件均朝向微型化方向研發設計，惟各式電子元件因縮小化及效能大幅提升等諸多因素，亦伴隨著容易於實際運作過程中產生高熱，影響整體運作效能。因此，必需利用習知微均溫板進行散熱。習用電子裝置的散熱結構由散熱片設置於電子元件上，再利用風扇單元導引氣流至機殼外部。但由於機殼內部之各元件排列緊密，發熱源散發的熱量無法有效地往外排出，造成機殼內部產生溫升效應，加上熱量不斷累積的惡性循環下，若機殼內部的溫度無法保持在正常範圍，會影響整個電子裝置運作的可靠度及使用壽命，且會造成漏電的問題與超頻時溫度過高的問題。此外，為提高較好的散熱效率，需使用較高導熱係數的高導熱係數材料層，但高導熱係數材料層相變時外溢會導致主機板短路問題，且熱源發熱位置不均勻也會造成的散熱不穩定現象。 According to this, all kinds of electronic components that are common at present are developed and designed in the direction of miniaturization. However, due to various factors such as miniaturization and substantial improvement of performance, various electronic components are also prone to generate high heat during actual operation, which affects the overall operation performance. Therefore, it is necessary to use the conventional micro-thermostat to dissipate heat. In the heat dissipation structure of conventional electronic devices, heat dissipation fins are arranged on the electronic components, and then the fan unit is used to guide the air flow to the outside of the casing. However, due to the close arrangement of the components inside the casing, the heat emitted by the heat source cannot be effectively discharged to the outside, resulting in a temperature rise effect inside the casing. The normal range will affect the reliability and service life of the entire electronic device, and will cause leakage problems and excessive temperature during overclocking. In addition, in order to improve the heat dissipation efficiency, a high thermal conductivity material layer with higher thermal conductivity needs to be used. However, the overflow of the high thermal conductivity material layer during the phase transition will cause the short circuit of the motherboard, and the uneven heating position of the heat source will also cause Thermal instability.
此外，在逐步進入後摩爾定律時代後，晶圓代工大廠的發展重心，也逐漸從過去追求更先進奈米製程，轉向封裝技術的創新。由於高度性能計算(high-performance computing,HPC)晶片的需求正在急遽增加，因此，數據中心和雲端計算基礎架構變得至關重要，尤其是可支持新的高性能技術的AI和5G設 備。但這些設備面臨的挑戰是，該設備及其多核心架構的高效能，將會附帶有高寬頻密度和低延遲的問題。而異質整合成為HPC晶片需求飆升的因素，並為3D IC封裝技術打開嶄新的一頁。矽通孔技術(TSV)實現Die與Die間的垂直互連，通過在Si上打通孔進行晶片間的互連，無需引線鍵合，有效縮短互連線長度，減少信號傳輸延遲和損失，提高信號速度和帶寬，降低功耗和封裝體積，是實現多功能、高性能、高可靠性且更輕、更薄、更小的晶片系統級封裝。由於3D TSV封裝工藝在設計、量產、測試及供應鏈等方面還不成熟，且工藝成本較高，且3D TSV封裝技術的內部封裝的問題會使高導熱材料層產生泵出(Pump out)現象，進而影響晶片的整體效能。 In addition, after gradually entering the post-Moore's Law era, the development focus of large wafer foundries has gradually shifted from the pursuit of more advanced nanometer processes in the past to the innovation of packaging technology. As the demand for high-performance computing (HPC) chips is rapidly increasing, data center and cloud computing infrastructure is becoming critical, especially for AI and 5G devices that can support new high-performance technologies ready. But the challenge for these devices is that the high performance of the device and its multi-core architecture will come with high bandwidth density and low latency. Heterogeneous integration has become a factor for the soaring demand for HPC chips, and has opened a new page for 3D IC packaging technology. Through silicon via technology (TSV) realizes the vertical interconnection between Die and Die. By drilling through holes on Si for interconnection between wafers, wire bonding is not required, which effectively shortens the length of interconnect lines, reduces signal transmission delay and loss, and improves Signal speed and bandwidth, reduce power consumption and package size, is to achieve multi-function, high performance, high reliability and lighter, thinner, smaller chip system-in-package. Because the 3D TSV packaging technology is not mature in terms of design, mass production, testing and supply chain, and the process cost is high, and the internal packaging problem of the 3D TSV packaging technology will cause the high thermal conductivity material layer to be pumped out (Pump out) phenomenon, which in turn affects the overall performance of the chip.
是以，如何解決上述現有技術之問題與缺失，即為相關業者所亟欲研發之課題所在。 Therefore, how to solve the above-mentioned problems and deficiencies of the prior art is the subject that the relevant industry is eager to develop.
本創作之目的在於解決高導熱介面材料(Thermal Interface Material)因為無黏性或低黏度，容易發生溢流或泵出(pump out)的現象發生。 The purpose of this creation is to solve the problem that the thermal interface material is prone to overflow or pump out because of its non-viscosity or low viscosity.
本創作提出一種防漏散熱的改良結構，能夠防漏且散熱。 This creation proposes an improved structure for preventing leakage and heat dissipation, which can prevent leakage and dissipate heat.
本創作提供一種防漏散熱的改良結構，用於對一晶片本體上之一熱源進行散熱，防漏散熱的改良結構包括第一背膠層、第二背膠層、絕緣貼片、固定層與高導熱係數材料層。第一背膠層，其中間區域為一第一開口，第一背膠層貼合於晶片本體上且熱源穿透於第一開口。絕緣貼片，其中間區域為一第二孔洞開口，絕緣貼片貼合於第一背膠層之上且熱源穿透於第一孔洞開口。固定層，其中間區域為第二孔洞開口，固定層貼合於絕緣貼片之上且熱源位於第 二孔洞開口之內，其中該固定層之內部兩側各具有一第一凹槽空間。高導熱係數材料層，其設置於第二孔洞開口之內且高導熱係數材料層之下表面之中間區域貼合且覆蓋至熱源之上方，其中高導熱係數材料層之上表面與固定層之上表面平行。第二背膠層，其中間區域為一第二開口。散熱器之部分貼合於該第二背膠層且其底部之部分下表面接觸於該高導熱係數材料層之上表面，其中散熱器之底部具有複數個儲存凹槽，且儲存凹槽的深度為0.001~0.15毫米。 The present invention provides an improved structure for preventing leakage and heat dissipation, which is used to dissipate heat from a heat source on a chip body. The improved structure for preventing leakage and heat dissipation includes a first adhesive layer, a second adhesive layer, an insulating patch, a fixing layer and a High thermal conductivity material layer. The first adhesive layer has a first opening in the middle area, the first adhesive layer is attached to the chip body, and the heat source penetrates through the first opening. The insulating patch has a second hole opening in the middle area, the insulating patch is attached on the first adhesive layer, and the heat source penetrates the first hole opening. The fixed layer, the middle area of which is the opening of the second hole, the fixed layer is attached to the insulating patch, and the heat source is located in the first Inside the openings of the two holes, each of the inner sides of the fixed layer has a first groove space. The high thermal conductivity material layer is disposed within the opening of the second hole, and the middle area of the lower surface of the high thermal conductivity material layer is attached to and covers the top of the heat source, wherein the upper surface of the high thermal conductivity material layer is above the fixed layer The surfaces are parallel. The second adhesive layer, the middle area of which is a second opening. A part of the heat sink is attached to the second adhesive layer and a part of the lower surface of the bottom of the heat sink is in contact with the upper surface of the high thermal conductivity material layer, wherein the bottom of the heat sink has a plurality of storage grooves, and the depth of the storage groove is 0.001~0.15 mm.
在本創作之一實施例中，第二背膠層貼合於該固定層之上且該高導熱係數材料層之上表面貼合於該第二開口之上表面。 In an embodiment of the present invention, the second adhesive layer is attached on the fixing layer, and the upper surface of the high thermal conductivity material layer is attached on the upper surface of the second opening.
在本創作之一實施例中，該些儲存凹槽之每一個之外形為方形。 In an embodiment of the present invention, each of the storage grooves has a square shape.
在本創作之一實施例中，該些儲存凹槽之每一個之外形為圓形。 In an embodiment of the present invention, each of the storage grooves has a circular shape.
在本創作之一實施例中，該些儲存凹槽之每一個之外形為六邊形。 In an embodiment of the present invention, the outer shape of each of the storage grooves is a hexagon.
在本創作之一實施例中，固定層為一耐高溫泡棉或一絕緣膠片。 In an embodiment of the present invention, the fixing layer is a high temperature resistant foam or an insulating film.
在本創作之一實施例中，防漏散熱的改良結構更包括第三背膠層，其外形與開口同第二背膠層，其中第三背膠層設置於絕緣貼片與固定層之間。 In one embodiment of the present invention, the improved structure for preventing leakage and heat dissipation further includes a third adhesive layer whose shape and opening are the same as those of the second adhesive layer, wherein the third adhesive layer is disposed between the insulating patch and the fixing layer .
在本創作之一實施例中，第一凹槽空間之外邊界形狀為矩形、三角形或弧形。 In an embodiment of the present invention, the shape of the outer boundary of the first groove space is a rectangle, a triangle or an arc.
在本創作之一實施例中，固定層之內部之另外兩側各具有一第二凹槽空間，該第二凹槽空間之外邊界形狀為矩形。 In an embodiment of the present invention, the other two sides of the interior of the fixed layer each have a second groove space, and the outer boundary shape of the second groove space is a rectangle.
在本創作之一實施例中，透過階梯式棋盤布局形成縱橫交錯之該些儲存凹槽。 In an embodiment of the present invention, the storage grooves that are crisscrossed are formed through a stepped checkerboard layout.
綜上所述，本創作實施例所揭露之防漏散熱的改良結構能夠具有以下功效： 1.降低因為零件電路導電而造成高導熱係數材料層組裝時的漏電風險；2.解決3D TSV封裝技術的內部封裝會使高導熱材料產生泵出(Pump out)的問題；3.解決高功率晶片在運作時降頻的問題；4.解決超頻時溫度過高的問題；以及5.解決重複性測試時散熱不穩定的問題。 To sum up, the improved structure for preventing leakage and heat dissipation disclosed in this creative embodiment can have the following effects: 1. Reduce the risk of leakage during assembly of the high thermal conductivity material layer due to the electrical conduction of the parts circuit; 2. Solve the problem that the internal packaging of the 3D TSV packaging technology will cause the pump out of the high thermal conductivity material; 3. Solve the problem of high power 4. Solve the problem of high temperature during overclocking; and 5. Solve the problem of unstable heat dissipation during repetitive testing.
底下藉由具體實施例詳加說明，當更容易瞭解本創作之目的、技術內容、特點及其所達成之功效。 The following describes in detail with specific embodiments, when it is easier to understand the purpose, technical content, characteristics and effects of this creation.
100:防漏散熱的改良結構 100: Improved structure for leak-proof heat dissipation
110:晶片本體 110: wafer body
120:熱源 120: heat source
130:第一背膠層 130: The first adhesive layer
140:絕緣貼片 140: Insulation patch
150:固定層 150:Fixed Layer
155:第一凹槽空間 155: First groove space
156:第二凹槽空間 156: Second groove space
160:高導熱係數材料層 160: High thermal conductivity material layer
170:第二背膠層 170: The second adhesive layer
180:第三背膠層 180: The third adhesive layer
190、191、192、193:散熱器 190, 191, 192, 193: Radiators
190A、191A、192A、193A:儲存凹槽 190A, 191A, 192A, 193A: Storage grooves
L1、L2、L3:長度 L1, L2, L3: length
H1:第一開口 H1: first opening
H2:第二開口 H2: Second opening
W1:第一孔洞開口 W1: The first hole opening
W2:第二孔洞開口 W2: The second hole opening
第一圖係為本創作的防漏散熱的改良結構之立體示意圖。 The first figure is a three-dimensional schematic diagram of the improved structure for preventing leakage and heat dissipation of the present creation.
第二A圖係為本創作的防漏散熱的改良結構之立體分解示意圖。 The second picture A is a three-dimensional exploded schematic view of the improved structure for preventing leakage and heat dissipation of the present creation.
第二B圖係為本創作的防漏散熱的改良結構之另一實施例立體分解示意圖。 The second figure B is a perspective exploded schematic view of another embodiment of the improved structure for preventing leakage and heat dissipation of the present invention.
第三A圖係為本創作的防漏散熱的改良結構之剖面圖。 The third picture A is a cross-sectional view of the improved structure for preventing leakage and heat dissipation of the present creation.
第三B圖係為本創作的防漏散熱的改良結構之另一實施例剖面圖。 The third figure B is a cross-sectional view of another embodiment of the improved structure for preventing leakage and heat dissipation of the present invention.
第四A圖係為本創作的具有六邊形儲存凹槽之散熱器之示意圖。 The fourth picture A is a schematic diagram of the radiator with hexagonal storage grooves created by the present invention.
第四B圖係為本創作的具有圓形儲存凹槽之散熱器之示意圖。 The fourth picture B is a schematic diagram of the radiator with circular storage grooves created by the present invention.
第四C圖係為本創作的具有階梯狀儲存凹槽之散熱器之示意圖。 The fourth picture C is a schematic diagram of the radiator with stepped storage grooves of the present invention.
第五圖係為本創作的防漏散熱的改良結構之上視圖。 The fifth picture is a top view of the improved structure for preventing leakage and heat dissipation of the present creation.
第六圖係為本創作的防漏散熱的改良結構之固定層上視圖。 The sixth picture is the top view of the fixed layer of the improved structure for preventing leakage and heat dissipation of the present creation.
第七圖係為本創作的防漏散熱的改良結構之固定層另一實施例上視圖。 The seventh figure is a top view of another embodiment of the fixed layer of the improved structure for preventing leakage and heat dissipation of the present invention.
第八圖係為本創作的防漏散熱的改良結構之固定層再一實施例上視圖。 Figure 8 is a top view of another embodiment of the fixed layer of the improved structure for preventing leakage and heat dissipation of the present invention.
為能解決現有散熱結構漏電且散熱不足的問題，與3D TSV封裝技術的內部封裝的問題會使高導熱材料產生泵出(Pump out)現象，創作人經過多年的研究及開發，據以改善現有產品的詬病，後續將詳細介紹本創作如何以一種防漏散熱的改良結構來達到最有效率的功能訴求。 In order to solve the problem of leakage and insufficient heat dissipation of the existing heat dissipation structure, and the problem of the internal packaging of the 3D TSV packaging technology, the high thermal conductivity material will be pumped out. After years of research and development, the creator has improved the existing For the criticism of the product, the follow-up will introduce in detail how this creation achieves the most efficient functional demands with an improved structure that prevents leakage and heat dissipation.
隨著微處理器功能的提升，處理速度越來越快，加上為使主機體積有效地縮減而將元件體積隨著縮小，所發出的熱能就越多。因此，各種散熱結構不斷地演進，以期望發揮更佳的散熱效果。 With the improvement of microprocessor functions, the processing speed is getting faster and faster, and in order to effectively reduce the volume of the host, the volume of the components is reduced, and the more heat energy is emitted. Therefore, various heat dissipation structures are constantly evolving in order to achieve better heat dissipation effects.
請同時參閱第一圖、第二A圖與第三A圖，第一圖係為本創作的防漏散熱的改良結構之立體示意圖。第二A圖係為本創作的防漏散熱的改良結構之立體分解示意圖。第三A圖係為本創作的防漏散熱的改良結構之剖面圖。如第一圖、第二A圖與第三A圖所示，本創作提供一種防漏散熱的改良結構100，用於對一晶片本體110上之一熱源120進行散熱。在本創作實施例中，熱源為一晶片或Lid或IHS。然而，在晶片本體110表面通常可能會一些因為內部電子零件而引起的漏電情況，本創作實施例提出一個解決方案能夠有效解決漏電問題。以下將進一步說明，防漏散熱的改良結構100包括第一背膠層130、絕緣貼片140、固定層150、高導熱係數材料層160、第二背膠層170與散熱器190。第一背膠層130，其中間區域為一第一開口H1，第一背膠層130貼合於晶片本體110上且熱源120穿透於第一開口H1。
Please refer to the first picture, the second picture A and the third picture A at the same time, the first picture is a three-dimensional schematic diagram of the improved structure for preventing leakage and heat dissipation of the present invention. The second picture A is a three-dimensional exploded schematic view of the improved structure for preventing leakage and heat dissipation of the present creation. The third picture A is a cross-sectional view of the improved structure for preventing leakage and heat dissipation of the present creation. As shown in the first figure, the second figure A and the third figure A, the present invention provides an
關於本創作之散熱器，其底部具有特別的結構，以下將進一步說明。散熱器190之部分貼合於第二背膠層170且其底部之部分下表面接觸於高導熱
係數材料層160之上表面，其中該散熱器190(191或192)之底部具有複數個儲存凹槽且散熱器190(191或192)之該些儲存凹槽190A可以是方形、圓形、六邊形凹槽或其它多邊形外觀，但並不以此為限，只要是複數個儲存凹槽都是本創作之精神所在。例如，在本創作之第2A圖、第2B圖、第3A圖與第3B圖之實施例中，散熱器190之該些儲存凹槽190A之每一個之外形為方形之例示性實施例，以此作為說明且在本創作實施例中的儲存凹槽190A的深度為0.001~0.15毫米。其餘像是圓形、六邊形或階梯狀的儲存凹槽(191A、192A或193A)為同理可證，其中第四A圖係為本創作的具有六邊形儲存凹槽之散熱器之示意圖，第四B圖係為本創作的具有圓形儲存凹槽之散熱器之示意圖。第四C圖係為本創作的具有階梯狀儲存凹槽之散熱器之示意圖。其中值得一提的是第四C圖的階梯狀儲存凹槽193A之散熱器193，其透過階梯式棋盤布局形成縱橫交錯之該些儲存凹槽193A，最頂部的方形尺寸為長度L3，兩個方形頂部之間的距離為長度L2，儲存凹槽193A的橫向尺寸為長度L1。本創作實施例之散熱器190可以為鰭片式散熱器，但並不以此為限。在實作情況下，散熱器190也會使用其它固定件來與防漏散熱的改良結構100進行結合固定。
Regarding the radiator of this creation, the bottom has a special structure, which will be further described below. A part of the
請同時參照第五圖至第七圖，第五圖係為本創作的防漏散熱的改良結構之上視圖。第六圖係為本創作的防漏散熱的改良結構之固定層上視圖。第七圖係為本創作的防漏散熱的改良結構之固定層另一實施例上視圖。此外，絕緣貼片140之中間區域為一第一孔洞開口W1，絕緣貼片140貼合於第一背膠層130之上且熱源120穿透於第一孔洞開口W1，絕緣貼片140能夠降低因為零件電路導電而造成高導熱係數材料層組裝時的漏電風險。固定層150之中間區域為第二孔洞開口W2，固定層150貼合於絕緣貼片140之上且熱源120位於第二孔洞開口W2之內部，其中固定層150之內部兩側各具有一第一凹槽空間155，其中第一凹
槽空間155之外邊界形狀為矩形、三角形或弧形。固定層150之內部之另外兩側各具有一第二凹槽空間156，該第二凹槽空間156之外邊界形狀為矩形。
Please refer to Figures 5 to 7 at the same time. Figure 5 is a top view of the improved structure for preventing leakage and heat dissipation of the present invention. The sixth picture is the top view of the fixed layer of the improved structure for preventing leakage and heat dissipation of the present creation. The seventh figure is a top view of another embodiment of the fixed layer of the improved structure for preventing leakage and heat dissipation of the present invention. In addition, the middle area of the insulating
此外，第二背膠層170之中間區域為一第二開口H2(其開口形狀相同於或幾乎相同於固定層150之第二孔洞開口W2)，第二背膠層170貼合於固定層150之上且高導熱係數材料層160之上表面貼合於第二開口H2之上表面。
In addition, the middle area of the second
在本創作實施例中，固定層150可以是耐高溫泡棉或絕緣膠片。再者，高導熱係數材料層160設置於第二孔洞開口W2之內部且高導熱係數材料層160之下表面之中間區域貼合且覆蓋至熱源120之上方，其中高導熱係數材料層160之上表面與固定層150之上表面平行或是幾乎平行。在熱源120的溫度達到某一臨界溫度時(例如，攝氏60度)，固定層150會如同一個擋牆的角色功能，可以防止液態金屬側漏。本創作實施例中之高導熱係數材料層160透過這樣的結構安置於散熱防漏結構100中能夠解決解決超頻時溫度過高的問題。此外，從第四圖可知，固定層150之第二孔洞開口W2略大於高導熱係數材料層160之面積。
In this creative embodiment, the
可以看得出來，固定層150會如同一個擋牆的角色功能，可以防止液態金屬側漏。進一步來說說，當高導熱係數材料層160超過攝氏60度開始融化時，因為有固定層150之擋牆的功能，高導熱係數材料層160所融化後之液態金屬會往固定層150之第一凹槽空間155聚集或是流向至儲存凹槽190A裡面，進一步來說，第一凹槽空間155之體積要預留為高導熱係數材料層160壓合體積之0.1倍，且複數個儲存凹槽190A能夠有足夠的空間來容納這些融化掉的高導熱係數材料層160。因高導熱係數材料層160會因使用時的溫度而會產生相變化，如固態變成液態(濃稠液態-膠狀)，但其在相變化時其體積會有增加1.01~1.05倍之變化。所以利用水庫的特性在晶片上的固定層150使用儲量圍堵方法，讓其多餘的量儲存於所欲之處(第一凹槽空間155與複數個儲存凹槽190A)，可期在晶片在溫度變化時有預量使用。為提高較好的散熱效率，需使用較高導熱係數的高導熱係數材
料層160，本創作實施例防止高導熱係數材料層160相變時外溢量所導致主機板短路問題，也能解決熱源發熱位置不均勻所造成的散熱不穩定現象，讓高導熱係數材料層160的高導熱性能能夠發揮出來。此外，第二凹槽空間156也會發揮像第一凹槽空間或複數個儲存凹槽190A類似一樣的功用。由以上說明可知，本創作之目的在於解決高導熱介面材料(Thermal Interface Material)因為無黏性或低黏度，容易發生溢流或泵出(pump out)的現象發生。
It can be seen that the fixed
請同時參照第二B圖與第三B圖，第二B圖係為本創作的防漏散熱的改良結構之另一實施例立體分解示意圖。第三B圖係為本創作的防漏散熱的改良結構之另一實施例剖面圖。如圖所示，防漏散熱的改良結構100更包括一第三背膠層180，其外形與開口同該第二背膠層170，其中該第三背膠層180設置於該絕緣貼片140與該固定層150之間。第二B圖與第三B圖之其餘結構與上述說明相同，在此不再贅述。
Please refer to the second B and the third B at the same time. The second B is a perspective exploded schematic view of another embodiment of the improved structure for preventing leakage and heat dissipation of the present invention. The third figure B is a cross-sectional view of another embodiment of the improved structure for preventing leakage and heat dissipation of the present invention. As shown in the figure, the
值得一提的是，由於3D TSV封裝工藝在設計、量產、測試及供應鏈等方面還不成熟，且工藝成本較高，且3D TSV封裝技術的內部封裝的問題會使高導熱材料產生泵出(Pump out)現象，進而影響晶片的整體效能。在透過將散熱器190(191、192或193)之底部製作成複數個儲存凹槽190A(191A、192A或193A)，可有效解決3D TSV封裝技術的內部封裝的問題。
It is worth mentioning that because the 3D TSV packaging process is immature in terms of design, mass production, testing and supply chain, and the process cost is high, and the internal packaging problems of the 3D TSV packaging technology will cause high thermal conductivity materials to produce pumps. Pump out phenomenon, and then affect the overall performance of the chip. By forming a plurality of
綜上所述，本創作實施例所揭露之防漏散熱的改良結構能夠具有以下功效：1.降低因為零件電路導電而造成高導熱係數材料層組裝時的漏電風險；2.解決3D TSV封裝技術的內部封裝會使高導熱材料產生泵出(Pump out)的問題；3.解決高功率晶片在運作時降頻的問題； 4.解決超頻時溫度過高的問題；以及5.解決重複性測試時散熱不穩定的問題。 To sum up, the improved structure for preventing leakage and heat dissipation disclosed in this creative embodiment can have the following effects: 1. Reduce the leakage risk during assembly of the high thermal conductivity material layer due to the electrical conduction of the component circuit; 2. Solve the 3D TSV packaging technology 3. Solve the problem of frequency reduction of high-power chips during operation; 4. Solve the problem of high temperature during overclocking; and 5. Solve the problem of unstable heat dissipation during repetitive testing.
唯以上所述者，僅為本創作之較佳實施例而已，並非用來限定本創作實施之範圍。故即凡依本創作申請範圍所述之特徵及精神所為之均等變化或修飾，均應包括於本創作之申請專利範圍內。 Only the above descriptions are only preferred embodiments of the present creation, and are not intended to limit the scope of the present creation. Therefore, all equivalent changes or modifications made in accordance with the features and spirit described in the scope of the application for this creation shall be included in the scope of the patent application for this creation.
100:防漏散熱的改良結構 100: Improved structure for leak-proof heat dissipation
110:晶片本體 110: wafer body
120:熱源 120: heat source
130:第一背膠層 130: The first adhesive layer
140:絕緣貼片 140: Insulation patch
150:固定層 150:Fixed Layer
155:第一凹槽空間 155: First groove space
156:第二凹槽空間 156: Second groove space
160:高導熱係數材料層 160: High thermal conductivity material layer
170:第二背膠層 170: The second adhesive layer
190:散熱器 190: Radiator
190A:儲存凹槽 190A: Storage groove
H1:第一開口 H1: first opening
H2:第二開口 H2: Second opening
W1:第一孔洞開口 W1: The first hole opening
W2:第二孔洞開口 W2: The second hole opening
Claims (10)
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| Application Number | Priority Date | Filing Date | Title |
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| TW111202880U TWM629562U (en) | 2022-03-23 | 2022-03-23 | Improved leakage-proof and heat dissipation structure |
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