TWM628506U - Ultrasonic transducer - Google Patents
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Description
本新型大體上為一種超聲波傳感器,更具體言之,其係關於一種聲阻匹配層具第一共振匹配部與第二共振匹配部來匹配不同共振模式的超聲波傳感器。 The present invention is generally an ultrasonic sensor, and more specifically, it relates to an ultrasonic sensor in which an acoustic impedance matching layer has a first resonance matching part and a second resonance matching part to match different resonance modes.
現有的超聲波傳感器(ultrasonic transducer)可用於短距離的物體檢測,其通過發出的超聲波碰撞到物體之後反射回來的時間差,可以計算出超聲波傳感器與待檢測物體之間的距離。對於超聲波檢測而言,待檢測物體的類型與性質並不會受到太多的限制,包括各種表面顏色、透明度、硬度的固體、液體或粉體等,其都可以用超聲波傳感器來進行檢測。因此,現今超聲波傳感器已廣泛應用在停車雷達(parking sensor)、位高檢測(level sensor)、薄片層數檢測(multiple sheet detection)及流量檢測(flow meter)等領域。 The existing ultrasonic transducer (ultrasonic transducer) can be used for short-distance object detection, which can calculate the distance between the ultrasonic sensor and the object to be detected by the time difference between the emitted ultrasonic wave and the reflection after hitting the object. For ultrasonic testing, the types and properties of objects to be detected are not limited too much, including solids, liquids or powders with various surface colors, transparency, hardness, etc., which can be detected by ultrasonic sensors. Therefore, ultrasonic sensors have been widely used in the fields of parking sensor, level sensor, multiple sheet detection and flow meter.
超聲波傳感器的主要組成元件為壓電陶瓷片(piezoceramics),例如以鋯鈦酸鉛(lead zirconate titanate,PZT)材料製作的陶瓷片,其雙面會塗佈導電層。在工作時施加高頻交流電訊號會讓壓電陶瓷產生高頻率振動,所述高頻率振動是一種聲波,如果此聲波的頻率落在超聲波範圍,即為超聲波振動。然而,為了讓所產生的超聲波能從壓電陶瓷傳遞到空氣中,壓 電陶瓷的聲阻(acoustic impedance)必須與空氣的聲阻匹配才行。 The main components of the ultrasonic sensor are piezoelectric ceramics (piezoceramics), such as ceramics made of lead zirconate titanate (PZT) material, and conductive layers are coated on both sides of the ceramics. Applying a high-frequency alternating current signal during operation will cause the piezoelectric ceramic to generate high-frequency vibration. The high-frequency vibration is a kind of sound wave. If the frequency of the sound wave falls within the ultrasonic range, it is ultrasonic vibration. However, in order to transmit the generated ultrasonic energy from the piezoelectric ceramic to the air, the pressure The acoustic impedance of electric ceramics must match the acoustic impedance of air.
聲阻(Z)=材料密度(ρ)*超聲波聲速(C),壓電陶瓷的聲阻約為30-35 MRayl(106公斤/平方公尺‧秒),空氣的聲阻約為430 Rayl(公斤/平方公尺‧秒),壓電陶瓷的聲阻與空氣的聲阻,有非常大的差距,導致壓電陶瓷所產生的超聲波能量無法傳遞到空氣中。因此,聲阻匹配層(acoustic matching layer)就成了超聲波傳感器中必要的部件,其會設置在壓電陶瓷與空氣之間,使得兩者的聲阻得以匹配,從而可有效地將超聲波傳遞到空氣中。用於超聲波空氣傳感器(ultrasonic air transducer)的聲阻匹配層的聲阻,其最理想值為:√(35M*430)Rayl,約為0.12 MRayl,但是自然界中很難找到聲阻低於1 MRayl而且又耐用的材料,一般業界常用的聲阻匹配層材料為高分子樹脂與空心玻璃球混合成的複合材料,來達到較低的聲阻特性,同時也具有較佳的耐候性及可靠度。 Acoustic resistance (Z) = material density (ρ) * ultrasonic sound speed (C), the acoustic resistance of piezoelectric ceramics is about 30-35 MRayl (10 6 kg/m²·sec), and the acoustic resistance of air is about 430 Rayl (kg/m²·sec), the acoustic resistance of piezoelectric ceramics is very different from that of air, so that the ultrasonic energy generated by piezoelectric ceramics cannot be transmitted to the air. Therefore, the acoustic matching layer (acoustic matching layer) has become a necessary component in the ultrasonic sensor, which is arranged between the piezoelectric ceramic and the air, so that the acoustic resistance of the two can be matched, so that the ultrasonic wave can be effectively transmitted to the air. in the air. The most ideal value of the acoustic resistance of the acoustic resistance matching layer used for the ultrasonic air transducer is: √(35M*430) Rayl, which is about 0.12 MRayl, but it is difficult to find an acoustic resistance lower than 1 MRayl in nature Moreover, it is a durable material. Generally, the commonly used acoustic impedance matching layer material in the industry is a composite material mixed with polymer resin and hollow glass spheres to achieve lower acoustic impedance characteristics, as well as better weather resistance and reliability.
另一方面,一般壓電陶瓷在不同的設置條件下可能會具有不同的共振模式,例如徑向共振模式或是厚度共振模式。壓電陶瓷在不同共振模式下所發出的聲波會具有不同的頻率,一般的聲阻匹配層並不能同時匹配壓電陶瓷在不同共振模式下發出的聲波。故此,本領域的技術人士仍須研究開發可適用於壓電陶瓷多種震動模式的聲阻匹配層。 On the other hand, general piezoelectric ceramics may have different resonance modes under different setting conditions, such as radial resonance mode or thickness resonance mode. The sound waves emitted by piezoelectric ceramics in different resonance modes will have different frequencies, and the general acoustic impedance matching layer cannot match the sound waves emitted by piezoelectric ceramics in different resonance modes at the same time. Therefore, those skilled in the art still need to research and develop an acoustic impedance matching layer applicable to various vibration modes of piezoelectric ceramics.
以上背景技術內容的公開僅用於輔助理解本案的新型構思及技術方案,其並不必然屬於本專利申請的現有技術,在沒有明確的證據表明上述內容在本專利申請的申請日前已經公開的情況下,上述背景技術不應當用於評價本申請的新穎性和創造性。 The disclosure of the above background technology content is only used to assist the understanding of the novel concept and technical solution of the present case, and it does not necessarily belong to the prior art of the present patent application. In the following, the above background art should not be used to evaluate the novelty and inventive step of the present application.
有鑑於前述現有技術的現況,本新型於此提出了一種新穎的超 聲波傳感器,特點在於其聲阻匹配層具有厚度不同的第一共振匹配部與第二共振匹配部來匹配壓電體不同的共振頻率。 In view of the current state of the prior art, the present invention proposes a novel super The acoustic wave sensor is characterized in that its acoustic resistance matching layer has a first resonance matching part and a second resonance matching part with different thicknesses to match the different resonance frequencies of the piezoelectric body.
本新型的目的之一在於提出一種超聲波傳感器,包含一壓電體,具有徑向共振頻率及厚度共振頻率,且具有一上表面、隔著該壓電體的一下表面以及連接該上表面與該下表面的側表面,以及一聲阻匹配層,設置在該壓電體的該上表面上,且具有第一共振匹配部與第二共振匹配部,其中該第一共振匹配部在垂直該上表面的方向上的厚度大於該第二共振匹配部在該方向上的厚度,且該第一共振匹配部的該厚度匹配該壓電體的該徑向共振頻率,該第二共振匹配部的該厚度匹配該壓電體的該另一徑向共振頻率或該厚度共振頻率。 One of the objectives of the present invention is to provide an ultrasonic sensor, which includes a piezoelectric body, which has a radial resonance frequency and a thickness resonance frequency, and has an upper surface, a lower surface separated by the piezoelectric body, and a connection between the upper surface and the piezoelectric body. The side surface of the lower surface and the acoustic impedance matching layer are arranged on the upper surface of the piezoelectric body, and have a first resonance matching part and a second resonance matching part, wherein the first resonance matching part is perpendicular to the upper surface The thickness in the direction of the surface is greater than the thickness of the second resonance matching part in the direction, and the thickness of the first resonance matching part matches the radial resonance frequency of the piezoelectric body, the second resonance matching part The thickness The thickness matches the other radial resonance frequency or the thickness resonance frequency of the piezoelectric body.
本新型的另一目的在於提出一種超聲波傳感器,包含一壓電體,具有一上表面、一隔著該壓電體的下表面、以及連接該上表面與該下表面的側表面,一承載體,具有一內表面以及隔著該承載體的外表面,且該壓電體的該上表面與該承載體的內表面接合並具有一彎曲共振頻率及一厚度共振頻率,以及一聲阻匹配層,與該承載體的該外表面接合,且具有第一共振匹配部以及第二共振匹配部,其中該第一共振匹配部在垂直該外表面的方向上的厚度大於該第二共振匹配部在該方向上的厚度,且該第一共振匹配部的該厚度匹配該壓電體與該承載體形成的該彎曲共振頻率,該第二共振匹配部的該厚度匹配該壓電體與該承載體形成的另一彎曲共振頻率或該厚度共振頻率。 Another object of the present invention is to provide an ultrasonic sensor, comprising a piezoelectric body, having an upper surface, a lower surface separated by the piezoelectric body, and a side surface connecting the upper surface and the lower surface, and a carrier body , has an inner surface and an outer surface separated by the carrier, and the upper surface of the piezoelectric body is joined to the inner surface of the carrier and has a bending resonance frequency and a thickness resonance frequency, and an acoustic impedance matching layer , which is engaged with the outer surface of the carrier, and has a first resonance matching portion and a second resonance matching portion, wherein the thickness of the first resonance matching portion in the direction perpendicular to the outer surface is greater than that of the second resonance matching portion at The thickness in the direction, and the thickness of the first resonance matching portion matches the bending resonance frequency formed by the piezoelectric body and the carrier, and the thickness of the second resonance matching portion matches the piezoelectric body and the carrier Another bending resonance frequency formed or the thickness resonance frequency.
本新型的這類目的與其他目的,在閱者讀過後文中以多種圖形與繪圖來描述的具體實施例細節說明後,必然可變得更為明瞭顯見。 These and other objects of the present invention will inevitably become more apparent after the reader has read the detailed description of the specific embodiments described hereinafter with various figures and drawings.
100:超聲波傳感器 100: Ultrasonic sensor
102:壓電體 102: Piezoelectric
102a:上表面 102a: Upper surface
102b:下表面 102b: Lower surface
102c:側表面 102c: Side Surface
104:聲阻匹配層 104: Acoustic impedance matching layer
104a:徑向共振匹配部 104a: Radial resonance matching part
104b:厚度共振匹配部 104b: Thickness resonance matching part
105:聲阻匹配層 105: Acoustic impedance matching layer
105a:第一共振匹配部 105a: the first resonance matching part
105b:第二共振匹配部 105b: second resonance matching part
106:導線 106: Wire
108:管狀承載體 108: Tubular carrier
108a:上開口 108a: upper opening
108b:下開口 108b: Lower opening
108c:內表面 108c: inner surface
109:桶狀承載體 109: Barrel carrier
109a:頂部 109a: Top
109b:下開口 109b: Lower opening
109c:內表面 109c: inner surface
109d:開孔 109d: Opening
110:減震體 110: Shock Absorber
112:承載盤 112: Carrier plate
114:引腳 114: pin
116:承載體 116: Carrier
116a:外表面 116a: External surface
116b:內表面 116b: inner surface
118:桶狀承載體 118: Barrel carrier
118a:外表面 118a: outer surface
118b:下開口 118b: lower opening
118c:內表面 118c: inner surface
D1:第一方向 D1: first direction
D2:第二方向 D2: Second direction
第1圖是根據本新型較佳實施例中一超聲波傳感器的一實施態樣的截面圖;第2圖是根據本新型實施例中一壓電體在不同振動模式下的阻抗(Ω)對頻率(kHz)的線圖;第3圖是根據本新型實施例中一超聲波傳感器的另一實施態樣的截面圖;第4圖是根據本新型實施例中一超聲波傳感器的又一實施態樣的截面圖;第5圖是根據本新型實施例中一超聲波傳感器的又一實施態樣的截面圖;第6圖是根據本新型實施例中一超聲波傳感器的又一實施態樣的截面圖;第7圖是根據本新型實施例中一超聲波傳感器的又一實施態樣的截面圖;第8圖是根據本新型實施例中一超聲波傳感器的又一實施態樣的截面圖;第9圖是根據本新型實施例中一超聲波傳感器的又一實施態樣的截面圖;第10圖是根據本新型實施例中一超聲波傳感器的又一實施態樣的截面圖;以及第11圖是根據本新型實施例中一超聲波傳感器的又一實施態樣的截面圖。 Figure 1 is a cross-sectional view of an embodiment of an ultrasonic sensor according to a preferred embodiment of the present invention; Figure 2 is impedance (Ω) versus frequency of a piezoelectric body in different vibration modes according to an embodiment of the present invention (kHz) line diagram; FIG. 3 is a cross-sectional view of another embodiment of an ultrasonic sensor according to an embodiment of the present invention; FIG. 4 is a cross-sectional view of another embodiment of an ultrasonic sensor according to an embodiment of the present invention Sectional view; Figure 5 is a cross-sectional view of another embodiment of an ultrasonic sensor according to an embodiment of the present invention; Figure 6 is a cross-sectional view of another embodiment of an ultrasonic sensor according to an embodiment of the present invention; Fig. 7 is a cross-sectional view of another embodiment of an ultrasonic sensor according to an embodiment of the present invention; Fig. 8 is a cross-sectional view of another embodiment of an ultrasonic sensor according to an embodiment of the present invention; FIG. 10 is a cross-sectional view of yet another embodiment of an ultrasonic sensor according to an embodiment of the present invention; and FIG. 11 is a cross-sectional view of another embodiment of an ultrasonic sensor according to an embodiment of the present invention. A cross-sectional view of yet another embodiment of an ultrasonic sensor in the example.
在下文的本新型細節描述中,元件符號會標示在隨附的圖示中成為其中的一部份,並且以可實行該實施例之特例描述方式來表示。這類的實施例會說明足夠的細節俾使該領域之一般技藝人士得以具以實施。為了圖例清楚之故,圖示中可能有部分元件的尺寸會加以誇大。閱者須瞭解到本新型中亦可利用其他的實施例或是在不悖離所述實施例的前提下,作出結構性、邏輯性、及電性上的改變。因此,下文之細節描述不可被視為是一種限定,反之,其中所包含的實施例將由隨附的申請專利範圍來加以界定。 In the following detailed description of the invention, reference numerals will be identified as part of the accompanying drawings, and will be presented in a description of a specific example in which the embodiment can be practiced. Such embodiments will be described in sufficient detail to enable those of ordinary skill in the art to practice them. The dimensions of some of the elements in the illustrations may be exaggerated for clarity of illustration. Readers should understand that other embodiments can also be used in the present invention or structural, logical, and electrical changes can be made without departing from the described embodiments. Therefore, the following detailed description is not to be regarded as a limitation, but rather the embodiments contained therein are to be defined by the scope of the appended claims.
首先請參照第1圖,其繪示出根據本新型實施例中一超聲波傳感器100的一實施態樣的截面示意圖。在此實施例中,超聲波傳感器100包含一壓電體102,其具有隔著該壓電體102相對的上表面102a與下表面102b以及連接上表面102a與下表面102b的側表面102c。壓電體102可包含實心方形、多邊形或圓形的壓電材料,或是環狀壓電材料,或是多層陶瓷製程的壓電材料,或是具有溝槽的壓電材料。該些壓電材料可包含鋯鈦酸鉛(Pb(ZrTi)O3)、鈦酸鉛(PbTiO3)等含鉛的壓電材料,或鈦酸鋇(BaTiO3)、鈮酸鉀鈉((NaK)NbO3)等不含鉛的壓電材料,其聲阻約為30-35 MRayl,遠大於空氣的聲阻430 Rayl,故需要設置聲阻匹配層來使兩者的聲阻匹配。壓電體102的導電層上可連接導線106,將外部的高頻交流電訊號電連接至壓電體102,使其產生高頻率振動,藉以發出超聲波。在本新型實施例中,一聲阻匹配層104設置在壓電體102的上表面102a上並與之直接接觸。一般而言,聲阻匹配層104在垂直壓電體102上表面102a的方向(第一方向D1,即厚度方向或軸向)上的厚度約等於壓電體102在工作頻率下所發出的超聲波在該聲阻匹配層104中時的波長的1/4,如此能達到最佳的超聲波傳遞效
果。
First, please refer to FIG. 1 , which illustrates a schematic cross-sectional view of an implementation of an
儘管如此,一般壓電陶瓷在不同的設置條件下可能會具有不同的共振模式,例如徑向共振模式(radial mode resonance)或是厚度共振模式(thickness mode resonance),壓電陶瓷在這些不同的共振模式下所發出的聲波會具有不同的共振頻率。請參照第2圖,其為根據本新型實施例中一壓電體102在不同振動模式下的阻抗(Ω)對頻率(kHz)的線圖。從圖中可以看到,當壓電體102通電產生高頻率振動時,其在不同的振動頻率下會具有不同的阻抗,當阻抗相對較低時即代表壓電體102在該頻率的振動下能產生較大的能量效益,也就是穩定的共振態。以圖中的曲線為例,壓電體102在50kHz的較低頻率共振時可達到一相對較低的阻抗,此時其處於徑向共振模式,其共振力有相當的部分是朝向壓電體102的徑向,即第二方向D2。另一方面,壓電體102在200kHz的較高頻率共振時也可達到一相對較低的阻抗,此時其處於厚度共振模式(或稱之為軸向共振模式),其共振力大部分是朝向壓電體102的厚度方向,即第一方向D1。一般而言,使用較低頻共振的超聲波傳感器可以增加偵測距離,但是盲區相對較大,解析度也相對較差。反之,使用較高頻共振的超聲波傳感器,其偵測距離較短,但是盲區相對較小,解析度也相對較好。
However, in general, piezoelectric ceramics may have different resonance modes under different setting conditions, such as radial mode resonance or thickness mode resonance. The sound waves emitted in the mode will have different resonant frequencies. Please refer to FIG. 2 , which is a graph of impedance (Ω) versus frequency (kHz) of a
由於壓電體102具有不同共振模式的性質,且這些共振模式可以透過改變所施加電源頻率的高低來達成,故我們可以視應用的場合來決定所要採用的壓電體共振模式。然而,儘管壓電體102能以不同的共振模式運作,但不同的共振模式會具有不同的共振頻率,故會需要不同厚度的聲阻匹配層來與之匹配。回到第1圖。如第1圖所示,本新型的特點在於聲阻匹配層104具有不同的厚度。更具體言之,本新型的聲阻匹配層104具有厚度不同的第一共振匹配部104a及第二共振匹配部104b,分別匹配壓電體的
一徑向共振頻率及另一徑向共振頻率或是厚度共振頻率。從截面外型來看,第二共振匹配部104b像是位於壓電體102中心處的凹槽,第一共振匹配部104a則圍繞著第二共振匹配部104b。由於壓電體102的徑向共振頻率較低(50kHz),在此模式下發出的超聲波波長會較長,故會需要厚度較厚的聲阻匹配層,而壓電體102的厚度共振頻率較高(200kHz),在此模式下發出的超聲波波長會較短,故會需要厚度較薄的聲阻匹配層。本實施例中,第一共振匹配部104a的厚度係匹配壓電體102的徑向共振頻率,第二共振匹配部104b的厚度係匹配壓電體102的另一徑向頻率或是厚度共振頻率。
Since the
聲阻匹配層104包含由有機高分子材料以及實心粉體或是空心粉體構成的複合材料,該有機高分子材料包括環氧樹脂(Epoxy)、乙烯基酯樹脂(vinyl ester resin)、丙烯酸樹脂(acrylic resin)、聚氨酯(polyurethane)、或是紫外線硬化膠(UV膠)等。空心或實心粉體可為空心玻璃球顆粒或是實心玻璃球顆粒,其係作為填充物均勻散佈在該有機高分子材料中,以調整聲阻匹配層104的整體密度。空心玻璃球顆粒的密度介於0.1g/cm3~0.6g/cm3(公克/立方公分)之間。由於聲阻與材料的密度成正比,聲阻匹配層104的密度越低,所能得出的聲阻也越低,故越能達成聲阻匹配的功效。在有機高分子材料中加入不同體積比的玻璃球顆粒,經過混合、脫泡及固化等處理,即可調製成不同密度且不同厚度的聲阻匹配層104。
The acoustic
現在請參照第3圖,其繪示出根據本新型實施例中超聲波傳感器的另一實施態樣的截面示意圖。在此實施例中,超聲波傳感器100可以設置在一管狀承載體108中。管狀承載體108具有一上開口108a與下開口108b,其中管狀承載體108的內表面108c圍繞著聲阻匹配層104並與之接合。在其他實施例中,管狀承載體108的內表面108c也可與壓電體102接合。聲阻匹配層104的第一共振匹配部104a與第二共振匹配部104b從管狀承載
體108的上開口108a露出,導線106則可經由管狀承載體108的下開口108b接出。管狀承載體108的截面形狀可為方形、多邊形或是圓形。管狀承載體108的材料包含選自下列群組或其組合的金屬材質:鋁、鈦、銅、不鏽鋼,或是下列群組或其組合的非金屬材質:玻璃、壓克力、鐵氟龍(PTFE)、聚二氟乙烯(PVDF)、聚丙烯(PP)、聚乙烯(PE)、聚氯乙烯(PVC)、聚對苯二甲酸丁酯(PBT)、丙烯腈-丁二烯-苯乙烯共聚物(ABS)、聚苯硫醚(PPS)、液晶聚合物(LCP)、或是聚醚醚酮(PEEK)等。
Please refer now to FIG. 3 , which shows a schematic cross-sectional view of another implementation of an ultrasonic sensor according to an embodiment of the present invention. In this embodiment, the
現在請參照第4圖,其繪示出根據本新型實施例中超聲波傳感器的又一實施態樣的截面示意圖。在此實施例中,超聲波傳感器100還可包含一減震體110,其與壓電體102的下表面102b以及管狀承載體108的內表面108c接合。如此,在壓電體102運作時的高頻振動下,減震體110能有效地減震,降低超聲波傳感器的餘震(ringing)。在其他實施例中,也可能設置兩種具有不同減震係數或硬度的減震體,來達到更佳的減震效果。減震體110的材料可包含纖維狀彈性體,具體可包括矽膠(Silicone)、橡膠(Rubber)、乙烯-醋酸乙烯酯共聚物(EVA)、苯乙烯彈性體(Styrene Elastomer)、聚酯彈性體(Polyester Elastomer)、烯烴彈性體(Olefin Elastomer)、熱塑性硫化橡膠(TPV)、熱塑性聚氨酯(TPU)、環氧樹脂(Epoxy)、軟木(wood cork)、聚酯棉、羊毛氈、玻璃纖維或是泡棉。
Please refer now to FIG. 4 , which illustrates a schematic cross-sectional view of yet another implementation of an ultrasonic sensor according to an embodiment of the present invention. In this embodiment, the
現在請參照第5圖,其繪示出根據本新型實施例中超聲波傳感器的又一實施態樣的截面示意圖。在此實施例中,超聲波傳感器100還可包含一承載盤112,其上表面與減震體110相接,周圍則與管狀承載體108的內表面108c接合而固定在管狀承載體108上,可提供超聲波傳感器100部件更穩固的支撐效果。承載盤112並具有引線或引腳114,壓電體102可透過導線106連接至承載盤112的引腳114並從管狀承載體108的下開口108b接
出。
Please refer now to FIG. 5 , which shows a schematic cross-sectional view of yet another implementation of the ultrasonic sensor according to the new embodiment of the present invention. In this embodiment, the
現在請參照第6圖,其繪示出根據本新型實施例中超聲波傳感器的又一實施態樣的截面示意圖。在此實施例中,有別於前述實施例,超聲波傳感器100係設置在一桶狀承載體109中。桶狀承載體109具有一頂部109a、一下開口109b以及連接該頂部109a與該下開口109b的桶身,該頂部109a中心還形成有一開孔109d。壓電體102及聲阻匹配層104設置於桶狀承載體109內,其中聲阻匹配層104的第一共振匹配部104a與桶狀承載體109頂部109a的內表面接合,第二共振匹配部104b則從開孔109d露出。導線106則可經由桶狀承載體109的下開口109b接出。桶狀承載體109的截面形狀可為方形、多邊形或是圓形。桶狀承載體109的材料可包含選自下列群組或其組合的金屬材質:鋁、鈦、銅、不鏽鋼,或是下列群組或其組合的非金屬材質:玻璃、壓克力、鐵氟龍(PTFE)、聚二氟乙烯(PVDF)、聚丙烯(PP)、聚乙烯(PE)、聚氯乙烯(PVC)、聚對苯二甲酸丁酯(PBT)、丙烯腈-丁二烯-苯乙烯共聚物(ABS)、聚苯硫醚(PPS)、液晶聚合物(LCP)、或是聚醚醚酮(PEEK)等。
Please refer now to FIG. 6 , which illustrates a schematic cross-sectional view of yet another implementation of an ultrasonic sensor according to an embodiment of the present invention. In this embodiment, different from the previous embodiments, the
現在請參照第7圖,其繪示出根據本新型實施例中超聲波傳感器的又一實施態樣的截面示意圖。在此實施例中,桶狀承載體109的頂部109a並未形成有開孔,聲阻匹配層104的第二共振匹配部104b也與桶狀承載體109頂部109a的內表面接合。這樣的設計使得超聲波傳感器更適合用在外界環境較為嚴苛的場合,其可有效保護聲阻匹配層不受損傷。
Please refer now to FIG. 7 , which illustrates a schematic cross-sectional view of yet another implementation of the ultrasonic sensor according to the new embodiment of the present invention. In this embodiment, the top 109 a of the barrel-shaped
現在請參照第8圖,其繪示出根據本新型實施例中超聲波傳感器的又一實施態樣的截面示意圖。在此實施例中,超聲波傳感器100還可包含一減震體110,其與壓電體102的下表面102b以及桶狀承載體109的內表面109c接合,並填滿壓電體102以及聲阻匹配層104與桶狀承載體109之間的
空隙。如此,在壓電體102運作時的高頻振動下,減震體110能有效地減震,降低超聲波傳感器的餘震(ringing)。在其他實施例中,也可能設置兩種具有不同減震係數或硬度的減震體,來達到更佳的減震效果。減震體110的材料可包含纖維狀彈性體,具體可包括矽膠(Silicone)、橡膠(Rubber)、乙烯-醋酸乙烯酯共聚物(EVA)、苯乙烯彈性體(Styrene Elastomer)、聚酯彈性體(Polyester Elastomer)、烯烴彈性體(Olefin Elastomer)、熱塑性硫化橡膠(TPV)、熱塑性聚氨酯(TPU)、環氧樹脂(Epoxy)、軟木(wood cork)、聚酯棉、羊毛氈、玻璃纖維或是泡棉。
Please refer now to FIG. 8 , which illustrates a schematic cross-sectional view of yet another implementation of the ultrasonic sensor according to the novel embodiment. In this embodiment, the
現在請參照第9圖,其繪示出根據本新型實施例中超聲波傳感器的又一實施態樣的截面示意圖。在此實施例中,超聲波傳感器100還可包含一承載盤112,其上表面與減震體110相接,周圍則與桶狀承載體109的內表面109c接合而固定在桶狀承載體109上,可提供超聲波傳感器100部件更穩固的支撐效果。承載盤112並具有引線或引腳114,壓電體102可透過導線106連接至承載盤112的引腳114並從桶狀承載體109的下開口109b接出。
Please refer now to FIG. 9 , which illustrates a schematic cross-sectional view of yet another implementation of the ultrasonic sensor according to the novel embodiment. In this embodiment, the
現在請參照第10圖,其繪示出根據本新型實施例中超聲波傳感器的又一實施態樣的截面示意圖。在此實施例中,於前述實施例不同的是,壓電體並未與聲阻匹配層直接接合。如第9圖所示,超聲波傳感器100包含一承載體116。承載體116具有一內表面116b以及隔著承載體116的外表面116a,且壓電體102係設置在承載體116的內表面116b上,聲阻匹配層105則設置在承載體116的外表面116a上,其中承載體116的面積會大於其與壓電體102以及聲阻匹配層105的接合面面積,有部分從周圍延伸而出。在這樣的設置下,由於壓電體102並未與聲阻匹配層105直接接合且兩者間隔著一平板狀的承載體116,壓電體102原有較低頻共振態的徑向共振模式會轉
變為彎曲共振模式(bending mode resonance),此時其共振力有相當的部分會傳導到所接合的承載體116並使其產生彎曲震動。如此,壓電體102變成具有一較低頻的彎曲共振頻率及一較高頻的厚度共振頻率,而聲阻匹配層105具有一較厚的第一共振匹配部105a以及一較薄的第二共振匹配部105b以分別匹配其一彎曲共振頻率及另一彎曲共振頻率或是厚度共振頻率。承載體116的材料包含選自下列群組或其組合的金屬材質:鋁、鈦、銅、不鏽鋼,或是下列群組或其組合的非金屬材質:玻璃、壓克力、鐵氟龍(PTFE)、聚二氟乙烯(PVDF)、聚丙烯(PP)、聚乙烯(PE)、聚氯乙烯(PVC)、聚對苯二甲酸丁酯(PBT)、丙烯腈-丁二烯-苯乙烯共聚物(ABS)、聚苯硫醚(PPS)、液晶聚合物(LCP)、或是聚醚醚酮(PEEK)等。
Please refer now to FIG. 10 , which illustrates a schematic cross-sectional view of yet another implementation of the ultrasonic sensor according to the novel embodiment of the present invention. In this embodiment, different from the previous embodiments, the piezoelectric body is not directly bonded to the acoustic impedance matching layer. As shown in FIG. 9 , the
現在請參照第11圖,其繪示出根據本新型實施例中超聲波傳感器的又一實施態樣的截面示意圖。在此實施例中,於前述實施例不同的是,承載體為一桶狀承載體118而非平板狀承載體116。桶狀承載體118具有一外表面118a以及與之相對的內表面118c。壓電體102係設置在桶狀承載體118的內部且與其內表面118c相接,聲阻匹配層105則設置在桶狀承載體118的外部且與其外表面118a相接。這樣的設置適用於須使用桶狀承載體來提供保護以及使用聲阻匹配層來提供聲阻匹配的場合。
Please refer now to FIG. 11 , which shows a schematic cross-sectional view of yet another implementation of the ultrasonic sensor according to the new embodiment of the present invention. In this embodiment, the difference from the previous embodiments is that the carrier is a barrel-shaped
根據本新型前述各實施例的超聲波傳感器態樣,不同厚度的聲阻匹配層可匹配壓電體在不同設置下的共振模式,並可兼容應用在使用桶狀承載體以及平板狀承載體的場合。 According to the ultrasonic sensor aspects of the aforementioned embodiments of the present invention, the acoustic impedance matching layers of different thicknesses can match the resonance modes of the piezoelectric body under different settings, and can be compatible with the application of the barrel-shaped carrier and the flat-plate carrier. .
以上所述僅為本新型之較佳實施例,凡依本新型申請專利範圍所做之均等變化與修飾,皆應屬本新型之涵蓋範圍。 The above are only preferred embodiments of the present invention, and all equivalent changes and modifications made according to the scope of the patent application of the present invention shall fall within the scope of the present invention.
100:超聲波傳感器 100: Ultrasonic sensor
102:壓電體 102: Piezoelectric
102a:上表面 102a: Upper surface
102b:下表面 102b: Lower surface
102c:側表面 102c: Side Surface
104:聲阻匹配層 104: Acoustic impedance matching layer
104a:第一共振匹配部 104a: the first resonance matching part
104b:第二共振匹配部 104b: second resonance matching part
106:導線 106: Wire
D1:第一方向 D1: first direction
D2:第二方向 D2: Second direction
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