TWM628230U

TWM628230U - Gas distribution structure

Info

Publication number: TWM628230U
Application number: TW111201401U
Authority: TW
Inventors: 張志光
Original assignee: 緊固電子束科技有限公司
Priority date: 2022-02-10
Filing date: 2022-02-10
Publication date: 2022-06-11

Abstract

A gas distribution structure is proposed, and the gas distribution structure includes a support ring with a first bonding surface and a distribution plate with a second bonding surface. The first bonding surface and the second bonding surface are facing each other with an E-beam welding layer to be formed therebetween, so that the distribution plate and the support ring are hermetically bonded to each other. In this way, the gas distribution structure can be easily manufactured and maintained, thereby reducing the cost burden on the user.

Description

氣體擴散結構gas diffusion structure

本新型係關於一種氣體擴散結構，特別關於用於半導體等製程的氣體擴散結構。The present invention relates to a gas diffusion structure, in particular to a gas diffusion structure used in semiconductor and other processes.

對於半導體製造(包含第三代半導體)或LCD、OLED、LED等光電元件製造等而言，蝕刻或化學氣相沈積(Chemical Vapor Deposition, CVD)皆是常用之製程，而製程氣體係被提供至反應腔中，該反應腔中通常設置有氣體擴散板(或稱吹氣盤(shower head))，以使該氣體在反應腔中均勻地擴散至晶圓(或基板)上。For semiconductor manufacturing (including third-generation semiconductors) or optoelectronic components such as LCD, OLED, LED, etc., etching or chemical vapor deposition (Chemical Vapor Deposition, CVD) are commonly used processes, and the process gas system is provided to In the reaction chamber, a gas diffusion plate (or called a shower head) is usually arranged in the reaction chamber, so that the gas is uniformly diffused onto the wafer (or substrate) in the reaction chamber.

該氣體在反應腔中除了對晶圓作用(如蝕刻或成長薄膜)外，亦會對於氣體擴散板作用，也就是，氣體或其產生之電漿可能會侵蝕或腐蝕氣體擴散板，影響氣體擴散板之性能。例如，氣體擴散板之孔洞會因此變大或變形，影響氣體之均勻擴散能力。此外，在製程結束後，氣體擴散板可能會進行清潔或清洗，以去除表面之殘留物(residue)，而在此清潔或清洗過程中，清潔或清洗之媒介(氣體、液體或漿體)可能會使氣體擴散板之孔洞變大或變形等。The gas in the reaction chamber not only acts on the wafer (such as etching or growing thin films), but also acts on the gas diffusion plate, that is, the gas or the plasma generated by the gas may erode or corrode the gas diffusion plate, affecting the gas diffusion. performance of the board. For example, the holes of the gas diffusion plate will become larger or deformed, which will affect the uniform diffusion ability of the gas. In addition, after the process is completed, the gas diffusion plate may be cleaned or cleaned to remove residues on the surface, and during this cleaning or cleaning process, the cleaning or cleaning medium (gas, liquid or slurry) may be It will enlarge or deform the holes of the gas diffusion plate.

因此，氣體擴散板有一定的使用壽命，需要定期更換新品，以確保其效能。若不慎延誤氣體擴散板之更換時間，損耗之氣體擴散板可能會影響到製程良率或產能。Therefore, the gas diffusion plate has a certain service life and needs to be replaced with new products regularly to ensure its performance. If the replacement time of the gas diffusion plate is inadvertently delayed, the lost gas diffusion plate may affect the process yield or production capacity.

另一方面，氣體擴散板之售價不低，且氣體擴散板之尺寸越大時，售價亦越高，故定期更換新的氣體擴散板對於半導體製造廠亦是一筆不小的負擔。On the other hand, the price of the gas diffusion plate is not low, and the larger the size of the gas diffusion plate, the higher the price. Therefore, the regular replacement of the new gas diffusion plate is also a big burden for semiconductor manufacturers.

因此，如何降低氣體擴散板之使用成本，是相關技術領域的從業人員的目標。 Therefore, how to reduce the use cost of the gas diffusion plate is the goal of practitioners in the related technical field.

本新型之目的在於提供氣體擴散結構，以使得氣體擴散結構能較容易地被製作及維修，降低使用者成本上的負擔，且對於製程之量率或產能亦有幫助。The purpose of the present invention is to provide a gas diffusion structure, so that the gas diffusion structure can be easily fabricated and maintained, thereby reducing the burden on the user's cost, and also contributing to the throughput or productivity of the manufacturing process.

為達上述目的，在本新型的第一方面中，一種氣體擴散結構被提出，其包含：包含第一接合面之支撐環及包含第二接合面之擴散板，該第一接合面及該第二接合面係相面對，其中，該擴散板之該第二接合面及該支撐環之該第一接合面之間係形成電子束焊接層，以使該擴散板與該支撐環相密封地接合。In order to achieve the above object, in a first aspect of the present invention, a gas diffusion structure is proposed, which includes: a support ring including a first joint surface and a diffuser plate including a second joint surface, the first joint surface and the first joint surface. Two joint surfaces face each other, wherein an electron beam welding layer is formed between the second joint surface of the diffuser plate and the first joint surface of the support ring, so as to seal the diffuser plate and the support ring engage.

在本新型的第二方面中，該氣體擴散結構的該電子束焊接層可水平地形成、垂直地形成及/或傾斜地形成。In the second aspect of the present invention, the electron beam welding layer of the gas diffusion structure may be formed horizontally, vertically and/or obliquely.

在本新型的第三方面中，該氣體擴散結構的該支撐環或該擴散板之材料係包含鋁、鈦、銅或不銹鋼等各種金屬材料，亦可能包含非金屬材料。In the third aspect of the present invention, the material of the support ring or the diffuser plate of the gas diffusion structure includes various metal materials such as aluminum, titanium, copper or stainless steel, and may also include non-metallic materials.

在本新型的第四方面中，該氣體擴散結構的該支撐環之該第一接合面可為該支撐環之下環面，而該擴散板之該第二接合面可為該擴散板之上表面。In the fourth aspect of the present invention, the first joint surface of the support ring of the gas diffusion structure may be the lower annular surface of the support ring, and the second joint surface of the diffuser plate may be above the diffuser plate surface.

在此所揭示的的目的、特徵及優點將根據以下實施例的說明並參照圖式而對於本技術領域中具有通常知識者變得更為清楚。 The objects, features, and advantages disclosed herein will become more apparent to those of ordinary skill in the art from the following description of the embodiments with reference to the accompanying drawings.

以下說明結合圖式，對本新型的實施方式作詳細敘示。除非上下文中清楚地另外指明，所述實施例之技術特徵不應理解為對本新型的限制，且在不衝突的情況下，下述的實施例及實施例中的特徵可以相互組合。此外，除非清楚指明，否則本文所用之單數形式「一」亦包括複數形式(且具體數量不限制)，而所述之方位(如前、後、上、下、一側、兩側等)係為相對方位，可依據本新型的使用狀態而定義，並非明示或暗示本新型需有特定方向之構造或操作，亦不能理解為對本新型的限制。Embodiments of the present invention will be described in detail in the following description in conjunction with the drawings. Unless the context clearly indicates otherwise, the technical features of the embodiments should not be construed as limitations to the present invention, and the following embodiments and features in the embodiments may be combined with each other without conflict. In addition, unless clearly stated otherwise, the singular form "a" used herein also includes the plural form (and the specific number is not limited), and the orientation (eg, front, rear, upper, lower, one side, both sides, etc.) is The relative orientation can be defined according to the state of use of the present invention. It is not expressly or implied that the present invention needs to have a structure or operation in a specific direction, nor can it be construed as a limitation on the present invention.

請參閱圖1A及圖1B所示，根據本新型之較佳實施例，一氣體擴散結構1(或稱吹氣盤)被提出，其可用於半導體製造的蝕刻或化學氣相沈積等製程中。氣體擴散結構1主要可包含一支撐環10(或稱支撐框架)及一擴散板20(或稱氣體擴散板)，支撐環10可用以使氣體擴散結構1整體被固定或支撐在該些製程的反應腔(圖未式)中、且位於晶圓或基板(圖未式)之上方，而擴散板20可用以使來自其上方的製程氣體通過其中而向下均勻地擴散至於晶圓或基板上。Please refer to FIG. 1A and FIG. 1B , according to a preferred embodiment of the present invention, a gas diffusion structure 1 (or called a blowing plate) is proposed, which can be used in processes such as etching or chemical vapor deposition in semiconductor manufacturing. The gas diffusion structure 1 mainly includes a support ring 10 (or a support frame) and a diffusion plate 20 (or a gas diffusion plate). In the reaction chamber (not shown) and above the wafer or substrate (not shown), the diffuser plate 20 can be used to allow the process gas from above to pass through it and diffuse downward evenly onto the wafer or substrate .

該支撐環10及擴散板20兩者或其中一者之材料可包含鋁、鈦、銅或不銹鋼等金屬材料，其適合製程環境(較不易被製程環境影響或影響到製程環境)，且適合被融熔焊接。支撐環10或擴散板20亦可能包含非金屬材料。此外，該支撐環10及擴散板20非習知的一體成型者，而是各別地被製作形成出，再藉由後述的電子束焊接(E-beam welding)而彼此接合。The materials of both or one of the support ring 10 and the diffuser plate 20 may include metal materials such as aluminum, titanium, copper or stainless steel, which are suitable for the process environment (less easily affected by the process environment or the process environment), and suitable for being affected by the process environment. Fusion welding. The support ring 10 or the diffuser plate 20 may also comprise non-metallic materials. In addition, the support ring 10 and the diffuser plate 20 are not integrally formed, but are formed separately, and are joined to each other by electron beam welding (E-beam welding) to be described later.

更具體而言，支撐環10可包含上環面11、下環面12、內環面13及外環面14，上環面11與下環面12為相對地設置，而內環面13及外環面14為相對地設置、且內環面13及外環面14之每一者之上邊緣及下邊緣分別連接上環面11與下環面12。上環面11與下環面12可為實質地相平行，即在公差或加工精度內為相平行。內環面13及外環面14之任一者可相對於上環面11或下環面12為傾斜(亦可為垂直，圖未式)。More specifically, the support ring 10 may include an upper annular surface 11 , a lower annular surface 12 , an inner annular surface 13 and an outer annular surface 14 , the upper annular surface 11 and the lower annular surface 12 are disposed opposite to each other, and the inner annular surface 13 and the outer annular surface 14 The surfaces 14 are oppositely disposed, and the upper and lower edges of each of the inner annular surface 13 and the outer annular surface 14 are connected to the upper annular surface 11 and the lower annular surface 12, respectively. The upper annular surface 11 and the lower annular surface 12 may be substantially parallel, that is, within tolerance or machining accuracy. Either of the inner annular surface 13 and the outer annular surface 14 may be inclined relative to the upper annular surface 11 or the lower annular surface 12 (or may be vertical, not shown).

擴散板20可包含上表面21、下表面22、側面23(環面)及複數個孔洞24，上表面21與下表面22為相對地設置，而側面23之上邊緣及下邊緣分別連接上表面21與下表面22，該些孔洞24則形成於上表面21並延伸至下表面22，即該些孔洞24為貫穿孔。孔洞24可為單一直徑的圓孔(如垂直延伸的直孔)或者變化直徑或變化延伸方向的異形孔等。The diffuser plate 20 may include an upper surface 21, a lower surface 22, a side surface 23 (ring surface) and a plurality of holes 24. The upper surface 21 and the lower surface 22 are arranged opposite to each other, and the upper edge and the lower edge of the side surface 23 are respectively connected to the upper surface. 21 and the lower surface 22, the holes 24 are formed on the upper surface 21 and extend to the lower surface 22, that is, the holes 24 are through holes. The holes 24 can be circular holes with a single diameter (eg, straight holes extending vertically) or special-shaped holes with varying diameters or varying extending directions.

對應於晶圓或基板之形狀，支撐環10之上環面11及下環面12可為圓環面，而擴散板20之上表面21及下表面22可為圓形面。下環面12與上表面21相面對，且預計彼此相接合。因此，下環面12可稱為支撐環10之第一接合面101，而上表面21可稱擴散板20之第二接合面201；此術語「第一」及「第二」僅是被用來區別一個面與另一個面，並非限制。Corresponding to the shape of the wafer or the substrate, the upper annular surface 11 and the lower annular surface 12 of the support ring 10 can be annular surfaces, and the upper surface 21 and the lower surface 22 of the diffuser plate 20 can be annular surfaces. The lower annulus 12 faces the upper surface 21 and is expected to engage with each other. Therefore, the lower annular surface 12 can be referred to as the first joint surface 101 of the support ring 10, and the upper surface 21 can be referred to as the second joint surface 201 of the diffuser plate 20; the terms "first" and "second" are only used to distinguish one face from another, not a limitation.

支撐環10及擴散板20係各別地製造，例如支撐環10由一金屬塊製作出，而擴散板20由另一金屬塊製作出(此兩金屬塊可能都是鋁、銅或不銹鋼等材料)。由於不是由同一個、單一個金屬塊製作出支撐環10及擴散板20，氣體擴散結構1之製造工序較少，製造成本也相應較少，且製造品質也較好(例如孔洞24之均勻性佳)等。The support ring 10 and the diffuser plate 20 are manufactured separately, for example, the support ring 10 is made of a metal block, and the diffuser plate 20 is made of another metal block (the two metal blocks may be made of aluminum, copper or stainless steel, etc.). ). Since the support ring 10 and the diffuser plate 20 are not made from the same, single metal block, the gas diffusion structure 1 has fewer manufacturing processes, lower manufacturing costs, and better manufacturing quality (for example, the uniformity of the holes 24 ). good) and so on.

請參閱圖2A、圖2B及圖3所示，擴散板20之上表面21(第二接合面201)與支撐環10之下環面12(第一接合面101)相抵靠(藉由夾治具來使兩者維持抵靠)，然後兩者放置於電子束焊接機之真空腔(圖未式)內。真空腔內會產生之電子束EB，使電子束EB對準上表面21與下環面12之間的介面，以高溫融化上表面21與下環面12，進而在上表面21與下環面12之間形成銲珠(bead)。如此，擴散板20之第二接合面201與支撐環10之第一接合面101之間會形成一形成電子束焊接層30(或簡稱焊接層)，以使擴散板20與支撐環10相密封地接合。Please refer to FIG. 2A , FIG. 2B and FIG. 3 , the upper surface 21 (the second joint surface 201 ) of the diffuser plate 20 abuts against the lower annular surface 12 (the first joint surface 101 ) of the support ring 10 (by clamping tool to keep the two against each other), and then the two are placed in the vacuum chamber (not shown) of the electron beam welding machine. The electron beam EB will be generated in the vacuum chamber, so that the electron beam EB is aimed at the interface between the upper surface 21 and the lower annulus 12, melts the upper surface 21 and the lower annulus 12 at a high temperature, and then melts the upper surface 21 and the lower annulus 12 on the upper surface 21 and the lower annulus 12. Beads are formed between 12 . In this way, an electron beam welding layer 30 (or welding layer for short) is formed between the second joint surface 201 of the diffuser plate 20 and the first joint surface 101 of the support ring 10 to seal the diffuser plate 20 and the support ring 10 ground engagement.

藉此，第一接合面101及第二接合面201實質地如同一體成型，使得氣體難以從第一接合面101及第二接合面201之間通過而洩漏。In this way, the first joint surface 101 and the second joint surface 201 are substantially integrally formed, so that it is difficult for gas to pass through between the first joint surface 101 and the second joint surface 201 and leak.

藉由電子束焊接除了可快速地形成電子束焊接層30，所形成之電子束焊接層30係細又深，表示電子束焊接層30對於支撐環10及擴散板20之熱影響小(如歪曲變形少)且接合強度高。In addition to forming the electron beam welding layer 30 quickly by the electron beam welding, the formed electron beam welding layer 30 is thin and deep, which means that the electron beam welding layer 30 has little thermal influence on the support ring 10 and the diffuser plate 20 (such as distortion. less deformation) and high bonding strength.

上述電子束焊接層30係水平地形成，因為擴散板20之第二接合面201與支撐環10之第一接合面101皆為水平面。請參閱圖4A及圖4B所示，擴散板20之第二接合面201與支撐環10之第一接合面101也可能為垂直面或是傾斜面，使得所形成的電子束焊接層30為垂直地形成/或傾斜地形成。雖然圖未式，電子束焊接層30也能一部分為水平地形成、垂直地形成或傾斜地形成、另一部份為水平地形成、垂直地形成或傾斜地形成。The above-mentioned electron beam welding layer 30 is formed horizontally, because the second joint surface 201 of the diffuser plate 20 and the first joint surface 101 of the support ring 10 are both horizontal planes. Please refer to FIGS. 4A and 4B , the second joint surface 201 of the diffuser plate 20 and the first joint surface 101 of the support ring 10 may also be vertical surfaces or inclined surfaces, so that the formed electron beam welding layer 30 is vertical Formed and/or formed obliquely. Although not shown, a part of the electron beam welding layer 30 may be formed horizontally, vertically or obliquely, and the other part may be formed horizontally, vertically or obliquely.

接著將說明依據本新型其他較佳實施例的氣體擴散結構，其可經由下述的氣體擴散結構之維修方法而獲得，該維修方法可產生出相同或類似於上述實施例的氣體擴散結構1，故維修方法的技術內容與氣體擴散結構的技術內容可相互參考、應用，相同的部份將省略或簡化。Next, the gas diffusion structure according to other preferred embodiments of the present invention will be described, which can be obtained by the following maintenance method of the gas diffusion structure, which can produce the same or similar gas diffusion structure 1 of the above-mentioned embodiment, Therefore, the technical content of the maintenance method and the technical content of the gas diffusion structure can be referred to and applied to each other, and the same parts will be omitted or simplified.

請參閱圖5所示的氣體擴散結構之維修方法之流程圖，於步驟S21中，先提供一氣體擴散結構，以上述之氣體擴散結構1為例，但氣體擴散結構也可以是傳統一體成型者。該氣體擴散結構1包含相接合之支撐環10及已使用過之擴散板20，也就是，氣體擴散結構1已使用數次，可能接近使用壽命，故擴散板20之某些尺寸(如孔洞24之直徑)已變化或變大而可能影響到氣體擴散效果。支撐環10及已使用過之擴散板20之間的接合係之前可藉由電子束焊接層30達成(或是為傳統一體成型接合)。Please refer to the flowchart of the maintenance method of the gas diffusion structure shown in FIG. 5. In step S21, a gas diffusion structure is provided first, taking the gas diffusion structure 1 as an example, but the gas diffusion structure can also be a traditional one-piece molding. . The gas diffusion structure 1 includes the supporting ring 10 and the diffuser plate 20 that have been used. That is, the gas diffusion structure 1 has been used for several times and may be close to its service life. Therefore, certain dimensions of the diffuser plate 20 (such as the holes 24 diameter) has changed or become larger and may affect the gas diffusion effect. The bonding between the support ring 10 and the used diffuser plate 20 can be previously achieved by electron beam welding of the layer 30 (or a conventional one-piece bonding).

接著進行步驟S23，將已使用過之擴散板20從支撐環10切割分離，例如可藉由銑床、車床或線切割等來達成，可使切割移除量較少、或使切割面較為平坦。切割分離時，可沿著原本的擴散板20之第二接合面201與支撐環10之第一接合面101之間的介面來為之，或是在稍微偏離第一接合面101或第二接合面201處為之。Next, step S23 is performed to cut and separate the used diffuser plate 20 from the support ring 10 , for example, by a milling machine, a lathe or wire cutting, which can reduce the amount of cutting removal or make the cutting surface flatter. When cutting and separating, it can be done along the interface between the second joint surface 201 of the original diffuser plate 20 and the first joint surface 101 of the support ring 10 , or it can be slightly deviated from the first joint surface 101 or the second joint surface This is done at face 201.

在擴散板20從支撐環10切割分離之後，支撐環10之切割面即定義為第一接合面101。此第一接合面101可能不平坦(些微傾斜或粗糙)，因此可選擇地，藉由磨平、銑平或車床加工等方式來使第一接合面101(切割面)變平坦，以益於後續電子束焊接的進行。After the diffuser plate 20 is cut and separated from the support ring 10 , the cut surface of the support ring 10 is defined as the first joint surface 101 . The first joint surface 101 may not be flat (slightly inclined or rough), so optionally, the first joint surface 101 (cutting surface) may be flattened by grinding, milling or lathe processing, so as to benefit Subsequent electron beam welding is performed.

爾後進行步驟S25，提供替換用之擴散板20A。此替換用之擴散板20A係預先製作好且尺寸符合要求。通常而言，替換用之擴散板20A並未於半導體製程中使用過，或雖然使用過但經整修過(例如過大之孔洞24已填補重製)，故擴散板20A之尺寸亦符合要求。Then, step S25 is performed to provide a replacement diffuser plate 20A. The replacement diffuser plate 20A is prefabricated and sized appropriately. Generally speaking, the replacement diffuser plate 20A has not been used in the semiconductor process, or has been used but has been refurbished (for example, the oversized hole 24 has been filled and reworked), so the size of the diffuser plate 20A also meets the requirements.

然後進行步驟S27，併參圖3，將支撐環10與替換用之擴散板20A相抵靠，也就是，使支撐環10之第一接合面101(切割面)與替換用之擴散板20A之第二接合面201(如上表面21)相抵靠，可藉由夾治具來使兩者維持抵靠。Step S27 is then performed, and referring to FIG. 3 , the support ring 10 is abutted against the replacement diffuser plate 20A, that is, the first joint surface 101 (cut surface) of the support ring 10 and the first joint surface 101 (cut surface) of the replacement diffuser plate 20A are abutted The two joint surfaces 201 (such as the upper surface 21 ) are abutted against each other, and can be maintained against each other by a jig.

最後進行步驟S29，以電子束EB於支撐環10與該替換用之擴散板20A之間形成電子束焊接層30，以使支撐環10與替換用之擴散板20A相密封地接合。進行電子束焊接時，第一接合面101與第二接合面201之法線方向(此例中為水平線)可垂直於電子束EB之前進方向(此例中為垂直線)。在形成電子束焊接層30之後，若電子束焊接層30有外露部分，則可選擇地將該外露部分加工研磨或拋光，以使接合後的支撐環10與擴散板20A之表面更為平整。Finally, step S29 is performed to form an electron beam welding layer 30 between the support ring 10 and the replacement diffuser plate 20A with an electron beam EB, so that the support ring 10 and the replacement diffuser plate 20A are sealedly joined. During electron beam welding, the normal direction of the first joint surface 101 and the second joint surface 201 (a horizontal line in this example) may be perpendicular to the advancing direction of the electron beam EB (a vertical line in this example). After the electron beam welding layer 30 is formed, if the electron beam welding layer 30 has an exposed part, the exposed part can be optionally ground or polished to make the surfaces of the joined support ring 10 and the diffuser plate 20A more flat.

經上述維修方法所得之氣體擴散結構1可如新品般具有符合規格之尺寸，但所費成本可低於新品之價格。此外，維修後之氣體擴散結構1使用數次後，可再次進行執行上述維修方法，以替換已使用過之擴散板20A。因此，半導體製造廠可定期地維修氣體擴散結構1使其維持正常機能，相較於傳統之更換全新氣體擴散板之作法，將更為節省花費，此外，由於維修之成本相對地較便宜，半導體製造廠可考慮提高氣體擴散結構1之維修頻率，使氣體擴散結構1常保持較佳狀態。The gas diffusion structure 1 obtained by the above-mentioned maintenance method can have dimensions that meet the specifications like a new product, but the cost can be lower than the price of the new product. In addition, after the repaired gas diffusion structure 1 is used several times, the above-mentioned repair method can be performed again to replace the used diffuser plate 20A. Therefore, the semiconductor manufacturing plant can regularly repair the gas diffusion structure 1 to maintain its normal function. Compared with the traditional method of replacing a new gas diffusion plate, it will save costs. In addition, since the maintenance cost is relatively low, the semiconductor Manufacturers may consider increasing the maintenance frequency of the gas diffusion structure 1 so as to keep the gas diffusion structure 1 in a better state.

綜上所述，本新型所提供的氣體擴散結構可使得氣體擴散結構較容易地被製作及維修，降低使用者成本上的負擔，且對於製程之良率或產能亦有幫助。To sum up, the gas diffusion structure provided by the present invention can make the gas diffusion structure easier to manufacture and maintain, reduce the cost burden on the user, and also help the process yield or productivity.

雖然本新型僅就上述所選擇的實施例來描繪，在沒有背離如隨附申請專利範圍所界定的本新型的範疇的情況下，有可能對本案進行各種改變、修改或替換，只要不實質地影響預期的操作或功能。因此，前述實施例說明僅作為例示性用途而不在於對本新型進行限制，本申請案所請求的範疇因就申請專利範圍及其均等物來界定。Although the present invention is only described in terms of the above-selected embodiments, various changes, modifications or substitutions may be made to the present invention without departing from the scope of the present invention as defined by the scope of the appended claims, provided that they are not substantially Affect intended operation or functionality. Therefore, the foregoing descriptions of the embodiments are for illustrative purposes only and are not intended to limit the present invention, and the claimed scope of the present application is to be defined in terms of the claimed scope and its equivalents.

1:氣體擴散結構 10:支撐環 101:第一接合面 11:上環面 12:下環面 13:內環面 14:外環面 20,20A:擴散板 201:第二接合面 21:上表面 22:下表面 23:側面 24:孔洞 30:電子束焊接層 EB:電子束 1: Gas Diffusion Structure 10: Support ring 101: The first joint surface 11: Upper torus 12: Lower torus 13: inner ring surface 14: Outer ring surface 20,20A: Diffuser plate 201: Second joint surface 21: Upper surface 22: Lower surface 23: Side 24: Holes 30: Electron beam welding layer EB: electron beam

[圖1A]為根據本新型之較佳實施例之氣體擴散結構之立體圖。1A is a perspective view of a gas diffusion structure according to a preferred embodiment of the present invention.

[圖1B]為根據本新型之較佳實施例之氣體擴散結構之立體分解圖。1B is an exploded perspective view of a gas diffusion structure according to a preferred embodiment of the present invention.

[圖2A]為根據本新型之較佳實施例之氣體擴散結構之剖視圖。2A is a cross-sectional view of a gas diffusion structure according to a preferred embodiment of the present invention.

[圖2B]為根據本新型之較佳實施例之氣體擴散結構之剖面之部分放大圖，顯示出一種電子束焊接層。2B is a partial enlarged view of a cross-section of a gas diffusion structure according to a preferred embodiment of the present invention, showing an electron beam welding layer.

[圖3]為根據本新型之較佳實施例之氣體擴散結構之剖視圖，其中電子束係施加於氣體擴散結構上。3 is a cross-sectional view of a gas diffusion structure according to a preferred embodiment of the present invention, wherein electron beams are applied to the gas diffusion structure.

[圖4A]及[圖4B]為根據本新型之較佳實施例之氣體擴散結構之剖面之部分放大圖，顯示出其他種之電子束焊接層。[FIG. 4A] and [FIG. 4B] are partial enlarged views of the cross-section of the gas diffusion structure according to the preferred embodiment of the present invention, showing other types of electron beam welding layers.

[圖5]為氣體擴散結構之維修方法之流程圖。 [FIG. 5] is a flow chart of the maintenance method of the gas diffusion structure.

1:氣體擴散結構 1: Gas Diffusion Structure

10:支撐環 10: Support ring

11:上環面 11: Upper torus

12:下環面 12: Lower torus

13:內環面 13: inner ring surface

14:外環面 14: Outer ring surface

20:擴散板 20: Diffuser plate

21:上表面 21: Upper surface

22:下表面 22: Lower surface

23:側面 23: Side

24:孔洞 24: Holes

Claims

一種氣體擴散結構，包含：支撐環，包含第一接合面；以及擴散板，包含第二接合面，該第一接合面及該第二接合面係相面對，其中，該擴散板之該第二接合面及該支撐環之該第一接合面之間係形成電子束焊接層，以使該擴散板與該支撐環相密封地接合。 A gas diffusion structure comprising: a support ring including a first engagement surface; and a diffuser plate, comprising a second joint surface, the first joint surface and the second joint surface are facing each other, wherein the second joint surface of the diffuser plate and the first joint surface of the support ring are formed between Electron beam welding layers to seal the diffuser plate and the support ring.

如請求項1所述之氣體擴散結構，其中，該電子束焊接層係水平地形成、垂直地形成及/或傾斜地形成。The gas diffusion structure of claim 1, wherein the electron beam welding layer is formed horizontally, vertically and/or obliquely.

如請求項1所述之氣體擴散結構，其中，該支撐環或該擴散板之材料係包含鋁、鈦、銅或不銹鋼之金屬材料。The gas diffusion structure according to claim 1, wherein the material of the support ring or the diffusion plate is a metal material of aluminum, titanium, copper or stainless steel.

如請求項1所述之氣體擴散結構，其中，該支撐環之該第一接合面為該支撐環之下環面，而該擴散板之該第二接合面為該擴散板之上表面。The gas diffusion structure of claim 1, wherein the first joint surface of the support ring is the lower annular surface of the support ring, and the second joint surface of the diffuser plate is the upper surface of the diffuser plate.