TWM615662U - Photonic crystal surface emitting laser device - Google Patents
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- TWM615662U TWM615662U TW110205227U TW110205227U TWM615662U TW M615662 U TWM615662 U TW M615662U TW 110205227 U TW110205227 U TW 110205227U TW 110205227 U TW110205227 U TW 110205227U TW M615662 U TWM615662 U TW M615662U
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本新型創作是有關於一種雷射元件,且特別是有關於一種光子晶體面射型雷射元件。This new creation is related to a laser element, and particularly to a photonic crystal surface emitting laser element.
電致發光光子晶體面射型雷射可實現單模態輸出(single mode output)、窄光譜波長線寬(spectrum wavelength linewidth)及小的出光發散角,其主要結構包括一底披覆層(bottom cladding layer)、一發光層及一光子晶體層,其中發光層位於底披覆層與光子晶體層之間。在此架構及操作機制下,雷射光會從頂部與底部的至少其中一個方向出射至外界。The electroluminescent photonic crystal surface-emitting laser can achieve single mode output, narrow spectrum wavelength linewidth and small light divergence angle. Its main structure includes a bottom coating layer (bottom coating). cladding layer), a light-emitting layer and a photonic crystal layer, wherein the light-emitting layer is located between the bottom cladding layer and the photonic crystal layer. Under this structure and operation mechanism, the laser light will be emitted to the outside from at least one of the top and bottom directions.
若再搭配微機電系統(micro-electro mechanical system, MEMS)光學元件或機械擺動光學元件來使光子晶體面射型雷射產生動態的偏折,便可達到掃描的效果。然而,無論是微機電系統或機械擺動光學元件都是利用機構擺動的方式來達到掃描的效果,會有掃描速度受限於機械擺動速度以及元件的可靠度不足、耐用性不佳的問題。If combined with micro-electro mechanical system (MEMS) optical elements or mechanical swing optical elements to make the photonic crystal surface-emitting laser produce dynamic deflection, the scanning effect can be achieved. However, whether it is a micro-electromechanical system or a mechanically oscillating optical element, the scanning effect is achieved by means of mechanical oscillation, and there are problems that the scanning speed is limited by the mechanical oscillating speed, the reliability of the element is insufficient, and the durability is poor.
本新型創作提供一種光子晶體面射型雷射元件,可以利用簡單的架構決定雷射光束的出光偏折方向。This new creation provides a photonic crystal surface-emitting laser element, which can use a simple structure to determine the light deflection direction of the laser beam.
本新型創作的一實施例提出一種光子晶體面射型雷射元件,包括至少一光子晶體面射型雷射單元,光子晶體面射型雷射單元包括一發光層、一光子晶體層、一摻雜半導體層及一繞射光柵。發光層用以發出一光束,光子晶體層配置於發光層的一側。摻雜半導體層配置於發光層的另一側,且繞射光柵配置於光子晶體層上或摻雜半導體層上。An embodiment of the present invention proposes a photonic crystal surface-emitting laser element, which includes at least one photonic crystal surface-emitting laser unit. The photonic crystal surface-emitting laser unit includes a light-emitting layer, a photonic crystal layer, and a dopant. The hetero semiconductor layer and a diffraction grating. The light-emitting layer is used for emitting a light beam, and the photonic crystal layer is disposed on one side of the light-emitting layer. The doped semiconductor layer is arranged on the other side of the light-emitting layer, and the diffraction grating is arranged on the photonic crystal layer or the doped semiconductor layer.
在本新型創作的實施例的光子晶體面射型雷射元件中,由於採用配置於光子晶體層上或摻雜半導體層上的繞射光柵來繞射經光子晶體層所繞射出的雷射光束,因此可以利用簡單的架構來決定雷射光束的出光偏折方向。In the photonic crystal surface-emitting laser element of the embodiment of the present invention, a diffraction grating disposed on the photonic crystal layer or on the doped semiconductor layer is used to diffract the laser beam diffracted by the photonic crystal layer Therefore, a simple structure can be used to determine the direction of deflection of the laser beam.
圖1A為本新型創作的一實施例的光子晶體面射型雷射元件的立體示意圖,圖1B為圖1A的光子晶體面射型雷射元件的上視示意圖,而圖1C為圖1B的光子晶體面射型雷射元件沿著I-I線的剖面示意圖,其中在圖1A中,光子晶體面射型雷射元件的頂部被局部切開,以便於示出部分的內部結構。請參照圖1A、圖1B及圖1C,本實施例的光子晶體面射型雷射元件200包括至少一光子晶體面射型雷射單元100(圖1A至圖1C是以一個光子晶體面射型雷射單元100為例),光子晶體面射型雷射單元100包括一發光層120、一光子晶體層130、一摻雜半導體層110及一繞射光柵300。發光層120用以發出一光束122,在本實施例中,發光層120包括量子井層、多重量子井(multiple quantum well)層或量子點(quantum dot)層,而其所發出的光束122可為紅外光、可見光或紫外光。Fig. 1A is a three-dimensional schematic diagram of a photonic crystal surface-emitting laser element of an embodiment of the new creation, Fig. 1B is a schematic top view of the photonic crystal surface-emitting laser element of Fig. 1A, and Fig. 1C is a photonic crystal surface-emitting laser element of Fig. 1B A schematic cross-sectional view of the crystal surface-emitting laser element along the line II, in which in FIG. 1A, the top of the photonic crystal surface-emitting laser element is partially cut to show part of the internal structure. 1A, 1B and 1C, the photonic crystal surface emitting
光子晶體層130配置於發光層120的一側,而摻雜半導體層110配置於發光層120的另一側。在本實施例中,光子晶體層130為P型半導體層,且摻雜半導體層110為N型半導體層。然而,在其他實施例中,也可以是光子晶體層130為N型半導體層,而摻雜半導體層110為P型半導體層。此外,繞射光柵300配置於光子晶體層130上或摻雜半導體層110上,而圖1A與圖1C是以配置於光子晶體層130上為例。The
在本實施例中,光子晶體面射型雷射元件200更包括一第一電極140,電性連接至摻雜半導體層110,其中光子晶體面射型雷射單元100更包括一第二電極150,配置於光子晶體層130上,且電性連接至光子晶體層130。在本實施例中,藉由在第二電極150與第一電極140施加順向偏壓,可使光子晶體層130中的電洞與摻雜半導體層110中的電子遷移至發光層120中,並在發光層120中復合,以產生光束122。In this embodiment, the photonic crystal surface-emitting
發光層120所發出的光束122在光子晶體層130中產生在圖1C中的水平方向的共振,且光子晶體層130可包括二階光柵(grating)的結構,其將光束122往圖1C中的鉛直方向導引,而往圖1C中的上方與下方傳遞。也就是說,發光層120為增益介質,發出光束122並提供光學增益,光束122進入光子晶體層130產生繞射共振後,產生鉛直方向放射的雷射光束。此外,此二階光柵的結構可以是具有二維孔洞陣列的結構。在其他實施例中,光子晶體層130也可以是三階以上的光柵結構,此外,光子晶體層130也可以是一維光柵結構。光束122經由光子晶體層130及繞射光柵300繞射後,從光子晶體面射型雷射單元100出射。在其他實施例中,光子晶體層130也可以包括成對的兩個圓形或矩形孔洞的二維陣列、三角形孔洞陣列或其他各種可能的光子晶體結構。The
在本實施例的光子晶體面射型雷射元件200中,由於採用配置於光子晶體層130上或摻雜半導體層110上的繞射光柵300來繞射經光子晶體層130所繞射出的光束122(即雷射光束),因此可以利用簡單的架構來決定光束122(即雷射光束)的出光偏折方向。In the photonic crystal surface-emitting
在本實施例中,第二電極150的一部分為繞射光柵300。舉例而言,如圖1A與圖1C所繪示,第二電極150的中央部分形成有週期性排列的長條形狹縫152,以形成繞射光柵300。然而,在其他實施例中,第二電極150的中央可以有一開口,而開口中設有以不同於第二電極150的材質形成的繞射光柵300,此繞射光柵300的材質可以是金屬、半導體或氧化物。In this embodiment, a part of the
在本實施例中,光子晶體面射型雷射單元100更包括一透明導電層170,配置於光子晶體層130與第二電極150之間,以電性連接光子晶體層130與第二電極150。在本實施例中,光子晶體面射型雷射元件200更包括一基板160,配置於摻雜半導體層110與第一電極140之間,且電性連接摻雜半導體層110與第一電極140,而基板160具有導電性。In this embodiment, the photonic crystal surface-emitting
在本實施例中,光子晶體層130包括一披覆層(cladding layer)132、一折射率漸變層(graded index layer, GRIN layer)136及一歐姆接觸層134。披覆層132配置於發光層120上,折射率漸變層136配置於披覆層132上。歐姆接觸層134配置於折射率漸變層136與透明導電層170之間,且與透明導電層170接觸以形成歐姆接觸,其中披覆層132、折射率漸變層136及歐姆接觸層134具有光子晶體結構。舉例而言,光子晶體層130具有多個通孔131,位於披覆層132、折射率漸變層136及歐姆接觸層134中,且從披覆層132往歐姆接觸層134延伸,以形成光子晶體結構。在本實施例中,通孔131貫穿歐姆接觸層134、折射率漸變層136與披覆層132。此外,在一實施例中,通孔131可在平行於基板160的方向上排列成二維陣列。在本實施例中,光子晶體面射型雷射單元100更包括一電流限制層180,配置於光子晶體層130與透明導電層170之間,且具有一開口182,其中透明導電層170通過開口182而連接至光子晶體層130。In this embodiment, the
在本實施例中,光子晶體面射型雷射單元100更包括一折射率漸變層190,配置於基板160與摻雜半導體層110之間,其中摻雜半導體層110為披覆層。In this embodiment, the photonic crystal surface-emitting
另外,在圖1B中,繞射光柵300的週期性方向P1是沿著I-I線的方向,然而,在其他實施例中,如圖1D與圖1E,繞射光柵300的週期性方向P1也可以是根據實際所需的光束122的偏折方向而沿著其他方向。In addition, in FIG. 1B, the periodic direction P1 of the diffraction grating 300 is the direction along the II line. However, in other embodiments, as shown in FIGS. 1D and 1E, the periodic direction P1 of the
請再參照圖1A至圖1C,本新型創作並不限制各膜層的材質,在一些實施例中,基板160的材質可以是氮化鎵(gallium nitride, GaN)、砷化鎵(gallium arsenide, GaAs)、、磷化銦(indium phosphide, InP)、銻化鎵(gallium antimonide, GaSb)、砷化銦(indium arsenide, InAs)或其他適當的材質。在其他實施例中,當第一電極140可以電性連接至摻雜半導體層110,而不需透過基板160電性連接至摻雜半導體層110時,基板160可以是半絕緣基板或絕緣基板,如藍寶石基板(sapphire substrate)。發光層120的材質可包括氮化鎵、氮化鋁鎵(aluminum gallium nitride, AlGaN)、砷化鎵、砷化銦鎵(indium gallium arsenide, InGaAs)、砷化鋁鎵(aluminum gallium arsenide, AlGaAs)、磷化鎵(gallium phosphide, GaP)、砷化銦(indium arsenide, InAs)、銻化銦砷(indium arsenic antimonide, InAsSb)、銻化銦鎵砷(indium gallium arsenic antimonide, InGaAsSb)、銻化鋁鎵砷(aluminum gallium arsenic antimonide, AlGaAsSb)、砷磷化銦鎵(indium gallium arsenide phosphide, InGaAsP)、砷化鋁銦鎵(aluminum indium gallium arsenide, AlInGaAs)其他適當的半導體材質或其組合,且發光層120可以採用兩種以上的不同材質或兩種以上的相同化合物但元素比例不同的材質,來形成量子井層、多種量子井層或量子點結構。披覆層132、摻雜半導體層110及折射率漸變層136及190的材質例如是砷化鋁鎵(aluminum gallium arsenide, AlGaAs)、砷化鎵、氮化鋁鎵、砷化鋁鎵銦(aluminum gallium indium arsenide, AlGaInAs)、磷化鋁鎵銦(aluminum gallium indium phosphide, AlGaInP)、銻化鋁鎵砷或其他適當材質。歐姆接觸層134的材質可以是氮化鎵、砷化鎵、砷磷化銦鎵(indium gallium arsenide phosphide, InGaAsP)、砷化銦鎵(indium gallium arsenide, InGaAs)或其他適當的材質。此外,歐姆接觸層134可以重摻雜鈹(beryllium)、碳(carbon)、鋅(zinc)或其組合而形成P型摻雜,以與透明導電層170有良好的歐姆接觸,其中鈹摻雜的濃度可以約為10
19cm
-3,而碳摻雜濃度可以約為10
19cm
-3至10
20cm
-3,且鋅摻雜的濃度可以約為10
19cm
-3至10
20cm
-3,但本新型創作不以此為限。電流限制層180的材質可以是氮化矽(silicon nitride)、氧化矽(silicon oxide)或其他適當的材質,電流限制層180可以阻擋電流,以使電流集中在開口182處並通過開口182。
Please refer to FIGS. 1A to 1C again. The present invention does not limit the material of each film layer. In some embodiments, the material of the
透明導電層170的材料例如為氧化銦錫(indium tin oxide, ITO)、氧化銻錫(antimony tin oxide, ATO)、摻雜氟的氧化錫(fluorine doped tin oxide, FTO)、氧化鋁鋅(aluminum zinc oxide, AZO)、氧化鎵鋅(gallium zinc oxide, GZO)、氧化銦鋅(indium zinc oxide, IZO)、氧化鋅(zinc oxide, ZnO)、石墨烯(graphene)或其他適當的透明導電材料。第一電極140與第二電極150可以是金屬電極,其材質例如是金、鈦金合金、鈦鉑金合金、鎳鍺金合金或其他適當的金屬。透明導電層170可以傳導電流,使電流集中通過開口182,而同時透明導電層170也可以讓發光層120所發出的光束122穿透,而不會遮住光束122。The material of the transparent
此外,在一實施例中,在上述各膜層中,P型摻雜可以是摻雜鈹、碳、鋅或其組合,而其摻雜濃度例如約為10
17cm
-3至10
18cm
-3(除了歐姆接觸層134的摻雜濃度是約為10
19cm
-3至10
20cm
-3之外),而N型摻雜可以是摻雜矽,而其摻雜濃度例如約為10
17cm
-3至10
18cm
-3,但本新型創作不以此為限。在其他實施例中,也可以是摻雜其他適當元素來達成P型摻雜與N型摻雜。
Further, in an embodiment, the above-described film layer, P-type dopant may be doped beryllium, carbon, zinc, or combinations thereof, for example, the dopant concentration of approximately 10 17 cm -3 to 10 cm 18 - 3 (except that the doping concentration of the
在本實施例中,基板160、折射率漸變層190及雜摻半導體層110皆為N型摻雜半導體層,而光子晶體層130包括披覆層132、折射率漸變層136與歐姆接觸層134均為P型摻雜半導體層。然而,在其他實施例中,也可以是基板160、折射率漸變層190及雜摻半導體層110皆為P型摻雜半導體層,而披覆層132、折射率漸變層136與歐姆接觸層134均為N型摻雜半導體層。In this embodiment, the
繞射光柵300的材質可以是金屬、矽、半導體、透明導電層(如氧化銦錫、氧化銦鋅或氧化鋁鋅等)。繞射光柵300可以是一維的光柵(如呈條紋狀)或二維的光柵(如呈線陣列狀、孔洞陣列狀、柱陣列狀或多邊形陣列狀),也可以是微透鏡陣列。The material of the
圖2A為本新型創作的另一實施例的光子晶體面射型雷射元件的剖面示意圖,圖2B是圖2A中的光子晶體層、透明導電層的繞射光柵表面及繞射光柵的簡化立體示意圖。請參照圖2A與圖2B,本實施例的光子晶體面射型雷射元件200a類似於圖1C的光子晶體面射型雷射元件200,而兩者的差異如下所述。在光子晶體面射型雷射元件200a的光子晶體面射型雷射單元100a中,透明導電層170a的背對發光層120的表面為一繞射光柵表面172a。繞射光柵表面172a的週期性方向與繞射光柵300的週期性方向可以相同或不同,而圖2B是以繞射光柵300的週期性方向與繞射光柵表面172a的週期性方向夾一銳角為例。光束122在經過繞射光柵表面172a與繞射光柵300兩次繞射,在偏折角度上可以產生更多的變化。舉例而言,如圖2B所繪示,光束122在經過繞射光柵表面172a的繞射作用後可分為兩道,而這兩道光束122再經過繞射光柵300的繞射作用後,共分出四道光束122。分出的光束122的夾角可由繞射光柵的週期來控制。而如圖1C的光子晶體面射型雷射元件200,由於透明導電層170的背對發光層120的表面為平滑表面,則光束122只經過繞射光柵300的繞射作用而分出兩道光束122。2A is a schematic cross-sectional view of a photonic crystal surface-emitting laser element according to another embodiment of the new creation, and FIG. 2B is a simplified three-dimensional view of the photonic crystal layer, the diffraction grating surface of the transparent conductive layer, and the diffraction grating in FIG. 2A Schematic. 2A and 2B, the photonic crystal surface emitting
在本實施例中,繞射光柵表面172a可以由透明導電層170a的沉積製程在沉積較厚的透明導電層170a時自然形成,也可以是額外藉由蝕刻製程來形成。In this embodiment, the
在一實施例中,繞射光柵表面172a可以是一維的光柵(如呈條紋狀)或二維的光柵(如呈線陣列狀、孔洞陣列狀、柱陣列狀或多邊形陣列狀),也可以是微透鏡陣列。In one embodiment, the
圖3為本新型創作的再一實施例的光子晶體面射型雷射元件的剖面示意圖。請參照圖3,本實施例的光子晶體面射型雷射元件200c類似於圖1C的光子晶體面射型雷射元件200,而兩者的差異如下所述。本實施例的光子晶體面射型雷射元件200c的光子晶體面射型雷射單元100c更包括一分布式布拉格反射鏡(distributed Bragg reflector, DBR)195,配置於摻雜半導體層110與基板160之間,以將從光子晶體層130往圖3下方繞射的光束122往繞射光柵300的方向反射。如此一來,便能夠提升光束122從繞射光柵300出光的光能量,以達到更佳的光利用效率。3 is a schematic cross-sectional view of a photonic crystal surface-emitting laser element according to another embodiment of the new creation. Referring to FIG. 3, the photonic crystal surface emitting
圖4為本新型創作的另一實施例的光子晶體面射型雷射元件的剖面示意圖。請參照圖4,本實施例的光子晶體面射型雷射元件200d類似於圖1C的光子晶體面射型雷射元件200,而兩者的差異如下所述。在本實施例的光子晶體面射型雷射元件200d的光子晶體面射型雷射單元100d中,摻雜半導體層110與第一電極140配置於基板160的同一側上。4 is a schematic cross-sectional view of a photonic crystal surface-emitting laser element according to another embodiment of the new creation. Referring to FIG. 4, the photonic crystal surface emitting
圖5為本新型創作的又一實施例的光子晶體面射型雷射元件的剖面示意圖。請參照圖5,本實施例的光子晶體面射型雷射元件200e類似於圖1C的光子晶體面射型雷射元件200,而兩者的差異如下所述。在本實施例的光子晶體面射型雷射元件200e的光子晶體面射型雷射單元100e中,繞射光柵300配置於摻雜半導體層110的一側上,而在圖5的例子當中,基板160配置於摻雜半導體層110與繞射光柵300之間。在本實施例中,繞射光柵300可為第一電極140的一部分,也就是第一電極140的中央具有週期性排列的長條形狹縫142,以形成繞射光柵300。或者,在其他實施例中,繞射光柵300的材質也可以是不同於第一電極140的其他金屬、半導體或氧化物,第一電極140中央有一開口,而繞射光柵300配置於此開口中。5 is a schematic cross-sectional view of a photonic crystal surface-emitting laser element according to another embodiment of the new creation. Referring to FIG. 5, the photonic crystal surface emitting
另一方面,在本實施例中,第二電極150e則覆蓋光子晶體層130,而光束122往圖5的下方出光。On the other hand, in this embodiment, the
圖6為本新型創作的再一實施例的光子晶體面射型雷射元件的剖面示意圖。請參照圖6,本實施例的光子晶體面射型雷射元件200f類似於圖5的光子晶體面射型雷射元件200e,而兩者的差異如下所述。在本實施例的光子晶體面射型雷射元件200f的光子晶體面射型雷射單元100f中,摻雜半導體層110與第一電極140配置於基板160的同一側上,而繞射光柵300與第一電極140分別配置於基板160的相對兩側。6 is a schematic cross-sectional view of a photonic crystal surface-emitting laser element according to another embodiment of the new creation. Referring to FIG. 6, the photonic crystal surface emitting
圖7為本新型創作的再一實施例的光子晶體面射型雷射元件的剖面示意圖。請參照圖7,本實施例的光子晶體面射型雷射元件200g類似於圖5的光子晶體面射型雷射元件200e,而兩者的差異如下所述。在本實施例的光子晶體面射型雷射元件200g的光子晶體面射型雷射單元100g中,基板160g的背對於發光層120的表面具有繞射光柵表面結構162g,以形成繞射光柵300g。FIG. 7 is a schematic cross-sectional view of a photonic crystal surface-emitting laser element according to another embodiment of the new creation. Referring to FIG. 7, the photonic crystal surface emitting
圖8為本新型創作的另一實施例的光子晶體面射型雷射元件的剖面示意圖。請參照圖8,本實施例的光子晶體面射型雷射元件200h類似於圖6的光子晶體面射型雷射元件200f,而兩者的差異如下所述。在本實施例的光子晶體面射型雷射元件200h的光子晶體面射型雷射單元100h中,基板160h的背對於發光層120的表面具有繞射光柵表面結構162h,以形成繞射光柵300h。FIG. 8 is a schematic cross-sectional view of a photonic crystal surface-emitting laser element according to another embodiment of the new creation. Please refer to FIG. 8, the photonic crystal surface emitting
圖9為本新型創作的又一實施例的光子晶體面射型雷射元件的剖面示意圖。請參照圖9,本實施例的光子晶體面射型雷射元件200j類似於圖1C的光子晶體面射型雷射元件200,而兩者的差異如下所述。在本實施例的光子晶體面射型雷射元件200j的光子晶體面射型雷射單元100j中,披覆層132j具有光子晶體結構,而其上被覆蓋有半導體層132’。半導體層132’的材質類似或相同於披覆層132j的材質,可以隨著披覆層132j而為P型或N型摻雜半導體層。半導體層132’上可依序設置有折射率漸變層136j與歐姆接觸層134j。電流限制層180覆蓋半導體層132’與歐姆接觸層134j的邊緣,且其開口182暴露出歐姆接觸層134j的中央。第二電極150透過開口182連接至歐姆接觸層134j,而繞射光柵300位於歐姆接觸層134j的中央。9 is a schematic cross-sectional view of a photonic crystal surface-emitting laser element according to another embodiment of the new creation. Referring to FIG. 9, the photonic crystal surface emitting
圖10為本新型創作的又一實施例的光子晶體面射型雷射元件的剖面示意圖。請參照圖10,本實施例的光子晶體面射型雷射元件200k類似於圖5的光子晶體面射型雷射元件200e及圖9的光子晶體面射型雷射元件200j,而其差異如下所述。在本實施例的光子晶體面射型雷射元件200k的光子晶體面射型雷射單元100k中,是以圖9的披覆層132j、半導體層132’、折射率漸變層136j與歐姆接觸層134j來取代圖5的光子晶體層130,且光子晶體面射型雷射單元100k不包含透明導電層170,而第二電極150k經由開口182連接至歐姆接觸層134j。10 is a schematic cross-sectional view of a photonic crystal surface-emitting laser element according to another embodiment of the new creation. 10, the photonic crystal surface emitting
圖11為本新型創作的再一實施例的光子晶體面射型雷射元件的剖面示意圖。請參照圖11,本實施例的光子晶體面射型雷射元件200m類似於圖10的光子晶體面射型雷射元件200k,而兩者的差異如下所述。本實施例的光子晶體面射型雷射元件200m的光子晶體面射型雷射單元100m更包括分布式布拉格反射鏡195,配置於半導體層132’與折射率漸變層136j之間。FIG. 11 is a schematic cross-sectional view of a photonic crystal surface-emitting laser element according to another embodiment of the new creation. Referring to FIG. 11, the photonic crystal surface emitting
在其他實施例中,圖6、圖7、圖8中的光子晶體層130及其上面的結構也可以如圖10或圖11那樣,改成披覆層132j、半導體層132’、折射率漸變層136j、歐姆接觸層134j及第二電極150k,且不具有透明導電層170,也就是圖6、圖7、圖8的發光層120以上的結構可以置換為如圖10或圖11中發光層120以上的結構,以形層另外6種光子晶體面射型雷射單元。In other embodiments, the
圖12為本新型創作的又一實施例的光子晶體面射型雷射元件的剖面示意圖。請參照圖12,本實施例的光子晶體面射型雷射元件200i類似於圖1A的光子晶體面射型雷射元件200,而兩者的差異如下所述。本實施例的光子晶體面射型雷射元件200i包括多個排成陣列的光子晶體面射型雷射單元100,圖12中是以2×2個光子晶體面射型雷射單元100為例,然而,在其他實施例中,可以是M×N個光子晶體面射型雷射單元100,其中M與N為任意正整數。舉例而言,在一實施例中,光子晶體面射型雷射元件200i可包括10×10個光子晶體面射型雷射單元100。這些光子晶體面射型雷射單元100的多個繞射光柵300的週期與排列方向的至少其中之一不相同。舉例而言,圖12中的繞射光柵3001、3002、3003及3004的週期或排列方向(即週期方向)皆不相同,例如可採用如圖1B至圖1E那樣的不同的週期方向P1,以形成不同的光束122的出光方向。12 is a schematic cross-sectional view of a photonic crystal surface-emitting laser element according to another embodiment of the new creation. Referring to FIG. 12, the photonic crystal surface emitting
在本實施例中,這些光子晶體面射型雷射單元100電性連接至一控制器210,控制器210可個別且獨立地控制這些光子晶體面射型雷射單元100的發光。舉例而言,由於這些光子晶體面射型雷射單元100的發光方向不同,控制器210可依序使這些光子晶體面射型雷射單元100發出不同方向的光束122(即雷射光束),以達到光束掃描的效果。由於這樣的光束掃描是電控的,而不是還要經過機械控制的,所以會有較快的掃描速度、較高的可靠度及較佳的耐用性。這樣的光子晶體面射型雷射元件200i可應用於光偵測及測距,如應用於光達(lidar)或三維感測,而有速度快、可靠度佳、耐用性高等優點。此外,這種不憑藉機械作動、高功率、高光束品質且可達到二維掃描的雷射(即光子晶體面射型雷射元件200i)還可應用於智能交通(smart mobility)的感測系統、物體辨識系統或適應性照明等。In this embodiment, the photonic crystal surface-emitting
在本實施例中,控制器210可通過硬體描述語言(Hardware Description Languages,HDL)或本領域技術人員熟悉的數位電路、類比電路的任何其他設計方式來設計,並且硬體電路可通過現場可程式閘陣列(Field Programmable Gate Array,FPGA)、複雜可程式邏輯裝置(Complex Programmable Logic Device,CPLD)或專用積體電路(Application-Specific Integrated Circuit,ASIC)而實現。In this embodiment, the
此外,光子晶體面射型雷射元件200i中的光子晶體面射型雷射單元100,也可以採用上述其他實施例的光子晶體面射型雷射單元(例如光子晶體面射型雷射單元100a~100h)來取代,以形成各種具有排成陣列的光子晶體面射型雷射單元的光子晶體面射型雷射元件。In addition, the photonic crystal surface emitting
綜上所述,在本新型創作的實施例的光子晶體面射型雷射元件中,由於採用配置於光子晶體層上或摻雜半導體層上的繞射光柵來繞射經光子晶體層所繞射出的雷射光束,因此可以利用簡單的架構來決定雷射光束的出光偏折方向。本新型創作的一實施例的光子晶體面射型雷射元件可包括多個排成陣列的光子晶體面射型雷射單元,這些光子晶體面射型雷射單元的多個繞射光柵的週期與排列方向的至少其中之一不相同。由於這些光子晶體面射型雷射單元的發光方向不同,可藉由控制器依序使這些光子晶體面射型雷射單元發出不同方向的雷射光束,以達到光束掃描的效果。由於這樣的光束掃描是電控的,而不是還要經過機械控制的,所以會有較快的掃描速度、較高的可靠度及較佳的耐用性。這樣的光子晶體面射型雷射元件可應用於光偵測及測距,如應用於光達或三維感測,而有速度快、可靠度佳、耐用性高等優點。To sum up, in the photonic crystal surface-emitting laser element of the embodiment of the present invention, the diffraction grating arranged on the photonic crystal layer or the doped semiconductor layer is used to diffract the photonic crystal layer. Therefore, a simple structure can be used to determine the deflection direction of the laser beam. The photonic crystal surface emitting laser element of an embodiment of the present invention may include a plurality of photonic crystal surface emitting laser units arranged in an array, and the period of the multiple diffraction gratings of these photonic crystal surface emitting laser units It is different from at least one of the arrangement directions. Since the light-emitting directions of these photonic crystal surface-emitting laser units are different, the controller can sequentially cause the photonic crystal surface-emitting laser units to emit laser beams in different directions to achieve the beam scanning effect. Since such beam scanning is electronically controlled, rather than mechanically controlled, it will have a faster scanning speed, higher reliability and better durability. Such photonic crystal surface-emitting laser elements can be applied to light detection and ranging, such as lidar or three-dimensional sensing, and have the advantages of high speed, high reliability, and high durability.
100、100a、100c、100d、100e、100f、100g、100h、100j、100k、100m:光子晶體面射型雷射單元
110:摻雜半導體層
120:發光層
122:光束
130:光子晶體層
131:通孔
132、132j:披覆層
132’:半導體層
134、134j:歐姆接觸層
136、136j、190:折射率漸變層
140:第一電極
142、152:長條形狹縫
150、150e、150k:第二電極
160、160g、160h:基板
162g、162h:繞射光柵表面結構
170、170a:透明導電層
172a:繞射光柵表面
180:電流限制層
182:開口
195:分布式布拉格反射鏡
200、200a、200c、200d、200e、200f、200g、200h、200i、200j、200k、200m:光子晶體面射型雷射元件
210:控制器
300、300g、300h、3001、3002、3003、3004:繞射光柵
P1:週期性方向
100, 100a, 100c, 100d, 100e, 100f, 100g, 100h, 100j, 100k, 100m: photonic crystal surface-emitting laser unit
110: doped semiconductor layer
120: luminescent layer
122: beam
130: Photonic crystal layer
131: Through
圖1A為本新型創作的一實施例的光子晶體面射型雷射元件的立體示意圖。 圖1B為圖1A的光子晶體面射型雷射元件的上視示意圖。 圖1C為圖1B的光子晶體面射型雷射元件沿著I-I線的剖面示意圖。 圖1D與圖1E分別為本新型創作的另兩個實施例的光子晶體面射型雷射元件的上視示意圖。 圖2A為本新型創作的另一實施例的光子晶體面射型雷射元件的剖面示意圖。 圖2B是圖2A中的光子晶體層、透明導電層的繞射光柵表面及繞射光柵的簡化立體示意圖。 圖3為本新型創作的再一實施例的光子晶體面射型雷射元件的剖面示意圖。 圖4為本新型創作的另一實施例的光子晶體面射型雷射元件的剖面示意圖。 圖5為本新型創作的又一實施例的光子晶體面射型雷射元件的剖面示意圖。 圖6為本新型創作的再一實施例的光子晶體面射型雷射元件的剖面示意圖。 圖7為本新型創作的再一實施例的光子晶體面射型雷射元件的剖面示意圖。 圖8為本新型創作的另一實施例的光子晶體面射型雷射元件的剖面示意圖。 圖9為本新型創作的又一實施例的光子晶體面射型雷射元件的剖面示意圖。 圖10為本新型創作的又一實施例的光子晶體面射型雷射元件的剖面示意圖。 圖11為本新型創作的再一實施例的光子晶體面射型雷射元件的剖面示意圖。 圖12為本新型創作的又一實施例的光子晶體面射型雷射元件的剖面示意圖。 FIG. 1A is a three-dimensional schematic diagram of a photonic crystal surface-emitting laser element according to an embodiment of the new creation. FIG. 1B is a schematic top view of the photonic crystal surface-emitting laser element of FIG. 1A. FIG. 1C is a schematic cross-sectional view of the photonic crystal surface-emitting laser element of FIG. 1B along the line I-I. FIG. 1D and FIG. 1E are schematic top views of the photonic crystal surface-emitting laser elements of two other embodiments created by the new type, respectively. 2A is a schematic cross-sectional view of a photonic crystal surface-emitting laser element according to another embodiment of the new creation. 2B is a simplified three-dimensional schematic diagram of the photonic crystal layer, the diffraction grating surface of the transparent conductive layer, and the diffraction grating in FIG. 2A. 3 is a schematic cross-sectional view of a photonic crystal surface-emitting laser element according to another embodiment of the new creation. 4 is a schematic cross-sectional view of a photonic crystal surface-emitting laser element according to another embodiment of the new creation. 5 is a schematic cross-sectional view of a photonic crystal surface-emitting laser element according to another embodiment of the new creation. 6 is a schematic cross-sectional view of a photonic crystal surface-emitting laser element according to another embodiment of the new creation. FIG. 7 is a schematic cross-sectional view of a photonic crystal surface-emitting laser element according to another embodiment of the new creation. FIG. 8 is a schematic cross-sectional view of a photonic crystal surface-emitting laser element according to another embodiment of the new creation. 9 is a schematic cross-sectional view of a photonic crystal surface-emitting laser element according to another embodiment of the new creation. 10 is a schematic cross-sectional view of a photonic crystal surface-emitting laser element according to another embodiment of the new creation. FIG. 11 is a schematic cross-sectional view of a photonic crystal surface-emitting laser element according to another embodiment of the new creation. 12 is a schematic cross-sectional view of a photonic crystal surface-emitting laser element according to another embodiment of the new creation.
100:光子晶體面射型雷射單元 100: Photonic crystal surface-emitting laser unit
110:摻雜半導體層 110: doped semiconductor layer
120:發光層 120: luminescent layer
122:光束 122: beam
130:光子晶體層 130: Photonic crystal layer
131:通孔 131: Through hole
132:披覆層 132: Overlay
134:歐姆接觸層 134: Ohmic contact layer
136、190:折射率漸變層 136, 190: Refractive index graded layer
140:第一電極 140: first electrode
150:第二電極 150: second electrode
152:長條形狹縫 152: Long slit
160:基板 160: substrate
170:透明導電層 170: Transparent conductive layer
180:電流限制層 180: current limiting layer
182:開口 182: open
200:光子晶體面射型雷射元件 200: Photonic crystal surface emitting laser element
300:繞射光柵 300: Diffraction grating
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TW110205227U TWM615662U (en) | 2021-04-01 | 2021-05-10 | Photonic crystal surface emitting laser device |
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Cited By (2)
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TWI791217B (en) * | 2021-04-01 | 2023-02-01 | 富昱晶雷射科技股份有限公司 | Photonic crystal surface emitting laser device |
US11881674B2 (en) * | 2021-07-21 | 2024-01-23 | Kabushiki Kaisha Toshiba | Surface-emitting semiconductor light-emitting device |
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WO2006062084A1 (en) * | 2004-12-08 | 2006-06-15 | Sumitomo Electric Industries, Ltd. | Semiconductor laser device and method for manufacturing same |
JP6213915B2 (en) * | 2013-03-04 | 2017-10-18 | 国立大学法人京都大学 | Semiconductor laser element |
TWI698057B (en) * | 2018-02-13 | 2020-07-01 | 國立交通大學 | Two-dimensional photonic crystal laser with transparent oxide conducting cladding layers |
JP7279875B2 (en) * | 2018-09-03 | 2023-05-23 | 国立大学法人京都大学 | Surface-emitting laser element and method for manufacturing surface-emitting laser element |
CN110247302B (en) * | 2019-07-09 | 2020-12-01 | 华中科技大学 | Surface emitting laser based on surface grating |
TWI791217B (en) * | 2021-04-01 | 2023-02-01 | 富昱晶雷射科技股份有限公司 | Photonic crystal surface emitting laser device |
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Cited By (2)
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TWI791217B (en) * | 2021-04-01 | 2023-02-01 | 富昱晶雷射科技股份有限公司 | Photonic crystal surface emitting laser device |
US11881674B2 (en) * | 2021-07-21 | 2024-01-23 | Kabushiki Kaisha Toshiba | Surface-emitting semiconductor light-emitting device |
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