TWM611114U - Injector of vertical furnace for low pressure chemical vapor deposition (lpcvd) system - Google Patents
Injector of vertical furnace for low pressure chemical vapor deposition (lpcvd) system Download PDFInfo
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- TWM611114U TWM611114U TW109213299U TW109213299U TWM611114U TW M611114 U TWM611114 U TW M611114U TW 109213299 U TW109213299 U TW 109213299U TW 109213299 U TW109213299 U TW 109213299U TW M611114 U TWM611114 U TW M611114U
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Abstract
Description
本創作關於氣體注射器，具體而言係關於用於低壓化學氣相沉積(LPCVD)系統的立式爐管之氣體注射器。 This creation is about gas injectors, specifically about gas injectors used in vertical furnace tubes of low pressure chemical vapor deposition (LPCVD) systems.
爐管設備廣泛地被應用在半導體製程中，例如擴散、氧化、及熱處理等；其中，擴散製程主要是藉由爐管設備中的注射器將特殊氣體通入至腔體中，並在腔體內的基板(例如半導體晶圓)上發生反應而生成薄膜。當透過擴散製程而產生薄膜時，通常期望能達到有較佳的薄膜均勻性之沉積及較少的微粒產生。 Furnace tube equipment is widely used in semiconductor manufacturing processes, such as diffusion, oxidation, and heat treatment. Among them, the diffusion process is mainly through the injection of special gas into the cavity through the injector in the furnace tube equipment, and in the cavity A reaction occurs on the substrate (for example, a semiconductor wafer) to form a thin film. When a film is produced through a diffusion process, it is generally desired to achieve deposition with better film uniformity and less particle generation.
如上述，在擴散製程中需要將反應氣體透過注射器導入爐管腔體中，並使反應氣體擴散至基板上以生成所需之薄膜。因此，反應氣體在爐管中的分佈係至關重要的。顧名思義，立式爐管的反應器係以直立的方式配置。在習知的立式爐管中，反應氣體係透過具水平面輸出端之注射器而導入至爐管(腔體)中。然而，這種設計的氣體注射器使得反應氣體無法在爐管腔體中達到最佳的擴散效果，因而導致所產生之薄膜品質可能非理想，常見的非理想情況包含不佳的薄膜均勻性及過多微粒的產生。 As mentioned above, in the diffusion process, the reaction gas needs to be introduced into the furnace tube cavity through the syringe, and the reaction gas is diffused onto the substrate to form the required thin film. Therefore, the distribution of the reaction gas in the furnace tube is very important. As the name implies, the reactor of the vertical furnace tube is arranged in an upright manner. In the conventional vertical furnace tube, the reaction gas system is introduced into the furnace tube (cavity) through an injector with a horizontal output end. However, the gas injector of this design makes the reaction gas unable to achieve the best diffusion effect in the furnace tube cavity, so the quality of the produced film may not be ideal. Common non-ideal conditions include poor film uniformity and excessive The production of particles.
在此背景下產生本創作。 This creation was produced in this context.
有鑒於此，依據本創作之實施例而提供一種用於立式爐管之氣體注射器，其由兩管體部分所組成：第一管體部分具有注射器的輸入端，第二管體則具有注射器的輸出端；兩管體間係以加工手法形成九十度角之流體連接。該氣體注射器之設置方式是將第一管體部分水平安裝在立式爐管的氣體輸入端、第二部分係沿著該立式爐管之延伸方向延伸。此外，該第二管體的輸出端具有一斜面，且此斜面之開口部在該立式爐管的徑向方向上由內往外、由上往下傾斜。因此，整體注射器大致上被設置於立式爐管之內壁與承載晶圓的晶舟之間。 In view of this, a gas injector for a vertical furnace tube is provided according to the embodiment of the invention, which is composed of two tube body parts: the first tube body part has the input end of the syringe, and the second tube body has the syringe The output end of the two pipes is formed by a processing technique to form a fluid connection with a 90-degree angle. The arrangement of the gas injector is that the first part of the tube is horizontally installed at the gas input end of the vertical furnace tube, and the second part is extended along the extension direction of the vertical furnace tube. In addition, the output end of the second tube body has a slope, and the opening of the slope is inclined from the inside to the outside and from the top to the bottom in the radial direction of the vertical furnace tube. Therefore, the integral injector is generally arranged between the inner wall of the vertical furnace tube and the wafer boat carrying the wafer.
在一實施例中，該氣體注射器係由石英材料所製成。在一實施例中，該斜面與水平面之間的角度係介於30°至60°之間。在一實施例中，該斜面與水平面之間的角度為約45°。在一實施例中，該第一管體部分係實質上垂直於該第二管體部分。 In one embodiment, the gas injector is made of quartz material. In one embodiment, the angle between the inclined plane and the horizontal plane is between 30° and 60°. In one embodiment, the angle between the inclined surface and the horizontal plane is about 45°. In one embodiment, the first tube part is substantially perpendicular to the second tube part.
依據本創作之實施例而提供一種立式爐管，其包含一外管、一內管、一晶舟、以及複數氣體注射器。該內管係設置於該外管之內部。該晶舟係設置於該內管之內部且用以承載晶圓。在一實施例中，複數該氣體注射器係彼此相隔一預定距離而並排設置。在一實施例中，該立式爐管包含三個氣體注射器，其中該等氣體注射器之各者的第二管體部分之長度分別為約500mm、約850mm、及約1050mm。在一實施例中，該等氣體注射器係以由短至長之順序而並排設置。 According to an embodiment of the present invention, a vertical furnace tube is provided, which includes an outer tube, an inner tube, a wafer boat, and a plurality of gas injectors. The inner tube is arranged inside the outer tube. The wafer boat is arranged inside the inner tube and used to carry wafers. In one embodiment, a plurality of the gas injectors are arranged side by side with a predetermined distance apart from each other. In one embodiment, the vertical furnace tube includes three gas injectors, and the length of the second tube portion of each of the gas injectors is about 500 mm, about 850 mm, and about 1050 mm, respectively. In one embodiment, the gas injectors are arranged side by side in order from short to long.
藉由以下配合隨附圖式所述之詳細說明，將更清楚本創作的其他態樣。 Through the following detailed description with accompanying drawings, other aspects of this creation will be clearer.
100:立式爐管 100: Vertical furnace tube
102:外管 102: Outer tube
104:內管 104: inner tube
106:晶舟 106: Crystal Boat
108:氣體注射器 108: Gas Syringe
110:基座 110: Pedestal
112:氣體供應部 112: Gas Supply Department
122:第一管體部分 122: The first tube body part
124:輸入端 124: Input
132:第二管體部分 132: The second tube body part
134:輸出端 134: output
136:斜面 136: Slope
參考以下配合隨附圖式所做的詳細描述將可更透徹理解所描述之實施例及其優點。該等圖式並不限制熟悉本技藝者在不超出實施例之精神及範圍下對描述之實施例做出形式及細節上的改變。 With reference to the following detailed description with accompanying drawings, the described embodiments and their advantages can be more thoroughly understood. The drawings do not limit those skilled in the art to make changes in form and details of the described embodiments without departing from the spirit and scope of the embodiments.
圖1為依據本創作之一實施例之立式爐管之概略示意圖。 Figure 1 is a schematic diagram of a vertical furnace tube according to an embodiment of the invention.
圖2顯示依據本創作之一實施例之氣體注射器之側視圖。 Figure 2 shows a side view of a gas injector according to an embodiment of the invention.
圖3顯示依據本創作之一實施例之氣體注射器之立體圖。 Figure 3 shows a three-dimensional view of a gas injector according to an embodiment of the invention.
在本創作之圖式中，元件符號可能重複使用，以標示類似及/或相同的元件。 In the drawings of this creation, component symbols may be used repeatedly to indicate similar and/or identical components.
本創作之目的、優點和特色由以下數個實施例之詳細說明及伴隨的圖式當可更加明白。 The purpose, advantages and features of this creation can be more clearly understood from the detailed description of the following several embodiments and accompanying drawings.
為了更清楚地了解本創作之實施方式，在以下的敘述中，將提出許多特定細節。然而，即使缺乏該等細節之一部分或全部，所揭示的實施例亦可實施。在某些情況下，則不詳細說明習知的結構及操作方式，以避免不必要地模糊了所揭示的實施例。雖然為了說明之目的而提出許多特定細節，但應當了解，其並非用來限制所揭示的實施例。當以相對性的術語(例如，「上」與「下」、「頂」與「底」、「內」與「外」等)來描述特定實施例時，這些 術語僅僅是為了方便理解，其並非用來做為限制。此外，應當了解，圖中所示之各種實施例是示意性的，且不一定按照比例繪製。 In order to understand the implementation of this creation more clearly, in the following description, many specific details will be presented. However, even if part or all of these details are lacking, the disclosed embodiments can be implemented. In some cases, the conventional structure and operation method are not described in detail to avoid unnecessarily obscuring the disclosed embodiments. Although many specific details are presented for illustrative purposes, it should be understood that they are not used to limit the disclosed embodiments. When relative terms (for example, "upper" and "lower", "top" and "bottom", "inner" and "outer", etc.) are used to describe specific embodiments, these The terminology is only for the convenience of understanding, and is not used as a limitation. In addition, it should be understood that the various embodiments shown in the figures are schematic and are not necessarily drawn to scale.
依據本創作之一實施例，圖1為立式爐管100之概略示意圖。如所屬技術領域中具通常知識者所理解，此立式爐管100可應用於低壓化學氣相沉積(LPCVD)系統中。如圖1所示，立式爐管100包含外管102、內管104、晶舟106、氣體注射器108、基座110、以及氣體供應部112。其中，內管104係設置於外管102內，且外管102與內管104係以同心圓形式而加以配置，且外管102與內管104之間相隔一預定距離。在一些實施例中，外管102與內管104係由石英材料所製成。此外，晶舟106係設置於內管104之內、基座110之上，並且用以將待處理之晶圓水平地承載於其上。在一些實施例中，晶舟106係由石英所製成。氣體注射器108係用以將一或更多反應氣體從氣體供應部112輸送至立式爐管100之內部。以下將藉由圖2及圖3來說明本創作之氣體注射器108之各種實施例。
According to an embodiment of the invention, FIG. 1 is a schematic diagram of a
依據本創作之一實施例，圖2及圖3分別顯示氣體注射器108之側視圖及立體圖。氣體注射器108包含第一管體部分122及第二管體部分132，其中第一管體部分122具有一輸入端124，而第二管體部分132具有一輸出端134，第一管體部分122與第二管體部分132係流體連接。在一些實施例中，第一管體部分122係實質上垂直於第二管體部分132，亦即，氣體注射器108實質上呈L型。然而，應理解，第一管體部分122未必需垂直於第二管體部分132。當安裝於立式爐管中時，輸入端124係流體連接至氣體供應部112，俾使所需之一或更多反應氣體能從氣體供應部112經過輸入端124及輸出端134而輸送至立式爐管100內、並進一步擴散至位在晶舟106上的晶圓上。氣體
注射器108係以如圖1所示之方式設置，以使第二管體部分132位在立式爐管100的內管104與晶舟106之間，且第二管體部分132沿著立式爐管100之延伸方向延伸。此外，第二管體部分132的輸出端134具有一斜面136，且該斜面136在該立式爐管100之徑向方向上由內往外而向下傾斜。
According to an embodiment of the present invention, FIGS. 2 and 3 show a side view and a three-dimensional view of the
透過使用具有以如上方式傾斜之斜面輸出端的氣體注射器108，可改善反應氣體的擴散均勻性、並可使不樂見的晶圓上之微粒(particle)減少。在一較佳實施例中，斜面136與水平面之間的角度係介於30°至60°之間。在另一較佳實施例中，斜面136與水平面之間的角度為約45°。
By using the
在一些實施例中，氣體注射器108可由石英(例如GE214、GE224之石英)所製成。然而，應理解，氣體注射器108可由任何的其他合適材料所製成。此外，氣體注射器108可經加工使內、外管壁具有光滑表面，並且在尖銳及/或尖角處可經加工以使其圓滑。
In some embodiments, the
在一些實施例中，立式爐管100中可包含複數的氣體注射器108，且該等氣體注射器108可彼此相隔一預定距離而並排設置，例如相隔約50mm。為了使反應氣體在立式爐管100中更均勻地分佈，該等氣體注射器108之各者的第二管體部分132可具有不同的長度。舉例而言，可將該等氣體注射器108以由短至長之順序並排設置。在一特定實施例中，立式爐管100中包含三個氣體注射器108，且該等氣體注射器108之各者的第二管體部分132之長度分別為約500mm、約850mm、及約1050mm。
In some embodiments, the
相較於習知的立式爐管之氣體注射器(其輸出端為一水平面)，本創作採用具有一斜面輸出端的氣體注射器108，因此能獲得以下有利功效：使得反應氣體在經由氣體注射器108而輸送進入立式爐管100中時，反應氣體
的擴散均勻性提高，從而改善所沉積之薄膜的厚度均勻性；並且亦可使在處理期間產生之晶圓上之粒子減少，進而使晶圓缺陷減少。
Compared with the conventional gas injector of the vertical furnace tube (the output end of which is a horizontal plane), the present invention adopts the
儘管上述實施例已為了清楚理解之目的而詳細地加以描述，但顯然地，在所附申請專利範圍之範疇中，可實行某些變更及修改。應當注意，有許多替代的方式來實施本案實施例之方法及設備。因此，本案實施例應被視為是用於說明的而不是限制性的，且本案實施例不應被限制於本文中所提出之特定細節。 Although the above embodiments have been described in detail for the purpose of clear understanding, it is obvious that certain changes and modifications can be implemented within the scope of the appended patent application. It should be noted that there are many alternative ways to implement the method and equipment of the embodiment of this case. Therefore, the embodiments of this case should be regarded as illustrative rather than restrictive, and the embodiments of this case should not be limited to the specific details set forth herein.
應當瞭解，本文中所述之結構及/或方法在本質上為示例性的，這些特定的實施例或範例不應被視為是限制性的，因為可能有各種變化。本文中所述之特定操作或方法可代表任何數目之處理方案其中一或多者。因此，所述之各種操作可以所述的順序、以其它順序、以平行方式進行，或在某些例子中加以省略。類似地，上述操作之順序可加以改變。 It should be understood that the structures and/or methods described herein are exemplary in nature, and these specific embodiments or examples should not be regarded as restrictive, as there may be various changes. The specific operations or methods described herein can represent one or more of any number of processing schemes. Therefore, the various operations described may be performed in the stated order, in other orders, in a parallel manner, or omitted in some examples. Similarly, the sequence of the above operations can be changed.
本揭示內容之標的包括在本文中所揭示之各種處理及結構、以及其它特徵、功能、動作、及/或特性之所有新穎及非顯而易見的組合與次組合，以及其任何及所有的均等物。 The subject of this disclosure includes all novel and non-obvious combinations and sub-combinations of the various processes and structures disclosed herein, as well as other features, functions, actions, and/or characteristics, and any and all equivalents thereof.
100:立式爐管 100: Vertical furnace tube
102:外管 102: Outer tube
104:內管 104: inner tube
106:晶舟 106: Crystal Boat
108:氣體注射器 108: Gas Syringe
110:基座 110: Pedestal
112:氣體供應部 112: Gas Supply Department
Claims (10)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW109213299U TWM611114U (en) | 2020-10-12 | 2020-10-12 | Injector of vertical furnace for low pressure chemical vapor deposition (lpcvd) system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| TW109213299U TWM611114U (en) | 2020-10-12 | 2020-10-12 | Injector of vertical furnace for low pressure chemical vapor deposition (lpcvd) system |
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| Publication Number | Publication Date |
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| TWM611114U true TWM611114U (en) | 2021-05-01 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113539778A (en) * | 2021-07-13 | 2021-10-22 | 长鑫存储技术有限公司 | Gas injector and diffusion furnace tube equipment |
| TWI752671B (en) * | 2020-10-12 | 2022-01-11 | 松勁科技股份有限公司 | Injector of vertical furnace for low pressure chemical vapor deposition (lpcvd) system |
-
2020
- 2020-10-12 TW TW109213299U patent/TWM611114U/en unknown
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI752671B (en) * | 2020-10-12 | 2022-01-11 | 松勁科技股份有限公司 | Injector of vertical furnace for low pressure chemical vapor deposition (lpcvd) system |
| CN113539778A (en) * | 2021-07-13 | 2021-10-22 | 长鑫存储技术有限公司 | Gas injector and diffusion furnace tube equipment |
| WO2023284101A1 (en) * | 2021-07-13 | 2023-01-19 | 长鑫存储技术有限公司 | Gas injector and diffusion furnace tube device |
| CN113539778B (en) * | 2021-07-13 | 2023-02-17 | 长鑫存储技术有限公司 | Gas injector and diffusion furnace tube equipment |
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