TWM607681U - Lithography system - Google Patents

Abstract

本創作公開一種光刻系統。光刻系統包括一第一無塵腔體、設置於第一無塵腔體中的一光阻塗佈裝置、一第二無塵腔體、設置於第二無塵腔體中的一固化裝置、設置於第二無塵腔體中的一顯影設備、設置於第二無塵腔體中的一蝕刻設備、以及一推車。本創作所提供的光刻系統能通過“第一無塵腔體以及第二無塵腔體用來避免金屬滾輪被環境中的汙染源黏附”的技術方案，以避免金屬滾輪被環境中的汙染源汙染，並使金屬滾輪的製造良率大幅提升。This creation discloses a lithography system. The lithography system includes a first dust-free cavity, a photoresist coating device arranged in the first dust-free cavity, a second dust-free cavity, and a curing device arranged in the second dust-free cavity , A developing device arranged in the second dust-free cavity, an etching device arranged in the second dust-free cavity, and a cart. The lithography system provided by this creation can prevent the metal roller from being polluted by the pollution source in the environment through the technical solution of "the first dust-free cavity and the second dust-free cavity are used to prevent the metal roller from being adhered by the pollution source in the environment" , And greatly improve the manufacturing yield of metal rollers.

Description

光刻系統Lithography system

本創作涉及一種光刻系統，特別是涉及一種無塵光刻系統。This creation relates to a lithography system, especially to a dust-free lithography system.

現有的滾輪光阻塗佈設備經常在一金屬滾輪的外表面設置一光阻層後，就需要將所述金屬滾輪轉移至下一階段的製程設備中（如：滾輪顯影設備、滾輪光刻設備）。然而，在所述金屬滾輪的轉移過程中，經常會因為環境中的汙染源汙染了所述金屬滾輪，導致所述金屬滾輪於後續製程中的良率大幅下降。Existing roller photoresist coating equipment often installs a photoresist layer on the outer surface of a metal roller, and then the metal roller needs to be transferred to the next stage of the process equipment (such as: roller developing equipment, roller photolithography equipment) ). However, during the transfer process of the metal roller, pollution sources in the environment often contaminate the metal roller, resulting in a substantial decrease in the yield of the metal roller in the subsequent manufacturing process.

故，如何通過結構設計的改良，來克服上述的缺陷，已成為該項事業所欲解決的重要課題之一。Therefore, how to overcome the above-mentioned shortcomings through the improvement of structural design has become one of the important issues to be solved by this business.

本創作實施例針對現有技術的不足提供一種光刻系統，其能有效地改善現有的滾輪光刻系統所可能產生的缺陷。This creative embodiment provides a lithography system for the shortcomings of the prior art, which can effectively improve the possible defects of the existing roller lithography system.

本創作實施例公開一種光刻系統，用來在一金屬滾輪的外表面上形成一壓印層，所述光刻系統包括：一第一無塵腔體，用來避免所述金屬滾輪被環境中的汙染源黏附，並且所述第一無塵腔體包含一第一滾輪固定裝置，其用來夾持並轉動所述金屬滾輪；一光阻塗佈裝置，設置於所述第一無塵腔體中，並且所述光阻塗佈裝置用來在所述金屬滾輪的所述外表面上塗佈一光阻層；一第二無塵腔體，用來避免所述金屬滾輪被環境中的汙染源黏附，並且所述第二無塵腔體包含一第二滾輪固定裝置，其用來夾持並轉動所述金屬滾輪；一固化裝置，設置於所述第二無塵腔體中，並且所述固化裝置用來將一圖案化光源照射於所述光阻層，以使所述光阻層的一側形成多個曝光圖案；一顯影設備，設置於所述第二無塵腔體中，並且所述顯影設備用來移除所述光阻層上的多個所述曝光圖案的材料，並形成一圖案化光阻層；及一蝕刻設備，設置於所述第二無塵腔體中，並且所述蝕刻設備用來以非等向性蝕刻方式對所述圖案化光阻層進行蝕刻以形成所述壓印層。This creative embodiment discloses a photolithography system for forming an imprint layer on the outer surface of a metal roller. The photolithography system includes: a first dust-free cavity to prevent the metal roller from being exposed to the environment. The pollution source in the first dust-free cavity is attached, and the first dust-free cavity includes a first roller fixing device for holding and rotating the metal roller; a photoresist coating device is arranged in the first dust-free cavity Body, and the photoresist coating device is used to coat a photoresist layer on the outer surface of the metal roller; a second dust-free cavity is used to prevent the metal roller from being affected by the environment The pollution source is adhered, and the second dust-free cavity includes a second roller fixing device for clamping and rotating the metal roller; a curing device is arranged in the second dust-free cavity, and The curing device is used to irradiate a patterned light source on the photoresist layer to form a plurality of exposure patterns on one side of the photoresist layer; a developing device is arranged in the second dust-free cavity, And the developing device is used to remove a plurality of materials of the exposure patterns on the photoresist layer and form a patterned photoresist layer; and an etching device is arranged in the second dust-free cavity And the etching equipment is used to etch the patterned photoresist layer in an anisotropic etching manner to form the imprint layer.

本創作的其中一有益效果在於，本創作所提供的所述光刻系統，其能通過“所述第一無塵腔體以及所述第二無塵腔體用來避免所述金屬滾輪被環境中的汙染源黏附”以及“所述光阻塗佈裝置設置於所述第一無塵腔體中，並且所述固化裝置、所述顯影設備、以及所述蝕刻設備設置於所述第二無塵腔體中”的技術方案，以避免所述金屬滾輪被環境中的汙染源汙染，並使所述金屬滾輪的製造良率大幅提升。One of the beneficial effects of this creation is that the lithography system provided by this creation can use "the first dust-free cavity and the second dust-free cavity to prevent the metal roller from being affected by the environment. "Pollution source adhesion" and "The photoresist coating device is arranged in the first dust-free cavity, and the curing device, the developing equipment, and the etching equipment are arranged in the second dust-free cavity The technical solution of "in the cavity" prevents the metal roller from being polluted by environmental pollution sources, and greatly improves the manufacturing yield of the metal roller.

為使能更進一步瞭解本創作的特徵及技術內容，請參閱以下有關本創作的詳細說明與圖式，然而所提供的圖式僅用於提供參考與說明，並非用來對本創作加以限制。In order to further understand the features and technical content of this creation, please refer to the following detailed descriptions and drawings about this creation. However, the drawings provided are only for reference and explanation, and are not used to limit this creation.

以下是通過特定的具體實施例來說明本創作所公開有關“光刻系統”的實施方式，本領域技術人員可由本說明書所公開的內容瞭解本創作的優點與效果。本創作可通過其他不同的具體實施例加以施行或應用，本說明書中的各項細節也可基於不同觀點與應用，在不背離本創作的構思下進行各種修改與變更。另外，本創作的附圖僅為簡單示意說明，並非依實際尺寸的描繪，事先聲明。此外，以下如有指出請參閱特定圖式或是如特定圖式所示，其僅是用以強調於後續說明中，所述及的相關內容大部份出現於該特定圖式中，但不限制該後續說明中僅可參考所述特定圖式。以下的實施方式將進一步詳細說明本創作的相關技術內容，但所公開的內容並非用以限制本創作的保護範圍。The following is a specific embodiment to illustrate the implementation of the "lithography system" disclosed in this creation, and those skilled in the art can understand the advantages and effects of this creation from the content disclosed in this specification. This creation can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of this creation. In addition, the drawings of this creation are merely schematic illustrations, and are not depicted in actual size, and are stated in advance. In addition, if it is pointed out below, please refer to a specific drawing or as shown in a specific drawing, it is only used to emphasize in the subsequent description, and most of the related content appears in the specific drawing, but not It is restricted that only the specific drawings can be referred to in this subsequent description. The following implementations will further describe the related technical content of this creation in detail, but the disclosed content is not intended to limit the protection scope of this creation.

應當可以理解的是，雖然本文中可能會使用到“第一”、“第二”、“第三”等術語來描述各種元件或者信號，但這些元件或者信號不應受這些術語的限制。這些術語主要是用以區分一元件與另一元件，或者一信號與另一信號。另外，本文中所使用的術語“或”，應視實際情況可能包括相關聯的列出項目中的任一個或者多個的組合。It should be understood that although terms such as "first", "second", and "third" may be used herein to describe various elements or signals, these elements or signals should not be limited by these terms. These terms are mainly used to distinguish one element from another, or one signal from another signal. In addition, the term "or" used in this document may include any one or a combination of more of the associated listed items depending on the actual situation.

[第一實施例][First Embodiment]

請參閱圖1至圖9A所示，其為本創作的第一實施例，需先說明的是，本實施例所對應到的附圖及其所提及的相關數量與外形，僅用來具體地說明本創作的實施方式，以便於了解本創作的內容，而非用來侷限本創作的保護範圍。Please refer to Figures 1 to 9A, which are the first embodiment of the creation. It should be noted that the drawings corresponding to this embodiment and the related numbers and appearances mentioned in this embodiment are only used for specific details. Explain the implementation of this creation in order to understand the content of this creation, not to limit the scope of protection of this creation.

如圖1至圖9A所示，本創作第一實施例提供一種光刻系統100，用來在一金屬滾輪200的外表面201上形成一壓印層300’’。需要說明的是，所述金屬滾輪200定義有一中心軸線C，並且於本實施例中，所述金屬滾輪200的長度為1公尺（M）～2公尺，而所述金屬滾輪200的橫截面的直徑為10公分（cm）～45公分。其中，所述金屬滾輪200較佳由不銹鋼製成，但本創作並不限於此。舉例來說，所述金屬滾輪200也可以由錫、鉛、鋅、鋁、銅、黃銅、鐵、鎳、鈷、鎢、鉻或其硬度大於鉻的金屬製成，而所述金屬滾輪200的長度與橫截面也能以依需求進行設計。As shown in FIGS. 1-9A, the first embodiment of the present invention provides a lithography system 100 for forming an imprint layer 300'' on the outer surface 201 of a metal roller 200. It should be noted that the metal roller 200 defines a central axis C, and in this embodiment, the length of the metal roller 200 is 1 meter (M) to 2 meters, and the horizontal of the metal roller 200 The diameter of the cross-section is 10 centimeters (cm) to 45 centimeters. Wherein, the metal roller 200 is preferably made of stainless steel, but the invention is not limited to this. For example, the metal roller 200 can also be made of tin, lead, zinc, aluminum, copper, brass, iron, nickel, cobalt, tungsten, chromium or a metal having a hardness greater than that of chromium, and the metal roller 200 The length and cross-section can also be designed according to requirements.

如圖1所示，所述光刻系統100包括一第一無塵腔體1、設置於所述第一無塵腔體1中的一光阻塗佈裝置2、一第二無塵腔體3、設置於所述第二無塵腔體3中的一固化裝置4、設置於所述第二無塵腔體3中的一顯影設備5、設置於所述第二無塵腔體3中的一蝕刻設備6、以及一推車7，但本創作並不限於此。舉例來說，於本創作未繪示的其他實施例中，所述光刻系統100也可以不包含所述推車7。As shown in FIG. 1, the photolithography system 100 includes a first dust-free cavity 1, a photoresist coating device 2 arranged in the first dust-free cavity 1, and a second dust-free cavity 3. A curing device 4 arranged in the second dust-free cavity 3, a developing device 5 arranged in the second dust-free cavity 3, and a developing device 5 arranged in the second dust-free cavity 3 An etching device 6 and a cart 7, but this creation is not limited to this. For example, in other embodiments not shown in this creation, the lithography system 100 may not include the cart 7.

需要說明的是，所述推車7用來將所述金屬滾輪200自所述第一無塵腔體1移入所述第二無塵腔體3中。更詳細地說，於本實施例中，所述推車7包含一推車本體71以及一防塵套件72，所述推車本體71用來可移動地設置在一地面上，並且所述推車本體71包含一承載支架711，其用來支撐所述金屬滾輪200。其中，所述防塵套件72安裝於所述承載支架711上，並且所述防塵套件72定義出具有預定潔淨等級（如：美國聯邦標準分級1～美國聯邦標準分級100）的一防塵空間721，所述防塵空間721能用來容置所述金屬滾輪200，使所述推車本體71能夠用來使所述金屬滾輪200在預定潔淨等級的環境下進行輸送。It should be noted that the cart 7 is used to move the metal roller 200 from the first dust-free cavity 1 into the second dust-free cavity 3. In more detail, in this embodiment, the cart 7 includes a cart body 71 and a dustproof kit 72. The cart body 71 is used to be movably set on a ground, and the cart The main body 71 includes a supporting bracket 711 for supporting the metal roller 200. Wherein, the dust-proof kit 72 is installed on the carrying bracket 711, and the dust-proof kit 72 defines a dust-proof space 721 with a predetermined cleanliness level (eg, US Federal Standard Classification 1 to US Federal Standard Classification 100). The dust-proof space 721 can be used to accommodate the metal roller 200, so that the cart body 71 can be used to transport the metal roller 200 in an environment with a predetermined cleanliness level.

需要說明的是，所述第一無塵腔體1以及所述第二無塵腔體3用來避免所述金屬滾輪200被環境中的汙染源黏附，並且所述第一無塵腔體1以及所述第二無塵腔體3分別包含一第一滾輪固定裝置11以及一第二滾輪固定裝置31。其中，所述第一無塵腔體1以及所述第二無塵腔體3的等級為美國聯邦標準分級1～美國聯邦標準分級100，並且所述第一滾輪固定裝置11以及所述第二滾輪固定裝置31分別能用來夾持並轉動所述金屬滾輪200。It should be noted that the first dust-free cavity 1 and the second dust-free cavity 3 are used to prevent the metal roller 200 from being adhered to pollution sources in the environment, and the first dust-free cavity 1 and The second dust-free cavity 3 includes a first roller fixing device 11 and a second roller fixing device 31 respectively. Wherein, the grades of the first dust-free cavity 1 and the second dust-free cavity 3 are from U.S. Federal Standard Classification 1 to U.S. Federal Standard Classification 100, and the first roller fixing device 11 and the second The roller fixing device 31 can be used to clamp and rotate the metal roller 200 respectively.

需要說明的是，為方便說明與理解所述第二滾輪固定裝置31的技術內容，以下將先介紹其他裝置（如：所述光阻塗佈裝置2），而後在介紹所述顯影設備5時一併介紹所述第二滾輪固定裝置31的細部技術內容。It should be noted that, in order to facilitate the description and understanding of the technical content of the second roller fixing device 31, other devices (such as the photoresist coating device 2) will be introduced first, and then when the developing device 5 is introduced The detailed technical content of the second roller fixing device 31 is also introduced.

如圖2所示，所述光阻塗佈裝置2用來在所述金屬滾輪200的所述外表面201上塗佈一光阻層300。其中，所述光阻塗佈裝置2是一噴塗塗佈裝置，但本創作並不以此為限。舉例來說，所述光阻塗佈裝置2也可以是線棒式塗佈裝置、雙面成形塗佈裝置、以及封閉式刮刀塗佈裝置等多種應用不同塗佈技術的塗佈裝置。As shown in FIG. 2, the photoresist coating device 2 is used to coat a photoresist layer 300 on the outer surface 201 of the metal roller 200. Wherein, the photoresist coating device 2 is a spray coating device, but this creation is not limited to this. For example, the photoresist coating device 2 may also be a wire bar coating device, a double-sided forming coating device, and a closed blade coating device, and other coating devices using different coating technologies.

需要說明的是，所述光阻層300於本實施例中由一正光阻劑製成，其主要是由酚醛樹脂（Phenol-formaldehyde resin）製成，但本創作並不限於此。舉例來說，所述光阻層300也可以由或環氧樹脂（Epoxy resin）等正光阻劑材料製成。It should be noted that the photoresist layer 300 is made of a positive photoresist in this embodiment, which is mainly made of phenol-formaldehyde resin, but the invention is not limited to this. For example, the photoresist layer 300 can also be made of positive photoresist materials such as epoxy resin or the like.

具體來說，當所述光阻塗佈裝置2在所述金屬滾輪200的所述外表面201上噴塗所述正光阻劑時，所述金屬滾輪200被所述第一滾輪固定裝置11夾持並轉動，以使所述外表面201被所述正光阻劑均勻地噴塗，續而形成設置於所述外表面201的所述光阻層300。其中，於本實施例中，所述光阻塗佈裝置2包含位置臨近於所述金屬滾輪200的一噴頭，用來可移動地將所述正光阻劑噴塗於所述外表面201，但本創作並不限於此。舉例來說，於本創作未繪示的其他實施例中，所述光阻塗佈裝置2也可以包含多個噴頭。Specifically, when the photoresist coating device 2 sprays the positive photoresist on the outer surface 201 of the metal roller 200, the metal roller 200 is clamped by the first roller fixing device 11 And rotating, so that the outer surface 201 is evenly sprayed by the positive photoresist, and then the photoresist layer 300 disposed on the outer surface 201 is formed. Wherein, in this embodiment, the photoresist coating device 2 includes a spray head located close to the metal roller 200 for movably spraying the positive photoresist on the outer surface 201, but this The creation is not limited to this. For example, in other embodiments not shown in the present invention, the photoresist coating device 2 may also include multiple nozzles.

如圖3A及圖3B所示，所述固化裝置4用來將一圖案化光源4L照射於所述光阻層300，以使所述光阻層300的一側形成多個曝光圖案301。進一步地說，於本實施例中，所述固化裝置4包含一光源（如：LED或雷射二極體）以及一光罩，所述光源產生的光線能穿透所述光罩而形成所述圖案化光源4L，但本創作並不以此為限。舉例來說，所述圖案化光源4L也能夠是由雷射光源或紫外光LED通過微菱鏡聚焦所形成。As shown in FIGS. 3A and 3B, the curing device 4 is used to irradiate a patterned light source 4L on the photoresist layer 300, so that a plurality of exposure patterns 301 are formed on one side of the photoresist layer 300. Furthermore, in this embodiment, the curing device 4 includes a light source (such as an LED or a laser diode) and a light cover, and the light generated by the light source can penetrate the light cover to form the The patterned light source 4L is described, but this creation is not limited to this. For example, the patterned light source 4L can also be formed by focusing by a laser light source or an ultraviolet LED through a micro diamond lens.

具體來說，當所述固化裝置4以所述圖案化光源4L照射於所述光阻層300的一側時，所述金屬滾輪200被所述第二滾輪固定裝置31夾持並轉動，使所述光阻層300被所述圖案化光源4L均勻地照射，續而於所述光阻層300的一側形成多個所述曝光圖案301。Specifically, when the curing device 4 irradiates one side of the photoresist layer 300 with the patterned light source 4L, the metal roller 200 is clamped and rotated by the second roller fixing device 31, so that The photoresist layer 300 is uniformly illuminated by the patterned light source 4L, and then a plurality of the exposure patterns 301 are formed on one side of the photoresist layer 300.

如圖4所示，所述浸潤裝置51用來容納一顯影劑R，並且所述浸潤裝置51包含一蓋體511，所述蓋體511用來保護設置於所述浸潤裝置51的所述顯影劑R，避免其受到外部環境的汙染。更詳細地說，所述蓋體511包含可相互組合的兩個組合面，兩個所述組合面分別設置於所述浸潤裝置51的位置對稱的任兩側，兩個所述組合面可移動地組合在一起，使所述浸潤裝置51用來供所述金屬滾輪200進入的開口被封閉或開啟，但本創作並不限於此。舉例來說。於本創作未繪示的其他實施例中，所述蓋體511也可以包含一捲簾，所述捲簾設置於所述浸潤裝置51的任意一側，並且所述捲簾可以被鋪展以使所述浸潤裝置51用來供所述金屬滾輪200進入的開口被封閉或開啟。As shown in FIG. 4, the infiltration device 51 is used to contain a developer R, and the infiltration device 51 includes a cover 511, and the cover 511 is used to protect the developer provided in the infiltration device 51. Agent R to prevent it from being polluted by the external environment. In more detail, the cover 511 includes two combined surfaces that can be combined with each other, and the two combined surfaces are respectively disposed on any two sides of the infiltration device 51 that are symmetrical in position, and the two combined surfaces are movable The openings of the infiltration device 51 for the metal roller 200 to enter are closed or opened, but the creation is not limited to this. for example. In other embodiments not shown in this creation, the cover 511 may also include a roller blind, the roller blind is arranged on either side of the infiltration device 51, and the roller blind can be spread to make The opening of the infiltration device 51 for the metal roller 200 to enter is closed or opened.

需要說明的是，所述顯影劑R的組成材料的種類與組成材料比例對應於所述光阻層300的組成材料的種類與組成材料比例。換句話說，所述顯影劑R包含的組成材料種類與組成材料比例會隨所述光阻層300的組成材料的種類與比例變動。所述顯影劑R於本實施例中包含溶解有四甲基氫氧化銨(TMAH)的鹼水溶液，但本創作並不限於此。舉例來說，於其他實施例中，溶解有四甲基氫氧化銨(TMAH)的所述鹼水溶液，也可以被替換成溶解有四乙基氫氧化銨(TEAH)、四丙基氫氧化銨(TPAH)、或四丁基氫氧化銨(TBAH)的鹼水溶液。It should be noted that the type and the ratio of the composition material of the developer R correspond to the type and the ratio of the composition material of the photoresist layer 300. In other words, the types and ratios of the constituent materials contained in the developer R will vary with the types and ratios of the constituent materials of the photoresist layer 300. The developer R includes an aqueous alkali solution in which tetramethylammonium hydroxide (TMAH) is dissolved in this embodiment, but the invention is not limited to this. For example, in other embodiments, the alkaline aqueous solution in which tetramethylammonium hydroxide (TMAH) is dissolved can also be replaced with tetraethylammonium hydroxide (TEAH) or tetrapropylammonium hydroxide. (TPAH), or tetrabutylammonium hydroxide (TBAH) alkaline aqueous solution.

如圖5A及圖5B所示，所述顯影設備5用來移除所述光阻層300上的多個所述曝光圖案301的材料，並形成一圖案化光阻層300’。更詳細地說，所述顯影設備5包含與所述金屬滾輪200間隔地設置的一浸潤裝置51、連接於所述浸潤裝置51的一移動裝置52、安裝於所述第二滾輪固定裝置31的一速度控制機構53、以及與所述金屬滾輪200間隔地設置的一沖洗裝置54。As shown in FIGS. 5A and 5B, the developing device 5 is used to remove the material of the plurality of exposure patterns 301 on the photoresist layer 300, and form a patterned photoresist layer 300'. In more detail, the developing device 5 includes an infiltration device 51 that is spaced apart from the metal roller 200, a moving device 52 connected to the infiltration device 51, and a second roller fixing device 31. A speed control mechanism 53 and a washing device 54 arranged at intervals from the metal roller 200.

如圖5A所示，所述移動裝置52用來使所述第二滾輪固定裝置31與所述浸潤裝置51相對地移動，以使所述浸潤裝置51能用來將其所容納的所述顯影劑R浸潤於局部所述光阻層300。更詳細地說，於本實施例中，所述移動裝置52用來移動所述浸潤裝置51並使所述浸潤裝置51向所述第二滾輪固定裝置31相對地移動，但本創作並不限於此。舉例來說，於本創作未繪示的其他實施例中，所述移動裝置52也可以是用來移動所述第二滾輪固定裝置31並使所述第二滾輪固定裝置31向所述浸潤裝置51相對地移動。As shown in FIG. 5A, the moving device 52 is used to move the second roller fixing device 31 and the infiltration device 51 relative to each other, so that the infiltration device 51 can be used to hold the developing device. The agent R infiltrates a part of the photoresist layer 300. In more detail, in this embodiment, the moving device 52 is used to move the infiltration device 51 and relatively move the infiltration device 51 to the second roller fixing device 31, but this creation is not limited to this. For example, in other embodiments not shown in this creation, the moving device 52 may also be used to move the second roller fixing device 31 and make the second roller fixing device 31 move toward the infiltration device 51 moves relatively.

所述移動裝置52包含一升降機構521以及安裝於所述升降機構521的一支撐機構522。其中，所述支撐機構522用來支撐所述浸潤裝置51的底部，而所述升降機構521用來使所述浸潤裝置51沿垂直所述金屬滾輪200的所述中心軸線C的一方向移動。The moving device 52 includes a lifting mechanism 521 and a supporting mechanism 522 installed on the lifting mechanism 521. The supporting mechanism 522 is used to support the bottom of the infiltration device 51, and the lifting mechanism 521 is used to move the infiltration device 51 in a direction perpendicular to the central axis C of the metal roller 200.

如圖5A至圖6所示，所述速度控制機構53用來使所述第二滾輪固定裝置31選擇性地以一浸潤速度S1以及一甩乾速度S2轉動所述金屬滾輪200。更詳細地說，所述速度控制機構53能用來控制所述第二滾輪固定裝置31，以使所述金屬滾輪200以介於1轉/分鐘（RPM）至120轉/分鐘的所述浸潤速度S1轉動，並且所述速度控制機構53也能用來控制所述第二滾輪固定裝置31，以使所述金屬滾輪200以介於2900轉/分鐘（RPM）至4500轉/分鐘的所述甩乾速度S2轉動。As shown in FIGS. 5A to 6, the speed control mechanism 53 is used to enable the second roller fixing device 31 to selectively rotate the metal roller 200 at a soaking speed S1 and a spinning speed S2. In more detail, the speed control mechanism 53 can be used to control the second roller fixing device 31 so that the metal roller 200 can be wetted at a rate ranging from 1 revolution per minute (RPM) to 120 revolutions per minute. The speed S1 rotates, and the speed control mechanism 53 can also be used to control the second roller fixing device 31, so that the metal roller 200 rotates at a speed ranging from 2900 revolutions per minute (RPM) to 4500 revolutions per minute. Spinning speed S2 rotates.

需要說明的是，如圖5A所示，所述速度控制機構53能用來在所述光阻層300被所述浸潤裝置51中的所述顯影劑R浸潤時，使所述第二滾輪固定裝置31以所述浸潤速度S1轉動所述金屬滾輪200而令所述光阻層300被所述顯影劑R均勻浸潤，使部分所述光阻層300溶於所述顯影劑R中，進而形成所述圖案化光阻層300’。It should be noted that, as shown in FIG. 5A, the speed control mechanism 53 can be used to fix the second roller when the photoresist layer 300 is infiltrated by the developer R in the infiltration device 51 The device 31 rotates the metal roller 200 at the wetting speed S1 so that the photoresist layer 300 is evenly infiltrated by the developer R, so that part of the photoresist layer 300 is dissolved in the developer R to form The patterned photoresist layer 300'.

如圖6所示，所述沖洗裝置54用來在所述圖案化光阻層300’離開所述浸潤裝置51內的所述顯影劑R時，以水沖洗分布於所述圖案化光阻層300’的所述顯影劑R。其中，當所述沖洗裝置54以水沖洗分布於所述圖案化光阻層300’的所述顯影劑R時，所述速度控制機構53控制所述第二滾輪固定裝置31，以使所述金屬滾輪200以所述浸潤速度S1轉動。As shown in FIG. 6, the rinsing device 54 is used to rinse the patterned photoresist layer with water when the patterned photoresist layer 300' leaves the developer R in the infiltration device 51 300' of the developer R. Wherein, when the washing device 54 washes the developer R distributed on the patterned photoresist layer 300' with water, the speed control mechanism 53 controls the second roller fixing device 31 so that the The metal roller 200 rotates at the wetting speed S1.

需要說明的是，當所述沖洗裝置54以水沖洗分布於所述圖案化光阻層300’的所述顯影劑R時，所述浸潤裝置51的所述蓋體511將封閉所述浸潤裝置51，阻擋使用過的水與使用過的所述顯影劑R回流到所述浸潤裝置51中。It should be noted that when the washing device 54 washes the developer R distributed on the patterned photoresist layer 300' with water, the cover 511 of the infiltration device 51 will close the infiltration device 51. Block the used water and the used developer R from flowing back into the infiltration device 51.

需要說明的是，如圖7所示，當所述圖案化光阻層300’離開所述浸潤裝置51內的所述顯影劑R，而且所述沖洗裝置54對所述圖案化光阻層300’沖洗完畢後，所述速度控制機構53能控制所述第二滾輪固定裝置31，以使所述金屬滾輪200以所述甩乾速度S2轉動，並使殘留於所述圖案化光阻層300’的水分離。It should be noted that, as shown in FIG. 7, when the patterned photoresist layer 300' leaves the developer R in the infiltration device 51, and the washing device 54 treats the patterned photoresist layer 300 After rinsing, the speed control mechanism 53 can control the second roller fixing device 31, so that the metal roller 200 rotates at the spinning speed S2, and leaves the patterned photoresist layer 300 'The water is separated.

如圖8至圖9A所示，所述蝕刻設備6用來以非等向性蝕刻方式（如：電漿蝕刻）對所述圖案化光阻層300’進行蝕刻以形成所述壓印層300’’。更詳細地說，如圖9A所示，所述蝕刻設備6包含一第一蝕刻機構61以及第二蝕刻機構62，並且所述第一蝕刻機構61能用來對所述圖案化光阻層300’進行蝕刻以形成所述壓印層300’’。其中，所述壓印層300’’包含多個鏤空部301’’和多個遮蔽部302’’，多個所述鏤空部301’’用來暴露部分所述外表面201，而多個所述遮蔽部302’’遮蔽部分所述外表面201。As shown in FIGS. 8 to 9A, the etching device 6 is used to etch the patterned photoresist layer 300' in an anisotropic etching manner (such as plasma etching) to form the imprint layer 300 ''. In more detail, as shown in FIG. 9A, the etching device 6 includes a first etching mechanism 61 and a second etching mechanism 62, and the first etching mechanism 61 can be used to perform the etching on the patterned photoresist layer 300 'Etching is performed to form the embossed layer 300". Wherein, the embossed layer 300" includes a plurality of hollow portions 301" and a plurality of shielding portions 302", the plurality of hollow portions 301" are used to expose a part of the outer surface 201, and the plurality of hollow portions 301" The shielding portion 302" shields part of the outer surface 201.

需要說明的是，由於非等向性蝕刻方式具有蝕刻方向可控制的特點，使得所述圖案化光阻層300’能夠以大致上沿著和所述金屬滾輪200的所述外表面201的法線方向被蝕刻，因此能夠確保所述壓印層300’’的多個所述鏤空部301’’和多個所述遮蔽部302’’的形狀的正確性，並且減少了所述壓印層300’’產生缺陷的機會。It should be noted that because the anisotropic etching method has the characteristic of controllable etching direction, the patterned photoresist layer 300' can be substantially along the outer surface 201 of the metal roller 200. The line direction is etched, so the correctness of the shapes of the plurality of hollow portions 301" and the plurality of shielding portions 302" of the imprint layer 300" can be ensured, and the imprint layer can be reduced 300'' the opportunity to produce defects.

[第二實施例][Second Embodiment]

參閱圖9B及9C所示，其為本創作的第二實施例，需先說明的是，本實施例類似於上述第一實施例，所以兩個實施例的相同處則不再加以贅述；再者，本實施例對應附圖所提及的相關數量與外型，僅用來具體地說明本創作的實施方式，以便於了解本創作的內容，而非用來侷限本創作的保護範圍。Refer to Figures 9B and 9C, which are the second embodiment of the creation. It should be noted that this embodiment is similar to the above-mentioned first embodiment, so the similarities between the two embodiments will not be described again; In addition, the relevant quantities and appearances mentioned in the corresponding drawings in this embodiment are only used to specifically illustrate the implementation of this creation, so as to understand the content of this creation, and not to limit the protection scope of this creation.

如圖9B所示，所述第二蝕刻機構62能以所述壓印層300’’為遮罩，並透過非等向蝕刻手段蝕刻所述金屬滾輪200的所述外表面201，而於所述外表面201形成多個壓印圖形303’’。其中，如圖9C所示，所述第二蝕刻機構62能用來使任一個所述壓印圖形303’’的深度d介於0.2微米至0.6微米之間，使任一個所述壓印圖形303’’的寬度w介於0.3微米至0.8微米之間，並使相鄰的任兩個所述壓印圖形303’’的間距p介於0.6微米至1.6微米之間。As shown in FIG. 9B, the second etching mechanism 62 can use the imprint layer 300" as a mask, and etch the outer surface 201 of the metal roller 200 through an anisotropic etching method, and The outer surface 201 forms a plurality of embossed patterns 303". Wherein, as shown in FIG. 9C, the second etching mechanism 62 can be used to make the depth d of any one of the embossed patterns 303" be between 0.2 microns and 0.6 microns, so that any one of the embossed patterns The width w of 303" is between 0.3 μm and 0.8 μm, and the pitch p between any two adjacent embossed patterns 303" is between 0.6 μm and 1.6 μm.

需要說明的是，於本實施例中，所述第二蝕刻機構62是使用高密度電漿源 （High density plasma， HDP）並以反應式離子蝕刻手段（Reactive Ion Etch， RIE）進行蝕刻，但本創作並不限於此。舉例來說，所述第二蝕刻機構62也能夠採用磁場強化活性離子蝕刻手段（Magnetic Enhanced RIE， MERIE），或者透過脈衝電場強化的技術手段，增強蝕刻的效率並控制蝕刻的方向。It should be noted that, in this embodiment, the second etching mechanism 62 uses high density plasma (HDP) and reactive ion etching (RIE) for etching, but This creation is not limited to this. For example, the second etching mechanism 62 can also use Magnetic Enhanced RIE (MERIE) or pulsed electric field enhancement to enhance the etching efficiency and control the etching direction.

需要說明的是，當所述外表面201形成有多個所述壓印圖形303’’後，所述金屬滾輪200的所述外表面201上的所述壓印層300’’被移除，而使得所述金屬滾輪200形成一轉印滾輪。It should be noted that, after a plurality of embossed patterns 303" are formed on the outer surface 201, the embossed layer 300" on the outer surface 201 of the metal roller 200 is removed, The metal roller 200 forms a transfer roller.

[實施例的有益效果][Beneficial effects of the embodiment]

本創作的其中一有益效果在於，本創作所提供的所述光刻系統100，其能通過“所述第一無塵腔體1以及所述第二無塵腔體3用來避免所述金屬滾輪200被環境中的汙染源黏附”以及“所述光阻塗佈裝置2設置於所述第一無塵腔體1中，並且所述固化裝置4、所述顯影設備5、以及所述蝕刻設備6設置於所述第二無塵腔體3中”的技術方案，以避免所述金屬滾輪200被環境中的汙染源汙染，並使所述金屬滾輪200的製造良率大幅提升。One of the beneficial effects of this creation is that the lithography system 100 provided by this creation can use "the first dust-free cavity 1 and the second dust-free cavity 3 to avoid the metal The roller 200 is adhered to the pollution source in the environment" and "The photoresist coating device 2 is arranged in the first dust-free cavity 1, and the curing device 4, the developing device 5, and the etching device 6 is arranged in the second dust-free cavity 3" to prevent the metal roller 200 from being polluted by environmental pollution sources, and greatly improve the manufacturing yield of the metal roller 200.

更進一步來說，本創作所提供的所述光刻系統100能通過“所述速度控制機構53能用來在所述光阻層300被所述浸潤裝置51中的所述顯影劑R浸潤時，使所述第二滾輪固定裝置31以所述浸潤速度S1轉動所述金屬滾輪200”的技術方案，使受到曝光的部分所述光阻層300能充分與所述顯影劑R反應，進而被所述顯影劑R完全溶解。Furthermore, the photolithography system 100 provided by the present creation can be used when the photoresist layer 300 is infiltrated by the developer R in the infiltration device 51 through the "speed control mechanism 53". , The technical solution of making the second roller fixing device 31 rotate the metal roller 200" at the wetting speed S1, so that the exposed part of the photoresist layer 300 can fully react with the developer R, and then be The developer R is completely dissolved.

更進一步來說，本創作所提供的所述光刻系統100能通過“所述速度控制機構53能控制所述第二滾輪固定裝置31，以使所述金屬滾輪200以所述甩乾速度S2轉動，並使殘留於所述圖案化光阻層300’的水分離”的技術方案，使所述圖案化光阻層300’上沒有殘留所述顯影劑R以及水，進而避免所述圖案化光阻層300’於後續的其他製程中發生氧化或其他化學反應，續而使所述金屬滾輪200的製造良率上升。Furthermore, the lithography system 100 provided by the present creation can control the second roller fixing device 31 through the "speed control mechanism 53", so that the metal roller 200 can operate at the spinning speed S2 Rotate and separate the water remaining on the patterned photoresist layer 300', so that the developer R and water are not left on the patterned photoresist layer 300', thereby avoiding the patterning The photoresist layer 300 ′ undergoes oxidation or other chemical reactions in other subsequent manufacturing processes, which continues to increase the manufacturing yield of the metal roller 200.

更進一步來說，本創作所提供的所述光刻系統100能通過“所述防塵套件72安裝於所述承載支架711，並且所述防塵套件72定義出具有預定潔淨等級的一防塵空間721，所述防塵空間721能用來容置所述金屬滾輪200，使所述推車本體71能夠用來使所述金屬滾輪200在預定潔淨等級的環境下進行輸送”的技術方案，使所述金屬滾輪200在工作機台之間移動時，不會受到灰塵、微粒或其他的汙染物影響。Furthermore, the lithography system 100 provided by the present creation can be installed on the supporting bracket 711 through the dust-proof kit 72, and the dust-proof kit 72 defines a dust-proof space 721 with a predetermined cleanliness level. The dust-proof space 721 can be used to accommodate the metal roller 200, so that the cart body 71 can be used to transport the metal roller 200 in an environment with a predetermined cleanliness level. When the roller 200 moves between the work stations, it will not be affected by dust, particles or other contaminants.

更進一步來說，本創作所提供的所述光刻系統100能通過“所述蝕刻設備6用來以非等向性蝕刻方式對所述圖案化光阻層300’進行蝕刻以形成所述壓印層300’’”的技術方案，減少了所述壓印層300’’產生缺陷的機會。More specifically, the photolithography system 100 provided by the present creation can be used to etch the patterned photoresist layer 300' in an anisotropic etching manner through the "etching device 6" to form the patterned photoresist layer 300'. The technical solution of the printing layer 300"" reduces the chance of defects in the printing layer 300".

以上所公開的內容僅為本創作的優選可行實施例，並非因此侷限本創作的申請專利範圍，所以凡是運用本創作說明書及圖式內容所做的等效技術變化，均包含於本創作的申請專利範圍內。The content disclosed above is only a preferred and feasible embodiment of this creation, and does not limit the scope of patent application for this creation. Therefore, all equivalent technical changes made using this creation specification and schematic content are included in the application for this creation. Within the scope of the patent.

100:光刻系統 1:第一無塵腔體 11:第一滾輪固定裝置 2:光阻塗佈裝置 3:第二無塵腔體 31:第二滾輪固定裝置 S1:浸潤速度 S2:甩乾速度 4:固化裝置 4L:圖案化光源 5:顯影設備 51:浸潤裝置 511:蓋體 52:移動裝置 521:升降機構 522:支撐機構 53:速度控制機構 54:沖洗裝置 6:蝕刻設備 61:第一蝕刻機構 62:第二蝕刻機構 7:推車 71:推車本體 711:承載支架 72:防塵套件 721:防塵空間 200:金屬滾輪 201:外表面 300:光阻層 301:曝光圖案 300’:圖案化光阻層 300’’:壓印層 301’’:鏤空部 302’’:遮蔽部 303’’:壓印圖形 d:深度 w:寬度 p:間距 R:顯影劑 C:中心軸線 100: Lithography system 1: The first clean chamber 11: The first roller fixing device 2: Photoresist coating device 3: The second clean chamber 31: The second roller fixing device S1: Wetting speed S2: Spinning speed 4: curing device 4L: Patterned light source 5: Development equipment 51: Infiltration device 511: Lid 52: mobile device 521: Lifting Mechanism 522: support mechanism 53: Speed control mechanism 54: flushing device 6: Etching equipment 61: The first etching mechanism 62: The second etching mechanism 7: cart 71: Cart body 711: Carrying bracket 72: Dustproof kit 721: Dustproof Space 200: Metal roller 201: Outer surface 300: photoresist layer 301: Exposure pattern 300’: Patterned photoresist layer 300’’: Embossing layer 301’’: Hollowed part 302’’: Covering part 303’’: Embossed graphics d: depth w: width p: spacing R: Developer C: central axis

圖1為本創作第一實施例的光刻系統的示意圖。FIG. 1 is a schematic diagram of the lithography system of the first embodiment of the creation.

圖2為本創作第一實施例的光阻塗佈裝置的示意圖。Fig. 2 is a schematic diagram of the photoresist coating device according to the first embodiment of the creation.

圖3A為本創作第一實施例的固化裝置照射金屬滾輪的動態示意圖。Fig. 3A is a dynamic schematic diagram of the curing device irradiating the metal roller according to the first embodiment of the creation.

圖3B為本創作第一實施例的固化裝置照射光阻層的示意圖。3B is a schematic diagram of the curing device irradiating the photoresist layer according to the first embodiment of the creation.

圖4為本創作第一實施例的顯影設備的動態示意圖（一）。Figure 4 is a dynamic schematic diagram (1) of the developing device of the first embodiment of the creation.

圖5A為本創作第一實施例的顯影設備的動態示意圖（二）。Figure 5A is a dynamic schematic diagram (2) of the developing device of the first embodiment of the creation.

圖5B本創作第一實施例的顯影設備移除曝光圖案的示意圖。Fig. 5B is a schematic diagram of the developing device of the first embodiment of the present invention removing the exposure pattern.

圖6為本創作第一實施例的顯影設備的動態示意圖（三）。Figure 6 is a dynamic schematic diagram (3) of the developing device of the first embodiment of the creation.

圖7為本創作第一實施例的顯影設備的動態示意圖（四）。Figure 7 is a dynamic schematic diagram (4) of the developing device of the first embodiment of the creation.

圖8為本創作第一實施例的蝕刻設備蝕刻圖案化光阻層的動態示意圖。FIG. 8 is a dynamic schematic diagram of the etching device etching the patterned photoresist layer according to the first embodiment of the creation.

圖9A為本創作第一實施例的蝕刻設備形成壓印層的動作示意圖。FIG. 9A is a schematic diagram of the formation of an imprinted layer by the etching device according to the first embodiment of the creation.

圖9B為本創作第二實施例的蝕刻設備於金屬滾輪表面形成壓印圖形的動作示意圖。FIG. 9B is a schematic diagram of the action of the etching device in the creation of the second embodiment of forming an imprint pattern on the surface of the metal roller.

圖9C為本創作第二實施例移除壓印層後的金屬滾輪的局部剖面示意圖。FIG. 9C is a partial cross-sectional schematic diagram of the metal roller after the imprinting layer is removed in the second embodiment of the creation.

100:光刻系統 100: Lithography system

1:第一無塵腔體 1: The first clean chamber

11:第一滾輪固定裝置 11: The first roller fixing device

2:光阻塗佈裝置 2: Photoresist coating device

3:第二無塵腔體 3: The second clean chamber

31:第二滾輪固定裝置 31: The second roller fixing device

4:固化裝置 4: curing device

5:顯影設備 5: Development equipment

6:蝕刻設備 6: Etching equipment

7:推車 7: cart

71:推車本體 71: Cart body

711:承載支架 711: Carrying bracket

72:防塵套件 72: Dustproof kit

721:防塵空間 721: Dustproof Space

200:金屬滾輪 200: Metal roller

201:外表面 201: Outer surface

Claims (10)

一種光刻系統，用來在一金屬滾輪的外表面上形成一壓印層，所述光刻系統包括： 一第一無塵腔體，用來避免所述金屬滾輪被環境中的汙染源黏附，並且所述第一無塵腔體包含一第一滾輪固定裝置，其用來夾持並轉動所述金屬滾輪； 一光阻塗佈裝置，設置於所述第一無塵腔體中，並且所述光阻塗佈裝置用來在所述金屬滾輪的所述外表面上塗佈一光阻層； 一第二無塵腔體，用來避免所述金屬滾輪被環境中的汙染源黏附，並且所述第二無塵腔體包含一第二滾輪固定裝置，其用來夾持並轉動所述金屬滾輪； 一固化裝置，設置於所述第二無塵腔體中，並且所述固化裝置用來將一圖案化光源照射於所述光阻層，以使所述光阻層的一側形成多個曝光圖案； 一顯影設備，設置於所述第二無塵腔體中，並且所述顯影設備用來移除所述光阻層上的多個所述曝光圖案的材料，並形成一圖案化光阻層；及 一蝕刻設備，設置於所述第二無塵腔體中，並且所述蝕刻設備用來以非等向性蝕刻方式對所述圖案化光阻層進行蝕刻以形成所述壓印層。 A photoetching system is used to form an imprinting layer on the outer surface of a metal roller. The photoetching system includes: A first dust-free cavity is used to prevent the metal roller from being adhered to pollution sources in the environment, and the first dust-free cavity includes a first roller fixing device for clamping and rotating the metal roller ； A photoresist coating device arranged in the first dust-free cavity, and the photoresist coating device is used to coat a photoresist layer on the outer surface of the metal roller; A second dust-free cavity is used to prevent the metal roller from being adhered to pollution sources in the environment, and the second dust-free cavity includes a second roller fixing device for clamping and rotating the metal roller ； A curing device is arranged in the second dust-free cavity, and the curing device is used to irradiate a patterned light source on the photoresist layer, so that multiple exposures are formed on one side of the photoresist layer pattern; A developing device arranged in the second dust-free cavity, and the developing device is used to remove a plurality of materials of the exposure pattern on the photoresist layer, and form a patterned photoresist layer; and An etching device is arranged in the second dust-free cavity, and the etching device is used to etch the patterned photoresist layer in an anisotropic etching manner to form the imprint layer. 如請求項1所述的光刻系統，其中，所述蝕刻設備進一步包含一第一蝕刻機構，其能以所述壓印層為遮罩，並透過非等向蝕刻手段蝕刻所述金屬滾輪的所述外表面，而於所述外表面形成多個壓印圖形。The lithography system according to claim 1, wherein the etching equipment further includes a first etching mechanism that can use the imprint layer as a mask and etch the metal roller through anisotropic etching means The outer surface, and a plurality of embossed patterns are formed on the outer surface. 如請求項1所述的光刻系統，其中，所述光刻系統進一步包含一推車，用來將所述金屬滾輪自所述第一無塵腔體移入所述第二無塵腔體中。The lithography system according to claim 1, wherein the lithography system further includes a cart for moving the metal roller from the first dust-free cavity into the second dust-free cavity . 如請求項2所述的光刻系統，其中，所述蝕刻設備進一步包含一第二蝕刻機構，其能用來在所述外表面形成多個所述壓印圖形，使任一個所述壓印圖形的深度介於0.2微米至0.6微米之間，並使任一個所述壓印圖形的寬度介於0.3微米至0.8微米之間。The lithography system according to claim 2, wherein the etching equipment further includes a second etching mechanism, which can be used to form a plurality of the imprint patterns on the outer surface, so that any one of the imprints The depth of the pattern is between 0.2 μm and 0.6 μm, and the width of any one of the embossed patterns is between 0.3 μm and 0.8 μm. 如請求項1所述的光刻系統，其中，所述顯影設備包含： 一浸潤裝置，用來容納一顯影劑；及 一移動裝置，用來使所述第二滾輪固定裝置與所述浸潤裝置相對地移動，以使所述浸潤裝置能用來將其所容納的所述顯影劑浸潤於局部所述光阻層。 The lithography system according to claim 1, wherein the developing device includes: An infiltration device to contain a developer; and A moving device is used to move the second roller fixing device and the infiltration device relatively, so that the infiltration device can be used to infiltrate the developer contained in the photoresist layer on a part of the photoresist layer. 如請求項1所述的光刻系統，其中，所述顯影設備進一步包含一速度控制機構，電性連接於所述第二滾輪固定裝置，並且所述顯影設備用來使所述第二滾輪固定裝置選擇性地以一浸潤速度以及一甩乾速度轉動所述金屬滾輪；其中，所述速度控制機構能用來在所述光阻層被所述浸潤裝置中的所述顯影劑浸潤時，使所述第二滾輪固定裝置以所述浸潤速度轉動所述金屬滾輪而令所述光阻層被所述顯影劑均勻浸潤，使部分所述光阻層溶於所述顯影劑中，進而形成所述圖案化光阻層。The lithography system according to claim 1, wherein the developing device further includes a speed control mechanism electrically connected to the second roller fixing device, and the developing device is used to fix the second roller The device selectively rotates the metal roller at a wetting speed and a spinning speed; wherein, the speed control mechanism can be used to make the photoresist layer wet by the developer in the wetting device The second roller fixing device rotates the metal roller at the wetting speed so that the photoresist layer is evenly infiltrated by the developer, so that part of the photoresist layer is dissolved in the developer to form a The patterned photoresist layer. 如請求項5所述的光刻系統，其中，所述顯影設備進一步包含一沖洗裝置，用來在所述圖案化光阻層離開所述浸潤裝置內的所述顯影劑時，以水沖洗分布於所述圖案化光阻層的所述顯影劑。The lithography system according to claim 5, wherein the developing device further includes a washing device for washing the distribution with water when the patterned photoresist layer leaves the developer in the infiltration device The developer in the patterned photoresist layer. 如請求項7所述的光刻系統，其中，所述浸潤裝置進一步包含一蓋體，並且所述蓋體用來在所述沖洗裝置沖洗分布於所述圖案化光阻層的所述顯影劑時，阻擋使用過的水與使用過的所述顯影劑回流到所述浸潤裝置中。The lithography system according to claim 7, wherein the infiltration device further includes a cover, and the cover is used for washing the developer distributed on the patterned photoresist layer in the washing device At this time, the used water and the used developer are prevented from flowing back into the infiltration device. 如請求項6所述的光刻系統，其中，所述速度控制機構能用來控制所述第二滾輪固定裝置，以使所述金屬滾輪以介於1轉/分鐘（RPM）至120轉/分鐘的所述浸潤速度轉動。The lithography system according to claim 6, wherein the speed control mechanism can be used to control the second roller fixing device so that the metal roller can rotate at a speed between 1 revolution per minute (RPM) to 120 revolutions per minute (RPM). The infiltration rate of minutes rotates. 如請求項6所述的光刻系統，其中，所述速度控制機構能用來控制所述第二滾輪固定裝置，以使所述金屬滾輪以介於2900轉/分鐘（RPM）至4500轉/分鐘的所述甩乾速度轉動。The lithography system according to claim 6, wherein the speed control mechanism can be used to control the second roller fixing device so that the metal roller rotates at a speed between 2900 revolutions per minute (RPM) to 4500 revolutions per minute (RPM). The spin-drying speed of minutes rotates.

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