TWM588865U

TWM588865U - Display panel structure with magnetic light-emitting element

Info

Publication number: TWM588865U
Application number: TW108213967U
Authority: TW
Inventors: 馮祥銨; 涂家瑋; 鍾承育; 陳亞理
Original assignee: 晶呈科技股份有限公司
Priority date: 2019-10-23
Filing date: 2019-10-23
Publication date: 2020-01-01

Abstract

一種具有磁性發光元件的顯示面板結構，包含一顯示基板、磁性發光元件及頂導電膜層。磁性發光元件係設置於顯示基板之上表面上，並透過一第一焊接層接合顯示基板之上表面，頂導電膜層係設置於磁性發光元件之上方，並透過第二焊接層接合於磁性發光元件。磁性發光元件係包含垂直型發光二極體晶粒，並具有一初始磁導率，其係由一磁性基板與設置於磁性基板上之磊晶電極層組合而成。本創作提供的磁性基板基於其初始磁導率，可符合產業的巨量移轉技術，更可在結合其他金屬層後兼具高熱傳導係數與低熱膨脹係數的優勢，使其所形成的結構更具競爭力。A display panel structure with a magnetic light-emitting element includes a display substrate, a magnetic light-emitting element and a top conductive film layer. The magnetic light emitting element is arranged on the upper surface of the display substrate, and is joined to the upper surface of the display substrate through a first soldering layer, and the top conductive film layer is arranged above the magnetic light emitting element and is joined to the magnetic light emitting through the second soldering layer element. The magnetic light-emitting device includes vertical light-emitting diode crystal grains and has an initial magnetic permeability, which is composed of a magnetic substrate and an epitaxial electrode layer provided on the magnetic substrate. The magnetic substrate provided by this creation is based on its initial magnetic permeability, which can meet the industry's massive transfer technology, and can combine the advantages of high thermal conductivity and low thermal expansion coefficient after combining with other metal layers, making the resulting structure more Competitive.

Description

具有磁性發光元件的顯示面板結構Display panel structure with magnetic light emitting element

本創作係關於一種顯示面板結構，特別是一種具有初始磁導率之垂直型發光二極體晶粒的磁性發光元件的顯示面板結構。This creation relates to a display panel structure, in particular to a display panel structure of a magnetic light-emitting element having vertical light-emitting diode crystal grains with initial permeability.

按，發光二極體(Light Emitting Diode，LED)係為一種經由半導體技術所製成的光源，由三五族(III-V族)化合物半導體所形成，其發光原理係為利用半導體中電子和電洞結合而發出光子，不同於傳統燈泡需在上千度的高溫操作，也不必像日光燈需使用的高電壓激發電子束，發光二極體和一般的電子元件相同，只需要2至4伏特(V)的電壓，且在一般溫度環境下即可正常運作，相較於傳統鎢絲燈泡而言，具備有壽命長、省電節能、故障率低、光線穩定、發光效率高、和各式燈具相容性高的優點，因此發光壽命也比傳統光源長，已成為目前市場上的主流商品。According to press, Light Emitting Diode (LED) is a light source made by semiconductor technology, which is formed by Group III-V (III-V) compound semiconductors, and its luminescence source is 利 used in semiconductor Electricity 洞 combines to emit photons, 不 Same as traditional bulbs that need to be operated at a high temperature of thousands 度, and 不 Must be like the high voltage excitation electron beam used by fluorescent lamps. The light-emitting diodes are the same as ordinary electronic components, only 2 to 4 volts (V) voltage, and can operate normally under normal temperature environment. Compared with traditional tungsten light bulbs, it has long life, energy saving, low failure rate, stable light, high luminous efficiency, and various The advantage of high compatibility of lamps and lanterns, so the luminous life is also longer than traditional light sources, has become the mainstream commodity on the market.

一般而言，發光二極體的晶粒結構可分為以下兩種：水平型結構(Horizontal)和垂直型結構(Vertical)，其中，水平型發光二極體的二電極係位在LED晶粒的同一側，而垂直型發光二極體的二電極則是分別位在 LED晶粒的磊晶層的二側，綜觀來看，垂直型發光二極體與水平型發光二極體相比，垂直型發光二極體更具有亮度高、散熱快、光衰小及穩定性高等優點，並且，無論在結構、光電參數、熱學特性、光衰及成本等方面，垂直型發光二極體的散熱功效均遠遠優於水平型發光二極體。基於垂直型發光二極體的良好散熱特性，可以將晶片產生的熱量及時導出，進而將晶片和螢光粉的性能衰減至最低，使發光二極體晶粒具有亮度高、散熱快、光衰小及光色漂移小等優勢，並且提供更可靠的穩定性。Generally speaking, the crystal structure of the light-emitting diode can be divided into the following two types: horizontal structure (Vertical) and vertical structure (Vertical), in which the two-electrode system of the horizontal light-emitting diode is located in the LED die On the same side, the two electrodes of the vertical light-emitting diode are located on the two sides of the epitaxial layer of the LED die. Looking at the whole, the vertical light-emitting diode is compared with the horizontal light-emitting diode. Vertical light-emitting diodes have the advantages of high brightness, fast heat dissipation, low light decay and high stability. Moreover, regardless of the structure, photoelectric parameters, thermal characteristics, light attenuation and cost, the heat dissipation of vertical light-emitting diodes The efficacy is far superior to the horizontal light-emitting diode. Based on the good heat dissipation characteristics of the vertical light-emitting diode, the heat generated by the chip can be exported in time, and the performance of the chip and the phosphor powder can be attenuated to a minimum, so that the light-emitting diode grains have high brightness, fast heat dissipation, and light attenuation Small and light color drift and other advantages, and provide more reliable stability.

更進一步而言，有鑑於微發光二極體(Micro LED)具有節能、機構簡易、體積小、薄型等特性，再加上擁有自發光，無需背光源，且解析度超高等優點，已被視為繼OLED之後的下一世代顯示器技術。其中，Micro LED係可視為LED微縮化和矩陣化的技術，也就是在晶圓上整合高密度且微小尺寸的LED陣列，其中的每一個像素皆可定址、單獨驅動點亮。LED　inside 2017年報告指出，若以全面取代現有液晶顯示器的零組件的規模來推估，包括背光模組、液晶、偏光板等，那麼未來Micro LED的潛在市場規模約可達到300至400億美元以上。不過，值得注意的是，隨著Micro LED的持續進展，截至目前為止，Micro LED的製造成本仍居高不下，影響其商用化進程，其中的關鍵原因在於「巨量轉移 (Mass Transfer)」的微組裝技術瓶頸仍待突破。Furthermore, in view of the characteristics of energy saving, simple structure, small size, and thinness of Micro LED, coupled with the advantages of self-illumination, no backlight, and ultra-high resolution, it has been regarded as It is the next generation display technology after OLED. Among them, Micro LED can be regarded as LED miniaturization and matrix technology, that is, integrating high-density and small-size LED arrays on the wafer, where each pixel can be addressed and driven separately. LED　inside 2017 report pointed out that if the size of the components to replace the existing LCD display is fully estimated, including backlight modules, liquid crystals, polarizing plates, etc., then the future potential market size of Micro LED can reach about 30 to 40 billion US dollars the above. However, it is worth noting that as Micro LED continues to progress, as of now, the manufacturing cost of Micro LED is still high, affecting its commercialization process. The key reason is that the "mass transfer" (Mass Transfer) The micro-assembly technology bottleneck still needs to be broken.

有鑒於此，隨著科技發展，電子產品將持續走向高整合、多功能、微小化等趨勢，如何能同時大量轉移發光二極體的微組裝將成為下一代新興技術急需突破的要點之一，此技術首先可用於Micro LED顯示器，以俾使相關廠商能夠快速地將大量的Micro LED晶片移轉至基板上，如此一來方可降低成本。故本申請人係有感於上述缺失之可改善，且依據多年來從事此方面之相關經驗，悉心觀察且研究之，並配合學理之運用，而提出一種設計新穎且有效改善上述缺失之本創作，其揭露一種具有磁性發光元件的顯示面板結構，其係可用於滿足現今Micro LED的巨量移轉技術，以提供LED在生產製程中可以大量傳輸或移轉作業之用，其詳細之架構及實施方式將詳述於下。In view of this, with the development of science and technology, electronic products will continue to move toward high integration, multi-function, miniaturization and other trends. How to simultaneously transfer micro-assembly of light-emitting diodes in large quantities will become one of the key points for the next generation of emerging technologies that need to be breakthrough. This technology can be used in Micro LED displays first, so that relevant manufacturers can quickly transfer a large number of Micro LED chips to the substrate, so as to reduce costs. Therefore, the applicant feels that the above deficiencies can be improved, and based on years of relevant experience in this area, carefully observed and studied, and in conjunction with the use of academic principles, he proposes a novel design that effectively improves the above deficiencies. It discloses a display panel structure with a magnetic light-emitting element, which can be used to meet the current mass transfer technology of Micro LED to provide a large number of LEDs that can be transferred or transferred during the production process. Its detailed structure and The embodiment will be described in detail below.

本創作的主要目的係在於提供一種具有磁性發光元件的顯示面板結構，其磁性發光元件中所使用的基板因具有初始磁導率，故可以使發光二極體晶粒導通微電流，達成無線發光之應用。The main purpose of this creation is to provide a display panel structure with a magnetic light-emitting element. The substrate used in the magnetic light-emitting element has an initial magnetic permeability, so that the light-emitting diode die can conduct a micro current to achieve wireless light emission. Application.

本創作的另一目的係在於提供一種具有磁性發光元件的顯示面板結構，其中具有初始磁導率的磁性基板係可應用於微發光二極體的巨量轉移技術，解決現今微發光二極體的巨量移轉困擾，以滿足發光二極體在生產製程中可以大量傳輸或移轉作業之用，有效解決習知Micro LED的製造成本仍居高不下的問題。Another object of this creation is to provide a display panel structure with a magnetic light-emitting element, in which a magnetic substrate with an initial permeability can be applied to the mass transfer technology of micro-luminescent diodes to solve current micro-luminescent diodes The huge amount of transfer is troubled to meet the needs of light-emitting diodes that can be transferred or transferred in large quantities during the production process, effectively solving the problem that the manufacturing cost of conventional Micro LEDs remains high.

本創作的再一目的係在於提供一種具有磁性發光元件的顯示面板結構，其係可進一步提供一種散熱效率高於水平型發光二極體晶粒的垂直型發光二極體晶粒結構，以在形成發光二極體封裝製程後，提供更高發光效能的LED模組。A further object of this creation is to provide a display panel structure with magnetic light-emitting elements, which can further provide a vertical light-emitting diode grain structure with a heat dissipation efficiency higher than that of the horizontal light-emitting diode grains, in order to After forming the light-emitting diode packaging process, it provides LED modules with higher luminous efficacy.

為了達成上述的目的，本創作係提供一種具有磁性發光元件的顯示面板結構，包含有一顯示基板，其係具有一上表面；一磁性發光元件，其係設置於該顯示基板之上表面之上方，並透過一第一焊接層接合於顯示基板之上表面，其中，磁性發光元件係包含一垂直型發光二極體晶粒並具有一初始磁導率；以及一頂導電膜層，係設置於該磁性發光元件之上方，並透過一第二焊接層接合於磁性發光元件。In order to achieve the above object, the present invention provides a display panel structure with a magnetic light-emitting element, which includes a display substrate having an upper surface; a magnetic light-emitting element disposed above the upper surface of the display substrate, And bonded to the upper surface of the display substrate through a first soldering layer, wherein the magnetic light-emitting device includes a vertical light-emitting diode grain and has an initial magnetic permeability; and a top conductive film layer is disposed on the Above the magnetic light emitting element, it is bonded to the magnetic light emitting element through a second soldering layer.

根據本創作之一實施例，其中所述的垂直型發光二極體晶粒係由一磁性基板與設置於該磁性基板上之一磊晶電極層組合而成。磊晶電極層中可包含有一連接金屬層，其係位於該磁性基板上；以及至少一磊晶晶粒，設置於該連接金屬層上，且每一磊晶晶粒係具有一電極單元，使得磁性基板係可藉由其初始磁導率以往磊晶電極層導通一微電流。According to an embodiment of the present invention, the vertical light-emitting diode crystal grains are composed of a magnetic substrate and an epitaxial electrode layer disposed on the magnetic substrate. The epitaxial electrode layer may include a connecting metal layer on the magnetic substrate; and at least one epitaxial grain is disposed on the connecting metal layer, and each epitaxial grain has an electrode unit, so that The magnetic substrate can conduct a slight current to the epitaxial electrode layer through its initial permeability.

更進一步而言，根據本創作之一實施例，其中，所述的磁性基板係至少包含一第一金屬層，該第一金屬層之材質係為鎳鐵合金。或者，所述的磁性基板更可包括一第二金屬層，其係設置於第一金屬層之上表面或下表面，第二金屬層之材質係為銅。又抑或，所述的磁性基板可同時包含二第二金屬層，其係分別設置於第一金屬層之上表面與下表面，並藉由切割、真空加熱及研磨拋光的方式組合該第一、第二金屬層，以使本新型所揭露之磁性基板可同時具有高熱傳導係數、低熱膨脹係數與初始磁導率。Furthermore, according to an embodiment of the present invention, wherein the magnetic substrate includes at least a first metal layer, the material of the first metal layer is nickel-iron alloy. Alternatively, the magnetic substrate may further include a second metal layer, which is disposed on the upper or lower surface of the first metal layer, and the material of the second metal layer is copper. Or alternatively, the magnetic substrate may include two second metal layers at the same time, which are respectively disposed on the upper surface and the lower surface of the first metal layer, and combine the first, the second by the way of cutting, vacuum heating and grinding and polishing The second metal layer enables the magnetic substrate disclosed by the present invention to have a high thermal conductivity coefficient, a low thermal expansion coefficient, and an initial magnetic permeability.

其中，所述磁性基板所包含的第二金屬層、第一金屬層、第二金屬層之厚度比為1：2.5～3.5：1。磁性基板的厚度係小於或等於200μm。The thickness ratio of the second metal layer, the first metal layer, and the second metal layer included in the magnetic substrate is 1:2.5-3.5:1. The thickness of the magnetic substrate is less than or equal to 200 μm.

因此，在本新型形成磊晶晶粒後，更可依磊晶晶粒之組數進行分割，並藉由打線及封裝，以形成所述的垂直型發光二極體。且該發光二極體具有無線生電功能，以進行無線發光。Therefore, after the epitaxial grains are formed in the present invention, they can be divided according to the number of epitaxial grains, and the vertical light-emitting diode can be formed by wire bonding and packaging. And the light-emitting diode has a wireless electricity generation function to perform wireless light emission.

同時，基於該垂直型發光二極體係形成於一帶有初始磁導率的磁性基板上，本新型係可進一步利用磁陣列吸附的原理，以單次大量吸取本創作帶有軟磁性的垂直型發光二極體晶粒結構，將可在後續的面板生產作業過程，運用此一磁力達到巨量轉移的效果，有效的降低習知製程作業之成本過於龐大及程序過於繁冗的問題，提升其產業競爭力，並且解決現今Micro LED的巨量轉移技術的缺失。At the same time, based on the vertical light-emitting diode system formed on a magnetic substrate with initial permeability, the new system can further use the principle of magnetic array adsorption to absorb a large amount of vertical light with soft magnetism in a single shot The diode crystal structure will be able to use this magnetic force to achieve the effect of massive transfer in the subsequent panel production operation process, effectively reducing the problems of excessively large cost and excessively complicated procedures in the conventional manufacturing process, and enhancing its industrial competition Power, and to solve the lack of mass transfer technology of Micro LED today.

底下藉由具體實施例配合所附的圖式詳加說明，當更容易瞭解本創作之目的、技術內容、特點及其所達成之功效。The following detailed descriptions will be made with specific examples and accompanying drawings to make it easier to understand the purpose, technical content, characteristics, and effects of the creation.

有鑑於上述先前技術所闡明之種種缺失，本創作係旨在提供一種具有磁性發光元件的顯示面板結構，藉由將發光二極體晶粒製作於一帶有初始磁導率的磁性基板上，本創作所提供之結構係可通過該磁性基板之磁特性，應用磁陣列吸附的技術，滿足微發光二極體的巨量轉移之需求，由此解決習知Micro LED之製造成本及程序過於龐大與冗雜的問題。In view of the above-mentioned deficiencies explained in the prior art, this creation aims to provide a display panel structure with a magnetic light-emitting device. By manufacturing the light-emitting diode crystal grains on a magnetic substrate with initial permeability, The structure provided by the creation can use the magnetic characteristics of the magnetic substrate to apply the technology of magnetic array adsorption to meet the needs of the mass transfer of micro-luminescent diodes, thus solving the problem of the excessively large manufacturing cost and procedures of the conventional Micro LED. Verbose question.

首先，請先參照本創作第1圖所示，一種具有磁性發光元件的顯示面板結構包含一顯示基板10、一磁性發光元件30、以及一頂導電膜層60。其中顯示基板10係具有一上表面，磁性發光元件30係設置於該顯示基板10之上表面之上方，並透過一第一焊接層20接合於該顯示基板10之上表面。頂導電膜層60係設置於磁性發光元件30之上方，並透過一第二焊接層40接合於所述的磁性發光元件30。根據本創作之實施例，為了使磁性發光元件30可完整且緊密地接合於顯示基板10與頂導電膜層60之間，所使用之第一焊接層20例如可包含有一銦22及金24，第二焊接層40例如可包含有一銦44及金42。First, please refer to FIG. 1 of this creation. A display panel structure with a magnetic light-emitting element includes a display substrate 10, a magnetic light-emitting element 30, and a top conductive film layer 60. The display substrate 10 has an upper surface, and the magnetic light emitting element 30 is disposed above the upper surface of the display substrate 10 and is bonded to the upper surface of the display substrate 10 through a first solder layer 20. The top conductive film layer 60 is disposed above the magnetic light emitting element 30 and is joined to the magnetic light emitting element 30 through a second solder layer 40. According to the embodiment of the present invention, in order to allow the magnetic light emitting element 30 to be completely and tightly bonded between the display substrate 10 and the top conductive film layer 60, the first solder layer 20 used may include, for example, an indium 22 and gold 24, The second solder layer 40 may include, for example, an indium 44 and gold 42.

本創作所揭露之磁性發光元件30中係包含一垂直型發光二極體晶粒，並具有一初始磁導率。詳細而言，請參閱本創作圖示第1圖所繪製，其中垂直型發光二極體晶粒係由一磁性基板32與設置於該磁性基板32上之一磊晶電極層34組合而成。頂導電膜層60係為以氧化銦錫材質製成之透明導電膜層（Indium Tin Oxide，ITO）。The magnetic light-emitting device 30 disclosed in this work includes a vertical light-emitting diode crystal grain and has an initial magnetic permeability. In detail, please refer to FIG. 1 of the authoring drawing, in which the vertical light-emitting diode grain is composed of a magnetic substrate 32 and an epitaxial electrode layer 34 disposed on the magnetic substrate 32. The top conductive film layer 60 is a transparent conductive film layer (ITO) made of indium tin oxide.

一般而言，磊晶電極層34中可包含有連接金屬層341及至少一磊晶晶粒343，在本實施例中，先以一個磊晶晶粒343為例說明，連接金屬層341係連接於磁性基板32上，磊晶晶粒343設置於連接金屬層341上。其中，所述的連接金屬層341中可進一步包含有接觸層、反射層及電流散佈層(圖中未示)，並以接觸層位在磁性基板32上，反射層位在接觸層上，電流散佈層位在反射層上，最後再於反射層上設有該磊晶晶粒343。在本實施例中，接觸層例如可為一p-contact，反射層例如可為一Reflector，電流散佈層可為一p-GaP。Generally speaking, the epitaxial electrode layer 34 may include a connection metal layer 341 and at least one epitaxial grain 343. In this embodiment, one epitaxial grain 343 is taken as an example for illustration, and the connection metal layer 341 is connected On the magnetic substrate 32, the epitaxial die 343 is disposed on the connecting metal layer 341. Wherein, the connecting metal layer 341 may further include a contact layer, a reflective layer and a current spreading layer (not shown), and the contact layer is located on the magnetic substrate 32, and the reflective layer is located on the contact layer. The scattering layer is located on the reflective layer, and finally the epitaxial grain 343 is provided on the reflective layer. In this embodiment, the contact layer may be a p-contact, the reflective layer may be a Reflector, and the current spreading layer may be a p-GaP.

同樣地，磊晶晶粒343中亦可進一步地包含有一第一磷化鋁鎵銦(AlGaInP)層、多量子井(MQWs)層、第二磷化鋁鎵銦層及砷化鎵(GaAs)層(圖中未示)；舉例來說，根據本創作之一實施態樣中，第一磷化鋁鎵銦層例如可為一p-AlGaInP，第二磷化鋁鎵銦層例如可為n-AlGaInP，而砷化鎵層可為一n-GaAs。Similarly, the epitaxial grain 343 may further include a first aluminum gallium indium phosphide (AlGaInP) layer, multiple quantum wells (MQWs) layer, a second aluminum gallium indium phosphide layer and gallium arsenide (GaAs) Layer (not shown in the figure); for example, according to an implementation aspect of this creation, the first aluminum gallium indium phosphide layer may be, for example, a p-AlGaInP, and the second aluminum gallium indium phosphide layer may be, for example, n -AlGaInP, and the gallium arsenide layer may be an n-GaAs.

因此，基於本創作所揭露的垂直型發光二極體晶粒，其係提供於一帶有初始磁導率(Initial Magnetic Permeability)之磁性基板32上，其具有約略大於2000高斯的軟磁性，可以使得該磁性基板32藉由其初始磁導率，以往磊晶電極層34導通微電流，使得本案所形成的垂直型發光二極體晶粒結構在組裝成LED模組後，具備無線生電功能，並且可以達到無線發光的新應用，以達到高功率LED的應用需求。Therefore, based on the vertical light-emitting diode grains disclosed in this work, it is provided on a magnetic substrate 32 with an initial magnetic permeability (Initial Magnetic Permeability), which has a soft magnetism of slightly greater than 2000 Gauss, which can make With its initial magnetic permeability, the magnetic substrate 32 conducts micro-current through the epitaxial electrode layer 34 in the past, so that the vertical light-emitting diode grain structure formed in this case has a wireless power generation function after being assembled into an LED module. And it can reach the new application of wireless lighting to meet the application requirements of high-power LED.

再者，根據本新型所揭露之磁性基板32，由於具有所述的軟磁性及初始磁導率，使得其發光二極體晶粒本身可以作為磁導結構，可以有效應用在生產作業過程中，因為每一發光二極體晶粒的體積十分微小，不易透過人工方式進行夾取，即便透過機器的夾取，也需要十分精密，因此在大量傳輸上，具有相當的難度。然而，利用本創作所揭露之結構，只要與帶有磁性的器材結合，例如微小的磁性針頭，應用在機器手臂上，即可利用磁陣列吸附的原理，以一次大量吸取本創作帶有軟磁性的垂直型發光二極體晶粒結構，將可在生產作業過程，運用此一磁力達到巨量轉移的效果，有效的提升產業生產的競爭力，並且解決現今Micro LED的巨量轉移技術的缺失，其磁陣列吸附的過程係如本新型所提供之圖式第2圖～第3圖所示，當一晶圓200上係具有例如8萬多顆的本創作所揭露之垂直型發光二極體晶粒時，便可利用帶有磁性探針的載具或機器手臂，以間隔的方式吸取該垂直型發光二極體晶粒26、27、28，並將該等晶粒放置於顯示基板10上，當應用於TFT面板時，選用顯示基板10為薄膜電晶體液晶顯示面板，本創作係可成功地實現Micro LED之顯示面板結構中巨量轉移 (Mass Transfer)的微組裝技術。Furthermore, according to the magnetic substrate 32 disclosed in the present invention, due to the soft magnetic properties and initial permeability described above, the light emitting diode grain itself can be used as a magnetic permeability structure and can be effectively used in the production process. Because the volume of each light-emitting diode crystal grain is very small, it is not easy to grip it manually. Even if it is gripped by a machine, it needs to be very precise, so it is quite difficult to transmit in large quantities. However, using the structure disclosed in this creation, as long as it is combined with magnetic equipment, such as tiny magnetic needles, applied to the robot arm, the principle of magnetic array adsorption can be used to absorb this creation with soft magnetism in a large amount at a time. The vertical light-emitting diode crystal structure will be able to use this magnetic force to achieve the effect of mass transfer during the production operation process, effectively enhance the competitiveness of industrial production, and solve the lack of current Micro LED mass transfer technology The magnetic array adsorption process is shown in Figures 2 to 3 of the diagram provided by the new model. When a wafer 200 has, for example, more than 80,000 vertical light-emitting diodes disclosed in this creation In the case of bulk crystals, the vertical light-emitting diode crystals 26, 27, 28 can be sucked at intervals with a carrier or robot arm with a magnetic probe and placed on the display substrate On the 10th, when applied to TFT panels, the display substrate 10 is selected as a thin film transistor liquid crystal display panel. This creation can successfully realize the micro-assembling technology of mass transfer in the display panel structure of Micro LED.

更進一步而言，請參閱第4圖、第5圖、第6圖及第7圖所示，其係揭露本新型所提出具有磁性發光元件的顯示面板結構中，其磁性基板的四種不同實施態樣。首先，如第4圖所示，磁性基板32係可包含有一第一金屬層321及二第二金屬層322，此二第二金屬層322係分別位在第一金屬層321的一上表面及一下表面，在本實施例中第一金屬層321之材質係為鎳鐵合金，該合金例如可為鎳含量達36%的鎳鐵合金，第二金屬層322之材質則為銅，而第一金屬層321與第二金屬層322的厚度比為2.5～3.5：1，以形成從下至上為第二金屬層322：第一金屬層321：第二金屬層322為1：2.5～3.5：1，在本實施例中可先以第一金屬層321與第二金屬層322的厚度比為3：1說明，例如第一金屬層321的最佳厚度為60μm，第二金屬層322的最佳厚度為20μm，然本創作當不以此為尺寸限制，此磁性基板的厚度可以小於或等於200μm。Further, please refer to FIG. 4, FIG. 5, FIG. 6 and FIG. 7, which disclose four different implementations of the magnetic substrate in the display panel structure with magnetic light emitting element proposed by the present invention Appearance. First, as shown in FIG. 4, the magnetic substrate 32 may include a first metal layer 321 and two second metal layers 322. The two second metal layers 322 are respectively located on an upper surface of the first metal layer 321 and On the lower surface, in this embodiment, the material of the first metal layer 321 is a nickel-iron alloy. The alloy may be, for example, a nickel-iron alloy with a nickel content of 36%, the material of the second metal layer 322 is copper, and the first metal layer The thickness ratio of 321 to the second metal layer 322 is 2.5-3.5:1 to form a second metal layer 322 from bottom to top: the first metal layer 321: the second metal layer 322 is 1:2.5-3.5:1, in In this embodiment, the thickness ratio of the first metal layer 321 and the second metal layer 322 is 3:1. For example, the optimal thickness of the first metal layer 321 is 60 μm, and the optimal thickness of the second metal layer 322 is 20μm, although the original creation should not be used as a size limit, the thickness of the magnetic substrate can be less than or equal to 200μm.

再者，其中所述的第一金屬層321與該第二金屬層322係可藉由切割（如：雷射切割）、真空加熱及研磨拋光（如：化學機研磨或銅金屬拋光）的方式組合而成，以使本創作所揭露之磁性基板除了具有初始磁導率之外，同時更可具備高熱傳導係數及低熱膨脹係數。Furthermore, the first metal layer 321 and the second metal layer 322 can be cut (such as laser cutting), vacuum heating, and polishing (such as chemical machine polishing or copper metal polishing) It is combined to make the magnetic substrate disclosed in this creation not only have initial magnetic permeability, but also have high thermal conductivity and low thermal expansion coefficient.

另一方面而言，本新型所揭露之磁性基板，其實施態樣係不以上述為限。換言之，磁性基板亦可選擇性地僅包含有單一層第二金屬層322，其係設置於該第一金屬層321之上表面或下表面，如本創作第5圖及第6圖所示，又抑或是，磁性基板僅包含有鎳鐵合金的第一金屬層321，如本創作第7圖所示，則同樣可用以實施本新型之創作目的。本領域具通常知識之技術人士，當可在本新型之教示及技術啟發下，根據其產品之實際需求而自行修飾及變化之，唯利用一磁性基板而形成一種具有磁性發光元件的顯示面板結構乃應隸屬於本新型之創作範疇。On the other hand, the implementation of the magnetic substrate disclosed by the present invention is not limited to the above. In other words, the magnetic substrate can also selectively include only a single second metal layer 322, which is disposed on the upper or lower surface of the first metal layer 321, as shown in Figures 5 and 6 of this creation, Or, the magnetic substrate only includes the first metal layer 321 of the nickel-iron alloy. As shown in FIG. 7 of this creation, it can also be used to implement the creative purpose of the present invention. Those skilled in the art with ordinary knowledge can modify and change according to the actual needs of their products under the teaching and technology of this new type, and only use a magnetic substrate to form a display panel structure with magnetic light-emitting elements It should belong to this new creative category.

緣此，綜上所述，本創作係可通過上述之技術方案形成所述的垂直型發光二極體晶粒結構，並使其形成於一帶有初始磁導率的磁性基板上，進而利用磁陣列吸附的原理，以單次大量吸取本創作帶有軟磁性的垂直型發光二極體晶粒結構，將可在後續的面板生產作業過程，運用此一磁力達到巨量轉移的效果，有效的降低習知製程作業之成本過於龐大及程序過於繁冗的問題，提升其產業競爭力，並且解決現今Micro LED的巨量轉移技術的缺失。Therefore, in summary, this creative system can form the vertical light-emitting diode grain structure through the above technical solution and form it on a magnetic substrate with initial permeability, and then use the magnetic The principle of array adsorption is to use a large amount of single absorption to create the vertical light-emitting diode grain structure with soft magnetism, which will be able to use this magnetic force to achieve the effect of massive transfer in the subsequent panel production operation process, effectively The problem of reducing the cost of the conventional process operation is too large and the process is too tedious, improve its industrial competitiveness, and solve the lack of current Micro LED mass transfer technology.

除此之外，當此磁性基板進一步與金屬銅結合形成組合基板時，本創作更進一步地改良了以往的矽基板，在後續的打線封裝製程上，具有更佳的生產良率，且比起其它金屬基板成本更低，例如鉬（Mo）、鎢銅（CuW）及其混合金屬，且本新型的金屬組合基板係可藉由兩種金屬與一混和金屬的組合層疊，不同於一般的金屬基板，使其熱膨脹係數範圍控制於5～7 ppm/K間，最佳實施例則係為6.1（ppm/K@20C），不會太高或太低，並且具有高熱傳導係數，例如：在垂直方向具有20～40 W/mK的熱傳導係數，且在水平方向具有170~280 W/mK的熱傳導係數，可透過連接金屬層以更匹配地接合至磊晶層，且此一利用金屬組合而成的基板，其薄度亦夠薄透，也不需要更多額外的薄化製程，即可提供一種兼具有絕佳之低熱膨脹係數、高熱傳導係數、成本低、良率高且容易接合磊晶層的新型基板選擇。In addition, when this magnetic substrate is further combined with metallic copper to form a combined substrate, this creation further improves the conventional silicon substrate, and has a better production yield in the subsequent wire bonding packaging process, and compared with The cost of other metal substrates is lower, such as molybdenum (Mo), tungsten copper (CuW) and their mixed metals, and the new metal composite substrate can be laminated by the combination of two metals and a mixed metal, which is different from the general metal The substrate has a thermal expansion coefficient range of 5 to 7 ppm/K. The best embodiment is 6.1 (ppm/K@20C), which is not too high or too low, and has a high thermal conductivity coefficient, for example: It has a thermal conductivity of 20-40 W/mK in the vertical direction and a thermal conductivity of 170-280 W/mK in the horizontal direction. It can be connected to the epitaxial layer more closely by connecting the metal layer. The finished substrate is thin enough and does not require more additional thinning processes to provide an excellent low thermal expansion coefficient, high thermal conductivity coefficient, low cost, high yield and easy bonding New substrate selection for epitaxial layer.

以上所述之實施例僅係為說明本創作之技術思想及特點，其目的在使熟習此項技藝之人士能夠瞭解本創作之內容並據以實施，當不能以之限定本創作之專利範圍，即大凡依本創作所揭示之精神所作之均等變化或修飾，仍應涵蓋在本創作之專利範圍。The above-mentioned embodiments are only to illustrate the technical ideas and characteristics of this creation, and its purpose is to enable those who are familiar with this skill to understand the content of this creation and implement it accordingly, but should not limit the scope of the patent of this creation, That is to say, the equal changes or modifications made by Dafan in accordance with the spirit of this creation should still be covered by the patent scope of this creation.

10‧‧‧顯示基板 20‧‧‧第一焊接層 22‧‧‧銦 24‧‧‧金 26、27、28‧‧‧垂直型發光二極體晶粒 30‧‧‧磁性發光元件 32‧‧‧磁性基板 321‧‧‧第一金屬層 322‧‧‧第二金屬層 34‧‧‧磊晶電極層 341‧‧‧連接金屬層 343‧‧‧磊晶晶粒 40‧‧‧第二焊接層 42‧‧‧金 44‧‧‧銦 60‧‧‧頂導電膜層 200‧‧‧晶圓 10‧‧‧Display substrate 20‧‧‧First welding layer 22‧‧‧Indium 24‧‧‧Gold 26, 27, 28 ‧‧‧ vertical light-emitting diode grain 30‧‧‧Magnetic light emitting element 32‧‧‧Magnetic substrate 321‧‧‧First metal layer 322‧‧‧Second metal layer 34‧‧‧Epitaxial electrode layer 341‧‧‧Connect metal layer 343‧‧‧Epitaxial grains 40‧‧‧Second welding layer 42‧‧‧Gold 44‧‧‧Indium 60‧‧‧Top conductive film 200‧‧‧ Wafer

第1圖係為根據本創作一實施例之具有磁性發光元件的顯示面板結構的結構示意圖。第2圖係為根據本創作一實施例之晶圓上具有多個垂直型發光二極體晶粒之示意圖。第3圖係為根據第2圖所示將該垂直型發光二極體晶粒放置於薄膜電晶體液晶顯示面板之示意圖。第4圖係為根據本創作一實施例之磁性基板包含一第一金屬層及二第二金屬層之示意圖。第5圖係為根據本創作一實施例之磁性基板包含一第一金屬層及一第二金屬層之示意圖。第6圖係為根據本創作另一實施例之磁性基板包含一第一金屬層及一第二金屬層之示意圖。第7圖係為根據本創作再一實施例之磁性基板僅包含一第一金屬層之示意圖。 FIG. 1 is a schematic structural diagram of a display panel structure with a magnetic light-emitting element according to an embodiment of the present invention. FIG. 2 is a schematic diagram of a wafer having a plurality of vertical light emitting diode dies on a wafer according to an embodiment of the present invention. FIG. 3 is a schematic diagram of placing the vertical light emitting diode crystal grain on the thin film transistor liquid crystal display panel according to FIG. 2. FIG. 4 is a schematic diagram of a magnetic substrate according to an embodiment of the present invention including a first metal layer and two second metal layers. FIG. 5 is a schematic diagram of a magnetic substrate including a first metal layer and a second metal layer according to an embodiment of the present invention. FIG. 6 is a schematic diagram of a magnetic substrate including a first metal layer and a second metal layer according to another embodiment of the present invention. FIG. 7 is a schematic diagram of a magnetic substrate according to yet another embodiment of the present invention including only a first metal layer.

10‧‧‧顯示基板 10‧‧‧Display substrate

20‧‧‧第一焊接層 20‧‧‧First welding layer

22‧‧‧銦 22‧‧‧Indium

24‧‧‧金 24‧‧‧Gold

30‧‧‧磁性發光元件 30‧‧‧Magnetic light emitting element

32‧‧‧磁性基板 32‧‧‧Magnetic substrate

34‧‧‧磊晶電極層 34‧‧‧Epitaxial electrode layer

341‧‧‧連接金屬層 341‧‧‧Connect metal layer

343‧‧‧磊晶晶粒 343‧‧‧Epitaxial grains

40‧‧‧第二焊接層 40‧‧‧Second welding layer

42‧‧‧金 42‧‧‧Gold

44‧‧‧銦 44‧‧‧Indium

60‧‧‧頂導電膜層 60‧‧‧Top conductive film

Claims

一種具有磁性發光元件的顯示面板結構，包括：一顯示基板，其係具有一上表面；一磁性發光元件，其係設置於該顯示基板之該上表面之上方，並透過一第一焊接層接合於該顯示基板之該上表面，該磁性發光元件係包含一垂直型發光二極體晶粒並具有一初始磁導率；以及一頂導電膜層，係設置於該磁性發光元件之上方，並透過一第二焊接層接合於該磁性發光元件。 A display panel structure with a magnetic light-emitting element, including: A display substrate, which has an upper surface; A magnetic light-emitting element is disposed above the upper surface of the display substrate and is bonded to the upper surface of the display substrate through a first solder layer. The magnetic light-emitting element includes a vertical light-emitting diode crystal Particles and have an initial permeability; and A top conductive film layer is disposed above the magnetic light emitting element, and is joined to the magnetic light emitting element through a second soldering layer.

如請求項1之具有磁性發光元件的顯示面板結構，其中該垂直型發光二極體晶粒係由一磁性基板與設置於該磁性基板上之一磊晶電極層組合而成。The display panel structure with a magnetic light-emitting element according to claim 1, wherein the vertical light-emitting diode crystal grain is composed of a magnetic substrate and an epitaxial electrode layer provided on the magnetic substrate.

如請求項2之具有磁性發光元件的顯示面板結構，其中該磊晶電極層更包含：一連接金屬層，其係位於該磁性基板上；以及至少一磊晶晶粒，其係位於該連接金屬層上，每一該磊晶晶粒上係具有一電極單元。 The display panel structure with a magnetic light-emitting element according to claim 2, wherein the epitaxial electrode layer further includes: A connecting metal layer, which is located on the magnetic substrate; and At least one epitaxial die is located on the connecting metal layer, and each of the epitaxial die has an electrode unit.

如請求項2之具有磁性發光元件的顯示面板結構，其中該磁性基板係至少包含一第一金屬層，該第一金屬層之材質係為鎳鐵合金。The display panel structure with a magnetic light emitting element according to claim 2, wherein the magnetic substrate includes at least a first metal layer, and the material of the first metal layer is nickel-iron alloy.

如請求項4之具有磁性發光元件的顯示面板結構，其中該磁性基板更包括一第二金屬層，其係設置於該第一金屬層之上表面或下表面，該第二金屬層之材質係為銅。The display panel structure with a magnetic light-emitting element according to claim 4, wherein the magnetic substrate further includes a second metal layer, which is disposed on the upper surface or the lower surface of the first metal layer, and the material of the second metal layer is For copper.

如請求項5之具有磁性發光元件的顯示面板結構，其中該第一金屬層與該第二金屬層係藉由切割、真空加熱及研磨拋光的方式組合，以使該磁性基板同時具有高熱傳導係數、低熱膨脹係數與該初始磁導率。The display panel structure with a magnetic light-emitting element according to claim 5, wherein the first metal layer and the second metal layer are combined by cutting, vacuum heating, grinding and polishing, so that the magnetic substrate has a high thermal conductivity coefficient at the same time 1. Low coefficient of thermal expansion and the initial permeability.

如請求項6之具有磁性發光元件的顯示面板結構，其中該切割係為雷射切割，該研磨拋光係為化學機研磨或銅金屬拋光方法。The display panel structure with a magnetic light emitting element according to claim 6, wherein the cutting is a laser cutting, and the grinding and polishing is a chemical mechanical grinding or a copper metal polishing method.

如請求項4之具有磁性發光元件的顯示面板結構，其中該磁性基板更包括二第二金屬層，其係分別設置於該第一金屬層之上表面及下表面，每一該第二金屬層之材質係為銅。The display panel structure with a magnetic light-emitting element according to claim 4, wherein the magnetic substrate further includes two second metal layers, which are respectively disposed on the upper surface and the lower surface of the first metal layer, each of the second metal layers The material is copper.

如請求項8之具有磁性發光元件的顯示面板結構，其中該第一金屬層與二該第二金屬層係藉由切割、真空加熱及研磨拋光的方式組合，以使該磁性基板同時具有高熱傳導係數、低熱膨脹係數與該初始磁導率。The display panel structure with a magnetic light-emitting element according to claim 8, wherein the first metal layer and the two second metal layers are combined by cutting, vacuum heating, grinding and polishing, so that the magnetic substrate has high thermal conductivity at the same time Coefficient, low coefficient of thermal expansion and the initial permeability.

如請求項9之具有磁性發光元件的顯示面板結構，其中該切割係為雷射切割，該研磨拋光係為化學機研磨或銅金屬拋光方法。The display panel structure with a magnetic light emitting element according to claim 9, wherein the cutting is a laser cutting, and the grinding and polishing is a chemical mechanical grinding or a copper metal polishing method.

如請求項8之具有磁性發光元件的顯示面板結構，其中該磁性基板中的該第二金屬層、該第一金屬層、該第二金屬層的厚度比為1：2.5～3.5：1。The display panel structure with a magnetic light-emitting element according to claim 8, wherein the thickness ratio of the second metal layer, the first metal layer, and the second metal layer in the magnetic substrate is 1:2.5-3.5:1.

如請求項8之具有磁性發光元件的顯示面板結構，其中該磁性基板的厚度係小於或等於200μm。The display panel structure with a magnetic light-emitting element according to claim 8, wherein the thickness of the magnetic substrate is less than or equal to 200 μm.

如請求項2之具有磁性發光元件的顯示面板結構，其中該磁性基板係可藉由該初始磁導率以往該磊晶電極層導通一微電流。The display panel structure with a magnetic light-emitting element according to claim 2, wherein the magnetic substrate can conduct a micro-current through the epitaxial electrode layer through the initial magnetic permeability.

如請求項1之具有磁性發光元件的顯示面板結構，其中該第一焊接層係包含銦及金。The display panel structure with a magnetic light-emitting element according to claim 1, wherein the first solder layer includes indium and gold.

如請求項1之具有磁性發光元件的顯示面板結構，其中該第二焊接層係包含銦及金。The display panel structure with a magnetic light-emitting element according to claim 1, wherein the second solder layer includes indium and gold.

如請求項1之具有磁性發光元件的顯示面板結構，其中該頂導電膜層係為以氧化銦錫材質製成之透明導電膜層（ITO）。The display panel structure with a magnetic light-emitting element according to claim 1, wherein the top conductive film layer is a transparent conductive film layer (ITO) made of indium tin oxide.

如請求項1之具有磁性發光元件的顯示面板結構，其中該顯示基板係為一薄膜電晶體液晶顯示面板。The display panel structure with a magnetic light-emitting element according to claim 1, wherein the display substrate is a thin film transistor liquid crystal display panel.