TWM584532U - Improved varistor - Google Patents

Abstract

本創作之壓敏電阻主要具有一陶瓷本體、一供與外部連接之導電結構以及一絕緣層，該絕緣層包覆於該陶瓷本體外，並將該導電結構覆蓋；其中，該絕緣層與該陶瓷本體以及該導電結構之間設有一耐高溫層，藉由該耐高溫層可避免壓敏電阻失效產生之危害。 The varistor of this creation mainly has a ceramic body, a conductive structure for external connection, and an insulating layer. The insulating layer covers the ceramic body and covers the conductive structure. Among them, the insulating layer and the A high temperature resistant layer is provided between the ceramic body and the conductive structure. The high temperature resistant layer can avoid the harm caused by the failure of the varistor.

Description

壓敏電阻改良 Improved varistor

本創作係有關一種具有保護功能，可避免壓敏電阻失效產生之危害的壓敏電阻改良。 This creation is about a varistor improvement with protection function that can avoid the harm caused by the failure of the varistor.

雷擊、開關動作或其他零件損壞所產生的突波或瞬間過電壓，因為會直接擾亂或破壞電子元件或其他電子線路，因此，具優異突波吸收功能的突波保護電路，已廣泛被應用於當作電子元件或電子線路的過電壓或突波保護元件。 Surges or transient overvoltages caused by lightning strikes, switching actions, or damage to other parts can directly disrupt or destroy electronic components or other electronic circuits. Therefore, surge protection circuits with excellent surge absorption have been widely used in Used as an overvoltage or surge protection element for electronic components or electronic circuits.

傳統突波保護電路主要設有一壓敏電阻器，壓敏電阻器具有優越的非線性電阻特性，只要電路出現瞬時過電壓或突波，則壓敏電阻器就會立即動作來抑制過電壓增幅和吸收突波能量，以保護電器設備及元件。若各種類型的瞬時過電壓突波過大、持續或過於頻繁出現，則勢必會導致壓敏電阻器的性能劣化乃至失效。再者，當壓敏電阻接受突波過大或持續性過電壓突波時，於壓敏電阻芯片金屬電極的外緣易產生放電電弧，此局部超高溫可能造成包封材料內側碳化而形成漏電流通道，最終造成元件失效，甚至於導致起火燃燒現象，所以提升壓敏電阻耐突波衝擊能力是一重要課題。 The traditional surge protection circuit is mainly provided with a varistor. The varistor has excellent non-linear resistance characteristics. As long as a transient overvoltage or surge occurs in the circuit, the varistor will immediately act to suppress the overvoltage increase and Absorb surge energy to protect electrical equipment and components. If the various types of transient overvoltage surges are too large, continuous or too frequent, it will inevitably cause the performance of the varistor to deteriorate or even fail. In addition, when the varistor accepts an excessive surge or a continuous overvoltage surge, a discharge arc is easily generated on the outer edge of the metal electrode of the varistor chip. This local ultra-high temperature may cause carbonization inside the encapsulation material to form a leakage current flow. In the end, it will eventually cause component failure and even lead to fire and burning. Therefore, improving the surge resistance of the varistor is an important issue.

有鑑於此，本創作提供一種結構簡單，提供保護功能可避免壓敏電阻失效的改良，為其主要目的者。 In view of this, this creation provides an improvement with a simple structure and a protection function to avoid failure of the varistor, which is its main purpose.

本創作之壓敏電阻主要具有一陶瓷本體、一供與外部連接之導電結構以及一絕緣層，該絕緣層包覆於該陶瓷本體外，並將該導電結構覆蓋；其中，該絕緣層與該陶瓷本體以及該導電結構之間設有一耐高溫層。 The varistor of this creation mainly has a ceramic body, a conductive structure for external connection, and an insulating layer. The insulating layer covers the ceramic body and covers the conductive structure. Among them, the insulating layer and the A high temperature resistant layer is provided between the ceramic body and the conductive structure.

依據上述技術特徵，所述導電結構具有第一、第二電極以及 第一、第二端子，該第一、第二電極分別配置於該陶瓷本體兩相對之表面，該第一端子之一端設置在該陶瓷本體上並電性連接該第一電極，另端則延伸至該陶瓷本體外，該第二端子之一端設置在該陶瓷本體上並電性連接該第二電極，另端則延伸至該陶瓷本體外。 According to the above technical features, the conductive structure has first and second electrodes and First and second terminals, the first and second electrodes are respectively disposed on two opposite surfaces of the ceramic body, one end of the first terminal is disposed on the ceramic body and electrically connected to the first electrode, and the other end extends To the ceramic body, one end of the second terminal is disposed on the ceramic body and electrically connected to the second electrode, and the other end extends to the ceramic body.

依據上述技術特徵，所述絕緣層係將該第一、第二電極以及該第一、第二端子之一端覆蓋，而該第一、第二端子之另端則外露於該絕緣層。 According to the above technical features, the insulating layer covers the first and second electrodes and one end of the first and second terminals, and the other ends of the first and second terminals are exposed to the insulating layer.

依據上述技術特徵，所述耐高溫層係為無機高分子材料或有機高分子材料。 According to the above technical features, the high temperature resistant layer system is an inorganic polymer material or an organic polymer material.

依據上述技術特徵，所述耐高溫層係為矽、鋁、磷、硼或上述之組合物。 According to the above technical features, the high temperature resistant layer is silicon, aluminum, phosphorus, boron, or a combination thereof.

1‧‧‧陶瓷本體 1‧‧‧ceramic body

2‧‧‧導電結構 2‧‧‧ conductive structure

21‧‧‧第一電極 21‧‧‧first electrode

22‧‧‧第二電極 22‧‧‧Second electrode

23‧‧‧第一端子 23‧‧‧first terminal

24‧‧‧第二端子 24‧‧‧Second Terminal

3‧‧‧絕緣層 3‧‧‧ Insulation

4‧‧‧耐高溫層 4‧‧‧ high temperature resistant layer

第1圖所示為本創作中壓敏電阻的結構立體圖。 Figure 1 shows the structural perspective of the varistor in this creation.

第2圖所示為本創作中壓敏電阻的結構示意圖。 Figure 2 shows the structure of the varistor in this creation.

為利 貴審查員瞭解本創作之技術特徵、內容與優點及其所能達成之功效，茲將本創作配合附圖，並以實施例之表達形式詳細說明如下，而其中所使用之圖式，其主旨僅為示意及輔助說明書之用，未必為本創作實施後之真實比例與精準配置，故不應就所附之圖式的比例與配置關係解讀、侷限本創作於實際實施上的權利範圍，合先敘明。 In order to help the examiners understand the technical characteristics, content and advantages of this creation and the effects that it can achieve, we hereby combine this creation with the drawings and explain it in the form of examples in detail below. The drawings used in it are The main purpose is only for the purpose of illustration and supplementary instructions. It may not be the actual proportion and precise configuration after the implementation of the creation. Therefore, the proportion and configuration relationship of the attached drawings should not be interpreted and limited to the scope of rights of the actual implementation of the creation. He Xianming.

請參閱第1圖所示為本創作中壓敏電阻的結構立體圖，以及第2圖所示為本創作中壓敏電阻的結構示意圖，本創作之壓敏電阻主要具有一陶瓷本體1以及一供與外部連接之導電結構2以及一絕緣層3；其中，該絕緣層3與該陶瓷本體1以及該導電結構2之間設有一耐高溫層4。 Please refer to Figure 1 for a perspective view of the structure of the varistor in this creation, and Figure 2 for the structure schematic of the varistor in this creation. The varistor in this creation mainly has a ceramic body 1 and a supply A conductive structure 2 and an insulating layer 3 connected to the outside; wherein a high-temperature resistant layer 4 is provided between the insulating layer 3 and the ceramic body 1 and the conductive structure 2.

如圖所示，該導電結構2具有第一、第二電極21、22以及第一、 第二端子23、24，該第一、第二電極21、22分別配置於該陶瓷本體1兩相對之表面，該第一端子23之一端設置在該陶瓷本體1上並電性連接該第一電極21，另端則延伸至該陶瓷本體1外，該第二端子24之一端設置在該陶瓷本體1上並電性連接該第二電極22，另端則延伸至該陶瓷本體1外；而該絕緣層3則包覆於該陶瓷本體1外，並將第一、第二電極21、22以及第一、第二端子23、24之一端覆蓋；其中，第一、第二電極21、22、第一、第二端子23、24以及絕緣層3之材質為本技術領域習知，故於此不再多加贅述。 As shown in the figure, the conductive structure 2 has first and second electrodes 21 and 22 and first and second electrodes 21 and 22. Second terminals 23 and 24. The first and second electrodes 21 and 22 are respectively disposed on two opposite surfaces of the ceramic body 1. One end of the first terminal 23 is disposed on the ceramic body 1 and is electrically connected to the first The other end of the electrode 21 extends outside the ceramic body 1, one end of the second terminal 24 is disposed on the ceramic body 1 and is electrically connected to the second electrode 22, and the other end extends outside the ceramic body 1; The insulating layer 3 covers the ceramic body 1 and covers one end of the first and second electrodes 21 and 22 and one of the first and second terminals 23 and 24. Among them, the first and second electrodes 21 and 22 The materials of the first and second terminals 23 and 24 and the insulating layer 3 are known in the technical field, and therefore will not be repeated here.

其中，該絕緣層3與該陶瓷本體1以及該導電結構2之間設有一耐高溫層4，如圖所示，該耐高溫層4係包覆於該陶瓷本體1外，並將第一、第二電極21、22以及第一、第二端子23、24之一端覆蓋，該耐高溫層4之包覆面積可以為部分或全部覆蓋，而該耐高溫層4可以為較不易碳化之材料，例如可以為無機高分子材料或有機高分子材料，其中，無機高分子材料中亦可以為矽、鋁、磷、硼或上述之組合物。 A high-temperature resistant layer 4 is provided between the insulating layer 3 and the ceramic body 1 and the conductive structure 2. As shown in the figure, the high-temperature resistant layer 4 covers the ceramic body 1, and the first, The second electrodes 21 and 22 and one end of the first and second terminals 23 and 24 are covered. The covering area of the high-temperature-resistant layer 4 may be partially or fully covered, and the high-temperature-resistant layer 4 may be a material that is not easily carbonized. For example, it may be an inorganic polymer material or an organic polymer material. Among these, the inorganic polymer material may also be silicon, aluminum, phosphorus, boron, or a combination thereof.

因壓敏電阻接受突波過大或持續性過電壓突波時，壓敏電阻之導電結構的外緣易產生放電電弧，此局部超高溫可能造成絕緣層內側碳化而形成漏電流通道，而本創作利用耐高溫層4包覆於該陶瓷本體1以及該導電結構2外，藉由其耐高溫不易碳化之特性，以避免壓敏電阻失效產生之危害，提高壓敏電阻的突波衝擊能力與壽命。 Because the varistor accepts an excessive surge or a continuous overvoltage surge, the outer edge of the conductive structure of the varistor is prone to generate a discharge arc. This local ultra-high temperature may cause carbonization inside the insulation layer to form a leakage current channel. The high temperature resistant layer 4 is used to cover the ceramic body 1 and the conductive structure 2, and its high temperature resistance is not easy to carbonize, so as to avoid the harm caused by the failure of the varistor and improve the surge shock capacity and life of the varistor. .

綜上所述，本創作提供一較佳可行之壓敏電阻改良，爰依法提呈新型專利之申請；本創作之技術內容及技術特點已揭示如上，然而熟悉本項技術之人士仍可能基於本創作之揭示而作各種不背離本案創作精神之替換及修飾。因此，本創作之保護範圍應不限於實施例所揭示者，而應包括各種不背離本創作之替換及修飾，並為以下之申請專利範圍所涵蓋。 To sum up, this creation provides a better and feasible varistor improvement, and submits an application for a new patent according to law; the technical content and technical characteristics of this creation have been revealed as above, but those familiar with this technology may still be based on this Revelation of the creation and various substitutions and modifications without departing from the creative spirit of the case. Therefore, the scope of protection of this creation should not be limited to those disclosed in the embodiments, but should include various substitutions and modifications that do not depart from this creation, and are covered by the scope of patent applications below.

Claims (5)

一種壓敏電阻改良，該壓敏電阻主要具有一陶瓷本體、一供與外部連接之導電結構以及一絕緣層，該絕緣層包覆於該陶瓷本體外，並將該導電結構覆蓋，其特徵在於： 該絕緣層與該陶瓷本體以及該導電結構之間設有一耐高溫層。An improved varistor. The varistor mainly has a ceramic body, a conductive structure for external connection, and an insulating layer. The insulating layer covers the ceramic body and covers the conductive structure. : A high temperature resistant layer is provided between the insulating layer, the ceramic body and the conductive structure. 如請求項1所述之壓敏電阻改良，其中，該導電結構具有第一、第二電極以及第一、第二端子，該第一、第二電極分別配置於該陶瓷本體之表面，該第一端子之一端設置在該陶瓷本體上並電性連接該第一電極，另端則延伸至該陶瓷本體外，該第二端子之一端設置在該陶瓷本體上並電性連接該第二電極，另端則延伸至該陶瓷本體外。The varistor improvement according to claim 1, wherein the conductive structure has first and second electrodes and first and second terminals, and the first and second electrodes are respectively disposed on a surface of the ceramic body, and the first One end of a terminal is disposed on the ceramic body and is electrically connected to the first electrode, and the other end is extended to the ceramic body. One end of the second terminal is disposed on the ceramic body and is electrically connected to the second electrode. The other end extends outside the ceramic body. 如請求項2所述之壓敏電阻改良，其中，該絕緣層係將該第一、第二電極以及該第一、第二端子之一端覆蓋，而該第一、第二端子之另端則外露於該絕緣層。The varistor improvement according to claim 2, wherein the insulating layer covers the first and second electrodes and one end of the first and second terminals, and the other end of the first and second terminals is Exposed to the insulating layer. 如請求項1至3任一項所述之壓敏電阻改良，其中，該耐高溫層係為無機高分子材料或有機高分子材料。The varistor improvement according to any one of claims 1 to 3, wherein the high temperature resistant layer is an inorganic polymer material or an organic polymer material. 如請求項1至3任一項所述之壓敏電阻改良，其中，該耐高溫層係為矽、鋁、磷、硼或上述之組合物。The varistor improvement according to any one of claims 1 to 3, wherein the high-temperature-resistant layer is silicon, aluminum, phosphorus, boron, or a combination thereof.