TWM575806U - Micro channel structure - Google Patents
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Abstract
一種微流道結構，包含一基板，透過蝕刻製程形成至少一流道；一支撐層，透過蝕刻製程形成一導電部：一閥層，透過蝕刻製程形成一可動部以及一中空孔洞，並使基部內側構成一第一腔室，中空孔洞與第一腔室相連通；一第二絕緣層，透過蝕刻製程形成具有一高度之支撐部，支撐部內側構成一第二腔室，第二腔室透過中空孔洞與第一腔室相連通；一振動層，透過蝕刻製程形成一懸浮部；以及一焊墊層。提供具有不同相位電荷之驅動電源至焊墊層，以驅動並控制振動層之懸浮部產生上下位移，以及可動部與導電部之間產生相對位移，以完成流體傳輸。A micro-channel structure comprising a substrate formed by etching process to form at least a first-class track; a support layer formed by a etching process to form a conductive portion: a valve layer, forming a movable portion and a hollow hole through an etching process, and making the inside of the base Forming a first chamber, the hollow hole is in communication with the first chamber; a second insulating layer is formed by the etching process to form a support portion having a height, the inside of the support portion forming a second chamber, and the second chamber is transparent The hole is in communication with the first chamber; a vibrating layer forms a floating portion through an etching process; and a pad layer. A driving power source having different phase charges is provided to the pad layer to drive and control the floating portion of the vibration layer to generate an up-and-down displacement, and a relative displacement between the movable portion and the conductive portion to complete fluid transmission.
Description
本案關於一種微流道結構，尤指一種使用電能驅動之微流道結構。This case relates to a microchannel structure, especially a microchannel structure driven by electric energy.
目前於各領域中無論是醫藥、電腦科技、列印、能源等工業，產品均朝精緻化及微小化方向發展，其中微幫浦、噴霧器、噴墨頭、工業列印裝置等產品所包含之流體輸送結構為其關鍵技術。At present, in various fields, such as medicine, computer technology, printing, energy and other industries, the products are developing in the direction of refinement and miniaturization. Among them, products such as micro-pumps, sprayers, inkjet heads, industrial printing devices, etc. Fluid delivery structures are a key technology.
隨著科技的日新月異，流體輸送結構的應用上亦愈來愈多元化，舉凡工業應用、生醫應用、醫療保健、電子散熱等等，甚至近來熱門的穿戴式裝置皆可見它的踨影，可見傳統的流體輸送結構已漸漸有朝向裝置微小化、流量極大化的趨勢。With the rapid development of technology, the application of fluid transport structures is becoming more and more diversified. For industrial applications, biomedical applications, medical care, electronic heat dissipation, etc., even the most popular wearable devices can be seen. The conventional fluid transport structure has gradually become the trend toward miniaturization of devices and maximization of flow rates.
現有技術中，雖已有利用微機電製程製出一體成型之微型化流體輸送結構，但在使用時因作動方式的不同致使現有的微型化流體輸送結構無法用來輸送氣體，是以，如何藉創新微型化流體輸送結構突破其技術瓶頸，為發展之重要內容。In the prior art, although the micro-electromechanical process has been used to produce an integrally formed miniaturized fluid transport structure, the existing miniaturized fluid transport structure cannot be used to transport gas due to different actuation modes during use, so how to borrow The innovative miniaturized fluid transport structure breaks through its technical bottleneck and is an important part of development.
本案之主要目的係提供一種微流道結構，藉由電能驅動本案之微流道結構，亦可傳輸氣體。本案之微流道結構係利用標準化微機電製程所製作，故開發及量產成本低，並且具有穩定的結構尺寸以及平整度，使得作動的可靠性及使用壽命增加。The main purpose of this case is to provide a micro-channel structure that can drive gas by driving the micro-channel structure of the present case by electric energy. The microchannel structure of this case is made by the standardized MEMS process, so the development and mass production cost is low, and the stable structure size and flatness are achieved, so that the reliability and service life of the operation are increased.
本案之一廣義實施態樣為一種微流道結構，包含：一基板，具有一第一表面及第二表面，透過蝕刻製程形成至少一流道以及一容置槽；一第一絕緣層，透過沉積製程形成於該基板之該第一表面上，且蝕刻露出該基板之該至少一流道；一支撐層，透過沉積製程形成於該第一絕緣層上，且透過蝕刻製程形成一凸部及一導電部，以及透過蝕刻製程露出該基板之該至少一流道；一閥層，透過沉積製程形成於該支撐層上，且透過蝕刻製程形成一具有高度之基部、一可動部、一固定部以及一中空孔洞，並使該基部內側構成一第一腔室，該中空孔洞形成於該閥層上，並位於與該支撐層之該凸部相對應位置，該中空孔洞與該第一腔室相連通，該可動部之範圍為由該中空孔洞周圍延伸到該基部，該固定部之範圍為該基部向外延伸部分；一第二絕緣層，透過沉積製程形成於該閥層上，並透過蝕刻製程形成具有一高度之支撐部，該支撐部內側構成一第二腔室，該第二腔室透過該閥層之該中空孔洞與該第一腔室相連通；一振動層，透過沉積製程形成於該第二絕緣層上，並透過蝕刻製程形成一懸浮部、一外框部、至少一連接部以及一焊墊部，該至少一連接部形成於該懸浮部及該外框部之間，用以提供彈性支撐該懸浮部之支撐力，且該懸浮部、該外框部以及該至少一連接部之間形成至少一間隙，該焊墊部被蝕刻分隔不與該懸浮部、該外框部及該至少一連接部電性連接；一下電極層，先透過沉積製程形成於該振動層上，再透過蝕刻製程形成於該懸浮部上；一壓電致動層，透過沉積製程及蝕刻製程形成於該下電極層上；一焊墊層，透過沉積製程及蝕刻製程形成於該閥層、該振動層及該壓電致動層上，並於該振動層之焊墊部上形成一參考電極焊墊，於該壓電致動層上形成一上電極焊墊，於該振動層之該外框部一側形成一下電極焊墊，以及於該閥層之該固定部上形成一閥層電極焊墊；以及一遮罩層，透過沉積製程形成於該基板之該第二表面上，且透過蝕刻製程露出該基板之該至少一流道及該容置槽，該容置槽與該支撐層之該導電部電性相連，透過填入高分子導電材至該容置槽內形成一基台電極焊墊，使該基台電極焊墊與該支撐層之該導電部電性連接；其中，提供具有不同相位電荷之驅動電源至該參考電極焊墊、該上電極焊墊、該下電極焊墊、該閥層電極焊墊以及該基台電極焊墊上，以驅動並控制該振動層之該懸浮部產生上下位移，以及該閥層之該可動部與該支撐層之該導電部之間產生相對位移，使流體自該至少一流道吸入，並流至該第一腔室後透過該閥層之該中空孔洞聚集於該第二腔室，最後受擠壓排出以完成流體傳輸。A generalized embodiment of the present invention is a microchannel structure comprising: a substrate having a first surface and a second surface, wherein at least a first pass and a receiving groove are formed through an etching process; and a first insulating layer is transparently deposited The process is formed on the first surface of the substrate, and etches the at least first channel of the substrate; a support layer is formed on the first insulating layer through a deposition process, and a convex portion and a conductive portion are formed through an etching process And a portion of the at least one of the substrates exposed through the etching process; a valve layer formed on the support layer by a deposition process, and forming a base having a height, a movable portion, a fixed portion, and a hollow through an etching process a hole, and forming a first chamber on the inner side of the base, the hollow hole being formed on the valve layer and located at a position corresponding to the convex portion of the support layer, the hollow hole being in communication with the first chamber The movable portion extends from the periphery of the hollow hole to the base portion, the fixing portion ranges from the base portion to the outward extending portion; and a second insulating layer passes through the deposition process Forming a support portion having a height on the valve layer through an etching process, the inside of the support portion forming a second chamber, and the second chamber is connected to the first chamber through the hollow hole of the valve layer a vibrating layer is formed on the second insulating layer through a deposition process, and forms a floating portion, an outer frame portion, at least one connecting portion and a pad portion through an etching process, and the at least one connecting portion is formed in the floating portion Between the portion and the outer frame portion, a supporting force for elastically supporting the floating portion is provided, and at least one gap is formed between the floating portion, the outer frame portion and the at least one connecting portion, and the pad portion is etched and separated Not electrically connected to the floating portion, the outer frame portion and the at least one connecting portion; the lower electrode layer is first formed on the vibration layer through a deposition process, and then formed on the floating portion through an etching process; The movable layer is formed on the lower electrode layer through a deposition process and an etching process; a pad layer is formed on the valve layer, the vibration layer and the piezoelectric actuation layer through a deposition process and an etching process, and the vibration is Layer pad Forming a reference electrode pad, forming an upper electrode pad on the piezoelectric actuation layer, forming a lower electrode pad on a side of the outer frame portion of the vibration layer, and forming on the fixing portion of the valve layer a valve layer electrode pad; and a mask layer formed on the second surface of the substrate through a deposition process, and exposing the at least first channel and the accommodating groove of the substrate through an etching process, the accommodating groove and the accommodating groove The conductive portion of the support layer is electrically connected, and a base electrode pad is formed by filling the polymer conductive material into the accommodating groove, and the base electrode pad is electrically connected to the conductive portion of the support layer. Providing a driving power source having different phase charges to the reference electrode pad, the upper electrode pad, the lower electrode pad, the valve layer electrode pad, and the base electrode pad to drive and control the vibration The floating portion of the layer generates an up-and-down displacement, and a relative displacement between the movable portion of the valve layer and the conductive portion of the support layer causes fluid to be drawn from the at least one of the first-stage channels and flows through the first chamber to pass through The hollow hole of the valve layer It is concentrated in the second chamber and finally squeezed out to complete the fluid transfer.
體現本案特徵與優點的一些典型實施例將在後段的說明中詳細敘述。應理解的是本案能夠在不同的態樣上具有各種的變化，其皆不脫離本案的範圍，且其中的說明及圖示在本質上當作說明之用，而非用以限制本案。Some exemplary embodiments embodying the features and advantages of the present invention are described in detail in the following description. It is to be understood that the present invention is capable of various modifications in various embodiments, and is not intended to limit the scope of the invention.
本案之微流道結構用於輸送流體或氣體，並且增加或是控制流體或氣體的流速。請參閱第1圖，於本案實施例中，微流道結構1包含有：一基板1a、一第一絕緣層1b、一支撐層1c、一閥層1d、一第二絕緣層1e、一振動層1f、一下電極層1g、一壓電致動層1h、一焊墊層1i以及一遮罩層1j。遮罩層1j、基板1a、第一絕緣層1b、支撐層1c、閥層1d、第二絕緣層1e、振動層1f、下電極層1g、壓電致動層1h係依序堆疊結合後形成為一體，其構成如下說明。The microchannel structure of the present invention is used to transport fluids or gases and to increase or control the flow rate of the fluid or gas. Referring to FIG. 1 , in the embodiment of the present invention, the microchannel structure 1 includes: a substrate 1a, a first insulating layer 1b, a supporting layer 1c, a valve layer 1d, a second insulating layer 1e, and a vibration. The layer 1f, the lower electrode layer 1g, a piezoelectric actuation layer 1h, a pad layer 1i, and a mask layer 1j. The mask layer 1j, the substrate 1a, the first insulating layer 1b, the support layer 1c, the valve layer 1d, the second insulating layer 1e, the vibration layer 1f, the lower electrode layer 1g, and the piezoelectric actuation layer 1h are sequentially stacked and combined to form As an integral part, the configuration is as follows.
請參閱第2A圖，於本案實施例中，基板1a為一種多晶矽材料。基板1a具有一第一表面11a以及一相對於第一表面11a之第二表面12a。於本案實施例中，第一絕緣層1b透過一氮化矽材料沉積製程形成於基板1a之第一表面11a之上，沉積製程可為一物理氣相沉積製程(PVD)、一化學氣相沉積製程(CVD)或兩者之組合，但不以此為限。Referring to FIG. 2A, in the embodiment of the present invention, the substrate 1a is a polycrystalline germanium material. The substrate 1a has a first surface 11a and a second surface 12a opposite to the first surface 11a. In the embodiment of the present invention, the first insulating layer 1b is formed on the first surface 11a of the substrate 1a through a tantalum nitride material deposition process, and the deposition process may be a physical vapor deposition process (PVD), a chemical vapor deposition process. Process (CVD) or a combination of both, but not limited to this.
請參閱第2B圖，於本案實施例中，第一絕緣層1b透過一微影蝕刻製程形成至少一第一孔洞11b以及至少一第二孔洞12b。至少一第二孔洞12b圍繞至少一第一孔洞11b而設置。值得注意的是，於本案實施例中，蝕刻製程可為一濕式蝕刻製程、一乾式蝕刻製程或兩者之組合，但不以此為限。Referring to FIG. 2B, in the embodiment of the present invention, the first insulating layer 1b forms at least one first hole 11b and at least one second hole 12b through a lithography process. At least one second hole 12b is disposed around the at least one first hole 11b. It should be noted that, in the embodiment of the present invention, the etching process may be a wet etching process, a dry etching process, or a combination of the two, but not limited thereto.
請參閱第2C圖以及第2D圖，於本案實施例中，支撐層1c透過薄膜沉積製程形成於第一絕緣層1b之上(如第2C圖所示)，並透過微影蝕刻製程定義形成一凸部11c及一導電部12c。導電部12c圍繞於凸部11c外部。支撐層1c透過微影蝕刻製程蝕刻在至少一第二孔洞12b之部分，以定義出完整露出之至少一第二孔洞12b(如第2D圖所示)。Referring to FIG. 2C and FIG. 2D, in the embodiment of the present invention, the support layer 1c is formed on the first insulating layer 1b through a thin film deposition process (as shown in FIG. 2C), and is formed by a lithography process definition. The convex portion 11c and a conductive portion 12c. The conductive portion 12c surrounds the outside of the convex portion 11c. The support layer 1c is etched into the portion of the at least one second hole 12b through a photolithography process to define at least one second hole 12b (shown in FIG. 2D) that is completely exposed.
請參閱第2E圖至第2I圖，於本案實施例中，閥層1d先透過沉積一第一氧化層11d於支撐層1c上，再經平坦化處理(如第2F圖所示)及蝕刻第一錨定區12d(如第2G圖所示)後，於第一氧化層11d上沉積一多晶矽材料所構成。多晶矽材料經過重摻雜後可導電，常用來作為金屬氧化物半導體之閘極，因此足以傳遞適當頻率之訊號。其中平坦化處理可使用化學機械研磨(CMP)、旋塗式玻璃(SOG)或回流(REFLOW)法，以減少第一氧化層11d上產生階梯覆蓋，而有助於第一氧化層11d上進行光阻塗佈及曝光，以及在第一氧化層11d上所沉積材料能夠較為平整地形成。第一錨定區12d之蝕刻深度係至與支撐層1c表面接觸為止，如此在第一錨定區12d生成一基部13d，使閥層1d能夠藉由基部13d與支撐層1c相結合並連接定位。於本案實施例中，第一氧化層11d為氧化矽材質，其厚度為1~5微米(μm)。於其他實施例中，第一氧化層11d也可為磷矽玻璃(PSG)或硼磷矽玻璃(BPSG)材質，但不以此為限。再請參閱第2I圖，於本案實施例中，閥層1d再透過微影蝕刻製程於對應支撐層1c之凸部11c的位置蝕刻形成一中空孔洞14d，藉此閥層1d於中空孔洞14d周圍附近延伸到基部13d之部分定義為一可動部15d，以及閥層1d自基部13d向外延伸部分定義為一固定部16d。Referring to FIGS. 2E to 2I, in the embodiment of the present invention, the valve layer 1d is first deposited on the support layer 1c by depositing a first oxide layer 11d, and then planarized (as shown in FIG. 2F) and etched. After an anchor region 12d (as shown in FIG. 2G), a polycrystalline germanium material is deposited on the first oxide layer 11d. The polycrystalline germanium material is electrically conductive after being heavily doped and is commonly used as a gate of a metal oxide semiconductor, and thus is sufficient to deliver a signal of an appropriate frequency. The planarization treatment may use a chemical mechanical polishing (CMP), a spin-on glass (SOG) or a reflow (REFLOW) method to reduce the occurrence of step coverage on the first oxide layer 11d, and contribute to the first oxide layer 11d. The photoresist coating and exposure, and the material deposited on the first oxide layer 11d can be formed relatively flat. The etching depth of the first anchoring region 12d is brought into contact with the surface of the supporting layer 1c, so that a base portion 13d is formed in the first anchoring region 12d, so that the valve layer 1d can be combined with the supporting layer 1c by the base portion 13d and connected and positioned. . In the embodiment of the present invention, the first oxide layer 11d is made of yttrium oxide and has a thickness of 1 to 5 micrometers (μm). In other embodiments, the first oxide layer 11d may also be a material of a phosphorous bismuth (PSG) or a borophosphorus glass (BPSG), but is not limited thereto. Referring to FIG. 2I again, in the embodiment of the present invention, the valve layer 1d is etched through the lithography process to form a hollow hole 14d at a position corresponding to the convex portion 11c of the supporting layer 1c, whereby the valve layer 1d is surrounded by the hollow hole 14d. A portion extending to the base portion 13d in the vicinity is defined as a movable portion 15d, and an outwardly extending portion of the valve layer 1d from the base portion 13d is defined as a fixed portion 16d.
請參閱第2J圖至第2N圖，於本案實施例中，第二絕緣層1e之形成係先透過沉積一第二氧化層11e在閥層1d上，再經平坦化處理(如第2K圖所示)及蝕刻出一第二錨定區12e(如第2L圖所示)後，於第二氧化層11e上沉積一氮化矽材料所構成。其中平坦化處理可使用化學機械研磨(CMP)、旋塗式玻璃(SOG)或回流(REFLOW)法，以減少第二氧化層11e上產生階梯覆蓋，而有助於第二氧化層11e上進行光阻塗佈及曝光，以及在第二氧化層11e上所沉積材料能夠較為平整地形成。第二錨定區12e之蝕刻深度係至與閥層1d表面接觸為止，如此在第二錨定區12e生成一支撐部13e，使第二絕緣層1e能夠藉由支撐部13e與閥層1d相結合並連接定位。於本案實施例中，第二氧化層11e為氧化矽材質，其厚度為1~5微米(μm)。於其他實施例中，第二氧化層11e也可為磷矽玻璃(PSG)或硼磷矽玻璃(BPSG)材質，但不以此為限。再參閱第2N圖，於本案實施例中，再透過微影蝕刻製程於第二絕緣層1e形成貫穿至第二氧化層11e的振動區14e及焊墊區15e。Referring to FIG. 2J to FIG. 2N, in the embodiment of the present invention, the second insulating layer 1e is formed by depositing a second oxide layer 11e on the valve layer 1d and then planarizing (as shown in FIG. 2K). And etching a second anchoring region 12e (as shown in FIG. 2L), and depositing a tantalum nitride material on the second oxide layer 11e. The planarization treatment may use a chemical mechanical polishing (CMP), a spin-on glass (SOG) or a reflow (REFLOW) method to reduce the occurrence of step coverage on the second oxide layer 11e, and contribute to the second oxide layer 11e. The photoresist coating and exposure, and the material deposited on the second oxide layer 11e can be formed relatively flat. The etching depth of the second anchoring region 12e is brought into contact with the surface of the valve layer 1d, so that a supporting portion 13e is formed in the second anchoring region 12e, so that the second insulating layer 1e can be connected to the valve layer 1d by the supporting portion 13e. Combine and connect positioning. In the embodiment of the present invention, the second oxide layer 11e is made of yttrium oxide and has a thickness of 1 to 5 micrometers (μm). In other embodiments, the second oxide layer 11e may also be a material of a phosphorous-glass (PSG) or a borophosphorus glass (BPSG), but is not limited thereto. Referring to FIG. 2N again, in the embodiment of the present invention, the vibration region 14e and the pad region 15e penetrating through the second oxide layer 11e are formed in the second insulating layer 1e through the lithography process.
請參閱第2O圖至第2P圖，於本案實施例中，振動層1f透過一多晶矽材料沉積在第二絕緣層1e上所構成。多晶矽材料經過重摻雜後可導電，常用來作為金屬氧化物半導體之閘極，因此足以傳遞適當頻率之訊號。下電極層1g透過一金屬材料沉積在振動層1f上所構成。壓電致動層1h透過一壓電材料沉積在下電極層1g上所構成(如第2O圖所示)。本案實施例中，振動層1f厚度為1~5微米(μm)。於其他實施例中，壓電致動層1h亦可透過溶膠-凝膠法(sol-gel)製程製出，但不以此為限。再參閱第2P圖，於本案實施例中，透過微影蝕刻製程蝕刻下電極層1g以及壓電致動層1h之外側部分，藉以定義出壓電致動層1h作為一驅動體以及下電極層1g作為一下電極。Referring to FIGS. 2O to 2P, in the embodiment of the present invention, the vibration layer 1f is formed by depositing a polysilicon material on the second insulating layer 1e. The polycrystalline germanium material is electrically conductive after being heavily doped and is commonly used as a gate of a metal oxide semiconductor, and thus is sufficient to deliver a signal of an appropriate frequency. The lower electrode layer 1g is formed by depositing a metal material on the vibration layer 1f. The piezoelectric actuator layer 1h is formed by depositing a piezoelectric material on the lower electrode layer 1g (as shown in FIG. 2O). In the embodiment of the present invention, the thickness of the vibration layer 1f is 1 to 5 micrometers (μm). In other embodiments, the piezoelectric actuation layer 1h can also be produced by a sol-gel process, but is not limited thereto. Referring to FIG. 2P again, in the embodiment of the present invention, the lower electrode layer 1g and the outer side portion of the piezoelectric actuator layer 1h are etched by a photolithography etching process, thereby defining the piezoelectric actuator layer 1h as a driving body and a lower electrode layer. 1g is used as the lower electrode.
請參閱第2Q圖、第3A圖以及第3B圖，於本案實施例中，透過微影蝕刻製程蝕刻振動層1f以形成一懸浮部11f、一外框部12f以及至少一連接部13f。懸浮部11f、外框部12f及至少一連接部13f之間形成至少一間隙14f。於本案實施例中，振動層1f在至少一間隙14f之蝕刻深度為蝕刻至與第二氧化層11e表面接觸為止。於本案實施例中，至少一連接部13f形成於懸浮部11f及外框部12f之間，連接部13f的數量為8個，用以提供彈性支撐懸浮部11f的支撐力，但不以此為限。值得注意的是，於本案實施例中，懸浮部11f為一正方形形態(如圖3A所示)，但不以此為限。於其他實施例中，懸浮部11f的形態可依實際需求而變化，如：圓形(如圖3B所示)。值得注意的是，於本案實施例中，振動層1f還透過微影蝕刻製程在振動層1f之一側蝕刻，以定義出一第三錨定區15f及一焊墊部16f，並且第三錨定區15f之蝕刻深度為蝕刻至與第二絕緣層1e表面接觸為止，使得焊墊部16f不與振動層1f之懸浮部11f、外框部12f及至少一連接部13f導電連接。Referring to FIG. 2Q, FIG. 3A, and FIG. 3B, in the embodiment of the present invention, the vibration layer 1f is etched by a photolithography process to form a floating portion 11f, an outer frame portion 12f, and at least one connecting portion 13f. At least one gap 14f is formed between the floating portion 11f, the outer frame portion 12f, and the at least one connecting portion 13f. In the embodiment of the present invention, the etching depth of the vibration layer 1f at least one of the gaps 14f is etched until it comes into contact with the surface of the second oxide layer 11e. In the embodiment of the present invention, at least one connecting portion 13f is formed between the floating portion 11f and the outer frame portion 12f, and the number of the connecting portions 13f is eight to provide a supporting force for elastically supporting the floating portion 11f, but not limit. It should be noted that, in the embodiment of the present invention, the floating portion 11f is in a square shape (as shown in FIG. 3A), but is not limited thereto. In other embodiments, the shape of the floating portion 11f may be changed according to actual needs, such as a circular shape (as shown in FIG. 3B). It should be noted that, in the embodiment of the present invention, the vibration layer 1f is also etched on one side of the vibration layer 1f through a lithography process to define a third anchoring region 15f and a pad portion 16f, and a third anchor. The etching depth of the fixed region 15f is etched until it comes into contact with the surface of the second insulating layer 1e, so that the pad portion 16f is not electrically connected to the floating portion 11f of the vibration layer 1f, the outer frame portion 12f, and the at least one connecting portion 13f.
請參閱第2R圖及第2S圖，於本案實施例中，提供一光阻層M形成於壓電致動層1h以及振動層1f上，再透過微影蝕刻製程蝕刻光阻層M，以形成複數個凹陷區M1、M2、M3、M4。凹陷區M1之蝕刻深度為蝕刻至閥層1d之固定部16d之表面接觸為止，凹陷區M2之蝕刻深度為蝕刻至振動層1f之外框部12f表面接觸為止，凹陷區M3之蝕刻深度為蝕刻至與壓電致動層1h表面接觸為止，凹陷區M4之蝕刻深度為蝕刻至焊墊部16f表面接觸為止。於本案實施例中，光阻層M係為一負光阻，但不以此為限。Referring to FIG. 2R and FIG. 2S, in the embodiment of the present invention, a photoresist layer M is formed on the piezoelectric actuation layer 1h and the vibration layer 1f, and then the photoresist layer M is etched through the lithography process to form the photoresist layer M. A plurality of recessed areas M1, M2, M3, M4. The etched depth of the recessed region M1 is the surface contact of the fixed portion 16d etched to the valve layer 1d. The etched depth of the recessed region M2 is etched to the surface of the frame portion 12f outside the vibration layer 1f, and the etched depth of the recessed region M3 is etched. Until the surface of the piezoelectric actuator layer 1h is in contact, the etching depth of the recessed region M4 is etched until the surface of the pad portion 16f contacts. In the embodiment of the present invention, the photoresist layer M is a negative photoresist, but is not limited thereto.
請參閱第2T圖至第2U圖，於本案實施例中，透過沉積一金屬材料於閥層1d之固定部16d、振動層1f之外框部12f、壓電致動層1h、焊墊部16f以及剩餘之光阻層M上以形成一焊墊層1i。請再參閱第2U圖，於本案實施例中，透過一剝離（Lift-Off）製程將光阻層M移除，藉以定義出焊墊層1i之一參考電極焊墊11i、一上電極焊墊12i、一下電極焊墊13i以及一閥層電極焊墊14i。閥層電極焊墊14i位於閥層1d之固定部16d上；下電極焊墊13i位於靠近閥層電極焊墊14i之振動層1f之外框部12f之一側；上電極焊墊12i位於壓電致動層1h上；以及參考電極焊墊11i位於振動層1f之焊墊部16f上，如此，壓電致動層1h形成於上電極焊墊12i以及下電極層1g之間，下電極焊墊13i透過振動層1f與下電極層1g電性相連通。值得注意的是，第三錨定區15f的設置，使得參考電極焊墊11i透過第二絕緣層1e的隔離而與下電極層1g以及下電極焊墊13i不電性連通。上述焊墊層1i之參考電極焊墊11i、上電極焊墊12i、下電極焊墊13i以及閥層電極焊墊14i之位置及相對層別結構可依照需求配置，在此僅出示打線之可行性。Referring to FIGS. 2T to 2U, in the embodiment of the present invention, a metal material is deposited on the fixing portion 16d of the valve layer 1d, the frame portion 12f outside the vibration layer 1f, the piezoelectric actuation layer 1h, and the pad portion 16f. And the remaining photoresist layer M to form a pad layer 1i. Referring to FIG. 2U again, in the embodiment of the present invention, the photoresist layer M is removed through a lift-off process to define a reference electrode pad 11i and an upper electrode pad of the pad layer 1i. 12i, a lower electrode pad 13i and a valve layer electrode pad 14i. The valve layer electrode pad 14i is located on the fixed portion 16d of the valve layer 1d; the lower electrode pad 13i is located on one side of the frame portion 12f adjacent to the vibration layer 1f of the valve layer electrode pad 14i; the upper electrode pad 12i is located at the piezoelectric layer On the actuation layer 1h; and the reference electrode pad 11i is located on the pad portion 16f of the vibration layer 1f, such that the piezoelectric actuation layer 1h is formed between the upper electrode pad 12i and the lower electrode layer 1g, and the lower electrode pad 13i is electrically connected to the lower electrode layer 1g through the vibration layer 1f. It is to be noted that the third anchoring region 15f is disposed such that the reference electrode pad 11i is in non-electrical communication with the lower electrode layer 1g and the lower electrode pad 13i through the isolation of the second insulating layer 1e. The position and relative layer structure of the reference electrode pad 11i, the upper electrode pad 12i, the lower electrode pad 13i, and the valve layer electrode pad 14i of the pad layer 1i can be configured according to requirements, and only the feasibility of wire bonding is shown here. .
請參閱第2V圖以及第2W圖，於本案實施例中，透過沉積一氧化矽材料於基板1a之第二表面12a上以構成一遮罩層1j，再透過微影蝕刻製程對遮罩層1j蝕刻以定義出一導電區11j以及至少一流道區12j。遮罩層1j之至少一流道區12j與第一絕緣層1b之至少一第二孔洞12b的位置相對應，且導電區11j及至少一流道區12j之深度為蝕刻至基板1a之第二表面12a接觸為止。Referring to FIG. 2V and FIG. 2W, in the embodiment of the present invention, a ruthenium oxide material is deposited on the second surface 12a of the substrate 1a to form a mask layer 1j, and then the lithography process is applied to the mask layer 1j. Etching to define a conductive region 11j and at least a preferred track region 12j. The at least one of the first track regions 12j of the mask layer 1j corresponds to the position of the at least one second hole 12b of the first insulating layer 1b, and the depth of the conductive region 11j and at least the first track region 12j is etched to the second surface 12a of the substrate 1a. Contact until now.
請參閱第2X圖以及第3C圖，於本案實施例中，再透過微影蝕刻製程在遮罩層1j之導電區11j以及至少一流道區12j之區域蝕刻，蝕刻深度為自基板1a的第二表面12a至第一絕緣層1bj接觸為止，使基板1a蝕刻定義出至少一流道13a以及一容置槽14a。於本案實施例中，流道13a的數量為4個，但不以此為限。於本案實施例中，4個流道13a以等角距環繞容置槽14a而設置(如第3C圖所示)，但不以此為限。於本案實施例中，容置槽14a具有一環狀形態，但不以此為限。請參閱第2Y圖，於本案實施例中，透過將一高分子導電材填入基板1a之容置槽14a內以形成一基台電極焊墊1k，如此基台電極焊墊1k可與支撐層1c之導電部12c電性連接。值得注意的是，於其他實施例中，基台電極焊墊1k可使用任何導電材製出，或以微電鑄的方式製出，但不以此為限，而基台電極焊墊1k之位置亦可依不同需求而變化。Referring to FIG. 2X and FIG. 3C, in the embodiment of the present invention, etching is performed in the region of the conductive region 11j of the mask layer 1j and at least the region of the first-pass region 12j through a photolithography process, and the etching depth is the second from the substrate 1a. Before the surface 12a is in contact with the first insulating layer 1bj, the substrate 1a is etched to define at least the first pass 13a and a receiving groove 14a. In the embodiment of the present invention, the number of the flow channels 13a is four, but not limited thereto. In the embodiment of the present invention, the four flow channels 13a are disposed at equal angular intervals around the accommodating groove 14a (as shown in FIG. 3C), but are not limited thereto. In the embodiment of the present invention, the accommodating groove 14a has an annular shape, but is not limited thereto. Referring to FIG. 2Y, in the embodiment of the present invention, a polymer conductive material is filled into the receiving groove 14a of the substrate 1a to form an abutment electrode pad 1k, such that the base electrode pad 1k can be combined with the supporting layer. The conductive portion 12c of 1c is electrically connected. It should be noted that in other embodiments, the base electrode pad 1k can be made of any conductive material or micro-electroformed, but not limited thereto, and the base electrode pad 1k The location can also vary according to different needs.
請參閱第2Z圖，於本案實施例中，再經蝕刻製程，將閥層1d之基部13d內側區域之第一氧化層11d釋放移除以定義出一第一腔室R1，以及將第二絕緣層1e之支撐部13e內側區域之第二氧化層11e釋放移除以定義出一第二腔室R2。亦即，透過蝕刻液由基板1a之至少一流道13a流入閥層1d之基部13d內側區域之第一氧化層11d，進而蝕刻並釋放移除第一氧化層11d以定義出第一腔室R1；透過蝕刻液由至少一間隙14f流入第二絕緣層1e之支撐部13e內側區域之第二氧化層11e，進而蝕刻並釋放移除第二氧化層11e以定義出第二腔室R2，並使位於中空孔洞14d處之第二氧化層11e也被釋放移除，讓中空孔洞14d得與第二腔室R2以及第一腔室R1相連通，也使第一腔室R1連通基板1a之至少一流道13a。第一腔室R1於閥層1d之可動部15d與支撐層1c之間具有一深度，第一腔室R1深度為1~5微米(μm)，但不以此為限，以及第二腔室R2於閥層1d之可動部15d與振動層1f之懸浮部11f之間具一深度，第二腔室R2深度為1~5微米(μm)，但不以此為限。又，值得注意的是，本案微流道結構1在閥層1d設置基部13d以及於第二絕緣層1e設置支撐部13e，係用以限制第一氧化層11d及第二氧化層11e之氧化蝕刻的範圍。在將光阻層M移除的剝離（Lift-Off）製程中，因微流道結構1為微型化結構，在開孔較少及較小的情況下，蝕刻時間被迫拉長，如此，藉由閥層1d之基部13d以及第二絕緣層1e之支撐部13e之阻隔，可避免第一腔室R1及第二腔室R2發生側蝕之情況，以形成尺寸穩定之第一腔室R1及第二腔室R2，極具進步效益。Referring to FIG. 2Z, in the embodiment of the present invention, the first oxide layer 11d in the inner region of the base portion 13d of the valve layer 1d is released and removed by an etching process to define a first chamber R1, and a second insulation. The second oxide layer 11e in the inner region of the support portion 13e of the layer 1e is released and removed to define a second chamber R2. That is, through the etching liquid from the at least the first channel 13a of the substrate 1a into the first oxide layer 11d in the inner region of the base portion 13d of the valve layer 1d, thereby etching and releasing the first oxide layer 11d to define the first chamber R1; Passing through the etching solution from at least one gap 14f into the second oxide layer 11e in the inner region of the support portion 13e of the second insulating layer 1e, thereby etching and releasing the second oxide layer 11e to define the second chamber R2, and positioning The second oxide layer 11e at the hollow hole 14d is also released and removed, so that the hollow hole 14d is connected to the second chamber R2 and the first chamber R1, and also allows the first chamber R1 to communicate with at least the first channel of the substrate 1a. 13a. The first chamber R1 has a depth between the movable portion 15d of the valve layer 1d and the support layer 1c, and the first chamber R1 has a depth of 1 to 5 micrometers (μm), but not limited thereto, and the second chamber R2 has a depth between the movable portion 15d of the valve layer 1d and the floating portion 11f of the vibration layer 1f, and the second chamber R2 has a depth of 1 to 5 micrometers (μm), but is not limited thereto. Moreover, it is noted that the microchannel structure 1 of the present invention is provided with a base portion 13d in the valve layer 1d and a support portion 13e on the second insulating layer 1e for limiting the oxidation etching of the first oxide layer 11d and the second oxide layer 11e. The scope. In the lift-off process in which the photoresist layer M is removed, since the micro-channel structure 1 is a miniaturized structure, the etching time is forced to be elongated in the case where the opening is small and small, and thus, By the barrier of the base portion 13d of the valve layer 1d and the support portion 13e of the second insulating layer 1e, the side etching of the first chamber R1 and the second chamber R2 can be avoided to form the dimensionally stable first chamber R1. And the second chamber R2 is very promising.
由上述說明可知，微流道結構1係由遮罩層1j、基板1a、第一絕緣層1b、支撐層1c、閥層1d、第二絕緣層1e、振動層1f、下電極層1g、壓電致動層1h及焊墊層1i依序堆疊結合後形成為一體之微型化結構，接著就微流道結構1之作動方式做詳細說明如下。As apparent from the above description, the microchannel structure 1 is composed of the mask layer 1j, the substrate 1a, the first insulating layer 1b, the support layer 1c, the valve layer 1d, the second insulating layer 1e, the vibration layer 1f, the lower electrode layer 1g, and the pressure. The electrically actuated layer 1h and the pad layer 1i are sequentially stacked and combined to form an integrated miniaturized structure, and then the operation mode of the microchannel structure 1 will be described in detail as follows.
請先參閱第1圖及第4A圖，於本案實施例中，於上電極焊墊12i連接一線路(未圖示，可為習知打線連接方式之線路)形成一第一迴路L1，而下電極焊墊13i連接一線路(未圖示，可為習知打線連接方式之線路)形成一第二迴路L2，於閥層電極焊墊14i與參考電極焊墊11i連接一線路(未圖示，可為習知打線連接方式之線路)形成一第三迴路L3，於基台電極焊墊1k與參考電極焊墊11i連接一線路(未圖示，可為習知打線連接方式之線路)形成一第四迴路L4。施加具有不同相位之驅動電源於第一迴路L1、第二迴路L2、第三迴路L3以及第四迴路L4，利用電荷同性相斥、異性相吸原理，使得振動層1f之懸浮部11f、閥層1d之可動部15d以及基板1a之間作相對運動，進而達到流體傳輸。值得注意的是，由於第一腔室R1以及第二腔室R2的深度極小，因此使得基板1a、閥層1d及振動層1f之間的靜電力更大，藉此，微流道結構1不僅可靠控制閥層1d及振動層1f之共振頻率來傳輸流體，並可配合賦予基板1a以及閥層1d一電荷電性來操作作動，更容易實現微型化微流道結構1之實施可行性及傳輸效率。Please refer to FIG. 1 and FIG. 4A. In the embodiment of the present invention, a circuit (not shown, which can be a conventional wire bonding method) is connected to the upper electrode pad 12i to form a first loop L1. The electrode pad 13i is connected to a line (not shown, which can be a conventional wire bonding method) to form a second circuit L2, and a circuit is connected between the valve layer electrode pad 14i and the reference electrode pad 11i (not shown, A third circuit L3 can be formed for the conventional wire bonding method, and a circuit (not shown, which can be a conventional wire bonding method) is formed on the base electrode pad 1k and the reference electrode pad 11i. The fourth loop L4. A driving power source having different phases is applied to the first circuit L1, the second circuit L2, the third circuit L3, and the fourth circuit L4, and the floating portion 11f and the valve layer of the vibration layer 1f are made by the principle of charge isotropic repulsion and the opposite phase attracting. The 1d movable portion 15d and the substrate 1a are moved relative to each other to achieve fluid transfer. It is to be noted that since the depths of the first chamber R1 and the second chamber R2 are extremely small, the electrostatic force between the substrate 1a, the valve layer 1d, and the vibration layer 1f is made larger, whereby the microchannel structure 1 is not only The resonant frequency of the valve layer 1d and the vibration layer 1f is reliably controlled to transmit the fluid, and the charging operation of the substrate 1a and the valve layer 1d can be combined to operate, and the feasibility and transmission of the miniaturized microchannel structure 1 can be easily realized. effectiveness.
請參閱第4A圖及第4B圖，於本案實施例中，微流道結構1的具體作動方式，係首先施加正電壓給第一迴路L1，負電壓給第二迴路L2，使得壓電致動層1h帶動振動層1f之懸浮部11f朝向遠離基板1a的方向位移，藉此，外部流體(例如氣體或液體)由至少一流道13a被吸入至微流道結構1內，而進入微流道結構1內的流體依序通過第一腔室R1及中空孔洞14d，再匯集於第二腔室R2內。再請參閱第A圖以及第4C圖，此時再施加正電壓給第三迴路L3以及第四迴路L4，使得閥層1d之可動部15d與支撐層1c之導電部12c具有相同電荷，讓可動部15d與導電部12c構成電荷同性相斥之相對運動，亦即閥層1d之可動部15d朝向遠離基板1a的方向位移。如同圖所示，振動層1f之懸浮部11f與閥層1d之可動部15d皆往上位移，如此外部流體持續由至少一流道13a被吸入微流道結構1內，並且匯集於第二腔室R2內的部分流體得以被擠壓往第二腔室R2的周圍部分移動。最後再請參閱第4A圖以及第4D圖，接著轉換第一迴路L1、第二迴路L2、第三迴路L3以及第四迴路L4之電性，施加負電壓給第一迴路L1，以及施加正電壓給第二迴路L2，如此振動層1f之懸浮部11f朝向靠近基板1a的方向位移，同時施加正電壓給第三迴路L3，施加負電壓給第四迴路L4，使得閥層1d之可動部15d與支撐層1c之導電部12c具有不相同電荷，讓可動部15d與導電部12c構成電荷異性相吸之相對運動，亦即閥層1d之可動部15d朝向靠近基板1a的方向位移。如同圖所示，振動層1f之懸浮部11f與閥層1d之可動部15d皆往下位移，如此閥層1d之可動部15d與導電部12c相吸靠近，且抵靠支撐層1c之凸部11c，因此閥層1d之中空孔洞14d被凸部11c所封閉，使由至少一流道13a被吸入微流道結構1內流體無法進入第二腔室R2內，同時第二腔室R2內體積受振動層1f之懸浮部11f壓縮，致使匯集於第二腔室R2內的流體得以由至少一間隙14f排出於微流道結構1外，完成一微流道結構1之流體傳輸。由上述說明微流道結構1單一傳輸流體的操作方式，再透過不斷地重複上述第4B圖至第4D圖所示之作動步驟，即可使微流道結構1能夠連續使流體高速流動，達到微流道結構1持續傳輸流體的操作。Referring to FIG. 4A and FIG. 4B, in the embodiment of the present invention, the specific operation mode of the microchannel structure 1 is to first apply a positive voltage to the first loop L1 and a negative voltage to the second loop L2, so that the piezoelectric actuator is actuated. The layer 1h drives the suspension portion 11f of the vibration layer 1f to be displaced away from the substrate 1a, whereby an external fluid (for example, a gas or a liquid) is sucked into the microchannel structure 1 by at least the main channel 13a, and enters the microchannel structure. The fluid in 1 passes through the first chamber R1 and the hollow hole 14d in sequence, and is collected in the second chamber R2. Referring to FIG. A and FIG. 4C again, a positive voltage is applied to the third loop L3 and the fourth loop L4 at this time, so that the movable portion 15d of the valve layer 1d and the conductive portion 12c of the support layer 1c have the same electric charge, so that the movable portion is movable. The portion 15d and the conductive portion 12c constitute a relative movement of the charge isotropic, that is, the movable portion 15d of the valve layer 1d is displaced in a direction away from the substrate 1a. As shown in the figure, the floating portion 11f of the vibration layer 1f and the movable portion 15d of the valve layer 1d are both displaced upward, so that the external fluid is continuously sucked into the micro-channel structure 1 by at least the first-passage 13a, and is collected in the second chamber. A portion of the fluid within R2 is forced to move toward the surrounding portion of the second chamber R2. Finally, please refer to FIG. 4A and FIG. 4D, and then convert the electrical properties of the first loop L1, the second loop L2, the third loop L3, and the fourth loop L4, apply a negative voltage to the first loop L1, and apply a positive voltage. To the second loop L2, the floating portion 11f of the vibrating layer 1f is displaced toward the substrate 1a while a positive voltage is applied to the third loop L3, and a negative voltage is applied to the fourth loop L4, so that the movable portion 15d of the valve layer 1d is The conductive portion 12c of the support layer 1c has a different electric charge, and the movable portion 15d and the conductive portion 12c constitute a relative movement of the opposite polarity of the charge, that is, the movable portion 15d of the valve layer 1d is displaced toward the substrate 1a. As shown in the figure, the floating portion 11f of the vibration layer 1f and the movable portion 15d of the valve layer 1d are all displaced downward, so that the movable portion 15d of the valve layer 1d is attracted to the conductive portion 12c and abuts against the convex portion of the support layer 1c. 11c, therefore, the hollow hole 14d of the valve layer 1d is closed by the convex portion 11c, so that the fluid sucked into the micro-channel structure 1 by at least the first-passage passage 13a cannot enter the second chamber R2, and the volume in the second chamber R2 is affected. The floating portion 11f of the vibrating layer 1f is compressed, so that the fluid collected in the second chamber R2 is discharged from the microchannel structure 1 by at least one gap 14f, and the fluid transfer of the microchannel structure 1 is completed. By the above-described operation mode of the single-transport fluid of the micro-channel structure 1, the operation of the micro-channel structure 1 can be continuously performed at a high-speed flow by continuously repeating the operation steps shown in FIGS. 4B to 4D. The microchannel structure 1 continues to transport fluids.
值得注意的是，由上述說明可知本案微流道結構1之結構及作動方式，於本案實施例中，支撐層1c之凸部11c的設置，在閥層1d之可動部15d朝向基板1a位移時，可貼抵於支撐層1c之凸部11c，藉此確保中空孔洞14d不與第一腔室R1及至少一流道13a相連通，以阻隔第一腔室R1及第二腔室R2之流體流通，如此更有利應用於傳輸低密度流體。在其他實施例中，支撐層1c也可不具有凸部11c來實施微流道結構1傳輸流體的操作。又，於本案實施例中，支撐層1c之導電部12c圍繞於凸部11c外部之設置，也可以使閥層1d之可動部15d與導電部12c構成電荷異性相吸之相對運動時，避免與可動部15d之前端接觸，以免造成短路，且讓可動部15d之前端容易貼抵於支撐層1c之凸部11c，以封閉閥層1d之中空孔洞14d。此外，於本案實施例中，閥層1d平坦化後，可施加表面處理，藉施打電漿或塗抹高分子材料等方法降低表面的毛細力 (Capillary Force)，改善懸浮結構之沾黏問題(Stiction)，使閥層1d容易在第一腔室R1及第二腔室R2之間位移。It should be noted that the above description shows the structure and the operation mode of the microchannel structure 1 in the present embodiment. In the embodiment of the present invention, the convex portion 11c of the support layer 1c is disposed when the movable portion 15d of the valve layer 1d is displaced toward the substrate 1a. The protrusion 11c of the support layer 1c can be adhered to ensure that the hollow hole 14d does not communicate with the first chamber R1 and at least the first channel 13a to block the fluid circulation of the first chamber R1 and the second chamber R2. This is more advantageous for the transfer of low density fluids. In other embodiments, the support layer 1c may also have no protrusions 11c to perform the operation of the microchannel structure 1 to transport fluid. Moreover, in the embodiment of the present invention, the conductive portion 12c of the support layer 1c is disposed around the outside of the convex portion 11c, and the movable portion 15d of the valve layer 1d and the conductive portion 12c may form a relative movement of the opposite polarity of the charge, thereby avoiding The front end of the movable portion 15d is in contact with each other so as not to cause a short circuit, and the front end of the movable portion 15d is easily attached to the convex portion 11c of the support layer 1c to close the hollow hole 14d of the valve layer 1d. In addition, in the embodiment of the present invention, after the valve layer 1d is planarized, a surface treatment may be applied, and the surface capillary force is reduced by applying plasma or polymer material to improve the adhesion of the suspension structure (Stiction). The valve layer 1d is easily displaced between the first chamber R1 and the second chamber R2.
本案提供一微流道結構，主要以半導體製程來完成的微流道結構結構，並且藉由施加不同相位電荷之驅動電源於壓電致動層之上下、閥層以及基板之基台電極焊墊，利用電荷同性相斥、異性相吸原理，使得振動層之懸浮部、閥層之可動部以及基板之間作相對運動，進而達到流體傳輸。如此，微型化流道結構能夠在極淺之腔室結構中克服靜電力，達到傳輸流體之實施可行性及在極微型化結構中產生極大的傳輸效率，極具產業之利用價值，爰依法提出申請。The present invention provides a micro-channel structure, a micro-channel structure mainly completed by a semiconductor process, and a base electrode pad for the upper and lower layers of the piezoelectric actuation layer, the valve layer and the substrate by applying a driving power of different phase charges. The charge isotropic repulsion and the principle of opposite-phase attraction are used to make the suspension of the vibration layer, the movable portion of the valve layer and the substrate move relative to each other, thereby achieving fluid transmission. In this way, the miniaturized flow channel structure can overcome the electrostatic force in the extremely shallow chamber structure, achieve the feasibility of the transmission fluid and generate great transmission efficiency in the extremely miniaturized structure, which is extremely valuable for the industry, and is proposed according to law. Application.
本案得由熟知此技術之人士任施匠思而為諸般修飾，然皆不脫如附申請專利範圍所欲保護者。This case has been modified by people who are familiar with the technology, but it is not intended to be protected by the scope of the patent application.
1‧‧‧微流道結構1‧‧‧Microchannel structure
1a‧‧‧基板 1a‧‧‧Substrate
11a‧‧‧第一表面 11a‧‧‧ first surface
12a‧‧‧第二表面 12a‧‧‧second surface
13a‧‧‧流道 13a‧‧‧ runner
14a‧‧‧容置槽 14a‧‧‧ accommodating slots
1b‧‧‧第一絕緣層 1b‧‧‧first insulation
11b‧‧‧第一孔洞 11b‧‧‧ first hole
12b‧‧‧第二孔洞 12b‧‧‧Second hole
1c‧‧‧支撐層 1c‧‧‧ support layer
11c‧‧‧凸部 11c‧‧‧ convex
12c‧‧‧導電部 12c‧‧‧Electrical Department
1d‧‧‧閥層 1d‧‧‧ valve layer
11d‧‧‧第一氧化層 11d‧‧‧First oxide layer
12d‧‧‧第一錨定區 12d‧‧‧First anchor zone
13d‧‧‧基部 13d‧‧‧ base
14d‧‧‧中空孔洞 14d‧‧‧ hollow holes
15d‧‧‧可動部 15d‧‧‧movable department
16d‧‧‧固定部 16d‧‧‧Fixed Department
1e‧‧‧第二絕緣層 1e‧‧‧second insulation
11e‧‧‧第二氧化層 11e‧‧‧Second oxide layer
12e‧‧‧第二錨定區 12e‧‧‧Second anchor zone
13e‧‧‧支撐部 13e‧‧‧Support
14e‧‧‧振動區 14e‧‧‧Vibration zone
15e‧‧‧焊墊區 15e‧‧‧pad area
1f‧‧‧振動層 1f‧‧‧vibration layer
11f‧‧‧懸浮部 11f‧‧‧Floating Department
12f‧‧‧外框部 12f‧‧‧Outer frame
13f‧‧‧連接部 13f‧‧‧Connecting Department
14f‧‧‧間隙 14f‧‧‧ gap
15f‧‧‧第三錨定區 15f‧‧‧ third anchor zone
16f‧‧‧焊墊部 16f‧‧‧pad parts
1g‧‧‧下電極層 1g‧‧‧ lower electrode layer
1h‧‧‧壓電致動層 1h‧‧‧ Piezoelectric actuation layer
1i‧‧‧焊墊層 1i‧‧‧pad layer
11i‧‧‧參考電極焊墊 11i‧‧‧reference electrode pad
12i‧‧‧上電極焊墊 12i‧‧‧Upper electrode pad
13i‧‧‧下電極焊墊 13i‧‧‧lower electrode pad
14i‧‧‧閥層電極焊墊 14i‧‧‧Valve Electrode Pads
1j‧‧‧遮罩層 1j‧‧‧ mask layer
11j‧‧‧導電區 11j‧‧‧ conductive area
12j‧‧‧流道區 12j‧‧‧ runner area
1k‧‧‧基台電極焊墊 1k‧‧‧Base electrode pad
R1‧‧‧第一腔室 R1‧‧‧ first chamber
R2‧‧‧第二腔室 R2‧‧‧ second chamber
L1‧‧‧第一迴路 L1‧‧‧ first circuit
L2‧‧‧第二迴路 L2‧‧‧second loop
L3‧‧‧第三迴路 L3‧‧‧ third circuit
M‧‧‧光阻層 M‧‧‧ photoresist layer
M1、M2、M3、M4‧‧‧凹陷區 M1, M2, M3, M4‧‧‧ recessed area
第1圖為本案微流道結構之剖面示意圖。 第2A圖至第2Z圖為本案微流道結構之製造步驟分解示意圖。 第3A圖為本案微流道結構之振動層之俯視示意圖。 第3B圖為本案微流道結構之振動層之其他態樣。 第3C圖為本案微流道結構之基板之俯視示意圖。 第4A圖為本案微流道結構之驅動電荷示意圖。 第4B圖至第4D圖為本案微流道結構之作動示意圖。Figure 1 is a schematic cross-sectional view of the microchannel structure of the present invention. 2A to 2Z are schematic exploded views of the manufacturing steps of the microchannel structure of the present invention. Figure 3A is a top plan view of the vibration layer of the microchannel structure of the present invention. Fig. 3B is another aspect of the vibration layer of the microchannel structure of the present invention. FIG. 3C is a schematic top view of the substrate of the micro flow channel structure of the present invention. Fig. 4A is a schematic diagram showing the driving charge of the microchannel structure of the present invention. 4B to 4D are schematic views of the operation of the microchannel structure of the present invention.
Claims (13)
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| TW107215170U TWM575806U (en) | 2018-11-07 | 2018-11-07 | Micro channel structure |
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| TW107215170U TWM575806U (en) | 2018-11-07 | 2018-11-07 | Micro channel structure |
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| TWM575806U true TWM575806U (en) | 2019-03-21 |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI695934B (en) * | 2019-03-29 | 2020-06-11 | 研能科技股份有限公司 | Micro-electromechanical system pump |
| CN111747376A (en) * | 2019-03-29 | 2020-10-09 | 研能科技股份有限公司 | Method for manufacturing micro-fluid actuator module |
| CN111750142A (en) * | 2019-03-29 | 2020-10-09 | 研能科技股份有限公司 | Microfluidic actuator module |
| TWI707821B (en) * | 2019-11-18 | 2020-10-21 | 研能科技股份有限公司 | Miniature fluid actuator |
| CN112808330A (en) * | 2019-11-18 | 2021-05-18 | 研能科技股份有限公司 | Method for manufacturing micro-fluid actuator |
| CN112814878A (en) * | 2019-11-18 | 2021-05-18 | 研能科技股份有限公司 | Micro fluid actuator |
| CN113493185A (en) * | 2020-03-19 | 2021-10-12 | 研能科技股份有限公司 | Method for manufacturing micro-fluid actuator |
| US11905168B2 (en) | 2019-11-18 | 2024-02-20 | Microjet Technology Co., Ltd. | Manufacturing method of miniature fluid actuator |
| CN113493185B (en) * | 2020-03-19 | 2024-05-10 | 研能科技股份有限公司 | Method for manufacturing microfluidic actuator |
-
2018
- 2018-11-07 TW TW107215170U patent/TWM575806U/en unknown
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111747376B (en) * | 2019-03-29 | 2023-06-30 | 研能科技股份有限公司 | Method for manufacturing a microfluidic actuator module |
| CN111747376A (en) * | 2019-03-29 | 2020-10-09 | 研能科技股份有限公司 | Method for manufacturing micro-fluid actuator module |
| CN111750142A (en) * | 2019-03-29 | 2020-10-09 | 研能科技股份有限公司 | Microfluidic actuator module |
| TWI695934B (en) * | 2019-03-29 | 2020-06-11 | 研能科技股份有限公司 | Micro-electromechanical system pump |
| TWI707821B (en) * | 2019-11-18 | 2020-10-21 | 研能科技股份有限公司 | Miniature fluid actuator |
| CN112814878A (en) * | 2019-11-18 | 2021-05-18 | 研能科技股份有限公司 | Micro fluid actuator |
| CN112808330B (en) * | 2019-11-18 | 2022-06-24 | 研能科技股份有限公司 | Method for manufacturing micro-fluid actuator |
| CN112814878B (en) * | 2019-11-18 | 2023-02-21 | 研能科技股份有限公司 | Micro fluid actuator |
| CN112808330A (en) * | 2019-11-18 | 2021-05-18 | 研能科技股份有限公司 | Method for manufacturing micro-fluid actuator |
| US11889766B2 (en) | 2019-11-18 | 2024-01-30 | Microjet Technology Co., Ltd. | Miniature fluid actuator |
| US11905168B2 (en) | 2019-11-18 | 2024-02-20 | Microjet Technology Co., Ltd. | Manufacturing method of miniature fluid actuator |
| CN113493185A (en) * | 2020-03-19 | 2021-10-12 | 研能科技股份有限公司 | Method for manufacturing micro-fluid actuator |
| CN113493185B (en) * | 2020-03-19 | 2024-05-10 | 研能科技股份有限公司 | Method for manufacturing microfluidic actuator |
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