TWM552025U - Thinned wafer-protecting ring - Google Patents

Description

薄型化晶圓保護環Thin wafer protection ring

本新型有關一種防止薄型化晶圓翹曲的晶圓保護環。The present invention relates to a wafer protection ring that prevents warpage of a thinned wafer.

晶圓為矽半導體積體電路製作所用的矽晶片，是生產積體電路所用的載體，按直徑而具有4英寸、5英寸、6英寸、8英寸、12英寸甚至更大的尺寸規格。晶圓越大，代表同一圓片上可生產的積體電路(integrated circuit, IC)就越多。Wafers are germanium wafers used in the fabrication of germanium semiconductor integrated circuits. They are carriers for the production of integrated circuits and are available in sizes of 4, 5, 6, 8, 8 or even larger in diameter. The larger the wafer, the more integrated circuits (ICs) that can be produced on the same wafer.

為了滿足元件薄型化、小型化的發展趨勢，許多半導體廠商藉由晶圓薄化技術製造出薄型化晶圓，以提升半導體元件性能。但在操作上，因為薄型化晶圓支撐力較為不足，在沒有外力支撐的情況下容易變形或翹曲，此時晶圓容易破損或產生缺陷。In order to meet the trend of thinner and smaller components, many semiconductor manufacturers have used thin wafer technology to fabricate thin wafers to improve the performance of semiconductor components. However, in operation, since the supporting force of the thinned wafer is insufficient, it is easily deformed or warped without external force support, and the wafer is easily broken or defective at this time.

目前已有團隊試圖就此問題提出解決方法。中華民國專利公告I427687號提出一種晶圓處理方法，係在晶圓研磨處理的過程中，對應於該晶圓的矽基板的後表面的裝置區域被研磨及移除，以形成一圓形的凹陷部份，而另一方面，對應於一周邊的額外區域(即，該晶圓的外邊緣)被保持及形成為一環狀增強部份，藉此可輕易地承載該晶圓。At present, the team has tried to propose a solution to this problem. The Republic of China Patent Publication No. I427687 proposes a wafer processing method in which a device region corresponding to a rear surface of a tantalum substrate of the wafer is ground and removed during a wafer grinding process to form a circular recess. In part, on the other hand, an additional area corresponding to a perimeter (i.e., the outer edge of the wafer) is held and formed as an annular reinforcing portion whereby the wafer can be easily carried.

但以上先前技術必須在晶圓研磨處理過程導入特殊的處理方法，方能形成具有上述結構的晶圓。因此，仍需一種較為簡便容易的方式來保護薄型化晶圓。However, the above prior art must introduce a special processing method in the wafer grinding process to form a wafer having the above structure. Therefore, there is still a need for a relatively simple and easy way to protect thinned wafers.

本新型的主要目的，在於解決薄型化晶圓容易翹曲的問題。The main purpose of the novel is to solve the problem that the thinned wafer is easily warped.

為達上述目的，本新型提供一種薄型化晶圓保護環，包括：一固定環，該固定環具有一中空、一圍繞該中空的內環面、以及一遠離該內環面的外環面，該固定環係配置於一薄型化晶圓的外邊緣而供該薄型化晶圓容置於該中空並抵靠該內環面以防止該薄型化晶圓翹曲，其中，該固定環具有一大於或一等於該薄型化晶圓的厚度。To achieve the above object, the present invention provides a thinned wafer protection ring, comprising: a fixing ring having a hollow, an inner annular surface surrounding the hollow, and an outer annular surface away from the inner annular surface. The fixing ring is disposed on an outer edge of a thinned wafer, and the thinned wafer is received in the hollow and abuts against the inner annular surface to prevent the thinned wafer from warping, wherein the fixing ring has a Greater than or equal to the thickness of the thinned wafer.

由以上可知，本新型相較於習知技藝可達到的功效在於：As can be seen from the above, the achievable effects of the present invention over conventional techniques are:

1. 本新型的薄型化晶圓保護環圍繞該薄型化晶圓的外邊緣，避免該薄型化晶圓翹曲變形，進而給與予該薄型化晶圓更周全的保護。1. The thinned wafer protection ring of the present type surrounds the outer edge of the thinned wafer to avoid warping deformation of the thinned wafer, and further protects the thinned wafer.

2. 本新型的薄型化晶圓保護環構造簡單，可降低製作成本。2. The novel thinned wafer protection ring has a simple structure and can reduce the manufacturing cost.

有關本新型的詳細說明及技術內容，現就配合圖式說明如下：The detailed description and technical content of this new model are described below with the following diagram:

首先請參閱『圖1』、『圖2A』。『圖1』係本新型的薄型化晶圓保護環使用示意圖，『圖2A』為『圖1』實施例中套設有該薄型化晶圓保護環的晶圓的示意圖。該薄型化晶圓保護環包括一固定環1，該固定環1具有一中空10、一圍繞該中空10的內環面11、以及一遠離該內環面11的外環面12。該固定環1係配置於一薄型化晶圓2的外邊緣，以供該薄型化晶圓2容置於該中空10並抵靠該內環面11，進而防止該薄型化晶圓2翹曲，達到保護薄型化晶圓的效果。First, please refer to "Figure 1" and "Figure 2A". FIG. 1 is a schematic view showing the use of the thinned wafer protection ring of the present invention, and FIG. 2A is a schematic view showing a wafer in which the thinned wafer protection ring is placed in the embodiment of FIG. The thinned wafer guard ring includes a retaining ring 1 having a hollow 10, an inner annulus 11 surrounding the hollow 10, and an outer annulus 12 remote from the inner annulus 11. The fixing ring 1 is disposed on the outer edge of the thinned wafer 2, so that the thinned wafer 2 is received in the hollow 10 and abuts against the inner annular surface 11, thereby preventing the thinned wafer 2 from warping. , to achieve the effect of protecting thin wafers.

為獲得足夠的支撐性，該固定環1較佳具有一大於該薄型化晶圓2的厚度，請參考『圖2B』，係沿著『圖2A』的B-B切面切割的示意圖，其中該薄型化晶圓2抵靠該固定環1的該內環面11。然而在其他實施例中，該固定環1的厚度亦可等於該薄型化晶圓2的厚度，只要該固定環1可以提供足夠的支撐力並達到保護薄型化晶圓不致翹曲變型的目的，本創作對此並無限制。In order to obtain sufficient support, the fixing ring 1 preferably has a thickness larger than that of the thinned wafer 2, please refer to FIG. 2B, which is a schematic view of cutting along the BB section of FIG. 2A, wherein the thinning is performed. The wafer 2 abuts against the inner annulus 11 of the stationary ring 1. In other embodiments, the thickness of the fixing ring 1 may also be equal to the thickness of the thinned wafer 2, as long as the fixing ring 1 can provide sufficient supporting force and achieve the purpose of protecting the thinned wafer from warping deformation. This creation has no restrictions on this.

於本實施例中，當該薄型化晶圓2容置於該中空10並抵靠該內環面11時，該內環面11係與該薄型化晶圓2直接接觸，然而在其他實施例中，該內環面11與該薄型化晶圓2之間亦可包括其他緩衝層或介質，令該薄型化晶圓2透過間接接觸的方式抵靠該內環面11。In the embodiment, when the thinned wafer 2 is received in the hollow 10 and abuts against the inner annular surface 11, the inner annular surface 11 is in direct contact with the thinned wafer 2, but in other embodiments The buffer layer or the medium may be included between the inner ring surface 11 and the thinned wafer 2, and the thinned wafer 2 is placed against the inner annular surface 11 by indirect contact.

『圖3』為本新型另一實施例中沿著『圖2A』的B-B切面切割的示意圖。在此實施例中，該固定環1的該內環面11包括一往該外環面12的方向凹陷的凹槽13，當薄型化晶圓保護環套設於該薄型化晶圓的外邊緣而使用時，該薄型化晶圓係放置在凹槽13中以強化固定性。Fig. 3 is a schematic view showing the cutting along the B-B section of Fig. 2A in another embodiment of the present invention. In this embodiment, the inner annular surface 11 of the fixing ring 1 includes a recess 13 recessed in the direction of the outer annular surface 12, and the thinned wafer protection ring is sleeved on the outer edge of the thinned wafer. In use, the thinned wafer is placed in the recess 13 to enhance the fixability.

於本新型又一實施例中，該薄型化晶圓2之一表面的周緣區域係形成有一環狀的導電薄層21，如『圖4』及『圖5』所示，該導電薄層21可利用塗布一導電漿料而形成，例如採用導電銀漿或鋁漿。In another embodiment of the present invention, a peripheral conductive region of one surface of the thinned wafer 2 is formed with an annular conductive thin layer 21, as shown in FIG. 4 and FIG. 5, the conductive thin layer 21 It can be formed by coating a conductive paste, for example, using a conductive silver paste or an aluminum paste.

當定義一與地面垂直的方向為「垂直軸向」，而一與地面水平的方向為「水平軸向」時，該凹槽13在一垂直軸向上具有一凹槽高度，且在一水平軸向上具有一凹槽深度。為了容設該薄型化晶圓，本創作的該凹槽高度係介於200 mm至2 mm之間，然而，該凹槽高度可藉由實際情況進行調整，譬如，隨著工藝進步，該薄型化晶圓的厚度可能越來越薄，此時該凹槽高度的高度也會減少以符合該薄型化晶圓的厚度，本創作對此並無限制。When defining a direction perpendicular to the ground as "vertical axis" and a direction horizontal to the ground is "horizontal axis", the groove 13 has a groove height in a vertical axis and is on a horizontal axis. It has a groove depth upward. In order to accommodate the thinned wafer, the height of the groove of the present invention is between 200 mm and 2 mm. However, the height of the groove can be adjusted by actual conditions, for example, as the process progresses, the thin type The thickness of the wafer may be thinner and thinner, and the height of the groove height is also reduced to conform to the thickness of the thinned wafer, which is not limited in this creation.

於此實施例中，該凹槽深度可設計介於0.5 mm至5 mm之間，同樣地，該凹槽深度亦可根據實際情況設計調整，本創作對此並無限制。In this embodiment, the groove depth can be designed to be between 0.5 mm and 5 mm. Similarly, the groove depth can also be adjusted according to actual conditions.

本創作中，只要可以提供足夠的支撐性，該固定環可完全地或部分地圍繞該晶圓。所謂「完全地圍繞該晶圓」係指該晶圓的外邊緣均被該固定環環繞；而「部分地圍繞該晶圓」係指該晶圓的50%至99%的外邊緣被該固定環環繞、更佳為70%至99%的外邊緣被該固定環所環繞、最佳為80%至99%的外邊緣被該固定環所環繞，此時，該固定環包括至少一個缺口而露出部分的薄型化晶圓的外邊緣。In the present creation, the retaining ring may completely or partially surround the wafer as long as sufficient support is provided. By "completely surrounding the wafer" is meant that the outer edge of the wafer is surrounded by the retaining ring; and "partially surrounding the wafer" means that 50% to 99% of the outer edge of the wafer is fixed by the Preferably, 70% to 99% of the outer edge of the ring is surrounded by the fixing ring, preferably 80% to 99% of the outer edge is surrounded by the fixing ring, at which time the fixing ring includes at least one notch A portion of the outer edge of the thinned wafer is exposed.

譬如，於本創作其他實施例中，該固定環包括一第一固定單元以及一在該薄型化晶圓上與該第一固定單元相對應設置的第二固定單元。該第一固定單元具有一第一內環面以及一第一外環面，且該第二固定單元亦具有一第二內環面以及一第二外環面。當該固定環環繞該薄型化晶圓時，該第一內環面以及該第二內環面係抵靠該薄型化晶圓。For example, in other embodiments of the present invention, the fixing ring includes a first fixing unit and a second fixing unit disposed on the thinned wafer corresponding to the first fixing unit. The first fixing unit has a first inner annular surface and a first outer annular surface, and the second fixing unit also has a second inner annular surface and a second outer annular surface. When the fixing ring surrounds the thinned wafer, the first inner annular surface and the second inner annular surface abut against the thinned wafer.

此實施例中，該第一內環面與該第二內環面可直接接觸該晶圓、亦可間接地抵靠該晶圓。In this embodiment, the first inner annular surface and the second inner annular surface may directly contact the wafer, or may indirectly abut the wafer.

為了強化固定效果，該第一內環面上具有一往該第一外環面的方向凹陷的第一凹槽且該第二內環面上具有一往該第二外環面的方向凹陷的第二凹槽，供該晶圓夾置在該第一凹槽與該第二凹槽之間。至於該第一凹槽與該第二凹槽的該凹槽高度及該凹槽深度與前文所述的定義相同，且可依實際情況設計調整，在此不另贅述。In order to enhance the fixing effect, the first inner ring surface has a first recess recessed toward the first outer annular surface and the second inner annular surface has a recess toward the second outer annular surface. a second recess for the wafer to be sandwiched between the first recess and the second recess. The groove height and the groove depth of the first groove and the second groove are the same as those defined in the foregoing, and can be adjusted according to actual conditions, and are not described herein.

以上已將本新型做一詳細說明，惟以上所述者，僅爲本新型的一較佳實施例而已，當不能限定本新型實施的範圍。即凡依本新型申請範圍所作的均等變化與修飾等，皆應仍屬本新型的專利涵蓋範圍內。The present invention has been described in detail above, but the above is only a preferred embodiment of the present invention, and the scope of the present invention is not limited. That is, the equal changes and modifications made in accordance with the scope of this new application shall remain within the scope of the patent of this new type.

1‧‧‧固定環
10‧‧‧中空
11‧‧‧內環面
12‧‧‧外環面
13‧‧‧凹槽
2‧‧‧薄型化晶圓
21‧‧‧導電薄層
BB‧‧‧切面方向1‧‧‧Fixed ring
10‧‧‧ hollow
11‧‧‧ Inner torus
12‧‧‧ outer annulus
13‧‧‧ Groove
2‧‧‧Thin-type wafer
21‧‧‧ Conductive thin layer
BB‧‧‧cut direction

『圖1』，為本新型的薄型化晶圓保護環使用示意圖。 『圖2A』，為『圖1』實施例中套設有該薄型化晶圓保護環的晶圓的示意圖。 『圖2B』為沿著『圖2A』的B-B切面切割的示意圖。 『圖3』，為本新型另一實施例中，沿著『圖2A』的B-B切面切割的示意圖。 『圖4』為本新型又一實施例的薄型化晶圓保護環使用示意圖。 『圖5』為『圖4』實施例中套設有該薄型化晶圓保護環的晶圓的示意圖。Figure 1 shows the schematic diagram of the new thin wafer protection ring. Fig. 2A is a schematic view showing a wafer in which the thinned wafer protection ring is placed in the embodiment of Fig. 1. FIG. 2B is a schematic view of the cutting along the B-B section of FIG. 2A. Fig. 3 is a schematic view showing the cutting along the B-B section of Fig. 2A in another embodiment of the present invention. FIG. 4 is a schematic view showing the use of a thinned wafer protection ring according to still another embodiment of the present invention. FIG. 5 is a schematic view of a wafer in which the thinned wafer protection ring is placed in the embodiment of FIG. 4 .

1‧‧‧固定環 1‧‧‧Fixed ring

10‧‧‧中空 10‧‧‧ hollow

11‧‧‧內環面 11‧‧‧ Inner torus

12‧‧‧外環面 12‧‧‧ outer annulus

2‧‧‧薄型化晶圓 2‧‧‧Thin-type wafer

Claims (10)

一種薄型化晶圓保護環，包括：一固定環，該固定環具有一中空、一圍繞該中空的內環面、以及一遠離該內環面的外環面，該固定環係配置於一薄型化晶圓的外邊緣而供該薄型化晶圓容置於該中空並抵靠該內環面以防止該薄型化晶圓翹曲，其中，該固定環具有一大於或一等於該薄型化晶圓的厚度。A thinned wafer protection ring includes: a fixing ring having a hollow, an inner annular surface surrounding the hollow, and an outer annular surface away from the inner annular surface, the fixing ring being disposed in a thin shape The outer edge of the wafer is provided for the thinned wafer to be placed in the hollow and abut against the inner annular surface to prevent warpage of the thinned wafer, wherein the fixed ring has a greater than or equal to the thinned crystal The thickness of the circle. 如申請專利範圍第1項所述之薄型化晶圓保護環，其中，該內環面包括一往該外環面的方向凹陷的凹槽。The thinned wafer protection ring of claim 1, wherein the inner annular surface comprises a recess recessed in a direction of the outer annular surface. 如申請專利範圍第2項所述之薄型化晶圓保護環，其中，該凹槽在一垂直軸向上具有一凹槽高度，且在一水平軸向上具有一凹槽深度。The thinned wafer protection ring of claim 2, wherein the groove has a groove height in a vertical axis and a groove depth in a horizontal axis. 如申請專利範圍第3項所述之薄型化晶圓保護環，其中，該凹槽高度係介於200 mm至2 mm之間。The thinned wafer protection ring of claim 3, wherein the groove height is between 200 mm and 2 mm. 如申請專利範圍第3項所述之薄型化晶圓保護環，其中，該凹槽深度係介於0.5 mm至5 mm之間。The thinned wafer protection ring of claim 3, wherein the groove depth is between 0.5 mm and 5 mm. 如申請專利範圍第1項所述之薄型化晶圓保護環，其中，該內環面係與該薄型化晶圓直接接觸。The thinned wafer protection ring of claim 1, wherein the inner annular surface is in direct contact with the thinned wafer. 如申請專利範圍第1項所述之薄型化晶圓保護環，其中，該固定環係完全地圍繞該晶圓。The thinned wafer protection ring of claim 1, wherein the fixed ring completely surrounds the wafer. 如申請專利範圍第1項所述之薄型化晶圓保護環，其中，該固定環係部分地圍繞該晶圓。The thinned wafer protection ring of claim 1, wherein the fixed ring system partially surrounds the wafer. 如申請專利範圍第1項所述之薄型化晶圓保護環，其中，該固定環更包括： 一第一固定單元，該第一固定單元具有一第一內環面以及一第一外環面；以及 一與該第一固定單元相對應設置的第二固定單元，該第二固定單元具有一第二內環面以及一第二外環面； 其中，該第一固定單元以及該第二固定單元係相對應地配置於該薄型化晶圓的外邊緣且分別以該第一內環面以及該第二內環面抵靠該薄型化晶圓。The thinned wafer protection ring of claim 1, wherein the fixing ring further comprises: a first fixing unit having a first inner annular surface and a first outer annular surface And a second fixing unit disposed corresponding to the first fixing unit, the second fixing unit having a second inner ring surface and a second outer ring surface; wherein the first fixing unit and the second fixing unit The cells are correspondingly disposed on the outer edge of the thinned wafer and the first inner annular surface and the second inner annular surface respectively abut the thinned wafer. 如申請專利範圍第9項所述之薄型化晶圓保護環，其中，該第一內環面上具有一往該第一外環面的方向凹陷的第一凹槽且該第二內環面上具有一往該第二外環面的方向凹陷的第二凹槽，供該晶圓夾置在該第一凹槽與該第二凹槽之間。The thinned wafer protection ring of claim 9, wherein the first inner ring surface has a first recess recessed in a direction of the first outer annular surface and the second inner annular surface The second recess has a second recess recessed in the direction of the second outer annular surface, and the wafer is sandwiched between the first recess and the second recess.