TWM545359U - Edge ring with coating layer for plasma processing - Google Patents

Abstract

An edge ring with coating layer for plasma processing is disclosed. The edge ring comprises: a substrate having a surface, and a surface coating layer on the surface. The surface of the substrate is roughened by means of sand blasting. Then, a coating material is sprayed on the roughened surface of the substrate by means of atmosphere plasma spray (APS), so as to form the surface coating layer. The coating material can be yttrium-containing or lanthanum-containing material.

Description

用於電漿處理之具有塗層的邊緣環Coated edge ring for plasma treatment

本新型創作係有關用於電漿處理之邊緣環，尤其有關用於電漿處理之具有塗層的邊緣環。The novel creation relates to edge rings for plasma processing, and more particularly to coated edge rings for plasma processing.

在半導體晶圓的處理過程中，涉及各種物理性及/或化學性的沉積及蝕刻步驟。這些步驟通常在電漿處理腔室中進行。例如，在電漿處理腔室中，使用圖案化光阻層並藉由電漿蝕刻技術將材料層進行圖案化，以在半導體晶圓上形成半導體裝置及結構。Various physical and/or chemical deposition and etching steps are involved in the processing of semiconductor wafers. These steps are typically performed in a plasma processing chamber. For example, in a plasma processing chamber, a patterned photoresist layer is used and the material layer is patterned by plasma etching techniques to form semiconductor devices and structures on the semiconductor wafer.

然而，在電漿處理過程中，除了對目標晶圓或其上之材料層進行處理外，電漿環境也會對電漿處理腔室內的邊緣環表面進行轟擊。在沒有適當的保護措施情況下，曝露在電漿環境下之邊緣環基材將因此受到侵蝕（erosion）、腐蝕（corrosion）、或侵蝕-腐蝕，而使基材老化或使基材損耗加快，進而造成微粒污染、電漿分佈不均勻、良率下降、製造成本升高等等問題。舉例而言，當邊緣環因電漿轟襲而損耗時，其損耗部份附近的電漿分佈將改變。這將使邊緣環損耗部份附近的晶圓上所製作的半導體裝置特性與晶圓其他部份不同，而導致電路特性偏移。甚至，邊緣環損耗部份可能產生微粒污染，而導致晶圓上所製作的半導體裝置失效。However, in the plasma processing process, in addition to processing the target wafer or the material layer thereon, the plasma environment also bombards the edge ring surface within the plasma processing chamber. Without proper protective measures, the edge ring substrate exposed to the plasma environment will be subjected to erosion, corrosion, or erosion-corrosion, which will age the substrate or accelerate the loss of the substrate. This causes problems such as particulate contamination, uneven plasma distribution, decreased yield, and increased manufacturing costs. For example, when the edge ring is lost due to plasma bombardment, the plasma distribution near the loss portion will change. This will cause the characteristics of the semiconductor device fabricated on the wafer near the edge ring loss portion to be different from the rest of the wafer, resulting in a shift in circuit characteristics. Even the edge ring loss portion may cause particulate contamination, which may cause the semiconductor device fabricated on the wafer to fail.

因此，電漿處理腔室內所使用的邊緣環必須定期清理或更換，以避免上述問題產生。但頻繁的清理或更換，不僅使邊緣環的消耗量增加，而且會使半導體處理設備的待機時間增加，因而使產能下降。再者，每次維修或更換邊緣環後的製程調整，也都會使生產成本升高。Therefore, the edge rings used in the plasma processing chamber must be periodically cleaned or replaced to avoid the above problems. However, frequent cleaning or replacement not only increases the consumption of the edge ring, but also increases the standby time of the semiconductor processing equipment, thereby reducing the production capacity. Furthermore, the process adjustment after each repair or replacement of the edge ring will also increase the production cost.

如上述之電漿對於曝露在電漿環境下之邊緣環基材表面的轟擊所造成之各種問題，一直都是電漿處理腔室設計的嚴峻挑戰。尤其，隨著半導體製作技術的發展，這些問題也變得更為嚴重。故亟需一種具有優異抗蝕刻性及抗腐蝕性的邊緣環結構來克服上述問題。The various problems caused by the above-mentioned plasma bombardment of the surface of the edge ring substrate exposed to the plasma environment have always been a serious challenge in the design of the plasma processing chamber. In particular, these problems have become more serious with the development of semiconductor fabrication technology. Therefore, an edge ring structure having excellent etching resistance and corrosion resistance is required to overcome the above problems.

本新型創作即是在以上所述之背景下所產生，其涉及在邊緣環之基材上噴塗一表面塗層，以使該具有表面塗層之邊緣環結構能克服上述問題。The novel creation is produced in the context described above, which involves spraying a surface coating on the substrate of the edge ring to overcome the above problems with the edge ring structure having the surface coating.

在本創作之一實施方式中，提供一種用於電漿處理之具有塗層的邊緣環，該邊緣環包含：一基材，具有一表面；及一表面塗層，位在基材的表面上。藉由噴砂的方式使基材的表面粗糙化至一預定粗糙度，再藉由大氣電漿熔射（APS，atmosphere plasma spray）的方式將塗層材料噴塗在粗糙化之基材的表面上，以形成表面塗層。塗層材料可為含釔材料或含鑭材料。In one embodiment of the present invention, a coated edge ring for plasma treatment is provided, the edge ring comprising: a substrate having a surface; and a surface coating disposed on the surface of the substrate . The surface of the substrate is roughened to a predetermined roughness by sand blasting, and the coating material is sprayed on the surface of the roughened substrate by means of atmospheric plasma spray (APS). To form a surface coating. The coating material may be a cerium-containing material or a cerium-containing material.

在本創作之另一實施方式中，可先將遮罩設置在不欲塗佈表面塗層之基材的部份表面上，然後再藉由噴砂的方式使未被遮罩覆蓋之基材的另一部份表面粗糙化，再藉由大氣電漿熔射的方式將塗層材料塗佈在粗糙化之未被遮罩覆蓋之基材的另一部份表面上，以在未被遮罩覆蓋之基材的另一部份表面上形成表面塗層。In another embodiment of the present invention, the mask may be first disposed on a portion of the surface of the substrate on which the surface coating is not applied, and then the substrate not covered by the mask may be sandblasted. The other part is roughened, and the coating material is coated on the surface of the roughened unmasked substrate by atmospheric plasma spraying to be unmasked. A surface coating is formed on the surface of another portion of the covered substrate.

根據本創作之一實施方式，塗層材料較佳地為Y ₂O ₃、YF ₃、YOF（yttrium oxyfluoride，釔氧氟化物）、YAG（yttrium aluminum garnet，釔鋁石榴石）、或LZO（lanthanum zirconate，鋯酸鑭）。 According to one embodiment of the present invention, the coating material is preferably Y ₂ O ₃ , YF ₃ , YOF (yttrium oxyfluoride), YAG (yttrium aluminum garnet), or LZO (lanthanum) Zirconate, strontium zirconate).

根據本創作之一實施方式，進行表面噴砂後之粗糙化基材表面的粗糙度較佳地為大於2μm。According to one embodiment of the present invention, the roughness of the surface of the roughened substrate after surface blasting is preferably greater than 2 μm.

根據本創作之一實施方式，進行表面噴砂後之粗糙化基材表面的粗糙度更佳地為2～6μm。According to one embodiment of the present invention, the roughness of the surface of the roughened substrate after surface blasting is more preferably 2 to 6 μm.

根據本創作之一實施方式，邊緣環之表面塗層的粗糙度較佳地為小於10μm。According to one embodiment of the present invention, the surface coating of the edge ring preferably has a roughness of less than 10 μm.

根據本創作之一實施方式，邊緣環之表面塗層的厚度較佳地為5～300μm。According to one embodiment of the present invention, the thickness of the surface coating of the edge ring is preferably from 5 to 300 μm.

因此，當根據本創作之實施方式的邊緣環表面塗層損耗時，僅需將該損耗邊緣環自電漿處理腔室取出，並直接更換為其他預先做好表面塗層的相同邊緣環，如此可迅速完成邊緣環更換，讓電漿處理設備再次投入生產，無需等待清理邊緣環的時間，故能大幅縮短電漿處理設備的維護時間，進而提高產能並降低生產成本。然後，可將更換下來的損耗邊緣環之受損表面塗層完全清除，並重新塗佈新的表面塗層後，即可作為下次其他損耗邊緣環的直接更換品，藉此提供有效的邊緣環維修方式。相較於不具表面塗層之習知邊緣環（其基材的抗蝕刻性較差，故容易損耗，而且基材損耗後，便需丟棄），藉由根據本創作之重新實施表面塗層的方式，能有效延長邊緣環基材的使用壽命，因此大幅降低邊緣環耗材的使用成本。再者，根據本創作之表面塗層具有優異的抗蝕刻性及抗腐蝕性，故能延長邊緣環的更換週期，因此亦可延長電漿處理設備的維護週期，進而提高產能並降低生產成本。另一方面，由於根據本創作之表面塗層具有優異的抗蝕刻性及抗腐蝕性，故能降低電漿處理過程中的微粒產生，因此使製程良率提高。Therefore, when the edge ring surface coating is lost according to the embodiment of the present invention, it is only necessary to take the loss edge ring from the plasma processing chamber and directly replace it with the same edge ring of other surface coatings beforehand. The edge ring can be quickly replaced, and the plasma processing equipment can be put into production again without waiting for the time to clean the edge ring, so the maintenance time of the plasma processing equipment can be greatly shortened, thereby increasing the production capacity and reducing the production cost. Then, the damaged surface coating of the replaced loss edge ring can be completely removed, and the new surface coating can be reapplied, which can be used as a direct replacement for the next loss edge ring, thereby providing an effective edge. Ring maintenance method. Compared with the conventional edge ring without surface coating (the substrate is poor in etching resistance, it is easy to be lost, and after the substrate is worn out, it needs to be discarded), by re-implementing the surface coating according to the present invention. It can effectively extend the service life of the edge ring substrate, thus greatly reducing the cost of using the edge ring consumables. Furthermore, the surface coating according to the present invention has excellent etching resistance and corrosion resistance, so that the replacement cycle of the edge ring can be extended, thereby prolonging the maintenance cycle of the plasma processing equipment, thereby increasing the productivity and reducing the production cost. On the other hand, since the surface coating according to the present invention has excellent etching resistance and corrosion resistance, the generation of particles during the plasma treatment can be reduced, thereby improving the process yield.

由此可知，本創作具有相當顯著的優點，因此能達到縮短設備維護時間、延長設備維護週期、提高產能、降低生產成本、降低微粒污染、提高良率、延長邊緣環使用壽命、降低邊緣環使用成本、容易維修等等功效。It can be seen that this creation has quite significant advantages, so it can shorten equipment maintenance time, extend equipment maintenance period, increase production capacity, reduce production cost, reduce particulate pollution, improve yield, extend edge ring life and reduce edge ring use. Cost, easy maintenance, etc.

圖1係根據本創作之一實施例之電漿處理腔室1的示意圖。一般電漿處理過程大致如下。在進行電漿處理前，先經由閘門3將晶圓W載入電漿處理腔室1內，並置於靜電夾具5（ESC，electrostatic chuck）上。此外，利用邊緣環7環繞支撐晶圓W。然後，從處理氣體入口9導入處理氣體（例如：Cl ₂、CF ₄、Ar、He等等），並藉由氣體分佈器11使處理氣體平均分佈至電漿處理腔室1內。接著，藉由RF電源13、15產生適當的偏壓，並將偏壓分別施加至上電極17及下電極19，從而使處理氣體轉變為電漿以進行電漿處理。在完成電漿處理後，藉由排氣閥21及排氣泵23將剩餘處理氣體排出。然後，經由閘門3將晶圓W自電漿處理腔室1移出。 1 is a schematic illustration of a plasma processing chamber 1 in accordance with an embodiment of the present invention. The general plasma processing process is roughly as follows. Before the plasma treatment, the wafer W is loaded into the plasma processing chamber 1 via the gate 3, and placed on an electrostatic chuck (ESC). Further, the wafer W is supported by the edge ring 7. Then, a process gas (for example, Cl ₂ , CF ₄ , Ar, He, etc.) is introduced from the process gas inlet 9 , and the process gas is evenly distributed into the plasma processing chamber 1 by the gas distributor 11 . Next, an appropriate bias voltage is generated by the RF power sources 13, 15, and a bias voltage is applied to the upper electrode 17 and the lower electrode 19, respectively, thereby converting the processing gas into plasma to perform plasma processing. After the plasma treatment is completed, the remaining process gas is discharged by the exhaust valve 21 and the exhaust pump 23. Then, the wafer W is removed from the plasma processing chamber 1 via the gate 3.

應注意在上述電漿處理過程中，所產生之電漿不僅作用在目標晶圓W上，同時也作用在電漿處理腔室1內之任何曝露於電漿環境之邊緣環7的表面上。這樣的電漿轟襲作用將對電漿處理腔室1內的邊緣環7逐漸侵蝕（erosion）、腐蝕（corrosion）、或侵蝕-腐蝕，從而造成各種問題。舉例而言，邊緣環7在電漿的轟襲下可能老化變質，而使晶圓W周圍的電漿分佈不均勻。或者，邊緣環7在電漿的轟襲下可能損耗而造成微粒污染，導致良率降低。It should be noted that during the above-described plasma processing, the generated plasma acts not only on the target wafer W but also on the surface of the edge ring 7 exposed to the plasma environment in the plasma processing chamber 1. Such plasma bombardment will gradually erode, corrosion, or erode-corrosion of the edge ring 7 in the plasma processing chamber 1, causing various problems. For example, the edge ring 7 may deteriorate under the attack of the plasma, and the plasma distribution around the wafer W may be uneven. Alternatively, the edge ring 7 may be depleted under the impact of the plasma to cause particulate contamination, resulting in a decrease in yield.

圖2A～2C係根據本創作之一實施例之邊緣環的示意圖。圖2A為邊緣環7的俯視圖，圖2B為其沿著D-D截線的橫剖面圖，及圖2C為其E部份的局部放大圖。如圖所示，邊緣環7的部份表面上具有表面塗佈層。在另一實施例中，亦可視實際應用情況所需，而將塗層材料塗佈在邊緣環的整個表面上。2A-2C are schematic illustrations of edge rings in accordance with an embodiment of the present invention. 2A is a plan view of the edge ring 7, FIG. 2B is a cross-sectional view taken along line D-D, and FIG. 2C is a partial enlarged view of portion E thereof. As shown, a portion of the surface of the edge ring 7 has a surface coating layer thereon. In another embodiment, the coating material may be applied to the entire surface of the edge ring, as desired for the actual application.

圖3係一流程圖，用以處理本創作之具有塗層的邊緣環。該方法包含下列步驟：提供基材步驟31、遮罩步驟33、噴砂步驟35、電漿熔射步驟37、及遮罩移除步驟39。Figure 3 is a flow chart for processing the coated edge ring of the present invention. The method comprises the steps of providing a substrate step 31, a masking step 33, a sandblasting step 35, a plasma spraying step 37, and a mask removal step 39.

首先，在步驟31之中，選擇一種適合材料作為欲製作邊緣環之基材41，例如：Si、SiC、石英、Al ₂O ₃陶瓷、Y ₂O ₃陶瓷、金屬等等。 First, in step 31, a suitable material is selected as the substrate 41 on which the edge ring is to be formed, for example, Si, SiC, quartz, Al ₂ O ₃ ceramic, Y ₂ O ₃ ceramic, metal, or the like.

接著，在步驟33之中，選擇性地將遮罩設置在不欲進行表面噴塗之基材41的部份表面上。使用遮罩的目地在於保護不欲形成塗層的部份表面，以免在後續噴砂及噴塗步驟中受到損傷。然而，在另一實施方式中，若要將基材41的整個表面進行噴塗，則不需執行此步驟（亦即，不使用遮罩）。Next, in step 33, the mask is selectively placed on a portion of the surface of the substrate 41 where the surface coating is not desired. The purpose of using the mask is to protect a portion of the surface from which the coating is not desired to be protected from damage during subsequent blasting and spraying steps. However, in another embodiment, if the entire surface of the substrate 41 is to be sprayed, this step is not required (i.e., no mask is used).

在步驟35之中，藉由表面噴砂（sand blasting）的方式，使未被遮罩覆蓋之基材41的另一部份表面粗糙化。亦即，使欲進行噴塗之基材41的曝露部份表面粗糙化。具體而言，噴砂步驟係以砂材撞擊基材41表面，改變基材41的表面以建立一預定之粗糙度，其中所使用的砂材可為碳化矽砂（SiC）或氧化鋁砂（Al ₂O ₃）。表面噴砂之目的係使欲進行塗佈之基材41的曝露部份表面更為粗糙，以使後續的塗層材料更容易附著在基材41的粗糙化表面上。換言之，藉由表面噴砂步驟將基材41的表面粗糙化，以使基材表面與塗層材料之間具有良好的附著度。若基材41的表面粗糙度太低，則可能導致後續的塗層材料附著狀況不佳，而發生表面塗層剝落的問題。此外，經粗糙化之基材41的曝露表面粗糙度較佳地為約大於2μm，且更佳地為約2～6μm。 In step 35, another portion of the surface of the substrate 41 that is not covered by the mask is roughened by surface blasting. That is, the exposed portion of the substrate 41 to be sprayed is roughened. Specifically, the blasting step strikes the surface of the substrate 41 with a sand material, and changes the surface of the substrate 41 to establish a predetermined roughness, wherein the sand material used may be cerium carbide (SiC) or alumina sand (Al). ₂ O ₃ ). The purpose of surface blasting is to make the exposed portion of the substrate 41 to be coated rougher, so that the subsequent coating material is more likely to adhere to the roughened surface of the substrate 41. In other words, the surface of the substrate 41 is roughened by a surface blasting step to provide good adhesion between the surface of the substrate and the coating material. If the surface roughness of the substrate 41 is too low, the subsequent coating material may be poorly attached, and the problem of surface coating peeling may occur. Further, the exposed surface roughness of the roughened substrate 41 is preferably about more than 2 μm, and more preferably about 2 to 6 μm.

然後，在步驟37之中，藉由大氣電漿熔射（APS，atmosphere plasma spray）的方式，將塗層材料噴塗在粗糙化之未被遮罩覆蓋之基材的另一部份表面（曝露部份表面）上，以在此曝露部份表面上形成表面塗層。塗層材料可為含釔材料或含鑭材料。Then, in step 37, the coating material is sprayed on the surface of the roughened unmasked substrate by exposure to atmospheric plasma spray (APS) (exposure plasma spray). Part of the surface) to form a surface coating on the exposed portion of the surface. The coating material may be a cerium-containing material or a cerium-containing material.

現在參考圖4，其為大氣電漿熔射（APS）之示意圖。大氣電漿熔射是一種在大氣環境下進行的熱噴塗法，其操作大致如下。大氣電漿熔射裝置具有電極43及噴嘴44，且電極43與噴嘴44之間形成一噴射腔室。將直流偏壓V施加至電極43及噴嘴44，其中電極43作為負極而噴嘴44作為正極，從而在電極43（負極）與噴嘴44（正極）之間產生電弧。當供應電漿氣體45（例如：Ar或H ₂）進入噴射腔室時，由於受到電弧作用而使電漿氣體45形成電漿噴流（plasma plume）。另一方面，當不穩定的電漿離子復合回到氣體狀態時，將釋放出極大的熱能而產生高溫。然後，將塗層材料46（通常為固態粉末狀材料）及載體氣體（例如：Ar）一起供應至噴嘴44的出口處。此時，所供應之塗層材料46因高溫而完全熔融，並與電漿噴流形成噴塗材料流47。藉由氣流引導，噴塗材料流47朝基材41噴射，而塗佈在基材41的表面上，因此形成表面塗層42。冷卻水48係用以控制噴流溫度，及避免溫度過高。 Reference is now made to Fig. 4, which is a schematic illustration of atmospheric plasma spray (APS). Atmospheric plasma spraying is a thermal spraying method performed in an atmospheric environment, and its operation is roughly as follows. The atmospheric plasma spray device has an electrode 43 and a nozzle 44, and an injection chamber is formed between the electrode 43 and the nozzle 44. A DC bias voltage V is applied to the electrode 43 and the nozzle 44, wherein the electrode 43 serves as a negative electrode and the nozzle 44 serves as a positive electrode, thereby generating an arc between the electrode 43 (negative electrode) and the nozzle 44 (positive electrode). When the supply of the plasma gas 45 (for example, Ar or H ₂ ) enters the ejection chamber, the plasma gas 45 forms a plasma plume due to the action of the arc. On the other hand, when the unstable plasma ions recombine back to the gas state, a great heat energy is released to generate a high temperature. Then, a coating material 46 (usually a solid powdery material) and a carrier gas (for example, Ar) are supplied together to the outlet of the nozzle 44. At this point, the supplied coating material 46 is completely melted due to the high temperature and forms a spray material stream 47 with the plasma jet. By the air flow, the spray material stream 47 is sprayed toward the substrate 41 and coated on the surface of the substrate 41, thus forming a surface coating 42. Cooling water 48 is used to control the jet temperature and to avoid excessive temperatures.

上述之表面塗層42的粗糙度較佳地為約小於10μm，且其厚度較佳地為約5～300μm、更佳地為約200μm。此外，表面塗層材料46較佳地為Y ₂O ₃、YF ₃、YOF（yttrium oxyfluoride，釔氧氟化物）、YAG（yttrium aluminum garnet，釔鋁石榴石）、或LZO（lanthanum zirconate，鋯酸鑭）。 The surface coating 42 described above preferably has a roughness of less than about 10 μm and a thickness of preferably from about 5 to 300 μm, more preferably about 200 μm. Further, the surface coating material 46 is preferably Y ₂ O ₃ , YF ₃ , YOF (yttrium oxyfluoride), YAG (yttrium aluminum garnet), or LZO (lanthanum zirconate). lanthanum).

最後，在步驟39之中，將先前選擇性地設置在基材41上的遮罩移除，即可得到在基材41上具有表面塗層42之邊緣環。此步驟僅在先前有使用遮罩（步驟33）以進行部份表面塗層的情況下，才需執行。Finally, in step 39, the mask previously selectively disposed on the substrate 41 is removed to obtain an edge ring having a surface coating 42 on the substrate 41. This step is only required if a mask (step 33) has been previously used for partial surface coating.

另一方面，若在處理從電漿處理設備所更換下來的表面塗層受損邊緣環時，則於步驟31之中，先將其受損的表面塗層完全清除後，再執行上述各處理步驟。On the other hand, if the surface coating damaged edge layer replaced by the plasma processing apparatus is treated, then in step 31, the damaged surface coating is completely removed, and then the above processes are performed. step.

以下，將說明根據本創作之實施例的各種實際測試結果。Hereinafter, various actual test results according to embodiments of the present creation will be explained.

表1為根據本創作之實施例的樣品之物理特性測試結果。測試樣品條件如下： （1）基材 - 材料：Al 6061（金屬）、Al ₂O ₃陶瓷 （2）噴砂處理 - 粗糙度：2～6μm （3）大氣電漿熔射處理 - 電漿氣體：Ar（40～80NLPM）、H ₂（4～20NLPM） - 載體氣體：Ar（2～6NLPM） - 塗層材料：Y ₂O ₃、YF ₃、YOF（氧原子含量：2～12at%） - 電流：400～800A - 噴塗距離：50～200mm - 功率：25～60Kw - 塗層厚度：～200μm 其中，NLPM為正規公升/每分鐘（normal liter per minute），且噴塗距離為噴嘴口到基材表面的距離。   【表1】 <TABLE border="1" borderColor="#000000" width="_0003"><TBODY><tr><td> 測試項目 </td><td> Y₂O₃</td><td> YF₃</td><td> YOF </td></tr><tr><td> 塗層厚度 [μm] </td><td> 200 </td><td> 200 </td><td> 200 </td></tr><tr><td> 粗糙度 [μm] </td><td> 5.0~6.0 </td><td> 5.0~6.0 </td><td> 4.0~6.0 </td></tr><tr><td> 硬度 [Hv] </td><td> 450~500 </td><td> 250~350 </td><td> 350~500 </td></tr><tr><td> 附著度 [psi] </td><td> ≧6000 </td><td> ≧7000 </td><td> ≧6000 </td></tr><tr><td> 崩潰電壓 [V/mil] </td><td> ＞550 </td><td> ＞500 </td><td> ＞600 </td></tr><tr><td> 孔隙度 [%] </td><td> ＜3.0 </td><td> ＜3.0 </td><td> ＜3.0 </td></tr></TBODY></TABLE>Table 1 shows the results of physical property test of samples according to an embodiment of the present creation. The test sample conditions are as follows: (1) Substrate - Material: Al 6061 (metal), Al ₂ O ₃ ceramic (2) Sandblasting - Roughness: 2 to 6 μm (3) Atmospheric plasma spray treatment - Plasma gas: Ar (40 to 80 NLPM), H ₂ (4 to 20 NLPM) - Carrier gas: Ar (2 to 6 NLPM) - Coating material: Y ₂ O ₃ , YF ₃ , YOF (oxygen atom content: 2 to 12 at%) - Current :400～800A - Spraying distance: 50～200mm - Power: 25～60Kw - Coating thickness: ~200μm Among them, NLPM is normal liter per minute, and the spraying distance is from nozzle to substrate surface the distance. [Table 1] <TABLE border="1"borderColor="#000000"width="_0003"><TBODY><tr><td> Test item</td><td>Y₂O₃</td><td>YF₃</td><td> YOF </td></tr><tr><td> coating thickness [μm] </td><td> 200 </td><td> 200 </td><td> 200 </td></tr><tr><td> Roughness [μm] </td><td> 5.0~6.0 </td><td> 5.0~6.0 </td><td> 4.0~6.0 </td></tr><tr><td> Hardness [Hv] </td><td > 450~500 </td><td> 250~350 </td><td> 350~500 </td></tr><tr><td> Adhesion [psi] </td><td> ≧6000 </td><td> ≧7000 </td><td> ≧6000 </td></tr><tr><td> Crash voltage [V/mil] </td><td>>550</td><td>>500</td><td>>600</td></tr><tr><td> Porosity [%] </td><td><3.0</td><td><3.0</td><td><3.0</td></tr></TBODY></TABLE>

圖5係測試載具之示意圖。將根據本創作之實施例的數個測試樣品51設置在6吋矽晶圓載具52上，然後將其載入電漿處理腔室內執行電漿蝕刻，以進行表面塗層的蝕刻測試。在電漿蝕刻完成後，依據電漿轟擊後的表面狀況來計算蝕刻速率，蝕刻率越低代表具有較佳的抗蝕刻性。Figure 5 is a schematic illustration of a test carrier. A plurality of test samples 51 according to an embodiment of the present invention are placed on a 6" wafer carrier 52 and then loaded into a plasma processing chamber to perform a plasma etch for an etch test of the surface coating. After the plasma etching is completed, the etching rate is calculated according to the surface condition after the plasma bombardment, and the lower the etching rate, the better the etching resistance.

圖6A～6B係上述測試樣品及對照實驗基材的蝕刻測試結果。圖6A中的蝕刻測試條件為： - 電漿源：ICP（inductively coupled plasma，感應式耦合電漿） - RF偏壓功率：500W - RF來源功率：1000W - 處理氣體：O ₂100sccm - 處理壓力：5mTorr - RF施加時間：6小時 此外，圖6B中的蝕刻測試條件為： - 電漿源：ICP - RF偏壓功率：500W - RF來源功率：1000W - 處理氣體：CF ₄83sccm - 處理壓力：5mTorr - RF施加時間：6小時 其中，sccm為標準立方公分/每分鐘（standard cubic centimeter per minute）。 6A to 6B are etching test results of the above test sample and the control test substrate. The etching test conditions in Fig. 6A are: - Plasma source: ICP (inductively coupled plasma) - RF bias power: 500 W - RF source power: 1000 W - Process gas: O ₂ 100 sccm - Process pressure: 5mTorr - RF application time: 6 hours In addition, the etching test conditions in Figure 6B are: - Plasma source: ICP - RF bias power: 500W - RF source power: 1000W - Process gas: CF ₄ 83sccm - Process pressure: 5mTorr - RF application time: 6 hours, where sccm is standard cubic centimeter per minute.

由圖6A～6B可見，相較於習知的不具有表面塗層之基材（如圖中的Al ₂O ₃、SiC、及石英基材），根據本創作之實施例的各種測試樣品對於不同的蝕刻處理氣體（O ₂、CF ₄）皆呈現極佳的抗蝕刻性（亦即，具有極低的蝕刻速率）。具體而言，在圖6A之O ₂蝕刻處理氣體的情況下，其係以習知的不具有表面塗層之Al ₂O ₃基材作為參考基準，故將其蝕刻速率設定為1。與此參考基準相比之下，習知的不具有表面塗層之SiC及石英基材的蝕刻速率分別高達5.2及10.1。然而，根據本創作之實施例的各種測試樣品（Y ₂O ₃塗層、YF ₃塗層、YOF塗層）的蝕刻速率僅分別為0.13、0.12、及0.12。此外，在圖6B之CF ₄蝕刻處理氣體的情況下，同樣以習知的不具有表面塗層之Al ₂O ₃基材作為參考基準，故將其蝕刻速率設定為1。與此參考基準相比之下，習知的不具有表面塗層之SiC及石英基材的蝕刻速率分別高達5.63及10.25。然而，根據本創作之實施例的各種測試樣品（Y ₂O ₃塗層、YF ₃塗層、YOF塗層）的蝕刻速率僅分別為0.13、0.13、及0.12。因此，由圖6A～6B的電漿蝕刻測試結果清楚可見，根據本創作之實施例的各種測試樣品確實具有極佳的抗蝕刻性。 6A to 6B, various test samples according to the embodiments of the present invention are compared to conventional substrates having no surface coating (such as Al ₂ O ₃ , SiC, and quartz substrates in the drawings). Different etching treatment gases (O ₂ , CF ₄ ) exhibit excellent etch resistance (i.e., have an extremely low etching rate). Specifically, in the case of the O ₂ etching process gas of FIG. 6A, the conventional Al ₂ O ₃ substrate having no surface coating is used as a reference, so the etching rate is set to 1. In contrast to this reference, the etch rates of conventional SiC and quartz substrates without surface coating are as high as 5.2 and 10.1, respectively. However, the etching rates of various test samples (Y ₂ O ₃ coating, YF ₃ coating, YOF coating) according to the embodiments of the present invention were only 0.13, 0.12, and 0.12, respectively. Further, in the case of the CF ₄ etching treatment gas of Fig. 6B, the conventional Al ₂ O ₃ substrate having no surface coating layer is also used as a reference, so that the etching rate is set to 1. In contrast to this reference, the etch rates of conventional SiC and quartz substrates without surface coating are as high as 5.63 and 10.25, respectively. However, the etching rates of various test samples (Y ₂ O ₃ coating, YF ₃ coating, YOF coating) according to the embodiments of the present invention were only 0.13, 0.13, and 0.12, respectively. Therefore, it is clear from the results of the plasma etching test of FIGS. 6A to 6B that the various test samples according to the embodiments of the present invention do have excellent etching resistance.

經由以上詳細說明後，應可瞭解到本創作的各種特徵及優點。舉例而言，當電漿處理腔室中的邊緣環使用一段時間後，會因電漿環境的轟襲而損壞或失效，此時必需將處理設備停機，以進行維護或更換邊緣環。然而，這會影響產能，並且使生產成本增加。若在使用基於本創作之具有塗層的邊緣環結構之情況下，可將需要更換的邊緣環自電漿處理腔室取出，直接更換為預先完成表面塗層的相同邊緣環即可，這大幅縮短了設備的維護時間，並提高產能及降低生產成本。此外，由於本創作之邊緣環結構的優異抗蝕刻性及抗腐蝕性，不僅可使基材的使用壽命延長而降低邊緣環耗材使用的成本，同時也降低微粒污染的發生，進而提高製程良率。Through the above detailed description, various features and advantages of the present invention should be understood. For example, when the edge ring in the plasma processing chamber is used for a period of time, it may be damaged or failed due to the bombardment of the plasma environment. At this time, the processing equipment must be shut down for maintenance or replacement of the edge ring. However, this affects production capacity and increases production costs. If the edge ring structure based on the present invention is used, the edge ring to be replaced can be taken out from the plasma processing chamber and directly replaced with the same edge ring of the pre-finished surface coating. Reduce equipment maintenance time, increase productivity and reduce production costs. In addition, due to the excellent etching resistance and corrosion resistance of the edge ring structure of the present invention, not only the service life of the substrate is prolonged, but also the cost of the edge ring consumables is reduced, and the occurrence of particulate contamination is also reduced, thereby improving the process yield. .

雖然已就數個實施方式來敘述本創作，惟相關領域中具有通常技術者應可瞭解基於以上教示內容而能對本創作做許多修改及變化。相關領域中具有通常技術者亦應瞭解本創作涵蓋所有如此之修改、變化、添加、置換、及其均等者。因此，本新型創作並不限於這些實施方式，而是包括隨附之申請專利範圍的真正範圍及精神所包含之內容。Although the present invention has been described in terms of several embodiments, those of ordinary skill in the relevant art should understand that many modifications and variations can be made to the present invention based on the above teachings. Those of ordinary skill in the relevant art will also appreciate that the present invention encompasses all such modifications, variations, additions, substitutions, and equivalents. Therefore, the novel creations are not limited to the embodiments, but include the true scope and spirit of the accompanying claims.

1‧‧‧電漿處理腔室
3‧‧‧閘門
5‧‧‧靜電夾具
7‧‧‧邊緣環
9‧‧‧處理氣體入口
11‧‧‧氣體分佈器
13、15‧‧‧RF電源
17‧‧‧上電極
19‧‧‧下電極
21‧‧‧排氣閥
23‧‧‧排氣泵
25‧‧‧腔室內襯
31、33、35、37、39‧‧‧步驟
41‧‧‧基材
42‧‧‧表面塗層
43‧‧‧電極
44‧‧‧噴嘴
45‧‧‧電漿氣體
46‧‧‧塗層材料
47‧‧‧噴塗材料流
48‧‧‧冷卻水
51‧‧‧測試樣品
52‧‧‧晶圓載具1‧‧‧The plasma processing chamber
3‧‧ ‧ gate
5‧‧‧Electrostatic fixture
7‧‧‧Edge ring
9‧‧‧Processing gas inlet
11‧‧‧ gas distributor
13, 15‧‧‧RF power supply
17‧‧‧Upper electrode
19‧‧‧ lower electrode
21‧‧‧Exhaust valve
23‧‧‧Exhaust pump
25‧‧‧Interior lining
31, 33, 35, 37, 39 ‧ ‧ steps
41‧‧‧Substrate
42‧‧‧Surface coating
43‧‧‧Electrode
44‧‧‧Nozzles
45‧‧‧ Plasma gas
46‧‧‧ Coating materials
47‧‧‧ Spray material flow
48‧‧‧ cooling water
51‧‧‧ test samples
52‧‧‧ wafer carrier

現在將參考附圖並以舉例且非限制性的方式來詳細敘述本新型創作之實施方式。在閱讀以下詳細實施方式及圖式後，應更能理解本新型創作的特徵及優點。在圖式中，相同參考數字表示類似元件，其中：Embodiments of the novel creations will now be described in detail by way of example and not limitation of the accompanying drawings. The features and advantages of the novel creations will be better understood after reading the following detailed description and drawings. In the drawings, the same reference numerals indicate similar elements, in which:

圖1係根據本創作之一實施例之電漿處理腔室的示意圖。1 is a schematic illustration of a plasma processing chamber in accordance with an embodiment of the present invention.

圖2A～2C顯示根據本創作之一實施例的邊緣環，其中圖2A係其俯視圖，圖2B係其沿著D-D截線的橫剖面圖，及圖2C係其E部份的局部放大圖。2A-2C show an edge ring according to an embodiment of the present invention, wherein FIG. 2A is a plan view thereof, FIG. 2B is a cross-sectional view taken along line D-D, and FIG. 2C is a partial enlarged view of part E of FIG.

圖3係根據本創作之實施方式的表面塗層處理流程圖。3 is a flow chart of a surface coating process in accordance with an embodiment of the present invention.

圖4係大氣電漿熔射（APS）的示意圖。Figure 4 is a schematic illustration of atmospheric plasma spray (APS).

圖5係測試載具的示意圖，用以測試根據本創作之實施例之具有表面塗層的基材。Figure 5 is a schematic illustration of a test vehicle for testing a substrate having a surface coating in accordance with an embodiment of the present invention.

圖6A～6B顯示根據本創作之實施例之具有表面塗層的基材之電漿蝕刻速率測試結果，其中圖6A係處理氣體為O ₂100sccm的測試結果，及圖6B係處理氣體為CF ₄83sccm的測試結果。 6A-6B show plasma etch rate test results of a substrate having a surface coating according to an embodiment of the present invention, wherein FIG. 6A is a test result of a process gas of O ₂ 100 sccm, and FIG. 6B is a process gas of CF _{4 .} 83 sccm test results.

1‧‧‧電漿處理腔室 1‧‧‧The plasma processing chamber

3‧‧‧閘門 3‧‧ ‧ gate

5‧‧‧靜電夾具 5‧‧‧Electrostatic fixture

7‧‧‧邊緣環 7‧‧‧Edge ring

9‧‧‧處理氣體入口 9‧‧‧Processing gas inlet

11‧‧‧氣體分佈器 11‧‧‧ gas distributor

13‧‧‧RF電源 13‧‧‧RF power supply

15‧‧‧RF電源 15‧‧‧RF power supply

17‧‧‧上電極 17‧‧‧Upper electrode

19‧‧‧下電極 19‧‧‧ lower electrode

21‧‧‧排氣閥 21‧‧‧Exhaust valve

23‧‧‧排氣泵 23‧‧‧Exhaust pump

25‧‧‧腔室內襯 25‧‧‧Interior lining

Claims (12)

一種用於電漿處理之具有塗層的邊緣環，該邊緣環包含： 一基材，具有一表面；及 一表面塗層，位在該基材的表面上； 其中藉由噴砂的方式使該基材的表面粗糙化，再藉由大氣電漿熔射（APS，atmosphere plasma spray）的方式將塗層材料噴塗在粗糙化之該基材的表面上，以形成該表面塗層；且 其中該塗層材料係含釔材料或含鑭材料。A coated edge ring for plasma treatment, the edge ring comprising: a substrate having a surface; and a surface coating on the surface of the substrate; wherein the sandblasting is used The surface of the substrate is roughened, and the coating material is sprayed on the surface of the roughened substrate by means of atmospheric plasma spray (APS) to form the surface coating; The coating material is a bismuth-containing material or a bismuth-containing material. 如申請專利範圍第1項之用於電漿處理之具有塗層的邊緣環，其中該塗層材料係Y ₂O ₃、YF ₃、YOF（yttrium oxyfluoride，釔氧氟化物）、YAG（yttrium aluminum garnet，釔鋁石榴石）、或LZO（lanthanum zirconate，鋯酸鑭）。 A coated edge ring for plasma treatment according to claim 1, wherein the coating material is Y ₂ O ₃ , YF ₃ , YOF (yttrium oxyfluoride), YAG (yttrium aluminum) Garnet, yttrium aluminum garnet), or LZO (lanthanum zirconate, barium zirconate). 如申請專利範圍第1項之用於電漿處理之具有塗層的邊緣環，其中粗糙化之該基材的表面的粗糙度係大於2μm。A coated edge ring for plasma treatment according to claim 1, wherein the roughened surface of the substrate has a roughness greater than 2 μm. 如申請專利範圍第1項之用於電漿處理之具有塗層的邊緣環，其中粗糙化之該基材的表面的粗糙度係2～6μm。A coated edge ring for plasma treatment according to the first aspect of the invention, wherein the roughened surface of the substrate has a roughness of 2 to 6 μm. 如申請專利範圍第1項之用於電漿處理之具有塗層的邊緣環，其中該表面塗層的粗糙度係小於10μm。A coated edge ring for plasma treatment according to claim 1, wherein the surface coating has a roughness of less than 10 μm. 如申請專利範圍第1項之用於電漿處理之具有塗層的邊緣環，其中該表面塗層的厚度係5～300μm。A coated edge ring for plasma treatment according to claim 1, wherein the surface coating has a thickness of 5 to 300 μm. 一種用於電漿處理之具有塗層的邊緣環，該邊緣環包含： 一基材，具有一表面；及 一表面塗層，位在該基材的部份表面上； 其中先將遮罩設置在不欲塗佈該表面塗層之該基材的部份表面上，再藉由噴砂的方式使未被遮罩覆蓋之該基材的另一部份表面粗糙化，再藉由大氣電漿熔射（APS，atmosphere plasma spray）的方式將塗層材料噴塗在粗糙化之未被遮罩覆蓋之該基材的另一部份表面上，以在未被遮罩覆蓋之該基材的另一部份表面上形成該表面塗層；且 其中該塗層材料係含釔材料或含鑭材料。A coated edge ring for plasma treatment, the edge ring comprising: a substrate having a surface; and a surface coating disposed on a portion of the surface of the substrate; wherein the mask is first disposed On a portion of the surface of the substrate on which the surface coating is not to be applied, another portion of the surface of the substrate that is not covered by the mask is roughened by sand blasting, and then by atmospheric plasma A method of spraying (APS) to spray a coating material onto another surface of the substrate that is not covered by the roughening to cover the substrate that is not covered by the mask. The surface coating is formed on a portion of the surface; and wherein the coating material is a tantalum material or a tantalum containing material. 如申請專利範圍第7項之用於電漿處理之具有塗層的邊緣環，其中該塗層材料係Y ₂O ₃、YF ₃、YOF（yttrium oxyfluoride，釔氧氟化物）、YAG（yttrium aluminum garnet，釔鋁石榴石）、或LZO（lanthanum zirconate，鋯酸鑭）。 A coated edge ring for plasma treatment according to claim 7 wherein the coating material is Y ₂ O ₃ , YF ₃ , YOF (yttrium oxyfluoride), YAG (yttrium aluminum) Garnet, yttrium aluminum garnet), or LZO (lanthanum zirconate, barium zirconate). 如申請專利範圍第7項之用於電漿處理之具有塗層的邊緣環，其中粗糙化之該基材的表面的粗糙度係大於2μm。A coated edge ring for plasma treatment according to claim 7 wherein the roughened surface of the substrate has a roughness greater than 2 μm. 如申請專利範圍第7項之用於電漿處理之具有塗層的邊緣環，其中粗糙化之該基材的表面的粗糙度係2～6μm。A coated edge ring for plasma treatment according to claim 7 wherein the roughened surface of the substrate has a roughness of 2 to 6 μm. 如申請專利範圍第7項之用於電漿處理之具有塗層的邊緣環，其中該表面塗層的粗糙度係小於10μm。A coated edge ring for plasma treatment according to claim 7 wherein the surface coating has a roughness of less than 10 μm. 如申請專利範圍第7項之用於電漿處理之具有塗層的邊緣環，其中該表面塗層的厚度係5～300μm。A coated edge ring for plasma treatment according to claim 7 wherein the surface coating has a thickness of 5 to 300 μm.