TWM540390U - Metal frame with composite binding capacity - Google Patents
Metal frame with composite binding capacity Download PDFInfo
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- TWM540390U TWM540390U TW105215472U TW105215472U TWM540390U TW M540390 U TWM540390 U TW M540390U TW 105215472 U TW105215472 U TW 105215472U TW 105215472 U TW105215472 U TW 105215472U TW M540390 U TWM540390 U TW M540390U
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Description
本創作是有關一種金屬框架，尤指一種增加結合表面粗造化的具有複合物結合能力的金屬框架。The present invention relates to a metal frame, and more particularly to a metal frame having a composite bonding ability that increases the surface roughening.
半導體元件常見於現代電子產品，例如發光二極體(LED，light emitting diode)、電晶體、電容器、微控制器、微處理器、電荷耦合元件(CCD，charge-coupled device)、太陽能電池。半導體元件通常運用二個複雜的製程所製造，即前段(front-end)製造與後段(back-end)製造，各者涉及潛在為數百個步驟。前段製造涉及於半導體晶圓表面的複數個晶粒(die)之形成。各個晶粒典型為相同且含有其藉由電氣連接主動與被動構件所形成的電路。後段製造涉及自所完成的晶圓以單一化個別的晶粒且封裝該晶粒以提供結構支撐與環境隔離。Semiconductor components are commonly found in modern electronic products, such as light emitting diodes (LEDs), transistors, capacitors, microcontrollers, microprocessors, charge-coupled devices (CCDs), and solar cells. Semiconductor components are typically fabricated using two complex processes, front-end fabrication and back-end fabrication, each involving potentially hundreds of steps. The front stage manufactures the formation of a plurality of dies on the surface of the semiconductor wafer. Each die is typically identical and contains circuitry formed by active and passive components by electrical connections. Post-stage fabrication involves self-forming wafers to singulate individual dies and package the dies to provide structural support from the environment.
現有的後段製程中，金屬與複合物/化合物的結合本身就存在很大的困難性，尤其是遮蔽晶粒的蓋體(Lid)，若存在一平滑的表面很容易與上述複合物/化合物產生脫層(Delam)的現象，可靠度無法符合規定。因此如何克服異質材料間結合度而不會產生大小不同的縫隙，進而增加產品的信賴度而更具有優勢與競爭力，乃業界所致力的課題之一。In the existing back-end process, the combination of metal and composite/compound itself is very difficult, especially the cover of the grain (Lid), if a smooth surface is present, it is easy to produce with the above composite/compound. The phenomenon of delamination (Delam), the reliability can not meet the regulations. Therefore, how to overcome the degree of bonding between heterogeneous materials without generating gaps of different sizes, thereby increasing the reliability of products and having advantages and competitiveness, is one of the topics of the industry.
有鑒於此，本創作人遂針對上述現有技術，特潛心研究並配合學理的運用，盡力解決上述之問題點，即成為本創作人改良之目標。In view of this, the creator has made great efforts to solve the above problems by focusing on the above-mentioned prior art, and has devoted himself to the application of the theory, that is, the goal of the creator's improvement.
本創作目的之一，在於提供一種增加結合表面的粗造化，使產品在進行注膠製程時有效與結合表面結合並提升可靠度的具有複合物結合能力的金屬框架。One of the purposes of the present invention is to provide a metal frame having a composite bonding ability which increases the roughening of the bonding surface and enables the product to effectively combine with the bonding surface and improve the reliability during the injection molding process.
為達上述目的，本創作提供一種具有複合物結合能力的金屬框架，包括一框體。所述框體包含複數側框、與二相應側框連接的一內框架，以及設置於內框架的一吸附板，其中吸附板的一結合表面成形有一蝕刻紋路。To achieve the above object, the present invention provides a metal frame having a composite bonding capability, including a frame. The frame body comprises a plurality of side frames, an inner frame connected to the two corresponding side frames, and an adsorption plate disposed on the inner frame, wherein a bonding surface of the adsorption plate is formed with an etching line.
內框架更包含一第一內框及與第一內框垂直連接的一第二內框所構成，其中吸附板設置於第一內框及第二內框之間。吸附板的吸附表面的表面積較佳大於或等於3平方公釐(mm²)，以利吸盤(圖略)吸附。相對吸附表面的結合表面則透過蝕刻技術將其表面製成上述蝕刻紋路，以增加結合表面的粗造度而利於與例如膠體等複合物/化合物結合。The inner frame further comprises a first inner frame and a second inner frame vertically connected to the first inner frame, wherein the adsorption plate is disposed between the first inner frame and the second inner frame. The surface area of the adsorption surface of the adsorption plate is preferably greater than or equal to 3 square mm (mm2) to facilitate adsorption of the suction cup (not shown). The bonding surface of the opposite adsorption surface is etched to form the above-mentioned etched grain by an etching technique to increase the roughness of the bonding surface to facilitate bonding with a composite/compound such as a colloid.
透過蝕刻技術將結合表面製成的蝕刻紋路較佳為波浪狀，其形狀包含複數波浪凹點或凸點，且數量至少為3至4個。若結合表面的表面積更大，所述蝕刻紋路的數量會更多、粗造度更佳，因此結合複合物或化合物的效果得以提升且可靠度也更好。The etched lines formed by the bonding surface are preferably wavy by etching techniques, and the shape includes a plurality of wavy pits or bumps, and the number is at least 3 to 4. If the surface area of the bonding surface is larger, the number of etching lines will be more and the roughness is better, so that the effect of combining the composite or compound is improved and the reliability is also better.
有關本創作之詳細說明及技術內容，配合圖式說明如下，然而所附圖式僅提供參考與說明用，並非用來對本創作加以限制者。The detailed description and technical content of the present invention are described below with reference to the drawings, but the drawings are only for reference and explanation, and are not intended to limit the creation.
如圖1至圖3所示，本創作提供一種具有複合物結合能力的金屬框架100，包括一框體110。所述框體110的形狀較佳成矩形且為一體蝕刻製成。然而在其他不同的實施例中，框體100的形狀亦可為多邊形或其適合的形狀，並不限制。在此所述的蝕刻技術例如以正反面光照曝光技術，搭配上下噴液壓力差能將上述框體110蝕刻出高度介於0.35公釐至0.6公釐的產品。As shown in FIGS. 1 to 3, the present invention provides a metal frame 100 having a composite bonding capability, including a frame 110. The shape of the frame 110 is preferably rectangular and made by integral etching. However, in other different embodiments, the shape of the frame 100 may also be a polygon or a suitable shape thereof, and is not limited. The etching technique described herein can etch the above-described frame 110 with a height of between 0.35 mm and 0.6 mm, for example, by a front and back illumination exposure technique, in combination with the upper and lower spray pressure differences.
所述框體110還包含複數側框120、與二相應側框120連接的一內框架122，以及設置於內框架122的一吸附板150，其中吸附板150的一結合表面152成形有複數蝕刻紋路160。在本實施例中，內框架122較佳包含一第一內框130及與第一內框130垂直連接的一第二內框140所構成。然而在其他不同的實施例中，內框架122亦可以是單一或三根以上的多數內框所構成，並不限制。以下僅以第一內框130與第二內框140所構成的內框架122為例作說明。The frame body 110 further includes a plurality of side frames 120, an inner frame 122 connected to the two corresponding side frames 120, and an adsorption plate 150 disposed on the inner frame 122, wherein a bonding surface 152 of the adsorption plate 150 is formed with a plurality of etchings. Grain 160. In this embodiment, the inner frame 122 preferably includes a first inner frame 130 and a second inner frame 140 vertically connected to the first inner frame 130. However, in other different embodiments, the inner frame 122 may also be composed of a single or more than three inner frames, and is not limited. Hereinafter, only the inner frame 122 composed of the first inner frame 130 and the second inner frame 140 will be described as an example.
如圖1及圖2所示的實施例中，吸附板150設置於第一內框130及第二內框140之間，其中第一內框130分別連接二相對應的側框120，第二內框140則分別垂直的連接第一內框130與任一相應的側框120。In the embodiment shown in FIG. 1 and FIG. 2, the adsorption plate 150 is disposed between the first inner frame 130 and the second inner frame 140, wherein the first inner frame 130 is respectively connected to the corresponding side frame 120, and the second The inner frame 140 vertically connects the first inner frame 130 and any corresponding side frame 120, respectively.
該些側框120、第一內框130及第二內框140分別具有一底面114及相對底面114的一頂面116。在本實施例中，吸附板150還具有相對結合表面152設置的一吸附表面154，吸附表面152與頂面116平行設置，以便透過吸盤(圖略)吸附而移動至適合的位置，並進行相關製程。如圖3所示，吸附板150的厚度較佳小於第一內框130及第二內框140的高度，即吸附板150的厚度小於頂面116至底面114的高度，以便注膠製程時膠體(圖略)能夠填充於其中。The side frame 120 , the first inner frame 130 and the second inner frame 140 respectively have a bottom surface 114 and a top surface 116 opposite to the bottom surface 114 . In the present embodiment, the adsorption plate 150 further has a suction surface 154 disposed opposite to the bonding surface 152. The adsorption surface 152 is disposed in parallel with the top surface 116 so as to be moved to a suitable position by suction through the suction cup (not shown) and related. Process. As shown in FIG. 3, the thickness of the adsorption plate 150 is preferably smaller than the height of the first inner frame 130 and the second inner frame 140, that is, the thickness of the adsorption plate 150 is smaller than the height of the top surface 116 to the bottom surface 114, so as to be a colloid during the injection molding process. (figure omitted) can be filled in it.
本實施例的吸附板150的吸附表面154的表面積較佳大於或等於3平方公釐(mm²)，以利吸盤(圖略)吸附。相對吸附表面154的結合表面152則透過蝕刻技術將其表面製成上述蝕刻紋路160，以增加結合表面152的粗造度而利於與例如膠體等複合物/化合物結合。The surface area of the adsorption surface 154 of the adsorption plate 150 of the present embodiment is preferably greater than or equal to 3 square mm (mm2) to facilitate adsorption of the suction cup (not shown). The bonding surface 152 of the adsorption surface 154 is etched to form the surface of the bonding etch 160 to increase the roughness of the bonding surface 152 to facilitate bonding with a composite/compound such as a colloid.
此外，透過蝕刻技術將結合表面152製成的蝕刻紋路160較佳包含複數波浪凹點或凸點，其形狀較佳為波浪狀且數量至少為3至4個。然而在其他不同的實施例中，若結合表面152的表面積更大，所述蝕刻紋路160的數量會更多、粗造度更佳，因此結合複合物或化合物的效果得以提升且可靠度也更好。In addition, the etched pattern 160 formed by the bonding surface 152 preferably includes a plurality of wavy pits or bumps, preferably of a wavy shape and having a number of at least 3 to 4. However, in other different embodiments, if the surface area of the bonding surface 152 is larger, the number of the etching lines 160 will be more and the roughness is better, so that the effect of combining the composite or compound is improved and the reliability is also improved. it is good.
如圖4及圖5所示，每一側框120、第一內框130及第二內框140分別圍成複數圍合區域112且每一側框120、第一內框130及第二內框140分別分佈有複數溝槽170。在封裝作業中，提供具有一或多個半導體元件182的一基板180。吸取吸附板150，將各圍合區域112相對各半導體元件182蓋設，其中底面126的尺寸較佳小於頂面128的尺寸，用以抵觸基板180表面。As shown in FIG. 4 and FIG. 5 , each of the side frames 120 , the first inner frame 130 , and the second inner frame 140 respectively encloses a plurality of enclosure regions 112 and each of the side frames 120 , the first inner frame 130 , and the second inner portion Block 140 is provided with a plurality of trenches 170, respectively. In a packaging operation, a substrate 180 having one or more semiconductor components 182 is provided. The suction plate 150 is sucked, and each of the enclosed regions 112 is covered with respect to each of the semiconductor elements 182. The size of the bottom surface 126 is preferably smaller than the size of the top surface 128 for contacting the surface of the substrate 180.
上述的半導體元件182例如為晶粒、射頻(RF，radio frequency)無線通訊裝置、積體被動元件(IPD，integrated passive device)或其他適合元件，其中IPD包括電阻器、電容器或電感器等。基板180則例如為電路板等。本實施例的各溝槽170能夠使例如膠體等複合物穿過其中並填充於結合表面152及各圍合區域112中。The semiconductor element 182 described above is, for example, a die, a radio frequency (RF) wireless communication device, an integrated passive device (IPD), or other suitable components, wherein the IPD includes a resistor, a capacitor, an inductor, and the like. The substrate 180 is, for example, a circuit board or the like. Each of the grooves 170 of the present embodiment can pass a composite such as a colloid therethrough and fill the bonding surface 152 and each of the enclosing regions 112.
以下進一步說明本實施例的金屬框架100封裝的實施步驟。請一併參考圖6及圖7所示，灌注一膠體190於各圍合區域112及各半導體元件182之間；漸鍍一金屬層200於各側框120、第一內框130、第二內框140的頂面116及各側框120的外側壁面。The implementation steps of the metal frame 100 package of the present embodiment are further explained below. Referring to FIG. 6 and FIG. 7 together, a colloid 190 is interposed between each of the enclosing regions 112 and each of the semiconductor elements 182; a metal layer 200 is gradually plated on each of the side frames 120, the first inner frame 130, and the second The top surface 116 of the inner frame 140 and the outer side wall surface of each side frame 120.
詳細地，當框體110的各圍合區域112相對罩蓋基板180的每一半導體元件182後，即可進行灌膠作業。填充一膠體190於各半導體元件182及各圍合區域112之間。此時，膠體190能夠穿過並流通各溝槽170及結合表面152。由於結合表面152具有該些蝕刻紋路160而能夠增加與膠體190的結合能力。待膠體190凝固後，漸鍍一金屬層200於凝固的膠體190、該些側框120、第一內框130、第二內框140的頂面116和該些側框120的外側壁面上，以達到防止電磁干擾(EMI)的屏蔽效果。上述的金屬層200材料例如可為銅、銀、不銹鋼、鎳其中之一。In detail, after each of the enclosed regions 112 of the frame 110 is opposed to each of the semiconductor elements 182 of the cover substrate 180, the filling operation can be performed. A colloid 190 is filled between each of the semiconductor elements 182 and each of the enclosing regions 112. At this time, the colloid 190 can pass through and circulate the respective grooves 170 and the bonding surface 152. Since the bonding surface 152 has the etched lines 160, the ability to bond with the colloid 190 can be increased. After the colloid 190 is solidified, a metal layer 200 is gradually plated on the solidified colloid 190, the side frames 120, the first inner frame 130, the top surface 116 of the second inner frame 140, and the outer side walls of the side frames 120. To achieve the shielding effect of preventing electromagnetic interference (EMI). The material of the metal layer 200 described above may be, for example, one of copper, silver, stainless steel, and nickel.
由於金屬層200的屏蔽效果，即可避免上述封裝的半導體元件182產生電磁干擾(EMI)、射頻干擾(RFI)或與其他的元件間干擾，例如串音(cross-talk)等。再者，本實施例以蝕刻技術對吸附板150的結合表面152進行蝕刻而產生多數蝕刻紋路160。因此透過增加結合表面152的粗造化，使產品在進行注膠製程時能有效與結合表面152結合並提升可靠度。Due to the shielding effect of the metal layer 200, the semiconductor component 182 of the package described above can be prevented from generating electromagnetic interference (EMI), radio frequency interference (RFI), or interference with other components, such as cross-talk. Furthermore, in this embodiment, the bonding surface 152 of the adsorption plate 150 is etched by an etching technique to generate a plurality of etching lines 160. Therefore, by increasing the roughening of the bonding surface 152, the product can effectively combine with the bonding surface 152 and improve the reliability during the injection molding process.
綜上所述，本文於此所揭示的實施例應被視為用以說明本創作，而非用以限制本創作。本創作的範圍應由後附申請專利範圍所界定，並涵蓋其合法均等物，並不限於先前的描述。In summary, the embodiments disclosed herein are to be considered as illustrative of the present invention and are not intended to limit the present invention. The scope of this creation is defined by the scope of the appended patent application and covers its legal equivalents and is not limited to the foregoing description.
100‧‧‧金屬框架100‧‧‧Metal frame
110‧‧‧框體110‧‧‧ frame
112‧‧‧圍合區域112‧‧‧ enclosed area
114‧‧‧底面114‧‧‧ bottom
116‧‧‧頂面116‧‧‧ top surface
120‧‧‧側框120‧‧‧ side frame
122‧‧‧內框架122‧‧‧Internal framework
130‧‧‧第一內框130‧‧‧ first inner frame
140‧‧‧第二內框140‧‧‧second inner frame
150‧‧‧吸附板150‧‧‧Adsorption plate
152‧‧‧結合表面152‧‧‧ bonding surface
154‧‧‧吸附表面154‧‧‧Adsorption surface
160‧‧‧蝕刻紋路160‧‧‧etched lines
170‧‧‧溝槽170‧‧‧ trench
180‧‧‧基板180‧‧‧Substrate
182‧‧‧半導體元件182‧‧‧Semiconductor components
190‧‧‧膠體190‧‧‧colloid
200‧‧‧金屬層200‧‧‧ metal layer
圖1為繪示本創作具有複合物結合能力的金屬框架的立體圖。FIG. 1 is a perspective view showing a metal frame having a composite bonding ability in the present invention.
圖2為圖1的部分放大圖。Figure 2 is a partial enlarged view of Figure 1.
圖3為繪示本創作吸附板的部分放大剖視圖。Fig. 3 is a partially enlarged cross-sectional view showing the present adsorption plate.
圖4為繪示本創作具有複合物結合能力的金屬框架組裝於基板的分解圖。FIG. 4 is an exploded view showing the assembly of the metal frame having the composite bonding ability of the present invention on the substrate.
圖5為繪示本創作具有複合物結合能力的金屬框架組裝於基板的立體圖。FIG. 5 is a perspective view showing the metal frame of the present invention having a composite bonding capability assembled on a substrate.
圖6為圖5的剖視圖。Figure 6 is a cross-sectional view of Figure 5.
圖7為圖6填充膠體後漸鍍的剖視圖。Figure 7 is a cross-sectional view of the progressive plating of Figure 6 after filling the gel.
100‧‧‧金屬框架 100‧‧‧Metal frame
114‧‧‧底面 114‧‧‧ bottom
116‧‧‧頂面 116‧‧‧ top surface
120‧‧‧側框 120‧‧‧ side frame
130‧‧‧第一內框 130‧‧‧ first inner frame
150‧‧‧吸附板 150‧‧‧Adsorption plate
152‧‧‧結合表面 152‧‧‧ bonding surface
154‧‧‧吸附表面 154‧‧‧Adsorption surface
160‧‧‧蝕刻紋路 160‧‧‧etched lines
170‧‧‧溝槽 170‧‧‧ trench
Claims (10)
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| TW105215472U TWM540390U (en) | 2016-10-12 | 2016-10-12 | Metal frame with composite binding capacity |
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| TW105215472U TWM540390U (en) | 2016-10-12 | 2016-10-12 | Metal frame with composite binding capacity |
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| TWM540390U true TWM540390U (en) | 2017-04-21 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10279205B2 (en) | 2017-05-19 | 2019-05-07 | Yoke Industrial Corp. | Fall protection device |
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2016
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10279205B2 (en) | 2017-05-19 | 2019-05-07 | Yoke Industrial Corp. | Fall protection device |
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