TWM521263U

TWM521263U - Support pillar

Info

Publication number: TWM521263U
Application number: TW104214023U
Authority: TW
Inventors: 楊正光; 陳健章; 梁貽德
Original assignee: 風起科技股份有限公司
Priority date: 2015-08-28
Filing date: 2015-08-28
Publication date: 2016-05-01

Description

支撐柱 Support column

本新型係關於一種半導體，特別是關於一種支撐柱。 The present invention relates to a semiconductor, and more particularly to a support column.

運用微機電(MEMS)技術所製作出來的電容板應用範圍十分廣泛，可以使用在慣性感測器、聲音感測器、流體感測器、觸覺感測器、壓力感測器、致動器等。為了要達到很好的感測效果，常常運用到如梳狀電極、質量塊的製作以達到較好的感測靈敏度。一般來說，運用微機電製程所製作出來的電容板與標準的互補式金氧半導體是完全不相同的。目前，運用微機電技術所製作出來的電容板，相對上成本也比較高。運用標準的金屬氧化半導體製程(CMOS)，同樣可製作出電容板的架構，其價格相對便宜。 Capacitor plates fabricated using microelectromechanical (MEMS) technology are used in a wide range of applications, such as inertial sensors, sound sensors, fluid sensors, tactile sensors, pressure sensors, actuators, etc. . In order to achieve a good sensing effect, it is often applied to the production of comb electrodes and masses to achieve better sensing sensitivity. In general, capacitive plates fabricated using MEMS processes are completely different from standard complementary MOSs. At present, the capacitance board made by using MEMS technology is relatively high in cost. Using a standard metal oxide semiconductor process (CMOS), the capacitor board architecture can also be fabricated at a relatively low price.

無論是運用MEMS製程或CMOS製程所製作出來的電容板，當中的必要結構就是可動元件的部分。此可動元件都需要有一定的支撐力，讓可動元件可以穩固地產生預期的物理變化(如：形變或位移等)，並於物理變化的過程產生所需要的感應訊號。而此支撐力的提供方式，其中一種就是採用支撐柱的架構。 Whether it is a capacitive plate fabricated using a MEMS process or a CMOS process, the necessary structure is part of the movable component. The movable element needs to have a certain supporting force, so that the movable element can stably produce the expected physical change (such as deformation or displacement), and generate the required sensing signal in the process of physical change. One way to provide this support is to use a support column structure.

目前，無論是MEMS或CMOS製程所製作出來的支撐柱，都是單純的一個穿孔金屬柱再包覆氧化層的架構，其強度尚可。但若能設計出尺度相當，但強度更佳的支撐住，將可有效提高可動元件的穩固性、延長使用壽命等。此為可動元件設計相當重要的一環。 At present, the support columns made by MEMS or CMOS processes are simply a perforated metal column and then coated with an oxide layer structure, and the strength is acceptable. However, if a comparable scale but better strength support can be designed, the stability of the movable element can be effectively improved. Extend the service life, etc. This is a very important part of the design of the movable components.

鑒於以上習知技術的問題，本新型針對現有技術的上述缺陷，提供一種支撐柱，可達到抵抗強烈震動的技術功效。 In view of the above problems of the prior art, the present invention provides a support column for the above-mentioned drawbacks of the prior art, and can achieve the technical effect of resisting strong vibration.

本新型提供一種支撐柱，形成於一可動薄膜下方，用以支撐該可動薄膜，包含：複數個第一微形金屬柱、基底金屬連接柱層與第一氧化包覆層。其中，第一微形金屬柱形成於可動薄膜下方，並與可動薄膜形成金屬導接；基底金屬連接柱層形成於第一微形金屬柱下方，與第一微形金屬柱導接；第一氧化包覆層完全或部分包覆第一微形金屬柱而使第一微形金屬柱與空氣絕緣而可使支撐柱形成柱狀。 The present invention provides a support column formed under a movable film for supporting the movable film, comprising: a plurality of first micro-shaped metal pillars, a base metal connecting pillar layer and a first oxide coating layer. The first micro-shaped metal pillar is formed under the movable film and forms a metal guiding connection with the movable film; the base metal connecting pillar layer is formed under the first micro-shaped metal pillar and is in contact with the first micro-shaped metal pillar; The oxidized coating layer completely or partially coats the first micro-shaped metal column to insulate the first micro-shaped metal column from the air to form a columnar column.

本新型另提供一種支撐柱，包含：複數金屬層柱體；及至少一層絕緣層柱體；其中，相鄰之兩個該金屬層柱體由複數個微形金屬柱連接，且該至少一層絕緣層柱體完全或部分包覆全部或部分該些微形金屬柱體。 The present invention further provides a support column comprising: a plurality of metal layer cylinders; and at least one insulating layer cylinder; wherein two adjacent metal layer pillars are connected by a plurality of micro-shaped metal pillars, and the at least one layer is insulated The layer cylinders completely or partially coat all or part of the micro-shaped metal cylinders.

為讓本創作之上述和其他目的、特徵、和優點能更明顯易懂，下文特舉數個較佳實施例，並配合所附圖式，作詳細說明如下(實施方式)。 The above and other objects, features, and advantages of the present invention will become more apparent and understood.

1‧‧‧基板 1‧‧‧Substrate

11‧‧‧銲墊層 11‧‧‧pad layer

11-1、11-2、11-3、11-4、11-5、11-6‧‧‧銲墊 11-1, 11-2, 11-3, 11-4, 11-5, 11-6‧‧‧ solder pads

12‧‧‧連接線路層 12‧‧‧Connecting circuit layer

13‧‧‧頂面金屬連結柱層 13‧‧‧Top metal joint pillar

13-1、13-2、13-3、13-4、13-5、13-6‧‧‧銲墊 13-1, 13-2, 13-3, 13-4, 13-5, 13-6‧‧‧ pads

13O‧‧‧第三穿孔 13O‧‧‧ third perforation

14‧‧‧第三氧化包覆層 14‧‧‧ Third Oxidation Coating

21‧‧‧連接柱 21‧‧‧Connecting column

23‧‧‧第二微形金屬柱 23‧‧‧Second micro-shaped metal column

24‧‧‧第二氧化包覆層 24‧‧‧Second oxide coating

31‧‧‧銲墊層 31‧‧‧ solder pad

32‧‧‧連接線路層 32‧‧‧Connecting circuit layer

33‧‧‧葉片結構 33‧‧‧ blade structure

33O‧‧‧第一穿孔 33O‧‧‧first perforation

35‧‧‧內環支撐型集音薄膜 35‧‧‧ Inner ring supported sound collecting film

36‧‧‧懸浮梁臂 36‧‧‧suspension beam arm

37‧‧‧側邊金屬層 37‧‧‧Side metal layer

38‧‧‧懸浮支點 38‧‧‧suspension pivot

41‧‧‧連接柱 41‧‧‧Connecting column

43‧‧‧第一微形金屬柱 43‧‧‧First micro-shaped metal column

44‧‧‧第一氧化包覆層 44‧‧‧First Oxidation Coating

51‧‧‧銲墊層 51‧‧‧pad layer

52‧‧‧連接線路層 52‧‧‧Connecting circuit layer

53‧‧‧基底金屬連結柱層 53‧‧‧Base metal joint pillar

53O‧‧‧第二穿孔 53O‧‧‧Second perforation

54‧‧‧基底金屬氧化層 54‧‧‧Base metal oxide layer

55‧‧‧基底金屬層 55‧‧‧Base metal layer

61‧‧‧連接柱 61‧‧‧Connecting column

63‧‧‧第三微形金屬柱 63‧‧‧The third micro-shaped metal column

64‧‧‧第四氧化包覆層 64‧‧‧fourth oxide coating

71‧‧‧銲墊層 71‧‧‧pad layer

72‧‧‧底部金屬連接柱層 72‧‧‧Bottom metal connecting pillar

73‧‧‧第一金屬層 73‧‧‧First metal layer

73O‧‧‧穿孔 73O‧‧‧Perforation

91‧‧‧保護層 91‧‧‧Protective layer

92‧‧‧保護層 92‧‧‧Protective layer

100‧‧‧支撐柱 100‧‧‧Support column

201‧‧‧連續溝槽 201‧‧‧Continuous trench

202‧‧‧空間 202‧‧‧ Space

203‧‧‧環狀溝槽 203‧‧‧Round groove

205‧‧‧穿孔 205‧‧‧Perforation

300‧‧‧銲墊區 300‧‧‧pad area

B-B‧‧‧剖面線 B-B‧‧‧ hatching

C-C‧‧‧剖面線 C-C‧‧‧ hatching

第1A、1B圖，其為本新型支撐柱所應用的可動元件感測晶片的一實施例之剖面圖與上視圖。 1A and 1B are cross-sectional and top views of an embodiment of a movable element sensing wafer to which the novel support column is applied.

第2A~2D圖，其為第1A、1B圖的實施例中，本新型之支撐柱結構之一具體實施例。 2A-2D, which is a specific embodiment of the support column structure of the present invention in the embodiment of Figs. 1A and 1B.

第3A~3D圖，其為第1A、1B圖的實施例中，本新型之支撐柱結構之另一具體實施例。 3A-3D, which is another embodiment of the support post structure of the present invention in the embodiment of Figs. 1A and 1B.

第4A~4D圖，其為第1A、1B圖的實施例中，本新型之支撐柱結構之另一具體實施例。 4A to 4D, which are another embodiment of the support column structure of the present invention in the embodiment of Figs. 1A and 1B.

第5A~5D圖，其為第1A、1B圖的實施例中，本新型之支撐柱結構之另一具體實施例。 5A-5D, which is another embodiment of the support post structure of the present invention in the embodiment of Figs. 1A and 1B.

第6A~6C圖，其為第1A、1B圖的實施例中，本新型之支撐柱結構之另一具體實施例。 6A-6C, which is another embodiment of the support post structure of the present invention in the embodiment of Figs. 1A and 1B.

第7A~7C圖，其為第1A、1B圖的實施例中，本新型之支撐柱結構之另一具體實施例。 7A-7C, which is another embodiment of the support post structure of the present invention in the embodiment of Figs. 1A and 1B.

第8A、8B圖，其為無帽蓋結構的本新型支撐柱所應用的可動元件感測晶片的一實施例之剖面圖與上視圖。 8A and 8B are cross-sectional and top views of an embodiment of a movable element sensing wafer to which the novel support post of the capless structure is applied.

第9A~9C圖，其為第8A、8B圖的實施例中，本新型之支撐柱結構之另一具體實施例。 9A-9C, which is another embodiment of the support post structure of the present invention in the embodiment of Figs. 8A and 8B.

第10A~10C圖，其為第8A、8B圖的實施例中，本新型之支撐柱結構之另一具體實施例。 10A-10C, which is another embodiment of the support post structure of the present invention in the embodiment of Figs. 8A and 8B.

第11A~11C圖，其為第8A、8B圖的實施例中，本新型之支撐柱結構之另一具體實施例。 11A-11C, which is another embodiment of the support post structure of the present invention in the embodiment of Figs. 8A and 8B.

第12A、12B圖，其為無帽蓋結構的本新型的又一實施例。 12A, 12B, which is yet another embodiment of the present invention without a cap structure.

第13A~13C圖，其為第12A、12B圖的實施例中，本新型之支撐柱結構之另一具體實施例。 Figures 13A-13C are another embodiment of the support post structure of the present invention in the embodiment of Figures 12A and 12B.

第14A~14C圖，其為第12A、12B圖的實施例中，本新型之支撐柱結構之另一具體實施例。 Figures 14A-14C are another embodiment of the support post structure of the present invention in the embodiment of Figures 12A and 12B.

第15A~15C圖，其為第12A、12B圖的實施例中，本新型之支撐柱結構之另一具體實施例。 15A-15C, which is another embodiment of the support post structure of the present invention in the embodiment of Figs. 12A and 12B.

第16A~16C圖，其為第12A、12B圖的實施例中，本新型之支撐柱結構之另一具體實施例。 16A-16C, which is the support column structure of the present invention in the embodiment of FIGS. 12A and 12B Another specific embodiment.

第17A~17C圖，其為第12A、12B圖的實施例中，本新型之支撐柱結構之另一具體實施例。 17A-17C, which is another embodiment of the support post structure of the present invention in the embodiment of Figs. 12A and 12B.

第18A~18C圖，其為第12A、12B圖的實施例中，本新型之支撐柱結構之另一具體實施例。 Figures 18A-18C are another embodiment of the support post structure of the present invention in the embodiment of Figures 12A and 12B.

第19A~19C圖，其為本新型之支撐柱結構之排列方式的數個實施例。 Figures 19A-19C are several embodiments of the arrangement of the novel support column structures.

本新型運用了類似鋼筋混擬土的概念，運用以氧化層包覆多個微形金屬柱，並作為可動元件的導電層支撐且連接的結構，來製作出強化CMOS製程或者MEMS製程所製作出來的支撐柱之結構強度，讓未來的支撐柱，都具有優於目前單一材料的金屬結構強度的特性。 The novel uses a concept similar to reinforced concrete, which is made by coating a plurality of micro-shaped metal pillars with an oxide layer and supporting and connecting the conductive layers of the movable components to produce a reinforced CMOS process or a MEMS process. The structural strength of the support columns allows future support columns to have properties superior to those of current single materials.

請參考第1A圖，本新型的支撐柱的第一具體實施例的剖面圖，此實施例為運用四層金屬層製作於基板1上，來製作CMOS可動元件的實施例，並於第三層製作可動元件，第四層製作支撐柱的帽蓋結構。 Please refer to FIG. 1A for a cross-sectional view of a first embodiment of the support post of the present invention. This embodiment is an embodiment of manufacturing a CMOS movable element by using a four-layer metal layer on the substrate 1 and on the third layer. The movable element is made, and the fourth layer is used to make the cap structure of the support column.

第一層金屬層可製作半導體元件層72，如電晶體、電阻、電容等，也就是感測電路的部分，以及銲墊區300所需的銲墊層71。 The first metal layer can be formed into a semiconductor device layer 72, such as a transistor, a resistor, a capacitor, etc., that is, a portion of the sensing circuit, and a pad layer 71 required for the pad region 300.

第二層金屬層可製作可動元件所需的基底金屬層55，以及旁側的連接線路層52，還有，銲墊300所需的銲墊層51。介於第一層金屬層與第二層金屬層的穿孔層61則為導通兩層之間線路的橋樑。而在其中則有絕緣層(氧化層)佈滿其間。 The second metal layer can be used to form the base metal layer 55 required for the movable element, as well as the side connection layer 52, and the pad layer 51 required for the pad 300. The perforated layer 61 between the first metal layer and the second metal layer is a bridge that conducts a line between the two layers. In this case, an insulating layer (oxide layer) is interspersed therebetween.

第三層金屬層則為可動元件層的部分，請同時參考第1B圖，其為一內環支撐型集音薄膜35的實施例(其為運用於麥克風的實施例)，其包含了懸樑臂，同時，旁側的連接線路層32(第1B圖未顯示本層)，還有，銲墊區300所需的銲墊層31(第1B圖皆未顯示本層)也配置於同一層。在此實施例中，同步於可動元件層旁配置了側邊金屬層37(其與內環支撐型集音薄膜由環狀溝槽203所區隔)，以加強可動元件的電容感度。 The third metal layer is a portion of the movable element layer. Please refer to FIG. 1B at the same time, which is an embodiment of an inner ring supporting type sound collecting film 35 (which is an embodiment applied to a microphone), which comprises a cantilever arm At the same time, the side connection layer 32 (the layer is not shown in FIG. 1B), and the pad layer 31 (not shown in FIG. 1B) required for the pad region 300 are also disposed on the same layer. here In the embodiment, a side metal layer 37 (which is separated from the inner ring supporting type sound collecting film by the annular groove 203) is disposed adjacent to the movable element layer to enhance the capacitive sensitivity of the movable element.

第四層金屬層則為專門為了帽蓋而製作，可增加支撐柱的強度，而其包含了頂面金屬連結柱層13、連接線路層12，還有，銲墊區300所需的銲墊層11也配置於同一層。 The fourth metal layer is specially made for the cap to increase the strength of the support column, and includes the top metal joint pillar layer 13, the connection circuit layer 12, and the pad required for the pad region 300. Layer 11 is also arranged on the same layer.

銲墊區300的各個銲墊層之間，皆由連接柱所連接，分別為連接柱21、41、61。 Each of the pad layers of the pad region 300 is connected by a connecting post, which is a connecting post 21, 41, 61, respectively.

在第1B圖的實施例中，銲墊區300由晶片上方觀之，可看到六個銲墊11-1、11-2、11-3、11-4、11-5、11-6，其由保護層91所區隔。 In the embodiment of FIG. 1B, the pad region 300 is viewed from above the wafer, and six pads 11-1, 11-2, 11-3, 11-4, 11-5, 11-6 are visible. It is separated by a protective layer 91.

內環支撐型集音薄膜35的實施例運用了葉片結構33，在第1B圖中有4個，葉片結構33排列為環狀，每個葉片結構33係各由一連續溝槽201定義，四個連續溝槽201定義出膜臂井(井狀膜臂結構)。葉片結構33設計為等長L形狀的箝制樑臂構造，兩個支撐柱配置於等長L形狀的箝制樑臂的尾端，箝制樑臂的連接處形成懸浮梁臂36。葉片結構33彼此間隔出至少一中央走道，中央走道貫穿內環支撐型集音薄膜35之中心並構成一懸浮支點38。此外，整個內環支撐型集音薄膜35，包括葉片結構33與中央走道、懸浮支點38的部分，皆透過均勻分布的穿孔205來讓內環支撐型集音薄膜35可執行懸浮的等向性蝕刻製程。 The embodiment of the inner ring supporting type sound collecting film 35 employs the blade structure 33, which has four in the first FIG. B, the blade structures 33 are arranged in a ring shape, and each of the blade structures 33 is defined by a continuous groove 201, four A continuous trench 201 defines a membrane arm well (well-like membrane arm structure). The blade structure 33 is designed as an equal-length L-shaped clamp beam arm configuration, the two support columns being disposed at the trailing end of the equal-length L-shaped clamp beam arms, and the junction of the clamp beam arms forming the suspension beam arms 36. The blade structures 33 are spaced apart from each other by at least one central walkway that extends through the center of the inner ring support type sound collecting film 35 and constitutes a suspension fulcrum 38. In addition, the entire inner ring supporting type sound collecting film 35, including the blade structure 33 and the central walkway and the portion of the suspension fulcrum 38, are transmitted through the uniformly distributed through holes 205 to allow the inner ring supporting type sound collecting film 35 to perform suspension isotropic. Etching process.

再回頭參考第1A圖，本實施例的支撐柱100分別從第一層金屬層開始，一直到第四層金屬層。結構上，此為最複雜的支撐柱100結構，分別包含了：支撐柱本體、帽蓋與底柱。支撐柱本體由複數個第一微形金屬柱43、基底金屬連結柱層53、第一氧化包覆層44所構成。帽蓋由至少一個第二微形金屬柱23、頂面金屬連接柱層13與第二氧化包覆層24(1A圖未顯示本層)所構成。底柱由至少一個第三微形金屬柱63、底部金屬連接柱層72、第四氧化包覆層64所構成。 Referring back to FIG. 1A, the support post 100 of the present embodiment starts from the first metal layer and continues to the fourth metal layer. Structurally, this is the most complex support column 100 structure, which comprises: a support column body, a cap and a bottom column. The support column body is composed of a plurality of first micro-shaped metal posts 43, a base metal connecting pillar layer 53, and a first oxide coating layer 44. The cap is composed of at least one second micro-shaped metal post 23, a top metal-connecting pillar layer 13, and a second oxide-clad layer 24 (not shown in FIG. 1A). The bottom column is connected by at least one third micro-shaped metal column 63 and a bottom metal The column layer 72 and the fourth oxide coating layer 64 are formed.

其中，支撐柱本體的複數個第一微形金屬柱43形成於葉片結構33之下而構成金屬連結性支撐，並且，藉由支撐柱本體的金屬與氧化包覆層所構成的混成強化結構，讓葉片結構33有良好的支撐。再藉由帽蓋的第二微形金屬柱23與頂面金屬連結柱層13的金屬連接性支撐，並藉由帽蓋的金屬與氧化包覆層的混成強化結構，形成帽蓋與支撐柱本體對葉片結構33上下夾持的結構，讓葉片結構33可獲得雙重的優異支撐特性。如此，可讓葉片結構33所構成對內環支撐型集音薄膜35整體支撐的穩固性增強，進而延長內環支撐型集音薄膜35的壽命，並讓其聲音響應持續穩定化。 Wherein, the plurality of first micro-shaped metal pillars 43 of the support column body are formed under the blade structure 33 to form a metal-bonding support, and the hybrid reinforcing structure formed by the metal of the support pillar body and the oxidized coating layer is The blade structure 33 is well supported. Then, the second micro-shaped metal pillar 23 of the cap is supported by the metal of the top metal-bonding pillar layer 13, and the cap and the supporting pillar are formed by the reinforcing structure of the metal of the cap and the oxidized coating layer. The structure in which the body is sandwiched above and below the blade structure 33 allows the blade structure 33 to obtain double excellent support characteristics. In this way, the stability of the inner ring supporting type sound collecting film 35 as a whole can be enhanced by the blade structure 33, and the life of the inner ring supporting type sound collecting film 35 can be prolonged, and the sound response can be continuously stabilized.

帽蓋為選擇性配置，可進一步強化支撐柱的強度。而底柱同樣為選擇性配置，可協助將訊號進行傳導，同樣也可採取與帽蓋或支撐柱本體相同的結構。 The cap is optionally configured to further strengthen the strength of the support column. The bottom column is also selectively configured to assist in conducting the signal, as well as the same structure as the cap or support column body.

在第1A、1B圖的實施例中，可動元件係以內環支撐型集音薄膜35來實現。可以發現，內環支撐型集音薄膜35與基底金屬層55形成一個簍空的空間，而側邊金屬層37也與基底金屬層55形成一個簍空的空間202，兩者合而為一，讓內環支撐型集音薄膜35的共振腔變大，感度可增加。 In the embodiment of Figs. 1A and 1B, the movable element is realized by the inner ring supporting type sound collecting film 35. It can be found that the inner ring supporting type sound collecting film 35 forms a hollow space with the base metal layer 55, and the side metal layer 37 also forms a hollow space 202 with the base metal layer 55, which is one. The resonance cavity of the inner ring supporting type sound collecting film 35 is made larger, and the sensitivity can be increased.

支撐柱的微形金屬柱以及其與各個金屬層的連接方式，以下將分別說明之。請參考第2A~2D圖，其為第1A、1B圖的實施例中，本新型之支撐柱結構之一具體實施例，第2A、2B圖為本實施例中的分層結構圖，第2C、2D圖為本實施例中，沿B-B、C-C線之剖面圖。 The micro-shaped metal posts of the support columns and their connection to the respective metal layers are described below. Please refer to FIG. 2A~2D, which is a specific embodiment of the support column structure of the present invention in the embodiment of FIGS. 1A and 1B, and FIG. 2A and FIG. 2B are the hierarchical structure diagram of the embodiment, 2C. 2D is a cross-sectional view taken along lines BB and CC in the present embodiment.

第2A~2D圖揭露了完整的支撐柱結構，其中，最上層的保護層92，可為半導體製程所熟習的厚膜光阻，或氧化層。頂面金屬連接柱層13的結構為四個第三穿孔13O，並且，由第三氧化包覆層14所包覆。在頂面金屬連接柱層13下方為五個第二微形金屬柱23，其由第二氧化包覆層 24所包覆。在其下為葉片結構33與第一穿孔33O。接著，其下為五個第一微形金屬柱43，並由第一氧化包覆層44所包覆。接著，其下為基底金屬層連接柱53的部分，其由五個對應的基底金屬柱所構成，並由基底金屬氧化層54所包覆。在往下層，則由五個第三微形金屬柱63以及第四氧化包覆層64所包覆而構成。最下面一層則為導線層，其為第一金屬層73的主要結構，也就是，由此將可動元件(也就是內環支撐型集音薄膜35)所產生的感測訊號傳送出來的線路。在最下面一層，也可形成數個穿孔73O，讓氧化層彼此相通。 Figures 2A-2D disclose a complete support pillar structure in which the uppermost protective layer 92 can be a thick film photoresist or oxide layer that is familiar to semiconductor processes. The top metal connection pillar layer 13 has four third perforations 13O and is covered by the third oxide cladding layer 14. Below the top metal connection pillar layer 13, there are five second micro-shaped metal pillars 23, which are covered by a second oxide coating. 24 covered. Below it is a blade structure 33 and a first perforation 33O. Next, there are five first micro-shaped metal pillars 43 and are covered by the first oxide coating layer 44. Next, there is a portion of the base metal layer connecting pillar 53 which is composed of five corresponding base metal pillars and is covered by the base metal oxide layer 54. In the lower layer, it is composed of five third micro-shaped metal posts 63 and a fourth oxidized coating layer 64. The lowermost layer is a wire layer which is the main structure of the first metal layer 73, that is, a line through which the sensing signal generated by the movable element (that is, the inner ring supporting type sound collecting film 35) is transmitted. In the lowermost layer, a plurality of perforations 73O may also be formed to allow the oxide layers to communicate with each other.

請參考第2C、2D圖，頂面金屬連結柱層13、第二微形金屬柱23、葉片結構33、第一微形金屬柱43、基底金屬層連接柱53、第三微形金屬柱63、第一金屬層73等金屬的部分，彼此形成連接的結構，不僅可導通，更具備彼此間的間隙，讓氧化包覆層可以整體包覆，而構成如鋼筋混擬土般的結構。同時，在第2C、2D圖，保護層92、第三氧化包覆層14、第二氧化包覆層24、第一穿孔33O、第一氧化包覆層44、基底金屬氧化層54、第四氧化包覆層64、穿孔73O等氧化層的部分，同樣彼此形成連接的結構，並且，與金屬的部分彼此交錯、混成為混擬結構。頂面金屬連結柱層13與葉片結構33的大小，大於且可完全放置第二微形金屬柱23，而四個第一穿孔33O可完全與第二氧化包覆層24、第一氧化包覆層44連接。基底金屬連接柱53的大小，大於且可完全放置第一微形金屬柱43與第三微形金屬柱63。 Please refer to FIGS. 2C and 2D, the top metal joint pillar layer 13, the second micro metal pillar 23, the blade structure 33, the first micro-shaped metal pillar 43, the base metal layer connecting pillar 53, and the third micro-shaped metal pillar 63. The metal portions such as the first metal layer 73 are connected to each other, and are not only electrically conductive but also have a gap therebetween, and the oxidized coating layer can be integrally coated to form a structure such as a reinforced concrete. Meanwhile, in the 2C, 2D, the protective layer 92, the third oxide cladding layer 14, the second oxide cladding layer 24, the first via 33O, the first oxide cladding layer 44, the underlying metal oxide layer 54, and the fourth The portions of the oxide layer such as the oxide cladding layer 64 and the through holes 73O are also connected to each other, and the portions with the metal are interlaced with each other to form a mixed structure. The top metal joint pillar layer 13 and the blade structure 33 are larger in size and can be completely placed on the second micro-shaped metal pillar 23, and the four first through-holes 33O can be completely combined with the second oxide cladding layer 24 and the first oxide coating. Layer 44 is connected. The size of the base metal connecting post 53 is larger than and the first micro-shaped metal post 43 and the third micro-shaped metal post 63 can be completely placed.

明顯地，從第2A~2D的結構中可以看到，金屬層之間彼此連接，並且，氧化層之間也彼此連接。整個支撐柱從保護層、帽蓋、支撐柱本體到底柱都是金屬之間彼此連接，並且，各個微形金屬柱由氧化層包覆，而氧化層之間彼此通透連接，進而構成一個交錯的混成結構。此結構類似鋼筋混泥土結構，相較於以往的金屬柱、氧化層結構，在彈性、剛性的表現上優異許多，因此，可提供可動元件較佳的彈性、支撐、剛性、穩固性等。 Obviously, it can be seen from the structures of the 2A to 2D that the metal layers are connected to each other, and the oxide layers are also connected to each other. The entire support column is connected to each other from the protective layer, the cap, the support column body and the bottom column, and each of the micro-shaped metal posts is covered by an oxide layer, and the oxide layers are transparently connected to each other to form an interlaced Mixed structure. This structure Similar to the reinforced concrete structure, it is much superior in elasticity and rigidity compared with the conventional metal column and oxide layer structure. Therefore, it can provide better elasticity, support, rigidity, and stability of the movable member.

接著，請參考第3A~3D圖的實施例，其與第2A~2D圖的實施例差異在於基底金屬層的部分，基底金屬層連接柱53由四個第二穿孔53O所穿透。基底金屬連接柱53的大小，大於且可完全放置第一微形金屬柱43與第三微形金屬柱63，而四個第二穿孔53O可完全與第一氧化包覆層44連接。其餘者與第2A~2D圖的實施例相同，於此不多加贅述。 Next, please refer to the embodiment of FIGS. 3A-3D, which differs from the embodiment of FIGS. 2A-2D in the portion of the base metal layer, and the base metal layer connecting post 53 is penetrated by the four second through holes 53O. The base metal connecting post 53 is larger in size and can completely place the first micro-shaped metal pillar 43 and the third micro-shaped metal pillar 63, and the four second through-holes 53O can be completely connected to the first oxide cladding layer 44. The rest are the same as the embodiment of the 2A~2D diagram, and will not be described here.

接著，請參考第4A~4D圖的實施例，其與第2A~2D圖的實施例差異在於頂面金屬連結柱層13的結構，其為與第二微形金屬柱23對應配置的五個微形金屬柱結構。頂面金屬連結柱層13的大小，大於且可完全對應連接第二微形金屬柱23。其餘者與第2A~2D圖的實施例相同，於此不多加贅述。 Next, please refer to the embodiment of FIGS. 4A-4D, which differs from the embodiment of FIGS. 2A-2D in the structure of the top metal-bonded pillar layer 13, which is five corresponding to the second micro-shaped metal pillar 23. Micro-shaped metal column structure. The size of the top metal joint pillar layer 13 is larger than and completely corresponding to the connection of the second micro-shaped metal pillars 23. The rest are the same as the embodiment of the 2A~2D diagram, and will not be described here.

接著，請參考第5A~5D圖的實施例，其與第3A~3D圖的實施例差異在於頂面金屬連結柱層13的結構，其為與第二微形金屬柱23對應配置的五個微形金屬柱結構。頂面金屬連結柱層13的大小，大於且可完全對應連接第二微形金屬柱23。其餘者與第3A~3D圖的實施例相同，於此不多加贅述。 Next, please refer to the embodiment of FIGS. 5A-5D, which differs from the embodiment of FIGS. 3A-3D in the structure of the top metal joint pillar layer 13, which is five corresponding to the second micro-shaped metal pillar 23. Micro-shaped metal column structure. The size of the top metal joint pillar layer 13 is larger than and completely corresponding to the connection of the second micro-shaped metal pillars 23. The rest are the same as the embodiment of the 3A~3D diagram, and will not be described here.

接著，請參考第6A~6C圖的實施例，其與第4A~4D圖及第5A~5D圖的實施例差異在於基底金屬層的部分，基底金屬層連接柱53直接連接作為導線層，並且由四個第二穿孔53O所穿透。其餘者與第4A~4D圖及第5A~5D圖的實施例相同，於此不多加贅述。 Next, please refer to the embodiment of FIGS. 6A-6C, which differs from the embodiments of FIGS. 4A-4D and 5A-5D in the portion of the base metal layer, the base metal layer connecting post 53 is directly connected as the wire layer, and It is penetrated by four second perforations 53O. The rest are the same as the embodiments of FIGS. 4A to 4D and 5A to 5D, and are not described here.

接著，請參考第7A~7C圖的實施例，其與第2A~2D圖及第3A~3D圖的實施例差異在於基底金屬層的部分，基底金屬層連接柱53直接連接作為導線層，並且由四個第二穿孔53O所穿透。其餘者與第2A~2D圖及第3A~3D圖的實施例相同，於此不多加贅述。 Next, please refer to the embodiment of FIGS. 7A-7C, which differs from the embodiments of FIGS. 2A-2D and 3A~3D in the part of the base metal layer, and the base metal layer connecting column 53 is directly The connection acts as a wire layer and is penetrated by the four second perforations 53O. The rest are the same as the embodiments of FIGS. 2A-2D and 3A~3D, and are not described here.

其中，第6A~6C圖及第7A~7C圖的實施例中，底柱的部分並未繪出，其同樣可相應製作，並作為輔助支撐之用。 In the embodiments of FIGS. 6A-6C and 7A-7C, the bottom pillar portion is not depicted, and the same can be made correspondingly and used as an auxiliary support.

支撐柱本體由複數個第一微形金屬柱43、基底金屬連結柱層53、第一氧化包覆層44所構成。帽蓋由至少一個、與所構成。底柱由至少一個第三微形金屬柱63、底部金屬連接柱層73、第四氧化包覆層64所構成。 The support column body is composed of a plurality of first micro-shaped metal posts 43, a base metal connecting pillar layer 53, and a first oxide coating layer 44. The cap is composed of at least one and the same. The bottom pillar is composed of at least one third micro-shaped metal pillar 63, a bottom metal joint pillar layer 73, and a fourth oxide cladding layer 64.

接著，請參考第8A、8B圖，其為無帽蓋結構的本新型的另一實施例。回頭參考第1A、1B圖的實施例，比較後可發現，第8A、8B圖的實施例少了帽蓋結構，因此，少了一層金屬層，僅需要三層金屬層即可製作出CMOS可動元件與控制晶片整合的積體電路。少了帽蓋結構，第8B圖的銲墊31-1、31-2、31-3、31-4、31-5、31-6則為相對應於第1B圖銲墊11-1、11-2、11-3、11-4、11-5、11-6，其於的部分都與第1A、1B圖的實施例相同，於此不多加贅述。 Next, please refer to Figures 8A, 8B, which are another embodiment of the present invention without a cap structure. Referring back to the embodiments of FIGS. 1A and 1B, it can be found that the embodiment of FIGS. 8A and 8B has a cap structure. Therefore, a metal layer is missing, and only three metal layers are required to fabricate a CMOS movable layer. An integrated circuit that integrates components with the control chip. The cap structure is reduced, and the pads 31-1, 31-2, 31-3, 31-4, 31-5, and 31-6 of FIG. 8B correspond to the pads 11-1 and 11 of FIG. 1B. -2, 11-3, 11-4, 11-5, and 11-6, the portions thereof are the same as those of the first and second embodiments, and will not be further described herein.

接著，請參考第9A~9C圖，其為第8A、8B圖的實施例中，本新型之支撐柱結構之另一具體實施例。相對應於第2A~2D圖與第3A~3D圖的實施例，少了帽蓋結構的部分，其餘者與第2A~2D圖與第3A~3D圖的實施例相同，於此不多加贅述。 Next, please refer to FIGS. 9A-9C, which is another embodiment of the support post structure of the present invention in the embodiment of FIGS. 8A and 8B. Corresponding to the embodiments of the 2A~2D diagram and the 3A~3D diagram, the part of the cap structure is missing, and the others are the same as the embodiment of the 2A~2D diagram and the 3A~3D diagram, and the description is not repeated here. .

接著，請參考第10A~10C圖，其為第8A、8B圖的實施例中，本新型之支撐柱結構之另一具體實施例。相對應於第4A~4D圖第5A~5D圖的實施例，少了帽蓋結構的部分，其餘者與第4A~4D圖第35A~5D圖的實施例相同，於此不多加贅述。 Next, please refer to FIGS. 10A-10C, which is another embodiment of the support post structure of the present invention in the embodiment of FIGS. 8A and 8B. Corresponding to the embodiment of Figs. 5A to 5D of Figs. 4A to 4D, the portion of the cap structure is missing, and the others are the same as the embodiment of Figs. 35A to 5D of Figs. 4A to 4D, and will not be further described herein.

接著，請參考第11A~11C圖，其為第8A、8B圖的實施例中，本新型之支撐柱結構之另一具體實施例。相對應於第6A~6D圖第7A~7D圖的實施例，少了帽蓋結構的部分，其餘者與第6A~6D圖第7A~7D圖的實施例相同，於此不多加贅述。 Next, please refer to FIGS. 11A-11C, which are the embodiments of FIGS. 8A and 8B, Another specific embodiment of the support post structure of the present invention. Corresponding to the embodiment of Figs. 7A to 7D of Figs. 6A to 6D, the portion of the cap structure is missing, and the others are the same as the embodiment of Figs. 7A to 7D of Figs. 6A to 6D, and will not be further described herein.

接著，請參考第12A、12B圖，其為無帽蓋結構的本新型的又一實施例。與第8A、8B圖比較可發現，在此實施例，在葉片結構33上方，並未包覆保護層92，其餘皆於第8A、8B圖相同，於此不多加贅述。 Next, please refer to FIGS. 12A and 12B, which are still another embodiment of the present invention without a cap structure. As compared with the drawings of Figs. 8A and 8B, in this embodiment, the protective layer 92 is not coated over the blade structure 33, and the rest are the same in Figs. 8A and 8B, and the details are not described herein.

請參考第13A~13C圖，其為第8A、8B圖的實施例中，本新型之支撐柱結構之另一具體實施例。相對應於第9A~9C圖的實施例，少了保護層92的部分，其餘者與第9A~9C圖的實施例相同，於此不多加贅述。 Please refer to FIGS. 13A-13C, which is another embodiment of the support post structure of the present invention in the embodiment of FIGS. 8A and 8B. Corresponding to the embodiment of Figs. 9A to 9C, the portion of the protective layer 92 is missing, and the rest are the same as those of the embodiment of Figs. 9A to 9C, and will not be further described herein.

請參考第14A~14C圖，其為第8A、8B圖的實施例中，本新型之支撐柱結構之另一具體實施例。相對應於第10A~10C圖的實施例，少了保護層92的部分，其餘者與第10A~10C圖的實施例相同，於此不多加贅述。 Please refer to FIGS. 14A-14C, which is another embodiment of the support post structure of the present invention in the embodiment of FIGS. 8A and 8B. Corresponding to the embodiment of Figs. 10A to 10C, the portion of the protective layer 92 is missing, and the others are the same as those of the embodiment of Figs. 10A to 10C, and the details are not described herein.

請參考第15A~15C圖，其為第8A、8B圖的實施例中，本新型之支撐柱結構之另一具體實施例。相對應於第11A~11C圖的實施例，少了保護層92的部分，其餘者與第11A~11C圖的實施例相同，於此不多加贅述。 Please refer to FIGS. 15A-15C, which is another embodiment of the support post structure of the present invention in the embodiment of FIGS. 8A and 8B. Corresponding to the embodiment of Figs. 11A to 11C, the portion of the protective layer 92 is absent, and the rest are the same as those of the embodiment of Figs. 11A to 11C, and will not be further described herein.

請參考第16A~16C圖，其為第8A、8B圖的實施例中，本新型之支撐柱結構之另一具體實施例。相對應於第13A~13C圖的實施例，少了第一穿孔33O的部分，其餘者與第13A~13C圖的實施例相同，於此不多加贅述。 Please refer to FIGS. 16A-16C, which is another embodiment of the support post structure of the present invention in the embodiment of FIGS. 8A and 8B. Corresponding to the embodiment of Figs. 13A to 13C, the portion of the first through hole 33O is missing, and the others are the same as those of the embodiment of Figs. 13A to 13C, and the details are not described herein.

請參考第17A~17C圖，其為第8A、8B圖的實施例中，本新型之支撐柱結構之另一具體實施例。相對應於第14A~14C圖的實施例，少了第一穿孔33O的部分，其餘者與第14A~14C圖的實施例相同，於此不多加贅述。 Please refer to FIGS. 17A-17C, which is another embodiment of the support post structure of the present invention in the embodiment of FIGS. 8A and 8B. Corresponding to the embodiment of Figs. 14A-14C, the portion of the first through hole 33O is missing, and the others are the same as the embodiment of Figs. 14A to 14C. Add a statement.

請參考第18A~18C圖，其為第8A、8B圖的實施例中，本新型之支撐柱結構之另一具體實施例。相對應於第15A~15C圖的實施例，少了第一穿孔33O的部分，其餘者與第15A~15C圖的實施例相同，於此不多加贅述。 Please refer to FIGS. 18A-18C, which is another embodiment of the support post structure of the present invention in the embodiment of FIGS. 8A and 8B. Corresponding to the embodiment of Figs. 15A to 15C, the portion of the first through hole 33O is missing, and the others are the same as those of the embodiment of Figs. 15A to 15C, and the details are not described herein.

請參考第19A~19B圖，其為本新型之支撐柱結構之排列方式的數個實施例。第一微形金屬柱43可以多種方式排列，如第19A圖的方形矩陣方式排列，與第19B圖的六角矩陣排列。換言之，各種矩陣排列方式均可。 Please refer to Figures 19A-19B, which are several embodiments of the arrangement of the support column structures of the present invention. The first micro-shaped metal pillars 43 can be arranged in various ways, such as the square matrix arrangement of Fig. 19A, and the hexagonal matrix of Fig. 19B. In other words, various matrix arrangements are possible.

以上的實施例，係以可動薄膜當中的麥克風的內環支撐型集音薄膜為一實施例，並且，以整合於CMOS製程的實施例為範例。基本上，本新型的支撐柱，可用於所有的可動薄膜，包含以微機電製程(MEMS)單獨製作的可動薄膜，並成為可動薄膜所需的良好支撐柱解決方案。而這些可動薄膜一般係當作平行電容之用，其應用範圍含括了慣性感測器、聲音感測器、流體感測器、觸碰感測器、壓力感測器、致動器等。這些都可能運用本新型的支撐柱，以達到支撐可動薄膜、提高可動薄膜的耐久性的目的。 The above embodiment is an embodiment in which an inner ring supporting type sound collecting film of a microphone among movable films is taken as an example, and an embodiment integrated in a CMOS process is taken as an example. Basically, the new support column can be used for all movable films, including movable films made by microelectromechanical process (MEMS) alone, and is a good support column solution for moving films. These movable films are generally used as parallel capacitors, and their applications include inertial sensors, sound sensors, fluid sensors, touch sensors, pressure sensors, actuators, and the like. It is possible to use the support column of the present invention to achieve the purpose of supporting the movable film and improving the durability of the movable film.

總結以上的說明可知，本新型的支撐柱，基本上包含了支撐柱本體的部分，可選擇性包含帽蓋、底柱。其中，支撐柱本體形成於可動薄膜下方，用以支撐可動薄膜，可動薄膜可以一CMOS製程或一微機電製程製作。支撐柱包含：複數個第一微形金屬柱、基底金屬連接柱層與第一氧化包覆層。其中，第一微形金屬柱形成於可動薄膜下方，並與可動薄膜形成金屬導接；基底金屬連接柱層形成於第一微形金屬柱下方，與第一微形金屬柱導接；第一氧化包覆層包覆該些第一微形金屬柱而使第一微形金屬柱與空氣絕緣而可使該支撐柱形成柱狀。 Summarizing the above description, the support column of the present invention basically comprises a portion supporting the main body of the column, and optionally includes a cap and a bottom post. The support column body is formed under the movable film for supporting the movable film, and the movable film can be fabricated by a CMOS process or a micro-electromechanical process. The support column comprises: a plurality of first micro-shaped metal pillars, a base metal connecting pillar layer and a first oxide coating layer. The first micro-shaped metal pillar is formed under the movable film and forms a metal guiding connection with the movable film; the base metal connecting pillar layer is formed under the first micro-shaped metal pillar and is in contact with the first micro-shaped metal pillar; The oxidized coating layer coats the first micro-shaped metal pillars to insulate the first micro-shaped metal pillars from the air to form the pillars.

帽蓋則包含：至少一個第二微形金屬柱、頂面金屬連接柱層與第二氧化包覆層。其中，第二微形金屬柱與可動薄膜形成金屬導接；頂面金屬連接柱層與第二微形金屬柱形成導接；第二氧化包覆層包覆第二微形金屬柱而使第二微形金屬柱與空氣絕緣而可形成柱狀。 The cap comprises: at least one second micro-shaped metal post, a top metal connecting post layer and a second oxidizing coating. Wherein, the second micro-shaped metal column forms a metal guiding connection with the movable film; the top metal connecting column layer and the second micro-shaped metal column form a guiding connection; and the second oxidation coating layer covers the second micro-shaped metal column to make the first The two micro-shaped metal columns are insulated from the air to form a columnar shape.

底柱則包含：至少一個第三微形金屬柱、底部金屬連接柱層、第四氧化包覆層。其中，第三微形金屬柱與基底金屬連接柱層導接；底部金屬連接柱層與第三微形金屬柱形成導接；第四氧化包覆層包覆第三微形金屬柱而使第三微形金屬柱與空氣絕緣而可形成柱狀。 The bottom column comprises: at least one third micro-shaped metal column, a bottom metal connecting pillar layer, and a fourth oxide coating layer. Wherein, the third micro-shaped metal pillar is connected to the base metal connecting pillar layer; the bottom metal connecting pillar layer is in guiding connection with the third micro-shaped metal pillar; and the fourth oxidizing coating layer is coated with the third micro-shaped metal pillar to make the first The three micro-shaped metal columns are insulated from the air to form a columnar shape.

在支撐柱的結構上，每個金屬柱、金屬層的部分，都可由氧化層所包覆，並且所有的金屬柱與金屬層彼此相堆疊且連接，且氧化層彼此堆疊且連接，而共同形成混擬之混成結構。換言之，本新型的支撐柱，包含：複數金屬層柱體；及至少一層絕緣層柱體；其中，相鄰之兩個該金屬層柱體由複數個微形金屬柱連接，且該至少一層絕緣層柱體包覆全部或部分該些微形金屬柱體。 In the structure of the support column, each of the metal pillars and the metal layer may be covered by the oxide layer, and all the metal pillars and the metal layers are stacked and connected to each other, and the oxide layers are stacked and connected to each other to form a common Mixed mix structure. In other words, the support column of the present invention comprises: a plurality of metal layer columns; and at least one insulating layer column; wherein the adjacent two metal layer columns are connected by a plurality of micro-shaped metal columns, and the at least one layer is insulated The layer cylinders cover all or part of the micro-shaped metal cylinders.

綜合以上的說明，本新型的支撐柱適當震動的抵抗能力。 Based on the above description, the support column of the present invention is suitably vibrated.

雖然本創作的技術內容已經以較佳實施例揭露如上，然其並非用以限定本創作，任何熟習此技藝者，在不脫離本創作之精神所作些許之更動與潤飾，皆應涵蓋於本創作的範疇內，因此本創作之保護範圍當視後附之申請專利範圍所界定者為準。 Although the technical content of the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the present invention. Anyone who is familiar with the art, and some modifications and refinements that do not depart from the spirit of the present invention should be included in the creation. Therefore, the scope of protection of this creation is subject to the definition of the scope of the patent application.

13‧‧‧頂面金屬連結柱層 13‧‧‧Top metal joint pillar

14‧‧‧第三氧化包覆層 14‧‧‧ Third Oxidation Coating

23‧‧‧第二微形金屬柱 23‧‧‧Second micro-shaped metal column

24‧‧‧第二氧化包覆層 24‧‧‧Second oxide coating

33‧‧‧葉片結構 33‧‧‧ blade structure

43‧‧‧第一微形金屬柱 43‧‧‧First micro-shaped metal column

44‧‧‧第一氧化包覆層 44‧‧‧First Oxidation Coating

53‧‧‧基底金屬連結柱層 53‧‧‧Base metal joint pillar

54‧‧‧基底金屬氧化層 54‧‧‧Base metal oxide layer

55‧‧‧基底金屬層 55‧‧‧Base metal layer

92‧‧‧保護層 92‧‧‧Protective layer

B-B‧‧‧剖面線 B-B‧‧‧ hatching

Claims

一種支撐柱，形成於一可動薄膜下方，用以支撐該可動薄膜，包含：複數個第一微形金屬柱，形成於該可動薄膜下方，並與該可動薄膜形成金屬導接；一基底金屬連接柱層，形成於該些第一微形金屬柱下方，與該些第一微形金屬柱導接；及一第一氧化包覆層，完全或部分包覆該些第一微形金屬柱而使該些第一微形金屬柱與空氣絕緣而可使該支撐柱形成柱狀。 A support column is formed under a movable film for supporting the movable film, comprising: a plurality of first micro-shaped metal columns formed under the movable film and forming a metal connection with the movable film; a base metal connection a pillar layer formed under the first micro-shaped metal pillars to be in contact with the first micro-shaped metal pillars; and a first oxide cladding layer completely or partially covering the first micro-shaped metal pillars The first micro-shaped metal columns are insulated from the air to form the support columns in a columnar shape.

如請求項1的支撐柱，其中該可動薄膜形成有至少一個第一穿孔，該第一穿孔以一氧化材料填滿而與該第一氧化包覆層形成連結。 The support column of claim 1, wherein the movable film is formed with at least one first perforation, the first perforation being filled with an oxidizing material to form a bond with the first oxidized cladding layer.

如請求項1的支撐柱，其中該基底金屬連接柱層形成有至少一個第二穿孔，該第二穿孔以一氧化材料填滿而與該第一氧化包覆層形成連結。 The support column of claim 1, wherein the base metal connecting pillar layer is formed with at least one second through hole, and the second through hole is filled with an oxidizing material to form a joint with the first oxide coating layer.

如請求項2的支撐柱，其中該基底金屬連接柱層形成有至少一個第二穿孔，該第二穿孔以該氧化材料填滿而與該第一氧化包覆層形成連結。 The support column of claim 2, wherein the base metal connecting pillar layer is formed with at least one second through hole, the second through hole being filled with the oxidized material to form a joint with the first oxide coating layer.

如請求項2的支撐柱，更包含：一頂面連接柱保護層，形成於該可動薄膜上。 The support column of claim 2, further comprising: a top surface connection pillar protective layer formed on the movable film.

如請求項2或4的支撐柱，更包含一帽蓋，形成於該可動薄膜上方，該帽蓋包含：一至少一個第二微形金屬柱，與該可動薄膜形成金屬導接；及一頂面金屬連接柱層，與該第二微形金屬柱形成導接。 The support column of claim 2 or 4 further comprising a cap formed over the movable film, the cap comprising: at least one second micro-shaped metal post to form a metal guide with the movable film; and a top The surface metal is connected to the pillar layer to form a junction with the second micro-shaped metal pillar.

如請求項6的支撐柱，更包含：一第二氧化包覆層，包覆該至少一個第二微形金屬柱而使該第二微形金屬柱與空氣絕緣而可形成柱狀。 The support column of claim 6, further comprising: a second oxidation coating layer covering the at least one second micro-shaped metal column to make the second micro-shape The metal column is insulated from air to form a column.

如請求項6的支撐柱，更包含：一頂面連接柱保護層，形成於該頂面金屬連接柱層上。 The support column of claim 6, further comprising: a top surface connection pillar protection layer formed on the top metal connection pillar layer.

如請求項7的支撐柱，其中該頂面金屬連接柱層形成有至少一個第三穿孔，該第三穿孔以該氧化材料填滿而與該第二氧化包覆層形成連結。 The support column of claim 7, wherein the top metal connection pillar layer is formed with at least one third perforation, the third perforation being filled with the oxidized material to form a joint with the second oxide cladding layer.

如請求項6的支撐柱，其中該些第二微形金屬柱係以矩陣排列。 The support column of claim 6, wherein the second micro-shaped metal columns are arranged in a matrix.

如請求項6的支撐柱，其中該些第二微形金屬柱與該些第一微形金屬柱係一對一上下對應配置。 The support column of claim 6, wherein the second micro-shaped metal pillars are arranged one-to-one correspondingly with the first micro-shaped metal pillars.

如請求項6的支撐柱，其中該些第二微形金屬柱與該些第一微形金屬柱係非一對一上下對應配置。 The support column of claim 6, wherein the second micro-shaped metal pillars are non-one-to-one correspondingly arranged with the first micro-shaped metal pillars.

如請求項1的支撐柱，其中該些第一微形金屬柱係以矩陣排列。 The support column of claim 1, wherein the first micro-shaped metal columns are arranged in a matrix.

如請求項1的支撐柱，更包含一底柱，形成於該基底金屬連接柱層下方，該底柱包含：一至少一個第三微形金屬柱，與該基底金屬連接柱層導接；一底部金屬連接柱層，與該第三微形金屬柱形成導接；及一第四氧化包覆層，包覆該至少一個第三微形金屬柱而使該第三微形金屬柱與空氣絕緣而可形成柱狀。 The support column of claim 1, further comprising a bottom pillar formed under the base metal connecting pillar layer, the bottom pillar comprising: at least one third micro-shaped metal pillar, and the base metal connecting pillar layer is connected; a bottom metal connection pillar layer, forming a junction with the third micro-shaped metal pillar; and a fourth oxidation cladding layer covering the at least one third micro-shaped metal pillar to insulate the third micro-shaped metal pillar from the air It can form a column.

如請求項14的支撐柱，其中該底部金屬連接柱層形成有至少一個第四穿孔，該第四穿孔以一氧化材料填滿而與該第四氧化包覆層形成連結。 The support column of claim 14, wherein the bottom metal connection pillar layer is formed with at least one fourth perforation, the fourth perforation being filled with an oxidizing material to form a joint with the fourth oxide cladding layer.

如請求項14的支撐柱，其中該些第三微形金屬柱係以矩陣排列。 The support column of claim 14, wherein the third micro-shaped metal columns are arranged in a matrix.

如請求項14的支撐柱，其中該些第三微形金屬柱與該些第一微形金屬柱係一對一上下對應配置。 The support column of claim 14, wherein the third micro-shaped metal pillars are arranged one-to-one correspondingly with the first micro-shaped metal pillars.

如請求項14的支撐柱，其中該些第三微形金屬柱與該些第一微形金屬柱係非一對一上下對應配置。 The support column of claim 14, wherein the third micro-shaped metal pillars are arranged in a one-to-one correspondence with the first micro-shaped metal pillars.

如請求項14的支撐柱，更包含一帽蓋，形成於該可動薄膜上方，該帽蓋包含：一至少一個第二微形金屬柱，與該可動薄膜形成金屬導接；及一頂面金屬連接柱層，與該第二微形金屬柱形成導接。 The support column of claim 14 further includes a cap formed over the movable film, the cap comprising: at least one second micro-shaped metal post to form a metal guide with the movable film; and a top metal Connecting the pillar layer to form a junction with the second micro-shaped metal pillar.

如請求項19的支撐柱，更包含：一第二氧化包覆層，包覆該至少一個第二微形金屬柱而使該第二微形金屬柱與空氣絕緣而可形成柱狀。 The support column of claim 19, further comprising: a second oxidized cladding layer covering the at least one second micro-shaped metal pillar to insulate the second micro-shaped metal pillar from the air to form a columnar shape.

如請求項19的支撐柱，更包含：一頂面連接柱保護層，形成於該頂面金屬連接柱層上。 The support column of claim 19, further comprising: a top surface connection pillar protection layer formed on the top metal connection pillar layer.

如請求項20的支撐柱，其中該頂面金屬連接柱層形成有至少一個第三穿孔，該第三穿孔以一氧化材料填滿而與該第二氧化包覆層形成連結。 The support column of claim 20, wherein the top metal connection pillar layer is formed with at least one third perforation, the third perforation being filled with an oxidizing material to form a joint with the second oxide cladding layer.

如請求項19的支撐柱，其中該些第二微形金屬柱係以矩陣排列。 The support column of claim 19, wherein the second micro-shaped metal columns are arranged in a matrix.

如請求項19的支撐柱，其中該些第二微形金屬柱與該些第一微形金屬柱係一對一上下對應配置。 The support column of claim 19, wherein the second micro-shaped metal pillars are arranged one-to-one correspondingly with the first micro-shaped metal pillars.

如請求項19的支撐柱，其中該些第二微形金屬柱與該些第一微形金屬柱係非一對一上下對應配置。 The support column of claim 19, wherein the second micro-shaped metal pillars are non-one-to-one correspondingly arranged with the first micro-shaped metal pillars.