TWM482586U - Apparatus for formatting graphene film, and graphene film structure - Google Patents
Apparatus for formatting graphene film, and graphene film structure Download PDFInfo
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本創作為一種製備裝置以及產品結構，特別是關於一種石墨烯的製備裝置以及結構。The present invention is a preparation apparatus and product structure, and more particularly to a preparation apparatus and structure of graphene.
石墨烯(graphene)是一種單層原子厚的碳材料，每個碳原子之間以sp2混成與相鄰的三個原子形成鍵結，並延伸成蜂窩狀的二維結構。且石墨烯的更以良好的載子遷移率(carrier mobility)著稱，因其具有優異的電學性能、化學穩定性、可彎折、良好的導熱及高穿透率等性質，故石墨烯目前已被廣泛應用於半導體、觸控面板或太陽能電池等領域中。Graphene is a single layer of atomic carbon material. Each carbon atom is sp2 mixed with three adjacent atoms to form a honeycomb two-dimensional structure. Moreover, graphene is more famous for its good carrier mobility. Because of its excellent electrical properties, chemical stability, bendability, good thermal conductivity and high transmittance, graphene has been It is widely used in the fields of semiconductors, touch panels or solar cells.
然而，若欲將石墨烯作為導熱材使用時，其製備時須特別注意石墨烯產物的組裝及堆疊的情況(亦即其異方向性)，以達到較佳的導熱效果。However, if graphene is to be used as a heat-conducting material, special attention must be paid to the assembly and stacking of the graphene product (ie, its directionality) in order to achieve a better thermal conductivity.
承前，為了達到具有高方向性的石墨烯產物，一般習知的作法除了以真空抽濾的方式製作，亦可使用Langmuir-Blodgett法在水面上形成氧化石墨烯的自組裝薄膜。例如，於氯仿與水的界面形成單層的石墨烯膜、正戊烷與水的界間以乙醇形成薄膜的方法或者在水與庚烷的不互溶的介面形成石墨烯薄膜等等。但以上的作法皆有形成薄膜的速度限制、乾燥時間過長、無法大面積製作，或是無法發展連續自動化製程的缺點。In order to achieve a graphene product having high directivity, a conventionally known method can be used to form a self-assembled film of graphene oxide on a water surface by using a Langmuir-Blodgett method in addition to vacuum suction filtration. For example, a single-layer graphene film is formed at the interface between chloroform and water, a film is formed by ethanol between n-pentane and water, or a graphene film is formed in an immiscible interface between water and heptane. However, all of the above methods have the disadvantages of forming a film with a speed limit, a long drying time, a large area, or the inability to develop a continuous automated process.
故，如何提供一種石墨烯產物具有方向性、便於量產的石墨烯薄膜製備裝置以及方法，已成為重要課題之一。Therefore, how to provide a graphene film preparation device and method for directionality and mass production of graphene products has become one of the important topics.
有鑑於上述課題，本創作之目的為提供一種石墨烯產物具有高方向性、便於量產的石墨烯薄膜製備裝置以及其結構。In view of the above problems, the object of the present invention is to provide a graphene film preparation apparatus having a high directivity and a mass production of a graphene product, and a structure thereof.
達上述目的，本創作可提供一種製備石墨烯薄膜的裝置，包含：槽體、供料單元以及傳輸裝置。To achieve the above object, the present invention can provide a device for preparing a graphene film, comprising: a tank body, a feeding unit and a conveying device.
槽體具有容置空間，且容置空間包括溶液。供料單元則可提供石墨烯溶液。The tank body has an accommodating space, and the accommodating space includes a solution. The feed unit provides a graphene solution.
石墨烯溶液形成於溶液的表面，且石墨溶液得以於溶液表面形成石墨烯薄膜，傳輸裝置得以將工件至少部份沒入溶液。當工件通過石墨烯薄膜與溶液的界面時，石墨烯薄膜得以附著於工件的表面。The graphene solution is formed on the surface of the solution, and the graphite solution forms a graphene film on the surface of the solution, and the transport device can at least partially immerse the workpiece into the solution. When the workpiece passes through the interface between the graphene film and the solution, the graphene film is attached to the surface of the workpiece.
在一實施例中，更包括乾燥單元，設置於傳輸裝置的一側，並得以烘乾著附於工件的表面的石墨烯溶液。In one embodiment, a drying unit is further included, disposed on one side of the transport device, and drying the graphene solution attached to the surface of the workpiece.
在一實施例中，傳輸裝置為滾輪裝置。In an embodiment, the transport device is a scroll device.
在一實施例中，石墨烯溶液包括有機溶液，且該有機溶液為正己烷、甲苯、氯仿、四氯氟喃、二甲基甲醯胺、乙醇、丙酮、二甲基亞碸、苯或其組合。In one embodiment, the graphene solution comprises an organic solution, and the organic solution is n-hexane, toluene, chloroform, tetrachlorofluoropyran, dimethylformamide, ethanol, acetone, dimethyl hydrazine, benzene or combination.
在一實施例中，溶液包括有機溶劑，且有機溶液為正己烷、甲苯、氯仿、四氯氟喃、二甲基甲醯胺、乙醇、丙酮、二甲基亞碸、苯或其組合。In one embodiment, the solution comprises an organic solvent and the organic solution is n-hexane, toluene, chloroform, tetrachloroflurane, dimethylformamide, ethanol, acetone, dimethylhydrazine, benzene or a combination thereof.
在一實施例中，工件為基板、電子裝置殼體或電極結構。In an embodiment, the workpiece is a substrate, an electronic device housing, or an electrode structure.
此外，本創作更可提供石墨烯薄膜的結構，其包括複數個石墨烯層體，且該些石墨烯層體的各層間距相等，其中該些石墨烯層體是以前述的方法所製成。In addition, the present invention further provides a structure of a graphene film, which comprises a plurality of graphene layers, and the layers of the graphene layers are equally spaced, wherein the graphene layers are formed by the foregoing method.
承上所述，本創作利用石墨烯溶液在溶液表面形成一石墨烯薄膜，且工件得以通過石墨烯溶液與溶液的界面的方式，使得石墨烯薄膜形成於工件上。且此種製備方式將不囿限工件的表面形狀，換言之，可依據需求將石墨烯薄膜形成於電極、或是作為表面防腐蝕處理使用。As described above, the present invention uses a graphene solution to form a graphene film on the surface of the solution, and the workpiece is passed through the interface between the graphene solution and the solution, so that the graphene film is formed on the workpiece. Moreover, the preparation method will not limit the surface shape of the workpiece, in other words, the graphene film may be formed on the electrode according to requirements or used as a surface anti-corrosion treatment.
此外，更可透過重複形成石墨烯薄膜，以產生排列方向一致且各層體間隔均勻的石墨烯薄膜，此種結構的石墨烯薄膜除了具優良的導電性以外，更可在各層體間形熱流的通道，形成優良的導熱材。In addition, the graphene film can be repeatedly formed to produce a graphene film having a uniform arrangement direction and uniform spacing between the layers. The graphene film of this structure can form a heat flow between the layers in addition to excellent conductivity. The channel forms an excellent heat conductive material.
1‧‧‧裝置1‧‧‧ device
10‧‧‧槽體10‧‧‧
12‧‧‧供料單元12‧‧‧Feeding unit
14‧‧‧傳輸裝置14‧‧‧Transportation device
16‧‧‧乾燥單元16‧‧‧Drying unit
2‧‧‧工件2‧‧‧Workpiece
F‧‧‧石墨烯薄膜F‧‧‧ graphene film
G‧‧‧石墨烯溶液G‧‧‧graphene solution
S‧‧‧溶液S‧‧‧ solution
圖1為一種本創作的製備石墨烯薄膜的裝置其一實施例的立體示意圖。BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing an embodiment of a device for producing a graphene film of the present invention.
圖2為圖1的實施例的側面示意圖。Figure 2 is a side elevational view of the embodiment of Figure 1.
圖3A為圖1的一種石墨烯薄膜的放大示意圖。3A is an enlarged schematic view of a graphene film of FIG. 1.
圖3B為習知的一種石墨烯薄膜的剖面示意圖。3B is a schematic cross-sectional view of a conventional graphene film.
圖4為本創作所提供的不同厚度的石墨烯薄膜的光學穿透度與片電阻的關係圖。Figure 4 is a graph showing the relationship between the optical transmittance and the sheet resistance of graphene films of different thicknesses provided by the present invention.
以下將參照相關圖式，說明依本創作較佳實施例之一種製備石墨烯薄膜的裝置以及石墨烯薄膜結構，其中相同的元件將以相同的參照符號加以說明。Hereinafter, an apparatus for preparing a graphene film and a graphene film structure according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings, wherein the same elements will be described with the same reference numerals.
請一併參考圖1至圖4，圖1為一種本創作的製備石墨烯薄膜的裝置其一實施例的立體示意圖。圖2則為圖1的實施例的側面示意圖。圖3A為圖1的一種石墨烯薄膜的放大示意圖。圖3B為習知的一種石墨烯薄膜的剖面示意圖。圖4為本創作所提供的不同厚度的石墨烯薄膜的光學穿透度與片電阻的關係圖。Please refer to FIG. 1 to FIG. 4 together. FIG. 1 is a perspective view of an embodiment of the apparatus for preparing a graphene film. Figure 2 is a side elevational view of the embodiment of Figure 1. 3A is an enlarged schematic view of a graphene film of FIG. 1. 3B is a schematic cross-sectional view of a conventional graphene film. Figure 4 is a graph showing the relationship between the optical transmittance and the sheet resistance of graphene films of different thicknesses provided by the present invention.
本創作可提供一種製備石墨烯薄膜的裝置1，其包含槽體10、供料單元12以及傳輸裝置14。The present invention provides a device 1 for preparing a graphene film comprising a tank body 10, a feed unit 12, and a transport device 14.
以下將先針對各個元件加以說明。The individual components will be described first below.
本實施例的槽體10具有容置空間，且容置空間包括溶液S。且較佳地，本實施例的槽體10可為控溫槽體，得以調整溶液S的操作溫度。The tank body 10 of the present embodiment has an accommodating space, and the accommodating space includes a solution S. Preferably, the tank body 10 of the present embodiment can be a temperature control tank body, and the operating temperature of the solution S can be adjusted.
且溶液S的操作溫度可介於60℃~100℃，此操作溫度範圍將會依據不同的溶液S而有所調整，其溫度須可使得後續供料單元12提供的有機溶劑揮發，避免有機溶劑形成額外的液體界面或者有機溶液溶於溶液中改變溶液的表面張力等等。And the operating temperature of the solution S can be between 60 ° C and 100 ° C, the operating temperature range will be adjusted according to different solutions S, the temperature must be such that the organic solvent provided by the subsequent feeding unit 12 volatilizes, avoiding organic solvents An additional liquid interface is formed or the organic solution is dissolved in the solution to change the surface tension of the solution and the like.
此處的溶液S可為純水、或是水與其他有機溶劑的混合物，有機溶劑例如可為正己烷、甲苯、氯仿、四氯氟喃、二甲基甲醯胺、乙醇、丙酮、二甲基亞碸、苯或其組合，但不以此些有機溶劑為限制。The solution S herein may be pure water or a mixture of water and other organic solvents, and the organic solvent may be, for example, n-hexane, toluene, chloroform, tetrachlorofluoropyran, dimethylformamide, ethanol, acetone, or dimethyl. Kea, benzene or a combination thereof, but not limited by these organic solvents.
供料單元12則可提供石墨烯溶液G。本實施例的石墨烯溶液G是以將石墨烯以攪拌或是超音波震盪均勻分散於有機溶劑中以形成石墨烯溶液G。補充說明的是，此處的有機溶液可為正己烷、甲苯、氯仿、四氯氟喃、二甲基甲醯胺、乙醇、丙酮、二甲基亞碸、苯或其組合。The feed unit 12 can then provide a graphene solution G. The graphene solution G of the present embodiment is obtained by uniformly dispersing graphene in an organic solvent by stirring or ultrasonic vibration to form a graphene solution G. It is to be noted that the organic solution herein may be n-hexane, toluene, chloroform, tetrachlorofluoropyran, dimethylformamide, ethanol, acetone, dimethylhydrazine, benzene or a combination thereof.
且搭配的有機溶液亦不限制僅為一種溶液，也可混合一種以上調合成溶液，僅須控制使得石墨烯於溶液中的濃度介於0.01wt%至10wt%之間，特別是以0.1wt%至1wt%即可。The organic solution is not limited to only one solution, and one or more synthetic solutions may be mixed, and only the concentration of graphene in the solution is between 0.01 wt% and 10 wt%, especially 0.1 wt%. It can be up to 1% by weight.
詳細而言，石墨烯溶液G的石墨烯粉末將會於有機溶劑與溶液S的界面形成石墨烯薄膜F，且在有機溶劑揮發後，石墨烯薄膜F得以於水與空氣之介面穩定存在且形成一薄膜。In detail, the graphene powder of the graphene solution G forms a graphene film F at the interface between the organic solvent and the solution S, and after the organic solvent is volatilized, the graphene film F is stably formed and formed in the interface between water and air. a film.
且本實施例的供料單元12可為注射針筒、各式幫浦、擠出機、輸送帶或是噴嘴等等可用以傳輸液體的構件。且供料單元12得以將石墨烯溶液G輸送至溶液S表面，並透過表面張力形成石墨烯薄膜F。Moreover, the feeding unit 12 of the embodiment may be an injection syringe, various pumps, an extruder, a conveyor belt or a nozzle, and the like, which can be used to transport liquid. And the feeding unit 12 can transport the graphene solution G to the surface of the solution S and form the graphene film F through the surface tension.
此外，為了避免石墨烯溶液G中的石墨烯薄膜F突破溶液S表面張力而沉入其中，本實施例的供料單元12的設置位置以接近溶液S表面的高度為佳(出口位置鄰近、與溶液S表面平行)。當石墨烯溶液G持續的供給至溶液S表面，此時將可形成石墨烯薄膜F。In addition, in order to prevent the graphene film F in the graphene solution G from sinking into the surface tension of the solution S, the feeding position of the feeding unit 12 of the present embodiment is preferably close to the height of the surface of the solution S (the exit position is adjacent to The surface of the solution S is parallel). When the graphene solution G is continuously supplied to the surface of the solution S, the graphene film F can be formed at this time.
傳輸裝置14可為滾輪裝置，且得以連續捲動並運送工件2。且本實施例的滾輪的捲動速度須搭配石墨烯薄膜F於溶液S表面形成的速度，而其形成的速度將透過供料單元12控制。且，本實施例的石墨烯薄膜F形成速度約介於5cm/min至2000cm/min之間，但會依據供料單元12、不同工件2而有所調整。The transport device 14 can be a roller device and can continuously scroll and transport the workpiece 2. Moreover, the scrolling speed of the roller of this embodiment must match the speed at which the graphene film F is formed on the surface of the solution S, and the speed at which it is formed will be controlled by the feeding unit 12. Moreover, the graphene film F of the present embodiment has a forming speed of about 5 cm/min to 2000 cm/min, but is adjusted according to the feeding unit 12 and the different workpiece 2.
雖本實施例所例示的工件2為基板，但於其他實施態樣或是搭配其他的傳輸裝置14，工件可為電子裝置殼體或電極結構，故不以基板為限制。Although the workpiece 2 exemplified in the embodiment is a substrate, in other embodiments or in combination with other transmission devices 14, the workpiece may be an electronic device housing or an electrode structure, and thus the substrate is not limited.
換言之，雖本實施例例示於一個平面基材上形成石墨烯薄膜F，但亦可將本實施例應用於不同形狀的基材表面以形成石墨烯薄膜F。In other words, although the present embodiment exemplifies the formation of the graphene film F on a planar substrate, the present embodiment can also be applied to the surface of a substrate of a different shape to form the graphene film F.
且工件2的材料可金屬，例如不銹鋼、鋁、鋁合金、或是電鍍及具有各種表面處理的金屬材質。工件2也為聚合物薄片，例如聚乙烯、 聚氯乙烯、聚丙烯、聚醯亞胺、聚對苯二甲酸乙二酯、鐵氟龍、矽膠等，此外，工件2塗覆石墨烯薄膜前亦可有一前處理程序，例如針對工件2表面進行硬化處理、氟化處理、親水處理等等。The material of the workpiece 2 can be metal, such as stainless steel, aluminum, aluminum alloy, or metal plated with various surface treatments. The workpiece 2 is also a polymer sheet, such as polyethylene, Polyvinyl chloride, polypropylene, polyimine, polyethylene terephthalate, Teflon, silicone, etc. In addition, the workpiece 2 may have a pretreatment process before coating the graphene film, for example, for the surface of the workpiece 2 Hardening treatment, fluorination treatment, hydrophilic treatment, and the like are performed.
此外，亦可將工件2先置入熱水浴中，並將工件2調整至適當溫度，以使將工件2表面的石墨烯溶液G乾燥速度加速。Further, the workpiece 2 may be placed in a hot water bath first, and the workpiece 2 may be adjusted to an appropriate temperature to accelerate the drying rate of the graphene solution G on the surface of the workpiece 2.
實際操作時，石墨烯溶液G將會於溶液S的表面形成石墨烯薄膜F，傳輸裝置14得以將工件2至少部份沒入溶液S。當工件2通過石墨烯薄膜F與溶液S的界面時，石墨烯薄膜F得以附著於工件2的表面。In actual operation, the graphene solution G will form a graphene film F on the surface of the solution S, and the transfer device 14 can at least partially immerse the workpiece 2 into the solution S. When the workpiece 2 passes the interface of the graphene film F and the solution S, the graphene film F is attached to the surface of the workpiece 2.
且本實施例更包括乾燥單元16，設置於傳輸裝置14的一側，並得以烘乾著附於工件2的表面的石墨烯薄膜F(將石墨烯薄膜的水分完全去除)，並避免石墨烯薄膜F意外剝落或是其內部產生氣泡。Moreover, the embodiment further includes a drying unit 16 disposed on one side of the transport device 14 and drying the graphene film F attached to the surface of the workpiece 2 (to completely remove moisture of the graphene film) and avoiding graphene The film F is accidentally peeled off or bubbles are generated inside.
乾燥單元16可為發熱單元、發光單元、熱風單元、鼓風機、風刀、燈管、燈泡、電熱器或紅外線加熱裝置等等。且依據不同種類的乾燥單元16、須乾燥的區域的大小可控制石墨烯薄膜F乾燥的時間大約可介於1秒至1分鐘之間，但不以此為限制。The drying unit 16 may be a heat generating unit, a light emitting unit, a hot air unit, a blower, an air knife, a light tube, a light bulb, an electric heater or an infrared heating device, or the like. And depending on the size of the different types of drying unit 16, the area to be dried, the drying time of the graphene film F can be controlled to be between about 1 second and 1 minute, but not limited thereto.
但設置乾燥單元16的目的僅為加速石墨烯薄膜F的形成時間，此效果亦可透過提高溶液的溫度或是調整工作環境的溫度等等方式亦可達到相似的效果，故乾燥單元16並非未必要構件，將不以此為限制。However, the purpose of the drying unit 16 is only to accelerate the formation time of the graphene film F. This effect can also achieve similar effects by increasing the temperature of the solution or adjusting the temperature of the working environment, etc., so the drying unit 16 is not The necessary components will not be limited by this.
請特別參考圖4，其為本創作所提供的不同厚度的石墨烯薄膜的光學穿透度與片電阻的關係圖。Please refer to FIG. 4 in particular for the relationship between the optical transmittance and sheet resistance of graphene films of different thicknesses provided by the present invention.
詳而言之，製備石墨烯薄膜的裝置1亦可依據不同的需求(例如不同的光學穿透度、片電阻的考量)，形成不同厚度的石墨烯薄膜。故，例如，本實施例所形成的單層石墨烯薄膜的厚度可介於1nm至100nm之間，若需要製作較厚的石墨烯薄膜，則可透過將具有石墨烯薄膜的工件再次通過石墨烯薄膜與溶液的界面。換言之，使用者可透過重複附著的方式將石墨烯薄膜堆疊至所欲的厚度。In detail, the apparatus 1 for preparing a graphene film can also form graphene films of different thicknesses according to different requirements (for example, different optical transmittances and sheet resistance considerations). Therefore, for example, the thickness of the single-layer graphene film formed in this embodiment may be between 1 nm and 100 nm. If a thick graphene film is required, the workpiece having the graphene film can be passed through the graphene again. The interface between the film and the solution. In other words, the user can stack the graphene film to a desired thickness by repeating adhesion.
且此種作法的優點在於，各石墨烯薄膜皆以平行堆疊(如圖4)，該些石墨烯層體的各層間距相等，使得熱能將會依循平行的方向逸散，且可阻斷熱能往垂直層體的方向傳導，故可使得整體的平行導熱效果、垂 直絕熱效果相較習知的石墨烯結構(如圖3B)更優異。The advantage of this method is that each graphene film is stacked in parallel (as shown in FIG. 4), and the layers of the graphene layer are equally spaced, so that the heat energy will escape in a parallel direction and block heat energy. The direction of the vertical layer is conducted, so that the overall parallel heat conduction effect and the vertical The direct adiabatic effect is superior to the conventional graphene structure (Fig. 3B).
以下將例示，本實施例的可能的實驗例作為參考。The possible experimental examples of the present embodiment will be exemplified below as a reference.
本創作的第一實驗例的石墨烯溶液G可由石墨烯與氯仿配7mg/ml的溶劑。且供料單元12可為一內徑為100μm的針筒，且以1ml/s的速度進料。並以80℃的去離子水作為溶液S。且本實施例的工件2可先進行一親水處理。The graphene solution G of the first experimental example of the present invention may be a solvent of 7 mg/ml of graphene and chloroform. And the feeding unit 12 can be a syringe having an inner diameter of 100 μm and fed at a speed of 1 ml/s. Deionized water at 80 ° C was used as the solution S. Moreover, the workpiece 2 of the embodiment can be subjected to a hydrophilic treatment first.
透過氯仿在溶液S表面所造成的張力，石墨烯溶液G中的石墨烯附著於表面已親水處理的工件2的PET表面，工件2與與石墨烯薄膜F與溶液S的界面呈約略75℃~90℃。Through the tension caused by the chloroform on the surface of the solution S, the graphene in the graphene solution G adheres to the PET surface of the workpiece 2 which has been hydrophilically treated, and the interface between the workpiece 2 and the graphene film F and the solution S is approximately 75 ° C. 90 ° C.
再透過乾燥單元16以80℃烘烤著附於工件2的表面的石墨烯薄膜F，去除殘留在石墨烯薄膜F內的水與溶劑，並形成厚度為1~30nm的石墨烯薄膜F。The graphene film F attached to the surface of the workpiece 2 is baked at 80 ° C through the drying unit 16, and water and a solvent remaining in the graphene film F are removed to form a graphene film F having a thickness of 1 to 30 nm.
此外，本實施例的基材的材質可為鋁箔，鑑於石墨烯本身優異的電導特性，將石墨烯塗佈於在鋁箔表面更可增進鋁箔的電導特性。此實施例將可作為在鋰電池正極材料的電極使用，進而提升鋰電池的整體的性能。In addition, the material of the substrate of the present embodiment may be an aluminum foil. In view of the excellent electrical conductivity characteristics of the graphene itself, coating the graphene on the surface of the aluminum foil further enhances the electrical conductivity of the aluminum foil. This embodiment will be used as an electrode for a positive electrode material of a lithium battery, thereby improving the overall performance of the lithium battery.
本創作的第二實施例石墨烯溶液G則可為由石墨烯與氯仿配成5mg/ml的溶劑。且供料單元12可為內徑1mm的出料口蠕動幫浦，且以10ml/min的速率進料。並以80℃的去離子水作為溶液S。The graphene solution G of the second embodiment of the present invention may be a solvent prepared by combining graphene and chloroform to 5 mg/ml. And the feeding unit 12 can be a discharge port peristaltic pump having an inner diameter of 1 mm and fed at a rate of 10 ml/min. Deionized water at 80 ° C was used as the solution S.
補充說明的是，本案的供料單元可依據不同的流量採用幫浦或是針筒，但不以這兩者為限制。In addition, the feeding unit of the present case can use a pump or a syringe according to different flow rates, but not limited by the two.
相似地，透過氯仿在溶液S表面所造成的張力，石墨烯溶液G中的石墨烯(或稱石墨烯薄膜F)附著於表面已親水處理的工件2的表面(工件2可為鋁箔)，工件2與與石墨烯薄膜F與溶液S的界面呈約略30℃~45℃。Similarly, by the tension caused by the chloroform on the surface of the solution S, the graphene (or graphene film F) in the graphene solution G is attached to the surface of the workpiece 2 which has been hydrophilically treated on the surface (the workpiece 2 may be an aluminum foil), and the workpiece 2 and the interface with the graphene film F and the solution S are approximately 30 ° C ~ 45 ° C.
接著，再透過乾燥單元16並以150℃烘烤，以殘留在石墨烯薄膜F內的去除水與溶劑，以形成理想的石墨烯薄膜堆疊型態與方向性。此外，根據塗佈的次數與時間，本實施例可於工件2上形成厚度介於30μm~75μm的石墨烯薄膜F。Then, it is further passed through the drying unit 16 and baked at 150 ° C to remove water and solvent remaining in the graphene film F to form a desired graphene film stack pattern and directionality. Further, according to the number and time of coating, the present embodiment can form a graphene film F having a thickness of 30 μm to 75 μm on the workpiece 2.
最後，本創作更可包含一第三實施例，其石墨烯溶液G可由石墨烯與1mg/ml二甲基甲醯胺所組成。且供料單元12可為一內徑為100μm的針筒，以1ml/min的速率進料。並以80℃的去離子水作為溶液S。Finally, the present invention may further comprise a third embodiment, wherein the graphene solution G may be composed of graphene and 1 mg/ml dimethylformamide. And the feeding unit 12 can be a syringe having an inner diameter of 100 μm and fed at a rate of 1 ml/min. Deionized water at 80 ° C was used as the solution S.
透過二甲基甲醯胺在溶液S表面所造成的張力，石墨烯溶液G中的石墨烯(或稱石墨烯薄膜F)將會附著於工件2的表面(此實施例的工件或其表面可為聚酯(PET)材質)。此時，工件2與與石墨烯薄膜F與溶液S的界面呈約略75℃~90℃。Through the tension caused by the surface of the solution S of dimethylformamide, the graphene (or graphene film F) in the graphene solution G will adhere to the surface of the workpiece 2 (the workpiece of this embodiment or its surface may be It is made of polyester (PET). At this time, the interface between the workpiece 2 and the graphene film F and the solution S is approximately 75 ° C to 90 ° C.
接著，再透過乾燥單元16並以80℃烘烤，以殘留在石墨烯薄膜F內的去除水與溶劑，以形成理想的石墨烯薄膜堆疊型態與方向性。此外，根據塗佈的次數與時間，本實施例可於工件2上形成厚度介於1~30nm的石墨烯薄膜F於工件2表面。Then, it is further passed through the drying unit 16 and baked at 80 ° C to remove water and solvent remaining in the graphene film F to form a desired graphene film stack pattern and directionality. Further, according to the number and time of coating, the present embodiment can form a graphene film F having a thickness of 1 to 30 nm on the surface of the workpiece 2 on the workpiece 2.
承上所述，本創作利用將石墨烯溶液形成於溶液的表面形成一石墨烯薄膜，且工件得以通過石墨烯溶液與溶液的界面的方式，使得石墨烯薄膜形成於工件上。且此種製備方式將不囿限工件的表面形狀，換言之，可依據需求將石墨烯薄膜形成於電極、或是作為表面防腐蝕處理使用。As described above, the present invention forms a graphene film by forming a graphene solution on the surface of the solution, and the workpiece is passed through the interface between the graphene solution and the solution, so that the graphene film is formed on the workpiece. Moreover, the preparation method will not limit the surface shape of the workpiece, in other words, the graphene film may be formed on the electrode according to requirements or used as a surface anti-corrosion treatment.
此外，更可透過重複形成石墨烯薄膜，以產生排列方向一致且各層體間隔均勻的石墨烯薄膜，此種結構的石墨烯薄膜除了具優良的導電性以外，更可在各層體間形熱流的通道，形成優良的導熱材。In addition, the graphene film can be repeatedly formed to produce a graphene film having a uniform arrangement direction and uniform spacing between the layers. The graphene film of this structure can form a heat flow between the layers in addition to excellent conductivity. The channel forms an excellent heat conductive material.
故，透過上述配置本創作應可實現提供一種石墨烯產物具有方向性、便於量產的石墨烯薄膜的目的。Therefore, through the above configuration, the creation of the graphene film having the directionality and mass production of the graphene product should be achieved.
以上所述僅為舉例性，而非為限制性者。任何未脫離本新型之精神與範疇，而對其進行之等效修改或變更，均應包含於後附之申請專利範圍中。The above is intended to be illustrative only and not limiting. Any equivalent modifications or alterations to the spirit and scope of the present invention are intended to be included in the scope of the appended claims.
1‧‧‧裝置1‧‧‧ device
10‧‧‧槽體10‧‧‧
12‧‧‧供料單元12‧‧‧Feeding unit
14‧‧‧傳輸裝置14‧‧‧Transportation device
16‧‧‧乾燥單元16‧‧‧Drying unit
2‧‧‧工件2‧‧‧Workpiece
F‧‧‧石墨烯薄膜F‧‧‧ graphene film
G‧‧‧石墨烯溶液G‧‧‧graphene solution
S‧‧‧溶液S‧‧‧ solution
Claims (7)
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI600611B (en) * | 2014-01-29 | 2017-10-01 | 奈創國際控股有限公司 | Apparatus and method for formatting graphene film, and graphene film structure |
| CN115534368A (en) * | 2022-09-21 | 2022-12-30 | 湖北航天化学技术研究所 | Preparation method of graphene-based anti-migration layer |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI600611B (en) * | 2014-01-29 | 2017-10-01 | 奈創國際控股有限公司 | Apparatus and method for formatting graphene film, and graphene film structure |
| CN115534368A (en) * | 2022-09-21 | 2022-12-30 | 湖北航天化学技术研究所 | Preparation method of graphene-based anti-migration layer |
| CN115534368B (en) * | 2022-09-21 | 2024-04-05 | 湖北航天化学技术研究所 | Preparation method of graphene-based migration-preventing layer |
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