TWM477673U - Solar cell with improved backside structure - Google Patents
Solar cell with improved backside structure Download PDFInfo
- Publication number
- TWM477673U TWM477673U TW102222803U TW102222803U TWM477673U TW M477673 U TWM477673 U TW M477673U TW 102222803 U TW102222803 U TW 102222803U TW 102222803 U TW102222803 U TW 102222803U TW M477673 U TWM477673 U TW M477673U
- Authority
- TW
- Taiwan
- Prior art keywords
- area
- solar cell
- passivation layer
- semiconductor substrate
- bus bar
- Prior art date
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- 238000002161 passivation Methods 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims 1
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 5
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 5
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
本創作係有關於一種太陽能電池技術領域，特別是有關一種能提升焊帶(ribbon)焊接後拉力的PERC太陽能電池。This creation relates to the field of solar cell technology, and in particular to a PERC solar cell capable of improving the tensile force of a ribbon after welding.
近年來，隨著高效轉換太陽能電池的市場需求不斷提高，各種改善電池轉換消率的創新電池技術也逐一被開發出來，例如，稱做「PERC」的太陽能電池背面鈍化技術(PERC是passivated emitter and rear cell的縮寫)，即不同於以往利用網印鋁技術形成背面場域(back surface field,BSF)，其改以介電材質鈍化層，藉以獲得較佳的背面鈍化效果。In recent years, with the increasing market demand for high-efficiency conversion solar cells, various innovative battery technologies for improving battery conversion rate have been developed, for example, solar cell back passivation technology called "PERC" (PERC is passivated emitter and The abbreviation of the rear cell, which is different from the previous use of screen printing aluminum technology to form the back surface field (BSF), which is changed to a dielectric material passivation layer to obtain a better back passivation effect.
PERC太陽能電池的製造方法通常先進行晶圓表面清潔與粗糙化處理，然後進行擴散製程，在晶圓表面形成磷玻璃層及摻雜射極(emitter)區域，以蝕刻製程進行邊緣絕緣並去除磷玻璃層，再以電漿輔助化學氣相沈積(PECVD)於射極層上沈積介電材料，形成抗反射層，然後，以電漿輔助化學氣相沈積於電池背面形成背鈍化層，接著以雷射或蝕刻方式，將部分的背面鈍化層打開，再以網印技術形成電極圖案，例如於電池背面形成匯流排電極(bus bar)以及背電極，最後進行高溫燒結處理。The manufacturing method of the PERC solar cell is usually performed by cleaning and roughening the surface of the wafer, and then performing a diffusion process to form a phosphor glass layer and an emitter emitter region on the surface of the wafer, and performing edge etching and removing phosphorus by an etching process. a glass layer, followed by plasma-assisted chemical vapor deposition (PECVD) to deposit a dielectric material on the emitter layer to form an anti-reflective layer, and then plasma-assisted chemical vapor deposition on the back side of the cell to form a back passivation layer, followed by In a laser or etching manner, a part of the back passivation layer is opened, and an electrode pattern is formed by a screen printing technique, for example, a bus bar and a back electrode are formed on the back surface of the battery, and finally a high-temperature sintering process is performed.
然而，由於PERC太陽能電池結構的背面匯流排電極與矽基底之間存在有背鈍化層，影響到背面匯流排電極與矽基底的燒結合金狀態，故造成焊接後，焊帶的拉力值偏低。因此，該技術領域仍需要一種改良的太陽能電池及製造方法，以解決上述先前技藝之不足與缺點。However, since the back passivation layer exists between the back bus bar electrode and the germanium substrate of the PERC solar cell structure, the sintered alloy state of the back bus bar electrode and the germanium substrate is affected, so that the tensile force value of the solder ribbon is low after soldering. Accordingly, there remains a need in the art for an improved solar cell and method of manufacture that addresses the deficiencies and shortcomings of the prior art described above.
本創作之主要目的在提供一種具改良背結構之太陽能電池，能夠解決先前技藝焊帶在焊接後的拉力值不足的問題。The main purpose of the present invention is to provide a solar cell with an improved back structure, which can solve the problem of insufficient tensile force of the prior art solder ribbon after soldering.
根據本創作實施例，太陽能電池包含有一半導體基板，其具有一正面及一背面；一背鈍化層，覆蓋該半導體基板的該背面；至少一第一開口，設於該背鈍化層中，其具有一第一面積；複數個第二開口，設於該背鈍化層中；至少一匯流排電極，設於該背鈍化層上的一預定區域，並填入該第一開口中，使該匯流排電極與該半導體基板的該背面直接接觸，該預定區域具有一第二面積；以及一背電極，填入該複數個第二開口。According to the present embodiment, a solar cell includes a semiconductor substrate having a front surface and a back surface; a back passivation layer covering the back surface of the semiconductor substrate; at least one first opening disposed in the back passivation layer, a first area; a plurality of second openings disposed in the back passivation layer; at least one bus bar electrode disposed on a predetermined area on the back passivation layer and filled in the first opening to make the bus bar The electrode is in direct contact with the back surface of the semiconductor substrate, the predetermined region has a second area, and a back electrode is filled in the plurality of second openings.
為讓本創作之上述目的、特徵及優點能更明顯易懂，下文特舉較佳實施方式，並配合所附圖式，作詳細說明如下。然而如下之較佳實施方式與圖式僅供參考與說明用，並非用來對本創作加以限制者。The above described objects, features and advantages of the present invention will become more apparent from the following description. However, the following preferred embodiments and drawings are for illustrative purposes only and are not intended to limit the present invention.
10‧‧‧半導體基板10‧‧‧Semiconductor substrate
11‧‧‧背鈍化層11‧‧‧Back passivation layer
12a‧‧‧開口區域12a‧‧‧Open area
12b‧‧‧開口區域12b‧‧‧Open area
13‧‧‧匯流排電極13‧‧‧ Bus bar electrode
14a‧‧‧背電極14a‧‧‧Back electrode
14b‧‧‧背電極14b‧‧‧Back electrode
第1圖至第5圖例示本創作太陽能電池製造流程。Fig. 1 to Fig. 5 illustrate the manufacturing process of the solar cell of the present creation.
第6圖及第7圖例示背鈍化層的開口區域的其它可能形狀。Figures 6 and 7 illustrate other possible shapes of the open area of the back passivation layer.
第8圖例示不連續的匯流排電極位置及相應的背鈍化層的開口區域。Figure 8 illustrates the discontinuous bus bar electrode locations and the corresponding open regions of the back passivation layer.
請參閱第1圖至第5圖，例示本創作太陽能電池製造流程中的背面正視圖。如第1圖所示，首先提供一半導體基板10，例如，P型摻雜矽基板或矽晶圓，其厚度例如約180-200微米左右，但不限於此。Referring to Figures 1 through 5, a front elevational view of the solar cell manufacturing process of the present invention is illustrated. As shown in Fig. 1, first, a semiconductor substrate 10 such as a P-type doped germanium substrate or a germanium wafer having a thickness of, for example, about 180 to 200 μm is provided, but is not limited thereto.
雖然圖中未顯示，但熟習該技術領域者應理解在半導體基板10的正面(受光面)可另設有一摻雜射極層，例如，N型摻雜射極層，以及抗反射層，例如氮化矽或氧化矽等。Although not shown in the drawings, those skilled in the art should understand that a doped emitter layer, for example, an N-type doped emitter layer, and an anti-reflection layer may be additionally provided on the front surface (light-receiving surface) of the semiconductor substrate 10, for example. Niobium nitride or tantalum oxide.
由於本創作著重於太陽能電池背面結構改良，因此圖中僅顯示製造流程中半導體基板10的背面。Since this creation focuses on the improvement of the back surface structure of the solar cell, only the back surface of the semiconductor substrate 10 in the manufacturing process is shown in the drawing.
如第2圖所示，在半導體基板10的背面以電漿輔助化學氣相沈積(PECVD)沈積介電材料，例如氧化矽、氮氧化矽、氧化鋁、氮化矽或非晶矽等，形成背鈍化層11。As shown in FIG. 2, a dielectric material such as hafnium oxide, hafnium oxynitride, aluminum oxide, tantalum nitride or amorphous germanium is formed by plasma-assisted chemical vapor deposition (PECVD) on the back surface of the semiconductor substrate 10. Back passivation layer 11.
如第3圖所示，接著以雷射或蝕刻方式，將部分的背鈍化層11打開，形成開口區域12a以及開口區域12b。As shown in Fig. 3, a portion of the back passivation layer 11 is then opened by laser or etching to form an opening region 12a and an opening region 12b.
在第3圖中，另以虛線表示後續將以金屬導電漿印刷的匯流排電極(bus bar)的位置，其面積以面積B表示，而開口區域12a則以面積A表示，其中面積B大於或等於面積A，且面積B與面積A完全重疊。根據本創作實施例，面積A與面積B的比值(A/B)可介於0.1至1.0之間。In Fig. 3, the position of the bus bar which will be subsequently printed with the metal conductive paste is indicated by a broken line, the area of which is represented by the area B, and the open area 12a is represented by the area A, wherein the area B is larger than or Equal to area A, and area B completely overlaps area A. According to the present creative embodiment, the ratio of the area A to the area B (A/B) may be between 0.1 and 1.0.
此外，開口區域12a並不一定要像第3圖中所示的長條矩形，亦可以是其他各種圖案，如第6圖所示。且，開口區域12b不一定要像第3圖中所示的細長條狀，其可以是其他各種任意圖案，如第7圖所示。Further, the opening area 12a does not have to be an elongated rectangle as shown in FIG. 3, and may be other various patterns as shown in FIG. Further, the opening region 12b does not have to be elongated as shown in Fig. 3, and may be any other arbitrary pattern as shown in Fig. 7.
另外，匯流排電極的形狀可以是不連續的多條圖案，如第8圖中虛線區域所示，而開口區域12a也會配合匯流排電極的形狀，形成多個相應的開口。In addition, the shape of the bus bar electrode may be a plurality of discontinuous patterns, as shown by the broken line area in FIG. 8, and the opening region 12a may also conform to the shape of the bus bar electrode to form a plurality of corresponding openings.
如第4圖所示，在半導體基板10背面先以網印形成匯流排電極13，其中，通常是以銀漿網印形成匯流排電極13，此時，匯流排電極13完全覆蓋住開口區域12a，且透過開口區域12a，匯流排電極13可以直接接觸到半導體基板10背面。As shown in FIG. 4, the bus bar electrode 13 is first formed on the back surface of the semiconductor substrate 10 by screen printing. The bus bar electrode 13 is usually formed by silver paste screen printing. At this time, the bus bar electrode 13 completely covers the opening region 12a. And, through the opening region 12a, the bus bar electrode 13 can directly contact the back surface of the semiconductor substrate 10.
如第5圖所示，接著再於背鈍化層11及開口區域12b同時填入導電膠，如此形成背電極14a及背電極14b。As shown in Fig. 5, the back passivation layer 11 and the opening region 12b are simultaneously filled with a conductive paste, thereby forming the back electrode 14a and the back electrode 14b.
由於本創作開口區域12a的設置，增加了匯流排電極13與半導體基板10背面的接觸面積，因此可以改善背面匯流排電極與矽基底的燒結合金狀態，進而提升焊帶在焊接後的拉力值。Due to the arrangement of the created opening region 12a, the contact area between the bus bar electrode 13 and the back surface of the semiconductor substrate 10 is increased, so that the sintered alloy state of the back bus bar electrode and the ruthenium substrate can be improved, thereby increasing the tensile force value of the solder ribbon after soldering.
以上所述僅為本創作之較佳實施例，凡依本創作申請專利範圍所做之均等變化與修飾，皆應屬本創作之涵蓋範圍。The above descriptions are only preferred embodiments of the present invention, and all changes and modifications made by the scope of the patent application of the present invention should be covered by the present invention.
10‧‧‧半導體基板10‧‧‧Semiconductor substrate
11‧‧‧背鈍化層11‧‧‧Back passivation layer
12a‧‧‧開口區域12a‧‧‧Open area
12b‧‧‧開口區域12b‧‧‧Open area
A‧‧‧面積A‧‧‧ area
B‧‧‧面積B‧‧‧ area
Claims (6)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW102222803U TWM477673U (en) | 2013-12-04 | 2013-12-04 | Solar cell with improved backside structure |
| JP2014001399U JP3190982U (en) | 2013-12-04 | 2014-03-19 | Solar cell with improved back structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW102222803U TWM477673U (en) | 2013-12-04 | 2013-12-04 | Solar cell with improved backside structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWM477673U true TWM477673U (en) | 2014-05-01 |
Family
ID=51295081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102222803U TWM477673U (en) | 2013-12-04 | 2013-12-04 | Solar cell with improved backside structure |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP3190982U (en) |
| TW (1) | TWM477673U (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106952972B (en) * | 2017-03-03 | 2019-04-19 | 广东爱旭科技股份有限公司 | P-type PERC double-sided solar battery and its component, system and preparation method |
| CN107256898B (en) * | 2017-05-18 | 2018-08-03 | 广东爱旭科技股份有限公司 | Tubular type PERC double-sided solar batteries and preparation method thereof and special equipment |
| CN115000198B (en) * | 2022-07-18 | 2023-05-05 | 浙江晶科能源有限公司 | Solar cell and photovoltaic module |
-
2013
- 2013-12-04 TW TW102222803U patent/TWM477673U/en not_active IP Right Cessation
-
2014
- 2014-03-19 JP JP2014001399U patent/JP3190982U/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP3190982U (en) | 2014-06-05 |
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