TWM424460U - Optical lens with inflection point and light-emitting device consisting of the optical lens thereof - Google Patents

Optical lens with inflection point and light-emitting device consisting of the optical lens thereof Download PDF

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TWM424460U
TWM424460U TW100215394U TW100215394U TWM424460U TW M424460 U TWM424460 U TW M424460U TW 100215394 U TW100215394 U TW 100215394U TW 100215394 U TW100215394 U TW 100215394U TW M424460 U TWM424460 U TW M424460U
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Taiwan
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light
inflection point
optical axis
optical lens
optical
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TW100215394U
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Chinese (zh)
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Chih-Peng Wang
Huang-Chang Chen
Kuo-Hsuan Hsu
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E Pin Optical Industry Co Ltd
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Priority to TW100215394U priority Critical patent/TWM424460U/en
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M424460 五、新型說明: 【新型所屬之技術領域】 本創作是有關於一種光通里控制鏡片及其發光裝置,尤 其是關於一種適用於背光模組,產生光源且形成環狀光型的 具有反曲點的光學鏡月及其發光裝置。 【先前技術】 液晶顯示器係廣泛地應用於電視、筆記型電腦、平 版型電腦及手機等具有顯示功能的電子產品上。於液晶 顯示器中,已知可採用冷陰極螢光燈(CCFL)、場效發光 器(EL)與發光二極體(Light-emitting diodes, LED)等可見 光源來作為其背光源。近年來,由於LED具有光亮度均 勻、使用壽命長、體積自由度大、低電壓(或交流)驅動、 不需要逆變器、色域寬廣等的優點,使得LED漸漸取代 傳統的冷陰極螢光燈而成為主流的趨勢。 LED背光裝置係由多個LED排列成與液晶顯示器大 小相符的陣列。為使顯示器各點的光度均勻且儘量沒有 亮點產生’於習知技術中,主要藉由改良覆蓋於LED上 的光通量控制鏡片,使LED的亮度分布均勻。因此,現 今採用LED做為背光源的顯示器中,如何增進LED背 光源的光亮度均勻性或加大光分布範圍,則為主要的改 善重點’例如專利文獻1(美國專利號US7348723 B2)、 專利文獻2(美國專利號US7963680)、專利文獻3(美國專 利號US7621657)、專利文獻4(美國專利US7798679)、 3 M424460 專利文獻5(美國專利US7_44 B2)、專利文獻6(美國 專利US7766530)、專利文獻7(美國專利 US2〇09G116245)、專利文獻8(美國專利US7474475)及專 利文獻9(美國專利US7746565)。 專利文獻1揭露了一種鏡片及發光裳i,其發光裝 置1如第1圖所不’包含一固定於基板12的發光元件 11以及鏡片丨3。發光元件11係容置於鏡片13的凹槽 中’且光束自發光元#11發出後係穿透出鏡片13的 光出射面130。光出射面13〇包括第一出光區域咖以 及第二出光區域l30b,其中第一出光區域13〇a為向光 軸略微向下凹曲的凸起配置。發光裝置i構成的光型分 佈如第2圖,為一近軸區的亮度高於離軸區(off-axis region)亮度的單峰所構成的圓形光型。然而,如此的光 3!刀佈將造成各發光裝置丨的近軸區過亮而有均光性不 足的缺‘點’使其應用時容易在冑光模組產生亮點;且更 由=近軸區較亮,使得採用此發光裝置1的背光模組必 須縮短各發光裝置1間的距離,以解決均光性不足的問 題。再者,由於顯示螢幕趨於薄型化的需求以及 的考量,增加發光裝置!的散光性以縮短發光元件至液 晶面板的距離或增加各發光元件間的距離,是此類發光 裝置必須改進的問題。然而,若藉由增加光出射面130 的折射旎力以增加發光裝置丨的散光性,將可能導致菲 涅耳反射現象發生,而造成光通量降低。此外,由於發 光裝置1具有入射角愈大則出射角與入射角比值愈小, 以及當入射角大於半功率角的範圍 M424460 (half-mtenSity-angular-range)時,入射角等於出射角的特 性,造成入射角等於出射角的區域的光被集中而產生 了圍繞中央tc點的環狀亮線。進一步地,為了使此環狀 亮線不明顯,需藉由降低發光裝置丨的散光性而克服, 亦即此發光裝置1難以使散光性與均光性兼備。專利文 獻3所揭露的發光裝置類似於專利文獻丨,其同樣具有 近軸區過亮且難以達到高散光性要求的缺點。 專利文獻6揭露了 一種發光裝置,其光學鏡片的入 射面及出射面皆設有凸面及凹面,其中各凸面皆設置於 發光裝置的光軸上,而各凹面係位於鏡片的邊緣處且 兩凸面間及兩凹面間的曲率不同’進而形成近似鐘型的 鏡片。然而,其亦為近軸區亮度較高的設計,且由於各 凹面係使側向光束被折射成向上光束,而各凸面係使向 上光束被折射成側向光束,故此類發光裝置仍具有均光 性及散光性不足的缺點。 專利文獻5、7則是進一步的揭露了入射面具有鋸齒 狀結構與凹部的光學鏡片,以達到散熱及避免產生環形 光圈的目的,然而其同樣為近軸區亮度較高的設計,而 無法滿足高均光與高散光性的需求。 為了加強發光裝置的散光性,於專利文獻2、4、8 及9所揭露的發光裝置的光學鏡片中,其入射侧皆具有 凹槽(或凹曲部)且出射側皆具有設置於中央的凹部與 繞該凹部的凸部。其中’專利文獻2的光學鏡片之出、射 面的中央凹部為錐狀且入射側的凹槽為圓頭的子彈狀, 5M424460 V. New description: [New technical field] This creation is about a light-controlled lens and its illuminating device, especially for a backlight module, which generates a light source and forms an annular light type. The optical lens of the curved point and its illuminating device. [Prior Art] Liquid crystal displays are widely used in electronic products with display functions such as televisions, notebook computers, lithographic computers, and mobile phones. In liquid crystal displays, it is known to use a visible light source such as a cold cathode fluorescent lamp (CCFL), an field effect illuminator (EL), and a light-emitting diode (LED) as its backlight. In recent years, LEDs have gradually replaced traditional cold cathode fluorescent lamps due to their advantages of uniform brightness, long service life, large volume freedom, low voltage (or AC) drive, no inverter, wide color gamut, etc. The trend of lights has become mainstream. The LED backlight device is an array in which a plurality of LEDs are arranged to match the size of the liquid crystal display. In order to make the luminosity of each point of the display uniform and as little as possible, in the prior art, the brightness distribution of the LED is made uniform by mainly improving the light flux controlling the lens covering the LED. Therefore, in today's displays using LEDs as backlights, how to improve the brightness uniformity of LED backlights or increase the range of light distribution is the main improvement focus, for example, Patent Document 1 (US Patent No. US7348723 B2), Patent Document 2 (U.S. Patent No. 7,963,680), Patent Document 3 (U.S. Patent No. 7,621,657), Patent Document 4 (U.S. Patent No. 7,798,679), 3, M424,460, 5 (U.S. Patent No. 7-44 B2), Patent Document 6 (U.S. Patent No. 7,766,530), Patent Document 7 (U.S. Patent No. 2,086,116,245), Patent Document 8 (U.S. Patent No. 7,474,475), and Patent Document 9 (U.S. Patent No. 7,745,565). Patent Document 1 discloses a lens and a light-emitting device i, and the light-emitting device 1 does not include a light-emitting element 11 and a lens unit 3 fixed to the substrate 12 as shown in Fig. 1. The light-emitting element 11 is received in the recess of the lens 13 and the light beam is emitted from the light-emitting element #11 and penetrates the light exit surface 130 of the lens 13. The light exiting surface 13A includes a first light exiting area and a second light exiting area l30b, wherein the first light exiting area 13a is a convex configuration that is slightly concave downward toward the optical axis. The light distribution of the light-emitting device i is as shown in Fig. 2, which is a circular light pattern in which the brightness of the paraxial region is higher than that of the off-axis region. However, such a light 3! knife cloth will cause the near-axis area of each of the light-emitting devices to be too bright and have a lack of light-spotting 'points', making it easy to produce bright spots in the calender module when applied; The shaft area is brighter, so that the backlight module using the light-emitting device 1 must shorten the distance between the light-emitting devices 1 to solve the problem of insufficient homogenization. Furthermore, due to the demand for the display screen to be thinner and the considerations, the lighting device is added! The astigmatism is a problem that such a light-emitting device must be improved in order to shorten the distance from the light-emitting element to the liquid crystal panel or to increase the distance between the respective light-emitting elements. However, if the refractive power of the light-emitting surface 130 is increased to increase the astigmatism of the light-emitting device, it may cause the Fresnel reflection phenomenon to occur, resulting in a decrease in luminous flux. In addition, since the illumination device 1 has a larger incident angle, the ratio of the exit angle to the incident angle is smaller, and when the incident angle is greater than the range of the half power angle M424460 (half-mtenSity-angular-range), the incident angle is equal to the characteristic of the exit angle. The light that causes the area of incidence equal to the exit angle is concentrated to produce a ring-shaped bright line around the center tc point. Further, in order to make the ring-shaped bright line inconspicuous, it is necessary to overcome the astigmatism of the light-emitting device ,, that is, the light-emitting device 1 is difficult to achieve both astigmatism and homogenization. The illuminating device disclosed in Patent Document 3 is similar to the patent document 丨, which also has the disadvantage that the paraxial region is too bright and it is difficult to achieve high astigmatism requirements. Patent Document 6 discloses a light-emitting device in which an incident surface and an exit surface of an optical lens are provided with a convex surface and a concave surface, wherein each convex surface is disposed on an optical axis of the light-emitting device, and each concave surface is located at an edge of the lens and has two convex surfaces. The curvature between the two concave surfaces is different, which in turn forms an approximately bell-shaped lens. However, it is also a design with a relatively high brightness in the paraxial region, and since each concave surface causes the lateral beam to be refracted into an upward beam, and each convex surface causes the upward beam to be refracted into a lateral beam, such a light-emitting device still has Shortcomings of insufficient light and astigmatism. Patent Documents 5 and 7 further disclose an optical lens having a sawtooth structure and a concave portion on the incident surface for the purpose of dissipating heat and avoiding the generation of an annular aperture. However, it is also a design with a high brightness in the paraxial region, which cannot be satisfied. High average light and high astigmatism demand. In order to enhance the astigmatism of the illuminating device, in the optical lens of the illuminating device disclosed in Patent Documents 2, 4, 8 and 9, the incident side has a groove (or a concave curved portion) and the exit side has a central portion. a recess and a protrusion around the recess. In the optical lens of Patent Document 2, the central concave portion of the emitting surface is tapered, and the concave groove on the incident side is a bullet of a round head, 5

hOU 其入射側的凹槽的開口直徑小於 部處僅發生折射而不反射。如 巧片覆蓋於LED上時’會產生一光分佈較廣 冗度較弱的光型’然而如此的設計於實際使用 法解決增加離軸區與近軸區的亮度比值而無 程複雜而提高不良=== 上丰夕虽專利文獻4的光學鏡片覆蓋於LED 近軸區凴度過高且散光性不夠的缺點。 極獻8、9分別揭露了 —種發光裝置,其發光二 比言Λ :右一面f均較為複雜’其鏡片的出射侧之光軸上 片A 1+Λ凹ί,且入射至凹部的光束會被全反射至鏡 4 °卩,藉此,減弱近軸區的光強度並增加光的發 外’上述的發光裝置可經由覆蓋光擴散板將 ^線向内部或外部補償,使其錢度可均勻分布。其中, 利文獻8發光二極體鏡片的各表面可為單一直徑的球 =成亦可為包含不同直徑的多曲率所構成的多球 面。專利文獻9之鏡片的光出射側自中央至外圍 J由凹部、平坦面、曲面及垂直面所構成。然而,專利 、8 9除了有加工繁雜的缺點外,其複合球面的面形 逛導致鏡片的體積較大且精度較低。 # 1從廣義上來說,除了球面和平面以外的表面都可以 非球面,包括非對稱性的空間曲面(或稱自由曲 :)。由於非球面鏡;^簡化Μ裝置的結構、減小系統 的尺寸和重量等方面有顯著的作用,因此非球面鏡片在 M424460 各領域的光電儀器中得到愈來愈廣泛的應用。 右應用於液晶螢幕的LED組件設計不良時,可能會 造成免點、色差、需高密度佈局或增加其他可加強均光 等功效的元件的配置的缺點。其中,# led組件具有近 軸區亮度過高的問題時’可能會導致色差而影響液晶螢 幕的演色性。此外,高密度佈局的LED組件更影響了製 k成本、散熱及裝置壽命,而增加其他元件的配置更影 響了顯tf營幕的體積。由於顯示螢幕趨於薄型化、晝質 擬真及成本最小化的需求’如何在高均光度的要求下同 時增加發光裝置的散光性與降低色差,為^見今LED背光 模組的製造商急欲改善的問題。 【新型内容】 本創作主要目的在於提供一種具有反曲點的光學 鏡片及其發絲置,以應用於LED背光模組中。藉此, 形成:近軸區亮度低於離軸區亮度的環狀光型,並提高 光發散角度(emission angle)使環狀光型適當的趨向於 f軸區,以提升顯示品質、降低色差及滿足高均光與高 散光性的需求,並有效減少LEd組件的配置數目進而減 / LED旁光模組的體積、減少背光模組中熱能的累積與 降低成本。 ' 根據本創作之目的,提出一種具有反曲點的光學鏡 片,其適用於發光二極體背光源之一發光裝置,該發光 裝置包含一發光二極體晶片及該具有反曲點的光學鏡 片,具有反曲點的光學鏡片係設置於發光二極體晶片之 7 M424460 上緣具有反曲點的光學鏡片係包含一光入射面與一光 出射面。具有反曲點的光學鏡片的光入射面包含形狀為 戴頭圓錐凹穴的光折射部,該光折射部係對稱地設置於 具有反曲點的光學鏡片的光轴上,且具有一開口、一頂 /面及一斜面。於光折射部中,開口的直徑大於頂面的直 徑,頂面與所述開口對應地設置;而斜面係連接開口與 頂面,且與平行於光軸的軸線具有一夾角。其中,來自 於該發光二極體晶片的光束係於光折射部之表面發生 折射。另外,具有反曲點的光學鏡片之光出射面為一對 稱於光軸的非球面,該光出射面包含一凹陷部及一凸出 部,該凹陷部係位於光出射面的中央;該凸出部係連接 於該凹陷部之外圍且其表面具有至少一反曲點。其中, 該凸出部的反曲點於光出射面的位置滿足式(1)的條 件: 45〇$θβ70。; ⑴ 其中,θί為反曲點至發光二極體晶片的發光面中心 的連線與光軸的夾角。 進一步地,於具有反曲點的光學鏡片中,光入射面 的光折射部滿足式(2)的條件:hOU The opening diameter of the groove on the incident side is smaller than that at the portion where it is refracted and not reflected. If the chip covers the LED, it will produce a light pattern with a lighter distribution and less redundancy. However, the design is used in practical ways to increase the brightness ratio between the off-axis area and the paraxial area. Poor === Shangfeng Xi Although the optical lens of Patent Document 4 covers the shortcomings of the LED in the paraxial region, the degree of twist is too high and the astigmatism is insufficient. In particular, 8 and 9 respectively disclose a kind of illuminating device, which has a luminous illuminating ratio: the right side f is more complicated 'the optical axis of the exit side of the lens is A 1 + Λ concave ί, and the light beam incident on the concave portion It will be totally reflected to the mirror 4 ° 卩, thereby weakening the light intensity of the paraxial region and increasing the light out of the light. The above-mentioned illuminating device can compensate the internal or external line by covering the light diffusing plate, making it cost. Can be evenly distributed. Wherein, each surface of the light-emitting diode lens may be a single-diameter ball = or may be a multi-spherical surface composed of multiple curvatures of different diameters. The light exit side of the lens of Patent Document 9 is composed of a concave portion, a flat surface, a curved surface, and a vertical surface from the center to the outer periphery. However, in addition to the disadvantages of complicated processing, the patented surface has a large volume and low precision of the composite spherical surface. # 1 In a broad sense, surfaces other than spheres and planes can be aspherical, including asymmetrical spatial surfaces (or free curved :). Aspherical lenses are becoming more and more widely used in optoelectronic instruments in various fields of M424460 due to their significant role in simplifying the structure of the device and reducing the size and weight of the system. When the right LED component applied to the LCD screen is poorly designed, it may cause disadvantages such as point-free, chromatic aberration, high-density layout, or other configuration of components that enhance the function of homogenizing. Among them, the #led component has a problem that the brightness of the paraxial region is too high, which may cause chromatic aberration and affect the color rendering of the liquid crystal screen. In addition, high-density LED components affect the cost, heat dissipation, and device life, while the addition of other components affects the volume of the tf. As the display screen tends to be thinner, enamel and cost-effective, 'how to increase the astigmatism of the illuminating device and reduce the chromatic aberration under the requirement of high average luminosity, the manufacturer of LED backlight module is urgent The problem to be improved. [New content] The main purpose of this creation is to provide an optical lens with a recurve point and its hairline for use in an LED backlight module. Thereby, an annular light pattern in which the brightness of the paraxial region is lower than the brightness of the off-axis region is formed, and the light emission angle is increased, so that the annular light pattern appropriately tends to the f-axis region to improve display quality and reduce chromatic aberration. And to meet the requirements of high uniformity and high astigmatism, and effectively reduce the number of LEd components configured to reduce the size of the LED backlight module, reduce the accumulation of thermal energy in the backlight module and reduce costs. According to the purpose of the present invention, an optical lens having an inflection point is proposed, which is suitable for a light-emitting device of a light-emitting diode backlight, the light-emitting device comprising a light-emitting diode chip and the optical lens having an inflection point The optical lens having an inflection point is disposed on the upper surface of the light-emitting diode chip. The optical lens having an inflection point on the upper edge of the M424460 includes a light incident surface and a light exit surface. The light incident surface of the optical lens having the inflection point includes a light refraction portion shaped as a head conical recess, the light refraction portion being symmetrically disposed on the optical axis of the optical lens having the inflection point, and having an opening, One top/face and one slope. In the light refracting portion, the diameter of the opening is larger than the diameter of the top surface, and the top surface is disposed corresponding to the opening; and the slope connects the opening to the top surface and has an angle with an axis parallel to the optical axis. The light beam from the light-emitting diode wafer is refracted on the surface of the light-refracting portion. In addition, the light exit surface of the optical lens having the inflection point is an aspheric surface symmetrical with respect to the optical axis, and the light exit surface includes a concave portion and a convex portion, and the concave portion is located at the center of the light exit surface; The outlet is connected to the periphery of the recess and has a surface having at least one inflection point. Wherein, the position of the inflection point of the convex portion on the light exit surface satisfies the condition of the formula (1): 45 〇 $ θ β 70. (1) where θί is the angle between the line of the inflection point and the center of the light-emitting surface of the light-emitting diode wafer and the optical axis. Further, in the optical lens having the inflection point, the light refraction portion of the light incident surface satisfies the condition of the formula (2):

Di^0.5*Lt ; ⑺ 其中’D】為光折射部的頂面與光軸的交點至光出 射面之凹陷部的表面與光軸的交點之距離;一為光出射 面任一點沿光軸方向至光入射面之距離的最大值。 進一步地,於具有反曲點的光學鏡片中,光入射面 的光折射部之頂面可為平坦面或面向光折射部之開口 M424460 的凹面。 進一步地,為利於製造及避免光線 之斜面與頂面連接處可設有倒角;= 先線有农大利料,可於斜面鄰接開口處 (不:;:吟微^ 不規則表面’不為所限。 進步地,於具有反曲點的光學鏡片中,光出Di^0.5*Lt ; (7) where 'D' is the distance from the intersection of the top surface of the light-refractive part and the optical axis to the intersection of the surface of the concave portion of the light-emitting surface and the optical axis; one is the light-emitting surface at any point along the optical axis The maximum distance from the direction to the light incident surface. Further, in the optical lens having the inflection point, the top surface of the light refracting portion of the light incident surface may be a flat surface or a concave surface facing the opening M424460 of the light refracting portion. Further, in order to facilitate the manufacture and avoiding the connection between the slope of the light and the top surface, a chamfer may be provided; = the first line has a large agricultural material, and the inclined surface may abut the opening (not:;: 吟 micro ^ irregular surface 'not Progressively, in optical lenses with inflection points, light out

之凹部進-步包含—截平面,且其設置於具有反曲 的光學鏡片的近軸處且垂直於光軸 進一步地,於具有反曲點的光學鏡片中,光出射面 之凹為自凸出部的内緣朝光入射面的方向下凹並 於光軸上形成-頂點的凹面’且該凹陷部的凹面面向光 入射面。亦即’於凹陷部中,自凹陷部的能起至凸出 4的内緣’其凹陷部表面以絲方向至鏡片巾心點切平 面的距離(SAG值)逐漸增加。 進一步地,於具有反曲點的光學鏡片中,光入射面 的光折射部進一步滿足式(3)的條件: 0 = tan(0s) ^ 1 ; (3) 其中,es為光折射部的斜面與平行於光軸的軸線間 的夾角。 進一步地,該具有反曲點的光學鏡片的光出射面之 凸出部至少包含第一反曲點及第二反曲點,其中第一反 曲點位於凹陷部與第二反曲點之間,並滿足式(4)及式(5) 的條件: 9 M424460 450以丨<55。;以及 55。W” ::(5). 而士、I ·θ,1為第一反曲點至發光二極體晶片的發光 面中:的連線與光轴的夾角;h為第二反曲點至發光 一極體曰曰片的發光面中心的連線與光軸的夹角。 :據本創作之目的,再提出一種發光裝置其包含 :二it光二極體晶片以及一具有反曲點的光學鏡 ^。所述發光二極體晶片係固定於基板上,用以發出一 所述具有反曲點的光學鏡片係設置於發^二極體 Β曰片之上緣’使該具有反曲點的光學鏡片的—光轴係垂 於該發光一極體晶片之發光面。對於較精確的要求, 可使/、有反曲點的光學鏡片的光軸通過發光二極體晶 二之發光面的幾何中心。該具有反曲點的光學鏡片包含 光入射面及一光出射面,經由光入射面入射且出射於 光出射面的來自發光二極體晶片的光束係以光軸為中心 形成央較暗且週圍較亮的環狀光型,該環狀光型包 括-向兜度區與-中央暗區,該高亮度區環繞該中央暗 區之外圍’該環狀光型係滿足式⑹至式⑻的條件: (6) 3<^<35 其中The recess further comprises a truncated plane, and is disposed at a paraxial axis of the optical lens having recurve and perpendicular to the optical axis. In the optical lens having an inflection point, the concave of the light exit surface is self-convex The inner edge of the outer portion is recessed in the direction of the light incident surface and forms a concave surface of the apex on the optical axis and the concave surface of the depressed portion faces the light incident surface. That is, in the depressed portion, the distance from the edge of the depressed portion to the inner edge of the projection 4 gradually increases the distance (SAG value) of the surface of the depressed portion from the wire direction to the tangent plane of the lens center. Further, in the optical lens having the inflection point, the light refraction portion of the light incident surface further satisfies the condition of the formula (3): 0 = tan(0s) ^ 1 ; (3) where es is the slope of the light refraction portion An angle with an axis parallel to the optical axis. Further, the protrusion of the light exit surface of the optical lens having the inflection point includes at least a first inflection point and a second inflection point, wherein the first inflection point is located between the recess and the second inflection point And satisfy the conditions of formula (4) and formula (5): 9 M424460 450 to 丨 <55.; and 55. W":(5). And I, θ, 1 is the angle between the first inflection point and the light-emitting surface of the light-emitting diode wafer: the angle between the line and the optical axis; h is the second inflection point to The angle between the line connecting the center of the light-emitting surface of the light-emitting diode and the optical axis. According to the purpose of the present invention, a light-emitting device comprising: a second photodiode wafer and an optical with an inflection point is proposed. The light-emitting diode chip is fixed on the substrate, and is configured to emit an optical lens having an inflection point disposed on the upper edge of the hairpin diode to make the inflection point The optical axis of the optical lens hangs from the light emitting surface of the light emitting body chip. For more precise requirements, the optical axis of the optical lens having the inflection point can pass through the light emitting surface of the light emitting diode crystal 2 The optical lens having the inflection point includes a light incident surface and a light exit surface, and the light beam from the light emitting diode wafer incident through the light incident surface and emerging from the light exit surface is centered on the optical axis. a ring-shaped light type that is darker and brighter around, and the ring-shaped light type includes a -to-band area and - Conditions dark areas, the high luminance region which surrounds the periphery of the central dark area "of the ring-type optical system to satisfy the formula ⑹ ⑻ the formula: (6) 3 < ^ < 35 wherein

⑺,及 M424460 珥=90°-siiT1 i nd .....(8) 曰其中,k為環狀光型的高亮度區與中央暗區的光通 量比值’ I為在θ角度下的光強度,Θ為環狀光型任一 點至發光二極體晶片的發光面中心的連線與光軸的夾 角;θτ為光出射面的全反射臨界角相對於光軸之補角; ΘΜ為發光二極體晶片之發光面中心至環狀光型的光強 度峰值的連線與光軸間的夾角;η〗為空氣的折射率;以 為該具有反曲點的光學鏡片的折射率。(7), and M424460 珥=90°-siiT1 i nd ..... (8) 曰 where k is the luminous flux ratio of the high-luminance region and the central dark region of the ring-shaped light type 'I is the light intensity at the angle θ Θ is the angle between the line connecting the center of the light-emitting surface of the light-emitting diode chip and the optical axis from any point of the annular light type; θτ is the complementary angle of the total reflection critical angle of the light exit surface with respect to the optical axis; The angle between the line connecting the center of the light-emitting surface of the polar body wafer to the peak of the light intensity of the annular light type and the optical axis; η is the refractive index of the air; and the refractive index of the optical lens having the inflection point.

於本創作的發光裝置的具有反曲點的光學鏡片 中,具有反曲點的光學鏡片之光入射面包含一光折射 部,該光折射部係對稱於具有反曲點的光學鏡片的光軸 且具有一開口、一頂面及一斜面。其中,開口的直徑大 於頂面的直徑’開口設置於發光二極體晶片的發光工面 上,頂面係與開口對應地設置,斜面係連接開口與頂 面,且與平行於鏡片光軸的軸線具有一夾角。其中、,來 自於發光二極體晶片的光束係於光入射面的光折射部 ^表面發生折射。另外’具有反曲點的光學鏡片之 射面為-對稱於光軸的非球面,且包含—凹陷部及一凸 述凹陷部係位於光出射面的所述凸出部 =連接於凹陷部之外心其表面具有至少—反曲點」 中,反曲點於光出射面的位置滿足式(1)的條件。 之光於發光裝置中,具有反曲點的光學鏡片 射:之凹陷部為自凸出部的内緣朝光入射面的 方向下凹趣料上形成—頂㈣凹面, 的 凹面面向光入射面,且所述環狀光型的高亮度區= M424460 暗區的光通量比值(表示為k)係進一步地滿足式(9)、式 (7)及式(8)的條件: S<k<35 ......(9) 進一步地,於發光裝置中,具有反曲點的光學鏡片 的光出射面之凹陷部進一步包含一截平面,此截平面設 置於具有反曲點的光學鏡片的近軸處且垂直於光軸且 所述環狀光型的高亮度區與中央暗區的光通量比值(表 示為k)係進一步地滿足式(1〇)、式(7)及式(8)的條件: 3幺灸幺8 ......(1〇) # 藉由本創作之具有反曲點的光學鏡片及其發光裝 置’可具有下列一個或多個優點: (1) 藉由本創作的具有反曲點的光學鏡片及其發光 裝置’可產生滿足式(6)條件的環狀光型並同時提高光發 散角’以改善近軸區過亮的問題及增進色均勻度。此外, 更可有效地減少背光模組中的發光裝置與其他可加強均 光等功效的元件的配置數量,進而減少LED背光模組的 體積、減少背光模組中熱能的累積與降低成本。 _ (2) 本創作的發光二極體鏡片藉由光出射面為非球 -面的結構,可增加控制光分佈的範圍的精度,並有效降 · 低鏡片的體積,如此一來,亦有助於降低LED背光模組 的體積。 (3) 本創作的發光二極體鏡片藉由光入射面的光折 射部使光束發生偏折,並搭配光出射面為非球面且具有 中央凹陷部與反曲點的結構及式(丨),可使得部份或全部 12 M424460 入射至凹卩曰部及反曲點附近區域的光束發生全反射,進 T產生離軸區的光強度大於近軸區的光強度至少三倍的 壤狀光型。藉此,侷限光分佈的範圍而形捕^光型並 改善近軸區過亮的問題及提高色均勻度。 (4)本創作之具有反曲點的光學鏡片及其發光裝置 藉由於光出射面設置不同結構態樣的凹陷部,例如具有 負曲率或進一步設置有截平面的凹陷部,而改變近軸區 的光型分佈及環狀光型的高亮度區與中央暗區的光通量 比值,以進一步得到符合式(9)或式(1〇)的環狀光型。 + (5)本創作之具有反曲點的光學鏡片及其發光裝置 可藉由於式(3)的限制中降低光折射部的斜面之斜率,並 與反曲點位置及其附近面型做全反射區域設計的搭配, 可進一步地提高環狀光型的高亮度區與中央暗 值。 片及其發光裝置 可進一步控制光 ’可對應得到較In the optical lens having the inflection point of the light-emitting device of the present invention, the light incident surface of the optical lens having the inflection point includes a light refraction portion symmetrical to the optical axis of the optical lens having the inflection point And having an opening, a top surface and a slope. Wherein, the diameter of the opening is larger than the diameter of the top surface. The opening is disposed on the light-emitting surface of the light-emitting diode wafer, and the top surface is disposed corresponding to the opening, and the inclined surface is connected to the opening and the top surface, and is parallel to the axis of the optical axis of the lens. Has an angle. Wherein, the light beam from the light-emitting diode wafer is refracted on the surface of the light refracting portion of the light incident surface. In addition, the 'optical surface of the optical lens having the inflection point is an aspheric surface symmetrical with respect to the optical axis, and the convex portion including the concave portion and the convex concave portion are located at the light exit surface=connected to the concave portion In the outer core, the surface has at least - an inflection point, and the position of the inflection point on the light exit surface satisfies the condition of the formula (1). In the light-emitting device, the optical lens having the inflection point is: the concave portion is formed from the inner edge of the protruding portion toward the light incident surface, and the concave surface faces the light incident surface. And the luminous flux ratio of the ring-shaped light type = M424460 dark region (expressed as k) further satisfies the conditions of the formula (9), the formula (7), and the formula (8): S<k<35 (9) Further, in the illuminating device, the recessed portion of the light exit surface of the optical lens having the inflection point further includes a section plane disposed on the optical lens having the inflection point The luminous flux ratio (expressed as k) at the paraxial axis and perpendicular to the optical axis and the high-luminance region and the central dark region of the annular light pattern further satisfy the equations (1〇), (7), and (8) Conditions: 3 Acupuncture 幺8 ......(1〇) # The optical lens with its inflection point and its illuminating device by the present invention can have one or more of the following advantages: (1) By this creation An optical lens having an inflection point and its illuminating device' can generate an annular light pattern satisfying the condition of the formula (6) while improving light emission The angle of divergence is used to improve the problem of excessive brightness in the paraxial region and to improve color uniformity. In addition, the number of components of the backlight device and other components capable of enhancing the uniformity and the like can be effectively reduced, thereby reducing the volume of the LED backlight module, reducing the accumulation of heat energy in the backlight module, and reducing the cost. _ (2) The light-emitting diode lens of the present invention has an aspherical-surface structure through the light exit surface, which can increase the precision of controlling the range of light distribution, and effectively reduce the volume of the lens, and thus, Helps reduce the size of the LED backlight module. (3) The light-emitting diode lens of the present invention deflects the light beam by the light refraction portion of the light incident surface, and is configured to have a structure and a formula in which the light exit surface is aspherical and has a central depressed portion and an inflection point (丨) The light beam of part or all of the 12 M424460 incident into the concave portion and the vicinity of the inflection point is totally reflected, and the light intensity of the off-axis region is at least three times greater than that of the paraxial region. type. Thereby, the range of the light distribution is limited to capture the light type and improve the problem of excessive brightness in the paraxial region and improve the color uniformity. (4) The optical lens having the inflection point of the present invention and the illuminating device thereof change the paraxial region by providing recesses of different structural features, such as recesses having a negative curvature or further having a truncated plane, due to the light exit surface The light type distribution and the luminous flux ratio of the high-luminance region of the annular light type and the central dark region are further obtained to obtain an annular light pattern conforming to the formula (9) or the formula (1). + (5) The optical lens with the inflection point of the present invention and its illuminating device can reduce the slope of the slope of the light refraction portion by the limitation of the formula (3), and complete the position with the inflection point and its vicinity. The combination of the reflective area design can further improve the high brightness area and the central dark value of the annular light type. The film and its illuminating device can further control the light

(6)本創作之具有反曲點的光學鏡 藉由光折射部進一步滿足式(2)之條件, 分佈的區域,當D〗與Lt的比值較小時 廣之光分佈範圍。 (7)本創作之具有反曲點的光學鏡片及其發光裝置 可藉由使㈣射料頂面為凹面,進—步地降低光轴處 的亮度。 W本創作《具有反曲點的光學鏡片及其發光裝置 可藉由於光出射面的凸出部設置第一反曲點及第二反曲 點,且此二反曲點的位置滿足式⑷及式(5),而進一步褐 限光分佈的範圍。當欲得到較細的環狀光型時,可降低 13 M424460 當欲提高最大有效光發散角同時 m型較粗時,可提高各反曲點至發光二極體的發 先面之光轴中心的連線與絲的夾角, 間的角度差。藉此,使得具有特定光型的具有反二: 光學鏡片及其發光裝置更容易製作。 ‘·、 【實施方式】 2賴作更μ確詳實,㈣舉較佳實施例益配 &下列圖^將本創作之結構及其技術特徵料如後。 請參閱第3圖,其料賴作之具 :=發光裝置的結構示意圖。本創作之發光 k用於發光—極體背域財,其包括基板3 =片二及具有反曲點的光學鏡片5β其中,發光:極 體曰θ片4係設置於基板3上,而具有反曲點的光學鏡片5 係設置於發光二極體晶片4之上緣,使具有;5 學鏡片5的一光軸Z垂直於發光二極體晶片*之發光面。 對於較精確的組合卫#,可使具妓曲點的光學鏡片$ 之光軸Z通過發光二極體晶片4的發光面之幾何中心。 曰:片4可被例如石夕氧樹脂的黏膠層所覆蓋並 固疋於基板上,於黏膠層中更可包括例如螢絲 轉換物質。製作具有反曲點的光學鏡片5的材料可為^ 璃或透明樹脂’透明樹脂例如聚甲基丙烯酸甲、醋 (polymethyl methacrylate, PMMA)、平山办 (polycarbonate,PC)、聚乳酸(PLA),但不為 省成本,可採用折射率為L49至M3的光學塑料為了即 M424460(6) The optical mirror having the inflection point of the present invention further satisfies the condition of the formula (2) by the light refraction portion, and the distribution range is broadly distributed when the ratio of D〗 to Lt is small. (7) The optical lens having the inflection point of the present invention and the illuminating device thereof can further reduce the brightness at the optical axis by making the top surface of the (4) projecting material concave. The present invention has an optical lens having an inflection point and a light-emitting device thereof, wherein the first inflection point and the second inflection point are set by the convex portion of the light exit surface, and the positions of the two inflection points satisfy the formula (4) and Formula (5), and further limits the range of brown light distribution. When a thin ring shape is desired, the 13 M424460 can be lowered. When the maximum effective light divergence angle is to be increased and the m type is thicker, the recurve point can be increased to the center of the optical axis of the light-emitting diode. The angle between the line and the wire is not the same. Thereby, the anti-two: optical lens having a specific light type and its light-emitting device are made easier to manufacture. ‘·· [Embodiment] 2 is more detailed, (4) better embodiment of the benefits & The following figure ^ will be the structure of this creation and its technical features as follows. Please refer to Figure 3, which is expected to be based on: = Schematic diagram of the light-emitting device. The illuminating light k of the present invention is used for illuminating-polar body back domain, which comprises a substrate 3 = a sheet 2 and an optical lens 5β having an inflection point. wherein, the illuminating: the polar body 曰 θ sheet 4 is disposed on the substrate 3, and has The optical lens 5 of the inflection point is disposed on the upper edge of the LED substrate 4 such that an optical axis Z of the lens 5 is perpendicular to the light emitting surface of the LED substrate*. For a more precise combination, the optical axis Z of the optical lens with the curved point can pass through the geometric center of the light-emitting surface of the LED wafer 4.曰: The sheet 4 may be covered with an adhesive layer such as a diarrhea resin and fixed to the substrate, and may further include, for example, a filament conversion substance in the adhesive layer. The material for producing the optical lens 5 having the inflection point may be a transparent resin such as polymethyl methacrylate (PMMA), polycarbonate (PC), or polylactic acid (PLA). However, it is not cost-effective, and optical plastics with refractive indices of L49 to M3 can be used.

包括一光入射面50及一光 出射面51。於光入射面50的中央處,設置有一對稱於光 軸Z的光折射部501用以接收來自發光二極體晶片4的 光束,其係設置於發光二極體晶片4的發光面上,並與 發光二極體晶片4產生一間隔。其中,光入射面5〇更可 包括一平坦面502’該平坦面5〇2係自光折射部5〇1的開 口端延伸出並與光出射面51相接。於較佳的實施例中, 光入射面50的平坦面502上可鍍有反射層或貼上可反射 光的材質,以增加發光裝置2的光利用率。於較佳的實 施例中,發光二極體晶片4並非容置於光折射部5〇1中, 亦即,開口 501a的水平面係位於發光二極體晶片4的發 光面之上或恰好與其相疊,即位於其上緣,如此一來ς 更有利於散熱。光折射部501具有一開口 5〇la、一頂面 501b及一斜面501c ’其沿光轴2之剖面大致上為梯形。 開口 501a係朝向發光二極體晶片4並可略大於基板3 ; 頂面501b與開口 501a相對,且其直徑小於開口 5〇1& ; 斜面501c係連接頂面5〇lb與開口 5〇la,且與平行於鏡 片光轴Z的軸線間具有一夾角i (未繪示於圖中)。由 於光折射部501内的折射率小於具有反曲點的光學鏡片$ 的折射率,因此增設光折射部5〇1可增加光束盘平行於 光軸Z的轴線間的偏折角,有利於降低近軸區的光強度 並增加光發散角(emission angle)。另外,頂面5〇lb可為 平:L·面或面向發光一極體晶片4的球面凹面,當頂面 為平坦面時,光折射部5〇1沿光軸之剖面為梯形。當頂 面501b為球面凹面時,相較於平坦面可使出射於凹^面 15 M424460 的頂面501b的光束的偏折角增加,可降低發光裝置2於 光轴Z處的》^度。 斜面501c與平行於光軸Z的軸線之夾角1與光束的 偏折角有關,由於過大的夾角es會減少光線通過斜面 501c的折射角度而降低光發散角,因此於較佳的實施例 中,光折射部501需滿足式(3),以利於較大光發散角的 形成。與先前技術中的抛物線凹穴及鐘型凹穴相比,當 來自發光二極體晶片4的光束與光軸z的夾角小於45度 時,出射自斜面501c的光束的偏折角較大;當來自發光 一極體晶片4的光束與光軸z的夾角接近9〇度時,出射 自斜面501c的光束的偏折角較小。藉此,有助於減弱發 光裝置2之近轴區的光強度,並提高離軸區與近軸區光 強度的比值。此外,本創作的光折射部5〇1的加工過程 也較簡單。 另外,請參閱第4圖,為利於光入射面5〇的光折射 邛501之製造及避免光線在頂面5〇lb與斜面交接 處產生發散現象,可於頂面5〇lb與斜面5〇lc交接處設 有倒角5〇ld。再者,為使光線有最大利用率,可於斜面 501'鄰接開口 501a處設有微結構5〇ie,微結構5〇ie 可為菲涅爾結構、鋸齒結構或不規則表面,不為所限。 微結構的長度通常小於或等於四分之一的斜面5〇ic長 度,或者,於較佳的實施例中’自微結構5〇le的上端 至發光二極體晶片4的發光面中心、的連線與光軸z的夹 角係大於L75 sin-| ,而此夾角的大小係依據微結構5 〇 i e 欲達成的目的而依據工藝來調整。 M424460 請參閱第3圖’具有反曲點的光學鏡片5的光出射 面51為對稱於光軸z的非球面於本創作的各實施例 中 係採用如下的非球面方程式(asperical surface formula)來表示非球面的形狀: z(h) =____c^2 1 + λ[^-〇- + K)c2h2) + Aih +乂〆+#6+^8 。...(式 8) 其中’ Z(h)為鏡片之光學面上任一點以光軸方向至 鏡片中心點切平面的距離(SAG值),c是非球面頂點的 曲率,h為鏡片之光學面上任一點沿垂直光軸的方向至 光軸的距離’ K為圓錐係數(c〇njc c〇nstant)、a2、A4、 A6、A8、a1g分別二、四、六、八、十階的非球面修正 係數(Nth Order Aspherical Coefficient)。需注意的是, 這裡所列的非球面方程式僅為非球面形狀表現的一種 方式任何可表示軸對稱的非球面方程式應當皆可利用 以製作出本創作之具有反曲點的光學鏡片5,而不應當 為此所限。 光出射面51包含設置於中央的凹陷部51〇及連 於凹陷部51G外圍的凸出部511。於其中—實施例中, 光出射Φ 51可更包括一垂直部512,該垂直部係大 致上與光軸z平行,並連接於凸出部511外圍,其有助 2低雜光現象。其中,凹陷部510與凸出部511間且 IV而凸出部511的表面具有至少—反曲點以產 生特疋光型,而為了構成一近軸區 :中央暗區的光通量比值滿足式⑹的環狀光型= 的设置需滿足式⑴的條件。於較佳的實施例中,如第2 17 M424460 圖所示,凸出部511的表面具有第一反曲點&及第二反 曲點Ρπ,且第一反曲點Pi的設置需滿足式(4);而第二 反曲點Ρπ的設置需滿足式(5)。其中,第一反曲點&發 生於切線斜率自負到正(或自正到負)處;第二反曲點匕 發生於切線斜率自正到負(或自負到正)處。第一反曲點1 Pi的設計係可使其附近區域產生全反射效果,藉此降低 第一反曲點Pi附近的光通量並增加光發散角;而第二反 曲點Ρπ的設計係可使較多的光束於第二反曲點h外圍 的凸出部511射出’藉此提高離軸區的光強度。此外, 當欲得到較細的環狀光型時,可降低第一反曲點p丨與第 弁二間的角度差;當欲提高光發散角同時使環狀 止較粗時,可提高各反曲點至發光二極體晶片4的發 —面中心的連線與絲z間的爽角, =上此’使得具有特定光型的具有反曲= 予鏡片及其發光裝置更容易製作。 凹陷部510可為自凸出部511内緣,亦即接點p 點的朝光人^面5G的方向下凹並於光軸Z上形成一頂 光入Π:第亦5圖所示)’且該凹陷部510的凹面面向 射面50。亦即,於四p夕邱 丁gEt如s n , 尽凹陷。(5 510中,自凹陷部51〇 方向:鏡JT511的内緣,其凹陷部510表面以光軸 型的高亮度區與中央暗區的光通 2 地小於等於35且大於等於8 =進步 陷部510可為自接敕p “ 第3圖所不’凹 並於鏡片近2 射面50的方向下凹, 轴處具有—水平截平面㈣的結構。藉此, M424460 使得I狀光型的南免度區與中央暗區的光通量比值進 y步地小於等於8 ^大於等於3。由於本創作揭露了不 ,態樣的光出射面51的凹陷部51〇,因此使用者可以依 八對於光型的要求而選擇凹陷冑510的結構,使得本創 作的具有反曲點的光學鏡片及其發光裝置應用性更廣 泛。 於較佳的實施例中,光出射面51具有全反射區, 八分布於反曲點之外圍或/及凹陷部51〇,該全反射區的 ,一點之表面斜率使得入射至凹陷部51〇的光束的入射 角大於等於arcsin(1/Nd),藉此’使光束無法自反曲點之 外圍的部份區域或/及凹陷部51()射出,以降低近轴區的 光強度或擴大環狀光型的内徑。如此—來,當全反射區 的表面積愈大時,錢光通量較弱的ii圍擴a,同時使 光分佈範圍更廣並增加環型區域的光通量。 此外’於較佳的實施例中,為了使得近軸區的光強 :進-步地降低’並有助於提高發光二極體晶片4的發 光面中心至環狀光型的光強度峰值的連線與光轴z的央 =M(未繪示於圖中),具有反曲點的光學鏡片5需滿 足式(2)以限定光折射部5〇1的頂面至光出射面51 的凹陷部510的距離與鏡片上最厚仏(切示於圖中) 的關係。其中’所述的鏡片上最厚值W的是自具有反 曲點的光學鏡片5的光出射面51任一點沿光軸z方向 至光入射面50之距離的最大值。 為說明根據本創作的主要技術特徵所衍生的各實 M424460 施例’以下將列出共9種態樣的呈右只从 。你幻昇有反曲點的光學鏡 片,然而本創作的具有反曲點的光學鏡片的尺寸、各項 係數及各組成的數據皆應不為所限。另外,於各實施例 中所採用的發光二極體晶片及基板的條件皆相同。、 <第一實施例> 請參考第5圖至第8圖,其分別為本創作之發光裝 置的第一實施例示意圖及其光路圖、極座標光強^分佈 圖(polar candela distribution plot)與矩形座標配光曲線 圖(rectangular candela distribution plot)。 於此實施例中,除下列說明部份外,其餘部份均盥 前述類似,故相同的結構係以相同的元件符號表示,於 此不再贅述。 、 下列表(一)為本例中具有反曲點的光學鏡片5的 光出射面51於式(8)中的各項係數:A light incident surface 50 and a light exit surface 51 are included. A light refracting portion 501 symmetrical to the optical axis Z is disposed at a center of the light incident surface 50 for receiving a light beam from the light emitting diode wafer 4, which is disposed on the light emitting surface of the light emitting diode wafer 4, and A gap is created with the LED chip 4. The light incident surface 5〇 may further include a flat surface 502' which extends from the opening end of the light refraction portion 5〇1 and is in contact with the light exit surface 51. In a preferred embodiment, the flat surface 502 of the light incident surface 50 may be plated with a reflective layer or a material that reflects light to increase the light utilization efficiency of the light-emitting device 2. In a preferred embodiment, the LED wafer 4 is not housed in the photorefractive portion 5〇1, that is, the horizontal surface of the opening 501a is located on or just above the light emitting surface of the LED array 4. The stack, which is located at its upper edge, is more conducive to heat dissipation. The light refraction portion 501 has an opening 5?la, a top surface 501b, and a slope 501c' which are substantially trapezoidal in cross section along the optical axis 2. The opening 501a is directed toward the LED array 4 and may be slightly larger than the substrate 3; the top surface 501b is opposite to the opening 501a, and has a diameter smaller than the opening 5〇1&; the slope 501c is connected to the top surface 5〇1b and the opening 5〇la, And there is an angle i (not shown in the figure) between the axes parallel to the optical axis Z of the lens. Since the refractive index in the light refraction portion 501 is smaller than the refractive index of the optical lens $ having the inflection point, the addition of the light refraction portion 5〇1 can increase the deflection angle between the axes of the beam plate parallel to the optical axis Z, which is advantageous for reducing The light intensity of the paraxial region increases the light emission angle. Further, the top surface 5?lb may be a flat surface: an L-plane or a spherical concave surface facing the light-emitting one-pole wafer 4. When the top surface is a flat surface, the light-refractive portion 5?1 has a trapezoidal shape along the optical axis. When the top surface 501b is a spherical concave surface, the deflection angle of the light beam which is emitted from the top surface 501b of the concave surface 15 M424460 is increased as compared with the flat surface, and the degree of the light-emitting device 2 at the optical axis Z can be lowered. The angle 1 between the inclined surface 501c and the axis parallel to the optical axis Z is related to the deflection angle of the light beam. Since the excessive angle es reduces the angle of refraction of the light passing through the inclined surface 501c to reduce the light divergence angle, in a preferred embodiment, the light The refracting portion 501 needs to satisfy the formula (3) to facilitate the formation of a large light divergence angle. Compared with the parabolic recess and the bell pocket in the prior art, when the angle between the light beam from the LED chip 4 and the optical axis z is less than 45 degrees, the deflection angle of the light beam emerging from the inclined surface 501c is larger; When the angle between the light beam from the light-emitting monopole wafer 4 and the optical axis z is close to 9 〇, the deflection angle of the light beam emerging from the inclined surface 501c is small. Thereby, it is possible to reduce the light intensity of the paraxial region of the light-emitting device 2 and to increase the ratio of the light intensity between the off-axis region and the paraxial region. In addition, the processing of the photorefractive portion 5〇1 of the present invention is also relatively simple. In addition, please refer to FIG. 4, which is to facilitate the manufacture of the light refraction 邛501 for the light incident surface 5〇 and to avoid divergence of light at the intersection of the top surface 5〇1b and the inclined surface, and can be on the top surface 5〇lb and the inclined surface 5〇 The lc junction has a chamfer 5〇ld. Furthermore, in order to maximize the utilization of light, a microstructure 5 〇ie may be provided adjacent to the opening 501a at the inclined surface 501', and the microstructure 5 〇ie may be a Fresnel structure, a sawtooth structure or an irregular surface. limit. The length of the microstructure is typically less than or equal to a quarter of the slope 5 〇ic length, or, in the preferred embodiment, 'from the upper end of the microstructure 5 〇le to the center of the light-emitting surface of the LED array 4 The angle between the connection and the optical axis z is greater than L75 sin-|, and the angle is adjusted according to the process according to the purpose of the microstructure 5 〇ie. M424460 Please refer to Fig. 3 'The optical exit surface 51 of the optical lens 5 having the inflection point is an aspheric surface symmetrical to the optical axis z. In the embodiments of the present invention, the following aperical surface formula is used. Indicates the shape of the aspheric surface: z(h) =____c^2 1 + λ[^-〇- + K)c2h2) + Aih +乂〆+#6+^8 . (Formula 8) where 'Z(h) is the distance (SAG value) from the optical axis direction to the plane of the lens center point at any point on the optical surface of the lens, c is the curvature of the aspherical vertex, and h is the optical surface of the lens The distance from the direction of the vertical optical axis to the optical axis at any point 'K is a conical coefficient (c〇njc c〇nstant), a2, A4, A6, A8, a1g are aspherical surfaces of two, four, six, eight, tenth order respectively Nth Order Aspherical Coefficient. It should be noted that the aspheric equations listed here are only one way of aspherical shape representation. Any aspherical equation that can represent axisymometry should be available to make the optical lens 5 with the inflection point of the present creation. This should not be limited to this. The light exit surface 51 includes a recess portion 51 provided at the center and a projection portion 511 connected to the periphery of the recess portion 51G. In the embodiment, the light exiting Φ 51 may further include a vertical portion 512 which is substantially parallel to the optical axis z and is connected to the periphery of the convex portion 511, which contributes to low stray light. Wherein, the surface of the recessed portion 510 and the protruding portion 511 and IV and the surface of the protruding portion 511 have at least an inflection point to generate a special light-emitting type, and in order to form a paraxial region: the luminous flux ratio of the central dark region satisfies the formula (6) The setting of the ring type = should satisfy the condition of equation (1). In a preferred embodiment, as shown in the second 17 M 424 460, the surface of the protrusion 511 has a first inflection point & and a second inflection point Ρπ, and the setting of the first inflection point Pi is satisfied. Equation (4); and the setting of the second inflection point Ρπ needs to satisfy Equation (5). Among them, the first inflection point & occurs from the tangent slope from negative to positive (or from positive to negative); the second inflection point 匕 occurs at the tangent slope from positive to negative (or conceited to positive). The design of the first inflection point 1 Pi can produce a total reflection effect in the vicinity thereof, thereby reducing the luminous flux near the first inflection point Pi and increasing the light divergence angle; and the design of the second inflection point Ρπ can More of the light beam exits the projection 511 at the periphery of the second inflection point h, thereby increasing the light intensity of the off-axis region. In addition, when a thin annular light pattern is to be obtained, the angular difference between the first inflection point p丨 and the second one can be reduced; when the light divergence angle is to be increased and the ring is relatively thick, the each can be improved. The recurve point to the line between the center of the face of the light-emitting diode wafer 4 and the refresh angle between the wires z, which makes it easier to fabricate the lens having the specific light type and the light-emitting device and its light-emitting device. The recessed portion 510 may be recessed from the inner edge of the protruding portion 511, that is, in the direction of the light point 5G of the contact point p and form a top light entrance on the optical axis Z: FIG. And the concave surface of the depressed portion 510 faces the emitting surface 50. That is to say, in the four p eve Qiu Ding gEt such as s n, do the depression. (5 510, from the recessed portion 51〇 direction: the inner edge of the mirror JT511, the surface of the recessed portion 510 has a light-axis type high-luminance region and a central dark region light-pass 2 is less than or equal to 35 and greater than or equal to 8 = progressive trap The portion 510 can be a recessed structure of the 敕p “not shown in Fig. 3 and recessed in the direction of the lens near the second emitting surface 50, and the shaft has a horizontal truncated plane (four). Thereby, the M424460 makes the I-shaped light type The ratio of the luminous flux of the south-free zone to the central dark zone is less than or equal to 8 ^ greater than or equal to 3. Since the present disclosure discloses the concave portion 51 of the light exit surface 51 of the aspect, the user can The structure of the recessed 胄510 is selected according to the requirements of the light type, so that the optical lens with the inflection point of the present invention and the illuminating device thereof are more widely applicable. In a preferred embodiment, the light exiting surface 51 has a total reflection area, eight Distributed on the periphery of the inflection point or/and the depressed portion 51A, the slope of the surface of the total reflection region is such that the incident angle of the light beam incident on the depressed portion 51〇 is greater than or equal to arcsin (1/Nd), thereby The beam cannot be partially from the periphery of the inflection point or/and the depression 51() is injected to reduce the light intensity of the paraxial region or to enlarge the inner diameter of the annular light pattern. Thus, when the surface area of the total reflection region is larger, the light flux is weaker, and the light is expanded to a, while making the light The distribution range is wider and the luminous flux of the toroidal region is increased. Further, in the preferred embodiment, in order to make the intensity of the paraxial region: step-down, and to improve the illumination of the LED wafer 4 The line connecting the peak of the light intensity to the ring-shaped light type and the central axis of the optical axis z=(not shown in the figure), the optical lens 5 having the inflection point needs to satisfy the formula (2) to define the light refraction part. The distance from the top surface of the 5 〇 1 to the recess 510 of the light exit surface 51 is the relationship with the thickest ridge (shown in the figure) on the lens. The 'the thickest value on the lens is the self-recursion The maximum value of the distance from any point of the light exit surface 51 of the optical lens 5 of the point along the optical axis z direction to the light incident surface 50. To illustrate the actual M424460 examples derived from the main technical features of the present creation, 'the following will be listed A total of 9 kinds of patterns are only from the right. You have an optical lens with a recurve point, but this creation has The size, various coefficients, and data of each component of the optical lens of the inflection point are not limited. In addition, the conditions of the LED and the substrate used in the respective embodiments are the same. [Embodiment] Please refer to FIG. 5 to FIG. 8 , which are respectively a schematic view of a first embodiment of the light-emitting device of the present invention, and an optical path diagram, a polar candela distribution plot and a rectangular coordinate In this embodiment, except for the following description, the rest of the components are similar to the foregoing, and the same structures are denoted by the same reference numerals and will not be described again. The following table (1) is the coefficient of the light exit surface 51 of the optical lens 5 having the inflection point in the equation (8):

本實施例中’具有反曲點的光學鏡片5係由折射率 (Nd)為1.49的聚曱基丙烯酸曱酯(pmma)材質所製成, 其θτ為47.845。。具有反曲點的光學鏡片5的直徑為14 mm ’光出射面51的凹陷部510係自凸出部5 11的内緣 朝光入射面50的方向下凹並於光軸上形成一頂點的凹 面。上述頂點沿鏡片光軸Z至光入射面50所處的水平 面的距離為3 mm,鏡片上最厚值Lt為3.912 mm,光折 iV!4Z4460 射部501的頂面5Glb為與光轴2垂直的平坦面,且頂 面501b、開口 501a的直徑分別為i mm及3 5 mm ;而 光折射5〇 1…光軸Z剖面的高為2 mm。光折射部5〇】 的頂面501b與光軸Z的交點至光出射面51之凹陷部 wo的表面與光軸z的交點之距離(Di)為工,符合式 (2)。第一反曲點Pi至發光二極體晶片4的發光面中心 的連線與光軸z間的夾角(θη)為52 2。,符合式;第 反曲點Pii至發光二極體晶片4的發光面中心的連線 •與光軸Z間的夾角(0i2)為60.3。,符合式(5)。 、由第6圖至第8圖可知,來自發光二極體晶片々的 光束入射至光折射部5〇1後會朝向垂直於光軸z的方向 偏折;來自發光二極體晶片4的光束經由光折射部5〇1 並入射至光出射面51之凹陷部51〇的部份區域以及入 射至光出射面51之凸出部511的第一反曲點匕附近 時會發生全反射的現象,且大部分的光束於第二反曲 點Pii外圍的凸出部511射出,藉此提高離軸區的光強 鲁度如此-來,可構成一近轴區亮度較低的環狀光型。 為,於光折射部501之製造及避免光線產生發散現 象,本實施例可於頂面5〇lb與斜面5〇lc交接處設有倒 角501d(如第4圖所示)。又,為使光線有最大利用率, 本實施例可於斜面5〇lc鄰接開口 5〇u處設有微結構 5〇^(如第4圖所示),微結構50^可為菲涅爾結構、鋸 齒結構或不規則表面,係可依據不同的光學效果而擇一 或使用其組合而設置。本實施例係使用發光二極體晶片 的發光面中心至微結構5〇le的上端連線與光軸z的夾 21 M424460 角為75.12°之不規則表面(俗稱為咬花)。以下的各個實 施例,係可依其目的採用適當的倒角5〇ld與微結構 501e,故於之後的各個實施例則不再贅述。 來自發光二極體晶片4的光束經由具有反曲點的光 學鏡片5出射後,所形成的環狀光型的最大有效發散角 為164°、環狀光型的有效發散角寬度為28。。其中,有 效發散角定義為具有最大光通量的半值的臨界角;有效 發散角見度定意為具有最大光通量的半值的最大臨界 角減去其最小臨界角。發光二極體晶片4之發光面中心 至該環狀光型的光強度峰值的連線與該光軸z間的夾角 (ΘΜ)為72°、中央暗區的邊界上任一點至發光二極體晶 片4之發光面中心的連線與光軸2間的夾角(2/3*0丁, 以下將簡稱為中央暗區的邊界角度)為3 19。、環狀光型 的高亮度區的内圈邊界上任一點至發光二極體晶片4之 發光面中心的連線與光軸2間的夾角(01^減1/3*卜,以 下將簡稱為高亮度區的内圈邊界角度)為56〇5。;環狀光 !的冋冗度區的外圈邊界上任一點至發光二極體晶片4 之發光面中心的連線與光軸ζ間的夾角(ΘμΜ ι/3*θτ, 以下將簡稱為高亮度區的外圈邊界角度)為87 95。。於本 實施例中,式(3)及(7)的計算結果如下: (Μ1θΊάθ tan(0s) = 0.625 = 15.13 fTId9 因此,本實施例的具有反曲點的光學鏡片5的光折 22 M424460 射部501符合式(3) ’而發光裝置2所形成的環狀光型 符合式(6)及(9)。另外,由矩形座標配光曲線圖可知, 當光發散角小於40。時,各角度的發光強度約1燭光(cd) 左右’亦即發光裝置2的近軸區亮度相當地低,藉此, 可增加最大有效發散角,並形成高亮度區的光通量大於 中央暗區的光通量約15倍的環狀光型,以達成高均光 與高散光性的需求並降低色差。 &lt;第二實施例&gt; 請參考第9圖至第12圖,其分別為本創作之發光 裝置的第二實施例示意圖及其光路圖、極座標光強度分 佈圖與矩形座標配光曲線圖。 於此實施例中,除下列說明部份外,其餘部份均岁 前述類似’於此不再贅述。 ^ 下列表(二)為第二實施例中具有反曲點的光學鏡 片5的光出射面51於式(8)中的各項係數: 川二)、本實施食出射面之非球面係數 曲率+徑(R)曲率(c) κ 又 —----- &quot;ToiE-Qg^.seE-fOS -5.3462 ^α〇27〇Γ&quot;·〇.〇〇397 2.46Ε-05 3.37Ε-06 -5.75Ε-08 本實施例中,具有反曲點的光學鏡片5的各_ u —實施例相似’㈣,Lt為3912mm、光折射名 =各項條件相同’符合式(3)、第一與第二反曲㈣ 1心一實施例相同’而分別符合式⑷及(5)。惟 :有反曲點的光學鏡片5的光出射面Η之凹陷部Η 的近轴處進'一步句拓. /匕栝了一垂直於光軸Z的截平召 23 M424460 510a,其中,截平面510a沿光軸z至光入射面50所處 的水平面的距離為3.5 mm。如此一來,本實施例的仏 為1.5 mm,符合式(2)。 來自發光二極體晶片4的光束經由具有反曲點的光 學鏡片5出射後’所形成的環狀光型的最大有效發散角 為164°、環狀光型的有效發散角寬度為28。、ΘΜ為72。、 環狀光型所環繞的中央暗區的邊界角度為31.9。、環狀 光型的高亮度區的内圈邊界角度為56.05。;環狀光型的 向亮度區的外圈邊界角度為87.95。。於本實施例中,式 (7)的計算結果如下:The optical lens 5 having the inflection point in the present embodiment is made of a poly(ryryl yttrium acrylate) material having a refractive index (Nd) of 1.49, and has a θτ of 47.845. . The optical lens 5 having the inflection point has a diameter of 14 mm. The recess 510 of the light exit surface 51 is recessed from the inner edge of the projection 5 11 toward the light incident surface 50 and forms a vertex on the optical axis. Concave. The distance from the apex of the lens along the optical axis Z of the lens to the horizontal plane where the light incident surface 50 is located is 3 mm, and the maximum thickness Lt of the lens is 3.912 mm. The top surface 5Glb of the photo-revolution iV!4Z4460 is 750 perpendicular to the optical axis 2 The flat surface, and the diameters of the top surface 501b and the opening 501a are i mm and 35 mm, respectively; and the light refraction 5 〇 1...the height of the optical axis Z profile is 2 mm. The distance (Di) between the intersection of the top surface 501b of the light-refracting portion 5'' and the optical axis Z to the intersection of the surface of the depressed portion wo of the light-emitting surface 51 and the optical axis z is in accordance with the formula (2). The angle (θη) between the line connecting the first inflection point Pi to the center of the light-emitting surface of the light-emitting diode wafer 4 and the optical axis z is 52 2 . Alignment; the line connecting the inflection point Pii to the center of the light-emitting surface of the light-emitting diode wafer 4 • The angle (0i2) with the optical axis Z is 60.3. , in accordance with formula (5). It can be seen from FIGS. 6 to 8 that the light beam from the light-emitting diode wafer is deflected toward the direction perpendicular to the optical axis z after being incident on the light-refractive portion 5〇1; the light beam from the light-emitting diode wafer 4 The total reflection occurs when a partial region of the concave portion 51A of the light exiting surface 51 is incident through the light refracting portion 5〇1 and is incident near the first inversion point 511 of the convex portion 511 of the light exit surface 51. And most of the light beam is emitted from the convex portion 511 at the periphery of the second inflection point Pii, thereby increasing the light intensity of the off-axis area. Thus, a ring-shaped light type having a low brightness in the paraxial region can be formed. . In order to manufacture the light refracting portion 501 and to avoid divergence of light, the embodiment may be provided with a chamfer 501d (as shown in Fig. 4) at the intersection of the top surface 5〇1b and the inclined surface 5〇lc. Moreover, in order to maximize the utilization of the light, the embodiment may be provided with a microstructure 5〇^ at the adjacent opening 5〇u of the inclined surface 5〇lc (as shown in FIG. 4), and the microstructure 50^ may be Fresnel. The structure, the sawtooth structure or the irregular surface can be set according to different optical effects or a combination thereof. In this embodiment, an irregular surface (commonly known as a bite flower) having an angle of 75.12° at the upper end of the light-emitting surface of the light-emitting diode wafer to the upper end of the microstructure 5〇le and the optical axis z is used. In the following embodiments, an appropriate chamfer 5 ld and a microstructure 501 e may be used according to the purpose, and thus will not be described again in the following embodiments. After the light beam from the light-emitting diode wafer 4 is emitted through the optical lens 5 having the inflection point, the annular effective light pattern has a maximum effective divergence angle of 164° and an annular light-type effective divergence angle width of 28. . Among them, the effective divergence angle is defined as the critical angle with the half value of the maximum luminous flux; the effective divergence angle is defined as the maximum critical angle of the half value with the largest luminous flux minus its minimum critical angle. The angle between the line connecting the center of the light-emitting surface of the light-emitting diode wafer 4 to the peak of the light intensity of the annular light pattern and the optical axis z is 72°, and any point on the boundary of the central dark region to the light-emitting diode The angle between the line connecting the center of the light-emitting surface of the wafer 4 and the optical axis 2 (2/3*0, which will hereinafter be simply referred to as the boundary angle of the central dark area) is 3 19 . The angle between the line connecting the center of the light-emitting surface of the light-emitting diode wafer 4 at any point on the inner ring boundary of the high-brightness region of the annular light type and the optical axis 2 (01^ minus 1/3*b, hereinafter referred to as The inner ring boundary angle of the high-luminance region is 56〇5. The angle between the line connecting the center of the light-emitting surface of the light-emitting diode wafer 4 at any point on the outer ring boundary of the ring-shaped light region to the optical axis (ΘμΜ ι/3*θτ, hereinafter referred to as high The outer ring boundary angle of the luminance zone is 87 95. . In the present embodiment, the calculation results of the equations (3) and (7) are as follows: (Μ1θΊάθ tan(0s) = 0.625 = 15.13 fTId9 Therefore, the optical lens of the embodiment having the inflection point 5 is folded 22 M424460 The portion 501 conforms to the formula (3)' and the annular light pattern formed by the light-emitting device 2 conforms to the equations (6) and (9). Further, it can be seen from the rectangular coordinate light distribution graph that when the light divergence angle is less than 40, each The luminous intensity of the angle is about 1 candle (cd) or so 'that is, the brightness of the paraxial region of the light-emitting device 2 is relatively low, whereby the maximum effective divergence angle can be increased, and the luminous flux of the high-luminance region is formed to be larger than the luminous flux of the central dark region. 15 times of annular light type to achieve high uniformity and high astigmatism and reduce chromatic aberration. <Second embodiment> Please refer to Fig. 9 to Fig. 12, which are respectively the second light-emitting device of the present invention. A schematic diagram of an embodiment, an optical path diagram, a polar coordinate light intensity distribution map, and a rectangular coordinate light distribution curve diagram. In this embodiment, except for the following descriptions, the rest of the sections are similar to the foregoing, and are not described herein again. List (2) is the second embodiment The coefficient of the light exit surface 51 of the optical lens 5 of the inflection point in the formula (8): Chuan 2), the aspheric coefficient curvature of the food exit surface + the curvature of the radius (R) (c) κ and ---- &quot;ToiE-Qg^.seE-fOS -5.3462 ^α〇27〇Γ&quot;·〇.〇〇397 2.46Ε-05 3.37Ε-06 -5.75Ε-08 In this embodiment, there is a recurve Each of the optical lenses 5 of the point is similar to '(4), Lt is 3912 mm, the light refraction name = the same condition 'conformity (3), the first and second recursions (four) 1 core one embodiment is the same ' And respectively conform to equations (4) and (5). However, the near-axis of the concave portion of the light exit surface of the optical lens 5 having the inflection point is in a step-by-step extension. / A truncated 23 M424460 510a perpendicular to the optical axis Z, wherein The distance of the plane 510a along the optical axis z to the horizontal plane at which the light incident surface 50 is located is 3.5 mm. As a result, the 仏 of the present embodiment is 1.5 mm, which conforms to the formula (2). The maximum effective divergence angle of the annular light pattern formed by the light beam from the light-emitting diode wafer 4 after exiting through the optical lens 5 having the inflection point is 164°, and the effective divergence angle width of the annular light pattern is 28. ΘΜ is 72. The boundary angle of the central dark area surrounded by the annular light pattern is 31.9. The inner ring boundary angle of the high-luminance region of the ring-shaped light type is 56.05. The angle of the outer ring boundary of the annular light pattern to the luminance region is 87.95. . In the present embodiment, the calculation result of the equation (7) is as follows:

因此’發光裝置2所形成的環狀光型符合式(6)及 (10)。另外’由矩形座標配光曲線圖可知,當光發散角 小於40°時’各角度的發光強度大於第一實施例相同範 圍的發光強度’但仍小於最大光通量的半值,故依舊具 有避免發光裝置2形成中央亮點的效果,並形成高亮度 區的光通量大於中央暗區的光通量約4倍的環狀光型, 以達成高均光與高散光性的需求並降低色差。藉此,使 用者可依其對於環狀光型的需求選擇不同態樣的具有 反曲點的光學鏡片5。 另外’由於第一實施例的光路走向說明可適用於本 實施例的光路走向,因此關於本實施例的第1 〇圖的說 24 M424460 明請參照第一實施例的第6圖的說明,於此便不再贅述 &lt;第三實施例&gt; 請參考第13圖至第16圖,其分別為本創作之發光 装置的第三實施例示意圖及其光路圖、極^ 佈圖與矩形座標配光曲線圖。 強度刀 义於此實施例中,&amp;下列說明部份外,魏部份均與 前述類似,於此不再贅述。 下列表(三)為第三實施例中具有反曲點的光學鏡 片5的光出射面51於式(8)中的各項係數: (二)、本實施例光出射面之非球面係數 曲率半徑(R)曲率(c) ; ' -- ㈣ 9施+Q8 本實施例中,具有反曲點的光學鏡片5的各項條件 皆與第一實施例相似,亦即,^為3912mm、光折射部 5〇1的各項條件相同,符合式(3)、第一與第二反曲 位置與第一實施例相同,而分別符合式(4)及(5)。惟,' 具有反曲點的光學鏡片5的光出射面51之凹陷部51〇 的近軸處進一步包括了一垂直於鏡片光軸z的截平面 51〇a,其中,截平面51〇a沿鏡片光軸z至光入射面% 所處的水平面的距離為3.75 mm。如此一來,本實施例 的D!為1.75 mm,符合式(2)。 來自發光二極體晶片4的光束經由具有反曲點的光 學鏡片5出射後,所形成的環狀光型的最大有效發散角 25 M424460 為164。、環狀光型的有效發散角寬度為28。、^為72。 中央暗區的邊界角度為319。、環狀光型的高亮度區的 内圈邊界角度為56.05。,環狀光型的愚亮度區的外圈邊 界角度為87.95。。於本實施例中,式(7)的計算結果如下:Therefore, the annular light pattern formed by the light-emitting device 2 conforms to the equations (6) and (10). In addition, it can be seen from the rectangular coordinate light distribution curve that when the light divergence angle is less than 40°, the luminous intensity of each angle is greater than the luminous intensity of the same range of the first embodiment, but still less than the half value of the maximum luminous flux, so the illumination is still avoided. The device 2 forms the effect of a central bright spot and forms an annular light pattern having a luminous flux of a high luminance region that is greater than about 4 times the luminous flux of the central dark region, to achieve high uniformity and high astigmatism and to reduce chromatic aberration. Thereby, the user can select different types of optical lenses 5 having inflection points according to their requirements for the annular light type. In addition, since the description of the optical path of the first embodiment can be applied to the optical path of the present embodiment, the description of the first embodiment of the present embodiment, 24 M424460, please refer to the description of the sixth embodiment of the first embodiment. Therefore, the third embodiment will be described with reference to FIGS. 13 to 16 , which are respectively a schematic view of a third embodiment of the light-emitting device of the present invention, and an optical path diagram, a pole pattern, and a rectangular seat. Light curve. The strength of the tool in this embodiment is the same as the above description, and the Wei portion is similar to the foregoing, and will not be described again. The following table (3) is the coefficient of the light exit surface 51 of the optical lens 5 having the inflection point in the third embodiment in the formula (8): (2) The aspheric coefficient curvature of the light exit surface of the present embodiment Radius (R) curvature (c); '- (4) 9 applies +Q8 In this embodiment, the conditions of the optical lens 5 having the inflection point are similar to those of the first embodiment, that is, ^3912 mm, light The conditions of the refracting portion 5〇1 are the same, conforming to the formula (3), and the first and second recurve positions are the same as those of the first embodiment, and conform to the equations (4) and (5), respectively. However, the paraxial portion 51 of the light exit surface 51 of the optical lens 5 having the inflection point further includes a section plane 51〇a perpendicular to the optical axis z of the lens, wherein the section plane 51〇a along The distance from the optical axis z of the lens to the horizontal plane at which the light incident surface is located is 3.75 mm. As a result, the D! of the present embodiment is 1.75 mm, which conforms to the formula (2). After the light beam from the light-emitting diode wafer 4 is emitted through the optical lens 5 having the inflection point, the maximum effective divergence angle 25 M424460 of the formed annular light pattern is 164. The effective divergence angle of the annular light pattern is 28. , ^ is 72. The boundary angle of the central dark area is 319. The inner ring boundary angle of the high-brightness area of the ring-shaped light type is 56.05. The outer circle boundary angle of the ring-shaped brightness type of the ring-shaped light type is 87.95. . In the present embodiment, the calculation result of the formula (7) is as follows:

因此,發光裝置2所形成的環狀光型符合式及 (1〇)。另外,由矩形座標配光曲線圖可知,當光發散角 小於30°時’各角度的發光強度大^第二實施例相同範 圍的發光強度’但仍小於最大光通量的半值,故具有避 ^發光裝置2形成中央亮點的效果,並形成高亮度區的 光通量大於中央暗區的氺;S I Μ 1 Μ h _Therefore, the annular light pattern formed by the light-emitting device 2 conforms to the formula and (1). In addition, it can be seen from the rectangular coordinate light distribution graph that when the light divergence angle is less than 30°, the luminous intensity of each angle is large, and the luminous intensity of the same range of the second embodiment is still smaller than the half value of the maximum luminous flux, so that it has a avoidance The illuminating device 2 forms an effect of a central bright spot, and forms a high-luminance region with a luminous flux larger than that of the central dark region; SI Μ 1 Μ h _

26 M42446〇 請參考第17圖至第20圖,其分別為本創作之發光 裝置的第四實施例示意圖及其光路圖、極座標 佈圖與矩形座標配光曲線圖。 ™ 此於此實施例中,除下列說明部份外,其餘部份均與 前述類似,於此不再贅述。 、 下列表(四)為第四實施例中具有反曲點的光學鏡 片5的光出射面51於式(8)中的各項係數: 本實施例中,具有反曲點的光學鏡 二:施例相似’L,仍為3.9丨2_,光折射部= 符人:二、且第一與第二反曲點的位置相同,而分別 折:但具有反曲點的光學鏡片5的材料為 :Π二.5:的光學塑料,仏為48.528。,且光折射 凹面頂而頂面501b為面向發光二極體晶片4設置的 面’頂面501b的曲率半徑為1.3 mm,故D A 0 0 符合式(2)。 聰故〇,為〇.9mm, 由第18圖至第2〇圖可知,來自發二 曰 向的=至光折射部5〇1後會朝向垂直於:光二 面5〇lb為凹面目時較ζ第一一^例,當光折射部训的頂 發光二極興S寺可進一步地降低光軸處的亮度;來自 出射^ 5! ^凹折射部501並入射至光 面”之凸出的部份區域以及入射至光出射 的第反曲點Pi附近時,會發生全 27 M424460 反射的現象,且大部分的光束於在第二反曲點ΡΗ外圍 的凸出部511射出,藉此提高離轴區的光強度。如此一 來’可構成一近軸區亮度較低的環狀光型。 來自發光二極體晶片4的光束經由具有反曲點的光 學鏡片5出射後,所形成的環狀光型的最大有效發散角 為164°、環狀光型的有效發散角寬度為28。、Θμ為72。、 中央暗區的邊界角度為32.35。、環狀光型的高亮度區的 内圈邊界角度為55.82。;環狀光型的高亮度區的外圈邊 界角度為88.18。。於本實施例中,式(7)的計算結果如下:26 M42446〇 Please refer to Fig. 17 to Fig. 20, which are respectively a schematic view of a fourth embodiment of the illuminating device of the present invention, and an optical path diagram, a polar coordinate map and a rectangular coordinate light distribution graph. In this embodiment, except for the following description, the rest are similar to the foregoing, and will not be further described herein. The following table (4) is the coefficient of the light exit surface 51 of the optical lens 5 having the inflection point in the fourth embodiment in the formula (8): In this embodiment, the optical mirror 2 having the inflection point: The embodiment is similar to 'L, still 3.9丨2_, the light refraction part = the person: two, and the positions of the first and second inflection points are the same, and are respectively folded: but the material of the optical lens 5 having the inflection point is :Π二.5: The optical plastic, the 仏 is 48.528. The light refracts the concave top and the top surface 501b has a radius of curvature of the top surface 501b of the surface facing the light-emitting diode wafer 4 of 1.3 mm, so that D A 0 0 conforms to the formula (2). As for the 〇.9mm, it can be seen from Fig. 18 to Fig. 2 that the light from the second direction = to the light refracting part 5〇1 will be perpendicular to the light side: 5〇lb is the concave surface. In the first example, when the light-refractive part trains the top-emitting dipole, the temple can further reduce the brightness at the optical axis; from the exit ^ 5! ^ concave refraction part 501 and incident on the smooth side of the convex When a part of the area and the vicinity of the inflection point Pi emitted by the light are incident, a total of 27 M424460 reflection occurs, and most of the light beam is emitted from the convex portion 511 at the periphery of the second inflection point, thereby improving The light intensity of the off-axis region is such that it can form an annular light pattern having a low brightness in the paraxial region. The light beam from the light-emitting diode wafer 4 is emitted through the optical lens 5 having an inflection point, and is formed. The maximum effective divergence angle of the ring-shaped light type is 164°, the effective divergence angle width of the annular light type is 28, Θμ is 72. The boundary angle of the central dark area is 32.35, and the high-brightness area of the annular light type The inner ring boundary angle is 55.82. The outer ring boundary angle of the annular light type high brightness region is 88.18. Embodiment, the calculation result of formula (7) as follows:

因此,發光裝置2所形成的環狀光型符合式(6)及 (9)。另外’由第20圖的矩形座標配光曲線圖可知,相 較於第一實施例,當光折射部5〇1的頂面5〇11)為凹面 時可進一步地降低光軸處的亮度;當光發散角小於4〇。 時’各角度的發光強度均小於1燭光(cd),亦即發光裝 置2的近軸區的亮度相當地低,藉此可形成高亮度區的 光通量大於中央暗區的光通量約14倍的環狀光型,且 增加發光裝置2的最大有效發散角,以達成高均光與高 散光性的需求並降低色差。 另外’由於第一實施例的光路走向說明可適用於本 實施例的光路走向,因此關於本實施例的第1 8圖的說 明請參照第一實施例的第6圖的說明,於此便不再贅 述。 28 M424460 &lt;第五實施例&gt; 明參考第21圖至第24圖,其分別為本創作之發光 裝置的第五實施例示意圖及其光路圖、極座標光強度分 佈圖與矩形座標配光曲線圖。 _於此實施例中,除下列說明部份外,其餘部份均與 前述類似,於此不再贅述。 下列表(五)為第五實施例中具有反曲點的光學鏡 片5的光出射面51於式(8)中的各項係數: K五)、本實施例光出射面之非球面係數 半徑(R)曲率(c) κ I; X-^ 1^7 7.85E+06 -10,8558 -0.23631 本實施例中,具有反曲點的光學鏡片5係由折射率 (Nd)為1,51的光學塑料所製成,其“為48 528。。具有 反曲點的光學鏡片5的直控4 10.4 mm,光出射面51 的凹部510係為自凸出部5! i的内緣朝光入射面% 的方向下凹並於鏡片光軸上形成一頂點的凹面。上述頂 點沿光軸Z至光入射面50所處的水平面的距離為32 mm,鏡片上最厚值(Lt)為3 31 mm,光折射部Μ}的頂 面501b為與光軸z垂直的平坦面,且頂面5〇lb、開口 的直徑分別為〇.8 mm及3.5 mm ;而光折射部501 沿光軸z剖面的高為2 5mm。光折射部5〇1的頂面 與光軸z的交點至光出射面51之凹陷部51〇的表面與 光軸z的交點之距離(Di)為0 7mm,符合式(2)。反曲點 至發光二極體晶片4的發光面中心、的連線與光軸Z間的 夾角(θ〇為52.8。,符合式(1)。於本實施例中,光出射面 29 M424460 51的凸出部511上只有一個反曲點。 由第22圖至第24圖可知,於發光裴置2的近軸處, 來自發光二極體晶片4的光束經由光折射部5〇1朝垂直 於光軸z的方向偏折後,再入射至光出射面5ι之凹陷 部510進一步發生偏折,以降低近軸處的光強度。來自 發光二極體晶片4的光束經由光折射部5〇1並入射至光 出射面51之凸出部511的反曲點附近時會發生全反 射的現象,且大部分的光束於在反曲點外圍的凸出部 511射出,藉此提高離軸區的光強度。如此一來,可構 成一近轴區亮度較低的環狀光型。 來自發光二極體晶片4的光束經由具有反曲點的光 學鏡片5出射後,所形成的環狀光型的最大有效發散角 為154°、環狀光型的有效發散角寬度為23。、‘為66。、 環狀光型所環繞的中央暗區的邊界角度為32 35。、環狀 光型的尚凴度區的内圈邊界角度為49 82。;環狀光型的 高亮度區的外圈邊界角度為82」8〇&lt;&gt;於本實施例中,式 (3)及(7)的計算結果如下: tan(0s) = 0.54 ft— -= 11.89 Ιάθ 因此,本實施例的具有反曲點的光學鏡片5的光折 射部501符合式(3),而發光裝置2所形成的環狀光型 符合式(6)及(9)。另外,由矩形座標配光曲線圖可知, M424460 當光發散角小於30°時,各角度的發光強度均小於2濁 光(cd) ’亦即發光裝置2的近轴區亮度相當地低,而可 避免近軸區過亮而導致亮點的缺點。此外,藉由本實施 例所形成的環狀光型的高亮度區與所環繞的中央暗區 的光通量比值約為12而最大有效發散角為154。,可達 成面均光與高散光性的需求並降低色差。 &lt;第六實施例&gt; 請參考第25圖至第28圖,其分別為本創作之發光 魯裝置的第六實施例示意圖及其光路圖、極座標光強度分 佈圖與矩形座標配光曲線圖。 w 於此實施例中’除下列說明部份外,其餘部份均與 如述類似,於此不再資述。 下列表(六)為第六實施例中具有反曲點的光學鏡 片5的光出射面51於式(8)中的各項係數:Therefore, the annular light pattern formed by the light-emitting device 2 conforms to the equations (6) and (9). In addition, it can be seen from the rectangular coordinate light distribution graph of FIG. 20 that the brightness at the optical axis can be further reduced when the top surface 5 〇 11) of the light refracting portion 5 〇 1 is concave compared to the first embodiment; When the light divergence angle is less than 4 〇. When the luminous intensity of each angle is less than 1 candle (cd), that is, the brightness of the paraxial region of the light-emitting device 2 is relatively low, whereby the luminous flux of the high-luminance region can be formed to be larger than the luminous flux of the central dark region by about 14 times. The light type is increased, and the maximum effective divergence angle of the light-emitting device 2 is increased to achieve high uniformity and high astigmatism and to reduce chromatic aberration. In addition, since the description of the optical path of the first embodiment can be applied to the optical path of the present embodiment, the description of the eighth embodiment of the present embodiment will be referred to the description of the sixth embodiment of the first embodiment, and thus Let me repeat. 28 M424460 &lt;Fifth Embodiment&gt; Referring to Figs. 21 to 24, respectively, a schematic view of a fifth embodiment of the light-emitting device of the present invention, an optical path diagram, a polar coordinate light intensity distribution map, and a rectangular coordinate light distribution curve are shown. Figure. In this embodiment, except for the following description, the rest are similar to the foregoing, and will not be described again. The following table (5) is the coefficient of the light exit surface 51 of the optical lens 5 having the inflection point in the fifth embodiment in the formula (8): K5), the aspheric coefficient radius of the light exit surface of the present embodiment (R) Curvature (c) κ I; X-^ 1^7 7.85E+06 -10, 8558 - 0.23631 In this embodiment, the optical lens 5 having an inflection point is composed of a refractive index (Nd) of 1,51 Made of optical plastic, it is "48 528.. The direct control of the optical lens 5 with the inflection point is 4 10.4 mm, and the concave portion 510 of the light exit surface 51 is from the inner edge of the projection 5! i toward the light The direction of the incident surface % is concave and forms a concave surface on the optical axis of the lens. The distance between the apex along the optical axis Z to the horizontal plane of the light incident surface 50 is 32 mm, and the maximum thickness (Lt) on the lens is 3. The top surface 501b of the 31 mm, light refracting portion 为 is a flat surface perpendicular to the optical axis z, and the top surface 5 〇 lb, the diameter of the opening are 〇.8 mm and 3.5 mm, respectively; and the light refraction portion 501 along the optical axis The height of the z-section is 25 mm, and the distance (Di) between the intersection of the top surface of the light-refractive portion 5〇1 and the optical axis z to the intersection of the surface of the concave portion 51〇 of the light-emitting surface 51 and the optical axis z is 0 7 mm. Conforms to equation (2). The angle between the line connecting the center of the light-emitting surface of the light-emitting diode wafer 4 and the optical axis Z (θ 〇 is 52.8. According to the formula (1). In the present embodiment, the light exit surface 29 M424460 51 There is only one inflection point on the projection 511. As can be seen from Fig. 22 to Fig. 24, at the paraxial axis of the light-emitting device 2, the light beam from the light-emitting diode wafer 4 is perpendicular to the light-refractive portion 5〇1. After the direction of the optical axis z is deflected, the recessed portion 510 incident on the light exit surface 5i is further deflected to reduce the light intensity at the paraxial. The light beam from the light emitting diode wafer 4 passes through the light refraction portion 5〇1. When it is incident on the vicinity of the inflection point of the convex portion 511 of the light exit surface 51, total reflection occurs, and most of the light beam is emitted from the convex portion 511 at the periphery of the inflection point, thereby improving the off-axis area. In this way, an annular light pattern having a low brightness in the paraxial region can be formed. The light beam from the light-emitting diode wafer 4 is emitted through the optical lens 5 having an inflection point, and the annular light pattern is formed. The maximum effective divergence angle is 154°, and the effective divergence angle width of the annular light type is 23. 66. The boundary angle of the central dark area surrounded by the annular light type is 32 35. The inner circle boundary angle of the annular light type is 49 82. The annular light type has a high brightness area. The outer ring boundary angle is 82"8"&lt;&gt; In the present embodiment, the calculation results of the equations (3) and (7) are as follows: tan(0s) = 0.54 ft - -= 11.89 Ιά θ Therefore, the present embodiment The light refraction portion 501 of the optical lens 5 having the inflection point conforms to the formula (3), and the annular light pattern formed by the light-emitting device 2 conforms to the equations (6) and (9). In addition, it can be seen from the rectangular coordinate light distribution curve that when the light divergence angle is less than 30°, the luminous intensity of each angle is less than 2 turbid light (cd) 'that is, the brightness of the paraxial region of the light-emitting device 2 is relatively low, and It can avoid the disadvantage that the paraxial region is too bright and causes bright spots. Further, the luminous flux ratio of the annular light type high luminance region formed by the present embodiment and the surrounding central dark region is about 12 and the maximum effective divergence angle is 154. , to meet the needs of surface homogenization and high astigmatism and reduce chromatic aberration. &lt;Sixth Embodiment&gt; Please refer to Figs. 25 to 28, which are respectively a schematic view of a sixth embodiment of the luminous illuminating device of the present invention, and an optical path diagram, a polar coordinate light intensity distribution map, and a rectangular coordinate light distribution curve diagram. . w In this embodiment, except for the following descriptions, the rest are similar to those described above and will not be described here. The following table (6) is the coefficient of the light exit surface 51 of the optical lens 5 having the inflection point in the sixth embodiment in the formula (8):

本實施例中,具有反曲點的光學鏡片5係由折射率 (Nd)為1.53的光學塑料所製成’其θτ為49 187。。具有 反曲點的光學鏡片5的直徑為12 mm,光出射面//的 凹陷部510係為自凸出部511的内緣朝光入射面5〇的 方向下凹並於光軸Z上形成一頂點的凹面。上述頂點沿 光軸Z至光入射面50所處的水平面的距離為35爪爪, =為3.7 mm,光折射部501的頂面5〇lb為與光軸z垂 直的平坦面,且頂面501b、開口 5〇la的直徑分別為〇.8 31 M424460 爪111及3.5 111111;而光折射部501沿光軸2剖面的高為25 mm。光折射部501的頂面5〇lb與光軸z的交點至光出 射面5丨之凹陷部510的表面與光軸z的交點之距離(Di) 為1 mm,符合式(2)。反曲點至發光二極體晶片4的發 光面中心的連線與光軸z間的夾角(^為54。,符合式 (1)。於本實施例中,光出射面51的凸出部511上只有 一個反曲點。 由第26圖至第28圖可知,於發光裝置2的近軸處, 來自發光二極體晶片4的光束經由光折射部5〇1朝垂直 於光軸z的方向偏折後,再入射至光出射面51之凹陷 部510進-步發生偏折,以降低近軸處的光強度。來自 發光二極體晶片4的光束經由光折射部5〇1並入射至光 出射面5 1之凸出部5 11的反曲點附近時,會發生全反 射的現象,且大部分的光束於在反曲點外圍曰的凸出部 511射出,藉此提高離軸區的光強度。如此一來,可構 成一近軸區亮度較低的環狀光型。 來自發光二極體晶片4的光束經由具有反曲點 學鏡片5出射後’所形成的環狀光型的最大有效j 為150°、環狀光型的有效發散角寬度為3ι〇、θ 環狀光型所環繞的中央暗區的邊界角度為32 7M9。、产 光型的高亮度區的内圈邊界角度為4〇6。; 二 高亮度區的外圈邊界角度為73.4。。於本實施例 及(7)的計算結果如下: tan(0s) = 0.54 32 M424460In the present embodiment, the optical lens 5 having the inflection point is made of an optical plastic having a refractive index (Nd) of 1.53, which has a θτ of 49 187. . The optical lens 5 having the inflection point has a diameter of 12 mm, and the concave portion 510 of the light exit surface is recessed from the inner edge of the convex portion 511 toward the light incident surface 5〇 and formed on the optical axis Z. The concave surface of a vertex. The distance from the optical axis Z to the horizontal plane where the light incident surface 50 is located is 35 claws, = 3.7 mm, and the top surface 5 〇 lb of the light refraction portion 501 is a flat surface perpendicular to the optical axis z, and the top surface 501b, the diameter of the opening 5〇la is 〇.8 31 M424460 claws 111 and 3.5 111111, respectively; and the height of the light refraction part 501 along the optical axis 2 is 25 mm. The distance (Di) between the intersection of the top surface 5?lb of the light-refracting portion 501 and the optical axis z to the intersection of the surface of the concave portion 510 of the light-emitting surface 5 and the optical axis z is 1 mm, which is in accordance with the formula (2). The angle between the line of the inflection point and the center of the light-emitting surface of the light-emitting diode wafer 4 and the optical axis z (^ is 54., conforms to the formula (1). In the present embodiment, the convex portion of the light exit surface 51 There is only one inflection point on 511. As can be seen from Fig. 26 to Fig. 28, at the paraxial axis of the light-emitting device 2, the light beam from the light-emitting diode wafer 4 passes through the light-refracting portion 5〇1 toward the optical axis z. After the direction is deflected, the depressed portion 510 incident on the light exit surface 51 is further deflected to reduce the light intensity at the paraxial. The light beam from the light emitting diode wafer 4 is incident through the light refracting portion 5〇1. When it is near the inflection point of the convex portion 5 11 of the light exit surface 51, total reflection occurs, and most of the light beam is emitted from the convex portion 511 at the periphery of the inflection point, thereby improving the off-axis. The light intensity of the region can be such that a ring-shaped light having a low brightness in the paraxial region can be formed. The light beam from the light-emitting diode wafer 4 is emitted through the annular light having the inflection point lens 5 The maximum effective j of the type is 150°, and the effective divergence angle width of the annular light type is 3 〇, and the θ annular light type is surrounded by The boundary angle of the central dark area is 32 7M9. The inner ring boundary angle of the high-luminance area of the light-generating type is 4〇6; the outer ring boundary angle of the two high-brightness areas is 73.4. In this embodiment and (7) The calculation results are as follows: tan(0s) = 0.54 32 M424460

= 8.83= 8.83

因此’本實施例的具有反曲點的光學鏡片5的光折 ,部501符合式(3),而發光裝置2所形成的環狀光型 符合式(6)及(9)。另外,由矩形座標配光曲線圖可知, 當光發散角小於30。時,各角度的發光強度約1 5燭光 (cd)左右’亦即本創作的發光裝置2可避免近轴區過亮 而導致=點的缺點。此外’藉由本實施例所形成的環狀 光型的高亮度區與所環繞的中央暗區的光通量比值約 為9而最大有效發散角為15〇。,可達成高均光與高散 光性的需求並降低色差。 &lt;第七實施例&gt; 請參考第29圖至第32圖,其分別為本創作之發光 裝置的第七實施例示意圖及其光路圖、極座標光強度分 佈圖與矩形座標配光曲線圖。 於此實施例中,除下列說明部份外,其餘部份均與 前述類似,於此不再贅述。 下列表(七)為第七實施例中具有反曲點的光學鏡 片5的光出射面51於式(8)中的各項係數: (七)、本實施例光出射面之非球面係數 曲率⑼ κ I; : I--Γ 7.93E-14 Γ------ ~ AsTherefore, the optical folding of the optical lens 5 having the inflection point of the present embodiment, the portion 501 conforms to the formula (3), and the annular light pattern formed by the light-emitting device 2 conforms to the equations (6) and (9). In addition, it can be seen from the rectangular coordinate light distribution curve that the light divergence angle is less than 30. At this time, the luminous intensity of each angle is about 15 candles (cd) or so, that is, the light-emitting device 2 of the present invention can avoid the disadvantage that the paraxial region is too bright and causes the = point. Further, the luminous flux ratio of the annular light type high luminance region formed by the present embodiment and the surrounding central dark region is about 9 and the maximum effective divergence angle is 15 Å. , to achieve high uniformity and high astigmatism and reduce chromatic aberration. &lt;Seventh Embodiment&gt; Referring to Figs. 29 to 32, respectively, a schematic view of a seventh embodiment of the light-emitting device of the present invention, and an optical path diagram, a polar coordinate light intensity distribution map, and a rectangular coordinate light distribution curve are shown. In this embodiment, except for the following description, the rest are similar to the foregoing, and will not be further described herein. The following list (7) is the coefficient of the light exit surface 51 of the optical lens 5 having the inflection point in the seventh embodiment in the formula (8): (7) The aspheric coefficient curvature of the light exit surface of the present embodiment (9) κ I; : I--Γ 7.93E-14 Γ------ ~ As

本實施例中,具有反曲點的光學鏡片5係由折射率 (Nd)為1.53的光學塑料所製成,其、為49 187。。具有 33 M42446〇 反曲點的光學鏡片5的直徑為14 mm,光出射面5ι 凹陷部51〇係自凸出部511的内緣朝光入射面5〇的方 向下凹,並於鏡片光軸Z上形成—頂點的凹面。上述頂 點沿光軸Z至光入射面50所處的水平面的距離為3 爪瓜’^為4.077 mm,光折射部5〇1的頂面5〇ib為盥光 軸z垂直的平坦面,且頂面501b、開口 5〇ia的直^分 別為〇.8 1«111及3.5 11^;而光折射部5〇1沿光軸2剖= 的向為2.5 mm。光折射部501的頂面5〇lb與光軸冗的 交點至光出射面51之凹陷部510的表面與光軸z的交 點之距離(〇1)為〇.5mm,符合式(2)。第一反曲點至發光 二極體的發光面中心的連線與光軸z / 符合式⑷;第二反曲點至發光二:體夹的= 中心的連線與光軸z間的夾角(ei2)為55 59。,符合式⑺。 由第30圖至第32圖可知,來自發光二極體晶片4 的光束入射至光折射部50!後會朝向垂直於絲2的方 向偏折;來自#光二極體晶片4的光束經由光折射部5〇1 並入射至光出射面之凹陷部51〇的部份區域以及入 射至光出射面51之凸出部5U的第一反曲點&amp;附近 時,會發生全反射的現象,1大部分的%束於在第二反 曲點Pii外圍的凸出部511射出,藉此提高離軸區的光 強度。如此-來,可構成一近軸區亮度較低的環狀光型。 :&quot;光「極體晶片4的光束經由具有反曲點的光 子见5出射後’所形成的環狀光型的最大有效發散角 為150。、環狀光型的有效發散角寬度為19。、ΘΜ為64。、 環狀光型所環繞的令央暗區的邊界角度為32.79。、環狀 34 M424460 光型的高亮度區的内圈邊界角度為47.6。;環狀光型的 咼壳度區的外圈邊界角度為80.4。。於本實施例中’式(3) 及(7)的計算結果如下: tan(0s) = 0.54 kIn the present embodiment, the optical lens 5 having the inflection point is made of an optical plastic having a refractive index (Nd) of 1.53, which is 49 187. . The optical lens 5 having a 33 M42446 〇 recurve point has a diameter of 14 mm, and the light exit surface 5 iv recessed portion 51 is recessed from the inner edge of the convex portion 511 toward the light incident surface 5 ,, and is incident on the optical axis of the lens The concave surface of the apex is formed on Z. The distance from the optical axis Z to the horizontal plane where the light incident surface 50 is located is 3, the claw surface is 4.077 mm, and the top surface 5〇ib of the light refraction portion 5〇1 is a flat surface perpendicular to the pupil axis z, and The top surface 501b and the opening 5〇ia are respectively 〇.8 1«111 and 3.5 11^; and the light refracting portion 5〇1 is 2.5 mm along the optical axis 2. The distance (〇1) between the intersection of the top surface 5〇1b of the light-refracting portion 501 and the optical axis to the intersection of the surface of the depressed portion 510 of the light-emitting surface 51 and the optical axis z is 〇5 mm, which is in accordance with the formula (2). The line connecting the first inflection point to the center of the light emitting surface of the light emitting diode and the optical axis z / conforms to the formula (4); the second inflection point to the light two: the angle between the center line of the body clip and the optical axis z (ei2) is 55 59. , in accordance with formula (7). As can be seen from Fig. 30 to Fig. 32, the light beam from the light-emitting diode wafer 4 is incident on the light refraction portion 50! and is deflected toward the direction perpendicular to the filament 2; the light beam from the #2 photodiode wafer 4 is refracted via light. When a portion 5〇1 is incident on a partial region of the depressed portion 51〇 of the light exit surface and a vicinity of the first inflection point &amp; the incident portion 5U of the light exit surface 51, total reflection occurs, 1 Most of the % beam is emitted from the projection 511 at the periphery of the second inflection point Pii, thereby increasing the light intensity of the off-axis area. In this way, an annular light pattern having a low brightness in the paraxial region can be formed. :&quot; The maximum effective divergence angle of the annular light pattern formed by the light beam of the polar body wafer 4 after passing through the photons having the inflection point is 5, and the effective divergence angle of the annular light pattern is 19 ΘΜ is 64. The boundary angle of the dark region surrounded by the annular light pattern is 32.79. The inner ring boundary angle of the high-brightness region of the ring 34 M424460 light type is 47.6. The outer ring boundary angle of the shell region is 80.4. In the present embodiment, the calculation results of the equations (3) and (7) are as follows: tan(0s) = 0.54 k

Ιάθ 11.43 Ιάθ φ 因此,本實施例的具有反曲點的光學鏡片5的光折 ,部501符合式⑶’而發光裝置2所形成的環狀光型 符合式(6)及(9)。另外,由矩形座標配光曲線圖可知, 當光發散角小於40。時,|角度的發光強度約ο」]濁 光(cd)左右,亦即本創作的發光裝置2可避免近軸區過 梵而導致亮點的缺點。此外,藉由本實施例所形成的環 狀先型的而免度區與所環繞的中央暗區的光通量比值 約為11而最大有效發散角為150〇, 散光性的需求並降低色差。 %成一先心 • &lt;第八實施例&gt; 請J考”3圖至第36圖,其分別為本創作之 佈圖與矩形座標配光曲線圖路圖、極座標光強度分 於此實施射,除下列朗部 前述類似,於此不再贅述。 /、餘。卩伤均與 八)為第八實施例中具有反 片5的光出射面51於式(8)中的各項係數:.先予鏡 35 M424460 --色(八)、本實施例光出射面之非球面係數 曲率半徑(R)曲率 1.01E-09Ιά θ 11.43 Ιά θ φ Therefore, the optical folding of the optical lens 5 having the inflection point of the present embodiment, the portion 501 conforms to the formula (3)', and the annular light pattern formed by the light-emitting device 2 conforms to the equations (6) and (9). In addition, it can be seen from the rectangular coordinate light distribution graph that the light divergence angle is less than 40. At the time, the illuminating intensity of the angle is about ο"] turbid light (cd), that is, the illuminating device 2 of the present invention can avoid the disadvantage that the paraxial region passes through the Brahman and causes a bright spot. Further, the ratio of the luminous flux of the annular shape formed by the present embodiment and the surrounding central dark region is about 11 and the maximum effective divergence angle is 150 Å, and the astigmatism is required and the chromatic aberration is lowered. %一一一心心• &lt;Eighth Embodiment&gt; Please refer to "3" to 36th figure, which are respectively the layout diagram of the layout and rectangular coordinates of the creation, and the polar coordinates are divided into Except for the foregoing lang part, the above description will not be repeated. /, Yu. The injury and the eighth are the coefficients of the light exit surface 51 having the reverse sheet 5 in the eighth embodiment in the formula (8): Pre-mirror 35 M424460 - color (eight), the aspheric coefficient of the light exit surface of this embodiment has a curvature radius (R) curvature of 1.01E-09

K A2 A4 A6K A2 A4 A6

As Α|〇 -0.00397 2.46Ε-05 3.37Ε-06 -5.75Ε-08 本實施例中,具有反曲點的光學鏡片5的各項條件 皆與第一實施例相似,亦即,Lt為3 912 mm、第一與第 一反曲點的位置與第一實施例相同,而分別符合式(4) 及(5)。惟’具有反曲點的光學鏡片5的光入射面5〇之 光折射部501的形狀有所不同,本實施例的光折射部501 的頂面501b為面向發光二極體晶片4設置的凹面,該 頂面501b的曲率半徑為2 5mm,且頂面5〇lb、開口 501a 的直徑分別為1.4 mm及3.5 mm ;而光折射部501沿鏡 片光軸剖面的高為2 mm,D!為0.9 mm,符合式(2)。 相較於第四實施例,本實施例的光折射部5〇1的頂 面501a的直徑及斜面5〇lc的斜率均較大,亦即入射至 斜面501c的光束折射角度相較於第四實施例為大;又 由於光折射部501的斜面501c的偏折力大於頂面,使 得本實施例的近軸區的光強度略大於第四實施例的近 軸區的光強度。另外,由於第一實施例的光路走向說明 可適用於本實施例的光路走向,因此關於本實施例的第 34圖的說明請參照第一實施例的第6圖的說明,於此 便不再贅述。 來自發光二極體晶片4的光束經由具有反曲點的光 學鏡片5出射後,所形成的環狀光型的最大有效發散角 為164°、環狀光型的有效發散角寬度為23。、〜為72。、 環狀光型所環繞的中央暗區的邊界角度為3ι^。、環狀 光型的高亮度區的内圈邊界角度為56 〇5。;環狀光型的 36 M424460 高亮度區的外圈邊界角度為87.95。。於本實施例中,式 (3)及(7)的計算結果如下: tan(0s) = 0.525As Α|〇-0.00397 2.46Ε-05 3.37Ε-06 -5.75Ε-08 In this embodiment, the conditions of the optical lens 5 having the inflection point are similar to those of the first embodiment, that is, Lt is 3 The positions of the first and first inflection points of 912 mm are the same as those of the first embodiment, and conform to equations (4) and (5), respectively. However, the shape of the light refracting portion 501 of the light incident surface 5 of the optical lens 5 having the inflection point is different, and the top surface 501b of the light refracting portion 501 of the present embodiment is a concave surface facing the light emitting diode wafer 4. The radius of curvature of the top surface 501b is 25 mm, and the diameters of the top surface 5〇1b and the opening 501a are 1.4 mm and 3.5 mm, respectively; and the height of the light refraction part 501 along the optical axis of the lens is 2 mm, D! 0.9 mm, in accordance with equation (2). Compared with the fourth embodiment, the diameter of the top surface 501a of the light refraction part 5〇1 of the present embodiment and the slope of the inclined surface 5〇lc are both larger, that is, the angle of the light beam incident on the inclined surface 501c is larger than that of the fourth embodiment. The embodiment is large; and since the deflection force of the slope 501c of the light refraction portion 501 is larger than the top surface, the light intensity of the paraxial region of the present embodiment is slightly larger than that of the paraxial region of the fourth embodiment. In addition, since the description of the optical path of the first embodiment can be applied to the optical path of the present embodiment, the description of the 34th embodiment of the present embodiment will be referred to the description of the sixth embodiment of the first embodiment, and Narration. After the light beam from the light-emitting diode wafer 4 is emitted through the optical lens 5 having the inflection point, the annular effective light pattern has a maximum effective divergence angle of 164° and an annular light-type effective divergence angle width of 23. ~ is 72. The boundary angle of the central dark area surrounded by the annular light pattern is 3 ι^. The inner ring boundary angle of the high-luminance region of the ring-shaped light type is 56 〇5. The ring-shaped 36 M424460 high-brightness area has an outer ring boundary angle of 87.95. . In the present embodiment, the calculation results of the equations (3) and (7) are as follows: tan(0s) = 0.525

因此’本實施例的具有反曲點的光學鏡片5的光折 •射部1符合式(3),而發光裝置2所形成的環狀光塑 符合式(6)及(9)。另外’由矩形座標配光曲線圖可知, 當光發散角小於40。時,各角度的發光強度均小於2燭 光(cd),亦即發光裝置2的近軸區亮度相對地低,可避 免近軸區過亮而導致亮點的缺點。此外,藉由本實施例 所开&gt; 成的環狀光型的高亮度區與所環繞的中央暗區的 光通量比值約為10而最大有效發散角為164。,可達成 高均光與高散光性的需求並降低色差。 &lt;第九實施例&gt; 凊參考第3 7圖至第4 0圖’其分別為本創作之發光 裳置的第九實施例示意圖及其光路圖、極座標光強度分 佈圖與矩形座標配光曲線圖。 於此實施例中,除下列說明部份外,其餘部份均與 前述類似,於此不再贅述。 下列表(九)為第九實施例中具有反曲點的光學鏡 片5的光出射面51於式(8)中的各項係數: 表(九)、本實施例光出射面之非球面係數 37 M424460Therefore, the photorefractive portion 1 of the optical lens 5 having the inflection point of the present embodiment conforms to the formula (3), and the ring-shaped optical plastic formed by the light-emitting device 2 conforms to the formulas (6) and (9). In addition, it can be seen from the rectangular coordinate light distribution curve that the light divergence angle is less than 40. When the luminous intensity of each angle is less than 2 candelas (cd), that is, the brightness of the paraxial region of the light-emitting device 2 is relatively low, which avoids the disadvantage that the paraxial region is too bright to cause bright spots. Further, the luminous flux ratio of the annular light type high luminance region and the surrounding central dark region which is formed by the present embodiment is about 10 and the maximum effective divergence angle is 164. , to achieve high uniformity and high astigmatism and reduce chromatic aberration. &lt;Ninth Embodiment&gt; Referring to Figures 7 to 4, respectively, the schematic diagram of the ninth embodiment of the luminous projection of the present invention and its optical path diagram, polar coordinate light intensity distribution map and rectangular coordinate light distribution Graph. In this embodiment, except for the following description, the rest are similar to the foregoing, and will not be further described herein. The following table (9) is the coefficient of the light exit surface 51 of the optical lens 5 having the inflection point in the ninth embodiment in the formula (8): Table (9), the aspheric coefficient of the light exit surface of the present embodiment 37 M424460

八8Eight 8

Ajo -0.02709 -0.00397 2.46E-05 3.37E-06 -5.75E-08 本實施例中,具有反曲點的光學鏡片5的各項條件 白與第一實施例相似,亦即,Lt為3.912 mm、第一與第 二反曲點的位置與第一實施例相同,而分別符合式(4) 及(5)。惟’具有反曲點的光學鏡片5的光入射面50之 光折射部501的形狀有所不同,本實施例的光折射部501 的頂面501b為面向發光二極體晶片4設置的凹面,該 頂面501b的曲率半徑為〇 5 mm,且頂面501b、開口 501a 的直徑分別為〇·6 mm及3.5 mm ;而光折射部501沿鏡 片光軸剖面的咼為2 mm,Di為0.9 mm,符合式(2)。 相較於第四實施例,本實施例的光折射部5〇1的頂 面501a的直徑及斜面5〇lc的斜率均較小,由於光折射 部501的斜面501c的偏折力大於頂面5〇la,使得本實 施例的近轴區的光強度小於第四實施例的近軸區的光 強度。另外,由於第一實施例的光路走向說明可適用於 本實施例的光路走向,因此關於本實施例的第38圖的 說明請參照第一實施例的第6圖的說明,於此便不再贅 述。 來自發光二極體晶片4的光束經由具有反曲點的光 學鏡片5出射後’所形成的環狀光型的最大有效發散角 為162、壞狀光型的有效發散角寬度為29。、0M為7〇。、 環狀光型所環繞的中央暗區的邊界角度為31 9。、環狀 光型的南亮度區的内圈邊界角度為54.05。;環狀光型的 高亮度區的外圈邊界角度為85.95。。於本實施例中,式 38 M424460 (3)及(7)的計算結果如下: tan(0s) =0.725 kAjo -0.02709 -0.00397 2.46E-05 3.37E-06 -5.75E-08 In this embodiment, the conditions of the optical lens 5 having the inflection point are similar to those of the first embodiment, that is, Lt is 3.912 mm. The positions of the first and second inflection points are the same as those of the first embodiment, and conform to equations (4) and (5), respectively. However, the shape of the light refracting portion 501 of the light incident surface 50 of the optical lens 5 having the inflection point is different, and the top surface 501b of the light refracting portion 501 of the present embodiment is a concave surface facing the light emitting diode wafer 4. The radius of curvature of the top surface 501b is 〇5 mm, and the diameters of the top surface 501b and the opening 501a are 〇·6 mm and 3.5 mm, respectively; and the 折射 of the light refracting portion 501 along the optical axis of the lens is 2 mm, and Di is 0.9. Mm, in accordance with formula (2). Compared with the fourth embodiment, the diameter of the top surface 501a of the light refraction part 5〇1 of the present embodiment and the slope of the slope 5 〇lc are both small, since the deflection force of the slope 501c of the light refraction part 501 is larger than the top surface. 5〇la, the light intensity of the paraxial region of the present embodiment is made smaller than that of the paraxial region of the fourth embodiment. In addition, since the description of the optical path of the first embodiment can be applied to the optical path of the present embodiment, the description of the 38th embodiment of the present embodiment will be referred to the description of the sixth embodiment of the first embodiment, and Narration. The maximum effective divergence angle of the annular light pattern formed by the light beam from the light-emitting diode wafer 4 after exiting through the optical lens 5 having the inflection point is 162, and the effective divergence angle width of the bad light pattern is 29. 0M is 7〇. The boundary angle of the central dark area surrounded by the annular light pattern is 31 9 . The inner ring boundary angle of the south brightness region of the ring-shaped light type is 54.05. The annular area of the high-brightness area has an outer ring boundary angle of 85.95. . In the present embodiment, the calculation results of the equation 38 M424460 (3) and (7) are as follows: tan(0s) = 0.725 k

Ιάθ t 32.43 因此,本實施例的具有反曲點的光學鏡片5 ,部训符合式(3)’而發光裝置2所形成的環狀光^ 付合式(6)及(9)。另外,由矩形座標配光曲線圖可知, 當光發散角小於40。時,各角度的發光強度均小於〇5 濁光⑽’亦即發光裝置2的近軸區亮度相當地低,可 避免近軸區過亮而導致亮點的缺點。此外,藉由本實施 例所形,的環狀光型的高亮度區與所環繞的中央暗區 的,通量比值約為32而最大有效發散角為162。,可達 成面均光與高散光性的需求並降低色差。 轉述二本創作的具有反曲點的光學鏡片及 近轴區亮度低而具有高發散角的 :狀先孓’且其鬲売度區與中央暗區的光通量比值至少 ί=於35。藉此’當本創作的具有反曲點的光學鏡 片及其發光裝置應用於LED背光模組中時,可 、降低色差及毅高均光與高散光性的需求, 並有效減少LED組件的配置數目進而減少led 組的體積、減少背光模組中熱能的累積與降低成本。、 離太Γ上所述僅為舉例性’而非為限制性者。任何未脫 ”之精神與範嘴,而對其進行之等效修改或變 吏’均應包含於後附之申請專利範圍中。 39 M424460 【圖式簡單說明】 第1圖係為習知技藝之發光裝置之示意圖; 第2圖係為習知技藝之發光裝置之光型示意圖; 第3圖係為本創作之發光裝置之示意圖; 第4圖係為本創作之發光裝置之局部放大示意圖; 第5圖係為本創作之發光裝置之第一實施例的示意圖; 第ό圖係為本創作之發光裝置之第一實施例的光路圖; 第7圖係為本創作之發光裝置之第一實施例的極座標 光強度分佈圖; 第8圖係為本創作之發光装置之第一實施例的矩形座 標配光曲線圖; 第9圖係為本創作之發光裝置之第二實施例的示意圖; 第10圖係為本創作之發光裝置之第二實施例的光路 圖, 第11圖係為本創作之發光裝置之第二實施例的極座標 光強度分佈圖; 第12圖係為本創作之發光裝置之第二實施例的矩形座 標配光曲線圖; 第13圖係為本創作之發光裝置之第三實施例的示意 _, 第14圖係為本創作之發光裝置之第三實施例的光路 圖, 第15圖係為本創作之發光裝置之第三實施例的極座標 光強度分佈圖; M424460 第16圖係為本創作之發光裝置之第三實施例的矩形座 標配光曲線圖; 第17圖係為本創作之發光裝置之第四實施例的示意 圖, 第18圖係為本創作之發光裝置之第四實施例的光路 圖; 第19圖係為本創作之發光裝置之第四實施例的極座標 光強度分佈圖; • 第20圖係為本創作之發光裝置之第四實施例的矩形座 標配光曲線圖; 第21圖係為本創作之發光裝置之第五實施例的示意 圖; 第22圖係為本創作之發光裝置之第五實施例的光路 圖; 第23圖係為本創作之發光裝置之第五實施例的極座標 光強度分佈圖; 鲁第24圖係為本創作之發光裝置之第五實施例的矩形座 標配光曲線圖; 第25圖係為本創作之發光裝置之第六實施例的示意 圖; 第26圖係為本創作之發光裝置之第六實施例的光路 圖; 第27圖係為本創作之發光裝置之第六實施例的極座標 光強度分佈圖; M424460 第28圖係為本創作之發光裝置之第六實施例的矩形座 標配光曲線圖; 第29圖係為本創作之發光裝置之第七實施例的示意 S3 · 圚, 第30圖係為本創作之發光裝置之第七實施例的光路 _, 第31圖係為本創作之發光裝置之第七實施例的極座標 光強度分佈圖; 第32圖係為本創作之發光裝置之第七實施例的矩形座 標配光曲線圖; 第33圖係為本創作之發光裝置之第八實施例的示意 圖; 第34圖係為本創作之發光裝置之第八實施例的光路 圖; 第35圖係為本創作之發光裝置之第八實施例的極座標 光強度分佈圖; 第36圖係為本創作之發光裝置之第八實施例的矩形座 標配光曲線圖; 第37圖係為本創作之發光裝置之第九實施例的示意 圖; 第38圖係為本創作之發光裝置之第九實施例的光路 圖, 第39圖係為本創作之發光裝置之第九實施例的極座標 光強度分佈圖;以及 42 M424460 第40圖係為本創作之發光裝置之第九實施例的矩形座 標配光曲線圖。 【主要元件符號說明】 1 :發光裝置 10 :凹槽 11 :發光元件 12 :基板 13 :鏡片 130 :光出射面 130a :第一出光區域 130b :第二出光區域 2 :發光裝置(LED assembly) 3 :基板(substarct) 4 :發光二極體晶片(LED chip) 5 :具有反曲點的光學鏡片(aspherical LED lens) 50 :光入射面(light incident surface) 501 :光折射部(light refraction portion) 501a ·開口(opening section) 501b :頂面(top section) 501c :斜面(inclined section) 50Id :倒角(chamfer) 43 M424460 501e :微結構(micro-structure) 502 :平坦面(planar section) 51 :光出射面(light emitting surface) 510:凹陷部(recession portion) 510a :截平面(cross section) 511 :凸出部(protrusion portion) 512:垂直部(perpen(jicuiar p〇rti〇n) P i :第一反曲點 Pn :第二反曲點 P〇 .凹陷部與凸出部間之接點 z .光轴 與光m點至發光:極體晶片的發光面中心的連線 陷部的頂面與光轴的交點至光出射面之凹 陷邛的表面與光軸的交點之距離 的最t值光出射面任一點沿光軸方向至光入射面之距離 二::射部的斜面與平行於光軸的軸線間的夾角 連線與光軸的夾/至發光—極體晶#的發光面中心的 第二反曲點至發光二 連線與光轴的夹肖+體曰曰片的發先面中心的 44Ιάθ t 32.43 Therefore, the optical lens 5 having the inflection point of the present embodiment is in accordance with the formula (3)' and the ring-shaped light formed by the light-emitting device 2 (6) and (9). In addition, it can be seen from the rectangular coordinate light distribution graph that the light divergence angle is less than 40. When the luminous intensity of each angle is smaller than 〇5 turbid light (10)', that is, the brightness of the paraxial region of the illuminating device 2 is relatively low, and the disadvantage that the paraxial region is too bright to cause a bright spot can be avoided. Further, the high-luminance region of the annular light type and the central dark region surrounded by the present embodiment have a flux ratio of about 32 and a maximum effective divergence angle of 162. , to meet the needs of surface homogenization and high astigmatism and reduce chromatic aberration. The two optical lenses with recurve points and the low-brightness areas with low divergence angles are described as follows: the ratio of the luminous flux to the central dark region is at least 35. Therefore, when the optical lens with the inflection point and the light-emitting device thereof are applied to the LED backlight module, the requirements of chromatic aberration and high homogenization and high astigmatism can be reduced, and the number of LED components can be effectively reduced. Reduce the volume of the led group, reduce the accumulation of thermal energy in the backlight module and reduce the cost. The above description is for illustrative purposes only and is not a limitation. Any spirit and vanity that is not removed, and equivalent modifications or changes to it shall be included in the scope of the attached patent application. 39 M424460 [Simple description of the drawing] Figure 1 is a conventional skill 2 is a schematic view of a light-emitting device of a conventional art; FIG. 3 is a schematic view of a light-emitting device of the present invention; FIG. 4 is a partially enlarged schematic view of the light-emitting device of the present invention; 5 is a schematic view of a first embodiment of the illuminating device of the present invention; the first drawing is an optical path diagram of the first embodiment of the illuminating device of the present invention; and the seventh drawing is the first illuminating device of the present invention. The polar coordinate light intensity distribution diagram of the embodiment; FIG. 8 is a rectangular coordinate light distribution curve of the first embodiment of the light-emitting device of the present invention; FIG. 9 is a schematic view of the second embodiment of the light-emitting device of the present invention; 10 is an optical path diagram of a second embodiment of the illuminating device of the present invention, and FIG. 11 is a polar coordinate light intensity distribution diagram of the second embodiment of the illuminating device of the present invention; Device The rectangular coordinate light distribution graph of the second embodiment; FIG. 13 is a schematic view of the third embodiment of the light-emitting device of the present invention, and FIG. 14 is a light path diagram of the third embodiment of the light-emitting device of the present invention. Figure 15 is a polar coordinate light intensity distribution diagram of a third embodiment of the light-emitting device of the present invention; M424460 Figure 16 is a rectangular coordinate light distribution curve of the third embodiment of the light-emitting device of the present invention; A schematic diagram of a fourth embodiment of the illuminating device of the present invention, FIG. 18 is an optical path diagram of a fourth embodiment of the illuminating device of the present invention; and FIG. 19 is a polar coordinate of the fourth embodiment of the illuminating device of the present invention Light intensity distribution map; • Fig. 20 is a rectangular coordinate light distribution curve of the fourth embodiment of the light-emitting device of the present invention; FIG. 21 is a schematic view of the fifth embodiment of the light-emitting device of the present invention; The optical path diagram of the fifth embodiment of the illuminating device of the present invention; FIG. 23 is a polar light intensity distribution diagram of the fifth embodiment of the illuminating device of the present invention; First 5 is a schematic diagram of a rectangular coordinate light distribution; FIG. 25 is a schematic view of a sixth embodiment of the light-emitting device of the present invention; and FIG. 26 is a light path diagram of a sixth embodiment of the light-emitting device of the present invention; The figure is a polar coordinate light intensity distribution diagram of the sixth embodiment of the illuminating device of the present invention; M424460 FIG. 28 is a rectangular coordinate light distribution curve of the sixth embodiment of the illuminating device of the present invention; Illustrated in the seventh embodiment of the illuminating device of the present invention, FIG. 30 is an optical path of the seventh embodiment of the illuminating device of the present invention, and FIG. 31 is a seventh embodiment of the illuminating device of the present invention. Figure 32 is a diagram showing a rectangular coordinate light distribution curve of a seventh embodiment of the present invention; FIG. 33 is a schematic view showing an eighth embodiment of the light-emitting device of the present invention; The optical path diagram of the eighth embodiment of the illuminating device of the present invention; the 35th is the polar coordinate light intensity distribution diagram of the eighth embodiment of the illuminating device of the present invention; the 36th figure is the illuminating device of the present invention Eight A rectangular coordinate light distribution diagram of the embodiment; FIG. 37 is a schematic view of a ninth embodiment of the light-emitting device of the present invention; and FIG. 38 is a light path diagram of the ninth embodiment of the light-emitting device of the present invention, FIG. The polar coordinate light intensity distribution diagram of the ninth embodiment of the illuminating device of the present invention; and 42 M424460 FIG. 40 is a rectangular coordinate light distribution curve of the ninth embodiment of the illuminating device of the present invention. [Main component symbol description] 1 : Light-emitting device 10 : Groove 11 : Light-emitting element 12 : Substrate 13 : Lens 130 : Light exit surface 130a : First light-emitting area 130 b : Second light-emitting area 2 : Light-emitting device (LED assembly) 3 : Substrate 4 : LED chip 5 : Aspherical LED lens 50 : Light incident surface 501 : Light refraction portion 501a · opening section 501b : top section 501c : inclined section 50Id : chamfer 43 M424460 501e : micro-structure 502 : planar section 51 : Light emitting surface 510: recession portion 510a: cross section 511: protrusion portion 512: vertical portion (perpen (jicuiar p〇rti〇n) P i : The first inflection point Pn: the second inflection point P〇. the junction between the depressed portion and the convex portion z. The optical axis and the light m point to the light emitting: the top of the connecting trap at the center of the light emitting surface of the polar body wafer The intersection of the surface and the optical axis to the concave of the light exit surface The most t-value of the distance between the trapped surface and the optical axis, the distance from the optical axis to the light incident surface at any point of the light exit surface: the angle between the slope of the shot and the axis parallel to the optical axis The optical axis of the clip / to the illuminating - the second inflection point of the center of the illuminating surface of the polar body crystal # to the illuminating two line and the optical axis of the clip + + body 的 的 发 中心 44 44

Claims (1)

M424460 六、申請專利範圍: 1· 種具有反曲點的光學鏡片’適用於一發光二極體背 光源之一發光裝置,該發光裝置包含一發光二極體晶 片及該具有反曲點的光學鏡片,該具有反曲點的光學 鏡片係設置於該發光二極體晶片之上緣; 該具有反曲點的光學鏡片具有一光入射面與一光 出射面;該光入射面包含一光折射部,該光折射部為 截頭圓錐凹穴的形狀,該光折射部係對稱於該具 • 反曲點的光學鏡片的一光軸且具有一開口、一頂面及 一斜面’該頂面係與該開口對應地設置,該開口的直 徑大於該頂面的直徑,該斜面係連接該開口與該頂面 且與平行於該光軸的軸線具有一夾角; 邊具有反曲點的光學鏡片之該光出射面為對稱 於該光軸的非球面,該光出射面包含一凹陷部及一凸 出部,該凹陷部係位於該光出射面的中央,該凸出部 係連接於該凹陷部之外圍且其表面具有至少一反 • 點; 其中,該反曲點滿足下列條件: 45°^θί^70° ; 其中鳴為該反曲點至該發光二極體晶片的發光 面中心的連線與該光軸的夾角。 1項所述的具有反曲點的光學鏡 片’其中該光折射部滿足以下條件: D!^〇.5*Lt 其中’A為該光折射部的該頂面與該光軸的交 45 M424460 點至該光出射面之該凹陷部的表面與該光軸的交點 之距離;Lt為該光出射面任一點沿該光軸方向至該光 入射面之距離的最大值。 3. 如申請專利範圍第2項所述的具有反曲點的光學鏡 片’其中該光折射部之該頂面為一平坦面。 4. 如申請專利範圍第2項所述的具有反曲點的光學鏡 月’其令該光折射部之該頂面為一凹面,並面向該開 D 〇 5·如申請專利範圍帛!項所述的具有反曲點的光學鏡 片,其中該光出射面之該凹陷部進一步包含一截 該截平面設置於該具有反曲點的光學鏡片的近轴 處且垂直於該光軸。 =申”利觸!項所述的具有反 二該凹陷部為自該凸出部的= 朝該先入射面的方向下凹並於該光轴上 凹面,且該凹陷部的凹面面向該光入射面。的 7. Γ=Γ第1項所述的具有反曲點的光學鏡 二:其^光人射面的該光折射部進—步滿足以^ 〇^tan(0s)^ 1 其中,es為該光折射部的該 的軸線間的夾角。 /、十仃於该光軸 8. 如申請專利範圍第丨項所述的具 片’其中該光出射面之該凸出部至少包含 46 1 第一反曲點,該第—反曲點位於該凹 第二反曲 ^ 1 曲點之間,且滿足以下條件: 45〇$〇丨1$55。;以及 55° &lt; θί2 ^ 70° ; 靜ίΐ,為該第—反曲點至該發光二極體晶片 Ζ先面中心的連線與該光軸的炎角;ei2為該第二 =光二極體晶片的發光面中心的連線與 9. 一種發光裝置,包含: 一基板; -發光二極體晶片’係固定於該基板上 出一光束;及 -具有反曲點的光學鏡片,係設置於該發光二極 體晶片之上緣’且該具有反曲點的光學鏡片的一光轴 係垂直於該發光二極體晶片之發光面,該具有反曲點 的先學鏡片包含-光入射面及一光出射面,經由該光 入射面人射且出射於該光出射面的該光束係以該光轴 為中心形成-中央較暗且週圍較亮的環狀光型,該環 狀光型包括-高亮度區及一中央暗區,該高亮度區環 繞該中央暗區之外圍,該環狀光型滿足以下條件. 3&lt;yt&lt;35 ; 47 M424460 其中 Ί ' ^=90^8^-^-; l lde nd 其中,k為該環狀光型的該高亮度區與該中央暗區 的光通量比值’ϊ為在θ角度下的光強度,θ為該環狀 光型任一點至該發光二極體晶片的發光面中心的連線 與該光軸的夾角,θτ為該光出射面的全反射臨界角相 對於該光轴之補角;θΜ為該發光二極體晶片之發光面 中心至該環狀光型的光強度峰值的連線與該光軸間的 夾角;〜為空氣的折射率;nd為該具有反曲點的光學 鏡片的折射率; 干 其中,該具有反曲點的光學鏡片之該光入射面包 含一光折射部,該光折射部係對稱於該光軸且具有— ,口、-頂面及一斜面,該開口設置於該發光:極體 晶片的發光面上,該頂面係與該開口對應地設置,該 開二口的直徑大於該頂面的直徑,該斜面係連接該開口 與該頂面且與平行於該光軸的軸線具有一夾角; 一其令,該具有反曲點的光學鏡片之該光出射面為 一對稱於該光軸的非球面,該光出射面包含一凹陷部 及一凸出部,該凹陷部係位於該光出射面的中央, 凸出部係連接於該凹陷部之外園且其表面具有至少」 反曲點; 其中,該反曲點滿足下列條件: 45〇^〇i^7〇° ; 其中,θ;為該反曲點至該發光二極體的發光面中 48 M424460 心 '的連線與該光轴的夾角; 其中’該環狀光型之光強度峰值產生於自該凸出 部出射的該光束中。 10·如申請專利範圍第9項所述的發光裝置,其中, 該具有反曲點的光學鏡片之該凹陷部為面向該光入 射面並於該光轴上形成一頂點的凹面,且該環狀光型 的該高亮度區與該中央暗區的光通量比值k係進一 步地小於等於35且大於等於8。 11.如申請專利範圍第9項所述的發光裝置,其中, 該具有反曲點的光學鏡片的該光出射面之該凹陷部 進一步包含一截平面,該截平面設置於該具有反曲點 的光學鏡片的近軸處且垂直於該光軸,且該環狀光型 的該高亮度區與該中央暗區的光通量比值k係進一 步地小於等於8且大於等於3。 49M424460 VI. Patent Application Range: 1. An optical lens with an inflection point is suitable for a light-emitting device of a light-emitting diode backlight, the light-emitting device comprising a light-emitting diode chip and the optical with an inflection point a lens having an inflection point disposed on an upper edge of the LED; the optical lens having an inflection point having a light incident surface and a light exit surface; the light incident surface comprising a light refraction The light refraction portion is in the shape of a truncated conical recess, the light refraction portion being symmetrical to an optical axis of the optical lens having an inflection point and having an opening, a top surface and a slope surface Corresponding to the opening, the diameter of the opening is larger than the diameter of the top surface, the slope connecting the opening to the top surface and having an angle with an axis parallel to the optical axis; the optical lens having an inflection point The light exit surface is an aspheric surface symmetrical to the optical axis, and the light exit surface includes a concave portion and a convex portion, the concave portion is located at a center of the light exit surface, and the convex portion is connected to the concave portion Ministry The periphery has a surface having at least one opposite point; wherein the inflection point satisfies the following condition: 45°^θί^70°; wherein the sound is the line connecting the inflection point to the center of the light emitting surface of the light emitting diode chip The angle with the optical axis. The optical lens having an inflection point according to Item 1 wherein the light refraction portion satisfies the following condition: D!^〇.5*Lt where 'A is the intersection of the top surface of the light refraction portion and the optical axis 45 M424460 a distance from the intersection of the surface of the recessed portion of the light exit surface and the optical axis; Lt is the maximum value of the distance from the optical axis to the light incident surface at any point of the light exit surface. 3. The optical lens having an inflection point as described in claim 2, wherein the top surface of the light refraction portion is a flat surface. 4. The optical lens having an inflection point as described in claim 2, wherein the top surface of the light refraction portion is a concave surface and faces the opening D 〇 5 · as claimed in the patent scope! The optical lens having an inflection point, wherein the recess of the light exit surface further comprises a section of the truncation plane disposed at a paraxial axis of the optical lens having an inflection point and perpendicular to the optical axis. = ” 利 利 ! 项 项 项 项 项 项 项 项 项 项 项 项 项 项 项 项 该 利 利 利 利 利 利 利 利 利 利 利 利 利 利 利 利 利 利 利 利 利 利 利 利 利 利 利 利 利 利7. The incident surface. 7. Γ = 光学 The optical mirror with the inflection point described in Item 1: The light refracting portion of the light human surface is satisfied by ^ 〇 ^ tan (0s) ^ 1 And es is the angle between the axes of the light refracting portion. The slab of the light-emitting portion of the light-emitting portion is at least 46 1 The first inflection point, the first inversion point is located between the concave second recursive ^ 1 curvature points, and satisfies the following condition: 45〇$〇丨1$55.; and 55° &lt; θί2 ^ 70 °; Static ΐ, is the connection between the first - inflection point to the center of the ancest face of the LED chip and the optical axis; ei2 is the connection of the center of the light-emitting surface of the second = photodiode wafer a light-emitting device comprising: a substrate; a light-emitting diode chip fixed to the substrate with a light beam; and an optical mirror having an inflection point An optical axis of the optical lens having an inflection point is perpendicular to a light emitting surface of the light emitting diode chip, and the prior art lens having an inflection point includes a light incident surface and a light exit surface, wherein the light beam emitted through the light incident surface and emitted to the light exit surface is formed around the optical axis - an annular light pattern having a dark center and a bright surrounding, The annular light pattern includes a high luminance region and a central dark region surrounding the periphery of the central dark region, and the annular light pattern satisfies the following condition: 3 &lt;yt&lt;35; 47 M424460 wherein ^ ' ^=90 ^8^-^-; l lde nd where k is the luminous flux ratio of the high-luminance region of the annular light pattern and the central dark region 'ϊ is the light intensity at the angle θ, and θ is the annular light pattern An angle between a line connecting the center of the light-emitting surface of the light-emitting diode wafer and the optical axis, θτ is a complementary angle of a total reflection critical angle of the light-emitting surface with respect to the optical axis; θΜ is the light-emitting diode a line connecting the center of the light emitting surface of the wafer to the peak of the light intensity of the annular light pattern and the optical axis An angle of the air; nd is the refractive index of the optical lens having the inflection point; wherein the light incident surface of the optical lens having the inflection point includes a light refraction portion, the light refraction portion Symmetrical to the optical axis and having - a mouth, a top surface and a slope, the opening being disposed on the light emitting surface of the polar body wafer, the top surface being disposed corresponding to the opening, the diameter of the opening Increasing the diameter of the top surface, the slope connecting the opening to the top surface and having an angle with an axis parallel to the optical axis; wherein the light exit surface of the optical lens having the inflection point is a symmetry In the aspherical surface of the optical axis, the light exit surface includes a recessed portion and a protruding portion, the recessed portion is located at a center of the light exiting surface, and the protruding portion is connected to the recessed portion and has at least a surface thereof The inflection point; wherein the inflection point satisfies the following condition: 45〇^〇i^7〇°; wherein θ is the connection of the inversion point to the 48 M424460 heart in the light emitting surface of the light emitting diode The angle between the line and the optical axis; where 'this The light intensity of the peak-shaped pattern of light generated in the light beam emitted from the convex portion of. The illuminating device of claim 9, wherein the recessed portion of the optical lens having the inflection point is a concave surface facing the light incident surface and forming an apex on the optical axis, and the ring The luminous flux ratio k of the high-luminance region of the light-like type and the central dark region is further less than or equal to 35 and greater than or equal to 8. 11. The illuminating device of claim 9, wherein the recessed portion of the light exit surface of the optical lens having an inflection point further comprises a section plane, the section plane being disposed at the inflection point The optical lens has a paraxial axis and is perpendicular to the optical axis, and the luminous flux ratio k of the high-luminance region of the annular optical pattern and the central dark region is further less than or equal to 8 and greater than or equal to 3. 49
TW100215394U 2011-08-17 2011-08-17 Optical lens with inflection point and light-emitting device consisting of the optical lens thereof TWM424460U (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI479107B (en) * 2012-11-20 2015-04-01 E Pin Optical Industry Co Ltd Led light distributing lens and light source apparatus using the same
CN104681697A (en) * 2013-11-29 2015-06-03 鸿富锦精密工业(深圳)有限公司 Light-emitting component
TWI499743B (en) * 2012-04-17 2015-09-11 Aether Systems Inc Light emitting device and optical lens thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI499743B (en) * 2012-04-17 2015-09-11 Aether Systems Inc Light emitting device and optical lens thereof
TWI479107B (en) * 2012-11-20 2015-04-01 E Pin Optical Industry Co Ltd Led light distributing lens and light source apparatus using the same
CN104681697A (en) * 2013-11-29 2015-06-03 鸿富锦精密工业(深圳)有限公司 Light-emitting component

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