M397681 五、新型說明： 【新型所屬之技術領域】 本創作是有關於一種具有移除區的線路板，且特別是 有關於一種可有效控制雷射加工深度之具有移除區的線$ 板。 【先前技術】 兩著市場對於電子產品具有輕薄短小且攜帶方便的 ，求，因此電子產品中的電子零件亦需隨之朝向小型化與 簿4•化的方向發展。為此，習知技術提出一種局部降低 路板厚度的方法。 、 圖1A至圖ic為習知的線路板的製程剖面圖。圖2 為圖1^至圖ic中之線路基板的上視圖，其中圖1A至圖 1C為習知的線路板製程沿圖2中的1-1，線段的剖面圖。 首先’請同時參照圖1A與圖2,提供一線路基板1〇〇, 其具有第一介電層11〇、一第二介電層u〇、—線路層 130、一第三介電層14〇以及一第四介電層15〇。第二介電 三介電層14G以及第四介電層15G依序堆4於 弟了介電2 U。上’且線路層13。配置於第二介電層120 上並位於第二與第三介電層120、140之間。線路基板100 具有—預移除區L。 命> 接著、，請參照圖1B，以雷射加工的方式移除第三介 :、:二〇 '及第四介電層150之位於預雜區匕周邊的部 /刀。’、、'、後’請參照圖lc’移除第三介電層14〇上乂及第四介 4 M397681 ι· 電層150之位於預移除區L内的部分，以形成一移除區 L1 ’此時，已大致形成一線路板p。由於線路板p的移除 區L1的厚度小於線路板p之其他區域的厚度，因此，在 實際應用上，電子元件200可配置於移除區以内，如此， 可降低線路板P與配置於其上的電子元件2〇〇的總厚度。 然而，以雷射加工的方式移除第三介電層14〇以及第 四介電層150時，不易控制雷射加工的深度。因此，容易 過度燒蝕（over trench)第二介電層12〇甚至是第一介電 【新型内容】 >本創作提出一種具有移除區的線路板，特別是具有可 有效控制雷射加工深度的線路板結構。 本創作提出一種線路板，其具有一移除區。線路板包 括-第-介電層、-第—雷射阻擋結構、—第二介電層、 -線路層、-第二雷射阻擋結構以及—第三介電層。^一 雷射阻擋結構配置於第-介電層的—第—表面/且位於 j區邊緣。第二介電層配置於第—介電層上，並覆蓋第 由射阻播結構。線路肢置於第二介電層的—第二表面 上’且部分線路層由移魏外延伸進移除_。第二雷射 置於第二表面上並位於移除區邊緣，且與線路 I巴緣’弟―雷射阻擋結構與線路層之 表面上的垂直投影與第—雷射阻擔結構重 豐。弟三〃電層配置於第二介電層上，並具有對應移除區 的—Βθ _ -八I ’開口暴露出線路層之位於移除區内的部分。第 —介電層覆蓋部分第二雷射阻擋結構。 —在^創作之—實施例中’第二雷射阻播結構為一環狀 j %狀結構具有至少一缺口，且線路層由缺口延伸進 ί〇Ρ 内。 h pt創作之—實施财，#第二雷射阻播結構與線路 i立間隙時，第-雷射阻擋結構包括多個彼此 t創作之—實施财，第―雷射阻擋結構包括一條 〆知、狀結構，且條狀結構或環狀結構與第二雷射 备、、’口構於第一表面上的垂直投影重疊。 在本創作之—實施例中，第二介電層具有至少一凹槽 ，且凹槽位於間隙下方，且凹槽暴露出第一雷射 阻擒結構。 於本創作之—實施例中’線路板更包括—第三雷射阻 二；：’第,雷射阻擋結構配置於第二表面上並位於預移 二品緣第一雷射阻擔結構與線路層之位於移除區邊緣 、部分相連’並與第二雷射喊結構絕緣。 在士創作之—實_巾，祕板更包括—保護層，保 &層覆盍線路層之位於移除區内的部分。 在本創作之一實施例中，開口暴露出第二雷射阻擒結 構之位於移除區内的部分。 本創作知1出一種線路板，其具有一移除區，線路板包 聊7681 配層介; 由除區内。雷射阻擔結構== r，路層之間存在至少-間隙:第:介;= ^一"电層上，並具有對應移除區的—開口，二吴 線路層之位於移除區内的部分。 + 括種線路板，其具有―移除區，線路板包 一層、—線路層以及—第二介電層。線路層配 2第-介電層的—表社’且部分線路層由移除區外延 伸進移除區内。第二介電層配置於第—介 對應移除區的-開口 ’開口暴露出線路層之^於移除區内 的部分’其中第二介電層與第—介電層之間存在—橫向空 槽，且橫向空槽位於移除區邊緣並與開口連通。 ，上所述，由於本創作之具有移除區的線路板具有第 一與第二雷射阻擋結構，故本創作可利用第二雷射阻擋結 構來控制雷射加工的深度，並可利用第一雷射阻擋結構保 護其下的第一介電層免於受到雷射加工的影響。 為讓本創作之上述和其他目的、特徵和優點能更明顯 易懂，下文特舉實施例，並配合所附圖式，作詳細說明如 下。 【實施方式】 圖3A至圖3D’與圖4A至圖4C為本創作一實施例之 線路板的製程剖面圖。圖5為圖3A至圖3C與圖4A至圖 4C之基板的線路層與第二雷射阻擋結構的上視圖。圖6 為圖3A至圖3C與圖4A至圖4C之基板的第一雷射阻擋 結構的上視圖。M397681 V. New description: [New technical field] This creation is related to a circuit board with a removal zone, and in particular to a wire $ board with a removal zone that can effectively control the depth of laser processing. [Prior Art] In the market, electronic products are light, short, and portable, so electronic components in electronic products must be developed in the direction of miniaturization and bookkeeping. To this end, the prior art proposes a method of locally reducing the thickness of the road plate. 1A to 1C are process cross-sectional views of a conventional circuit board. 2 is a top view of the circuit substrate of FIGS. 1 to ic, wherein FIGS. 1A to 1C are cross-sectional views of a conventional circuit board process taken along line 1-1 of FIG. First, please refer to FIG. 1A and FIG. 2 simultaneously to provide a circuit substrate 1 具有 having a first dielectric layer 11 , a second dielectric layer 〇 , a circuit layer 130 , and a third dielectric layer 14 . And a fourth dielectric layer 15〇. The second dielectric three dielectric layer 14G and the fourth dielectric layer 15G are sequentially stacked 4 in the dielectric 2 U. Up' and circuit layer 13. The second dielectric layer 120 is disposed between the second and third dielectric layers 120, 140. The circuit substrate 100 has a pre-removal area L. Next, referring to FIG. 1B, the third device is removed by laser processing: the second dielectric layer and the portion of the fourth dielectric layer 150 located around the pre-pitched region. ',, ', and then 'please refer to FIG. 1c' to remove the third dielectric layer 14 and the fourth layer 4 M397681 ι · the portion of the electrical layer 150 located in the pre-removed area L to form a removal The area L1 ' at this time, a circuit board p has been roughly formed. Since the thickness of the removal region L1 of the circuit board p is smaller than the thickness of other regions of the circuit board p, in practical applications, the electronic component 200 can be disposed within the removal region, so that the circuit board P can be lowered and disposed therein. The total thickness of the upper electronic component 2〇〇. However, when the third dielectric layer 14A and the fourth dielectric layer 150 are removed by laser processing, it is difficult to control the depth of the laser processing. Therefore, it is easy to over-tread the second dielectric layer 12 or even the first dielectric [new content] > This creation proposes a circuit board having a removal area, particularly having an effective control of laser processing Deep circuit board structure. The present invention proposes a circuit board having a removal area. The circuit board includes a -first dielectric layer, a -th laser blocking structure, a second dielectric layer, a circuit layer, a second laser blocking structure, and a third dielectric layer. A laser blocking structure is disposed on the -first surface of the first dielectric layer and at the edge of the j region. The second dielectric layer is disposed on the first dielectric layer and covers the first radiation blocking structure. The line limbs are placed on the second surface of the second dielectric layer and a portion of the circuit layer is extended and removed by the extension. The second laser is placed on the second surface and located at the edge of the removal zone, and is perpendicular to the vertical projection and the first laser resisting structure on the surface of the line-side of the laser-blocking structure and the circuit layer. The third electrical layer is disposed on the second dielectric layer and has a corresponding 移除θ _ - 八 I ′ opening corresponding to the removed region to expose a portion of the wiring layer located within the removed region. The first dielectric layer covers a portion of the second laser blocking structure. - In the embodiment - the second laser blocking structure is a ring-shaped j-like structure having at least one notch, and the circuit layer extends from the notch into the 〇Ρ. h pt creation - implementation of wealth, #2 laser blocking structure and line i vertical gap, the first laser blocking structure includes a plurality of mutual creations - implementation of wealth, the first - laser blocking structure including a know a structure, and the strip structure or the ring structure overlaps with the vertical projection of the second laser preparation, the 'mouth structure' on the first surface. In an embodiment of the present invention, the second dielectric layer has at least one recess and the recess is located below the gap, and the recess exposes the first laser resistive structure. In the present invention - the circuit board further includes a third laser resistance 2;: ', the laser blocking structure is disposed on the second surface and is located in the pre-shifted second edge first laser blocking structure and The circuit layer is located at the edge of the removal zone, partially connected 'and insulated from the second laser shouting structure. In the creation of the creed - the real _ towel, the secret board also includes - the protective layer, the protection & layer covering the part of the circuit layer located in the removal zone. In one embodiment of the present invention, the opening exposes a portion of the second laser barrier structure located within the removal zone. This creation knows that a circuit board has a removal area, and the circuit board is packaged with a 7681 layer; The laser resisting structure == r, there is at least - gap between the road layers: the first: the middle; the ^ ^ " on the electrical layer, and has the opening corresponding to the removal zone, the Erwu circuit layer is located in the removal zone Inside part. + A circuit board with a "removal area, a circuit board package, a circuit layer, and a second dielectric layer. The wiring layer is provided with a second dielectric layer and a portion of the wiring layer is extended from the removal region into the removal region. The second dielectric layer is disposed in the opening-opening of the first dielectric-removed region to expose a portion of the wiring layer in the removed region, wherein the second dielectric layer and the first dielectric layer are present - lateral An empty slot and a lateral recess is located at the edge of the removal zone and is in communication with the opening. As described above, since the circuit board with the removal area of the present invention has the first and second laser blocking structures, the second laser blocking structure can be used to control the depth of the laser processing, and the A laser blocking structure protects the underlying first dielectric layer from laser processing. The above and other objects, features, and advantages of the present invention will become more apparent and understood. [Embodiment] Figs. 3A to 3D' and Figs. 4A to 4C are cross-sectional views showing a process of a circuit board according to an embodiment of the invention. Figure 5 is a top plan view of the circuit layer and the second laser blocking structure of the substrate of Figures 3A-3C and 4A-4C. Figure 6 is a top plan view of the first laser blocking structure of the substrate of Figures 3A-3C and 4A-4C.
值得注意的是，圖5 ψ Ι-Γ線段的位置對應圖6中 Η的位置，且圖3Α至圖3C為本創作—實施例之線路板 製程沿圖5與圖6中I-Γ線段的剖面圖。圖5中u-ir線 段的位置對應圖6中Π-Π，線段的位置，且圖4A至圖4C 為本創作一實施例之線路板製程沿圖5與圖6中π_π，線 段的剖面圖。 首先，請同時參照圖3A、圖4A、圖5與圖6，提供 一基板S，基板S具有一預移除區L。基板s包括一第一 w電層310、一苐一雷射阻擔結構32〇、—第二介電層330、 一線路層340、一第二雷射阻擋結構35〇以及一第三介電 層 360。 第一雷射阻擋結構320配置於第一介電層31〇的一第 一表面312上，且位於預移除區L邊緣。第1介電層33〇It should be noted that the position of the ψ Ι-Γ line segment of FIG. 5 corresponds to the position of Η in FIG. 6 , and FIG. 3 Α to FIG. 3C are the circuit board processes of the creation-embodiment according to the I-Γ line segment of FIG. 5 and FIG. 6 . Sectional view. 5 is the position of the line segment of FIG. 6 , and FIG. . First, please refer to FIG. 3A, FIG. 4A, FIG. 5 and FIG. 6, simultaneously, a substrate S having a pre-removed area L. The substrate s includes a first electrical layer 310, a laser resistive structure 32, a second dielectric layer 330, a circuit layer 340, a second laser blocking structure 35A, and a third dielectric. Layer 360. The first laser blocking structure 320 is disposed on a first surface 312 of the first dielectric layer 31 and is located at the edge of the pre-removed area L. First dielectric layer 33〇
民面332上並位於 。一部分的第二雷 預移除區L邊緣，且與線路層34〇絕緣。 射阻擋結構350位於預移除區l内，而另 而另一部分的第二雷 M397681 射阻擋結構350位於預移除區L外。第二雷射阻擋結構35〇 ”線路層340之間存在多個間隙g ,且間隙g於第一表面 312上的垂直投影與第一雷射阻擋結構320重疊。 第三介電層360配置於第二介電層33〇上，並覆蓋線 =層340與第二雷射阻擋結構35〇。在本實施例中，基板s 還包括一配置於第三介電層360上的一第四介電層370。 在本實施例中，基板S還包括一保護層380，其覆蓋 線路層340之位於預移除區l内的部分，以於後續製程中 保護線路層340免於受到移除第三與第四介電層360、370 的影響。 接著，請同時參照圖3B、圖4B、圖5與圖6，進行 一雷射加工製程，以蝕刻位於預移除區[邊緣的第三介電 層360與第四介電層370。雷射加工製程在第三介電層360 與第四介電層370上形成多個凹槽τ，且這些凹槽T暴露 出位於預移除區L邊緣的第二雷射阻擋層350與線路層 340 〇 具體而言，雷射加工是作用在預移除區L的邊緣（即 圖5與圖6中標示為L的虛線之處）。因此，當雷射穿過 第二與第四介電層360、370後，會被第二雷射阻擋結構 350阻擒。如此一來，本實施例可利用第二雷射阻擋結構 350來控制雷射加工的深度，進而提升製程良率。 此外’為提升第二雷射阻擋結構350阻擋雷射加工的 效果’本實施例之第二雷射阻擋結構35〇的寬度D大於雷 射光束的徑度。因此，在較佳的情況下，凹槽T僅暴露出 M397681 第二雷射阻擋結構350之位於預移除區L邊緣的部分。 值得注意的是’由於本實施例的基板S具有第—雷射 阻擋結構320,故當雷射穿過間隙G下方的第二介電層33〇 時，會被間隙G下方的第一雷射阻擋結構32〇阻擋。因此， 第一雷射阻擋結構320可保護其下的第一介電層31〇免於 受到雷射加工的影響，並有助於控制雷射加工的深度。此The 332 is located on the same side. A portion of the second mine pre-removed the edge of the zone L and is insulated from the wiring layer 34. The shot blocking structure 350 is located in the pre-removal zone 1 while the other portion of the second mine M397681 radiation blocking structure 350 is located outside the pre-removal zone L. There is a plurality of gaps g between the second laser blocking structures 35 〇 ”, and a vertical projection of the gaps g on the first surface 312 overlaps with the first laser blocking structures 320. The third dielectric layer 360 is disposed on The second dielectric layer 33 is disposed on the second dielectric layer 360. The substrate s further includes a fourth dielectric layer disposed on the third dielectric layer 360. The electrical layer 370. In this embodiment, the substrate S further includes a protective layer 380 covering a portion of the wiring layer 340 located in the pre-removal region 1 to protect the circuit layer 340 from being removed in a subsequent process. The influence of the third and fourth dielectric layers 360, 370. Next, please refer to FIG. 3B, FIG. 4B, FIG. 5 and FIG. 6 simultaneously to perform a laser processing process to etch the third layer in the pre-removal area [edge] The electrical layer 360 and the fourth dielectric layer 370. The laser processing process forms a plurality of recesses τ on the third dielectric layer 360 and the fourth dielectric layer 370, and the recesses T are exposed in the pre-removed area L. The edge of the second laser blocking layer 350 and the wiring layer 340. Specifically, the laser processing is applied to the edge of the pre-removed area L ( That is, the dotted line labeled L in Fig. 5 and Fig. 6. Therefore, when the laser passes through the second and fourth dielectric layers 360, 370, it is blocked by the second laser blocking structure 350. In this embodiment, the second laser blocking structure 350 can be used to control the depth of the laser processing, thereby improving the process yield. Further, 'the effect of blocking the laser processing for improving the second laser blocking structure 350'. The width D of the second laser blocking structure 35A is larger than the diameter of the laser beam. Therefore, in the preferred case, the groove T only exposes the edge of the pre-removed area L of the M397681 second laser blocking structure 350. It is worth noting that since the substrate S of the present embodiment has the first laser blocking structure 320, when the laser passes through the second dielectric layer 33 below the gap G, it will be the second under the gap G. A laser blocking structure 32 is blocked. Therefore, the first laser blocking structure 320 protects the underlying first dielectric layer 31 from laser processing and helps control the depth of the laser processing. this
時，雷射加工製程例如是在間隙G下方的第二介電層33〇 上形成凹槽334。 SIn the laser processing process, for example, a recess 334 is formed on the second dielectric layer 33A below the gap G. S
然後’請同時參照圖3C、圖4CThen, please refer to Figure 3C and Figure 4C at the same time.
第二”電層360與第四介電層370之位於預移除區L内合 部分，而形成一移除區L1，並且於第三介電層36〇上形^ 一開口 0,於第四介電層370上形成一開口 〇1，其中(毛 除第三與第四介電層360、370的方法包括剝除法（出 off)。在本實施例中，第三介電層36〇覆蓋部分第二雷身 阻擋結構350。在本實施例中，可於移除第三介電層％ 與第四介電層370之位於預移除區L _部分的同日曰 除保護層380。 :月參照圖3D ’在本實施例中’可以機械加工的方 移除第二雷射阻撞結構现之位於移除區u内的部分。 =外’亦可以機械加工的方式移除部分第—雷射阻撐結構 4照圖3D，，在其他實施例中，可以侧的方」 :鉍射阻擋結構350。由於蝕刻製程可完全移除彳 田、阻擋結構35〇 ’故钱刻製程會在第三介電層 10 M397681 二介電層330之間留下一橫向空槽R (原本是用以容納雷 射阻擋結構350之被第三介電層360所覆蓋的部分），橫 向工槽R位於移除區L1邊緣並與開口 〇、〇ι連通。此外， 亦可藉由蝕刻的方式移除第一雷射阻擋結構3 2 〇。 以下將就圖3C的線路板300的結構部分作詳細地介 紹。 請同時參照圖3C、圖4C、圖5與圖6，本實施例之 線路板300具有一移除區L1，移除區L1為一凹陷區域。 線路板300包括一第一介電層31〇、一第—雷射阻擋結構 320、一第二介電層330、一線路層340、一第二雷射阻擔 結構350以及一第三介電層360。 第一雷射阻檔結構320配置於第一介電層31 〇的一第 一表面312上，且位於移除區bl邊緣。第二介電層33〇 配置於第一介電層310上，並覆蓋第一雷射阻擋結構32〇。 線路層340配置於第二介電層33〇的一第二表面332上， 且部分線路層340由移除區L1外延伸進移除區u内。 在本實施例中’線路板300包括多個第三雷射阻擋結 構390 ’第三雷射阻擋結構39〇配置於第二表面332上並 位於移除區L1邊緣’第三雷射阻擋結構39()與線路層34〇 之位於移除區L1邊緣的部分相連’並與第二雷射阻擋結 構350絕緣。 第二雷射阻擋結構350配置於第二表面332上並位於 移除區L1邊緣’且第二雷射阻擋結構35〇與線路層34〇 系巴緣。第二雷射阻擋結構35〇與線路層340之間存在多個 M397681 間隙G，間隙G於第一表面312上的垂直投影與第一雷射 阻擋結構320重疊。 ^ ^ 為提升第一雷射阻擋結構320阻擋雷射加工的效果， 本實施例之第一雷射阻擋結構320的尺寸可大於間隙G在 第一表面312上的垂直投影面積，以使間隙〇在第一表面 312上的垂直投影可完全落在第一雷射阻擋結構32〇上。 . 另外，在本實施例中，第二介電層33〇可具有多個凹槽 334,且凹槽334位於間隙〇下方。凹槽334可暴露出第 、 一雷射阻擋結構320。 籲 具體而言，在本實施例中，第二雷射阻擋結構35()為 一環狀結構’環狀結構可具有多個缺口 B，且部分線路層 3j〇由缺口 b延伸進移除區内。此外，在本實施例中， 第一雷射阻擔結構320可為多個彼此獨立的點狀結構。在 其他實施例中，第一雷射阻擋結構32〇可為一條結構或 一環狀結構，且條狀結構或環狀結構可與第二雷射阻擋結 構350於第一表面312上的垂直投影重疊。 第二介電層360配置於第二介電層上，並具有對 鲁 應移除，L1的一開口 〇。在本實施例中，線路板3〇〇還 · 包括-第四介電層370 ’且第四介電層37〇配置於第三介 電層360上，並具有對應開口 〇的一開口 〇丨。開口 〇、 〇1暴露出'線路層340之位於移除區L1㈣部分以及第二 雷射阻擋結構350之位於移除區L1内的部分。此外，在 本實施射，可在移除區L1 _己置一保護層，，其覆蓋 線路層340之位於移除區L1内的部分，以保護開口 〇、 12 M397681 所暴露之線路層」〜 值得注意的是，本實施例是以一移除區L1為例，但 f非用以限定本創作。舉絲說，在其他树示的實施例 中’線路板亦可具有多個移除區，且這些移除區可選擇性 地位於線路板㈣—侧或者是線路板_對兩側。 -與;二：二:創=移除區的線路板具有第 構來控制_可利用第二雷射阻播結 構保L田射的深度。並且，可利用第一雷射阻播社 ;=第一介電層免於受到雷射加工 雖…、本創作已以實施例揭露如上，鈇1廿并田、 本創作，任何所屬領域中且 〜、並非用以限定 作之精神和範圍内，當可;，在不脫離本創 圍田視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 的線路板的製程侧 心至圖=圖基板的上視圖。 線路板的製程剖面圖圖4C為本創作一實施例之 層與第二 θ 6為圖3A至圖3c 田射阻擋結構的上視圖。 A至圖4C之基板的第— M397681 【主要元件符號說明】 100 :線路基板 110、310 :第一介電層 120、330 :第二介電層 130、340 :線路層 140、360 :第三介電層 320 ··第一雷射阻擋結構 332 :第二表面 350 :第二雷射阻擋結構 380 :保護層 390 :第三雷射阻擋結構 B :缺口 D :寬度 G :間隙 L:預移除區 L1 .移除區 150、370 :第四介電層 200 :晶片 300 :線路板 312 :第一表面 334、T :凹槽 0、ΟΙ :開口 P :線路板 S :基板 R:橫向空槽 14The second "electric layer 360" and the fourth dielectric layer 370 are located in the pre-removed area L, forming a removal area L1, and forming an opening 0 on the third dielectric layer 36, An opening 〇1 is formed on the four dielectric layers 370, wherein the method of removing the third and fourth dielectric layers 360, 370 includes stripping (off). In this embodiment, the third dielectric layer 36〇 A portion of the second barrier blocking structure 350 is covered. In this embodiment, the protective layer 380 may be removed on the same day as the third dielectric layer % and the fourth dielectric layer 370 are located on the pre-removed region L_ portion. : Month Referring to FIG. 3D 'In this embodiment, the portion that can be machined removes the portion of the second laser blocking structure that is now located in the removal zone u. The outer portion can also be mechanically removed. - Laser blocking structure 4 according to Figure 3D, in other embodiments, the side of the side can be: 铋 阻挡 阻挡 350 。 。 。 。 。 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 A lateral recess R is left between the third dielectric layer 10 M397681 and the second dielectric layer 330 (originally used to accommodate the laser blocking structure 350) The portion of the three-dielectric layer 360 is located at the edge of the removal region L1 and is in communication with the openings 〇, 〇. Further, the first laser blocking structure 3 2 can also be removed by etching. The structural part of the circuit board 300 of FIG. 3C will be described in detail below. Referring to FIG. 3C, FIG. 4C, FIG. 5 and FIG. 6, the circuit board 300 of this embodiment has a removal area L1 and a removal area. L1 is a recessed area. The circuit board 300 includes a first dielectric layer 31, a first laser blocking structure 320, a second dielectric layer 330, a circuit layer 340, and a second laser blocking structure 350. And a third dielectric layer 360. The first laser barrier structure 320 is disposed on a first surface 312 of the first dielectric layer 31 , and is located at an edge of the removal region bl. The second dielectric layer 33 is configured On the first dielectric layer 310, and covering the first laser blocking structure 32. The circuit layer 340 is disposed on a second surface 332 of the second dielectric layer 33, and a portion of the wiring layer 340 is removed from the region L1. Externally extending into the removal zone u. In the present embodiment, the 'circuit board 300 includes a plurality of third laser blocking structures 390' The blocking structure 39 is disposed on the second surface 332 and located at the edge of the removal region L1. The third laser blocking structure 39 is connected to the portion of the wiring layer 34 located at the edge of the removal region L1 and is coupled to the second laser. The blocking structure 350 is insulated. The second laser blocking structure 350 is disposed on the second surface 332 and located at the edge of the removal region L1 and the second laser blocking structure 35 is tied to the circuit layer 34. The second laser blocking There is a plurality of M397681 gaps G between the structure 35A and the circuit layer 340, and the vertical projection of the gap G on the first surface 312 overlaps with the first laser blocking structure 320. ^ ^ In order to improve the effect of the first laser blocking structure 320 blocking the laser processing, the size of the first laser blocking structure 320 of the embodiment may be larger than the vertical projected area of the gap G on the first surface 312, so that the gap 〇 The vertical projection on the first surface 312 can completely land on the first laser blocking structure 32A. In addition, in the present embodiment, the second dielectric layer 33A may have a plurality of grooves 334, and the grooves 334 are located below the gap 。. The recess 334 can expose the first, first laser blocking structure 320. Specifically, in the present embodiment, the second laser blocking structure 35 () is a ring structure, the ring structure may have a plurality of notches B, and a part of the circuit layer 3j is extended from the notch b into the removal area. Inside. In addition, in the embodiment, the first laser resistive structure 320 may be a plurality of dot structures independent of each other. In other embodiments, the first laser blocking structure 32 can be a structure or an annular structure, and the vertical projection of the strip or ring structure and the second laser blocking structure 350 on the first surface 312 overlapping. The second dielectric layer 360 is disposed on the second dielectric layer and has an opening 对 that should be removed, L1. In this embodiment, the circuit board 3 further includes a fourth dielectric layer 370 ′ and the fourth dielectric layer 37 〇 is disposed on the third dielectric layer 360 and has an opening corresponding to the opening 〇丨. The opening 〇, 〇 1 exposes a portion of the wiring layer 340 located in the removal region L1 (four) and a portion of the second laser blocking structure 350 located within the removal region L1. In addition, in the present embodiment, a protective layer may be disposed in the removal region L1_, which covers a portion of the wiring layer 340 located in the removal region L1 to protect the opening layer 12, 12 M397681 exposed circuit layer"~ It should be noted that this embodiment takes a removal area L1 as an example, but f is not used to define the creation. In other embodiments, the circuit board may also have a plurality of removal zones, and these removal zones may be selectively located on the circuit board (four) side or on the circuit board _ opposite sides. - and; two: two: the board of the creation = removal zone has a structure to control _ the depth of the L-field can be secured by the second laser blocking structure. Moreover, the first laser intercepting agency can be utilized; = the first dielectric layer is protected from laser processing... The present invention has been disclosed by way of example, 鈇1廿和田, 本造, in any field and ~, is not intended to be limited to the spirit and scope of the work, and is not subject to the definition of the scope of the patent application attached to this creation. [Simple diagram of the diagram] The process center of the board is shown in the figure = the top view of the board. Process section of the circuit board Fig. 4C is a top view of the layer and the second θ 6 of the embodiment of the present invention as the field blocking structure of Figs. 3A to 3c. A to M397681 of the substrate of FIG. 4C [Description of main component symbols] 100: circuit substrate 110, 310: first dielectric layer 120, 330: second dielectric layer 130, 340: circuit layer 140, 360: third Dielectric layer 320 ··first laser blocking structure 332 : second surface 350 : second laser blocking structure 380 : protective layer 390 : third laser blocking structure B : notch D : width G : gap L: pre-shift Division area L1. Removal area 150, 370: Fourth dielectric layer 200: Wafer 300: Circuit board 312: First surface 334, T: Groove 0, ΟΙ: Opening P: Circuit board S: Substrate R: Horizontal empty Slot 14