TWM394577U

TWM394577U - A light-emitting device having a light-extracting layer

Info

Publication number: TWM394577U
Application number: TW98225041U
Authority: TW
Inventors: Chia-Liang Hsu
Original assignee: Epistar Corp
Priority date: 2009-12-31
Filing date: 2009-12-31
Publication date: 2010-12-11

Abstract

A light-emitting device includes a substrate; a light-emitting stacked layer formed on the substrate, wherein the light-emitting stacked layer at least includes an active layer, a first patterned structure formed on the active layer, and a light-extracting layer formed on the first patterned structure, wherein the light-extracting layer includes a plurality of sublayers, wherein the refraction indices of the plurality of sublayers decrease along the direction away from where near the substrate.

Description

M394577 五、新型說明： ' , 7 on 【新型所屬之技術領域】 Λ 本新型侧於-發光元件，尤其關於一種具有光取出層的發光元件。【先前技術】、發光二極體（Light-emitting Diode ; LED係一種固態半導體元件’其至少包含_p-n接面（㈣娜枝加），此p n接面係形成於 ’ P型與n型半導體層之間。當於p-n接面上施加-定程度之偏壓時 9 P型半導體層中之電洞與n型半導體層中之電子會結合而釋放出光。此光產生之區域一般又稱為發光區（light_emittingregi〇n)。 LED的主要特徵在於尺寸小、發光效率高、壽命長、反應快速、可靠度高和色度良好，目前已經廣泛地使用在電器、汽車、招牌和交通麟上。P4著全彩LED _世，LED已逐漸取代照明設備，如榮光燈和白熱燈泡。然而因為LED與其所在環境之介質⑽如空氣)的折射率差異 • 較大’使LED所發之光料在LED與環境介_介面產生全反 ||. 射’使光被侷限在led内部，降低光摘出效率。上述發光一極體可進一步地以基板經由焊塊或膠材愈一基座連接，以形成一發光裝置。另外，基座更具有至少/一電路，經由一導電結構，例如金屬線，電連接發光裝置之電極。【新型内容】一發光元件包含一基板；一發光疊層形成於基板之上，其中發光疊層至少包含-活性層與-第一圖案結構形成於活 3 «94577 99. 7.3 0 =層之上；以及-光取出層形成於第—週期結構之上，士取出層包含複數個從屬層，其中複數個從屬層之折_ 罪近基板往遠離基板之方向遞減。 wM394577 V. New description: ' , 7 on [New technical field] Λ This new type is a light-emitting element, especially a light-emitting element having a light extraction layer. [Prior Art], a light-emitting diode (LED is a solid-state semiconductor device) which includes at least a _pn junction ((4) Nazhijia), which is formed in a 'P-type and an n-type semiconductor Between the layers, when a bias is applied to the pn junction, the holes in the 9 P-type semiconductor layer combine with the electrons in the n-type semiconductor layer to release light. The region in which the light is generated is also commonly referred to as Light-emitting area (light_emittingregi〇n) LED is mainly characterized by small size, high luminous efficiency, long life, fast response, high reliability and good chroma. It has been widely used in electrical appliances, automobiles, signboards and transportation. P4 is full-color LED _, LED has gradually replaced lighting equipment, such as glory and white heat bulbs. However, because of the difference in refractive index between the LED and its environment (10) such as air • larger 'the light emitted by the LED LED and environment _ interface produces all-reverse ||. Shoot 'to make light confined inside the led, reducing light extraction efficiency. The light-emitting body may be further connected to the substrate via a solder bump or a glue to form a light-emitting device. In addition, the pedestal further has at least / a circuit electrically connected to the electrodes of the illuminating device via a conductive structure, such as a metal wire. [New content] A light-emitting element comprises a substrate; a light-emitting layer is formed on the substrate, wherein the light-emitting layer comprises at least an active layer and a first pattern structure is formed on the live 3 «94577 99. 7.3 0 = layer And the light extraction layer is formed on the first periodic structure, and the extracting layer comprises a plurality of subordinate layers, wherein the plurality of subordinate layers are folded toward the substrate away from the substrate. w

當發光疊層所發之光自發光疊層射向所在環境之介質，由於發光Μ與介質之_折鱗差賤大，光科在發光疊層與介質之介面產生全反料侷限於發光疊㈣，導^光取出效率下降。純本案因為相鄰之發光疊層、複數個從屬層與介質之間的折射率彼此差異較小，光在相鄰兩層間之介面不易產生全反射’可經由複數個從屬層糊射向介質之中’提高光摘出效率。【實施方式】本新型之貫施例會被詳細地描述，並且繪製於圖式中同或類似的部分會以相同的號碼在各圖式以及說明出現。第一實施例如第1圖所示，一發光元件丨包含一基板1〇; —發光疊層12位於基板1〇之上，其中發光疊層12至少包含一活性層124 ;以及一光取出層14位於發光疊層12之上。基板10可為供發光疊層12成長用之成長基板，或利用黏結層(未顯示)接合之永久基板，用以支撐位於其上之發光疊層12與光取出層14。基板10其材料可為透明或絕緣材料，例如為電絕緣材料、藍寶石（Sapphire)、鑽石(Diamond)、玻璃(Giass)、聚合物(Polymer)、環氧樹脂（Epoxy)、石英(Quartz)、壓克力 (Acryl)、氧化鋅(ZnO)或氮化紹(A1N)等。基板10之材料亦可 4 M394577 為高散熱或反射材料，包含銅(Cu)、鋁(Al)、鉬(Mo)、銅-錫 (Cu-Sn)、銅-鋅(Cu-Zn)、銅-鎘(Cu-Cd)、鎳-錫(Ni-Sn)、鎳-鈷 (Ni-Co)、金合金(Au alloy)、類鑽碳薄膜(Diamond Like Carbon ; DLC)、石墨(Graphite)、碳化矽(SiC)、碳纖維、複合材料、金屬基複合材料(Metal Matrix Composite ; MMC)、陶竞基複合材料(Ceramic Matrix Composite ; CMC)、高分子基複合材料 (Polymer Matrix Composite ; PMC)、矽(Si)、磷化破(IP)、硒化When the light emitted by the light-emitting layer is emitted from the light-emitting layer to the medium of the environment, the difference between the light-emitting layer and the medium is large, and the light-emitting layer is totally confined to the light-emitting stack in the interface between the light-emitting layer and the medium. (4) The efficiency of the light extraction is reduced. In this case, because the adjacent light-emitting layers, the refractive indices between the plurality of sub-layers and the medium are less different from each other, the interface between the two adjacent layers is less likely to cause total reflection, which can be transmitted to the medium via a plurality of sub-layer pastes. Medium' to improve light extraction efficiency. [Embodiment] The present invention will be described in detail, and the same or similar parts will be described in the drawings in the drawings. In a first embodiment, as shown in FIG. 1, a light-emitting element 丨 includes a substrate 1 〇; a light-emitting layer 12 is disposed on the substrate 1 ,, wherein the light-emitting layer 12 includes at least one active layer 124; and a light extraction layer 14 Located above the light emitting stack 12. The substrate 10 may be a growth substrate for the growth of the light-emitting laminate 12, or a permanent substrate joined by a bonding layer (not shown) for supporting the light-emitting laminate 12 and the light extraction layer 14 thereon. The substrate 10 may be made of a transparent or insulating material, such as an electrically insulating material, sapphire, diamond, Gias, polymer, epoxy, quartz, and Quartz. Acrylic (Acryl), zinc oxide (ZnO) or nitriding (A1N). The material of the substrate 10 can also be 4 M394577 as a high heat dissipation or reflection material, including copper (Cu), aluminum (Al), molybdenum (Mo), copper-tin (Cu-Sn), copper-zinc (Cu-Zn), copper. -Cd-Cd, Ni-Sn, Ni-Co, Au alloy, Diamond Like Carbon (DLC), Graphite Tantalum carbide (SiC), carbon fiber, composite material, metal matrix composite (MMC), ceramic matrix composite (CMC), polymer matrix composite (PMC), niobium (Si) ), phosphating (IP), selenization

鋅(ZnSe)、砷化鎵(GaAs)、碳化矽(SiC)、磷化鎵(Gap)、磷砷化鎵(GaAsP)、硒化鋅(ZnSe)、磷化銦(InP)、鎵酸鋰(LiGa〇2) 或銘酸裡(LiA102)。發光4層12更包含-第一半導艘層122位於基板1〇與活性層124之間；以及-第二半導體層146 4立於活性層144與取出層14之間’其中第一半導體層142與、的電性相異:發_ 12包含―第—上表面Zinc (ZnSe), gallium arsenide (GaAs), tantalum carbide (SiC), gallium phosphide (Gap), gallium arsenide (GaAsP), zinc selenide (ZnSe), indium phosphide (InP), lithium gallate (LiGa〇2) or Mingji Li (LiA102). The light-emitting 4 layer 12 further includes a first semiconductor layer 122 between the substrate 1 and the active layer 124; and a second semiconductor layer 146 between the active layer 144 and the extraction layer 14 142 and , the electrical difference: hair _ 12 contains the "first" surface

半I26之上表面。第-上表面121係為-不規則結構。第-圖案結構具有複數個凸部與一 1 1係介於發光疊層12所發出之 ======= :異!=2等=^^ :銦⑽、卿)、_、叫编 5Half I26 above the surface. The first upper surface 121 is an irregular structure. The first-pattern structure has a plurality of convex portions and a pair of 1 1 systems are emitted by the light-emitting layer 12 =======: different!=2, etc. =^^: indium (10), qing), _, called 5

9b· V .. ^ J 屬層，其中構之上’更包含複數層從 ι〇之方向遞減。本實施率自靠近基板ι〇往雜基板第二從屬層⑷與第三^出層=含第^從屬層⑷、此，從屬層之數量亦可A146二層姻層糊，但不限於第二上表面⑷與發工三或」、於三。第一從屬層142之 d介於發光疊層12所^；=^^表面121之最短距離於0.6微米與7微平工Π波長又與10入之間，或可介從屬層144之折奸聿H一從屬層142之折射率η】、第二 3與^之間從屬層146之折射率_介於9b· V .. ^ J genus layer, where the structure above contains more complex layers from the direction of ι〇. The implementation rate is from the adjacent substrate ι to the second substrate (4) and the third layer = the second sub-layer (4), and the number of the sub-layers may also be A146 two-layer layer paste, but not limited to the second The upper surface (4) and the work three or ", three. The d of the first subordinate layer 142 is between the shortest distance of the surface of the light emitting layer 12; the surface 121 is between 0.6 micrometers and 7 microplanar wavelengths and 10 inches, or may be subdivided into the subordinate layer 144.折射率H a subordinate layer 142 refractive index η], the second 3 and ^ between the subordinate layer 146 refractive index _

光自發光義居3<η2<ηι<3。當發光叠層12所發之贪L,先^射向所在環境之介質，本實施例之介質以空声12内，工氣之介面產生全反射而侷限於發光疊 mm纽村降。為了避免發光麵12所發之從屬芦147 Μ -舆空氣之介面產生全反射’本實施例之第一 f—從屬層144與第三從屬層146之折射率自靠土板10往遠離基板10之方向逐漸降低。因為相鄰之發光 ^2與第-從屬層142;第一從屬層142與第二從屬層144; 從屬層Η4與第三從屬層⑷；以及第三從屬層Μ·6與空氣之間的折身f率彼此差異較小，光在相鄰兩層間之介面不易產生全反射，可經由第一從屬層142、第二從屬層144與第三從屬層146順利射向空氣之中’提高光摘出效率。光取出層14 =巧=可為導電或非導電材料，包含聚醯亞胺（polyimide)、苯并環丁烯（BCB)、過氟環丁烷（pfCB)、氧化鎂(Mg〇)、介電材料、Su8、環氧樹脂（Epoxy)、丙烯酸樹脂（Acrylic Resin )、環烯烴聚合物（C0C )、聚甲基丙烯酸甲酯（pMMA )、 t對本一甲酸乙二g旨（PET)、聚碳酸醋（PC)、聚醯亞胺 (Polyetherimide)、氟碳聚合物（Fluorocarbon P〇lymer)、石夕膠 (Silicone)、玻璃、氧化鋁(Al2〇3)、氧化矽(Si〇x)、氧化▲ (Ti〇2)、氮化矽(SiNx)、旋塗玻璃(SOG)、其他有機黏結材料、 6 M394577 四、指定代表圖： (一) 本案指定代表圖為：第（1 )圖。 (二) 本代表圖之元件符號簡單說明： 1:發光元件 10:基板 12:發光疊層 121:第一上表面 122:第一半導體層Light self-luminous residence 3<η2<ηι<3. When the light-emitting layer 12 is smothered, it is first directed to the medium of the environment. The medium of the embodiment is totally reflected in the air 12, and the interface of the working gas is limited to the light-emitting stack. In order to avoid total reflection from the interface of the slave 147 舆-舆 air emitted by the light-emitting surface 12, the refractive index of the first f-subordinate layer 144 and the third sub-layer 146 of the present embodiment is away from the substrate 10 from the substrate 10 The direction is gradually reduced. Because of the adjacent light-emitting layer ^2 and the first-subordinate layer 142; the first sub-layer 142 and the second sub-layer 144; the sub-layer 4 and the third sub-layer (4); and the third sub-layer Μ6 and the air between the fold The f-rates are less different from each other, and the interface between the two adjacent layers is less likely to cause total reflection, and can be smoothly shot into the air via the first sub-layer 142, the second sub-layer 144, and the third sub-layer 146. effectiveness. Light extraction layer 14 = Q = can be a conductive or non-conductive material, including polyimide, benzocyclobutene (BCB), perfluorocyclobutane (pfCB), magnesium oxide (Mg 〇), Electrical materials, Su8, epoxy resin (Epoxy), acrylic resin (Acrylic Resin), cycloolefin polymer (C0C), polymethyl methacrylate (pMMA), t to the original formic acid ethylene glycol (PET), poly Carbonic acid vinegar (PC), Polyetherimide, Fluorocarbon P〇lymer, Silicone, Glass, Alumina (Al2〇3), Cerium oxide (Si〇x), Oxidation ▲ (Ti〇2), tantalum nitride (SiNx), spin-on glass (SOG), other organic bonding materials, 6 M394577 IV. Designated representative drawings: (1) The representative representative of the case is: (1). (2) A brief description of the component symbols of the representative diagram: 1: Light-emitting element 10: Substrate 12: Light-emitting laminate 121: First upper surface 122: First semiconductor layer

124 :活性層 126:第二半導體層 14:光取出層 141:第二上表面 142:第一從屬層 144:第二從屬層 146:第三從屬層 A、A’:凸部幾何中心點 P!:第一間距 M394577 舞. :',p_ J化銦錫_、氧化錮(In0)、氧化錫、 r7U^AT〇)、氧化辞鋁(AZ0)、氧化鋅錫(2T0)、氧化鋅 i^、骑他(A1GaAS)、氮倾(GaN)、舰鎵(GaP)、砷一化鱗㈣、氧化夠 Μ第ίΓίϋ如第2圖所示，與第—實施例類似，差異在於 ft件1心一光取出層24形成於第-上表面121之上，具有第1屬層242、第二從屬層244與第二242、第二從屬層244與第三從屬請: 此，從屬層之數量亦可為大於三或7 t凸構包含複數個凸部與凹部，其中第二圖案、i 位於第1_ί構之上，第二圖案結構之凹部124: active layer 126: second semiconductor layer 14: light extraction layer 141: second upper surface 142: first subordinate layer 144: second subordinate layer 146: third subordinate layer A, A': convex geometric center point P !:The first pitch M394577 dance. :', p_ J indium tin _, yttrium oxide (In0), tin oxide, r7U^AT〇), oxidized aluminum (AZ0), zinc tin oxide (2T0), zinc oxide i ^, riding him (A1GaAS), nitrogen tilting (GaN), gallium (GaP), arsenic scale (four), oxidation enough, as shown in Figure 2, similar to the first embodiment, the difference is in the ft 1 A light-extracting layer 24 is formed on the first upper surface 121, and has a first genus layer 242, a second subordinate layer 244 and a second 242, a second subordinate layer 244, and a third subordinate: Please, the number of subordinate layers The convex structure may be a plurality of convex portions and concave portions greater than three or 7 t, wherein the second pattern, i is located above the first structure, and the concave portion of the second pattern structure

二二之間上;:r約°.6麵7微以,¾ J 最短距離d介於發光叠層以；^2之第一上表面⑵之間，或可介於約〇.6微米與7微/之出先之波長λ與叫之 2'準週期結構、ΐ二=構第第週‘ 上。 —ΰ案、、，。構之凹部位於第一圖案結構之凹部= 7 第4圖係繪示出一光源產生裝置示^ 一^^裝置 4包含本新型任一實施例中之發光元件。光源產生裝置4可以疋一照明裝置，例如路燈、車燈或室内照明光源，也可以是交通號誌或一平面顯示器中背光模組的一背光光源。光源產生裝置4包含則述發光元件組成之一光源41、一電源供應系統以供應光源41 -電流、以及―控制元件43，肋控制電源供應系統42。 • f 5圖係繪示出一背光模組剖面示意圖，一背光模組$ 2含前述實施例中的光源產生裝置4，以及一光學元件51。光予元件51可將由光源產生裝置4發出的光加以處理，以應用於平面顯示H，例如散射絲產生裝置4發出的光。惟上述實施例僅為浙性本新型之原理及其功效而 ^用於限制本新型。任何本新型所屬技術領域巾具有通常知識者均可在不射搞敎技術顧及精相航下，斜上械音Between two and two;: r about °. 6 faces 7 micro, 3⁄4 J The shortest distance d is between the light emitting laminate; ^2 between the first upper surface (2), or may be between about 〇.6 microns and The 7 micro/previous wavelength λ is called the 2' quasi-periodic structure, and the second is the first week. —ΰ,,,,. The concave portion of the structure is located in the concave portion of the first pattern structure = 7 Fig. 4 is a diagram showing a light source generating device. The device 4 includes the light emitting element of any of the embodiments of the present invention. The light source generating device 4 may be a lighting device such as a street lamp, a lamp or an indoor lighting source, or a backlight source of a backlight module in a traffic signal or a flat display. The light source generating device 4 includes a light source 41 composed of a light-emitting element, a power supply system for supplying a light source 41 - current, and a "control element 43" for controlling the power supply system 42. • The f 5 diagram shows a schematic cross-sectional view of a backlight module. A backlight module $ 2 includes the light source generating device 4 of the foregoing embodiment, and an optical element 51. The light-emitting element 51 can process the light emitted by the light source generating means 4 to be applied to the flat display H, such as the light emitted by the scattered-wire generating means 4. However, the above embodiments are only used to limit the present invention to the principle and function of the novel. Any one of the technical fields of the present invention has the usual knowledge that the machine can be slanted by the technique without taking care of the technique.

【圖式簡單說明】圖式用以促進對本新型之理解[Simple description of the schema] The schema is used to promote understanding of the novel

第4圖係為示意Figure 4 is a schematic

第1圖係依據本新叙第—實施例之剖面圖。第2圖係依據本_之第二實施例之剖面圖。第3圖係依據本新型之第三實油第4圖係為示意 M394577 之一光源產生裝置之示意圖。一一二：第5圖係為示意圖，顯示利用本新型實施例所組成之一背光模組之示意圖。 Γ 【主要元件符號說明】 M394577Figure 1 is a cross-sectional view of the present embodiment. Figure 2 is a cross-sectional view of a second embodiment of the present invention. Fig. 3 is a third solid oil according to the present invention. Fig. 4 is a schematic view showing a light source generating device of M394577. One-two: Figure 5 is a schematic diagram showing a schematic diagram of a backlight module constructed using the novel embodiment. Γ [Main component symbol description] M394577

1:發光元件 10:基板 12:發光疊層 121:第一上表面 122:第一半導體層 124:活性層 126:第二半導體層 14、24、34:光取出層 14卜241:第二上表面 142、242、342:第一從屬層 144、244、344:第二從屬層 146、246、346:第三從屬層 4:光源產生裝置 41:光源 42:電源供應糸統 43:控制元件 5:背光模組 51:光學元件 A、A’、B、B’:凸部幾何中心點 Pi:第一間距 P2:第二間距1: Light-emitting element 10: Substrate 12: Light-emitting laminate 121: First upper surface 122: First semiconductor layer 124: Active layer 126: Second semiconductor layer 14, 24, 34: Light-extracting layer 14 241: Second upper Surfaces 142, 242, 342: first slave layer 144, 244, 344: second slave layer 146, 246, 346: third slave layer 4: light source generating device 41: light source 42: power supply system 43: control element 5 : backlight module 51: optical element A, A', B, B': convex geometric center point Pi: first pitch P2: second pitch

1010

Claims

M394577 六、申請專利範圍： $ )曰補 r， jxir 1. 一發光元件，包含： _ --11 一基板； ‘ 一發光疊層形成於該基板之上，其中該發光疊層至少包含一活性層與一第一圖案結構形成於該活性層之上；以及一光取出層开> 成於該發光疊層之上，其中該光取出層包含複數個從屬層，該複數個從屬層之折射率自靠近該基板往遠離該基板之方向遞減。M394577 VI. Patent application scope: $ ) 曰 r r, jxir 1. A light-emitting element comprising: _ --11 a substrate; 'a light-emitting layer formed on the substrate, wherein the light-emitting layer comprises at least one active a layer and a first pattern structure are formed on the active layer; and a light extraction layer is formed on the light-emitting layer, wherein the light extraction layer comprises a plurality of sub-layers, and the plurality of sub-layers are refraction The rate decreases from the substrate toward the substrate.

2. 如請求項1所述之發光元件，其中該基板之材料包含一種或一種以上之物質選自電絕緣材料、藍寶石（Sapphire)、鑽石 (Diamond)、玻璃(Glass)、聚合物(P〇lymer)、環氧樹脂（Ep〇xy )、石英(Quartz)、壓克力(Acryl)、氧化鋅(Ζη〇)與氮化鋁(A1N)所構成之群組。 3. 如請求項1所述之發光元件，其中該基板之材料包含一種或一種以上之物質選自銅(Cu)、鋁(A1)、鉬(Mo)、銅-錫(Cu-Sn)、銅 -鋅(Cu-Zn)、銅-鑛(Cu-Cd)、錄-錫(Ni-Sn)、鎳-錄(Ni_c〇)、金合金(Au alloy)、類鑽碳薄膜(Diamond Like Carbon ; DLC)、石墨 (Graphite)、碳化矽(SiC)、碳纖維、複合材料、金屬基複合材料 (Metal Matrix Composite ; MMC)、陶瓷基複合材料(ceramic Matrix Composite，CMC) ' 南分子基複合材料(p〇iymei· Matrix Composite ; PMC)、矽(Si)、磷化碘(IP)、硒化鋅(ZnSe)、砷化鎵(GaAs)、碳化矽(SiC)、磷化鎵(GaP)、填砷化鎵(GaAsP)、牺化鋅(ZnSe)、碳化銦(InP)、鎵酸裡(LiGa02)與鋁酸鐘(LiA102) 所構成之群組。 4. 如請求項1所述之發光元件，其中該發光疊層更包含： M394577 一第一半導體層，位於該基板與該活性層之間；以及一第二半導體層，位於該活性層與該光取出層之間。 5. 如請求項1所述之發光元件，其中該發光疊層之材料包含一種以上之物質選自鎵(Ga)、鋁(A1)'銦(In)、磷(p)、氮、鋅、鎘(Cd)與硒(Se)所構成之群組。 6. 如請求項1所述之發光元件，其中該第一圖案結構包含複數個凸部，其中任二相鄰之該第一圖案結構之複數個凸部之幾何中心點之間距介於約0.6微米與7微米之間。 7. 如請求項1所述之發光元件，其中該複數個從屬層之折射率介於1與3之間。 8·如請求項1所述之發光元件，其中該光取出層之材料包含一種或一種以上之物質選自聚酸亞胺、苯并環丁婦 (BCB )、過氟環丁烷（PFCB )、氧化鎂(Mg〇)、介電材料、、 %氧树月曰（Epoxy)、丙稀酸樹脂（AcrylicResin)、環烤煙聚合物（C0C)、聚甲基丙烯酸甲酯、聚對苯二甲酸乙二醋（PET)、聚碳酸酯（pc)、聚醚醯亞胺（Polyetherimide)、2. The light-emitting element according to claim 1, wherein the material of the substrate comprises one or more substances selected from the group consisting of electrically insulating materials, sapphire, diamond, glass, and polymer (P〇). Group of lymer), epoxy resin (Ep〇xy), quartz (Quartz), acrylic (Acryl), zinc oxide (Ζη〇) and aluminum nitride (A1N). 3. The light-emitting element according to claim 1, wherein the material of the substrate comprises one or more substances selected from the group consisting of copper (Cu), aluminum (A1), molybdenum (Mo), and copper-tin (Cu-Sn). Cu-Zn, Cu-Cd, Ni-Sn, Ni-c〇, Au alloy, diamond-like carbon ; DLC), Graphite, SiC, Carbon Fiber, Composites, Metal Matrix Composite (MMC), Ceramic Matrix Composite (CMC) 'South Molecular Matrix Composites' P〇iymei· Matrix Composite ; PMC), bismuth (Si), phosphide iodine (IP), zinc selenide (ZnSe), gallium arsenide (GaAs), tantalum carbide (SiC), gallium phosphide (GaP), filling A group consisting of gallium arsenide (GaAsP), sacrificial zinc (ZnSe), indium carbide (InP), gallic acid (LiGa02), and alumina clock (LiA102). 4. The light-emitting element of claim 1, wherein the light-emitting layer further comprises: M394577 a first semiconductor layer between the substrate and the active layer; and a second semiconductor layer on the active layer and the Light is taken between the layers. 5. The light-emitting element of claim 1, wherein the material of the light-emitting layer comprises more than one substance selected from the group consisting of gallium (Ga), aluminum (Al), indium (In), phosphorus (p), nitrogen, zinc, A group of cadmium (Cd) and selenium (Se). 6. The illuminating element of claim 1, wherein the first pattern structure comprises a plurality of protrusions, wherein a geometric center point of the plurality of protrusions of any two adjacent first pattern structures is between about 0.6 Between microns and 7 microns. 7. The illuminating element of claim 1, wherein the plurality of subordinate layers have a refractive index between 1 and 3. The light-emitting element according to claim 1, wherein the material of the light extraction layer comprises one or more substances selected from the group consisting of polyimines, benzocyclobutene (BCB), and perfluorocyclobutane (PFCB). , Magnesium Oxide (Mg〇), Dielectric Materials, Epoxy Epoxy, Acrylic Resin, Circumfluend Tobacco Polymer (C0C), Polymethyl Methacrylate, Polyterephthalic Acid Ethylene vinegar (PET), polycarbonate (pc), polyetherimide (Polyetherimide),

氟碳聚合物（FluorocarbonPolymer)、矽膠（Silicone)、玻璃、乳化!呂(A1203)、氧化石夕(Si〇2)、氧化鈦(Ti〇2)、氮化石夕(siNx)、旋塗玻璃(S0G)、其他有機黏結材料、氧化銦錫(IT〇)、氧化铜 (InO)、氧化錫(Sn〇)、氧化鎘錫(CT0)、氧化錄錫(ΑΤ〇)、氧化鋅鋁(ΑΖΟ)、氧化鋅錫(ΖΤΟ)、氧化鋅(ζη〇)、砷鎵化鋁 (AlGaAs)、氮化鎵(GaN)、磷化鎵(GaP)、砷化鎵(GaAs)與磷化鎵神(GaAsP)所構成之群組。 9·如請求項1所述之發光元件，其中該第一圖案結構包含一圖案選自週期結構、準週期結構與不規則結構所構成之群組。 10·如請求項1所述之發光元件，其中該光取出層更包含一第二圖 12 M394577 Lb, 案結構形成於該第一圖案結構之上。 … 荦述之發光①件’其中該第二_結構包含一圖 u =構、準週期結構與不規則結構所構成之群組。】2.如明求項K)所述之發光元件，其十個凸部與凹部，料任1 _、，σ構包3複數之幾ϋ ^相第二®餘叙複數個凸部之切t心點之間距介於約α6微米與7微米之間。 :二=〇所述之發光元件’其中該第-圖案結構與該第二 ^構为別包含複數個凸部與凹部，該第二圖案結構之複數指於該第—圖案結構之複數個凹部之上且該第二圖案結構之複數個凹部位於該第-圖龍構之複數個凸部之上。 14. 如請求項1G所述之發光元件，其中該第—贿結構與該第二圖案、、、°構分別包含複數個凸部與凹部，該第二圖案結構之複數個凸部位於該第一圖案結構之複數個凸部之上且該第二圖案結構之複數個凹部位於該第一圖案結構之複數個凹部之上。 15. 如請求項1所述之發光元件，其中該發光疊層包含一第一上表面與該光取出層靠近該基板之從屬層包含一第二上表面，其中該弟上表面與該第二上表面之最短距離介於約〇.6微米與7 微米之間。、 13Fluorocarbon Polymer, Silicone, Glass, Emulsified! Lu (A1203), Oxidized Stone (Si〇2), Titanium Dioxide (Ti〇2), Nitride Xi (XNx), Spin-Coated Glass ( S0G), other organic bonding materials, indium tin oxide (IT〇), copper oxide (InO), tin oxide (Sn〇), cadmium tin oxide (CT0), oxidation recorded tin (ΑΤ〇), zinc oxide aluminum (ΑΖΟ) , zinc tin oxide (ΖΤΟ), zinc oxide (ζη〇), aluminum gallium arsenide (AlGaAs), gallium nitride (GaN), gallium phosphide (GaP), gallium arsenide (GaAs) and gallium phosphide (GaAsP) ) the group formed. 9. The light-emitting element of claim 1, wherein the first pattern structure comprises a pattern selected from the group consisting of a periodic structure, a quasi-periodic structure, and an irregular structure. The light-emitting element of claim 1, wherein the light extraction layer further comprises a second image of FIG. 12 M 394 577 Lb, and the structure is formed on the first pattern structure. ... illuminating a piece of light ‘where the second _ structure comprises a group u = a group of a quasi-periodic structure and an irregular structure. 2. The light-emitting element according to the item K), wherein the ten convex portions and the concave portion are made of 1 _, σ, and the σ structure is a plurality of ϋ ^ phase, the second, the second, and the plurality of convex portions are cut. The distance between the t-points is between about α6 μm and 7 μm. The light-emitting element of the second aspect, wherein the first-pattern structure and the second structure comprise a plurality of convex portions and concave portions, and the plurality of second pattern structures refers to the plurality of concave portions of the first pattern structure. And a plurality of concave portions of the second pattern structure are located above the plurality of convex portions of the first-shaped dragon structure. 14. The illuminating element according to claim 1 , wherein the first bribe structure and the second pattern, the θ structure respectively comprise a plurality of convex portions and concave portions, and the plurality of convex portions of the second pattern structure are located at the first A plurality of recesses of a pattern structure and a plurality of recesses of the second pattern structure are located over a plurality of recesses of the first pattern structure. 15. The illuminating element of claim 1, wherein the illuminating layer comprises a first upper surface and the light extraction layer is adjacent to the substrate, the subordinate layer comprises a second upper surface, wherein the upper surface and the second surface The shortest distance to the upper surface is between about 微米6 μm and 7 μm. , 13