M383897 五、新型說明： 【新型所屬之技術領域】 本創作係有關一種雷射裝置，特別是用於雙層導電膜面板曲線製 程之雷射裝置。 【先前技術】 ΠΌ (銦錫氧化物）已廣泛用於觸控面板中導電薄膜之材料，電容 式觸控面板在玻璃基板二面均鍍有IT0導電薄膜，並將之钱刻為特殊 設計之圖案，用以形成均勻電場，當手指或觸碰筆接觸觸控面板時， 藉由電場強度之改變而推知觸碰位置。 目前具雙層ΙΤΟ導電膜之面板其ΙΤ〇線路均以黃光製程（或可稱 為濕製程）侧’難蝴液有污雜，製程中需再處理廢液，且製 程設備昂貴，為降低環境污染及生產成本，採用雷射之乾製程是良好 的解決之道’雷射乾製程相較於難程具有簡易、储雑及低成本 等優點。然❿，現有雷射加工製程於.ΙΤΟ 4電薄膜所產生之熱效應會 影響雙層ΠΌ的製程，無法單純做好一面ΙΤ〇導電薄膜之線路而不影 響到另一面，因此雙層ΙΤΟ線路製程仍以黃光製程為主。 综上所述，如能提出可直接以雷射加卫具雙層導電薄膜面板之製 程’並避免補兩層ΙΤ0之線路，將可改善目前濕製程之污染性、高 成本與步驟繁瑣等缺點。 【新型内容】 有鑑於此’本創作之主要目的在於提出一種用於雙層導電膜面板 曲線製程之雷射裝置，用以加工具雙層導電膜之面板，以電聚侧方 3 M383897 式製作導電膜之線路，可提供低污染、有效率之雙層導電膜曲線電路 製程。 本創作提出之雷射裝置包含雷射模組、γ轴運動平台、X軸運動平 台及線性馬達，用以加工一面板，面板包含第一導電膜、第二導電膜 及介於第一導電膜與第二導電膜間之基板，第一導電膜位於雷射裝置 與基板之間。雷射模組包含雷射光源、監控單元及光束運動單元，雷 射光源用以產生可調波長之第一雷射光束，監控單元用以接收並校正 第一雷射光束後輸出第二雷射光束，光束運動單元接收並偏移第二雷 射光束’用以輸出第三雷射光束，使第三雷射光束沿平行於第—導電 膜表面之一X軸方向加工第一導電膜。γ軸運動平台承載雷射模組， 用以沿正交於X軸方向並平行於導電膜表面之Y轴方向移動雷射模 組’第三雷射光束沿X軸方向運動同時向Y轴方向運動，以電漿蝕刻 方式加工第一導電膜形成曲線而不影響第二導電膜，X轴運動平台承 載面板，用以於第一導電膜形成曲線後沿X軸方向移動面板，利於完 成其餘曲線製程’線性馬達連接於雷射模組，用以調整雷射模組沿垂 直於面板表面之Z轴方向調整雷射模組之位置。 有關本創作之較佳實施例及其功效，茲配合圖示說明如後。 【實施方式】 以下舉出具體實施例以詳細說明本創作之内容，並以圖示作為辅 助說明。說明中提及之符號係參照圖示符號。 請參閱第1圖及第2圖，係為本創作之示意圖。本創作提出之雷 射裝置包含雷射模組1〇、γ軸運動平台2〇、χ軸運動平台22及線性馬 4 M383897 達30，用以加工面板40，面板40包含第一導電膜42、第二導電膜46 及介於第一導電膜42與第二導電膜46間之基板44，笫一導電膜位42 於雷射裝置與基板44之間。 於此，第一導電膜42與第二導電膜46之材質可為ΙΊΌ(銦錫氧化 物）；基板44之材質可為玻璃或PET (聚乙烯對苯二甲酸酯）。 雷射模組10包含雷射光源12、監控單元14及光束運動單元16， 雷射光源12用以產生可調波長之第一雷射光束50 ,監控單元14接收 第一雷射光束50 ’並調整第一雷射光束50之波長、光形、光斑大小等 光參數後輸出第二雷射光束51，使可達到蝕刻第一導電膜42而不傷害 第一導電膜46之需求。光束運動單元16接收並偏移第二雷射光束51， 用以輸出第三雷射光束52，使第三雷射光束52沿平行於第一導電膜 42表面之X軸方向加工第一導電膜42。 Y轴運動平台20承載雷射模組1〇與線性馬達3〇，用以沿正交於 X轴方向並平行於第-導電膜42表面之γ轴方向移動雷射模組ι〇，使 第二雷射光束52沿X轴方向加卫第—導電膜42(g]時向γ轴方向運動， 以電漿_方式加卫位於上方之第—導電族42形成曲線圖案48(如第 3圖所示）。X抽運動平台22承载面板4〇，用以於第-導電膜42形成 -曲線圖案48後沿X轴方向移動4〇面板至另一待刻劃圖案之位置， 使可繼續其餘曲賴程。_馬達Μ連接於#射她Μ與Y轴運動 平台洲，用以沿正交於又轴方向與¥轴方向之⑽向移動雷射 模組ίο ’藉u調整第三雷射光束52聚焦光斑位置，肋準確調整第三 雷射光束52之聚焦高度。 一 5 M383897 於此，雷射光源12產生之第一雷射光束50實質上為可調波長之 二氧化碳雷射，其波長範圍為9.2um〜10.6um，可選擇對面板40之基板 44吸收率佳之波長，使第三雷射光束52加工面板4〇之第一導電膜42 後進入面板40之基材44而被吸收，免於傷害第二導電膜46。又，雷 射光源12產生之第一雷射光束50之功率可大於1500W，因此可合乎 量產之需求。 監控單元14包含雷射光閘141、第一分光鏡142、光譜儀143、雷 射功率衰減器144、第二分光鏡145、光功率計146、第一光曲路器H7、 光束整形器148、準直擴束器149、第二光曲路器15〇、第三分光鏡ι51、 第三光曲路器152及光束輪廓分析儀153。雷射光閘141接收第一雷射 光束50’使第一雷射光束50於電源開啟時通過雷射光閘141至第一分 光鏡142 ’第一分光鏡142分光第一雷射光束50為90度角偏移之第一 反射光束53及與原行進方向相同之第一橫向偏移光束54。光譜儀143 接收第一橫向偏移光束54並分析其光譜，雷射功率衰減器ι44接收第 一反射光束53並控制其功率後輸出至第二分光鏡145,第二分光鏡145 分光第一反射光束53為90度角偏移之第二反射光束55及與原行進方 向相同之第二橫向偏移光束56。光功率計146接收第二反射光束55並 分析其功率，第一光曲路器147接收第二橫向偏移光束56並將之9〇 度位移至光束整形器148’光束整形器148接收第二橫向偏移光束56， 用以將第二橫向偏移光束56之高斯能量分佈轉為平頂式（t〇p_flat)能 量分佈後輸出。準直擴束器149接收經光束整形器148之第二橫向偏 移光束56，並校準其行進方向及直徑後輸出至第二光曲路器15〇，第 6 M383897 光曲路器150將第—橫向偏移光束％位移卯度至第三分光鏡⑸， 第三分光鏡151分光第二橫向偏移光束兄為90度角偏移之第二雷射 光束51及與原行進方向相同之第三橫向偏移光束57 。第三光曲路器 152接收第三橫向偏移光束57並將之9〇度位移至光束輪廊分析儀 153，光束輪廓分析儀153用以分析第三橫向偏移光束57之光形，並 提供即時的光參數上下限·作為品質管控，當光參數超出範園時發 出警告’錄出光的品質剌;^控並可對於雷射加工設定之參數提出 記錄與更正警訊。 於此’監控單7C 14外圍有-遮蔽護罩18包覆，用以防止雷射或 其他輻射線外露傷害人體。 光束運動料16 &含触視覺做⑹、掃啸鏡162及遠心鏡 頭163。對位視覺模、组161接收監控單元14輸出之第二雷射光束51， 用以觀測並辅助定位第三雷射光束52輸出之位置，掃睡振鏡162連接 於對位視覺模、组161 ’用以偏移第二雷射光束51，輸出第三雷射光束 52 ’使第三雷射光52沿χ軸方向加卫第__導電膜42 ^遠心、鏡頭ι63 連接於掃ig振鏡162 ’用以無失真地觀看第三雷射光束52及面板4〇。 於此’本創作提出之雷射裝置更包含主機6〇與顯示器62。主機 60及顯不器62連結於對位視覺模組161，用以判別及顯示對位視覺模 組161摘取到之畫面。 综上所述，本創作將可調波長之二氧化碳雷射調整至適於面板4〇 之玻璃或PET材質之基板44吸收之波長’ g&合調配M2、光形、極化 性、光斑大小等光參數，並配合適宜之聚焦高度與能量，而產生電漿 7 M383897 去除能力以完成第一導電膜42之曲線製程，並可即時監控光參數與品 質，免於傷害第二導電膜46，確實可對具雙層導電膜之面板製作所欲 蝕刻之曲線’而取代傳統濕製程。 雖然本創作的技術内容已經以較佳實施例揭露如上，然其並非用 以限定本創作，任何熟習此技藝者，在不脫離本創作之精神所作些許 之更動與潤飾蓋縣創作的範細，目此本創作之保護範圍 當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 第1圖為本創作之示意圖。 第2圖本創作雷射模組之方塊圖。 第3圖於面板刻劃曲線之示意圖。 【主要元件符號說明】 10 ·雷射模組 12 :雷射光源 14 :監控單元 148 :光束整形器 H9 :準直擴束器 150 :第二光曲路器 152 :第三光曲路器 141 :雷射光閘 142 :第一分光鏡 151 :第三分光鏡 143 :光譜儀 153 :光束輪廓分析儀 144 :雷射功率衰減器 145 .第二分光鏡 146 :光功率計 147 :第一光曲路器 16 :光束運動單元 161 :對位視覺模組 162 :掃瞄振鏡 163 :遠心鏡頭 M383897 18 :遮蔽護罩 20 : Y轴運動平台 22 : X轴運動平台 30 :線性馬達 40 :面板 42 :第一導電膜 44 :基板 46 :第二導電膜 48 :曲線圖案 50 :第一雷射光東 51 :第二雷射光束 52 :第三雷射光束 53 :第一反射光束 54:第一橫向偏移光束 55 :第二反射光束 56 :第二橫向偏移光束 57 :第三橫向偏移光束 60 ··主機 62 :顯示器 X:X軸方向 Y:Y軸方向 Z:Z轴方向M383897 V. New description: [New technical field] This creation is related to a laser device, especially a laser device for the double-layer conductive film panel curve process. [Prior Art] ΠΌ (Indium Tin Oxide) has been widely used as a material for conductive films in touch panels. Capacitive touch panels are coated with IT0 conductive film on both sides of the glass substrate, and the money is specially designed. The pattern is used to form a uniform electric field, and when the finger or the touch pen touches the touch panel, the touch position is inferred by the change of the electric field strength. At present, the panel with double-layer ΙΤΟ conductive film has a yellow light process (or can be called a wet process), and the side of the process is dirty, the waste liquid needs to be processed again in the process, and the process equipment is expensive, so as to reduce Environmental pollution and production costs, the use of laser dry process is a good solution. 'Laser dry process has the advantages of simplicity, storage and low cost compared to the difficult process. Then, the thermal effect of the existing laser processing process on the ΙΤΟ 4 electric film affects the process of the double bismuth film, and the circuit of the bismuth conductive film cannot be simply performed without affecting the other side, so the double layer ΙΤΟ line process Still based on the yellow light process. In summary, if you can propose a process that can directly add a double-layer conductive film panel to the laser and avoid the two-layer ΙΤ0 line, it will improve the pollution, high cost and cumbersome steps of the current wet process. . [New content] In view of this, the main purpose of this creation is to propose a laser device for the double-layer conductive film panel curve process, which is used to add a double-layer conductive film panel, and is made by the electric side 3 M383897. The circuit of the conductive film can provide a low-pollution and efficient double-layer conductive film curve circuit process. The laser device proposed by the present invention comprises a laser module, a γ-axis motion platform, an X-axis motion platform and a linear motor for processing a panel, wherein the panel comprises a first conductive film, a second conductive film and a first conductive film The substrate between the second conductive film and the first conductive film is located between the laser device and the substrate. The laser module comprises a laser light source, a monitoring unit and a beam moving unit, the laser light source is used to generate a first laser beam of adjustable wavelength, and the monitoring unit is configured to receive and correct the first laser beam and output a second laser beam. The beam, the beam moving unit receives and shifts the second laser beam 'for outputting the third laser beam, and processing the first conductive film along the X-axis direction parallel to one of the surfaces of the first conductive film. The γ-axis motion platform carries a laser module for moving the laser module along a Y-axis direction orthogonal to the X-axis direction and parallel to the surface of the conductive film. The third laser beam moves in the X-axis direction while moving in the Y-axis direction. Movement, processing the first conductive film to form a curve by plasma etching without affecting the second conductive film, and the X-axis moving platform carrying panel is used to move the panel along the X-axis direction after the first conductive film forms a curve, which is beneficial to complete the remaining curves. The process 'linear motor is connected to the laser module to adjust the position of the laser module to adjust the laser module along the Z-axis perpendicular to the surface of the panel. The preferred embodiment of the present invention and its effects are described below with reference to the drawings. [Embodiment] The specific embodiments are described below in order to explain the contents of the present invention in detail, and are illustrated by the accompanying drawings. The symbols mentioned in the description are referred to the pictograms. Please refer to Figure 1 and Figure 2 for a schematic diagram of this creation. The laser device proposed by the present invention comprises a laser module 1 〇, a γ-axis motion platform 2 〇, a χ-axis motion platform 22 and a linear horse 4 M383897 up to 30 for processing the panel 40, the panel 40 comprising a first conductive film 42 The second conductive film 46 and the substrate 44 between the first conductive film 42 and the second conductive film 46 are disposed between the laser device and the substrate 44. Herein, the material of the first conductive film 42 and the second conductive film 46 may be bismuth (indium tin oxide); the material of the substrate 44 may be glass or PET (polyethylene terephthalate). The laser module 10 includes a laser source 12, a monitoring unit 14 and a beam moving unit 16, the laser source 12 is used to generate a first laser beam 50 of adjustable wavelength, and the monitoring unit 14 receives the first laser beam 50' and The second laser beam 51 is output after adjusting the optical parameters such as the wavelength, the light shape, and the spot size of the first laser beam 50, so that the requirement of etching the first conductive film 42 without damaging the first conductive film 46 can be achieved. The beam moving unit 16 receives and shifts the second laser beam 51 for outputting the third laser beam 52 to process the first conductive film 52 along the X-axis direction parallel to the surface of the first conductive film 42. 42. The Y-axis motion platform 20 carries a laser module 1〇 and a linear motor 3〇 for moving the laser module ι in a γ-axis direction orthogonal to the X-axis direction and parallel to the surface of the first conductive film 42. The two laser beams 52 move in the direction of the γ-axis when the first conductive film 42 (g) is applied along the X-axis direction, and the first conductive group 42 located above is formed in a plasma manner to form a curved pattern 48 (as shown in FIG. 3). The X pumping platform 22 carries the panel 4〇 for moving the 4〇 panel to the position of the other pattern to be scribed in the X-axis direction after the first conductive film 42 forms the curved pattern 48, so that the rest can be continued.曲赖程._Motor Μ is connected to #射ΜΜ and Y-axis motion platform continent, used to move the laser module along the (10) direction orthogonal to the axis direction and the ¥ axis direction. The beam 52 focuses the position of the spot, and the rib accurately adjusts the focus height of the third laser beam 52. A 5 M383897 Here, the first laser beam 50 produced by the laser source 12 is substantially a tunable wavelength of carbon dioxide laser, the wavelength of which is The range is 9.2um~10.6um, and the wavelength of the substrate 44 of the panel 40 can be selected to be good, so that the third laser beam is made. After processing the first conductive film 42 of the panel 4, it enters the substrate 44 of the panel 40 and is absorbed to avoid damage to the second conductive film 46. In addition, the power of the first laser beam 50 generated by the laser source 12 can be greater than 1500W, so it can meet the needs of mass production. The monitoring unit 14 includes a laser shutter 141, a first beam splitter 142, a spectrometer 143, a laser power attenuator 144, a second beam splitter 145, an optical power meter 146, and a first light piece. The path lighter H7, the beam shaper 148, the collimator beam expander 149, the second light tracker 15A, the third beam splitter ι51, the third light curve 152, and the beam profile analyzer 153. The laser shutter 141 receives The first laser beam 50' causes the first laser beam 50 to pass through the laser shutter 141 to the first beam splitter 142 when the power is turned on. The first beam splitter 142 splits the first laser beam 50 by a 90 degree angular offset. A reflected beam 53 and a first laterally offset beam 54 of the same direction as the original direction of travel. Spectrometer 143 receives the first laterally offset beam 54 and analyzes its spectrum, and laser power attenuator ι 44 receives the first reflected beam 53 and controls its power. After output to the second beam splitter 145, the second beam splitter 145 points The first reflected beam 53 is a second reflected beam 55 offset by a 90 degree angle and a second laterally offset beam 56 of the same direction as the original direction of travel. The optical power meter 146 receives the second reflected beam 55 and analyzes its power, the first light The tracker 147 receives the second laterally offset beam 56 and shifts it 9 degrees to the beam shaper 148'. The beam shaper 148 receives the second laterally offset beam 56 for Gaussian second offset beam 56. The energy distribution is converted to a flat top (t〇p_flat) energy distribution and output. The collimator beam expander 149 receives the second laterally offset beam 56 of the beam shaper 148 and calibrates its direction and diameter to output to the second. The optical path device 15〇, the sixth M383897 optical path device 150 shifts the first-lateral offset beam % to the third beam splitter (5), and the third beam splitter 151 splits the second laterally-shifted beam brother to a 90-degree angle. The second laser beam 51 is offset and a third laterally offset beam 57 is the same as the original direction of travel. The third optical path 152 receives the third laterally offset beam 57 and shifts it by 9 degrees to the beam corridor analyzer 153, and the beam profile analyzer 153 analyzes the shape of the third laterally offset beam 57, and Provides immediate upper and lower limits of optical parameters. As a quality control, when the optical parameters exceed the Fan Park, a warning is issued, 'The quality of the recorded light is 剌; ^ Control can be recorded and corrected for the parameters of the laser processing settings. Here, the monitoring unit 7C 14 is covered with a shielding cover 18 to prevent the laser or other radiation from being exposed to the human body. The beam moving material 16 & includes touch visual (6), sweeping mirror 162 and telecentric lens 163. The aligning visual mode, group 161 receives the second laser beam 51 output from the monitoring unit 14 for observing and assisting in locating the position of the output of the third laser beam 52. The snoring Mirror 162 is coupled to the aligning mode, group 161. 'For shifting the second laser beam 51, outputting the third laser beam 52' to cause the third laser light 52 to align the first __conductive film 42 in the z-axis direction, and the lens ι63 is connected to the sweeping mirror 162 'Use to view the third laser beam 52 and the panel 4〇 without distortion. The laser device proposed by the present invention further includes a host computer 6 and a display 62. The host 60 and the display 62 are coupled to the alignment vision module 161 for discriminating and displaying the image extracted by the alignment visual module 161. In summary, the present invention adjusts the wavelength of the carbon dioxide laser to a wavelength suitable for the glass or PET substrate 44 of the panel 4' g& M2, light shape, polarization, spot size, etc. The optical parameters, together with the appropriate focus height and energy, produce the plasma 7 M383897 removal capability to complete the curve process of the first conductive film 42, and can instantly monitor the optical parameters and quality without damaging the second conductive film 46, indeed It can replace the traditional wet process by making the curve to be etched on the panel with double-layer conductive film. Although the technical content of the present invention has been disclosed above in the preferred embodiment, it is not intended to limit the present creation, and any person skilled in the art can make some changes and refine the creation of Gai County without departing from the spirit of the creation. The scope of protection of this creation is subject to the definition of the scope of the patent application. [Simple description of the diagram] Figure 1 is a schematic diagram of the creation. Figure 2 is a block diagram of the laser module. Figure 3 is a schematic diagram of the panel scribe curve. [Description of Main Components] 10 · Laser Module 12: Laser Light Source 14: Monitoring Unit 148: Beam Shaper H9: Collimation Beam Expander 150: Second Light Curver 152: Third Light Curver 141 : Laser shutter 142 : First beam splitter 151 : Third beam splitter 143 : Spectrometer 153 : Beam profile analyzer 144 : Laser power attenuator 145 . Second beam splitter 146 : Optical power meter 147 : First light path 16: Beam moving unit 161: Alignment vision module 162: Scanning galvanometer 163: Telecentric lens M383897 18: Shadow shield 20: Y-axis motion platform 22: X-axis motion platform 30: Linear motor 40: Panel 42: First conductive film 44: substrate 46: second conductive film 48: curved pattern 50: first laser light east 51: second laser beam 52: third laser beam 53: first reflected beam 54: first laterally polarized Moving beam 55: second reflected beam 56: second laterally offset beam 57: third laterally offset beam 60 · host 62: display X: X-axis direction Y: Y-axis direction Z: Z-axis direction